CN111041424A - Film forming apparatus and method, and system and method for manufacturing organic EL panel - Google Patents

Film forming apparatus and method, and system and method for manufacturing organic EL panel Download PDF

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Publication number
CN111041424A
CN111041424A CN201910975564.XA CN201910975564A CN111041424A CN 111041424 A CN111041424 A CN 111041424A CN 201910975564 A CN201910975564 A CN 201910975564A CN 111041424 A CN111041424 A CN 111041424A
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substrate
vapor deposition
vapor
mask
film forming
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CN201910975564.XA
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CN111041424B (en
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高津和正
河野贵志
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Canon Tokki Corp
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Canon Tokki Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Manufacturing & Machinery (AREA)
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  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
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  • Environmental & Geological Engineering (AREA)
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Abstract

The present invention relates to a film forming apparatus, a manufacturing system and a film forming method for an organic EL panel, and a manufacturing method for an organic EL device. In the vapor deposition apparatus, if a plurality of vapor deposition stations are provided in one vacuum chamber in order to improve the utilization efficiency and productivity of the vapor deposition material, the volume of the vacuum chamber increases to ensure a working space for replacing the substrate, and the cost of the apparatus increases. During the period until the vapor deposition is completed on the non-vapor-deposited substrate arranged at the film forming position of the first vapor deposition table (28), the second mask supporting part (25) of the second vapor deposition table (32) is lowered to a position lower than that during the vapor deposition, the vapor-deposited substrate supported by the second substrate supporting part (24) is replaced by the non-vapor-deposited substrate by using a substrate conveying mechanism (33), then the second mask supporting part (25) is raised, the relative position of the second mask (9) and the non-vapor-deposited substrate is aligned, and the aligned non-vapor-deposited substrate is arranged at the film forming position of the second vapor deposition table (32).

Description

Film forming apparatus and method, and system and method for manufacturing organic EL panel
Technical Field
The present invention relates to a film forming apparatus and a film forming method. In particular, the present invention relates to a film forming apparatus and a film forming method capable of replacing a substrate on one deposition table while depositing the substrate on another deposition table in the same chamber.
Background
In recent years, organic EL elements which are self-luminous and excellent in viewing angle, contrast, and response speed have been widely used in various display devices including wall-mounted televisions.
Generally, an organic EL device is manufactured by a method of placing a substrate in a vacuum chamber and forming an organic film of a predetermined pattern on the substrate. More specifically, the organic material film is manufactured through a step of transferring a substrate into a film forming chamber maintained in vacuum, a step of aligning (aligning) the substrate and a mask with high accuracy, a step of forming an organic material film, a step of transferring the film-formed substrate from the film forming chamber, and the like.
In the process of forming a film of an organic material, the organic material is evaporated or sublimated to form a film, but in the case of a method of heating the organic material every time a substrate is provided, it is necessary to wait until the film forming rate is stabilized every heating, and the productivity of the manufacturing is limited.
Therefore, although a method of maintaining the vapor deposition source at a high temperature at all times to make the film formation rate of the organic material constant can be considered, the evaporation or sublimation of the organic material continues even while the substrate is being transported or aligned, and thus the loss of the organic material is increased. Therefore, attempts have been made to achieve both an improvement in the productivity of production and a reduction in the loss amount of organic materials.
For example, patent document 1 discloses a device including a vacuum chamber capable of accommodating a first substrate and a second substrate, and a vapor deposition source configured to be movable between a vapor deposition region of the first substrate and a vapor deposition region of the second substrate. The vapor deposition source of the device can move between the vapor deposition area of the first substrate and the vapor deposition area of the second substrate along the circular arc track. The conveyance and alignment of one substrate and the deposition of the other substrate can be performed simultaneously, thereby shortening the process time and improving the utilization efficiency of the material.
Patent document 2 discloses an apparatus in which a first vapor deposition stage and a second vapor deposition stage are disposed adjacent to each other in a vacuum chamber, and a vapor deposition source is reciprocated between the two vapor deposition stages to alternately form a film. In this apparatus, for example, when a film is formed on a substrate by one of the vapor deposition stations, a shutter is provided in each of the vapor deposition stations so that the organic material does not enter the adjacent other vapor deposition station. The substrate can be transported and aligned on one of the vapor deposition stages, and the substrate can be vapor deposited on the other vapor deposition stage, thereby reducing the process time and improving the utilization efficiency of the material.
Prior art documents
Patent document
Patent document 1: japanese patent laid-open publication No. 2011-68980
Patent document 2: japanese laid-open patent publication No. 2016-196684
In the apparatuses described in patent documents 1 and 2, a vapor deposition source is disposed in a horizontally movable manner in a bottom portion in a vacuum chamber, and an organic material is evaporated vertically upward. Each vapor deposition station is provided with a mask holding mechanism, a substrate conveying mechanism, and an alignment adjustment mechanism for adjusting alignment of the two mechanisms, which are arranged in this order from below.
For example, when a substrate after film formation is sent out from the film forming chamber, the substrate holding mechanism is lifted to separate the substrate from the mask, and thereafter the substrate is conveyed out of the film forming chamber. When the substrate before film formation is set on the deposition table, the substrate fed into the film formation chamber is moved to above the deposition table and held by the substrate holding mechanism, and alignment adjustment is performed while the substrate holding mechanism is moved downward to bring the substrate close to the mask.
In the film forming apparatuses disclosed in patent documents 1 and 2, although the process time is shortened and the material utilization efficiency is improved, the film forming apparatuses tend to be large in size.
In the film forming chamber, a vapor deposition source, a mask, and a substrate are arranged in this order from below. When the substrate is replaced, the substrate transfer mechanism is operated above the mask fixed at a predetermined height to carry in and out the substrate. In this case, in order to prevent the substrate transfer mechanism from interfering with the mask and the mask holding mechanism, a large work space in which the substrate transfer mechanism can operate needs to be secured above the mask. Therefore, the height and the volume of the film forming chamber (vacuum chamber) increase, the manufacturing cost and the transportation cost of the film forming apparatus increase, and the height and the ground load of the building in which the film forming apparatus is installed also increase. This increases the total cost of the manufacturing apparatus of the organic EL element.
Disclosure of Invention
The film forming apparatus of the present invention includes: a film forming chamber capable of reducing pressure, a first vapor deposition stage, a second vapor deposition stage, a vapor deposition source capable of moving to the first vapor deposition stage or the second vapor deposition stage in the film forming chamber, and a control section, wherein the first vapor deposition stage includes: a first mask supporting part which supports the first mask and can move up and down, and a first substrate supporting part which can support the substrate, wherein the second evaporation platform comprises: a second mask supporting part which supports a second mask and can move up and down, and a second substrate supporting part which can support a substrate, wherein the control part executes a first process, a second process, a third process and a fourth process, the first process is that the vapor deposition source is used for vapor deposition of a non-vapor-deposited substrate arranged at a film forming position of the first vapor deposition stage, the second mask supporting part of the second vapor deposition stage is lowered to a position lower than that during vapor deposition until the vapor deposition is completed, the vapor-deposited substrate supported by the second substrate supporting part is replaced by the non-vapor-deposited substrate by using a substrate conveying mechanism, and then the second mask supporting part is raised to align the relative positions of the second mask and the non-vapor-deposited substrate, and the aligned non-vapor-deposited substrate is arranged at a film forming position of the second vapor deposition stage, after the first process, in the second process, the vapor deposition source is moved from the first vapor deposition stage to the second vapor deposition stage, and after the second process, in the third process, the vapor deposition source is caused to perform vapor deposition on the non-vapor-deposited substrate disposed at the film formation position of the second vapor deposition stage, and until the vapor deposition is completed, the first mask support portion of the first vapor deposition stage is moved to a position lower than that during the vapor deposition, the vapor-deposited substrate supported by the first substrate support portion is replaced with a non-vapor-deposited substrate using a substrate transport mechanism, and thereafter the first mask support portion is raised to align the relative positions of the first mask and the non-vapor-deposited substrate, and the aligned non-vapor-deposited substrate is disposed at the film formation position of the first vapor deposition stage, and after the third process, in the fourth process, the vapor deposition source is moved from the second vapor deposition stage to the first vapor deposition stage.
In addition, a film forming method of the present invention uses a film forming apparatus including: a film forming chamber capable of reducing pressure, a first vapor deposition stage, a second vapor deposition stage, and a vapor deposition source capable of moving to the first vapor deposition stage or the second vapor deposition stage in the film forming chamber, the first vapor deposition stage comprising: a first mask supporting part which supports the first mask and can move up and down, and a first substrate supporting part which can support the substrate, wherein the second evaporation platform comprises: a second mask supporting portion which supports a second mask so as to be movable up and down, and a second substrate supporting portion which supports a substrate, the film forming method comprising: a first step of lowering the second mask support portion of the second vapor deposition stage to a position lower than that during vapor deposition until the vapor deposition source completes vapor deposition on a non-vapor-deposited substrate placed at a film formation position of the first vapor deposition stage, replacing the vapor-deposited substrate supported by the second substrate support portion with a non-vapor-deposited substrate using a substrate transport mechanism, and thereafter raising the second mask support portion to align the relative positions of the second mask and the non-vapor-deposited substrate, and placing the aligned non-vapor-deposited substrate at a film formation position of the second vapor deposition stage; a second step of moving the vapor deposition source from the first vapor deposition stage to the second vapor deposition stage; a third step of lowering the first mask support portion of the first vapor deposition stage to a position lower than that during vapor deposition until the vapor deposition source completes vapor deposition on the non-vapor-deposited substrate placed at the film formation position of the second vapor deposition stage, replacing the vapor-deposited substrate supported by the first substrate support portion with a non-vapor-deposited substrate using a substrate transport mechanism, and thereafter raising the first mask support portion to align the relative positions of the first mask and the non-vapor-deposited substrate, and placing the aligned non-vapor-deposited substrate at the film formation position of the first vapor deposition stage; and a fourth step of moving the vapor deposition source from the second vapor deposition stage to the first vapor deposition stage.
Effects of the invention
According to the present invention, since the efficiency of use of the vapor deposition material and the productivity of film formation are high, and the volume of the vacuum chamber is compact, a film forming apparatus and a film forming method can be provided which are inexpensive.
Drawings
Fig. 1 is a schematic plan view of a film formation system according to an embodiment.
Fig. 2 is a schematic cross-sectional view showing the overall configuration of the film deposition apparatus according to the embodiment.
Fig. 3 is a schematic cross-sectional view showing the overall configuration of the film deposition apparatus according to the embodiment.
Fig. 4 is an enlarged schematic cross-sectional view of a part of the mask supporting portion and the mask driving member.
Fig. 5 is a timing chart showing operations of the respective portions of the film deposition apparatus according to the embodiment.
Fig. 6 is a schematic cross-sectional view showing a vapor deposition stage when carrying out the carrying-out or carrying-in of the substrate.
Fig. 7 is a schematic cross-sectional view showing the vapor deposition stage when the substrate is fed and fixed to the substrate support portion.
Fig. 8 is a schematic cross-sectional view showing a vapor deposition stage when a substrate is set at a film formation position.
Fig. 9 is a control block diagram of the film deposition apparatus according to the embodiment.
Fig. 10 is an explanatory diagram of an organic EL panel manufacturing system according to the embodiment.
Description of the reference numerals
1 a vacuum chamber, 2 a vapor deposition source device,
a 3X-axis sliding mechanism, a 4Y-axis sliding mechanism,
5 a first pressing plate, 6 a first substrate,
7 a first mask, 8 a second substrate,
9 a second mask, 10 a one-dot chain line indicating the height of a mask support part at the time of film formation,
11 a first mask driving means, 12 a first substrate driving means,
13 second mask driving means, 14 second substrate driving means,
the synchronous belt 15, the belt wheel 16,
17, a driving motor, 18 a ball screw,
19 a metal bellows, 20 a first mask support,
21, a substrate clamping member, 22 a first alignment mechanism,
23 a first alignment camera, 24 a second substrate support,
25 second mask support, 26 first substrate support,
27 a second pressing plate, 28 a first vapor deposition stage,
29 substrate clamping, 30 second alignment camera,
31 a second alignment mechanism, 32 a second evaporation stage,
33 a substrate holding hand, 34 a gate valve,
35 conveying chamber, 36 is a single-dot chain line indicating the height of the highest portion of the vapor deposition source device 2,
50, a control section, 51, an external computer,
100. 101, 102, 103 a transport path,
104 movable arm, 300 manufacturing system for manufacturing organic EL panel,
1101. 1102, 1103 conveyance chamber, 1105 substrate supply chamber,
1106 mask reserve chamber, 1107 hand-off chamber,
1108 a glass supply chamber, 1109 a pasting chamber,
1110 extraction chamber, 1120 robot.
Detailed Description
A film deposition apparatus and a film deposition method according to an embodiment of the present invention will be described with reference to the drawings. In the drawings referred to in the following description, the same components are denoted by the same reference numerals unless otherwise specified.
(film Forming System)
Fig. 1 is a schematic plan view of a film formation system including a film formation device according to an embodiment. In the film formation system of fig. 1, the film formation apparatus 100, the film formation apparatus 101, the film formation apparatus 102, the transport chamber 35, and the transport path 103 are connected to each other via the gate valve 34, and the inside of the film formation system is maintained at a predetermined vacuum degree. The film deposition apparatus 100, the film deposition apparatus 101, and the film deposition apparatus 102 are film deposition apparatuses that deposit an organic material on a substrate, and the basic configurations of the apparatuses are the same. The film formation system may be configured such that each film formation device forms a film of the same type of organic material, or may be configured such that each film formation device forms a film of a different type of organic material. Each of the film forming apparatuses includes two vapor deposition stations, and the configuration and operation of the film forming apparatus will be described in detail below with reference to the film forming apparatus 100 as an example.
The transfer chamber 35 includes a transfer robot, and can transfer substrates to and from the respective film forming apparatuses or the transfer paths 103. The transport robot includes a movable arm 104 and a substrate holding hand 33, and can carry in and out a substrate to and from each deposition station of each film deposition apparatus. The movable arm 104 and the substrate holding hand 33 may be any type of mechanism as long as the substrate can be stably processed in the vacuum apparatus. Fig. 1 schematically illustrates a state in which the gate valve 34 connecting the second vapor deposition stage 32 of the film formation apparatus 100 and the transfer chamber 35 is opened and the transfer robot performs processing on the substrate 8.
The transport path 103 is a transport path for transporting a substrate to a load lock chamber in which the substrate can be taken out of or put into the atmosphere, and for transporting the substrate to another film formation system. In fig. 1, the film deposition apparatus and the transport path are arranged in 4 directions of the upper, lower, left, and right of the transport chamber 35, but the form of the film deposition system is not necessarily limited to this example in carrying out the present invention, and for example, the film deposition apparatus and the transport path may be arranged in 6 directions or 8 directions around the transport chamber. The transfer robot as the substrate transfer mechanism is not limited to a single arm, and may be a multi-arm robot.
(Structure of film Forming apparatus)
Next, the structure of the film deposition apparatus according to the embodiment will be described by taking the film deposition apparatus 100 as an example. Fig. 2 and 3 are schematic cross-sectional views showing the overall configuration of the film formation apparatus 100, and each of the views shows a different operating state of the film formation apparatus 100.
The film forming apparatus 100 includes a vacuum chamber 1 as an outer enclosure of a film forming chamber, and the inside of the vacuum chamber 1 can be reduced to, for example, 10 degrees by a vacuum pump not shown-3A pressure region below Pa.
A vapor deposition source device 2 is disposed in the vacuum chamber 1, an organic material as a film forming material is stored in the vapor deposition source device 2, and the organic material is heated by a controlled heater and evaporated or sublimated at a predetermined rate. The vapor deposition source device 2 includes: an opening for discharging the vaporized organic material toward the substrate, and a shutter for shielding the opening as needed.
The vapor deposition source device 2 can be moved in the X direction and the Y direction by the X-axis slide mechanism 3 and the Y-axis slide mechanism 4. In fig. 2 and 3, the first vapor deposition stage 28 is provided on the left side, and the second vapor deposition stage 32 is provided on the right side, but the vapor deposition source device 2 may be moved to any vapor deposition stage side by the X-axis slide mechanism 3. Fig. 2 shows a state in which the vapor deposition source device 2 is positioned on the first vapor deposition stage 28 side, and fig. 3 shows a state in which the vapor deposition source device 2 is positioned on the second vapor deposition stage 32 side.
The vapor deposition source device 2 can perform linear reciprocating scanning in a direction perpendicular to the paper surface of the figure by the Y-axis slide mechanism 4, and can form a film having high uniformity on the substrate in the Y direction on each vapor deposition stage.
A first mask 7, a first substrate 6, and a first pressing plate 5 serving also as a magnet plate are arranged in this order from below on the first vapor deposition stage 28 side in the vacuum chamber 1. The first mask 7 is supported from both sides by a pair of first mask supporting portions 20. The first substrate 6 is supported from both sides by the pair of first substrate supporting portions 26 when aligned with the first mask 7, and the substrate clamp 21 can fix the first substrate 6 to the first substrate supporting portions 26.
A first mask driving member 11, a first substrate driving member 12, a first alignment mechanism 22, and a first alignment camera 23 are provided on the vacuum chamber 1 on the first vapor deposition stage 28 side. The first mask driving member 11 can adjust the vertical position of the first mask supporting part 20 in the vacuum chamber 1. The first substrate driving means 12 can adjust the vertical position of the first substrate support portion 26 in the vacuum chamber 1. The first alignment camera 23 may photograph the alignment marks of the first substrate 6 and the first mask 7. The first alignment mechanism 22 can move the first substrate support portion 26 in the X-axis direction, the Y-axis direction, and θ rotation.
The same structure as that of the first vapor deposition stage 28 may be provided on the second vapor deposition stage 32 side. That is, the second mask 9, the second substrate 8, and the second pressing plate 27 serving also as a magnet plate are arranged in this order from below on the second vapor deposition stage 32 side in the vacuum chamber 1. The second mask 9 is supported from both sides by a pair of second mask supporting portions 25. The second substrate 8 is supported from both sides by the pair of second substrate supporting portions 24 when aligned with the second mask 9, and the substrate clamp 29 can fix the second substrate 8 to the second substrate supporting portions 24.
A second mask driving member 13, a second substrate driving member 14, a second alignment mechanism 31, and a second alignment camera 30 are provided on the vacuum chamber 1 on the second vapor deposition stage 32 side. The second mask driving member 13 can adjust the vertical position of the second mask supporting portion 25 in the vacuum chamber 1. The second substrate driving means 14 can adjust the vertical position of the second substrate support portion 24 in the vacuum chamber 1. The second alignment camera 30 may photograph the alignment marks of the second substrate 8 and the second mask 9. The second alignment mechanism 31 can move the second substrate support portion 24 in the X-axis direction, the Y-axis direction, and θ rotation.
Next, specific configurations of the mask driving member and the substrate driving member provided in each vapor deposition stage will be described in more detail. The mask driving member and the substrate driving member are mechanisms capable of moving up and down the mask supporting portion and the substrate supporting portion in the vacuum chamber 1, respectively, and the basic operation principle is the same. Therefore, the first mask driving means 11 will be described as an example.
Fig. 4 is an enlarged schematic cross-sectional view of a part of the first mask supporting part 20 and the first mask driving member 11, and as shown in the figure, the shaft of the first mask supporting part 20 is communicated with the atmosphere side so as to be movable up and down in a state where airtightness is ensured via the metal bellows 19. The first mask support unit 20 is configured to be movable up and down by converting rotation of the drive motor 17 transmitted via the pulley 16 and the timing belt 15 into linear motion using the ball screw 18. The first vapor deposition stage 28 can perform the lifting operation while maintaining the posture of the first mask 7 by performing 2-axis synchronization control on the pair of first mask support portions 20 capable of supporting the mask.
Similarly, the shaft of the first substrate support portion 26 communicates with the atmosphere side with airtightness secured via a metal bellows, and can move up and down by converting the rotation of the drive motor transmitted via the pulley and the timing belt into linear motion by the ball screw. The first vapor deposition stage 28 can perform the lifting operation while maintaining the posture of the first substrate 6 by performing 2-axis synchronization control on the pair of first substrate support portions 26 capable of supporting the substrate.
The second mask driving member 13 and the second substrate driving member 14 on the second vapor deposition stage 32 side also have the same mechanism.
(operation of film Forming apparatus)
Next, the operation of the film deposition apparatus according to the embodiment will be described by taking the film deposition apparatus 100 as an example. In the film forming apparatus according to the embodiment, while vapor deposition is performed on one vapor deposition stage, the mask is moved downward on the other vapor deposition stage, and the substrate is replaced after a space for processing the substrate is formed.
Fig. 5 is a timing chart showing transition of each operation state of the first vapor deposition stage, the second vapor deposition stage, and the vapor deposition source device for one cycle of the operation of the film formation apparatus 100.
First, in the period T1, the control unit controls each unit to execute the first process, and performs the following first step. That is, the first substrate 6 is vapor-deposited on the first vapor deposition stage 28 side of the film formation device 100. The vapor deposition source device 2 is moved to the first vapor deposition stage 28 side in advance before the period T1, and when vapor deposition is started by opening the shutter, vapor deposition is performed with high uniformity over the entire vapor deposition region of the substrate 6 while reciprocating scanning in the Y direction by the Y-axis slide mechanism 4. After the deposition of a predetermined film thickness, the shutter is closed to terminate the deposition.
On the other hand, in the period T1, the second vapor deposition station 32 sends out the vapor deposited substrate, and then sends in the vapor deposited substrate to align the substrate with the second mask 9 in the relative position, and the aligned substrate and mask are set at the film formation position. Fig. 2 shows the arrangement of the respective portions of the film formation apparatus 100 in the period T1.
Next, in the period T2, the control unit controls each unit to execute the second process, and performs the following second step. That is, the vapor deposition source device 2 with the shutter closed is moved from the first vapor deposition stage 28 side to the second vapor deposition stage 32 side by the X-axis sliding mechanism 3.
Next, in the period T3, the control unit controls each unit to execute the third process, and performs the following third step. That is, the second substrate 8 that was sent to the second vapor deposition station 32 and set at the film formation position during the period T1 is vapor deposited. When the shutter is opened and vapor deposition is started, the vapor deposition source device 2 performs vapor deposition with high uniformity over the entire vapor deposition region of the second substrate 8 while reciprocating scanning in the Y direction by the Y-axis slide mechanism 4. After the deposition of a predetermined film thickness, the shutter is closed to terminate the deposition.
In the period T3, on the other hand, in the first vapor deposition station 28, the substrate on which vapor deposition has been completed in the period T1 is sent out, the substrate on which vapor deposition has been performed next is sent in, the relative positions of the substrate and the first mask 7 are aligned, and the aligned substrate and mask are set at the film formation position. Fig. 3 shows the arrangement of the respective portions of the film formation apparatus 100 in the period T3.
Next, in the period T4, the control unit controls each unit to execute the fourth process, and performs the following fourth step. That is, the vapor deposition source device 2 with the shutter closed is moved from the second vapor deposition stage 32 side to the first vapor deposition stage 28 side by the X-axis sliding mechanism 3.
By repeating and continuing the operations from the period T1 to the period T4 described above, the film deposition apparatus 100 can improve the efficiency of use of the vapor deposition material and perform vapor deposition on a plurality of substrates with high productivity.
Next, a step of feeding the substrate subjected to vapor deposition from the vapor deposition station to the vapor deposition station and feeding the substrate subjected to vapor deposition to be set at the film formation position will be described in detail.
Here, the operation of the first vapor deposition stage 28 side in the period T3 will be described with reference to fig. 3 and 6 to 8, but the same procedure is applied to the operation of the second vapor deposition stage 32 side in the period T1. In each drawing, a dashed line 10 indicates the height of the mask support portion at the time of film formation, and a dashed line 36 indicates the height of the highest portion of the vapor deposition source device 2.
At the start of the period T3, the substrate on which vapor deposition has been completed in the period T1 is held in the state of being set at the film formation position in the first vapor deposition stage 28. That is, as shown in fig. 8, the first mask supporting portion 20 is at the level of the one-dot chain line 10, which is the height at the time of film formation, and supports the vapor deposited substrate and the first mask 7. The first pressing plate 5 serving also as a magnet plate is brought into close contact with the upper surface of the substrate on which vapor deposition has been performed, and the first mask 7 is attracted to the lower surface of the substrate. At this stage, the vapor deposited substrate is supported by the first mask supporting portion 20 and is separated from the first substrate supporting portion 26, and the substrate clamp 21 is opened.
The following operations are performed to feed out the vapor-deposited substrate from the first vapor deposition station 28 using the substrate holding hand 33 of the transport robot.
First, the first pressing plate 5 is lifted to be separated from the upper surface of the substrate on which vapor deposition has been performed, and the first mask 7 is released from the attraction by the magnet. Next, the first substrate driving means 12 is driven to raise the first substrate supporting portion 26, and moves to a position slightly higher (for example, 10mm) than the one-dot chain line 10 while supporting the vapor-deposited substrate. The first mask driving means 11 is driven to lower the first mask supporting portion 20, and the first mask supporting portion 20 is moved to a position lower than the alternate long and short dashed line 36 in a state where the first mask 7 is supported. Since the vapor deposition source device 2 moves toward the second vapor deposition stage 32 during the period T2, the first mask support portion 20 does not interfere with the vapor deposition source device 2 even if it is lowered to a position lower than the one-dot chain line 36. In some cases, a position sensor may be provided in the vapor deposition source device 2 to confirm that the vapor deposition source device 2 has moved toward the second vapor deposition stage 32 before the first mask support unit 20 is lowered.
In the present embodiment, the mask support portion is lowered to a height lower than the highest position of the vapor deposition source device, whereby the movement space of the transport robot can be formed between the substrate support portion and the mask. In order to transfer the substrate between the substrate support unit and the transfer robot, a large work space for operating the transfer robot is required between the substrate support unit and the mask. In the conventional film deposition apparatus, since the mask is fixed at the same height as that at the time of vapor deposition when the substrate is conveyed, it is necessary to secure a wide space between the one-dot chain line 10 and the ceiling portion of the vacuum chamber in order to secure an operation space of the conveying robot. Further, although the movement space of the transfer robot is secured by moving the substrate support portion in a large direction (for example, 150mm) toward the ceiling of the vacuum chamber, the height of the vacuum chamber increases, and therefore the apparatus becomes large in size and the total cost of the manufacturing equipment increases.
In the present embodiment, when the substrate is sent out, the mask support portion is lowered, and the substrate support portion is moved to a position slightly higher than the one-dot chain line 10, whereby an operation space of the transfer robot can be formed between the substrate support portion and the mask. Therefore, in the present embodiment, it is not necessary to secure a wide space between the dashed-dotted line 10 and the ceiling portion of the vacuum chamber, and therefore, as shown in fig. 2 and 3, the chamber height HC of the vacuum chamber can be reduced, and the size and weight of the film deposition apparatus can be reduced. That is, the total cost of the manufacturing apparatus can be suppressed.
When the vapor-deposited substrate is sent out, as shown in fig. 3 and 6, the vapor-deposited substrate 6 is held by being held by the substrate holding hand 33 of the transport robot and sent out to the transport chamber 35 through the gate valve 34.
When the conveyance of the evaporated substrate is completed, a conveyance robot is used to convey an unvaporized substrate to be evaporated next to the first evaporation stage 28. The height of each part is the same as that when the evaporated substrate is sent out. Therefore, the substrate 6 shown in fig. 6 can be said to be a substrate that has been deposited when it is sent out, and a substrate that has not been deposited when it is sent in. When a substrate that has not been deposited is placed on the first substrate support 26, the substrate holding hand 33 of the transport robot is retracted into the transport chamber 35, and the gate valve 34 is closed.
Thereafter, as shown in fig. 7, the non-vapor-deposited first substrate 6 placed on the first substrate support portion 26 is fixed by the substrate clamp 21.
Next, the first mask driving member 11 is driven to raise the first mask supporting portion 20 and to be stationary at the position of the one-dot chain line 10 which is the height at the time of vapor deposition. The first substrate support portion 26 is located at a position higher than the one-dot chain line 10, but the first substrate support portion 26 is lowered by driving the first substrate driving member 12 so that the first substrate approaches the first mask 7 to a position where the alignment marks of the first substrate 6 and the first mask 7 can be simultaneously imaged by the first alignment camera 23. Then, in order to align the first substrate 6 and the first mask 7, the first alignment camera 23 images the alignment marks of the first substrate 6 and the first mask 7, and the control unit calculates an alignment correction amount based on the imaging data.
Next, in this case, the first substrate driving means 12 is temporarily driven to raise the first substrate support portion 26 with respect to the first substrate. Next, the control unit drives the first alignment mechanism 22 that can perform X-axis direction movement, Y-axis direction movement, and θ rotation based on the calculation result, and moves the first substrate 6 to the alignment target position.
After the first substrate 6 is moved to the alignment target position, the first substrate driving means 12 is driven again to lower the first substrate support portion 26 with respect to the first substrate 6, and is stopped at the position of the one-dot chain line 10 which is the height at the time of vapor deposition. Next, when the first pressing plate 5 serving also as a magnet plate located above is lowered, the first mask 7 serving as a magnetic body is attracted by the magnetic force of the magnet and brought into close contact with the lower surface of the first substrate 6. After the first substrate 6 and the first mask 7 are brought into close contact with each other, the substrate clamp 21 is released.
Next, the first substrate support portion 26 is slightly lowered, whereby the first substrate 6 is mounted on the first mask support portion 20 in a state of being in close contact with the first mask 7. That is, the film is set at the film forming position shown in fig. 8.
The operation up to this point is completed during a period T3 shown in fig. 5, that is, during a period from when the film formation on the substrate by the second vapor deposition stage 32 side is completed.
(control System)
Next, the configuration of the control system of the film formation apparatus 100 according to the embodiment will be described with reference to the control block diagram of fig. 9. The control system of the film formation apparatus 100 may constitute a part of a control system that controls the entire film formation system shown in fig. 1. For convenience of illustration, fig. 9 shows only some of the elements connected to the control unit.
The control unit 50 is a computer for controlling the operation of the film formation apparatus 100, and includes a CPU, a ROM, a RAM, an I/O port, and the like therein. The ROM stores an operation program related to the basic operation of the film forming apparatus 100.
Programs for executing various processes related to the film formation method of the present embodiment may be stored in the ROM, as in the basic operation program, or may be loaded from the outside into the RAM via a network. Alternatively, the RAM may be loaded with the program via a computer-readable recording medium.
The I/O port is connected to an external device or a network, and can input and output data necessary for vapor deposition, for example, between the I/O port and an external computer 51. The I/O port is connected to a monitor and an input device, not shown, and can display information on the operating state of the film deposition apparatus to an operator or receive an input of a command from the operator.
The control unit 50 is connected to the first mask driving member 11, the first substrate driving member 12, the first alignment mechanism 22, and the substrate clamping member 21, and controls the operation of each part of the first vapor deposition stage 28. The control unit 50 is connected to the second mask driving member 13, the second substrate driving member 14, the second alignment mechanism 31, and the substrate clamp 29, and controls the operation of each part of the second vapor deposition stage 32.
The control unit 50 is connected to the X-axis sliding mechanism 3 and the Y-axis sliding mechanism 4, and controls the position of the vapor deposition source device 2. The control section 50 is connected to the vapor deposition source device 2, and controls the operation of the heater and the shutter of the vapor deposition source device 2.
The control unit 50 is connected to sensors such as the first alignment camera 23, the second alignment camera 30, a position sensor of the vapor deposition source device, and a position sensor of the mask support unit, and obtains information necessary for controlling each unit.
The control unit 50 is connected to a control unit of the transfer robot and a control unit of the gate valve 34, and performs synchronous adjustment of operation timing in cooperation with the control unit when the substrate is carried out. The controller 50 may directly control the operation of the transport robot or the gate valve 34 depending on the situation.
The control section 50 controls the operations of the above-described respective sections to perform processes of the entire film forming process including the feeding of the substrate, the vapor deposition, and the feeding of the substrate at each vapor deposition station.
As described above, in the film forming apparatus and the film forming method according to the present embodiment, if vapor deposition is completed on one vapor deposition stage, the vapor deposition source apparatus is moved to the other vapor deposition stage to start vapor deposition. Then, until the vapor deposition on the other vapor deposition stage is completed, the mask support portion is moved downward on the one vapor deposition stage to carry out the feeding of the vapor deposited substrate and the feeding of the non-vapor deposited substrate, and the substrates are aligned with the mask and set at the film formation position. Then, if the vapor deposition is completed on the other vapor deposition stage, the vapor deposition source device is moved to the one vapor deposition stage to start the vapor deposition. Then, until the vapor deposition on one vapor deposition stage is completed, the mask support portion is moved downward on the other vapor deposition stage to carry out the feeding of the vapor deposited substrate and the feeding of the non-vapor deposited substrate, and thereafter the mask is raised to the alignment position to complete the alignment between the mask and the substrate and set at the film formation position. By repeating the above operations, new substrates alternately fed to two deposition stages in the same vacuum chamber can be continuously deposited. That is, by simultaneously performing film formation and substrate replacement in parallel in the same vacuum chamber, the efficiency of use of the vapor deposition material can be improved in the production of the organic EL element, and the productivity of film formation can be increased.
In this embodiment, since the mask support portion is lowered to a position lower than the vapor deposition position or the alignment position when the substrate is carried out or carried in, an operation space of the transport robot can be formed between the substrate support portion and the mask by moving the substrate support portion to a position slightly higher than the film formation position. In the present embodiment, since it is not necessary to secure a wide space between the film formation position and the top of the vacuum chamber, the height of the vacuum chamber can be reduced, and the size and weight of the film formation apparatus can be reduced. Therefore, the total cost of the manufacturing apparatus of the organic EL element can be suppressed.
[ other embodiments ]
The present invention is not limited to the above-described embodiments, and various modifications can be made within the technical spirit of the present invention.
For example, when the substrate is replaced, the mask support portion is preferably lowered to a height lower than the height of the highest portion of the vapor deposition source device, but when the movement space of the transport robot can be secured by lowering the mask support portion to a position higher than the highest portion of the vapor deposition source device, the mask support portion may be moved to the position. In short, by lowering the mask support portion when the substrate is replaced, the operation space of the transfer robot can be formed between the substrate support portion and the mask, and the height of the vacuum chamber can be suppressed.
The present invention can be implemented as long as one film forming apparatus is provided with a plurality of vapor deposition stations, and for example, one film forming apparatus may be provided with 3 or more vapor deposition stations.
Fig. 10 is an explanatory diagram of a manufacturing system 300 for manufacturing an organic EL panel, which implements the present invention. The manufacturing system 300 includes a plurality of film formation apparatuses 100, a conveyance chamber 1101, a conveyance chamber 1102, a conveyance chamber 1103, a substrate supply chamber 1105, a mask stock chamber 1106, a delivery chamber 1107, a glass supply chamber 1108, a bonding chamber 1109, a take-out chamber 1110, and the like. Although there are different portions in the respective film forming apparatuses 100 in terms of fineness such as a difference in film forming materials and a difference in masks, the basic configuration (particularly, the configuration related to the conveyance and alignment of the substrate) is substantially the same. As described above, each film forming apparatus 100 moves the mask support portion to a position below the vapor deposition position and the alignment position in the other vapor deposition stage until the vapor deposition on one vapor deposition stage is completed, carries out the feeding of the vapor deposited substrate and the feeding of the non-vapor deposited substrate, and thereafter raises the mask to complete the alignment between the substrate and the mask and sets the substrate at the film forming position.
A robot 1120 as a conveyance mechanism is disposed in the conveyance chamber 1101, the conveyance chamber 1102, and the conveyance chamber 1103. The transfer of the substrate between the chambers is performed by the robot 1120. The plurality of film deposition apparatuses 100 included in the manufacturing system 300 may be apparatuses that deposit the same material or different materials. For example, the manufacturing system may be one in which the film forming apparatuses deposit organic materials of different emission colors. In the manufacturing system 300, an organic material is deposited on the substrate conveyed by the robot 1120, or a thin film of an inorganic material such as a metal material is formed by, for example, deposition.
The substrate is supplied to the substrate supply chamber 1105 from the outside. The mask on which the film is deposited and used in each film forming apparatus 100 is transported to the mask stocker 1106 by the robot 1120. By recovering the mask transferred to the mask stock chamber 1106, the mask can be cleaned. The cleaned mask may be stored in the mask storage chamber 1106 and set in the film deposition apparatus 100 by the robot 1120.
The glass supply chamber 1108 is supplied with a sealing glass material from the outside. In the bonding chamber 1109, a glass material for sealing is bonded to the substrate after film formation, thereby manufacturing an organic EL panel. The manufactured organic EL panel is taken out from the take-out chamber 1110.
As described above, the present invention can be suitably carried out when forming an organic film constituting an organic EL device, but can be applied to other film forming processes.

Claims (11)

1. A film forming apparatus includes: a film forming chamber capable of reducing pressure, a first vapor deposition stage, a second vapor deposition stage, a vapor deposition source capable of moving to the first vapor deposition stage or the second vapor deposition stage in the film forming chamber, and a control section,
the first vapor deposition stage includes: a first mask supporting part for supporting the first mask and capable of moving up and down, and a first substrate supporting part for supporting the substrate,
the second vapor deposition stage includes: a second mask supporting part for supporting the second mask and capable of moving up and down, and a second substrate supporting part for supporting the substrate,
the control unit executes a first process, a second process, a third process, and a fourth process,
in the first process, the vapor deposition source is caused to perform vapor deposition on a non-vapor-deposited substrate provided at a film formation position of the first vapor deposition stage, the second mask support portion of the second vapor deposition stage is caused to descend to a position lower than that during vapor deposition until completion of the vapor deposition, the vapor-deposited substrate supported by the second substrate support portion is replaced with a non-vapor-deposited substrate by using a substrate transport mechanism, the second mask support portion is then caused to ascend, the relative positions of the second mask and the non-vapor-deposited substrate are aligned, and the aligned non-vapor-deposited substrate is provided at a film formation position of the second vapor deposition stage,
moving the vapor deposition source from the first vapor deposition stage to the second vapor deposition stage in the second process after the first process,
after the second process, in the third process, the vapor deposition source is caused to perform vapor deposition on the non-vapor-deposited substrate disposed at the film formation position of the second vapor deposition stage, the first mask support portion of the first vapor deposition stage is moved to a position lower than that during vapor deposition until the completion of the vapor deposition, the vapor-deposited substrate supported by the first substrate support portion is replaced with a non-vapor-deposited substrate by using a substrate conveyance mechanism, and thereafter the first mask support portion is raised to align the relative positions of the first mask and the non-vapor-deposited substrate, and the aligned non-vapor-deposited substrate is disposed at the film formation position of the first vapor deposition stage,
after the third process, the vapor deposition source is moved from the second vapor deposition stage to the first vapor deposition stage in the fourth process.
2. The film forming apparatus according to claim 1,
in the first process, the control unit lowers the second mask supporting unit to a height lower than a height of a highest portion of the vapor deposition source,
in the third process, the control unit may lower the first mask supporting unit to a height lower than a height of a highest portion of the vapor deposition source.
3. The film forming apparatus according to claim 1 or 2,
the control unit, in the first process, after the substrate transport mechanism is used to send out the vapor-deposited substrate supported by the second substrate support unit from the film forming chamber, uses the substrate transport mechanism to send a non-vapor-deposited substrate into the film forming chamber and support the non-vapor-deposited substrate by the second substrate support unit,
in the third process, after the vapor-deposited substrate supported by the first substrate support unit is sent out from the film forming chamber by the substrate transport mechanism, the control unit sends a non-vapor-deposited substrate into the film forming chamber by the substrate transport mechanism and supports the non-vapor-deposited substrate by the first substrate support unit.
4. The film forming apparatus according to claim 1 or 2,
the control unit repeatedly executes the first to fourth processes.
5. A manufacturing system, characterized in that,
a film forming apparatus comprising a plurality of film forming apparatuses according to claim 1 or 2.
6. A system for manufacturing an organic EL panel,
the film forming apparatus according to claim 1 or 2, wherein the vapor deposition source of at least one of the film forming apparatuses is a vapor deposition source of an organic material.
7. A film forming method uses a film forming apparatus, the film forming apparatus including: a film forming chamber capable of reducing pressure, a first evaporation stage, a second evaporation stage, and an evaporation source capable of moving to the first evaporation stage or the second evaporation stage in the film forming chamber,
the first evaporation stage includes: a first mask supporting part which supports the first mask and can move up and down, and a first substrate supporting part which can support the substrate, wherein the second evaporation platform comprises: a second mask supporting part for supporting the second mask and capable of moving up and down, and a second substrate supporting part for supporting the substrate,
the film forming method is characterized by comprising the following steps:
a first step of lowering the second mask support portion of the second vapor deposition stage to a position lower than that during vapor deposition until the vapor deposition source completes vapor deposition on a non-vapor-deposited substrate placed at a film formation position of the first vapor deposition stage, replacing the vapor-deposited substrate supported by the second substrate support portion with a non-vapor-deposited substrate using a substrate transport mechanism, and thereafter raising the second mask support portion to align the relative positions of the second mask and the non-vapor-deposited substrate, and placing the aligned non-vapor-deposited substrate at a film formation position of the second vapor deposition stage;
a second step of moving the vapor deposition source from the first vapor deposition stage to the second vapor deposition stage;
a third step of lowering the first mask support portion of the first vapor deposition stage to a position lower than that during vapor deposition until the vapor deposition source completes vapor deposition on the non-vapor-deposited substrate placed at the film formation position of the second vapor deposition stage, replacing the vapor-deposited substrate supported by the first substrate support portion with a non-vapor-deposited substrate using a substrate transport mechanism, and thereafter raising the first mask support portion to align the relative positions of the first mask and the non-vapor-deposited substrate, and placing the aligned non-vapor-deposited substrate at the film formation position of the first vapor deposition stage; and
a fourth step of moving the vapor deposition source from the second vapor deposition stage to the first vapor deposition stage.
8. The film forming method according to claim 7,
in the first step, the second mask support portion is lowered to a height lower than a height of a highest portion of the vapor deposition source,
in the third step, the first mask support portion is lowered to a height lower than a height of a highest portion of the vapor deposition source.
9. The film forming method according to claim 7 or 8,
in the first step, after the substrate transport mechanism delivers the vapor-deposited substrate supported by the second substrate support unit from the film forming chamber, the substrate transport mechanism delivers a non-vapor-deposited substrate into the film forming chamber to support the non-vapor-deposited substrate by the second substrate support unit,
in the third step, after the substrate transport mechanism delivers the vapor-deposited substrate supported by the first substrate support unit from the film forming chamber, the substrate transport mechanism delivers a non-vapor-deposited substrate into the film forming chamber and supports the non-vapor-deposited substrate by the first substrate support unit.
10. The film forming method according to claim 7 or 8,
the first to fourth steps are repeated.
11. A method for manufacturing an organic EL element is characterized in that,
an organic film of an organic EL element is formed by the film formation method according to claim 7 or 8.
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