201246651 六、發明說明 【發明所屬之技術領域】 本發明係關於形成真空蒸鍍膜之方法及其裝置，特別 是關於在大型的基板上形成有機EL顯示裝置有效的真空 蒸鍍方法及其裝置。 【先前技術】 有機EL顯示裝置或照明裝置所使用的有機EL元 件，係從上下以陽極與陰極之一對的電極夾住由有基材料 所形成的有機層之構造，藉由對電極施加電壓，電洞從陽 極側、電子從陰極側個別地被注入有機層，藉由彼等再結 合而發光之構造。 此有機層爲包含：電洞注入層、電洞輸送層、發光 層、電子輸送層、電子注入層之多層膜所層積的構造。作 爲形成此有機層之材料，以使用高分子材料與低分子材料 者。其中，在使用低分子材料之情形，使用真空蒸鍍裝置 來形成有機薄膜。 有機EL裝置的特性係大受有機層之膜厚的影響。另 一方面，形成有機薄膜之基板，年年大型化。因此，在使 用真空蒸鍍裝置之情形，需要高精度地控制形成於大型基 板上之有機薄膜或電極用金屬薄膜之膜厚，且要長時間連 續運轉。電極用金屬薄膜伴隨大型化，需要低電阻化，特 別是作爲顯示器用，有機層之上部的電極材料，以鋁材料 最被看好。 -5- 201246651 以真空蒸鍍在基板連續形成薄膜之構造的蒸發源，於 「專利文獻1」中’揭示有設置2個以上線性蒸發源，蒸 發源中至少一個蒸發源，對於地面，或對於水平方向，以 特定的角度傾斜之蒸發源機構，使其上下移動來蒸鍍之裝 置。於「專利文獻2」中，揭示有直線配置複數個坩堝， 掃瞄蒸鍍蒸鍍源之AL合金的技術，及基板予以水平地設 置’使蒸鍍源朝上來蒸鍍之機構。另外，於「專利文獻 3」中’揭示有配置複數個坩堝，對於基板斜向地掃瞄蒸 鍍之製造裝置。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2006-249572號 [專利文獻2]專利第4545504號 [專利文獻3 ]專利第4 5 1 5 0 6 0號 【發明內容】 [發明所欲解決之課題] 於「專利文獻1」，雖揭示有：設置2個以上線性蒸 發源，蒸發源中至少一個之蒸發源，對於地面以特定的角 度傾斜之蒸鍍源機構，但複數個線性蒸發源朝向同一基板 位置，在蒸鍍縱方向大面積時，需要上下方向進行掃瞄。 前述線性蒸鍍源，在使用鋁材料之情形，由於濕潤或蔓延 之影容，無法做連續之蒸鍍。另外，線性蒸鍍源內之材料 被消耗時，蒸鍍需要停止，無法對應長時間運轉。 -6 - 201246651 於「專利文獻2」，揭示有直線配置複數個坩堝，掃 瞄蒸鍍蒸鍍源之AL合金的技術，及基板予以水平設置， 使蒸鍍源朝向來蒸鍍之機構。但是對於縱型設置之基板的 蒸鍍方法及長時間運轉，並沒揭示。 於「專利文獻3」，揭示有配置複數個坩堝，對於基 板斜向地掃瞄蒸鍍之製造裝置。但是對於縱型設置之基板 的蒸鍍方法及長時間運轉，並沒揭示。 本發明之目的在於提供：解決上述之先前技術課題， 利用設置有在同一方向排列之複數個蒸發源之蒸發源列， 對應縱向配置之大型基板，可以高速形成以鋁材料爲主之 金屬薄膜，且可連續地進行薄膜形成之真空蒸鍍方法及其 裝置。 [解決課題用之手段] 本發明主要特徵爲：使用陶瓷製坩堝，防止鋁之蔓 延，且爲了對應縱型大型基板，具有將於同一方向以特定 角度傾斜之蒸發源至少2個以上，於縱方向排列來蒸鍍之 機構。 [發明效果] 如依據本發明’爲了防止在鋁蒸鍍成爲問題之濕潤或 蔓延’採用一體式之坩堝構造，材質爲不與鋁材料反應之 熱分解性氮化硼（PBN)，藉由使PBN坩堝以特定的角 度、複數個之蒸發源斜向地配設之蒸發源列對於基板相對 201246651 地於橫方向移動，進行對於縱型配置基板之蒸鑪。因此’ 即使是大型基板，只增加蒸發源列之蒸發源數目，再大之 尺寸都可以蒸鍍。另外，在真空蒸鍍室內準備複數個蒸發 源列，藉由切換進行蒸鍍，可以對應長時間運轉。 【實施方式】 作爲本發明之真空蒸鍍裝置之一例，說明使用有機 EL裝置的製造之例子。有機EL裝置之製造裝置，係藉由 真空蒸鍍，於金屬電極層（陽極）之上層積形成電子注入 層或電子輸送層、發光層（有機薄膜）、於金屬電極層 (陰極、上部電極）之下層積形成電子注入層或電子輸送 層等之各種材料的薄膜層之裝置。 關於本發明之有機EL裝置製造裝置，其特徵爲：於 蒸鍍室具有使用陶瓷製之坩堝，防止鋁之蔓延，爲了對應 縱型大型基板，將於同一方向以特定角度傾斜之蒸發源至 少2個以上，於縱方向排列來蒸鍍之機構。以下，利用實 施例及圖來詳細說明本發明之內容。 [β施例1] 第1圖係本發明之真空蒸鍍裝置之基板構造的模型圖 及說明動作圖。本發明之蒸鍍裝置，係於蒸鍍室5內，由 基板1 -1、蒸發源3 -1、蒸發源列3 -2、膜厚監視器7所構 成，於蒸鍍室外，由：控制膜厚用之膜厚控制計8、控制 蒸發源的溫度用之蒸發源電源9、使膜厚控制計8與蒸發 -8- 201246651 源電源9連動控制，以紀錄蒸鍍資料用之控制用個人電腦 10所構成。蒸發源3-1也被稱爲努特生池（Knudsen cell )，由：PNB坩堝及加熱其用之加熱器、控制坩堝溫 度用之熱電偶、不使熱洩漏於外部用之熱密封、水冷密封 所構成。 第2(a)圖係表示顯示蒸發源3-1、基板1-1、蒸鍍 薄膜6-1之構造而從橫向所見之剖面圖。第2(a)係作爲 先前例，表示1個蒸發源3-1之情形。對於縱型配置之基 板1-1，從蒸發源3-1被斜方向放出之蒸鏟材料之蒸汽2 堆積於基板，形成蒸鍍薄膜6-1。如第2(a)圖所示般， 蒸鍍薄膜6-1係從斜方向被蒸鍍之膜，在上下方向成爲非 對稱之膜厚分布，基板1-1的周邊部，蒸鎪薄膜6-1的膜 厚變薄，於基板中央附近，膜厚分布6-4變大，使用於有 機薄膜或金屬薄膜時，變成偏差大的薄膜，裝置特性變 差。 於本實施例中，如第1圖及第2 ( b )圖所示般，將 同一方向以特定角度傾斜之蒸發源3 -1至少2個以上，於 縱方向排列進行蒸鍍。換言之，蒸發源列3 -2之各蒸發源 3 -1的長軸，對於水平方向以特定的角度在同一方向傾 斜。 於本實施例中，藉由使用和基板1 -1的上下方向之長 度同等之蒸發源列3 -2，於蒸鍍薄膜6-1爲1個之情形， 在上下方向成爲非對稱的膜厚分布，膜厚分布6-4雖然變 大，但藉由在縱方向排列，於上下方向非對稱之膜厚分布 -9 - 201246651 和鄰接的蒸發源3-1的膜厚分布重疊’形成 厚分布6-5變小。 於第1圖之實施例中’膜厚監視器7 3-2，雖以1個來進行膜厚控制’但各蒸發 文度對於電源功率爲不同’各蒸發源3·1之 變化，膜厚分布有變更大之可能性。因此’ 可藉由對蒸發源列3-2之蒸發源3-1個別各 汽出口附近，可以進行高精度之膜厚控制。 於第2(b)圖中，使用和基板1-1之 度同等的蒸發源列3-2，雖然膜厚分布6-5 布6-4小，但在基板1-1的上下端部，膜厚 係表示進一步改善膜厚分布之構造。第3圖 發源3-1、基板1-1、蒸鍍膜厚6-3之構造 見之剖面圖。藉由做成基板1-1的上下方向 發源列3-3，於基板1-1的上下端部，可以 少，進而膜厚分布6-6獲得改善。但是，在 基板上下方向之沒有基板的部分，蒸汽2也 材料的消耗量變大，成爲對於裝置內之無謂 放出，需要利用遮蔽板等，防止對於蒸鍍室 於本實施例中，基板1-1爲固定，藉由 2左右移動，來實施對於基板全體之薄膜形 發源列3-2，使基板1-1於橫方向移動來蒸 得同樣的效果。 第1圖中雖未圖示出，基板1-1藉由使 於基板上之膜 對於蒸發源列 源3 -1之坩堝 蒸汽2之量會 膜厚監視器7 1個設置於蒸 上下方向的長 可以比膜厚分 變薄。第3圖 係表示顯示蒸 而從橫方向所 長度以上的蒸 抑制膜厚的減 此情形，對於 被放出，蒸鍍 的蒸鍍材料之 5內之污染。 使蒸發源列3-成，但固定蒸 鍍，也可以獲 用具有從蒸鍍 -10- 201246651 室5的外部可以連續地供給至真空內之搬運機構 —面以批次式進行基板供給，一面可以連續地進 成。另外，藉由於基板1 -1和蒸發源列3 -2之 罩，可以進行圖案形成。 [實施例2] 於實施例1中，雖然說明基板1 -1係於蒸鑛 置1片來蒸鑛之構造，第4圖係表示在基板1-1 於鄰接之位置準備其他的基板1-2，使蒸發源列 鍍之時間減少，有效活用蒸發源3 -1的坩堝內之 的裝置構造。 於使基板1-1和基板1-2面對蒸發源列3-2 使蒸發源列3 -2之待命位置在基板1 -1和基板1 朝右在橫方向使1軸往復移動，使基板1-1形成 其成膜中，實施基板1-2之設置。基板1-1成 著，朝左於橫方向使1軸往復移動，使基板1 膜。在基板1-2形成薄膜之間，藉由使基板1-1 基板和下一基板交換進行準備，可以使運轉時間 少，能夠進行複數基板之薄膜形成。 蒸發源3-1 —旦使坩堝溫度上升至蒸發溫度 地放出蒸鍍材料，爲了長時間運轉不損失內部 料，如本實施例般，使不蒸鍍之時間減少，是 法。於本實施例中，雖是將基板2片交互地蒸鍍 但複數片也有效。另外，非本實施例之批次式， 的設備， 行薄膜形 間設置遮 室5內設 交換時， 3·2不蒸 蒸鍍材料 之位置， -2之間， 薄膜，於 膜後，接 • 2形成薄 側之玻璃 的損失減 時，經常 的蒸鍍材 有效的手 之例子， 以單片式 -11 - 201246651 固定蒸發源3-1，藉由一面使基板連續地 面蒸鍍，可以提高蒸鍍裝置之利用效率。 圖中未圖示出，但藉由使用具備基板1-1 從蒸鍍室5的外部連續地供給真空內之搬 可以批次式一面供給基板，一面連續地形成 [實施例3] 於實施例1、2中，蒸鍍材料4如放吐 內之量’需要使裝置暫時停止來補充蒸鍍材 置之連續運轉受到限制。於本實施例中，j 般，表示於蒸鍍室5內具備材料供給機i 置停止，可以進行蒸鍍材料之補充的構造。 爲鋁材料之情形，主要使用數mm尺寸之彈 使蒸發源列3 - 2移動至材料供給機i i 從斜上部方向將粒狀的材料從材料供給機 內’真空裝置之連續運轉成爲可能。但是蒸 法在加熱中進行材料投入’需要使蒸發源溫 產生蒸汽之溫度。第5圖雖未圖示出，但藉 而是2列以上的蒸發源列3 - 2配設於蒸鑛室 面交換2列以上之蒸發源列，—面控制蒸發 材料’蒸鍍之連續運轉成爲可能。材料供給 量測各蒸發源列3 -2之重量的機構，配合材 決定。 橫方向移動一 外，雖於第4 基板1-2可以 機構的設備， 薄膜。 可以投入坩堝 料4，蒸鍍裝 :口第 5圖所示 ，不使真空裝 蒸鍍材料4在 九狀的顆粒》 的位置，藉由 11投入真空 發源列3 - 2無 度降低至不會 由將不單1列 5內，可以一 源溫度來供給 量係設置可以 料的消耗量做 201246651 [實施例4] 於實施例1至3中’蒸發源3-丨雖係使用圓筒狀，量 杯形狀之PBN坩堝’在此情形，斜向設置使用的關係， 如第6(a)圖所示般’蒸鍍材料4無法放入坩堝容量的 最大量。另外，蒸汽2被斜向放出，如第2(a)圖所示 般’基板1-1的上下方向成爲非對稱之膜厚分布，要使膜 厚分布之寬度變小，有其限度》 於本實施例中’藉由使蒸發源3-1的坩堝構造成爲第 6(b)〜（d)圖所示之剖面構造，可使蒸鍍材料4的投入量 增加’能夠改善膜厚分布。第6 ( b )圖係使坩堝橫方向 配置，使出口部分之頸部周圍往下摺，成爲即使是橫向， 蒸鍍材料4也不會流失之構造，蒸汽方向也成爲橫向，在 基板1-1之上下方向，膜厚分布也變成對稱，藉由排列複 數個蒸發源3-1，全體之膜厚分布獲得改善。第6(b)圖 之蒸發源3-1，爲長軸是水平方向，噴出蒸汽之開口，形 成於比蒸發源的垂直方向的中心還上方。 第6 ( c )圖係使坩堝朝縱向，只有出口部分朝橫向 之構造，可以使蒸鍍材料4之投入量增加’且蒸汽方向也 成爲橫向，在基板1-1的上下方向’膜厚分布也成爲對 稱，藉由排列複數個蒸發源3 -1 ’全體之膜厚分布獲得改 善。第6(c)圖之蒸發源3-1，其長軸爲垂直方向’噴出 蒸汽之開口，形成於比蒸發源之垂直方向的中心還上方。 但是在第6 ( c )圖之情形’於縱方向排列複數個蒸發源 3 -1，坩堝在縱方向延伸’無法使蒸發源彼此之間隔變 -13- 201246651 小，膜厚分布有變寬之情形。 第6 ( d )圖係使坩堝斜向傾斜，只有出口部分爲橫 向之構造，蒸鍍材料4之投入量雖和第6(a)圖之情形 沒有太大改變’但蒸汽方向成爲橫向，在基板1-1之上下 方向，膜厚分布也成爲對稱，藉由排列複數個蒸發源3-1，全體的膜厚分布也可以改善。 另一方面’在以PBN製作第6 ( b )〜（d)圖之坩堝構 造的情形，係以CVD成膜來製作PBN坩堝，在複雜構造 的情形，花時間，坩堝製造成本變高，在膜厚分布之寬度 即使大也沒有關係的情形，可以採用可以降低坩堝製造成 本之第6(a)圖的坩堝構造。 [實施例5] 於實施例3中，藉由使用材料供給機11，可以連續 運轉，但在本實施例中，第7圖係表示設置2個以上之蒸 發源列，使得可以連續運轉之情形。第7圖是從上來看裝 置構造之模型圖。設置2個蒸發源列3 - 3與蒸發源列3 -4，各蒸發源具備能以閘門閥12分離之真空內移動機構 13，在蒸鍍室5內對於基板1-1可以橫方向移動》 第7圖中，蒸發源列3-3爲加熱中蒸汽噴出之狀況， 正實施薄膜形成中。蒸發源列3 -4則以閘門閥1 2和蒸鍍 室5真空分離，在真空內移動機構13內停止之狀態。蒸 發源列3 -4如關閉閘門閥1 2，於此狀態下，可被取出於 大氣中，進行材料交換、維護。 -14- 201246651 蒸發源列3 -3之材料一變少時，在第7圖之狀態下’ 使蒸發源列3 -4成爲可以蒸鍍之狀態’藉由閘門閥1 2之 開關，使得蒸發源列3 -3與蒸發源列3 -4在可以蒸鍍之狀 態下切換。因此，如重複上述步驟，可以長時間的連續運 轉。真空內移動機構13在本實施例之第7圖中’雖表示 爲蛇腹管方式，但以大氣箱方式等之其他的方法亦可。第 7圖中，雖說明設置1片之基板1 -1的方式，但如實施例 2所示般，藉由設置2片以上的基板，可以降低基板交換 時之蒸鍍材料損失。 [實施例6] 於實施例5中，真空內移動機構13需要基板1-1之 橫向寬度以上的伸縮，裝置面積變大。在本實施例中，第 8圖係表示爲了使裝置面積變小，將基板交換從批次式變 更爲單片式之實施例。第8圖係由（a)上視圖、及（b) 側面圖所形成，表示裝置構造的模型圖。 蒸發源列3 -3與蒸發源列3 _4係使用能以閘門閥1 2 分離之真空內移動機構13，藉由和實施例5同樣地切換 使用，可以連續運轉。真空內移動機構13係以可以使蒸 發源列3-3與蒸發源列3-4對蒸鍍室5內進出之移動距 離，大小不成爲問題，比起實施例5，可以使裝置面積變 小。但是基板1 -1係以單片式進行基板交換，需要以縱型 配置進行基板搬運之機構。第8圖中雖未圖示出，但係成 爲從第8(a)圖之基板1-1的上部搬運蒸鍍前基板，蒸鍍 -15- 201246651 後，從基板1-1的下部搬出之構造。 [實施例7 ] 於實施例6中，真空內移動機構13需要在蒸發源坩 堝之長軸方向移動，能以閘門閥12分離之移動距離。在 本實施例中，藉由使移動和蒸發源坩堝的蒸鍍方向垂直方 向的短移動距離之機構，比起實施例6，可以實現更小之 裝置面積。 第9圖係從上所見之模型圖。藉由使蒸鍍室5之蒸發 源導入部分朝內側縮小，可以進一步實現裝置面積之縮小 化。可以使蒸發源列3 - 3與蒸發源列3 -4對蒸鍍室5內進 出之移動距離，爲第9圖之上下方向，和實施例6相比， 知道可以更短。 另外，爲單片式，蒸發源之移動距離，可以是蒸發源 列3-3與蒸發源列3-4之對蒸鍍室5內的進出移動距離， 比起實施例5，可以使裝置面積變小。但是基板1 -1爲單 片式進行基板交換，需要以縱型配置進行基板搬運之機 構。第9圖雖未圖示出，但係從第9圖之基板1-1的上部 搬運蒸鍍前基板，於蒸鍍後，從基板1-1的下部搬出之構 造。 [實施例8] 第10圖係表示有機EL裝置生產工程之一例的工程 圖。於實施例1〜7中，主要說明此生產工程之金屬蒸鍍 -16- 201246651 的工程。第ίο圖中，形成有控制流往有機層與有機層之 電流的薄膜電晶體（TFT )之TFT基板、及保護有機層免 受外部濕氣之密封基板，係個別地形成，於密封工程中被 組裝起來。 於第10圖之TFT基板的製造工程中，對於被濕式洗 淨的基板進行乾式洗淨。乾式洗淨也包含藉由紫外線照射 之洗淨的情形。被乾式洗淨的 TFT基板，首先形成 TFT。於TFT之上形成鈍化膜及平坦化膜，於其上形成有 機EL層之下部電極。下部電極係和TFT的汲極連接。在 將下部電極當成陽極之情形，例如使用IΤ Ο ( I n d i u m Tin Oxide :銦錫氧化）膜。 於下部電極之上形成有機EL層。有機EL層係由複 數層所構成。下部電極爲陽極之情形，從下爲例如：電洞 注入層、電洞輸送層、發光層、電子輸送層、電子注入 層。此種有機EL層係藉由蒸鍍來形成，於其上形成上部 電極層。上部電極層係藉由實施例1〜實施例7所敘述之 蒸鍍裝置或蒸鎪方法來形成。 於有機EL層之上，以整面膜形成上部電極。在有機 EL顯示裝置爲上部放射之情形，上部電極使用IZO等之 透明電極，在有機EL顯示裝置爲接合下部放射之情形， 使用A1等之金屬膜。 於第10圖之密封基板工程中，對於進行濕式洗淨及 乾式洗淨的密封基板，配置有乾燥劑（desiccant )。有機 EL層如有水分會劣化，爲了去除內部的水分而使用乾燥 -17- 201246651 劑。乾燥劑可以使用各種材料，有機EL顯示裝置係依據 上部放射或下部放射，乾燥劑的配置方法不同。 如此，個別製造之T F T基板和密封基板，於密封工 程中被組裝起來。爲了密封TFT基板和密封基板用之密 封材，係被形成於密封基板。於組裝密封基板和TFT基 板後，對密封部照射紫外線，使密封部硬化，完成密封。 對如此形成之有機EL顯示裝置進行點燈檢査。於點 燈檢査中，即使是產生黑點、白點等之缺陷的情形，可以 進行缺陷修正者，進行修正，完成有機EL顯示裝置。 依據本發明，藉由複數層所形成之有機EL層，可以 抑制因異物所致之污染，且能以短之週期時間完成，.可使 有機EL顯示裝置之製造成本降低，提高良率。進而可以 正確地控制有機EL層之各層的成分，能夠製造特性再現 性高，且可靠性高之有機EL顯示裝置。 【圖式簡單說明】 第1圖係表示本發明之第1實施例中之蒸發源列與蒸 鍍室、基板、膜厚監視器之構造的模型圖及說明動作圖。 第2圖係表示本發明之第1實施例中之蒸發源與基 板、蒸鍍薄膜及薄膜之膜厚分布的關係之剖面模型圖。 第3圖係表示改善本發明之第1實施例中之薄膜的膜 厚分布用之構造的剖面模型圖。 第4圖係表示本發明之第2實施例中之蒸發源列與蒸 鍍室、基板、膜厚監視器之構造的模型圖及說明動作圖。 -18- 201246651 第5圖係表示本發明之第3實施例中之蒸發源列與蒸 鍍室、基板、膜厚監視器之構造的模型圖及說明動作圖。 第6圖係表示本發明之第4實施例中之蒸發源剖面構 造的模型圖。 第7圖係表示本發明之第5實施例中之蒸發源列與蒸 鍍室 '基板、閘門閥、真空內移動機構之構造模型圖與說 明動作圖。 第8圖係表示本發明之第6實施例中之蒸發源列與蒸 鍍室、基板、閘門閥、真空內移動機構之構造模型圖與說 明動作圖。 第9圖係表示本發明之第7實施例中之蒸發源列與蒸 鍍室、基板、閘門閥、真空內移動機構之構造模型圖與說 明動作圖。 第10圖係表示本發明之第8圖之實施例中之有機EL 裝置生產工程之一例的工程圖。 【主要元件符號說明】 1-1 :基板 1-2 :基板 2 :蒸汽 3-1 :蒸發源 3-2 :蒸發源列 3-3 :蒸發源列 3-4 :蒸發源列 -19- 201246651 4 :蒸鍍材料 5 :蒸鍍室 6-1 :蒸鍍薄膜 6-2 :蒸鍍薄膜 6-3 :蒸鍍薄膜 6-4 :膜厚分布 6 - 5 :膜厚分布 6-6 :膜厚分布 7 :膜厚監視器 8 :膜厚控制計 9 :蒸發源電源 1 〇 :控制用個人電腦 1 1 :材料供給機 1 2 :閘門閥 13 :真空內移動機構 -20BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for forming a vacuum vapor deposited film, and more particularly to a vacuum vapor deposition method and apparatus for forming an organic EL display device on a large substrate. [Prior Art] The organic EL element used in the organic EL display device or the illuminating device is configured by sandwiching an organic layer formed of a base material from an electrode of one pair of the anode and the cathode, and applying a voltage to the electrode. The hole is injected into the organic layer from the anode side and the electrons from the cathode side, and the structure is illuminated by recombination. This organic layer is a structure in which a multilayer film including a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer is laminated. As a material for forming the organic layer, a polymer material and a low molecular material are used. Among them, in the case of using a low molecular material, a vacuum evaporation apparatus is used to form an organic thin film. The characteristics of the organic EL device are greatly affected by the film thickness of the organic layer. On the other hand, the substrate on which the organic film is formed is enlarged in size every year. Therefore, in the case of using a vacuum vapor deposition apparatus, it is necessary to control the film thickness of the organic thin film or the metal thin film for electrodes formed on a large substrate with high precision, and it is necessary to continuously operate for a long time. In order to increase the size of the metal film for electrodes, it is necessary to reduce the resistance. In particular, it is used as a display, and the electrode material on the upper portion of the organic layer is most favored with aluminum. -5-201246651 An evaporation source having a structure in which a thin film is continuously formed on a substrate by vacuum deposition, and "Patent Document 1" discloses that two or more linear evaporation sources are provided, and at least one evaporation source is provided for the ground, or for In the horizontal direction, the evaporation source mechanism is tilted at a specific angle to move it up and down to evaporate the device. In Patent Document 2, there is disclosed a technique in which a plurality of crucibles are arranged in a line, an AL alloy for vapor deposition vapor deposition source is scanned, and a substrate is horizontally disposed to eject a vapor deposition source upward. Further, in "Patent Document 3", a manufacturing apparatus in which a plurality of crucibles are arranged and the substrate is scanned obliquely in the oblique direction is disclosed. [Prior Art Document] [Patent Document 1] Japanese Patent Laid-Open No. Hei. No. 2006-249572 [Patent Document 2] Patent No. 4545504 [Patent Document 3] Patent No. 4 5 1 5 0 60 No. [Problems to be Solved by the Invention] Patent Document 1 discloses a vapor deposition source mechanism in which at least one of an evaporation source is provided with two or more linear evaporation sources and an evaporation source at a specific angle. A plurality of linear evaporation sources are directed to the same substrate position, and when the vapor deposition is large in the longitudinal direction, scanning in the vertical direction is required. In the case of the above-mentioned linear vapor deposition source, in the case of using an aluminum material, continuous vapor deposition cannot be performed due to the wet or spread shadow. Further, when the material in the linear vapor deposition source is consumed, the vapor deposition needs to be stopped, and it is not possible to operate for a long time. In "Patent Document 2", a technique of arranging a plurality of cymbals in a straight line, scanning an AL alloy of a vapor deposition vapor source, and a mechanism in which a substrate is horizontally placed and a vapor deposition source is vapor-deposited is disclosed. However, the vapor deposition method and long-term operation of the substrate which is vertically disposed are not disclosed. Patent Document 3 discloses a manufacturing apparatus in which a plurality of crucibles are arranged and the vapor deposition is obliquely scanned on the substrate. However, the vapor deposition method and long-term operation of the substrate provided in the vertical type are not disclosed. It is an object of the present invention to provide a metal thin film mainly composed of an aluminum material at a high speed by using an evaporation source array provided with a plurality of evaporation sources arranged in the same direction and corresponding to a large-sized substrate arranged in the vertical direction. Moreover, the vacuum evaporation method and apparatus for film formation can be continuously performed. [Means for Solving the Problem] The main feature of the present invention is to prevent the spread of aluminum by using a ceramic crucible, and to have at least two or more evaporation sources inclined at a specific angle in the same direction in order to correspond to a vertical large-sized substrate. A mechanism for arranging the vapor deposition. [Effect of the Invention] According to the present invention, in order to prevent the wetting or spreading of aluminum vapor deposition as a problem, a one-piece structure is used, and the material is thermally decomposable boron nitride (PBN) which does not react with the aluminum material, PBN坩埚 The evaporation source row which is disposed obliquely at a specific angle and a plurality of evaporation sources is moved in the lateral direction with respect to the substrate relative to 201246651, and a steam furnace for vertically arranging the substrate is performed. Therefore, even for a large substrate, only the number of evaporation sources in the evaporation source column is increased, and the larger size can be vapor-deposited. Further, a plurality of evaporation source columns are prepared in the vacuum deposition chamber, and by performing vapor deposition, it is possible to operate for a long time. [Embodiment] An example of manufacturing using an organic EL device will be described as an example of a vacuum vapor deposition device of the present invention. The apparatus for manufacturing an organic EL device is formed by laminating an electron injecting layer or an electron transporting layer, a light emitting layer (organic thin film), and a metal electrode layer (cathode, upper electrode) on a metal electrode layer (anode) by vacuum evaporation. A device for laminating a thin film layer of various materials such as an electron injecting layer or an electron transporting layer. The apparatus for manufacturing an organic EL device according to the present invention is characterized in that the vapor deposition chamber has a crucible made of ceramics to prevent the spread of aluminum, and the evaporation source that is inclined at a specific angle in the same direction is at least 2 in order to correspond to the vertical large-sized substrate. More than one, the mechanism for vapor deposition is arranged in the longitudinal direction. Hereinafter, the contents of the present invention will be described in detail by way of embodiments and drawings. [β Example 1] Fig. 1 is a model diagram and an explanatory operation diagram of a substrate structure of a vacuum vapor deposition device of the present invention. The vapor deposition device of the present invention is formed in the vapor deposition chamber 5, and is composed of a substrate 1-1, an evaporation source 3-1, an evaporation source row 2-3, and a film thickness monitor 7, and is controlled by a vapor deposition chamber. The film thickness control meter for film thickness, the evaporation source power source 9 for controlling the temperature of the evaporation source, and the film thickness control meter 8 and the evaporation -8-201246651 source power source 9 are controlled in conjunction with each other to record the control individual for vapor deposition data. The computer 10 is composed of. The evaporation source 3-1 is also called a Knudsen cell, and is composed of: PNB坩埚 and a heater for heating the same, a thermocouple for controlling the temperature of the crucible, a heat seal for preventing heat from leaking to the outside, and water cooling. Made up of a seal. Fig. 2(a) is a cross-sectional view showing the structure of the evaporation source 3-1, the substrate 1-1, and the vapor-deposited film 6-1 as seen from the lateral direction. The second (a) is a previous example and shows the case of one evaporation source 3-1. In the substrate 1-1 of the vertical arrangement, the steam 2 of the steaming material which is discharged obliquely from the evaporation source 3-1 is deposited on the substrate to form a vapor-deposited film 6-1. As shown in Fig. 2(a), the vapor-deposited film 6-1 is a film which is vapor-deposited from the oblique direction, and has an asymmetric film thickness distribution in the vertical direction, and a vapor-deposited film 6 in the peripheral portion of the substrate 1-1. When the film thickness of -1 is thin, the film thickness distribution 6-4 becomes large near the center of the substrate, and when it is used for an organic film or a metal film, it becomes a film with a large variation, and the device characteristics are deteriorated. In the present embodiment, as shown in Figs. 1 and 2(b), at least two or more evaporation sources 3-1 inclined at a specific angle in the same direction are arranged and vapor-deposited in the longitudinal direction. In other words, the long axes of the respective evaporation sources 3 - 1 of the evaporation source train 3 - 2 are inclined in the same direction at a specific angle with respect to the horizontal direction. In the present embodiment, by using the evaporation source row 3-2 having the same length as the length of the substrate 1-1 in the vertical direction, when the vapor deposition film 6-1 is one, the film thickness becomes asymmetric in the vertical direction. The distribution, the film thickness distribution 6-4 is large, but by arranging in the longitudinal direction, the film thickness distribution -9 - 201246651 in the vertical direction and the film thickness distribution of the adjacent evaporation source 3-1 overlap to form a thick distribution. 6-5 becomes smaller. In the embodiment of Fig. 1, the film thickness monitor 7 3-2 performs the film thickness control in one case, but the evaporation degrees are different for the power source power, and the film thickness is changed by each evaporation source 3·1. There is a possibility that the distribution will change greatly. Therefore, it is possible to perform film thickness control with high precision by the vicinity of the individual vapor outlets of the evaporation source 3-1 of the evaporation source row 3-2. In the second (b) diagram, the evaporation source row 3-2 having the same degree as the substrate 1-1 is used, and although the film thickness distribution 6-5 is 6-4, the upper and lower ends of the substrate 1-1 are small. The film thickness indicates a structure in which the film thickness distribution is further improved. Fig. 3 Structure of source 3-1, substrate 1-1, and vapor deposition film thickness 6-3 See the cross-sectional view. By forming the vertical direction source row 3-3 of the substrate 1-1, the number of the upper and lower ends of the substrate 1-1 can be reduced, and the film thickness distribution 6-6 can be improved. However, in the portion where there is no substrate in the vertical direction of the substrate, the amount of consumption of the material of the steam 2 is increased, and it is necessary to release the material in the apparatus, and it is necessary to use a shielding plate or the like to prevent the vapor deposition chamber from being in the present embodiment. In order to fix, the film-shaped source line 3-2 for the entire substrate is moved by moving left and right, and the substrate 1-1 is moved in the lateral direction to obtain the same effect. Although not shown in the first drawing, the substrate 1-1 has a film thickness monitor 7 disposed in the vertical direction of the vapor by the amount of the vapor 2 on the substrate on the evaporation source source 3-1. The length can be thinner than the film thickness. Fig. 3 is a view showing the decrease in the thickness of the vapor deposition film which is more than the length in the lateral direction, and the contamination in the vapor deposition material 5 which is discharged. When the evaporation source is 3-made, but the vapor deposition is fixed, it is also possible to obtain a substrate supply in a batch manner by a transport mechanism that can be continuously supplied to the vacuum from the outside of the vapor deposition-10-201246651 chamber 5. It can be made continuously. Further, patterning can be performed by the cover of the substrate 1-1 and the evaporation source row 3-2. [Embodiment 2] In the first embodiment, the substrate 1-1 is described as a structure in which one piece of steamed ore is placed to evaporate, and the fourth figure shows that another substrate 1 is prepared at a position adjacent to the substrate 1-1. 2. The time for plating the evaporation source column is reduced, and the device structure in the crucible of the evaporation source 3-1 is effectively utilized. The substrate 1-1 and the substrate 1-2 are faced to the evaporation source row 3-2 such that the standby position of the evaporation source row 3-2 reciprocates in the lateral direction on the substrate 1-1 and the substrate 1 in the lateral direction, so that the substrate In the film formation of 1-1, the substrate 1-2 was placed. The substrate 1-1 is formed so as to reciprocate one axis to the left in the lateral direction to form a film of the substrate 1. By preparing the substrate 1-2 to form a thin film, by exchanging the substrate 1-1 substrate and the next substrate, the operation time can be reduced, and film formation of a plurality of substrates can be performed. The evaporation source 3-1 releases the vapor deposition material by raising the temperature of the crucible to the evaporation temperature, and does not lose the internal material for a long period of time. As in the present embodiment, the time for the non-vapor deposition is reduced. In the present embodiment, the two sheets of the substrate are alternately vapor-deposited, but the plurality of sheets are also effective. In addition, the apparatus of the batch type, which is not the embodiment, is arranged in the film-shaped compartment 5, when the exchange is performed, the position of the material is not vaporized, -2, and the film is connected after the film. • 2 The loss of the glass forming the thin side is reduced. The example of the hand that is effective for the vapor deposition material is fixed by the single-layer -11 - 201246651 fixed evaporation source 3-1, and the substrate can be continuously vapor-deposited on one side. The utilization efficiency of the vapor deposition device. Although not shown in the drawing, the substrate is continuously supplied to the substrate from the outside of the vapor deposition chamber 5 by using the substrate 1-1, and the substrate is continuously supplied in a batch manner. [Example 3] In 1, 2, the amount of the vapor deposition material 4, such as the amount of venting, is required to temporarily stop the apparatus to supplement the continuous operation of the vapor deposition material. In the present embodiment, the material supply device i is stopped in the vapor deposition chamber 5, and the vapor deposition material can be replenished. In the case of an aluminum material, it is mainly possible to use a bomb of several mm size to move the evaporation source train 3-2 to the material supply machine i i from the oblique upper direction to continuously operate the granular material from the material supply machine 'vacuum device'. However, the steaming method performs material input during heating, and it is necessary to make the temperature of the evaporation source to generate steam. Although not shown in Fig. 5, the evaporation source row 3-2 of two or more columns is disposed in the evaporation source row in which two or more columns of the vapor deposition chamber are exchanged, and the surface control evaporating material 'continuous operation of vapor deposition become possible. Material supply The mechanism for measuring the weight of each evaporation source train 2-3 is determined by the material. Moving in the lateral direction, although the fourth substrate 1-2 can be a device for the device, the film. It is possible to put in the dip 4, and the vapor deposition: as shown in Fig. 5, the vacuum deposition material 4 is not placed in the position of the nine-shaped particles, and the vacuum source column 3 - 2 is lowered to no extent. In the case of not only one column 5, the amount of consumption that can be supplied by a source temperature can be made 201246651 [Example 4] In Examples 1 to 3, the evaporation source 3-丨 is a cylindrical shape, a measuring cup In the case of the shape of the PBN坩埚', in this case, the relationship is used obliquely, as shown in Fig. 6(a), the maximum amount of the vapor deposition material 4 cannot be placed in the crucible capacity. Further, the steam 2 is discharged obliquely, and as shown in Fig. 2(a), the vertical direction of the substrate 1-1 becomes an asymmetric film thickness distribution, and the width of the film thickness distribution is reduced, and the limit thereof is In the present embodiment, by increasing the enthalpy structure of the evaporation source 3-1 into the cross-sectional structure shown in the sixth (b) to (d), the amount of the vapor deposition material 4 can be increased, and the film thickness distribution can be improved. The sixth (b) diagram is such that the lateral direction of the neck portion is folded so that the neck portion of the outlet portion is folded downward, so that the vapor deposition material 4 is not lost even in the lateral direction, and the steam direction is also lateral, on the substrate 1 - In the upper and lower directions, the film thickness distribution also becomes symmetrical, and by arranging a plurality of evaporation sources 3-1, the overall film thickness distribution is improved. The evaporation source 3-1 of Fig. 6(b) has a long axis which is horizontal, and an opening for ejecting steam, which is formed above the center in the direction perpendicular to the evaporation source. The sixth (c) diagram is such that the 坩埚 is oriented in the longitudinal direction, and only the outlet portion is oriented in the lateral direction, so that the amount of the vapor deposition material 4 can be increased and the steam direction is also lateral, and the film thickness distribution in the up and down direction of the substrate 1-1 It also becomes symmetrical, and is improved by arranging the film thickness distribution of a plurality of evaporation sources 3-1'. The evaporation source 3-1 of Fig. 6(c) has a long axis which is an opening in which the vapor is ejected in the vertical direction, and is formed above the center in the direction perpendicular to the evaporation source. However, in the case of Fig. 6(c), 'the plurality of evaporation sources 3-1 are arranged in the longitudinal direction, and the 坩埚 extends in the longitudinal direction'. The evaporation source cannot be separated from each other by -13 to 201246651, and the film thickness distribution is widened. situation. The sixth (d) diagram slantes the slanting direction, and only the outlet portion has a lateral configuration. The amount of the vapor deposition material 4 does not change much as in the case of Fig. 6(a), but the steam direction becomes lateral, In the upper and lower directions of the substrate 1-1, the film thickness distribution is also symmetrical, and by arranging a plurality of evaporation sources 3-1, the overall film thickness distribution can be improved. On the other hand, in the case where the structure of the sixth (b) to (d) figure is made of PBN, the PBN坩埚 is formed by CVD film formation, and in the case of a complicated structure, it takes time and the manufacturing cost becomes high. In the case where the width of the film thickness distribution is large, it is possible to adopt a crucible structure of Fig. 6(a) which can reduce the manufacturing cost of the crucible. [Embodiment 5] In Embodiment 3, continuous operation can be performed by using the material supply machine 11, but in the present embodiment, Fig. 7 shows a case where two or more evaporation source columns are provided so that continuous operation is possible. . Figure 7 is a model diagram of the device structure from the top. Two evaporation source rows 3 - 3 and evaporation source rows 3 - 4 are provided, and each evaporation source is provided with an in-vacuum moving mechanism 13 that can be separated by the gate valve 12, and the substrate 1-1 can be moved laterally in the vapor deposition chamber 5" In Fig. 7, the evaporation source row 3-3 is a state in which steam is ejected during heating, and is being formed into a film. The evaporation source train 3 - 4 is vacuum-separated by the gate valve 12 and the vapor deposition chamber 5, and is stopped in the moving mechanism 13 in the vacuum. The evaporating source column 3 - 4 can be taken out of the atmosphere for material exchange and maintenance if the gate valve 1 2 is closed. -14- 201246651 When the material of the evaporation source train 3 - 3 is reduced, in the state of Fig. 7, 'the evaporation source column 3 - 4 is made into a vapor-depositable state" by the switching of the gate valve 12 to cause evaporation The source row 3 - 3 and the evaporation source row 3 - 4 are switched in a state in which evaporation is possible. Therefore, if the above steps are repeated, it can be continuously operated for a long time. In the seventh embodiment of the present embodiment, the in-vacuum moving mechanism 13 is shown as a bellows type, but may be other methods such as an air box method. In the seventh embodiment, a method of providing one substrate 1-1 is described. However, as shown in the second embodiment, by providing two or more substrates, it is possible to reduce the loss of vapor deposition material during substrate exchange. [Embodiment 6] In the fifth embodiment, the in-vacuum moving mechanism 13 requires expansion and contraction of the lateral width of the substrate 1-1, and the apparatus area is increased. In the present embodiment, Fig. 8 shows an embodiment in which the substrate exchange is changed from a batch type to a single piece in order to make the apparatus area small. Fig. 8 is a model diagram showing the structure of the device, which is formed by (a) a top view and (b) a side view. The evaporation source row 3-3 and the evaporation source row 3_4 are continuously operated in the same manner as in the fifth embodiment by using the in-vacuum moving mechanism 13 which can be separated by the gate valve 1 2 . The moving mechanism 13 in the vacuum is such that the moving distance between the evaporation source row 3-3 and the evaporation source row 3-4 in the vapor deposition chamber 5 is not a problem, and the device area can be made smaller than in the fifth embodiment. . However, the substrate 1-1 is a substrate exchanged in a single piece, and a mechanism for transporting the substrate in a vertical arrangement is required. Although not shown in FIG. 8, the front substrate of the vapor deposition is conveyed from the upper portion of the substrate 1-1 of the eighth (a), and the vapor deposition is carried out from the lower portion of the substrate 1-1 after vapor deposition -15 to 201246651. structure. [Embodiment 7] In Embodiment 6, the moving mechanism 13 in the vacuum needs to be moved in the longitudinal direction of the evaporation source ,, and the moving distance which can be separated by the gate valve 12 can be obtained. In the present embodiment, a smaller device area can be realized than that of the sixth embodiment by the mechanism for moving the moving direction of the evaporation source in the vertical direction of the vapor deposition direction. Figure 9 is a model diagram seen from above. By reducing the evaporation source introduction portion of the vapor deposition chamber 5 toward the inside, it is possible to further reduce the device area. The moving distance between the evaporation source row 3 - 3 and the evaporation source row 3 - 4 in the vapor deposition chamber 5 can be made to be in the up-down direction of the ninth drawing, and it is known that it can be made shorter than in the sixth embodiment. In addition, in the single piece type, the moving distance of the evaporation source may be the moving distance between the evaporation source column 3-3 and the evaporation source column 3-4 in the vapor deposition chamber 5, and the device area can be made larger than that in the fifth embodiment. Become smaller. However, the substrate 1-1 is a single-piece substrate exchange, and it is necessary to carry out substrate transport in a vertical arrangement. Although not shown in the figure, the front substrate of the vapor deposition is conveyed from the upper portion of the substrate 1-1 of Fig. 9 and is carried out from the lower portion of the substrate 1-1 after vapor deposition. [Embodiment 8] Fig. 10 is a view showing an example of an example of a production process of an organic EL device. In the first to seventh embodiments, the metal deposition of the production process -16-201246651 is mainly explained. In the figure, a TFT substrate formed with a thin film transistor (TFT) for controlling a current flowing to the organic layer and the organic layer, and a sealing substrate for protecting the organic layer from external moisture are separately formed in the sealing process. Being assembled. In the manufacturing process of the TFT substrate of Fig. 10, the wet-cleaned substrate is subjected to dry cleaning. Dry cleaning also includes cleaning by ultraviolet radiation. The TFT substrate that has been dry-washed is first formed into a TFT. A passivation film and a planarization film are formed over the TFT, and an electrode below the organic EL layer is formed thereon. The lower electrode system is connected to the drain of the TFT. In the case where the lower electrode is regarded as an anode, for example, an I d u (I n d i u m Tin Oxide) film is used. An organic EL layer is formed over the lower electrode. The organic EL layer is composed of a plurality of layers. In the case where the lower electrode is an anode, for example, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer are as follows. Such an organic EL layer is formed by vapor deposition, on which an upper electrode layer is formed. The upper electrode layer is formed by the vapor deposition apparatus or the vapor deposition method described in the first to seventh embodiments. An upper electrode is formed on the entire surface of the organic EL layer. In the case where the organic EL display device is radiated to the upper portion, a transparent electrode such as IZO is used as the upper electrode, and a metal film such as A1 is used in the case where the organic EL display device is irradiated to the lower portion. In the sealing substrate project of Fig. 10, a desiccant is disposed on the sealing substrate subjected to wet cleaning and dry cleaning. If the organic EL layer is degraded by moisture, dry -17-201246651 is used to remove the internal moisture. Various materials can be used for the desiccant, and the organic EL display device differs depending on the upper or lower emission and the configuration of the desiccant. Thus, the separately manufactured TF substrate and the sealing substrate are assembled in the sealing process. In order to seal the TFT substrate and the sealing material for the sealing substrate, it is formed on the sealing substrate. After the sealing substrate and the TFT substrate are assembled, the sealing portion is irradiated with ultraviolet rays to cure the sealing portion, and the sealing is completed. The lighting inspection of the thus formed organic EL display device was performed. In the lighting inspection, even if a defect such as a black dot or a white dot is generated, the defect corrector can be corrected and the organic EL display device can be completed. According to the present invention, the organic EL layer formed by the plurality of layers can suppress contamination by foreign matter and can be completed in a short cycle time, thereby reducing the manufacturing cost of the organic EL display device and improving the yield. Further, it is possible to accurately control the components of the respective layers of the organic EL layer, and it is possible to manufacture an organic EL display device having high property reproducibility and high reliability. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a model diagram and an explanatory operation diagram showing a structure of an evaporation source row, a vapor deposition chamber, a substrate, and a film thickness monitor in the first embodiment of the present invention. Fig. 2 is a cross-sectional model diagram showing the relationship between the evaporation source and the thickness distribution of the substrate, the deposited film and the film in the first embodiment of the present invention. Fig. 3 is a cross-sectional model diagram showing a structure for improving the film thickness distribution of the film in the first embodiment of the present invention. Fig. 4 is a model diagram and an explanatory operation diagram showing the structure of the evaporation source row, the vapor deposition chamber, the substrate, and the film thickness monitor in the second embodiment of the present invention. -18-201246651 Fig. 5 is a model diagram and an explanatory operation diagram showing the structure of the evaporation source row, the vapor deposition chamber, the substrate, and the film thickness monitor in the third embodiment of the present invention. Fig. 6 is a model diagram showing the cross-sectional structure of the evaporation source in the fourth embodiment of the present invention. Fig. 7 is a structural view and an explanatory view showing the structure of the evaporation source row and the vapor deposition chamber 'substrate, the gate valve, and the vacuum moving mechanism in the fifth embodiment of the present invention. Fig. 8 is a structural view and an explanatory view showing the evaporation source row, the vapor deposition chamber, the substrate, the gate valve, and the vacuum moving mechanism in the sixth embodiment of the present invention. Fig. 9 is a structural model diagram and an explanatory diagram showing the evaporation source row, the vapor deposition chamber, the substrate, the gate valve, and the vacuum moving mechanism in the seventh embodiment of the present invention. Fig. 10 is a view showing an example of an example of the production process of the organic EL device in the embodiment of Fig. 8 of the present invention. [Description of main component symbols] 1-1: Substrate 1-2: Substrate 2: Steam 3-1: Evaporation source 3-2: Evaporation source column 3-3: Evaporation source column 3-4: Evaporation source column -19-201246651 4: vapor deposition material 5: vapor deposition chamber 6-1: vapor deposition film 6-2: vapor deposition film 6-3: vapor deposition film 6-4: film thickness distribution 6 - 5 : film thickness distribution 6-6: film Thickness distribution 7 : Film thickness monitor 8 : Film thickness controller 9 : Evaporation source power supply 1 〇 : Control personal computer 1 1 : Material supply machine 1 2 : Gate valve 13 : Vacuum movement mechanism -20