JP2014189878A - Vapor deposition apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an evaporation source capable of preventing occurrence of dispersion of a temperature in a crucible, and having a small energy loss, in a vapor deposition apparatus having a linear evaporation source having a long crucible.SOLUTION: In an evaporation source 4 having a crucible 22 extending in a first direction, and having a plurality of openings 34 opened side by side in the first direction on the upper surface, and a heater 23 which is first heating means arranged on the outside of the crucible 22, for heating the crucible 22, the reflection surface of each inclined reflection board 41 which is second heating means provided along the surface extending in the first direction of the crucible 22 on the outside of the crucible 22 is arranged toward each end in the first direction of the crucible 22.

Description

  The present invention relates to a vapor deposition apparatus, and more particularly to a technique effective when applied to a vapor deposition apparatus including a vapor deposition crucible having a long shape extending in one direction.

  When manufacturing an organic electroluminescence (organic EL: Organic Electro-Luminescence) light emitter composed of a multilayer structure including a light emitting layer formed between an anode and a cathode, the multilayer structure and the cathode are formed. . The layers constituting the laminated structure, each layer made of an organic compound, an inorganic compound, a metal, or the like are formed using a vacuum deposition method or the like.

  As a film forming method by a vacuum evaporation method, a method using the following apparatus is known. A vapor deposition apparatus used in the vacuum vapor deposition method includes, for example, a vacuum chamber which is a sealed container, and an evaporation source disposed in the vacuum chamber. The evaporation source has a container for depositing a vapor deposition material, that is, a crucible for vapor deposition, and an opening for discharging the vapor deposition material is formed on one surface of the vapor deposition crucible. In the vapor deposition step, the vapor deposition crucible is heated by the heating means to vaporize the vapor deposition material in the vapor deposition crucible. Then, the vapor deposition material is sprayed onto the deposition target (for example, a glass substrate) that is close to the deposition crucible and faces the opening in the vacuum chamber.

  In recent years, in order to cope with an increase in the size of a substrate to be vapor-deposited, a method has been proposed in which an evaporation source having a long shape extending in one direction is used, for example, a vapor deposition material is sprayed on the substrate while scanning the evaporation source. Has been. Thus, an evaporation source including a long container extending in one direction is called a linear evaporation source.

  Patent Document 1 (Japanese Patent Laid-Open No. 2010-150663) describes that the temperature distribution in the heater crucible is made uniform by dissipating heat to the floor of the chamber through a plurality of support portions of the heater crucible.

  In Patent Document 2 (International Patent Publication WO2006 / 075755), the vapor deposition material in the vessel is uniformly heated by adjusting the winding density of the filament constituting the heater for heating the vapor deposition material in the crucible. Is described.

JP 2010-150663 A International Patent Publication No. WO2006 / 075755

  A long deposition crucible (hereinafter simply referred to as a crucible) made of a container having a shape that is long in one direction tends to cool both ends in the longitudinal direction, and the temperature at the center tends to increase. This is because heat energy is injected from both sides into the central part in the longitudinal direction of the crucible, whereas heat energy is injected from one side at the end in the longitudinal direction of the crucible, and heat is released by radiation on the other side. This is because. Accordingly, when the temperature distribution of the crucible becomes non-uniform, the discharge amount of the vapor deposition material discharged from the long crucible varies depending on the location, which causes a problem that uniform film formation becomes difficult.

  On the other hand, the following two types of methods are conceivable as a method for making the film thickness distribution of the evaporation source uniform.

  First, as described in Patent Document 1, the first method is to partially release the heat of the crucible to the outside of the evaporation source, thereby reducing the temperature unevenness of the long crucible. It is conceivable to make the evaporation amount of the vapor deposition material uniform.

  As a second method, as described in Patent Document 2 mentioned above, a technique for making the temperature of the crucible uniform by enhancing the heat generation of the heat source of the heating means for the portion that easily radiates heat is proposed. Has been.

  In order to make the temperature of a long crucible uniform, when the first method is applied, a method of releasing heat from a portion that tends to be relatively high, that is, a central portion in the longitudinal direction of the crucible, can be considered. However, in this method, a part of the heat energy by the heating means is always released to the outside, so that the energy loss is large. In addition, it is necessary to optimize the shape and number of members for releasing heat to the outside by trial production, and in the case of newly developing, it is difficult to put it into practical use in a short time.

  On the other hand, in the second method, it is conceivable to adjust the intensity of partial heat generation of the heat source of the heating means by changing the density of the heater, but in this case, the prototype of the heater is repeated several times to obtain an appropriate value. It is necessary to make a heater. This method requires cost and time to manufacture the heater, so that it is difficult to put it into practical use in a short time when newly developing.

  Other problems and novel features will become apparent from the description of the specification and the accompanying drawings.

  Of the embodiments disclosed in the present application, the outline of typical ones will be briefly described as follows.

  A vapor deposition apparatus according to an embodiment includes a crucible having a plurality of openings extending in a first direction and opened in parallel in the first direction on an upper surface, and a heater that is disposed outside the crucible and heats the crucible The reflective surface of the inclined reflecting plate provided along the surface extending in the first direction of the crucible is disposed toward the end of the crucible in the first direction on the outside of the crucible. To do.

  According to one embodiment disclosed in the present application, it is possible to improve the reliability and mass productivity of the vapor deposition apparatus while reducing energy loss in the vapor deposition process.

It is sectional drawing which shows the vapor deposition apparatus which is Embodiment 1 of this invention. It is a top view which shows the vapor deposition apparatus which is Embodiment 1 of this invention. It is sectional drawing which shows the element formed with the vapor deposition apparatus which is Embodiment 1 of this invention. It is principal part sectional drawing which shows the vapor deposition apparatus which is Embodiment 1 of this invention. It is a principal part top view which shows the vapor deposition apparatus which is Embodiment 1 of this invention. It is principal part sectional drawing which shows the modification of the vapor deposition apparatus which is Embodiment 1 of this invention. It is a principal part top view which shows the vapor deposition apparatus which is Embodiment 2 of this invention. It is a principal part top view which shows the vapor deposition apparatus which is Embodiment 3 of this invention. It is principal part sectional drawing which shows the vapor deposition apparatus which is Embodiment 3 of this invention. It is sectional drawing which shows the vapor deposition apparatus which is a comparative example.

  Hereinafter, embodiments will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description thereof will be omitted. In the following embodiments, the description of the same or similar parts will not be repeated in principle unless particularly necessary.

(Embodiment 1)
The vapor deposition apparatus of the present embodiment has a long crucible extending in one direction, realizes a structure that does not cause variations in the temperature in the crucible with good reproducibility, and has a low power loss. An evaporation source heating structure is provided.

  Below, the vapor deposition apparatus of this Embodiment is demonstrated using FIGS. FIG. 1 is a cross-sectional view showing the vapor deposition apparatus of the present embodiment. FIG. 2 is a plan view of the vapor deposition apparatus of the present embodiment, FIG. 3 is a cross-sectional view showing elements formed by the vapor deposition apparatus of the present embodiment, and FIG. 4 is a diagram of the vapor deposition apparatus of the present embodiment. It is principal part sectional drawing, FIG. 5: is a principal part top view of the vapor deposition apparatus of this Embodiment. The vapor deposition apparatus of this embodiment is an apparatus that can be used in any process for forming a film by a vapor deposition method, such as a process for manufacturing a semiconductor device. Here, a case of manufacturing an organic EL light emitter will be described as an example.

First, FIG. 1 shows an evaporation source 4 having the characteristics of the present embodiment and a vacuum evaporation apparatus 1 including the evaporation source 4. As shown in FIG. 1, the vacuum deposition apparatus 1 has a vacuum chamber 2 formed of a sealable enclosure. The vacuum chamber 2 includes a vacuum pump 3 for evacuating the inside of the vacuum chamber 2 and a valve 7. Connected through. That is, the vacuum chamber 2 is a sealed container. By performing the evacuation, the pressure in the vacuum chamber 2 is maintained at a vacuum degree of 10 ⁻³ to 10 ⁻⁶ Pa.

  Although only one exhaust device connected to the vacuum chamber 2 is shown here, it is actually possible to connect a plurality of pumps to the vacuum chamber 2 and switch them to realize a high vacuum step by step. Conceivable. For example, a roughing dry pump that is first used in the vacuuming step and a turbo molecular pump or a cryopump that is used to realize a high vacuum are connected to the vacuum chamber 2. A vacuum pump 3 shown in FIG. 1 collectively shows these vacuum pumps for simplification of the drawing.

  In FIG. 1, a part of the crucible 22 is shown by being broken, and another part of the side surface and the heater 23 adjacent to the side surface are shown. In other words, the crucible 22 is shown with a partial side view and another partial cross-sectional view. The vacuum pump 3, the valve 7 and the rate sensor 26 are shown schematically. Further, for easy understanding of the drawing, the cross section of the inclined reflection plate 41 is not hatched.

  The wall surface of the vacuum chamber 2 is provided with an opening that connects the inside and the outside, and the opening is sealed by a gate valve 6. By opening and closing the gate valve 6 by moving it, the inside of the vacuum chamber 2 and the inside of the transfer chamber 2b (see FIG. 2) adjacent to the vacuum chamber 2 are connected, and the substrate 5 is taken in and out between these chambers. be able to.

  An evaporation source 4 and a substrate 5 are disposed inside the vacuum chamber 2. The substrate 5 is an object for forming a vapor deposition film, and is carried out of the vacuum chamber 2 after performing the vapor deposition process. The substrate 5 is arranged so that the surface on which the film is formed by the vapor deposition process faces downward, that is, toward the evaporation source 4 side. Although not shown in the drawing, the substrate 5 has, for example, a peripheral portion thereof held, and the bottom surface of the substrate 5 in the unheld region is exposed downward.

  The evaporation source 4 discharges the vapor generated by heating the vapor deposition material 21 inside the evaporation source 4 from the opening 34 in the upper part of the evaporation source, that is, from the nozzle to the outside of the evaporation source 4 and sprays it on an object such as the substrate 5. Used for. When detecting the deposition rate on the substrate 5, a rate sensor 26 is used that detects the deposition material by attaching it to the quartz crystal resonator.

  In this embodiment, since the diagonal length corresponds to the substrate 5 of 1 meter, the evaporation source 4 that is long in one direction, that is, the linear evaporation source is used. Therefore, either the substrate 5 or the evaporation source 4 is a direction perpendicular to the longitudinal direction of the evaporation source 4 and a direction along the surface of the substrate 5 facing the surface having the opening 34 of the evaporation source 4; That is, film formation is performed by moving the paper toward the front or back in FIG. Hereinafter, the direction in which the substrate 5 or the evaporation source 4 is scanned and is orthogonal to the first direction is referred to as a second direction.

  In the vapor deposition step, a method of forming a film by spraying vaporized vapor deposition material from an evaporation source fixed in the chamber, that is, a point source, to the substrate while rotating the substrate can be considered. However, in this case, when the substrate becomes large, the deposition chamber becomes enormous in order to realize a substrate rotation mechanism and secure the distance between the evaporation source and the substrate, which is not practical. Thus, in the present embodiment, deposition is performed while scanning at least one of the substrate 5 and the elongate evaporation source 4 to enable film formation on a large substrate.

  Here, a case where the evaporation source 4 extending in the first direction is scanned in the second direction orthogonal to the first direction while the substrate 5 is fixed will be described. That is, the substrate 5 and the evaporation source 4 are arranged so as to face each other, and the evaporation source 4 is scanned in a direction along the surface of the substrate 5 facing the evaporation source 4 and perpendicular to the longitudinal direction of the evaporation source 4. While performing the vapor deposition process.

  Here, the case where the surface on which the film of the substrate 5 is formed is arranged downward and the evaporation source 4 extending in the horizontal direction is scanned in the horizontal direction will be described. However, vapor deposition is performed using an apparatus in which these configurations are inclined by 90 °. You may perform a process. That is, the deposition process may be performed while the substrate 5 is placed upright so that the normal direction of the substrate 5 is along the horizontal direction and the evaporation source 4 is scanned in the vertical direction or the horizontal direction. Alternatively, the evaporation source 4 may be fixed and the substrate 5 may be scanned in the vertical direction or the horizontal direction.

  When scanning the substrate 5 or the evaporation source 4 in the vertical direction, the longitudinal direction of the evaporation source 4 is along the horizontal direction. When the substrate 5 or the evaporation source 4 is scanned in the horizontal direction, that is, in the horizontal direction, the longitudinal direction of the evaporation source 4 is along the vertical direction. As described above, the direction in which the substrate 5 and the evaporation source 4 are arranged can be changed as appropriate. That is, the direction in which the vapor is released from the evaporation source 4 and the posture of the substrate 5 that is the deposition target may be changed to a direction different from the mode shown in FIG.

  The evaporation source 4, which is a linear evaporation source having an opening 34 upward, has a housing 27 that is a container that surrounds a side surface and a bottom surface, and a long crucible 22 in which a vapor deposition material 21 is enclosed. Is arranged. The housing 27 and the crucible 22 extend in the first direction along the horizontal direction. The crucible 22 and the vapor deposition material 21 in the crucible 22 are heated by the heater 23 which is the first heating means disposed outside the crucible 22 and inside the housing 27.

  The heater 23 is made of, for example, a filament that can control the amount of heat generated by voltage, and is disposed adjacent to the side surface extending in the first direction outside the crucible 22, for example.

  The heater 23 extends in the first direction while meandering, and has a plurality of longitudinally extending portions extending in the longitudinal direction perpendicular to the first direction along the side surface of the crucible 22. The longitudinally extending portions that constitute the heater 23 and are adjacent to each other in the first direction are connected to each other at one end in the longitudinal direction by a folded portion that constitutes the heater 23. That is, the heater 23 has a meandering structure in which a plurality of folded portions and a plurality of longitudinally extending portions are connected in series.

  Thus, the crucible 22 can be heated evenly by arranging the linear heater 23 to meander and cover the side surface of the crucible 22. In the above description, the structure in which the filament is meandered is shown, but a heater having a plate-like heating element may be used.

A plurality of openings 34 are arranged in the first direction on the upper surface of the crucible 22, which is a box-shaped container, that is, the first surface. When the vapor deposition material 21 heated by the heater 23 is vaporized, the gas of the vapor deposition material 21 is released from the opening 34 toward the substrate 5. The pressure in the crucible 22 is several Pa. On the other hand, since the inside of the vacuum chamber 2 outside the crucible 22 is in a high vacuum state of 10 ⁻³ to 10 ⁻⁶ Pa, the vaporized vapor deposition material 21 does not slowly diffuse out of the crucible 22. Instead, it is emitted so as to jump out from the opening 34 toward the substrate 5. At this time, since a plurality of openings 34 are arranged side by side in the first direction, the vaporized gas of the vapor deposition material 21 is released in a strip shape along the first direction.

  For the vapor deposition material 21, a material that evaporates and vaporizes after being heated by the heater 23, or a material that does not change from a solid to a liquid even when heated and vaporizes by sublimation is used. it can.

  As shown in FIG. 1, the openings 34 may be formed as one or a plurality of slit-like openings extending in the first direction without being scattered in the first direction.

  Here, an example in which a plurality of openings 34, that is, nozzles are arranged in a line has been described. On the other hand, a plurality of openings 34 may be arranged in the first direction on the upper surface of the crucible 22, and a plurality of opening patterns similar to those of the openings 34 may be arranged in a second direction orthogonal to the first direction. Good.

  The vapor deposition apparatus including the evaporation source 4 is used in a process of forming a part of the film constituting the organic EL display device shown in FIG. Here, FIG. 3 shows a cross-sectional view of an organic EL display device which is an element formed by the vapor deposition apparatus of the present embodiment. The structure shown in FIG. 3 is a cross section of one pixel of the organic EL display device. The organic EL display device has a plurality of pixels arranged in a matrix.

  As shown in FIG. 3, the organic EL display device is formed on a substrate 5 which is a glass substrate, for example. For example, a plurality of thin film transistors (TFTs) 9 are formed on the substrate 5. An anode 11 that is a pixel electrode is formed on the insulating film 18 that covers the thin film transistor 9 and has a flat upper surface. The anode 11 is connected to the thin film transistor 9 through a plug that penetrates the insulating film 18. A pixel isolation bank 19 made of an insulating film is formed on the insulating film 18 and the anode 11, and the pixel isolation bank 19 exposes a part of the upper surface of the anode 11.

  The organic EL (electroluminescence) light-emitting element 10 includes an anode 11, a hole injection layer 12, a hole transport layer 13, a color-specific light-emitting layer 14 a, a light-emitting layer 14, an electron transport layer 15, and electrons stacked in order on the substrate 5. It has a laminated film composed of an injection layer 16 and a cathode 17. The organic EL light emitting element 10 is an element that emits light by passing a current between the anode 11 and the cathode 17. For example, when the light-emitting layer 14 emits white light, the color-specific light-emitting layer 14a is formed to separate the colors of adjacent adjacent pixels.

  As will be described later, depending on the color emitted by the light emitting layer 14, the color-specific light emitting layer may not be formed. The organic EL light emitting element 10 is an optical element in which the light emitting layer 14 emits light by supplying holes from the anode 11 side to the light emitting layer 14 side and supplying electrons from the cathode 17 to the light emitting layer 14 side. The light emitted from the light emitting layer 14 passes through, for example, the anode 11 and is emitted to the substrate 5 side.

  Next, the vapor deposition process using the vapor deposition apparatus of this Embodiment is demonstrated using FIG.1, FIG.2 and FIG.3. FIG. 2 is a schematic view in a plan view of the multi-chamber 100 which is a vacuum vapor deposition line constituting the vapor deposition apparatus of the present embodiment.

  When forming the organic EL light emitting device 10, first, the substrate 5 shown in FIG. 3 is prepared, the thin film transistor 9 is formed on the main surface thereof, the insulating film 18 is formed, and then the upper surface of the insulating film 18 is polished. And flatten. Thereafter, after forming a contact hole penetrating the insulating film 18, the anode 11 and the pixel separation bank 19 are formed in order. The pixel isolation bank 19 is an insulating film that is formed so as to cover the anode 11 and then exposes a part of the upper surface of the anode 11 by opening a part thereof. The pixel separation bank 19 is formed in a film shape on the insulating film 18, and the side surface of the opening of the anode 11 has a taper so as to spread from the anode 11 side to the cathode 17 side. The thin film transistor 9, the insulating film 18, the anode 11, and the pixel separation bank 19 on the substrate 5 are formed without using a vapor deposition method.

  In the subsequent steps, as will be described below, the multi-chamber 100 shown in FIG. 2 and each film forming chamber 2c constituting the multi-chamber 100, that is, the vacuum vapor deposition apparatus 1 shown in FIG. Do the membrane.

  First, before the substrate 5 on which the anode 11 (see FIG. 3) has been formed through the above steps is transferred into the multi-chamber 100 (see FIG. 2), the substrate 5 is washed with pure water or the like, and then a drying step. I do. Thereafter, the substrate 5 is subjected to plasma cleaning or UV ozone cleaning to modify the surface of the substrate 5 and remove organic residues.

  Next, one substrate 5 is placed in the load lock chamber 2a corresponding to the entrance of the substrate vacuum deposition line shown in FIG. In addition, the board | substrate 5 shall be a glass substrate and has a rectangular shape in planar view here. As shown in FIG. 2, the multi-chamber 100 has a structure in which, for example, three transfer chambers 2b are connected in series via a load lock chamber 2a that is a preparation room, that is, a standby room. A plurality of film forming chambers 2c are connected to the side surface. The transfer chamber 2b has a polygonal shape in plan view.

  Between the transfer chamber 2b and the load lock chamber 2a or the film formation chamber 2c adjacent to the transfer chamber 2b, a gate valve for isolating the atmosphere between the transfer chamber 2b and the load lock chamber 2a or the film formation chamber 2c by opening and closing. 6 is interposed. Each of the chambers can be sealed by the gate valve 6. Each gate valve 6 is opened when the substrate 5 is transported between chambers arranged with the gate valve 6 interposed therebetween, and is closed at other times.

  In the stacking process of the plurality of vapor deposition films on the substrate 5, the substrate 5 is transported in order in the multi-chamber 100, for example, from the upper side to the lower side in FIG. 2, and the vapor deposition films are formed in the plurality of film deposition chambers 2c therebetween. Is done. At this time, it is preferable that the inside of the transfer chamber 2b, the film forming chamber 2c, and the load lock chamber 2a between the adjacent transfer chambers 2b are always in a vacuum state. This is for preventing contamination of the surface of the substrate 5 with foreign matter that causes light emission failure, or contamination of the film surface that causes a reduction in device life by carrying it in a vacuum state. This is to improve the throughput by omitting the process of exhausting the gas in each chamber every time the substrate is loaded into the chamber.

  In order to keep the vacuum state in the transfer chamber 2b, when the substrate 5 is carried into the multi-chamber 100, first, the substrate 5 is put on standby in the load lock chamber 2a separated from the transfer chamber 2b by the gate valve 6. . Thereafter, the sealed load lock chamber 2a is evacuated. As a result, the substrate 5 is carried into the transfer chamber 2b after the inside of the load lock chamber 2a is brought into a vacuum state similar to that in the adjacent transfer chamber 2b. By doing in this way, it can prevent that the atmospheric | air pressure in the conveyance chamber 2b increases, and a foreign material penetrate | invades in the conveyance chamber 2b.

  Here, it is assumed that the substrate 5 performs a plurality of vapor deposition steps while moving sequentially from the upper side to the lower side in FIG. That is, the substrate 5 is first carried into the load lock chamber 2a shown at the top of FIG. 2, and finally carried out from the load lock chamber 2a shown at the bottom of FIG. 2 to another apparatus. The transfer of the substrate 5 between the transfer chamber 2b and the load lock chamber 2a and between the transfer chamber 2b and the film formation chamber 2c is performed by a transfer robot arm 8 disposed in the transfer chamber 2b.

  For example, the robot arm 8 is used to take out the processed substrate 5 and put the unprocessed substrate 5 into the film forming chamber 2c. In FIG. 2, one robot arm 8 is shown in each transfer chamber 2b, but two or more robot arms 8 may be arranged in each transfer chamber 2b. In FIG. 2, a part of the robot arm 8 holding the substrate 5 and shielded by the substrate 5 is shown in a transparent manner.

  If there are a plurality of robot arms 8 in the transfer chamber 2b, a plurality of substrates 5 are processed simultaneously using one transfer chamber 2b and a film formation chamber 2c connected to the side surface of the transfer chamber 2b to form a deposited film. Can be formed. Therefore, the manufacturing efficiency of the organic EL light emitter can be increased. When the substrates 5 are processed in parallel as described above, the plurality of film forming chambers 2c adjacent to the respective transfer chambers 2b are used to form a film forming chamber 2c that performs the same process, that is, the same film. It is conceivable to provide two or more film forming chambers 2c.

  That is, for example, two film forming chambers 2c for forming the light emitting layer 14 (see FIG. 3) may be connected to one transfer chamber 2b. As a result, the two substrates 5 can be processed in parallel. In particular, the production efficiency can be improved by providing a plurality of film formation chambers 2c for forming a film that takes a long time to form a film by vapor deposition. When the substrates 5 are processed one by one for one transfer chamber 2b and the film formation chamber 2c connected thereto without performing parallel processing as described above, the film formation chambers connected to the respective transfer chambers 2b. As for 2c, it is not necessary to provide a plurality of film forming chambers 2c used in the same process. That is, the film forming chambers 2c connected to the respective transfer chambers 2b can be chambers that are used for forming another film.

  Next, the substrate 5 is transferred from the transfer chamber 2b into the film forming chamber 2c by the robot arm 8, and the gate valve 6 of the film forming chamber 2c is closed to perform the vapor deposition process. In the vapor deposition step, as described above with reference to FIG. 1, the vapor deposition material 21 in the crucible 22 constituting the evaporation source 4 is heated and vaporized by the heater 23 via the crucible 22, and is formed on the substrate 5 from the opening 34. A vapor deposition film is formed by flying particles of the vapor deposition material 21 toward the surface. At this time, the vapor deposition film is formed with uniform film quality and film thickness by performing film formation while scanning the evaporation source 4 along the vapor deposition target surface of the substrate 5. In the vapor deposition step, film formation is performed by spraying the vapor deposition material 21 while the evaporation source 4 reciprocates, for example, once or twice from the end of the substrate 5 to one end in plan view.

  As will be described later, in this application, the crucible 22 is directly heated from the heater 23, and the radiant heat from the heater 23 or the crucible 22 is reflected by the inclined reflecting plate 41, which is the second heating means, and the heat rays reflected thereby. That is, heating is also performed by irradiating the longitudinal end of the crucible 22 with infrared rays.

  The substrate 5 having the vapor deposition film formed on the surface as described above is carried into the transfer chamber 2b by the robot arm 8 shown in FIG. 2, and a film forming process is performed in the next film forming chamber 2c. The substrate 5 thus subjected to the vapor deposition process in one or a plurality of film forming chambers 2c is transferred to the next transfer chamber 2b through the load lock chamber 2a, and thereafter the same film forming process is performed.

  Next, a procedure for forming a vapor deposition film constituting the organic EL light-emitting element 10 by the vapor deposition film stacking process in the plurality of film formation chambers 2c will be described with reference to FIG.

  Here, first, the electron injection layer 16 from the hole injection layer 12 is formed on the anode 11 shown in FIG. The hole injection layer 12, the hole transport layer 13, the color-specific light emitting layer 14 a, the light emitting layer 14, the electron transport layer 15, and the electron injection layer 16 are formed by depositing each film made of an organic compound or an inorganic compound by a vacuum deposition method. The film is formed by Thereby, a laminated structure is formed on the anode 11. Thereafter, a metal film such as magnesium (Mg), silver (Ag), or aluminum (Al) is formed on the electron injection layer 16 by a vacuum deposition method, and a cathode 17 made of the metal film is provided. That is, the cathode 17 is made of an alloy mainly containing, for example, magnesium (Mg) and further containing silver (Ag).

  In the separate application of the vapor deposition film in units of pixels for improving the light emission efficiency, for example, the substrate 5 is covered with a shadow mask having an opening corresponding to a specific pixel electrode, that is, a specific anode 11 in the vapor deposition process. As a result, the shadow mask is brought into close contact with the surface of the substrate 5, and the vapor-deposited film is formed on the surface of the substrate 5 exposed from the shadow mask, thereby forming the color-specific light emitting layer 14 a. When aligning the shadow mask and the substrate 5, the positional error is set to 5 μm or less. When the light emitting layer 14 emits white light or blue light, a color filter or a color conversion filter may be formed on the insulating film of the substrate 5 or the sealing glass substrate 20.

  As described above, the organic EL light-emitting element 10 is formed by forming the deposited film one by one in each of the plurality of film forming chambers 2c shown in FIG. In addition, if the array circuit is formed by the thin film transistor 9 on the substrate 5 before the formation of the organic EL light emitting element 10 and is connected to each anode 11 of the organic EL light emitting element 10, a display that is clear and compatible with high-speed response is manufactured. Is possible.

  From the loading of the substrate 5 into the multi-chamber 100 described with reference to FIG. 2 to the formation of the cathode 17 (see FIG. 3), all processes including the transfer process are performed under vacuum, and the substrate 5 is brought into the atmosphere. Avoid touching. The substrate 5 on which the organic EL light emitting element 10 is formed is transferred from the last transfer chamber 2b shown at the bottom of FIG. 2 through the load lock chamber 2a shown adjacently below the transfer chamber 2b. It is transported into another device (not shown) connected to the outside. In the other apparatus, the sealing glass substrate 20 shown in FIG. 3 is attached in a vacuum or a nitrogen gas atmosphere so that the element does not come into contact with air.

  Thereafter, the substrate 5 is separated into pieces by dicing or the like, and the organic EL light emitter of the present embodiment that can be used as a panel of a display device is completed.

  Next, the evaporation source 4 having the characteristics of the present application will be described with reference to FIGS. 4, 5, and 6. 4 is a cross-sectional view of the main part of the vapor deposition apparatus of the present embodiment, FIG. 5 is a plan view of the main part of the vapor deposition apparatus of the present embodiment, and FIG. 6 is a vapor deposition apparatus that is a modification of the present embodiment. FIG.

  FIG. 4 shows a cross-sectional view of a main part of the vapor deposition apparatus of the present embodiment. FIG. 4 shows details of the internal structure of the evaporation source 4. In the evaporation source 4, a crucible 22 having a plurality of openings 34 that are vapor ejection holes and enclosing the vapor deposition material 21 is disposed. A heater 23 that is a first heating means for heating the crucible 22 is provided inside the evaporation source 4. The heater 23 generates heat by energizing the heater 23 and heats the crucible 22 and the vapor deposition material 21. 4 and 6 show a side view of a part of the crucible 22 and a sectional view of another part of the crucible 22 as in FIG. 1, and the cross section of the inclined reflector 41 is not hatched.

  In order to improve the heating efficiency, a plurality of heat insulating plates 40 as heat insulating means are provided inside the evaporation source 4 so as to surround the crucible 22 and the heater 23. Specifically, each heat insulating plate 40 is disposed along each of the side surface and the bottom surface of the crucible 22 having a rectangular shape extending in the first direction in plan view. That is, by disposing the heat insulating plate 40 between each surface except the upper surface of the crucible 22 and the housing 27, the heat generated by the heater 23 is prevented from being radiated to the outside of the housing 27. It is possible to improve the heating efficiency of the crucible 22.

  Although the resistance heating method is shown in the example shown in FIG. 4, any method such as a resistance heating method or a lamp method may be used as the heating means. In the heater 23 of FIG. 4, the heating element is meandered at a constant pitch so as to make the temperature in the longitudinal direction of the crucible 22 uniform during heating. However, as will be described later, since the end portion in the longitudinal direction of the crucible 22 is relatively easy to cool, the heaters 23 are densely arranged in a region adjacent to the end portion and are adjacent to the vicinity of the center of the crucible 22 that is relatively difficult to cool. The heaters 23 may be arranged sparsely to make a difference in the amount of heat generated. Such a difference in density between the heaters 23 can be provided, for example, by adjusting the pitch of the meandering heaters 23 in the first direction. Thereby, the heater 23 can heat the crucible 22 equally.

  The heater 23 is not only a side surface extending in the first direction of the crucible 22 but also a side surface of the crucible 22, and a side surface along the second direction that is perpendicular to the first direction and along the upper surface of the crucible 22. It may be arranged adjacent to. The heater 23 may be disposed along the bottom surface of the crucible 22.

  As a material of the heat insulating plate 40, a so-called heat insulating material having low thermal conductivity can be used as shown in FIG. As a modification, as shown in FIG. 6, a reflector 24 in which a plurality of parallel plates are arranged in a non-contact manner may be used as the heat insulating means. Each of the reflectors 24 arranged so as to overlap each other is not in contact with each other. When the reflectors 24 arranged so as to overlap each other are in contact with each other, heat is radiated to the housing 27 side through the reflectors 24 by conduction. It is because it ends. That is, if the reflectors 24 are separated from each other in the vacuum chamber 2 (see FIG. 1) under a high vacuum, the medium for transferring heat between the overlapping reflectors 24 can be reduced, and the heat insulation effect can be improved. Can do.

In order to further improve the heat insulation efficiency of the reflector 24 shown in FIG. 6, it is desirable to polish the surface of the flat plate constituting the reflector 24 to a mirror surface or a smooth surface according to the mirror surface. In order to further increase the heat insulation efficiency, the surface of the flat plate constituting the reflector 24 is made of a metal having a low emissivity such as gold (Au), silver (Ag), aluminum (Al), or copper (Cu). It is desirable that It is conceivable to use quartz (SiO ₂ ), ceramics, stainless steel, molybdenum (Mo), tantalum (Ta), tungsten (W), titanium (Ti), graphite (C), or the like as the flat plate material. However, in order to further increase the heat insulation efficiency, it is desirable to coat the reflector 24 with a metal having a low emissivity such as gold, silver, aluminum or copper on the surface of the flat plate.

  In FIG. 4, a plurality of inclined reflecting plates 41 having a radiant heat reflecting surface are arranged between the bottom surface of the crucible 22 and the heat insulating plate 40. A major feature of the present embodiment is that an inclined reflection plate 41 as a second heating means is provided. Each main surface of the reflector 24 which is a reflecting plate shown in FIG. 6 is disposed in parallel to a surface such as a side surface of the crucible 22 or a heater 23 disposed along the surface. On the other hand, the inclined reflecting plate 41 is disposed at an angle inclined with respect to the heater meandering along the side surface, the bottom surface, or the surface of the crucible 22.

  That is, the inclined reflecting plate 41 is composed of a plate-like structure disposed along the outer side surface or bottom surface of the crucible 22. The inclined reflecting plate 41 is disposed to be inclined with respect to the outer side surface or bottom surface of the crucible 22, that is, the second surface, and one surface of the inclined reflecting plate 41 is at one end in the first direction of the crucible 22. It is arranged to face.

  Here, the reflective surface of each inclined reflecting plate 41, that is, the third surface is the end of the crucible 22 in the first direction and is inclined so as to face the end closer to each inclined reflecting plate 41. Yes. That is, among the plurality of inclined reflectors 41 arranged side by side in the first direction, the inclined reflector 41 near the center of the crucible 22 in the first direction is inclined near the end of the crucible 22 in the same direction. Compared to the reflector 41, the inclination angle with respect to the side surface of the crucible 22 is large. Here, the inclination angle is an angle formed by one surface of the crucible 22, that is, the second surface, and the inclined reflection plate 41 provided along the surface.

  Therefore, the inclination angle of the inclined reflecting plate 41 becomes smaller from the central portion in the first direction to the end portion in the same direction among the plurality of inclined reflecting plates 41 arranged in the first direction. For this reason, the inclined reflector 41 in the vicinity of the end of the crucible 22 in the first direction is disposed at an angle close to or parallel to the second surface, and is near the center of the crucible 22 in the same direction. The tilt angle of the tilted reflector 41 is nearly perpendicular to the second surface. That is, the inclination angle of the inclined reflection plate 41 gradually decreases as it approaches the end from the center of the crucible 22 in the first direction.

  As a result, the heat rays emitted from the crucible 22 or the heater 23 are reflected by the inclined reflector 41, the heat insulating plate 40 or the reflector 24 (see FIG. 6) at a position facing the location where the heat rays are emitted, and the heat rays are reflected. There are more components that are reflected by the inclined reflector 41 and irradiated toward the end in the longitudinal direction of the crucible 22 than the components that return to the emitted location.

  That is, the heat rays emitted from the crucible 22 or the heater 23 are reflected by the opposing surfaces and do not return to the emitted portions, but many of them are reflected by the inclined reflecting plate 41, and the longitudinal direction of the crucible 22 The light is concentrated in the direction of the edge. Accordingly, the heat rays emitted from the crucible 22 or the heater 23 are irradiated more on the end portion of the crucible 22 in the first direction than in the central portion of the crucible 22 extending in the first direction.

  Thus, both ends of the crucible 22 can collect many heat rays with respect to the central portion, and the ends of the crucible 22 can be intensively heated by the heat rays. It can be prevented from lowering. Further, as shown in the plan view of FIG. 5, the plurality of inclined reflecting plates 41 are arranged so as to face both side surfaces extending in the longitudinal direction of the crucible 22. Thereby, not only the radiant heat from the lower part of the crucible 22 shown in FIG. 4 is reflected, but also the end of the crucible 22 is irradiated with radiant heat from the side surface side of the crucible 22, thereby more efficiently The end can be heated.

  5 shows a configuration in which the heater 23 is disposed adjacent to the side surface of the crucible 22 extending in the first direction, the heater 23 extends along the upper surface of the crucible 22 orthogonal to the first direction. It can also be arranged on the side surface of the crucible 22 along the second direction. Further, as shown in FIG. 5, the inclined reflector 41 is disposed away from the crucible 22 and the heater 23, and for example, the heater 23 is disposed in contact with the side surface of the crucible 22.

  Here, FIG. 10 shows a cross-sectional view of a vapor deposition apparatus as a comparative example. 10 has substantially the same structure as the vapor deposition apparatus of the present embodiment shown in FIG. 1, but the comparative example is different from the present embodiment in that the inclined reflector 41 is not provided in the evaporation source 4. And different.

  In the evaporation source 4 shown in FIG. 10, the long crucible 22 made of a container having a shape long in one direction is easily cooled at both ends in the longitudinal direction when there is no inclined reflector 41 (see FIGS. 4 and 1). The central temperature tends to be high. This is because heat energy is injected into the central portion of the first direction, which is the longitudinal direction of the crucible 22, from both sides in the same direction, whereas heat energy is injected from one side at the end of the crucible 22 in the longitudinal direction. This is because heat is released by radiation on the other side. As a result, when the temperature distribution of the crucible 22 becomes non-uniform, the amount of vapor deposition material released from the long crucible 22 varies depending on the location, which causes a problem that uniform film formation becomes difficult.

  Moreover, when the center part of the crucible 22 becomes hotter than an edge part as mentioned above, the vapor deposition material 21 (refer FIG. 4) inside the said center part will be short time compared with the vapor deposition material 21 inside the said edge part. Thus, the vapor deposition material 21 in the crucible 22 is not consumed uniformly. In this case, since the central portion of the vapor deposition material 21 in the crucible 22 disappears before the end, the vapor deposition material 21 in the crucible 22 is replaced with a new one even though the vapor deposition material 21 remains in the crucible 22. Must. Therefore, the exchange cycle of the vapor deposition material 21 is shortened, resulting in an increase in manufacturing cost.

  As one method for solving the above problem, a heat radiator such as a support having high thermal conductivity is brought into contact with the outer wall of the central portion in the longitudinal direction of the long crucible, It is conceivable to use a method of thinning a nearby heat insulating plate. In these methods, the heat at the center of the crucible, which is a region that is likely to become high temperature, is partially released outside the evaporation source, thereby reducing variations in the temperature of the crucible and reducing the evaporation amount of the vapor deposition material in the crucible. Make uniform.

  However, when these methods are used, a part of the heat energy by the heating means is always released to the outside, so that the loss of heat energy and power energy is large. In addition, it is necessary to optimize the shape and number of members for releasing heat to the outside by trial production, and in the case of newly developing, it is difficult to put it into practical use in a short time. Therefore, in the method of partially radiating the crucible, the manufacturing cost of the vapor deposition apparatus increases. As a result, there arises a problem that the manufacturing cost of a semiconductor device or the like formed by film formation by the vapor deposition method increases.

  Further, as another method for solving the problem that the temperature in the crucible varies, it is conceivable to make the temperature of the crucible uniform by strengthening the heat generation of the heat source of the heating means for the part that easily radiates heat. Specifically, it is conceivable to adjust the intensity of partial heat generation of the heat source of the heating means by changing the density of the heater. Thus, even if the crucible 22 is evenly heated by adjusting the density of the heater, the end of the crucible 22 in the first direction is still easily cooled. Therefore, a means for heating the end portion of the crucible 22 more intensively than the central portion is required.

  Furthermore, when providing a difference in density between the heaters, it is necessary to manufacture a proper heater by repeating the prototype of the heater several times. This method requires cost and time to manufacture the heater, so that it is difficult to put it into practical use in a short time when newly developing.

  As described above, for a method that increases energy loss or manufacturing cost, it is necessary to realize a vapor deposition source that is low in heat loss, low in cost, and capable of keeping the temperature in the crucible 22 uniform. Therefore, in the present embodiment, the heat rays emitted from the crucible 22 or the heater 23 shown in FIG. 4 are reflected on the end of the crucible 22 using the inclined reflector 41 and used for heating. Accordingly, since heat is not released to the outside as in the above method, loss of heat energy can be suppressed, consumption of electric power energy can be suppressed, and heating with high energy efficiency can be realized.

  Moreover, when adjusting the temperature of the edge part of the crucible 22, in the vapor deposition apparatus of this Embodiment, the reflective state of the heat ray in the inclination reflecting plate 41 will be adjusted. This temperature adjustment can be performed only by adjusting the angle of each reflecting surface of the inclined reflecting plate 41. Therefore, compared with the above method of adjusting the temperature by replacing the heat radiator or replacing the heater, the temperature of the crucible 22 can be adjusted extremely easily, and the temperature of the crucible 22 can be adjusted at a low cost. Moreover, when mass-producing a vapor deposition apparatus, since it can process and test | inspect by the shape dimension or surface state of the inclined reflector 41, productivity of a vapor deposition apparatus can be improved. Therefore, the mass productivity of the vapor deposition apparatus can be improved.

As for the surface of the inclined reflector 41, it is desirable that the main surface is processed into a mirror surface or a smooth surface similar to the mirror surface as in the reflector 24 shown in FIG. 6, and a low emissivity material is used at least on the surface. It is desirable that That is, for the material of the inclined reflector 41, quartz (SiO ₂ ), ceramics, stainless steel, molybdenum (Mo), tantalum (Ta), tungsten (W), titanium (Ti), graphite (C), or the like is used. Can be considered. However, in order to increase the reflection efficiency, the surface of the inclined reflector 41 is coated with a metal having a low emissivity, such as gold (Au), silver (Ag), aluminum (Al), or copper (Cu), and is mirror-finished. It is desirable to do.

  As described above, the reflector 24 shown in FIG. 6 and the inclined reflector 41 shown in FIG. 4 are made of the same material and the same surface state. That is, it can be said that the inclined reflecting plate 41 is a part of the heat insulating material, similarly to the reflector 24 that is a heat insulating plate.

  By coating the inclined reflection plate 41 as described above, it is possible to prevent the material constituting the inclined reflection plate 41 from being nitrided. Gold and aluminum are particularly preferable as a material for coating the surface of the inclined reflection plate 41 because of its high infrared reflectance.

  Moreover, if the surface of the inclined reflecting plate 41 is mirror-finished, it is possible to prevent the heat rays applied to the inclined reflecting plate 41 from being irregularly reflected. Thereby, the radiant heat from the heater 23 or the crucible 22 can be more efficiently irradiated to the edge part of the crucible 22, and the temperature in the crucible 22 can be equalized easily. In addition, although a plurality of the inclined reflection plates 41 are arranged here, they may be formed in an integrated shape formed of sheet metal. Further, a part of the flat plate may be formed in a louver shape.

  As described above, in the present embodiment, a plurality of inclined reflecting plates 41 are arranged between the heat insulating plate 40 and the crucible 22 in the housing 27 shown in FIG. By reflecting the radiant heat from the heater 23 or the crucible 22 with the inclined reflecting plate 41, the end portion in the longitudinal direction of the crucible 22 whose temperature is likely to be lower than the central portion of the crucible 22 is intensively heated. Can do. That is, more heat rays reflected by the inclined reflector 41 can be applied to the end portion of the crucible 22 whose temperature tends to be lower than the central portion of the crucible 22 which tends to be relatively high in temperature. it can.

  Thereby, it can prevent that the temperature of the vapor deposition material 21 in the crucible 22 becomes non-uniform according to a place. Therefore, the amount of vapor of the vapor deposition material 21 released from the plurality of openings 34 arranged on the upper surface of the crucible 22 extending in the first direction can be made uniform at any location of each opening 34. . Therefore, in the vapor deposition step, film formation with a uniform film thickness can be performed on the substrate 5, and thus the reliability of the vapor deposition apparatus can be improved.

  Here, the heater 23 is disposed between the crucible 22 and the inclined reflector 41 in order to efficiently radiate the radiant heat generated by the heater 23 to the end of the crucible 22 by the inclined reflector 41.

  On the other hand, even if the heater 23 and the crucible 22 are separated from each other and the inclined reflecting plate 41 is disposed between them, the crucible 22 can be heated by the heater 23. Therefore, even in such a case, the inclined reflector 41 reflects the radiant heat from the heated crucible 22, thereby heating the ends of the crucible 22 intensively and making the temperature inside the crucible 22 uniform. It is possible to get.

(Embodiment 2)
In the first embodiment, the configuration that prevents the temperature at the end of the crucible 22 from decreasing by arranging a plurality of the inclined reflecting plates 41 having the reflecting surface shown in FIG. 5 has been described. In this method, the temperature of the crucible 22 can be easily adjusted by adjusting the direction of the inclined reflecting plate 41 in the trial production stage. However, a part of the heat ray reflected by the inclined reflector 41 arranged closer to the center than the end of the crucible 22 is another part of the heat ray that is arranged closer to the end of the crucible 22 than the inclined reflector 41. There are cases where the crucible 22 cannot be reached directly by hitting the back surface of the inclined reflector 41.

  Further, when a plurality of inclined reflectors 41 are facilitated, when the evaporation source 4 is manufactured, a plurality of inclined reflectors 41 are manufactured and prepared, and the inclined reflectors 41 are respectively installed in the housing 27. Becomes complicated.

  Here, the principal part top view of the evaporation source 4 of the vapor deposition apparatus of this Embodiment is shown in FIG. The structure of the vapor deposition apparatus is almost the same as that of the first embodiment, but the structure of the reflector that reflects the heat rays to the end of the long crucible 22 is different from that of the first embodiment.

  As shown in FIG. 7, here, a plurality of reflecting plates 42 having a curved line axisymmetric with respect to the center of the first direction in which the crucible 22 extends are formed as a plurality of reflectors 42 shown in FIG. 4 of the first embodiment. Instead of the inclined reflector 41, it is arranged. The reflecting plate 42 has, for example, a parabolic curved surface, and in the first direction, which is the direction in which the crucible 22 extends, the center portion is closest to the crucible 22 and the end portion in the same direction is farthest from the crucible 22. It has a different shape.

  Although not shown, the surface of the reflecting plate 42 may not be a curved surface. In this case, it is conceivable that the reflecting plate 42 is a plate having a polygonal structure in which a plurality of planes facing the end portion of the crucible 22 are connected. Even if the reflecting surface of the reflecting plate 42, that is, the third surface is two curved surfaces or a plurality of flat surfaces, the reflecting plate 42 has a shape in which the central portion in the first direction is convex with respect to the surface of the crucible 22. Become.

  That is, the central portion of the reflecting plate 42 in the first direction has an acute shape and protrudes toward the central portion of the crucible 22, and the surface of the reflecting plate 42 and the crucible become closer to the end portion of the reflecting plate 42 in the same direction. The side surfaces of 22 approach parallel. That is, the curved surface of the reflecting plate 42 reflects the heat ray from the surface of the heater 23 or the crucible 22 facing the reflecting plate 42 in a direction perpendicular to the surface, and reflects the heat ray to the reflecting plate 42. It is formed so as to gather at the end of the crucible 22.

  As described above, by arranging the reflecting plate 42 having a left-right symmetric curved surface with the direction orthogonal to the first direction as the axis of symmetry, the same effect as in the first embodiment can be obtained. The heat rays reflected by each part can reach the end of the crucible 22 in the first direction without waste. That is, in the inclined reflecting plate 41 shown in FIG. 5, the heat rays reflected by some of the inclined reflecting plates 41 may hit other inclined reflecting plates 41, and the crucible 22 cannot be efficiently heated. In the form of it can prevent it. This is because only one reflector 42 is disposed on one surface of the crucible 22 so that the heat rays reflected by the reflector 42 can reach the crucible 22 without being blocked by other reflectors. is there.

  The curved surface of the reflecting plate 42 is further designed by calculating and designing the shape so that the heat rays emitted in the normal direction of the side surface along the longitudinal direction of the crucible 22 reach the vicinity of the end of the crucible 22. The heating efficiency at the end can be improved. In FIG. 7, which is a plan view, an example in which the curved reflecting plate 42 is arranged on the side surface of the crucible 22 is shown, but the reflecting plate 42 is arranged on the bottom surface of the crucible 22 as in FIG. 4. However, the same effect can be obtained. That is, the reflecting plate 42 is disposed so as to face at least one of the side surface and the bottom surface of the crucible 22.

  Further, in the present embodiment, the reflecting plate 42 to be arranged is not complicated in shape, and since the number of the reflecting plates 42 is smaller than that in the first embodiment, it can be easily manufactured by a single press work or the like, and the evaporation source The installation in 4 can also be performed simply. Therefore, the manufacturing cost of the vapor deposition apparatus can be reduced, and the mass productivity of the vapor deposition apparatus can be improved.

  The reflector 42 can be formed of the same material as that of the inclined reflector 41 shown in FIG. Further, by processing the surface of the reflecting plate 42 into a mirror surface or a smooth surface according to the mirror surface, or coating the surface with a metal having a low emissivity, the heat rays are reflected more efficiently and the crucible 22 is more efficiently reflected. It becomes possible to heat the edge part of this.

(Embodiment 3)
In the first embodiment, the heater 23 is arranged close to the crucible 22 and the heater 23 and the inclined reflection plate 41 are separated from each other. However, as shown in FIGS. An example in which the heater 23 and the inclined reflector 41 are in contact with each other will be described. FIG. 8 is a plan view of a main part of the vapor deposition apparatus of the present embodiment, and FIG. 9 is a cross-sectional view of the main part of the vapor deposition apparatus of the present embodiment.

  In FIG. 8, a part of the heater 23, that is, the heater 23 in the longitudinal direction extending in the vertical direction along the side surface of the crucible 22 is shown, and the other part of the heater 23, that is, the longitudinal direction extension part. The folded part which connects each other is not shown. 9 is a cross-sectional view taken along line AA in FIG. 8, and unlike FIG. 4, FIG. 9 does not show the crucible and the vapor deposition material in the crucible. However, FIG. 9 shows a side view of only the heater 23 and the inclined reflector 41 in contact with the heater 23. Similarly to FIG. 1, the cross section of the inclined reflector 41 is not hatched.

  The configuration of the vapor deposition apparatus of the present embodiment is almost the same as that of the first embodiment. However, as described below, the arrangement of the heater and the inclined reflector that heats the crucible in the evaporation source is the same as that of the first embodiment. Is different. As shown in FIGS. 8 and 9, the side surface of the crucible 22 and the heater 23 of the present embodiment are separated from each other, and the heater 23 and the inclined reflecting plate 41 are joined. However, since the heater 23 is not disposed on the bottom side of the crucible 22, the inclined reflector 41 is disposed independently. In addition, when the heater is arrange | positioned at the bottom face side of the crucible 22, you may join the said heater and the inclination reflecting plate 41 similarly to the structure shown in FIG.

  The term “joining” as used herein indicates that the inclined reflecting plate 41 and the heater 23 are fixed in contact with each other, and the inclined reflecting plate 41 and the heater 23 may be bonded to each other. The inclined reflector 41 and the heater 23 may be fixed in contact with each other by being held by metal fittings, or may be integrated with each other.

  In the present embodiment, each of the plurality of inclined reflectors 41 arranged side by side in the first direction which is the longitudinal direction of the crucible 22 has a reflective surface at the end of the crucible 22 as in the first embodiment. It is arranged to face. Further, the plurality of inclined reflection plates 41 are disposed between the side surface and the bottom surface and the heat insulating plate 40 so as to be along the side surface and the bottom surface of the crucible 22.

  Here, as shown in FIG. 8, the heater 23 near the center of the crucible 22 in the first direction is not provided with an inclined reflecting plate 41 at an adjacent location. This is because even when the extending length of the crucible 22 extending in the first direction is particularly long, the inclined reflecting plate 41 is provided even if the inclined reflecting plate 41 contacting the heater 23 near the center of the crucible 22 is provided. This is because most of the heat rays emitted from this surface are blocked by the other inclined reflector 41 disposed between the surface and the end of the crucible 22, and the end of the crucible 22 cannot be heated. is there.

  As shown in FIG. 9, the heater 23 extends while meandering in the first direction, and is a direction along the side surface where the crucible 22 extends and extends in the vertical direction perpendicular to the first direction. It has extended portions at multiple locations. Further, the vertically extending portions adjacent to each other in the first direction are connected to each other by a folded portion constituting the heater 23 at one end portion in the longitudinal direction. A plurality of vertically extending portions arranged in the first direction are arranged in contact with each other, except for the vicinity of the central portion of the crucible 22 in the same direction.

  The longitudinal direction is a direction along the second surface facing the inclined reflector 41, that is, the one surface extending in the first direction of the crucible 22, and is a third direction orthogonal to the first direction. . That is, the heater 23 includes a plurality of portions extending in the third direction that are arranged in a row in the first direction.

  The heater 23 is disposed between the side surface extending in the first direction of the crucible 22 and the heat insulating plate 40 facing the side surface, and the inclined reflection plate 41 is connected to the longitudinally extending portion of the heater 23. The heat insulating plate 40 is disposed between the heat insulating plate 40 and the heat insulating plate 40. That is, the longitudinally extending portion of the heater 23 that is in contact with the inclined reflection plate 41 is disposed on the crucible 22 side with respect to the inclined reflection plate 41. This is to prevent the heater 23 from heating the crucible 22 and preventing the inclined reflector 41 from blocking the heater 23.

  However, even if the inclined reflection plate 41 is disposed between the heater 23 and the crucible 22, the crucible 22 can be heated by the heater 23. Therefore, it is possible to obtain the effect of making the temperature in the crucible 22 uniform by intensively heating the end of the crucible 22 by reflecting the radiant heat from the heated crucible 22 by the inclined reflector 41.

  Moreover, since the center part of the crucible 22 is a place where heat energy is easily injected from both ends in the first direction and the temperature tends to become high, if the inclined reflector 41 is provided in the vicinity of the center part, the center part is more It is thought that it becomes easy to become high temperature. Therefore, here, in order to suppress variations in the temperature of the vapor deposition material in the crucible 22, the inclined reflector 41 that contacts the heater 23 in the vicinity of the central portion is not provided.

  The arrangement of the heater 23, the inclined reflector 41, the heat insulating plate 40, and the surface of the crucible 22 as described above is configured when the heater 23 joined to the inclined reflector 41 is disposed on the bottom side of the crucible 22. The same applies. In this case, the extending direction of the longitudinally extending portion constituting the heater 23 is a direction along the bottom surface of the crucible 22 and a second direction orthogonal to the first direction. In FIG. 9, since the case where the heater 23 (see FIG. 8) is not provided on the bottom surface side of the crucible 22 (see FIG. 8) is illustrated, the inclined reflector 41 on the bottom surface side of the crucible 22 is the same as that of the first embodiment. Similarly, the heater 23 is disposed without contact.

  In the present embodiment, since the heater 23 and the inclined reflector 41 are joined in contact with each other, the heater 23 directly heats the inclined reflector 41. For this reason, since the inclined reflecting plate 41 itself becomes a high temperature and functions as a heat radiating plate of the heater 23, it is possible to irradiate heat rays intensively from the surface of the inclined reflecting plate 41 toward the longitudinal end of the crucible 22. . In this case, in addition to the same effects as those of the first embodiment, it is possible to obtain an effect that enables the end of the crucible 22 to be radiated with heat rays more concentratedly than the configuration of the first embodiment. . That is, there is an advantage that the heating effect on the end of the crucible 22 is greater than when the inclined reflector 41 and the heater 23 are separated from each other.

  Although the invention made by the present inventors has been specifically described based on the embodiment, the present invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

  For example, in the above-described embodiment, the case where the organic EL light emitter is formed on the glass substrate has been described. However, the vapor deposition target may be another type of substrate such as a semiconductor substrate, and the vapor deposition film may be formed on an object other than the substrate. The structure described in Embodiments 1 to 3 can also be applied to the vapor deposition apparatus that forms the film.

  In the first embodiment, the case where the reflector 24 is used as the heat insulating means as shown in FIG. 6 has been described. However, this is also applicable to the second and third embodiments.

DESCRIPTION OF SYMBOLS 1 Vacuum evaporation apparatus 2 Vacuum chamber 2a Load lock chamber 2b Transfer chamber 2c Film formation chamber 3 Vacuum pump 4 Evaporation source 5 Substrate 6 Gate valve 7 Valve 8 Robot arm 9 TFT
10 Organic EL Light Emitting Element 11 Anode (Pixel Electrode)
DESCRIPTION OF SYMBOLS 12 Hole injection layer 13 Hole transport layer 14 Light emitting layer 14a Color-specific light emitting layer 15 Electron transport layer 16 Electron injection layer 17 Cathode 18 Insulating film 19 Pixel separation bank 20 Sealing glass substrate 21 Vapor deposition material 22 Crucible 23 Heater 24 Reflector 25 Thermocouple 26 Rate sensor 27 Housing 34 Opening 40 Heat insulation plate 41 Inclined reflector 42 Reflector 100 Multi-chamber (vacuum deposition line)

Claims (14)

A container for holding the vapor deposition material inside and heating the vapor deposition material, the crucible extending in the first direction, having an opening opened on the first surface thereof;
A first heating means disposed outside the crucible for heating the crucible;
The crucible is composed of a plate-like member disposed along the second surface extending in the first direction of the crucible outside the crucible, and the first direction of the crucible with respect to the second surface. A second heating means having a third surface inclined toward one end of
A vapor deposition apparatus. The vapor deposition apparatus according to claim 1, wherein
The radiant heat of the crucible heated by heating the first heating means or the first heating means is reflected by the third surface of the second heating means,
The reflected heat ray of the radiant heat is applied to the end portion of the crucible more than the center portion in the first direction. The vapor deposition apparatus according to claim 1, wherein
The second heating means includes a plurality of reflecting plates, and each of the third surfaces of the plurality of reflecting plates is closer to the reflecting plate among both ends of the crucible in the first direction. A vapor deposition device that is inclined toward the edge. The vapor deposition apparatus according to claim 1, wherein
The first heating unit is a vapor deposition apparatus disposed between the crucible and the second heating unit. The vapor deposition apparatus according to claim 1, wherein
The second heating means is composed of a single plate,
The third surface has a curved surface projecting toward the crucible side at a central portion in the first direction, or a plurality of surfaces having a polygonal structure projecting toward the crucible side at a central portion in the first direction. . The vapor deposition apparatus according to claim 1, wherein
The plate-like member constituting the second heating means reflects radiant heat from the crucible or the first heating means toward an end portion of the crucible in the first direction, and heats the crucible. Vapor deposition equipment. The vapor deposition apparatus according to claim 1, wherein
The said 3rd surface is a vapor deposition apparatus which has a smooth surface according to a mirror surface or a mirror surface. The vapor deposition apparatus according to claim 1, wherein
The said 3rd surface is a vapor deposition apparatus comprised with quartz, a graphite, a metal, or ceramics. The vapor deposition apparatus according to claim 1, wherein
The said 2nd heating means is a vapor deposition apparatus which is a part of heat insulating material arrange | positioned on the outer side of the said crucible. The vapor deposition apparatus according to claim 1, wherein
A vapor deposition apparatus in which the first heating means and the second heating means are joined. The vapor deposition apparatus according to claim 10.
The first heating means has a plurality of extending portions arranged in the first direction in a direction orthogonal to the first direction and extending in a second direction along the second surface,
The vapor deposition apparatus, wherein the second heating means is joined to the plurality of extending portions. The vapor deposition apparatus according to claim 11, wherein
Of the plurality of extending portions constituting the first heating means,
The vapor deposition apparatus, wherein the second heating means is not joined to the extended portion in the vicinity of the central portion of the crucible in the first direction. The vapor deposition apparatus according to claim 1, wherein
The first heating unit is a vapor deposition apparatus that heats the crucible evenly in any region in the first direction. The vapor deposition apparatus according to claim 1, wherein
The said opening part is a vapor deposition apparatus opened in multiple numbers along with the said 1st direction in the said 1st surface.

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