JP2014109050A - Evaporation source for vapor deposition apparatus - Google Patents

Evaporation source for vapor deposition apparatus Download PDF

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JP2014109050A
JP2014109050A JP2012263475A JP2012263475A JP2014109050A JP 2014109050 A JP2014109050 A JP 2014109050A JP 2012263475 A JP2012263475 A JP 2012263475A JP 2012263475 A JP2012263475 A JP 2012263475A JP 2014109050 A JP2014109050 A JP 2014109050A
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vapor deposition
evaporation source
reflecting plate
crucible
heat reflecting
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Nobuhiro Ito
宜弘 伊藤
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Panasonic Corp
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Panasonic Corp
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PROBLEM TO BE SOLVED: To provide an evaporation source for vapor deposition apparatuses which enables preventing deficiencies due to adhesion of an evaporated vapor deposition material to a heat reflection plate.SOLUTION: An evaporation source 1 for vapor deposition apparatuses comprises a cylindrical crucible 4 containing a vapor deposition material 2, heaters 5a and 5b heating the vapor deposition material 2 to a temperature evaporating the vapor deposition material 2 and a body part 6 housing the crucible 4 and the heaters 5a and 5b. The crucible 4 includes a bottom part 4a in which the vapor deposition material 2 is arranged, an opening part 4b formed so as to be face the bottom part 4a, a side wall 4c connecting the bottom part 4a to the opening part 4b and a constricted part 4d formed in the side wall 4c in the vicinity of the opening part 4b. There is also provided with a heat reflection plate 7a arranged in the side surface of the constricted part 4d in such a way as to be separated from the opening part 4b and having a hole part 7b of an aperture smaller than the largest diameter Lof the constricted part 4d. The configuration prevents deficiencies due to adhesion of the evaporated vapor deposition material 2 to the heat reflection plate 7a in the evaporation source 1 for vapor deposition apparatuses.

Description

本発明は、有機EL(Electro Luminescence)発光素子用の金属膜などを蒸着により形成するための蒸着装置用蒸発源に関する。   The present invention relates to an evaporation source for an evaporation apparatus for forming a metal film for an organic EL (Electro Luminescence) light emitting element by evaporation.

近年、薄型で、輝度や視野角の良い有機EL発光素子を光源とした有機ELパネルが注目を浴びている。この有機ELパネルは、定電流電源からの直流電圧を陽極及び陰極間に印加することによって、発光層に含まれる有機化合物の励起子を発生させ、この励起子が基底状態に戻るときに放射される光を外部に取り出すものである。   In recent years, an organic EL panel using an organic EL light-emitting element that is thin and has a good luminance and viewing angle as a light source has attracted attention. This organic EL panel generates excitons of organic compounds contained in the light emitting layer by applying a DC voltage from a constant current power source between the anode and the cathode, and is emitted when the excitons return to the ground state. Light to be extracted outside.

基板に有機EL素子の金属電極層などの薄膜を形成させる方法の一つに、抵抗加熱方式による真空蒸着装置がある。この種の蒸着装置の構成の一例を、図7を参照して説明する。   One of the methods for forming a thin film such as a metal electrode layer of an organic EL element on a substrate is a vacuum vapor deposition apparatus using a resistance heating method. An example of the configuration of this type of vapor deposition apparatus will be described with reference to FIG.

蒸着装置は、図7(a)に示すような蒸発源101を真空チャンバ内に備えている。蒸発源101は、蒸着材料102及び坩堝103を内部に収容した本体部104と、熱反射板105aとを備える。坩堝103の外周には、蒸着材料102を気化させるように加熱するヒータ106が設けられる。熱反射板105a及び本体部104は、ヒータ106を加熱した際の坩堝保温性を高める機能と、ヒータ106からの輻射熱が基板107側に拡散することを抑制する機能がある。   The vapor deposition apparatus includes an evaporation source 101 as shown in FIG. The evaporation source 101 includes a main body 104 that houses the vapor deposition material 102 and the crucible 103 therein, and a heat reflecting plate 105a. A heater 106 that heats the vapor deposition material 102 to evaporate is provided on the outer periphery of the crucible 103. The heat reflecting plate 105a and the main body 104 have a function of improving the heat retaining property of the crucible when the heater 106 is heated and a function of suppressing diffusion of radiant heat from the heater 106 to the substrate 107 side.

そして、蒸発源101の作動時においては、真空チャンバ内を減圧させて真空雰囲気とし、ヒータ106により蒸着材料102を加熱気化し基板108の方向へ進み、基板107の一表面側に堆積して薄膜を形成する。   When the evaporation source 101 is in operation, the vacuum chamber is depressurized to form a vacuum atmosphere, the vapor deposition material 102 is heated and vaporized by the heater 106, travels in the direction of the substrate 108, and is deposited on one surface side of the substrate 107. Form.

例えば電極材料のひとつであるAl電極材料を上記に示すような坩堝で蒸発させる際、Alとの反応を防ぐため、坩堝の材質としては金属系の材質ではなく、CやSiCなどのセラミックスを用いる場合がある。しかし、セラミックス坩堝はAlに対して濡れ性が高く、蒸発温度で加熱した際、溶解したAlが坩堝を這い上がり、坩堝から吹きこぼれてしまうようなトラブルが多く発生する(例えば、特許文献1参照)。   For example, when evaporating an Al electrode material, which is one of the electrode materials, in a crucible as shown above, use a ceramic such as C or SiC as the crucible material instead of a metallic material in order to prevent reaction with Al. There is a case. However, the ceramic crucible has high wettability with respect to Al, and when heated at the evaporation temperature, there are many troubles that the dissolved Al scoops up the crucible and spills from the crucible (for example, see Patent Document 1). .

特開2007−327125号公報JP 2007-327125 A

上記従来の蒸発源101においては、基板107への薄膜形成を繰り返していく内に、例えば、縁部104aが加熱により変形し、この変形に伴い熱反射板105aが変形されて坩堝103の開口部と熱反射板105aとの幅が狭くなる現象が生じる。   In the conventional evaporation source 101, while the thin film formation on the substrate 107 is repeated, for example, the edge 104a is deformed by heating, and the heat reflecting plate 105a is deformed along with this deformation, and the opening of the crucible 103 is formed. And the heat reflecting plate 105a are narrowed.

この場合、図7(b)に示すように、坩堝103の開口部と熱反射板105aの間に気化された蒸着材料102(例えばAl材料)が固着し、また、気化された蒸着材料102が熱反射板105aの裏面にまで回り込んで固着する。さらに、シャッターなど他の部材に堆積した蒸着材料102が熱反射板105aに落下し、また、その蒸着材料102が熱反射板105aの裏面側まで回り込むことがある。   In this case, as shown in FIG. 7B, vaporized vapor deposition material 102 (for example, Al material) is fixed between the opening of the crucible 103 and the heat reflecting plate 105a, and the vaporized vapor deposition material 102 is It goes around and adheres to the back surface of the heat reflecting plate 105a. Further, the vapor deposition material 102 deposited on another member such as a shutter may fall on the heat reflection plate 105a, and the vapor deposition material 102 may wrap around to the back side of the heat reflection plate 105a.

この結果、坩堝103の開口部と熱反射板105aとが蒸着材料102で固着され、熱反射板105aを坩堝103から外せなくなる。また、蒸着材料102が熱反射板105aや縁部104aに付着して坩堝103の外部に流出することで蒸発源101の地絡や故障原因となる。さらに、縁部104aが金属部材などで形成されている場合には、付着した蒸着材料102と縁部104aとが化学反応して、腐食生成した縁部104aの金属片がメンテナンス作業の際などにおいて蒸発源101の内部に混入してしまい、蒸発源101の地絡や故障の原因となる場合がある。   As a result, the opening of the crucible 103 and the heat reflecting plate 105 a are fixed by the vapor deposition material 102, and the heat reflecting plate 105 a cannot be removed from the crucible 103. Further, the vapor deposition material 102 adheres to the heat reflecting plate 105a and the edge 104a and flows out of the crucible 103, thereby causing a ground fault or failure of the evaporation source 101. Further, in the case where the edge 104a is formed of a metal member or the like, the deposited vapor deposition material 102 and the edge 104a chemically react with each other, and the metal piece of the edge 104a generated by corrosion is used during maintenance work. In some cases, it may enter the evaporation source 101 and cause a ground fault or failure of the evaporation source 101.

本発明は、以上の課題に鑑みてなされたものであり、気化された蒸着材料が熱反射板に付着することに起因する不具合の発生を防止できるようにした蒸着装置用蒸発源を提供することを目的とする。   The present invention has been made in view of the above problems, and provides an evaporation source for a vapor deposition apparatus capable of preventing the occurrence of problems caused by vaporized vapor deposition material adhering to a heat reflecting plate. With the goal.

上記課題を解決するために、本発明に係る蒸着装置用蒸発源は、蒸着材料を収容する筒形状の坩堝と、前記蒸着材料を気化する温度に加熱するヒータと、前記坩堝及び前記ヒータを内部に収容する本体部と、を備える蒸着装置用蒸発源において、前記坩堝は、前記蒸着材料が配置される底部と、当該底部と対向して形成される開口部と、前記底部及び前記開口部を連接する側壁と、前記開口部近傍の側壁に形成される括れ部とを有し、前記括れ部の側面において前記開口部から離間するように配置されて、前記括れ部の最大径より小さな口径の穴部を有する熱反射板を備えることを特徴とする。   In order to solve the above-described problems, an evaporation source for a vapor deposition apparatus according to the present invention includes a cylindrical crucible for accommodating a vapor deposition material, a heater for heating the vapor deposition material to a temperature for vaporization, and the crucible and the heater inside. A vapor deposition apparatus evaporation source comprising: a crucible, wherein the crucible includes a bottom where the vapor deposition material is disposed, an opening formed opposite to the bottom, and the bottom and the opening. A side wall connected to each other and a constricted portion formed on the side wall in the vicinity of the opening, and arranged at a side surface of the constricted portion so as to be separated from the opening, and having a diameter smaller than a maximum diameter of the constricted portion. A heat reflecting plate having a hole is provided.

また、この蒸着装置用蒸発源の前記熱反射板は、前記括れ部の最小径となる位置よりも前記底部側の位置において、前記括れ部の側面に接するように支持されていることが好ましい。   Moreover, it is preferable that the said heat | fever reflecting plate of the evaporation source for vapor deposition apparatuses is supported so that it may touch the side surface of the said constriction part in the position of the said bottom part rather than the position used as the minimum diameter of the said constriction part.

また、この蒸着装置用蒸発源の前記熱反射板は、前記坩堝と一体に形成されていることが好ましい。   Moreover, it is preferable that the heat reflection plate of the evaporation source for the vapor deposition apparatus is formed integrally with the crucible.

また、この蒸着装置用蒸発源は、前記括れ部の最大径より小さい口径となる穴部を有する追加熱反射板をさらに備え、前記追加熱反射板は、前記熱反射板より前記坩堝の開口部側において、当該熱反射板と離間するように配置されることが好ましい。   In addition, the evaporation source for the vapor deposition apparatus further includes an additional heat reflecting plate having a hole portion having a diameter smaller than the maximum diameter of the constricted portion, and the additional heat reflecting plate has an opening portion of the crucible than the heat reflecting plate. It is preferable to arrange | position so that it may space apart from the said heat | fever reflecting plate on the side.

また、この蒸着装置用蒸発源の前記追加熱反射板は、その穴部が前記坩堝の括れ部の側面と離間するように配置されることが好ましい。   Moreover, it is preferable that the additional heat reflecting plate of the evaporation source for the vapor deposition apparatus is disposed so that the hole portion is separated from the side surface of the constricted portion of the crucible.

また、この蒸着装置用蒸発源の前記追加熱反射板の穴部の口径は、前記熱反射板の穴部の口径よりも大きいことが好ましい。   Moreover, it is preferable that the diameter of the hole of the additional heat reflecting plate of the evaporation source for the vapor deposition apparatus is larger than the diameter of the hole of the heat reflecting plate.

また、この蒸着装置用蒸発源の前記熱反射板は、2以上の小片に分割可能であることが好ましい。   Moreover, it is preferable that the heat reflection plate of the evaporation source for the vapor deposition apparatus can be divided into two or more pieces.

また、この蒸着装置用蒸発源の前記熱反射板は、その穴部から外周に向かって下方に傾斜する傾斜部を有することが好ましい。   Moreover, it is preferable that the said heat | fever reflecting plate of this evaporation source for vapor deposition apparatuses has an inclination part which inclines below toward the outer periphery from the hole part.

また、本発明に係る蒸着装置は、上記いずれかに記載の蒸着装置用蒸発源を備えることを特徴とする。   Moreover, the vapor deposition apparatus which concerns on this invention is provided with the evaporation source for vapor deposition apparatuses in any one of the above.

本発明に係る蒸着装置用蒸発源によれば、坩堝の括れ部の最大径より小さな口径の穴部を有する熱反射板を、当該坩堝の括れ部の側面に配置する。この熱反射板と坩堝の開口部とは離間するように配置されため、気化された蒸着材料が熱反射板と開口部との間に固着したり、坩堝の外部に流れ込むことを適切に防止でき、その結果、蒸着装置用蒸発源における不具合の発生を防止できる。   According to the evaporation source for a vapor deposition apparatus according to the present invention, the heat reflecting plate having a hole portion having a diameter smaller than the maximum diameter of the constricted portion of the crucible is disposed on the side surface of the constricted portion of the crucible. Since the heat reflecting plate and the opening of the crucible are arranged so as to be separated from each other, the vaporized vapor deposition material can be appropriately prevented from adhering between the heat reflecting plate and the opening or flowing into the outside of the crucible. As a result, the occurrence of problems in the evaporation source for the vapor deposition apparatus can be prevented.

本発明の第1の実施形態に係る蒸着装置用蒸発源の断面構成図。The cross-sectional block diagram of the evaporation source for vapor deposition apparatuses which concerns on the 1st Embodiment of this invention. 本発明の第2の実施形態に係る蒸着装置用蒸発源の断面構成図。The cross-sectional block diagram of the evaporation source for vapor deposition apparatuses which concerns on the 2nd Embodiment of this invention. 本発明の第3の実施形態に係る蒸着装置用蒸発源の断面構成図。Sectional block diagram of the evaporation source for vapor deposition apparatuses which concerns on the 3rd Embodiment of this invention. 同上実施形態の第1の変形例に係る蒸着装置用蒸発源の断面構成図。The cross-sectional block diagram of the evaporation source for vapor deposition apparatuses which concerns on the 1st modification of embodiment same as the above. 同上実施形態の第2の変形例に係る蒸着装置用蒸発源の断面構成図。Sectional block diagram of the evaporation source for vapor deposition apparatuses which concerns on the 2nd modification of embodiment same as the above. (a)同上実施形態の第3の変形例に係る蒸着装置用蒸発源に備わる熱反射板の平面図、(b)同上実施形態の第4の変形例に係る蒸着装置用蒸発源に備わる熱反射板の斜視図。(A) The top view of the heat | fever reflecting plate with which the evaporation source for vapor deposition apparatuses which concerns on the 3rd modification of embodiment same as the above, (b) The heat with which the evaporation source for vapor deposition apparatuses which concerns on the 4th modification of embodiment same as the above is provided. The perspective view of a reflecting plate. (a)従来の蒸着装置用蒸発源の断面構成図、(b)同上蒸着装置用蒸発源の作動停止後の断面構成図。(A) The cross-sectional block diagram of the conventional evaporation source for vapor deposition apparatuses, (b) The cross-sectional block diagram after the operation | movement stop of the evaporation source for vapor deposition apparatuses same as the above.

本発明の実施形態に係る蒸着装置用蒸発源について図面を参照して説明する。   An evaporation source for a vapor deposition apparatus according to an embodiment of the present invention will be described with reference to the drawings.

(第1の実施形態)
本発明の第1の実施形態に係る蒸着装置用蒸発源(以下、蒸発源と記載)について、図1を参照して説明する。本実施形態の蒸発源1は、高真空を保つ真空チャンバ内に配置され、熱保護板3と、蒸着材料2を投入するための坩堝4と、ヒータ5a,5bと、本体部6と、熱反射板7aとを備える。真空チャンバには真空ポンプ(図示せず)が接続されており、また基板8を容易に交換できるように所定の搬入及び搬出機構(図示せず)が設けられている。
(First embodiment)
An evaporation source for a vapor deposition apparatus according to a first embodiment of the present invention (hereinafter referred to as an evaporation source) will be described with reference to FIG. The evaporation source 1 of the present embodiment is disposed in a vacuum chamber that maintains a high vacuum, and includes a heat protection plate 3, a crucible 4 for introducing the vapor deposition material 2, heaters 5a and 5b, a main body 6, and heat. And a reflecting plate 7a. A vacuum pump (not shown) is connected to the vacuum chamber, and a predetermined loading / unloading mechanism (not shown) is provided so that the substrate 8 can be easily replaced.

蒸着材料2は、基板8に蒸着させる金属電極材料であり、例えば、有機EL素子においては、反射率の高いAlやAgまたはそれらの合金などが用いられる。   The vapor deposition material 2 is a metal electrode material that is vapor-deposited on the substrate 8. For example, in an organic EL element, Al, Ag, or an alloy thereof having a high reflectance is used.

坩堝4は、その断面が円筒状や角筒上などの筒形状に形成され、ヒータ5a,5bの加熱により気化された蒸着材料2を基板8側へ導流するための流路となる。この坩堝4は、蒸着材料2が配置される底部4aと、基板8側に形成される開口部4bと、底部4aと開口部4bとを連接する側壁4cと、開口部4b近傍の側壁4cに形成される括れ部4dとを有して内部空間4eを形成する。なお、坩堝4は、例えば、窒化Al焼結体より成る構造体により構成されている。また、例えば熱保護板3が坩堝4を図中の上下方向に移動させる機能を有し、開口部4bの水平面から熱反射板7aまでの高低差Hを自由に設定できる機能を有していても良い。   The crucible 4 has a cross section formed in a cylindrical shape such as a cylinder or a rectangular tube, and serves as a flow path for introducing the vapor deposition material 2 vaporized by the heating of the heaters 5a and 5b to the substrate 8 side. The crucible 4 includes a bottom 4a on which the vapor deposition material 2 is disposed, an opening 4b formed on the substrate 8 side, a side wall 4c connecting the bottom 4a and the opening 4b, and a side wall 4c in the vicinity of the opening 4b. An internal space 4e is formed with the constricted portion 4d formed. In addition, the crucible 4 is comprised by the structure which consists of an aluminum nitride sintered compact, for example. Further, for example, the heat protection plate 3 has a function of moving the crucible 4 in the vertical direction in the drawing, and has a function of freely setting the height difference H from the horizontal surface of the opening 4b to the heat reflection plate 7a. Also good.

ヒータ5a,5bは、坩堝4の側壁4cの外部に設けられ、ヒータ5aは坩堝中心部から下部全体を、ヒータ5bは坩堝中心部から上部全体を蒸着材料2が気化する温度以上で且つ十分な成膜温度が確保できる温度(例えば、1100〜1400℃程度)にまで加熱する。この際、所定の成膜速度を確保するためにヒータ5a、5bは異なる温度で成膜される場合もある。気化された蒸着材料2は坩堝4の内部空間4eを通って開口部4bから放出され、基板8の一表面側に堆積して薄膜を形成する。なお、ヒータ5a,5bは、例えば、タングステンやモリブデン等の高融点金属から成る抵抗体に電流を流してこれを発熱させることで蒸着材料2を加熱する。   The heaters 5a and 5b are provided outside the side wall 4c of the crucible 4, the heater 5a is above the crucible center and the entire lower part, and the heater 5b is above the crucible center and the entire upper part at a temperature above the temperature at which the vapor deposition material 2 is vaporized. Heating to a temperature at which the film formation temperature can be secured (for example, about 1100 to 1400 ° C.). At this time, the heaters 5a and 5b may be formed at different temperatures in order to ensure a predetermined film formation rate. The vaporized vapor deposition material 2 is discharged from the opening 4b through the internal space 4e of the crucible 4, and is deposited on one surface side of the substrate 8 to form a thin film. The heaters 5a and 5b heat the vapor deposition material 2 by causing a current to flow through a resistor made of a refractory metal such as tungsten or molybdenum to generate heat.

本体部6は、坩堝4、及びヒータ5a,5bを収納し、これらヒータ5a,5bに用いる熱電対や電流導入端子が装着される。また、本体部6は、ヒータ5a,5bを加熱した際の坩堝保温性を高める機能と、ヒータ5a,5bからの輻射熱が外部に拡散することを抑制する機能をも有している。縁部6aは本体部6の上面に配置され、熱反射板7aを支持し、また、ヒータ5a,5bからの輻射熱が基板8側に拡散することを防止する。   The main body 6 houses the crucible 4 and the heaters 5a and 5b, and is mounted with thermocouples and current introduction terminals used for the heaters 5a and 5b. Moreover, the main-body part 6 also has a function which improves the crucible heat retention property at the time of heating heater 5a, 5b, and a function which suppresses that the radiant heat from heater 5a, 5b diffuses outside. The edge 6a is disposed on the upper surface of the main body 6, supports the heat reflecting plate 7a, and prevents the radiant heat from the heaters 5a and 5b from diffusing to the substrate 8 side.

熱反射板7aは、ヒータ5a,5bからの輻射熱が基板8側に拡散することを防止するための部材であり、括れ部4dの側面に配置されて、括れ部4dの最大径Lmaxより小さな口径の穴部7bを有する略ドーナツ形状を有している。この熱反射板7aは、図中において坩堝4の開口部4bの水平面から例えば2〜3mm程度の高低差Hを有して離間するように、括れ部4dの側面に配置されている。この配置関係により、気化した蒸着材料2が熱反射板7aと開口部4bとの間に付着することや、熱反射板7aに付着した蒸着材料2が坩堝4の外部に流出することを適切に防止できる。 Heat reflector 7a, the heater 5a, radiant heat from 5b is a member for preventing the diffusion of the 8-side substrate is disposed on the side surface of the constricted portion 4d, smaller than the maximum diameter L max constricted portion 4d It has a substantially donut shape having a hole 7b having a diameter. The heat reflecting plate 7a is disposed on the side surface of the constricted portion 4d so as to be separated from the horizontal surface of the opening 4b of the crucible 4 with a height difference H of, for example, about 2 to 3 mm. With this arrangement relationship, it is ensured that the vaporized vapor deposition material 2 adheres between the heat reflecting plate 7a and the opening 4b, and that the vapor deposition material 2 adhering to the heat reflective plate 7a flows out of the crucible 4. Can be prevented.

基板8は、蒸着作業を行うときに真空チャンバ内に坩堝4の底部4aと対向するように配置され、例えば、ITO(透明電極)膜が形成されたガラス基板であり、気化した蒸着材料2を蒸着させる。この基板8は、真空チャンバ内において、複数の蒸発源1の上方を、成膜順で通過するように所定の搬送速度で搬送されている。真空チャンバ内には、基板8を搬送する搬送ローラが設けられ、基板8は、蒸発源1の上方を通過する際に、蒸着材料2から気化した有機材料が基板8の一表面側に被着されることで多層膜が形成される。   The substrate 8 is disposed in the vacuum chamber so as to face the bottom 4a of the crucible 4 when performing a vapor deposition operation, and is, for example, a glass substrate on which an ITO (transparent electrode) film is formed. Evaporate. The substrate 8 is transported at a predetermined transport speed in the vacuum chamber so as to pass above the plurality of evaporation sources 1 in the order of film formation. In the vacuum chamber, a transport roller for transporting the substrate 8 is provided. When the substrate 8 passes above the evaporation source 1, the organic material evaporated from the vapor deposition material 2 is deposited on one surface side of the substrate 8. As a result, a multilayer film is formed.

なお、図示はしていないが、蒸着装置は、時間当たりの蒸着膜厚を計測する膜厚計測部なども備えている。この膜厚計測部は、CPU及びメモリ等から成るコントローラに接続され、当該コントローラは膜厚計測部から受信した制御信号に応じてヒータ5a,5bの加熱温度を制御して蒸着材料2の蒸着速度を調整する。   Although not shown, the vapor deposition apparatus also includes a film thickness measurement unit that measures the vapor deposition film thickness per hour. The film thickness measurement unit is connected to a controller including a CPU and a memory. The controller controls the heating temperature of the heaters 5a and 5b in accordance with a control signal received from the film thickness measurement unit, and the vapor deposition rate of the vapor deposition material 2 Adjust.

次に、本実施形態に係る蒸発源1の動作に関して説明する。最初に、蒸発源1を作動させて基板8に蒸着材料2を蒸着するとき、まず、真空ポンプを用いて真空チャンバ内を真空状態に減圧する。次に、ヒータ5a,5bを作動させて坩堝4を加熱する。この際の加熱温度は蒸着材料2が気化される温度(例えば1100〜1400℃)に設定される。   Next, the operation of the evaporation source 1 according to this embodiment will be described. First, when the evaporation source 1 is operated to deposit the deposition material 2 on the substrate 8, first, the inside of the vacuum chamber is decompressed to a vacuum state using a vacuum pump. Next, the crucible 4 is heated by operating the heaters 5a and 5b. The heating temperature at this time is set to a temperature at which the vapor deposition material 2 is vaporized (for example, 1100 to 1400 ° C.).

そして、気化された蒸着材料2が坩堝4の内部空間4eに放出され、続いて、気化された蒸着材料2は坩堝4の開口部4bから放出され、所定の搬送速度で搬送されている基板8の一表面側に堆積して薄膜を形成する。   The vaporized vapor deposition material 2 is discharged into the internal space 4e of the crucible 4, and then the vaporized vapor deposition material 2 is discharged from the opening 4b of the crucible 4 and is transported at a predetermined transport speed. Is deposited on one surface side to form a thin film.

次に、基板8の蒸着作業が終了して、蒸発源1の動作を止めるときには、ヒータ5a,5bの電源を止める。この際、熱反射板7aは坩堝4の開口部4bから所定値以上の高低差Hで離間するように、括れ部4dの側面に配置されている。ヒータ5a,5bの電源を止めたとき、ヒータ5a,5b及びこれに近接する坩堝4は高温状態にある。その一方、坩堝4の開口部4bは、ヒータ5a,5bから最も離れており、しかも熱反射板7aによりヒータ5a,5bからの熱が伝わり難くなっているので、比較的早い段階で冷却される。そのため、気化した蒸着材料2は坩堝4の開口部4b近傍に優先的に付着し、熱反射板7aには付着し難くなる。従って、上述した熱反射板7の配置関係によれば、気化した蒸着材料2が熱反射板7aと開口部4bとの間に再固着することが防止でき、再度過熱した場合に蒸着材料2が熱反射板7aや縁部6aの裏面にまで回り込むこと、熱反射板7aに付着した蒸着材料2が坩堝4の外部に流出することを適切に防止できる。その結果、気化された蒸着材料2が熱反射板7aや縁部6aに付着することに起因する蒸発源1の地絡や故障などの不具合の発生を適切に防止できる。   Next, when the vapor deposition operation of the substrate 8 is completed and the operation of the evaporation source 1 is stopped, the power sources of the heaters 5a and 5b are stopped. At this time, the heat reflecting plate 7a is disposed on the side surface of the constricted portion 4d so as to be separated from the opening 4b of the crucible 4 with a height difference H of a predetermined value or more. When the power sources of the heaters 5a and 5b are stopped, the heaters 5a and 5b and the crucible 4 adjacent thereto are in a high temperature state. On the other hand, the opening 4b of the crucible 4 is farthest from the heaters 5a and 5b, and heat from the heaters 5a and 5b is hardly transmitted by the heat reflecting plate 7a, so that it is cooled at a relatively early stage. . Therefore, the vaporized vapor deposition material 2 adheres preferentially in the vicinity of the opening 4b of the crucible 4 and hardly adheres to the heat reflecting plate 7a. Therefore, according to the arrangement relationship of the heat reflection plate 7 described above, the vaporized vapor deposition material 2 can be prevented from re-adhering between the heat reflection plate 7a and the opening 4b. It is possible to appropriately prevent the heat reflecting plate 7a and the edge 6a from going back to the back surface of the heat reflecting plate 7a and the vapor deposition material 2 attached to the heat reflecting plate 7a from flowing out of the crucible 4. As a result, it is possible to appropriately prevent the occurrence of defects such as a ground fault or failure of the evaporation source 1 due to the vaporized vapor deposition material 2 adhering to the heat reflecting plate 7a or the edge 6a.

(第2の実施形態)
以下、本発明の第2の実施形態に係る蒸着装置用蒸発源について図2を参照して説明する。なお、上記第1の実施形態に係る蒸発源1と同様の構成には同符号を付し、その詳細な説明は省略する(以下同様)。
(Second Embodiment)
Hereinafter, an evaporation source for a vapor deposition apparatus according to a second embodiment of the present invention will be described with reference to FIG. In addition, the same code | symbol is attached | subjected to the structure similar to the evaporation source 1 which concerns on the said 1st Embodiment, and the detailed description is abbreviate | omitted (hereinafter the same).

本実施形態では、熱反射板7aは、括れ部4dの最小径Lminとなる位置Nよりも底部4a側の位置において、括れ部4dの側面に接するように支持されている。この構成によれば、熱反射板7aが、坩堝4の開口部4bから離れた位置に配置されるので、熱反射板7aへの蒸着材料2の付着がより少なくなる。また、熱反射板7aが括れ部4dの側面に接するので、これらの間に蒸着材料2が入り込み難くなり、蒸着材料2が熱反射板7aの裏面にまで回り込むことや、熱反射板7aに付着した蒸着材料2が坩堝4の側面に流出することを防止できる。従って、本実施形態では、気化された蒸着材料2が熱反射板7aに付着することに起因する地絡や故障などの不具合の発生を適切に防止できる。 In this embodiment, the heat reflecting plates 7a, in the position of the bottom portion 4a side of a position N which is a minimum diameter L min constricted portion 4d, and is supported in contact with the side surfaces of the constricted portion 4d. According to this configuration, since the heat reflecting plate 7a is arranged at a position away from the opening 4b of the crucible 4, the deposition material 2 is less adhered to the heat reflecting plate 7a. Further, since the heat reflecting plate 7a is in contact with the side surface of the constricted portion 4d, it becomes difficult for the vapor deposition material 2 to enter between them. The deposited vapor deposition material 2 can be prevented from flowing out to the side surface of the crucible 4. Therefore, in this embodiment, generation | occurrence | production of malfunctions, such as a ground fault and a failure resulting from vaporized vapor deposition material 2 adhering to the heat | fever reflecting plate 7a, can be prevented appropriately.

(第3の実施形態)
以下、本発明の第3の実施形態に係る蒸着装置用蒸発源について図3を参照して説明する。図3に示すように、本実施形態において、蒸発源1は、熱反射板7aが括れ部4dの側面に接するように支持されている。また、この熱反射板7aに加えて熱反射板7c(追加熱反射板)をさらに備えている。この熱反射板7cは、熱反射板7aと所定距離(例えば1mm)以上離間するように、熱反射板7aより開口部4b側に配置されている。
(Third embodiment)
Hereinafter, an evaporation source for a vapor deposition apparatus according to a third embodiment of the present invention will be described with reference to FIG. As shown in FIG. 3, in this embodiment, the evaporation source 1 is supported so that the heat | fever reflecting plate 7a may contact the side surface of the constriction part 4d. In addition to the heat reflecting plate 7a, a heat reflecting plate 7c (additional heat reflecting plate) is further provided. The heat reflecting plate 7c is disposed closer to the opening 4b than the heat reflecting plate 7a so as to be separated from the heat reflecting plate 7a by a predetermined distance (for example, 1 mm) or more.

熱反射板7cは、括れ部4dの最大径Lmaxより小さな口径の穴部7dを有して略ドーナツ形状に形成されており、この穴部7dの口径は、熱反射板7aの穴部7bの口径より大きくなり、蒸着材料2が坩堝4の側面に落ち込むことを適切に防止できる。 The heat reflecting plate 7c has a hole portion 7d having a diameter smaller than the maximum diameter L max of the constricted portion 4d and is formed in a substantially donut shape. The diameter of the hole portion 7d is the hole portion 7b of the heat reflecting plate 7a. It is possible to appropriately prevent the vapor deposition material 2 from falling on the side surface of the crucible 4.

以上のように、本実施形態では、上記第1及び第2の実施形態の効果に加えて、熱反射板7aが、付着した蒸着材料2が坩堝4の側部に流出することを確実に防止する。また、蒸着材料2と縁部6aとが化学反応して、腐食した縁部6aの金属片がメンテナンス作業の際などにおいて蒸発源1の内部に混入することも防止できる。さらに、熱反射板7aと熱反射板7cとの間に蒸着材料2が流れ込む隙間を有する。このため、蒸着材料2が熱反射板7aによって塞き止められることがなく、気化された蒸着材料2が熱反射板7a,7cに付着することに起因する蒸発源1の地絡や故障などの不具合の発生を適切に防止できる。さらに、熱反射板7a,7cが2重になっているため基板8への輻射熱をより低減することができる。また、気化した蒸着材料2は坩堝4の開口部4b近傍により優先的に付着するようになるので、熱反射板7a,7cへの付着がさらに少なくなる。   As described above, in this embodiment, in addition to the effects of the first and second embodiments, the heat reflecting plate 7a reliably prevents the deposited vapor deposition material 2 from flowing out to the side of the crucible 4. To do. Moreover, it can also prevent that the vapor deposition material 2 and the edge 6a chemically react, and the metal piece of the edge 6a corroded mixes in the inside of the evaporation source 1 at the time of a maintenance operation. Furthermore, there is a gap through which the vapor deposition material 2 flows between the heat reflecting plate 7a and the heat reflecting plate 7c. For this reason, the vapor deposition material 2 is not blocked by the heat reflecting plate 7a, and the vapor deposition material 2 adheres to the heat reflecting plates 7a and 7c. The occurrence of defects can be prevented appropriately. Furthermore, since the heat reflecting plates 7a and 7c are doubled, the radiant heat to the substrate 8 can be further reduced. Further, since the vaporized vapor deposition material 2 is preferentially attached to the vicinity of the opening 4b of the crucible 4, adhesion to the heat reflecting plates 7a and 7c is further reduced.

なお、図3に示したように、縁部6aの成す口径を、上記従来の蒸発源101の縁部104aの成す口径よりも小さくすることで、蒸着材料2を縁部6aの裏面側に確実に入り込ませないようにできる。   In addition, as shown in FIG. 3, the vapor deposition material 2 can be reliably placed on the back surface side of the edge 6a by making the diameter formed by the edge 6a smaller than the diameter formed by the edge 104a of the conventional evaporation source 101. You can prevent it from getting in.

(変形例1)
本実施形態の第1の変形例について図4を参照して説明する。本変形例1において、熱反射板7aは、坩堝4と一体に形成されている。この構成により、上記第3の実施形態と同様の効果を奏すると共に、蒸発源1のメンテナンス時の工程を簡略化できる。
(Modification 1)
A first modification of the present embodiment will be described with reference to FIG. In the first modification, the heat reflecting plate 7 a is formed integrally with the crucible 4. With this configuration, the same effects as those of the third embodiment can be obtained, and the process during maintenance of the evaporation source 1 can be simplified.

(変形例2)
本実施形態の第2の変形例について図5を参照して説明する。本変形例2において、熱反射板7aは、その穴部7bから外周に向かって下方に傾斜する傾斜部7eを有している。この構成により、上記第2の実施形態と同様の効果を奏すると共に、熱反射板7aと熱反射板7cとの離間された隙間に流れ込んだ蒸着材料2を、傾斜部7eの傾きにより効率的に外部に流出する。従って、気化された蒸着材料2が熱反射板7aなどに付着することに起因する蒸発源1の地絡や故障などの不具合の発生を適切に防止できる。
(Modification 2)
A second modification of the present embodiment will be described with reference to FIG. In the second modification, the heat reflecting plate 7a has an inclined portion 7e inclined downward from the hole portion 7b toward the outer periphery. With this configuration, the same effects as those of the second embodiment can be obtained, and the vapor deposition material 2 that has flowed into the gap between the heat reflecting plate 7a and the heat reflecting plate 7c can be efficiently absorbed by the inclination of the inclined portion 7e. It flows out to the outside. Therefore, it is possible to appropriately prevent the occurrence of problems such as a ground fault or failure of the evaporation source 1 due to the vaporized vapor deposition material 2 adhering to the heat reflecting plate 7a or the like.

(変形例3)
本実施形態の第3の変形例について図6(a)を参照して説明する。本変形例3において、熱反射板7aは、2つの小片に分割されている。この構成により、上記第3の実施形態と同様の効果を奏すると共に、熱反射板7aの穴部7bの口径が、坩堝4の開口部4bの口径よりも小さくても、熱反射板7aの取り付けが可能になるので、蒸発源1のメンテナンス時の工程を簡略化できる。
(Modification 3)
A third modification of the present embodiment will be described with reference to FIG. In the third modification, the heat reflecting plate 7a is divided into two small pieces. With this configuration, the same effect as that of the third embodiment can be obtained, and the heat reflecting plate 7a can be attached even if the diameter of the hole 7b of the heat reflecting plate 7a is smaller than the diameter of the opening 4b of the crucible 4. Therefore, it is possible to simplify the process at the time of maintenance of the evaporation source 1.

(変形例4)
本実施形態の第4の変形例について図6(b)を参照して説明する。本変形例4において、2つの小片に分割された熱反射板7aの上面には、蒸着材料2が流れ込む複数の溝部7fが形成されている。この構成により、上記第3の実施形態と同様の効果を奏すると共に、熱反射板7dの上面に流れ込む蒸着材料2を、より外部に流出し難くする。
(Modification 4)
A fourth modification of the present embodiment will be described with reference to FIG. In the fourth modification, a plurality of groove portions 7f into which the vapor deposition material 2 flows are formed on the upper surface of the heat reflecting plate 7a divided into two small pieces. With this configuration, the same effects as those of the third embodiment can be obtained, and the vapor deposition material 2 flowing into the upper surface of the heat reflecting plate 7d can be more unlikely to flow out.

なお、本発明に係る蒸発源1は、有機EL素子の金属電極膜を蒸着により成膜する蒸着装置に好適に用いられるものであるが、有機膜以外の蒸着膜の成膜にも適宜に用いられ得る。また、上記各実施形態では、気化した蒸着材料2が上方向に進んで基板8に堆積するよう構成された例を示したが必ずしもこの構成に限られない。また、熱反射板7aのみでなく熱反射板7cを小片に分割することも考え得る。   The evaporation source 1 according to the present invention is suitably used for a vapor deposition apparatus for depositing a metal electrode film of an organic EL element by vapor deposition, but is also used appropriately for deposition of a vapor deposition film other than an organic film. Can be. Further, in each of the above embodiments, an example is shown in which the vaporized vapor deposition material 2 proceeds in the upward direction and is deposited on the substrate 8, but is not necessarily limited to this configuration. It is also conceivable to divide not only the heat reflecting plate 7a but also the heat reflecting plate 7c into small pieces.

1 蒸着装置用蒸発源
2 蒸着材料
4 坩堝
4a 底部
4b 開口部
4c 側壁
4d 括れ部
4e 内部空間
5a,5b ヒータ
6 本体部
6a 縁部
7a 熱反射板
7c 熱反射板(追加熱反射板)
7b,7d 穴部
7e 傾斜部
7f 溝部
8 基板
DESCRIPTION OF SYMBOLS 1 Evaporation source for vapor deposition apparatus 2 Vapor deposition material 4 Crucible 4a Bottom part 4b Opening part 4c Side wall 4d Constriction part 4e Internal space 5a, 5b Heater 6 Main body part 6a Edge part 7a Heat reflecting plate 7c Heat reflecting plate (additional heat reflecting plate)
7b, 7d Hole 7e Inclined part 7f Groove part 8 Substrate

Claims (9)

蒸着材料を収容する筒形状の坩堝と、前記蒸着材料を気化する温度に加熱するヒータと、前記坩堝及び前記ヒータを内部に収容する本体部と、を備える蒸着装置用蒸発源において、
前記坩堝は、前記蒸着材料が配置される底部と、当該底部と対向して形成される開口部と、前記底部及び前記開口部を連接する側壁と、前記開口部近傍の側壁に形成される括れ部とを有し、
前記括れ部の側面において前記開口部から離間するように配置されて、前記括れ部の最大径より小さな口径の穴部を有する熱反射板を備える、ことを特徴とする蒸着装置用蒸発源。
In an evaporation source for a vapor deposition apparatus, comprising: a cylindrical crucible that contains a vapor deposition material; a heater that is heated to a temperature at which the vapor deposition material is vaporized; and a main body that contains the crucible and the heater inside.
The crucible is formed on a bottom portion on which the vapor deposition material is disposed, an opening formed to face the bottom portion, a side wall connecting the bottom and the opening, and a side wall in the vicinity of the opening. And
An evaporation source for a vapor deposition apparatus, comprising: a heat reflecting plate disposed on a side surface of the constricted portion so as to be separated from the opening, and having a hole having a smaller diameter than the maximum diameter of the constricted portion.
前記熱反射板は、前記括れ部の最小径となる位置よりも前記底部側の位置において、前記括れ部の側面に接するように支持されている、ことを特徴とする請求項1に記載の蒸着装置用蒸発源。   2. The vapor deposition according to claim 1, wherein the heat reflecting plate is supported so as to be in contact with a side surface of the constricted portion at a position closer to the bottom than a position where the constricted portion has a minimum diameter. Evaporation source for equipment. 前記熱反射板は、前記坩堝と一体に形成されている、ことを特徴とする請求項1又は2に記載の蒸着装置用蒸発源。   The evaporation source for a vapor deposition apparatus according to claim 1, wherein the heat reflecting plate is formed integrally with the crucible. 前記括れ部の最大径より小さい口径となる穴部を有する追加熱反射板をさらに備え、
前記追加熱反射板は、前記熱反射板より前記坩堝の開口部側において、当該熱反射板と離間するように配置される、ことを特徴とする請求項1乃至3のいずれか一項に記載の蒸着装置用蒸発源。
An additional heat reflection plate having a hole portion having a diameter smaller than the maximum diameter of the constricted portion;
The said additional heat reflection board is arrange | positioned so that it may space apart from the said heat reflection board in the opening part side of the said crucible from the said heat reflection board. Evaporation source for evaporation equipment.
前記追加熱反射板は、その穴部が前記坩堝の括れ部の側面と離間するように配置される、ことを特徴とする請求項4に記載の蒸着装置用蒸発源。   The evaporation source for an evaporation apparatus according to claim 4, wherein the additional heat reflecting plate is disposed such that a hole portion thereof is separated from a side surface of the constricted portion of the crucible. 前記追加熱反射板の穴部の口径は、前記熱反射板の穴部の口径よりも大きい、ことを特徴とする請求項4又は5に記載の蒸着装置用蒸発源。   The evaporation source for a vapor deposition apparatus according to claim 4 or 5, wherein a diameter of the hole portion of the additional heat reflecting plate is larger than a diameter of the hole portion of the heat reflecting plate. 前記熱反射板は、2以上の小片に分割可能である、ことを特徴とする請求項1乃至6のいずれか一項に記載の蒸着装置用蒸発源。   The evaporation source for a vapor deposition apparatus according to claim 1, wherein the heat reflecting plate can be divided into two or more pieces. 前記熱反射板は、その穴部から外周に向かって下方に傾斜する傾斜部を有する、ことを特徴とする請求項1乃至7のいずれか一項に記載の蒸着装置用蒸発源。   The evaporation source for a vapor deposition apparatus according to any one of claims 1 to 7, wherein the heat reflecting plate has an inclined portion inclined downward from the hole portion toward the outer periphery. 請求項1乃至請求項8のいずれか一項に記載の蒸着装置用蒸発源を備えることを特徴とする蒸着装置。   A vapor deposition apparatus comprising the evaporation source for a vapor deposition apparatus according to any one of claims 1 to 8.
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CN106560008A (en) * 2014-07-07 2017-04-05 铣益系统有限责任公司 Possess the film deposition apparatus of multiple evaporation sources
CN106560007A (en) * 2014-07-07 2017-04-05 铣益系统有限责任公司 Possess the film deposition apparatus of multiple crucibles
CN107916401A (en) * 2017-12-15 2018-04-17 合肥鑫晟光电科技有限公司 Crucible and evaporation coating device is deposited
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CN106560008A (en) * 2014-07-07 2017-04-05 铣益系统有限责任公司 Possess the film deposition apparatus of multiple evaporation sources
CN106560007A (en) * 2014-07-07 2017-04-05 铣益系统有限责任公司 Possess the film deposition apparatus of multiple crucibles
CN105177507A (en) * 2015-09-08 2015-12-23 京东方科技集团股份有限公司 Evaporation crucible and evaporation equipment
US10066289B2 (en) 2015-09-08 2018-09-04 Boe Technology Group Co., Ltd. Evaporation crucible and evaporation device
JP2019104946A (en) * 2017-12-08 2019-06-27 住友化学株式会社 Vapor deposition source, electron beam vacuum deposition apparatus and method for manufacturing electronic device
JP7058499B2 (en) 2017-12-08 2022-04-22 住友化学株式会社 Manufacturing method of thin-film deposition source, electron beam vacuum-film deposition equipment and electronic devices
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CN113416932A (en) * 2021-06-10 2021-09-21 合肥联顿恪智能科技有限公司 Evaporation source device

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