JP2013237915A - Evaporation source and vacuum vapor deposition apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an evaporation source that has a linear source for a vacuum vapor deposition apparatus, which is less affected by a change in inner temperature of a crucible and causes a smaller change in evaporation rate even if a relative position between a heater of the linear source and the crucible is changed.SOLUTION: An evaporation source includes: a crucible with a longitudinal direction, including a plurality of nozzles aligned in the longitudinal direction of a surface facing a substrate and a material chamber storing a vapor deposition material therein; a casing for storing the crucible; a heater disposed between the crucible and the casing and extended in the longitudinal direction while having a predetermined width in a direction of a crucible depth; and a heat exchanger plate disposed between the crucible and the heater and having one end that comes into contact with the proximity of the nozzle of the crucible and a part that comes into contact with the crucible at least a point other than the proximity of the nozzle in the direction of the crucible depth.

Description

  The present invention relates to a vapor deposition crucible and a vacuum vapor deposition apparatus for emitting a material vapor to a large substrate when forming a thin film device such as an organic electroluminescence display (organic EL display) on a large substrate. Further, the present invention is not limited to the organic EL, and can be applied to other fields such as FPD, semiconductor, and solar cell.

  Among the display devices, the organic EL display device has attracted attention as a next-generation display because it has not only a wide viewing angle but also good response. A light emitting element constituting an organic EL display is composed of a light emitting layer of an organic film sandwiched between both an anode and a cathode. In order to increase luminous efficiency, intermediate layers such as an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer are selectively inserted. These electrodes, light emitting layers and intermediate layers are thin films of several nm to several hundred nm. One technique for forming this thin film is vacuum deposition (hereinafter referred to as vapor deposition).

  The evaporation source is generally composed of the following elements. A crucible that encloses the vapor deposition material, a heater that heats the crucible through a non-contact or partial member, a heat insulating material that is provided around the heater so as not to leak heat around the evaporation source, and a housing that houses the above elements. . The crucible is mainly composed of a nozzle that radiates a vapor deposition material vaporized by heating, and a material chamber that stores the vapor deposition material. There are two methods for heating the crucible: a method of heating only by heat radiation from a heater, and a method of heating in contact with a part of the crucible.

  Substrates for forming organic EL elements are becoming larger year by year. In particular, in an evaporation source that is long in one direction, called a linear source, and has nozzles arranged linearly in the longitudinal direction on the opposing surface of the substrate, the crucible installed in the evaporation source also has a length of 1 to 2 m in the longitudinal direction. Things are also needed. In the linear source, uniform heating in the crucible longitudinal direction is required to form a uniform film thickness. However, in reality, due to the expansion of the heater, the crucible, and the constituent members due to heat, the positional relationship with the heater differs at both ends of the crucible, and temperature distribution occurs in the crucible. In particular, when vapor deposition is performed at a high rate, even if the temperature difference is small, the vapor pressure of the vapor deposition material varies greatly, and the film thickness distribution is biased.

  As a device for relaxing the temperature distribution in the crucible, for example, there is a method of installing a heat transfer plate outside the crucible facing the heater. Patent Document 1 is a method of installing a heat transfer plate on a nozzle portion of a crucible. In Patent Document 1, the heat transfer plate extending from the nozzle portion prevents the radiant heat from the heater from directly striking the material chamber and supplies heat to the nozzle portion by heat transfer. By this method, the temperature difference between the nozzle portion and the main body portion is reduced by reducing the heat supply to the material chamber covered with the heat transfer plate and increasing the heat supply to the nozzle side.

  Patent Document 2 discloses a technique in which a space is provided between a heat transfer member and a crucible. In both patent documents, since the heat transfer member fixed to the nozzle receives heat from the heater and heat is supplied from the nozzle to the crucible body, the nozzle temperature can be maintained higher than the crucible temperature.

JP 2004-315898 A JP 2008-088496 A

  In the said patent document, the technique which reduces the temperature difference of a nozzle and a main-body part in the evaporation source which has a heat-transfer member is disclosed. However, the above-mentioned patent document is an invention for reducing the temperature distribution between the nozzle and the material chamber for eliminating nozzle clogging, and the temperature generated in the crucible longitudinal direction when applied to a linear source exceeding 1 m, that is, in the nozzle arrangement direction. It does not mention the reduction of the distribution.

  For large linear sources, the temperature distribution in the crucible affects the evaporation rate. The positional relationship between the heater and the crucible may cause an error of several millimeters due to expansion of the heater, the crucible, and the structural member due to heat. In addition, the dimensions of the heater and the crucible may change due to thermal expansion during the temperature rise, and the positional relationship may change. As a result, a temperature distribution is generated in the longitudinal direction of the crucible of the linear source, the evaporation rate in the longitudinal direction is changed, and the film thickness is deteriorated.

  The problem of the present invention is that, based on the technology of the conventional example, even if the relative position of the heater of the linear source and the crucible changes, the influence of the temperature change in the crucible is small and the change in the evaporation rate is small. It is to provide an evaporation source having a source.

The present invention solves the above problems and has at least the following characteristics.
The present invention provides a crucible having a longitudinal direction and having a plurality of nozzles arranged side by side in the longitudinal direction of the opposing surface of the substrate, a material chamber for storing a vapor deposition material therein, and a casing for storing the crucible A heater provided between the crucible and the casing and extending in the longitudinal direction with a predetermined width in the crucible depth direction, the heater having a facing surface, and between the crucible and the heater The evaporation source has one end near the nozzle of the crucible and a heat transfer plate having a portion in contact with the crucible at least at one location other than the vicinity of the nozzle in the crucible depth direction.

  Moreover, this invention is a vacuum evaporation system which has the said evaporation source, the moving mechanism which moves the said evaporation source along the said board | substrate, and the mask provided with the fixed vapor deposition pattern to the said board | substrate.

  According to the present invention, in the linear source, even if the relative position of the crucible and the heater changes due to strain due to heating, the change in the material chamber temperature can be suppressed. As a result, a linear source having a stable evaporation rate can be provided.

It is a figure which shows the organic EL device manufacturing apparatus which implement | achieves alignment and vapor deposition which are embodiment of this invention with the same vacuum evaporation system. It is the schematic diagram and operation | movement explanatory drawing of a structure of the vacuum conveyance chamber in FIG. 1, and a vacuum evaporation system. It is a schematic diagram which shows the external appearance of the evaporation source of the linear source which is embodiment of this invention. It is a figure which shows an example of the item of the evaporation source of the linear source shown in FIG. It is the figure which showed the cross section of the evaporation source of the 1st Example in embodiment shown in FIG. 3 in detail. It is sectional drawing of the evaporation source in the conventional structure corresponded in the cross section shown in FIG. It is a figure which shows the evaporation source cross-section temperature distribution for demonstrating the temperature change by the position change of another conventional structure and a heater and a crucible. It is a figure which shows the example of the temperature distribution of the evaporation source cross section in the evaporation source of the present Example 1. It is a figure which shows the example of the temperature distribution of the evaporation source cross section in the evaporation source of the conventional structure. It is a figure which shows the average temperature of the material chamber which is a simulation result in the temperature which assumed Mg vapor deposition. It is a figure which shows the vapor pressure of the nozzle of Mg obtained from the average temperature of the material chamber of FIG. It is a figure which shows the vapor | steam flow volume change obtained from the vapor pressure of the nozzle of Mg of FIG. It is a figure which shows the 2nd Example of the evaporation source in this embodiment.

Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 shows an organic EL device manufacturing apparatus 100 that realizes alignment and vapor deposition in the same vacuum vapor deposition apparatus 1 according to an embodiment of the present invention. The organic EL device manufacturing apparatus 100 is a cluster in which a polygonal vacuum transfer chamber 2 having a vacuum transfer robot 5 at the center and a substrate stocker chamber 3 and a vacuum deposition apparatus 1 as a film forming chamber are arranged radially around the periphery. Type organic EL device manufacturing apparatus. Each vacuum deposition apparatus 1 includes a substrate holding unit 9 that holds a substrate 6 and a mask 8. Further, a gate valve 10 for isolating the vacuum from each other is provided between the vacuum deposition apparatus 1 and the substrate stocker chamber 3 and the vacuum transfer chamber 2.

  FIG. 2 is a schematic diagram and an operation explanatory diagram of the configuration of the vacuum transfer chamber 2 and the vacuum deposition apparatus 1 in FIG. The vacuum transfer robot 5 shown in FIG. 2 has a two-link structure arm 57 that is movable up and down (not shown) and that can turn left and right. Have

  On the other hand, the vacuum deposition apparatus 1 includes a substrate holding unit 9 that holds the substrate 6 carried from the vacuum transfer robot 5, an evaporation source 7 that evaporates a deposition material that forms a light emitting layer, and forms a film on the substrate 6, and evaporation. It has evaporation source scanning means 43 for moving the source in the vertical direction, and a mask 8 for defining a deposition pattern on the substrate 6. The substrate holding part 9 has a comb-like hand 91 and a substrate turning means 93 that turns the substrate holding part 9 to face the upright mask 8. Moreover, the vacuum evaporation apparatus 1 moves the mask 8 based on the alignment camera 86 which images the alignment marks 85 and 84 (refer to drawing drawing) which exist in the mask 8 and the board | substrate 6 respectively on the mask 8, and the imaging result. And an alignment driving unit (not shown).

  With such a configuration, the vacuum transfer robot 5 takes out the substrate from the substrate stocker chamber 3 and carries it into the substrate holding unit 9 of the vacuum deposition apparatus 1 in a predetermined manner. In the vacuum vapor deposition apparatus 1, the substrate 6 carried in is directly opposed to the mask 8 by the substrate turning means 93, aligned, and the evaporation source 7 is moved up and down to deposit on the substrate 6. After vapor deposition, the substrate 6 is returned to a horizontal state. Thereafter, the substrate 6 is unloaded from the vacuum deposition apparatus 1 by the vacuum transfer robot 2 and is carried into another vacuum deposition apparatus 1 or returned to the substrate stocker chamber 3. In carrying in and out of the substrate 6 in such processing, the related gate valve 10 is controlled so as not to affect the processing of each vacuum deposition apparatus 1.

  Embodiments of the present invention will be described below in detail with reference to the drawings. In this embodiment, a vacuum deposition apparatus in which the glass substrate 6 is placed vertically and the evaporated deposition material is sprayed in the lateral direction will be described, but the same is true regardless of the orientation of the substrate and the direction in which the vapor is blown from the evaporation source. Effects can be obtained. Note that the organic EL light-emitting element can be manufactured using not only a glass substrate but also a substrate such as a resin material or a silicon wafer. Hereinafter, it is simply referred to as a substrate.

  FIG. 3 is a schematic view showing the appearance of the evaporation source 7 of a long linear source having a longitudinal direction in one direction according to the present embodiment. FIG. 4 is a diagram showing an example of the specifications of the evaporation source of the linear source shown in FIG. In FIG. 4, the length in the longitudinal direction of the evaporation source 7 is represented by Lw, the length in the depth direction perpendicular to the longitudinal direction of the crucible 11 is represented by Ld, and the height is represented by Lh. Further, the predetermined width in the longitudinal direction of the heater 24 is represented by Hd, and is preferably equal to or greater than I / 4 of the length Ld in the depth direction.

Example 1
Next, the structure of the evaporation source 7 of the first embodiment will be described. FIG. 5 is a diagram showing in detail the cross section of the evaporation source 7 of the first example in the embodiment shown in FIG. FIG. 6 is a cross-sectional view of the evaporation source in the conventional structure corresponding to the cross section shown in FIG.

  The evaporation source 7 has a crucible 11 having a material chamber 22 for holding the vapor deposition material 23 and a nozzle 21 for discharging the evaporated material in the direction of the substrate 6, and a predetermined width in the longitudinal direction of FIG. 3 for heating the crucible. And a heater 24 provided. The evaporation source 7 has a surface facing the heater, absorbs radiant heat from the heater, and transfers heat to the contact portion 25b with the crucible 11, and the crucible 11, the heater 24, and the heat transfer plate. And a housing 26 in which 25 is housed. The substrate 6 is placed on the nozzle side of the crucible 11 so as to face the nozzle 21. Here, the vicinity of the nozzle on the substrate side of the crucible 11 is called a crucible front part, and the opposite side is called a crucible rear part. Examples of the material of the heat transfer plate 25 include stainless steel, molybdenum, tantalum, tungsten, aluminum, iron, titanium, carbon, aluminum nitride, boron nitride, or a composite material thereof.

  In order to efficiently keep the crucible 11 between the housing 26, the heater 24, and the crucible 11, heat insulating means may be provided. For example, the heat insulating means may be one having a cooling function by flowing cooling water, or may be provided with a plurality of non-contact reflectors 28 as shown in FIG. In the latter case, a thin flat plate with high reflectivity is preferable. Further, a deposition preventing plate 27 may be provided to prevent the vapor deposition material 23 sprayed from the suction nozzle 21 from flowing between the housing 26 and the reflector 28 and between the reflector 28 and the crucible 11.

  The evaporation source 7 produced as shown in FIG. 5 or 6 is used facing the substrate 6. That is, the substrate is present on the left side of FIG. 5 or 6 in the direction perpendicular to the direction of the nozzle 21. The substrate 6 and the evaporation source 7 are installed in the vacuum evaporation apparatus 1. The heater 24 in the evaporation source 7 uses a quartz vibrator type rate sensor (not shown) so that the evaporation rate of the vapor deposition material 23 released from the evaporation source 7 becomes a desired value at the time of vapor deposition. The scanning speed of the evaporation source 7 is controlled. Note that the temperature of members (such as crucibles and heaters) constituting the evaporation source 7 and the internal space may be measured with a thermocouple (not shown) and controlled to a predetermined temperature.

  In order to uniformly deposit the deposited film on the substrate 6, the evaporation source 7 is generally a linear source that is elongated in one direction. For example, as shown in FIG. In that case, the evaporation source 7 or the substrate 6 is moved in the vertical direction on the paper surface, and control is performed so that a film having a desired thickness is formed on the main surface of the substrate. In the present embodiment, as shown in FIG. 2, the evaporation source is moved in the vertical direction by the evaporation source scanning unit 43.

  The upper diagram of FIG. 7 shows another conventional structure. In the upper diagram of FIG. 7, the same reference numerals are used for the same functions as in FIG. In the conventional structure as shown in the upper diagram of FIG. 7, the crucible 11 is easily cooled at the nozzle 21 that is the opening of the housing and the rear portion of the material chamber 22 where the heater 24 is not present. In particular, there is no heat insulating member around the nozzle 21, and heat is radiated directly toward the outside. The decrease in the temperature of the nozzle 21 with respect to the material chamber 22 leads to the deposition of the material at the nozzle 21, and it is necessary to perform incidental operations such as removal and cleaning of the deposited material during maintenance. Therefore, as shown in FIG. 6, in Patent Document 1, the temperature of the nozzle 21 and the material chamber 22 is positively heated by radiant heat from the heater 24 by connecting the heat transfer plate 25 in the vicinity of the nozzle 21. Used to reduce the difference.

  On the other hand, in the conventional structure as shown in FIG. 6, there is a problem that it is difficult to keep the relative position of the crucible 11 and the heater 24 constant due to expansion of structural members such as the heater 24 and the crucible 11 due to heat. In particular, in a linear source that requires a length of 1 m or more in the longitudinal direction, the relative positions of the crucible 11 and the heater 24 vary in the longitudinal direction. Therefore, a temperature distribution occurs in the longitudinal direction of the crucible during heating, and the evaporation amount of the material has a distribution. As a result, the film thickness uniformity deteriorates.

  The reason why the crucible temperature changes when the relative position of the crucible 11 and the heater 24 changes is the change in the temperature gradient in the crucible due to the change in the crucible heating position. Therefore, in the specifications of the evaporation source of the long linear source in FIG. 4, in the structure of the first embodiment in FIG. 5, the conventional structure in FIG. 6 and the other conventional structure without the heat transfer plate shown in the upper diagram of FIG. A simulation showing the temperature distribution in the material chamber 22 was performed. The lower diagrams of FIGS. 7, 8, and 9 are examples of the simulation results. FIG. 8 is a diagram showing an example of the temperature distribution of the evaporation source cross section in the evaporation source of the first embodiment shown in FIG. FIG. 9 is a diagram illustrating an example of a temperature distribution of a cross section of an evaporation source in an evaporation source having a conventional structure. FIG. 7 is a diagram showing an example of a temperature distribution of a cross section of an evaporation source in another conventional evaporation source.

  As a specific method of simulation, a steady radiant heat transfer calculation of a two-dimensional cross section was performed, and the heat distribution in the evaporation source 7 was analyzed. The heater temperature was set to 1500 ° C. assuming a vapor deposition process of a metal (for example, aluminum: A liter) material that is the vapor deposition material 23. The inside of the evaporation source 7 was evacuated, heat conduction in the vacuum part was not considered, and heat transfer only by heat radiation was considered. Further, the surroundings of the housing 26 exchange heat with a normal temperature external environment and heat radiation. The depth Ld of the crucible 11 was 167 mm, and the position of the heater 24 shifted by 3 mm from the tip of the nozzle 21 to the rear of the crucible was set as the design position. Hereinafter, the bottom of the material chamber when the heater 24 is in the design position in the simulation by the finite element method (graphs indicated by solid lines in each figure) and when the heater 24 is further shifted to the 5 mm material chamber 22 side (graphs indicated by broken lines in each figure) The temperature distribution of 22b was calculated.

  Consider the case where a heater is present near the crucible nozzle as shown in FIG. At this time, a temperature gradient as shown in FIG. 7 exists in the depth (X) direction of the crucible 11. When the heater 24 moves backward, the crucible heating portion is also shifted backward. As indicated by the broken line in FIG. 7, the peak of the crucible temperature rises by the amount of deviation of the heater backward so as to equalize the temperature gradient at the front of the crucible. As described above, when the heater is moved to the rear portion, heat escape is reduced and the temperature of the entire crucible is increased.

  As a method for preventing the temperature change of the crucible, there is a method of reducing the temperature gradient in the crucible 11 and reducing the peak temperature rise when the heater is moved. For this purpose, a method using the heat transfer plate 25 as in the first embodiment is conceivable. First, the figure which shows the simulation result of the temperature distribution of the material chamber bottom part 22b of the other conventional structure which does not have the heat exchanger plate 25 shown in the upper figure of FIG. 7, and this Example 1 which has the heat exchanger plate 25 shown in FIG. The effect of the heat transfer plate 25 will be described with reference to FIGS.

  Comparing both simulation results shown by the broken line graph when the heater moves 5 mm backward, the peak position does not change depending on the presence or absence of the heat transfer plate 25. On the other hand, the material chamber temperature difference is 66 ° C. in FIG. 7 without the heat transfer plate, 53 ° C. in FIG. 8 with the heat transfer plate, and the heat transfer plate 25 can confirm the effect of reducing the crucible temperature gradient. As an effect of the heat transfer plate 25, radiant heat from the heater 24 can be made uniform. The heat transfer plate 25 first absorbs radiant heat from the heater 24. The absorbed heat is uniformly diffused in the heat transfer plate 25 by conduction. The heat transfer plate 25 transmits heat to the crucible body 11a by radiation. Thereby, the heating to the crucible body 11a becomes uniform, and the temperature distribution in the crucible 11 becomes gentle. Therefore, even if the position of the heater is changed, an increase in peak temperature is suppressed with a decrease in temperature gradient. Since it is necessary to absorb the radiant heat once with the heat transfer plate 25, the heat transfer plate 25 covers the crucible heater facing surface in the first embodiment.

  Further, as an effect of the heat transfer plate 25, heat can be transferred to a portion that is easily cooled by heat transfer, and the temperature gradient can be reduced. In the present invention, in order to transfer heat to the crucible front part and rear part, which are easy to cool, the contact part of the heat transfer plate to the crucible is performed at the front part 25a and the rear part 25b.

  Next, a comparison between the structure of Embodiment 1 in FIG. 5 and the conventional structure in FIG. 6 is shown. The difference between the first embodiment and the conventional structure is the structure of the heat transfer plate. The other points are the same. The heat transfer plate 25j having a conventional structure has a terminal portion on the nozzle 21 side of the heater 24 on the rear side of the crucible, and the terminal portion does not have a contact portion with the crucible body 11a. On the other hand, the heat transfer plate 25 according to the first embodiment reaches the terminal part at the rear part of the crucible, and has a crucible body 11a and a contact part 25b at the terminal part.

  According to the first embodiment, since the surface of the crucible facing the heater is covered with the heat transfer plate 25, the radiant heat from the heater is once absorbed by the heat transfer plate 25, and the absorbed heat is transferred by conduction. 25 uniformly diffuse. As a result, heating by radiant heat can be performed over the entire region in the depth direction of the crucible body 11 from the entire region of the heat transfer plate 25 reaching the end portion. This effect is referred to herein as the whole area radiant heat effect. On the other hand, in the conventional structure of FIG. 6, the effect of radiant heat is limited to the region where the heat transfer plate 25j exists.

  Further, according to the first embodiment, since there is a contact portion 25b with the crucible body 11a at the terminal portion, heat is transferred from the contact portion 25b to the crucible body 11a in addition to the contact portion 25a, and the temperature of the crucible rear side is increased. Reduction is suppressed. Here, this effect is called a heat transfer effect. On the other hand, the conventional structure of FIG. 6 does not have this effect.

Due to the two effects described above, as shown in FIGS. 8 and 9, the average temperature of the material chamber bottom 22a when the heater is shifted backward by 5 mm is increased by 1.89 ° C. in the first embodiment. In the conventional structure, the temperature rises by 1.1 ° C. to 2.99 ° C.
Thus, according to the first embodiment, the average temperature fluctuation of the material chamber bottom 22b due to the displacement of the heater 24 can be suppressed to be lower than that of the conventional structure.

  8 and 9, according to the first embodiment, the temperature of the nozzle 21 can be maintained higher than that of the crucible main body 11a as in the conventional structure of FIG. 6, so that nozzle clogging is less likely to occur. be able to. Furthermore, according to the first embodiment, similarly to the conventional structure of FIG. 6, temperature reduction on the material chamber side can be prevented and the material can be effectively evaporated.

  In order to confirm this effect more directly, the amount of change in the steam flow rate from the nozzle 21 calculated from the average temperature of the material chamber 22 in the simulation assuming Mg deposition is obtained. FIG. 10 shows the average temperature of the material chamber 22 when Mg deposition is assumed. FIG. 11 shows the vapor pressure of the Mg nozzle 21 obtained from the average temperature shown in FIG. FIG. 12 shows the change in the vapor flow rate of Mg obtained from the vapor pressure in FIG.

  From FIG. 10, the average temperature of the material chamber 22 when the heater is shifted rearward by 5 mm increases by 0.9 ° C. in the conventional structure, but is as small as 0.1 ° C. in the first embodiment. Assuming that the external pressure of the crucible 11 is 0 Pa (Pascal), as shown in FIG. 11, the change in the vapor pressure of the nozzle 21 is increased by 0.011 Pa in the conventional structure, whereas it is 0 in the first embodiment. .001Pa rise and small. In the structure of the crucible 11 shown in FIGS. 5 and 6, the steam flow rate is proportional to the vapor pressure in the material chamber. Therefore, when the change in the vapor pressure is converted into the change in the Mg flow rate, the conventional structure increases by 3.5%. On the other hand, in Example 1, the increase is 0.3%, which is as small as 1/10 or less. The increase of 3.5% in the prior art is not small compared with ± 3 to several percent required for film thickness uniformity. On the other hand, in Example 1, it is + 0.3%, and the film thickness uniformity is further maintained.

  As described above, in the structure of Example 1, the material chamber bottom temperature change was reduced, so that the positional relationship between the crucible and the heater was robust, and the change in the evaporation rate was reduced.

(Example 2)
FIG. 13 is a diagram illustrating a second example of the evaporation source 7. The difference from the first embodiment shown in FIG. 5 is that the heat transfer to the crucible 11 is enhanced by sandwiching a gasket 20 made of a soft material with high thermal conductivity between the heat transfer plate 25 and the crucible 11. As a result, since the temperature of the nozzle 21 can be maintained higher than the crucible body 11a, nozzle clogging hardly occurs. Examples of the material of the gasket 20 include thin carbon, copper, aluminum, silver, and the like. You should decide in consideration of it. The same effect can be obtained by integrating the heat transfer plate 25 and the crucible 11 and connecting them by welding.

  In the second embodiment, as in the first embodiment, the above-described whole area radiant heat effect and heat transfer effect can be obtained.

  In the embodiment described above, the heat transfer plate 25 is provided in the entire region in the depth direction of the crucible 11. However, even if the heat transfer plate 25j having the conventional structure is provided with the contact portion 25b at the terminal portion, the above-described entire region radiant heat effect is provided. It is not possible to obtain heat, but a heat transfer effect can be obtained.

  In addition, the contact portion described above is not a terminal portion, or is not limited to the terminal portion. Even if another contact portion is provided between the nozzle-side contact portion 25a and the terminal portion contact portion 25b, the heat transfer effect can be achieved. Can be obtained.

DESCRIPTION OF SYMBOLS 1; Vacuum deposition apparatus 2: Vacuum transfer chamber 3: Substrate stocker chamber 5: Vacuum transfer robot 6: Substrate 7: Evaporation source 8: Mask 9: Substrate holding part 10: Gate valve 11: Crucible 20: Gasket 21: Nozzle 22: Material chamber 22b: Material chamber bottom portion 23: Vapor deposition material 24: Heater 25: Heat transfer plate 25a: Contact portion with the crucible body at the nozzle side end portion of the heat transfer plate 25b: End portion of the heat transfer plate opposite to the nozzle side 26: Housing 27: Deposition plate 28: Heat insulation mechanism 43: Evaporation source scanning means 93: Substrate turning drive means 100: Organic EL device manufacturing apparatus

Claims (9)

A crucible having a longitudinal direction and having a plurality of nozzles arranged in the longitudinal direction on the opposing surface of the substrate, and a material chamber for storing a vapor deposition material therein,
A casing for storing the crucible;
A heater provided between the crucible and the casing, and provided with a predetermined width in the crucible depth direction and extending in the longitudinal direction;
A heat transfer plate provided between the crucible and the heater and having a portion in contact with the crucible at one end near the nozzle of the crucible and at least one location other than the vicinity of the nozzle in the crucible depth direction; An evaporation source characterized by comprising: The evaporation source according to claim 1,
The evaporation source, wherein the heat transfer plate is provided so as to cover a facing surface of the crucible. The evaporation source according to claim 1,
The evaporation source, wherein the heat transfer plate has a width in the depth direction that is longer than the certain width of the heater in the depth direction. The evaporation source according to claim 1 or 2,
The evaporation source characterized in that the one place is an end portion on the opposite side to the vicinity of the nozzle in the depth direction.   5. The evaporation source according to claim 1, wherein the material of the heat transfer plate is stainless steel, molybdenum, tantalum, tungsten, aluminum, iron, titanium, carbon, aluminum nitride, boron nitride, or a composite thereof. An evaporation source characterized in that it is one of the materials. The evaporation source according to any one of claims 1 to 4,
An evaporation source, wherein a gasket is provided at the contact portion between the crucible and the heat transfer plate. The evaporation source according to claim 6.
An evaporation source, wherein the gasket is made of stainless steel, and the gasket is made of stainless steel, carbon, copper, aluminum, silver, or a composite material thereof. The evaporation source according to any one of claims 1 to 7,
An evaporation source comprising a crucible welded to the heat transfer plate mounting method.   A vacuum comprising: the evaporation source according to claim 1; a moving mechanism for moving the evaporation source along the substrate; and a mask having a certain vapor deposition pattern on the substrate. Vapor deposition equipment.

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