KR20140093622A - Deposition apparatus and evaporation source used for deposition apparatus - Google Patents

Abstract

Provided are a deposition device capable of performing stable deposition for a long time and an evaporation source capable of stably receiving a large amount of Al as a deposition material. The deposition device according to the present invention comprises a deposition source (30) for depositing a substrate and a process chamber in which the evaporation source (30) is stored and to which the substrate is transferred. The evaporation source (30) has a crucible (10). The crucible (10) comprises a material receiving part (11) to which solid Al materials (2) are supplied; a melting part (12) installed close to the material receiving part (11) and heating and melting the Al materials (2) supplied from the material receiving part (11) to make molten liquid (1); and an evaporation part (13) installed close to the melting part (12) and heating the molten liquid (1) supplied from the melting part (12) to generate steam.

Description

TECHNICAL FIELD [0001] The present invention relates to a deposition apparatus and an evaporation source used therefor,

The present invention relates to a deposition apparatus and an evaporation source used in the deposition apparatus.

Recently, organic devices are attracting attention as a new industrial field. For example, organic EL devices such as organic EL devices, organic EL devices, electronic papers and RFIDs, organic transistors as driving devices, and organic thin film solar cells as solar cells have been developed as display devices and lighting devices. Particularly, in organic ELs, it is required to increase the size of display substrates and lighting devices as well as to increase the size of manufacturing substrates. As a result, the production line of the organic EL can be manufactured from the 4.5th generation production line of the development (the glass substrate dimension is 730mm x 920mm) to the 5.5th to the 6th generation production line (the glass substrate dimension (1300 mm x 1500 mm to 1500 mm x 1800 mm), and further, it is expected to affect the eighth-generation production line (the glass substrate dimension is 2200 mm x 2500 mm). In addition, organic thin film solar cells are also being produced by roll-to-roll (R2R). In the production of these organic devices, deposition apparatuses are mainly used, and the size of the deposition apparatus is increasing.

When the display device or the illumination device is enlarged, it is also important to lower the cost of the metal electrode formed by vapor deposition. In a large-sized organic EL panel, in order to maintain the uniformity of luminance, it is necessary to lower the resistance of the upper electrode. In a semi-permeable film of a magnesium-silver (Mg-Ag) alloy used in a conventional top emission type organic EL, since the film thickness is as thin as about 10 nm, the electric resistance is too high and the uniformity of the screen luminance and the illumination luminance is ensured It is difficult to do. In order to lower the electrical resistance, the Ag film formed on the Mg-Ag electrode at a film thickness of 150 to 300 nm and laminated is expensive because the expensive Ag is used in a large amount. In order to attain a low cost, it is effective to use a bottom emission type organic EL using an inexpensive aluminum (Al) reflective electrode having a low electrical resistance and a high reflectivity as an upper electrode. Also, in the top emission type organic EL using a transparent electrode such as ITO (indium tin oxide) in the upper electrode, aluminum which is low in electric resistance and high in reflectance and lower in Ag than aluminum is effective for the lower electrode serving as the reflective electrode. Therefore, there is a demand for a device capable of depositing a thick Al electrode at a large area of 150 to 300 nm.

Al electrodes have conventionally been formed by resistance heating deposition, induction heating deposition, and EB deposition (electron beam deposition). In the case of depositing a small amount of metal electrode by an experiment or the like, the evaporation material may be filled in a crucible, a hearth liner or the like, and the evaporation material may be completely scattered. However, when a large amount of evaporation material is used by mass production or the like, a material supply mechanism for a crucible or a haas liner is required. As the material supply mechanism, there are a method in which a plurality of crucibles or a washer liner are provided in a vacuum chamber and the materials are sequentially changed by a revolver type or the like, and a method in which a mass material is dropped and supplied by a hopper, And a method of supplying wire materials such as Al to the crucible by a wire feed method as described in,

However, when a plurality of crucibles or a washer liner for exchange are provided in the vacuum chamber, a space for arranging a plurality of crucibles is required in the vacuum chamber, and the vacuum chamber is enlarged to cause an increase in cost. If there is a limit to the size of the vacuum chamber, there is a limit to the number of crucibles and haas liner that can be arranged in a certain space, and it is difficult to cope with the increase in size of the substrate. Particularly, when the substrate area is enlarged such as a display device or an illumination device, the amount of material to be used is significantly increased, so that the conventional method makes it difficult to perform continuous operation for a long time.

On the other hand, also in the method of continuously feeding the wire rod of Al by the wire feed method, there is a drawback that the weight of the wire rod increases with the increase of the supply amount and the size of the reel or the drive system becomes large, thereby making it difficult to supply the stable wire rod. Since Al is a metal having a low melting point, there is a drawback that the Al wire is likely to melt and fall from the outside of the crucible due to radiant heat from the crucible or the haas liner, thereby easily causing supply troubles.

The method of dropping and supplying the massive evaporation material by a hopper or the like is suited to supply a large amount of evaporation material. However, when the evaporation material is supplied to the crucible or the washer liner, the temperature of the metal melt is changed to change the deposition rate or the material which is not sufficiently melted is discharged in the direction of the substrate by splashing, dumping or the like, There is a problem that it is difficult to stably form Al for a long time by generating a foreign substance.

Japanese Patent Application Laid-Open No. 2007-39809

As described above, the conventional evaporation apparatus has a problem that it is difficult to stably accommodate a large amount of Al wire rod supplied by the material supply mechanism in the crucible, and stable deposition can not be performed for a long time.

An object of the present invention is to provide a deposition apparatus capable of performing stable deposition for a long time and an evaporation source capable of stably and massively accommodating Al as an evaporation material.

The features of the deposition apparatus according to the present invention for solving the above problems are as follows.

An evaporation source for evaporating the substrate, and a process chamber for accommodating the evaporation source and for transporting the substrate. Wherein the evaporation source includes a crucible, the crucible includes a material accommodating portion to which a solid Al material is supplied, and a melting portion which is adjacent to the material accommodating portion and which heats and melts the Al material supplied from the material accommodating portion, And an evaporator adjacent to the melted portion and generating steam by heating the melt supplied from the melted portion.

INDUSTRIAL APPLICABILITY According to the present invention, it is possible to provide a deposition apparatus capable of performing stable deposition for a long time, and an evaporation source capable of stably and massively accommodating Al as an evaporation material.

BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a schematic view schematically showing a cross section of an evaporation source according to an embodiment of the present invention; FIG.
2 is a schematic view schematically showing a cross section of an evaporation source according to another embodiment of the present invention.
3 is a view showing a saturated vapor pressure curve of Al, Cu, Au, Ag and Mg.
4 is a view showing a state in which a tip end portion of a hopper for feeding a solid material is inserted into a material receiving portion of an evaporation source.
5 is a view showing a deposition apparatus according to the first embodiment of the present invention.
6 is a view showing a deposition apparatus according to a second embodiment of the present invention.
7 is a view showing a deposition apparatus according to a third embodiment of the present invention.
8 is a view showing a deposition apparatus according to a fourth embodiment of the present invention.
9 is a diagram showing an example of a method of supplying an evaporation material to an evaporation source in the evaporation apparatus according to the first embodiment.

The evaporation apparatus according to the present invention includes an evaporation source for evaporating a substrate, and a process chamber for accommodating the evaporation source and transporting the substrate. A molten portion for heating and melting the Al material supplied from the material accommodating portion to melt the molten material and a molten portion for melting the molten Al material; And an evaporator for heating the melt supplied from the melted portion to generate steam.

Preferably, the crucible has a material accommodating portion, a molten portion and an evaporating portion arranged in a horizontal direction, and a nozzle for ejecting the vapor to the outside is provided in the evaporator. The evaporation source is disposed outside the evaporation section and includes a heater for heating the evaporation section, a first heat-exchanging plate disposed at a position between the outside and the evaporation section in the direction of spraying the vapor on the outer surface of the crucible, A second heat shielding plate disposed at a position between the evaporating unit and the melting unit on the outer surface of the crucible for heat shielding the evaporating unit and the melting unit; a second heat sink disposed on the outer surface of the crucible at a position between the melting unit and the material accommodating unit, And a reflector disposed on the side of the crucible for covering heat to cover the evaporator, the melted portion, the heater, the first heat plate, the second heat plate, and the third heat plate. .

More preferably, the evaporation source is maintained at a temperature at which the saturated vapor pressure of the melt is 0.1 Pa or less by the melted portion, the second heat plate, the third heat plate, and the reflector.

More preferably, the evaporation source includes a vapor backflow prevention member provided between the evaporation portion and the molten portion in the crucible, and disposed below the liquid surface of the melt from the inner wall surface of the upper portion of the crucible.

The steam backflow preventing member prevents the vapor of the melt from flowing from the vaporizing portion of the crucible to the molten portion and the molten portion is maintained in the temperature range where the saturated vapor pressure of the melt is 0.1 Pa or less, So that the vapor of the melt does not flow into the material accommodating portion.

In the evaporation source according to the present invention, the material-containing portion of the crucible, the molten portion of the crucible and the outside of the crucible are thermally buffered, the heat from the crucible to the outside of the crucible is suppressed, do. Therefore, the supply trouble of the evaporation material, such as melting the Al wire of the wire feed from the outside of the crucible, or clogging the connection portion between the crucible and the hopper for supplying the material, can be avoided.

The evaporation source and the evaporation apparatus according to the present invention can stably form Al for a long time and can be used for manufacturing an organic device such as an organic EL with a large area and low cost. The problems to be solved by the present invention other than the above and the constitution and the effect of the evaporation source and the evaporation apparatus according to the present invention are clarified by the following description of the embodiments.

Hereinafter, embodiments of an evaporation source and a deposition apparatus according to the present invention will be described with reference to the drawings. The following description is illustrative of specific examples of the contents of the present invention and is not intended to limit the present invention. Various changes and modifications may be made by those skilled in the art within the scope of the technical idea disclosed in the present specification . In the drawings for describing the present invention, the same elements are denoted by the same reference numerals, and repetitive description thereof may be omitted. In the following description, the term " vertical " means perpendicular to the bottom surface of the deposition apparatus, and " horizontal " means parallel to the bottom surface of the deposition apparatus.

<Embodiment of evaporation source>

1 is a schematic view schematically showing a cross section of an evaporation source according to an embodiment of the present invention. The structure of the evaporation source 30 and the solid solution of the melt 1 in the crucible 10, 2) (also referred to as &quot; Al material (2) &quot;). The evaporation source 30 includes a horizontal crucible 10, a heater 24, heat shield plates 25-1, 25-2 and 25-3, a reflector 26, a die seat 27, (28). The evaporation source 30 is installed in a vacuum processing chamber (process chamber), and constitutes a deposition apparatus.

The crucible 10 has a material accommodating portion 11, a molten portion 12 and an evaporating portion 13 and has an inclined member 21, a vapor backflow preventive member 22 and a nozzle 23 therein. The material accommodating portion 11 is maintained at a temperature lower than the melting point of the Al material 2 and has an opening for accommodating the Al material 2 supplied from the outside of the crucible 10, And an inclined member 21 for feeding the molten metal to the molten metal 12 in accordance with the molten metal. The melted portion 12 is adjacent to the material accommodating portion 11 and melts the Al material 2 supplied from the material accommodating portion 11 to form a melt 1. The evaporator 13 is adjacent to the molten portion 12 and heats the melt 1 supplied from the molten portion 12 to generate steam. The nozzle 23 is disposed at the tip end of the crucible 10 on the side of the evaporation portion 13 and injects the vapor of the melt 1 toward the outside.

The steam backflow prevention member 22 is provided between the molten portion 12 and the evaporation portion 13 and prevents steam having a high vapor pressure of the melt 1 from flowing from the evaporation portion 13 to the molten portion 12 Shaped member. The steam backflow preventive member 22 is located below the liquid surface of the melt 1 of the molten portion 12 from the inner wall surface of the upper portion of the crucible 10 so as not to allow the steam in the evaporation portion 13 to flow into the molten portion 12 As shown in FIG. The vapor backflow prevention member 22 has an opening below the surface of the melt 1 of the melt 1 so that the melt 1 flows between the molten portion 12 and the evaporation portion 13 , And at least a part of the melt 1 below the liquid level is missing. The "liquid surface of the melt (1)" described herein is the liquid surface of the melt (1) when the evaporation source (30) is operated in a steady state.

The heater (24) is disposed outside the evaporator (13) and heats the evaporator (13). The heat shield plates 25-1, 25-2, and 25-3 are disposed on the outer surface of the crucible 10. The heat shield plate 25-1 is disposed on the outer surface of the crucible 10 at a position between the outside (vacuum side) and the evaporator 13 in the direction of spraying the vapor of the melt 1, 13). The heat shield plate 25-2 is disposed at a position between the evaporation portion 13 and the molten portion 12 on the outer surface of the crucible 10 and shields the evaporation portion 13 and the molten portion 12 from heat. The heat shield plate 25-3 is disposed at a position between the melted portion 12 and the material accommodating portion 11 on the outer surface of the crucible 10 and thermally shields the molten portion 12 and the material accommodating portion 11 . The reflector 26 is disposed laterally of the crucible 10 so as to cover the molten portion 12, the evaporator 13, the heater 24 and the heat shield plates 25-1 to 25-3 of the crucible 10 (Lateral direction with respect to the spraying direction of the vapor of the steam generator 1), and keeps radiant heat from the heater 24. The die seat (27) and the support (28) support the evaporation source (30).

1, the crucible 10 has a cylindrical shape or a rectangular parallelepiped shape having a cavity therein. The crucible 10 has a horizontally arranged horizontally arranged material accommodating portion 11, a molten portion 12 and an evaporating portion 13, to be. The cavity inside the crucible 10 receives the vapors of the Al solid material 2, the melt 1 and the melt 1 and is sealed so that they do not leak to the outside The inside and the outside of the crucible 10 communicate with each other through the opening for receiving the Al material 2 of the melt 1 and the nozzle 23 for spraying the vapor of the melt 1). The inclined member 21, the vapor backflow prevention member 22 and the nozzle 23 are inserted into the crucible 10, but a part of the inclined member 21, the vapor backflow prevention member 22 and the nozzle 23 can be formed integrally with the crucible 10.

When the crucible 10 is horizontally disposed such that the material accommodating portion 11, the molten portion 12 and the evaporating portion 13 are horizontally arranged, as described in the embodiment of the deposition apparatus to be described later, It can be vertically erected and deposited. In the evaporation source in which the crucible 10 is not a horizontal type, it is necessary to keep the substrate horizontally, but it is difficult to keep the large substrate horizontally. In the evaporation source 30 according to the present embodiment, it is not necessary to hold the substrate horizontally, so that it is possible to cope with the enlargement of the substrate.

2 is a schematic view schematically showing a cross section of an evaporation source 30 according to another embodiment of the present invention. In the evaporation source 30 shown in Fig. 2, the inclined member 21 of the crucible 10 is provided not only in the material accommodating portion 11, but also in the material accommodating portion 11 and the molten portion 12. The inclined member 21 extends from the material accommodating portion 11 to the molten portion 12 and conveys the Al material 2 from the material accommodating portion 11 to the molten portion 12 along with gravity, The melt 1 of the molten Al material 2 can be sent to the vapor backflow preventing member 22 or the evaporator 13 in accordance with the gravity. Since the melt 1 of the molten portion 12 is kept at a lower temperature than the melt 1 of the evaporation portion 13 as described later, the viscosity becomes higher and it becomes difficult to flow. Therefore, it is effective to use the gravity to flow.

As the material of the crucible 10, a ceramic material having low reactivity with Al and having a lower thermal conductivity than metal is used. Specifically, boron quality cattle (PBN), or boron quality cattle (BN), aluminum nitride (AlN) that is created by the sintering method, alumina (Al ₂ O _3), graphite (C) that is created by the heat-decomposable CVD method , Beryllium oxide (BeO), or silicon nitride (Si ₃ N ₄ ). In addition to this, the composite was BN the composite ceramic material, or titanium diboride (TiB ₂₎ of a composite ceramic material added to the additive material to the above-described materials, for example, BN and AlN, or BN, an electrically conductive comprising a plurality of the above materials Composite and the like can be used.

The inclined member 21, the vapor backflow preventive member 22 and the nozzle 23 provided in the crucible 10 are made of the same material as the crucible 10 and are most preferable because there is no difference in thermal expansion coefficient. However, it is also possible to use other ceramics by preliminarily machining with a tolerance that does not cause distortion or stress caused by the difference in thermal expansion coefficient during heating. As a result, it is possible to use, for example, a BN composite in which BN and conductive titanium boride (TiB ₂ ) are combined with each other with high wettability with Al as the vapor backflow preventive member 22, the nozzle 23, and the like. In this case, since the melt 1 of Al easily leaks to the vapor backflow preventing member 22 and the nozzle 23, the conductance of the melt 1 in the vapor backflow preventing member 22 is improved, 23 are leaked and the area of injecting the vapor of the melt 1 can be increased so that high-speed deposition can be performed.

The heater 24 may be formed of a metal heater such as tantalum (Ta) or tungsten (W), a BN composite or graphite in which BN and conductive titanium boride (TiB ₂ ) are combined or an electrically conductive ceramic such as PBN One ceramic heater can be used.

The heat sinks 25-1, 25-2 and 25-3 and the reflector 26 are made of a material which is insoluble at the operating temperature (1300 to 1500 ° C) of the evaporation source 30, Plates or sheets of material are used. For example, a plate or sheet of a refractory metal such as Ta or molybdenum (Mo) can be used. Each of the heat shield plates 25-1, 25-2 and 25-3 and the reflector 26 is composed of a plurality of plates or sheets, and the performance of heat shielding and insulation can be changed by changing the number of sheets or sheets . The number of plates or sheets of the heat shield plates 25-1, 25-2, and 25-3 may be different from each other in order to maintain the temperatures of the melted portion 12 and the evaporator 13 at desired temperatures And the number of plates or sheets of the reflector 26 may be different between a portion covering the molten portion 12 and a portion covering the evaporator 13. [ 1 and 2 show an example in which the number of reflectors 26 is two in a portion covering the fused portion 12 and three in a portion covering the evaporation portion 13. [ The number of reflectors 26 may be the same in a portion that covers the melted portion 12 and a portion that covers the evaporated portion 13.

The heater 24 is disposed around the evaporation portion 13 of the crucible 10 of the evaporation source 30 at a high temperature and has a space surrounded by the heat shield plates 25-1 and 25-2 and the reflector 26 And is heated by radiant heat to keep the evaporation section 13 of the crucible 10 at a high temperature and to generate vapor of Al. A heater is not particularly required to be disposed around the fused portion 12 of the crucible 10. The melted portion 12 is heated by the thermal conduction from the evaporator 13 and the melt 1 and the heat shielding effect by the heat shield plates 25-2 and 25-3 and the reflector 26, ) Is melted.

The material accommodating portion 11 of the crucible 10 is disposed outside the heat shield plate 25-3 and the reflector 26 and is cooled by heat radiation in a vacuum space or the like, Lt; RTI ID = 0.0 &gt; of &lt; / RTI &gt;

The temperatures of the evaporator 13, the melted portion 12 and the material accommodating portion 11 are controlled by the output of the heater 24 and the heat shield plates 25-1, 25-2 and 25-3 and the reflector 26 ) By changing the number of sheets. The temperature of the evaporator 13 can be changed by the output of the heater 24 and the number of the heat shield plates 25-1 and 25-2 and the reflector 26. [ The temperature of the melted portion 12 can be changed by the number of the heat shield plates 25-2 and 25-3 and the reflector 26 in particular. If the temperature of the melted portion 12 is not sufficient to melt the Al material 2, a second heater may be provided around the melted portion 12. [ The temperature of the material accommodating portion 11 can be changed, in particular, by the number of heat shield plates 25-3. The evaporation portion 13, the molten portion 12, and the material accommodating portion 11 adjust the temperature based on the characteristics of the saturated vapor pressure curve of the evaporation material as shown below.

Fig. 3 is a diagram showing saturated vapor pressure curves of Al, Cu, Au, Ag, and Mg. 3, the dotted line represents the saturated vapor pressure curve in the solid state ("(S)" is added to the symbol of the element), and the solid line represents the saturation vapor pressure curve in the liquid state The saturated vapor pressure curve of FIG. ◆ indicates the melting point.

It can be seen from Fig. 3 that Mg has a high saturated vapor pressure of 10 Pa or more in a solid state and mainly evaporates by sublimation. Therefore, it is inappropriate to use Mg for the evaporation material of the evaporation source 30 according to the embodiment of the present invention in which the evaporation material is supplied as the melt 1 to the evaporation portion 13. [ Ag and Cu have a melting point of 961.78 캜 and 1084.62 캜, respectively, and a saturation vapor pressure of about 10 Pa is obtained at a temperature higher than the melting point by about 200 to 300 캜, and a practical deposition rate can be obtained. However, when the deposition material is melted by setting the temperature of the molten portion 12 at a temperature higher than the melting point of the evaporation material by about 100 to 200 DEG C, since Ag and Cu have a relatively high saturated vapor pressure of about 1 Pa at this temperature, There is a possibility that steam is introduced into the material accommodating portion 11 from the portion 12. Therefore, when Ag and Cu are used for an evaporation material, problems such as clogging of the opening for accommodating the solid material in the material accommodating portion 11 are likely to occur.

On the other hand, Al has a melting point of 660.32 캜 and a saturated vapor pressure of 0.1 Pa or lower at a temperature of 1050 캜 or lower. Therefore, when Al is used for the evaporation material and the temperature of the melting portion 12 is 1050 占 폚 or lower, Al can be melted and the inflow of the vapor from the melting portion 12 into the material accommodating portion 11 The melt 1 can be maintained at a low vapor pressure of not more than 0.1 Pa at a saturated vapor pressure substantially unproblematic.

As described above, Al is used for the evaporation material (solid material (2)) to adjust the temperature of the molten portion (12) so that the saturated vapor pressure of the melt (1) The solid material 2 can be sent to the evaporator 13 after the solid material 2 is once phase-changed into the melt 1 in the molten portion 12 while suppressing the inflow of steam into the melt 11. Even when the solid material 2 is supplied to the material accommodating portion 11 by the hopper or the like, the solid material 2 whose ablation rate is changed suddenly or is not sufficiently melted by the temperature of the melt 1 is changed, It is possible to avoid the problem that foreign materials are generated in the Al film by being emitted in the direction of the substrate by the molten metal or the like.

When the solid material 2 is Al, in order to obtain a saturated vapor pressure of 10 Pa or more at which an effective deposition rate as an evaporation source 30 starts to be obtained, the Al material 2 may be heated to about 1300 占 폚 or more . 1, a heater 24 capable of heating the Al material 2 to a high temperature of 1300 占 폚 or higher is disposed around the evaporation portion 13. As shown in Fig. The Al material 2 is heated in the melting portion 12 at a temperature of about 700 to 1050 DEG C which is sufficient to melt the Al material 2 by the heat from the evaporator 13 and has a saturated vapor pressure of 0.1 Pa or less The number of the heat shield plate 25-2 and the number of the reflector 26 are adjusted.

Au has a melting point of 1064.18 캜 and a melt 1 having a saturated vapor pressure of 0.1 Pa or less which does not substantially cause the inflow of steam from the molten portion 12 into the material accommodating portion 11 at a temperature of 1300 캜 or lower . However, in order to obtain a saturated vapor pressure of 10 Pa or more at which an effective deposition rate starts to be obtained, a temperature of 1600 占 폚 or higher is required, and a heater 24 and a crucible 10 are required. The melted portion 12 needs a second heater capable of heating at a temperature of about 1100 to 1400 占 폚, which is sufficient for melting Au. Further, when the evaporation source is operated at a temperature of about 1600 DEG C, the load on the heater 24 and the crucible 10 is large, which may shorten the service life. For these reasons, in the evaporation source 30 according to the embodiment of the present invention, it can be said that Al is preferable to Au as solid material 2.

4 is a schematic view schematically showing a cross section of an evaporation source 30 according to an embodiment of the present invention. The solid material 2 of Al is supplied to the material accommodating portion 11 of the evaporation source 30 Fig. 3 is a view showing a state in which the tip end of the hopper 29 is inserted. The tip end portion of the hopper 29 is inserted into the opening of the material accommodating portion 11 and the solid material 2 of Al of the particle size is supplied to the crucible 10 through the hopper 29. The hopper 29 may be an existing one, may be always inserted into the opening of the material accommodating portion 11, or may be inserted only when necessary.

The tip of the hopper 29 is inserted into the opening of the material accommodating portion 11 held at a temperature lower than the melting point of the solid material 2 of Al, Al solid material 2 in the form of a lump of particles is supplied to the crucible 10 through the hopper 29. The solid material 2 is sent to the molten portion 12 by the action of gravity by using the inclined member 21 of the material accommodating portion 11. Since the solid material 2 is supplied to the crucible 10 in the evaporation source 30 according to the embodiment of the present invention as described above, the Al wire material of the wire feed is melted from the outside of the crucible 10, The supply trouble of the solid material 2 can be avoided.

The solid material 2 of Al is phase-changed into a melt 1 having a saturated vapor pressure of 0.1 Pa and a low vapor pressure in the course of being sent from the material accommodating portion 11 to the molten portion 12, Passes through the lower portion (or lower portion) of the backflow prevention member 22 and is sent to the high-temperature evaporation portion 13. The steam backflow prevention member 22 passes the melt 1 as described above but does not allow the steam in the evaporation portion 13 to flow into the molten portion 12. [ Thereby, the vapor pressure in the evaporation portion 13 is hardly changed, and even when the solid material 2 of Al is intermittently supplied, deposition can be stably performed without fluctuation or splashing of the deposition rate. Since the vapor pressure of the molten portion 12 is as low as 0.1 Pa or less, the Al material 2 is hardly flowed back from the molten portion 12 to the material accommodating portion 11 and the material accommodating portion 11 and the hopper 29 Can be avoided.

Further, in the vapor deposition apparatus, although a plurality of evaporation sources 30 are disposed in the vacuum processing chamber (process chamber), there is a limit in the capacity of the hopper that can be provided for each evaporation source 30. Therefore, in order to continuously operate the evaporation apparatus for a long time, it is necessary to provide a transfer chamber outside the process chamber and use a large-capacity material supply device provided in the transfer chamber, as shown in the following embodiments.

<First Embodiment of Deposition Apparatus>

5 is a view showing a deposition apparatus according to the first embodiment of the present invention. The deposition apparatus according to the first embodiment is an example of a deposition apparatus of a cluster type (in which a plurality of process chambers 100 are arranged around a conveying robot chamber disposed at the center). In Fig. 5, for the sake of simplicity, only one process chamber 100 is shown by removing a part of the deposition apparatus.

The deposition apparatus includes a process chamber 100 maintained in vacuum, a transfer robot chamber (not shown) connected to the process chamber 100, a gate valve 120 for maintaining a vacuum between the transfer robot chambers, A metal mask or metal frame 150 and a horizontal evaporation source unit 160. The substrate exchange unit 130 receives the substrate 110, The transfer robot chamber has a transfer robot (not shown) for transferring the substrate 110 to the process chamber 100, and is adjacent to the gate valve 120. The gate valve 120 is installed on the wall between the transfer robot chamber and the process chamber 100. The substrate exchange part 130, the driving part 140, the metal mask or metal frame 150 and the horizontal evaporation source unit 160 are accommodated in the process chamber 100. The substrate 110 transported into the process chamber 100 is deposited with the Al material 2 by the lateral evaporation source unit 160, thereby forming a film of Al.

The horizontal evaporation source unit 160 includes a plurality of evaporation sources 30 according to the present invention and faces the front side of the substrate 110 which is vertically erected and is vertically movable in a vertical direction by a mechanical mechanism Lt; / RTI &gt; The evaporation sources 30 are arranged linearly in the horizontal direction along the substrate 110 in the horizontal evaporation source unit 160, preferably at regular intervals. The number of evaporation sources 30 in the horizontal evaporation source unit 160 can be determined according to the size of the substrate 110.

The operation of the deposition apparatus according to the first embodiment will be described. First, the gate valve 120 is opened, and the substrate 110 is carried into the substrate exchange unit 130 by the top-surface transfer by the transfer robot of the transfer robot chamber. The carrying robot has two comb teeth shaped hands in upper and lower two stages, for example, the upper side is for carry-in and the lower side is for carry-out, and carry-in and carry-out can be performed simultaneously by one operation.

Next, the loaded substrate 110 is set up substantially vertically by the driving unit 140, and then the substrate 110 and the metal mask or the metal frame 150 are aligned. The metal mask or the metal frame 150 is used for dividing the film to be formed on a pixel-by-pixel or per-panel basis. Next, the horizontal evaporation source unit 160 is vertically scanned in the process chamber 100 for deposition (indicated by solid arrows in FIG. 5), and Al is deposited on the entire surface of the substrate 110. Film formation is performed by scanning the front side of the substrate 110 at least once, or twice, reciprocally. The Al film is, for example, a lower electrode film or an upper electrode film of the organic EL.

Although only one substrate exchange section 130 may be provided in the process chamber 100, two substrate exchange sections 130 are provided in the present embodiment. The gate valve 120 has a size corresponding to the two substrate exchange units 130, and the process chamber 100 can accommodate two substrates at the same time. Further, the horizontal evaporation source unit 160 can be driven not only in the vertical direction (vertical direction) but also in the horizontal direction along the substrate 110 by a mechanical mechanism (not shown) ). Thereby, the horizontal evaporation source unit 160 is horizontally moved to a position before another substrate 110 while the one substrate is aligned, and then the substrate is scanned in the vertical direction in front of the substrate 110 to deposit Thus, the productivity of the film formation can be improved.

<Second Embodiment of Deposition Apparatus>

6 is a view showing a deposition apparatus according to a second embodiment of the present invention. The vapor deposition apparatus according to the second embodiment differs from the vapor deposition apparatus according to the first embodiment in that a vertical evaporation source unit 170 is provided in place of the horizontal evaporation source unit 160. [ Hereinafter, the vertical evaporation source unit 170 will be described, and description of other components will be omitted.

The vertical evaporation source unit 170 includes a plurality of evaporation sources 30 according to the present invention and faces the substrate 110 which is vertically erected on the front side and is horizontally In the horizontal direction). The evaporation sources 30 are linearly arranged in the vertical direction (vertical direction) in the vertical evaporation source unit 170, preferably at regular intervals. The number of the evaporation sources 30 in the vertical evaporation source unit 170 can be determined according to the size of the substrate 110.

The operation of the deposition apparatus according to the second embodiment will be described only on the difference from the operation of the deposition apparatus according to the first embodiment. The vertical evaporation source unit 170 is aligned with the substrate 110 in the process chamber 100 after aligning the substrate 110 and the metal mask or the metal frame 150 that are brought into the substrate exchange unit 130 and set up substantially vertically, (Indicated by solid arrows in Fig. 6), and Al is deposited on the entire surface of the substrate 110. In this way,

The vertical evaporation source unit 170 makes the intermediate position of the two substrate exchanging units 130 be the home position so as to be alternately moved in front of the two substrates in the machine mechanism (not shown) ), So that the substrate can be scanned in the horizontal direction along the substrate in front of each substrate. Thereby, while the vertical evaporation source unit 170 is moved to the position of another one of the substrates 110 while the one substrate is aligned, the vertical evaporation source unit 170 is scanned in the horizontal direction along the substrate 110 in front of the substrate 110 It is possible to improve the productivity of film formation.

&Lt; Third Embodiment of Deposition Apparatus &

7 is a view showing a deposition apparatus according to a third embodiment of the present invention. The vapor deposition apparatus according to the third embodiment is a vapor deposition apparatus in which a plurality of process chambers 100 arranged in a straight line are moved to deposit the substrate 110 using the rails 190 and the substrate trays 180 Method] is an example of a deposition apparatus. In Fig. 7, for the sake of simplicity, only one process chamber 100 is shown by removing a part of the deposition apparatus.

The deposition apparatus includes a process chamber 100 maintained at a vacuum, a substrate tray 180 vertically erected and holding the substrate 110, a metal mask or metal frame 150 installed on the substrate tray 180, and a vertical evaporation source unit 170). The metal mask or metal frame 150 and the vertical evaporation source unit 170 are accommodated in the process chamber 100. The process chamber 100 is provided with rails 190 for passing therethrough and a plurality of process chambers 100 are connected by the rails 190. The substrate tray 180 moves along the rail 190 while keeping the substrate 110 approximately perpendicular. The substrate 110 moves between the plurality of process chambers 100 while being vertically erected by the substrate tray 180.

The vertical evaporation source unit 170 has a plurality of evaporation sources 30 according to the present invention and faces the substrate 110 which is vertically erected in the same manner as the evaporation apparatus according to the second embodiment. However, the vertical evaporation source unit 170 is fixed to the inner wall of the process chamber 100 or the fixing member installed on the inner wall of the process chamber 100. The evaporation sources 30 are linearly arranged in the vertical direction (vertical direction) in the vertical evaporation source unit 170, preferably at regular intervals. The number of the evaporation sources 30 in the vertical evaporation source unit 170 can be determined according to the size of the substrate 110.

The operation of the deposition apparatus according to the third embodiment will be described. The substrate 110 is vertically erected and stacked on the substrate tray 180 and aligned with the metal mask or metal frame 150. Thereafter, the substrate 110 is carried into the process chamber 100 by the substrate tray 180 on the rails 190, and passes through the vertical evaporation source unit 170 at a constant speed. The vertical evaporation source unit 170 injects an evaporation material (Al material) and deposits the evaporation material on the substrate 110 passing at a constant speed. In this way, it is possible to form Al on the entire surface of the substrate 110. [

INDUSTRIAL APPLICABILITY As described above, the deposition apparatus according to the present invention can be applied not only to the cluster type but also to the inline type deposition apparatus, and the productivity of the deposition can be improved even in the inline type deposition apparatus.

<Fourth Embodiment of Deposition Apparatus>

8 is a view showing a deposition apparatus according to a fourth embodiment of the present invention. The evaporation apparatus according to the fourth embodiment is a cluster type and the process chamber 100 is an example of a deposition apparatus having a two-dimensional evaporation source unit 200 having a plurality of evaporation sources 30. In Fig. 8, for the sake of simplicity, only one process chamber 100 is shown by removing a part of the deposition apparatus. The evaporation apparatus according to the fourth embodiment differs from the evaporation apparatus according to the first embodiment in that a two-dimensional evaporation source unit 200 is provided in place of the horizontal evaporation source unit 160. Hereinafter, the two-dimensional evaporation source unit 200 will be described, and description of other components will be omitted.

The two-dimensional evaporation source unit 200 includes a plurality of evaporation sources 30 according to the present invention and faces the substantially vertically erected substrate 110 on the front surface and is disposed on the inner wall of the process chamber 100 or the process chamber 100, As shown in Fig. The evaporation source 30 is arranged in the two-dimensional evaporation source unit 200 in a two-dimensional shape in the horizontal direction along the substrate 110 in the vertical direction (vertical direction), that is, Preferably at regular intervals. The number of the evaporation sources 30 in the two-dimensional evaporation source unit 200 can be determined according to the size of the substrate 110.

The operation of the deposition apparatus according to the fourth embodiment will be described only on the difference from the operation of the deposition apparatus according to the first embodiment. The two-dimensional evaporation source unit 200 injects an evaporation material (Al material) to deposit the substrate 110 and the metal mask or the metal frame 150 after aligning the substrate 110 and the metal mask or the metal frame 150, And Al is deposited on the entire surface of the substrate 110.

The use of the two-dimensional evaporation source unit 200 makes it possible to deposit at a higher rate than in the horizontal evaporation source unit 160 and the vertical evaporation source unit 170 in which the evaporation source 30 is arranged in one dimension, thereby improving the productivity of film formation . Further, the evaporation amount of each evaporation source 30 can be made smaller than that of the horizontal evaporation source unit 160 or the vertical evaporation source unit 170 while maintaining the productivity of the film formation, so that the temperature of each evaporation source 30 can be lowered, There is also an effect that the use time or the life of the evaporation source 30 can be prolonged.

In this embodiment, as in the first embodiment, the substrate exchange units 130 are provided at two places in the process chamber 100. [ The two-dimensional evaporation source unit 200 may be provided on the entire surface opposite to the two substrates as shown in Fig. 8, and the middle position of the two substrate exchange units 130 may be the home position, Or may be alternately moved in front of the respective substrates. When the two-dimensional evaporation source unit 200 can be moved, the two-dimensional evaporation source unit 200 is not fixed but is driven in a horizontal direction along the substrate 110 in a machine mechanism (not shown) Shift in front. Thereby, it is possible to deposit the substrate 110 by moving the two-dimensional evaporation source unit 200 to one further substrate 110 while aligning the one substrate, so that the productivity of the deposition can be further improved Can be improved.

&Lt; Fifth Embodiment of Deposition Apparatus >

9 is a view showing a deposition apparatus according to a fifth embodiment of the present invention. In the deposition apparatus (Fig. 5) according to the first embodiment, the evaporation source 30 in the process chamber 100 is provided with an evaporation material Al material (2)] is supplied. 9 shows the inside of the process chamber 100 from the side. A hopper 29 for supplying the Al material 2 to the crucible 10 is inserted into the evaporation source 30 (see Fig. 4). The hopper 29 is supplied with the Al material 2 from the outside of the process chamber 100. Hereinafter, the components common to the evaporation apparatus according to the first embodiment will not be described.

9, the deposition apparatus includes a process chamber 100, a transfer chamber 210 provided outside the process chamber 100, and a large-capacity material supply device 230 accommodated in the transfer chamber 210. As shown in FIG. The process chamber 100 houses a horizontal evaporation source unit 160 having a plurality of evaporation sources 30, a substrate 110, and a metal mask or a metal frame 150. In Fig. 9, only one evaporation source 30 is shown in the horizontal evaporation source unit 160. Fig. A vacuum valve 220-1 is provided between the relay chamber 210 and the process chamber 100 and a vacuum valve 220-2 is provided between the relay chamber 210 and the atmosphere. The relay chamber 210 is normally evacuated to a vacuum and held at a high vacuum.

The material supply device 230 is a device for containing the Al material 2 and supplying the Al material 2 to the hopper 29. [ Al material 2 is periodically supplied to the material supply device 230 from the atmosphere through a vacuum valve 220-2. The capacity of the material supply device 230 is preferably larger than the capacity of the hopper 29.

The horizontal evaporation source unit 160 scans in the vertical direction in the process chamber 100 but does not move the vacuum valve 220-1 at predetermined time intervals when the process chamber 100 is close to the top wall surface of the process chamber 100. [ And the Al material 2 is supplied from the material supply device 230 to the hopper 29. [ The horizontal evaporation source unit 160 has a plurality of evaporation sources 30 and the Al material 2 is supplied from the material supply device 230 to the hopper 29 of each evaporation source 30. Accordingly, the relay chamber 210 has the same number of the material supply devices 230 as the number of the evaporation sources 30.

Thus, the Al material 2 can be supplied to the evaporation source 30 so that a long time of vapor deposition can be performed without installing a large-capacity hopper in the process chamber 100.

In this embodiment, an example of a method of supplying the Al material 2 to the evaporation source 30 of the evaporation apparatus (Fig. 5) according to the first embodiment is shown. The evaporation source 30 of the evaporation apparatus (FIG. 6) according to the second embodiment is provided on the outer wall surface of the process chamber 100 in the horizontal direction (the scanning direction of the vertical evaporation source unit 170) along the substrate 110 When the vertical evaporation source unit 170 is brought close to the relay room 210, the hopper 29 of the evaporation source 30 from the material supply device 230 in the relay room 210 is inclined upward Al material (2) is supplied. In this case, the hopper 29 is inserted into the evaporation source 30 at an oblique angle so as to receive the Al material 2.

The evaporation source 30 of the vapor deposition apparatus (FIG. 7) according to the third embodiment in which the vertical evaporation source unit 170 is fixed is not limited to the evaporation source 30 of the wall provided with the vertical evaporation source unit 170 of the process chamber 100 And the Al material 2 is supplied obliquely to the hopper 29 of the evaporation source 30 from the material supply device 230 in the transfer chamber 210. [ In this case as well, the hopper 29 is inserted into the evaporation source 30 so as to receive the Al material 2 at an oblique angle.

When the two-dimensional evaporation source unit 200 is fixed, the two-dimensional evaporation source unit 200 of the process chamber 100 is set to the evaporation source 30 of the evaporation source device (FIG. 8) And the Al material 2 is supplied to the hopper 29 of the evaporation source 30 from the material supply device 230 in the transfer chamber 210. The transfer material When the two-dimensional evaporation source unit 200 is moved in the horizontal direction (left-right direction) along the substrate 110, when the two-dimensional evaporation source unit 200 is fixed, And the Al material 2 is supplied from the material supply device 230 to the hopper 29 when the two-dimensional evaporation source unit 200 stops moving in the lateral direction.

As described above, all of the vapor deposition apparatuses according to the first to fourth embodiments are provided with the Al material 2 in the evaporation source 30 so that deposition for a long time is possible without installing a large-capacity hopper in the process chamber 100. [ Can be supplied.

The present invention is not limited to the above-described embodiment, but includes various modifications. For example, the above-described embodiments are described in detail in order to facilitate understanding of the present invention, and the present invention is not limited to the embodiments having all the configurations described above.

1: melt
2: Al solid material (Al material)
10: Crucible
11: Material receiving portion
12:
13:
21: inclined member
22: Steam backflow prevention member
23: Nozzle
24: Heater
25-1, 25-2, 25-3: a heat plate
26: Reflector
27:
28: Holding
29: hopper
30: evaporation source
100: Process chamber
110: substrate
120: Gate valve
130: substrate exchange unit
140:
150: Metal mask or metal frame
160: Horizontal evaporation source unit
170: Vertical evaporation source unit
180: substrate tray
190: Rail
200: Two-dimensional evaporation source unit
210: relay room
220-1, 220-2: Vacuum valve
230: Material feeding device

Claims (20)

An evaporation source for evaporating the substrate,
The evaporation source is accommodated in the process chamber
And,
The evaporation source includes a crucible,
Wherein the crucible comprises: a material accommodating portion to which a solid Al material is supplied; a melting portion which is adjacent to the material accommodating portion and which heats and melts the Al material supplied from the material accommodating portion to melt the melt; And an evaporation portion adjacent to the molten portion and generating steam by heating the melt supplied from the molten portion. The method according to claim 1,
Wherein the crucible is provided with a nozzle for disposing the material receiving portion, the molten portion, and the evaporating portion in a horizontal direction and injecting the vapor to the outside,
The evaporation source
A heater disposed outside the evaporator and heating the evaporator,
A first heat shielding plate disposed on an outer surface of the crucible at a position between the outside and the evaporating unit in the direction of spraying the vapor and for shielding the outside and the evaporating unit from heat;
A second heat shielding plate disposed at a position between the evaporating unit and the melting unit on an outer surface of the crucible, for heat shielding the evaporating unit and the melting unit;
A third heat shielding plate disposed at a position between the melted portion and the material accommodating portion on the outer surface of the crucible for heat shielding the melted portion and the material accommodating portion;
A reflector disposed on the side of the crucible for covering the evaporator, the melted portion, the heater, the first heat shield, the second heat shield, and the third heat shield,
Further comprising: 3. The method of claim 2,
Wherein the evaporation source comprises a plurality of the first heat shielding plate, the second heat shielding plate, the third heat shielding plate, and the reflector. 3. The method of claim 2,
Wherein the evaporation source is maintained at a temperature at which the saturated vapor pressure of the melt is 0.1 Pa or less by the melted portion, the second heat shield plate, the third heat shield plate, and the reflector. 3. The method of claim 2,
Wherein the evaporation source has a plate-shaped member provided between the evaporation portion and the molten portion inside the crucible and downward from a surface of the melt, from an inner wall surface of an upper portion of the crucible. 3. The method of claim 2,
Wherein the evaporation source has an opening for receiving the material accommodating portion and the Al material. 3. The method of claim 2,
Wherein the evaporation source has the material accommodating portion and an inclined member for feeding the Al material to the melting portion according to gravity. 3. The method of claim 2,
Wherein the evaporation source is configured such that the material accommodating portion and the melting portion send the Al material from the material accommodating portion to the melting portion according to gravity and a slope for sending the melt from the melting portion to the evaporation portion according to gravity And a member. 3. The method of claim 2,
Wherein the evaporation source has an opening capable of inserting the material accommodating portion, the hopper for supplying the Al material to the material accommodating portion. 3. The method of claim 2,
Wherein the process chamber includes a plurality of evaporation sources arranged in a horizontal direction along the conveyed substrate,
Wherein the horizontal evaporation source unit is capable of scanning in a vertical direction. 3. The method of claim 2,
Wherein the process chamber includes a vertical evaporation source unit in which a plurality of evaporation sources are linearly arranged in the vertical direction,
Wherein the vertical evaporation source unit is capable of scanning in a horizontal direction along the conveyed substrate. 3. The method of claim 2,
Wherein the process chamber includes a vertical evaporation source unit in which a plurality of evaporation sources are linearly arranged in the vertical direction,
Wherein the vertical evaporation source unit is fixed to an inner wall of the process chamber. 3. The method of claim 2,
Wherein the process chamber includes a two-dimensional evaporation source unit in which a plurality of evaporation sources are two-dimensionally arranged in a horizontal direction along the substrate conveyed in the vertical direction. 3. The method of claim 2,
Wherein the process chamber includes a relay chamber and a material supply device disposed in the relay chamber,
The evaporation source has an opening capable of inserting the material accommodating portion, the hopper for supplying the Al material to the material accommodating portion,
Wherein the material supply device supplies the Al material to the hopper inserted into the opening. A crucible,
Wherein the crucible comprises: a material accommodating portion to which a solid Al material is supplied; a melting portion which is adjacent to the material accommodating portion and which heats and melts the Al material supplied from the material accommodating portion to melt the melt; And an evaporating portion adjacent to the melting portion and generating steam by heating the melt supplied from the melting portion. 16. The method of claim 15,
Wherein the crucible is provided with a nozzle for disposing the material receiving portion, the molten portion, and the evaporating portion in a horizontal direction and injecting the vapor to the outside,
The evaporation source
A heater disposed outside the evaporator and heating the evaporator,
A first heat shielding plate disposed on an outer surface of the crucible at a position between the outside and the evaporating unit in the direction of spraying the vapor and for shielding the outside and the evaporating unit from heat;
A second heat shielding plate disposed at a position between the evaporating unit and the melting unit on an outer surface of the crucible, for heat shielding the evaporating unit and the melting unit;
A third heat shielding plate disposed at a position between the melted portion and the material accommodating portion on the outer surface of the crucible for heat shielding the melted portion and the material accommodating portion;
And a reflector disposed on the side of the crucible so as to cover the evaporator, the melted portion, the heater, the first heat shield, the second heat shield, and the third heat shield. 17. The method of claim 16,
And a plurality of the first heat shielding plate, the second heat shielding plate, the third heat shielding plate, and the reflector. 17. The method of claim 16,
Wherein the melted portion is maintained at a temperature at which the saturation vapor pressure of the melt is 0.1 Pa or less by the second heat plate, the third heat plate, and the reflector. 17. The method of claim 16,
And a plate-like member provided between the evaporating portion and the molten portion in the crucible, the plate-like member being disposed below the liquid surface of the melt from the inner wall surface of the upper portion of the crucible. 17. The method of claim 16,
Wherein the material accommodating portion comprises an inclined member for feeding the Al material to the molten portion according to gravity.

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