KR101265067B1 - Linear effusion cell with side orifice array, the method of manufacturing linear effusion cell with side orifice array and evaporator - Google Patents
Linear effusion cell with side orifice array, the method of manufacturing linear effusion cell with side orifice array and evaporator Download PDFInfo
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- KR101265067B1 KR101265067B1 KR1020100054881A KR20100054881A KR101265067B1 KR 101265067 B1 KR101265067 B1 KR 101265067B1 KR 1020100054881 A KR1020100054881 A KR 1020100054881A KR 20100054881 A KR20100054881 A KR 20100054881A KR 101265067 B1 KR101265067 B1 KR 101265067B1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
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- Electroluminescent Light Sources (AREA)
Abstract
The present invention relates to a lateral emission linear evaporator, a method for manufacturing the same and a linear evaporator.
In an evaporation system using a method of heating a crucible in a vacuum and depositing material emitted from the crucible on a substrate, a linear evaporator having a crucible and a heat generating portion and having an outlet formed on the side of the evaporation source, a method of manufacturing the linear evaporation source And a linear evaporator.
In the present invention, a linear evaporator comprising a PBN discharge portion for an evaporator, a heating portion deposited on the outer surface of the discharge portion and patterned to be suitable for heating, and a plurality of discharge holes formed on the side of the discharge portion, a manufacturing method and a linear Evaporator is presented.
Description
The present invention is a linear evaporation source consisting of a crucible and a heating part in an evaporation system such as an organic light emitting diode (OLED) deposition apparatus using a method of heating a crucible in a vacuum and depositing a material emitted from the crucible onto a substrate. A method of manufacturing the linear evaporator and a linear evaporator. More specifically, a heating material is deposited on the outer surface of the emitting part and patterned to be suitable for heating to generate a heating part, a plurality of emitting holes are formed on the side of the emitting part, and the heating part is directly in contact with the heating part by injecting a current. The present invention relates to a linear evaporation source, a method for manufacturing the same, and a linear evaporator, through which a plurality of discharge openings formed on the side of the discharge portion are discharged to the side of the crucible.
Typical methods for forming a thin film on a substrate include physical vapor deposition (PVD), such as vacuum evaporation, ion plating, and sputtering, and chemical vapor deposition by gas reaction. Law). The organic light emitting diode thin film growth apparatus grows a thin film by depositing an organic material constituting the organic light emitting diode on a substrate by a vacuum deposition method. In addition, in order to form an electrode in the organic light emitting diode, a metal such as aluminum is deposited using a vacuum deposition method.
As described above, in a general deposition apparatus for depositing an organic film and a metal film by using a vacuum deposition method, a substrate is mounted on an upper portion of the deposition chamber, and an evaporation source is disposed below the deposition chamber. The evaporation source includes a crucible containing a deposition material, and a heating unit installed outside the crucible and serving as a heat source for evaporating the deposition material. When power is applied to the heat generating part of the evaporation source, the crucible and the material material inside the crucible are heated, and the evaporated material material is discharged to the upper opening of the crucible and is deposited on a substrate mounted on the upper part of the chamber, whereby an organic film or A metal film or the like is formed. In relation to the evaporation source, there is an invention of the “molecular beam evaporation source for heating unit type vacuum thin film deposition, its manufacturing method and evaporator” of the patent application No. 10-2009-114068 filed by the applicant. The invention of the patent application is a crucible made of a PBN for containing the material used in the deposition system for depositing a material such as organic matter in a sample in a vacuum, and by heating by directly depositing the heating portion on the outer surface of the PBN crucible, The present invention relates to a heat generating unit integrated evaporation source that improves thermal efficiency by heating the crucible by conduction and simplifies the structure.
However, the organic light emitting diode substrate has a problem that it is difficult to handle the uniformity of the deposition material because the size is larger and the bending is severe when the substrate is mounted on the top. Therefore, when the large substrate is mounted vertically or at an angle of about 20 degrees or less from the vertical (hereinafter, tilted at an angle of about 20 degrees or less from the vertical is also referred to as vertical) or mounted at the bottom, it is easy to handle without bending. The evaporation source has a problem in that it is not possible to deposit the material material on a substrate mounted vertically or lower because the material material is discharged through the upper opening.
Accordingly, there is a need for the development of a side emission linear evaporator capable of efficiently supplying raw materials to a substrate mounted vertically or underneath.
The present invention is to solve the problems of the prior art, an object of the present invention can be used in a system for depositing a thin film in-line by mounting a substrate vertically, a linear evaporator for releasing material to the side, the linear evaporator To provide a method for producing and a linear evaporator.
As a technical solution for achieving the object of the present invention, the first aspect of the present invention is made of a PBN for containing the material used in the deposition system for depositing a material such as organic matter or metal to the sample in a vacuum A first heat generating portion comprising a crucible, PG deposited on the outer surface of the PBN crucible and suitably heated, and a plurality of discharge openings formed on the side of the crucible through the PBN crucible and the PG first heat generating portion. Including a side emission linear evaporator is provided.
According to a second aspect of the present invention, a crucible made of PBN for holding the material used in a deposition system for depositing a material such as an organic substance on a sample in a vacuum, and an outer surface of the PBN crucible are patterned to be suitable for heating. A first passivation layer comprising a PG deposited to protect the crucible from a sample that is deposited on an inner surface of the PBN crucible and adheres well to PBN, such as aluminum; A side emission type including an insulation portion for electrically insulating the heat generating portion and the first passivation layer, and a plurality of discharge openings formed on the side of the crucible through the PBN crucible, the PG first heat generating portion, and the first passivation layer. Linear evaporators are shown. Some materials, such as aluminum, change from a liquid state to a solid state during cooling, so that they adhere well to the PBN crucible, and thus, when the crucible is cooled, the crucible is damaged due to a difference in thermal expansion coefficient between the sample and the crucible. Since these samples do not adhere well to PG, the problem of crucible breakage can be solved by forming a PG protective film inside the crucible.
According to a third aspect of the present invention, in the invention of the first aspect of the present invention, the PBN cap body for covering the opening of the PBN crucible and PG deposited and patterned on the outer surface of the PBN cap body are suitable for heating. A lateral emission linear evaporation source is provided that includes a second heat generating portion.
According to a fourth aspect of the present invention, in the invention of the second aspect of the present invention, the PBN cap body for covering the opening of the PBN crucible and PG deposited and patterned on the outer surface of the PBN cap body are suitable for heating. A second protective film composed of a second heat generating portion configured to protect the crucible from a sample deposited on an inner surface of the PBN lid and adhered to PBN, such as aluminum, and the second heat generating portion and the second 2 A side emission linear evaporation source is provided that includes an insulation for electrically insulating a protective film.
According to a fifth aspect of the present invention, there is provided an evaporation unit including a crucible made of PBN, a first heating part including PG deposited and patterned on the outer surface of the PBN crucible so as to be suitable for heating, and a discharge part made of PBN. And a second heat generating part including PG deposited and patterned on the outer surface of the PBN emitting part and suitable for heating, and a plurality of discharge holes formed on the side of the emitting part through the PBN emitting part and the PG second heat generating part. A lateral emission linear evaporation source is provided which consists of a discharge portion comprising.
According to a sixth aspect of the present invention, in the fifth aspect of the present invention, the PBN crucible and the PG for protecting the crucible from a sample deposited on the inner surface of the PBN discharge portion and adhered to PBN, such as aluminum, are well adhered. A lateral emission linear evaporation source is provided comprising a protective film.
In a seventh aspect of the present invention, a method of manufacturing the side emission linear evaporator of the first to sixth aspects of the present invention is presented.
In an eighth aspect of the present invention, a linear evaporator is provided which utilizes a power supply electrode as a support when mounting the lateral emission linear evaporator to a vacuum flange.
A ninth aspect of the present invention further includes a spacer (spacer) designed to minimize the contact area in order to prevent the linear evaporator from moving or breaking under force when mounting the lateral emission linear evaporator to a vacuum flange. A linear evaporator is shown.
A tenth aspect of the present invention is a disperser for supplying a uniform current to the heat generating part by dispersing the current while distributing the force at the time of fixing the linear evaporation source and the electrode when the side emission linear evaporation source is mounted on the vacuum flange ( A linear evaporator is further provided that further includes a spreader.
According to the side-emission linear evaporation source of the present invention, in a system in which a substrate is vertically mounted and in-line vacuum deposition, the material is efficiently discharged in the lateral direction, whereby the material can be easily uniformly deposited on a large substrate. It works.
1 is a schematic diagram of a first embodiment of a side emission linear evaporator of the present invention.
Figure 2 is a schematic diagram of a second embodiment of a side emission linear evaporator of the present invention.
Figure 3 is a schematic diagram of a third embodiment of a side emission linear evaporator of the present invention.
Figure 4 is a schematic diagram of a fourth embodiment of a side emission linear evaporator of the present invention.
5 is a block diagram of a conventional evaporator.
Figure 6 is a schematic diagram of an embodiment of a linear evaporator using a side emission linear evaporator of the present invention.
Figure 7 is a schematic diagram of an embodiment of a linear evaporator using the side emission linear evaporator of the present invention with the vacuum flange positioned on top.
8 is a flowchart for explaining a first embodiment of the method for producing a side emission linear evaporator of the present invention.
9 is a flowchart illustrating a second embodiment of the method of manufacturing a side emission linear evaporator of the present invention.
10 is a flowchart illustrating a third embodiment of the method of manufacturing a side emission linear evaporator of the present invention.
11 is a flowchart illustrating a fourth embodiment of the method of manufacturing a side emission linear evaporator of the present invention.
Hereinafter, with reference to the accompanying drawings, the configuration of the invention according to an embodiment of the present invention will be described in detail.
For reference, Figure 5 is a schematic diagram of a conventional general evaporation source. As shown in FIG. 5, the conventional evaporation source includes a crucible 1, a heat shield 2, a
1 is a schematic diagram of a first embodiment of a side emission linear evaporator of the present invention.
As shown in FIG. 1 (A), in a deposition system for depositing a material such as an organic material, a metal, or the like on a sample under vacuum, it is made of PBN (Pyrolytic Boron Nitride) for containing the
When the voltage is applied to the first
FIG. 1B is a schematic diagram of a cross section taken along the line A-A 'in FIG. An example of the form of the first heat generating portion is a heat generation composed of PG having a width of about 0.5 mm or less from the bottom of the side to the top of the side in a direction perpendicular to the discharge port among the sides of the crucible, as shown in the schematic view of the cross section A-A '. It can form by removing a part of part. In such a structure, the resistance in the vicinity of the outlet is increased, so that a temperature distribution in which the temperature in the vicinity of the outlet is higher than that of other parts can be obtained, so that a preferable temperature distribution can be easily obtained with a simple symmetrical pattern.
As in the first embodiment of the present invention, by directly depositing the PG on the outer surface of the
Since the pressure is lowered toward the top of the crucible, the thickness of the material deposited on the substrate can be made uniform by narrowing the gap between the upper discharge holes or by increasing the hole of the upper discharge holes.
It is preferable that the height of the portion where the discharge port is formed is slightly higher than the height of the substrate so that the deposition can be performed on the entire area of the large-area substrate which is deposited inline.
Figure 2 is a schematic diagram of a second embodiment of a side emission linear evaporator of the present invention. As shown in FIG. 2, the
For example, the first insulating
For example, the third insulating
According to the second embodiment of the present invention, when cooling the
Figure 3 is a schematic diagram of a third embodiment of a side emission linear evaporator of the present invention.
As shown in FIG. 3, in a deposition system for depositing a material such as an organic material, a metal, or the like on a sample in a vacuum, a crucible made of PBN (Pyrolytic Boron Nitride) for containing the material 30 ( 10), a first
When voltage is applied to the first
As the pressure is lowered toward the top of the discharge section, the gap between the top discharge port can be made narrower, or the thickness of the material deposited on the substrate can be made uniform by increasing the hole of the upper discharge port.
It is preferable that the height of the portion where the discharge port is formed is slightly higher than the height of the substrate so that the deposition can be performed on the entire area of the large-area substrate which is deposited inline.
Figure 4 is a schematic diagram of a fourth embodiment of a side emission linear evaporator of the present invention.
As shown in FIG. 4, the fourth embodiment of the present invention has the inner surface of the
6 is a schematic diagram of a fifth embodiment of a linear evaporator using the side emission linear evaporator disclosed in Example 4 of the present invention. As shown in Fig. 6A, the side emission type linear evaporation source of the present invention is mounted on a
The linear evaporator is a thermocouple (Thermocouple, which is installed to be in contact with the
Fig. 6B is a schematic view of the spacer of Fig. 6A.
The
Fig. 6C is a schematic diagram of the disperser of Fig. 6A.
The
The disperser is preferably made of graphite. However, it can also be made of a metal such as molybdenum having excellent high temperature characteristics.
7 is a schematic diagram of a sixth embodiment of a linear evaporator using the side emission linear evaporator disclosed in Example 4 of the present invention.
As shown in Fig. 7A, unlike in the fifth embodiment, it is a configuration of a linear evaporator that mounts a vacuum flange on top of the linear evaporator. Therefore, as shown in FIG. 7B, the through-
FIG. 7C is a schematic diagram of the
8 is a flowchart illustrating a first embodiment of a method of manufacturing a side emission linear evaporator of the present invention. As shown in FIG. 8, the method of manufacturing a side-emission linear evaporator of the present invention includes preparing a PBN crucible in a linear evaporator manufacturing method of a vacuum deposition system (S100), and PG on an outer surface of the PBN crucible. Depositing a first heating layer (S110), forming a plurality of discharge holes having a predetermined size in a length direction of the PBN crucible (S120), and the outside of the PBN crucible And forming a pattern (for example, a symmetric pattern) suitable for heating in the first heating layer formed on the surface (S130).
In addition, the method of manufacturing a side emission type linear evaporator of the present invention comprises the steps of preparing a PBN cap body for covering the upper opening of the PBN crucible (S140), and depositing PG on the outer surface of the PBN cap body by a second The method may further include forming a heating layer (S150) and forming a pattern (eg, a symmetric pattern) suitable for heating on the second heating layer formed on the outer surface of the PBN cap body (S160). . The second heating layer is preferably deposited with PG of 1000 micrometers or less in thickness.
9 is a flowchart illustrating a second embodiment of a method of manufacturing a side emission linear evaporator of the present invention. As shown in FIG. 9, according to the second embodiment of the method of manufacturing a side emission linear evaporation source of the present invention, PG is deposited on the inner surface of the PBN crucible and the lower surface of the PBN cap body in the first embodiment. It is characterized by further forming a protective film.
According to a second embodiment of a method of manufacturing a side-emission linear evaporation source of the present invention, in the method of manufacturing a linear evaporation source of a vacuum deposition system, a step of preparing a PBN crucible (S200) and a room of a predetermined size on the side of the PBN crucible Forming a plurality of outlets in the longitudinal direction of the PBN crucible (S210), and depositing PG on the inner and outer surfaces of the PBN crucible to form a first heating layer and an inner surface on the outer surface of the PBN crucible; Forming a protective film (S220), forming a pattern suitable for heating (for example, a symmetrical pattern) on the first heating layer formed on the outer surface of the PBN crucible (S230), and forming the first heating layer and the first heating layer. 1 to form an insulating portion for electrically insulating the protective film (S240).
In addition, the method of producing a side-release linear evaporator of the present invention, covering the PBN crucible, preparing a PBN cap body formed with a discharge port for evaporation (S250), and on the inner and outer surfaces of the PBN cap body Depositing PG to form a second heating layer on the outer surface of the PBN cap body and a second protective film on the inner surface (S260); and suitable for heating on the second heating layer formed on the outer surface of the PBN cap body Forming a pattern (for example, a symmetrical pattern) (S270), and forming an insulating part for electrically insulating the second heating layer and the second passivation layer (S280).
10 is a flowchart illustrating a third embodiment of a method of manufacturing a side emission linear evaporator of the present invention. As shown in FIG. 10, the second embodiment of the method of manufacturing a side emission linear evaporation source of the present invention includes preparing a PBN crucible (S300) and depositing PG on an outer surface of the PBN crucible to generate a first heat generation. Forming a layer (S310), forming a pattern suitable for heating in the first heating layer formed on the outer surface of the PBN crucible (S320), preparing a PBN emitter (S330), and the PBN emission Depositing PG on a negative outer surface to form a second heating layer (S340), forming a pattern suitable for heating on the second heating layer formed on the outer surface of the PBN emission unit (S350), and the PBN Forming a plurality of discharge holes of a predetermined size on the side of the discharge unit (S360).
11 is a flowchart for explaining a fourth embodiment of the method of manufacturing a side-emitting linear evaporator of the present invention. As shown in FIG. 11, the fourth embodiment of the method of manufacturing a side emission linear evaporation source of the present invention includes preparing a PBN crucible (S400) and depositing PG on the inner and outer surfaces of the PBN crucible to form a first method. Forming a heating layer and a first passivation layer (S410), forming a pattern suitable for heating on the first heating layer formed on an outer surface of the PBN crucible (S420), and forming the first heating layer and the first heating layer. Forming an insulating portion for electrically insulating between the protective film (S430), preparing a PBN emitting portion covering the PBN crucible (S440), and forming an ejection opening on a side surface of the PBN emitting portion (S450); Depositing PG on the inner and outer surfaces of the PBN emitter to form a second heating layer on the outer surface of the PBN emitter and a second passivation layer on the inner surface (S460); On the second heating layer Column and a step (S470) and a step (S480) of forming the insulation for electrically insulating the second heating layer and the second protective film to form a suitable pattern.
The technical scope of the present invention regarding the side emission linear evaporator and the manufacturing method of the present invention described above is not limited to the above-described embodiments. Naturally, various predictable embodiments included in the technical idea of the present invention are included. For example, PBN may be further deposited on the outside of the first heat generating unit and the second heat generating unit to protect the heat generating unit applied to the above-described embodiment of the present invention. At this time, the PBN is not deposited on the portion for connection with the power supply electrode. In addition, instead of PG used as a heat generating unit, a material such as tungsten (W), molybdenum (Mo), and titanium (Ti), which can generate high temperature, may be used. In addition, a heat shield may be installed outside the linear evaporator in order to minimize the heat dissipation from the linear evaporator to the vacuum system.
10: PBN Crucible
20: first heating unit
30 material (sample)
40, 240: discharge port
50: PBN lid body
60, 220: second heating unit
70: first protective film
90, 270: Second protective film
80, 100, 110: insulation
300: thermocouple
500a, 500b: spacer
600: power supply electrode
700a, 700b: Spreader
Claims (20)
A pyrolytic boron nitride (PBN) crucible with an open top for containing the material,
A first heating part deposited on an outer surface of the PBN crucible and having a heating pattern formed thereon;
A plurality of side outlets formed through side surfaces of the PBN crucible and the first heating unit;
A first protective film formed on an inner surface of the PBN crucible and a surface of the discharge opening;
A side emission linear evaporation source comprising an insulation for electrically insulating the first heat generating portion and the first passivation layer.
A PBN lid body covering an opening of the PBN crucible,
Side emission linear evaporation source is further deposited on the outer surface of the PBN cap body, the heating element is formed a second heating unit.
And a second passivation layer deposited on a lower surface of the PBN cap body and electrically insulated from the second heat generating unit.
PBN (pyrolytic boron nitride) crucibles for holding materials,
A first heating part deposited on an outer surface of the PBN crucible and having a heating pattern formed thereon;
A PBN emitter composed of PBN,
A second heating part deposited on an outer surface of the PBN emitting part and having a heating pattern formed thereon;
At least one side outlet formed through a side surface of the PBN discharge unit and the second heat generating unit;
A first passivation layer deposited on an inner surface of the PBN crucible and electrically insulated from the first heat generating unit;
And a second passivation layer deposited on an inner surface of the PBN emission unit and a surface of the emission opening and electrically insulated from the second heating unit.
When the current is applied to the first and second heat generating portion, the side emission type linear evaporator, characterized in that configured to maintain the temperature of the second heat generating portion higher than the temperature of the first heat generating portion.
The heat generating part and the protective film is a side emission linear evaporator, characterized in that made of pyrolytic graphite (PG, PG, Pyrolytic Graphite) having a thickness of less than 1000 micrometers.
Side emission type linear evaporator, characterized in that the pattern of the heating portion is symmetrical.
A side emission linear evaporator, characterized in that the spacing of the side outlets located on the upper side is narrower than the spacing of the side outlets located on the lower side to maintain the same deposition rate of the top and bottom.
In order to keep the deposition rate of the upper and lower sides the same, the size of the side outlet located on the upper side is maintained at the lower side while maintaining a constant distance between the side outlet located on the upper side and the side outlet located on the lower side. Lateral emission linear evaporator, characterized in that larger than the size of the side outlet.
Preparing a PBN crucible having an upper side opened,
Depositing PG on an outer surface of the PBN crucible to form a first heating layer;
Forming a plurality of side discharge holes penetrating the side surfaces of the PBN crucible and the first heating layer;
Forming a heating pattern on the first heating layer formed on the outer surface of the PBN crucible;
Depositing PG on the inside of the PBN crucible and on the surface of the side outlet to form a first passivation layer;
And forming an insulating part for electrically insulating the first heating part and the first passivation layer.
Preparing a PBN lid for covering an upper opening of the PBN crucible, depositing PG on an outer surface of the PBN lid and forming a second heating layer;
And forming a heating pattern on the second heating layer formed on the outer surface of the PBN cap body.
Preparing a PBN crucible,
Forming a plurality of outlets on the sides of the PBN crucible,
Depositing PG on the inner and outer surfaces of the PBN crucible to form a first heating layer on an outer surface of the PBN crucible and a first protective film on an inner surface thereof;
Forming a heating pattern on a first heating layer formed on an outer surface of the PBN crucible;
And forming an insulating portion electrically insulating the first heating layer and the first passivation layer.
Covering the PBN crucible, preparing a PBN cap body formed with a discharge port for evaporation,
Depositing PG on the inner and outer surfaces of the PBN lid to form a second heating layer on the outer surface of the PBN lid and a second protective film on the inner surface;
Forming a heating pattern on the second heating layer formed on an outer surface of the PBN lid;
And forming an insulating portion for electrically insulating the second heating layer and the second passivation layer.
Preparing a PBN crucible,
Depositing PG on an outer surface of the PBN crucible to form a first heating layer;
Forming a heating pattern on the first heating layer formed on the outer surface of the PBN crucible;
Preparing a PBN discharge;
Depositing PG on an outer surface of the PBN emission unit to form a second heating layer;
Forming a heating pattern on the second heating layer formed on an outer surface of the PBN emission unit;
Forming at least one side outlet at a side of the PBN outlet;
Depositing PG on an inner surface of the PBN emission unit to form a second passivation layer;
And forming an insulating part for electrically insulating the second heating layer and the second passivation layer.
The linear evaporator includes a vacuum flange and a power supply electrode, wherein the linear evaporator is mounted on the vacuum flange by supporting the power supply electrode as a support.
The power supply electrode is a linear evaporator, characterized in that disposed in a position away from the side outlet formed in the PBN crucible.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100054881A KR101265067B1 (en) | 2010-06-10 | 2010-06-10 | Linear effusion cell with side orifice array, the method of manufacturing linear effusion cell with side orifice array and evaporator |
JP2013514091A JP5732531B2 (en) | 2010-06-10 | 2010-07-30 | Side emission type linear evaporation source, manufacturing method thereof, and linear evaporator |
PCT/KR2010/005031 WO2011155661A1 (en) | 2010-06-10 | 2010-07-30 | Linear effusion cell, method of manufacturing the same and evaporator using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020100054881A KR101265067B1 (en) | 2010-06-10 | 2010-06-10 | Linear effusion cell with side orifice array, the method of manufacturing linear effusion cell with side orifice array and evaporator |
Publications (2)
Publication Number | Publication Date |
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KR20110135138A KR20110135138A (en) | 2011-12-16 |
KR101265067B1 true KR101265067B1 (en) | 2013-05-16 |
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KR1020100054881A KR101265067B1 (en) | 2010-06-10 | 2010-06-10 | Linear effusion cell with side orifice array, the method of manufacturing linear effusion cell with side orifice array and evaporator |
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JP (1) | JP5732531B2 (en) |
KR (1) | KR101265067B1 (en) |
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KR101327732B1 (en) | 2011-12-15 | 2013-11-11 | 현대자동차주식회사 | Thermoelectric generator of vehicle |
KR102285421B1 (en) | 2015-01-26 | 2021-08-04 | 주식회사 만도 | Coil assembly |
KR102154099B1 (en) * | 2015-07-13 | 2020-09-09 | 어플라이드 머티어리얼스, 인코포레이티드 | Evaporation source |
JP6533601B2 (en) * | 2018-02-26 | 2019-06-19 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Evaporation source |
Citations (2)
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JP2004091926A (en) * | 2002-09-03 | 2004-03-25 | Samsung Nec Mobile Display Co Ltd | Heating vessel in organic thin film deposition system |
JP2004197116A (en) * | 2002-12-16 | 2004-07-15 | Ge Speciality Materials Japan Kk | Hearth liner for electron beam deposition |
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JPH0585888A (en) * | 1991-09-24 | 1993-04-06 | Nec Corp | Apparatus for emitting molecular beam |
JPH1053868A (en) * | 1996-08-07 | 1998-02-24 | Kao Corp | Thin film forming device |
DE10256038A1 (en) * | 2002-11-30 | 2004-06-17 | Applied Films Gmbh & Co. Kg | A steamer |
KR20060060994A (en) * | 2004-12-01 | 2006-06-07 | 삼성에스디아이 주식회사 | Deposition source and deposition apparatus therewith |
KR100659762B1 (en) * | 2005-01-17 | 2006-12-19 | 삼성에스디아이 주식회사 | Vapor deposition source and evaporating apparatus and method for deposition using the same |
EP1752555A1 (en) * | 2005-07-28 | 2007-02-14 | Applied Materials GmbH & Co. KG | Vaporizing device |
US8747554B2 (en) * | 2006-06-20 | 2014-06-10 | Momentive Performance Materials Inc. | Multi-piece ceramic crucible and method for making thereof |
US8512806B2 (en) * | 2008-08-12 | 2013-08-20 | Momentive Performance Materials Inc. | Large volume evaporation source |
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- 2010-06-10 KR KR1020100054881A patent/KR101265067B1/en active IP Right Grant
- 2010-07-30 WO PCT/KR2010/005031 patent/WO2011155661A1/en active Application Filing
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Patent Citations (2)
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JP2004091926A (en) * | 2002-09-03 | 2004-03-25 | Samsung Nec Mobile Display Co Ltd | Heating vessel in organic thin film deposition system |
JP2004197116A (en) * | 2002-12-16 | 2004-07-15 | Ge Speciality Materials Japan Kk | Hearth liner for electron beam deposition |
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JP2013529258A (en) | 2013-07-18 |
WO2011155661A1 (en) | 2011-12-15 |
JP5732531B2 (en) | 2015-06-10 |
KR20110135138A (en) | 2011-12-16 |
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