KR101128474B1 - Effusion cell with side orifice, the method of manufacturing effusion cell with side orifice and evaporator - Google Patents

Abstract

The present invention relates to a side emission type evaporation source, a manufacturing method thereof and an evaporator.
In an evaporation system using a method of heating a crucible in a vacuum and depositing material emitted from the crucible onto a substrate, an evaporation source comprising a crucible and a heat generating portion and having an outlet formed on the side of the crucible, a method of manufacturing the evaporation source, and an evaporator It is about.
According to the present invention, a PBN crucible for an evaporator, a heating part deposited on an outer surface of the crucible and patterned to be suitable for heating, a discharge port formed on the side of the crucible, a PBN lid covering an upper portion of the crucible, and An evaporation source, a manufacturing method thereof, and an evaporator including an exothermic portion deposited on an outer surface and patterned for heating, are provided.

Description

Effusion cell with side orifice, the method of manufacturing effusion cell with side orifice and evaporator

The present invention relates to a crucible and a heating part in an evaporation system such as a molecular beam growth apparatus (MBE, Molecular Beam Epitaxy) or an organic light emitting diode deposition apparatus using a method of heating a crucible in a vacuum to deposit a material emitted from the crucible onto a substrate. It relates to a configured evaporation source, a method of manufacturing the evaporation source and an evaporator. More specifically, a heating material is deposited on the outer surface of the crucible and patterned to be suitable for heating to produce a heating part, to create a discharge port on the side of the crucible, to make a lid covering the upper opening of the crucible and to the outer surface of the lid. The heating material is deposited and patterned to be suitable for heating to produce a heat generating portion, and by injecting a current into the heat generating portion, the crucible and the lid directly contacting the heat generating portion are heated to the side of the crucible through the discharge hole formed on the side of the crucible. The present invention relates to an evaporation source from which raw materials are released, a manufacturing method thereof, and an evaporator.

Typical methods for forming a thin film on a substrate include physical vapor deposition (PVD), such as vacuum evaporation, ion plating, and sputtering, and chemical vapor deposition by gas reaction. Law). The molecular beam growth apparatus forms a semiconductor thin film by growing atoms or molecules forming a semiconductor material under ultra high vacuum on a substrate by vacuum deposition. In addition, the organic light emitting diode thin film growth apparatus grows a thin film by depositing an organic material constituting the organic light emitting diode by a vacuum deposition method. In addition, in order to form an electrode in the organic light emitting diode, a metal such as aluminum is deposited using a vacuum deposition method.

As described above, in a general deposition apparatus for depositing an organic film and a metal film by using a vacuum deposition method, a substrate is mounted on an upper portion of the deposition chamber, and an evaporation source is disposed below the deposition chamber. The evaporation source includes a crucible containing a deposition material, and a heating unit installed outside the crucible and serving as a heat source for evaporating the deposition material. When power is applied to the heat generating part of the evaporation source, the crucible and the material material inside the crucible are heated, and the evaporated material material is discharged to the upper opening of the crucible and is deposited on a substrate mounted on the upper part of the chamber, whereby an organic film or A metal film or the like is formed. In relation to the evaporation source, there is an invention of the “molecular beam evaporation source for heating unit type vacuum thin film deposition, its manufacturing method and evaporator” of the patent application No. 10-2009-114068 filed by the applicant. The invention of the patent application is a crucible made of PBN for holding the material used in the deposition system for depositing a material such as organic matter on the sample in a vacuum, and patterned and deposited on the outer surface of the PBN crucible for heating A first passivation layer composed of PG, a first passivation layer composed of PG deposited to protect the crucible from a sample deposited on an inner surface of the PBN crucible and adhered to PBN, such as aluminum, and the first heat generating portion; And an insulating portion for electrically insulating the first passivation film, a PBN lid having a discharge opening for covering an opening of the PBN crucible, a hole corresponding to the discharge opening on an outer surface of the PBN lid and heating. A second heating part composed of PG patterned and deposited to be suitable for the deposition, and a sample deposited on the inner surface of the PBN lid and adhered well to PBN such as aluminum A heat generating unit integrated evaporation source comprising a second protective film made of PG and an insulating portion for electrically insulating the second heat generating portion and the second protective film for protecting the crucible from the crucible.

However, the organic light emitting diode substrate has a problem that it is difficult to handle the uniformity of the deposition material because the size is larger and the bending is severe when the substrate is mounted on the top. Therefore, when the large substrate is mounted vertically or mounted on the bottom, there is no bending and it is easy to handle. The evaporation source has a problem in that it is not possible to deposit the material material on a substrate mounted vertically or lower because the material material is discharged through the upper opening.

Therefore, there is a need for the development of a side emission type evaporation source capable of efficiently supplying raw materials to a substrate mounted vertically or mounted at the bottom.

The present invention is to solve the problems of the prior art, an object of the present invention can be used in a system in which the substrate to be mounted vertically or located in the bottom, the evaporation source for releasing the material to the side, the method of manufacturing the evaporation source And an evaporator.

As a technical solution for achieving the object of the present invention, the first aspect of the present invention is made of a PBN for containing the material used in the deposition system for depositing a material such as organic matter or metal to the sample in a vacuum A crucible, a first heating part including a PG deposited and patterned on the outer surface of the PBN crucible to be suitable for heating, and a discharge hole formed in a side surface of the crucible through the PBN crucible and the PG first heating part Side emission evaporation sources are shown.

According to a second aspect of the present invention, a crucible made of PBN for holding the material used in a deposition system for depositing a material such as an organic substance on a sample in a vacuum, and an outer surface of the PBN crucible are patterned to be suitable for heating. A first passivation layer comprising a PG deposited to protect the crucible from a sample that is deposited on an inner surface of the PBN crucible and adheres well to PBN, such as aluminum; A side emission type evaporation source including an insulation portion for electrically insulating the heat generating portion and the first passivation layer, and a discharge opening formed in a side surface of the crucible through the PBN crucible, the PG first heat generating portion, and the first passivation layer. Presented. Some materials, such as aluminum, change from a liquid state to a solid state during cooling, so that they adhere well to the PBN crucible, and thus, when the crucible is cooled, the crucible is damaged due to a difference in thermal expansion coefficient between the sample and the crucible. Since these samples do not adhere well to PG, the problem of crucible breakage can be solved by forming a PG film inside the crucible.

According to a third aspect of the present invention, in the invention of the first aspect of the present invention, the PBN cap body for covering the opening of the PBN crucible and PG deposited and patterned on the outer surface of the PBN cap body are suitable for heating. A side emission type evaporation source comprising a second heat generating portion is provided. At this time, the heating part should be formed so that the temperature of the lid body is maintained at the same or higher than the temperature of the crucible by adjusting the thickness of the deposited PG or by appropriate patterning.

According to a fourth aspect of the present invention, in the invention of the second aspect of the present invention, the PBN cap body for covering the opening of the PBN crucible and PG deposited and patterned on the outer surface of the PBN cap body are suitable for heating. A second protective film composed of a second heat generating portion configured to protect the crucible from a sample deposited on an inner surface of the PBN lid and adhered to PBN, such as aluminum, and the second heat generating portion and the second A side emission type evaporation source is provided that includes an insulation for electrically insulating a protective film.

In a fifth aspect of the present invention, a method for producing a side emission type evaporation source of the first to fourth aspects of the present invention is presented.

In a sixth aspect of the present invention, an evaporator is provided that utilizes a power supply electrode as a support when mounting the side emission evaporation source to a vacuum flange.

A seventh aspect of the present invention further provides an evaporator further comprising a spacing device (spacer) designed to minimize the contact area in order to prevent the evaporation source from moving or breaking when the side release evaporation source is mounted on the vacuum flange. Is presented.

According to the side emission type evaporation source of the present invention, in a system for vacuum deposition by mounting a substrate vertically or under the substrate, by efficiently discharging the material material in the lateral direction or the lower direction, it can be achieved in the conventional aperture emission type evaporation source. There is an effect that can solve the problem of the side deposition or the bottom deposition that did not exist.

1 is a schematic diagram of a first embodiment of a side emission type evaporation source of the present invention.
2 is a schematic diagram of a second embodiment of a side emission type evaporation source of the present invention.
3 is a schematic diagram of an embodiment of an evaporator using the side emission type evaporation source of the present invention.
4 is a schematic diagram illustrating a spacer of the evaporator of FIG. 3.
5 is a block diagram of a conventional evaporator.
6 is a flowchart for explaining a first embodiment of the method of manufacturing a side emission type evaporation source of the present invention.
7 is a flowchart for explaining a second embodiment of the method for manufacturing a side emission type evaporation source of the present invention.

Hereinafter, with reference to the accompanying drawings, the configuration of the invention according to an embodiment of the present invention will be described in detail.

For reference, Figure 5 is a schematic diagram of a conventional general evaporation source. As shown in FIG. 5, the conventional evaporation source includes a crucible 1, a heat shield 2, a heater 3 installed between the crucible 1 and a heat shield 2, a thermocouple 4, and a lower heat shield. (5), the vacuum flange 6, the power supply electrode 7 and the power connection terminal (8). Since the heating part of the existing general evaporation source surrounds the side of the crucible in an isolated state from the crucible, it is difficult to form a discharge port on the side of the crucible, and the material material is discharged through the upper opening.

1 is a schematic diagram of a first embodiment of a side emission type evaporation source of the present invention.

As shown in FIG. 1 (a), in a deposition system for depositing a material such as an organic material, a metal, or the like on a sample under vacuum, it is made of PBN (Pyrolytic Boron Nitride) for containing the material 30. A first heating unit 20 comprising a PG (Pyrolytic Graphite) pyrolytic graphite (PG) deposited on the outer surface of the PBN crucible 10 and patterned to be suitable for heating, and the PBN crucible 10 ) And a lid body 50 composed of a discharge opening 40 formed on a side surface of the PBN crucible 10 through a PG 20 deposited on an outer surface of the PBN crucible 10, and a PBN covering an opening of the PBN crucible 10. The second heat generating unit 60 is formed of PG deposited by patterning (for example, a symmetrical pattern) suitably for heating so that a magnetic field due to an electric current does not affect the sample on the outer surface of the PBN cap body 50. It includes a configuration.

FIG. 1B is a cross-sectional view A-A in FIG. 1A. As an example of the form of the first heat generating portion 20, as shown in the schematic view of the AA cross section, about 0.5 mm in width from the side bottom to the top side of the side in a direction perpendicular to the discharge port 40 among the sides of the crucible. It can be formed by removing a part (22) 24 of the heat generating portion composed of PG. In this structure, since the resistance near the discharge port 40 is increased, and thus the temperature near the discharge port 40 can be obtained higher than the other parts, a preferable temperature distribution can be obtained with a simple symmetrical pattern.

When the voltage is applied to the first heat generating unit 20 and the second heat generating unit 60, the PBN lid so that the temperature of the PBN lid 50 is maintained at or higher than the temperature of the PBN crucible 10 Adjusting the ratio of the thickness of the second heating unit 60 PG deposited on the sieve 50 and the thickness of the first heating unit 20 PG deposited on the PBN crucible 10 or the pattern of the first and second heating units It is desirable to.

As in the first embodiment of the present invention, by directly depositing the PG on the outer surface of the PBN crucible 10, it is possible to implement an integrated evaporation source to which the first heating unit 20 and the PBN crucible 10 are attached. The outlet 40 may be easily formed on the side of the evaporation source.

2 is a schematic diagram of a second embodiment of a side emission type evaporation source of the present invention. As shown in FIG. 2, the PGN crucible 10 and the inner surface of the PBN cap body 50 and the surface of the outlet 40 of the PGN crucible 10 in the first embodiment are shown in FIG. Deposited to form a protective film. The second embodiment of the present invention, PG deposited on the inner surface of the PBN crucible 10 and the surface of the discharge port 40 to protect the PBN crucible 10 from a sample that is well adhered to the PBN, such as aluminum A first insulating layer 70 having a PG removed to electrically insulate the first heating unit 20 and the first protective layer 70 from the periphery of the discharge opening 40. 80) and a second insulation portion 100 from which PG is removed to electrically insulate the first heat generating portion 20 and the first passivation layer 70 from an upper end of the PBN crucible 10. The PG is removed to electrically insulate the second passivation layer 90 including PG deposited on the inner surface of the PBN cap body 50 and the second heat generating unit 60 and the second passivation layer 90. The third insulating portion 110 is configured to include.

For example, the first insulating part 80 and the second insulating part 100 may be formed by, for example, forming side discharge holes 40 in the PBN crucible 10, and then, inside and outside the PBN crucible 10. The first insulating part 80 and the second insulating part 100 may be formed by depositing PG and removing a portion of the deposited PG so that the first heat generating part 20 and the first passivation layer 70 are electrically insulated. Can be.

For example, the third insulating part 110 may be formed by depositing PG in and out of the PBN cap 50 and electrically insulating the second heat generating part 60 and the second passivation layer 90. The third insulating part 110 may be formed by removing a portion of the deposited PG.

According to the second embodiment of the present invention, when cooling the material 30 adhering to the PBN, such as aluminum, it is possible to prevent the PBN crucible 10 from being damaged by the difference in the coefficient of thermal expansion, thereby rapidly cooling the material. Can be. For example, in a crucible of 500cc or more, if there is no protective film, it takes more than 8 hours to cool down to 100 degrees Celsius at a temperature higher than the melting point of aluminum, which is 660 degrees Celsius. It is possible.

3 is a schematic configuration diagram of an evaporator using the side emission type evaporation source of the present invention. As shown in FIG. 3, the side emission type evaporation source of the present invention may be mounted on a vacuum flange 400 equipped with a power supply electrode 200 and a thermocouple (T / C) electrode 300. . At this time, the power supply electrode 200 is connected to supply power to the first heating unit 20 and the second heating unit 60, the thermocouple electrode 300 is connected to measure the temperature of the evaporation source. do. The structure can be simplified by using the power supply electrode 200 as a support. The electrodes are disposed such that the side discharge holes 40 are located far from the two electrodes so that the power supply electrode 200 does not interfere with the side discharge holes 40.

The evaporator is a spacer 500 installed below the side emission type evaporation source of the present invention, and a thermocouple (T / C) electrode 300 installed to be in contact with the bottom surface first heat generating part 20 of the evaporation source. ), A vacuum flange 400 spaced a predetermined distance from the lower side of the evaporation source, and the first heat generating unit 20 and the spacer 500 passing through the discharge port 40 of the evaporation source therebetween. And a pair of power supply electrodes 200 installed to contact the second heat generating unit 60.

The spacer 500 serves to fix the evaporation source so that the evaporation source does not move and has a structure of minimizing contact with the evaporation source in order to minimize heat loss. 4 is a configuration diagram according to an embodiment of the spacer 500. As shown in FIG. 4, at least one protrusion 520 contacting the evaporation source while minimizing a contact area with the evaporation source, and a through hole 510 formed to penetrate the power supply electrode 200. Doing.

6 is a flowchart illustrating a first embodiment of a method of manufacturing a side emission type evaporation source of the present invention. As shown in FIG. 6, the method of manufacturing a side emission type evaporation source of the present invention includes preparing a PBN crucible (S100) and a micrometer unit on an outer surface of the PBN crucible in an evaporation source manufacturing method of a vacuum deposition system. Depositing PG to form a first heating layer (S110), forming a discharge hole having a predetermined size on a side surface of the PBN crucible (S120), and forming a first heating layer on the outer surface of the PBN crucible. Forming a pattern (for example, a symmetrical pattern) suitable for heating without the magnetic field due to the current affects the sample (S130).

In addition, the method of producing a side emission type evaporation source of the present invention, the step of preparing a PBN cap body for covering the upper opening of the PBN crucible (S140), and depositing PG in micrometer units on the outer surface of the PBN cap body Forming a second heat generating layer (S150) and a pattern suitable for heating without affecting the sample by a magnetic field due to current in the second heat generating layer formed on the outer surface of the PBN cap body (for example, a symmetric pattern) It may further comprise a step (S160) forming. The second heating layer is preferably deposited with PG of 500 micrometers or less.

7 is a flowchart illustrating a second embodiment of a method of manufacturing a side emission type evaporation source of the present invention. As shown in FIG. 7, according to the second embodiment of the method of fabricating the side emission type evaporation source of the present invention, in the first embodiment, PG is deposited on the inner surface of the PBN crucible and the lower surface of the PBN lid body. It characterized in that to further form.

According to a second embodiment of the method of manufacturing a side emission type evaporation source of the present invention, in the method of manufacturing an evaporation source of a vacuum deposition system, preparing a PBN crucible (S200), and a discharge hole having a predetermined size is provided on a side surface of the PBN crucible. Forming (S210) and depositing micrometer-scale PG on the inner and outer surfaces of the PBN crucible to form a first protective layer on the outer surface and the inner surface of the PBN crucible (S220). And forming a pattern (for example, a symmetrical pattern) suitable for heating in the first heating layer formed on the outer surface of the PBN crucible without affecting the sample (S230) and the first heating And forming an insulating portion for electrically insulating the layer and the first passivation layer (S240).

In addition, the method of producing a side emission type evaporation source of the present invention, covering the PBN crucible, and preparing a PBN cap body formed with a discharge port for evaporation (S250), and the micro and the inner and outer surfaces of the PBN cap body Depositing PG in metric units to form a second heating layer on the outer surface of the PBN cap body and a second protective film on the inner surface (S260), and on the second heating layer formed on the outer surface of the PBN cap body Forming a pattern (for example, a symmetrical pattern) suitable for heating without a magnetic field caused by a current (S270), and an insulating portion for electrically insulating the second heating layer and the second protective film Forming step (S280).

The technical scope of the present invention regarding the side emission type evaporation source and the manufacturing method of the present invention described above is not limited to the above-described embodiments. Naturally, various predictable embodiments included in the technical idea of the present invention are included. For example, PBN may be further deposited on the outside of the first heat generating unit and the second heat generating unit to protect the heat generating unit applied to the above-described embodiment of the present invention. At this time, the PBN is not deposited on the portion for connection with the power supply electrode. In addition, instead of PG used as a heat generating unit, a material such as tungsten (W), molybdenum (Mo), and titanium (Ti), which can generate high temperature, may be used.

10: PBN Crucible
20: first heating unit
30 material (sample)
40: discharge port
50: PBN lid body
60: second heating unit
70: first protective film
90: second protective film
80, 100, 110: insulation

Claims (14)

In the evaporation source used in the vacuum deposition system,
PBN (pyrolytic boron nitride) crucibles for holding materials,
A first heat generating part deposited on an outer surface of the PBN crucible and having a heating pattern in which a magnetic field caused by electric current does not affect the sample;
A side discharge port formed through a side surface of the PBN crucible and the first heat generating unit;
A first protective film formed on an inner surface of the PBN crucible and a surface of the discharge opening;
And an insulating part for electrically insulating the first heat generating part and the first passivation layer. delete The method according to claim 1,
A PBN lid body covering an opening of the PBN crucible,
And a second heat generating part deposited on an outer surface of the PBN cap body and having a heating pattern in which a magnetic field generated by an electric current does not affect a sample. The method according to claim 3,
And a second passivation layer deposited on a lower surface of the PBN cap body and electrically insulated from the second heat generating unit. The method according to claim 3,
When the current is applied to the first and second heat generating portion, the temperature of the second heat generating portion is configured to be maintained higher than the temperature of the first heat generating portion side emission type evaporation source. The method according to any one of claims 1 and 3 to 5,
The first heat generating unit and the first passivation layer is a side emission evaporation source, characterized in that made of pyrolytic graphite (PG) of less than 500 micrometers. The method according to any one of claims 1 and 3 to 5,
Side emission type evaporation source, characterized in that the pattern of the heat generating portion is symmetrical. delete delete In the evaporation source manufacturing method of the vacuum deposition system,
Preparing a PBN crucible,
Forming a discharge hole having a predetermined size on a side surface of the PBN crucible;
Depositing micrometer-scale PG on the inner and outer surfaces of the PBN crucible to form a first protective layer on the outer surface and the inner surface of the PBN crucible;
Forming a heating pattern in the first heating layer formed on the outer surface of the PBN crucible so that a magnetic field caused by a current does not affect the sample;
And forming an insulating portion for electrically insulating the first heating layer and the first passivation layer. The method according to claim 10,
Covering the PBN crucible, preparing a PBN cap body formed with a discharge port for evaporation,
Depositing micrometer-scale PG on the inner and outer surfaces of the PBN cap body to form a second heating layer on the outer surface of the PBN cap body and a second protective film on the inner surface;
Forming a heating pattern on the second heating layer formed on the outer surface of the PBN cap body so that a magnetic field caused by a current does not affect a sample;
And forming an insulating part for electrically insulating the second heating layer and the second passivation layer. An evaporator comprising the lateral emission evaporation source of any one of claims 1 to 3. The method of claim 12,
And the evaporator comprises a vacuum flange and a power supply electrode, wherein the evaporation source is mounted on the vacuum flange with the power supply electrode as a support. The method according to claim 13,
The power supply electrode is an evaporator, characterized in that disposed in a position a predetermined distance away from the side outlet formed in the PBN crucible.

Images