TW201413204A - Evaporation source, vacuum vapor deposition device and manufacturing method for organic electroluminescent display device - Google Patents

Abstract

To provide an evaporation source, a vacuum vapor deposition device and a manufacturing method for organic electroluminescent display device for continuously forming film and capable of reducing thermal radiation, using a power-saving evaporation source, high speed forming a metal film, which is mainly made of aluminum material, corresponding to a large substrate. To utilize a ceramic crucible as an evaporation source, and arrange a heat reflective component by clamping a flange section, so as to effectively block heat flowing out along the flange section. Therefore, the present invention can effectively heat the crucible with little electricity, and prevent the flange section from temperature rise.

Description

Evaporation source, vacuum evaporation device, and method of manufacturing organic electroluminescence display device

The invention relates to an evaporation source, a vacuum evaporation device and an organic An electroluminescence display device manufacturing method, in particular, an effective evaporation source, a vacuum vapor deposition device, and an organic electroluminescence display device manufacturing method for forming an organic electroluminescence display device on a large substrate.

An organic EL element used in an organic electroluminescence (EL) display device or an illumination device is a structure in which an organic layer composed of an organic material is sandwiched between an anode and a cathode, and the working principle is Electrons are injected from the cathode side by injecting a positive hole into the organic layer from the anode side by applying a voltage to the electrode, and recombination is performed to emit light.

This organic layer is a structure in which a multilayer film including a positive hole injection layer, a positive hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer is laminated. As the material for forming the organic layer, a polymer material and a low molecular material are used. When a low molecular material is used, an organic thin film is formed using a vacuum evaporation apparatus.

The characteristics of the organic EL device are affected by the film thickness of the organic layer. Big. On the other hand, the substrate on which the organic thin film is formed is enlarged every year. In other words, when a vacuum vapor deposition apparatus is used, it is necessary to control the film thickness of the organic thin film or the electrode metal thin film formed on the large substrate with high precision, and it is necessary to continuously operate for a long time. In order to increase the size of the metal thin film for an electrode, it is necessary to reduce the resistance. In particular, an electrode material (vapor deposition material) which is an upper portion of an organic layer for a display device is most likely to be aluminum, silver or magnesium.

As an evaporation source for continuously forming a thin film on a substrate by vacuum deposition, Patent Document 1 discloses that it is possible to prevent the raw material scattered by the crucible from being entangled and attached to the heater or the like, or to climb the raw material of the inner wall of the crucible. The evaporation source of the fault caused by the phenomenon.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. Hei 9-170882

Patent Document 1 discloses that a heat shield is disposed, which can reduce an evaporation source of a failure caused by adhesion to a heater or the like due to climbing or wraparound of a raw material. However, countermeasures against heat radiation on the substrate side or power saving of heater power are not considered.

The object of the present invention is to provide heat radiation reduction, and the use thereof The evaporation source of the electric power is used to form a metal film which is mainly composed of an aluminum material corresponding to a large substrate, and can be continuously formed into an evaporation source, a vacuum evaporation device, and an organic EL (electroluminescence) display device. method.

The present invention has at least the following features in order to solve the aforementioned object.

The evaporation source of the present invention is characterized in that it includes a crucible for storing an evaporation material, a crucible outlet for discharging a vapor contained in the crucible, and a heat reflecting member provided to surround at least a part of the crucible outlet, and A heater disposed to surround the outer side wall of the crucible.

Further, among the heat reflecting members, the heat reflecting member provided on the heater side may be provided so that a part thereof is located between the crucible body and the heater.

Further, a nozzle for preventing the adhesion of the material to the heat reflecting member may be provided at the port.

Further, the heater may be divided into the aforementioned exit direction and temperature control may be performed individually.

Further, the heat reflecting member may be provided to sandwich the aforementioned flawless space of the aforementioned cymbal.

In addition, the temperature of the crotch portion may be controlled at a temperature of 1100 ° C to 1200 ° C.

Further, the vacuum evaporation apparatus of the present invention is characterized by A film thickness monitor that detects a vapor deposition amount of a substrate generated by the evaporation source by one or more evaporation sources described in any one of the above, and controls the evaporation according to a detection result of the film thickness monitor Source control unit.

Further, the organic electroluminescent display device of the present invention is manufactured Method for manufacturing an organic electroluminescence display device that seals a thin film transistor (TFT) substrate on which a thin film transistor, an organic electroluminescence layer, and an electrode layer sandwiching the organic electroluminescence layer are sealed by a sealing substrate In the vapor deposition chamber of the vacuum vapor deposition apparatus, the TFT substrate on which the thin film transistor is formed is disposed, and one or more of the TFT substrates are placed to form the organic electroluminescent layer or the electrode layer. The evaporation source of the vapor deposition material is formed by depositing the vapor deposition material on the TFT substrate to form the organic electroluminescence (EL) layer.

Further, in the above-described method of manufacturing an organic EL display device, In the vapor deposition chamber, a material supply device for supplying a vapor deposition material to each of the evaporation sources may be provided, and the vapor deposition material may be supplied while maintaining the vacuum state of the vapor deposition chamber.

According to the present invention, by using the evaporation source of the ceramic crucible, the heat reflecting member can be provided by sandwiching the crotch portion, and the heat flowing out along the crotch portion can be effectively blocked, and there is little electric power. Effectively heat the crucible. In addition, it can prevent the temperature of the crotch from rising and prevent climbing.

1‧‧‧Substrate

2‧‧‧Vapor

3, 3A~3E, 3AH~3EH‧‧‧ evaporation source

32‧‧‧坩埚

33a‧‧‧坩埚Ontology

33‧‧‧heater

34‧‧‧锷

35‧‧‧Maintenance components for heaters

36‧‧‧ Front heater

37‧‧‧After heater

38‧‧‧坩埚

39‧‧‧ thermocouple

310‧‧‧Innocent

5‧‧‧vapor deposition chamber

7‧‧‧ film thickness monitor

8‧‧‧ Film thickness control meter

9‧‧‧Evaporation source power supply

10‧‧‧Control computer

11~15‧‧‧ Heat reflecting member

Fig. 1 is a view showing an embodiment of a vertical vacuum vapor deposition apparatus to which an evaporation source of the present invention is vapor-deposited on an upright substrate.

Fig. 2 is a view showing an embodiment of a horizontal vacuum vapor deposition apparatus to which an evaporation source of the present invention is vapor-deposited on a horizontally disposed substrate.

Fig. 3 is a cross-sectional view showing the configuration of an evaporation source according to a first embodiment of the present invention.

Fig. 4 is a cross-sectional view showing the configuration of an evaporation source according to a modification of the first embodiment.

Fig. 5 is a cross-sectional view showing the structure of an evaporation source according to a second embodiment of the present invention.

Fig. 6 is a cross-sectional view showing the configuration of an evaporation source according to a modification of the second embodiment.

Fig. 7 is a cross-sectional view showing the structure of an evaporation source according to a third embodiment of the present invention.

Fig. 8 is a cross-sectional view showing the configuration of an evaporation source according to a modification of the third embodiment.

Fig. 9 is a cross-sectional view showing the configuration of an evaporation source in a fourth embodiment of the present invention.

Fig. 10 is a cross-sectional view showing the configuration of an evaporation source according to a modification of the fourth embodiment.

Figure 11 is a cross-sectional view showing the constitution of an evaporation source according to a fifth embodiment of the present invention. Surface map.

Fig. 12 is a cross-sectional view showing the configuration of an evaporation source according to a modification of the fifth embodiment.

Figure 13 is a graph showing the temperature versus saturation for each vapor deposition material under saturated vapor pressure.

Fig. 14 is a view showing the steps of an example of the production steps of the organic EL display device of the present invention.

Figure 15 is a cross-sectional view showing the evaporation source of the prior art.

In order to prevent wetting or climbing which may become a problem in aluminum vapor deposition, an integrated ceramic crucible structure is used, and a crucible material is made of thermally decomposable boron nitride (PBN) which does not react with an aluminum material. The PBN crucible or the outlet portion is provided with a heat reflecting member to prevent climbing and the substrate temperature from rising, and the vapor deposition can be performed with power saving.

Hereinafter, the contents of the present invention will be described in detail using the embodiments and the drawings.

However, the present invention is not limited to the embodiments described below, and those skilled in the art can also modify or modify the invention according to the spirit and scope of the present invention. Inside.

In the description of the drawings, the same reference numerals will be given to the components having the same functions, and the description will be omitted as much as possible in order to avoid redundancy.

Figure 1 shows the evaporation of vapor-deposited material on an upright substrate. A schematic diagram of one embodiment of a vertical vacuum evaporation apparatus to which the evaporation source of the present invention can be applied. Fig. 2 is a view showing an embodiment of a horizontal vacuum vapor deposition apparatus to which an evaporation source of the present invention is vapor-deposited on a horizontally disposed substrate.

Two vacuum evaporation devices are installed in the vapor deposition chamber 5 and have a base The plate 1, the evaporation source 3, and the film thickness monitor 7 are externally supplied with a power source as shown in the two vacuum evaporation devices, for example, the evaporation source 3.

On the other hand, outside the vapor deposition chamber 5, a film thickness controller 8 for controlling the film thickness, an evaporation source power source 9 for controlling the temperature of the evaporation source, and a film thickness controller 8 linked to the evaporation source power source 9 are provided. The control unit for controlling the vapor deposition data, that is, the control computer 10 is controlled.

In the vertical vacuum vapor deposition apparatus shown in Fig. 1, the substrate 1 and the evaporation source row 32 can be integrally formed on the substrate by changing the relative positions. In the present embodiment, the evaporation source 3 can be arranged in the longitudinal direction in accordance with the desired substrate size, and the evaporation source column 32 can be formed into a film by moving only one of the lateral axes. Further, the evaporation source 3 can be arranged in the lateral direction in accordance with the desired substrate size, and the evaporation source row 32 can be moved only by one of the upper and lower axes, and can be formed into a film. Further, the evaporation source row 32 may be fixed to move the substrate.

The horizontal vacuum vapor deposition apparatus shown in FIG. 2 is a configuration diagram in the case where the horizontal substrate 1 is formed. By changing the relative position of the substrate 1 and the evaporation source row 32, it is possible to form a film on the entire substrate. In the present embodiment, an example in which the evaporation source row 32 is fixed and the substrate is conveyed in a different processing chamber is shown in an in-line manner.

Figure 15 is a cross-sectional view showing the evaporation source of the prior art. The crucible 32 of the former evaporation source 3J is heated by the heater 33. For example, in the case of aluminum, the vapor deposition material 4 is heated to 1200 ° C or higher, and the vapor 2 is discharged from the crucible outlet, and the vapor 2 is discharged to the substrate 1 to form a film. At this time, the heating temperature was monitored by a thermocouple 39 near the bottom of the crucible. By the signal of the film thickness monitor 7, the film formation speed is controlled, and a desired film thickness can be formed.

Hereinafter, the evaporation source of the feature of the present invention will be mainly described.

(Example 1)

Fig. 3 is a cross-sectional view showing the configuration of a first embodiment 3A of the evaporation source of the present invention. The evaporation source 3A is, for example, a Knudsen Cell (hereinafter referred to as a K-cell). The K pool is composed of a crucible 32 made of ceramics (PBN, alumina, carbon material, etc.), a heater 33 for heating the crucible, a thermocouple 19 for controlling the crucible temperature, and a vapor deposition material 4 The material supply device 20 is composed of a heat shield (not shown) that does not leak heat to the outside, and a water-cooled shield. The material supply machine 20 prevents the material from adhering to the material supply machine 20 at the time of vapor deposition by moving to the crucible outlet input material only at the time of supply.

In order to prevent the vapor deposition material 4, that is, the aluminum material from climbing, the evaporation source 3A is reduced in heat radiation, and the purpose of power saving is achieved. In order to release the vapor, a part of the opening is opened, and heat is set so as to sandwich the crotch portion 34 of the crucible 32. Reflecting members 11, 12. By providing the heat reflecting members 11 and 12 in such a manner as to sandwich the crotch portion 34, the heat flowing out along the crotch portion 34 can be effectively blocked. The heating of the crucible can be effected with a small amount of electric power. Further, the heat radiation from the heater is reflected by the heat reflecting member 11, and the temperature of the crotch portion 34 is prevented from rising, so that the substrate temperature rise can be reduced, and the climbing of the vapor deposition material can be prevented from occurring in the cold crotch portion.

4 is a view showing a modification of Embodiment 1, that is, an evaporation source. A cross-sectional view of the structure of 3AH. The evaporation source 3AH differs from the evaporation source 3A in that a plurality of (two in the drawing) heat reflecting members 11, 12 are added. Otherwise, the evaporation source 3AH is the same as the evaporation source 3A. By adding a plurality of heat reflecting members 11 and 12, heat radiation can be further reduced, and the effect of saving power and preventing climbing can be increased.

(Example 2)

Fig. 5 is a cross-sectional view showing the configuration of a second embodiment 3B of the evaporation source of the present invention.

In the first embodiment, in order to reduce the heat radiation, the heat reflecting members 11, 12 are provided in the direction in which the vapor 2 is discharged, that is, the crotch portion 34 of the crucible 32 is sandwiched. In the present embodiment, in order to further promote the effect of preventing the climbing, in addition to the heat reflecting member 11 provided on the heater 33 side, it is additionally disposed in such a manner as to be positioned between the weir body 32a of the non-twist portion 34 and the heater 33. The heat reflecting member 13 reduces heat radiation in the vicinity of the exit of the turn 34 or the weir 32. The heat reflecting members 11 and 13 may also be integral. In this case, the same effect can be obtained when a part of the heat reflecting member is disposed between the crucible body 32a and the heater 33. Further, as the effect illustrated in FIG. 4, the heat reflecting members 11, 12, 13 may also be heavy More than two stacks are arranged.

6 is a view showing a modification of Embodiment 2, that is, an evaporation source. A cross-sectional view of the composition of 3BH. The evaporation source 3BH differs from the evaporation source 3B in that it prevents the influence of heat around the evaporation source 3 on the machine in the vapor deposition chamber 5, or prevents the heat of the heater 33 from escaping to the outside of the evaporation source 3BH, thereby realizing power saving. The heat reflecting members 14, 15 are provided at the periphery. In the present embodiment, the heat reflecting members 14 and 15 are described as being single-only. However, by superimposing two or more, it is possible to improve the heat insulating effect and further reduce the power consumption, thereby realizing the stabilization of the helium temperature.

(Example 3)

Fig. 7 is a cross-sectional view showing the configuration of a third embodiment 3C of the evaporation source of the present invention.

In the first embodiment and the second embodiment, since the heat reflecting member 12 is in contact with the vapor 2 from the outlet of the crucible 32, there is a case where the vapor deposition material adheres to the heat reflecting member 12 to cause a failure. In the present embodiment, in order to solve the aforementioned problem of material adhesion, the nozzle 16 is provided at the outlet of the crucible 32 so that the vapor 2 does not come into contact with the heat reflecting member 12. The nozzle 16 is made of a ceramic material which is not problematic by using a vapor deposition material. For example, when the vapor deposition material is aluminum, in order to prevent breakage, the same PBN material as that of tantalum is used. Other types of ceramic materials such as aluminum nitride or boron nitride composite materials may also be used.

Fig. 8 is a cross-sectional view showing the configuration of an evaporation source 3CH which is a modification of the third embodiment. The evaporation source 3CH is different from the evaporation source 3C It is to prevent the influence of the heat around the evaporation source 3 on the machine in the vapor deposition chamber 5, or to prevent the heat of the heater 33 from escaping to the outside, thereby achieving power saving, and providing the heat reflecting members 14 and 15 at the periphery. . In the present embodiment, the heat reflecting members 14 and 15 are described as being single-only. However, by superimposing two or more, the heat insulating effect can be improved, and power can be further reduced, and the temperature of the helium can be stabilized.

(Example 4)

Fig. 9 is a cross-sectional view showing the configuration of a fourth embodiment 3D of the evaporation source of the present invention.

In the first embodiment to the third embodiment, the heater 33 is one. Set to cover the outer wall of the 坩埚32. In the present embodiment, in order to separately control the temperature of the bottom portion or the outlet portion of the crucible 32, the front heater 36 and the rear heater 37 are divided and disposed as shown in Fig. 9 . In the present embodiment, by separately dividing the temperature of the crucible to be controlled to a desired temperature, it is possible to prevent the adhesion of the climbing or vapor deposition material. Further, 35 is a holding member of the front heater 36 and the rear heater 37.

Figure 10 is a view showing a modification of Embodiment 4, that is, an evaporation source. A cross-sectional view of the composition of 3DH. The evaporation source 3DH differs from the evaporation source 3D in that it prevents the influence of the heat around the evaporation source 3 on the machine in the vapor deposition chamber 5, or prevents the heat of the heater 33 from escaping to the outside, thereby achieving power saving, while surrounding The heat reflecting members 14, 15 are provided. In the present modification, the three heat reflecting members 14 and 15 are provided. However, if one or more are provided, the heat insulating effect can be improved, and power saving can be achieved. Degree of stability.

(Example 5)

Fig. 11 is a cross-sectional view showing the configuration of a fifth embodiment 3E of the evaporation source of the present invention.

In the first embodiment to the fourth embodiment, by 坩埚32 The portion 34 is covered by the heat reflecting members 11, 12, and 13, and the heat flowing out along the crotch portion can be effectively blocked, and the crucible can be efficiently heated with a small amount of electric power. Further, the heat radiation from the heater is reflected by the heat reflecting member 11, and the temperature of the crotch portion 34 can be prevented from rising, and the climbing of the vapor deposition material in the crotch portion 34 can be prevented from occurring.

In the present embodiment, in the case of the 坩埚38 of the flawless 310, Also by providing the heat reflecting members 11, 12, 13, it is possible to prevent the substrate temperature from rising and the vapor deposition material from climbing.

Figure 12 is a view showing a modification of Embodiment 5, that is, an evaporation source. A cross-sectional view of the composition of 3EH. The evaporation source 3EH differs from the evaporation source 3D in that, similarly to the evaporation source 3BH shown in FIG. 6, it is to prevent the influence of heat around the evaporation source on the machine in the vapor deposition chamber 5, or to prevent the heat escape of the heater 33. A cross-sectional view of the case where the heat reflecting members 14 and 15 are provided in the periphery while the power is saved to the outside. In the present invention, the heat reflecting members 14 and 15 are described as being single-only. However, by superimposing two or more, the heat insulating effect can be improved, and power can be further reduced, and the temperature of the helium can be stabilized.

(Example 6)

Fig. 13 is a graph showing the vapor pressure curve of the relationship between the temperature T of the aluminum Al, the silver Ag, and the magnesium Mg and the vapor pressure P.

In the first to fifth embodiments, although the temperature of the crotch portion 34 is not measured, in the present embodiment, the vapor pressure curve shown in Fig. 13 can be used to know the vapor pressure necessary for film formation, for example, the vapor deposition of aluminum material. In order to obtain a vapor pressure of several Pa to several tens of Pa (Pascal), it is necessary to raise the temperature of the vapor deposition material to 1300 ° C to 1400 ° C. In addition, it can be seen that climbing at a temperature of 1200 ° C or more in the crotch occurs remarkably. However, it is known from experiments that the temperature of the crotch portion is 1000 ° C or lower, and the vapor 2 adheres to the crucible wall due to the cooling of the crotch portion. Therefore, by controlling the temperature of the crotch portion 34 between 1100 ° C and 1200 ° C, it is possible to prevent the climbing of the aluminum while forming a film.

(Example 7)

The constitution of the evaporation source is explained in the first to sixth embodiments. In the present embodiment, the evaporation source used in the first to sixth embodiments is used, and the vertical vacuum evaporation apparatus or the horizontal direction is provided as shown in FIG. 1 or FIG. A vacuum evaporation apparatus is used to realize a vacuum evaporation apparatus capable of achieving a desired film formation. In Figs. 1 and 2, an example of a plurality of evaporation sources is provided. However, even if a film is formed on a substrate by one evaporation source, a film having a uniform film thickness can be formed on a large substrate.

(Example 8)

Fig. 14 is a view showing the steps of an example of the production steps of the organic EL display device. In the first to seventh embodiments, only the steps of metal deposition in the production step will be mainly described.

In the step diagram of FIG. 14, a TFT substrate formed with a thin film transistor (TFT) for controlling a current flowing between the organic layer and the organic layer, and a sealing substrate for protecting the organic layer from external moisture are respectively formed in the sealing step/ The sealing steps of the seal hardening step are combined.

In the manufacturing step of the TFT substrate of FIG. 14, the wet type is washed. The clean substrate is dry cleaned. Dry cleaning also includes washing by ultraviolet radiation.

The dry-cleaned TFT substrate is first formed with a TFT. A passivation film and a planarization film are formed on the TFT, and a lower electrode of the organic EL layer is formed thereon. The lower electrode is connected to the drain electrode of the TFT. When the lower electrode is an anode, for example, an ITO (lndium Tinoxide) film is used.

Second, an organic EL layer is formed on the lower electrode (organic Evaporation). The organic EL layer is composed of a plurality of layers. When the lower electrode is an anode, for example, an electric hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer are formed from the lower side. The organic EL layer is thus formed by vapor deposition, and an upper electrode layer is formed thereon. The upper electrode layer is formed by the vacuum vapor deposition apparatus described in Examples 1 to 7, or the organic EL display device manufacturing method.

On the organic EL layer, the respective pixels were common, and an upper electrode (metal vapor deposition) was formed in the form of a cover film by using the evaporation source of any of Examples 1 to 5. When the organic EL display device is a top emission, a transparent electrode such as IZO (registered trademark, In ₂ O ₃ -ZnO) is used for the upper electrode, and a metal film such as aluminum is used for the organic EL display device.

In the sealing substrate charging step of Fig. 14, a desiccant is disposed on the sealing substrate subjected to wet cleaning and dry cleaning. When the organic EL layer is degraded by moisture, a desiccant is used to remove the internal moisture. Various materials can be used for the desiccant, and the method of disposing the desiccant differs depending on whether the organic EL display device is different in top emission or bottom emission.

Thus, the TFT substrate and the sealing substrate which are respectively manufactured, They are combined in the sealing step. A sealing material for sealing the TFT substrate and the sealing substrate is formed on the sealing substrate. After the sealing substrate and the TFT substrate are combined, the sealing portion is irradiated with ultraviolet rays, and the sealing portion is cured to complete the sealing.

The organic EL display device formed in this manner is performed Light check. In the lighting inspection, even when a defect such as a black dot or a white dot is generated, the defect can be corrected, and the organic EL display device is completed.

By the present invention, contamination of foreign matter can be suppressed, and Since the organic EL layer formed of the plurality of layers is formed in a short time, the manufacturing cost of the organic EL display device can be reduced, and the productivity can be improved. Further, since the components of the respective layers of the organic EL layer can be accurately controlled, the reproducibility of characteristics can be improved, and an organic EL display device having high reliability can be manufactured.

(Example 9)

This embodiment is not illustrated, but can be organic in the embodiment 7. In the method of manufacturing an EL display device, a material supply device that supplies a vapor deposition material to the plurality of evaporation sources 3 provided in a plurality of the vapor deposition chambers 5 is provided, and the steam supply can be supplied while maintaining the vacuum chamber in the vapor deposition chamber. Plating material while extending the working time of the evaporation device.

2‧‧‧Vapor

3A‧‧‧ evaporation source

4‧‧‧ evaporation materials

11,12‧‧‧ Heat reflecting member

20‧‧‧Material feeder

32‧‧‧坩埚

33‧‧‧heater

34‧‧‧锷

39‧‧‧ thermocouple

Claims (18)

An evaporation source comprising: a crucible for storing an evaporation material; a crucible outlet for discharging a vapor contained in the crucible evaporation material; and a heat reflection member provided to surround at least a portion of the crucible outlet; A heater disposed in a manner surrounding the outer side wall of the crucible. An evaporation source according to claim 1, wherein among the heat reflecting members, the heat reflecting member provided on the heater side is disposed such that a part thereof is located between the crucible body and the heater. An evaporation source according to claim 1, wherein the nozzle is provided with a nozzle for preventing adhesion of the material to the heat reflecting member. The evaporation source according to any one of claims 1 to 3, wherein the heater is divided in the direction of the exit port, and temperature control is performed individually. The evaporation source according to any one of claims 1 to 3, further comprising a crotch portion provided to surround at least a portion of the crotch outlet, wherein the heat reflecting member is provided to sandwich the crotch portion. For example, in the evaporation source of claim 5, wherein the temperature of the aforementioned crotch portion is controlled from 1100 ° C to 1200 ° C. A vacuum vapor deposition apparatus comprising: one or more evaporation sources described in any one of claims 1 to 3; and a film for detecting a vapor deposition amount of the substrate by the evaporation source The thick monitor, and the control portion of the evaporation source are controlled according to the detection result of the film thickness monitor described above. A vacuum vapor deposition apparatus comprising: one or more evaporation sources described in claim 4, and a film thickness monitor for detecting a vapor deposition amount of the substrate generated by the evaporation source, and The detection result of the film thickness monitor controls the control unit of the evaporation source. A vacuum vapor deposition apparatus comprising: one or more evaporation sources described in claim 5, and a film thickness monitor for detecting a vapor deposition amount of the substrate by the evaporation source, and The detection result of the film thickness monitor controls the control unit of the evaporation source. A vacuum vapor deposition apparatus comprising: one or more evaporation sources described in claim 6 of the patent application scope; A film thickness monitor that detects the vapor deposition amount of the substrate generated by the evaporation source and a control unit that controls the evaporation source according to the detection result of the film thickness monitor. A method of manufacturing an organic electroluminescence (EL) display device for sealing a thin film transistor (TFT) in which a thin film transistor, an organic electroluminescence layer, and an electrode layer sandwiching the organic electroluminescence layer are sealed by a sealing substrate In the method of manufacturing a substrate of an organic electroluminescence display device, the TFT substrate on which the thin film transistor is formed is placed in a vapor deposition chamber of a vacuum vapor deposition apparatus, and one or more TFT substrates are disposed. An evaporation source according to any one of claims 1 to 3, wherein the vapor deposition material for depositing the organic electroluminescent layer or the electrode layer is formed by vapor deposition of the vapor deposition material on the TFT substrate. And forming the aforementioned organic electroluminescence (EL) layer. The method of manufacturing an organic EL display device according to claim 11, wherein the vapor deposition chamber includes a material supply device for supplying the vapor deposition material to each of the evaporation sources, and maintaining a vacuum state of the vapor deposition chamber The vapor deposition material is supplied. A method of manufacturing an organic electroluminescence display device for sealing a thin film transistor (TFT) substrate on which a thin film transistor, an organic electroluminescence layer, and an electrode layer sandwiching the organic electroluminescence layer are sealed by a sealing substrate A method of manufacturing an organic electroluminescence display device, characterized in that the TFT substrate on which the thin film transistor is formed is disposed in a true In the vapor deposition chamber of the air vapor deposition device, one or more vapor deposition materials for accommodating the organic electroluminescence layer or the electrode layer are disposed on the TFT substrate, and the fourth embodiment of the patent application is described in the fourth aspect of the patent application. The evaporation source is formed by vapor-depositing the vapor deposition material on the TFT substrate to form the organic electroluminescence (EL) layer. The method of manufacturing an organic EL display device according to claim 13, wherein the vapor deposition chamber includes a material supply device for supplying the vapor deposition material to each of the evaporation sources, and maintaining a vacuum state of the vapor deposition chamber The vapor deposition material is supplied. A method of manufacturing an organic electroluminescence display device for sealing a thin film transistor (TFT) substrate on which a thin film transistor, an organic electroluminescence layer, and an electrode layer sandwiching the organic electroluminescence layer are sealed by a sealing substrate In the method of manufacturing an organic electroluminescence display device, the TFT substrate on which the thin film transistor is formed is placed in a vapor deposition chamber of a vacuum vapor deposition apparatus, and one or more storage units are provided for the TFT substrate. In the evaporation source according to the fifth aspect of the invention, the vapor deposition material for the organic electroluminescence layer or the electrode layer is formed by vapor deposition of the vapor deposition material on the TFT substrate to form the organic electroluminescence ( EL) layer. The method of producing an organic EL display device according to claim 15, wherein the vapor deposition chamber includes a material supply device for supplying the vapor deposition material to each of the evaporation sources, and maintaining a vacuum state of the vapor deposition chamber. The vapor deposition material is supplied. Method for manufacturing organic electroluminescent display device A method for manufacturing an organic electroluminescence display device in which a sealing substrate is sealed with a thin film transistor (TFT) substrate on which a thin film transistor, an organic electroluminescent layer, and an electrode layer sandwiching the organic electroluminescent layer are formed, and is characterized in that: The TFT substrate on which the thin film transistor is formed is placed in a vapor deposition chamber of a vacuum vapor deposition apparatus, and one or more of the TFT substrates are placed to accommodate the organic electroluminescent layer or the electrode layer. In the evaporation source described in the sixth aspect of the vapor deposition material, the organic electroluminescence (EL) layer is formed by vapor-depositing the vapor deposition material on the TFT substrate. The method of producing an organic EL display device according to claim 17, wherein the vapor deposition chamber includes a material supply device for supplying the vapor deposition material to each of the evaporation sources, and maintaining a vacuum state of the vapor deposition chamber The vapor deposition material is supplied.