JP2013211138A - Evaporation source and vacuum deposition device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an evaporation source in which, even if a vapor deposition material enters the inside of the evaporation source, deterioration of film quality is prevented and hindrance on continuous operation and maintenance is also prevented from occurring, and to provide a vacuum deposition device.SOLUTION: An evaporation source is configured of: a crucible having a nozzle for releasing an evaporated vapor deposition material obtained by heating a sealed vapor deposition material; heating means for heating this crucible; and heat insulation means which is arranged around the crucible and the heating means. Floating vapor deposit collecting means held at low temperature by this heating means is installed between the heat insulation means and the crucible or the heating means, and the heat insulation means is installed between this floating vapor deposit collecting means, and the crucible and the heating means. Furthermore, the evaporation source is used in a vapor deposition device.

Description

  The present invention relates to a vacuum vapor deposition apparatus that heats a vapor deposition material under vacuum to generate vapor deposition particles and forms a film of the vapor deposition material on a substrate.

A general organic electroluminescence element (hereinafter referred to as an organic EL element) will be briefly described.
An organic EL element is one in which a film is formed on a substrate in the order of an anode, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and a cathode, and light is emitted by passing a current between the anode and the cathode. .

  In particular, from the hole transport layer to the electron injection layer, an organic compound or an inorganic compound is formed by vacuum deposition, printing, or coating, and a laminated structure is formed on the anode. Furthermore, a metal film such as magnesium / silver or aluminum is formed on the laminated structure by vacuum deposition or sputtering, and a cathode is provided. In this way, the organic EL element is formed.

An example of a general vacuum deposition method will be described with reference to FIG.
In FIG. 2, the vacuum deposition apparatus 1 includes a vacuum chamber 2, a vacuum pump 3, and an evaporation source 4. The vacuum chamber 2 is a sealed container, in which an evaporation source 4 and a substrate 5 to be deposited are arranged. Further, the inside of the vacuum chamber 2 is evacuated by the vacuum pump 3 because it is necessary to maintain a vacuum degree of 10 ⁻³ to 10 ⁻⁶ Pa when the film is formed on the substrate 5. In the evaporation source 4, the vapor deposition material is heated and vaporized and sprayed onto the substrate 5 to form a film. At this time, in order to increase the size of the substrate 5, film formation is performed by rotating the substrate 5 or moving either the substrate 5 or the evaporation source 4.

  Briefly explaining an example of a general evaporation source structure, a crucible enclosing a vapor deposition material is heated by a heater. Thereby, the vapor deposition material is vaporized, and the gas of the vapor deposition material is discharged upward toward the substrate from the opening provided in the lid of the crucible.

  The crucible described above is composed of a crucible body, an upper lid, and an inner lid. The crucible main body is supported by a structure, and the vapor deposition material is evaporated by being radiantly heated by a heater as a heating means.

  As a result, a film is formed on the substrate disposed above the crucible. In order to control the output of the heater, the bottom temperature of the crucible is measured by a thermocouple. Further, a reflector is installed on the outer peripheral portion of the heater so that the radiant heat from the heater is concentrated in the crucible.

JP 2008-24998 A

  In the above prior art, the majority of the vapor of the vapor deposition material released from the crucible nozzle moves toward the substrate. However, some vapor particles enter the inside of the evaporation source or leak from the gap between the crucible body and the upper lid.

  Vapor particles of the vapor deposition material that have entered the evaporation source concentrate and condense on the low-temperature members inside the evaporation source against members connected to the outside of the reflector, such as structural members, heater terminals, and thermocouples. And precipitate.

  If the vapor deposition material of the organic compound is deposited, the organic vapor deposition is decomposed by receiving heat from the heater for a long time, and impurities that affect the film quality are generated. Further, in the case of a vapor deposition material of an inorganic compound, a member to which the vapor deposition material is attached may stick and it may not be possible to disassemble each member during maintenance. In particular, when a metal material is used as a vapor deposition material, a short circuit may occur between the terminals of the heater. These problems have not been solved by prior art evaporation sources.

  On the other hand, the evaporation source disclosed in Patent Document 1 does not disclose a solution regarding the above-described problem of the deposition material being deposited inside the evaporation source.

  An object of the present invention is to provide an evaporation source and a vacuum evaporation apparatus that prevent deterioration of film quality and prevent troubles in continuous operation and maintenance even when an evaporation material enters the evaporation source.

  In order to achieve the above object, the present invention provides a crucible having a nozzle for heating an enclosed vapor deposition material to discharge the vaporized vapor deposition material, heating means for heating the crucible, the crucible and the crucible In the evaporation source constituted by the heat insulating means arranged around the heating means, a floating deposit collecting means held at a lower temperature than the heating means is provided between the heat insulating means and the crucible or the heating means, and the floating vapor deposition is provided. A heat insulating means is provided between the object collecting means, the crucible and the heating means.

  The heating means may be integrated with the crucible or provided inside the crucible.

  The heating means may generate heat using resistance heating.

  The heating means may be disposed outside the crucible and may use any one of resistance heating, induction heating, and infrared heating.

The heat insulating means may have a shape that covers at least the facing surface of the floating deposit recovery means with respect to the crucible and the heating means.

  In order to achieve the above object, the present invention preferably has a structure in which the heat insulating means is formed by laminating a single plate or a plurality of plates.

  In order to achieve the above object, in the present invention, preferably, the heat insulating means is made of cotton, cloth, or foam formed of one or more of carbon, metal, and ceramic.

  In order to achieve the above object, the present invention preferably has a structure in which the heat insulating means provided between the floating deposit recovery means and the crucible or the heating means has a structure in which a single plate or a plurality of plates are laminated.

  In order to achieve the above object, in the present invention, preferably, the heat insulating means is made of cotton, cloth, or foam formed of one or more of carbon, metal, and ceramic.

  In order to achieve the above object, the present invention preferably provides a detachable cover around the floating deposit collection means, and the cover is cooled at least partially in contact with the cooling means.

  In order to achieve the above object, the present invention preferably provides the floating deposit recovery means other than the surface having the crucible nozzle.

  In order to achieve the above object, the present invention is preferably configured such that the floating deposit recovery device is cooled by a circulating cooling medium.

In order to achieve the above object, preferably, the cooling medium circulates through the wall of the housing itself, and the housing and the floating deposit recovery means are in thermal contact with each other.
Moreover, the structure of this invention for achieving the said objective is a vacuum evaporation system using any of the said evaporation sources.

  ADVANTAGE OF THE INVENTION According to this invention, even if a vapor deposition material enters the inside of an evaporation source, it can provide the vacuum evaporation apparatus and evaporation source which prevent deterioration of film quality and do not produce trouble in continuous operation and a maintenance.

It is the schematic of the basic composition of the evaporation source which concerns on the Example of this invention. It is a schematic block diagram of the film-forming apparatus by general vacuum evaporation. It is a schematic block diagram of the evaporation source which concerns on the Example of this invention. It is a schematic block diagram of the organic EL device manufacturing apparatus which concerns on the Example of this invention. It is a figure which shows the cooling means of the evaporation source which concerns on the other Example of this invention. It is a figure which shows the cooling means of the evaporation source which concerns on the other Example of this invention.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

  The best mode for carrying out the present invention will be described with reference to the drawings.

The outline of the vacuum deposition apparatus according to the embodiment of the present invention will be described with reference to FIG.
In FIG. 2, a vacuum vapor deposition apparatus 1 has a chamber 2 that is a vacuum container, and an evaporation source 4 that emits vapor of a vapor deposition material 21 and a substrate 5 that is a deposition target are disposed therein. During vapor deposition, the inside of the chamber is always evacuated by a vacuum pump 3 connected to the chamber in order to make the degree of vacuum higher than 10 ⁻³ Pa.

  After starting the pressure reduction, the crucible 22 is heated by the heating means 44 of the evaporation source 4. By this heating, the vapor deposition material 21 is evaporated or sublimated, and vapor of the vapor deposition material 21 is generated to form a film on the substrate 5. The substrate 5 used here is a flat plate of glass, ceramic, metal, or organic matter. An anode is formed in advance on the vapor deposition surface of the substrate 5.

The anode is preferably an electrically conductive compound of metal or alloy having a high work function, such as ITO, gold, copper iodide, tin oxide and the like, which has a high hole injection capability.
For example, CuPc or m-MTDATA is used as the hole injection layer. For example, α-NPD, TPD, or PDA is used as the hole transport layer. As the light emitting layer, for example, rubrene, CBP, CDBP, Alq3 is used as a host material, and coumarin 6, Ir (ppy) 3, FIrpic, or the like is used as a dopant material. As the electron transport layer, for example, Alq3, PBD, TAZ, BND, OXD and the like are used. For example, LiF, BCP, strontium, or the like is used as the electron transport layer. As the cathode, Mg—Ag co-deposited film, Al or the like is used.

  The vapor deposition is performed using the evaporation source 4 constituted by the crucible 22, the heating means 44, and the heat insulation means 43. The crucible 22 enclosing the vapor deposition material 21 is heated by the heating means 44 to generate vapor of the vapor deposition material 21. Then, the film is formed by discharging toward the substrate 5 from the nozzle 34 provided in the crucible 22. The crucible 22, the heating means 44, the heat insulating means 43, etc. are accommodated in the housing 27. The heating means 44 only needs to be able to heat the vapor deposition material inside the crucible, and may be inside the crucible. Similarly in the following Examples 2 to 3, the position of the heating means 44 can be set regardless of the inside or outside of the crucible.

  The evaporation source 4 is controlled by providing a thermocouple inside the evaporation source 4 and adjusting the input power to the heating means 44 so that the crucible 22 and its ambient temperature become a predetermined temperature. Alternatively, the rate sensor 26 is provided in a space provided between the evaporation source 4 and the substrate, and the input power of the heating means 44 is set so that the deposition rate per unit time to the rate sensor 26 becomes a predetermined value. You may adjust. Reference numeral 25 denotes a thermocouple. 50 is a terminal.

  To increase the size of the substrate 5, the substrate 5 is rotated and fixed with the evaporation source 4 being displaced from the rotation axis, or either the substrate 5 or the evaporation source 4 is moved in a direction perpendicular to the vapor ejection direction. Particularly in the latter case, the nozzles 34 may be aligned in the width direction of the substrate, and the substrate 5 or the evaporation source 4 may be moved in a direction perpendicular to the alignment direction.

In order to perform deposition on the substrate 5 continuously, a gate valve 6 is provided in the chamber 2 and the processed substrate 5 is moved to another chamber 2 with the vacuum maintained, and the degree of vacuum is also maintained. What is necessary is just to carry in the unprocessed board | substrate 5 as it is.
In this way, the vapor deposition apparatus and the evaporation source are operated. The evaporation source 4 of the present invention can be operated in the same manner as described above.

Hereinafter, the evaporation source of the present invention will be described with reference to FIG.
FIG. 1 is a schematic diagram of a basic configuration of an evaporation source according to an embodiment of the present invention.
Note that all the drawings shown in this embodiment show examples of processing in which the film formation surface of the substrate 5 is directed downward, but the present invention can be applied regardless of the orientation of the film formation surface.

  In FIG. 1, the evaporation source 4 encloses the vapor deposition material 21 and has a crucible 22 having a nozzle 34 for discharging the vapor deposition material 21, and heating means 44 for heating the crucible 22 outside the crucible 22. The heat insulating means 43 is arranged around the crucible 22 and the heating means 44. Further, a cooling means 45 (floating deposit recovery means) is provided between the heat insulating means 43 and the crucible 22 or the heating means 44.

  The cooling means 45 can trap and selectively deposit the material vapor particles that have entered the evaporation source 4. Thereby, precipitation on the surrounding members is reduced to a minimum. The temperature of the cooling means 45 is preferably maintained at a temperature sufficiently lower than the temperature at which the vapor deposition material evaporates, for example, at a temperature below the sublimation point if the vapor deposition material is sublimated and below the melting point if the material is vaporized.

  On the other hand, when the cooling means 45 is installed at the above position, the radiant heat of the crucible 22 or the heating means 44 is remarkably absorbed, so that the temperature of the vapor deposition material in the crucible is lowered and the vapor deposition itself is hindered. In order to prevent this, the heat radiation heat insulating means 46 is provided so that the crucible 22 and the heating means 44 cannot see the cooling means 45 directly.

  The heat radiation heat insulating means 46 may be in close contact with the cooling means 45 or may not be in close contact therewith. The temperature of the outermost surface facing the heating means 44 or the crucible 22 is sufficiently higher than the temperature of the cooling means 45, so long as it does not affect the evaporation of the vapor deposition material 21 in the crucible 22. Further, a structure in which a part of the cooling unit 45 is exposed in the heat insulating unit 43 may be used.

FIG. 3A shows an example used as a resistance heating type heating means 44 (heater 23).
In FIG. 3 (A), if the heating element of the heater 23 is 700 ° C. or lower, it is preferable to use a sheathed heater because the measures for insulation from the surroundings are simple because management becomes easier. When the temperature exceeds 700 ° C., particularly at a temperature of 1000 ° C. or higher, a metal such as Mo, Ta, W, or an alloy thereof is wound around a ceramic frame to constitute a heater. The material of the ceramic frame is preferably a material that is excellent in insulation at a high temperature, such as alumina, SiC, boron nitride, and aluminum nitride. The heater 23 may be configured in a donut shape, or may be divided into two or more parts in the vertical and horizontal directions. The heater 23 may be configured in any way as long as the crucible 22 and the vapor deposition material 21 can be heated without unevenness.

  A crucible 22 is accommodated in the heater 23. In FIG. 3, the crucible 22 and the heater 23 are not in contact with each other. However, the crucible 22 and the heater 23 may be in contact with each other as long as no short circuit or ground fault occurs due to direct or indirect contact.

  As a material of the crucible 22, a metal such as Mo, Ta, W or an alloy containing them is preferable as a metal material. As the ceramic material, alumina, SiC, boron nitride, aluminum nitride and the like are preferable, and other materials such as carbon graphite can be used.

  FIG. 3 shows a so-called reflector 24 in which a plurality of reflectors 48 are separated from each other as an alternative to the heat insulating means 43 shown in FIGS. 1 and 2. The reflector 48 can be made of stainless steel or titanium at 700 ° C. or lower. In a temperature range higher than that, metal materials such as Au, Cu, Mo, Ta, and W and alloys thereof, and ceramic materials such as carbon, alumina, SiC, BN, and AlN can be used. What is necessary is just to keep the function to reflect electromagnetic waves, such as infrared rays which propagate thermal radiation. Therefore, in order to improve the reflectance in the infrared band, the surface of the reflector 48 is preferably mirror-finished, and a metal such as Ag, Au, Cu, or Al may be plated.

  Instead of the reflector 24, at least one sheet of a ceramic plate having a small heat conduction and a high heat resistance temperature or a sheet made of ceramic fibers may be laid. When using a ceramic plate, it is preferable to use a ceramic plate having a low porosity in consideration of evacuation. Moreover, you may use together the reflector 24 shown in FIG. 3, and a heat insulating material.

FIG. 3B shows the shape of the heater 23.
In FIG. 3B, the heater 23a shown in (1) is integrally formed, and the heater 23b shown in (2) is divided into two parts. The proper use of these heaters is selected according to the size of the housing 27 and the size of the substrate 5.

Here, the line configuration for manufacturing the organic EL device will be briefly described with reference to FIG.
FIG. 4 is a schematic configuration diagram of an organic EL device manufacturing apparatus according to an embodiment of the present invention.

  In FIG. 4, the organic EL device manufacturing apparatus 100 of the present invention is configured so that alignment and vapor deposition can be performed in the same vacuum vapor deposition chamber 6. The organic EL device manufacturing apparatus 100 is a cluster in which a polygonal vacuum transfer chamber 7 having a vacuum transfer robot 9 at the center, and a substrate stocker chamber 8 and a vacuum deposition chamber 6 as a film forming chamber are arranged radially around the periphery. Type organic EL device manufacturing apparatus 100. Each vacuum deposition chamber 6 has a substrate holding part 13 for holding a substrate 10 and a mask 12. A gate valve 14 is provided between the vacuum deposition chamber 6 and the substrate stocker chamber 8 and the vacuum transfer chamber 7 to isolate the vacuum from each other. 11 is a vapor deposition source.

  With such a configuration, the vacuum transfer robot 5 takes out the substrate from the substrate stocker chamber 3 and carries it into the substrate holding unit 9 of the vacuum deposition chamber 1. In the vacuum deposition chamber 1, the loaded substrate 6 is directly opposed to the mask 8 by a substrate turning means (not shown), aligned (the substrate and the mask are aligned), and the deposition source 7 is moved up and down. Vapor deposition is performed on the substrate 6. After vapor deposition, the substrate 6 is returned to a horizontal state. Thereafter, the substrate 6 is unloaded from the vacuum deposition chamber 1 by the vacuum transfer robot 2 and is carried into another vacuum deposition chamber 1 or returned to the substrate stocker chamber 3.

  In carrying in and out of the substrate 6 in such processing, the related gate valve 10 is controlled so as not to affect the processing of each vacuum deposition chamber 1.

  As described above, in this embodiment, the cooling means 45 is provided outside the crucible 22 and the heater 23 and is provided inside the region surrounded by the reflector 24. As a result, floating leakage vapor can be concentrated on the cooling means 45, so that it is possible to prevent the above-described adhesion to an extra portion.

  Moreover, since the heat from the heater 23 with respect to the cooling means 45 is interrupted | blocked by the heat insulation means 43, the cooling means 45 is not heated. Therefore, it is possible to collect the leaked steam stably.

FIG. 5 shows details of the cooling means.
FIG. 5 is a view showing a cooling means for an evaporation source according to another embodiment of the present invention.
In FIG. 5, in this embodiment, as the cooling means 45, for example, a stainless steel block 28 is used, and a coolant 52 (oil or water or the like is used as a cooling medium) is circulated from the outside of the reflector 24.

  That is, two coolant circulation holes 52 a that pass through the chamber 2 and the housing 27 are provided, and a U-turn portion 52 b is provided so that the two coolant circulation holes 52 a merge at the cooling block 28. The coolant circulation holes 52a are connected by a pipe 51 so as to be continuous circulation holes.

  In this embodiment, the coolant circulation hole 52a that penetrates the chamber 2, the housing 27, and the cooling block 28 is used. However, the present invention is not limited to this configuration, and the same effect can be obtained even if it is formed of a U-shaped pipe. Needless to say.

  As described above, according to the present embodiment, the coolant 25 is circulated to the cooling block 28, so that the cooling block 28 can always maintain a low temperature state, so that the effect of collecting leaking steam can be enhanced.

  FIG. 6 is a view showing a cooling means for an evaporation source according to another embodiment of the present invention.

  In FIG. 6, the cooling medium is circulated through the cooling block 28 in the second embodiment. However, in this embodiment, a hole is formed in the reflector 24 and connected to or integrated with the external housing 27. When the housing 27 is connected or integrated, only the housing side may be water-cooled.

  That is, if the cooling block 28 is used as it is, the heat radiation of the crucible 22 or the heating means 44 (heater 23) is absorbed, the temperature in the evaporation source is significantly reduced, and vapor deposition is hindered. Therefore, as shown in FIG. 5 or FIG. 6, a radiant heat blocking means 46 is provided on the surface of the cooling block 28 that faces the heating means 44 or the crucible 22. The radiant heat blocking means 46 may be either the reflector 24 or a heat insulating material.

  The temperature of the cooling block 28 is desirably set to a temperature lower than any of the members inside the reflector 24 of the evaporation source 4. Moreover, it is preferable to set the temperature sufficiently lower than the evaporation temperature of the vapor deposition material 21, for example, near the melting point when the vapor deposition material 21 is a molten material, and below the sublimation start temperature when it is a sublimation material. Thereby, the particles of the vapor deposition material 21 entering the evaporation source 4 from the vicinity of the nozzle can be concentrated and deposited on the cooling block 28 instead of the constituent members of the evaporation source 4, such as the thermocouple and the reflector 24. .

  Further, as shown in FIG. 5 or FIG. 6, a deposition preventing plate 29 may be attached to the cooling block 28. It is desirable that the deposition preventing plate 29 is made of a material having good thermal conductivity in contact with the cooling block 28. Further, it is preferable that the outer surface of the deposition preventing plate 29 is roughened by sandblasting or the like so that the deposited vapor deposition material does not fall off. In addition, maintenance can be easily performed by making it possible to easily attach and detach the deposition preventing plate 29.

  In the second embodiment, the U-turn portion 52b of the coolant circulation hole 52a is provided in the cooling block 28. However, in this embodiment, the U-turn portion 52b is provided in the housing 27. Thereby, since the cooling block 28 is indirectly cooled via the housing 27, the coolant circulation hole 52a can be processed relatively easily, and the cost can be reduced.

  As described above, in the present embodiment also, the coolant circulation hole 52a penetrating the chamber 2 and the housing 27 is used. However, the present invention is not limited to this configuration, and the same effect can be obtained by using a U-shaped pipe. It goes without saying that it is obtained.

  As described above, according to the present invention, the cooling unit is provided while being covered with the heat insulating unit, and a portion that is sufficiently lower than the temperature at which the vapor deposition material evaporates or is lower than the melting point of the vapor deposition material is locally applied by the cooling unit. Thus, the vapor deposition material particles that have entered between the crucible / heating means and the heat insulating means are concentrated on the cooling means 45 and deposited.

  Moreover, it becomes possible to suppress the influence of a vapor deposition process by providing a heat insulation means in the part of the cooling means facing the heating means or the crucible.

  Furthermore, adhesion of the vapor deposition material to the terminal of the heating means (heater), the thermocouple, the crucible and the structure supporting the heating means is minimized, and this has conventionally occurred due to the deposition of the vapor deposition material on these members. It is possible to suppress film quality deterioration and troubles in continuous operation or maintenance.

  Further, by attaching a deposition plate made of a material having good thermal conductivity, which can be removed at a portion where the vapor deposition material of the cooling means is deposited, maintenance can be easily performed and performance can be maintained.

1 ... Vacuum deposition equipment, 2 ... Chamber,
3 ... vacuum pump, 4 ... evaporation source,
5 ... Substrate, 6 ... Vacuum evaporation chamber,
7 ... Vacuum transfer chamber, 8 ... Substrate stocker chamber,
9 ... Vacuum transfer robot, 10 ... Substrate,
11 ... evaporation source, 12 ... mask,
13 ... Substrate holding part, 14 ... Gate valve,
21 ... evaporation material, 22 ... crucible,
25 ... Thermocouple, 24 ... Reflector,
26 ... Rate sensor 27 ... Housing,
28 ... Cooling block, 34 ... Nozzle,
43 ... heat insulation means, 44 ... heating means (heater 23),
45 ... Cooling means (floating deposit recovery means),
46 ... thermal radiation insulation means, 50 ... terminal,
51 ... Water-cooled piping, 52 ... Coolant,
52a ... coolant circulation hole, 52b ... U-turn part,
100: Organic EL device manufacturing apparatus.

Claims (14)

By a crucible having a nozzle for heating the encapsulated deposition material and releasing the evaporated deposition material, a heating means for heating the crucible, and a heat insulating means arranged around the crucible and the heating means In the configured evaporation source,
Between the heat insulation means and the crucible or the heating means, provided with a floating deposit recovery means held at a lower temperature than this heating means,
An evaporation source, characterized in that a heat insulating means is provided between the floating deposit collection means and the crucible and the heating means. The evaporation source according to claim 1,
The evaporation source characterized in that the heating means is integrated with the crucible or provided inside the crucible. The evaporation source according to claim 2.
An evaporation source characterized in that the heating means generates heat using resistance heating. The evaporation source according to claim 1,
2. The evaporation source according to claim 1, wherein the heating means is disposed outside the crucible and uses any one of resistance heating, induction heating, and infrared heating. In the evaporation source according to any one of claims 1 to 4,
The evaporation source characterized in that the heat insulating means has a shape covering at least the facing surface of the floating deposit recovery means with respect to the crucible and the heating means. In the evaporation source according to any one of claims 1 to 4,
The evaporation source characterized in that the heat insulating means has a structure in which a single plate or a plurality of plates are laminated. In the evaporation source according to any one of claims 1 to 4,
An evaporation source characterized in that the heat insulating means uses cotton, cloth or foam formed from one or more of carbon, metal and ceramic. In the evaporation source according to any one of claims 1 to 4,
The evaporation source characterized in that the heat insulation means provided between the floating deposit recovery means and the crucible or the heating means has a structure in which a single plate or a plurality of plates are laminated. In the evaporation source according to any one of claims 1 to 4,
An evaporation source characterized in that the heat insulating means uses cotton, cloth or foam formed from one or more of carbon, metal and ceramic. In the evaporation source according to any one of claims 1 to 4,
An evaporation source characterized in that a detachable cover is provided around the floating deposit collection means, and the cover is cooled at least partially in contact with the cooling means. In the evaporation source according to any one of claims 1 to 4,
An evaporation source, wherein the floating deposit recovery means is provided on a surface other than the surface having the nozzle of the crucible. In the evaporation source according to any one of claims 1 to 4,
The evaporation source characterized in that the floating deposit recovery device is cooled by a circulating cooling medium. The evaporation source according to claim 12,
The cooling medium circulates through the housing wall itself,
The evaporation source, wherein the housing and the floating deposit recovery means are in thermal contact. An evaporation source that emits vapor of the vapor deposition material, a substrate that forms a film with the vapor released from the evaporation source, a vacuum chamber that holds the evaporation source and the substrate in a reduced-pressure atmosphere,
In a vacuum deposition apparatus comprising:
The said evaporation source is the evaporation source in any one of Claims 1-13, The vacuum evaporation system characterized by the above-mentioned.

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