KR102192500B1 - Manifold for vacuum evaporation apparatus - Google Patents

Abstract

(assignment)
The present invention improves the utilization efficiency of a vapor deposition material.
(Solution)
A manifold for an in-line vacuum evaporation apparatus, in which a plurality of ejection nozzles 13 having nozzle holes are provided on a substrate facing surface 11a facing the substrate 12 in a single manifold 11 The nozzle rows 14F and 14R are formed so as to protrude with a predetermined nozzle pitch P in the width direction of (12), and the nozzle rows 14F and 14R are determined in the moving direction of the substrate 12. The nozzles 13 for discharging the nozzle rows 14R at the rear are arranged at intervals Lp of the nozzle rows, and the discharging nozzles 13 for the nozzle rows 14F in front of the moving direction of the substrate 12 Were arranged to face the moving direction of the substrate 12.

Description

Manifold for vacuum evaporation equipment {MANIFOLD FOR VACUUM EVAPORATION APPARATUS}

The present invention relates to a manifold for a vacuum evaporation apparatus suitable for manufacturing an organic EL device, in which inline evaporation is performed using a linear source. .

In the in-line evaporation method, a manifold serving as a linear source of the deposited material is arranged along the width direction by facing a substrate to be deposited moving at a constant speed, and the discharge installed in the manifold. Evaporation material is discharged from a nozzle for deposition and deposited on the surface of the substrate to be deposited.

In the vacuum evaporation apparatus of the in-line evaporation method, in Patent Document 1, a manifold for a linear source is used as a crucible for heating and vaporizing the evaporation material, and a plurality of ejection nozzles are provided on the upper surface of the crucible. It is disclosed that the nozzles are formed along the longitudinal direction, and nozzle holes for discharging the evaporation material are respectively formed in each discharging nozzle.

: Japanese Patent No. 4380319 (Fig. 1)

However, it is necessary to increase the utilization efficiency (ratio of deposition amount to evaporation amount) of expensive vapor deposition materials such as organic EL. For this reason, it is conceivable to shorten the evaporation distance between the substrate to be deposited and the substrate to be deposited by bringing the substrate to be deposited and the discharge nozzle closer to each other. When the evaporation distance is shortened, it is necessary to increase the number of nozzle openings to ensure uniformity of the thickness of the deposited film, so that the ejection nozzles approach each other. In addition, the ejection nozzle has an orifice in which the nozzle port narrows the outlet in order to adjust the ejection amount, but if the ratio of the diameter of the nozzle aperture/the inside diameter of the ejection nozzle is not secured, the evaporation material discharged from one ejection nozzle The film thickness distribution does not become constant. Therefore, it is difficult to form by bringing the nozzle orifice closer.

As a countermeasure, it is conceivable to reduce the diameter of the nozzle opening, but when the diameter of the nozzle opening becomes small, the conductance of the discharge passage decreases. Therefore, in order to secure a predetermined deposition rate, the evaporation temperature (heating temperature) of the evaporation material in the crucible must be raised, and when the evaporation temperature rises, it is easy to deteriorate depending on the evaporation material, and running cost. There is a concern that it will lead to an increase in

An object of the present invention is to solve the above problems and provide a manifold for a vacuum deposition apparatus capable of increasing the efficiency of use of a deposition material.

The invention described in claim 1,

A manifold for an in-line vacuum evaporation apparatus that is disposed opposite to the substrate to be deposited moving at a constant speed, and discharges the evaporation material from a plurality of nozzle holes formed on the opposite surfaces to be deposited on the surface of the substrate,

In a single manifold, on the opposite surface of the substrate to be deposited, a plurality of ejection nozzles having the nozzle holes are formed so as to protrude with a predetermined nozzle pitch in the width direction of the substrate to be deposited. , A plurality of rows of the nozzle rows are arranged at predetermined intervals in the moving direction of the substrate to be deposited,

In the moving direction of the substrate to be deposited, a nozzle for discharging the nozzle row at the rear is disposed opposite to the moving direction of the substrate to be deposited with respect to the nozzle for discharging the nozzle row at the front.

The invention described in claim 2,

A manifold for an in-line vacuum deposition apparatus in which a manifold is disposed opposite to the substrate to be deposited moving at a constant speed, and the deposition material is discharged from a plurality of nozzle holes formed in the manifold to adhere to the surface of the substrate to be deposited. ,

A nozzle row is formed in which a plurality of ejection nozzles having nozzle holes are provided on the opposite surface of the substrate to be deposited of a single manifold so as to protrude with a predetermined nozzle pitch in the width direction of the substrate to be deposited. A plurality of nozzle rows are arranged at predetermined intervals in the moving direction of the substrate to be deposited,

It is characterized in that, in the moving direction of the deposited substrate, with respect to the nozzle for discharging the nozzle row at the front, the exposed position for discharging the nozzle row at the rear is arranged at a zigzag position in which 1/2 of the nozzle pitch is shifted.

In the invention described in claim 3, in the configuration described in claim 1 or 2,

If the nozzle pitch of the discharge nozzle in each nozzle row: P, the diameter of the nozzle hole: D', the deposition distance between the nozzle hole and the substrate to be deposited: S,

It is characterized in that D'<P <1.11 × S.

In the invention according to claim 4, in the configuration according to any one of claims 1 to 3,

As for the discharge nozzle, suppose that the nozzle inner diameter: D (mm), the nozzle length: L (mm), and the diameter of the nozzle opening: D'(mm),

In the case of L ≥ 9 × D, D'≤ 2.7 × D ² / L is satisfied,

In the case of L <9 × D, it is characterized in that D'≤ D / 3 is satisfied.

In the invention according to claim 5, in the configuration according to any one of claims 1 to 4,

In accordance with the width of the substrate to be deposited, at least one nozzle row among the plurality of nozzle rows is characterized by attaching a closing plug for closing the nozzle opening of the discharge nozzle on the end side.

According to the invention as set forth in claim 1, by arranging each discharge nozzle in the front and rear nozzle rows opposite to the moving direction of the substrate to be deposited, the deposition rate can be improved compared to when the nozzle rows are arranged in a row. have. Accordingly, even if the conductance of the discharge passage is decreased by reducing the diameter of the nozzle hole, a predetermined deposition rate can be secured by arranging a plurality of rows.

According to the invention according to claim 2, even if a sufficient nozzle pitch is secured for the ejection nozzles in each nozzle row by arranging each ejection nozzle in a zigzag position in the front and rear nozzle rows, the substrate to be deposited is viewed from the front. Discharge nozzles can be arranged in close proximity to each other, thereby improving the uniformity of the deposited film thickness. Accordingly, the evaporation distance between the discharge nozzle and the substrate to be deposited can be shortened, and the utilization efficiency of the material can be improved without deteriorating the uniformity of the deposited film thickness.

According to the invention described in claim 3, when the deposition distance: S, the nozzle pitch of the ejection nozzles in each nozzle row: P is S × 1.11 times or less beyond the diameter of the nozzle opening to within ±5% required as a product. Evaporation can be achieved by realizing film thickness uniformity.

According to the invention described in claim 4, the discharge nozzle satisfies D'≤ 2.7 × D ² / L when L ≥ 9 × D, and D'≤ D / 3 when L <9 × D. By using the discharging nozzle, the diffusion state of the evaporating material discharged from the nozzle port becomes uniform according to the cos ⁿ θ law, thereby improving the uniformity of the deposited film thickness.

According to the invention according to claim 5, when the width of the substrate to be deposited is narrowed, the discharge of useless evaporation material can be suppressed by attaching and closing a closing plug to the nozzle opening of the discharge nozzle on the end side of the nozzle row. Cost can be reduced.

1A to 1C in Fig. 1 show Example 1 of a manifold for a vacuum evaporation apparatus according to the present invention, in which Fig. 1A is a plan view, Fig. 1B is a side view, and Fig. 1C is a front view.
Fig. 2 is a longitudinal sectional view showing a discharge nozzle.
3A and 3B are explanatory diagrams of the deposition film thickness according to the in-line evaporation method, FIG. 3A is a schematic plan view showing the arrangement of the ejection nozzles, and FIG. 3B is a front view showing the film thickness.
Fig. 4 is a front view showing the change in film thickness due to the nozzle pitch of the ejection nozzle. Fig. 4A shows a case of a narrow nozzle pitch and Fig. 4B shows a case of a wide nozzle pitch.
5 is a graph showing a range in which the film thickness uniformity is less than ±5% in the nozzle pitch with respect to the deposition distance.
6 shows the relationship between (length of the discharge nozzle: L) × (diameter of the nozzle mouth: D') / (the inner diameter of the discharge nozzle: D) and the n value of the cos ⁿ θ law in the discharge nozzle. It is a graph.
Fig. 7 is a graph showing the relationship between (diameter of nozzle opening: D') / (inner diameter of ejection nozzle: D) and n value of the cos ⁿ θ law in the discharge nozzle.
Fig. 8 is a plan view showing a second embodiment of the manifold for a vacuum deposition apparatus according to the present invention.
9A to 9C in Fig. 9 show the state of use of the manifold when the width of the substrate is changed. Fig. 9A shows the substrate moving along the center line, and Fig. 9B shows the substrate along the side line. When moved, Fig. 9C shows a longitudinal section of the ejection nozzle with the closed plug mounted.
Fig. 10 is a plan view showing Example 3 of a manifold for a vacuum evaporation apparatus according to the present invention.

(Example 1)

Hereinafter, Example 1 of a manifold for an inline vapor deposition apparatus according to the present invention will be described with reference to FIGS. 1 to 4.

As shown in Figs. 1 and 2, this manifold 11 is a substrate (substrate to be deposited) 12 that is moved at a constant speed in a vacuum deposition chamber maintained in a vacuum state. It is arranged opposite to the surface to be deposited. On the opposite surface 11a of the manifold 11, a plurality of ejection nozzles 13 are installed so as to protrude in the width direction at a predetermined nozzle pitch P. Nozzle rows 14F and 14R are formed on the front and rear sides of the substrate 12 in the moving direction, respectively. Here, the nozzle pitch P is the difference between the nozzle opening 15 and the nozzle opening 15 of the adjacent discharge nozzle 13 in each nozzle row 14F and 14R, as shown in FIG. Say the distance.

The ejection nozzles 13 in the front and rear nozzle rows 14F and 14R are arranged to face the moving direction of the substrate 12. Nozzle openings 15 are formed on the distal end faces of these discharge nozzles 13, respectively. In addition, in order to introduce the evaporation material obtained by heating and evaporation of the evaporation material with a crucible (not shown in the drawing) into the manifold 11, the direction opposite to the discharge nozzle 13 of the manifold 11 A material inlet 16 is formed on the surface, and a material inlet pipe 17 having an inner diameter d is connected.

The front and rear nozzle rows 14F and 14R are disposed at a predetermined distance from the material inlet 16 and disposed at a nozzle row spacing Lp in the moving direction of the substrate 12. The distance between the front and rear nozzle rows 14F and 14R and the material inlet 16 is to prevent the evaporation material supplied from the material inlet 16 from unevenly flowing into the discharge nozzle 13. Further, in the front and rear nozzle rows 14F and 14R, the ejection nozzles 13 at both ends are disposed at positions corresponding to both edge portions of the substrate 12 having a width Ws.

The manifold 11 is formed of a rectangular parallelepiped having a length (Lm), a width (Wm), and a height (Hm) with an internal space through which the evaporated material introduced from the material inlet 16 can be uniformly diffused. , A cooling plate (not shown in the drawing) that blocks radiant heat from the substrate 12 is installed on the substrate facing surface 11a, and prevents adhesion of evaporation material to the left and right sides and the front and rear sides. A heating heater (not shown in the drawing) is installed. Then, the substrate 12 is moved with a predetermined deposition distance S with respect to the nozzle hole 15. Reference numeral 18 denotes a pressure detection port installed on the front side of the manifold 11, and 19 denotes a deposition rate detection port installed on the rear side of the manifold 11. .

As for the discharge nozzle 13, as shown in FIG. 2, a cylindrical nozzle body 13a is erected on the substrate-facing surface 11a of the manifold 11, and the nozzle body 13a A end plate 13b provided with a nozzle hole 15 is attached to the tip end surface of the orifice to form an orifice.

The nozzle pitch (P) of the discharge nozzle 13 in each nozzle row (14F, 14R) is the diameter of the nozzle opening 15: D'(mm), the following equation (1) Is configured to satisfy.

D'<P <1.11 × S… (1) Expression

That is, the disposition of the nozzles 13 for discharging of the in-line manifold 11 generates an infinite number of rows (in theory) for the substrate 12 having an arbitrary substrate width, as shown in Fig. 3A. Thus, assuming that the ejection flow rates from all the ejection nozzles 13 are constant, the film thickness uniformity of this substrate 12 is dependent on the nozzle pitch P of the ejection nozzles 13. As shown in Fig. 3B, the film thickness distribution directly above the arrangement of the discharge nozzles 13 on the substrate 12 is the largest accumulated film thickness deposited directly on the discharge nozzle 13 , Immediately above the midpoint (1/2 P) with the adjacent ejection nozzle 13 becomes the thinnest. In addition, since D'<P, the slit-shaped nozzle hole is not included. And also, if the nozzle pitch (P) is smaller as shown in Fig. 4A maximum film thickness and a high film thickness difference between the minimum film thickness being be ah small, the nozzle pitch (P) is large, the maximum film thickness as shown in Fig. 4B The difference in film thickness between and minimum film thickness becomes large. The film thickness uniformity is expressed by the following equation (2) when the maximum film thickness: dmax and the minimum film thickness: dmin are assumed.

Film thickness uniformity = [(dmax-dmin) / (dmax + dmin)] × 100(%)… (2) Expression

As described above, the film thickness uniformity depends on the nozzle pitch P because it depends on the maximum film thickness and the minimum film thickness. And by making this film thickness uniformity within ±5%, the quality of the product can be maintained.

Fig. 5 shows that when the number of ejection nozzles 13 is unlimited and the same amount of evaporation material is discharged from all ejection nozzles 13, the film thickness uniformity is less than ±5% at the evaporation distance (S). It is a graph showing the maximum value of the nozzle pitch P by simulation.

According to Fig. 5, as shown in Equation (1), by making the nozzle pitch (P) less than 1.11 times the deposition distance (S) beyond D', the film thickness uniformity is within ±5%, which is practical as a product. I can.

Here, as the nozzle pitch P is smaller, the uniformity of the film thickness is improved, but the material utilization efficiency is lowered. For this reason, the continuous shape, that is, the slit shape discharge nozzle 13 in which P≦D' is not included. In addition, in each of the nozzle rows 14F and 14R, the nozzle pitch P is not preferably 20 mm or less due to the mechanical structure. In addition, when the nozzle 13 for discharging the nozzle rows 14F and 14R is arranged in a zigzag arrangement, as in Example 2 to be described later, when the substrate 12 is viewed from the front, it approaches zero infinitely. As a result, it is possible to achieve both uniform film thickness and material utilization efficiency.

As described above, the smaller the nozzle pitch P is, the more uniform the film thickness is, but the material utilization efficiency is lowered. If the uniformity of the film thickness is within ±5%, the nozzle pitch P becomes wider, thereby increasing the utilization efficiency of the material.

Here, in the case of the discharge nozzle 13 as the inner diameter of the nozzle body 13a: D (mm), the nozzle length: L (mm), and the diameter of the nozzle opening 15: D'(mm), the following ( It is composed to satisfy the equation 3).

For L ≥ 9 × D, D'≤ 2.7 × D ² / L

If L <9 × D, then D'≤ D / 3… (3) Expression

The above formula (3) is obtained for an organic material forming an organic EL film. In the case of satisfying Equation (3) above (LD' / D ² in Fig. 6 (in case of L ≥ 9 × D)), the area of 2.7 or less in Fig. 7 (in case of L <9 × D) is D' / D exceeds 0 and is 1/3 or less], the evaporation material emitted from the nozzle hole 15 of each discharge nozzle 13 to the substrate 12 is cos ⁿ θ according to the law of cos ⁿ θ It is approximated to the curve. In this case, since the evaporation material discharged from the nozzle hole 15 of the discharge nozzle 13 is deposited with a sufficient area on the surface (the surface to be deposited) of the substrate 12, the uniformity of the film thickness can be improved. .

As shown in Fig. 6, in the case where L ≥ 9 x D, the value of n is about 4.00 to 4.25 in the region where D'x L / D ² exceeds 0 and is 2.7 or less. As shown in Fig. 7, in the case where L<9×D, D'/D exceeds 0 and is 1/3 or less, the n value is about 4.05 to 4.25. In the law of cos ⁿ θ, as the value of n decreases, the evaporation material is deposited more widely on the surface of the substrate 12, thereby increasing the uniformity of the film thickness. Also, optimally, the n value is preferably about 4.05 to 4.10. In this case, when L ≥ 9 × D shown in Fig. 6, D'× L / D ² is a region of 1.8 beyond 1.1, and shown in Fig. 7 In the case of L <9 × D, D'/ D is an area of 0.18 beyond 0.

Here, as shown in Fig. 6, when D'× L / D ² exceeds 2.7 when L ≥ 9 × D, or when L <9 × D, as shown in Fig. 7, D'/ D is 1/3. If it exceeds, the evaporation material discharged from the nozzle hole 15 of each discharge nozzle 13 to the substrate 12 does not follow the cos ⁿ θ law and is not uniformly deposited on the substrate 12. As a result, the film thickness of the portion of the substrate 12 facing the nozzle hole 15 becomes excessively thick, and uniformity is impaired. In addition, here, the diameter D'of the nozzle hole 15 is set to, for example, 1 mm or more from the viewpoint of processing precision.

According to the first embodiment, nozzle rows 14F and 14R in which ejection nozzles 13 are arranged at a predetermined nozzle pitch P are formed in front and rear of the moving direction of the substrate 12, and each ejection The deposition rate can be improved by disposing the dragon nozzle 13 opposite to the moving direction of the substrate 12. Accordingly, even if the diameter of the nozzle opening 15 is reduced and the conductance of the discharge passage is reduced, a predetermined deposition rate can be secured by arranging a plurality of rows.

In addition, the nozzle pitch (P) of the ejection nozzle (13) in each nozzle row (14F, 14R) exceeds the aperture (D') of the nozzle opening (15) and is less than 1.11 times the deposition distance (S). The film thickness uniformity can be made within ±5% required as a product.

In addition, for each discharge nozzle 13, when L ≥ 9 × D, D'≤ 2.7 × D ² / L is satisfied, and when L <9 × D, D'≤ D / 3 is satisfied. By using the nozzle 13, the diffusion state of the evaporation material discharged from the nozzle hole 15 becomes uniform according to the law of cos ⁿ θ, thereby improving the uniformity of the deposited film thickness.

(Example 2)

8 and 9 show Example 2 of a manifold for a vacuum deposition apparatus. In the second embodiment, the same members as those in the first embodiment are denoted by the same reference numerals, and descriptions thereof are omitted.

In a single manifold 11, a plurality of ejection nozzles 13 having nozzle openings 15 are provided at a predetermined nozzle pitch P in the width direction on the opposite surface 11a of the substrate 12s. Nozzle rows 14F and 14R provided to protrude to) are formed in front and rear sides of the substrate 12s in the moving direction, respectively. The ejection nozzles 13 of the front and rear nozzle rows 14F and 14R are the ejection nozzles 13 of the rear nozzle row 14R with respect to the ejection nozzle 13 of the front nozzle row 14F. ) Is placed in a zigzag position that is shifted from the 1/2P position.

The configuration of the discharge nozzle 13 is the same as that of the first embodiment.

9 shows a state of use when a substrate 12s having a narrow width Wn is formed on a substrate 12 of a normal width: Ws in Example 2. In this case, since the evaporation material discharged from the discharge nozzle 13E at the ends of the nozzle rows 14F and 14R is unnecessarily discharged, as shown in Fig. 9C, the discharge nozzle 13E at the end is Evaporation is performed without evaporating material by attaching a closing plug (21).

In the second embodiment, the number of discharging nozzles 13E in the front nozzle row 14F is less than one discharging nozzle 13 in the rear nozzle row 14R. For example, as shown in Fig. 9A, when the substrate 12s is moved based on the center line CL, the front nozzle row 14F with a large number of discharging nozzles 13 At the end, the closing plugs 21 are attached to the discharge nozzles 13E at both ends, and vapor deposition is performed without discharging the evaporation material. In addition, in the case of moving the substrate 12s based on the side line SL, two ejection nozzles 13E on the opposite side of the side line SL in the front nozzle row 14F, In the rear nozzle row 14R, a closing plug 21 is attached to one discharge nozzle 13E on the opposite side of the side line SL to perform vapor deposition without discharging the evaporation material. Accordingly, even in the case of depositing the narrow substrate 12s, useless evaporation material is prevented from being discharged, thereby improving the utilization efficiency of the evaporation material. Of course, this closing plug 21 can also be mounted on the ejection nozzle 13 of the first embodiment.

According to the second embodiment, nozzle rows 14F and 14R in which the ejection nozzles 13 are disposed at a predetermined nozzle pitch P are formed in front and rear of the moving direction of the substrate 12s, and each ejection By arranging the nozzles 13 in a zigzag shape shifted in the width direction, many nozzle openings 15 can be formed without bringing the ejection nozzles 13 close to each other. Accordingly, the deposition distance between the nozzle hole 15 and the substrate 12s can be shortened, and the uniformity of the deposited film thickness can be maintained, thereby improving the utilization efficiency of the material.

Further, in the case of depositing the narrow substrate 12s, by attaching the closing plug 21 to the discharge nozzle 13E on the end side of the nozzle rows 14F and 14R, unnecessary discharge of the evaporation material is prevented. It can improve the utilization efficiency of evaporation materials.

(Example 3)

Fig. 10 shows Example 3 of a manifold for a vacuum deposition apparatus. The same reference numerals are assigned to the same members as in the previous Examples 1 and 2, and description thereof will be omitted.

The front and rear nozzle rows 14F and 14R are arranged on the substrate-facing surface 11a of this manifold 11, and these nozzle rows 14F and 14R are arranged in front and rear two rows 14Ff, 14Fr, and 14Rf, respectively. , 14Rr). And the discharge nozzle 13 of each of the front heat (14Ff, 14Rf) is 1/2 P in the width direction of the substrate 12 with respect to the discharge nozzle 13 of the rear heat (14Fr, 14Rr). It is placed in a zigzag position.

According to the third embodiment, the same effects as those of the first and second embodiments can be obtained.

11: manifold 11a: facing surface
12, 12s: substrate 13: ejection nozzle
13a: nozzle body 13b: single plate
13E: discharge nozzle 14F, 14R: nozzle row
15: nozzle port 16: material inlet
17: material inlet pipe 18: pressure detection port
19: deposition rate detection port 21: closed plug
D: inner diameter of the nozzle body 13a D': diameter of the nozzle hole 15
L: Nozzle length Lp: Nozzle row spacing
P: Nozzle pitch S: Evaporation distance

Claims (5)

It is disposed opposite to the substrate to be deposited moving at a constant speed, and deposited on the surface of the substrate to be deposited by discharging the evaporation material from a plurality of nozzle holes formed on the opposite surface ( As a manifold for an inline vacuum evaporation device to be used,
In a single manifold, a plurality of ejection nozzles having the nozzle openings are placed on the opposite surface of the substrate to be deposited to set a predetermined nozzle pitch in the width direction of the substrate to be deposited. In addition to forming a nozzle row installed so as to protrude at a distance, a plurality of rows of the nozzle rows are arranged at predetermined intervals in the moving direction of the substrate to be deposited,
In the moving direction of the substrate to be deposited, a nozzle for discharging a nozzle row in the front and a nozzle for discharging a row of nozzles in the rear are arranged opposite to the moving direction of the substrate to be deposited ,
As for the discharge nozzle, suppose that the nozzle inner diameter: D (mm), the nozzle length: L (mm), and the diameter of the nozzle opening: D'(mm),
In the case of L ≥ 9 × D, D'≤ 2.7 × D ² / L is satisfied,
If L <9 × D, satisfying D'≤ D / 3
Manifold for vacuum evaporation equipment characterized by.
A manifold for an in-line vacuum evaporation apparatus that is disposed opposite to the substrate to be deposited moving at a constant speed, and discharges the evaporation material from a plurality of nozzle holes formed on the opposite surfaces to be deposited on the surface of the substrate,
In a single manifold, on the opposite surface of the substrate to be deposited, a plurality of ejection nozzles having nozzle holes are formed so as to protrude at a predetermined nozzle pitch in the width direction of the substrate to be deposited. The nozzle rows are arranged in a plurality of rows at predetermined intervals in the moving direction of the substrate to be deposited,
In the moving direction of the substrate to be deposited, the position of the exposure for discharging the rear nozzle row with respect to the nozzle for discharging the nozzle row in the front is arranged at a zigzag position where 1/2 of the nozzle pitch is shifted ,
As for the discharge nozzle, suppose that the nozzle inner diameter: D (mm), the nozzle length: L (mm), and the diameter of the nozzle opening: D'(mm),
In the case of L ≥ 9 × D, D'≤ 2.7 × D ² / L is satisfied,
If L <9 × D, satisfying D'≤ D / 3
Manifold for vacuum evaporation equipment characterized by.
The method according to claim 1 or 2,
If the nozzle pitch of the discharge nozzle in each nozzle row: P, the aperture of the nozzle port: D', the deposition distance between the nozzle port and the substrate to be deposited: S,
D'<P <1.11 × S
Manifold for vacuum evaporation equipment characterized by.
The method according to claim 1 or 2,
In response to the width of the substrate to be deposited, at least one of the plurality of nozzle rows is provided with a closing plug that closes the nozzle opening of the ejection nozzle on the end side.
Manifold for vacuum evaporation equipment characterized by. delete

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