CN104561903A - Manifold for vacuum evaporation apparatus - Google Patents
Manifold for vacuum evaporation apparatus Download PDFInfo
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- CN104561903A CN104561903A CN201410520985.0A CN201410520985A CN104561903A CN 104561903 A CN104561903 A CN 104561903A CN 201410520985 A CN201410520985 A CN 201410520985A CN 104561903 A CN104561903 A CN 104561903A
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- evaporation
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- 238000007738 vacuum evaporation Methods 0.000 title abstract description 3
- 238000001704 evaporation Methods 0.000 claims abstract description 100
- 239000000463 material Substances 0.000 claims abstract description 94
- 230000008020 evaporation Effects 0.000 claims abstract description 80
- 238000001771 vacuum deposition Methods 0.000 claims description 26
- 238000000151 deposition Methods 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 abstract description 45
- 239000007921 spray Substances 0.000 abstract description 11
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 201000007094 prostatitis Diseases 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides a manifold for a vacuum evaporation apparatus, and use rate of evaporation materials can be increased. The manifold is an online type structure. Spray nozzle lines (14F, 14R) are arranged on a substrate opposite face (11a) opposite to a substrate (12) of a single manifold (11). A spurting-out nozzle (13) with multiple spray nozzles are arranged on the nozzle lines (14F, 14R) in a protruding manner along the width direction the substrate (12) at a regulated nozzle interval (P). The nozzle lines (14F, 14R) are disposed in the moving direction of the substrate (12) at a regulated nozzle line interval (Lp). The spurting-out nozzle (13) of the nozzle line (14R) behind the moving direction of the substrate (12) is arranged opposite to the spurting-out nozzle (13) of the nozzle line (14F) in front of the moving direction of substrate (12) in the moving direction of the substrate (12).
Description
Technical field
The present invention relates to the vacuum deposition apparatus menifold that one is applicable to the manufacture of organic EL (electroluminescent) element, use linear sources to carry out online (Inline) evaporation.
Background technology
Online evaporation mode makes as by the menifold of the linear sources of deposition material, in the width direction with being oppositely disposed by evaporation base material with fixed speed movement, and spray evaporating materials from the ejection nozzle be arranged on this menifold, evaporating materials is attached to by the surface of evaporation base material.
In the vacuum deposition apparatus of online evaporation mode, patent documentation 1 discloses as lower device: using linear sources menifold as the crucible being used for heating deposition material and being vaporized, the upper surface of crucible is formed with multiple ejection nozzle along the long side direction of crucible, and is formed with the jet hole for spraying deposition material respectively on each ejection nozzle.
Patent documentation 1: No. 4380319th, Japanese patent gazette (Fig. 1)
But, the utilising efficiency (adhesion amount is relative to the ratio of steam output) of the deposition materials such as high organic EL that need to improve price.Therefore, can consider to make ejection nozzle close by evaporation base material, thus the jet hole as throttle orifice and the evaporation distance by evaporation base material are shortened.When making evaporation distance shorten, in order to ensure the homogeneity of attachment thickness, needing to increase jet hole, thus causing ejection nozzle close to each other.In addition, in order to adjust spray volume, the jet hole of ejection nozzle becomes the throttle orifice that outlet is drawn in, but if the ratio of the bore of jet hole/ejection nozzle inside diameter is not ensured more than certain value, then the film thickness distribution instability of deposition material spray with nozzle from an ejection.Therefore, be difficult to make jet hole close to arranging.
As countermeasure, the bore of jet hole can be made to diminish, but if make the bore of jet hole diminish, then the conductivity spraying runner diminish.Therefore, in order to ensure the evaporation rate of regulation, the vaporization temperature (Heating temperature) of the deposition material in crucible must be improved, but if improve vaporization temperature, then some deposition material is easily deteriorated, and likely increases running cost.
Summary of the invention
In order to solve the problem, the object of the present invention is to provide the vacuum deposition apparatus menifold of the utilising efficiency that can improve deposition material.
The invention of mode 1 provides a kind of vacuum deposition apparatus menifold, for inline process type vacuum deposition apparatus menifold, with being oppositely disposed by evaporation base material with fixed speed movement, from the multiple jet hole ejection deposition materials be arranged on opposed faces, and make described deposition material be attached to by the surface of evaporation base material, wherein, the opposed faces relative with by evaporation base material of single menifold is provided with nozzle rows, described nozzle rows is along the projecting multiple ejection nozzle with described jet hole of injector spacing being separated regulation by the width of evaporation base material, and nozzle rows described in multiple row is along being separated predetermined distance configuration by the travel direction of evaporation base material, be oppositely disposed by the travel direction of evaporation base material by the ejection nozzle of the nozzle rows at the ejection nozzle of the nozzle rows in evaporation base material moving direction front and rear.
The invention of mode 2 provides a kind of vacuum deposition apparatus menifold, for inline process type vacuum deposition apparatus menifold, with relatively configured menifold with fixed speed movement by evaporation base material, from the multiple jet hole ejection deposition materials be arranged on menifold, and make described deposition material be attached to by the surface of evaporation base material, wherein, the opposed faces relative with by evaporation base material of single menifold is provided with nozzle rows, described nozzle rows is along the projecting multiple ejection nozzle with jet hole of injector spacing being separated regulation by the width of evaporation base material, and nozzle rows described in multiple row is along being separated predetermined distance configuration by the travel direction of evaporation base material, relative to by the ejection nozzle of the nozzle rows in evaporation base material moving direction front, the ejection nozzle arrangement of the nozzle rows at rear is on the staggered position of skew 1/2 injector spacing.
On the basis of the structure that the invention of mode 3 is recorded in mode 1 or 2, when the injector spacing of the ejection nozzle of each nozzle rows be P, the bore of jet hole be D ', jet hole and by the evaporation of evaporation base material distance for S time, D ' < P < 1.11 × S.
On the basis of invention structure that any one is recorded in mode 1 to 3 of mode 4, when the nozzle inside diameter of ejection nozzle be D (mm), nozzle length is L (mm), the bore of jet hole is D ' (mm) time, ejection nozzle in L>=9 × D time meet D '≤2.7 × D
2/ L, and meet D '≤D/3 when L < 9 × D.
On the basis of invention structure that any one is recorded in mode 1 to 4 of mode 5, corresponding with by the width of evaporation base material, at least one nozzle rows in multiple nozzle rows is provided with closing plug, the jet hole of the ejection nozzle of described closing plug closed end side.
According to the invention described in mode 1, be oppositely disposed by the travel direction of evaporation base material by each ejection nozzle of the nozzle rows by front and rear, compared with nozzle rows being configured to the situation of row, evaporation rate can be being improved.Thus, even if reduced by the bore of jet hole and make the conductivity of ejection runner diminish, the evaporation rate of regulation also can be guaranteed by configuration multiple row.
According to the invention described in mode 2, by each ejection nozzle arrangement of the nozzle rows by front and rear on staggered position, even if make ejection nozzle guarantee enough injector spacings in each nozzle rows, also front can be made to observe by the ejection nozzle configuration close to each other during evaporation base material, thus improve the homogeneity of attachment thickness.Thus, ejection nozzle can be made and shortened by the evaporation distance of evaporation base material, and the homogeneity of attachment thickness can not be deteriorated, thus the utilising efficiency of material can be improved.
According to the invention described in mode 3, if evaporation distance is S, then be greater than the bore of jet hole by the injector spacing P of the ejection nozzle making each nozzle rows and be less than S × 1.11, can realize as required for product ± 5% within film uniformity to carry out evaporation.
According to the invention described in mode 4, when ejection nozzle is by being used in L>=9 × D, meet D '≤2.7 × D
2/ L and meet the ejection nozzle of D '≤D/3 when L < 9 × D, from the disperse state of the evaporating materials of jet hole ejection according to cos
nθ rule and become uniform state, thus the homogeneity that can improve attachment thickness.
According to the invention described in mode 5, when by the narrowed width of evaporation base material, the jet hole by the ejection nozzle of the end side in nozzle rows install closing plug and is closed, can suppress unnecessarily to spray evaporating materials, thus can running cost be reduced.
Accompanying drawing explanation
Figure 1A ~ Fig. 1 C represents that the embodiment 1, Figure 1A of vacuum deposition apparatus menifold of the present invention is vertical view, and Figure 1B is side-view, and Fig. 1 C is front view.
Fig. 2 is the skiagraph representing ejection nozzle.
Fig. 3 A, Fig. 3 B are the explanatory views of the evaporation thickness of the evaporation utilizing online evaporation mode to carry out, and Fig. 3 A is the schematic top of the configuration representing ejection nozzle, and Fig. 3 B is the front view representing thickness.
Fig. 4 is the front view representing the Thickness Variation that the injector spacing because of ejection nozzle produces, and Fig. 4 A represents the situation of narrow and small injector spacing, and Fig. 4 B represents the situation of wide injector spacing.
Fig. 5 be represent make film uniformity be less than ± injector spacing of 5% is relative to the coordinate diagram of the scope of evaporation distance.
Fig. 6 represents in ejection nozzle, (the length L of ejection nozzle) × (the bore D ' of jet hole)/(nozzle inside diameter D is used in ejection) and cos
nthe coordinate diagram of relation between the n value of θ rule.
Fig. 7 represents in ejection nozzle, (the bore D ' of jet hole)/(nozzle inside diameter D is used in ejection) and cos
nthe coordinate diagram of relation between the n value of θ rule.
Fig. 8 is the vertical view of the embodiment 2 representing vacuum deposition apparatus menifold of the present invention.
The using state of menifold when Fig. 9 A ~ Fig. 9 C represents that substrate width changes, Fig. 9 A represents the situation of substrate centrally line movement, and Fig. 9 B represents the situation of substrate along side line movement, and Fig. 9 C represents the longitudinal section of the ejection nozzle being provided with closing plug state.
Figure 10 is the vertical view of the embodiment 3 representing vacuum deposition apparatus menifold of the present invention.
Embodiment
[embodiment 1]
Below based on Fig. 1 ~ Fig. 4, the embodiment 1 of the vacuum deposition apparatus menifold of online evaporation mode of the present invention is described.
As shown in Figure 1 and Figure 2, indoor in the vacuum evaporation remaining vacuum state, above-mentioned menifold 11 be oppositely disposed with the vapor deposited surface of the substrate of fixed speed movement (by evaporation base material) 12.On the opposed faces 11a of menifold 11, respectively the front of substrate 12 travel direction and rear are provided with nozzle rows 14F, 14R, multiple ejection nozzles 13 of said nozzle row 14F, 14R are projecting with the injector spacing P of regulation in the width direction.At this, as shown in Figure 2, injector spacing P refers to the jet hole 15 of ejection nozzle 13 adjacent in each nozzle rows 14F, 14R and the distance of jet hole 15.
The nozzle rows 14F at front and rear, the ejection nozzle 13 of 14R are oppositely disposed on the travel direction of substrate 12.The front end face of above-mentioned ejection nozzle 13 is formed with jet hole 15 respectively.In addition, the evaporating materials obtained to carry out heating evaporation by crucible (not shown) to deposition material imports in menifold 11, the opposing face contrary with ejection nozzle 13 of menifold 11 is formed with material introducing port 16, and material introducing port 16 and internal diameter are that the material ingress pipe 17 of d is connected.
The nozzle rows 14F at front and rear, 14R are configured to the distance separating regulation with material introducing port 16, and are configured to further on the travel direction of substrate 12, separate nozzle rows interval Lp.Nozzle rows 14F, the 14R of front and back and the distance of material introducing port 16 are to make the evaporating materials supplied from material introducing port 16 import ejection nozzle 13 equably.In addition, the ejection nozzle 13 at the both ends in nozzle rows 14F, the 14R of front and back is configured on the position corresponding with the edge, both sides of the substrate 12 of width Ws.
Menifold 11 has the internal space that the evaporating materials imported from material introducing port 16 can be made evenly to spread, this menifold 11 forms that anterior-posterior length is Lm, width is Wm, is highly the rectangular parallelepiped of Hm, and on substrate opposed faces 11a, be provided with the photothermal cooling plate (not shown) blocked from substrate 12, left and right side and front and back sides are provided with the well heater (not shown) of the material attachment that avoids evaporating.Further, the evaporation distance S that substrate 12 separates regulation relative to jet hole 15 moves.Pressure detection mouth 18 is arranged on the leading flank of menifold 11, and evaporation rate detects the trailing flank that mouth 19 is arranged on menifold 11.
As shown in Figure 2, the nozzle body 13a of the cylindrical shape of ejection nozzle 13 is uprightly arranged on the substrate opposed faces 11a of menifold 11, on the front end face of nozzle body 13a, installs the end plate 13b with jet hole 15 to form throttle orifice.
If the bore of jet hole 15 is D ' (mm), then the injector spacing P of the described ejection nozzle 13 of each nozzle rows 14F, 14R meets following formula (1).
D ' < P < 1.11 × S ... formula (1)
Namely, the ejection of inline process type menifold 11 with the configuration of nozzle 13 as shown in Figure 3A, relative to the deposited substrate 12 with any substrate width, (in theory) row of limitless number are become, when supposing to fix from the ejection flow of whole ejection nozzle 13, the film uniformity of above-mentioned deposited substrate 12 is relevant to the injector spacing P of ejection nozzle 13.As shown in Figure 3 B, as follows to the film thickness distribution of deposited substrate 12 evaporation directly over the arrangement of ejection nozzle 13: the accumulative thickness carrying out evaporation directly over ejection nozzle 13 is the thickest, the top of the intermediate point (1/2P) of adjacent ejection nozzle 13 is the thinnest.In addition, at this due to D ' < P, so do not comprise the jet hole of slit-shaped.Further, as shown in Figure 4 A, if injector spacing P is little, then the film thickness difference of maximum film thickness and minimum thickness diminishes, and as shown in Figure 4 B, if injector spacing P is large, then the film thickness difference of maximum film thickness and minimum thickness becomes large.When maximum film thickness be dmax, minimum thickness be dmin time, utilize following formula (2) to represent film uniformity.
Film uniformity=[(dmax-dmin)/(dmax+dmin)] × 100 (%) ... formula (2)
So, because film uniformity is relevant to maximum film thickness and minimum thickness, so relevant to injector spacing P.Further, by making above-mentioned film uniformity within ± 5%, the quality of product can be kept.
Fig. 5 is analog representation when not limiting the number of ejection nozzle 13 and spray the deposition material of identical amount from whole ejection nozzle 13, makes film uniformity be less than the ± coordinate diagram of the maximum value of the injector spacing P of 5% under evaporation distance S.
According to Fig. 5, as shown in formula (1), be greater than D ' by making injector spacing P and be less than 1.11 times of evaporation distance S, can make film uniformity have as product practicality ± 5% within.
At this, although injector spacing P is less, more can improve the homogeneity of thickness, the utilising efficiency of material declines.Therefore, the ejection nozzle 13 of sequential like, the i.e. slit-shaped of P≤D ' is not comprised.In addition, in each nozzle rows 14F, 14R, physical construction is not wished injector spacing P is at below 20mm.In addition, as embodiment 2 described later, when the ejection nozzle 13 of interconnected nozzle rows 14F, 14R, when observing deposited substrate 12 from front, injector spacing P can ad infinitum close to 0, thereby, it is possible to take into account the utilising efficiency of film uniformity and material.
So, injector spacing P is less, the homogeneity that more can improve thickness, but the utilising efficiency of material declines.If make the homogeneity of thickness left and right within ± 5%, then injector spacing P can be made to broaden and improve the utilising efficiency of material.
At this, when the internal diameter of nozzle body 13a be D (mm), nozzle length is L (mm), the bore of jet hole 15 is D ' (mm) time, ejection nozzle 13 meets following formula (3).
During L>=9 × D, D '≤2.7 × D
2/ L
During L < 9 × D, D '≤D/3 ... formula (3)
Above-mentioned formula (3) is obtained for the organic materials forming organic EL film.[(during L>=9 × D) LD '/D in Fig. 6 when meeting above-mentioned formula (3)
2be greater than 0 and region below 2.7, or in Fig. 7, (during L < 9 × D) D '/D is greater than 0 and region below 1/3], the evaporating materials sprayed from the jet hole 15 of each ejection nozzle 13 to substrate 12 is according to cos
nθ rule, namely with cos
nθ curve approximation.Now, due to the evaporating materials that sprays from the jet hole 15 of ejection nozzle 13 on the surface (vapor deposited surface) of substrate 12 fully diffusion carry out evaporation, so the homogeneity of thickness can be improved.
As shown in Figure 6, during L>=9 × D, at D ' × L/D
2be greater than 0 and in region below 2.7, n value is about 4.00 ~ 4.25.In addition, as shown in Figure 7, during L < 9 × D, 0 is greater than and in region below 1/3, n value is about 4.05 ~ 4.25 at D '/D.At cos
nin θ rule, less, the evaporating materials of n value more carries out evaporation in the surface diffusion of substrate 12, thus improves the homogeneity of thickness.Most preferably n value is about 4.05 ~ 4.10, now, during L>=9 shown in Fig. 6 × D, is D ' × L/D
2be greater than 1.1 and region below 1.8, during L < 9 × D shown in Fig. 7, for D '/D is greater than 0 and region below 0.18.
At this, if as shown in Figure 6, D ' × L/D during L>=9 × D
2be greater than 2.7, or as shown in Figure 7, during L < 9 × D, D '/D is greater than 1/3, then the evaporating materials sprayed from the jet hole 15 of each ejection nozzle 13 to substrate 12 is not according to cos
nθ rule, does not carry out evaporation on the substrate 12 equably.Its result, the thickness of the part relative with jet hole 15 of substrate 12 is excessively thickening, hampers homogeneity.In addition, herein from the viewpoint of working accuracy, such as, the bore D ' of jet hole 15 is set in more than 1mm.
According to above-described embodiment 1, the front of substrate 12 travel direction and rear are provided with nozzle rows 14F, 14R, said nozzle row 14F, 14R configure ejection nozzle 13 with the injector spacing P of regulation, by being oppositely disposed each ejection nozzle 13 on the travel direction of substrate 12, evaporation rate can be improved.Thus, even if the bore of jet hole 15 is little and make the conductivity of ejection runner diminish, also can configure by multiple row the evaporation rate guaranteeing to specify.
In addition, be greater than the bore D ' of jet hole 15 by the injector spacing P of the ejection nozzle 13 making each nozzle rows 14F, 14R and be less than 1.11 times of evaporation distance S, can make film uniformity required for product ± 5% within.
In addition, in each ejection nozzle 13, D '≤2.7 × D is met by using during L>=9 × D
2meet the ejection nozzle 13 of D '≤D/3 during/L, L < 9 × D, the disperse state of the evaporating materials sprayed from jet hole 15 can be made according to cos
nθ rule and become even, thus the homogeneity that can improve attachment thickness.
[embodiment 2]
Fig. 8, Fig. 9 represent the embodiment 2 of vacuum deposition apparatus menifold.In the present embodiment 2, the component identical with embodiment 1 adopts identical Reference numeral, and eliminates explanation.
On the opposed faces 11a relative with substrate 12s of single menifold 11, be respectively arranged with nozzle rows 14F, 14R in the front of substrate 12s travel direction and rear, said nozzle row 14F, 14R are in the width direction with the projecting multiple ejection nozzle 13 with jet hole 15 of injector spacing P of regulation.In the nozzle rows 14F at above-mentioned front and rear, the ejection nozzle 13 of 14R, the ejection nozzle 13 of the nozzle rows 14R at rear is configured on the staggered position of position skew 1/2P relative to the ejection nozzle 13 of the nozzle rows 14F in front.
The structure of ejection nozzle 13 is identical with embodiment 1.
Using state when Fig. 9 represents that the substrate 12s being Wn to width in example 2 carries out film forming, the width when width of described substrate 12s is less than usual is the substrate 12 of Ws.In this case, the evaporating materials sprayed due to the ejection nozzle 13E of the end from nozzle rows 14F, 14R unnecessarily sprays, so as shown in Figure 9 C, the ejection nozzle 13E of end is provided with closing plug 21, and the mode not spraying evaporating materials with the ejection nozzle 13E of this end carries out evaporation.
In above-described embodiment 2, relative to the ejection magnitude setting of nozzle 13E of the nozzle rows 14F in front, ejection few one of the nozzle 13 of the nozzle rows 14R at rear.Such as shown in Fig. 9 A, when with centre line C L be benchmark substrate 12s is moved time, in the nozzle rows 14F in the many front of ejection nozzle 13 magnitude setting, the ejection nozzle 13E of both end sides installs closing plug 21, and the mode not spraying evaporating materials with the ejection nozzle 13E of both end sides carries out evaporation.In addition, when making substrate 12s move with side line SL for benchmark, in the nozzle rows 14F in front with in two ejection nozzle 13E of side line SL opposition side and the nozzle rows 14R at rear with an ejection nozzle 13E of side line SL opposition side on closing plug 21 is installed, carry out evaporation in the mode that above-mentioned ejection nozzle 13E does not spray evaporating materials.Thus, even when the substrate 12s little to width carries out evaporation, also unnecessarily evaporating materials can not be sprayed, thus can improve the utilising efficiency of deposition material.Further, also above-mentioned closing plug 21 can be installed on the ejection nozzle 13 of embodiment 1.
According to above-described embodiment 2, the front of substrate 12s travel direction and rear are provided with nozzle rows 14F, 14R, said nozzle row 14F, 14R configure ejection nozzle 13 with the injector spacing P of regulation, by making each ejection nozzle 13 be configured to the staggered of the skew of position in the direction of the width, do not make that ejection nozzle 13 is close to each other just can arrange multiple jet hole 15.Thus, the evaporation distance of jet hole 15 and substrate 12s can be made to shorten, and can keep adhering to the homogeneity of thickness and the utilising efficiency of raising material.
In addition, when the substrate 12s little to width carries out evaporation, by installing closing plug 21 on the ejection nozzle 13E of nozzle rows 14F, 14R end side, unnecessarily can not spray evaporating materials, thus the utilising efficiency of evaporating materials can be improved.
[embodiment 3]
Figure 10 represents the embodiment 3 of vacuum deposition apparatus menifold.Adopt identical Reference numeral with above-described embodiment 1,2 identical components, and eliminate explanation.
The substrate opposed faces 11a of above-mentioned menifold 11 is configured with nozzle rows 14F, the 14R at front and rear, and makes said nozzle row 14F, 14R be respectively front and back two row 14Ff, 14Fr, 14Rf, 14Rr.Further, the ejection nozzle 13 of each prostatitis 14Ff, 14Rf offsets 1/2P relative to the ejection nozzle 13 of rank rear 14Fr, 14Rr and is configured on staggered position on the width of substrate 12.
According to above-described embodiment 3, the action effect identical with embodiment 2 with embodiment 1 can be obtained.
Claims (8)
1. a vacuum deposition apparatus menifold, for inline process type vacuum deposition apparatus menifold, with being oppositely disposed by evaporation base material with fixed speed movement, from the multiple jet hole ejection deposition materials be arranged on opposed faces, and described deposition material is attached to by the surface of evaporation base material
The feature of described vacuum deposition apparatus menifold is,
The opposed faces relative with by evaporation base material of single menifold is provided with nozzle rows, described nozzle rows is along the projecting multiple ejection nozzle with described jet hole of injector spacing being separated regulation by the width of evaporation base material, and nozzle rows described in multiple row is along being separated predetermined distance configuration by the travel direction of evaporation base material
Be oppositely disposed by the travel direction of evaporation base material by the ejection nozzle of the nozzle rows at the ejection nozzle of the nozzle rows in evaporation base material moving direction front and rear.
2. vacuum deposition apparatus menifold according to claim 1, is characterized in that,
When the injector spacing of the ejection nozzle of each nozzle rows be P, the bore of jet hole be D ', jet hole and by the evaporation of evaporation base material distance for S time,
D’＜P＜1.11×S。
3. vacuum deposition apparatus menifold according to claim 1, is characterized in that,
When the nozzle inside diameter of ejection nozzle be D, nozzle length is L, the bore of jet hole is D ' time,
Ejection nozzle in L>=9 × D time meet D '≤2.7 × D
2/ L, and meet D '≤D/3 when L < 9 × D.
4. vacuum deposition apparatus menifold according to claim 1, it is characterized in that, corresponding with by the width of evaporation base material, at least one nozzle rows in multiple nozzle rows is provided with closing plug, the jet hole of the ejection nozzle of described closing plug closed end side.
5. a vacuum deposition apparatus menifold, for inline process type vacuum deposition apparatus menifold, with being oppositely disposed by evaporation base material with fixed speed movement, from the multiple jet hole ejection deposition materials be arranged on opposed faces, and described deposition material is attached to by the surface of evaporation base material
The feature of described vacuum deposition apparatus menifold is,
The opposed faces relative with by evaporation base material of single menifold is provided with nozzle rows, described nozzle rows is along the projecting multiple ejection nozzle with described jet hole of injector spacing being separated regulation by the width of evaporation base material, and nozzle rows described in multiple row is along being separated predetermined distance configuration by the travel direction of evaporation base material
Relative to by the ejection nozzle of the nozzle rows in evaporation base material moving direction front, the ejection nozzle arrangement of the nozzle rows at rear is on the staggered position of skew 1/2 injector spacing.
6. vacuum deposition apparatus menifold according to claim 5, is characterized in that,
When the injector spacing of the ejection nozzle of each nozzle rows be P, the bore of jet hole be D ', jet hole and by the evaporation of evaporation base material distance for S time,
D’＜P＜1.11×S。
7. vacuum deposition apparatus menifold according to claim 5, is characterized in that,
When the nozzle inside diameter of ejection nozzle be D, nozzle length is L, the bore of jet hole is D ' time,
Ejection nozzle in L>=9 × D time meet D '≤2.7 × D
2/ L, and meet D '≤D/3 when L < 9 × D.
8. vacuum deposition apparatus menifold according to claim 5, it is characterized in that, corresponding with by the width of evaporation base material, at least one nozzle rows in multiple nozzle rows is provided with closing plug, the jet hole of the ejection nozzle of described closing plug closed end side.
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| JP2013-220694 | 2013-10-24 | ||
| JP2013220694 | 2013-10-24 |
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| JP (1) | JP6671095B2 (en) |
| KR (1) | KR102192500B1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107735509A (en) * | 2015-07-28 | 2018-02-23 | 夏普株式会社 | Vapor deposition source, evaporation coating device and evaporation film manufacturing method |
| TWI685580B (en) * | 2017-11-30 | 2020-02-21 | 大陸商上海微電子裝備（集團）股份有限公司 | Vacuum evaporation device, evaporation head and vacuum evaporation method |
| TWI825433B (en) * | 2020-06-29 | 2023-12-11 | 美商應用材料股份有限公司 | Nozzle assembly for guiding an evaporated material to a substrate, evaporation source and deposition system and method for depositing an evaporated material onto a substrate |
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| KR102367988B1 (en) * | 2017-07-31 | 2022-02-28 | 삼성디스플레이 주식회사 | Apparatus and method for manufacturing a display apparatus |
| US20220298524A1 (en) | 2019-08-30 | 2022-09-22 | University Of Tsukuba | Fruit-bearing plant exhibiting high temperature resistance, high yield, and parthenocarpy |
| JP7247142B2 (en) * | 2020-06-25 | 2023-03-28 | キヤノントッキ株式会社 | Vapor deposition device and evaporation source |
| US20220033958A1 (en) * | 2020-07-31 | 2022-02-03 | Applied Materials, Inc. | Evaporation source, vapor deposition apparatus, and method for coating a substrate in a vacuum chamber |
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| TWI252706B (en) * | 2002-09-05 | 2006-04-01 | Sanyo Electric Co | Manufacturing method of organic electroluminescent display device |
| JP4380319B2 (en) | 2002-12-19 | 2009-12-09 | ソニー株式会社 | Vapor deposition apparatus and organic electroluminescence element manufacturing method |
| TWI263690B (en) * | 2004-01-06 | 2006-10-11 | Ind Tech Res Inst | Evaporation coating apparatus |
| JP4476019B2 (en) * | 2004-05-20 | 2010-06-09 | 東北パイオニア株式会社 | Deposition source, vacuum film formation apparatus, organic EL element manufacturing method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107735509A (en) * | 2015-07-28 | 2018-02-23 | 夏普株式会社 | Vapor deposition source, evaporation coating device and evaporation film manufacturing method |
| CN107735509B (en) * | 2015-07-28 | 2019-12-13 | 夏普株式会社 | Vapor deposition source, vapor deposition device, and vapor deposition film manufacturing method |
| TWI685580B (en) * | 2017-11-30 | 2020-02-21 | 大陸商上海微電子裝備（集團）股份有限公司 | Vacuum evaporation device, evaporation head and vacuum evaporation method |
| TWI825433B (en) * | 2020-06-29 | 2023-12-11 | 美商應用材料股份有限公司 | Nozzle assembly for guiding an evaporated material to a substrate, evaporation source and deposition system and method for depositing an evaporated material onto a substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201516166A (en) | 2015-05-01 |
| TWI661067B (en) | 2019-06-01 |
| JP6671095B2 (en) | 2020-03-25 |
| JP2015108185A (en) | 2015-06-11 |
| KR102192500B1 (en) | 2020-12-17 |
| KR20150048620A (en) | 2015-05-07 |
| CN104561903B (en) | 2019-01-15 |
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