JP2015108185A - Manifold for vacuum evaporation system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the utilization efficiency of a vapor deposition material.SOLUTION: An in-line manifold for a vacuum evaporation system comprises: a plurality of emission nozzles 13 having a nozzle port which are provided on a substrate opposite surface 11a facing a substrate 12; and nozzle rows 14F and 14R protruding with an interval of a predetermined nozzle pitch P between them in a width direction of the substrate 12. The nozzle rows 14F and 14R are arranged with an interval of a predetermined nozzle pitch Lp between them in a movement direction of the substrate 12, and the emission nozzles 13 of the rear nozzle row 14R are arranged in the state of facing the emission nozzles 13 of the front nozzle row 14F in the movement direction of the substrate 12.

Description

  The present invention relates to a manifold for a vacuum deposition apparatus suitable for manufacturing an organic EL element, which performs in-line deposition using a linear source.

  In the in-line vapor deposition method, a manifold that is a linear source of the vapor deposition material is arranged along the width direction facing the vapor deposition substrate that is moved at a constant speed, and the evaporation material is discharged from the discharge nozzle provided in this manifold. Is deposited on the surface of the substrate to be deposited.

  In the in-line deposition type vacuum deposition apparatus, Patent Document 1 discloses that a linear source manifold is a crucible for heating and vaporizing a deposition material, and a plurality of discharge nozzles are provided on the upper surface of the crucible along the longitudinal direction of the crucible. There is disclosed a technique in which nozzle ports for forming and discharging vapor deposition materials are formed in the respective discharge nozzles.

Japanese Patent No. 4380319 (FIG. 1)

  By the way, expensive vapor deposition materials, such as organic EL, need to improve the utilization efficiency (ratio of the deposition amount with respect to the evaporation amount). For this reason, it is conceivable that the vapor deposition distance between the nozzle port which is an orifice and the vapor deposition substrate is shortened by bringing the vapor deposition substrate and the discharge nozzle close to each other. When the deposition distance is shortened, it is necessary to increase the number of nozzle openings in order to ensure the uniformity of the deposited film thickness, and the discharge nozzles approach each other. The discharge nozzle is an orifice that restricts the outlet in order to adjust the discharge amount. However, if the ratio of the diameter of the nozzle opening / the inner diameter of the discharge nozzle is not more than a certain value, one discharge nozzle The film thickness distribution of the vapor deposition material released from is not constant. Therefore, it is difficult to install the nozzle ports close to each other.

  As a countermeasure, it is conceivable to reduce the diameter of the nozzle port. However, if the diameter of the nozzle port is reduced, the conductance of the discharge channel is reduced. Therefore, in order to secure a predetermined vapor deposition rate, it is necessary to increase the evaporation temperature (heating temperature) of the vapor deposition material in the crucible. When the evaporation temperature increases, the vapor deposition material tends to deteriorate, and the running cost is reduced. May increase.

  An object of the present invention is to provide a manifold for a vacuum vapor deposition apparatus that solves the above-described problems and can increase the utilization efficiency of the vapor deposition material.

The invention described in claim 1
In-line vacuum deposition that is placed opposite the substrate to be deposited that is moved at a constant speed, and that deposits the deposition material on the surface of the substrate to be deposited by discharging the deposition material from a plurality of nozzle openings provided on the opposing surface. A manifold for the device,
A plurality of discharge nozzles having the nozzle ports are provided on the opposite surface of the substrate to be vapor-deposited of a single manifold, and a nozzle row is provided with a predetermined nozzle pitch protruding in the width direction of the vapor-deposited substrate, A plurality of the nozzle rows are arranged at predetermined intervals in the moving direction of the substrate to be deposited,
The discharge nozzles in the rear nozzle row are arranged opposite the discharge nozzles in the rear nozzle row in the movement direction of the vapor deposition substrate, with respect to the discharge nozzles in the nozzle row in the front in the movement direction of the vapor deposition substrate.

The invention according to claim 2
A manifold is arranged opposite the substrate to be vapor-deposited that is moved at a constant speed, the vapor deposition material is discharged from a plurality of nozzle ports provided in the manifold, and is deposited on the surface of the substrate to be vapor-deposited. A manifold for a vacuum deposition apparatus,
A plurality of discharge nozzles having nozzle openings are provided on the opposite surface of the substrate to be vapor-deposited of a single manifold, and a nozzle row is provided with a predetermined nozzle pitch projecting in the width direction of the vapor-deposited substrate. A plurality of nozzle rows are arranged at predetermined intervals in the moving direction of the substrate to be deposited,
It is characterized in that the discharge nozzle position of the rear nozzle row is arranged at a staggered position shifted by 1/2 of the nozzle pitch with respect to the discharge nozzle of the nozzle row ahead of the deposition substrate in the moving direction.

The invention according to claim 3 is the configuration according to claim 1 or 2,
Assuming that the nozzle pitch of the discharge nozzle in each nozzle row is P, the diameter of the nozzle port is D ′, and the deposition distance between the nozzle port and the substrate to be deposited is S,
D ′ <P <1.11 × S.

The invention according to claim 4 is the configuration according to any one of claims 1 to 3,
The discharge nozzle has a nozzle inner diameter: D (mm), a nozzle length: L (mm), and a nozzle opening diameter: D ′ (mm).
When L ≧ 9 × D, D ′ ≦ 2.7 × D ² / L is satisfied,
In the case of L <9 × D, D ′ ≦ D / 3 is satisfied.

The invention according to claim 5 is the configuration according to any one of claims 1 to 4,
In accordance with the width of the substrate to be deposited, at least one nozzle row of the plurality of nozzle rows is provided with a closing plug for closing the nozzle port of the discharge nozzle on the end side.

  According to the first aspect of the present invention, the nozzles for discharge in the front and rear nozzle rows are arranged opposite to the moving direction of the substrate to be deposited, thereby comparing with the case where the nozzle rows are arranged in one row. Thus, the deposition rate can be improved. Thereby, even if the conductance of the discharge flow path may be reduced by reducing the diameter of the nozzle opening, a predetermined vapor deposition rate can be ensured by arranging in a plurality of rows.

  According to the second aspect of the invention, by disposing the discharge nozzles of the front and rear nozzle rows at the staggered position, even if a sufficient nozzle pitch is secured for the discharge nozzles in each nozzle row, The discharge nozzles in the front view of the vapor deposition substrate can be disposed close to each other, and the uniformity of the film thickness can be improved. Thereby, the vapor deposition distance between the discharge nozzle and the vapor deposition substrate can be shortened, and the utilization efficiency of the material can be improved without deteriorating the uniformity of the deposited film thickness.

  According to the invention of claim 3, when the deposition distance is S, the nozzle pitch: P of the discharge nozzle in each nozzle row is set to be not more than S × 1.11 times exceeding the nozzle opening diameter, Vapor deposition can be achieved while achieving film thickness uniformity within ± 5% required for products.

According to the fourth aspect of the present invention, the discharge nozzle satisfies D ′ ≦ 2.7 × D ² / L when L ≧ 9 × D, and D ′ when L <9 × D. By using a discharge nozzle satisfying ≦ D / 3, the diffusion state of the evaporation material discharged from the nozzle port becomes uniform according to the cos ⁿ θ rule, and the uniformity of the film thickness is improved. Can do.

  According to the invention described in claim 5, when the width of the substrate to be deposited is narrowed, useless evaporation by attaching a closure plug to the nozzle port of the discharge nozzle on the end side of the nozzle row and closing it. The release of the material can be suppressed, and the running cost can be reduced.

(A)-(c) shows Example 1 of the manifold for vacuum evaporation systems which concerns on this invention, (a) is a top view, (b) is a side view, (c) is a front view. It is a longitudinal cross-sectional view which shows the nozzle for discharge | release. (A), (b) is explanatory drawing of the vapor deposition film thickness by an in-line vapor deposition system, (a) is a schematic plan view which shows arrangement | positioning of the nozzle for discharge | release, (b) is a front view which shows a film thickness. It is a front view which shows the change of the film thickness by the nozzle pitch of the nozzle for discharge, (a) shows the case of a narrow nozzle pitch, (b) shows the case of a wide nozzle pitch. It is a graph which shows the range whose film thickness uniformity is less than +/- 5% in the nozzle pitch with respect to vapor deposition distance. FIG. 5 is a graph showing a relationship between (length of discharge nozzle: L) × (nozzle port diameter: D ′) / (discharge nozzle inner diameter: D) and n value of cos ⁿ θ rule in the discharge nozzle. is there. 5 is a graph showing the relationship between (nozzle aperture: D ′) / (discharge nozzle inner diameter: D) and n value of cos ⁿ θ rule in the discharge nozzle. It is a top view which shows 2nd Example of the manifold for vacuum evaporation systems which concerns on this invention. (A)-(c) shows the usage state of the manifold when the width of the substrate is changed, (a) is when the substrate is moved along the center line, and (b) is when the substrate is moved to the side line. When moved along, (c) shows a longitudinal section of the discharge nozzle with the closure plug attached. It is a top view which shows 3rd Example of the manifold for vacuum evaporation systems which concerns on this invention.

[Example 1]
A first embodiment of a manifold for an in-line vapor deposition apparatus according to the present invention will be described below with reference to FIGS.

  As shown in FIGS. 1 and 2, the manifold 11 is arranged in a vacuum deposition chamber kept in a vacuum state so as to face a deposition surface of a substrate (deposition substrate) 12 that is moved at a constant speed. Is. On the opposing surface 11a of the manifold 12, nozzle rows 14F and 14R in which a plurality of discharge nozzles 13 project at a predetermined nozzle pitch P in the width direction are provided at the front and rear in the movement direction of the substrate 12, respectively. . Here, as shown in FIG. 2, the nozzle pitch P refers to the distance between the nozzle ports 15 and 15 of the discharge nozzles 13 adjacent to each other in the nozzle rows 14F and 14R.

  The discharge nozzles 13 of the front and rear nozzle rows 14F and 14R are arranged facing the movement direction of the substrate 12. Nozzle ports 15 are respectively formed on the front end surfaces of the discharge nozzles 13. In addition, in order to introduce the evaporation material obtained by heating and evaporating the vapor deposition material with a crucible (not shown) into the manifold 11, a material introduction port 16 is formed on the opposite surface of the manifold 11, and the inner diameter d is increased. A material introduction pipe 17 is connected.

  The front and rear nozzle rows 14F and 14R are arranged with a predetermined distance from the material introduction port 16, and are further arranged with a nozzle row interval Lp in the moving direction of the substrate 12. The distance between the front and rear nozzle rows 14F and 14R and the material introduction port 16 is that the evaporation material supplied from the material introduction port 16 is not introduced into the discharge nozzle 13 in a non-uniform manner. Further, the discharge nozzles 13 at both ends of the front and rear nozzle rows 14F and 14R are arranged at positions corresponding to both edges of the substrate 12 having a width: Ws.

  The manifold 11 has an internal space in which the evaporation material introduced from the material introduction port 16 can be uniformly diffused, and is formed in a rectangular parallelepiped having a longitudinal length Lm, a width Wm, and a height Hm. Cooling plates (not shown) that block radiant heat from the substrate 12 are installed, and heaters (not shown) that prevent the evaporation material from adhering are provided on the left and right side surfaces and the front and rear side surfaces. Then, the substrate 12 is moved with a predetermined deposition distance S with respect to the nozzle port 15. Reference numeral 18 denotes a pressure detection port provided on the front side surface of the manifold 11, and 19 denotes a vapor deposition rate detection port provided on the rear side surface of the manifold 11.

  As shown in FIG. 2, the discharge nozzle 13 has a cylindrical nozzle body 13a erected on the substrate facing surface 11a of the manifold 11, and a nozzle port 15 is formed on the tip surface of the nozzle body 13a to form an orifice. The end plate 13b which has is attached.

  The nozzle pitch P of the discharge nozzles 13 in each of the nozzle rows 14F and 14R is configured to satisfy the following formula (1) when the diameter of the nozzle port 15 is D ′ (mm).

D ′ <P <1.11 × S (1) That is, the arrangement of the discharge nozzle 13 of the inline manifold 11 is as shown in FIG. (Theoretically) forming an infinite number of rows and assuming that the ejection flow rate from all the discharge nozzles 13 is constant, the film thickness uniformity of the deposition target substrate 12 is that of the discharge nozzles 13. Depends on the nozzle pitch P. As shown in FIG. 3B, the film thickness distribution immediately above the arrangement of the discharge nozzles 13 with respect to the deposition target substrate 12 is the thickest integrated film thickness deposited immediately above the discharge nozzles 13, and adjacent discharge nozzles. 13 is the thinnest immediately above the midpoint (1 / 2P) with respect to 13. In addition, since it is D '<P here, a slit-shaped nozzle port is not included. As shown in FIG. 4A, when the nozzle pitch P is small, the difference in film thickness between the maximum film thickness and the minimum film thickness is small, and as shown in FIG. 4B, the nozzle pitch P is large. And the film thickness difference between the maximum film thickness and the minimum film thickness becomes large. The film thickness uniformity is expressed by the following equation (2) when the maximum film thickness: dmax and the minimum film thickness: dmin.

Film thickness uniformity = [(dmax−dmin) / (dmax + dmin)] × 100 (%)
... (2) formula

  Thus, since the film thickness uniformity depends on the maximum film thickness and the minimum film thickness, it depends on the nozzle pitch P. The product quality can be maintained by keeping the film thickness uniformity within ± 5%.

  FIG. 5 shows an example in which the number of discharge nozzles 13 is unlimited, and when the same amount of vapor deposition material is discharged from all the discharge nozzles 13, the film thickness uniformity is less than ± 5% at the vapor deposition distance S. The graph which represented the maximum value by simulation is shown.

  According to FIG. 5, as shown in the equation (1), by setting the nozzle pitch P to be greater than D ′ and less than 1.11 times the deposition distance S, the film thickness uniformity is practical as a product. It can be within a certain ± 5%.

  Here, as the nozzle pitch P is smaller, the uniformity of the film thickness is improved, but the material utilization efficiency is lowered. For this reason, the continuous, ie, slit-shaped discharge nozzles 13 satisfying P ≦ D ′ are not included. In each of the nozzle rows 14F and 14R, the nozzle pitch P is not desirably 20 mm or less because of the mechanical structure. When the discharge nozzles 13 of the nozzle rows 14F and 14R are arranged in a staggered manner as in Example 2 to be described later, when the deposition target substrate 12 is viewed from the front, it can be brought close to 0 as much as possible. This makes it possible to achieve both film thickness uniformity and material utilization efficiency.

  Thus, the smaller the nozzle pitch P, the better the film thickness uniformity, but the material utilization efficiency decreases. If the uniformity of the film thickness is in the vicinity of ± 5%, the nozzle pitch P can be widened to increase the material utilization efficiency.

  Here, when the discharge nozzle 13 has an inner diameter of the nozzle body 13a: D (mm), a nozzle length: L (mm), and a diameter of the nozzle port 15: D ′ (mm), the following equation (3) is obtained. It is configured to satisfy.

When L ≧ 9 × D, D ′ ≦ 2.7 × D ² / L
In the case of L <9 × D, D ′ ≦ D / 3 (3) Equation (3) is obtained for the organic material forming the organic EL film. When the above equation (3) is satisfied [FIG. 6 (when L ≧ 9 × D), LD ′ / D ² is greater than 0 and less than or equal to 2.7, or FIG. 7 (when L <9 × D) In the region where D ′ / D is greater than 0 and equal to or less than 1/3], the evaporation material discharged from the nozzle port 15 of each discharge nozzle 13 to the substrate 12 follows the cos ⁿ θ rule, ie, approximates the cos ⁿ θ curve. Is done. In this case, the evaporation material discharged from the nozzle port 15 of the discharge nozzle 13 is deposited with a sufficient spread on the surface (deposition surface) of the substrate 12, so that the uniformity of the film thickness can be improved. .

As shown in FIG. 6, when L ≧ 9 × D, the n value is about 4.00 to 4.25 in the region where D ′ × L / D ² exceeds 0 and is equal to or less than 2.7. As shown in FIG. 7, when L <9 × D, the n value is about 4.05 to 4.25 in the region where D ′ / D is greater than 0 and equal to or less than 1/3. As the value of n in the cos ⁿ θ rule is smaller, the evaporation material spreads on the surface of the substrate 12 and is deposited, and the uniformity of the film thickness is improved. More preferably, the n value is preferably about 4.05 to 4.10. In this case, when L ≧ 9 × D shown in FIG. 6, D ′ × L / D ² exceeds 1.1 and is 1.8. In the case of L <9 × D shown in FIG. 7, D ′ / D exceeds 0 and is 0.18.

Here, as shown in FIG. 6, if L ≧ 9 × D, if D ′ × L / D ² exceeds 2.7, or if L <9 × D, as shown in FIG. When '/ D exceeds 1/3, the evaporation material discharged from the nozzle port 15 of each discharge nozzle 13 to the substrate 12 does not follow the cos ⁿ θ rule and is not uniformly deposited on the substrate 12. As a result, the thickness of the portion of the substrate 12 facing the nozzle opening 15 becomes excessively thick, and the uniformity is hindered. Here, the diameter D ′ of the nozzle port 15 is set to, for example, 1 mm or more from the viewpoint of processing accuracy.

  According to the first embodiment, the nozzle rows 14F and 14R in which the discharge nozzles 13 are arranged at a predetermined nozzle pitch P are provided in front and rear in the movement direction of the substrate 12, and each discharge nozzle 13 is connected to the substrate 12 by a predetermined pitch P. By disposing it so as to face the moving direction, the deposition rate can be improved. Thereby, even if the diameter of the nozzle port 15 is reduced and the conductance of the discharge channel is reduced, a predetermined vapor deposition rate can be ensured by arranging in a plurality of rows.

  Further, by setting the nozzle pitch P of the discharge nozzles 13 in each of the nozzle rows 14F and 14R to be less than 1.11 times the deposition distance S beyond the diameter D ′ of the nozzle port 15, the film thickness uniformity can be improved. As necessary, it can be within ± 5%.

Further, in each discharge nozzle 13, D ′ ≦ 2.7 × D ² / L is satisfied when L ≧ 9 × D, and D ′ ≦ D / 3 is satisfied when L <9 × D. By using the discharge nozzle thus formed, the diffusion state of the evaporation material discharged from the nozzle port 15 becomes uniform according to the cos ⁿ θ rule, and the uniformity of the film thickness can be improved.

[Example 2]
8 and 9 show a second embodiment of a manifold for a vacuum vapor deposition apparatus. In the second embodiment, the same members as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

  Nozzle rows 14F and 14R in which a plurality of discharge nozzles 13 having nozzle openings 15 project at a predetermined nozzle pitch P in the width direction on the opposing surface of the substrate 12 of the single manifold 11 are the movement direction of the substrate 12 Are provided at the front and the rear, respectively. The discharge nozzles 13 of the front and rear nozzle rows 14F and 14R are staggered positions in which the discharge nozzles 13 of the rear nozzle row 14F are displaced by 1 / 2P relative to the discharge nozzles 13 of the front nozzle row 14F. Is arranged.

The configuration of the discharge nozzle 13 is the same as that of the first embodiment.
FIG. 9 shows a use state when a substrate 12s having a narrow width Wn is formed on the substrate 12 having a normal width Ws in Example 2. In such a case, since the evaporation material discharged from the discharge nozzles 13E at the ends of the nozzle rows 14F and 14R is discharged wastefully, the discharge nozzles 13E at the ends are discharged as shown in FIG. 9C. The closure plug 21 is attached, and vapor deposition is performed without releasing the evaporation material.

  In the second embodiment, the number of discharge nozzles 13 in the rear nozzle row 14F is one less than the number of discharge nozzles 13 in the front nozzle row 14F. For example, as shown in FIG. 9A, when the substrate 12s is moved with respect to the center line CL, the discharge nozzles 13E on the both ends are closed by the front nozzle row 14F where the number of the discharge nozzles 13 is large. The plug 21 is attached, and vapor deposition is performed without releasing the evaporation material. When the substrate 12s is moved with reference to the side line SL, the two nozzles 13E for discharge on the opposite side to the side line SL in the front nozzle row 14F and the side opposite to the side line SL in the rear nozzle row 14F are used. The closing plug 21 is attached to one of the discharge nozzles 13E, and vapor deposition is performed without discharging the evaporation material. Thereby, even when the substrate 12s having a narrow width is vapor-deposited, useless evaporation material can be eliminated and the utilization efficiency of the vapor-deposition material can be improved. Of course, the closing plug 21 can be attached to the discharge nozzle 13 of the first embodiment.

  According to the second embodiment, the nozzle rows 14F and 14R in which the discharge nozzles 13 are arranged at a predetermined nozzle pitch P are provided in front and rear in the movement direction of the substrate 12, and each discharge nozzle 13 is arranged in the width direction. By disposing the nozzles 15 in a staggered position, a large number of nozzle openings 15 can be provided without bringing the discharge nozzles 13 close to each other. Thereby, the vapor deposition distance between the nozzle port 15 and the substrate 12 can be shortened, and the uniformity of the deposited film thickness can be maintained, so that the utilization efficiency of the material can be improved.

  Further, when vapor-depositing a substrate 12s having a narrow width, by attaching a closing plug 21 to the discharge nozzle 13E on the end side of the nozzle rows 14F and 14R, wasteful evaporation of the evaporation material is eliminated, and the evaporation material The utilization efficiency can be improved.

[Example 3]
FIG. 10 shows Example 3 of a manifold for a vacuum evaporation apparatus. The same members as those in the first and second embodiments are denoted by the same reference numerals, and the description thereof is omitted.

  The front and rear nozzle rows 14F and 14R are arranged on the substrate facing surface 11a of the manifold 11, and the nozzle rows 14F and 14R are formed as two front and rear rows 14Ff and 14Fr, respectively. The discharge nozzles 13 of each front row 14Ff are arranged at a staggered position with a shift of 1 / 2P in the movement direction of the substrate 12 with respect to the discharge nozzles 13 of the rear row 14Fr.

  According to the said Example 3, there can exist an effect similar to Example 1 and Example 2. FIG.

11 Manifold 11a Substrate facing surface 12 Substrate (deposition base material)
13 Nozzle for discharge 13a Nozzle body 13b End plate 14F Front nozzle row 14R Rear nozzle row 15 Nozzle port 16 Material introduction port 17 Material introduction tube 18 Pressure detection port 19 Deposition rate detection port 21 Closed plug Lp Nozzle row pitch D Nozzle Inner diameter D 'Nozzle port diameter L Nozzle body length

Claims (5)

In-line vacuum deposition that is placed opposite the substrate to be deposited that is moved at a constant speed, and that deposits the deposition material on the surface of the substrate to be deposited by discharging the deposition material from a plurality of nozzle openings provided on the opposing surface. A manifold for the device,
A plurality of discharge nozzles having the nozzle ports are provided on the opposite surface of the substrate to be vapor-deposited of a single manifold, and a nozzle row is provided with a predetermined nozzle pitch protruding in the width direction of the vapor-deposited substrate, A plurality of the nozzle rows are arranged at predetermined intervals in the moving direction of the substrate to be deposited,
A manifold for a vacuum vapor deposition apparatus, characterized in that a discharge nozzle of a nozzle row in front of a deposition substrate in a moving direction and a discharge nozzle of a nozzle row in the rear are arranged facing the movement direction of the deposition substrate. . In-line vacuum deposition that is placed opposite the substrate to be deposited that is moved at a constant speed, and that deposits the deposition material on the surface of the substrate to be deposited by discharging the deposition material from a plurality of nozzle openings provided on the opposing surface. A manifold for the device,
A plurality of discharge nozzles having nozzle openings are provided on the opposite surface of the substrate to be vapor-deposited of a single manifold, and a nozzle row is provided with a predetermined nozzle pitch projecting in the width direction of the vapor-deposited substrate. A plurality of nozzle rows are arranged at predetermined intervals in the moving direction of the substrate to be deposited,
The vacuum is characterized in that the discharge nozzle position of the rear nozzle row is arranged at a staggered position shifted by 1/2 of the nozzle pitch with respect to the discharge nozzle of the front nozzle row in the moving direction of the substrate to be deposited. Manifold for vapor deposition equipment. Assuming that the nozzle pitch of the discharge nozzle in each nozzle row is P, the diameter of the nozzle port is D ′, and the deposition distance between the nozzle port and the substrate to be deposited is S,
The manifold for a vacuum evaporation apparatus according to claim 1, wherein D ′ <P <1.11 × S. The discharge nozzle has a nozzle inner diameter: D (mm), a nozzle length: L (mm), and a nozzle opening diameter: D ′ (mm).
When L ≧ 9 × D, D ′ ≦ 2.7 × D ² / L is satisfied,
4. The vacuum deposition apparatus manifold according to claim 1, wherein D ′ ≦ D / 3 is satisfied when L <9 × D. 5. The closure plug for closing the nozzle port of the discharge nozzle on the end side is attached to at least one of the plurality of nozzle rows corresponding to the width of the substrate to be deposited. The manifold for vacuum evaporation apparatus in any one of 1-4.

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