JP2013216955A - Vacuum vapor deposition apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vacuum vapor deposition apparatus in which a plurality of line-shaped evaporation sources are arranged in multiple-stages to the film deposition direction and which allows co-vapor deposition without changing film deposition order in a forward path and a reverse path.SOLUTION: A vacuum vapor deposition apparatus for depositing a film of a vapor deposition material on a substrate 2 has an evaporation source group 3 formed by arranging a plurality of line-shaped evaporation sources 3-A, 3-B so as to be symmetric to the film deposition direction. The evaporation source group 3 performs film deposition while moving in a first direction to the substrate, and thereafter, performs film deposition while moving in a second direction that is reverse to the first direction to the substrate.

Description

  The present invention relates to a vacuum deposition apparatus.

  In recent years, organic EL elements have attracted attention as a new industrial field. Organic EL displays are expected as next-generation displays that replace liquid crystal displays and plasma displays, and organic EL lighting is expected as next-generation lighting along with LED lighting.

  An organic EL device has a structure in which a multilayer structure in which a light emitting layer made of an organic compound, a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer and the like are stacked is sandwiched between electrode pairs composed of an anode and a cathode. ing. By applying a voltage to the electrode, holes are injected from the anode side and electrons are injected from the cathode side into the light emitting layer, and light is emitted by deactivation of excitons (excitons) generated by recombination.

  The organic material forming the light emitting layer includes a high molecular material and a low molecular material. Among these, low molecular weight materials, which are currently mainstream, are formed by vacuum deposition. Vacuum deposition is also used when forming other layers. In order to improve performance, doping and alloying by co-evaporation are also performed (Patent Document 1).

  An evaporation source used for vacuum deposition includes a crucible that encloses a deposition material, a nozzle that ejects the deposition material, a heater that heats the crucible, and a housing that stores the crucible, the nozzle, the heater, and the like. Each layer is formed by evaporating or sublimating the vapor deposition material from a crucible heated by a heater and spraying the vapor deposition material vaporized from a nozzle onto a substrate placed in a vacuum chamber. In order to produce an organic EL element for color display, an organic EL material that emits different light is applied to each pixel in a state where the substrate and the metal mask are aligned.

  The organic EL element is required to increase the substrate size as the display device and the lighting device increase. Substrate size has expanded from the current 4.5th generation production line (glass substrate dimensions: 730mm x 920mm) to the 5.5th generation production line (substrate dimensions are 1300mm x 1500mm), which is 2.9 times the substrate size. Furthermore, it is expected to extend to the eighth generation production line (glass substrate size: 2200 mm × 2500 mm).

In order to cope with an increase in the substrate size, various types of evaporation sources such as a linear evaporation source and a planar evaporation source have been put into practical use. From the viewpoint of scalability with respect to the substrate size, a linear evaporation source is more preferable than a planar shape. The line-shaped evaporation source can form a uniform thin film on the substrate by relatively moving along the substrate in a direction perpendicular to the longitudinal direction.
Examples of the line-shaped evaporation source include an integrated linear evaporation source having a plurality of nozzles, and a multi-evaporation source in which a plurality of evaporation source units having a plurality of nozzles are arranged in a line in the longitudinal direction.

  When the dimension in the longitudinal direction is approximately the substrate size, the line-shaped evaporation source can be formed on the entire surface of the substrate by one-way scanning. When the dimension in the longitudinal direction is smaller than the substrate size, the film can be formed on the entire surface of the substrate by moving at a certain pitch in the longitudinal direction between the forward path and the backward path.

Japanese Patent No. 3741842

  In co-evaporation, a plurality of evaporation sources are provided in the same vacuum chamber, and different materials are arranged in different evaporation sources. In the case of co-evaporation with a line-shaped evaporation source, for example, a plurality of line-shaped evaporation sources may be arranged in multiple stages along the film forming direction. However, when reciprocal film formation is performed with such a configuration, the film formation order is reversed between the forward path and the return path. For this reason, when film formation is performed on different substrate locations in the forward path and the return path, there is a problem that the composition ratio varies within the substrate surface. On the other hand, the solution by this invention is described below.

  The features of the present invention for solving the above-described problems are as follows. In a vacuum deposition apparatus for depositing a deposition material on a substrate, the evaporation source group includes a plurality of line-shaped evaporation sources arranged so as to be symmetric with respect to a deposition direction, and the evaporation source group is disposed on the substrate. On the other hand, after forming the film while moving in the first direction, the film is formed while moving in the second direction opposite to the first direction with respect to the substrate.

  The vacuum vapor deposition apparatus of the present invention arranges a plurality of line-shaped evaporation sources prepared according to the type of vapor deposition material so as to be symmetric with respect to the film forming direction (and the reverse direction), and in the forward path and the backward path A co-deposited film can be formed without changing the film formation order. Therefore, the composition is formed when the film is reciprocated with respect to the first direction and moved along the substrate surface in the second direction substantially orthogonal between the forward path and the backward path to form films at different substrate positions in the forward path and the backward path. Since the ratio can be made uniform, a co-deposited film having a uniform film thickness and composition can be formed on a larger substrate.

2 is a configuration in a vacuum chamber of a vacuum vapor deposition apparatus in Example 1. FIG. FIG. 2 is a schematic diagram <1> showing the arrangement and movement paths of evaporation sources in Example 1. It is a schematic diagram <2> which shows arrangement | positioning and the movement path | route of an evaporation source in Example 1. FIG. It is a schematic diagram <3> which shows arrangement | positioning and a movement path | route of the evaporation source in Example 1. FIG. It is a schematic diagram <4> which shows arrangement | positioning and the movement path | route of an evaporation source in Example 1. FIG. FIG. 6 is a schematic diagram showing the arrangement and movement paths of evaporation sources in Example 2. 6 is a configuration in a vacuum chamber of a vacuum vapor deposition apparatus in Example 3. FIG. 10 is a schematic diagram showing the arrangement and movement paths of evaporation sources in Example 3. It is a schematic diagram which shows the arrangement | positioning and movement path | route of an evaporation source in Example 4. FIG. It is a schematic diagram which shows the arrangement | positioning and movement path | route of an evaporation source in Example 5. FIG. FIG. 10 is a schematic diagram showing the arrangement of evaporation sources in Example 6.

  Embodiments of the present invention will be described below with reference to the drawings. Below, the example applied to manufacture of an organic EL device is demonstrated as an example of the vacuum evaporation system of this invention. The following description shows specific examples of the contents of the present invention, and the present invention is not limited only to these descriptions. Various modifications by those skilled in the art within the scope of the technical idea disclosed in this specification will be described. Changes and modifications are possible. For example, the vapor deposition material is not limited to an organic material, and a metal material, an inorganic material, and other materials can be used. Co-evaporation can also be applied in many cases such as doping and alloy formation.

<Vacuum deposition apparatus with one evaporation source group>
FIG. 1 is a schematic diagram illustrating a configuration of a part (in a vacuum chamber) of a vacuum deposition apparatus according to the first embodiment. A vertically standing substrate 2 and a three-stage line-shaped evaporation source group 3 are arranged in a vacuum chamber 1 maintained in a vacuum. The substrate 2 carried in from the substrate delivery section 4 provided to maintain a vacuum with the transfer chamber (not shown) is aligned with the substrate holder (not shown), and the substrate 2 and the substrate holder are substantially omitted. Stands vertically. In this embodiment, an example of a substrate holder that also serves as a metal mask patterned on a lattice for each chamfer size is shown. In the embodiment shown in FIG. 1, the vertical direction corresponds to the film forming direction, and the horizontal direction corresponds to the longitudinal direction of the line-shaped evaporation source group 3. The forward direction and the reverse direction are not particularly distinguished unless necessary.

The line-shaped evaporation source group 3 includes an evaporation source 3-A for storing the first material, an evaporation source 3-B for storing the second material B, and an evaporation source for storing the first material in order along the film forming direction. It consists of three stages of 3-A. Here, the second material is a material different from the first material. As the evaporation source 3-A and the evaporation source 3-B, for example, a linear evaporation source or a multi-evaporation source is used. The line-shaped evaporation source has a longitudinal direction, and its length is approximately half the length of the horizontal side of the substrate 2.
Preferably, it is shorter than the length of the side in the horizontal direction of the substrate 2 and longer than half of the length.

  FIG. 2 is a schematic diagram <1> showing the arrangement and movement path of the evaporation source in the first embodiment. FIG. 2 is a view of the substrate 2 as viewed from the substrate transfer unit 4. 3, 4, 5, 6, 8, 9, and 10, which will be described later, are similarly views of the substrate 2 as viewed from the substrate transfer unit 4. The evaporation source group 3 forms a film on the substrate 2 while moving up and down in the vertical direction, and in the horizontal direction between upward movement (referred to as upward movement) and downward movement (referred to as downward movement). The entire substrate 2 is scanned by moving about half the length of the substrate 2.

  For example, as shown in FIG. 2, the evaporation source group 3 performs film formation on substantially half (left half) of the substrate 2 while moving vertically upward from a standby position lower than the lower side of the substrate 2 (S21). Then, when the position of the evaporation source group 3 is higher than the upper side of the substrate 2, it moves to the right in the horizontal direction (left-right direction) by approximately half of the length of the substrate 2 (S 22). Thereafter, the remaining half (right half) of the substrate 2 is deposited while moving downward in the vertical direction (S23). Then, when the position of the evaporation source group 3 is lower than the lower side of the substrate 2, it moves to the left in the horizontal direction (left and right direction) by approximately half of the length of the substrate 2 and returns to the standby position before the film formation of the substrate 2 ( S24).

  FIG. 3 is a schematic diagram <2> showing the arrangement and movement path of the evaporation source in the first embodiment. The movement path 6 of the evaporation source group 3 is not limited to the above. For example, the odd-numbered substrates 2 may be processed by the movement path 6 shown in FIG. 3, and the even-numbered substrates 2 may be processed by the opposite movement path 6.

  FIG. 4 is a schematic diagram <3> showing the arrangement and movement path of the evaporation source in the first embodiment. Similarly to FIG. 3, the odd-numbered substrates 2 may be processed by the path shown in FIG. 4, and the even-numbered substrates 2 may be processed by the opposite path. As shown in FIGS. 3 and 4, uniform film formation can be performed on the entire surface of the substrate 2 by superimposing the film thicknesses formed by approximately half of the substrate by upward movement and downward movement. At this time, high film thickness uniformity can be obtained by keeping the scanning speed constant.

  In the line-shaped evaporation source group 3, the evaporation source 3-A, the evaporation source 3-B, and the evaporation source 3-A are arranged symmetrically with respect to the film forming direction, so that almost half of the substrate 2 is formed. Therefore, it is possible to form the film without changing the film formation order by forming the upper half of the substrate 2 and moving the lower half of the substrate 2 to form a co-deposited film having a uniform composition on the entire surface of the substrate 2. can do.

  As described above, a co-deposited film having a uniform film thickness and composition can be formed on the entire surface of the substrate 2. The substrate 2 that has been formed is tilted horizontally and carried out via the substrate transfer unit 4.

  Since the evaporation source group 3 can be smaller than the size of the substrate 2, it is easy to cope with an increase in the size of the substrate 2. In addition, since both the upward movement and the downward movement can be used for film formation, the tact time can be halved as compared with an apparatus that performs co-evaporation by only one way.

  As specific examples of the first material and the second material, an example in which the first material is a film base material and the second material is an additive can be considered. When the amount of the first material formed from the evaporation source 3-A and the amount of the second material formed from the evaporation source 3-B are the same, two evaporation sources 3-A are included in one evaporation source group. Therefore, the amount of the first material is twice the amount of the second material with respect to the film formation amount from one evaporation source group. Taking advantage of this configuration, the first material that requires more is used as the film base material.

  When the amount of the second material formed from the evaporation source 3-B is much larger than the first material formed from the evaporation source 3-A, for example, by changing the size of the opening. The first material may be an additive, and the second material may be a film base material.

Up to this point, the present invention has been described with respect to the case where there are two types of deposition materials, A and B.
In addition to this, the configuration of the evaporation source group 3 includes the evaporation source 3-A, the evaporation source 3-B, the evaporation source 3-B, the evaporation source 3-A, or the evaporation source 3-A, the evaporation source 3-B, and the evaporation. The configuration of the source 3-B, the evaporation source 3-B, the evaporation source 3-A, and the like may be used. In this case, the deposition rate can be increased by increasing the number of evaporation source groups 3. Further, even when there are three or more kinds of vapor deposition materials, the configuration of the evaporation source group 3 and the film forming method may be the same as those described above. For example, if there are three types of vapor deposition materials, the first material A, the second material B, and the third material C, the configuration of the evaporation source group 3 is the evaporation source 3-A, the evaporation source 3-B, and the evaporation source 3. Five stages may be arranged in the film forming direction in the order of -C (not shown), evaporation source 3-B, and evaporation source 3-A.

  Generally expressed, an evaporation source group (first evaporation source to Nth evaporation) that moves in the first direction and deposits M kinds of materials (first material to Mth material: M is a natural number of 2 or more) on the substrate. Source: N is a natural number of 3 or more), and is deposited while moving in the first direction and the second direction (the direction opposite to the first direction), so that a co-deposited film having a uniform composition on the entire surface of the substrate 2 It is characterized by forming a film. The above-described specific example corresponds to the case where M = 2 and N = 3.

  So far, the case where the length in the longitudinal direction of the evaporation source group 3 is substantially half the length of the side in the horizontal direction of the substrate 2 has been described. Generally speaking, the present invention also applies to the case where the length of the evaporation source group 3 in the longitudinal direction is approximately 1 / K of the length of the horizontal side of the substrate 2 (K is a natural number of 2 or more). The same applies. Co-deposition of uniform film thickness and composition on the entire surface of the substrate 2 by moving in the horizontal direction by approximately 1 / K of the horizontal length of the substrate 2 in the forward path and the return path during film formation, and scanning a total of K times. It is possible to form a film. When the natural number K of 2 or more is an odd number, the evaporation source group 3 starting from the standby position below the substrate 2 finishes the film formation at the standby position above the substrate 2. Conversely, the evaporation source group 3 starting from the standby position on the upper side of the substrate 2 finishes the film formation at the standby position on the lower side of the substrate 2.

  In any case, since the evaporation source group 3 is symmetrically arranged in the film forming direction, film formation can be performed without changing the film forming order of the material by upward movement and downward movement. In particular, since the entire surface of the substrate 2 can be formed using the evaporation source group 3 that is smaller than the size of the substrate 2, there is an advantage in dealing with an increase in the size of the substrate 2.

  FIG. 5 is a schematic diagram showing the arrangement and movement path of the evaporation source when L = 4 in the first embodiment. In this case, the evaporation source group 3 forms the substrate 2 while moving upward, rightward, downward, rightward, upward, rightward, and downward.

  1 to 5, the evaporation source group 3 is composed of linear evaporation sources such as an integral linear evaporation source and a multi-evaporation source. Each evaporation source includes a crucible composed of a material chamber that encloses a vapor deposition material, a nozzle that is an injection port for steam, a heater that heats the crucible from the surroundings, and heat retention of the crucible around the heater. One or a plurality of heat shielding plates, a cooling box for preventing the heat radiation from the heater from leaking outside (flowing water-cooled water around), and opening and closing the crucible opening (nozzle) (not shown) It consists of a shutter. Further, the evaporation source may have a plate (angle control plate) for controlling the radiation angle of the vapor emitted from the nozzle. The angle control plate may be attached to any part of the evaporation source.

  1 to 4, the example in which the evaporation source group 3 moves in the upward direction and forms the film while moving in the downward direction and moves in the horizontal direction has been described. In this case, there is an advantage that the entire substrate 2 can be formed efficiently in a short time. On the other hand, [1] Control is performed in which the evaporation source group 3 is formed while moving upward, and the film is formed while moving downward with respect to the same region of the substrate 2 without moving in the horizontal direction. [2] Evaporation source The film is formed while the group 3 moves upward, and the film is formed while moving downward with respect to the same region of the substrate 2, then moves horizontally, and the evaporation source group 3 moves upward with respect to another region. It is also possible to control film formation while moving in the direction and moving in the horizontal direction. Thereby, it is possible to form a film twice on the same region of the substrate 2 as needed. An important feature of the present invention is that film formation is possible without changing the film formation sequence even if the moving direction of the evaporation source group 3 is different.

  Further, as an example of the horizontal direction, the movement in the right direction is mainly given as an example, but there is no particular problem even if the evaporation source group 3 moves in the left direction.

  Moreover, although the example which forms a film after standing the board | substrate 2 so far was demonstrated, it is also possible to form a film, with the board | substrate 2 lying down sideways. At this time, each figure may be considered as a figure viewed from above from above.

<Vacuum deposition apparatus with two evaporation sources>
FIG. 6 is a schematic diagram showing the arrangement of the evaporation source group 3 and the movement path 6 of the vacuum evaporation apparatus in the second embodiment. The length of the evaporation source group 3 in the longitudinal direction is approximately a quarter of the horizontal distance of the substrate 2 (1/3 or less, 1/4 or more). The evaporation source groups 3 are arranged symmetrically along the film forming direction, and are arranged in the longitudinal direction at a predetermined interval (approximately one half of the length of the horizontal side of the substrate). Each evaporation source may individually have a holding and moving mechanism, or the evaporation source group 3 may be controlled by one holding and moving mechanism.

  The evaporation source group 3 performs film formation while moving up and down in the vertical direction, and has a pitch (approximately one-third or less of the length of the substrate 2 in the horizontal direction between the upward movement and the downward movement) in the horizontal direction. (Over a quarter), the entire surface of the substrate 2 can be formed by a total of two scans. For example, as shown in FIG. 6, the evaporation source group 3 forms substantially half of the film of the substrate 2 while moving upward in a vertical direction from a standby position lower than the lower side of the substrate 2. Then, when the position of the evaporation source group 3 is higher than the upper side of the substrate 2, the horizontal length of the substrate 2 is moved approximately one-fourth (less than one third or less than one fourth) in the horizontal direction. Then, the remaining half of the substrate 2 is deposited while moving downward in the vertical direction. Then, when the position of the evaporation source group 3 is lower than the lower surface of the substrate 2, the horizontal length of the substrate 2 is moved approximately one-fourth (less than one third or less than one fourth) in the horizontal direction. Then, it returns to the standby position before the substrate 2 is formed.

  Alternatively, the odd-numbered substrates 2 may be processed by the movement path 6 similar to FIG. 3, and the even-numbered substrates 2 may be processed by the reverse path. Similarly, the odd-numbered substrates 2 may be processed by a route similar to FIG. 4, and the even-numbered substrates 2 may be processed by the opposite route. A uniform film thickness can be formed on the entire surface of the substrate 2 by superimposing the film thicknesses formed approximately half of the substrate by the upward movement and the downward movement. At this time, high film thickness uniformity can be obtained by keeping the scanning speed constant. The substrate 2 that has been formed is tilted horizontally and carried out via the substrate transfer unit 4.

  Further, the three-stage line-shaped evaporation source arranged along the film forming direction includes an evaporation source 3-A for storing the first material A, an evaporation source 3-B for storing the second material B, in order from the top. It comprises an evaporation source 3-A that stores the first material A. They are arranged symmetrically with respect to the film forming direction. Therefore, a co-deposited film having a uniform composition is formed on the entire substrate 2 without changing the film formation sequence between the path for depositing approximately half of the substrate 2 and the path for depositing approximately half of the remaining substrate 2. can do.

  In this way, the present embodiment can shorten the horizontal movement distance of the evaporation source group 3 as compared with the first embodiment, so that the tact time can be further shortened and the productivity can be improved.

  As described above, the length of the evaporation source group 3 in the longitudinal direction is approximately a quarter (less than or equal to 3 minutes or less than a quarter) of the length of the horizontal side of the substrate 2 and a predetermined interval in the longitudinal direction ( The case where it is provided at approximately one half of the length of the horizontal side of the substrate has been described. Similarly, the length in the longitudinal direction of the evaporation source group 3 is approximately 1 / N (less than (1 / N-1), more than 1 / N) of the length of the side in the horizontal direction of the substrate 2. The present invention can be similarly applied to a case where the predetermined distance is provided in the direction (approximately 1 / M of the length of the horizontal side of the substrate 2). Here, the natural number N of 4 or more is a multiple of the natural number M of 2 or more, and the natural number M is a divisor of the natural number N (N / M is a natural number). When repeating the film formation in the vertical direction, the evaporation source group 3 is moved in the horizontal direction by a predetermined pitch (approximately 1 / N of the horizontal length of the substrate 2) between the upward movement and the downward movement. To form a film. By repeating the scanning a total of M times (N / M is a natural number), a co-deposited film having a uniform composition can be formed on the entire surface of the substrate 2.

  Further, the evaporation source group 3 is not limited to the three-stage configuration, and has a plurality of or plural openings that move in the first direction and deposit the first to M-th materials on the substrate 2 as in the first embodiment. The first to Nth evaporation sources (M is a natural number of 2 or more, N is a natural number of 3 or more), and are symmetrically installed in the first direction and the second direction (the reverse direction of the first direction), By forming the film while moving together, a co-deposited film having a uniform composition is formed on the entire surface of the substrate 2.

<Double alignment type vacuum deposition system>
In Example 3, two systems of a right R line and a left L line are provided in one vacuum chamber, and the first substrate and the second substrate are alternately carried into the vacuum chamber 1 to perform alignment, standing up, and film formation. Further, the present invention relates to a vacuum deposition apparatus that can reduce the cycle time by half.

  FIG. 7 is a schematic diagram showing Example 3 of the present invention. The vacuum deposition apparatus shown in FIG. 7 includes a substrate delivery unit 4 for maintaining a vacuum between a vacuum chamber 1 maintained in a vacuum and a transfer chamber (not shown), two sets of substrates 2-A, and a substrate 2. -B It is comprised from the linear evaporation source group 3 which consists of 3 steps | paragraphs. The length in the longitudinal direction of the evaporation source group 3 is preferably longer than the length of the horizontal side of the substrate 2. The evaporation source group 3 includes linear evaporation sources such as an integral linear evaporation source and a multi-evaporation source.

  The 1st board | substrate 2 carried in from the board | substrate delivery part 4 aligns with a board | substrate holder (not shown), and stands substantially vertically with a board | substrate holder (not shown). The evaporation source group 3 performs film formation while moving up and down in the vertical direction. While the first substrate 2 is being vapor-deposited, the other substrate transfer section 4 carries out the substrate 2 that has been previously formed, carries the second substrate 2 into the vacuum chamber 1, and the substrate holder Alignment is performed and the substrate holder is set up substantially vertically. When film formation of the first substrate 2 is finished, the evaporation source group 3 used for film formation of the first substrate 2 moves in the horizontal direction from the first substrate 2 to the second substrate 2 and starts film formation. During deposition of the second substrate 2, the first substrate 2 that has been formed is tilted horizontally and is carried out of the vacuum chamber 1 via the substrate delivery unit 4.

  By repeating the above cycle, alignment and film formation can proceed simultaneously in one vacuum chamber 1. The tact time can be halved compared to an apparatus that performs alignment and film formation one by one.

FIG. 8 is a schematic diagram illustrating the arrangement and movement paths of the evaporation sources in the third embodiment. The evaporation source group 3 deposits the substrate 2 while moving vertically upward from a standby place lower than the lower side of the substrate 2.
Then, when the position of the evaporation source group 3 becomes higher than the upper side of the substrate 2, the substrate 2 is moved to the adjacent substrate 2 in the horizontal direction, and then the substrate 2 is formed while moving downward in the vertical direction. When the position of the evaporation source group 3 becomes lower than the lower surface of the substrate 2, it moves in the horizontal direction and returns to the adjacent substrate 2, that is, the standby position before film formation. The length in the longitudinal direction of the evaporation source group 3 is preferably longer than the length of the side of the substrate 2 in the horizontal direction. Thus, a uniform film thickness can be formed on the entire surface of the substrate 2 by one-way scanning. At this time, high film thickness uniformity can be obtained by keeping the scanning speed constant.

  At this time, the three-stage linear evaporation source group 3 arranged along the film forming direction includes an evaporation source 3-A for storing the first material A and an evaporation source for storing the second material B in order from the top. 3-B, comprising an evaporation source 3-A for storing the first material. These are arranged symmetrically with respect to the film forming direction. Therefore, the first substrate 2 and the second substrate 2 are co-deposited with the same composition without changing the film formation order between the path for forming the first substrate 2 and the path for forming the second substrate 2. A film can be formed. In this case, since both the upward movement and the downward movement can be used for film formation, the tact time can be halved as compared with an apparatus that performs co-evaporation by only one way.

  The case where the length in the longitudinal direction of the line-shaped evaporation source group 3 is roughly the length of the side in the horizontal direction of the substrate 2 has been described above. In addition to this, the present invention can be similarly applied to the case where the length in the longitudinal direction of the line-shaped evaporation source group 3 is approximately 1 / N of the length of the side in the horizontal direction of the substrate 2.

  By moving up and down during film formation, the substrate 2 moves in the horizontal direction by approximately 1 / N of the horizontal length, and the entire substrate 2 can be formed by a total of N scans. When N, which is a natural number of 2 or more, is an odd number, the evaporation source group 3 starting from the standby position below the substrate 2 finishes the film formation at the standby position above the substrate 2. Conversely, the evaporation source group 3 starting from the standby position on the upper side of the substrate 2 finishes the film formation at the standby position on the lower side of the substrate 2. After the film formation of the first substrate 2 is thus completed, the film is moved to the adjacent substrate 2 and the film formation of the second substrate 2 is started again. When the film formation of the second substrate 2 is completed, the second substrate 2 is moved to the adjacent first 'substrate 2 again. By repeating the above cycle, alignment and film formation can proceed simultaneously in one vacuum chamber 1. The tact time can be halved compared to an apparatus that performs alignment and film formation one by one. In any case, since the evaporation source group 3 is symmetrically arranged in the film forming direction in this case, the film can be formed without changing the film forming order by moving up and down. In particular, in this case, since the entire surface of the substrate 2 can be formed using the evaporation source group 3 that is relatively small compared to the size of the substrate 2, it is easy to cope with an increase in the size of the substrate 2.

  As described above, two systems of the right R line and the left L line are provided in the vacuum chamber 1 and another substrate 2 is formed during the alignment of one substrate 2, thereby reducing the cycle time by half. Explained the case. Similarly, a plurality of substrates 2 are included in the vacuum chamber 1, while the first substrate 2 is being deposited, the second substrate 2 is carried into the vacuum chamber 1, and another deposition is completed. The present invention can also be applied when the substrate 2 is unloaded from the vacuum chamber 1.

<Double-alignment vacuum evaporation system for multilayer film formation>
Example 4 is an example in the case of multilayer film formation in a vacuum evaporation apparatus employing the double alignment method of Example 3. It is not particularly limited to co-evaporation.

  FIG. 9 is a schematic diagram showing the arrangement of the evaporation source group 3 and the movement path 6 of the vacuum evaporation apparatus in the fourth embodiment.

  The evaporation source group 3 deposits the substrate 2 while moving vertically upward from a standby place lower than the lower side of the substrate 2. At that time, the vapor emitted from the lowermost (or uppermost) evaporation source 3-A in the evaporation source group 3 is shielded by the shutter 7 so as not to reach the substrate 2. Then, when the position of the evaporation source group 3 becomes higher than the upper side of the substrate 2, it is folded back.

  Subsequently, the substrate 2 is formed while moving downward in the vertical direction. At that time, the vapor emitted from the uppermost (or lowermost) evaporation source 3-A in the evaporation source group 3 is shielded by the shutter 7 so as not to reach the substrate 2. When the position of the evaporation source group 3 becomes lower than the lower surface of the substrate 2, the film formation of the substrate 2 is finished.

  The evaporation source group 3 includes linear evaporation sources such as an integral linear evaporation source and a multi-evaporation source. The length in the longitudinal direction of the evaporation source group 3 is preferably longer than the length of the side of the substrate 2 in the horizontal direction. Thereby, a uniform film thickness can be formed on the entire surface of the substrate 2. Moreover, high film thickness uniformity can be obtained by keeping the scanning speed constant.

  The three-stage linear evaporation source group 3 arranged along the film forming direction includes an evaporation source 3-A for storing the first material A and an evaporation source 3-B for storing the second material B in order from the top. The evaporation source 3-A for storing the first material is arranged symmetrically with respect to the film forming direction. A thin film is formed on the first substrate 2 in the order of the first material A and the second material B by film formation while the evaporation source group 3 is moving upward. Similarly, a thin film is formed on the second substrate 2 in the order of the first material A and the second material B by film formation while the evaporation source group 3 is moving downward. As described above, the deposition order of the vapor deposition material is not changed between the upward movement of forming the first substrate 2 and the downward movement of forming the second substrate 2, so that the first substrate 2 and the second substrate 2 are not changed. The same multilayer film can be formed together with the substrate 2. In addition, since both the upward movement and the downward movement of the evaporation source group can be used for film formation, the tact time can be halved compared to the case where multilayer film formation is performed only by one way.

  Although the case where two layers are formed on the substrate in one vacuum chamber 1 has been described above, the same applies to the case where two or more layers are formed. Although the case where two substrates 2 are formed in one vacuum chamber 1 has been described, the same applies to the case where two or more substrates 2 are formed.

<Vacuum vapor deposition apparatus that forms a film while the evaporation source moves in the horizontal direction>
In Examples 1 to 4, an example of a vacuum deposition apparatus that forms a film while the evaporation source moves in the horizontal direction has been described. In Example 5, a vacuum deposition apparatus that forms a film while the evaporation source moves in the horizontal direction has been described. An example will be described. In adopting this evaporation source control, the configuration of FIG. 1 may be used. Here, description is omitted for simplification.

  FIG. 10 is a schematic diagram showing the arrangement and movement path of the evaporation source in the fifth embodiment. The evaporation source group 3 forms a film on the substrate 2 while moving in the horizontal direction (left and right direction), and moves between right movement (referred to as movement in the right direction) and left movement (referred to as movement in the left direction). The entire substrate 2 is scanned by moving in the vertical direction (vertical direction) by approximately half the length of the substrate 2.

  For example, as shown in FIG. 10, the evaporation source group 3 forms a film on substantially half (upper half) of the substrate 2 while moving in the right direction from the standby position outside the left end of the substrate 2 (S101). When the evaporation source group 3 reaches the outside from the right end of the substrate 2, it moves by about half the length of the substrate 2 downward in the vertical direction (up and down direction) (S 102). Thereafter, the remaining half (lower half) of the substrate 2 is formed while moving leftward (S103). When the evaporation source group 3 reaches the outside from the left end of the substrate 2, it moves upward by approximately half the length of the substrate 2 and returns to the standby position before film formation (S104).

  As described above, since the evaporation source group 3 is arranged symmetrically in the film forming direction, it is possible to form a film without changing the film forming order of the material by moving right and moving left. Note that the various configurations described in the first to fourth embodiments can be applied to a vacuum deposition apparatus that forms a film while the evaporation source moves in the horizontal direction.

In the first to fifth embodiments, the case where the evaporation source group 3 has a three-stage configuration of the evaporation source 3-A, the evaporation source 3-B, and the evaporation source 3-A as illustrated in FIG. did. In the sixth embodiment, some specific examples of the configuration of the other evaporation source group 3 are shown. Of course, it goes without saying that various other forms can be adopted.
As shown in FIG. 11B, the evaporation source group 3 may have a configuration of two evaporation sources 3-A, an evaporation source 3-B, and two evaporation sources 3-A. In this case, the deposition rate of the material A can be increased as the number of evaporation sources 3-A increases. Further, as shown in FIG. 11C, the evaporation source group 3 may be configured to be an evaporation source A, two evaporation sources 3-B, and an evaporation source 3-A. In this case, the vapor deposition rate of the material B can be increased as the number of evaporation sources 3-B increases.

Further, the evaporation source group 3 may be composed of a combination of a linear evaporation source and a multi-evaporation source, as shown in FIG. 11 (4) or FIG. 11 (5). Thus, it is possible to cope with film formation of various materials.
In any case, since the evaporation source group 3 is symmetrically arranged in the film forming direction, as in the first to fifth embodiments, the material is formed by moving in the film forming direction and in the opposite direction. Since it is possible to form a film without changing the order, a co-deposited film having a uniform composition can be formed on the entire substrate 2.

DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 Substrate 3 Evaporation source group 3-A, 3-B Evaporation source 4 Substrate delivery part 5 Nozzle 6 Movement path 7 Shutter

Claims (13)

In a vacuum deposition apparatus for depositing a deposition material on a substrate,
It has an evaporation source group in which a plurality of linear evaporation sources are arranged so as to be symmetric with respect to the film forming direction,
The evaporation source group is formed while moving in the first direction with respect to the substrate, and then formed while moving in the second direction opposite to the first direction with respect to the substrate. Vacuum deposition equipment. In the vacuum evaporation system according to claim 1,
The evaporation source group includes a first evaporation source for depositing a first material, a second evaporation source for depositing a second material different from the first material, and a third evaporation source for depositing the first material. And
The vacuum evaporation apparatus, wherein the second evaporation source is provided between the first evaporation source and the third evaporation source. In the vacuum evaporation system according to claim 2,
The evaporation source group is configured by arranging a first evaporation source, a second evaporation source, and a third evaporation source in the vertical direction,
The vacuum deposition apparatus, wherein the first direction is an upward direction or a downward direction. The vacuum evaporation apparatus according to claim 3,
The evaporation source group moves in the left-right direction after moving in the first direction and before moving in the second direction. In the vacuum evaporation system according to claim 2,
The evaporation source group includes a first evaporation source, a second evaporation source, and a third evaporation source arranged in the left-right direction,
The vacuum deposition apparatus, wherein the first direction is a left direction or a right direction. In the vacuum evaporation apparatus of Claim 5,
The vacuum evaporation apparatus is characterized in that the evaporation source group moves in the vertical direction after moving in the first direction and before moving in the second direction. In the vacuum evaporation system of Claim 4 or 6,
The vacuum evaporation apparatus, wherein the evaporation source group deposits the substrate by repeatedly moving in the first direction, the third direction, and the second direction. In a vacuum deposition apparatus for depositing a deposition material on a plurality of substrates,
It has an evaporation source group in which a plurality of linear evaporation sources are arranged so as to be symmetrical with respect to the vertical direction,
The installation position of the first board and the installation position of the second board are aligned in the left-right direction,
The evaporation source group is formed while moving in the first direction with respect to the first substrate, and is then formed while moving in the second direction opposite to the first direction with respect to the second substrate,
The vacuum deposition apparatus, wherein the first direction is an upward direction or a downward direction. In the vacuum evaporation system according to claim 8,
The evaporation source group includes a first evaporation source for depositing a first material, a second evaporation source for depositing a second material different from the first material, and a third evaporation source for depositing the first material. And
The vacuum evaporation apparatus, wherein the second evaporation source is provided between the first evaporation source and the third evaporation source. In the vacuum evaporation system according to claim 8 or 9,
A vacuum deposition apparatus, wherein the second substrate and a substrate holder for holding the second substrate are aligned during the formation of the first substrate. In the vacuum evaporation system according to any one of claims 8 to 10,
The evaporation source group moves in the left-right direction after moving in the first direction and before moving in the second direction. In the vacuum evaporation system in any one of Claims 1 thru | or 11,
The evaporation source group has a shutter that can be opened and closed at an opening for injecting the first material or the second material,
The evaporation source group is:
When moving in the first direction, open the shutter of the first evaporation source and the shutter of the second evaporation source, close the shutter of the third evaporation source,
When moving in the second direction, the vacuum evaporation apparatus is characterized in that the shutter of the first evaporation source is closed and the shutter of the second evaporation source and the shutter of the third evaporation source are opened. The vacuum evaporation apparatus according to any one of claims 1 to 12,
The vacuum deposition apparatus, wherein the first material is a film base material and the second material is an additive.