KR20130115139A - Vacuum evaporation apparatus - Google Patents

Abstract

PURPOSE: A vacuum deposition device is provided to arrange a plurality of linear evaporation sources in multiple stages toward a deposition direction and to enable the vacuum deposition without changing a deposition order of an outward passage and an inward passage. CONSTITUTION: A vacuum deposition device includes a vertically erect substrate (2), a linear evaporation source group (3) of three stages, and a substrate exchanging unit. The substrate and the evaporation source group are arranged inside a vacuum chamber (1). The substrate sent by the substrate exchanging unit is aligned with a substrate holder, and the substrate and the substrate holder are vertically erect. The linear evaporation source group is composed of three stages of: an evaporation source (3-A) storing a first material; an evaporation source (3-B) storing a second material; and an evaporation source storing a first material in order according to a deposition direction. [Reference numerals] (AA) Vertical direction; (BB) Horizontal direction

Description

Vacuum vapor deposition apparatus {VACUUM EVAPORATION APPARATUS}

The present invention relates to a vacuum deposition apparatus.

In recent years, organic EL devices have attracted attention as new industrial fields. Organic EL displays are expected as next-generation displays replacing liquid crystal displays and plasma displays, and organic EL lighting as next-generation lighting comparable to LED lighting.

The organic EL device has a multilayer structure in which a light emitting layer made of an organic compound, a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like are sandwiched by an electrode pair composed of an anode and a cathode. It is. By applying a voltage to the electrode, holes are injected from the anode side, and electrons are injected from the cathode side into the light emitting layer, and light is emitted by deactivation of excitons (excitons) generated by recombination.

Organic materials for forming the light emitting layer include a polymer material and a low molecular material. Among these, the mainstream low molecular weight material is formed by vacuum deposition. Vacuum deposition is also used when forming other layers. Doping and alloying by co-deposition are also performed for performance improvement (patent document 1).

The evaporation source used for vacuum deposition has a crucible for encapsulating the vapor deposition material, a nozzle for ejecting the vapor deposition material, a heater for heating the crucible, and a housing for storing the crucible, the nozzle, the heater and the like. The vapor deposition material is evaporated or sublimed from the crucible heated by the heater, and vaporized vapor deposition material is sprayed from the nozzle onto the substrate provided in the vacuum chamber to form each layer. In order to manufacture the organic electroluminescent element of a color display, in order to align a board | substrate and a metal mask, the organic electroluminescent material which carries out different light emission is apply | coated for each pixel, and is formed into a film.

Organic EL elements have a demand for larger substrate sizes with larger display devices and lighting devices. Substrate size is expanded from the current 4.5th generation manufacturing line (glass substrate dimension: 730 mm x 920 mm) to the 5.5th generation manufacturing line (substrate size is 1300 mm x 1500 mm), which is 2.9 times larger than the substrate size. This is also expected in the eighth generation manufacturing line (glass substrate dimensions: 2200 mm × 2500 mm).

In order to cope with the enlargement of the substrate size, various forms of evaporation sources, such as a linear evaporation source and a planar evaporation source, have been put into practical use. From the standpoint of scalability with respect to the substrate size, a linear evaporation source is more preferable than the planar shape. The linear evaporation source can form a uniform thin film on the substrate by relatively moving along the substrate in a direction perpendicular to the longitudinal direction. Examples of the linear evaporation source include a linear evaporation source of an integrated body having a plurality of nozzles and a multi-evaporation source in which a plurality of evaporation source units having a plurality of nozzles are provided in a line shape in the longitudinal direction.

The line-shaped evaporation source can be formed on the entire surface of the substrate by a one-way scan when the dimension in the longitudinal direction is approximately the substrate size. When the dimension of the longitudinal direction is smaller than the board | substrate size, it can form into the whole surface of a board | substrate by moving to arbitrary pitches in a longitudinal direction between a path | route and a path | route.

Japanese Patent No. 3718482

In co-deposition, a plurality of evaporation sources are installed in the same vacuum chamber and different materials are placed in different evaporation sources. In the case of co-deposition with a linear evaporation source, for example, it is conceivable to arrange a plurality of linear evaporation sources in multiple stages along the film formation direction. However, when the reciprocal film forming is performed in such a configuration, the film forming order is reversed in the return path and the return path. For this reason, when forming into a board | substrate location different in a path | route and a return path, there exists a subject that a composition ratio differs in a board | substrate surface. In this respect the solution according to the invention is described below.

Features of the present invention for solving the above problems are as follows. A vacuum vapor deposition apparatus for depositing a vapor deposition material on a substrate, the vacuum vapor deposition apparatus comprising: an evaporation source group in which a plurality of line-shaped evaporation sources are arranged symmetrically with respect to the deposition direction, wherein the evaporation source group is formed while moving in a first direction with respect to the substrate. Thereafter, the film is formed while moving in the second direction opposite to the first direction with respect to the substrate.

In the vacuum vapor deposition apparatus of the present invention, a plurality of line-shaped evaporation sources prepared according to the type of vapor deposition material are arranged to be symmetrical with respect to the film formation direction (and the reverse direction), and the co-deposition film is changed without changing the order of film formation in the return path and the return path. Can be formed. Therefore, by forming a reciprocating film with respect to the first direction and moving along the substrate surface in a second direction that is substantially orthogonal between the return path and the return path, the composition ratio can be made uniform when forming the film at different substrate positions in the return path and the return path. In addition, a uniform co-deposited film can be formed on a larger substrate with a film thickness and composition.

BRIEF DESCRIPTION OF THE DRAWINGS The structure in the vacuum chamber of the vacuum vapor deposition apparatus in Example 1;
FIG. 2 is a schematic diagram showing the arrangement and movement paths of an evaporation source in Example 1. FIG.
Fig. 3 is a schematic diagram showing the arrangement and movement paths of the evaporation source in Example 1;
Fig. 4 is a schematic diagram showing the arrangement and movement paths of the evaporation source in Example 1;
Fig. 5 is a schematic diagram showing the arrangement and movement paths of the evaporation source in Example 1;
6 is a schematic diagram showing an arrangement and a movement path of an evaporation source in Example 2. FIG.
7 is a configuration in a vacuum chamber of the vacuum vapor deposition apparatus in Example 3. FIG.
8 is a schematic diagram illustrating an arrangement and a movement path of an evaporation source in Example 3. FIG.
9 is a schematic diagram showing an arrangement and a movement path of an evaporation source in Example 4. FIG.
10 is a schematic diagram showing an arrangement and a movement path of an evaporation source in Example 5. FIG.
11 is a schematic diagram showing the arrangement of an evaporation source in Example 6. FIG.

EMBODIMENT OF THE INVENTION Hereinafter, the Example of this invention is described using drawing. Hereinafter, as an example of the vacuum vapor deposition apparatus of this invention, the example applied to manufacture of organic electroluminescent device is demonstrated. The following description shows specific examples of the contents of the present invention, and the present invention is not limited to these descriptions, and various changes and modifications by those skilled in the art can be made within the scope of the technical idea disclosed herein. For example, the vapor deposition material is not limited to an organic material, and a metal material, an inorganic material, and other materials can be used. Co-deposition can also be applied in various cases, such as doping, alloy formation, and the like.

Example 1

<Vacuum vapor deposition apparatus with one evaporator group>

1 is a schematic view showing the configuration of a part (in a vacuum chamber) of a vacuum vapor deposition apparatus in Example 1. FIG. In the vacuum chamber 1 maintained in vacuum, the board | substrate 2 standing upright and the evaporation source group 3 of the line shape which consists of three steps are arrange | positioned. The board | substrate 2 carried in from the board | substrate sending / receiving part 4 provided in order to hold | maintain a vacuum between a conveyance chamber (not shown) performs alignment with a board | substrate holder (not shown), and the board | substrate 2 and a board | substrate holder Is erected approximately vertically. In this embodiment, an example of a substrate holder serving as a metal mask patterned on a lattice for each chamfer size is shown. In addition, in the Example shown in FIG. 1, a vertical direction is made into the film-forming direction, and a horizontal direction is made to correspond to the longitudinal direction of the line-shaped evaporation source group 3. Forward and reverse are not particularly distinguished unless necessary.

The evaporation source group 3 in a line shape stores the evaporation source 3-A for storing the first material, the evaporation source 3-B for storing the second material B, and the first material in order along the film formation direction. It consists of three stages of the evaporation source (3-A). Here, the second material is a material different from the first material. As the evaporation source 3-A and the evaporation source 3-B, for example, a linear evaporation source, a multi-evaporation source, or the like is used. The line-shaped evaporation source has a longitudinal direction, and its length is about half of the length of the horizontal side of the substrate 2. Preferably, it is shorter than the length of the horizontal side of the board | substrate 2, and may be longer than the length of the half.

Fig. 2 is a schematic diagram showing the arrangement and movement paths of the evaporation source in Example 1; 2 is a view of the substrate 2 from the substrate exchange part 4. 3, 4, 5, 6, 8, 9, and 10, which will be described later, show the substrate 2 from the substrate exchange part 4 in the same manner. The evaporation source group 3 forms a film on the substrate 2 while moving up and down in the vertical direction, and moves up (upward movement) and high down movement (downward movement). The whole of the board | substrate 2 is scanned by moving about half of the length of the board | substrate 2 in a horizontal direction.

For example, as shown in FIG. 2, the evaporation source group 3 forms about half (left half) of the board | substrate 2, moving vertically from the standby position lower than the lower side of the board | substrate 2 in a vertical direction. (S21). When the position of the evaporation source group 3 becomes higher than the upper side of the substrate 2, the substrate 2 moves by about half of the length of the substrate 2 to the right in the horizontal direction (left and right directions) (S22). Subsequently, film formation is carried out in approximately half (right half) of the remaining substrate 2 while moving in the vertical direction (S23). At the time when the position of the evaporation source group 3 is lower than the lower side of the substrate 2, the substrate 2 is moved by about half of the length of the substrate 2 to the left in the horizontal direction (left and right directions). The process returns to the previous standby position (S24).

Fig. 3 is a schematic diagram showing the arrangement and movement paths of the evaporation source in Example 1; The movement path 6 of the evaporation source group 3 is not limited to the above. For example, the odd numbered board | substrate 2 may be processed by the movement path 6 shown in FIG. 3, and the even numbered board | substrate 2 may be processed by the opposite movement path 6. As shown in FIG.

FIG. 4 is a schematic diagram showing the arrangement and movement paths of the evaporation source in Example 1. FIG. As in FIG. 3, the odd numbered substrates 2 may be processed by the path shown in FIG. 4, and the even numbered substrates 2 may be processed in the opposite path. As shown in Fig. 3 and Fig. 4, uniform film formation is possible on the entire surface of the substrate 2 by the overlapping of the film thicknesses formed by about half of the substrate in phase movement and high motion. At this time, high film thickness uniformity can be obtained by keeping the scanning speed constant.

The evaporation source group 3 in a line shape has about half of the substrate 2 because the evaporation source 3-A, the evaporation source 3-B, and the evaporation source 3-A are arranged symmetrically with respect to the film formation direction. In the phase movement to form the film and the high copper to form the other half of the substrate 2, the film can be formed without changing the order of material deposition. Thus, a co-deposition film having a uniform composition can be formed on the entire surface of the substrate 2. have.

By the above, a uniform co-deposition film | membrane of both a film thickness and a composition can be formed into the whole surface of the board | substrate 2. As shown in FIG. The board | substrate 2 which finished film-forming is knocked down horizontally, and is carried out through the board | substrate sending / receiving part 4.

Since the evaporation source group 3 can use a smaller one than the substrate 2 size, it is easy to cope with the increase in the size of the substrate 2. In addition, since both phase movement and high movement can be used for film formation, the tact time can be reduced by half compared to the apparatus which performs co-deposition only in one way.

As a specific example of a 1st material and a 2nd material, the example in which a 1st material is a film | membrane base material and a 2nd material as an additive material can be considered. When the amount of the first material deposited from the evaporation source 3-A and the second material formed from the evaporation source 3-B is the same, two evaporation sources 3-A are provided in one evaporation source group. For this reason, the amount of the first material is twice the amount of the second material with respect to the amount of film formation from one evaporation source group. Taking advantage of this configuration, the first material that requires more is used as the film base material.

Further, when the amount of the second material formed from the evaporation source 3-B is much higher than that of the first material formed from the evaporation source 3-A, such as changing the size of the opening, the first material may be added to the first material. 2 material may be used as a film base material.

So far, the present invention has been described with respect to the case where the types of vapor deposition materials are two types, A and B. FIG. The constitution of the evaporation source group 3 is, besides, the evaporation source (3-A), the evaporation source (3-B), the evaporation source (3-B), the evaporation source (3-A), or the evaporation source (3-A), the evaporation source (3). -B), evaporator (3-B), evaporation source (3-B), evaporation source (3-A), etc. may be sufficient. In this case, the deposition rate can be increased by increasing the number of evaporation source groups 3. In addition, even when the kind of vapor deposition material is three types or more, the structure and the film-forming method of the evaporation source group 3 should just follow the above. For example, if there are three kinds of vapor deposition materials, the first material (A), the second material (B), and the third material (C), the configuration of the evaporation source group 3 may include the evaporation source (3-A), What is necessary is just to arrange | position five steps in the film-forming direction in order of evaporation source 3-B, evaporation source 3-C (not shown), evaporation source 3-B, and evaporation source 3-A.

In general terms, the evaporation source group (first evaporation source to Nth evaporation source: N), which moves in the first direction and deposits M kinds of materials (first material to Mth material: M is two or more natural water) on the substrate 3 or more natural numbers), and forming a co-deposition film having a uniform composition on the entire surface of the substrate 2 by forming the film while moving in the first direction and the second direction (the direction opposite to the first direction). The above-mentioned specific example corresponds to the case of M = 2 and N = 3.

The case where the length of the evaporation source group 3 in the longitudinal direction is about half the length of the side of the substrate 2 in the horizontal direction has been described. Generally speaking, the present invention also relates to a case in which the length in the longitudinal direction of the evaporation source group 3 is about one-K (K is two or more natural numbers) of the length of the horizontal side of the substrate 2. Can be applied as well. The co-deposited film having a uniform film thickness and composition on the entire surface of the substrate 2 by moving about one-quarter of the length in the horizontal direction of the substrate 2 in the back and forth paths during the film formation, and in a total of K scans. It is possible to deposit the film. When two or more natural water K is an odd number, the evaporation source group 3 which started from the standby position below the board | substrate 2 completes film-forming at the standby position above the board | substrate 2. On the contrary, the evaporation source group 3 starting from the standby position above the substrate 2 finishes film formation at the standby position below the substrate 2.

In any case, since the evaporation source group 3 is symmetrically arranged in the film formation direction, the film can be formed without changing the order of material deposition in the phase shift and the high motion. In particular, since the whole surface of the board | substrate 2 can be formed into a film using the evaporation source group 3 smaller than the size of the board | substrate 2, there exists an advantage also in responding to the enlargement of the board | substrate 2.

It is a schematic diagram which shows the arrangement | positioning and the movement path of the evaporation source in the case of L = 4 in Example 1. FIG. In this case, the evaporation source group 3 forms the substrate 2 while moving in an upward direction, a right direction, a downward direction, a right direction, an upward direction, a right direction, and a downward direction.

1 to 5, the evaporation source group 3 is composed of a linear evaporation source such as a linear evaporation source or a multi-evaporation source that is an integrated body. Each evaporation source includes a crucible composed of a material chamber encapsulating a vapor deposition material, a nozzle configured as a nozzle for steam, a heater for heating the crucible around, and one or more sheets for improving the thermal insulation of the crucible on the outer periphery of the heater. Heat shield plate, a cooling box (not allowing the cold water to flow around) to prevent heat radiation from the heater from leaking to the outside, and a shutter for opening and closing the opening (nozzle) of the crucible (not shown). And so on. The evaporation source may also have a plate (angle control panel) that controls the radiation angle of the steam exiting the nozzle. The angle control board may be attached to any part of the evaporation source.

In addition, in FIG. 1 to FIG. 4, an example in which the evaporation source group 3 is formed while moving in the upward direction and the film is moved in the horizontal direction while being formed while moving in the downward direction has been described. At this time, there is an advantage that the entire substrate 2 can be formed efficiently in a short time. On the other hand, [1] the evaporation source group 3 is formed while the film is moving in the upward direction, does not move in the horizontal direction, and is formed while the film is moved in the downward direction with respect to the same region of the substrate 2, [2] the evaporation source group ( 3) is formed while moving upward, and is formed while moving downward with respect to the same region of the substrate 2, then moves horizontally, and the evaporation source group 3 moves upward with respect to the other region. It is possible to control the film formation while moving in the horizontal direction. Thereby, as needed, it can form into a film twice up and down with respect to the same area | region of the board | substrate 2. As shown in FIG. An important feature of the present invention is that the film can be formed without changing the film forming order of the material even if the moving direction of the evaporation source group 3 is different.

In addition, although the movement to the right direction was mainly mentioned as an example of a horizontal direction, there is no problem even if the evaporation source group 3 moves to the left direction.

In addition, although the example which formed the film after setting up the board | substrate 2 was demonstrated so far, it is also possible to form into a film, leaving the board | substrate 2 sideways. At this time, it is good to consider each drawing as the figure which looked at a negative impression from the upper direction.

[Example 2]

<Vacuum vapor deposition apparatus with two evaporator groups>

FIG. 6: is a schematic diagram which shows arrangement | positioning and the movement path 6 of the evaporation source group 3 of the vacuum vapor deposition apparatus in Example 2. FIG. The length of the evaporation source group 3 in the longitudinal direction is about one quarter (less than one third, one quarter or more) of the horizontal distance of the substrate 2. The evaporation source group 3 is arranged symmetrically along the film-forming direction, and is arranged in the longitudinal direction at predetermined intervals (about 1/2 of the length of the side in the horizontal direction of the substrate). Each evaporation source may have a holding and moving mechanism, respectively, or the evaporation source group 3 may be controlled by one holding and moving mechanism.

The evaporation source group 3 performs film formation while moving up and down in the vertical direction, and has a pitch (about one third or less of about one quarter of the length of the substrate 2 in the horizontal direction between the vertical movement and the high dynamic, By moving one quarter or more), the whole surface of the board | substrate 2 can be formed into two films in total. For example, as shown in FIG. 6, about half of the substrate 2 is formed while the evaporation source group 3 moves upward in the vertical direction from an atmospheric position lower than the lower side of the substrate 2. When the position of the evaporation source group 3 becomes higher than the upper side of the substrate 2, about one quarter (one third or less, four quarters of the length in the horizontal direction of the substrate 2 in the horizontal direction) 1 or more), and after that, about half of the substrate 2 is formed while moving downward in the vertical direction. When the position of the evaporation source group 3 is lower than the lower surface of the substrate 2, about one quarter (one third or less, four quarters of the length in the horizontal direction of the substrate 2 in the horizontal direction) 1 or more), and it returns to the standby position before the board | substrate 2 film-forming.

Alternatively, the odd numbered substrates 2 may be processed in the movement path 6 similar to FIG. 3, and the even numbered substrates 2 may be processed in the opposite path. Similarly, the odd numbered substrates 2 may be processed in a path similar to that of FIG. 4, and the even numbered substrates 2 may be processed in the opposite path. By overlapping the film thicknesses formed by about half of the substrate in phase movement and high motion, a uniform film thickness can be formed on the entire surface of the substrate 2. At this time, by maintaining the scanning speed constant, high film thickness uniformity can be obtained. The board | substrate 2 which finished film-forming falls horizontally, and is carried out through the board | substrate sending / receiving part 4.

Further, the three-stage line-shaped evaporation source arranged along the film forming direction is an evaporation source 3-A for storing the first material A in order from the top, and an evaporation source 3- for storing the second material B. B) and an evaporation source (3-A) for storing the first material (A). It is arrange | positioned symmetrically with respect to the film-forming direction. Therefore, in the path for depositing about half of the substrate 2 and the path for depositing the other half of the substrate 2, a co-deposition film having a uniform composition is formed on the entire substrate 2 without changing the order of material deposition. Can be formed.

In this way, the present embodiment can shorten the horizontal movement distance of the evaporation source group 3 as compared with the first embodiment, so that the tact time can be shortened to improve the productivity.

The above is that the length in the longitudinal direction of the evaporation source group 3 is about one fourth (one third or less, one quarter or more) of the length of the horizontal side of the substrate 2, and the length The case where it was provided in predetermined direction (about 1/2 of the length of the side of the horizontal direction of a board | substrate) was demonstrated. Similarly, the length of the evaporation source group 3 in the longitudinal direction is about one-Nth ((N-1) or less, about one-Nth or more of the length of the side of the substrate 2 in the horizontal direction). ), The present invention can be similarly applied to a case in which the longitudinal direction is provided at a predetermined interval (about 1 / M of the length of the side in the horizontal direction of the substrate 2). Here, 4 or more natural numbers N are multiples of 2 or more natural numbers M, and natural number M is a divisor of natural number N (N / M is a natural number). When the film formation in the vertical direction is repeated, the evaporation source group 3 is moved horizontally by a predetermined pitch (about N / M of the horizontal length of the substrate 2) between the phase movement and the high movement. We make a tabernacle. By repeating a total of M scans (N / M is a natural number) in a round trip, a co-deposition film having a uniform composition can be formed on the entire surface of the substrate 2.

In addition, the evaporation source group 3 is not limited to a three-stage configuration, and similarly to the first embodiment, the evaporation source group 3 is provided with a plurality of openings or a plurality of openings in which the first to M-th materials are deposited on the substrate 2 by moving in the first direction. It is the 1st-Nth evaporation source which has (M is two or more natural water, N is three or more natural water), It is provided symmetrically with respect to the said 1st direction and the 2nd direction (the reverse direction of the said 1st direction), It is characterized by forming a co-deposition film of uniform composition on the entire surface of the substrate 2 by forming a film while moving together.

[Example 3]

<Double alignment vacuum deposition apparatus>

In Example 3, two systems, a right R line and a left L line, are provided in one vacuum chamber, and the first and second substrates are alternately loaded into the vacuum chamber 1 to perform alignment, standing, and film formation. A vacuum deposition apparatus capable of halving the tact time.

7 is a schematic view showing Example 3 of the present invention. In the vacuum vapor deposition apparatus shown in FIG. 7, the board | substrate exchange part 4 for maintaining a vacuum between the vacuum chamber 1 hold | maintained in vacuum and a conveyance chamber (not shown), and two sets of board | substrates 2-A And the evaporation source group 3 in a line shape consisting of the substrate 2-B and three stages. It is preferable that the length of the evaporation source group 3 in the longitudinal direction is longer than the length of the side in the horizontal direction of the substrate 2. The evaporation source group 3 is constituted by a linear evaporation source such as a linear evaporation source or a multi-evaporation source that is an integrated body.

The 1st board | substrate 2 carried in from the board | substrate sending-and-receiving part 4 performs alignment with a board | substrate holder (not shown), and is standing substantially perpendicular with a board | substrate holder (not shown). The evaporation source group 3 forms a film while moving up and down in the vertical direction. While the first substrate 2 is being deposited, the other substrate transfer portion 4 carries out the previously formed substrate 2, and the second substrate 2 is carried in the vacuum chamber 1. Then, the substrate holder is aligned with the substrate holder, and is substantially perpendicular to the substrate holder. When the film formation of the first substrate 2 is finished, the evaporation source group 3 used for the film formation of the first substrate 2 moves horizontally from the first substrate 2 to the second substrate 2 to start film formation. . During the deposition of the second substrate 2, the first substrate 2 which has finished film formation is knocked down horizontally and carried out from the vacuum chamber 1 through the substrate feed-back portion 4.

By repeating the above cycles, it becomes possible to simultaneously progress the alignment and the film formation in one vacuum chamber 1. Tact time can be reduced by half compared to the device that processes alignment and film formation one by one

8 is a schematic diagram illustrating an arrangement and a movement path of an evaporation source in Example 3. FIG. The evaporation source group 3 performs the film formation of the board | substrate 2, moving vertically from the atmospheric position lower than the lower side of the board | substrate 2 in a vertical direction. Then, when the position of the evaporation source group 3 becomes higher than the upper side of the substrate 2, the substrate 2 is moved in the horizontal direction to the adjacent substrate 2, and then the film formation of the substrate 2 is performed while moving in the vertical direction. Do it. Then, when the position of the evaporation source group 3 becomes lower than the lower surface of the substrate 2, the substrate 2 moves in the horizontal direction and returns to the adjacent substrate 2, that is, to the standby position before film formation. It is preferable that the length of the evaporation source group 3 in the longitudinal direction is longer than the length of the side of the substrate 2 in the horizontal direction. Thereby, uniform film thickness can be formed in the whole surface of the board | substrate 2 by a one-way scan. At this time, high film thickness uniformity can be obtained by keeping the scanning speed constant.

At this time, the three-stage line-shaped evaporation source group 3 arranged along the film formation direction stores the evaporation source 3-A and the second material B which store the first material A in order from above. It consists of an evaporation source 3-B and the evaporation source 3-A which stores a 1st material. These are arranged symmetrically with respect to the film-forming direction. Therefore, in the path | route which forms the 1st board | substrate 2, and the path | route which forms the 2nd board | substrate 2, both the 1st board | substrate 2 and the 2nd board | substrate 2 are not changed, without changing the order of material deposition. Co-deposited films of the same composition can be formed. In this case, since both the phase movement and the high movement can be used for film formation, the tact time can be reduced by half compared to the apparatus for co-deposition only in one way.

In the above, the case where the length of the longitudinal direction of the linear evaporation source group 3 is about the length of the side of the horizontal direction of the board | substrate 2 was demonstrated. In addition to this, the present invention can be similarly applied to the case where the length in the longitudinal direction of the linear evaporation source group 3 is about one-Nth of the length of the side in the horizontal direction of the substrate 2.

In the phase movement and the high motion during film formation, it is possible to move in the horizontal direction by about one-Nth of the length in the horizontal direction of the substrate 2, and form the entire substrate 2 by N scans in total. When N, which is two or more natural numbers, is an odd number, the evaporation source group 3 starting from the standby position below the substrate 2 finishes film formation at the standby position above the substrate 2. On the contrary, the evaporation source group 3 starting from the standby position above the substrate 2 finishes film formation at the standby position below the substrate 2. In this way, after finishing the film-forming of the 1st board | substrate 2, it moves to the adjacent board | substrate 2, and starts film-forming of the 2nd board | substrate 2 again. When the film formation of the second substrate 2 is finished, the second substrate 2 again moves to the adjacent 1 'substrate 2. By repeating the above cycles, it becomes possible to simultaneously progress the alignment and the film formation in one vacuum chamber 1. Tact time can be halved compared with the apparatus which processes alignment and film-forming by one sheet. Anyway, even in this case, since the evaporation source group 3 is disposed symmetrically in the film formation direction, the film can be formed without changing the order of material deposition in the phase shift and the high motion. Especially in this case, since the whole surface of the board | substrate 2 can be formed using the evaporation source group 3 which is comparatively small compared with the board | substrate 2 size, it is easy to respond to the board | substrate 2 enlargement.

As described above, two systems of the right R line and the left L line are provided in the vacuum chamber 1, and the other substrate 2 is formed by forming one substrate 2 while the one substrate 2 is aligned. The case where the time is halved has been described. Similarly, the other board | substrate which carried the 2nd board | substrate 2 in the vacuum chamber, and completed vapor deposition in the vacuum chamber 1 incorporating the several board | substrate 2, and depositing the 1st board | substrate 2, The present invention can also be applied when carrying out (2) from the vacuum chamber 1.

Example 4

<Double alignment method, vacuum deposition apparatus for multilayer film formation>

In Example 4, in the vacuum vapor deposition apparatus which employ | adopted the double alignment system of Example 3, it is an example in case of forming into a multilayer. It does not specifically limit co-deposition.

FIG. 9: is a schematic diagram which shows the arrangement | positioning and the movement path 6 of the evaporation source group 3 of the vacuum vapor deposition apparatus in Example 4. FIG.

The evaporation source group 3 performs the film formation of the board | substrate 2, moving vertically from the atmospheric position lower than the lower side of the board | substrate 2 in a vertical direction. At that time, the vapor from the evaporation source 3-A at the lowermost (or uppermost) end of the evaporation source group 3 is shielded with the shutter 7 so as not to reach the substrate 2. And when the position of the evaporation source group 3 becomes higher than the upper side of the board | substrate 2, it turns upside down.

Subsequently, the substrate 2 is formed while moving in the vertical direction. At that time, the vapor from the evaporation source 3-A at the uppermost (or lowermost) end of the evaporation source group 3 is shielded with the shutter 7 so as not to reach the substrate 2. The film formation of the substrate 2 ends when the position of the evaporation source group 3 is lower than the lower surface of the substrate 2.

The evaporation source group 3 is composed of a linear evaporation source such as a linear evaporation source or a multi evaporation source of an integrated body. It is preferable that the length of the evaporation source group 3 in the longitudinal direction is longer than the length of the side of the substrate 2 in the horizontal direction. As a result, a uniform film thickness can be formed on the entire surface of the substrate 2. In addition, high film thickness uniformity can be obtained by keeping the scanning speed constant.

The evaporation source group 3 of three steps of line shape arranged along the film-forming direction is the evaporation source 3-A which stores the 1st material A in order from the top, and the evaporation source which stores the 2nd material B. (3-B) and an evaporation source (3-A) for storing the first material, and are arranged symmetrically with respect to the film formation direction. On the first substrate 2, a thin film is formed in the order of the first material A and the second material B by film formation during phase movement of the evaporation source group 3. Similarly, the thin film is formed in the 2nd board | substrate 2 by the film formation in the high motion of the evaporation source group 3 in order of the 1st material A and the 2nd material B. FIG. As described above, the order of deposition of the vapor deposition material is not changed in the phase movement of forming the first substrate 2 and the high movement of forming the second substrate 2, so that the first substrate 2 and the second substrate are not changed. The same multilayer film can be formed in both (2). In addition, since both phase movement and high copper of an evaporation source group can be used for film-forming, the tact time can be reduced by half compared with the case of performing multilayer film-forming only by one way.

In the above, the case where two-layer film-forming is formed on the board | substrate in one vacuum chamber 1 was described, The same also applies to the case of film-forming two or more layers. In addition, although the case where two board | substrates 2 are formed into a film in one vacuum chamber 1 was demonstrated, the same also applies to the case where two or more board | substrates 2 are formed into a film.

[Example 5]

<Vacuum vapor deposition apparatus which forms a film as evaporation source moves to horizontal direction>

Although the example of the vacuum evaporation apparatus which forms into a film while moving an evaporation source in a vertical direction was demonstrated to Examples 1-4, Example 5 demonstrates the example of the vacuum evaporation apparatus which forms into a film while moving an evaporation source in a horizontal direction. Also in the case of employing the control of this evaporation source, the configuration of FIG. 1 may be used. The description is omitted here for simplicity.

It is a schematic diagram which shows the arrangement | positioning and the movement path of the evaporation source in Example 5. FIG. The evaporation source group 3 forms a film on the substrate 2 while moving in the horizontal direction (left and right directions), and moves rightward (referring to the right direction) and leftward movement (to the left direction). The whole of the board | substrate 2 is scanned by moving about half of the length of the board | substrate 2 in a vertical direction (up-and-down direction) between.

For example, as shown in FIG. 10, the evaporation source group 3 forms about half (upper half) of the board | substrate 2, moving to the right direction from the standby position outside of the left end of the board | substrate 2 (S101). ). When the evaporation source group 3 reaches the outside of the right end of the substrate 2, the substrate 2 moves by about half of the length of the substrate 2 in the vertical direction (up and down direction) (S102). After that. The film is formed on the other half (lower half) of the substrate 2 while moving in the left direction (S103). When the evaporation source group 3 reaches outward from the left end of the substrate 2, the substrate 2 moves upward by about half of the length of the substrate 2 and returns to the standby position before film formation (S104).

As described above, since the evaporation source group 3 is arranged symmetrically in the film formation direction, the film can be formed without changing the order of material deposition in the right and left movements. Moreover, it is also possible to employ | adopt the various structure demonstrated to Examples 1-4 to the vacuum vapor deposition apparatus which forms into a film, moving an evaporation source in a horizontal direction.

[Example 6]

In Examples 1 to 5, as the evaporation source group 3 is shown in Fig. 11 (1), the evaporation source (3-A), the evaporation source (3-B), and the evaporation source (3-A) are configured in three stages. The case was explained. In Example 6, some specific examples are shown regarding the structure of the other evaporation source group 3. Of course, it is possible to take various other forms.

As shown in (2) of FIG. 11, the evaporation source group 3 may be comprised of two evaporation sources (3-A), an evaporation source (3-B), and two evaporation sources (3-A). In this case, the deposition rate of the material A can be increased with increasing number of evaporation sources 3-A. In addition, the evaporation source group 3 may be a structure which becomes an evaporation source A, two evaporation sources 3-B, and an evaporation source 3-A as shown to (3) of FIG. In this case, the deposition rate of the material B can be increased with increasing number of evaporation sources 3-B.

In addition, as shown in FIG. 11 (4) or FIG. 11 (5), the evaporation source group 3 may be comprised by the combination of a linear evaporation source and a multi evaporation source. This makes it possible to cope with the deposition of various materials.

In any case, since the evaporation source group 3 is arranged symmetrically in the film forming direction, it is possible to form a film without changing the film forming order in the film forming direction and the reverse direction as in the first to fifth embodiments. Therefore, the co-deposition film of a uniform composition can be formed in the board | substrate 2 whole.

1 vacuum chamber
2 substrate
3 evaporation source group
3-A, 3-B evaporation source
4 Board exchange part
5 nozzle
6 breadcrumbs
7 shutter

Claims (13)

In the vacuum vapor deposition apparatus which forms a vapor deposition material into a board | substrate,
It has a vaporization source group arrange | positioned so that the plural line-shaped vaporization sources may be symmetric with respect to the film-forming direction,
And the evaporation source group is formed while moving in a first direction with respect to the substrate, and is formed while moving in a second direction opposite to the first direction with respect to the substrate. The method of claim 1,
The evaporation source group includes a first evaporation source for depositing a first material, a second evaporation source for depositing a second material different from the first material, and a third evaporation source for depositing the first material,
And the second evaporation source is provided between the first evaporation source and the third evaporation source. 3. The method of claim 2,
The evaporation source group comprises a first evaporation source, a second evaporation source, and a third evaporation source in a vertical direction,
The first direction is a vacuum deposition apparatus, characterized in that the upward direction or downward direction. The method of claim 3, wherein
And the evaporation source group moves in a left and right direction after moving in the first direction and before moving in the second direction. 3. The method of claim 2,
The evaporation source group is configured by arranging a first evaporation source, a second evaporation source, and a third evaporation source in left and right directions,
And the first direction is a left direction or a right direction. The method of claim 5, wherein
And the evaporation source group moves in a vertical direction after moving in the first direction and before moving in the second direction. The method according to claim 4 or 6,
The evaporation source group is configured to deposit the substrate by repeating the movement in the first, third and second directions. In the vacuum vapor deposition apparatus which forms a vapor deposition material into a some board | substrate,
It has an evaporation source group which arrange | positioned so that a some line-shaped evaporation source may become symmetrical about an up-down direction,
The installation position of the first substrate and the installation position of the second substrate are side by side in the left and right directions,
The evaporation source group is formed while moving in a first direction with respect to the first substrate, and then formed while moving in a second direction opposite to the first direction with respect to the second substrate,
The first direction is a vacuum deposition apparatus, characterized in that the upward direction or downward direction. The method of claim 8,
The evaporation source group includes a first evaporation source for depositing a first material, a second evaporation source for depositing a second material different from the first material, and a third evaporation source for depositing the first material,
And the second evaporation source is provided between the first evaporation source and the third evaporation source. 10. The method according to claim 8 or 9,
During the film formation of the first substrate, the second vapor deposition is aligned with the substrate holder holding the second substrate. 10. The method according to claim 8 or 9,
And the evaporation source group moves in a left and right direction after moving in the first direction and before moving in the second direction. 10. The method according to claim 2 or 9,
The evaporation source group has a shutter which can be opened and closed in an opening for injecting the first material or the second material,
The evaporation source group,
When moving in the first direction, the shutter of the first evaporation source and the shutter of the second evaporation source are opened, the shutter of the third evaporation source is closed,
When moving in the second direction, the shutter of the first evaporation source is closed, and the shutter of the second evaporation source and the shutter of the third evaporation source are opened. 10. The method according to claim 2 or 9,
The said 1st material is a film base material, and said 2nd material is an additive material, The vacuum vapor deposition apparatus characterized by the above-mentioned.

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