TW201404906A - Vacuum evaporation apparatus - Google Patents

Abstract

The invention provides a vacuum evaporation apparatus, in which a plurality of linear evaporating sources are set into multi levels corresponding to a film-forming direction, and evaporation can be done together without changing film making sequence on the way back and forth. The vacuum evaporation apparatus for film-making evaporating materials on a base plate comprises a plurality of evaporating source groups that includes a plurality linear evaporating sources symmetrically arranged relative to the film-making direction. The evaporating source groups moves toward a second direction, namely a direction opposite to the first direction relative to the base plate and makes film to the base plate after moving toward a first direction relative to the base plate and making film to the base plate.

Description

Vacuum evaporation device

The present invention relates to a vacuum evaporation apparatus.

In recent years, organic EL elements have gradually attracted attention as a new industrial field. The organic EL display is expected to be a next-generation display in place of a liquid crystal display, a plasma display, etc., and organic EL illumination is expected to be a next-generation illumination juxtaposed with LED illumination.

The organic EL element is configured by laminating a plurality of layers of a light-emitting layer, a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like composed of an organic compound to form an electrode pair composed of an anode and a cathode. Be held hostage. By applying a voltage to the electrodes, holes are injected from the anode side, and electrons are injected from the cathode side to the light-emitting layer, and then deactivation of excitons (excitons) generated by recombination of the holes and electrons is performed. Glowing.

The organic material forming the light-emitting layer has a polymer material and a low molecular material. Among them, the current mainstream low molecular materials are formed by vacuum evaporation. Vacuum evaporation is also used when forming other layers. In order to improve For the performance, doping, alloying, and the like by co-evaporation are also performed (Patent Document 1).

The evaporation source using vacuum evaporation has a crucible in which a vapor deposition material is sealed, a nozzle that ejects the vapor deposition material, a heater that heats the crucible, and a casing that houses the crucible, the nozzle, the heater, and the like. The vapor deposition material is evaporated or sublimated from the crucible heated by the heater, and the vaporized material that has been vaporized is ejected from the nozzle on the substrate provided in the vacuum chamber to form each layer. In order to produce an organic EL element having a color display, an organic EL material having different light emission is applied to each of the pixels to form a film in a state in which the substrate and the metal cover are aligned.

The organic EL element has a demand for an increase in the size of the display device and the illumination device and an increase in the size of the substrate. The substrate size has been expanded from the current 4.5th generation manufacturing line (glass substrate size: 730mm × 920mm) to the 5.5th generation manufacturing line (substrate size 1300mm × 1500mm) with a substrate size of 2.9 times, and also reached the 8th generation manufacturing line. (Glass substrate size: 2200mm × 2500mm) prospects.

In order to increase the size of the substrate, various types of evaporation sources such as a linear evaporation source and a planar evaporation source are actually used. From the viewpoint of the expandability of the substrate size, a linear evaporation source is preferable to a planar shape. The linear evaporation source is capable of forming an equal film on the substrate by relatively moving along the substrate in a direction perpendicular to the longitudinal direction thereof. The linear evaporation source has the following forms, that is, an integrated linear evaporation source having a plurality of nozzles, a plurality of evaporation source units having a plurality of nozzles, and a plurality of evaporation sources provided in the longitudinal direction. form.

The linear evaporation source is formed such that the dimension in the longitudinal direction is substantially the substrate size, and the film can be formed on the entire surface by one-sided scanning. When the dimension in the longitudinal direction is smaller than the substrate size, it is possible to form a film on the entire substrate by moving the traveling path and the return path at a certain pitch in the longitudinal direction.

[Advanced technical literature] [Patent Literature]

[Patent Document 1] Japanese Patent No. 3744842

In the co-evaporation, a plurality of evaporation sources are disposed in the same vacuum chamber, and different materials are disposed in different evaporation sources. In the case of co-evaporation using a linear evaporation source, for example, a plurality of linear evaporation sources may be arranged in a plurality of stages along the film formation direction. However, in this configuration, when film formation is performed reciprocally, the film formation order of the traveling path and the return path is reversed. Therefore, when film formation is performed on different substrate portions in the traveling path and the return path, there is a problem that the composition ratio in the substrate surface is different. On the other hand, the countermeasure against the present invention is as follows.

In order to solve the aforementioned problems, the features of the present invention are as follows. A vacuum evaporation apparatus for forming a vapor deposition material on a substrate, having a plurality of lines The evaporation source is disposed in a symmetrical evaporation source group in the film formation direction, and the evaporation source group forms a film on the substrate while moving in the first direction, and then faces the substrate in the opposite direction to the first direction. Film formation is carried out while moving in the direction.

In the vacuum vapor deposition apparatus of the present invention, a plurality of linear evaporation sources prepared in accordance with the type of the vapor deposition material are disposed so as to be symmetric with respect to the film formation direction (and the opposite direction), and need not be changed on the traveling path and the return path. The film is sequentially formed to form a co-evaporated film. Therefore, since the film is reciprocated in the first direction and moved in the second direction substantially orthogonal to the traveling path and the return path along the substrate surface, the traveling path and the return path are formed at different substrate positions. In the case of a film, since the composition ratio can be made uniform, a co-deposited film having a uniform film thickness and composition can be formed on a larger substrate.

1‧‧‧vacuum room

2‧‧‧Substrate

3‧‧‧Evaporation source group

3-A, 3-B‧‧‧ evaporation source

4‧‧‧Substrate Receiving Department

5‧‧‧ nozzle

6‧‧‧Moving path

7‧‧ ‧ blocking

Fig. 1 is a view showing the structure of a vacuum chamber of the vacuum vapor deposition apparatus of the first embodiment.

2 is a schematic view showing the arrangement and movement path of the evaporation source of Embodiment 1.

Fig. 3 is a schematic view <2> showing the arrangement and moving path of the evaporation source of the first embodiment.

Fig. 4 is a view showing the arrangement and movement path of the evaporation source of the first embodiment <3>.

Fig. 5 is a view showing the arrangement and movement path of the evaporation source of the first embodiment <4>.

Fig. 6 is a view showing the arrangement and movement path of the evaporation source of the second embodiment.

Fig. 7 is a view showing the structure of a vacuum chamber of the vacuum vapor deposition apparatus of the third embodiment.

Fig. 8 is a view showing the arrangement and movement path of the evaporation source of the third embodiment.

Fig. 9 is a view showing the arrangement and movement path of the evaporation source of the fourth embodiment.

Fig. 10 is a view showing the arrangement and movement path of the evaporation source of the fifth embodiment.

11(1) to (5) are schematic views showing the arrangement of the evaporation source of Example 6.

Hereinafter, an embodiment of the present invention will be described using a drawing or the like. In the following, an example of the vacuum vapor deposition apparatus of the present invention will be described as an example of the production of the organic EL device. The following description shows specific examples of the present invention, but the present invention is not limited to the description, and various modifications and changes can be made within the scope of the technical scope of the invention. For example, the vapor deposition material is not limited to an organic material, and various other materials such as a metal material or an inorganic material may be used. Co-evaporation can also be applied to various cases such as doping and alloy formation.

[Example 1] <Vacuum evaporation apparatus having one evaporation source group>

Fig. 1 is a schematic view showing the structure of a part (vacuum chamber) of the vacuum evaporation apparatus of Example 1. In the vacuum chamber 1 that is maintained in a vacuum, a substrate 2 that is vertically erected and a linear evaporation source group 3 composed of three stages are disposed. The substrate 2 carried in the substrate receiving portion 4 provided to maintain the vacuum between the transfer chamber (not shown) is aligned with the substrate holder (not shown), and the substrate 2 is slightly perpendicular to the substrate holder. Erected. In the present embodiment, an example of a substrate holder which doubles as a metal cover for each chamfer size pattern on a lattice is shown. Further, in the embodiment shown in Fig. 1, the vertical direction is taken as the film formation direction, and the horizontal direction is taken as the longitudinal direction of the linear evaporation source group 3. If there is no need, the direction and the opposite direction are not particularly distinguished.

The linear evaporation source group 3 is composed of an evaporation source 3-A that accommodates the first material in the film formation direction, an evaporation source 3-B that houses the second material B, and an evaporation source 3-A that houses the first material. The three segments are composed. Here, the second material is a material different from the first material. The evaporation source 3-A and the evaporation source 3-B use, for example, a linear evaporation source, a majority evaporation source, or the like. The linear evaporation source feature has a length direction which is approximately half the length of the side of the substrate 2 in the horizontal direction. It is desirable that the length of the side in the horizontal direction of the substrate 2 is shorter and longer than half of the length.

2 is a schematic view showing the arrangement and movement path of the evaporation source of Embodiment 1. FIG. 2 is a view of the substrate 2 viewed from the substrate receiving portion 4. Furthermore, FIG. 3, FIG. 4, FIG. 5, FIG. 6, FIG. 8, FIG. Similarly, in FIG. 10, the substrate 2 is viewed from the substrate receiving unit 4. The evaporation source group 3 forms a film on the substrate 2 while moving up and down in the vertical direction, and moves in the horizontal direction between the upper movement (meaning moving upward) and the lower movement (meaning moving downward). A half of the length of 2 is used to thereby scan the entire substrate 2.

For example, as shown in FIG. 2, the evaporation source group 3 performs film formation in a half (left half) of the substrate 2 while moving upward in the vertical direction from a lower standby position than the lower side of the substrate 2 (S21). When the position of the evaporation source group 3 becomes higher than the upper side of the substrate 2, the movement in the right direction in the horizontal direction (left-right direction) corresponds to a slight half of the length of the substrate 2 (S22). Then, film formation (S23) of the remaining half (right half) of the substrate 2 is performed while moving in the vertical direction. When the position of the evaporation source group 3 becomes lower than the lower side of the substrate 2, the movement in the left direction in the horizontal direction (left-right direction) corresponds to a half distance of the length of the substrate 2, and returns to the standby position before the film formation of the substrate 2 (S24) ).

Fig. 3 is a schematic view <2> showing the arrangement and moving path of the evaporation source of the first embodiment. The movement path 6 of the evaporation source group 3 is not limited to the above embodiment. For example, the odd-numbered substrate 2 can be processed by the moving path 6 as shown in FIG. 3, and the even-numbered substrate 2 can be processed in the opposite moving path 6.

Fig. 4 is a view showing the arrangement and movement path of the evaporation source of the first embodiment <3>. Similarly to FIG. 3, the odd-numbered substrate 2 can be processed by the path shown in FIG. 4, and the even-numbered substrate 2 can be processed in the opposite path. As shown in Figure 3 or Figure 4, by moving up and down By overlapping the film thickness of a half of each of the film formation substrates, it is possible to form an equal film on the entire surface of the substrate 2. At this time, by keeping the scanning speed constant, a high film thickness uniformity can be obtained.

Since the linear evaporation source group 3 is configured such that the evaporation source 3-A and the evaporation source 3-B evaporation source 3-A are symmetrically arranged in the film formation direction, a slight half of the substrate 2 is formed on the film. The movement and the downward movement of the remaining half of the substrate 2 are performed, and the film formation can be performed without changing the film formation order of the material. Therefore, a co-deposited film of uniform composition can be formed over the entire substrate 2.

According to the above aspect, it is possible to form a film of the co-deposited film having the same film thickness and composition in the entire surface of the substrate 2. The substrate 2 after the film formation is completed is tilted horizontally and carried out through the substrate receiving portion 4.

Since the evaporation source group 3 can be used smaller than the substrate 2, it is easy to increase the size of the substrate 2. Moreover, since both the upper movement and the downward movement can be utilized for film formation, the production time can be halved compared to the apparatus which performs co-evaporation only in a single unit.

As a specific example of the first material and the second material, an example in which the first material is used as the film base material and the second material is used as the additive material can be considered. When the amount of the first material formed by the evaporation source 3-A and the second material formed by the evaporation source 3-B are the same, since one evaporation source group has two evaporation sources 3-A, The amount of the first material is twice the amount of the second material in the amount of film formation from one evaporation source group. With this structure, a larger amount of the first material is required as the film base material.

Furthermore, the size of the opening is changed, etc., so that it is compared with When the first material formed by the evaporation source 3-A and the second material formed by the evaporation source 3-B are extremely large, the first material may be used as an additive material, and the second material may be used as a film mother. material.

The present invention has been described so far in the case where the types of vapor deposition materials are A and B. The structure of the evaporation source group 3 may be an evaporation source 3-A, an evaporation source 3-B, an evaporation source 3-B, an evaporation source 3-A, or an evaporation source 3-A, and an evaporation source 3-B in addition to the above structure. The structure of the evaporation source 3-B, the evaporation source 3-B, and the evaporation source 3-A. In this case, the vapor deposition rate can be increased by an increase in the number of the evaporation source groups. In addition, even when the type of the vapor deposition material is three or more, the structure of the evaporation source group 3 and the film formation method may be based on the above. For example, when the type of the vapor deposition material is three types of the first material A, the second material B, and the third material C, the evaporation source group 3 has the evaporation source 3-A and the evaporation source 3-B evaporation source 3 The order of -C (not shown), the evaporation source 3-B, and the evaporation source 3-A may be arranged in a five-stage configuration in the film formation direction.

When expressed in a general manner, it is an evaporation source in which an evaporation source group moves in the first direction and vapor-deposits a material of M type (first material to M material: M is a natural number of 2 or more) on the substrate. Group (first evaporation source to N-th evaporation source: N is a natural number of 3 or more), and is characterized in that film formation is performed while moving in the first direction and the second direction (the first direction is opposite) The film formation of the co-deposited film of the uniform composition of the entire substrate 2 is performed. The specific examples described above correspond to the case where M=2 and N=3.

The length direction of the evaporation source group 3 has been described so far. The length is approximately half of the length of the side of the substrate 2 in the horizontal direction. When it is expressed in a general manner, the length of the evaporation source group 3 in the longitudinal direction is substantially one-K of the length of the side of the substrate 2 in the horizontal direction (K is a natural number of 2 or more), and the present invention also The same applies. By moving the traveling path and the return path in the film formation, the distance corresponding to the length of the substrate 2 in the horizontal direction by a fraction of K is shifted in the horizontal direction, and scanning for a total of K times can be performed uniformly on the entire substrate 2 . Film formation of a film thickness and composition of a co-evaporated film. When the natural number K of 2 or more is an odd number, the evaporation source group 3 from the standby position on the lower side of the substrate 2 is formed at the standby position on the upper side of the substrate 2 to form a film. On the contrary, the evaporation source group 3 starting from the standby position on the upper side of the substrate 2 is finished at the standby position on the lower side of the substrate 2 to form a film.

In any case, since the evaporation source group 3 is symmetrically arranged in the film formation direction, it is possible to move up and down, and it is possible to form a film without changing the film formation order of the material. In particular, since the entire surface of the substrate 2 is formed by using the evaporation source group 3 which is smaller than the size of the substrate 2, there is an advantage in that the substrate 2 is increased in size.

Fig. 5 is a view showing the arrangement and movement path of the evaporation source in the case of L = 4 in the first embodiment. In this case, the evaporation source group 3 forms the substrate 2 while moving in the upward direction, the right direction, the lower direction, the right direction, the upper direction, the right direction, and the lower direction.

In FIGS. 1 to 5, the evaporation source group 3 is composed of a linear evaporation source of a unitary body, a linear evaporation source such as a multi-type evaporation source, and the like. Each evaporation source is a nozzle that is filled with a material chamber of a vapor deposition material and a vapor injection port. a crucible, a heater that heats the crucible from the periphery, a heat shield that is provided on the outer peripheral surface of the heater to enhance the heat retention of the crucible, and is used to prevent heat radiation from the heater. A cooling door that leaks to the outside (water-cooled water flows around) and a door (not shown) that opens and closes the nozzle (nozzle). Further, the evaporation source may have a plate (angle control plate) that controls the radiation angle of the vapor ejected from the nozzle. The angle control panel can be installed at any part of the evaporation source.

In addition, in FIG. 1 to FIG. 4, the evaporation source group 3 is formed while moving in the upward direction, and the film formation is performed while moving in the downward direction. In this case, it is possible to efficiently form the entire substrate 2 in a short time. In addition, [1] the evaporation source group 3 is formed while being moved in the upward direction, and does not move in the horizontal direction, and moves in the downward direction on the same region of the substrate 2. Controlling the film formation; [2] The evaporation source group 3 is formed while moving in the upward direction, and is formed in the same region of the substrate 2 while moving in the downward direction, and then moved in the horizontal direction, and then to the other. In the region, the evaporation source group 3 is controlled to move in the horizontal direction while moving in the upward direction. By the same, the same region of the substrate 2 can be formed twice in the upper and lower sides as needed. An important feature of the present invention is that film formation can be performed without changing the film formation order of the material even if the direction of movement of the evaporation source group 3 is different.

Further, as an example of the horizontal direction, the movement is mainly performed in the right direction, but the evaporation source group 3 is also movable in the left direction.

Moreover, the film formation was performed by erecting the substrate 2 as an example. However, it is also possible to form a film in a state where the substrate 2 is lying down. At this time, each figure can be regarded as a figure viewed from the upper direction.

[Embodiment 2] <Vacuum evaporation apparatus with two evaporation source groups>

Fig. 6 is a view showing the arrangement of the evaporation source group 3 and the movement path 6 of the vacuum vapor deposition apparatus of the second embodiment. The length of the evaporation source group 3 in the longitudinal direction is slightly more than one-fourth (one-third or one-third, one-fourth or one-fourth or more) of the horizontal distance of the substrate 2. The evaporation source group 3 is disposed to be supported in the film formation direction, and is disposed in the longitudinal direction at a predetermined interval (a little one-half of the length of the side in the horizontal direction of the substrate). Each of the evaporation sources may have a holding and moving mechanism individually, or the evaporation source group 3 may be controlled by one holding and moving mechanism.

The evaporation source group 3 forms a film while moving vertically in the vertical direction, and moves the pitch of the substrate 2 in the horizontal direction between the upper movement and the lower movement by a factor of a third (one third or less). In one-fourth or more than one-fourth of the total, the entire substrate 2 can be formed into a film by scanning twice in total. For example, as shown in FIG. 6, the evaporation source group 3 performs film formation of a half of the substrate 2 while moving upward in the vertical direction from a lower standby position than the lower side of the substrate 2. When the position of the evaporation source group 3 becomes higher than the upper side of the substrate 2, the movement in the horizontal direction corresponds to a slight one-fourth of the length of the substrate 2 in the horizontal direction (one-third or one-third or less, 4 One or more than one-fourth), then, one side toward the vertical A slight half of the film formation of the substrate 2 is performed while moving downward. When the position of the evaporation source group 3 becomes lower than the lower surface of the substrate 2, the movement in the horizontal direction corresponds to a slight one-fourth of the length of the substrate 2 in the horizontal direction (one-third or one-third or less, 4 points) One or more than one fourth) is returned to the standby position before the substrate 2 is formed.

Alternatively, the odd-numbered substrate 2 may be processed by a moving path 6 similar to that shown in FIG. 3, and the even-numbered substrate 2 may be processed in the opposite path. Similarly, the substrate 2 of the odd-numbered sheets can be processed by a path similar to that shown in Fig. 4, and the substrate 2 of the even-numbered sheets can be processed in the opposite path. By overlapping the film thickness of a half of each of the substrates formed by moving up and down, a uniform film thickness can be formed over the entire surface of the substrate 2. Moreover, at this time, by keeping the scanning speed constant, it is possible to expand the film thickness uniformity of the height. The substrate 2 after the film formation is completed is tilted horizontally and carried out through the substrate receiving portion 4.

In addition, the evaporation source arranged in a line shape in three stages along the film formation direction is an evaporation source 3-A in which the first material A is accommodated, and an evaporation source 3-B in which the second material B is housed. The evaporation source 3-A of the first material A is composed. The film formation direction is arranged symmetrically. Therefore, in a path in which a half of the substrate 2 is formed and a path in which the remaining half of the substrate 2 is formed, it is possible to form a co-deposited film of uniform composition in the entire substrate 2 without changing the film formation order of the material.

As described above, in the present embodiment, since the horizontal moving distance of the evaporation source group 3 can be shortened, the production time can be further shortened and the productivity can be improved.

As described above, the length in the longitudinal direction of the evaporation source group 3 is slightly one-fourth (one-third or one-third or less, one-fourth or one-fourth or more) of the length of the side in the horizontal direction of the substrate 2. And a case where it is provided in the longitudinal direction at a predetermined interval (a little one-third of the length of the side in the horizontal direction of the substrate). Similarly, the length in the longitudinal direction of the evaporation source group 3 is a fraction of the length of the side of the substrate 2 in the horizontal direction (one of (N-1) or less than (N-1), N minutes. The present invention is also applicable to a case where one or more of N or more and a predetermined interval (a slight one-minute of the length of the side of the substrate 2 in the horizontal direction) is provided in the longitudinal direction. Here, the natural number N of 4 or more is a multiple of 2 or more natural numbers M, and the natural number M is a divisor of the natural number N (N/M is a natural number). When the film formation in the vertical direction is repeated, the evaporation source group 3 is moved in the horizontal direction by a predetermined pitch (a slight N/M of the length of the substrate 2 in the horizontal direction) between the upper movement and the lower movement. Film formation. By performing a scan of a total of M times (N/M is a natural number) by reciprocating, it is possible to form a co-deposited film of uniform composition over the entire surface of the substrate 2.

Further, the evaporation source group 3 is not limited to the three-stage structure, and may move in the first direction as in the first embodiment, and may deposit a plurality of first to N-th evaporation sources of the first to M-th materials on the substrate 2 Or a first to N-th evaporation source having a plurality of openings (M is a natural number of 2 or more, N is a natural number of 3 or more), and is characterized by the first direction and the second direction (the aforementioned The first direction is opposite to the other direction, and the film is formed while moving, and the film is formed on the entire surface of the substrate 2 by a co-deposited film having an equal composition.

[Example 3] <Double Alignment Vacuum Evaporation Device>

In the third embodiment, two systems of the right R line and the left L line are provided in one vacuum chamber, and the first substrate and the second substrate are carried into the vacuum chamber 1 alternately, and alignment, standing, and film formation are performed. A vacuum evaporation device that can reduce the production time by half.

Fig. 7 is a schematic view showing a third embodiment of the present invention. The vacuum vapor deposition apparatus shown in FIG. 7 is a vacuum chamber 1 that maintains a vacuum, a substrate receiving unit 4 that maintains a vacuum between a transfer chamber (not shown), two sets of substrates 2-A, and a substrate 2 -B and a linear evaporation source group 3 formed in three stages. The length of the evaporation source group 3 in the longitudinal direction is preferably longer than the length of the side of the substrate 2 in the horizontal direction. The evaporation source group 3 is composed of a linear evaporation source of a monolith or a linear evaporation source such as a multi-type evaporation source.

The first substrate 2 carried in from the substrate receiving portion 4 is aligned with a substrate holder (not shown), and is vertically erected together with the substrate holder (not shown). The evaporation source group 3 is formed by moving up and down in the vertical direction. While the first substrate 2 is being vapor-deposited, the substrate 2 that has been previously formed is carried out in the other substrate receiving portion 4, and the second substrate 2 is again carried into the vacuum chamber 1 to be aligned with the substrate holder, and then The substrate holders are erected vertically. When the film formation of the first substrate 2 is completed, the evaporation source group 3 for film formation of the first substrate 2 is moved in the horizontal direction from the first substrate 2 toward the second substrate 2, and film formation is started. When the second substrate 2 is vapor-deposited, the process ends. The film-formed first substrate 2 is tilted horizontally and is carried out from the inside of the vacuum chamber 1 via the substrate receiving unit 4.

By repeating the above cycle, alignment and film formation can be simultaneously performed in one vacuum chamber 1. The production time can be halved compared to the alignment and film formation of each piece.

Fig. 8 is a view showing the arrangement and movement path of the evaporation source of the third embodiment. The evaporation source group 3 performs film formation of the substrate 2 while moving upward in the vertical direction from a lower standby position than the lower side of the substrate 2. When the position of the evaporation source group 3 is higher than the upper side of the substrate 2, the substrate 2 is moved in the horizontal direction, and then the substrate 2 is formed while moving downward in the vertical direction. Moreover, when the position of the evaporation source group 3 becomes lower than the lower surface of the substrate 2, it moves in the horizontal direction and returns to the adjacent substrate 2, that is, returns to the standby position before film formation. The length of the evaporation source group 3 in the longitudinal direction is preferably longer than the length of the side of the substrate 2 in the horizontal direction. Thereby, it is possible to form an equal film thickness over the entire surface of the substrate 2 by one-side scanning. Moreover, at this time, by keeping the scanning speed constant, it is possible to expand the film thickness uniformity of the height.

In this case, the evaporation source group 3 which is arranged in three stages along the film formation direction is an evaporation source 3-A for accommodating the first material A and an evaporation source 3 for accommodating the second material B from the top. B. The evaporation source 3-A of the first material is housed. These evaporation sources are arranged symmetrically in the film formation direction. Therefore, in the path in which the first substrate 2 is formed and the path in which the second substrate 2 is formed, it is possible to form the same composition in both the first substrate 2 and the second substrate 2 without changing the film formation order of the material. A total of vapor deposited film. In this situation In addition, since both the upper movement and the lower movement can be utilized for film formation, the production time can be halved compared to a device that performs co-evaporation only in a single unit.

As described above, the length in the longitudinal direction of the evaporation source group 3 is roughly the length of the side of the substrate 2 in the horizontal direction. Further, the present invention is also applicable to the case where the length in the longitudinal direction of the linear evaporation source group 3 is a fraction of the length of the side of the substrate 2 in the horizontal direction.

By moving up and down in the film formation, it is possible to move the distance corresponding to the length of the substrate 2 in the horizontal direction by a factor of N in the horizontal direction, and the scanning of the total of N times enables the entire substrate 2 to be formed. membrane. When N of 2 or more natural numbers is an odd number, the evaporation source group 3 starting from the standby position on the lower side of the substrate 2 is finished at the standby position on the upper side of the substrate 2 to form a film. On the contrary, the evaporation source group 3 starting from the standby position on the upper side of the substrate 2 is finished at the standby position on the lower side of the substrate 2 to form a film. After the film formation of the first substrate 2 is completed, the substrate 2 is moved to the adjacent substrate 2 to start the film formation of the second substrate 2 again. When the film formation of the second substrate 2 is completed, the film moves to the first 'substrate 2 again. By repeating the above cycle, alignment and film formation can be simultaneously performed in one vacuum chamber 1. The production time can be halved compared to the alignment and film formation of each piece. In any case, in this case as well, since the evaporation source group 3 is symmetrically arranged in the film formation direction, it is possible to move up and down, and it is possible to form a film without changing the film formation order of the material. In particular, in this case, since the entire surface of the substrate 2 is formed by using the evaporation source group 3 which is smaller than the size of the substrate 2, it is easier to increase the size of the substrate 2.

Above, it is explained that the right R line is set in the vacuum chamber 1. In the two systems of the left L line, while the one substrate 2 is being aligned, the other substrate 2 is formed into a film, thereby reducing the production time by half. In the same manner, in the case where the plurality of substrates 2 are mounted in the vacuum chamber 1, while the substrate 2 of the first sheet is vapor-deposited, the second substrate 2 is carried into the vacuum chamber 1, and vapor deposition is performed again. The present invention is also applicable to the case where the other substrate 2 after the completion of the substrate 2 is carried out from the vacuum chamber 1.

[Example 4] <Double Alignment and Multilayer Film Forming Vacuum Evaporation Device>

In the fourth embodiment, an example in which a multilayer film formation is performed in the vacuum vapor deposition apparatus in the double alignment direction of the third embodiment is employed. In particular, co-evaporation is not limited.

Fig. 9 is a view showing the arrangement of the evaporation source group 3 and the movement path 6 of the vacuum vapor deposition apparatus of the fourth embodiment.

The evaporation source group 3 performs film formation of the substrate 2 while moving upward in the vertical direction from a lower standby position than the lower side of the substrate 2. At this time, the vapor ejected from the evaporation source 3-A located in the lowermost stage (or the uppermost stage) in the evaporation source group 3 is shielded by the shutter 7 so as not to reach the substrate 2. Moreover, when the position of the evaporation source group 3 becomes higher than the upper side of the substrate 2, it is folded back.

Next, film formation of the substrate 2 is performed while moving downward in the vertical direction. At this time, the vapor ejected from the evaporation source 3-A located at the uppermost stage (or the lowermost stage) in the evaporation source group 3 is shielded by the shutter 7 so as not to reach the substrate 2. When the position of the evaporation source group 3 becomes lower than the lower surface of the substrate 2 At the time, the film formation of the substrate 2 is completed.

The evaporation source group 3 is composed of a linear evaporation source of a monolith or a linear evaporation source such as a multi-type evaporation source. The length of the evaporation source group 3 in the longitudinal direction is preferably longer than the length of the side of the substrate 2 in the horizontal direction. Thereby, it is possible to form an equal film thickness over the entire surface of the substrate 2. Further, at this time, by keeping the scanning speed constant, it is possible to obtain a high film thickness uniformity.

The evaporation source group 3 arranged in a line shape along the film formation direction is an evaporation source 3-A for accommodating the first material A and an evaporation source 3-B for accommodating the second material B, and is housed. The evaporation source 3-A of the first material is configured to be symmetrically arranged in the film formation direction. On the first substrate 2, a film is formed in the order of the first material A and the second material B by film formation in the upper movement of the evaporation source group 3. Similarly, in the second substrate 2, a film is formed in the order of the first material A and the second material B by film formation in the downward movement of the evaporation source group 3. In this manner, since the first substrate 2 is moved upward and the second substrate 2 is formed into a film, the film formation order of the vapor deposition material does not need to be changed. Therefore, the first substrate 2 and the second substrate can be formed. Both of the substrates 2 can form the same multilayer film. Moreover, since both the upward movement and the downward movement of the evaporation source group can be utilized for film formation, the production time can be halved compared to the case where the multilayer formation is performed only in a single layer.

In the above, the case where two layers of the film are formed on the substrate in one vacuum chamber 1 has been described, but the same applies to the case where two or more layers are formed. Further, the case where the film formation is performed on the two substrates 2 in one vacuum chamber 1 has been described. However, the same applies to the case of forming two or more substrates 2 .

[Example 5] <Vacuum vapor deposition apparatus for film formation while moving the evaporation source in the horizontal direction>

In the first to fourth embodiments, the vacuum vapor deposition apparatus that performs film formation while moving the evaporation source in the horizontal direction has been described as an example. However, in the fifth embodiment, the vacuum is formed while moving the evaporation source in the horizontal direction. The vapor deposition device will be described as an example. For the control using this evaporation source, the structure shown in Fig. 1 can be used. Here, for simplification, the description thereof will be omitted.

Fig. 10 is a view showing the arrangement and movement path of the evaporation source of the fifth embodiment. The evaporation source group 3 forms a film on the substrate 2 while moving in the horizontal direction (left-right direction), and is perpendicular to the right movement (meaning movement in the right direction) and the left movement (in the movement in the left direction). The direction shift corresponds to a distance of a half of the length of the substrate 2, whereby the entire substrate 2 is scanned.

For example, as shown in FIG. 10, the evaporation source group 3 performs film formation of a half (upper half) of the substrate 2 while moving in the right direction from the standby position on the outer side of the left end of the substrate 2 (S101). Then, when the evaporation source group 3 reaches the outer side of the right end of the substrate 2, a distance corresponding to substantially half of the length of the substrate 2 is moved downward in the vertical direction (up and down direction) (S102). Then, the film formation of the remaining half (lower half) of the substrate 2 is performed while moving in the left direction (S103). Then, when the evaporation source group 3 reaches the outer side of the left end of the substrate 2, the upward movement is equivalent to The distance of approximately half of the length of the substrate 2 is returned to the standby position before film formation (S104).

As described above, since the evaporation source group 3 is symmetrically arranged in the film formation direction, it is possible to move right and left, and it is possible to form a film without changing the film formation order of the material. Further, the various configurations described in the first to fourth embodiments may be employed in a vacuum vapor deposition apparatus which performs film formation while moving in the horizontal direction while the evaporation source.

[Embodiment 6]

In the first to fifth embodiments, the evaporation source group 3 is a case in which the three-stage structure of the evaporation source 3-A, the evaporation source 3-B, and the evaporation source 3-A is illustrated as shown in Fig. 11 (1). In Embodiment 6, the structure of the evaporation source group 3 is aligned, and several specific examples are shown. Of course, various forms other than these forms can also be used.

The evaporation source group 3 may have a structure of two evaporation sources 3-A, an evaporation source 3-B, and two evaporation sources 3-A as shown in Fig. 11 (2). In this case, the vapor deposition rate of the material A can be increased as the number of the evaporation source 3-A increases. Further, as shown in Fig. 11 (3), the evaporation source group 3 may be configured by an evaporation source A, two evaporation sources 3-B, and an evaporation source 3-A. In this case, the vapor deposition rate of the material B can be increased as the number of evaporation sources 3-B increases.

Further, the evaporation source group 3 may be composed of a combination of a linear evaporation source and a majority evaporation source as shown in Fig. 11 (4) or Fig. 11 (5). Thereby, it is possible to form a film for various materials.

In any case, since the evaporation source group 3 is symmetrically arranged on the film formation side Therefore, in the same manner as in the first to fifth embodiments, the film formation can be performed without changing the film formation order of the material by the movement in the film formation direction and the opposite direction. Therefore, the entire substrate 2 can be formed. A co-evaporated film of equal composition.

1‧‧‧vacuum room

2‧‧‧Substrate

3‧‧‧Evaporation source group

3-A, 3-B‧‧‧ evaporation source

4‧‧‧Substrate Receiving Department

6‧‧‧Moving path

Claims (13)

A vacuum vapor deposition apparatus is a vacuum vapor deposition apparatus that forms a vapor deposition material on a substrate, and has a plurality of linear evaporation sources arranged in an evaporation source group symmetrical with respect to a film formation direction, and the evaporation The source group is formed by filming the substrate while moving in the first direction, and then forming the film while moving in the second direction opposite to the first direction. The vacuum evaporation apparatus according to claim 1, wherein the evaporation source group is a first evaporation source that vapor-deposits the first material, and a second evaporation source that vapor-deposits the second material different from the first material, And a third evaporation source that vapor-deposits the first material, wherein the second evaporation source is provided between the first evaporation source and the third evaporation source. The vacuum vapor deposition apparatus according to claim 2, wherein the evaporation source group is configured by arranging the first evaporation source, the second evaporation source, and the third evaporation source in the vertical direction, and the first direction is upward or Down direction. The vacuum vapor deposition apparatus of claim 3, wherein the evaporation source group moves in the first direction and then moves in the left-right direction before moving in the second direction. The vacuum vapor deposition device according to the second aspect of the invention, wherein the evaporation source group is configured by arranging a first evaporation source, a second evaporation source, and a third evaporation source in a horizontal direction. The first direction is the left direction or the right direction. The vacuum vapor deposition device according to claim 5, wherein the evaporation source group moves in the first direction and then moves up and down before moving in the second direction. The vacuum vapor deposition apparatus of the fourth or sixth aspect of the invention, wherein the evaporation source group repeats movement in the first direction, the third direction, and the second direction to form the substrate. A vacuum vapor deposition apparatus is a vacuum vapor deposition apparatus that forms a vapor deposition material on a plurality of substrates, and has a plurality of linear evaporation sources arranged in an evaporation source group that is symmetrical with respect to the vertical direction. The installation position of the substrate and the installation position of the second substrate are arranged in the left-right direction, and the evaporation source group is formed by moving the first substrate while moving in the first direction, and then facing the second substrate The film formation is performed while moving in the second direction opposite to the direction of the first direction, and the first direction is the upward direction or the downward direction. The vacuum evaporation apparatus according to claim 8, wherein the evaporation source group is a first evaporation source that vapor-deposits the first material, and a second evaporation source that vapor-deposits the second material different from the first material, And a third evaporation source that vapor-deposits the first material, wherein the second evaporation source is provided between the first evaporation source and the third evaporation source. The vacuum vapor deposition apparatus of claim 8 or 9, wherein the first substrate is formed into a film, and the second substrate is aligned with the substrate holder for holding the second substrate. The vacuum vapor deposition apparatus according to claim 8 or 9, wherein the evaporation source group moves in the first direction and then moves in the left-right direction before moving in the second direction. The vacuum vapor deposition device according to any one of claims 1 to 9, wherein the evaporation source group has a shutter that can open and close an opening for emitting the first material or the second material, and the The evaporation source group opens the door of the first evaporation source and the door of the second evaporation source when the first source is moved in the first direction, and closes the door of the third evaporation source to the second When the direction is moved, the shutter of the first evaporation source is closed, and the shutter of the second evaporation source and the shutter of the third evaporation source are opened. The vacuum vapor deposition device according to any one of claims 1 to 9, wherein the first material is a film base material, and the second material is an additive material.