JP2012052187A - Vapor deposition apparatus, film deposition method, and method for manufacturing organic el device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus which is a vacuum vapor deposition apparatus suitable for manufacturing an organic EL device and deposits a film comprising a plurality of layers by a single apparatus.SOLUTION: The vacuum vapor deposition apparatus (vapor deposition apparatus) 1 has a vacuum chamber 2 in which a substrate holding wall 3, four evaporation devices 5a, 5b, 5c and 5d, a vapor chamber 6, and four crucible installation chambers (evaporation device installation sections) 12a, 12b, 12c and 12d are incorporated. Installation chamber-side electric heaters (means for keeping generation sections warm) 18 are attached to the outer peripheral surface of respective crucible installation chambers 12. Installation chamber-side temperature sensors 28 are provided to respective crucible installation chambers 12. The crucible installation chambers 12a, 12b, 12c and 12d are each kept at a temperature suitable for a thin film material of each layer. A vapor passage section 13 is kept at a target temperature which is not lower than the highest target temperature in the target temperatures of the means for keeping the generation sections warm.

Description

The present invention relates to a vapor deposition apparatus. The present invention is particularly suitable as a vapor deposition device used for manufacturing an organic EL (Electro Luminescence) device.
The present invention also relates to a film forming method and an organic EL device manufacturing method.

  In recent years, an organic EL device has attracted attention as a lighting device that replaces an incandescent lamp and a fluorescent lamp, and many studies have been made. In addition, an organic EL method is attracting attention as a method for changing to a liquid crystal method or a plasma method in a display member typified by a television.

Here, the organic EL device is obtained by laminating an organic EL element on a base material such as a glass substrate or a transparent resin film.
In addition, the organic EL element has two or more light-transmitting electrodes facing each other, and a light emitting layer made of an organic compound is laminated between the electrodes. The organic EL element emits light by the energy of recombination of electrically excited electrons and holes.
Since the organic EL device is a self-luminous device, a high-contrast image can be obtained when used as a display material. In addition, light of various wavelengths can be emitted by appropriately selecting the material of the light emitting layer. In addition, the thickness is extremely thin compared to incandescent lamps and fluorescent lamps, and light is emitted in a planar shape, so there are few restrictions on the installation location.

A typical layer structure of the organic EL device is as shown in FIG. An organic EL device 200 shown in FIG. 19 has a configuration called a bottom emission type. A transparent electrode layer 202, a functional layer 203, and a back electrode layer 205 are laminated on a glass substrate 201, and these are sealed. The portion 206 is sealed.
The functional layer 203 is formed by stacking a plurality of thin films of organic compounds. A typical functional layer 203 has a layer structure as shown in FIG. 20, which includes a hole injection layer 210, a hole transport layer 211, a light emitting layer 212, and an electron transport layer 213.

The organic EL device 200 is manufactured by sequentially forming the above-described layers on a glass substrate 201.
Of the above-described layers, the transparent electrode layer 202 is a transparent conductive film layer such as indium tin oxide (ITO), and is formed mainly by sputtering or CVD.
The functional layer 203 is formed by laminating a plurality of thin films of an organic compound as described above, and each thin film is formed by a vacuum deposition method.
The back electrode layer 205 is a metal thin film such as aluminum and is formed by a vacuum evaporation method.

Thus, when manufacturing an organic EL device, a vacuum deposition method is frequently used. Here, the vacuum deposition method is a technique for forming a film using a vacuum deposition apparatus as disclosed in Patent Document 1, for example.
That is, the vacuum evaporation apparatus is constituted by a vacuum chamber and an evaporation apparatus that evaporates the thin film material. A vacuum chamber can install a glass substrate.
The evaporation apparatus is composed of a heating device using electric resistance or an electron beam, and a crucible for storing a thin film material.

In many cases, the glass substrate is installed in a horizontal posture on the ceiling side of the vacuum chamber. On the other hand, the crucible of the evaporator is installed at the lower part of the glass substrate.
Then, the thin film material in the crucible is heated by electric resistance or the like, evaporated and scattered upward and deposited on the lower surface of the glass substrate.

JP 2006-274370 A

  Although the vacuum deposition apparatus of the prior art can form a film having a desired quality, there is a complaint that the productivity is low. That is, the conventional vacuum deposition apparatus can form only one kind of film. That is, the vacuum chamber of the conventional vacuum vapor deposition apparatus has only one crucible, only a function of producing one kind of film, and a plurality of films cannot be produced by one vacuum vapor deposition apparatus. Therefore, for example, after forming a film in one chamber, it is necessary to transport the substrate via a transfer chamber or a load lock chamber, and move to the next vacuum deposition apparatus to manufacture the organic EL on a single glass substrate. It took time to stack the elements.

  Therefore, the present invention focuses on the above-mentioned problems of the prior art, and enables the deposition of a plurality of layers with a single vapor deposition apparatus, and develops a vapor deposition apparatus with a large number of products that can be manufactured per unit time. It is an object to do.

As a measure to solve the above-mentioned problems, a method was proposed in which a plurality of crucibles were formed in a single vapor deposition apparatus by installing a plurality of crucibles in a vacuum chamber and switching the crucibles to be used for film formation. .
However, this measure has been concerned about deterioration of the thin film material and problems that the thin film material condenses and adheres to the inner wall of a vacuum chamber or the like.
That is, in order to continuously laminate a film on a single glass substrate, not only the crucible currently in use but also other crucibles must be maintained at a high temperature. At least the thin film material to be formed next needs to be preheated. On the other hand, in order to prevent the thin film material from condensing and adhering to the inner wall of the space where the crucible is installed, the inner wall of the space where the crucible is installed needs to be kept at a high temperature.

However, the materials for the respective layers to be formed are different and the boiling points are different, so that the appropriate heat retention temperature is different. For example, assuming that the functional layer 203 is formed with a single vacuum deposition apparatus, the thin film material for the hole injection layer 210 is placed in the first crucible, and the thin film material for the hole transport layer 211 is the second. It is necessary to put the thin film material of the light emitting layer 212 into the third crucible and to put the thin film material for the electron transport layer 213 into the fourth crucible and to evaporate each, but the space where the crucible is installed If the inner wall is kept at a temperature suitable for the thin film material having the highest boiling point, other thin film materials are transformed by heat.
Conversely, if the temperature is kept at a temperature suitable for a thin film material having a low boiling point, another thin film material adheres to the inner wall of the space.

Therefore, further studies were made to solve this problem, and the invention of claim 1 was completed.
That is, the invention according to claim 1 has a vacuum chamber in which a base material can be placed, the base material is placed in the vacuum chamber, and a thin film material is evaporated to deposit a film of a predetermined component on the base material. In the apparatus, a thin film material discharge unit that discharges a thin film material to a substrate, a plurality of evaporation devices that evaporate the thin film material, a plurality of evaporation device installation units that install the evaporation device, the evaporation device installation unit, and the thin film A vapor passage unit that moves the vapor of the thin film material generated by the evaporation device in communication with the material discharge unit to the thin film material discharge unit, a switching unit that switches the evaporation device that supplies the thin film material to the thin film material discharge unit, and each evaporation Vapor deposition apparatus characterized in that it has a generator heat retaining means for retaining the apparatus installation section and a passage heat retaining means for retaining the vapor passage section, and is capable of keeping the evaporation apparatus installation section and the vapor passage section at different temperatures. It is.

In the vapor deposition apparatus of the present invention, it has a generator heat retaining means for retaining the evaporator installation section and a passage heat retaining means for retaining the vapor passage section, and further keeps the evaporator installation section and the vapor passage section at different temperatures. Can do. Therefore, each evaporator installation part and a steam passage part can be kept at an appropriate temperature.
For example, when forming the functional layer 203 (FIG. 20) of the organic EL element with the vapor deposition apparatus of the present invention, for example, four evaporation apparatuses are prepared, and the thin film material for the hole injection layer 210 is prepared in the first evaporation apparatus. The thin film material for the hole transport layer 211 is placed in the second evaporation device, the thin film material for the light emitting layer 212 is placed in the third evaporation device, and the thin film material for the electron transport layer 213 is placed in the fourth evaporation device. Put in.
Then, each of them is evaporated, and each evaporator installation section is kept at a temperature suitable for the thin film material of each layer.
On the other hand, the steam passage section keeps the temperature that is equal to or higher than the highest maximum target temperature among the target temperatures of the generating section heat retaining means as the target temperature.
Each evaporator has time for preparatory heating in addition to the actual operation time, but each evaporator installation part is kept at a temperature suitable for the thin film material of each layer. No thin film material adheres to the wall.
On the other hand, since the vapor passing part is kept at a high temperature, the thin film material does not adhere to the wall. Although the vapor passage part is kept at a high temperature, since the time required for the vapor of the thin film material to pass through is short, there is little opportunity for each thin film material to contact the inner wall of the vapor passage part. There is no deterioration.

  The invention described in claim 2 has a generator temperature setting means for setting a target temperature of the evaporator installation section and a passage temperature setting means for setting the target temperature of the steam passage section. It is a vapor deposition apparatus as described in above.

In the vapor deposition apparatus of the present invention, the vapor deposition apparatus has a generation unit heat retention unit that retains the temperature of the evaporator installation unit, and further includes a generation unit temperature setting unit that sets a target temperature of the generation unit heat retention unit. Therefore, each evaporator installation part can be kept at a temperature corresponding to the thin film material.
Moreover, the vapor deposition apparatus of the present invention has a passage heat retaining means for retaining the vapor passage portion, and further includes a passage temperature setting means for setting a target temperature of the passage heat retaining means.
Therefore, it is possible to keep the steam passage part at an appropriate temperature.

  The vapor passage section has a main flow path section and a plurality of branch flow path sections connected to the main flow path section, the main flow path section is connected to the thin film material discharge section, and the branch flow path section is connected to the evaporator installation section. It is recommended that they are connected (claim 3).

  The main flow path part and the branch flow path part may be constituted by a pipe line, or may be constituted by a duct or the like. Furthermore, the flow path may be configured by providing a partition in the apparatus.

  The invention according to claim 4 is the vapor deposition apparatus according to claim 3, wherein the switching means is an on-off valve, and the on-off valve is attached to the branch flow path.

  The on-off valve is not particularly limited as long as it can be substantially fully closed. For this reason, not only those equipped with a housing and a valve body such as a butterfly valve, a gate valve, and a ball valve, but also a shutter that moves in a sliding direction and a wing-type closing door are included in the on-off valve. Of course, a valve-like structure such as a needle valve is also included in the on-off valve.

  According to a fifth aspect of the present invention, scavenging means for supplying a scavenging gas to the thin film material discharge portion is provided, the scavenging gas is a gas at normal temperature, and the thin film material vapor remaining in the thin film material discharge portion is scavenged. The vapor deposition apparatus according to any one of claims 1 to 4, wherein the vapor deposition apparatus can be substituted with a gas for use.

  According to the present invention, the scavenging gas can expel the vapor of the thin film material remaining in the thin film material discharge portion, so that mixing of the thin film material does not occur.

  The invention for forming a film using a vapor deposition apparatus uses the vapor deposition apparatus according to any one of claims 1 to 5 to evaporate different thin film materials in each vapor deposition apparatus, and keeps each vapor deposition apparatus installation section at a heat generating section. The temperature is maintained at the target temperature corresponding to each thin film material by the means, and the passage temperature keeping means keeps the temperature above the highest maximum target temperature among the target temperatures of each generating part heat keeping means as the target temperature, and switches the switching means. A film forming method characterized in that different types of thin film materials are sequentially discharged from the thin film material discharge portion, and a plurality of layers of films are laminated on the substrate.

  In the invention for manufacturing an organic EL device using a vapor deposition device, at least a first electrode layer, a functional layer including a light emitting layer made of a thin film of a plurality of organic compounds, and a second electrode layer are sequentially laminated on a substrate. A method of manufacturing an organic EL device by using the vapor deposition device according to any one of claims 1 to 5 and evaporating each of a plurality of organic compounds constituting a functional layer with the vapor deposition device. A method for manufacturing a device (claim 7).

  Since the vapor deposition apparatus of the present invention can perform film lamination with a single apparatus, the number of substrates that can be formed per unit time is large, and the productivity is high.

  The same applies to the film forming method of the present invention. Since the films are stacked with one vapor deposition apparatus, the number of base materials that can be formed per unit time is large and the productivity is high.

  The same applies to the manufacturing method of the organic EL device of the present invention, and since the films constituting the functional layer are laminated with one vapor deposition device, the number of substrates that can be formed per unit time is large, and the productivity Is expensive.

It is a conceptual diagram of the vacuum evaporation system of 1st Embodiment of this invention. It is a perspective view inside the vacuum evaporation system of FIG. It is a perspective view of the crucible employ | adopted with the vacuum evaporation system of FIG. It is a disassembled perspective view which shows the structure of the vacuum chamber and crucible installation room which are employ | adopted with the vacuum evaporation system of FIG. It is a front view of the thin film material discharge | release part employ | adopted with the vacuum evaporation system of FIG. (A) And (b) is explanatory drawing which shows the process at the time of forming the functional layer of an organic electroluminescent apparatus using the vacuum evaporation system of FIG. (C) And (d) is explanatory drawing which shows the process at the time of forming the functional layer of an organic electroluminescent apparatus using the vacuum evaporation system of FIG. 1, and shows the process following FIG. (E) And (f) is explanatory drawing which shows the process at the time of forming the functional layer of an organic electroluminescent apparatus using the vacuum evaporation system of FIG. 1, and shows the process following FIG. (G) And (h) is explanatory drawing which shows the process at the time of forming the functional layer of an organic electroluminescent apparatus using the vacuum evaporation system of FIG. 1, and shows the process following FIG. It is a perspective view of the thin film material discharge | release part and glass substrate of the vacuum evaporation system of 2nd Embodiment of this invention. It is a perspective view of the thin film material discharge | release part and glass substrate of the vacuum evaporation system of 3rd Embodiment of this invention. It is a conceptual diagram of the vacuum evaporation system of 4th Embodiment of this invention. It is a conceptual diagram of the vacuum evaporation system of 5th Embodiment of this invention. It is a conceptual diagram of the vacuum evaporation system of 6th Embodiment of this invention. It is a conceptual diagram of the vacuum evaporation system of 7th Embodiment of this invention. It is a perspective view which shows arrangement | positioning of the crucible installation chamber of the vacuum evaporation system of 8th Embodiment of this invention. It is an example of the conceptual diagram of the organic EL device which explains simply the layer composition of an integrated type organic EL device. (A)-(f) is sectional drawing of the board | substrate which shows each process of the manufacturing method of the organic electroluminescent apparatus of FIG. It is sectional drawing which shows the typical layer structure of an organic electroluminescent apparatus. It is sectional drawing which shows the typical layer structure of an organic EL element.

Embodiments of the present invention will be further described below.
As shown in FIG. 1, the vacuum vapor deposition apparatus 1 according to the first embodiment of the present invention has a vacuum chamber 2, in which a substrate holding wall 3 and four evaporation devices 5 a, 5 b, 5c, 5d, a steam chamber 6, and four crucible installation chambers (evaporator installation portions) 12a, 12b, 12c, 12d are incorporated. That is, the vacuum evaporation apparatus 1 includes a first evaporator 5a, a second evaporator 5b, a third evaporator 5c, and a fourth evaporator 5d.
The vacuum vapor deposition apparatus 1 has a first crucible installation chamber 12a, a second crucible installation chamber 12b, a third crucible installation chamber 12c, and a fourth crucible installation chamber 12d.
Furthermore, the vacuum evaporation apparatus 1 is provided with the control apparatus 62 for adjusting the temperature of each part.

The vacuum chamber 2 is a member having a wide space 8 in which a glass substrate (base material) 7 can be installed, similarly to the known one.
The vacuum chamber 2 is airtight. A vacuum pump 9 is connected to the vacuum chamber 2, and the inside can be maintained in a high vacuum atmosphere.

  The substrate holding wall 3 is a wall-shaped part, and a substrate holder (not shown) is provided. A cooling pipe 33 is attached to the back surface of the substrate holding wall 3. A coolant is circulated through the cooling pipe 33 to maintain the temperature of the substrate holding wall 3 at a constant temperature.

  The evaporators 5a, 5b, 5c, 5d are constituted by a known crucible 10 and an electric heater 11 for vaporization. The crucible 10 is of a groove type as shown in FIG. That is, the crucible 10 has a long and thin shape. The crucibles 10 of the evaporators 5a, 5b, 5c, and 5d all have the same structure. For the sake of explanation, the crucible built in the first evaporator 5a is used as the first crucible 10a, and the second evaporation is performed. The crucible built in the apparatus 5b is defined as a first crucible 10b. Hereinafter, the alphabets assigned to the numbers of the evaporator 5 and the crucible 10 are unified.

  The structure and function of the evaporators 5a, 5b, 5c, and 5d are the same as those known in the art, and a thin film material can be placed in the crucible 10, and the thin film material can be melted and vaporized by the vaporizing electric heater 11.

The crucible installation chambers (evaporation device installation portions) 12a, 12b, 12c, and 12d are small rooms into which the evaporation devices 5a, 5b, 5c, and 5d are placed, and are independent of each other, and each has a space inside. In addition, openings 14a, 14b, 14c, and 14d are provided above crucible installation chambers 12a, 12b, 12c, and 12d, and switching shutters (switching means) 17a, 17b, 17c, and 17d are provided in the openings 14, respectively. . The switching shutters (switching means) 17a, 17b, 17c, 17d can fully close the openings 14a, 14b, 14c, 14d, respectively, and function as on-off valves.
Installation chamber side electric heaters (generating unit heat retaining means) 18a, 18b, 18c, 18d are attached to the outer peripheral surfaces of the crucible installation chambers 12a, 12b, 12c, 12d. Furthermore, the crucible installation chambers 12a, 12b, 12c and 12d are provided with installation chamber side temperature sensors 28a, 28b, 28c and 28d.
Inside the crucible installation chambers 12a, 12b, 12c, and 12d, one evaporator 5a, 5b, 5c, and 5d is stored, respectively.

The steam chamber 6 functions as a passage through which the vapor of the thin film material passes and forms a space for accommodating the crucible installation chambers (evaporation device installation portions) 12a, 12b, 12c, 12d. The longitudinal flow path forming part 26 and the thin film material discharging part 25 are integrated. The interior of the steam chamber 6 functions as a steam passage 13.
In other words, the crucible installation portion 16 of the vapor chamber 6 has a relatively wide space at the lowest position, and the crucible installation chambers 12a, 12b, 12c, and 12d described above are installed side by side. Further, as described above, in the crucible installation chambers 12a, 12b, 12c, and 12d, the evaporators 5a, 5b, 5c, and 5d are respectively stored.

  There is a space between the upper surface 65 of each crucible installation chamber (evaporation device installation portion) 12 a, 12 b, 12 c, 12 d and the ceiling surface 66 of the crucible installation portion 16 in the steam chamber 6. It functions as the passage part 67. In addition, the horizontal direction steam passage part 67 also serves as a main flow path part. Moreover, the portions of the openings 14a, 14b, 14c, and 14d of the crucible installation chambers 12a, 12b, 12c, and 12d function as a short branch channel.

  In the present embodiment, an air supply pipe 43 that connects the lateral steam passage portion 67 and the outside of the steam chamber 6 is provided. The air supply pipe 43 penetrates the wall surface of the vacuum chamber 2 and communicates with the outside. Note that an inert gas cylinder 47 such as argon or nitrogen is connected to the air supply pipe 43 via an on-off valve 45 and a pressure reducing valve 46. The pressure reducing valve 46 can reduce the pressure of the cylinder 47 to a pressure considerably lower than the atmospheric pressure.

  The vertical flow path forming unit 26 is located above the crucible installation unit 16 and forms a vertical steam passage unit 15 communicating with the crucible installation unit 16.

As shown in FIG. 2, the longitudinal flow path forming portion 26 employed in the present embodiment is a plate having a rectangular outer shape, and there are large-area planar portions 20 and 21 on the front side and the back side. The flat portions 20 and 21 are both rectangular.
The side wall portions 22 and 23 and the top wall portion 24 that connect the flat surface portions 20 and 21 have a smaller area than the above-described flat surface portions 20 and 21.
In the present embodiment, the vertical steam passage 15 is surrounded by the flat portions 20 and 21, the side walls 22 and 23, and the top wall 24, and the vertical steam passage 15 is connected to the crucible installation portion 16 as shown in FIG. 1. Communicate.

In the present embodiment, the flat surface portion 20 of the longitudinal flow path forming portion 26 functions as the thin film material discharge portion 25. That is, the flat portion 20 is provided with a number of holes 27 as shown in FIGS. The size of the hole 27 is not uniform, and the one arranged on the upper side is larger than the one arranged on the lower side.
The thin film material discharge unit 25 adopts a raw material supply method called an area source among those skilled in the art, and discharges the vaporized thin film material from each hole 27 as will be described later.

  Further, in the present embodiment, flow path heat retaining electric heaters (passage heat retaining means) 35, 36, and 37 are attached to the outer peripheral portion of the steam chamber 6. Further, a passage-side temperature sensor 38 is attached to the vapor chamber 6.

As described above, the vacuum deposition apparatus 1 of the present embodiment includes the substrate holding wall 3, the four evaporation devices 5a, 5b, 5c, and 5d, the vapor chamber 6, and the four crucible installation chambers (evaporation). (Device installation part) 12a, 12b, 12c, 12d is built in, and the vapor chamber 6 is installed in the lower part of the vacuum chamber 2.
That is, as shown in the layout of FIG. 1, the crucible installation part 16 of the steam chamber 6 is in the lower part of the vacuum chamber 2, and the vertical flow path forming part 26 of the steam chamber 6 stands at a position near one side of the vacuum chamber 2. Has been established. Accordingly, the flat surface portion 20 (thin film material discharge portion 25) of the longitudinal flow path forming portion 26 faces the center direction of the vacuum chamber 2, and all the holes 27 of the thin film material discharge portion 25 open outward from the vicinity of the center. ing.

  The substrate holding wall 3 is provided on the crucible installation part 16 of the vapor chamber 6. Therefore, in the state where there is no glass substrate 7, the substrate holding wall 3 faces the vertical flow path forming part 26 of the vapor chamber 6.

In the vacuum vapor deposition apparatus 1 of the present embodiment, the glass substrate 7 is placed on the substrate holding wall 3. In other words, the glass substrate 7 is installed on the substrate holding wall 3 in a vertical orientation. One surface of the glass substrate 7 is in contact with the substrate holding wall 3, and the glass substrate 7 is fixed to the substrate holding wall 3 with a substrate holder (not shown).
The size of the glass substrate 7 is substantially the same as that of the thin film material discharge portion 25.

The signals from the installation room side temperature sensors 28 a, 28 b, 28 c and 28 d and the signal from the passage side temperature sensor 38 are input to the control device 62. Further, the installation room side electric heaters (generating part heat retaining means) 18 a, 18 b, 18 c, 18 d and the flow path heat retaining electric heaters (passage heat retaining means) 35, 36, 37 are generated by signals output from the control device 62. Be controlled.
In this embodiment, the four sets of installation room side electric heaters (generating unit heat retaining means) 18a, 18b, 18c, and 18d are individually controlled. Therefore, in this embodiment, the temperatures of the crucible installation chambers (evaporator installation units) 12a, 12b, 12c, and 12d can be individually controlled. That is, in the present embodiment, the target temperatures of the crucible installation chambers 12a, 12b, 12c, and 12d can be individually controlled by the control device 62.
More specifically, the control device 62 includes a first temperature controller 62a that sets a target temperature of the first crucible installation chamber 12a, and a second temperature controller 62b that sets a target temperature of the second crucible installation chamber 12b. The third temperature controller 62c for setting the target temperature of the third crucible installation chamber 12c and the fourth temperature controller 62d for setting the target temperature of the fourth crucible installation chamber 12d are provided.

Further, in the present embodiment, the flow path heat retaining electric heaters (passage heat retaining means) 35, 36 and 37 are also controlled. Therefore, in the present embodiment, the temperature of the vertical flow path forming portion 26 and the horizontal direction steam passing portion 67 as the steam passage portion 13 is controlled independently from the crucible installation chambers 12a, 12b, 12c, and 12d.
More specifically, the control device 62 includes a fifth temperature regulator 63 that sets the target temperature of the steam passage 13.

  Next, the operation of the vacuum vapor deposition apparatus 1 of the present embodiment will be described by taking as an example the process of forming the functional layer 203 of the organic EL apparatus.

When the functional layer 203 of the organic EL element is formed by the vacuum vapor deposition apparatus 1 of the present embodiment, a thin film material for the hole injection layer 210 is placed in the crucible 10a of the first crucible installation chamber 12a, and the second crucible The thin film material of the hole transport layer 211 is put into the crucible 10b of the installation chamber 12b, the thin film material of the light emitting layer 212 is put into the crucible 10c of the third crucible installation chamber 12c, and electrons are put into the crucible 10d of the fourth crucible installation chamber 12d. A thin film material for the transport layer 213 is placed.
And each thin film material is evaporated. Note that the switching shutters 17a, 17b, 17c and 17d of the crucible installation chambers 12a, 12b, 12c and 12d are closed.

The crucible installation chambers 12a, 12b, 12c, and 12d are kept at a temperature suitable for the thin film material of each layer.
That is, the first temperature controller 62a is set to a temperature suitable for keeping the vapor of the thin film material for the hole injection layer 210. Similarly, the set temperature of the second temperature controller 62b is set to a temperature suitable for keeping the vapor of the thin film material for the hole transport layer 211, and the set temperature of the third temperature controller 62c is set to the thin film for the light emitting layer 212. A temperature suitable for keeping the material vapor is set, and the temperature set for the fourth temperature controller 62d is set to a temperature suitable for keeping the vapor of the thin film material for the electron transport layer 213.
Note that the temperature suitable for keeping the vapor of the thin film material is about 10 degrees Celsius to 30 degrees Celsius higher than the boiling point of each thin film material under vacuum.

  In each crucible installation chamber 12a, 12b, 12c, 12d, the thin film material is vaporized, and the switching shutters 17a, 17b, 17c, 17d of each crucible installation chamber 12a, 12b, 12c, 12d are closed. The installation chambers 12a, 12b, 12c, and 12d are filled with the vapor of the thin film material. However, since the crucible installation chambers 12a, 12b, 12c, and 12d are kept at a temperature suitable for the thin film material of each layer, the thin film material does not deteriorate and the thin film material does not adhere to the walls.

The steam passage 13 is kept at the highest temperature (maximum target temperature) among the target temperatures of the crucible installation chambers 12a, 12b, 12c, and 12d.
That is, the set temperature of the fifth temperature controller 63 is made to coincide with the highest temperature among the set temperatures of the first temperature controller 62a to the fourth temperature controller 62d.

  In parallel with this, the glass substrate 7 is installed in the vacuum chamber 2, and the inside of the vacuum chamber 2 is decompressed to a high vacuum state.

First, the hole injection layer 210 is formed on the glass substrate 7.
That is, as shown in FIG. 6A, the switching shutter 17a provided in the first crucible installation chamber 12a is opened, and the opening 14a of the first crucible installation chamber 12a is opened. As a result, the vapor of the thin film material for the hole injection layer 210 evaporated in the first crucible 10a enters the horizontal vapor passage portion 67 from the switching shutter 17a, and further passes through the vertical vapor passage portion 15 to the thin film material discharge portion. 25 holes 27 are emitted toward the glass substrate 7.
More specifically, the vapor of the thin film material in the first crucible installation chamber 12a is transferred to the lateral steam passage 67 (the upper surface 65 of each crucible installation chamber 12a, 12b, 12c, 12d and the crucible installation portion in the steam chamber 6). The space formed between the 16 ceiling surfaces 66 flows in the horizontal direction of the drawing. Further, the steam enters the vertical direction steam passage part 15 formed in the vertical flow path forming part 26 from the horizontal direction steam passage part 67. Further, the vapor is discharged from the hole 27 of the thin film material discharge portion 25 toward the glass substrate 7.

The holes 27 provided in the thin film material discharge portion 25 are distributed with a planar spread. The thin film material discharge portion 25 faces the glass substrate 7. Further, the size of the thin film material discharge portion 25 is substantially equal to that of the glass substrate 7 and both face each other in parallel.
Furthermore, since the substrate holding wall 3 is in contact with the outer surface of the glass substrate 7 and the substrate holding wall 3 has a cooling function, the temperature of the glass substrate 7 is maintained at a low temperature.

  Therefore, the vapor | steam of the thin film material discharge | released from the hole 27 of the thin film material discharge | release part 25 is sprayed uniformly on the whole surface of the glass substrate 7, heat is taken on the surface of the glass substrate 7, and it solidifies. As a result, a thin film material layer for the hole injection layer 210 is formed on the surface of the glass substrate 7.

Further, the vapor passage portion 13 through which the vapor of the thin film material for the hole injection layer 210 passes (the lateral direction vapor passage portion 67 and the longitudinal direction vapor passage portion 15) is the target temperature of the crucible installation chambers 12a, 12b, 12c, and 12d. In this case, the vapor is not condensed in the vapor passage portion 13 because the temperature is kept at the highest temperature and is higher than at least the boiling point of the thin film material for the hole injection layer 210.
Further, since the time required for the steam to pass through the steam passage 13 (the lateral steam passage 67 and the longitudinal steam passage 15) is extremely short, the thin film material is not altered.

  While the hole injection layer 210 is formed, the other crucible installation chambers 12b, 12c, and 12d are filled with the vapors of the respective thin film materials, but the crucible installation chambers 12b, 12c, and 12d are Since the temperature is kept at a temperature suitable for each thin film material, the thin film material is not altered or condensed on the inner wall.

When film formation of the hole injection layer 210 is completed, the above-described vapor passage part 13 (the horizontal direction steam passage part 67 and the vertical direction steam passage part 15) is scavenged.
That is, as shown in FIG. 6B, the switching shutter 17a provided in the first crucible installation chamber 12a is closed, the on-off valve 45 is opened only for a short time, and the steam passage 13 (the horizontal steam passage 67 and the vertical steam passage 67) is opened. Only a small amount of inert gas is introduced into the directional steam passage 15).

As described above, the lateral steam passage portion 67 communicates with the outside of the vacuum chamber 2 through the air supply pipe 43, and the air supply pipe 43 contains an inert gas through the on-off valve 45 and the pressure reducing valve 46. A cylinder 47 is connected. The pressure reducing valve 46 reduces the pressure of the cylinder 47 to a pressure considerably lower than the atmospheric pressure. Therefore, when the on-off valve 45 is opened for a short time, the inert gas in the cylinder 47 is introduced into the lateral steam passage portion 67.
That is, the inert gas supplied from the cylinder 47 has a pressure equal to or lower than the atmospheric pressure, but since the horizontal steam passage 67 is decompressed to a high vacuum, the inert gas is introduced into the horizontal steam passage 67. Further, it passes through the vertical steam passage 15 and is discharged from the hole 27 of the thin film material discharge portion 25.
As a result, the vapor of the thin film material remaining in the steam passage 13 (the horizontal steam passage 67 and the longitudinal steam passage 15) is pushed out to the inert gas, and the inside of the steam passage 13 is replaced with the inert gas. Is done.

  However, since the introduced inert gas is extremely small, the degree of vacuum in the vacuum chamber 2 is not excessively lowered. Further, since the vacuum pump 9 is always operated, even if the vacuum degree is lowered, the vacuum pump 9 is immediately restored to the original vacuum degree.

When the scavenging process in the vapor passage 13 is finished, the hole transport layer 211 is subsequently formed. Specifically, as shown in FIG. 7C, the switching shutter 17b provided in the second crucible installation chamber 12b is opened, and the second crucible installation chamber 12b is opened. As a result, the vapor of the thin film material for the hole transport layer 211 evaporated from the second crucible 10b enters the horizontal vapor passage portion 67 from the switching shutter 17b, and further passes through the vertical vapor passage portion 15 to the thin film material discharge portion. It is emitted toward the glass substrate 7 from the 25 holes 27.
Details of the flow of the vapor are the same as the film formation of the hole injection layer 210 described above, and enter the vertical direction vapor passage part 15 formed in the vertical flow path formation part 26 across the horizontal direction vapor passage part 67. Further, the light is discharged from the hole 27 of the thin film material discharge portion 25 toward the glass substrate 7.

Also in this case, the vapor passage portion 13 through which the vapor of the thin film material of the hole transport layer 211 passes (the transverse vapor passage portion 67 and the longitudinal vapor passage portion 15) are both in the crucible installation chambers 12a, 12b, 12c, and 12d. Since the temperature is kept at the highest target temperature (maximum target temperature) and is at least higher than the boiling point of the thin film material of the hole transport layer 211, the vapor does not condense in the vapor passage portion 13.
Further, since the time required for the vapor to pass through the vapor passage portion 13 is extremely short, the thin film material is not altered.

  While the hole transport layer 211 is formed, the other crucible installation chambers 12a, 12c, and 12d are filled with vapors of the respective thin film materials, but each crucible installation chamber 12a, 12c, Since 12d is kept at a temperature suitable for each thin film material, the thin film material does not deteriorate or condense on the inner wall.

When the film formation of the hole transport layer 211 is completed, the steam passage 13 (the transverse steam passage 67 and the longitudinal steam passage 15) is scavenged as shown in FIG.
The scavenging method and action are the same as the scavenging after the hole injection layer 210 described above.

When the scavenging process in the vapor passage 13 is finished, the light emitting layer 212 is subsequently formed.
Specifically, as shown in FIG. 8E, the switching shutter 17c provided in the third crucible installation chamber 12c is opened, and the third crucible installation chamber 12c is opened. As a result, the vapor of the thin film material for the light emitting layer 212 evaporated from the third crucible 10c enters the horizontal vapor passage portion 67 from the switching shutter 17c, and further passes through the vertical vapor passage portion 15 to the thin film material discharge portion 25. It is emitted from the hole 27 toward the glass substrate 7.

When the film formation of the light emitting layer 212 is completed, the above-described steam passage 13 (lateral steam passage 67 and longitudinal steam passage 15) is scavenged (FIG. 8F).
Subsequently, an electron transport layer 213 is formed.
Specifically, as shown in FIG. 9G, the switching shutter 17d provided in the fourth crucible installation chamber 12d is opened, and the fourth crucible installation chamber 12d is opened. As a result, the vapor of the thin film material for the electron transport layer 213 evaporated from the fourth crucible 10d enters the horizontal vapor passage portion 67 from the switching shutter 17d, and further passes through the vertical vapor passage portion 15 to pass through the thin film material discharge portion 25. From the hole 27 toward the glass substrate 7.

When the film formation of the electron transport layer 213 is finished, the above-described vapor passage part 13 (the lateral direction steam passage part 67 and the longitudinal direction steam passage part 15) is scavenged (FIG. 9 (h)), and a series of film formation steps is finished. .
The formed glass substrate 7 is taken out from the vacuum chamber 2, and becomes an organic EL device or the like through a desired post-processing.

Next, another embodiment of the present invention will be described. In the embodiment described below, the same members as those in the previous embodiment are denoted by the same reference numerals, and redundant description is omitted.
In the previous embodiment, the thin film material discharge portion 25 having a large number of holes 27 was exemplified. That is, in the previous embodiment, all adopt a raw material supply method called an area source, and a large number of holes 27 are distributed in a plane, but other raw material supply methods are adopted. Also good.
FIG. 10 (second embodiment) employs a raw material supply system called a point source, in which the raw material is discharged from one opening.
That is, in the vacuum vapor deposition apparatus 70 shown in FIG. 10, a tubular vapor passage part 72 projects from the crucible installation part 71. The steam passage portion 72 is bent at the front end in the horizontal direction, and the opening 75 faces the glass substrate 7.
In addition, a flow passage heat retaining electric heater (passage heat retaining means) 73 is attached to the steam passage portion 72.
Also in this embodiment, the heat retention temperature of each crucible installation chamber (evaporator installation part) can be set and controlled individually. Also, the target temperature of the steam passage 72 can be set and controlled independently of each crucible installation chamber.
Other configurations are the same as those of the previous embodiment.

FIG. 11 (third embodiment) adopts a raw material supply method called a linear source, and discharges the raw material from the opening row 77 arranged vertically. In this embodiment, the opening row 77 functions as a thin film material discharge portion.
When the configuration of FIG. 11 is employed, it is necessary to move the glass substrate 7 relative to the opening row 77.
In the vicinity of the opening row 77, a flow path heat retaining electric heater (passage heat retaining means) 76 is attached.
Also in this embodiment, the heat retention temperature of each crucible installation chamber (evaporator installation part) can be set and controlled individually. Also, the target temperature of the steam passage part can be set and controlled independently from each crucible installation chamber.
Other configurations are the same as those of the previous embodiment.

In the above-described embodiment, the evaporator 5 such as the crucible 10 is disposed in the vacuum chamber 2, but the evaporator 5 may be installed outside the vacuum chamber 2.
The vacuum vapor deposition apparatus 85 shown in FIG. 12 (fourth embodiment) has four crucible installation chambers (evaporation apparatus installation sections) 93a, 93b, 93c, 93d, and has four crucible installation chambers 93a, 93b, 93c. , 93 d are both outside the vacuum chamber 2. A vapor chamber 86 corresponding to the vapor passage portion 13 of the vapor chamber 6 is provided in the vacuum chamber 2. The four crucible installation chambers 93 a, 93 b, 93 c, 93 d and the vapor passage part 13 in the vacuum chamber 2 are connected by a pipe 88.
The pipe 88 has a main pipe part (main flow path part) 83 and a plurality of branch pipe parts (branch flow path parts) 87 connected to the main pipe part 83. Specifically, the pipe line 88 includes a manifold 96 having five introduction-side ports and one discharge-side port, and the discharge-side port is connected to the vapor passage portion 13 in the vacuum chamber 2.

On the other hand, the four introduction-side ports are connected to the respective crucible installation chambers 93a, 93b, 93c, and 93d through on-off valves 97a, 97b, 97c, and 97d, respectively.
The on-off valves (switching means) 97a, 97b, 97c, 97d employed in the present embodiment can be fully closed.

In addition, an inert gas cylinder 47 is connected to the remaining introduction-side port 98 via an opening / closing valve 45 and a pressure reducing valve 46.
In the vacuum vapor deposition apparatus 85 of this embodiment, different types of thin film materials are put into the crucibles 10a, 10b, 10c, and 10d in the crucible installation chambers 93a, 93b, 93c, and 93d.
In the vacuum evaporation apparatus 85 of this embodiment, the thin film material discharge | released toward the glass substrate 7 can be changed by switching on-off valve 97a, 97b, 97c, 97d.

  Similarly to the vapor chamber 6 in the above-described embodiment, also in this embodiment, a flow path heat retaining electric heater (passage heat retaining means) 50 is attached to the steam chamber 86. The manifold 96 is also provided with a flow path heat retaining electric heater (passage heat retaining means) 51. Further, a flow path heat retaining electric heater (passage heat retaining means) 53 is also attached to the pipe 52 between the manifold 96 and the steam chamber 86.

In addition, installation chamber side electric heaters (generating unit heat retaining means) 18a, 18b, 18c, and 18d are attached to the outer peripheral surfaces of the crucible installation chambers 93a, 93b, 93c, and 93d.
Similarly to the vacuum vapor deposition apparatus 1 (FIG. 1) of the first embodiment, in the vacuum vapor deposition apparatus 85 of the present embodiment, the control device 62 installs the flow path heat retaining electric heaters (passage heat retaining means) 50, 51, 53. The room side electric heaters (generating unit heat retaining means) 18a, 18b, 18c, 18d are controlled. Further, the temperature of the electric heaters 50, 51, 53 for channel heat insulation (passage heat retaining means) and the electric heaters (generating section heat retaining means) 18a, 18b, 18c, 18d can be set separately. The installation room side electric heaters (generating unit heat retaining means) 18a, 18b, 18c, 18d can be individually set in temperature.

  Similar to the vacuum vapor deposition apparatus 1 (FIG. 1) of the first embodiment, the vacuum vapor deposition apparatus 85 of the present embodiment also differs from the crucibles 10a, 10b, 10c, 10d in the crucible installation chambers 93a, 93b, 93c, 93d. By introducing different types of thin film materials, different types of thin films can be sequentially formed. The target temperature of the pipe 88 and the steam passage 13 at this time can be set in the same manner as the steam passage 13 in the first embodiment. That is, the pipe 88 and the steam passage 13 are kept at the highest temperature (maximum target temperature) among the target temperatures of the crucible installation chambers 93a, 93b, 93c, and 93d. As a result, the temperature of the pipe line 88 and the vapor chamber 86 is maintained at a temperature sufficiently higher than the boiling point of each thin film material. Therefore, any thin film material is solidified in the pipe line 88 or the vapor chamber 86. There is no end to it. According to this configuration, it is not necessary to change the temperature of the pipe 88 or the vapor chamber 86 when the evaporators 93a, 93b, 93c, and 93d are switched (when the thin film material is switched).

  Also in the present embodiment, as in the first embodiment (FIGS. 6 to 9), when switching between the evaporators 93a, 93b, 93c, and 93d, an inert gas is passed through the conduit 88 and the vapor passage section 13, The vapor of the remaining thin film material is pushed out and removed (scavenging process).

In the above-described embodiment, an inert gas is introduced from the cylinder in order to scavenge the steam passage portion.
As another scavenging method, for example, as shown in FIG. 13, an empty small chamber 55 is connected to one inlet side port of the manifold 96 via an open / close valve 56, and the open / close valve 66 is opened during the scavenging. It is also possible to adopt a configuration in which the air is sucked by the vacuum in the vacuum chamber 2. Further, the inside of the small chamber 55 can be depressurized to a low vacuum in advance, and the amount of gas sucked into the vacuum chamber 2 can be limited to a small amount. For the same reason, by making the volume of the small chamber 55 sufficiently small with respect to the volumes of the vacuum chamber 2, the conduit 88 and the vapor chamber 86, the amount of gas sucked into the vacuum chamber 2 is limited to a small amount. Measures are also conceivable.

  In the above-described embodiment, an example in which the evaporation apparatus and the four crucible installation chambers are provided has been described as an example, but the number may be larger or smaller. In short, it is desirable to have the number of evaporators and crucible installation chambers corresponding to the number of layers to be laminated, and it may have 10 or more evaporators and crucible installation chambers.

  In the above-described embodiment, the configuration in which the four crucible installation chambers can be set to individual temperatures has been shown, but the configuration in which the crucible installation chamber is divided for each temperature region and the temperature of the plurality of crucible installation chambers is collectively adjusted is also possible. Is possible.

  For example, when there are eight crucible installation chambers 93a, 93b, 93c, 93d, 93e, 93f, 93g, 93h as in the vacuum vapor deposition apparatus shown in FIG. 14, the eight crucible installation chambers 93 are kept at a high temperature and a medium temperature. It may be divided into a plurality of sections, such as heat insulation and low temperature insulation, and the temperature of the crucible installation chambers 93 included in the sections may be adjusted together.

In the above-described embodiments, the film formation is performed with the glass substrate 7 placed in the vertical position, but the film formation may be performed while the glass substrate 7 is held in a horizontal position.
FIG. 15 (seventh embodiment) shows an example of a vacuum evaporation apparatus that performs film formation while holding the glass substrate 7 in a horizontal posture.
In the vacuum vapor deposition apparatus 80 shown in FIG. 15, the substrate holding wall 81 is horizontally disposed on the top surface side of the vacuum chamber 2, and the thin film material discharge unit 25 and the flow path forming unit 82 constituting the thin film material discharge unit are horizontal. Except for the posture, it has the same structure as the vacuum vapor deposition apparatus shown in FIG.
Therefore, the same number is attached | subjected to the same member and detailed description is abbreviate | omitted.

  In the embodiment described above, the plurality of crucible installation chambers are arranged in a line, but the present invention is not limited to this. For example, as shown in FIG. 16, the crucible installation chambers may be arranged in a plurality of rows. In the example shown in FIG. 16 (eighth embodiment), nine crucible installation chambers 12a to 12i are arranged side by side in a total of three rows, with three as one row. Also in this embodiment, the crucible installation chambers 12a to 12i may be installed in the vacuum chamber 2 as shown in FIG. 1 or may be installed outside the vacuum chamber 2 as shown in FIG.

Next, the structure of an organic EL device that is desirably manufactured by the above-described vacuum evaporation apparatus 1 and the like, and the manufacturing method thereof will be described.
The organic EL device 100 exemplified below is an integrated organic EL device. The integrated organic EL device 100 is obtained by electrically connecting organic EL elements formed in a strip shape (hereinafter referred to as “unit EL elements”) in series.
The layer configuration of the integrated organic EL device 100 is as shown in FIG. 17, which is the same as the organic EL device 200 (FIG. 19) having the basic configuration described above, but is provided with a plurality of grooves and has a single planar organic structure. The EL element is divided into strip-shaped unit EL elements.
That is, in the integrated organic EL device 100, the transparent electrode layer 102, the functional layer 103, and the back electrode layer 104 are sequentially laminated on the glass substrate 101, and grooves 110, 111, 112, and 113 are formed in each layer. Has been.
More specifically, the first groove 110 is formed in the transparent electrode layer 102, and the transparent electrode layer 102 is divided into a plurality of parts. The functional layer 103 is formed with a second groove 111, and the functional layer 103 is divided into a plurality of parts. Further, a part of the back electrode layer 104 enters the second groove 111, and the transparent electrode layer 102 is formed at the bottom of the groove. Is in contact with.
Further, the third groove 112 of the functional layer 103 and the fourth groove 113 provided in the back electrode layer 104 communicate with each other to form a deep common groove 115 as a whole.

The integrated organic EL device 100 includes a first groove 110 provided in the transparent electrode layer 102 and a functional layer 103 (specifically, a hole injection layer 210, a hole transport layer 211, a light emitting layer 212, and an electron transport layer). 213) and the common groove 115 provided in the back electrode layer 104 divides each thin layer to form independent unit EL elements 120a, 120b,. As described above, a part of the back electrode layer 104 enters the second groove 111, a part of the back electrode layer 104 is in contact with the transparent electrode layer 102, and one unit EL element 120a is adjacent. The unit EL element 120b is electrically connected in series.
That is, an externally supplied current flows from the transparent electrode layer 102 side through the functional layer 103 toward the back electrode layer 104 side, but a part of the back electrode layer 104 passes through the second groove 111 and passes through the transparent electrode layer 102. Flows to the transparent electrode layer 102 of the adjacent unit EL element 120b through the first unit EL element 120a. As described above, in the integrated organic EL device 100, all the unit elements are electrically connected in series, and all the unit elements emit light.

When the integrated organic EL device 100 is manufactured, the transparent electrode layer 102 is formed on the substrate (base material) 101 having a light transmitting property such as glass as shown in FIG. Film.
For the transparent electrode layer 102, indium tin oxide (ITO), tin oxide (SnO ₂ ), zinc oxide (ZnO), or the like is used. The transparent electrode layer 102 is formed on the substrate 101 by sputtering or CVD.

  Subsequently, a first laser scribe process is performed, and the first groove 110 is formed by laser scribe on the transparent electrode layer 102 as shown in FIG.

Next, this substrate 101 is put into a vacuum evaporation apparatus, and a hole injection layer 210, a hole transport layer 211, a light emitting layer 212, and an electron transport layer 213 are sequentially deposited, and as shown in FIG. Layer 103 is formed.
Also when forming this functional layer 103, the vacuum evaporation apparatus 1 of this embodiment, etc. can be used. In particular, when the vacuum deposition apparatus 1 of this embodiment is employed, the hole injection layer 210, the hole transport layer 211, the light emitting layer 212, and the electron transport layer 213 are formed with a single vacuum deposition apparatus. Therefore, the functional layer 103 can be formed with high productivity.

  Then, a second laser scribing process is performed on the substrate 101 taken out from the vacuum evaporation apparatus, and a second groove 111 is formed in the functional layer 103 as shown in FIG.

Subsequently, the substrate 101 is inserted into a vacuum deposition apparatus, and a back electrode layer 104 made of a metal material such as aluminum (Al) or silver (Ag) is formed on the functional layer 103 as shown in FIG. To do.
The vacuum evaporation apparatus 1 of this invention can be used also about the process of forming the back surface electrode layer 104.

  Subsequently, a third laser scribing step is performed to form a common groove 115 in both the back electrode layer 104 and the functional layer 103 as shown in FIG.

  Further, the operation of forming the power supply electrode (not shown), forming the separation groove (not shown) on the outside, removing the back electrode layer 104 etc. on the outer portion of the separation groove, and sealing with the sealing portion are performed. An EL device (photoelectric conversion device) is completed.

1 Vacuum deposition equipment (vapor deposition equipment)
2 Vacuum chamber 3 Substrate holding plate 5 Evaporator 6 Steam chamber 7 Glass substrate (base material)
9 Vacuum pumps 10a, 10b, 10c, 10d Crucibles 10e, 10f, 10g, 10h Crucibles 11a, 11b, 11c, 11d Electric heaters for vaporization 12a, 12b, 12c, 12d Crucible installation part (evaporation apparatus installation part)
12e, 12f, 12g, 12h, 12i crucible installation part (evaporation apparatus installation part)
13 Steam Passing Section 15 Longitudinal Steam Passing Section 16 Crucible Installation Parts 17a, 17b, 17c, 17d Switching Shutter (Switching Means)
18 Installation room side electric heater (Generator heat insulation means)
25 Thin film material discharge portion 27 Holes 28a, 28b, 28c, 28d Installation room side temperature sensors 35, 36, 37 Electric heater for passage heat insulation (passage heat retaining means)
38 Passage side temperature sensor 43 Air supply piping 45 On-off valve 46 Pressure reducing valve 47 Cylinder 50, 51, 53 Electric heater for passage heat insulation (passage heat retaining means)
55 Small chamber 56 On-off valve 62 Control device 67 Lateral vapor passage 70 Vacuum deposition apparatus (deposition apparatus)
71 Crucible installation part (evaporation device installation part)
72 Steam Passing Section 76 Channel Heating Electric Heater (Passage Heating Means)
80 Vacuum deposition equipment (deposition equipment)
81 Substrate holding wall 82 Channel forming part 83 Main pipe part (main channel part)
85 Vacuum deposition equipment (deposition equipment)
86 Steam chamber 87 Branch pipe part (branch flow path part)
88 Pipes 93a, 93b, 93c, 93d Crucible installation chamber (evaporator installation part)
93e, 93f, 93g, 93h Crucible installation chamber (evaporator installation part)
96 Manifold 97a, 97b, 97c, 97d On-off valve (switching means)
97e, 97f, 97g, 97h Open / close valve (switching means)
100 Organic EL device

Claims (7)

  In a vapor deposition apparatus that has a vacuum chamber in which a base material can be installed, installs the base material in the vacuum chamber, evaporates a thin film material, and deposits a film of a predetermined component on the base material. A thin film material discharge unit for discharging the thin film material, a plurality of evaporation devices for evaporating the thin film material, a plurality of evaporation device installation units for installing the evaporation device, and the evaporation device connected to the evaporation device installation unit and the thin film material discharge unit A vapor passage section for moving the vapor of the thin film material generated by the gas to the thin film material discharge section, a switching means for switching between the evaporation devices that supply the thin film material to the thin film material discharge section, and a generation section heat retaining means for keeping the respective evaporation apparatus installation sections warm And a passage heat retaining means for retaining the vapor passage part, and the evaporator installation part and the vapor passage part can be kept at different temperatures.   The vapor deposition apparatus according to claim 1, further comprising a generator temperature setting unit that sets a target temperature of the evaporator installation unit and a passage temperature setting unit that sets a target temperature of the vapor passage unit.   The vapor passage section has a main flow path section and a plurality of branch flow path sections connected to the main flow path section, the main flow path section is connected to the thin film material discharge section, and the branch flow path section is connected to the evaporator installation section. The vapor deposition apparatus according to claim 1, wherein the vapor deposition apparatus is connected.   The vapor deposition apparatus according to claim 3, wherein the switching means is an on-off valve, and the on-off valve is attached to the branch flow path portion.   A scavenging means for supplying a scavenging gas to the thin film material discharge part is provided, the scavenging gas is a gas at room temperature, and the thin film material vapor remaining in the thin film material discharge part can be replaced with the scavenging gas. The vapor deposition apparatus according to any one of claims 1 to 4.   A vapor deposition apparatus according to any one of claims 1 to 5 is used to evaporate different thin film materials in each vapor deposition apparatus, and each evaporation apparatus installation section is kept warm at a target temperature corresponding to each thin film material by a generating section heat retaining means. The passage heat retaining means keeps the temperature higher than the highest target temperature among the target temperatures of each generating section heat retaining means as the target temperature, and sequentially switches different types of thin film materials from the thin film material discharge section by switching the switching means. Then, a film forming method comprising laminating a plurality of layers on a substrate.   The method of manufacturing an organic EL device by sequentially laminating at least a first electrode layer, a functional layer including a light emitting layer made of a thin film of a plurality of organic compounds, and a second electrode layer on a substrate. A method for producing an organic EL device, comprising: using any one of the vapor deposition devices, and evaporating each of a plurality of organic compounds constituting the functional layer by the vapor deposition device.

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