JP2003077662A - Method and device for manufacturing organic electroluminescent element - Google Patents

Method and device for manufacturing organic electroluminescent element

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Publication number
JP2003077662A
JP2003077662A JP2002178461A JP2002178461A JP2003077662A JP 2003077662 A JP2003077662 A JP 2003077662A JP 2002178461 A JP2002178461 A JP 2002178461A JP 2002178461 A JP2002178461 A JP 2002178461A JP 2003077662 A JP2003077662 A JP 2003077662A
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JP
Japan
Prior art keywords
evaporation
organic
evaporation source
substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002178461A
Other languages
Japanese (ja)
Inventor
Junji Kido
淳二 城戸
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Individual
Original Assignee
Individual
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Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP2002178461A priority Critical patent/JP2003077662A/en
Publication of JP2003077662A publication Critical patent/JP2003077662A/en
Pending legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/548Controlling the composition

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

PROBLEM TO BE SOLVED: To solve problems in a conventional manufacturing device that accurate control of a component ratio changing in the direction of thickness of a film is difficult and production of uniform products is impossible because, for example, a difference in light emitting colors occurs in each product. SOLUTION: A manufacturing method for an organic electroluminescent element having an inclined organic layer composed of a plurality of organic compounds of at least one layer between opposing anode electrode and cathode electrode and having different mixture ratios in the direction of thickness is provided to manufacture the inclined organic layer by moving a substrate 11 relatively for a plurality of evaporation sources 3 of the organic compound arranged across a partition plate 5 in the same vacuum film formation chamber 2. Moreover, a manufacturing device 1 for the organic electroluminescent element is provided to enable accurate control of a component ratio.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は有機エレクトロルミ
ネッセンスデバイス(以後、有機EL素子と略称する)
における有機層の製造方法および製造装置に関するもの
である。
TECHNICAL FIELD The present invention relates to an organic electroluminescence device (hereinafter referred to as an organic EL element).
And a manufacturing apparatus for the organic layer in 1.

【0002】[0002]

【従来の技術】一般に、低分子材料を用いた有機EL素
子は電極間に有機薄膜層を挟んだ構造である。これま
で、この有機層の構造として幾つか提案されている。代
表的なものはITO(Indium tin oxide)からなる陽極
を形成したガラス基板上に真空蒸着法にてホール輸送性
材料層を蒸着し、その後、同じ真空装置内にて蒸発源を
ホール輸送性材料から電子輸送性材料に変え、電子輸送
性材料層を蒸着して積層構造の有機層を形成する。次に
低仕事関数の金属材料からなる陰極を形成した有機EL
素子があり、電極から電荷を注入すると有機層から発光
が得られる。
2. Description of the Related Art Generally, an organic EL element using a low molecular weight material has a structure in which an organic thin film layer is sandwiched between electrodes. Up to now, several structures of this organic layer have been proposed. A typical example is that a hole-transporting material layer is deposited on a glass substrate on which an anode made of ITO (Indium tin oxide) is formed by a vacuum deposition method, and then an evaporation source is used as a hole-transporting material in the same vacuum device. To an electron transporting material, and an electron transporting material layer is vapor-deposited to form an organic layer having a laminated structure. Next, an organic EL in which a cathode made of a low work function metal material is formed
There is an element, and light is emitted from the organic layer when charges are injected from the electrodes.

【0003】また、有機層における積層構造の界面をな
くすべく上記各層の有機材料を混ぜて、成分の濃度勾配
をもたせた構造(以降、傾斜構造という)の提案があ
る。たとえば、US-PAT5853905,US-PAT5925980,US-PAT61
14055,US-PAT6130001,特開2001-23776には傾斜構造を備
えた有機EL素子10(図10参照)が記載されてい
る。
Further, there has been proposed a structure (hereinafter referred to as an inclined structure) in which the organic materials of the respective layers described above are mixed so as to eliminate the interface of the laminated structure in the organic layer to give a concentration gradient of components. For example, US-PAT5853905, US-PAT5925980, US-PAT61
14055, US-PAT6130001, JP 2001-23776 A describes an organic EL element 10 (see FIG. 10) having a tilted structure.

【0004】これらの特許において、濃度勾配を持たせ
た層(以後、傾斜有機層という)は、ホール輸送性材料
と電子輸送性材料との混合比を厚み方向において変化さ
せている。例えば、特開2001-23776によると、図10に
示すように、ガラスなどの基板11上に敷設された陽電
極12と、陰電極14との間に挟まれる有機層13が傾
斜有機層のみからなる単層構造であり、典型的には図1
1のような濃度勾配を有しており、傾斜有機層から発光
が生じている。
In these patents, a layer having a concentration gradient (hereinafter referred to as a graded organic layer) changes the mixing ratio of the hole transporting material and the electron transporting material in the thickness direction. For example, according to Japanese Patent Laid-Open No. 2001-23776, as shown in FIG. 10, the organic layer 13 sandwiched between a positive electrode 12 and a negative electrode 14 laid on a substrate 11 made of glass or the like is composed of only a tilted organic layer. It is a single-layer structure, typically shown in FIG.
It has a concentration gradient of 1 and light is emitted from the inclined organic layer.

【0005】また、これらの傾斜構造を備えた有機EL
素子10を作製するには、従来は図17のように基板挿
入室91、複数の成膜室92、および基板取り出し室9
3と、異なる室間で基板を移動させるための搬送アーム
99を中央に備えた装置を用いて作製する。傾斜有機層
は、図18のような基板回転機構95を備えた成膜室9
2内に複数の蒸発源94を備えた製造装置90を用いて
作製する。たとえば、陽電極12となる薄膜の形成され
た基板11を製造装置90にセットし、自転させる。次
に、真空蒸着法により基板11上に有機層13の薄膜を
作製する。各蒸発ルツボ94a,94bにはそれぞれホ
ール輸送性材料と電子輸送性材料が充填されている。濃
度勾配をつけるために、電子輸送性材料は時間の経過と
ともに蒸発速度が速くなるようにヒーター96bなどを
制御し、ホール輸送性材料は時間の経過とともに蒸発速
度が遅くなるようにヒーター96aなどを制御して各々
の材料を同時に蒸着する。なお、蒸発速度の制御は、水
晶振動子を用いた膜厚モニター97a、97bを用いて
行う。尚、図中に符号98で示すものは排気装置であ
る。
Also, an organic EL device having these tilt structures
In order to fabricate the element 10, conventionally, as shown in FIG. 17, a substrate insertion chamber 91, a plurality of film formation chambers 92, and a substrate removal chamber 9 are used.
3 and a device having a transfer arm 99 at the center for moving the substrate between different chambers. The tilted organic layer is formed in the film forming chamber 9 including the substrate rotating mechanism 95 as shown in FIG.
It is manufactured by using the manufacturing apparatus 90 provided with a plurality of evaporation sources 94 in 2. For example, the substrate 11 on which the thin film to be the positive electrode 12 is formed is set in the manufacturing apparatus 90 and rotated. Next, a thin film of the organic layer 13 is formed on the substrate 11 by the vacuum evaporation method. Each of the evaporation crucibles 94a and 94b is filled with a hole transporting material and an electron transporting material. In order to provide a concentration gradient, the electron transporting material controls the heater 96b or the like so that the evaporation rate increases with time, and the hole transporting material controls the heater 96a or the like so that the evaporation rate decreases with time. Controlled, simultaneous deposition of each material. The evaporation rate is controlled using the film thickness monitors 97a and 97b using a crystal oscillator. The reference numeral 98 in the drawing is an exhaust device.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、このよ
うな装置を用いて傾斜構造を備えた有機EL素子を作製
する場合には、次のような問題点があった。
However, when an organic EL element having an inclined structure is manufactured using such an apparatus, there are the following problems.

【0007】問題点1:膜の厚み方向に変化する2つの
成分比を制御する必要があるため、再現性が悪く、可変
の蒸発速度制御が困難である。 問題点2:膜厚を変更する場合、経時変化する蒸発速度
の条件出しに多くの時間が必要となる。 問題点3:膜面方向に成分比を均一にするために、基板
を回転させるための機構が必要となり、成膜時間以外
に、回転、および、基板交換の時間が必要である。
Problem 1: Since it is necessary to control the ratio of two components that change in the thickness direction of the film, reproducibility is poor and variable evaporation rate control is difficult. Problem 2: When changing the film thickness, it takes a lot of time to set the conditions for the evaporation rate that changes with time. Problem 3: In order to make the component ratio uniform in the film surface direction, a mechanism for rotating the substrate is required, and in addition to the film formation time, rotation and substrate exchange time are required.

【0008】本発明は、以上のような問題点を解決すべ
く、比較的簡単な構成の装置により、安定して傾斜構造
を備えた有機EL素子を作製できる方法および製造装置
を提供すること目的としている。
In order to solve the above problems, it is an object of the present invention to provide a method and a manufacturing apparatus capable of stably manufacturing an organic EL element having a tilt structure by a device having a relatively simple structure. I am trying.

【0009】[0009]

【課題を解決するための手段】本発明は、対向する陽極
電極と陰極電極の間に少なくとも1層の複数の有機化合
物から構成され、混合比が厚さ方向で異なる傾斜有機層
を有する有機エレクトロルミネッセンス素子の製造方法
であって、同一の真空成膜室内に仕切り板を挟んで配置
した複数の有機化合物の蒸発源に対して相対的に基板を
移動させること、および/または同一の真空成膜室内に
おける基板の相対的な移動方向において蒸発量が異なる
複数の蒸発源を備えることにより傾斜有機層を作製する
ことを特徴とする有機エレクトロルミネッセンス素子の
製造方法および製造装置等を提供することで、いわゆる
傾斜有機層を備えた有機EL素子を安定して作製するこ
とができる。
SUMMARY OF THE INVENTION The present invention is an organic electro-luminescent device having a tilted organic layer composed of at least one layer of a plurality of organic compounds between opposing anode and cathode electrodes and having a mixing ratio different in the thickness direction. A method for manufacturing a luminescence element, comprising moving a substrate relative to evaporation sources of a plurality of organic compounds arranged with a partition plate in the same vacuum film formation chamber, and / or the same vacuum film formation. By providing a manufacturing method and a manufacturing apparatus of an organic electroluminescence element, which is characterized in that a tilted organic layer is prepared by providing a plurality of evaporation sources having different evaporation amounts in a relative movement direction of a substrate in a room, An organic EL element having a so-called tilted organic layer can be stably manufactured.

【0010】[0010]

【発明の実施の形態】以下、この発明の好適な実施形態
を図1から図5を参照しながら、詳細に説明する。図1
は本発明による好適な傾斜型構造の有機EL素子10
(図10を参照)の製造装置1の一実施形態を示す。本
発明において傾斜型構造の有機EL素子10は、いわゆ
るインライン方式の真空成膜装置を用いて作製する。イ
ンライン方式の真空成膜装置は、一定速度で基板11が
移動する機能を有し、複数の成膜室2により構成されて
いる。少なくとも成膜室の1室は、蒸発源3が2つ以上
あり、蒸発源3の間に濃度勾配を制御するための仕切り
板5が置かれた真空蒸着装置により構成される。
BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of the present invention will now be described in detail with reference to FIGS. Figure 1
Is a preferred organic EL device 10 having a tilted structure according to the present invention.
An embodiment of the manufacturing apparatus 1 (see FIG. 10) is shown. In the present invention, the tilted structure organic EL element 10 is manufactured using a so-called in-line type vacuum film forming apparatus. The in-line type vacuum film forming apparatus has a function of moving the substrate 11 at a constant speed and is composed of a plurality of film forming chambers 2. At least one of the film forming chambers includes two or more evaporation sources 3 and a vacuum evaporation apparatus in which a partition plate 5 for controlling the concentration gradient is placed between the evaporation sources 3.

【0011】図面において符号11は基板で、図面左か
ら右方向に向かって所定の速度で移動する。図では第1
成膜室2aから第4成膜室2dまでの4つの成膜室を備
えた例を示し、各成膜室2(a〜d)の上部に基板11
が搬送される搬送室2eが設けられている。また、これ
らの空間2a〜2eは全て真空状態としている。
In the drawing, reference numeral 11 is a substrate, which moves from the left to the right in the drawing at a predetermined speed. 1st in the figure
An example in which four film forming chambers from the film forming chamber 2a to the fourth film forming chamber 2d are provided is shown, and the substrate 11 is provided above each film forming chamber 2 (a to d).
There is provided a transfer chamber 2e in which is transferred. Further, all of these spaces 2a to 2e are in a vacuum state.

【0012】各成膜室2(a〜d)には蒸発源3を備え
ており、搬送されてくる基板11表面に成膜する。蒸発
源3は、有機EL素子の構造によって異なり、例えば第
1成膜室2aにてホール注入層、第2成膜室2bにおい
て傾斜有機層、第3成膜室2cにおいて第1陰極材料、
第4成膜室2dにおいて第2陰極材料をそれぞれ成膜す
る。各成膜室において成膜する材料および成膜室の数
は、作製しようとする有機EL素子構造に応じて適宜選
択する。
Each film forming chamber 2 (a to d) is provided with an evaporation source 3 for forming a film on the surface of the substrate 11 being conveyed. The evaporation source 3 differs depending on the structure of the organic EL element. For example, a hole injection layer in the first film forming chamber 2a, a tilted organic layer in the second film forming chamber 2b, a first cathode material in the third film forming chamber 2c,
The second cathode material is deposited in the fourth deposition chamber 2d. The material for forming a film in each film forming chamber and the number of film forming chambers are appropriately selected according to the structure of the organic EL element to be produced.

【0013】図2は傾斜有機層を成膜する第2成膜室2
bの概略図である。第2成膜室2bの下部には、2つの
ルツボなど蒸発源3a,3bと、蒸発源3(a,b)の
間に配置した仕切り板5が設置されており、ルツボ蒸発
源の周りには各ルツボ蒸発源の温度を制御するヒーター
4a,4bが設けてある。なお、6は排気ポンプで、バ
ルブを通して成膜室内の圧力を所定値に制御可能なもの
としている。
FIG. 2 shows a second film forming chamber 2 for forming a graded organic layer.
It is the schematic of b. In the lower part of the second film forming chamber 2b, evaporation sources 3a and 3b such as two crucibles, and a partition plate 5 arranged between the evaporation sources 3 (a and b) are installed, and the crucible evaporation sources are surrounded. Are provided with heaters 4a and 4b for controlling the temperature of each crucible evaporation source. An exhaust pump 6 can control the pressure in the film forming chamber to a predetermined value through a valve.

【0014】本発明第1の実施形態の有機EL素子製造
装置は上記のような構成とされており、2つのルツボ蒸
発源3a,3bから同時に有機材料を蒸着することで、
搬送されている基板11表面に傾斜有機層を再現性よく
成膜することができる。
The organic EL element manufacturing apparatus according to the first embodiment of the present invention is configured as described above. By simultaneously depositing an organic material from the two crucible evaporation sources 3a and 3b,
The inclined organic layer can be formed on the surface of the substrate 11 being transported with good reproducibility.

【0015】ここで、成膜される傾斜有機層と仕切り板
5との関係について説明する。仕切り板5の高さの調整
により、図3のような3種類(タイプ1、2、3)の傾
斜構造を形成できる。タイプ1、タイプ2、および、タ
イプ3は、それぞれ図4A、4B、および4Cのような
仕切り板5を蒸発源の間に設置することにより形成でき
る。尚、図2中に符号7(a,b)で示すものは膜厚モ
ニタであり、図4中に符号Zで示すものは仕切り板5の
高さに応じて変化する成分混合の境界線である。
Here, the relationship between the inclined organic layer to be formed and the partition plate 5 will be described. By adjusting the height of the partition plate 5, three types (types 1, 2, 3) of inclined structures as shown in FIG. 3 can be formed. Type 1, Type 2, and Type 3 can be formed by installing partition plates 5 as shown in FIGS. 4A, 4B, and 4C between evaporation sources. It should be noted that the reference numeral 7 (a, b) in FIG. 2 is a film thickness monitor, and the reference numeral Z in FIG. 4 is a boundary line of the component mixture that changes according to the height of the partition plate 5. is there.

【0016】また、たとえば、タイプ2の傾斜構造を形
成する装置である図4Bにおいて、防着板8の開口面積
を小さくすることにより、タイプ1の傾斜構造を形成で
きる。膜厚の制御は、蒸発速度および基板11の搬送速
度を制御することにより容易に行うことができる。
Further, for example, in FIG. 4B, which is an apparatus for forming a type 2 inclined structure, a type 1 inclined structure can be formed by reducing the opening area of the deposition-inhibitory plate 8. The film thickness can be easily controlled by controlling the evaporation speed and the transport speed of the substrate 11.

【0017】このような仕切り板5を設けた成膜室と一
定方向に移動する基板11とを備えた有機EL素子製造
装置1とすることで、作製しようとする傾斜構造の有機
EL素子を再現性よく、しかも簡単に作製することがで
きる。特に、仕切り板5の長さ(仕切り板と基板との距
離)、防着板8の開口面積に応じて、蒸発源3の一定蒸
発速度と基板11の搬送速度を制御することで、様々な
傾斜構造の有機EL素子を得ることができる。
By using the organic EL element manufacturing apparatus 1 provided with the film forming chamber provided with the partition plate 5 and the substrate 11 which moves in a fixed direction, the organic EL element having an inclined structure to be manufactured is reproduced. It can be easily manufactured with good performance. In particular, by controlling the constant evaporation rate of the evaporation source 3 and the transfer rate of the substrate 11 in accordance with the length of the partition plate 5 (distance between the partition plate and the substrate) and the opening area of the deposition-inhibitory plate 8, various values can be obtained. It is possible to obtain an organic EL device having a tilted structure.

【0018】なお、本実施形態において、蒸発源3はル
ツボに限らず点蒸発源、線蒸発源、面蒸発源のいずれで
もよい。また、蒸発源部の仕切り板5で仕切られた領域
(図面右側または左側)に置く蒸発源は、1つに限定さ
れず、2つ以上の蒸発源が配置されていてもよい。ま
た、1つの成膜室内において蒸発源部の仕切り板5で仕
切られた領域は、2つの領域に限定されず、3つ以上の
領域に仕切られていてもよい。たとえば、3つの領域に
仕切られた成膜室の場合には、図5(A)のような配置
となる。更に言えば、仕切り板5の形状は板状に限ら
ず、例えば図5(B)に示すように蒸発源部の周囲を略
筒状に囲む形状とした囲周板15としても良い。
In the present embodiment, the evaporation source 3 is not limited to the crucible and may be any of a point evaporation source, a linear evaporation source and a surface evaporation source. Further, the number of evaporation sources placed in a region (right side or left side in the drawing) partitioned by the partition plate 5 of the evaporation source unit is not limited to one, and two or more evaporation sources may be arranged. Further, the region partitioned by the partition plate 5 of the evaporation source section in one film forming chamber is not limited to two regions, and may be partitioned into three or more regions. For example, in the case of a film forming chamber divided into three regions, the arrangement is as shown in FIG. Further, the shape of the partition plate 5 is not limited to the plate shape, and may be, for example, the surrounding plate 15 that surrounds the evaporation source portion in a substantially cylindrical shape as shown in FIG. 5B.

【0019】次に別の実施形態について説明する。な
お、先の実施形態と同一の機能を有する箇所は同一の符
号を付し詳細な説明を省略する。この実施形態において
は、先の蒸発源部の周囲に図6のような加熱した蒸発源
3を囲む囲み板9を備えている。囲み板9は、蒸発源3
a,3bの周囲を囲む円筒状のステンレスなどの金属
や、セラミック材料からなる板で、蒸発源3から適宜の
距離を離して設置する。また、該囲み板9は図示しない
温度制御装置により所定の温度に制御可能なものとして
いる。
Next, another embodiment will be described. It should be noted that parts having the same functions as those in the previous embodiment are designated by the same reference numerals, and detailed description thereof will be omitted. In this embodiment, a surrounding plate 9 surrounding the heated evaporation source 3 as shown in FIG. 6 is provided around the evaporation source portion. The surrounding plate 9 is the evaporation source 3
A plate made of a metal such as stainless steel or a ceramic material that surrounds a and 3b is installed at a proper distance from the evaporation source 3. The surrounding plate 9 can be controlled to a predetermined temperature by a temperature control device (not shown).

【0020】蒸発源から蒸発した有機材料は、成膜室2
内においてほぼ放射状に広がって飛んで、基板11等に
付着する。その際、上記囲み板9をその飛散路内で、か
つ、基板への蒸着の妨げとならない位置、例えば、真空
装置の壁面に向かって飛ぶ飛散路を覆う見込み角度を覆
う領域に設置すると、蒸発源3から飛んできた有機材料
の一部は上記囲み板9にも付着する。
The organic material evaporated from the evaporation source is used in the film forming chamber 2
Inside, it spreads out almost radially and adheres to the substrate 11 and the like. At that time, if the surrounding plate 9 is installed in the scattering path and at a position that does not hinder the vapor deposition on the substrate, for example, in a region that covers a prospective angle that covers the scattering path flying toward the wall surface of the vacuum device, evaporation occurs. A part of the organic material that has flown from the source 3 also adheres to the surrounding plate 9.

【0021】このとき、囲み板9の温度を高温に制御す
ると、この囲み板9に付着した有機材料が再蒸発して基
板11に付着するので、材料の使用効率が著しく向上す
る。さらに真空成膜室の壁面に付着する利用されない有
機材料の絶対量が減少する。このことは壁面に付着し
て、微粒子ゴミの発生原因となる有機材料が低減される
ので、微粒子ゴミが基板11に付着することに起因する
不良発生を効果的に予防することになり歩留まり向上と
低コスト化をはかることができる。
At this time, if the temperature of the enclosing plate 9 is controlled to a high temperature, the organic material attached to the enclosing plate 9 is re-evaporated and attached to the substrate 11, so that the use efficiency of the material is significantly improved. In addition, the absolute amount of unused organic material adhering to the walls of the vacuum deposition chamber is reduced. This reduces the organic material that adheres to the wall surface and causes the generation of fine particle dust, so that the occurrence of defects due to the fine particle dust adhering to the substrate 11 is effectively prevented, and the yield is improved. The cost can be reduced.

【0022】なお、前記囲み板9の温度は、蒸発材料の
沸点、または、昇華点より高く、使用する材料が変性す
る温度より低い温度に制御すれば良い。蒸発材料は、一
般に有機EL素子に使用されている材料全般のいずれも
用いることができ、積層構造、単層構造、傾斜構造の有
機層のいずれを成膜する有機材料にも適用できる。
The temperature of the surrounding plate 9 may be controlled to a temperature higher than the boiling point or the sublimation point of the evaporation material and lower than the temperature at which the material used is denatured. As the evaporation material, any of the materials generally used for organic EL elements can be used, and it can be applied to any organic material for forming an organic layer having a laminated structure, a single layer structure, or a gradient structure.

【0023】次に、第3の実施形態について説明する。
なお、先の実施形態と同一の機能を有する箇所は同一の
符号を付し詳細な説明を省略する。上述した実施形態に
おいては同一の真空成膜室内に仕切り板を挟んで配置し
た複数の有機化合物の蒸発源に対して相対的に基板を移
動させることにより傾斜有機層を作製しているが、本実
施形態においては、蒸発源からの蒸発物の飛び出し方向
に指向性を与えることにより、傾斜有機層を作製してい
る。
Next, a third embodiment will be described.
It should be noted that parts having the same functions as those in the previous embodiment are designated by the same reference numerals, and detailed description thereof will be omitted. In the above-described embodiment, the tilted organic layer is produced by moving the substrate relative to the evaporation sources of a plurality of organic compounds arranged with the partition plate in the same vacuum film forming chamber. In the embodiment, the inclined organic layer is produced by giving directivity to the direction in which the evaporation material is ejected from the evaporation source.

【0024】図12は本発明による好適な傾斜型構造の
有機EL素子10(図10を参照)の製造装置の一実施
形態を示す。本実施形態においても傾斜型構造の有機E
L素子10をいわゆるインライン方式の真空成膜装置2
1を用いて作製する。一定速度で基板11が移動する機
能を有し、複数の蒸発源30を有する成膜室22と、排
気装置26により構成されている。また、成膜室の前後
にロードロック室28a、28bが設けられている。蒸
発源30は飛び出し方向に指向性を持って蒸発物が飛散
すると共に、少なくとも2つの蒸発源からの蒸発物が基
板11上に同時に成膜するものとされている。
FIG. 12 shows an embodiment of an apparatus for manufacturing the organic EL element 10 (refer to FIG. 10) having a preferred inclined structure according to the present invention. Also in this embodiment, the organic E having the tilted structure is used.
The L element 10 is a so-called in-line type vacuum film forming apparatus 2
1 is used. It has a function of moving the substrate 11 at a constant speed, and is composed of a film forming chamber 22 having a plurality of evaporation sources 30 and an exhaust device 26. Further, load lock chambers 28a and 28b are provided before and after the film forming chamber. The evaporation source 30 has a directivity in the ejection direction and the evaporation material is scattered, and the evaporation materials from at least two evaporation sources are simultaneously formed on the substrate 11.

【0025】図面において符号11は基板で、図面左か
ら右方向に向かって所定の速度で移動する。図ではロー
ドロック室28a、成膜室22およびロードロック室2
8bの上部に基板11が搬送される搬送室などが設けら
れている。また、成膜室22は図では仕切り板25
(a,b)により第1成膜室22a、第2成膜室22b
および第3成膜室22dの3つの成膜室を備えた例を示
している。なお、これらの空間は排気装置26により全
て真空状態としている。
In the drawings, reference numeral 11 is a substrate, which moves from the left to the right in the drawing at a predetermined speed. In the figure, the load lock chamber 28a, the film formation chamber 22 and the load lock chamber 2 are shown.
A transfer chamber or the like in which the substrate 11 is transferred is provided above 8b. Further, the film forming chamber 22 is shown as a partition plate 25 in the figure.
According to (a, b), the first film forming chamber 22a and the second film forming chamber 22b
An example including three film forming chambers, that is, the third film forming chamber 22d is shown. It should be noted that these spaces are all vacuumed by the exhaust device 26.

【0026】図では成膜室22に第1蒸発源30aから
第4蒸発源30dまでの4つの蒸発源30(a,b,
c,d)を備えており、搬送されてくる基板11表面に
成膜する。各蒸発源30は、有機EL素子の構造によっ
て蒸発範囲が異なる。例えば第1成膜室22aでは蒸発
源30aによりホール注入層、第2成膜室22bでは蒸
発源30bおよび蒸発源30cにより傾斜有機層、第3
成膜室22dでは蒸発源30dにより陰極材料をそれぞ
れ成膜する。各成膜室において成膜する材料、蒸発源の
数および成膜室の数は、作製しようとする有機EL素子
構造に応じて適宜選択する。
In the figure, four evaporation sources 30 (a, b, 30) from a first evaporation source 30a to a fourth evaporation source 30d are provided in the film forming chamber 22.
c, d), and forms a film on the surface of the substrate 11 being conveyed. The evaporation range of each evaporation source 30 differs depending on the structure of the organic EL element. For example, in the first film forming chamber 22a, the hole injection layer is formed by the evaporation source 30a, in the second film forming chamber 22b, the inclined organic layer is formed by the evaporation source 30b and the evaporation source 30c, and the third organic layer is formed.
In the film forming chamber 22d, the cathode material is formed into a film by the evaporation source 30d. The material for forming a film in each film forming chamber, the number of evaporation sources, and the number of film forming chambers are appropriately selected according to the organic EL element structure to be produced.

【0027】図13は傾斜有機層を成膜する第2成膜室
22bの概略図である。第2成膜室22bの下部には、
2つの蒸発源30b,30cが所定の照射範囲となるよ
うに指向性を持って蒸発物を飛散可能となるように所定
の角度に設置しており、各蒸発源の周りには蒸発源の温
度を制御するヒーター34b,34cが設けてある。な
お、26は排気ポンプで、バルブを通して成膜室内の圧
力を所定値に制御可能なものとしている。また、蒸発源
30は図14に示すように筒体31と、筒体31の下方
内部に蒸発物を交換可能にセットする収納部33と、所
定の量の蒸発物を飛散可能な所定の大きさとした細長矩
形のスリット32a及び所定の角度αでスリット32a
の周囲にて拡開したV型形状の指向範囲制御部32bと
が形成された開口部32と、周囲に設けられた蒸発源3
0の温度を制御するヒーター34とにより構成され、好
適にはカーボンにより形成されるが、窒化ボロン、アル
ミナ等のセラミックスや、Ti,Al,Cuなどの金属
により形成しても良い。
FIG. 13 is a schematic view of the second film forming chamber 22b for forming the graded organic layer. Below the second film forming chamber 22b,
The two evaporation sources 30b and 30c are installed at a predetermined angle so that the evaporation material can be scattered with directivity so as to be in a predetermined irradiation range, and the temperature of the evaporation source is set around each evaporation source. Heaters 34b and 34c for controlling the temperature are provided. An exhaust pump 26 can control the pressure in the film forming chamber to a predetermined value through a valve. As shown in FIG. 14, the evaporation source 30 includes a cylindrical body 31, a storage portion 33 in which the evaporated material is exchangeably set inside the cylindrical body 31, and a predetermined size capable of scattering a predetermined amount of the evaporated material. A narrow rectangular slit 32a and a slit 32a at a predetermined angle α
An opening 32 having a V-shaped directivity range controller 32b that is widened around the evaporation source, and an evaporation source 3 provided around the opening 32.
The heater 34 controls the temperature of 0, and is preferably formed of carbon, but may be formed of ceramics such as boron nitride or alumina, or metals such as Ti, Al, and Cu.

【0028】本発明第3の実施形態の有機EL素子製造
装置は上記のような構成とされており、2つの蒸発源3
0b,30cから同時に有機材料を蒸着することで、搬
送されている基板11表面に傾斜有機層を再現性よく成
膜する。
The organic EL element manufacturing apparatus according to the third embodiment of the present invention is configured as described above, and has two evaporation sources 3
By simultaneously depositing an organic material from 0b and 30c, a tilted organic layer is formed on the surface of the substrate 11 being transported with good reproducibility.

【0029】ここで、成膜される傾斜有機層と蒸発源3
0b、30cとの関係について説明する。蒸発源となる
有機化合物は蒸発源30の収納部33内に充填した後
に、筒体31内に嵌合され、ヒーター34により加熱さ
れて開口部32から飛散する。このとき指向範囲制御部
32bが飛散する蒸着物の範囲を制御すべく法線方向に
対し、例えば33°の角度で、孔32aからの長さが1
cmとして設けてあるので、蒸着物の飛散範囲を約66
°の範囲内に制御することができる。このように飛散範
囲を所定角度に制御した蒸発源30b,30cを成膜室
22bの下方に指向角度を調整して固定する。基板11
上における蒸発源30bによる蒸発範囲をB、蒸発源3
0cによる蒸発範囲をCと図示する。蒸発源30b,3
0cの取り付け角度、取り付け位置および開口部32
(孔32aおよび指向範囲制御部32b)を調整するこ
とにより、上述したような傾斜構造の有機層を形成でき
る。例えば図13では図面左側から搬送されてきた基板
11上に、蒸発範囲Bのみの位置においては蒸発源30
bによる蒸着物が成膜され、続いて右側に移動して蒸発
範囲BおよびCが重なる位置においては両蒸発源30
b、30cからの蒸着物が同時に蒸着され、最後に蒸発
範囲Cのみの位置で蒸発源30cからの蒸着物のみが成
膜される。このとき各蒸発源から基板上に到達する蒸着
物の量が蒸発源の蒸着範囲の周辺部に向かうにしたがっ
て蒸着量の少なくなるものとすれば、連続して混合比を
変化する傾斜構造を作製することができる。特に所定角
度に傾けた蒸発源を用いるので、蒸発源からの距離を大
きくして異なる蒸発源からの蒸発範囲が重なる領域を利
用して傾斜有機層を作製する場合に比べて、製造装置の
大きさをコンパクト化することができ、装置のコストお
よび設置スペースコストを低減することができ得る。な
お、符号Zで示すものは蒸着物の成分混合の境界線であ
る。
Here, the inclined organic layer to be formed and the evaporation source 3
The relationship with 0b and 30c will be described. The organic compound serving as the evaporation source is filled in the storage portion 33 of the evaporation source 30, then fitted into the cylindrical body 31, heated by the heater 34, and scattered from the opening 32. At this time, the pointing range controller 32b controls the range of the scattered deposits at an angle of, for example, 33 ° with respect to the normal direction, and the length from the hole 32a is 1 °.
Since it is provided as cm, the scattering range of the deposited material is about 66
It can be controlled within the range of °. In this way, the evaporation sources 30b and 30c whose scattering range is controlled to a predetermined angle are fixed below the film formation chamber 22b by adjusting the directivity angle. Board 11
The evaporation range by the evaporation source 30b above is B, and the evaporation source 3
The evaporation range by 0c is shown as C. Evaporation sources 30b, 3
0c mounting angle, mounting position and opening 32
By adjusting (the hole 32a and the directivity range control unit 32b), the organic layer having the above-described inclined structure can be formed. For example, in FIG. 13, the evaporation source 30 is provided only on the evaporation range B on the substrate 11 conveyed from the left side of the drawing.
At the position where the vapor deposition product of b is formed and subsequently moves to the right to overlap the evaporation ranges B and C, both evaporation sources 30
The vapor deposits from b and 30c are vapor-deposited at the same time, and finally only the vapor deposit from the vaporization source 30c is formed in a position only in the vaporization range C. At this time, if it is assumed that the amount of the vapor deposition material that reaches the substrate from each vaporization source decreases toward the periphery of the vapor deposition range of the vaporization source, a gradient structure in which the mixing ratio is continuously changed is produced. can do. In particular, since the evaporation source tilted at a predetermined angle is used, the size of the manufacturing apparatus is larger than that in the case where the inclined organic layer is produced by increasing the distance from the evaporation source and using the area where the evaporation ranges from different evaporation sources overlap. It is possible to reduce the size and reduce the cost of the device and the installation space cost. In addition, what is indicated by the symbol Z is a boundary line of the component mixture of the vapor deposition.

【0030】このような蒸発源30を設けた成膜室と一
定方向に移動する基板11とを備えた有機EL素子製造
装置21とすることで、作製しようとする傾斜構造の有
機EL素子を再現性よく、しかも簡単に作製することが
できる。なお、本実施形態において、蒸発源30は1つ
に限定されず、2つ以上の蒸発源が配置されていてもよ
い。また、傾斜構造の有機層を作製する成膜室も、同様
に一つに限定されず複数設けられていてもよい。
By using the organic EL element manufacturing apparatus 21 including the film forming chamber provided with such an evaporation source 30 and the substrate 11 that moves in a fixed direction, the organic EL element having the inclined structure to be manufactured is reproduced. It can be easily manufactured with good performance. In addition, in this embodiment, the number of the evaporation sources 30 is not limited to one, and two or more evaporation sources may be arranged. Further, similarly, the film forming chamber for forming the organic layer having the inclined structure is not limited to one, and a plurality of film forming chambers may be provided.

【0031】次に、第4の実施形態について説明する。
なお、先の実施形態と同一の機能を有する箇所は同一の
符号を付し詳細な説明を省略する。本実施形態において
は、蒸発源からの蒸発物の飛び出し量を制御した複数の
蒸発源を並設することにより、傾斜有機層を作成してい
る。図15および図16は本発明による好適な傾斜型構
造の有機EL素子10(図10を参照)を成膜する蒸発
源部の説明図である。本発明においても傾斜型構造の有
機EL素子10は、いわゆるインライン方式の真空成膜
装置を用いて作製する。インライン方式の真空成膜装置
は、例えば一定速度で基板11が移動する機能を有し、
複数の蒸発源30を有する成膜室22と、排気装置26
により構成されている。また、成膜室の前後にロードロ
ック室28a、28bが設けられている。蒸発源30は
飛び出し方向に指向性を持って蒸発物が飛散するものと
され、少なくとも2つの蒸発源からの蒸発物が基板11
上に同時に成膜するものとされている(図12参照)。
Next, a fourth embodiment will be described.
It should be noted that parts having the same functions as those in the previous embodiment are designated by the same reference numerals, and detailed description thereof will be omitted. In the present embodiment, the tilted organic layer is created by arranging a plurality of evaporation sources in parallel with each other in which the amount of evaporation of the evaporation materials from the evaporation source is controlled. 15 and 16 are explanatory views of an evaporation source part for forming a film on the organic EL element 10 (see FIG. 10) having a preferable inclined structure according to the present invention. Also in the present invention, the organic EL element 10 having the inclined structure is manufactured by using a so-called in-line type vacuum film forming apparatus. The in-line type vacuum film forming apparatus has a function of moving the substrate 11 at a constant speed,
A film forming chamber 22 having a plurality of evaporation sources 30, and an exhaust device 26
It is composed by. Further, load lock chambers 28a and 28b are provided before and after the film forming chamber. The evaporation source 30 has a directivity in the direction in which it evaporates, and the evaporation material is scattered.
It is supposed that the films are simultaneously formed on the upper surface (see FIG. 12).

【0032】図面において符号11は基板で、図面左か
ら右方向に向かって所定の速度で移動する。成膜室22
には複数の蒸発源を備えており、搬送されてくる基板1
1表面に成膜する。例えば第1成膜室22aにて蒸発源
30aによりホール注入層、第2成膜室22bにおいて
蒸発源41および蒸発源42により傾斜有機層、第3成
膜室22dにおいて蒸発源30dにより陰極材料をそれ
ぞれ成膜する。各成膜室において成膜する材料、蒸発源
の数および成膜室の数は、作製しようとする有機EL素
子構造に応じて適宜選択する(図12、15参照)。
In the drawings, reference numeral 11 is a substrate, which moves from the left to the right in the drawing at a predetermined speed. Film forming chamber 22
Is equipped with a plurality of evaporation sources, and the substrate 1 is conveyed.
1. Form a film on the surface. For example, a hole injection layer is formed by the evaporation source 30a in the first film forming chamber 22a, an inclined organic layer is formed by the evaporation source 41 and the evaporation source 42 in the second film forming chamber 22b, and a cathode material is formed by the evaporation source 30d in the third film forming chamber 22d. Each film is formed. The material to be deposited in each deposition chamber, the number of evaporation sources, and the number of deposition chambers are appropriately selected according to the organic EL element structure to be produced (see FIGS. 12 and 15).

【0033】第2成膜室22bの下部には、2つの輻射
加熱方式の長尺の蒸発源41、42が長手方向が基板移
動方向と平行になるように並設され、第1蒸発源41に
よる蒸発物と第2蒸発源42による蒸発物が基板11上
で同時に蒸着されるように、図15(B)に示すように
基板法線方向に対して僅かに傾斜して設置している。な
お、基板11は図15(A)においては紙面左側から右
側に、図15(B)においては紙面に対して奥側から手
前側に向かって移動する。また、蒸発源41および42
は図15(A、B)に示したように、所定の量の蒸発物
を収納する函体43と、函体43の開口部を覆う蓋4
4,45と、函体43の周囲に設けられた温度を制御す
るヒーター46とにより構成され、蓋44,45には所
定の大きさとした複数の孔47,48が設けられてい
る。第1蒸発源41の蓋44には、基板11が移動する
に従って径がしだいに小さくなる孔47aから47fが
設けられ、第2蒸発源42の蓋45には、基板11が移
動するに従って逆に径がしだいに大きくなる孔48aか
ら48fが設けられている。なお、これらの蒸発源は好
適にはカーボンにより形成されるが、窒化ボロン、アル
ミナ等のセラミックスや、Ti,Al,Cuなどの金属
により形成しても良い点は第3の実施形態と同一であ
る。また、図16に示すように孔47、48の間隔を徐
変するものとしても良い。
In the lower part of the second film forming chamber 22b, two long radiant heating type evaporation sources 41 and 42 are arranged in parallel so that the longitudinal direction is parallel to the substrate moving direction. 15B and the second evaporation source 42 are simultaneously vapor-deposited on the substrate 11, they are installed at a slight inclination with respect to the substrate normal direction. The substrate 11 moves from the left side to the right side of the paper in FIG. 15A, and from the back side to the front side of the paper in FIG. 15B. Also, evaporation sources 41 and 42
As shown in FIGS. 15A and 15B, is a box 43 that stores a predetermined amount of evaporated material, and a lid 4 that covers the opening of the box 43.
4, 45 and a heater 46 provided around the box 43 for controlling the temperature, and the lids 44, 45 are provided with a plurality of holes 47, 48 having a predetermined size. The lid 44 of the first evaporation source 41 is provided with holes 47a to 47f whose diameter gradually decreases as the substrate 11 moves, and the lid 45 of the second evaporation source 42 reversely moves as the substrate 11 moves. Holes 48a to 48f whose diameters gradually increase are provided. Although these evaporation sources are preferably formed of carbon, they may be formed of ceramics such as boron nitride and alumina, or metals such as Ti, Al, and Cu as in the third embodiment. is there. Further, as shown in FIG. 16, the distance between the holes 47 and 48 may be gradually changed.

【0034】本発明第4の実施形態の有機EL素子製造
装置は上記のような構成とされており、2つの蒸発源4
1,42から同時に有機材料を蒸着することで、搬送さ
れている基板11表面に傾斜有機層を再現性よく成膜す
ることができ得る。
The organic EL device manufacturing apparatus according to the fourth embodiment of the present invention is constructed as described above and has two evaporation sources 4.
By vapor depositing the organic material simultaneously from Nos. 1 and 42, it is possible to form the tilted organic layer on the surface of the substrate 11 being transported with good reproducibility.

【0035】ここで、成膜される傾斜有機層と蒸発源4
1,42との関係について説明する。蒸発源となる有機
化合物は蒸発源41,42の蓋44,45に設けられた
各孔47,48を通して基板11上に到達する。このと
き第1蒸発源41において、孔47aの飛散量に比べて
47fの飛散量は小さい。そのため、基板11上に到達
する蒸発物は基板11の移動に伴って低減する。逆に第
2蒸発源42においては孔48aの飛散量に比べて48
fの飛散量が大きいので、基板11上に到達する蒸発物
は基板11の移動に伴って増加する。蒸発源41,42
の取り付け角度、取り付け位置および孔47,48の間
隔と大きさ等を調整することにより、上述したような傾
斜構造の有機層を形成できる。また、蒸発源と基板まで
の距離を適宜離間することで基板上に形成される有機層
の均一性を向上させている。
Here, the inclined organic layer to be formed and the evaporation source 4
The relationship with 1, 42 will be described. The organic compound serving as the evaporation source reaches the substrate 11 through the holes 47 and 48 provided in the lids 44 and 45 of the evaporation sources 41 and 42. At this time, in the first evaporation source 41, the scattering amount of 47f is smaller than the scattering amount of the hole 47a. Therefore, the amount of vaporized material that reaches the substrate 11 decreases as the substrate 11 moves. On the contrary, in the second evaporation source 42, compared with the scattering amount of the holes 48a,
Since the scattering amount of f is large, the amount of vaporized substances reaching the substrate 11 increases as the substrate 11 moves. Evaporation sources 41, 42
By adjusting the mounting angle, the mounting position, the spacing and the size of the holes 47, 48, etc., the organic layer having the above-described inclined structure can be formed. Further, the uniformity of the organic layer formed on the substrate is improved by appropriately separating the distance between the evaporation source and the substrate.

【0036】このような蒸発源41,42を設けた成膜
室と一定方向に移動する基板11とを備えた有機EL素
子製造装置とすることで、作製しようとする傾斜構造の
有機EL素子を再現性よく、しかも簡単に作製すること
ができる。なお、本実施形態においても、蒸発源は2つ
以上を配置していてもよい。また、傾斜構造の有機層を
作製する成膜室も、同様に一つに限定されず複数設けら
れていてもよい。また、各蒸発源41,42は夫々一つ
の函体43に複数の孔47または孔48を設けた蓋4
4,45を被着するものとしているが、これに限らず、
例えば蒸発源41を各孔47a,47b,47c,47
d,47e,47fに対応した複数の個別に制御可能な
独立の蒸発源として、一列に並べたものを用いる等の分
割蒸発源を蒸発源として用いることもできる。
By using the organic EL element manufacturing apparatus provided with the film forming chamber provided with such evaporation sources 41 and 42 and the substrate 11 that moves in a fixed direction, the organic EL element having the inclined structure to be manufactured is obtained. It can be manufactured easily with good reproducibility. Also in this embodiment, two or more evaporation sources may be arranged. Further, similarly, the film forming chamber for forming the organic layer having the inclined structure is not limited to one, and a plurality of film forming chambers may be provided. Further, each evaporation source 41, 42 is a lid 4 in which one box 43 is provided with a plurality of holes 47 or holes 48, respectively.
It is supposed that 4,45 are attached, but not limited to this,
For example, the evaporation source 41 is connected to the holes 47a, 47b, 47c, 47.
As a plurality of individually controllable independent evaporation sources corresponding to d, 47e, and 47f, divided evaporation sources such as those arranged in a line may be used as the evaporation source.

【0037】また、第3および第4の実施形態において
も、第1および第2の実施形態のように位置調整可能な
仕切り板や、防着板、囲み板を設けることもでき得る。
基板11としては板材でもフィルムでも良く、ガラス、
プラスチック、など絶縁体に陽極として機能する薄膜を
形成させたものを用いることができる。蒸発方法は、加
熱蒸発(抵抗加熱、EB加熱)、スパッタ蒸発などいず
れでもよい。
Further, also in the third and fourth embodiments, it is possible to provide a partition plate whose position can be adjusted as in the first and second embodiments, an adhesion preventing plate and a surrounding plate.
The substrate 11 may be a plate material or a film, glass,
It is possible to use an insulating material such as plastic on which a thin film functioning as an anode is formed. The evaporation method may be heating evaporation (resistance heating, EB heating), sputter evaporation, or the like.

【0038】また、今までの説明は水平方向に基板が移
動するいわゆる横置きの装置の例を示したが、基板を縦
置きとした場合、基板を背中合わせにして2枚重ねて搬
送するものとし、その両側に成膜室を配置して側面から
蒸着材料を飛ばすものとしてもよい。これにより、2枚
の基板を同時に成膜できるようになり、1枚送りに比べ
て、処理能力を2倍にすることができる。
In the above description, an example of a so-called horizontal placement device in which the substrates move in the horizontal direction has been shown. However, when the substrates are placed vertically, the two substrates are stacked back to back and conveyed. Alternatively, the film forming chambers may be arranged on both sides of the film forming chamber and the vapor deposition material may be blown from the side surfaces. As a result, two substrates can be formed at the same time, and the processing capacity can be doubled as compared with single-sheet feeding.

【0039】傾斜有機層としてホール輸送性材料と電子
輸送性材料の各1種類を所定の濃度勾配を持つように作
製する例にて説明したが、これに限るものではなく、3
種類以上の材料を用いて傾斜有機層を形成するものとし
てもよい。さらに積層型有機EL素子において隣り合う
2層であれば、ほかの層との組み合わせにおいても作製
可能である。
An example in which one kind of hole transporting material and one kind of electron transporting material are produced as the graded organic layer so as to have a predetermined concentration gradient has been described, but the invention is not limited to this.
The graded organic layer may be formed using more than one kind of material. Further, in the laminated organic EL element, two adjacent layers can be manufactured in combination with other layers.

【0040】[0040]

【実施例】傾斜構造を持つ有機EL素子の作製装置の実
施例を以下に説明する。基板は200mm×200mmのIndium t
in oxide(ITO)付きガラスを用いた。作製した素子
の構造は、ホール注入層/傾斜構造層/電子注入層/陰
極層とした。装置は、図1のようなインライン装置を用
いて作製した。基板は第1成膜室2a側から入れ、速度
1.3 mm/sで搬送され、第4成膜室2d側から出す。
EXAMPLE An example of an apparatus for manufacturing an organic EL element having a tilted structure will be described below. Substrate is 200mm x 200mm Indium t
Glass with in oxide (ITO) was used. The structure of the manufactured device was hole injection layer / gradient structure layer / electron injection layer / cathode layer. The device was manufactured using an in-line device as shown in FIG. The substrate is put in from the first film forming chamber 2a side, and the speed is
It is conveyed at 1.3 mm / s and is ejected from the fourth film forming chamber 2d side.

【0041】第1成膜室2aで、銅フタロシアニンの薄
膜を作製し、ホール注入層を形成する。次に、第2成膜
室2bで、図7に示すような分子構造を持つホール輸送
性材料N,N’-di(1-naphthyl)-N,N’-diphenyl-[1,1’-b
iphenyl]-4,4’-diamine(α-NPD)と、図8に示す
電子輸送性材料(発光材料を兼ねる)tris(8-hydroxyqu
inoline)aluminum(Alq3)を用いて傾斜構造層を形
成する。第2成膜室2bの内部構造は図2のように成っ
ている。蒸発速度は、傾斜構造層の膜厚が2000Åと
なるように調整した。次に、第3成膜室2cでLi薄膜を
作製し、電子注入層形成した。最後に、第4成膜室2d
で陰極Alを成膜した。
In the first film forming chamber 2a, a thin film of copper phthalocyanine is formed and a hole injection layer is formed. Next, in the second film forming chamber 2b, the hole transporting material N, N'-di (1-naphthyl) -N, N'-diphenyl- [1,1'- having the molecular structure as shown in FIG. b
iphenyl] -4,4'-diamine (α-NPD) and the electron-transporting material (also serving as the light-emitting material) tris (8-hydroxyqu) shown in FIG.
The gradient structure layer is formed using inoline) aluminum (Alq3). The internal structure of the second film forming chamber 2b is as shown in FIG. The evaporation rate was adjusted so that the film thickness of the graded structure layer was 2000Å. Next, a Li thin film was formed in the third film forming chamber 2c to form an electron injection layer. Finally, the fourth film forming chamber 2d
Then, the cathode Al was formed into a film.

【0042】また、リファレンスとしてα-NPDを1
000Åと、Alq3を1000Åの厚みで順に積層し
た以外は同一の工程で成膜して有機EL素子を作製し
た。
As a reference, α-NPD is set to 1
000Å and Alq3 were formed in the same process except that Alq3 was sequentially laminated with a thickness of 1000Å to produce an organic EL device.

【0043】両素子のELスペクトルを図9に示す。こ
の図は実施例サンプルQ、および、リファレンスサンプ
ルRのいずれもがAlq3に基づく発光スペクトルを示
しており、基本的な発光特性において変わりのない傾斜
有機層を備えた有機EL素子10が得られている。
The EL spectra of both devices are shown in FIG. This figure shows emission spectra based on Alq3 for both the example sample Q and the reference sample R, and the organic EL element 10 provided with the tilted organic layer having no change in basic emission characteristics was obtained. There is.

【0044】[0044]

【発明の効果】効果1:従来法では、濃度勾配を形成さ
せるためには、蒸発速度を逐次変化させる制御が必要と
なる。一方、本発明では蒸発速度を一定に保ちながら、
基板を移動させることにより、濃度勾配を形成する。水
晶振動子での膜厚モニターによる蒸発速度制御は、蒸発
速度を一定時間保持する制御は容易であるが、蒸発速度
を逐次変化させる制御は、現技術では困難である。した
がって、本発明では濃度勾配パターンの再現性が高くな
るという効果がある。
EFFECT OF THE INVENTION Effect 1: In the conventional method, in order to form a concentration gradient, it is necessary to sequentially control the evaporation rate. On the other hand, in the present invention, while keeping the evaporation rate constant,
A concentration gradient is formed by moving the substrate. In the evaporation rate control by a film thickness monitor with a crystal oscillator, it is easy to control the evaporation rate to be maintained for a certain period of time, but it is difficult to control the evaporation rate to be changed successively with the current technology. Therefore, the present invention has the effect of increasing the reproducibility of the density gradient pattern.

【0045】効果2:従来のクラスター型蒸着装置は、
傾斜構造を持つ膜の膜厚を変更する場合、蒸発速度を時
間とともに変化させる条件、すなわち、初期速度、最終
速度、および、速度勾配、を決め直さなければならな
い。また、水晶振動子での膜厚モニターによる蒸発速度
制御のため、速度を逐次変化させる制御は困難である。
したがって、このような従来法では、生産レベルで膜厚
を変えることは困難である。一方、本発明では、設定し
た蒸発速度や基板の移動速度を変えるだけで膜厚を容易
に変えることができる。また、蒸発源の仕切り板の高さ
や蒸発源を変えれば、濃度勾配も容易に変えられる。
Effect 2: The conventional cluster type vapor deposition apparatus is
When changing the film thickness of a film having a graded structure, it is necessary to redetermine the conditions for changing the evaporation rate with time, that is, the initial speed, the final speed, and the speed gradient. Further, since the evaporation rate is controlled by the film thickness monitor of the crystal oscillator, it is difficult to control the rate to be changed successively.
Therefore, with such a conventional method, it is difficult to change the film thickness at the production level. On the other hand, in the present invention, the film thickness can be easily changed only by changing the set evaporation rate or the moving speed of the substrate. Further, the concentration gradient can be easily changed by changing the height of the partition plate of the evaporation source or the evaporation source.

【0046】効果3:従来は、膜厚の均一な膜を得るた
めに、基板を自転させていた。また、基板を交換する毎
に、搬送時間が必要であった。一方、本発明の方法を用
いると、インライン方式なので、搬送時間が大幅に短縮
され、基板の自転に要する時間も不要となる。したがっ
て、本発明には薄膜作製の処理能力が高くなるという効
果がある。
Effect 3: Conventionally, the substrate was rotated to obtain a film having a uniform film thickness. In addition, a transfer time is required every time the substrate is replaced. On the other hand, when the method of the present invention is used, since it is an in-line method, the transfer time is significantly shortened, and the time required for rotation of the substrate is also unnecessary. Therefore, the present invention has the effect of increasing the throughput of thin film production.

【0047】効果4:一般に、真空蒸着法を用いた場
合、蒸発した材料の内、基板に膜として使われる割合は
1割以下である。大部分の蒸発した材料は、真空容器の
内壁に付着してしまう。これは、蒸発方向に指向性が無
いためである。一方、本発明の加熱された板を蒸発源周
囲に置く方法を用いると、蒸発方向が制限できる。した
がって、本発明では蒸発材料の使用効率が高くなるとい
う効果がある。
Effect 4: Generally, when the vacuum evaporation method is used, the ratio of the evaporated material used as a film on the substrate is 10% or less. Most of the evaporated material adheres to the inner wall of the vacuum container. This is because there is no directivity in the evaporation direction. On the other hand, when the method of placing the heated plate around the evaporation source of the present invention is used, the evaporation direction can be limited. Therefore, the present invention has the effect of increasing the efficiency of use of the evaporation material.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明に係る有機エレクトロルミネッセンス
素子の製造装置および製造方法の実施形態を示す略示的
な断面図である。
FIG. 1 is a schematic cross-sectional view showing an embodiment of a manufacturing apparatus and a manufacturing method of an organic electroluminescence element according to the present invention.

【図2】 同じく本発明に係る製造装置および製造方法
の要部である傾斜構造層を形成するための成膜室を示す
略示的な断面図である。
FIG. 2 is a schematic cross-sectional view showing a film forming chamber for forming a graded structure layer which is a main part of the manufacturing apparatus and the manufacturing method according to the present invention.

【図3】 本発明により形成可能な傾斜構造層の例を示
すグラフである。
FIG. 3 is a graph showing an example of a graded structure layer that can be formed according to the present invention.

【図4】 傾斜構造層を形成するときの仕切板および防
着板の作用を示す説明図である。
FIG. 4 is an explanatory view showing the operation of the partition plate and the deposition preventive plate when forming the inclined structure layer.

【図5】 傾斜構造層を形成するための成膜室の別な実
施形態を示す説明図である。
FIG. 5 is an explanatory view showing another embodiment of a film forming chamber for forming a graded structure layer.

【図6】 傾斜構造層を形成するための成膜室の更に別
な実施形態を示す説明図である。
FIG. 6 is an explanatory view showing still another embodiment of a film forming chamber for forming a graded structure layer.

【図7】 実施例で用いた有機材料α−NPDの分子構
造を示す構造式である。
FIG. 7 is a structural formula showing a molecular structure of an organic material α-NPD used in Examples.

【図8】 実施例で用いた有機材料Alq3の分子構造
を示す構造式である。
FIG. 8 is a structural formula showing a molecular structure of an organic material Alq3 used in Examples.

【図9】 本発明に係る製造装置および製造方法により
形成された有機EL素子の発光スペクトルを示すグラフ
である。
FIG. 9 is a graph showing an emission spectrum of an organic EL element formed by the manufacturing apparatus and the manufacturing method according to the present invention.

【図10】 傾斜構造を有する有機EL素子の構成を示
す断面図である。
FIG. 10 is a cross-sectional view showing the structure of an organic EL element having a tilted structure.

【図11】 傾斜構造層の濃度勾配を示すグラフであ
る。
FIG. 11 is a graph showing a concentration gradient of a graded structure layer.

【図12】 本発明に係る有機エレクトロルミネッセン
ス素子の製造装置の他の実施形態を示す略示的な断面図
である。
FIG. 12 is a schematic cross-sectional view showing another embodiment of the apparatus for manufacturing an organic electroluminescence element according to the present invention.

【図13】 図12の製造装置および製造方法の要部で
ある傾斜構造層を形成するための成膜室を示す略示的な
断面図である。
13 is a schematic cross-sectional view showing a film forming chamber for forming a graded structure layer, which is a main part of the manufacturing apparatus and the manufacturing method of FIG.

【図14】 傾斜構造層を形成するための蒸発源の実施
形態を示す説明図である。
FIG. 14 is an explanatory diagram showing an embodiment of an evaporation source for forming a gradient structure layer.

【図15】 傾斜構造層を形成するための蒸発源の別の
実施形態を示す説明図である。
FIG. 15 is an explanatory diagram showing another embodiment of an evaporation source for forming a graded structure layer.

【図16】 図16の蒸発源を用いて傾斜構造層を形成
する製造装置及び製造方法の要部を示す説明図である。
16 is an explanatory diagram showing a main part of a manufacturing apparatus and a manufacturing method for forming a graded structure layer using the evaporation source of FIG.

【図17】 従来例の製造装置を示す説明図である。FIG. 17 is an explanatory diagram showing a manufacturing apparatus of a conventional example.

【図18】 従来例の製造装置の要部を示す説明図であ
る。
FIG. 18 is an explanatory diagram showing a main part of a manufacturing apparatus of a conventional example.

【符号の説明】[Explanation of symbols]

1,21……有機EL素子の製造装置 2,22……成膜室 3,30……蒸発源 4,34……ヒーター 5,25……仕切り板 6,26……排気装置 7,27……膜厚モニタ 8……防着板 9……囲み板 10……有機EL素子 11……基板 12……陽電極 13……有機層 14……陰電極 15……囲周板 2e……搬送室 28……ロードロック室 30……蒸発源 31……筒体 32……開口部 32a……スリット 32b……指向範囲制御部 33……収納部 34……ヒーター 41,42……蒸発源 43……函体 44,45……蓋 46……ヒーター 47,48……孔 1,21 ... Manufacturing equipment for organic EL devices 2, 22 ... Deposition chamber 3,30 ... Evaporation source 4,34 ... Heater 5,25 ... Partition board 6,26 ... Exhaust device 7, 27 ... Film thickness monitor 8 ... Protective plate 9 ... Enclosure 10 ... Organic EL element 11 ... Board 12 ... Positive electrode 13: Organic layer 14 ... Cathode 15 ... Surrounding plate 2e ... Transfer room 28 …… Road lock room 30 ... evaporation source 31 ... Cylinder 32 ... Opening 32a ... slit 32b ... Direction range control unit 33 ... Storage section 34 ... Heater 41, 42 ... Evaporation source 43 ... Box 44, 45 ... Lid 46 ... Heater 47, 48 ... holes

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 対向する陽極電極と陰極電極の間に少な
くとも1層の二種以上の有機化合物から構成され、混合
比が厚さ方向で異なる傾斜有機層を有する有機エレクト
ロルミネッセンス素子の製造方法であって、同一の真空
成膜室内に仕切り板を挟んで配置した複数の有機化合物
の蒸発源に対して相対的に基板を移動させること、およ
び/または同一の真空成膜室内における基板の相対的な
移動方向において蒸発量が異なる複数の蒸発源を備える
ことにより傾斜有機層を作製することを特徴とする有機
エレクトロルミネッセンス素子の製造方法。
1. A method for manufacturing an organic electroluminescent device, comprising an inclined organic layer composed of at least one layer of two or more kinds of organic compounds between opposing anode and cathode electrodes and having a mixing ratio different in the thickness direction. Therefore, the substrate is moved relative to the evaporation sources of a plurality of organic compounds arranged with a partition plate in the same vacuum film forming chamber, and / or the substrate is relatively moved in the same vacuum film forming chamber. Method for producing an organic electroluminescent device, characterized in that a tilted organic layer is produced by providing a plurality of evaporation sources having different evaporation amounts in different moving directions.
【請求項2】 キャリア輸送性の異なる二種以上の有機
化合物で上記傾斜有機層を構成することを特徴とする請
求項1記載の有機エレクトロルミネッセンス素子の製造
方法。
2. The method for producing an organic electroluminescence device according to claim 1, wherein the graded organic layer is composed of two or more kinds of organic compounds having different carrier transporting properties.
【請求項3】 第1電極および第2電極と、両電極間に
挟まれた複数の有機物化合物材料からなりその混合比が
厚さ方向で異なる傾斜有機層を含む有機化合物層を備
え、電極から注入した電流により有機化合物層から発光
する有機エレクトロルミネッセンス素子の製造装置であ
って、少なくとも仕切り板を挟んで配置した第1および
第2の蒸発源部と、蒸発源に対して相対的に移動可能な
基板とを備え、上記仕切り板は、第1の蒸発源から飛散
する第1蒸発材料の飛散路、および第2の蒸発源から飛
散する第2蒸発材料の飛散路の双方の飛散路が重なる領
域に突出する長さで、且つ、第1および第2の蒸発材料
の双方が基板に到達可能な長さを有し、上記第1の蒸発
源および第2の蒸発源から基板上に同時に有機材料を飛
散させて、基板表面に第1の蒸発材料および第2の蒸発
材料の混合比が厚さ方向で異なる傾斜有機層を作製でき
る有機エレクトロルミネッセンス素子の製造装置。
3. An organic compound layer including a first electrode and a second electrode, and a plurality of organic compound materials sandwiched between the electrodes, and an organic compound layer including a tilted organic layer having different mixing ratios in the thickness direction. An apparatus for manufacturing an organic electroluminescence element which emits light from an organic compound layer by an injected current, which is movable relative to an evaporation source and first and second evaporation source parts arranged at least with a partition plate in between. The partition plate overlaps with both the scattering paths of the first evaporation material scattered from the first evaporation source and the scattering paths of the second evaporation material scattered from the second evaporation source. A length that protrudes into the region and has such a length that both the first and second evaporation materials can reach the substrate, and the organic materials are simultaneously formed on the substrate from the first evaporation source and the second evaporation source. Scatter the material to the substrate surface An apparatus for manufacturing an organic electroluminescence device, which can produce a tilted organic layer in which a mixing ratio of a first evaporation material and a second evaporation material is different in a thickness direction.
【請求項4】 第1電極および第2電極と、両電極間に
挟まれた複数の有機物化合物材料からなりその混合比が
厚さ方向で異なる傾斜有機層を含む有機化合物層を備
え、電極から注入した電流により有機化合物層から発光
する有機エレクトロルミネッセンス素子の製造装置であ
って、蒸着物出射口となる孔と蒸発源側から基板側に向
かって該孔の周囲から拡開している指向範囲制御部とを
備えた少なくとも2つの蒸発源と、蒸発源に対して相対
的に移動可能な基板とを備え、上記蒸発源は、第1の蒸
発源から飛散する第1蒸発材料の飛散路、および第2の
蒸発源から飛散する第2蒸発材料の飛散路の双方の飛散
路が重なっており、上記第1の蒸発源および第2の蒸発
源から基板上に同時に有機材料を飛散させて、基板表面
に第1の蒸発材料および第2の蒸発材料の混合比が厚さ
方向で異なる傾斜有機層を作製できる有機エレクトロル
ミネッセンス素子の製造装置。
4. An organic compound layer including a first electrode and a second electrode, and a plurality of organic compound materials sandwiched between the electrodes, and an organic compound layer including a tilted organic layer having different mixing ratios in the thickness direction. A device for manufacturing an organic electroluminescence element that emits light from an organic compound layer by an injected current, wherein a hole serving as a vapor deposit outlet and a pointing range expanding from the periphery of the hole from the evaporation source side toward the substrate side. At least two evaporation sources each having a control unit, and a substrate movable relative to the evaporation sources, wherein the evaporation source is a scattering path of the first evaporation material scattered from the first evaporation source, And both of the scattering paths of the second evaporation material scattered from the second evaporation source are overlapped, and the organic material is simultaneously scattered on the substrate from the first evaporation source and the second evaporation source, The first evaporation material and the And an apparatus for manufacturing an organic electroluminescence device capable of producing a graded organic layer in which the mixing ratio of the second evaporation material differs in the thickness direction.
【請求項5】 第1電極および第2電極と、両電極間に
挟まれた複数の有機物化合物材料からなりその混合比が
厚さ方向で異なる傾斜有機層を含む有機化合物層を備
え、電極から注入した電流により有機化合物層から発光
する有機エレクトロルミネッセンス素子の製造装置であ
って、蒸着物出射口となる複数の孔を備えた少なくとも
2つの蒸発源と、蒸発源に対して相対的に移動可能な基
板とを備え、上記蒸発源は、第1の蒸発源から飛散する
第1蒸発材料の飛散路、および第2の蒸発源から飛散す
る第2蒸発材料の飛散路の双方の飛散路が重なり、且
つ、各蒸発源に設けられている複数の孔は上記基板の移
動方向と略平行に並設されていると共に、少なくとも一
つの孔の大きさが他の孔の大きさと異なっており、上記
第1の蒸発源および第2の蒸発源から基板上に同時に有
機材料を飛散させて、基板表面に第1の蒸発材料および
第2の蒸発材料の混合比が厚さ方向で異なる傾斜有機層
を作製できる有機エレクトロルミネッセンス素子の製造
装置。
5. An organic compound layer including a first electrode and a second electrode, and a plurality of organic compound materials sandwiched between the electrodes, and an organic compound layer including a tilted organic layer having different mixing ratios in the thickness direction. An apparatus for manufacturing an organic electroluminescence device, which emits light from an organic compound layer by an injected current, wherein at least two evaporation sources having a plurality of holes serving as vapor deposit emission ports and movable relative to the evaporation sources. The evaporation source, the evaporation paths of the first evaporation material scattered from the first evaporation source and the scattering paths of the second evaporation material scattered from the second evaporation source are overlapped with each other. And, the plurality of holes provided in each evaporation source are arranged in parallel substantially in parallel with the moving direction of the substrate, and the size of at least one hole is different from the size of the other holes. First evaporation source and second Of an organic electroluminescence device capable of producing an inclined organic layer in which the mixing ratio of the first evaporating material and the second evaporating material is different in the thickness direction by simultaneously scattering the organic material from the evaporation source on the substrate. apparatus.
【請求項6】 上記第1の蒸発源部、第2の蒸発源部お
よび仕切り板の周囲を囲み、加熱制御可能な囲み板が設
置されていることを特徴とする請求項3から請求項5の
何れかに記載の有機エレクトロルミネッセンス素子の製
造装置。
6. The surrounding plate of the first evaporation source part, the second evaporation source part and the partition plate is provided with a heating controllable surrounding plate. An apparatus for manufacturing an organic electroluminescence element according to any one of 1.
JP2002178461A 2001-06-22 2002-06-19 Method and device for manufacturing organic electroluminescent element Pending JP2003077662A (en)

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