JP2003077662A - Method and device for manufacturing organic electroluminescent element - Google Patents

Method and device for manufacturing organic electroluminescent element

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JP2003077662A
JP2003077662A JP2002178461A JP2002178461A JP2003077662A JP 2003077662 A JP2003077662 A JP 2003077662A JP 2002178461 A JP2002178461 A JP 2002178461A JP 2002178461 A JP2002178461 A JP 2002178461A JP 2003077662 A JP2003077662 A JP 2003077662A
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evaporation
organic
evaporation source
substrate
material
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Junji Kido
淳二 城戸
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Junji Kido
淳二 城戸
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/548Controlling the composition

Abstract

PROBLEM TO BE SOLVED: To solve problems in a conventional manufacturing device that accurate control of a component ratio changing in the direction of thickness of a film is difficult and production of uniform products is impossible because, for example, a difference in light emitting colors occurs in each product. SOLUTION: A manufacturing method for an organic electroluminescent element having an inclined organic layer composed of a plurality of organic compounds of at least one layer between opposing anode electrode and cathode electrode and having different mixture ratios in the direction of thickness is provided to manufacture the inclined organic layer by moving a substrate 11 relatively for a plurality of evaporation sources 3 of the organic compound arranged across a partition plate 5 in the same vacuum film formation chamber 2. Moreover, a manufacturing device 1 for the organic electroluminescent element is provided to enable accurate control of a component ratio.

Description

【発明の詳細な説明】 【0001】 【発明の属する技術分野】本発明は有機エレクトロルミネッセンスデバイス(以後、有機EL素子と略称する) BACKGROUND OF THE INVENTION [0001] [Technical Field of the Invention The present invention is an organic electroluminescent device (hereinafter abbreviated as organic EL device)
における有機層の製造方法および製造装置に関するものである。 A manufacturing method and a manufacturing apparatus of an organic layer in. 【0002】 【従来の技術】一般に、低分子材料を用いた有機EL素子は電極間に有機薄膜層を挟んだ構造である。 [0002] In general, the organic EL device using a low molecular material has a structure sandwiching the organic thin film layer between the electrodes. これまで、この有機層の構造として幾つか提案されている。 Previously, it has been several proposed structure of the organic layer. 代表的なものはITO(Indium tin oxide)からなる陽極を形成したガラス基板上に真空蒸着法にてホール輸送性材料層を蒸着し、その後、同じ真空装置内にて蒸発源をホール輸送性材料から電子輸送性材料に変え、電子輸送性材料層を蒸着して積層構造の有機層を形成する。 Typical ones depositing a hole transporting material layer by vacuum deposition on a glass substrate provided with the anode made of ITO (Indium tin oxide), then the hole-transporting material evaporation sources at the same vacuum apparatus It changed to an electron transporting material from forming an organic layer of the multilayer structure by depositing an electron-transporting material layer. 次に低仕事関数の金属材料からなる陰極を形成した有機EL Then formed organic EL cathode made of a metal material having a low work function
素子があり、電極から電荷を注入すると有機層から発光が得られる。 There are elements, emitted from the organic layer is obtained when injecting charges from the electrode. 【0003】また、有機層における積層構造の界面をなくすべく上記各層の有機材料を混ぜて、成分の濃度勾配をもたせた構造(以降、傾斜構造という)の提案がある。 [0003] Mix the organic material of the layers to eliminate the interface of the laminated structure in the organic layer, there is proposed a structure in which remembering concentration gradient of component (hereinafter, referred to as gradient structure). たとえば、US-PAT5853905,US-PAT5925980,US-PAT61 For example, US-PAT5853905, US-PAT5925980, US-PAT61
14055,US-PAT6130001,特開2001-23776には傾斜構造を備えた有機EL素子10(図10参照)が記載されている。 14055, US-PAT6130001, the JP 2001-23776 described organic EL device 10 having a graded structure (see FIG. 10). 【0004】これらの特許において、濃度勾配を持たせた層(以後、傾斜有機層という)は、ホール輸送性材料と電子輸送性材料との混合比を厚み方向において変化させている。 [0004] In these patents, the layer which gave a concentration gradient (hereinafter, referred to as tilt organic layer) is varied in the thickness direction of a mixing ratio of the hole transporting material and electron transporting material. 例えば、特開2001-23776によると、図10に示すように、ガラスなどの基板11上に敷設された陽電極12と、陰電極14との間に挟まれる有機層13が傾斜有機層のみからなる単層構造であり、典型的には図1 For example, according to JP 2001-23776, as shown in FIG. 10, the positive electrode 12 laid on the substrate 11 such as glass, organic layer 13 only tilt organic layer sandwiched between the cathode 14 comprising a single layer structure, typically 1
1のような濃度勾配を有しており、傾斜有機層から発光が生じている。 Has a concentration gradient such as 1, light emission is caused from the inclined organic layer. 【0005】また、これらの傾斜構造を備えた有機EL Further, the organic EL having these gradient structure
素子10を作製するには、従来は図17のように基板挿入室91、複数の成膜室92、および基板取り出し室9 To produce a device 10, the substrate insertion chamber 91 as in the prior art FIG. 17, a plurality of film forming chambers 92, and the substrate was taken out chamber 9
3と、異なる室間で基板を移動させるための搬送アーム99を中央に備えた装置を用いて作製する。 3, produced using a device with a transfer arm 99 for moving the substrate between different chambers in the center. 傾斜有機層は、図18のような基板回転機構95を備えた成膜室9 Tilt organic layer deposition chamber with a substrate rotating mechanism 95 as shown in FIG. 18 9
2内に複数の蒸発源94を備えた製造装置90を用いて作製する。 It is manufactured by using the manufacturing apparatus 90 having a plurality of evaporation sources 94 in 2. たとえば、陽電極12となる薄膜の形成された基板11を製造装置90にセットし、自転させる。 For example, setting the substrate 11 formed of a thin film made of a positive electrode 12 in the manufacturing apparatus 90, thereby rotating. 次に、真空蒸着法により基板11上に有機層13の薄膜を作製する。 Next, a thin film of the organic layer 13 on the substrate 11 by vacuum evaporation. 各蒸発ルツボ94a,94bにはそれぞれホール輸送性材料と電子輸送性材料が充填されている。 Each evaporation crucible 94a, the hole transporting material and electron transporting material, respectively are filled with 94b. 濃度勾配をつけるために、電子輸送性材料は時間の経過とともに蒸発速度が速くなるようにヒーター96bなどを制御し、ホール輸送性材料は時間の経過とともに蒸発速度が遅くなるようにヒーター96aなどを制御して各々の材料を同時に蒸着する。 To give a concentration gradient, an electron transporting material and controls the heater 96b so that the evaporation speed increases with time, and heater 96a as hole transporting material evaporation rate decreases with time control simultaneously depositing each material. なお、蒸発速度の制御は、水晶振動子を用いた膜厚モニター97a、97bを用いて行う。 The control of the evaporation rate, film thickness monitor 97a using a quartz oscillator, carried out using 97b. 尚、図中に符号98で示すものは排気装置である。 Incidentally, those indicated by reference numeral 98 in the figure is an exhaust system. 【0006】 【発明が解決しようとする課題】しかしながら、このような装置を用いて傾斜構造を備えた有機EL素子を作製する場合には、次のような問題点があった。 [0006] The present Invention is to Solve However, in the case of manufacturing the organic EL device having a tilt structure by using such a device has the following problems. 【0007】問題点1:膜の厚み方向に変化する2つの成分比を制御する必要があるため、再現性が悪く、可変の蒸発速度制御が困難である。 [0007] Problem 1: since the film is required to control the two component ratio which varies in the thickness direction of, poor reproducibility, it is difficult to variable evaporation speed control. 問題点2:膜厚を変更する場合、経時変化する蒸発速度の条件出しに多くの時間が必要となる。 Problem 2: when changing the film thickness, much time is required for condition determination of the evaporation rate of change over time. 問題点3:膜面方向に成分比を均一にするために、基板を回転させるための機構が必要となり、成膜時間以外に、回転、および、基板交換の時間が必要である。 Problem 3: In order to obtain a uniform component ratio in the film plane direction, a mechanism for rotating the substrate is required, in addition to deposition hours, rotating, and, time is required for the substrate exchange. 【0008】本発明は、以上のような問題点を解決すべく、比較的簡単な構成の装置により、安定して傾斜構造を備えた有機EL素子を作製できる方法および製造装置を提供すること目的としている。 [0008] The present invention is to solve the problems described above, a relatively simple construction of the device, object of the present invention to provide a method and a manufacturing apparatus can be fabricated organic EL device having a stable gradient structure It is set to. 【0009】 【課題を解決するための手段】本発明は、対向する陽極電極と陰極電極の間に少なくとも1層の複数の有機化合物から構成され、混合比が厚さ方向で異なる傾斜有機層を有する有機エレクトロルミネッセンス素子の製造方法であって、同一の真空成膜室内に仕切り板を挟んで配置した複数の有機化合物の蒸発源に対して相対的に基板を移動させること、および/または同一の真空成膜室内における基板の相対的な移動方向において蒸発量が異なる複数の蒸発源を備えることにより傾斜有機層を作製することを特徴とする有機エレクトロルミネッセンス素子の製造方法および製造装置等を提供することで、いわゆる傾斜有機層を備えた有機EL素子を安定して作製することができる。 [0009] SUMMARY OF THE INVENTION The present invention is comprised of a plurality of organic compound of at least one layer between the opposing anode and cathode electrodes, gradient organic layer mixing ratios are different in the thickness direction of the a manufacturing method of an organic electroluminescence element having, moving relatively the substrate relative to the evaporation source of a plurality of organic compound disposed across the partition plate in the same vacuum deposition chamber, and / or identical to provide a manufacturing method and a manufacturing apparatus of an organic electroluminescent device characterized by producing a tilting organic layer by providing a plurality of evaporation sources amount evaporation differ in the relative moving direction of the substrate in the vacuum deposition chamber it is, an organic EL device having a so-called tilt organic layer can be produced stably. 【0010】 【発明の実施の形態】以下、この発明の好適な実施形態を図1から図5を参照しながら、詳細に説明する。 DETAILED DESCRIPTION OF THE INVENTION Hereinafter, with reference to FIG. 5 a preferred embodiment of the present invention from FIG. 1, will be described in detail. 図1 Figure 1
は本発明による好適な傾斜型構造の有機EL素子10 The organic EL device of the preferred inclined type structure according to the invention 10
(図10を参照)の製造装置1の一実施形態を示す。 It shows an embodiment of a manufacturing apparatus 1 (see FIG. 10). 本発明において傾斜型構造の有機EL素子10は、いわゆるインライン方式の真空成膜装置を用いて作製する。 Organic EL elements 10 of the inclined structure in the present invention is fabricated using a vacuum deposition apparatus of a so-called in-line system. インライン方式の真空成膜装置は、一定速度で基板11が移動する機能を有し、複数の成膜室2により構成されている。 Vacuum deposition apparatus of an inline type has a function of substrate 11 moves at a constant speed, and is composed of a plurality of the film forming chamber 2. 少なくとも成膜室の1室は、蒸発源3が2つ以上あり、蒸発源3の間に濃度勾配を制御するための仕切り板5が置かれた真空蒸着装置により構成される。 The first chamber of at least the deposition chamber, there evaporation source 3 is two or more, formed by a vacuum vapor deposition apparatus partition plate 5 is placed to control the concentration gradient between the evaporation source 3. 【0011】図面において符号11は基板で、図面左から右方向に向かって所定の速度で移動する。 [0011] reference numeral 11 in the drawing to move the substrate, from the drawings the left to right direction at a predetermined speed. 図では第1 In the figure the first
成膜室2aから第4成膜室2dまでの4つの成膜室を備えた例を示し、各成膜室2(a〜d)の上部に基板11 An example with four film forming chamber from the film forming chamber 2a to fourth deposition chamber 2d, the substrate 11 on top of the respective film forming chambers 2 (to d)
が搬送される搬送室2eが設けられている。 Transfer chamber 2e is provided but is transported. また、これらの空間2a〜2eは全て真空状態としている。 Moreover, all these spaces 2a~2e has a vacuum state. 【0012】各成膜室2(a〜d)には蒸発源3を備えており、搬送されてくる基板11表面に成膜する。 [0012] The respective film forming chambers 2 (to d) comprises the evaporation source 3, it is deposited on the conveyed substrate 11 surface. 蒸発源3は、有機EL素子の構造によって異なり、例えば第1成膜室2aにてホール注入層、第2成膜室2bにおいて傾斜有機層、第3成膜室2cにおいて第1陰極材料、 Evaporation source 3 is different depending on the structure of the organic EL element, for example a hole injection layer in the first film forming chamber 2a, tilt organic layer in the second film forming chamber 2b, the first cathode material in the third film forming chamber 2c,
第4成膜室2dにおいて第2陰極材料をそれぞれ成膜する。 Respectively forming the second cathode material in the fourth deposition chamber 2d. 各成膜室において成膜する材料および成膜室の数は、作製しようとする有機EL素子構造に応じて適宜選択する。 The number of the material and the deposition chamber for forming the respective film forming chambers, properly selected depending on the organic EL device structure to be produced. 【0013】図2は傾斜有機層を成膜する第2成膜室2 A second film forming chamber 2 forming an inclined organic layer 2
bの概略図である。 b is a schematic diagram of a. 第2成膜室2bの下部には、2つのルツボなど蒸発源3a,3bと、蒸発源3(a,b)の間に配置した仕切り板5が設置されており、ルツボ蒸発源の周りには各ルツボ蒸発源の温度を制御するヒーター4a,4bが設けてある。 At the bottom of the second film forming chamber 2b, the evaporation source 3a including two crucibles, and 3b, is installed a partition plate 5 disposed between the evaporation source 3 (a, b), around the crucible evaporation source a heater 4a that controls the temperature of each crucible evaporation source, 4b are provided. なお、6は排気ポンプで、バルブを通して成膜室内の圧力を所定値に制御可能なものとしている。 Incidentally, 6 an exhaust pump, the pressure in the film forming chamber is assumed controllable to a predetermined value through the valve. 【0014】本発明第1の実施形態の有機EL素子製造装置は上記のような構成とされており、2つのルツボ蒸発源3a,3bから同時に有機材料を蒸着することで、 [0014] The organic EL device manufacturing apparatus of the present invention the first embodiment is configured as described above, that the two crucibles evaporation sources 3a, simultaneously organic material from 3b deposited,
搬送されている基板11表面に傾斜有機層を再現性よく成膜することができる。 It can be reproducibly deposited inclination organic layer transported by that the substrate 11 surface. 【0015】ここで、成膜される傾斜有機層と仕切り板5との関係について説明する。 [0015] Here, a description will be given of the relationship between the inclined organic layer and the partition plate 5 to be formed. 仕切り板5の高さの調整により、図3のような3種類(タイプ1、2、3)の傾斜構造を形成できる。 By adjusting the height of the partition plate 5, it can form an inclined structure of three as shown in FIG. 3 (type 1, 2 and 3). タイプ1、タイプ2、および、タイプ3は、それぞれ図4A、4B、および4Cのような仕切り板5を蒸発源の間に設置することにより形成できる。 Type 1, Type 2, and Type 3 can be formed by placing each view 4A, 4B, and the partition plate 5, such as 4C between the evaporation source. 尚、図2中に符号7(a,b)で示すものは膜厚モニタであり、図4中に符号Zで示すものは仕切り板5の高さに応じて変化する成分混合の境界線である。 Reference numeral 7 (a, b) in FIG. 2 shows in a film thickness monitor, a component mixing border as indicated by reference numeral Z changes according to the height of the partition plate 5 in FIG. 4 is there. 【0016】また、たとえば、タイプ2の傾斜構造を形成する装置である図4Bにおいて、防着板8の開口面積を小さくすることにより、タイプ1の傾斜構造を形成できる。 Further, for example, in FIG. 4B is a device for forming a gradient structure of the type 2, by reducing the opening area of ​​the deposition preventing plate 8 can form a slope structure of the type 1. 膜厚の制御は、蒸発速度および基板11の搬送速度を制御することにより容易に行うことができる。 Control of the film thickness can be easily performed by controlling the transport speed of the evaporation rate and the substrate 11. 【0017】このような仕切り板5を設けた成膜室と一定方向に移動する基板11とを備えた有機EL素子製造装置1とすることで、作製しようとする傾斜構造の有機EL素子を再現性よく、しかも簡単に作製することができる。 [0017] With the organic EL element manufacturing apparatus 1 that includes a substrate 11 that moves the film forming chamber provided with such a partition plate 5 in a predetermined direction, reproducing the organic EL element of the inclined structure to be produced sexual well, yet it can be easily manufactured. 特に、仕切り板5の長さ(仕切り板と基板との距離)、防着板8の開口面積に応じて、蒸発源3の一定蒸発速度と基板11の搬送速度を制御することで、様々な傾斜構造の有機EL素子を得ることができる。 In particular, (the distance between the partition plate and the substrate) length of the partition plate 5, in accordance with the opening area of ​​the deposition preventing plate 8, by controlling the transport speed of the constant evaporation rate and the substrate 11 of the evaporation source 3, a variety of it is possible to obtain an organic EL device of the gradient structure. 【0018】なお、本実施形態において、蒸発源3はルツボに限らず点蒸発源、線蒸発源、面蒸発源のいずれでもよい。 [0018] In the present embodiment, the evaporation source 3 point evaporation source is not limited to the crucible, the line evaporation source may be any of surface evaporation source. また、蒸発源部の仕切り板5で仕切られた領域(図面右側または左側)に置く蒸発源は、1つに限定されず、2つ以上の蒸発源が配置されていてもよい。 Further, the evaporation source placed partitioned by the partition plate 5 of the evaporation source area (drawing left or right side) is not limited to one, two or more evaporation sources may be disposed. また、1つの成膜室内において蒸発源部の仕切り板5で仕切られた領域は、2つの領域に限定されず、3つ以上の領域に仕切られていてもよい。 A region partitioned by the partition plate 5 of the evaporation source portion in one film forming chamber is not limited to two regions, it may be divided into three or more regions. たとえば、3つの領域に仕切られた成膜室の場合には、図5(A)のような配置となる。 For example, in the case of a deposition chamber which is partitioned into three regions, the arrangement shown in FIG. 5 (A). 更に言えば、仕切り板5の形状は板状に限らず、例えば図5(B)に示すように蒸発源部の周囲を略筒状に囲む形状とした囲周板15としても良い。 More, the shape of the partition plate 5 is not limited to the plate shape, it may be encircled plate 15 has a shape which surrounds example the periphery of the evaporation source unit as shown in FIG. 5 (B) in a substantially tubular shape. 【0019】次に別の実施形態について説明する。 [0019] Next, another embodiment of the present invention will be described. なお、先の実施形態と同一の機能を有する箇所は同一の符号を付し詳細な説明を省略する。 Incidentally, portions having the above embodiments same functions will be omitted subjected detailed description the same reference numerals. この実施形態においては、先の蒸発源部の周囲に図6のような加熱した蒸発源3を囲む囲み板9を備えている。 In this embodiment includes a shroud 9 surrounds the periphery of the previous evaporation source unit evaporation source 3 heated as in FIG. 6. 囲み板9は、蒸発源3 Enclose plate 9, the evaporation source 3
a,3bの周囲を囲む円筒状のステンレスなどの金属や、セラミック材料からなる板で、蒸発源3から適宜の距離を離して設置する。 a, metal or the like cylindrical stainless surrounding the 3b, a plate made of a ceramic material, is placed away an appropriate distance from the evaporation source 3. また、該囲み板9は図示しない温度制御装置により所定の温度に制御可能なものとしている。 Further, it is assumed controllable to a predetermined temperature by 該囲 see plate 9 not shown temperature control unit. 【0020】蒸発源から蒸発した有機材料は、成膜室2 [0020] The organic material evaporated from the evaporation source, the film-forming chamber 2
内においてほぼ放射状に広がって飛んで、基板11等に付着する。 Fly spreads substantially radially at an inner, attached to the substrate 11 or the like. その際、上記囲み板9をその飛散路内で、かつ、基板への蒸着の妨げとならない位置、例えば、真空装置の壁面に向かって飛ぶ飛散路を覆う見込み角度を覆う領域に設置すると、蒸発源3から飛んできた有機材料の一部は上記囲み板9にも付着する。 At that time, the shroud 9 with the scattering path, and a position that does not interfere with the deposition on the substrate, for example, when installed in a region covering the estimated angle that covers the scattering path to fly toward the wall surface of the vacuum apparatus, evaporated some of the organic material flew from the source 3 adheres to the shroud 9. 【0021】このとき、囲み板9の温度を高温に制御すると、この囲み板9に付着した有機材料が再蒸発して基板11に付着するので、材料の使用効率が著しく向上する。 [0021] At this time, by controlling the temperature of the shroud 9 to a high temperature, the organic material adhering to the shroud 9 is attached to the substrate 11 and then re-evaporated, the material utilization efficiency is remarkably improved. さらに真空成膜室の壁面に付着する利用されない有機材料の絶対量が減少する。 Furthermore the absolute amount of organic material that is not available to adhere to the wall surface of the vacuum deposition chamber is reduced. このことは壁面に付着して、微粒子ゴミの発生原因となる有機材料が低減されるので、微粒子ゴミが基板11に付着することに起因する不良発生を効果的に予防することになり歩留まり向上と低コスト化をはかることができる。 This is attached to the wall surface, since the organic material to be cause of fine dust is reduced, and yield improvement will be fine dust is effectively prevent occurrence of defects due to adhering to the substrate 11 it is possible to reduce the cost. 【0022】なお、前記囲み板9の温度は、蒸発材料の沸点、または、昇華点より高く、使用する材料が変性する温度より低い温度に制御すれば良い。 [0022] The temperature of the shroud 9 has a boiling point of the evaporation material, or higher than the sublimation point, the material may be controlled to lower than the temperature for denaturing temperatures employed. 蒸発材料は、一般に有機EL素子に使用されている材料全般のいずれも用いることができ、積層構造、単層構造、傾斜構造の有機層のいずれを成膜する有機材料にも適用できる。 Evaporation materials generally can be used any material in general used in an organic EL element, the laminated structure, a single-layer structure can be applied both to organic material forming the organic layer of gradient structure. 【0023】次に、第3の実施形態について説明する。 Next, a third embodiment will be described.
なお、先の実施形態と同一の機能を有する箇所は同一の符号を付し詳細な説明を省略する。 Incidentally, portions having the above embodiments same functions will be omitted subjected detailed description the same reference numerals. 上述した実施形態においては同一の真空成膜室内に仕切り板を挟んで配置した複数の有機化合物の蒸発源に対して相対的に基板を移動させることにより傾斜有機層を作製しているが、本実施形態においては、蒸発源からの蒸発物の飛び出し方向に指向性を与えることにより、傾斜有機層を作製している。 While to produce a gradient organic layer by moving relatively the substrate relative to the evaporation source of a plurality of organic compound disposed across the partition plate in the same vacuum deposition chamber in the above embodiment, the present in embodiments, by providing directivity in the direction flying out of evaporant from the evaporation source, and producing a slope organic layer. 【0024】図12は本発明による好適な傾斜型構造の有機EL素子10(図10を参照)の製造装置の一実施形態を示す。 [0024] Figure 12 shows an embodiment of a manufacturing apparatus of an organic EL device 10 of the preferred inclined structure according to the present invention (see Figure 10). 本実施形態においても傾斜型構造の有機E Organic E also inclined structure in the present embodiment
L素子10をいわゆるインライン方式の真空成膜装置2 Vacuum film forming apparatus 2 in a so-called in-line system the L element 10
1を用いて作製する。 It made using 1. 一定速度で基板11が移動する機能を有し、複数の蒸発源30を有する成膜室22と、排気装置26により構成されている。 Has a function of substrate 11 moves at a constant speed, the film forming chamber 22 having a plurality of evaporation sources 30 is constituted by an exhaust device 26. また、成膜室の前後にロードロック室28a、28bが設けられている。 In addition, the load lock chamber 28a, 28b is provided on the front and back of the deposition chamber. 蒸発源30は飛び出し方向に指向性を持って蒸発物が飛散すると共に、少なくとも2つの蒸発源からの蒸発物が基板11上に同時に成膜するものとされている。 Evaporation source 30 with the evaporant with directivity in the direction popping is scattered, vaporization of at least two evaporation sources are assumed to be simultaneously deposited on the substrate 11. 【0025】図面において符号11は基板で、図面左から右方向に向かって所定の速度で移動する。 The reference numeral 11 in the drawing to move the substrate, from the drawings the left to right direction at a predetermined speed. 図ではロードロック室28a、成膜室22およびロードロック室2 The load lock chamber 28a in the figure, the deposition chamber 22 and the load lock chamber 2
8bの上部に基板11が搬送される搬送室などが設けられている。 Such a transfer chamber substrate 11 is conveyed to the top of 8b are provided. また、成膜室22は図では仕切り板25 Further, the partition plate 25 in the film forming chamber 22 the figure
(a,b)により第1成膜室22a、第2成膜室22b (A, b) the first film forming chamber 22a, the second film forming chamber 22b
および第3成膜室22dの3つの成膜室を備えた例を示している。 And it illustrates an example with three film forming chambers of the third film forming chamber 22d. なお、これらの空間は排気装置26により全て真空状態としている。 Incidentally, these spaces are all vacuum exhaust system 26. 【0026】図では成膜室22に第1蒸発源30aから第4蒸発源30dまでの4つの蒸発源30(a,b, The four evaporation sources 30 in the Figure from the first evaporation source 30a into the film forming 22 to fourth evaporation source 30d (a, b,
c,d)を備えており、搬送されてくる基板11表面に成膜する。 c, comprises a d), the deposited the conveyed substrate 11 surface. 各蒸発源30は、有機EL素子の構造によって蒸発範囲が異なる。 Each evaporation source 30, is different evaporation scope by the structure of the organic EL element. 例えば第1成膜室22aでは蒸発源30aによりホール注入層、第2成膜室22bでは蒸発源30bおよび蒸発源30cにより傾斜有機層、第3 For example the hole injection layer by the first film forming chamber 22a at the evaporation source 30a, inclined organic layer by the second film forming chamber 22b in the evaporation source 30b and the evaporation source 30c, the third
成膜室22dでは蒸発源30dにより陰極材料をそれぞれ成膜する。 Each depositing the cathode material by the film-forming chamber 22d in the evaporation source 30d. 各成膜室において成膜する材料、蒸発源の数および成膜室の数は、作製しようとする有機EL素子構造に応じて適宜選択する。 Materials deposited in each deposition chamber, the number of the number and the deposition chamber of the evaporation source is appropriately selected according to the organic EL device structure to be produced. 【0027】図13は傾斜有機層を成膜する第2成膜室22bの概略図である。 [0027] FIG. 13 is a schematic view of a second film forming chamber 22b for forming the inclined organic layer. 第2成膜室22bの下部には、 At the bottom of the second film forming chamber 22b,
2つの蒸発源30b,30cが所定の照射範囲となるように指向性を持って蒸発物を飛散可能となるように所定の角度に設置しており、各蒸発源の周りには蒸発源の温度を制御するヒーター34b,34cが設けてある。 Two evaporation sources 30b, 30c are installed at a predetermined angle so as to be scattered evaporant with directivity so as to have a predetermined irradiation range, the temperature of the evaporation source around each evaporation source heater 34b for controlling, 34c are provided. なお、26は排気ポンプで、バルブを通して成膜室内の圧力を所定値に制御可能なものとしている。 Incidentally, 26 is an exhaust pump, the pressure in the film forming chamber is assumed controllable to a predetermined value through the valve. また、蒸発源30は図14に示すように筒体31と、筒体31の下方内部に蒸発物を交換可能にセットする収納部33と、所定の量の蒸発物を飛散可能な所定の大きさとした細長矩形のスリット32a及び所定の角度αでスリット32a Further, the evaporation source 30 and the tubular body 31 as shown in FIG. 14, a holding section 33 for setting interchangeably evaporant downward inside the tubular body 31, a predetermined size that can scatter a predetermined amount of evaporant elongated rectangular slit 32a and the slit 32a at a predetermined angle α with Satoshi
の周囲にて拡開したV型形状の指向範囲制御部32bとが形成された開口部32と、周囲に設けられた蒸発源3 The opening 32 and the directional range controller 32b of the flared V-shape at ambient is formed, evaporation source 3 provided around
0の温度を制御するヒーター34とにより構成され、好適にはカーボンにより形成されるが、窒化ボロン、アルミナ等のセラミックスや、Ti,Al,Cuなどの金属により形成しても良い。 0 is constituted by a heater 34 to control the temperature of, but preferably formed by carbon, boron nitride, and ceramics such as alumina, Ti, Al, may be formed of a metal such as Cu. 【0028】本発明第3の実施形態の有機EL素子製造装置は上記のような構成とされており、2つの蒸発源3 The organic EL device manufacturing apparatus of the present invention the third embodiment is configured as described above, the two evaporation sources 3
0b,30cから同時に有機材料を蒸着することで、搬送されている基板11表面に傾斜有機層を再現性よく成膜する。 0b, by depositing an organic material simultaneously from 30c, reproducibly deposited inclination organic layer on the substrate 11 surface being conveyed. 【0029】ここで、成膜される傾斜有機層と蒸発源3 [0029] Here, the evaporation source 3 and the inclined organic layer deposited
0b、30cとの関係について説明する。 0b, the relationship between 30c will be described. 蒸発源となる有機化合物は蒸発源30の収納部33内に充填した後に、筒体31内に嵌合され、ヒーター34により加熱されて開口部32から飛散する。 Organic compound serving as the evaporation source after filling into the accommodating portion 33 of the evaporation source 30, is fitted in tubular body 31, it is heated by the heater 34 scattered from the opening 32. このとき指向範囲制御部32bが飛散する蒸着物の範囲を制御すべく法線方向に対し、例えば33°の角度で、孔32aからの長さが1 With respect to the normal direction to control the scope of deposit at this time the directional range control unit 32b is scattered at an angle of for example 33 °, the length of the hole 32a 1
cmとして設けてあるので、蒸着物の飛散範囲を約66 Since it is provided as cm, about the scattering range of the deposit 66
°の範囲内に制御することができる。 ° can be controlled within a range of. このように飛散範囲を所定角度に制御した蒸発源30b,30cを成膜室22bの下方に指向角度を調整して固定する。 Thus scattering range evaporation source 30b that is controlled to a predetermined angle, 30c are fixed by adjusting the directivity angle below the deposition chamber 22b. 基板11 Substrate 11
上における蒸発源30bによる蒸発範囲をB、蒸発源3 B evaporation range of the evaporation source 30b on evaporation sources 3
0cによる蒸発範囲をCと図示する。 Evaporation range by 0c shown as C. 蒸発源30b,3 Evaporation source 30b, 3
0cの取り付け角度、取り付け位置および開口部32 Mounting angle 0c, mounting position and the opening 32
(孔32aおよび指向範囲制御部32b)を調整することにより、上述したような傾斜構造の有機層を形成できる。 By adjusting the (hole 32a and the directional range control section 32 b), it can form an organic layer of the inclined structure as described above. 例えば図13では図面左側から搬送されてきた基板11上に、蒸発範囲Bのみの位置においては蒸発源30 On the substrate 11 conveyed from the left side of the drawing in example 13, the evaporation source 30 in the position of only evaporation range B
bによる蒸着物が成膜され、続いて右側に移動して蒸発範囲BおよびCが重なる位置においては両蒸発源30 Deposits by b is deposited, followed by both evaporation source at a position where the evaporation range B and C overlap by moving to the right 30
b、30cからの蒸着物が同時に蒸着され、最後に蒸発範囲Cのみの位置で蒸発源30cからの蒸着物のみが成膜される。 b, it is deposited deposit from 30c simultaneously, only deposits from the evaporation source 30c in the position of the last evaporation range C only is deposited. このとき各蒸発源から基板上に到達する蒸着物の量が蒸発源の蒸着範囲の周辺部に向かうにしたがって蒸着量の少なくなるものとすれば、連続して混合比を変化する傾斜構造を作製することができる。 In this case as the amount of the deposit to reach the substrate from the evaporation source is reduced in the deposition amount toward the peripheral portion of the deposition region of the vapor source, prepared gradient structure that changes the mixture ratio continuously can do. 特に所定角度に傾けた蒸発源を用いるので、蒸発源からの距離を大きくして異なる蒸発源からの蒸発範囲が重なる領域を利用して傾斜有機層を作製する場合に比べて、製造装置の大きさをコンパクト化することができ、装置のコストおよび設置スペースコストを低減することができ得る。 In particular, since use of the evaporation source inclined at a predetermined angle, as compared with the case of manufacturing a gradient organic layer using evaporation ranges overlap region from the distance increased to different evaporation sources from the evaporation sources, the manufacturing apparatus size of the can be made compact, may be able to reduce the cost and installation space cost of the device. なお、符号Zで示すものは蒸着物の成分混合の境界線である。 Incidentally, those indicated by the reference numeral Z indicates the boundary of the component mixture of deposit. 【0030】このような蒸発源30を設けた成膜室と一定方向に移動する基板11とを備えた有機EL素子製造装置21とすることで、作製しようとする傾斜構造の有機EL素子を再現性よく、しかも簡単に作製することができる。 [0030] With the organic EL device manufacturing apparatus 21 that includes a substrate 11 that moves such evaporation source 30 to the deposition chamber constant direction having a reproduced the organic EL element of the inclined structure to be produced sexual well, yet it can be easily manufactured. なお、本実施形態において、蒸発源30は1つに限定されず、2つ以上の蒸発源が配置されていてもよい。 In the present embodiment, the evaporation source 30 is not limited to one, two or more evaporation sources may be disposed. また、傾斜構造の有機層を作製する成膜室も、同様に一つに限定されず複数設けられていてもよい。 Further, the deposition chamber for producing an organic layer of gradient structure also may be similarly provided with a plurality not limited to one. 【0031】次に、第4の実施形態について説明する。 Next, a fourth embodiment will be described.
なお、先の実施形態と同一の機能を有する箇所は同一の符号を付し詳細な説明を省略する。 Incidentally, portions having the above embodiments same functions will be omitted subjected detailed description the same reference numerals. 本実施形態においては、蒸発源からの蒸発物の飛び出し量を制御した複数の蒸発源を並設することにより、傾斜有機層を作成している。 In the present embodiment, by juxtaposed a plurality of evaporation sources to control the amount of protrusion of evaporant from the evaporation source, and creating a tilt organic layer. 図15および図16は本発明による好適な傾斜型構造の有機EL素子10(図10を参照)を成膜する蒸発源部の説明図である。 15 and FIG. 16 is an explanatory view of the vaporization source unit for forming an organic EL device 10 of the preferred inclined structure according to the present invention (see Figure 10). 本発明においても傾斜型構造の有機EL素子10は、いわゆるインライン方式の真空成膜装置を用いて作製する。 Organic EL elements 10 of the inclination-type structure in the present invention is fabricated using a vacuum deposition apparatus of a so-called in-line system. インライン方式の真空成膜装置は、例えば一定速度で基板11が移動する機能を有し、 Vacuum deposition apparatus of an inline system, for example, a function of the substrate 11 moves at a constant speed,
複数の蒸発源30を有する成膜室22と、排気装置26 A deposition chamber 22 having a plurality of evaporation sources 30, exhaust device 26
により構成されている。 And it is made of. また、成膜室の前後にロードロック室28a、28bが設けられている。 In addition, the load lock chamber 28a, 28b is provided on the front and back of the deposition chamber. 蒸発源30は飛び出し方向に指向性を持って蒸発物が飛散するものとされ、少なくとも2つの蒸発源からの蒸発物が基板11 Evaporation source 30 is assumed to evaporant with directivity in the direction flying out from scattering evaporation of at least two evaporation source substrate 11
上に同時に成膜するものとされている(図12参照)。 It is supposed to be deposited simultaneously on (see FIG. 12). 【0032】図面において符号11は基板で、図面左から右方向に向かって所定の速度で移動する。 The reference numeral 11 in the drawing to move the substrate, from the drawings the left to right direction at a predetermined speed. 成膜室22 The deposition chamber 22
には複数の蒸発源を備えており、搬送されてくる基板1 Substrate comes is to have, the transport includes a plurality of evaporation sources in one
1表面に成膜する。 Forming a film on 1 surface. 例えば第1成膜室22aにて蒸発源30aによりホール注入層、第2成膜室22bにおいて蒸発源41および蒸発源42により傾斜有機層、第3成膜室22dにおいて蒸発源30dにより陰極材料をそれぞれ成膜する。 For example the hole injection layer by the evaporation source 30a in the first film forming chamber 22a, inclined organic layer by evaporation source 41 and the evaporation source 42 in the second film forming chamber 22b, the cathode material by evaporation source 30d in the third film forming chamber 22d each is formed. 各成膜室において成膜する材料、蒸発源の数および成膜室の数は、作製しようとする有機EL素子構造に応じて適宜選択する(図12、15参照)。 Materials deposited in each deposition chamber, the number of the number and the deposition chamber of the evaporation source is appropriately selected according to the organic EL device structure to be produced (see FIG. 12 and 15). 【0033】第2成膜室22bの下部には、2つの輻射加熱方式の長尺の蒸発源41、42が長手方向が基板移動方向と平行になるように並設され、第1蒸発源41による蒸発物と第2蒸発源42による蒸発物が基板11上で同時に蒸着されるように、図15(B)に示すように基板法線方向に対して僅かに傾斜して設置している。 [0033] The lower portion of the second film forming chamber 22b, the evaporation sources 41 and 42 of the elongated two radiant heating system is a longitudinal juxtaposed in parallel to the substrate movement direction, the first evaporation source 41 are placed slightly inclined manner vapors are simultaneously deposited on the substrate 11, relative to the substrate normal direction as shown in FIG. 15 (B) by evaporation thereof and the second evaporation source 42 according to. なお、基板11は図15(A)においては紙面左側から右側に、図15(B)においては紙面に対して奥側から手前側に向かって移動する。 The substrate 11 from the left side to the right side in FIG. 15 (A), the movement toward the front side from the back side of the paper surface in FIG. 15 (B). また、蒸発源41および42 Further, the evaporation sources 41 and 42
は図15(A、B)に示したように、所定の量の蒸発物を収納する函体43と、函体43の開口部を覆う蓋4 Figure 15 (A, B) as shown in, the box body 43 for housing a predetermined quantity of evaporant, lid 4 covering the opening of the box body 43
4,45と、函体43の周囲に設けられた温度を制御するヒーター46とにより構成され、蓋44,45には所定の大きさとした複数の孔47,48が設けられている。 And 4,45, is constituted by a heater 46 to control the temperature provided around the box body 43, a plurality of holes 47, 48 is provided with a predetermined size in the lid 44, 45. 第1蒸発源41の蓋44には、基板11が移動するに従って径がしだいに小さくなる孔47aから47fが設けられ、第2蒸発源42の蓋45には、基板11が移動するに従って逆に径がしだいに大きくなる孔48aから48fが設けられている。 The lid 44 of the first evaporation source 41, diameter 47f is provided from gradually becomes smaller hole 47a in accordance with the substrate 11 is moved, the lid 45 of the second evaporation source 42, the opposite accordance substrate 11 moves 48f are provided from the diameter gradually larger holes 48a. なお、これらの蒸発源は好適にはカーボンにより形成されるが、窒化ボロン、アルミナ等のセラミックスや、Ti,Al,Cuなどの金属により形成しても良い点は第3の実施形態と同一である。 Although these evaporation sources are formed by preferably carbon, boron nitride, and ceramics such as alumina, Ti, Al, may be formed of a metal such as point Cu is the same as the third embodiment is there. また、図16に示すように孔47、48の間隔を徐変するものとしても良い。 Further, it may be intended to gradually change the spacing of the holes 47, 48 as shown in FIG. 16. 【0034】本発明第4の実施形態の有機EL素子製造装置は上記のような構成とされており、2つの蒸発源4 The organic EL device manufacturing apparatus of the present invention the fourth embodiment is configured as described above, the two evaporation sources 4
1,42から同時に有機材料を蒸着することで、搬送されている基板11表面に傾斜有機層を再現性よく成膜することができ得る。 By depositing the organic material simultaneously from 1,42 it may be capable of reproducibly forming an inclined organic layer on the substrate 11 surface being conveyed. 【0035】ここで、成膜される傾斜有機層と蒸発源4 [0035] Here, the evaporation source 4 and the inclined organic layer deposited
1,42との関係について説明する。 The relationship between 1,42 will be explained. 蒸発源となる有機化合物は蒸発源41,42の蓋44,45に設けられた各孔47,48を通して基板11上に到達する。 The organic compound as a vapor source to reach the substrate 11 through the holes 47, 48 provided on the lid 44, 45 of the evaporation source 41. このとき第1蒸発源41において、孔47aの飛散量に比べて47fの飛散量は小さい。 In the first evaporation source 41 at this time, the amount of scattered 47f than the amount of scattered holes 47a is small. そのため、基板11上に到達する蒸発物は基板11の移動に伴って低減する。 Therefore, vapors to reach the substrate 11 is reduced with the movement of the substrate 11. 逆に第2蒸発源42においては孔48aの飛散量に比べて48 Conversely in the second evaporation source 42 as compared to the amount of scattered holes 48a 48
fの飛散量が大きいので、基板11上に到達する蒸発物は基板11の移動に伴って増加する。 Because the amount of scattered f is large, evaporation product to reach the substrate 11 increases with movement of the substrate 11. 蒸発源41,42 Evaporation sources 41 and 42
の取り付け角度、取り付け位置および孔47,48の間隔と大きさ等を調整することにより、上述したような傾斜構造の有機層を形成できる。 The mounting angle, by adjusting the spacing and size of the mounting position and the hole 47, 48, etc., can form an organic layer of the inclined structure as described above. また、蒸発源と基板までの距離を適宜離間することで基板上に形成される有機層の均一性を向上させている。 Further, thereby improving the uniformity of the organic layer formed on the substrate by appropriately spacing the distance to the evaporation source and the substrate. 【0036】このような蒸発源41,42を設けた成膜室と一定方向に移動する基板11とを備えた有機EL素子製造装置とすることで、作製しようとする傾斜構造の有機EL素子を再現性よく、しかも簡単に作製することができる。 [0036] With such an organic EL element manufacturing apparatus provided with the evaporation source 41 and 42 provided with the film-forming chamber and the substrate 11 to move in a certain direction, the organic EL element of the inclined structure to be produced with good reproducibility, yet it can be easily manufactured. なお、本実施形態においても、蒸発源は2つ以上を配置していてもよい。 Also in this embodiment, the evaporation source may also be arranged more two. また、傾斜構造の有機層を作製する成膜室も、同様に一つに限定されず複数設けられていてもよい。 Further, the deposition chamber for producing an organic layer of gradient structure also may be similarly provided with a plurality not limited to one. また、各蒸発源41,42は夫々一つの函体43に複数の孔47または孔48を設けた蓋4 Each evaporation source 41 lid 4 having a plurality of holes 47 or holes 48 in each one of a box body 43
4,45を被着するものとしているが、これに限らず、 It is assumed that depositing 4,45 However, the present invention is not limited to this,
例えば蒸発源41を各孔47a,47b,47c,47 For example the evaporation sources 41 each hole 47a, 47b, 47c, 47
d,47e,47fに対応した複数の個別に制御可能な独立の蒸発源として、一列に並べたものを用いる等の分割蒸発源を蒸発源として用いることもできる。 d, 47e, as evaporation sources of a plurality of individually controllable independently corresponding to 47f, it is also possible to use a split evaporation source such use those arranged in a row as the evaporation source. 【0037】また、第3および第4の実施形態においても、第1および第2の実施形態のように位置調整可能な仕切り板や、防着板、囲み板を設けることもでき得る。 Further, in the third and fourth embodiments, the position and adjustable partition plate as in the first and second embodiments, deposition preventing plate may be also possible to provide a shroud.
基板11としては板材でもフィルムでも良く、ガラス、 The substrate 11 may be a film in sheet glass,
プラスチック、など絶縁体に陽極として機能する薄膜を形成させたものを用いることができる。 Plastics, etc. can be used those obtained by forming a thin film serving as an anode in an insulator. 蒸発方法は、加熱蒸発(抵抗加熱、EB加熱)、スパッタ蒸発などいずれでもよい。 Evaporation method, thermal evaporation (resistance heating, EB heating), may be either a sputtering evaporation. 【0038】また、今までの説明は水平方向に基板が移動するいわゆる横置きの装置の例を示したが、基板を縦置きとした場合、基板を背中合わせにして2枚重ねて搬送するものとし、その両側に成膜室を配置して側面から蒸着材料を飛ばすものとしてもよい。 Further, the description so far has shown an example of a so-called transverse devices substrate in the horizontal direction moves, when the vertically substrate, shall convey two-ply to the substrate back to back and it may be a skip an evaporation material from the sides by placing the film forming chamber on both sides. これにより、2枚の基板を同時に成膜できるようになり、1枚送りに比べて、処理能力を2倍にすることができる。 Thus, now the two substrates can be simultaneously formed, as compared with the single feed can be processed ability to double. 【0039】傾斜有機層としてホール輸送性材料と電子輸送性材料の各1種類を所定の濃度勾配を持つように作製する例にて説明したが、これに限るものではなく、3 [0039] Although described in example of manufacturing each one hole transporting material and electron transporting material to have a predetermined gradient as inclined organic layer is not limited thereto, 3
種類以上の材料を用いて傾斜有機層を形成するものとしてもよい。 The more types of materials may be those which form an inclined organic layer using. さらに積層型有機EL素子において隣り合う2層であれば、ほかの層との組み合わせにおいても作製可能である。 Furthermore, if two layers adjacent to each other in the stacked organic EL device, it is also possible to produce in combination with other layers. 【0040】 【実施例】傾斜構造を持つ有機EL素子の作製装置の実施例を以下に説明する。 [0040] Examples of a manufacturing apparatus of an organic EL device having EXAMPLES inclined structure is described below. 基板は200mm×200mmのIndium t The substrate of 200mm × 200mm Indium t
in oxide(ITO)付きガラスを用いた。 Using a glass with in oxide (ITO). 作製した素子の構造は、ホール注入層/傾斜構造層/電子注入層/陰極層とした。 Structure of the fabricated device was a hole injection layer / gradient structure layer / electron injection layer / cathode layer. 装置は、図1のようなインライン装置を用いて作製した。 Device was made using an in-line apparatus shown in FIG 1. 基板は第1成膜室2a側から入れ、速度 The substrate was placed from the first film forming chamber 2a side, speed
1.3 mm/sで搬送され、第4成膜室2d側から出す。 It carried in 1.3 mm / s, out of the fourth deposition chamber 2d side. 【0041】第1成膜室2aで、銅フタロシアニンの薄膜を作製し、ホール注入層を形成する。 [0041] In the first film forming chamber 2a, and a thin film of copper phthalocyanine, to form the hole injection layer. 次に、第2成膜室2bで、図7に示すような分子構造を持つホール輸送性材料N,N'-di(1-naphthyl)-N,N'-diphenyl-[1,1'-b Next, the second film forming chamber 2b, the hole transporting material N having a molecular structure as shown in FIG. 7, N'-di (1-naphthyl) -N, N'-diphenyl- [1,1'- b
iphenyl]-4,4'-diamine(α-NPD)と、図8に示す電子輸送性材料(発光材料を兼ねる)tris(8-hydroxyqu iphenyl] -4,4'-diamine and (α-NPD), (serving also as a luminescent material) electron transporting material shown in FIG. 8 tris (8-hydroxyqu
inoline)aluminum(Alq3)を用いて傾斜構造層を形成する。 Forming a graded structure layer using inoline) aluminum (Alq3). 第2成膜室2bの内部構造は図2のように成っている。 The internal structure of the second film forming chamber 2b is as shown in FIG. 蒸発速度は、傾斜構造層の膜厚が2000Åとなるように調整した。 The rate of evaporation, the film thickness of the gradient structure layer was adjusted to be 2000 Å. 次に、第3成膜室2cでLi薄膜を作製し、電子注入層形成した。 Next, to prepare a Li thin film in the third film forming chamber 2c, thereby forming an electron injection layer. 最後に、第4成膜室2d Finally, the fourth film forming chamber 2d
で陰極Alを成膜した。 In the formation of the cathode Al. 【0042】また、リファレンスとしてα-NPDを1 [0042] In addition, the α-NPD as a reference 1
000Åと、Alq3を1000Åの厚みで順に積層した以外は同一の工程で成膜して有機EL素子を作製した。 And 000A, to manufacture an organic EL device was formed in the same process except that sequentially stacked the Alq3 to a thickness of 1000 Å. 【0043】両素子のELスペクトルを図9に示す。 [0043] The EL spectra of both elements is shown in FIG. この図は実施例サンプルQ、および、リファレンスサンプルRのいずれもがAlq3に基づく発光スペクトルを示しており、基本的な発光特性において変わりのない傾斜有機層を備えた有機EL素子10が得られている。 This figure embodiment sample Q, and none of the reference sample R is shows the emission spectrum based on Alq3, the organic EL device 10 having the inclined organic layer with no change in the fundamental emission characteristics obtained there. 【0044】 【発明の効果】効果1:従来法では、濃度勾配を形成させるためには、蒸発速度を逐次変化させる制御が必要となる。 [0044] [Effect of the Invention] Effects 1: In the conventional method, in order to form a concentration gradient, it is necessary to control to sequentially change the rate of evaporation. 一方、本発明では蒸発速度を一定に保ちながら、 On the other hand, while keeping the evaporation rate constant in the present invention,
基板を移動させることにより、濃度勾配を形成する。 By moving the substrate, to form a concentration gradient. 水晶振動子での膜厚モニターによる蒸発速度制御は、蒸発速度を一定時間保持する制御は容易であるが、蒸発速度を逐次変化させる制御は、現技術では困難である。 Evaporation rate controlled by a thickness monitor with a quartz oscillator is the control to maintain the evaporation rate constant time is easy, control to sequentially change the evaporation rate is difficult with current technology. したがって、本発明では濃度勾配パターンの再現性が高くなるという効果がある。 Accordingly, the present invention has the effect that the reproducibility of the concentration gradient pattern is high. 【0045】効果2:従来のクラスター型蒸着装置は、 [0045] Effect 2: conventional cluster-type vapor deposition apparatus,
傾斜構造を持つ膜の膜厚を変更する場合、蒸発速度を時間とともに変化させる条件、すなわち、初期速度、最終速度、および、速度勾配、を決め直さなければならない。 When changing the thickness of the membrane having a gradient structure, conditions for changing the evaporation rate with time, i.e., initial velocity, final velocity, and the velocity gradient must re decide. また、水晶振動子での膜厚モニターによる蒸発速度制御のため、速度を逐次変化させる制御は困難である。 Further, since the evaporation rate controlled by a thickness monitor with a quartz oscillator, control to sequentially change the speed is difficult.
したがって、このような従来法では、生産レベルで膜厚を変えることは困難である。 Thus, in such conventional methods, it is difficult to change the thickness at the production level. 一方、本発明では、設定した蒸発速度や基板の移動速度を変えるだけで膜厚を容易に変えることができる。 On the other hand, in the present invention can be easily changed only by the thickness changing the moving speed of the evaporation rate and the substrate was set. また、蒸発源の仕切り板の高さや蒸発源を変えれば、濃度勾配も容易に変えられる。 Further, by changing the height or the evaporation source of the partition plate of the evaporation source, the concentration gradient may be easily changed. 【0046】効果3:従来は、膜厚の均一な膜を得るために、基板を自転させていた。 [0046] Effect 3: Conventionally, in order to obtain a uniform film thickness, was by rotation of the substrate. また、基板を交換する毎に、搬送時間が必要であった。 Further, each time exchanging substrate was required transfer time. 一方、本発明の方法を用いると、インライン方式なので、搬送時間が大幅に短縮され、基板の自転に要する時間も不要となる。 On the other hand, the use of the method of the present invention, since the in-line system, significantly reduces the transfer time, the time becomes unnecessary required for rotation of the substrate. したがって、本発明には薄膜作製の処理能力が高くなるという効果がある。 Accordingly, the present invention has the effect of thin film preparation processing capability becomes high. 【0047】効果4:一般に、真空蒸着法を用いた場合、蒸発した材料の内、基板に膜として使われる割合は1割以下である。 [0047] Effect 4: In general, when using a vacuum deposition method, among the vaporized material, the ratio used as a film substrate is less than 10%. 大部分の蒸発した材料は、真空容器の内壁に付着してしまう。 Evaporated material Most, it adheres to the inner wall of the vacuum chamber. これは、蒸発方向に指向性が無いためである。 This is because there is no directivity in the evaporation direction. 一方、本発明の加熱された板を蒸発源周囲に置く方法を用いると、蒸発方向が制限できる。 On the other hand, the use of a method of placing a heated plate of the present invention the evaporation source around the evaporation direction can be restricted. したがって、本発明では蒸発材料の使用効率が高くなるという効果がある。 Accordingly, the present invention has the effect that the utilization efficiency of the evaporation material is increased.

【図面の簡単な説明】 【図1】 本発明に係る有機エレクトロルミネッセンス素子の製造装置および製造方法の実施形態を示す略示的な断面図である。 It is substantially expressly sectional view showing an embodiment of apparatus and a method for manufacturing an organic electroluminescent device according to the BRIEF DESCRIPTION OF THE DRAWINGS [Figure 1] present invention. 【図2】 同じく本発明に係る製造装置および製造方法の要部である傾斜構造層を形成するための成膜室を示す略示的な断面図である。 [2] which is also substantially expressly sectional view showing a film formation chamber for forming a graded structure layer is a main part of the manufacturing apparatus and method according to the present invention. 【図3】 本発明により形成可能な傾斜構造層の例を示すグラフである。 3 is a graph showing an example of a possible form inclined structure layer by the present invention. 【図4】 傾斜構造層を形成するときの仕切板および防着板の作用を示す説明図である。 4 is an explanatory view showing an operation of the partition plate and the deposition preventing plate for forming the inclined structure layer. 【図5】 傾斜構造層を形成するための成膜室の別な実施形態を示す説明図である。 5 is an explanatory diagram showing another embodiment of the film forming chamber for forming a gradient structure layer. 【図6】 傾斜構造層を形成するための成膜室の更に別な実施形態を示す説明図である。 6 is an explanatory view showing yet another embodiment of the film forming chamber for forming a gradient structure layer. 【図7】 実施例で用いた有機材料α−NPDの分子構造を示す構造式である。 7 is a structural formula showing the molecular structure of organic materials alpha-NPD used in Examples. 【図8】 実施例で用いた有機材料Alq3の分子構造を示す構造式である。 8 is a structural formula showing the molecular structure of organic material Alq3 used in Examples. 【図9】 本発明に係る製造装置および製造方法により形成された有機EL素子の発光スペクトルを示すグラフである。 9 is a graph showing an emission spectrum of an organic EL element formed by the manufacturing apparatus and the manufacturing method according to the present invention. 【図10】 傾斜構造を有する有機EL素子の構成を示す断面図である。 10 is a cross-sectional view showing a structure of an organic EL element having an inclined structure. 【図11】 傾斜構造層の濃度勾配を示すグラフである。 11 is a graph showing the concentration gradient of the gradient structure layer. 【図12】 本発明に係る有機エレクトロルミネッセンス素子の製造装置の他の実施形態を示す略示的な断面図である。 12 is a schematic expressly cross-sectional view showing another embodiment of an apparatus for manufacturing an organic electroluminescent device according to the present invention. 【図13】 図12の製造装置および製造方法の要部である傾斜構造層を形成するための成膜室を示す略示的な断面図である。 13 is a schematic expressly sectional view showing a film formation chamber for forming a graded structure layer is a main part of the manufacturing apparatus and manufacturing method of FIG. 【図14】 傾斜構造層を形成するための蒸発源の実施形態を示す説明図である。 14 is an explanatory view showing an embodiment of the evaporation source for forming a gradient structure layer. 【図15】 傾斜構造層を形成するための蒸発源の別の実施形態を示す説明図である。 15 is an explanatory diagram showing another embodiment of the evaporation source for forming a gradient structure layer. 【図16】 図16の蒸発源を用いて傾斜構造層を形成する製造装置及び製造方法の要部を示す説明図である。 16 is an explanatory view showing an essential part of the manufacturing apparatus and method for forming a graded structure layer using evaporation source 16. 【図17】 従来例の製造装置を示す説明図である。 17 is an explanatory view showing a manufacturing apparatus of a conventional example. 【図18】 従来例の製造装置の要部を示す説明図である。 18 is an explanatory view showing a main portion of a conventional example of a manufacturing apparatus. 【符号の説明】 1,21……有機EL素子の製造装置2,22……成膜室3,30……蒸発源4,34……ヒーター5,25……仕切り板6,26……排気装置7,27……膜厚モニタ8……防着板9……囲み板10……有機EL素子11……基板12……陽電極13……有機層14……陰電極15……囲周板2e……搬送室28……ロードロック室30……蒸発源31……筒体32……開口部32a……スリット32b……指向範囲制御部33……収納部34……ヒーター41,42……蒸発源43……函体44,45……蓋46……ヒーター47,48……孔 [Description of Reference Numerals] 1, 21 ...... manufacturing apparatus of an organic EL element 2, 22 ...... deposition chamber 3, 30 ...... evaporation sources 4, 34 ...... heater 5,25 ...... partition plate 6, 26 ...... exhaust device 7, 27 ...... thickness monitor 8 ...... preventing plate 9 ...... shroud 10 ...... organic EL element 11 ...... substrate 12 ...... anode 13 ...... organic layer 14 ...... negative electrode 15 ...... encircled plate 2e ...... transfer chamber 28 ...... load lock chamber 30 ...... evaporation source 31 ...... cylinder 32 ...... opening 32a ...... slit 32 b ...... directional range controller 33 ...... accommodating portion 34 ...... heaters 41 and 42 ...... evaporation source 43 ...... box body 44, 45 ...... lid 46 ...... heater 47, 48 ...... hole

Claims (1)

  1. 【特許請求の範囲】 【請求項1】 対向する陽極電極と陰極電極の間に少なくとも1層の二種以上の有機化合物から構成され、混合比が厚さ方向で異なる傾斜有機層を有する有機エレクトロルミネッセンス素子の製造方法であって、同一の真空成膜室内に仕切り板を挟んで配置した複数の有機化合物の蒸発源に対して相対的に基板を移動させること、および/または同一の真空成膜室内における基板の相対的な移動方向において蒸発量が異なる複数の蒸発源を備えることにより傾斜有機層を作製することを特徴とする有機エレクトロルミネッセンス素子の製造方法。 Consists Patent Claims 1, wherein at least one layer of two or more organic compounds of between opposing anode and cathode electrodes, an organic electroluminescence having a different inclination organic layer in a thickness direction mixing ratio a method of manufacturing a luminescent element, moving the relative substrate relative evaporation sources of a plurality of organic compound disposed across the partition plate in the same vacuum deposition chamber, and / or the same vacuum deposition method of manufacturing an organic electroluminescent device characterized by evaporation of the relative moving direction of the substrate in the chamber to produce a tilt organic layer by providing a plurality of different evaporation sources. 【請求項2】 キャリア輸送性の異なる二種以上の有機化合物で上記傾斜有機層を構成することを特徴とする請求項1記載の有機エレクトロルミネッセンス素子の製造方法。 2. A method of manufacturing an organic electroluminescent device according to claim 1, wherein the forming the inclined organic layer carrier transporting different two or more kinds of organic compounds. 【請求項3】 第1電極および第2電極と、両電極間に挟まれた複数の有機物化合物材料からなりその混合比が厚さ方向で異なる傾斜有機層を含む有機化合物層を備え、電極から注入した電流により有機化合物層から発光する有機エレクトロルミネッセンス素子の製造装置であって、少なくとも仕切り板を挟んで配置した第1および第2の蒸発源部と、蒸発源に対して相対的に移動可能な基板とを備え、上記仕切り板は、第1の蒸発源から飛散する第1蒸発材料の飛散路、および第2の蒸発源から飛散する第2蒸発材料の飛散路の双方の飛散路が重なる領域に突出する長さで、且つ、第1および第2の蒸発材料の双方が基板に到達可能な長さを有し、上記第1の蒸発源および第2の蒸発源から基板上に同時に有機材料を飛散させて、基板表面に Provided 3. A first electrode and a second electrode, an organic compound layer including a plurality of organic compound material made different tilt organic layer the mixture ratio of the thickness direction sandwiched between the electrodes, the electrode a manufacturing apparatus of an organic electroluminescent device which emits light from the organic compound layer by injected current, the first and second evaporation source unit disposed across at least the partition plate relatively movable with respect to the evaporation source comprising such a substrate, the partition plate is scattered path of the first evaporation material, and the second scattering path both scattering paths of the vaporization material scattered from the second evaporation source overlap scattered from the first evaporation source length of protruding regions, and has both the length can reach the substrate of the first and second evaporation material at the same time the organic from the first evaporation source and the second evaporation source on the substrate by scattering the material, on the substrate surface 第1の蒸発材料および第2の蒸発材料の混合比が厚さ方向で異なる傾斜有機層を作製できる有機エレクトロルミネッセンス素子の製造装置。 First evaporation material and a second apparatus for producing an organic electroluminescent device capable of producing different tilt organic layer mixing ratio the thickness direction of the evaporation material. 【請求項4】 第1電極および第2電極と、両電極間に挟まれた複数の有機物化合物材料からなりその混合比が厚さ方向で異なる傾斜有機層を含む有機化合物層を備え、電極から注入した電流により有機化合物層から発光する有機エレクトロルミネッセンス素子の製造装置であって、蒸着物出射口となる孔と蒸発源側から基板側に向かって該孔の周囲から拡開している指向範囲制御部とを備えた少なくとも2つの蒸発源と、蒸発源に対して相対的に移動可能な基板とを備え、上記蒸発源は、第1の蒸発源から飛散する第1蒸発材料の飛散路、および第2の蒸発源から飛散する第2蒸発材料の飛散路の双方の飛散路が重なっており、上記第1の蒸発源および第2の蒸発源から基板上に同時に有機材料を飛散させて、基板表面に第1の蒸発材料およ Provided 4. A first electrode and a second electrode, an organic compound layer including a plurality of organic compound material made different tilt organic layer the mixture ratio of the thickness direction sandwiched between the electrodes, the electrode a manufacturing apparatus of an organic electroluminescent device which emits light from the organic compound layer by the injected current, the directional range that is expanded from the circumference of the hole toward the substrate side from the evaporation source side hole serving as a deposit exit port at least two evaporation sources and a control unit, and a substrate capable of moving relative to the evaporation source, the evaporation source is scattered path of the first evaporation material scattered from the first evaporation source, and the second overlaps are scattered path both scattering paths of the second evaporation material scattered from the evaporation source, by scattering the organic material simultaneously onto the substrate from the first evaporation source and the second evaporation source, Oyo first evaporation material to the substrate surface び第2の蒸発材料の混合比が厚さ方向で異なる傾斜有機層を作製できる有機エレクトロルミネッセンス素子の製造装置。 Beauty second manufacturing apparatus of an organic electroluminescent device capable of producing different tilt organic layer mixing ratio the thickness direction of the evaporation material. 【請求項5】 第1電極および第2電極と、両電極間に挟まれた複数の有機物化合物材料からなりその混合比が厚さ方向で異なる傾斜有機層を含む有機化合物層を備え、電極から注入した電流により有機化合物層から発光する有機エレクトロルミネッセンス素子の製造装置であって、蒸着物出射口となる複数の孔を備えた少なくとも2つの蒸発源と、蒸発源に対して相対的に移動可能な基板とを備え、上記蒸発源は、第1の蒸発源から飛散する第1蒸発材料の飛散路、および第2の蒸発源から飛散する第2蒸発材料の飛散路の双方の飛散路が重なり、且つ、各蒸発源に設けられている複数の孔は上記基板の移動方向と略平行に並設されていると共に、少なくとも一つの孔の大きさが他の孔の大きさと異なっており、上記第1の蒸発源および第2 Includes 5. A first electrode and a second electrode, an organic compound layer including a plurality of organic compound material made different tilt organic layer the mixture ratio of the thickness direction sandwiched between the electrodes, the electrode a manufacturing apparatus of an organic electroluminescent device which emits light from the organic compound layer by injected current, and at least two evaporation sources provided with a plurality of holes serving as deposit exit port relatively movable with respect to the evaporation source comprising such a substrate, the evaporation source is scattered path of the first evaporation material, and scattering path both scattering paths of the second evaporation material scattered from the second evaporation source overlap scattered from the first evaporation source and, a plurality of holes provided in each evaporation source with being moved direction substantially parallel to the juxtaposed the substrate, and the size of the at least one hole is different from the size of the remaining holes, the the first evaporation source and a second の蒸発源から基板上に同時に有機材料を飛散させて、基板表面に第1の蒸発材料および第2の蒸発材料の混合比が厚さ方向で異なる傾斜有機層を作製できる有機エレクトロルミネッセンス素子の製造装置。 Of by scattering an organic material simultaneously onto the substrate from the evaporation source, the production of the first evaporation material and the second organic electroluminescent device capable of producing different tilt organic layer mixing ratio the thickness direction of the evaporation material to the substrate surface apparatus. 【請求項6】 上記第1の蒸発源部、第2の蒸発源部および仕切り板の周囲を囲み、加熱制御可能な囲み板が設置されていることを特徴とする請求項3から請求項5の何れかに記載の有機エレクトロルミネッセンス素子の製造装置。 Wherein said first evaporation source section, surrounds the second evaporation source portion and the partition plate, claim from claim 3 in which the heating controllable shroud is characterized in that it is installed 5 apparatus for producing an organic electroluminescence device according to any one of.
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