JP2003301255A - Molecular beam source cell for depositing thin film and method for thin film deposition - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To uniformly deposit an organic electroluminescence material on a substrate with a large area, and at the same time, to prevent the occurrence of defects of a film caused by a spitting phenomenon. <P>SOLUTION: A plurality of molecule emission ports 4, 4a, 4b, and 4c, which emit molecules of film forming materials a, b, and c evaporated from crucibles 5, 5a, 5b, and 5c toward the surface of a solid on which the film is formed are provided by arranging in one row or in a plurality of rows. Also, the molecular of the film forming materials a, b, and c generated at the crucibles 5, 5a, 5b, and 5c are emitted toward the surface of the solid from the molecule emission ports 4, 4a, 4b, and 4c through buffer chambers 9, 10, 9a, 10a, 9b, 10b, 9c, and 10c by providing the buffer chambers 9, 10, 9a, 10a, 9b, 10b, 9c, and 10c between the crucibles 5, 5a, 5b, and 5c and the molecule emission ports 4, 4a, 4b, and 4c. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to heating a film-forming material to sublimate, melt, or evaporate the film-forming material to generate molecules of the film-forming material. The present invention relates to a molecular beam source cell for thin film deposition, which is used for growing a film by depositing molecules on the solid surface thereof, and a thin film deposition method using the same.

[0002]

2. Description of the Related Art A thin film deposition apparatus called a molecular beam epitaxy apparatus is one in which a substrate is placed in a vacuum chamber that can be decompressed to a high vacuum, heated to a required temperature, and a quartz film is grown toward the thin film growth surface of the substrate. A molecular beam source cell such as a sen cell is installed. The film forming material housed in the crucible of this molecular beam source cell is heated by a heater to sublimate or melt and evaporate, and the vaporized molecules generated by this are incident on the thin film growth surface of the substrate, and a thin film is epitaxially grown on that surface. Thus, a film of a film forming material is formed.

The molecular beam source cell used in such a thin film deposition apparatus has a high thermal and chemical stability, such as PB.
The film-forming material is stored in a crucible made of N (pyrolytic boron nitride) or the like, and this film-forming material is heated by an electric heater provided outside the crucible, whereby the film-forming material is sublimated or melted. , To generate film-forming molecules.

In recent years, in the fields of displays and optical communication,
Research and development of organic electroluminescence elements (organic EL elements) are under way. This organic EL device is
It is an element in which a light emitting layer is formed of an organic low molecule or an organic polymer material having an L light emitting ability, and its characteristics are drawing attention as a self light emitting element. For example, its basic structure is
A film of a hole transport material such as triphenyldiamine (TPD) is formed on the hole injecting electrode, and a fluorescent substance such as aluminum quinolinol complex (Alq ₃ ) is laminated on the film as a light emitting layer, and further Mg, Li, Ca, etc. Is a metal electrode having a small work function as an electron injection electrode.

[0005]

Recently, it has been a demand of the times to increase the screen size of displays. for that reason,
Even in the display using the organic EL as described above, it is required to form the organic EL film on the substrate having a large area.
Particularly, in a display using an organic EL, it is required to form a uniform organic EL film on the substrate.

However, in a conventional vacuum vapor deposition apparatus used for forming an organic EL film, a film forming material is sublimated or evaporated from one crucible and molecules are ejected onto the surface of the substrate to deposit the film forming material. It is difficult to form a uniform thin film on a large-area substrate because it is a method of growing a film by using the above method.

As such an organic EL material, a powdery material is used as an evaporation source, and the powdery evaporation source material is sublimated to generate its molecules. However, at this time, the so-called spitting phenomenon, in which the molecules of the film forming material are aggregated with each other, clustered and scattered, is likely to occur. Then, the clustered molecules scatter toward and adhere to the solid film-forming surface on which the film is to be formed. The clusters attached to the film formation surface cause nonuniformity or discontinuity of the film, and cause defects in the film.

The present invention has been made in view of the problems in the conventional molecular beam source cell, and a first object thereof is to enable an organic electroluminescent material to be uniformly deposited on a large-area substrate. A second object is to prevent film defects due to the spitting phenomenon.

[0009]

According to the present invention, in order to achieve the above object, a solid surface on which molecules of film forming materials a, b and c evaporated from the crucibles 5, 5a, 5b and 5c are formed on a solid surface. Instead of providing a single molecular emission port 4, 4a, 4b, 4c for emission toward a plurality of molecular emission ports 4, 4a, 4
b and 4c are provided side by side in one line or a plurality of lines so that the film-forming materials a, b and c can be simultaneously deposited on the solid surface not in a spot shape but in a strip shape or a plane shape.

Further, the crucibles 5, 5a, 5b, 5c and the molecular emission ports 4, 4a, 4b, 4c are not directly opposed to each other, but the buffer chambers 9, 10, 9a, 10a, 9b, 10b,
By providing 9c, 10c, the crucibles 5, 5a, 5
The molecules of the film-forming materials a, b, and c generated in b and 5c are transferred to the buffer chambers 9, 10, 9a, 10a, 9b, and 10b.
9c, 10c and then molecular emission ports 4, 4a, 4b,
4c is to be fired toward the solid surface.

That is, the molecular beam source cell for thin film deposition according to the present invention has crucibles 5 and 5 for accommodating film forming materials a, b and c.
a, 5b, 5c, heating means for heating and sublimating or evaporating the film forming materials a, b, c in the crucibles 5, 5a, 5b, 5c, and facing the solid surface on which the film is to be formed. Film forming material a evaporated from the crucibles 5, 5a, 5b, 5c,
Molecular emission ports 4, 4a, 4b, 4 for emitting molecules b and c
c, and a plurality of the molecular emission ports 4, 4a, 4b, 4c are formed in a line or in a plurality of lines.

In such a molecular beam source cell for thin film deposition,
Since the film-forming materials a, b, and c can be deposited on the solid surface in the form of strips or planes from the plurality of molecular emission ports 4, 4a, 4b, and 4c, the solid surface on which the film is to be formed is By depositing the thin film while moving it in the direction orthogonal to the rows of 4a, 4b, and 4c, it becomes possible to efficiently deposit the thin film on a large area.

The thin film deposition molecular beam source cell according to the present invention comprises crucibles 5, 5a, 5b and 5c and molecular emission ports 4 and 4.
buffer rooms 9, 10, 9a, 10a, 9b, which are one or more small rooms, not directly facing a, 4b, 4c,
10b, 9c, 10c and molecular passage holes 6 leading to them,
7, 6a, 7a, 6b, 7b, 6c, 7c. The crucibles 5, 5a, 5b and 5c are connected to the buffer chambers 9 and 9 via the molecule passage holes 6, 6a, 6b and 6c.
Molecule generation chambers 8, 8a, 8b, 8 leading to a, 9b, 9c
It is located at c.

In such a molecular beam source cell for thin film deposition,
During the sublimation or evaporation of the film-forming materials a, b, c, even if some of the molecules of the film-forming materials a, b, c are clustered due to a so-called spitting phenomenon, the clusters are still formed in the buffer chambers 9, 10, 9a, 10a, 9b, 10b, 9c, 10c
Are trapped in and are not emitted from the molecular emission ports 4, 4a, 4b, 4c to the solid surface side. For this reason, the clustered molecules of the film forming materials a, b, and c do not adhere to the solid surface, and no defect occurs in the film.

In this case, there are buffer chambers 9, 10, 9a, 10a, 9b, 10b, 9c, 10 extending from the crucibles 5, 5a, 5b, 5c to the molecular emission ports 4, 4a, 4b, 4c.
There are a plurality of c, and the molecular passage holes 6, 7, 6 from the crucibles 5, 5a, 5b, 5c to the molecular emission ports 4, 4a, 4b, 4c.
It is preferable that a, 7a, 6b, 7b, 6c and 7c sequentially face different directions. By doing so, the clustered molecules of the film-forming materials a, b, c are transferred to the buffer chambers 9, 10, 9a, 10a, 9b, 10b, 9c, 10c.
Therefore, it is possible to reliably trap and prevent film defects.

Further, the molecule generating chambers 8, 8a, 8b, 8c in which the crucibles 5, 5a, 5b, 5c are arranged, and the film forming material a,
Molecular emission ports 4, 4a, 4b, 4 for emitting molecules b and c
between the buffer chambers 9, 10, 9a, 10a, 9
Since there are b, 10b, 9c, and 10c, the molecule generation chamber 8,
8a, 8b, 8c side and molecular emission ports 4, 4a, 4b, 4c
The side is in a state where the heat is gently cut off. Therefore, the molecular generation chambers 8, 8a, 8b, 8c and the molecular emission ports 4, 4 are
Separate heaters 3, 3a, 3b, 3c, 3 ', 3a', 3b ', 3 serving as heating means on the a, 4b, and 4c sides, respectively.
By providing c ', both temperature setting and control can be performed independently. Also in this respect, a film having no defect can be formed.

Further, it is preferable that the molecular emission ports 4b and 4c have rotatable openings so that the emission directions of molecules of the film forming materials b and c can be changed. By doing so, when a plurality of film-forming materials a, b, and c are simultaneously deposited on a solid surface by using a plurality of thin film deposition molecular beam source cells, the emission directions of the molecular emission ports 4b and 4c are appropriately adjusted. By doing so, it becomes possible to deposit a plurality of film forming materials a, b, and c at the same location on the solid surface.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION Next, embodiments of the present invention will be described specifically and in detail with reference to the drawings.
1 and 2 are a cross-sectional plan view and a vertical side view showing an embodiment of a molecular beam source cell for thin film deposition according to the present invention.

As is apparent from FIG. 2, in FIG. 1 and FIG.
Three molecular beam source cells 2a, 2b, 2c are used.
The central molecular beam source cell 2a is for depositing the film forming material a as the main component on the film forming surface of the substrate 1 which is a solid surface. Further, the molecular beam source cells 2b and 2c on both sides of the cell are to deposit film forming materials b and c, which are sub-components, so-called dopants, on the film forming surface of the substrate 1 which is a solid surface.

Each of the molecular beam source cells 2a, 2b and 2c is
The crucibles 5a, 5b, 5c accommodating the film forming materials a, b, c are arranged in the molecule generating chambers 8a, 8b, 8c. The crucibles 5a, 5a, 5c
First heaters 3a, 3b which are heating means for heating the film forming materials a, b, c stored in b, 5c and sublimating or evaporating them to generate molecules of the film forming materials a, b, c. ,
3c is provided.

Adjacent to the molecular generation chambers 8a, 8b, 8c in which the crucibles 5a, 5b, 5c are arranged are provided small chamber-shaped first buffer chambers 9a, 9b, 9c, and the molecular generation chambers 8a, 8
b, 8c and the first buffer chambers 9a, 9b, 9c are provided with a plurality of molecular passage holes 6a, 6 provided in partition walls that partition them.
It communicates via b and 6c.

Further, the first buffer chambers 9a, 9
In b and 9c, another small chamber-shaped second buffer chamber 10a, 10b, 10c is provided, and the first buffer chamber 9a, 9b, 9c and the second buffer chamber 10 are provided.
a, 10b, and 10c are a plurality of molecular passage holes 7 that are vertically arranged on both side surfaces of a partition that partitions them.
a, 7b, 7c.

Further, the second buffer chambers 10a, 10
In the front of b, 10c, a plurality of vertically aligned molecular emission ports 4
a, 4b, and 4c are provided laterally. The molecular emission ports 4a, 4b and 4c are used for the molecular generation chambers 8a and 8a.
b, 8c, the first buffer chambers 9a, 9b, 9c and the second buffer chamber 10 are generated from the crucibles 5a, 5b, 5c.
It is an opening for ejecting the molecules of the film forming materials a, b, and c that have passed through a, 10b, and 10c toward the film forming surface of the substrate 1.
Therefore, the substrate 1 on which the molecules of the film forming materials a, b, and c are deposited
The film-forming surface is placed toward the molecule emission ports 4a, 4b, 4c.

Around the molecular emission ports 4a, 4b, 4c, the second heaters 3a ', 3 are provided so as to surround them.
b ', 3c' are provided. This second heater 3
a ', 3b' and 3c 'are molecular emission ports 4a, 4b and 4c.
The temperature is maintained so that the molecules of the film-forming materials a, b, and c released from the film do not re-solidify.

The above-described structure is basically the same for the central molecular beam source cell 2a and the molecular beam source cells 2b, 2c on both sides thereof. However, in the central molecular beam source cell 2a for depositing the film forming material a as the main component on the film forming surface of the substrate 1 which is a solid surface, the orientation of the molecular radiation port 4a is fixed. On the other hand, in the molecular beam source cells 2b and 2c on both sides for depositing the film forming materials b and c, which are sub-components, so-called dopants, on the film forming surface of the substrate 1 which is a solid surface, the molecular radiation ports 4b and 4c are The molecular radiation ports 4b and 4c are rotated so that the directions thereof can be changed.

Using such a molecular beam source cell, the substrate 1
When forming a thin film such as an organic EL film on the film formation surface of. The first heaters 3a, 3b, 3c generate heat, and the crucibles 5a, 5b,
The film forming materials a, b and c in 5c are sublimated or evaporated to generate molecules of the film forming materials a, b and c.

The molecules of the film-forming materials a, b, and c that have been generated are discharged from the molecule generation chambers 8a, 8b, and 8c, respectively, into the molecule passage holes 6
First buffer chamber 9a, 9b, through a, 6b, 6c
Enter 9c. The molecules having entered the first buffer chambers 9a, 9b, 9c enter the second buffer chambers 10a, 10b, 10c through the molecule passage holes 7a, 7b, 7c. Further, the molecules that have entered the second buffer chambers 10a, 10b, 10c are emitted toward the film formation surface of the substrate 1 from the molecule emission ports 4a, 4b, 4c. This molecular flow is indicated by an arrow in the central molecular beam source cell 2a, but the molecular flow is the same in the molecular beam source cells 2b and 2c on both sides thereof.

As described above, the molecule generating chambers 8a, 8b, 8c
The molecules of the film-forming materials a, b, and c generated in 3
Molecule generation chamber 8 without being fired toward the film formation surface of
a, 8b, 8c to the first buffer chamber 9a, 9b, 9c
Since it is emitted toward the film formation surface of the substrate 1 through the second buffer chambers 10a, 10b, and 10c, the clustered molecules scattered from the crucibles 5a, 5b, and 5c due to so-called spitting reduction are Buffer chambers 9a, 9
b, 9c and the second buffer chambers 10a, 10b, 10c, they are not released to the substrate 1 side.

As described above, the crucibles 5, 5a, 5b, 5c
And the molecular emission chambers 4, 8a, 8b, and 8c in which are disposed, and the molecular emission ports 4, 4a, and 4 through which the molecules of the film-forming materials a, b, and c are emitted.
Buffer chambers 9, 10, 9a, 10 are provided between b and 4c.
Since there are a, 9b, 10b, 9c, and 10c, the molecular generation chambers 8, 8a, 8b, and 8c side and the molecular emission ports 4, 4a, and 4 are
The b and 4c sides are in a state where the heat is gently cut off. Further, separate heaters 3, 8 are provided on the side of the molecule generation chambers 8, 8a, 8b, 8c and on the side of the molecule emission ports 4, 4a, 4b, 4c, respectively.
By providing 3 ', both temperature setting and control during film formation can be performed independently.

In the embodiment shown in FIGS. 1 and 2, the molecules of the film-forming material a, which is the main component, from the central molecular beam source cell 2a become secondary components from the molecular beam source cells 2b and 2c on both sides thereof. The molecules of the film forming materials b and c are released and deposited on the film forming surface of the substrate 1. In this case, as shown in FIG. 1, in the molecular beam source cells 2b and 2c on both sides, the directions of the molecular emission ports 4b and 4c are adjusted so that both the main component molecules and the subcomponent molecules are formed on the substrate 1. It should be deposited at the same location on the film surface.

In addition, the molecular beam source cell 2a in the center and the molecular beam source cells 2b, 2c on both sides of the cell 2a also have their molecular emission ports 4.
Since b and 4c are vertically aligned, molecules of the film forming materials a, b, and c are deposited and deposited in a vertical strip shape on the film forming surface of the substrate 1. Therefore, by moving the substrate 1 as shown by an arrow in FIG. 1, it is possible to form a uniform thin film even on a large film formation surface.

Next, another embodiment of the thin film deposition molecular beam source cell according to the present invention will be described with reference to FIGS. FIG. 3 is a vertical sectional front view of the molecular beam source cell, and FIG. 4 is a vertical sectional side view of the molecular beam source cell. In the embodiment described above with reference to FIG. 1 and FIG. 2, the molecular emission ports 4a, 4b, 4c of the molecular beam source cells 2, 2a, 2b are arranged in a line in the vertical direction. On the other hand, in the embodiment shown in FIGS. 3 and 4, the molecular radiation ports 4 of the molecular beam source cell 2 are arranged in a line facing upward. Therefore, the film-forming surface of the substrate 1 on which the molecules of the film-forming material a are deposited is arranged downward toward the molecule emission port 4. That is, the embodiment shown in FIGS. 3 and 4 is an upper evaporation type molecular beam source cell.

In the embodiment shown in FIGS. 3 and 4, since the molecular emission ports 4 of the molecular beam source cell 2 are arranged in the front-back direction of the paper in FIG. 3 and in the left and right directions in FIG.
As shown by the arrow in FIG. 3, the substrate 1 is formed while being horizontally moved in the direction orthogonal to the arrangement direction of the molecular emission ports 4.

Other than that, the embodiment shown in FIGS. 3 and 4 is basically the same as the embodiment described above with reference to FIGS. That is, since the first heater 3, the crucible 5, the molecule generation chamber 8, the molecule passage holes 6 and 7, the buffer chambers 9 and 10, the molecule discharge port 4 and the second heater 3 ′ are provided, they are basically common to each other. There is. Further, although one molecular beam source cell 4 is arranged in FIGS. 3 and 4, a plurality of molecular beam source cells are arranged and a plurality of molecular beam source cells are arranged in the same manner as the embodiment described above with reference to FIGS. 1 and 2. The molecules of the film component can be simultaneously deposited on the film formation surface of the substrate 1.

FIG. 5 is a modification of the embodiment shown in FIGS. 3 and 4. In this molecular beam source cell 2, the first buffer chamber 9 is bent 90 ° laterally, and the second buffer chamber 10 is provided above the molecule generating chamber 8. The molecular emission ports 4 provided in the second buffer chamber 9 are opened horizontally and aligned in a line. Therefore, the emission direction of the molecules of the film forming material a from the molecule emission port 4 is the same as that of the molecular beam source cell according to the embodiment described above with reference to FIGS. 1 and 2. That is,
The film-forming surface of the substrate 1 on which molecules of the film-forming material a are deposited is arranged laterally so as to face the above-mentioned lateral molecular emission port 4, and is formed while moving in the front-back direction of the paper in FIG. .

The other configurations of the molecular beam source cell 2 shown in FIG. 5 are similar to those of the molecular beam source cell 2 shown in FIGS. 3 and 4, and the same portions are denoted by the same reference numerals. Also in this case, as in the embodiment described above with reference to FIGS. 1 and 2, it is possible to arrange a plurality of molecular beam source cells and simultaneously deposit a plurality of molecules of film forming components on the film forming surface of the substrate 1. .

6 and 7 show an embodiment in which the radiation direction of the molecules of the film forming material a is changed downward. As shown in FIG.
In this embodiment, a separate container-like crucible is not placed in the molecule generation chamber 8, but the bottom of the molecule generation chamber 8 is the crucible 5, and the film forming material a is stored therein. Further, in this embodiment, a single heater 3 is used, and this heater 3 is used for the molecular beam source cell 2.
By heating the entire film, the film-forming material a is evaporated or sublimated to generate molecules, and the re-solidification of released molecules is prevented.

In the molecular beam source cell 2, the molecules of the film forming material a generated in the molecule generating chamber 8 enter the first buffer chamber 9 through the molecule passing holes 6. Further, this molecule enters the second buffer chamber 10 through the molecule passage hole 7. This point is basically the same as the above-described embodiment. In addition to this, in the molecular beam source cell 2 shown in FIGS. 6 and 7, the second buffer chamber 1
A molecular passage cylinder 11 is provided from 0 to the molecular emission port 4 that opens downward from the lower part of the molecular beam source cell 2 through the first buffer chamber 9 and the molecular generation chamber 8. Therefore, the molecules of the film forming material a pass through the molecule passing cylinder 11 from the second buffer chamber 10 and are discharged from the molecule discharge port 4 toward the lower side of the molecular beam source cell 2. FIG. 7 shows the emission direction of molecules. The molecules emitted from the molecule emission port 4 toward the lower side of the molecular beam source cell 2 adhere to the upper surface of the substrate 1 to deposit a thin film.

Molecular beam source cell 2 shown in FIGS. 3 and 4, FIG.
In the molecular beam source cell according to the present invention, as in the molecular beam source cell 2 shown in FIG. 6 or the molecular beam cell 2 shown in FIGS. 6 and 7, molecules are emitted upward or laterally. It has a feature that it can be emitted or emitted downward.

In the above-mentioned embodiment, although the radiation directions of molecules are different, whichever molecular beam source cell 2, 2a, 2b, 2 is used.
Basically, c is also an embodiment in which a plurality of molecular emission ports 4 are arranged in a line, as shown in FIG. 8A.
On the other hand, as shown in FIG. 8B, the molecular emission ports 4 can be arranged in a plurality of rows. Thus, by simultaneously depositing the molecules of the film forming material on a large area of the substrate 1, it becomes possible to efficiently form a thin film on the film forming surface of a large area.

[0041]

As described above, in the molecular beam source cell for thin film deposition according to the present invention, the thin film is formed by moving the solid surface to be formed in a direction orthogonal to the row of the molecular emission ports 4, 4a, 4b, 4c. By depositing, it becomes possible to efficiently deposit a thin film on a large area. Further, the crucibles 5, 5a, 5b, 5c and the molecular emission ports 4, 4a,
A buffer room 9 in which 4b and 4c are one or more small rooms,
10, 9a, 10a, 9b, 10b, 9c, 10c and molecular passage holes 6, 7, 6a, 7a, 6b, 7 leading to them
Since they are communicated via b, 6c, and 7c, even if the clustered molecules of the film-forming materials a, b, and c are scattered due to the so-called spitting phenomenon, these clusters do not reach the film-forming surface of the substrate 1. A film having no defect can be formed.

[Brief description of drawings]

FIG. 1 is a cross-sectional plan view showing an embodiment of a molecular beam source cell for thin film deposition according to the present invention.

FIG. 2 is a vertical sectional side view showing the same embodiment as FIG. 1 of a molecular beam source cell for thin film deposition according to the present invention.

FIG. 3 is a vertical sectional front view showing another embodiment of the molecular beam source cell for thin film deposition according to the present invention.

FIG. 4 is a vertical cross-sectional side view showing the same embodiment as in FIG. 3 of a thin film deposition molecular beam source cell according to the present invention.

FIG. 5 is a vertical sectional side view showing still another embodiment of the molecular beam source cell for thin film deposition according to the present invention.

FIG. 6 is a vertical sectional front view showing another embodiment of the molecular beam source cell for thin film deposition according to the present invention.

7 is a side view showing the radiation direction of molecules in the same embodiment as FIG. 6 of the molecular beam source cell for thin film deposition according to the present invention.

FIG. 8 is a schematic perspective view showing an example of arrangement of molecular emission ports in a thin film deposition molecular beam source cell according to the present invention.

[Explanation of symbols]

3 First heater 3'second heater 4 Molecular emission port 4a Molecular emission port 4b Molecular emission port 4c Molecular emission port 5 crucible 5a crucible 5b crucible 5c crucible 6 molecule passage hole 6a molecule passage hole 6b Molecule passage hole 6c molecule passage hole 7 molecule passage hole 7a Molecule passage hole 7b Molecular passage hole 7c molecule passage hole 8 molecule generation chamber 8a Molecular generation chamber 8b Molecular generation chamber 8c Molecular generation chamber 9 buffer room 9a Buffer chamber 9b Buffer room 9c buffer room 10 buffer room 10a buffer room 10b buffer room 10c buffer room a Film forming material b Film forming material c Film forming material

Claims (7)

[Claims] 1. A film-forming material (a), (b), (c) is heated to heat the film-forming material (a), (b), (c).
In a molecular beam source cell for vacuum vapor deposition, which sublimates or evaporates to generate molecules for growing a thin film on a solid surface,
Crucibles (5), (5a), (5b) and (5c) for accommodating film forming materials (a), (b) and (c) and these crucibles (5), (5a), (5b) and (5b) 5c) heating means for heating the film-forming materials (a), (b), (c) to sublimate or evaporate, and the molecules of the film-forming materials (a), (b), (c). The crucible (5), (5
a), (5b), and (5c), the molecular emission ports (4), (4a), (4b), and (4c) for releasing the molecules generated from the molecular emission ports (4), (4a) ), (4b),
A molecular beam source cell for thin film deposition, wherein a plurality of (4c) are formed in a line or in a plurality of lines. 2. A crucible (5), (5a), (5b), (5)
c) and molecular emission ports (4), (4a), (4b), (4
The buffer chambers (9), (10), (9a), (10a), which are one or more small chambers and do not directly face c),
(9b), (10b), (9c), (10c) and molecular passage holes (6), (7), (6a), (7)
The molecular beam source cell for thin film deposition according to claim 1, which communicates via a), (6b), (7b), (6c), and (7c). 3. A crucible (5), (5a), (5b), (5)
From c), molecular emission ports (4), (4a), (4b), (4)
buffer chambers (9), (10), (9a) leading to c),
(10a), (9b), (10b), (9c), (10
c) are plural, and the crucibles (5), (5a), (5b),
From (5c), molecular emission ports (4), (4a), (4b),
Molecular passage holes (6), (7), (6a) reaching (4c),
(7a), (6b), (7b), (6c), (7c) are oriented in different directions in sequence.
Or the molecular beam source cell for thin film deposition described in 2. 4. The molecular emission ports (4b), (4c) are characterized in that the openings are rotatable so that the emission directions of molecules of the film-forming materials (b), (c) can be changed. The molecular beam source cell for thin film deposition according to any one of claims 1 to 3. 5. A crucible (5), (5a), (5b), (5)
c) is a molecule passage hole (6), (6a), (6b), (6)
buffer chambers (9), (9a), (9b) via c),
Molecule generation chambers (8), (8a), (8) leading to (9c)
The molecular beam source cell for thin film deposition according to any one of claims 1 to 4, wherein the molecular beam source cell is arranged in (b) and (8c). 6. A crucible (5), (5a), (5b), (5)
Molecular generation chambers (8), (8a), (8)
b), (8c) side and film forming materials (a), (b), (c)
Molecular emission ports (4), (4a), (4
b), (4c) side and another heater (3), (3a), (3b), (3c), as heating means, respectively.
The molecular beam source cell for thin film deposition according to claim 5, wherein (3 ′), (3a ′), (3b ′), and (3c ′) are provided. 7. A film forming material (a), (b), (c) is heated to heat the film forming material (a), (b), (c).
By sublimation or evaporation of film forming materials (a), (b), (c)
The molecular beam source cell for thin film deposition according to any one of claims 1 to 6 is used in a thin film deposition method for growing a thin film by generating the molecule of claim 1 and depositing the molecule on a solid surface. A thin film characterized by forming a film by depositing molecules while moving a solid surface to be formed into a film in a direction orthogonal to the rows of the molecule emission ports (4), (4a), (4b) and (4c). Deposition method.