KR100696547B1 - Method for depositing film - Google Patents

Method for depositing film Download PDF

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KR100696547B1
KR100696547B1 KR1020050120913A KR20050120913A KR100696547B1 KR 100696547 B1 KR100696547 B1 KR 100696547B1 KR 1020050120913 A KR1020050120913 A KR 1020050120913A KR 20050120913 A KR20050120913 A KR 20050120913A KR 100696547 B1 KR100696547 B1 KR 100696547B1
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deposition
evaporation
step
substrate
unit
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KR1020050120913A
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Korean (ko)
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김재중
유경태
이정열
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삼성에스디아이 주식회사
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/243Crucibles for source material
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
    • H01L51/0002Deposition of organic semiconductor materials on a substrate
    • H01L51/0008Deposition of organic semiconductor materials on a substrate using physical deposition, e.g. sublimation, sputtering
    • H01L51/001Vacuum deposition
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof

Abstract

A method for depositing a film is provided to minimize an entire size of a deposition system and to facilitate deposition on a substrate of a large area by simply adding a construction to enlarge a path of a transport unit. A method for depositing a film using a deposition unit(130), wherein at least two deposition sources(131,132) each having a deposition material therein are spaced from each other at the deposition unit(130) by a certain distance in an X-axis direction, includes the steps of: (a) moving the deposition unit in a positive direction of a Y-axis perpendicular to the X-axis, with depositing gas of the deposition material emitted from the deposition source(131,132) on a substrate(120); (b) moving the deposition unit in the X-axis direction by a distance smaller than a predetermined distance; and (c) moving the deposition unit in a negative direction of the Y-axis, with depositing the gas of the deposition material emitted from the deposition source on the substrate.

Description

증착 방법{Method for depositing film} Deposition {Method for depositing film}

도 1은 본 발명의 실시예의 증착 방법이 적용되는 증착 시스템의 구성을 도시한 개략적인 단면도이다. 1 is a schematic cross-sectional view showing the configuration of the deposition system to which the embodiment of the deposition method of the present invention is applied.

도 2는 도 1의 Ⅱ-Ⅱ선을 따라 자른 단면도이다. 2 is a cross-sectional view taken along the line Ⅱ-Ⅱ of FIG.

도 3은 본 발명의 실시예에 따른 증착유닛이 구비한 증착원의 개략적인 단면도이다. Figure 3 is a schematic cross-sectional view of the evaporation source is provided with the evaporation unit in the embodiment;

도 4 내지 도 6은 본 실시예의 셔터와 증착원의 관계를 예를 들어 도시한 개략적인 도면이다. 4 to 6 is a schematic view showing an example the relationship between the present embodiment and the evaporation source shutter.

도 7 내지 도 9는 본 발명의 실시예에 따른 증착 방법을 개략적으로 도시한 도면이다. 7 to 9 are diagrams schematically showing the vapor deposition method according to an embodiment of the invention.

도 10은 본 발명의 실시예에 따른 제1차증착층이 기판에 형성된 모습을 개략적으로 도시한 단면도이다. 10 is a cross-sectional view schematically showing a state formed on the first deposited layer substrate according to an embodiment of the invention.

도 11은 본 발명의 실시예에 따른 제1차증착층 및 제2차증착층이 모두 기판에 형성된 모습을 개략적으로 도시한 단면도이다. 11 is the first deposited layer and the second both the primary deposited layer cross-sectional views schematically showing a state formed on a substrate according to an embodiment of the invention.

* 도면의 주요부분에 대한 부호의 설명 * * Description of the Related Art *

110: 진공챔버 120: 기판 110: vacuum chamber 120: substrate

121: 기판홀더 130: 증착유닛 121: board holder 130: evaporation unit

131, 132: 증착원 133, 134: 셔터 131, 132: the evaporation source 133, 134: shutters

140: 마스크 141: 마스크 프레임 140: mask 141: mask frame

150: 이송수단 160: 제1차증착층 150: feeding means 160: the first deposited layer

170: 제2차증착층 170: Second deposition layer

본 발명은 증착 방법에 관한 것으로써, 더욱 상세하게는 균일한 두께의 증착층을 형성할 수 있는 증착 방법에 관한 것이다. The present invention relates to a deposition method, to a deposition method in more detail is to form a deposited layer having a uniform thickness.

일반적으로 유기 전계 발광 소자는 기판 상부에 소정 패턴의 양극층이 형성되고, 이 양극층 상부로 홀수송층, 발광층, 전자수송층 등의 유기막이 순차적으로 형성되며, 이들 유기막의 상부에 상기 양극층과 직교하는 방향으로 소정패턴의 음극층이 형성되어 있는 구조를 갖는다. In general, an organic light emitting element is an anode layer of a predetermined pattern above the substrate is formed, and the organic layer are formed in sequence, such as a hole transport layer, light emitting layer, an electron transporting layer in the positive electrode layer thereon, these organic film above the anode layer and perpendicular to the a cathode layer having a predetermined pattern in a direction that has a structure which is formed.

이러한 구성을 가지는 유기 전계 발광 소자에 있어서, 홀수송층, 발광층, 전자수송층 등 유기박막을 형성시키는 기술로 진공 증착법이 널리 사용된다. In the organic electroluminescent device having such a structure, the vacuum deposition of a hole transport layer, light emitting layer, an electron transporting layer, such as a technique for forming an organic thin film is widely used. 이 진공 증착법은, 내부 압력이 10 -6 내지 10 -7 torr로 조절되는 진공챔버 내부에 증착층을 형성시킬 기판을 위치시키고, 증착유닛을 이용하여 유기물 등의 증착재료를 증발 또는 승화시켜 기판에 증착시키는 방법으로 행해진다. The vacuum deposition method is the internal pressure is to position a substrate to form a deposited layer inside the vacuum chamber is adjusted to 10 -6 to 10 -7 torr, and evaporated or sublimated evaporation materials, such as organic materials on a substrate using an evaporation unit It is carried out by the method of depositing.

상기와 같은 진공 증착법은, 증착시킬 기판의 크기가 커짐에 따라, 상호간에 소정의 간격으로 배치된 복수개의 증착원을 구비한 증착유닛을 구성하고, 그러한 증착유닛을 소정의 방향으로 이동하는 방법을 사용하여 기판의 증착을 수행하여 왔다. A method of vacuum deposition method as described above, makes up a deposition unit comprising a plurality of deposition source arranged at a predetermined interval to each other according to the size of the substrate to deposit becomes large, and the movement of such evaporation unit in a predetermined direction It has been used to perform the deposition of the substrate.

그런데, 그와 같은 종래의 증착 방법은, 복수개의 증착원에서 방출되는 증착재료의 가스가 기판에 증착되는데, 각 증착원이 소정의 거리만큼 이격되어 있으므로, 형성되는 증착층의 두께가 불균일 해진다는 단점이 있었다. By the way, it is conventional deposition methods, such as that is, there is a gas evaporation material emitted from the plurality of evaporation source deposited on the substrate, each of the evaporation source is so spaced apart by a predetermined distance, the thickness of the deposition layer formed unevenness is there were drawbacks. 즉, 증착층이 형성되는 기판의 부분 중 각 증착원의 직상방에 위치한 부분에만 증착층의 두께가 두껍게 되고, 각 증착원의 사이의 공간에 대응하는 기판 부분의 증착층의 두께는 얇게 되어, 기판에 형성되는 증착층의 두께가 불균일해짐으로써, 그 성능이 저하되는 등 여러가지 문제점을 야기하여 왔다. That is, the thicker the thickness of the deposit layer only on portion located immediately above the room in each evaporation source of the portion of the substrate on which the deposition layer is formed, the thickness of the deposited layer of the substrate part corresponding to the space between each vapor source is a thin, It becomes non-uniform as the thickness of the deposition layer formed on the substrate, has been causing various problems such as that the reduced performance.

본 발명은 상기한 바와 같은 문제점들을 해결하기 위하여 안출된 것으로서, 균일한 두께의 증착층을 형성할 수 있는 증착 방법을 제공하는 것을 목적으로 한다. The present invention been made in view of solving the problems as described above, and an object thereof is to provide a deposition method capable of forming a vapor deposition layer of uniform thickness.

위와 같은 목적을 포함하여 그 밖에 다른 목적을 달성하기 위하여, 본 발명은, 증착재료가 수납된 적어도 두개의 증착원을 구비하되 상기 증착원은 상호간에 소정의 거리를 가지도록 X축 방향으로 배치된 증착유닛을 사용한 증착 방법에 있어서, (a) 상기 증착원으로부터 방출되는 상기 증착재료의 가스를 기판에 증착시키면서 상기 X축 방향에 수직인 Y축의 양의 방향으로 상기 증착유닛을 이동시키는 단 계;와, (b) 상기 (a)단계 이후에 상기 증착유닛을 상기 소정의 거리 보다 작은 거리만큼 상기 X축 방향으로 이동시키는 단계;와, (c) 상기 (b)단계 이후에, 상기 증착원으로부터 방출되는 상기 증착재료의 가스를 상기 기판에 증착시키면서 상기 증착유닛을 Y축의 음의 방향으로 이동시키는 단계;를 포함하는 증착 방법을 제공한다. In order to include these purposes In addition to another aspect, the present invention provides a system including at least two evaporation source of the deposited material is housed the evaporation source is to have a predetermined distance between the X-axis disposed in the direction in the deposition method using a vapor deposition unit, (a) step while deposited on a gas substrate of the evaporation material emitted from the evaporation source for moving the evaporation unit in the positive direction of Y axis perpendicular to the X-axis direction; and, (b) moving the evaporation unit to the (a) after the step in the X-axis direction by a smaller distance than the distance of the given; and, (c) wherein (b) after the step, from the evaporation source while the deposition gas in the deposition material to be released to the substrate moving the evaporation unit in the direction of the Y axis negative; provides a deposition method comprising a.

여기서, 상기 증착원은 상기 증착재료를 가열하는 가열수단을 구비하는 것이 바람직하다. Here, the evaporation source is preferably provided with a heating means for heating the evaporation material.

여기서, 상기 (b)단계에서 상기 증착유닛을 상기 X축 방향으로 이동시키는 거리는 상기 소정의 거리의 1/2인 것이 바람직하다. Here, it is preferable that in the step (b), one-half of the distance is the predetermined distance for moving the evaporation unit to the X-axis direction.

여기서, 상기 증착유닛은 상기 증착재료 가스의 방출을 제어하는 셔터를 구비하는 것이 바람직하다. Here, the deposition unit is preferably provided with a shutter which controls the release of said deposition material gas.

여기서, 상기 셔터를 이용하여 제어함으로써, 상기 (c)단계에서 상기 기판에 증착되는 증착재료의 양은 상기 (a)단계에서 상기 기판에 증착되는 증착재료의 양보다 작도록 할 수 있다. Here, by the control by using the timer, in the step (a) the amount of deposition material deposited on the substrate in the step (c) it may be smaller than the amount of deposition material deposited on the substrate.

여기서, 상기 (c)단계에서의 상기 증착유닛의 이동속도를 상기 (a)단계의 증착유닛의 이동속도보다 더 빠르게 함으로써, 상기 (c)단계에서 상기 기판에 증착되는 증착재료의 양은 상기 (a)단계에서 상기 기판에 증착되는 증착재료의 양보다 작도록 할 수 있다. Here, the (c) by making the moving speed of the deposition unit at step faster than the moving speed of the steps of: (a) deposition unit, in the step (c) the amount of deposition material deposited on the substrate wherein (a in) step may be less than the amount of deposition material deposited on the substrate.

여기서, 상기 (b)단계 이후에, 상기 증착유닛의 증착원들 중 상기 기판에 상기 증착재료를 증착시킬 수 없을 정도로 상기 기판으로부터 떨어져 있는 증착원은, 상기 (c)단계에서 상기 증착재료의 가스를 방출하지 않도록 할 수 있다. Here, after the step (b), deposited with enough to the substrate of the evaporation source of the deposition unit is not possible to deposit the vapor deposition materials away from the substrate agent, a gas of the deposition material in the step (c) the emission can be prevented.

이하, 첨부된 도면들을 참조하여 본 발명의 바람직한 실시예를 상세히 설명한다. Reference to the accompanying drawings, will be described a preferred embodiment of the present invention;

도 1은 본 발명의 실시예의 증착 방법이 적용되는 증착 시스템의 구성을 도시한 개략적인 단면도이고, 도 2는 도 1의 Ⅱ-Ⅱ선을 따라 자른 단면도이다. 1 is a schematic configuration cross-sectional view showing the deposition of the system to which the embodiment of the deposition method of the present invention is applied, Figure 2 is a cross-sectional view taken along the line Ⅱ-Ⅱ of FIG.

본 실시예의 증착방법이 적용되는 증착 시스템의 구성은, 진공챔버(110), 기판(120), 증착유닛(130), 마스크(140)를 포함하고 있다. Configuration of the deposition system In this example, the deposition method of the present embodiment is applied, includes a vacuum chamber 110, the substrate 120, the deposition unit 130, the mask 140.

도 1 및 도 2를 참조하여 자세히 살펴보면, 진공챔버(110)의 내부에는 유기물 등의 증착재료를 진공증착하고자 하는 기판(120)이 기판홀더(121)에 장착되고, 기판(120)의 하부에는 증착유닛(130)이 설치된다. 1 and looking in detail with reference to Figure 2, the interior of the vacuum chamber 110, the substrate 120 to be vacuum deposited by the vapor deposition material such as organic material is mounted on the substrate holder 121, a lower portion of substrate 120 has the evaporation unit 130 is installed.

또한, 기판(120)과 증착유닛(130) 사이에는, 기판(120)에 증착층을 증착하고자 하는 패턴과 동일한 패턴의 개구를 가진 마스크(140)가 설치되는데, 마스크(140)는 마스크 프레임(141)에 의해 지지된다. Further, between the substrate 120 and the deposition unit 130, a mask 140 having an opening in the same pattern as the pattern to be deposited by vapor deposition layer to the substrate 120, there is installed, the mask 140 is a mask frame ( It is supported by 141).

증착유닛(130)은 각각 2개의 증착원(131)(132)과 셔터(133)(134)를 구비한다. Deposition unit 130 is provided with the two deposition sources 131 and 132 and shutter 133, 134, respectively.

증착원(131)(132)은 증착재료 가스를 방출하는 기능을 수행하며, 상호간에 소정의 거리(d)를 두고 X축 방향으로 일렬로 배치되어 있다. An evaporation source 131, 132 and functions to discharge a deposition material gas, with a predetermined distance (d) from each other are arranged in a row in the X-axis direction. 여기서, 소정의 거리(d)는 증착재료 가스의 양, 기판(120)의 크기 등을 고려하여, 설계자가 적절히 결정한다. Here, the predetermined distance (d) by considering the size of the amount of the deposition material gas, the substrate 120, the designer has determined appropriately.

본 실시예의 증착유닛(130)은 2개의 증착원(131)(132)을 가지고 있지만, 본 발명은 이에 한정하지 않는다. Example deposition unit 130 of this embodiment has two evaporation source 131 and 132, but the present invention is not limited thereto. 즉, 본 실시예의 증착유닛이 구비하는 증착원의 개수는 특별히 한정되지 않는다. That is, the number of evaporation sources provided in this example the deposition unit of the present embodiment is not particularly limited. 즉, 본 실시예의 증착유닛은 기판의 크기에 따라, 3개, 4개 등의 증착원을 구비할 수도 있다. In other words, the evaporation unit of this embodiment is based on the size of the substrate, and may be provided with a deposition source, such as three, four.

또한, 본 실시예의 증착유닛(130)의 증착원(131)(132)은 X축 방향으로 배열되어 있지만, 본 발명은 반드시 그에 한정하는 것은 아니다. Further, the evaporation source 131 and 132 of an evaporation unit 130 in this embodiment, but are arranged in the X-axis direction, the invention is not necessarily limited thereto. 즉, 본 발명의 증착원들의 배열 방향은 증착유닛의 이동방향과 수직이기만 하면 된다. That is, the arrangement direction of the evaporation source of the present invention is when the evaporation unit and the vertical movement direction as long. 따라서, 만약, 본 발명의 증착유닛이 4개의 증착원을 구비하는 경우에는 X축의 방향으로 4개의 증착원을 배열할 수도 있고, X축의 방향으로 2개의 증착원을 배열하고, 나머지 2개의 증착원은 먼저 배열한 증착원들 뒤에 X축의 방향으로 배열함으로써, 결과적으로는 2×2행렬의 형상으로 배치될 수도 있다. Thus, if, when provided with an evaporation unit, four evaporation source of the present invention may be arranged in the four evaporation source in a direction of the X axis, in the direction of the X axis and arranged in two evaporation source, and the other two evaporation source by arranged in the direction of the X axis after the first one evaporation source array, it may be arranged in the form of a 2 × 2 matrix.

본 실시예의 증착유닛(130)의 셔터(133)(134)는 각 증착원(131)(132)의 상부에 배치되어, 증착원(131)(132)으로부터 방출되는 증착재료 가스의 양을 제어하는 기능을 수행한다. Shutter 133 in the present embodiment the deposition unit 130, 134 is arranged on top of each evaporation source 131 and 132, control the amount of deposition material gas is discharged from the evaporation source 131 and 132 It shall perform the functions.

도 4 내지 도 6은 본 실시예의 셔터와 증착원의 관계를 예를 들어 도시한 개략적인 도면이다. 4 to 6 is a schematic view showing an example the relationship between the present embodiment and the evaporation source shutter. 즉, 도 4는 증착원(131)이 셔터(133)에 의해 차단되지 않고 모두 개방된 경우의 모습을 개략적으로 도시한 도면으로써, 도 4의 경우가 되면 증착원(131)으로부터 방출되는 증착재료 가스가 모두 기판(120)에 증착된다. That is, Figure 4 is an evaporation source 131, the deposition material is released from the shutter 133, an evaporation source 131, when the case of Figure 4 the shape of the case both the opening is not as schematically shown blocked by all gas is deposited on the substrate 120.

또한, 도 5는 증착원(131)이 셔터(133)에 의해 일부 차단된 경우의 모습을 개략적으로 도시한 도면으로써, 도 5의 경우가 되면 증착원(131)으로부터 방출되는 증착재료 가스의 일부만이 기판(120)에 증착되게 된다. In addition, Figure 5 is only a portion of the deposition material gas discharged from a part the appearance of the case are blocked by a schematic view, when the case of Figure 5 the evaporation source 131 by deposition source 131, a shutter 133 It is to be deposited on the substrate 120.

또한, 도 6은 증착원(131)이 셔터(133)에 의해 모두 차단된 경우의 모습을 개략적으로 도시한 도면으로써, 도 6의 경우가 되면 증착원(131)으로부터 방출되는 증착재료 가스의 모두가 기판(120)에 증착되지 않게 된다. Also, FIG. 6, all of the deposition material gas discharged from the evaporation source 131, an evaporation source 131, when the case of Figure 6 as a schematic view showing a state in the case where the blocked by the shutter 133 prevent the deposition on the substrate 120.

본 실시예의 증착유닛(130)은 셔터(133)(134)를 구비하고 있지만, 본 발명은 이에 한정하지 않는다. Although the example deposition unit 130 of this embodiment is provided with a shutter 133, 134, the present invention is not limited thereto. 즉, 본 발명의 증착유닛은 셔터를 구비하지 않아도 된다. That is, the evaporation unit of the invention need not be provided with a shutter. 그 경우, 증착원으로부터 방출되는 증착재료 가스의 양의 제어는 증착유닛의 이동속도와, 가열을 위해 증착원에 투입되는 에너지로 제어할 수 있다. In that case, the amount of control of the deposition material gas discharged from the evaporation source can be controlled by the energy input into the evaporation source for the movement and the heating of the evaporation unit.

이하, 도 3을 참조하여, 증착원(131)(132)의 구체적인 구조를 살펴보도록 한다. With reference to Figure 3, a look at the specific structure of the evaporation source 131 and 132.

도 3은 본 발명의 실시예에 따른 증착유닛이 구비한 증착원의 개략적인 단면도이다. Figure 3 is a schematic cross-sectional view of the evaporation source is provided with the evaporation unit in the embodiment;

본 실시예에서의 2개의 증착원(131)(132)은 동일한 구조를 가지고 있으므로, 그 중 증착원(131)에 대해 설명하기로 한다. Two evaporation source 131 and 132 in this embodiment because it has the same structure, description will be made in the evaporation source 131 of them.

증착원(131)은 용기본체(131a), 가열수단(131b) 및 커버(131c)를 포함하고 있다. Evaporation source 131 includes a container main body (131a), the heating means (131b) and a cover (131c).

용기본체(131a)는 저면이 폐쇄된 구조를 가지고 있기 때문에 내부에 증착재료(131d)을 수납할 수 있는 구조로 되어 있으며, 그 상부에는 개구부(131e)를 구비하고 있다. The container body (131a) has a structure that can hold the evaporation material (131d) therein because it has a lower surface the closed configuration, the upper part and having an opening (131e).

용기본체(131a)는 절연성 및 열방사성이 우수한 알루미나(Al 2 O 3 ), 질화알루 미늄(AlN)과 같은 세라믹 재질로 형성된다. The container body (131a) has the insulation property and heat radiation is formed from a ceramic material such as high alumina (Al 2 O 3), aluminum nitride (AlN).

용기본체(131a)는 수납된 증착재료(131d)의 가열 및 기화가 용이하게 이루어질 수 있도록 원통의 형상으로 형성하는 것이 바람직하고, 개구부(131e)의 크기는 수납되는 증착재료(131d)의 증착 조건 및 증착 상태에 따라 적절한 변형이 가능하다. The container body (131a) is the size of the heating and vaporization, and to easily be formed in the shape of a cylinder to be preferable, an opening (131e) of the accommodating evaporation material (131d) is the deposition conditions of the deposition material (131d) are accommodated and it can be the appropriate modifications depending on the deposition conditions. 여기서, 증착재료(131d)는 전술한 바와 같이 유기 박막의 형성을 위한 유기물, 무기 박막의 형성을 위한 무기물 등일 수 있다. Here, the evaporation material (131d) may be inorganic materials or the like for the formation of an organic substance, an inorganic thin film for forming an organic thin film, as described above.

가열수단(131b)은 용기본체(131a)의 외면을 밀착하여 둘러싸도록 구성되어 있는데, 용기본체(131a)에 수납된 증착재료(131d)를 가열하는 기능을 수행한다. Heating means (131b) is composed so as to contact to surround the outer surface of the container body (131a), and performs a function for heating the deposited material (131d) stored in the container main body (131a).

가열수단(131b)은 용기본체(131a) 내부의 증착재료(131d)를 가열하기 위한 것이면 되고, 그 구조 및 형상에 특별한 제한이 없다. Heating means (131b) are so long as to heat the evaporation material (131d) of the inner container body (131a), there is no particular limitation to its structure and shape. 예를 들면, 용기본체(131a)를 둘러싸는 코일의 형상으로 형성될 수도 있고, 용기본체(131a)의 외벽에 소정의 패턴으로 코팅하여 형성되는 박막 가열수단의 형상으로도 형성될 수 있다. For example, may be formed in the shape of a coil surrounding the container body (131a), may also be formed in the outer wall of the container body (131a) of the thin-film-like heating means is formed by coating in a predetermined pattern.

또한, 본 실시예에서는 용기본체(131a)의 측면부에만 가열수단(131b)이 형성되는 것으로 도시되었으나, 본 발명은 이에 한정하지 않는다. In this embodiment, although shown as a heating means (131b) are formed only on the side face of the container body (131a), the present invention is not limited thereto. 즉, 본 발명에 따른 가열수단은 용기본체(131a)의 외부 바닥면에도 추가로 형성될 수 있다. That is, the heating means according to the invention can be further formed in the outer bottom surface of the container body (131a).

커버(131c)는 용기본체(131a)의 상부에 위치하여 개구부(131e)를 덮도록 되어 있으며, 열방사성이 우수한 알루미나(Al 2 O 3 ), 질화알루미늄(AlN)과 같은 세라믹 재질로 형성된다. Cover (131c) is formed from a ceramic material, such as the container main body (131a) upper opening portion (131e) it is to cover and alumina columns radioactive excellent (Al 2 O 3) located in the aluminum nitride (AlN).

커버(131c)는 노즐(131f)을 구비하고 있는데, 그 노즐(131f)로는 기화되거나 승화된 증착재료 가스가 토출된다. Cover (131c) there is provided with a nozzle (131f), the nozzle (131f) roneun vaporization or sublimation of the deposition material gas is discharged.

본 실시예에서의 용기본체(131a)와 커버(131c)는 세라믹의 재질로 되어 있지만, 본 발명은 이에 한정되지 않는다. The container body (131a) and a cover (131c) in the present embodiment, but is in the ceramic material, the invention is not limited to this. 즉, 본 발명의 용기본체와 커버의 재질은 열방사성 및 내열성이 우수한 재질로 이루어지면 되고, 그 외의 특별한 제한은 없다. That is, the material of the container body and the cover of the invention is achieved when the material is in good heat radiation and heat resistance, there is no other particular limitation. 즉, 예를 들면, 용기본체 및 커버는 열방사성이 우수한 티타늄과 같은 금속 재질로 이루어져도 된다. That is, for example, the container body and the cover is also made of a metal material such as titanium having excellent heat radiation. 또한, 용기본체는 세라믹으로 형성되고, 커버는 금속의 재질로 형성되는 것과 같이, 용기본체와 커버가 각각 상이한 재료로 이루어져도 된다. Further, the container body is formed of ceramic, the cover may be made of different materials, each of the container main body and the cover is formed as a material of the metal.

마찬가지로, 증착원(132)도 동일한 구조의 용기본체, 가열수단, 커버, 증착재료, 개구부 및 노즐을 구비한다. Similarly, the evaporation source 132 is also provided with the same structure as the container main body, heating means, the cover, the deposition material, and a nozzle opening.

이상과 상기와 같은 구성을 가지는 증착유닛(130)의 하부에는 증착유닛(130)을 이동시키기 위한 이송수단(150)이 구비된다. The lower portion of the deposition unit 130 has the same configuration as the above and is provided with a transfer means 150 for moving the evaporation unit 130.

이송수단(150)은 증착유닛(130)의 직선운동이 가능하도록 구성되고, 컨베이어 벨트 시스템, 레일이 설치되고 바퀴를 이용하여 이동하는 이송 시스템 등으로 구성이 가능한데, 증착유닛(130)을 이송시킬 수 있으면, 그 이송 기구 구성에 특별한 제한은 없다. Transfer means 150 is configured to allow linear motion of the deposition unit 130, are possible this construction to the conveyor belt system, a transport system, such as the rail is installed and serviced by the wheel, to transfer the deposition unit 130 If you can, there is no particular limitation on the transfer mechanism configured.

이하, 도 7 내지 도 9를 참조하여, 본 실시예에 따른 기판의 증착 방법에 대해 살펴보기로 한다. With reference to FIG. 7 to FIG. 9 to be described in detail deposition process of a substrate according to this embodiment.

도 7 내지 도 9는 본 발명의 실시예에 따른 증착 방법을 개략적으로 도시한 도면이다. 7 to 9 are diagrams schematically showing the vapor deposition method according to an embodiment of the invention.

우선, 진공챔버(110)의 내부에 진공증착하고자 하는 기판(120)이 증착위치로 배치되면, 마스크(140)가 기판(120)에 밀착되게 된다. First, when the substrate 120 is disposed at a deposition location to be vacuum deposited on the inside of the vacuum chamber 110, a mask 140 is to be in close contact with the substrate 120.

이 후, 기판(120)에 증착을 수행하게 되는데, 다음과 같이 크게 (a)단계, (b)단계, (c)단계를 거쳐 증착을 수행하게 된다. Thereafter, there is carried out a vapor deposition on the substrate 120, is via a large step (a), (b) step, (c) step, as follows: perform the deposition.

먼저, (a)단계는, 도 7에 도시된 바와 같이, 증착유닛(130)이 기판(120)에 증착을 수행하면서, 동시에 Y축의 양(+)의 방향으로 이동하게 되는 단계이다. First, (a) step, is a step that is moved at the same time in the direction of the Y-axis positive and, the evaporation unit 130 is performing the deposition on a substrate 120 as shown in FIG.

즉, 증착을 위해 증착원(131)(132)의 가열수단(131b)(132b)이 작동하게 되는데, 증착원(131)(132)은 셔터(133)(134)에 의해 차단되지 않고 완전히 개방되어 있으므로, 증착재료(131d)(132d)의 가스가 증착원(131)(132)의 외부로 방출되어, 기판(120)의 증착이 이루어지게 된다. That is, the heating means (131b), (132b) of the evaporation source 131 and 132 there is work for the deposition, the evaporation source 131 and 132 are completely open without being blocked by the shutter 133, 134 it is, is discharged to the outside of the evaporation material (131d) (132d) the gas evaporation source 131 and 132, the deposition of the substrate 120 will be written. 그와 동시에, 증착유닛(130)은 이송수단(150)에 의해 소정의 속도로 Y축의 양의 방향으로 이동하게 된다. At the same time, the evaporation unit 130 is moved in the positive direction of the Y-axis at a predetermined speed by the transfer means 150. 여기서, 소정의 속도란 증착되는 증착층이 설계자가 결정한 두께를 가질 수 있을 정도의 속도를 의미하고, Y축의 양의 방향은 증착원(131)(132)이 배열되는 방향인 X축 방향에 수직인 방향을 의미한다. Here, the normal to the predetermined speed is in the degree rate of have a number of designers to have a determined thickness of the deposition layer is deposited, and the direction of the positive direction of the Y axis is the evaporation source 131 and 132 which are arranged in the X axis direction It refers to a direction.

이와 같은 방식으로, (a)단계를 거치게 되면, 도 10에 도시된 바와 같이 소정두께의 제1차증착층(160)이 기판(120)에 형성되게 된다. If this way, subjecting the (a) step, a first deposition layer 160 of a predetermined thickness as shown in Figure 10 is to be formed on the substrate 120. 여기서, 제1차증착층(160)은 두 개의 증착층(161)(162)으로 이루어지는데, 증착층(161)은 증착원(131)의 증착에 의한 것이고, 그에 이웃하는 증착층(162)은 증착원(132)의 증착에 의한 것이다. Here, the first deposition layer 160 has two deposited layers deposited layer 161, makin composed of 161 162, will by the deposition of the deposition source 131, the deposition layer 162 adjacent thereto is due to the deposition of the deposition source 132. the 증착층(161)(162) 사이에는 오목한 부분(163)이 존재하는데, 이는 증착원(131)(132)이 서로 소정의 거리(d)를 두고 배치되기 때문에 증착이 균일하게 이루어지지 않기 때문이다. Between the vapor deposition layer 161, 162 is to present a concave portion 163, which is because the deposited not uniformly done because the evaporation source 131 and 132 to each other with a predetermined distance (d) disposed .

그 다음, (b)단계는 (a)단계 이후에 수행되는데, 도 8에 도시된 바와 같이, 이송수단(150)을 이용하여 증착유닛(130)을 X축 방향으로 이동시키는 단계이다. Then, (b) step is a step of moving the evaporation unit 130, by using a transfer means 150 as described (a) is performed after the step, shown in Figure 8 in the X-axis direction.

즉, 증착유닛(130)을 이송수단(150)을 이용하여 X축 방향으로 이동시키되, 그 이동거리(t)는 증착원(131)(132) 사이의 상기 소정의 거리(d)의 1/2이 되도록 이동시킨다. That is, sikidoe moved in the X-axis direction by the transfer using the means 150 of the deposition unit 130, the moving distance (t) is one of the evaporation source 131 and 132 the predetermined distance (d) between / 2 is moved so that the. 이동거리(t)를 증착원(131)(132) 사이의 상기 소정의 거리(d)의 1/2이 되도록 하는 이유는, 다음의 (c)단계에서 제1차증착층(160)의 오목한 부분(163)에 증착원(131)으로 보강증착을 행하고자 하기 때문이다. The reason for the moving distance (t) such that half of the evaporation source 131 and 132 the predetermined distance (d) between the concave of the following step (c) of the first deposition layer 160 It is due to the portion 163 to the reinforcement to line deposited in the evaporation source 131.

본 실시예의 (b)단계에서 X축 방향으로 이동되는 증착유닛(130)의 이동거리(t)는 증착원(131)(132) 사이의 상기 소정의 거리(d)의 1/2이 되도록 하나, 본 발명은 이에 한정되지 않는다. Movement of the embodiment (b) the evaporation unit 130 is moved in the X-axis direction from the phase distance (t) is such that one half of the evaporation source 131 and 132 the predetermined distance (d) between the the invention is not limited to this. 즉, 본 발명의 (b)단계에서 X축 방향으로 이동되는 증착유닛(130)의 이동거리(t)는, 상기 소정의 거리(d) 보다 작게 됨으로써 제1차증착층(160)의 보강증착을 수행할 수 있기만 하면 되고, 반드시 상기 소정의 거리(d)의 1/2이 되지 않아도 된다. That is, the moving distance (t) of the deposition unit 130 is moved in the X-axis direction from the (b) step of the present invention, the reinforcing deposition of the first deposition layer (160) being smaller than said predetermined distance (d) When a long as it can be carried out, there is no need necessarily to be a half of said predetermined distance (d).

한편, (b)단계에서는 증착이 이루어지지 않으므로, 셔터(133)(134)로 증착원(131)(132)을 막아, 증착재료 가스를 증착유닛(130)으로부터 방출되지 않도록 제어한다. On the other hand, (b) step, the deposition is controlled so does not occur, and stopped the evaporation source 131 and 132 to the shutter 133, 134, the deposition material gas is not released from the evaporation unit 130.

그 다음, (c)단계는 (b)단계 이후에 수행되는데, 도9에 도시된 바와 같이, 증착유닛(130)의 증착원(131)이 기판(120)에 증착을 수행하면서, 동시에 Y축의 음(-)의 방향으로 이동하게 되는 단계이다. Then, (c) step (b) is performed after step, as shown in Figure 9, while performing vapor deposition in the evaporation source 131, the substrate 120 of the deposition unit 130, while the Y-axis a stage that is moved in the direction of-sound ().

즉, 이송수단(150)을 이용하여, 증착유닛(130)을 Y축의 음의 방향으로 이동 시키는 동시에, 증착원(131)에서 방출된 증착재료(131d)의 가스를 기판에 증착시킨다. That is, by using a transfer means 150, and at the same time moving the evaporation unit 130 in the direction of the Y-axis negative, to deposit the gas in the deposited material (131d) emitted from the evaporation source 131 to the substrate. 여기서, Y축의 음의 방향이란, (a)단계에서의 증착유닛(130)의 이동방향인 Y축의 양의 방향과 반대 방향을 의미한다. Here, the direction of the Y axis is negative, (a) stage means that the movement direction of the Y-axis positive direction opposite to that of the evaporation unit 130 in the direction.

여기서, 증착원(132)은 구동되나, 그로부터 발생하는 증착재료(132d)의 가스는 기판(120)에 증착되지 않는다. Here, the evaporation source 132 is a gas of the deposition material (132d), but which is driven, generating therefrom is not deposited on the substrate 120. 이는, (b)단계에서 증착유닛(130)을 X축 방향으로 이동시킴에 의해, 증착원(132)의 위치가 X축 방향으로 충분히 기판(120)으로부터 떨어져 있기 때문인데, 따라서, 이때는 셔터(134)를 이용하여 증착원(132)으로부터 발생되는 증착재료(132d)의 가스를 차단한다. This is because it away from (b) sufficiently to position the direction of the X axis of the evaporation source 132 by movement of the evaporation unit 130 in the X-axis direction stage substrate 120, therefore, that case shutter ( using a 134) blocks the gas of the deposition material (132d) generated from the evaporation source 132.

본 실시예의 (c)단계에서는 셔터(134)를 이용하여 증착원(132)으로부터 발생되는 증착재료(132d)의 가스를 차단하나, 본 발명은 이에 한정되지 않는다. The embodiment (c) step, the one with the shutter 134 blocks the gas of the deposition material (132d) generated from the evaporation source 132, the invention is not limited to this. 즉, 본 발명은 증착원(132)에 에너지의 공급을 중단함으로써, 증착재료의 가스의 발생 자체를 중단시킬 수도 있다. That is, the present invention is also possible by stopping the supply of energy to the evaporation source 132, stops the generation of gases of the deposition material itself.

또한, 본 (c)단계에서 증착되는 증착재료의 양은 상기 (a)단계에서 증착되는 증착재료의 양보다 적은데, 이는 본 (c)단계에서의 증착은 단지 제1차증착층(160)의 두께를 균일하게 하는 목적만을 가지기 때문이다. Further, the amount of the deposition material to be deposited in the step (c) jeokeunde than the amount of deposition material deposited in step (a), which is present (c) deposited in step is only the thickness of the first deposition layer 160 because the only purpose of gajigi uniformly. 따라서, 이를 위해 셔터(133)를 이용하여 증착재료의 양을 조절한다. Thus, by using a shutter 133. For this purpose, controls the amount of deposited material.

본 실시예의 (c)단계에서는 셔터(133)를 이용하여 증착재료 가스의 양을 조절함으로써, 증착되는 증착층의 두께를 조절하지만, 본 발명은 이에 한정하지 않는다. The embodiment (c) step, by controlling the amount of deposition material gas by using the shutter 133, and controls the thickness of deposited layer is deposited, but the present invention is not limited thereto. 즉, 본 발명에 따르면 이동하는 증착유닛의 속도를 조절함으로써, 증착되는 증착재료 가스의 양을 조절할 수 있다. That is, according to the present invention by adjusting the speed of the evaporation unit to move, it is possible to control the amount of deposition material gas is deposited. 즉, 증착유닛의 속도를 빠르게 하면 증착되는 시간이 그만큼 줄게 되므로, 증착되는 증착재료의 양을 줄일 수 있고, 증착유닛의 속도를 느리게 하면 증착되는 시간이 그만큼 늘어나게 되므로, 증착되는 재료의 양을 늘일 수 있게 된다. That is, since when speed the evaporation unit the time that deposition so ll, it is possible to reduce the amount of the deposited evaporation material, since you slow down the evaporation unit the time deposit much increase, increase the amount of material to be deposited It can be so.

이와 같은 방식으로, (c)단계를 거치게 되면, 도 11에 도시된 바와 같이 소정 두께의 제2차증착층(170)이 기판(120)에 형성되게 된다. If this way, subjecting the (c) step, the second deposition layer 170 of a predetermined thickness as shown in Figure 11 is to be formed on the substrate 120. 여기서, 제2차증착층(170)은 제1차증착층(160)의 오목한 부분(163)에 증착됨으로써, 제1차증착층(160)의 불균일한 두께를 보정할 수 있게 된다. Here, the second deposition layer 170 will be able to correct the non-uniform thickness of the first deposition layer 160 is recessed by being deposited on the portion 163, the first deposited layer 160 of the.

이상과 같이, 본 실시예에 따른 증착 방법은, 2개의 증착원(131)(132)을 가지는 증착유닛(130)을 사용하고, 상기 (a), (b), (c)단계를 순차적으로 수행함으로써, 기판(120)에 균일한 두께의 증착층을 형성할 수 있는 장점이 있다. As described above, the deposition method according to the present embodiment, the two evaporation sources 131 and 132 using a deposition unit 130, the (a), (b), and step (c) having a sequentially It does have the advantage of, to form a deposited layer having a uniform thickness on the substrate 120 by.

상술한 바와 같은 본 발명에 따르면 다음과 같은 효과를 얻을 수 있다. According to the invention as described above, the following effects can be obtained.

첫째, 본 발명에 따른 증착 방법을 이용하면, 복수개의 증착원을 구비한 증착유닛을 이동시켜 증착함에 있어서, 균일한 두께의 증착층을 기판에 형성할 수 있는 효과가 있다. First, the use of a deposition method according to the present invention, there is provided of moving the evaporation unit provided with a plurality of evaporation source is deposited by evaporation, it is capable of forming a vapor deposition layer of uniform thickness to the substrate effect.

둘째, 본 발명에 따른 증착 방법을 이용하면, 균일한 두께의 증착층을 형성하기 위한 설비가 간단히 구성될 수 있으므로, 증착유닛 및 증착 시스템의 소형화를 이룰 수 있다. Second, the use of a deposition method according to the invention, since the equipment can be easily configured for forming a deposition layer of uniform thickness, it is possible to achieve the downsizing of the evaporation unit and a deposition system.

셋째, 본 발명에 따른 증착 방법을 이용하면, 증착유닛의 증착원의 수를 증가시키고, 이송수단의 경로를 늘리는 구성을 단순히 추가함으로써, 대면적의 기판 의 증착도 용이하게 수행할 수 있다는 효과가 있다. Third, the use of a deposition method according to the invention, increasing the number of evaporation sources of the deposition unit and, by simply adding a structure to increase the path of the transfer means, the effect of the deposition can be easily carried out in a large-area substrate have.

넷째, 본 발명에 따른 증착 방법을 디스플레이 장치에 적용되는 유기물의 박막 형성에 적용한다면, 균일한 유기박막의 형성이 가능하게 되므로, 유기박막의 수명, 효율, 구동을 위한 전압의 산포를 제거할 수 있는 효과가 있다. Fourth, if applying the deposition method according to the invention for forming a thin film of organic material applied to the display device, so enabling the formation of a uniform organic thin film, to remove the life, efficiency, distribution of the voltage for driving the organic thin film that there is an effect.

본 발명은 첨부된 도면에 도시된 일 실시예를 참고로 설명되었으나 이는 예시적인 것에 불과하며, 당해 기술분야에서 통상의 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 타 실시예가 가능하다는 점을 이해할 수 있을 것이다. The present invention has been described the embodiment illustrated in the accompanying drawings, an example with reference to which to understand that it is only, and those skilled in the art from which the various modifications and equivalent other embodiments can be as illustrative It will be. 따라서 본 발명의 진정한 보호 범위는 첨부된 청구 범위에 의해서만 정해져야 할 것이다. Therefore, the true scope of the present invention as defined only by the appended claims.

Claims (7)

  1. 증착재료가 수납된 적어도 두개의 증착원을 구비하되, 상기 증착원은 상호간에 소정의 거리를 가지도록 X축 방향으로 배치된 증착유닛을 사용한 증착 방법에 있어서, In the deposition process, but the deposition material is provided with at least two evaporation source housing, wherein the evaporation source is used for the evaporation unit arranged in the X-axis direction so as to have a predetermined distance from each other,
    (a) 상기 증착원으로부터 방출되는 상기 증착재료의 가스를 기판에 증착시키면서, 상기 X축 방향에 수직인 Y축의 양의 방향으로 상기 증착유닛을 이동시키는 단계; (A) step of the gas while depositing a base plate of the evaporation material emitted from the evaporation source, moving the evaporation unit in the positive Y-axis perpendicular to the X-axis direction;
    (b) 상기 (a)단계 이후에, 상기 증착유닛을 상기 소정의 거리 보다 작은 거리만큼 상기 X축 방향으로 이동시키는 단계; (B) the step of after step (a), moving the evaporation unit to the X-axis direction by a distance smaller than the distance of the predetermined;
    (c) 상기 (b)단계 이후에, 상기 증착원으로부터 방출되는 상기 증착재료의 가스를 상기 기판에 증착시키면서, 상기 증착유닛을 Y축의 음의 방향으로 이동시키는 단계를 포함하는 증착 방법. (C) deposition method comprising the step of: after the step (b), while the deposition gas in the deposition material discharged from the evaporation source to the substrate, moving the evaporation unit in the direction of the Y axis negative.
  2. 제1항에 있어서, According to claim 1,
    상기 증착원은 상기 증착재료를 가열하는 가열수단을 구비한 증착 방법. The evaporation source is a deposition method having a heating means for heating the evaporation material.
  3. 제1항에 있어서, According to claim 1,
    상기 (b)단계에서 상기 증착유닛을 상기 X축 방향으로 이동시키는 거리는 상기 소정의 거리의 1/2인 증착 방법. In step (b), the distance of the evaporation method 1/2 of the predetermined distance for moving the evaporation unit to the X-axis direction.
  4. 제1항에 있어서, According to claim 1,
    상기 증착유닛은 상기 증착재료 가스의 방출을 제어하는 셔터를 구비하는 증착 방법. The evaporation unit is a vapor deposition process having a shutter which controls the release of said deposition material gas.
  5. 제4항에 있어서, 5. The method of claim 4,
    상기 셔터를 이용하여 제어함으로써, 상기 (c)단계에서 상기 기판에 증착되는 증착재료의 양은 상기 (a)단계에서 상기 기판에 증착되는 증착재료의 양보다 작도록 하는 증착 방법. How to control the deposition by using the timer, in the step (a) the amount of deposition material deposited on the substrate in the step (c) to be less than the amount of deposition material deposited on the substrate.
  6. 제1항에 있어서, According to claim 1,
    상기 (c)단계에서의 상기 증착유닛의 이동속도를 상기 (a)단계의 증착유닛의 이동속도보다 더 빠르게 함으로써, 상기 (c)단계에서 상기 기판에 증착되는 증착재료의 양은 상기 (a)단계에서 상기 기판에 증착되는 증착재료의 양보다 작도록 하는 증착 방법. The step (c) The amount of the (a) step of the deposition material to be deposited on the substrate the moving speed of the evaporation unit in the further, the step (c) by faster than the moving speed of the step (a), the evaporation unit of the in in the deposition method to be smaller than the amount of deposition material deposited on the substrate.
  7. 제1항에 있어서, According to claim 1,
    상기 (b)단계 이후에, 상기 증착유닛의 증착원들 중 상기 기판에 상기 증착재료를 증착시킬 수 없을 정도로 상기 기판으로부터 떨어져 있는 증착원은, 상기 (c)단계에서 상기 증착재료의 가스를 방출하지 않도록 하는 증착 방법. The step (b) Thereafter, the evaporation source in extent to the substrate of the evaporation source of the deposition unit is not possible to deposit the vapor deposition materials away from the substrate, (c) discharging the gas in the deposition material in step deposition method to avoid.
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US8536057B2 (en) 2009-06-25 2013-09-17 Samsung Display Co., Ltd. Thin film deposition apparatus and method of manufacturing organic light emitting device by using the same
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