JP4251857B2 - Vacuum film forming apparatus and vacuum film forming method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a vacuum film forming apparatus, and more particularly to a vacuum film forming apparatus that forms an organic thin film used for an organic LED element by vapor deposition.
[0002]
[Prior art]
In recent years, organic LED elements have attracted attention as elements for full-color panel flat panel displays. An organic LED element is a self-luminous element that emits light by exciting a fluorescent organic compound electrically. It has high brightness, high viewing angle, surface light emission, thin and multicolor emission, and low voltage of several volts. This is an all-solid-state device that emits light when a direct current is applied, and has a feature that its characteristic change is small even at a low temperature.
[0003]
FIG. 10 is a perspective view showing a schematic configuration of a conventional vacuum film forming apparatus, FIG. 11A is a perspective view showing a schematic configuration of a main part of the conventional vacuum film forming apparatus, and FIG. It is a graph which shows the state of the film thickness distribution of the board | substrate support part vicinity at the time of forming into a film with this vacuum film-forming apparatus.
[0004]
As shown in FIG. 10, in this vacuum film forming apparatus 101, a pair of vapor deposition sources 103a and 103b are disposed in the lower part in the vacuum chamber 102, and a substrate holder is disposed in the upper part in the vapor deposition sources 103a and 103b. A substrate 110 supported by 104 is arranged.
[0005]
An organic thin film having a predetermined pattern is formed on the substrate 110 by the vapor of the organic material evaporated by the vapor deposition sources 103a and 103b while rotating the substrate 110.
[0006]
[Patent Document 1]
Japanese Patent Application Laid-Open No. 11-124667
[Problems to be solved by the invention]
However, the conventional vacuum film forming apparatus has a problem that the film thickness does not become uniform in the vicinity of the end portion of the portion supporting the substrate or the mask.
That is, as shown in FIG. 11B, for example, in the vicinity of the substrate support portion 104a of the substrate holder 104, there is a problem that the film thickness of the end portion 120 of the film becomes thin due to the influence of the substrate support portion 104a.
[0008]
The present invention has been made in order to solve the problems of the conventional technique, and a vacuum film forming apparatus capable of reducing the influence on the film thickness distribution by the end portions of the substrate support portion, the mask and the like. The purpose is to provide.
[0009]
[Means for Solving the Problems]
The invention described in claim 1 made to achieve the above object is a vacuum film forming apparatus for forming a film by vapor deposition on a substrate in a vacuum through a rectangular mask on which a predetermined pattern is formed. A substrate rotating means for rotating the substrate by 90 ° in a horizontal plane and a moving means for relatively linearly moving a vapor deposition source for performing the vapor deposition in two different directions parallel to the substrate.
According to a second aspect of the present invention, in the first aspect of the present invention, a pair of the evaporation sources are arranged at intervals in a direction orthogonal to the two different directions.
According to a third aspect of the present invention, in the second aspect of the present invention, each of the evaporation sources is provided with a shutter.
According to a fourth aspect of the present invention, in the first aspect of the present invention, the evaporation source is provided with a lid portion extending in a direction orthogonal to the two different directions.
The invention according to claim 5 is a vacuum film forming method for forming a film using the vacuum film forming apparatus according to claim 1, wherein the evaporation is performed while linearly moving the evaporation source parallel to the substrate. A first vapor deposition step and a substrate rotation step of rotating the substrate by 90 ° in a plane including the substrate.
The invention according to claim 6 is the invention according to claim 5, wherein an angle formed by a moving direction of the vapor deposition source in the first vapor deposition step and a moving direction of the vapor deposition source in the second vapor deposition step is 180 °. It is.
[0010]
The inventors of the present invention, when the deposition source is moved relatively parallel and linearly with respect to the substrate during the deposition, the particles of the evaporation material sufficiently wrap around the substrate in the direction orthogonal to the moving direction of the deposition source. It has been found that the film thickness distribution in the vicinity of the support and the edge of the mask can be made uniform.
[0011]
According to the present invention, the film is deposited near the end portions (edge portions) of the substrate support and the mask by performing the vapor deposition while relatively moving the vapor deposition source in a plurality of different directions relative to the substrate. It becomes possible to make the thickness distribution uniform.
[0012]
In the vacuum film forming apparatus of the present invention, if the substrate rotating means for rotating the substrate and the evaporation source moving means for linearly moving the evaporation source are provided, the evaporation source is different from the substrate with a simple and small configuration. It becomes possible to move relatively linearly in a plurality of directions.
[0013]
Then, in the first vapor deposition step, vapor deposition is performed while linearly moving the vapor deposition source in parallel with the substrate, and in the substrate rotation step, the substrate is rotated by a predetermined angle within a plane including the substrate, and the second vapor deposition is performed. If vapor deposition is performed while linearly moving the vapor deposition source in parallel with the substrate in the process, it is possible to efficiently form a film.
[0014]
In particular, if the substrate is rotated by 90 ° in the substrate rotation process, the film thickness distribution in the vicinity of each end (edge) of the mask is reliably uniformed when the film is formed using a rectangular mask. be able to.
[0015]
Furthermore, if the angle formed by the movement direction of the vapor deposition source in the first vapor deposition process and the movement direction of the vapor deposition source in the second vapor deposition process is 180 °, the vapor deposition source in the first vapor deposition process and the second vapor deposition process. Since the movement range is the same, the apparatus can be downsized.
[0016]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
1 is an overall perspective view of a vacuum processing apparatus having a vacuum film forming apparatus according to an embodiment of the present invention, FIG. 2 is a schematic configuration diagram of the vacuum film forming apparatus, and FIG. It is a schematic block diagram which shows the substrate holder and vapor deposition source which are arrange | positioned.
[0017]
As shown in FIG. 1, a vacuum processing apparatus 1 to which the present invention is applied is a multi-chamber type single wafer type apparatus, and a substrate 10 is placed around a vacuum robot chamber 2 with a substrate transfer apparatus 3. A connecting portion 5 for performing exchanges and vapor deposition chambers 5, 6 and 7 for forming an organic vapor deposition film on the substrate 10 are provided.
[0018]
The vacuum robot chamber 2 and the vapor deposition chambers 5, 6 and 7 are connected to an evacuation system (not shown) having a vacuum pump and the like, and the substrate 10 is formed by a vacuum robot (not shown) provided in the vacuum robot chamber 2. Is configured to be conveyed between the vapor deposition chambers 5, 6 and 7.
[0019]
As shown in FIG. 2, the vacuum film forming apparatus 20 of the present embodiment is provided in the vapor deposition chambers 5, 6 and 7, and is placed in a vacuum chamber 21 provided on a movable base 30. The evaporation source 22 and the substrate holder 23 (substrate rotating means) are provided, and an evaporation source moving mechanism 24 (deposition source moving means) is provided outside the vacuum chamber 21.
[0020]
The substrate holder 23 has a substrate support portion 23a that horizontally supports, for example, the flat rectangular substrate 10, and the substrate support portion 23a is configured to rotate by a predetermined angle in the horizontal direction by driving a motor (not shown). ing.
[0021]
As shown in FIG. 3, a mask 25 having a predetermined pattern 25 a is disposed on the substrate holder 23, and an organic material that evaporates from the vapor deposition source 22 through the pattern 25 a formed on the mask 25 is the substrate 10. It is designed to be deposited on the surface.
[0022]
The vapor deposition source 22 of the present embodiment is of a linear source type, and has a host vapor deposition source 22a and a dopant vapor deposition source 22b. Then, the deposition source 22b for deposition source 22a and a dopant for these hosts, by driving the evaporation source moving mechanism 24, and is configured to linearly move integrally horizontally (arrow X ₁ or X ₂ direction) Yes.
[0023]
In the present embodiment, the evaporation source 22 is relatively translated in two different directions with respect to the substrate 10 by the rotation of the substrate 10 and the movement of the evaporation source 22 in the linear direction.
[0024]
FIG. 4 is an exploded perspective view showing the configuration of the vapor deposition source and the vapor deposition source moving mechanism of the present embodiment.
As shown in FIG. 4, the vapor deposition source 22 of this Embodiment is attached on the moving vacuum vessel 22c.
[0025]
Deposition source moving mechanism 24 includes a pair of guide members 24a of the vacuum chamber 21 outside of the base 30 direction of arrow X on (X ₁ or X ₂ direction) are arranged in parallel along the the straight and 24b The hollow cylindrical bellows 24c is positioned along the guide members 24a and 24b.
[0026]
The bellows 24c has an expandable portion 24d that engages with a guide roller 24e extending in the arrow X direction inside the vacuum chamber 21 and moves in the arrow X direction. The stretchable portion 24d of the bellows 24c is attached to the moving vacuum vessel 24b of the deposition source 22 through the vacuum inlet portion 24 g, thereby adapted to move the deposition source 22 in the arrow X ₁ or X ₂ direction .
[0027]
A wiring 24f connected to a control unit (not shown) is provided inside the bellows 24b, and the wiring 24f is connected to each part of the vapor deposition source 22 through a vacuum introduction unit 24g.
[0028]
FIG. 5 is an exploded perspective view showing another example of the vapor deposition source used in the present invention.
The evaporation source 32 of this example is driven by the above-described evaporation source moving mechanism 24, and is configured to store the evaporation substance in cylindrical evaporation containers 32a and 32b.
[0029]
In the vapor deposition source 32 of this example, a shutter 32c and a film thickness monitor 32d are provided in the vicinity of each of the evaporation containers 32a and 32b.
[0030]
Hereinafter, the operation of the vacuum film forming apparatus 1 according to the present embodiment will be described using the vapor deposition source shown in FIG.
6A and 6B are perspective views for explaining the principle of the vacuum film forming apparatus of the present invention.
When vapor deposition is performed on a substrate in the apparatus shown in FIGS. 6A and 6B, conditions such as the pressure and temperature in the vacuum chamber 21 described above are set to predetermined values, and the evaporation containers 32a and 32b Start heating the vapor deposition material.
Then, when a predetermined evaporation rate is obtained, the shutter 32c is opened and vapor deposition is started.
[0031]
Furthermore, as shown in FIG. 6 (a), it is horizontally linearly moved to a predetermined position in the X ₁ direction to the evaporation source 22 by driving the extensible portion 24d of the bellows 24c passes directly under the substrate holder 23.
[0032]
Thereafter, as shown in FIG. 6 (b), the deposition source 24 by the horizontal linear movement in the X ₂ direction back to the original position, thereby the processing of one step is completed.
[0033]
7A and 7B are cross-sectional views showing the shape of the vapor deposition film formed on the substrate, and FIG. 7A is a cross-sectional view taken along the Y direction, which is a direction perpendicular to the moving direction of the vapor deposition source. FIG. 7B is a cross-sectional view taken along the X direction, which is a direction parallel to the moving direction of the vapor deposition source.
[0034]
In FIG. 7A, a film thickness curve A shows the film thickness distribution when the substrate 10 is deposited while rotating as in the prior art, and the film thickness curve B is shown in FIGS. 6A and 6B. As shown in FIG. 2, the film thickness distribution is shown when the deposition is performed while the deposition source 22 is linearly moved without rotating the substrate 10.
[0035]
As is clear from the film thickness curves A and B in FIG. 7A, the film thickness distribution is more uniform when the vapor deposition is performed while the vapor deposition source 22 is moved in the linear direction than when the vapor deposition is performed while the substrate 10 is rotated. And a better film can be formed.
[0036]
However, as shown in the film thickness curve C in FIG. 7B, with respect to the moving direction of the vapor deposition source 22, the end of the film in the vicinity of the substrate support 23a is inclined and the film thickness distribution is not uniform.
[0037]
FIGS. 8A and 8B are perspective views for explaining the operation of the vacuum film forming apparatus according to the embodiment of the present invention.
[0038]
Also in the present embodiment, first, conditions such as the pressure and temperature of the vacuum chamber 21 are set to predetermined values, and heating of the vapor deposition material in each of the evaporation containers 32a and 32b is started.
Then, when a predetermined evaporation rate is obtained, the shutter 32c is opened and vapor deposition is started.
[0039]
Furthermore, as shown in FIG. 8 (a), it is horizontally linearly moved to a predetermined position in the X ₁ direction to the evaporation source 22 by driving the extensible portion 24d of the bellows 24c passes directly under the substrate holder 23 (second 1 vapor deposition step).
[0040]
At this time, as shown in FIG. 8B, the substrate holder 23 is rotated and moved in the horizontal direction by a predetermined angle (90 ° in the present embodiment) (substrate rotation process).
[0041]
Thereafter, as shown in FIG. 8 (b), the deposition source 22 by the horizontal linear movement in the X ₂ direction back to the original position (second deposition step), thereby the processing of one step is completed.
[0042]
9A and 9B are cross-sectional views showing the shape of the vapor deposition film formed on the substrate according to the present embodiment, and FIG. 9A is a direction perpendicular to the moving direction of the vapor deposition source. FIG. 9B is a sectional view taken in the X direction, which is a direction parallel to the moving direction of the vapor deposition source.
[0043]
9A and 9B, the film thickness curve A shows the film thickness distribution when the substrate 10 is vapor-deposited as in the prior art, and the film thickness curves B and D are shown in FIG. a) As shown in (b), the film thickness distribution is shown when the deposition source 22 is vapor-deposited while moving linearly, the substrate 10 is rotated by 90 °, and the vapor deposition source 22 is vapor-deposited while linearly moving. is there.
[0044]
As is apparent from the film thickness curves C and D of FIG. 9B, when the deposition is performed while the deposition source 22 is moved in the linear direction after the substrate 10 is rotated by 90 °, the deposition is performed while the substrate 10 is rotated. Compared to the case, the film thickness distribution in the vicinity of the substrate support 23a can be made uniform in the direction parallel to the moving direction of the vapor deposition source 22, and a better film can be formed.
[0045]
As described above, according to the present embodiment, by performing vapor deposition while moving the vapor deposition source 22 in the direction orthogonal to the substrate 10, each end (edge portion) of the substrate support portion 23 a and the mask 25. ) The film thickness distribution in the vicinity can be made uniform.
[0046]
In particular, in the present embodiment, the substrate 10 is rotated and moved by the substrate holder 23 and the evaporation source 22 is linearly moved. Therefore, the evaporation source is directed in two directions orthogonal to the substrate 10 with a simple and small configuration. 22 can be moved in parallel straight lines.
[0047]
In addition, according to the present embodiment, since only the reciprocating linear movement of the vapor deposition source 22 and the rotation of the substrate 10 are combined, film formation can be performed efficiently, and the vapor deposition source 22 in the first and second vapor deposition steps. Since the movement range is the same, the apparatus does not increase in size.
[0048]
The present invention is not limited to the above-described embodiment, and various changes can be made.
For example, in the above-described embodiment, the rotation angle of the substrate is 90 °. However, the present invention is not limited to this, and can be an angle other than 90 °. It is also possible to do the above.
[0049]
However, from the viewpoint of efficient film formation, it is preferable to combine one reciprocation of the evaporation source and 90 ° rotation of the substrate as in the above embodiment.
[0050]
The present invention is not limited to a vacuum film forming apparatus for forming an organic thin film layer of an organic LED element, but can be applied to various vacuum film forming apparatuses.
[0051]
However, it is most effective in making the film thickness distribution uniform when applied to a vacuum film forming apparatus for forming an organic thin film layer of an organic LED element as in the above embodiment.
[0052]
【The invention's effect】
As described above, according to the present invention, the film thickness in the vicinity of each end (edge) of the mask is obtained by performing the vapor deposition while relatively linearly moving the vapor deposition source in different directions with respect to the substrate. The distribution can be made uniform.
In the vacuum film forming apparatus of the present invention, if the substrate rotating means for rotating the substrate and the evaporation source moving means for linearly moving the evaporation source are provided, the evaporation source is different from the substrate with a simple and small configuration. It is possible to move relatively linearly in a plurality of directions.
In the first vapor deposition step of the method of the present invention, vapor deposition is performed while linearly moving the vapor deposition source in parallel with the substrate, and in the substrate rotation step, the substrate is rotated by a predetermined angle in a plane including the substrate, If the vapor deposition is performed while linearly moving the vapor deposition source in parallel with the substrate in the second vapor deposition step, the film can be formed efficiently.
In particular, if the substrate is rotated by 90 ° in the substrate rotation process, the film thickness distribution in the vicinity of each end (edge) of the mask is reliably uniformed when the film is formed using a rectangular mask. be able to.
Furthermore, if the angle formed by the movement direction of the vapor deposition source in the first vapor deposition process and the movement direction of the vapor deposition source in the second vapor deposition process is 180 °, the vapor deposition source in the first vapor deposition process and the second vapor deposition process. Since the movement range is the same, the apparatus can be reduced in size.
[Brief description of the drawings]
FIG. 1 is an overall perspective view of a vacuum processing apparatus having a vacuum film forming apparatus according to an embodiment of the present invention. FIG. 2 is a schematic configuration diagram of the vacuum film forming apparatus. FIG. 4 is an exploded perspective view showing the configuration of the evaporation source and the evaporation source moving mechanism of the present embodiment. FIG. 5 is another example of the evaporation source used in the present invention. FIGS. 6A and 6B are perspective views for explaining the principle of the vacuum film forming apparatus of the present invention. FIGS. 7A and 7B are vapor deposition films formed on a substrate. 7A is a cross-sectional view in the Y direction, which is a direction perpendicular to the moving direction of the vapor deposition source, and FIG. 7B is a direction parallel to the moving direction of the vapor deposition source. Cross-sectional view in the X direction [FIG. 8] (a) (b): Perspective view for explaining the operation of the vacuum film forming apparatus according to the embodiment of the present invention [FIG. 9] (a). b): A cross-sectional view showing the shape of the vapor deposition film formed on the substrate according to the embodiment, and FIG. 9A is a cross-sectional view taken along the Y direction, which is a direction perpendicular to the moving direction of the vapor deposition source. (B) is a cross-sectional view in the X direction, which is a direction parallel to the moving direction of the vapor deposition source. FIG. 10 is a perspective view showing a schematic configuration of a conventional vacuum film forming apparatus. (B): graph showing the state of film pressure distribution in the vicinity of the substrate support when a film is formed by a conventional vacuum film forming apparatus.
DESCRIPTION OF SYMBOLS 1 ... Vacuum processing apparatus 2 ... Vacuum robot chamber 5, 6, 7 ... Deposition chamber 20 ... Vacuum film-forming apparatus 21 ... Vacuum tank 22 ... Deposition source 23 ... Substrate holder (substrate rotation means) 23a ... Substrate support part 24 ... Deposition source Moving mechanism (deposition source moving means) 25 ... Mask 30 ... Base A, B, C, D ... Film thickness curve 32 ... Deposition source

Claims (6)

In a vacuum film forming apparatus that forms a film by vapor deposition on a substrate in a vacuum through a rectangular mask on which a predetermined pattern is formed,
Substrate rotating means for rotating the substrate by 90 ° in a horizontal plane;
A vacuum film forming apparatus having moving means for linearly moving a vapor deposition source for performing the vapor deposition in two different directions parallel to the substrate. The vacuum film-forming apparatus according to claim 1, wherein a pair of the evaporation sources are arranged at intervals in a direction orthogonal to the two different directions.   The vacuum film-forming apparatus according to claim 2, wherein each of the evaporation sources is provided with a shutter.   The vacuum deposition apparatus according to claim 1, wherein the evaporation source is provided with a lid portion extending in a direction orthogonal to the two different directions. A vacuum film forming method for forming a film using the vacuum film forming apparatus according to claim 1,
A first vapor deposition step of performing vapor deposition while linearly moving the vapor deposition source parallel to the substrate;
A substrate rotating step of rotating the substrate by 90 ° in a plane including the substrate;
A vacuum deposition method comprising: a second deposition step in which deposition is performed while linearly moving the deposition source parallel to the substrate. The vacuum film-forming method according to claim 5, wherein an angle formed by a moving direction of the vapor deposition source in the first vapor deposition step and a moving direction of the vapor deposition source in the second vapor deposition step is 180 °.

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