JP2020139227A - Film deposition apparatus, film deposition method, and manufacturing method of electronic device - Google Patents

Abstract

To provide a technique for suppressing reduction of an exchange cycle of a film deposition rate measurement part for monitoring a vapor deposition position.SOLUTION: A film deposition apparatus 11 according to the invention includes: a vessel 20; a first evaporation source 23 which is arranged in the vessel 20 and includes a plurality of crucibles 231; a first film deposition rate measurement part 271a which is arranged toward a first position 232a of the first evaporation source 23; a second film deposition rate measurement part 272a which is arranged toward a second position 237a of the first evaporation source 23; first opening-closing means 26a which is arranged in a position corresponding to the first position 232a; and first cover means 25a which is arranged in a position corresponding to the second position 237a and arranged to be fixed in the vessel 20. A first distance A between the first position 232a and the first film deposition rate measurement part 271a is larger than a second distance B between the second position 237a and the second film deposition rate measurement part 272a.SELECTED DRAWING: Figure 6

Description

The present invention relates to a film forming apparatus, a film forming method, and an electronic device manufacturing method, and more particularly to an arrangement structure of a film forming rate measuring means.

Recently, an organic EL display device (organic EL display) has been in the limelight as a flat panel display device. The organic EL display device is a self-luminous display, which is superior to the liquid crystal panel display in characteristics such as response speed, viewing angle, and thinning, and is an existing liquid crystal in various mobile terminals such as monitors, televisions, and smartphones. It replaces the panel display at a high speed. It is also expanding its application fields to automobile displays and the like.

The organic light emitting element (organic EL element: OLED) constituting the organic EL display device has a basic structure in which an organic substance layer that emits light is formed between two facing electrodes (cathode electrode and anode electrode). In the film forming apparatus, the organic substance layer and the metal electrode layer of the organic light emitting element heat the evaporation source containing the film forming material to evaporate the film forming material, and a pixel pattern is formed on the evaporated particles of the film forming material. It is manufactured by depositing it on a substrate through a mask.

In particular, in the steaming source 700 of the film forming apparatus for forming the metal electrode layer on the substrate, as shown in FIG. 8, a plurality of crucibles 710 to 770 are arranged on the circumference, and the film is deposited among the plurality of crucibles. The electrode material evaporates from the crucible 710 at the position, and a film is formed on the substrate. When the film-forming material in the crucible 710 at the vapor deposition position is consumed, the evaporation source 700 rotates and the crucible 760 at the preheating position moves to the vapor deposition position, so that film formation is continuously performed (Patent Document 1). ).

In the film forming apparatus, a crystal oscillator monitor is used to measure and control the thickness and the film forming rate of the film forming material deposited on the substrate. That is, in the film forming apparatus, the thickness of the film forming material formed on the substrate is utilized by utilizing the relationship between the resonance frequency of the crystal oscillator and the thickness of the film forming material deposited on the electrode of the crystal oscillator. And the film formation rate is calculated.
However, if the film-forming material is deposited on the electrodes of the crystal oscillator to a thickness greater than a predetermined thickness, the resonance vibration of the crystal oscillator becomes unstable, making it impossible to measure the film thickness from the resonance frequency of the crystal oscillator. Become. If such a phenomenon occurs, it is determined that the life of the crystal oscillator has expired, and the crystal oscillator is switched.

Japanese Unexamined Patent Publication No. 2006-249575

In the film forming apparatus for depositing the metal electrode layer on the substrate, the vapor deposition position is monitored in order to monitor the evaporation rate or the film formation rate for each of the crucible 710 at the vapor deposition position and the crucible 760 at the preheating position. Install a crystal oscillator monitor for the purpose and a crystal oscillator monitor for preheating position monitoring.

By the way, since the crystal oscillator monitor for vapor deposition position monitoring takes longer to monitor the film formation rate of the evaporation source pot than the crystal oscillator monitor for preheating position monitoring, it is placed on the electrode of the crystal oscillator for vapor deposition position monitoring. The time it takes for the deposited material to reach a predetermined thickness is shorter than that of the crystal oscillator for preheating position monitoring. Therefore, the crystal oscillator monitor for vapor deposition position monitoring will reach the end of its life earlier than the crystal oscillator monitor for preheating position monitoring. As a result, there is a problem that the replacement cycle of the crystal oscillator monitor for monitoring the vapor deposition position becomes relatively short.

In view of the above problems, it is a main object of the present invention to provide a technique for suppressing shortening of the replacement cycle of the film deposition rate measuring unit for monitoring the vapor deposition position.

The film forming apparatus according to the first aspect of the present invention comprises a vacuum vessel, a plurality of evaporation sources each of which is installed in the vacuum vessel and includes a plurality of pots, and a first evaporation source among the plurality of evaporation sources. A first film formation rate measuring unit installed toward the first position, a second film forming rate measuring unit installed toward the second position of the first evaporation source, and a position corresponding to the first position. A first movable opening / closing means installed in the first position and a first cover means installed at a position corresponding to the second position and fixed to the vacuum vessel. The first distance between the first film formation rate measuring unit is larger than the second distance between the second position and the second film forming rate measuring unit.
The film forming method according to the second aspect of the present invention is a film forming method characterized in that a film forming material is formed on a substrate by using the film forming apparatus according to the first aspect of the present invention.
The method for manufacturing an electronic device according to the third aspect of the present invention is characterized in that the electronic device is manufactured by using the film forming method according to the second aspect of the present invention.

According to the present invention, it is possible to provide a technique for suppressing shortening of the replacement cycle of the film formation rate measuring unit for monitoring the vapor deposition position.

FIG. 1 is a schematic view of a part of an electronic device manufacturing line according to an embodiment of the present invention. FIG. 2 is a schematic view of a film forming apparatus according to an embodiment of the present invention. FIG. 3 is a schematic view of an evaporation source of a film forming apparatus according to an embodiment of the present invention. FIG. 4 is a schematic view showing the structure of the adhesive member according to the embodiment of the present invention. FIG. 5 is a schematic view showing the structure of the film formation rate measuring means according to the embodiment of the present invention. FIG. 6 is a schematic view showing an arrangement structure of a film formation rate measuring unit and an evaporation source according to an embodiment of the present invention. FIG. 7 is a schematic view showing the structure of the organic EL display device. FIG. 8 is a schematic view showing an example of an evaporation source used in a film forming apparatus for a metal electrode layer.

Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples merely exemplify preferable configurations of the present invention, and the scope of the present invention is not limited to those configurations. Further, the hardware configuration and software configuration, processing flow, manufacturing conditions, dimensions, materials, shapes, etc. of the apparatus in the following description are limited to those of the present invention unless otherwise specified. It is not the purpose.

The present invention can be applied to an apparatus for depositing various materials on the surface of a substrate to form a film, and can be preferably applied to an apparatus for forming a thin film (material layer) having a desired pattern by vacuum vapor deposition. As the material of the substrate, any material such as glass, a film of a polymer material, and a metal can be selected, and the substrate may be, for example, a substrate in which a film such as polyimide is laminated on a glass substrate. .. Further, as the film forming material, any material such as an organic material and a metallic material (metal, metal oxide, etc.) may be selected. The present invention can be applied to a film forming apparatus including a sputtering apparatus and a CVD (Chemical Vapor Deposition) apparatus in addition to the vacuum vapor deposition apparatus described in the following description. Specifically, the technique of the present invention can be applied to manufacturing equipment such as organic electronic devices (for example, organic EL elements and thin film solar cells) and optical members. Among them, an apparatus for manufacturing an organic EL element, which forms an organic EL element by evaporating a film-forming material and depositing it on a substrate via a mask, is one of the preferred application examples of the present invention.

<Manufacturing equipment for electronic devices>
FIG. 1 is a plan view schematically showing a configuration of a part of an electronic device manufacturing apparatus.
The manufacturing apparatus of FIG. 1 is used, for example, for manufacturing a display panel of an organic EL display device for a smartphone. In the case of a display panel for smartphones, for example, on a 4.5th generation substrate (about 700 mm x about 900 mm), a 6th generation full size (about 1500 mm x about 1850 mm), or a half cut size (about 1500 mm x about 925 mm) substrate. After forming a film for forming an organic EL element, the substrate is cut out to manufacture a plurality of small-sized panels. The electronic device manufacturing device generally includes a plurality of cluster devices 1 and a relay device that connects the cluster devices.

The cluster device 1 includes a plurality of film forming devices 11 for performing processing (for example, film forming) on the substrate S, a plurality of mask stock devices 12 for accommodating masks M before and after use, and a transport chamber 13 arranged in the center thereof. And. As shown in FIG. 1, the transport chamber 13 is connected to each of the plurality of film forming apparatus 11 and the mask stock apparatus 12.

A transfer robot 14 that transfers the substrate S and the mask M is arranged in the transfer chamber 13. The transfer robot 14 transfers the substrate S from the pass chamber 15 of the relay device arranged on the upstream side to the film forming apparatus 11. Further, the transfer robot 14 transfers the mask M between the film forming apparatus 11 and the mask stock apparatus 12. The transfer robot 14 is, for example, a robot having a structure in which a robot hand holding a substrate S or a mask M is attached to an articulated arm. In the film forming apparatus 11 (also referred to as a vapor deposition apparatus), the film forming material stored in the evaporation source is heated by the heater and evaporated, and the film is formed on the substrate through the mask. A series of film formation processes such as delivery of the substrate S / mask M to and from the transfer robot 14, adjustment (alignment) of the relative positions of the substrate S and the mask M, fixing of the substrate S on the mask M, and film formation (deposited film deposition) , Is performed by the film forming apparatus 11.

In the mask stock device 12, a new mask used in the film forming process in the film forming apparatus 11 and a used mask are separately stored in two cassettes. The transfer robot 14 transfers the used mask from the film forming apparatus 11 to the cassette of the mask stock device 12, and conveys a new mask stored in another cassette of the mask stock device 12 to the film forming apparatus 11.

The cluster device 1 includes a path chamber 15 that transmits the board S from the upstream side to the cluster device 1 in the flow direction of the board S, and another board S on the downstream side that has been film-formed by the cluster device 1. A buffer chamber 16 for transmitting to the cluster device is connected. The transfer robot 14 in the transfer chamber 13 receives the substrate S from the pass chamber 15 on the upstream side and transfers it to one of the film forming devices 11 (for example, the film forming device 11a) in the cluster device 1. Further, the transfer robot 14 receives the substrate S for which the film forming process in the cluster device 1 has been completed from one of the plurality of film forming devices 11 (for example, the film forming device 11b), and the buffer connected to the downstream side. Transport to chamber 16.

A swivel chamber 17 for changing the orientation of the substrate is installed between the buffer chamber 16 and the pass chamber 15. The swivel chamber 17 is provided with a transport robot 18 for receiving the substrate S from the buffer chamber 16, rotating the substrate S by 180 °, and transporting the substrate S to the pass chamber 15. As a result, the orientation of the substrate S is the same between the cluster device on the upstream side and the cluster device on the downstream side, and the substrate processing becomes easy.
The pass chamber 15, the buffer chamber 16, and the swivel chamber 17 are so-called relay devices that connect the cluster devices, and the relay devices installed on the upstream side and / or the downstream side of the cluster device are the pass room and the buffer room. , Includes at least one of the swivel chambers.

The film forming apparatus 11, the mask stock apparatus 12, the transport chamber 13, the buffer chamber 16, the swirl chamber 17, and the like are maintained in a high vacuum state in the process of manufacturing the organic light emitting element. The pass chamber 15 is usually maintained in a low vacuum state, but may be maintained in a high vacuum state if necessary.

In this embodiment, the configuration of the manufacturing apparatus for the electronic device has been described with reference to FIG. 1, but the present invention is not limited to this, and other types of apparatus and chambers may be provided, and these devices may be provided. And the arrangement between the chambers may change.
For example, in the present invention, the substrate S and the mask M are coalesced by another device or chamber instead of the film forming apparatus 11, and then placed on a carrier and conveyed through a plurality of film forming apparatus arranged in a row. It can also be applied to an in-line type manufacturing apparatus that performs a film forming process while performing the film forming process.

<Film formation equipment>
Hereinafter, the film forming apparatus according to the embodiment of the present invention will be described with reference to FIGS. 2 to 5.

FIG. 2 is a cross-sectional view schematically showing the configuration of a film forming apparatus, particularly a film forming apparatus 11 of a metallic film forming material used for forming a metal electrode layer.
The film forming apparatus 11 includes a vacuum vessel 20, a substrate holding unit 21, a mask holding unit 22, and an evaporation source 23. The inside of the vacuum vessel 20 is maintained in a reduced pressure atmosphere such as vacuum or an inert gas atmosphere such as nitrogen gas. Here, the term "vacuum" refers to a state in which the degree of vacuum required for film formation is satisfied, and the "vacuum container" here also refers to a container that can maintain the atmosphere required for film formation. ..

As shown in FIG. 2, a substrate holding unit 21 and a mask holding unit 22 are provided in the upper part inside the vacuum container 20, and an evaporation source 23 is installed in the lower part or the bottom surface inside the vacuum container 20. ..
The board holding unit 21 is a means for holding the board S received from the transfer robot 14 in the transfer chamber 13, and is also called a board holder.
The mask holding unit 22 is a means for holding the mask M carried into the vacuum container 20, and is installed below the substrate holding unit 21. The mask M is placed on the mask holding unit 22. The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate S.

At the time of film formation, for example, the substrate holding unit 21 descends relative to the mask holding unit 22, and the substrate S held by the substrate holding unit 21 is placed on the mask M. Further, the substrate holding unit 21 and the mask holding unit 22 are rotated together by the rotating shaft 24 introduced from the upper part (outside) of the vacuum vessel 20, so that the mask M and the substrate S placed on the mask M are placed on the mask M. Rotates. As a result, the metallic film-forming material can be formed on the substrate S with a uniform thickness.

The evaporation source 23 includes a crucible 231 in which a film-forming material to be formed on the substrate is stored, and a heater (not shown) for heating the crucible 231.
As shown in FIG. 3, a plurality of evaporation sources 23 of the film forming apparatus 11 of the metallic film-forming material are provided, and each evaporation source 23 includes a plurality of crucibles (storage portions) 231. The number of crucibles 231 included in one evaporation source 23 is usually 5, or 7, and each evaporation source 23 is rotated (for example, rotated) by a rotation drive mechanism (not shown) to rotate the crucible 231. It can be moved to a desired position. Therefore, the evaporation source 23 of the film forming apparatus 11 of the metallic film forming material is also referred to as a revolver.

At the time of film formation, the crucible 231 at the vapor deposition position 232 (232a, 232b, film formation position) of each of the plurality of evaporation sources 23 (23a, 23b) is heated to a high temperature by a heater and stored in the crucible 231. The film-forming material is evaporated to form a film on the substrate 10. After starting to heat the crucible 231 that came to the vapor deposition position 232, the crucible 231 at the preheating position 237 (237a, 237b) starts to be preheated at an appropriate time. The preheating position 237 is a position where the crucible 231 used for film formation is preheated by moving to the vapor deposition position 232 next. The start time of preheating is when the evaporation rate from the crucible 231 at the preheating position 237 (or when the crucible 231 at the preheating position 237 moves to the vapor deposition position 232 before the film forming material of the crucible 231 at the vapor deposition position 232 runs out. The film formation rate of the film formed on the substrate S by the crucible, the same applies hereinafter) is set so as to reach a predetermined value. That is, the crucible at the preheating position 237 is preheated during at least a part of the period during which the crucible at the vapor deposition position 232 is used for film formation.

When the film-forming material in the crucible 231 at the vapor deposition position 232 runs out, the evaporation source 23 is driven to rotate (for example, rotate) to move the crucible 231 at the vapor deposition position 232 to the post-deposition position 234 and move to the preheating position 237. The existing crucible 231 is rotationally moved to the vapor deposition position 232. The preheating position 237 is a position where the crucible that next moves to the vapor deposition position 232 is preheated. In this way, by preheating the crucible that moves to the vapor deposition position 232 in advance, the vapor deposition position 232 is reached. The time required to heat the crucible after being moved can be reduced, and the overall film formation time can be shortened.

The vapor deposition position 232 and the preheating position 237 are set so that the crucibles at the positions are skipped one by one so as not to interfere with each other. In this way, film formation is performed while rotating each of the evaporation sources 23a and 23b until all the film forming materials of the crucibles 231 in the evaporation source 23 are consumed.

Since the temperature of not only the crucible at the vapor deposition position 232 but also the crucible at the preheating position 237 and the post-deposition position 234 is maintained relatively high, the film-forming material evaporates from the crucible at the preheating position 237 and the post-deposition position 234. However, in order to prevent the film-forming material evaporated from the crucibles at these positions (237, 234) from scattering toward the substrate S or other parts in the vacuum vessel 20, the adhesive member (covering means) 25 Is provided on each evaporation source 23. For example, the adhesion member 25 according to the present embodiment includes a first protection member 25a (first cover means) provided on the first evaporation source 23a and a second protection member 25 installed on the second evaporation source 23b. Includes a landing member 25b (second cover means). The first anti-adhesive member is arranged between the crucible located at the first preheating position (described later) and the substrate, and the second anti-adhesive member is located between the crucible located at the second preheating position (described later) and the substrate. It is located in.

Further, the adhesion member 25 is installed so as to be fixed to the vacuum container 20 of the film forming apparatus 11. As shown in FIG. 4, the adhesive member 25 according to an embodiment of the present invention has a first opening 251 at a position corresponding to the vapor deposition position 232 of the evaporation source 23. As a result, the particles of the film-forming material evaporated from the crucible 231 that came to the vapor deposition position 232 can fly toward the substrate.

Further, the adhesion member 25 prevents the evaporated particles from the crucible 231 at the preheating position 237 from flying toward the substrate S, and measures the evaporation rate from the crucible 231 at the preheating position 237 in order to measure the evaporation rate from the crucible 231 at the preheating position 237. Evaporated particles from the crucible 231 are the film-forming rate measuring means 27
Is configured to be able to reach. For example, the adhesion member 25 has a guide unit 252 that guides the evaporated particles scattered from the crucible at the preheating position 237 toward the film formation rate measuring unit 27, and the film forming rate measuring means 27 along the guide unit 252. It has a second opening 253 through which scattered evaporated particles can pass. That is, the second opening 253 is installed on the path from the crucible 231 at the preheating position 237 to the film formation rate measuring means 27.

The film-forming material evaporated from the crucible at the preheating position 237 and the post-depositing position 234 is deposited on the adhesion member 25. The adhesion member 25 according to the present embodiment has a preheating position in order to reduce that the film-forming material deposited on the adhesion member 25 is reflected or re-evaporated and contaminates other components in the vacuum vessel 20. Convex portions 254 and 255 may be formed at positions corresponding to 237 and / or post-evaporation positions 234.

In order to temporarily prevent the evaporated particles of the film-forming material evaporated from the crucible 231 at the vapor deposition position 232 from being deposited on the substrate S (for example, by the time the evaporation rate of the crucible 231 at the vapor deposition position 232 reaches a predetermined value). The evaporation source shutter (movable opening / closing means) 26 is rotatably installed above each evaporation source 23. For example, the evaporation source shutter 26 according to the present embodiment is installed above the first evaporation source shutter 26a (first movable opening / closing means) installed above the first evaporation source 23a and above the second evaporation source 23b. It also includes a second evaporation source shutter 26b (second movable opening / closing means). The first movable opening / closing means is arranged between the crucible located at the first thin-film deposition position (described later) and the substrate, and the second movable opening / closing means is located between the crucible located at the second vapor deposition position (described later) and the substrate. It is located in.

At the time when the film formation on the substrate S starts, the evaporation source shutter 26 rotates and moves to open the upper part of the crucible 231 at the vapor deposition position 232, and the evaporated particles of the film-forming material from the crucible 231 at the vapor deposition position 232 are released. Make it fly toward the substrate S. That is, the evaporation source shutter 26 is retracted so that the closed position (solid line in FIG. 2) that prevents the upper part of the crucible 231 at the vapor deposition position 232 and the evaporated particles from the crucible 231 at the vapor deposition position 232 can be scattered toward the substrate. Rotate between the open position (broken line in FIG. 2).

In the vacuum vessel 20 of the film forming apparatus 11, for measuring the evaporation rate of the film forming material from the plurality of evaporation sources 23 or the film forming rate at which the particles of the film forming material are formed on the substrate S. A plurality of film formation rate measuring means 27 are installed.
For example, the first film-forming rate measuring means 27a measures the evaporation rate and / or the film-forming rate of the first evaporation source 23a, and the second film-forming rate measuring means 27b measures the evaporation rate and / or the evaporation rate of the second evaporation source 23b. Or measure the film formation rate.

Each of the evaporation rate measuring means 27 (27a, 27b) according to the embodiment of the present invention is a film forming rate measuring unit for measuring the evaporation rate from the pot at the vapor deposition position 232 and / or the film forming rate on the substrate. It includes 271 (271a, 271b) and a film formation rate measuring unit 272 (272a, 272b) for measuring the evaporation rate from the pot at the preheating position 237.
For example, the first film forming rate measuring unit 271a of the first film forming rate measuring means 27a measures the evaporation rate or the film forming rate of the pot 231 at the vapor deposition position 232 in the first evaporation source 23a, and measures the first film forming rate. The second film formation rate measuring unit 272a of the measuring means 27a measures the evaporation rate of the pot 231 at the preheating position 237 in the first evaporation source 23a.

The film forming apparatus is a control unit for controlling the operation of each component of the apparatus and performing various calculations necessary for that purpose, for example, calculating the film thickness and the film forming rate based on the information obtained from the crystal oscillator 30. It has 800. A control unit may be provided for each film forming apparatus, or a control unit may be provided for each film forming cluster. As the control unit 800, an information processing device including computing resources such as a processor and a memory, or a dedicated processing circuit may be used.

The film formation rate measuring means 27 according to an embodiment of the present invention includes a crystal oscillator 30 as shown in FIG. 5A. The control unit 800 determines the film thickness and film formation rate of the film-forming material formed on the substrate S based on the change in the resonance frequency of the crystal oscillator 30 according to the deposition of the film-forming material from the evaporation source 23. Calculate indirectly.

The crystal oscillator 30 has a structure in which electrode films 32 and 33 are formed on the front surface and the back surface of a crystal plate 31 cut in a certain crystal direction.
As the crystal plate 31 used for the crystal oscillator 30, it is desirable to use a crystal having AT-cut, which has relatively excellent temperature characteristics. As shown in FIG. 5A, it is better to make the back surface on the electrode film 33 side curved and the surface on the electrode film 32 side on which the film-forming material is deposited flat to improve the vibration stability of the crystal oscillator 30. Can be enhanced.

The electrode films 32 and 33 of the crystal oscillator 30 are preferably made of an alloy containing aluminum (Al) as a main component or gold (Au). This is because the aluminum alloy or gold electrode films 32 and 33 have good adhesion to the film forming material, and the film deposited on the electrode film 32 of the crystal oscillator 30 follows the resonance vibration of the crystal oscillator 30 well. Because it can be done. In FIG. 5A, it is shown that the film-forming material is directly deposited on the electrode film 32, but the adhesion with the electrode material is better on the electrode film 32, and the boundary with the film-forming material is formed. A third film that changes continuously (for example, an organic material different from the film forming material) may be additionally formed.

ここで、Δｆは、共振周波数の変動値、Δｍは、水晶振動子の電極膜３２上に堆積された成膜材料の質量変動値、ｆは、水晶の基本周波数、μは、水晶のせん断係数（ｓｈｅａｒ ｍｏｄｕｌｕｓ）、ρＱは、水晶の密度、Ａは、電極面積である。すなわち、水晶振動子３０の電極３２上に成膜材料が堆積されて、その質量が増加するにつれて、水晶振動子３０の共振周波数は小さくなる。 When an AC voltage is applied to the electrode films 32 and 33 of the crystal oscillator 30, the crystal oscillator 30 vibrates due to the piezoelectric characteristics of the crystal, and when the thickness of the crystal plate satisfies a predetermined condition, it vibrates at a resonance frequency. become. The resonance frequency of such a crystal oscillator 30 changes depending on the mass fluctuation of the film-forming material deposited on the electrode film 32. The following relational expression (Sauerbury equation) holds between the fluctuation value of the resonance frequency of the crystal oscillator 30 and the fluctuation value of the mass of the film-forming material.

Here, Δf is the fluctuation value of the resonance frequency, Δm is the mass fluctuation value of the film-forming material deposited on the electrode film 32 of the crystal oscillator, f is the fundamental frequency of the crystal, and μ is the shear coefficient of the crystal. (Shear modulus), ρQ is the crystal density, and A is the electrode area. That is, as the film-forming material is deposited on the electrode 32 of the crystal oscillator 30 and its mass increases, the resonance frequency of the crystal oscillator 30 decreases.

Utilizing such a relationship, it is possible to obtain the fluctuation value of the mass of the film deposited on the electrode film 32, the film thickness and the film formation rate from the measured fluctuation value of the resonance frequency of the crystal oscillator 30. ..

As shown in FIG. 5B, each film forming rate measuring unit of the film forming rate measuring means 27 according to the embodiment of the present invention includes a plurality of (for example, 10) crystal oscillators 30. Of the plurality of crystal oscillators 30, only the crystal oscillator 30 located at the position corresponding to the opening 34 is exposed to the evaporation source 23, and the film-forming material scattered from the evaporation source 23 is deposited. During this period, the remaining crystal oscillator 30 is maintained in a state of not being exposed to the evaporation source 23, and when the crystal oscillator 30 exposed to the evaporation source 23 reaches the end of its life, the other crystal oscillator 30 corresponds to the opening 34. For example, the film thickness and the film formation rate are continuously measured by rotating the film to the desired position. In this way, when all of the crystal oscillators 30 included in the film forming rate measuring section cannot be used, the film forming rate measuring section is replaced. This can prolong the overall life of the film formation rate measuring section and increase the overall throughput of the production line by reducing the time that the film forming process is interrupted by the replacement of the film forming rate measuring section. Can be made to.

As shown in FIG. 5B, a rotatable chopper 35 is used in the film formation rate measuring unit according to an embodiment of the present invention, and the film is deposited on the crystal oscillator 30 at a position corresponding to the opening 34. The amount of film-forming material can be adjusted. That is, the chopper 35 having the opening 356 is rotated at a constant speed so that the crystal oscillator 30 at the position corresponding to the opening 34 is periodically shielded from the evaporation source 23. The amount of film-forming material deposited on the surface can be adjusted.

<Relative arrangement structure of film formation rate measuring means and evaporation source>
Hereinafter, the arrangement structure of the film formation rate measuring means 27 and the evaporation source 23 according to the embodiment of the present invention will be described with reference to FIG.

FIG. 6 shows the first evaporation source 23a and the second evaporation source 23b surrounded by a broken line in FIG. 3, and the first film formation for measuring the evaporation rate and the film formation rate from each of these evaporation sources 23a and 23b. The rate measuring means 27a and the second film forming rate measuring means 27b are shown.

In the film forming apparatus 11 according to the embodiment of the present invention, evaporation from any of the plurality of evaporation sources 23, for example, the first vapor deposition position (first position, 232a) of the first evaporation source 23a from the pot 231. In order to measure the rate / film formation rate, the first film formation rate measuring unit 271a of the first film formation rate measuring means 27a installed toward the first vapor deposition position 232a of the first evaporation source 23a and the first evaporation A first set toward the first preheating position 237a of the first evaporation source 23a in order to measure the evaporation rate / film formation rate from the pot 231 of the first preheating position (second position 237a) of the source 23a. In the second film forming rate measuring unit 272a of the film forming rate measuring means 27a, the distance between the first film forming rate measuring unit 271a and the pot 231 of the first deposition position 232a or the first deposition position 232a is the second formation. The film rate measuring unit 272a is installed so as to be different from the distance between the first preheating position 237a or the pot 231 of the first preheating position 237a.

For example, the first film forming rate measuring unit 271a and the second film forming rate measuring unit 272a are at a distance between the first film forming rate measuring unit 271a and the pot 231 of the first deposition position 232a or the first deposition position 232a. A certain first distance A is installed so as to be larger than the second distance B, which is the distance between the second film formation rate measuring unit 272a and the first preheating position 237a or the pot 231 of the first preheating position 237a.

In this way, the first film formation rate measuring unit 271a directed to the crucible 231 at the first vapor deposition position 232a is directed from the second film forming rate measuring unit 272a directed to the crucible 231 at the first preheating position 237a to form the first evaporation source. By installing the film at a position far from the crucible at the corresponding position of 23a, the film forming rate of the film forming material deposited on the first film forming rate measuring unit 271a due to evaporation from the crucible 231 at the first deposition position 232a is lowered. Can be done. This is because some of the particles of the film-forming material evaporated from the crucible cannot reach the film-forming rate measuring section due to collision with other particles before reaching the film-forming rate measuring section. Some of the particles of the film-forming material evaporated from the pot 231 of the first evaporation position 232a of the first evaporation source 23a also collide with other particles in the process of flying toward the first film-forming rate measuring unit 271a. Therefore, the amount of particles that actually reach the first film formation rate measuring unit 271a is reduced.

Therefore, even when the first film formation rate measuring unit 271a is exposed to the pot of the first evaporation source 23a for a relatively longer time than the second film formation rate measuring unit 272a, the first film formation rate measurement is performed. Since the film forming rate of the film forming material deposited on the part 271a is lower than the film forming rate of the film forming material deposited on the second film forming rate measuring section 272a, the first film forming rate measuring section 271a and the second forming are formed. The difference in film formation rate between the film rate measuring units 272a can be reduced. As a result, the problem that the first film formation rate measuring unit 271a reaches the life before the second film formation rate measuring unit 272a and the replacement cycle is shortened can be reduced, and the first film forming rate measuring unit 271a can be used. Monitoring can be performed for a relatively long time as compared with the case where the first evaporation source 23a is closer to the first vapor deposition position 232a.

On the other hand, since the second film formation rate measuring unit 272a, which is exposed to the first evaporation source 23a for a relatively short time, is installed near the first preheating position 237a of the first evaporation source 23a, another film formation is performed. Since the influence from the particles of the material is small, the evaporation rate of the crucible 231 at the first preheating position 237a of the first evaporation source 23a can be monitored with high sensitivity.

In one embodiment of the present invention shown in FIG. 6, the third film formation rate measuring unit 271b and the fourth film forming rate measuring unit 272b of the second film forming rate measuring means 27b also belong to the first film forming rate measuring means 27a. It is arranged in the same way as the measuring units. That is, toward the third film formation rate measuring unit 271b directed to the second vapor deposition position (third position 232b) of the second evaporation source 23b and the second preheating position (fourth position 237b) of the second evaporation source 23b. In the fourth film forming rate measuring unit 272b, the distance between the third film forming rate measuring unit 271b and the pot 231 of the second vapor deposition position 232b or the second vapor deposition position 232b is different from that of the fourth film forming rate measuring unit 272b. It is installed so as to be larger than the distance between the second preheating position 237b or the second preheating position 237b and the pot 231.

Further, in one embodiment of the present invention, the first film formation rate measuring unit 271a and the third film forming rate measuring unit 271b are the first distance between the first film forming rate measuring unit 271a and the first deposition position 232a. A is provided so as to be larger than the third distance C between the third film formation rate measuring unit 271b and the first vapor deposition position 232a. That is, when viewed from a plane, there is a first thin-film deposition position 232a of the first evaporation source 23a between the first film-forming rate measuring unit 271a and the third film-forming rate measuring unit 271b, and the first film-forming rate measurement. The path between the portion 271a and the first vapor deposition position 232a of the first evaporation source 23a and the path between the third film formation rate measuring unit 271b and the second vapor deposition position 232b of the second evaporation source 23b intersect each other. Will be done.
As a result, the size of the film forming apparatus 11 in the direction in which the first film forming rate measuring unit 271a and the third film forming rate measuring unit 271b are connected (for example, the short side direction of the substrate S carried into the film forming apparatus 11) is determined. It can be made smaller.

Further, the second distance B, which is the distance between the second film formation rate measuring unit 272a and the first preheating position 237a, is the distance between the third film forming rate measuring unit 271b and the first vapor deposition position 232a. The film formation rate measuring unit and the like are installed so as to be shorter than the third distance C. Similarly, the distance between the fourth film formation rate measuring unit 272b and the second preheating position 237b is shorter than the distance between the first film formation rate measuring unit 271a and the second vapor deposition position 232b. The film formation rate measuring unit and others are installed.

As a result, the film formation rate measuring section directed to the vapor deposition position 232 of each evaporation source 23 is installed at a position higher in the vertical direction of the film forming apparatus than the film forming rate measuring section directed to the preheating position 237, and the evaporation source shutter. The evaporation rate / film formation rate from the pot 231 at the evaporation position 232 of the evaporation source 23 can be measured with high accuracy without being disturbed by 26. Each film formation rate measuring unit can measure the evaporation rate / film formation rate regardless of whether the corresponding evaporation source shutter 26 is in the open position or the closed position.

For example, the first film deposition rate measuring unit 271a and the third film forming rate measuring unit 271b perform the first vapor deposition of the first evaporation source 23a without being disturbed by the first evaporation source shutter 26a or the second evaporation source shutter 26b. The evaporation rate / deposition rate from the pot 231 at the second vapor deposition position 232b of the position 232a or the second evaporation source 23b can be measured with high accuracy.

Further, in one embodiment of the present invention, the first distance A between the first film formation rate measuring unit 271a and the first vapor deposition position 232a of the first evaporation source 23a is the fourth film formation rate measuring unit 272b. The corresponding film formation rate measuring unit is installed so as to be smaller than the fourth distance D between the first evaporation source 23a and the first vapor deposition position 232a.

In one embodiment of the present invention, in the first evaporation source shutter 26a, the distance between the first open position, which is the open position of the first evaporation source shutter 26a, and the first vapor deposition position 232a of the first evaporation source 23a is determined. The first open position and the first closed position are set so as to be larger than the distance between the first closed position, which is the closed position of the first evaporation source shutter 26a, and the first vapor deposition position 232a of the first evaporation source 23a. It is possible to move between.
Similarly, in the second evaporation source shutter 26b, the distance between the second open position, which is the open position of the second evaporation source shutter 26b, and the second vapor deposition position 232b of the second evaporation source 23b is the second evaporation source shutter. It is possible to move between the second open position and the second closed position so as to be larger than the distance between the second closed position, which is the closed position of 26b, and the second vapor deposition position 232b of the second evaporation source 23b. is there.

In this embodiment, among the plurality of evaporation sources 23, the first evaporation source 23a and the second evaporation source 23b, and the deposition rate measuring means for measuring the evaporation rate / deposition rate from these evaporation sources. Although the description has focused on the relative arrangement position with the measuring unit and others, the present invention is not limited to this, and among the plurality of evaporation sources 23, the third evaporation source 23c and the fourth evaporation source 23d and their evaporation Similarly, the position relative to the measuring unit of the film forming rate measuring means for measuring the evaporation rate / film forming rate from the source can be determined.
Further, among the plurality of evaporation sources 23, also in the fifth evaporation source 23e, the film formation rate measurement unit directed to the vapor deposition position of the fifth evaporation source 23e is directed to the preheating position of the fifth evaporation source 23e. It is preferable to install it at a position farther than the unit.

<Manufacturing method of electronic devices>
Next, an example of a method for manufacturing an electronic device using the film forming apparatus of the present embodiment will be described. Hereinafter, the configuration and manufacturing method of the organic EL display device will be illustrated as an example of the electronic device.
First, the organic EL display device to be manufactured will be described. FIG. 7A is an overall view of the organic EL display device 60, and FIG. 7B shows a cross-sectional structure of one pixel.

As shown in FIG. 7A, a plurality of pixels 62 including a plurality of light emitting elements are arranged in a matrix in the display area 61 of the organic EL display device 60. Although details will be described later, each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. The pixel referred to here refers to the smallest unit that enables the display of a desired color in the display area 61. In the case of the organic EL display device according to this embodiment, the pixel 62 is composed of a combination of a first light emitting element 62R, a second light emitting element 62G, and a third light emitting element 62B that emit light differently from each other. The pixel 62 is often composed of a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element, and is particularly limited to at least one color. There are no restrictions.

FIG. 7B is a schematic partial cross-sectional view taken along the line AB of FIG. 7A. The pixel 62 has a first electrode (anode) 64, a hole transport layer 65, one of the light emitting layers 66R, 66G, 66B, an electron transport layer 67, and a second electrode (cathode) 68 on the substrate 63. It has an organic EL element comprising. Of these, the hole transport layer 65, the light emitting layers 66R, 66G, 66B, and the electron transport layer 67 correspond to the organic layer. Further, in the present embodiment, the light emitting layer 66R is an organic EL layer that emits red, the light emitting layer 66G is an organic EL layer that emits green, and the light emitting layer 66B is an organic EL layer that emits blue. The light emitting layers 66R, 66G, and 66B are formed in a pattern corresponding to a light emitting element (sometimes referred to as an organic EL element) that emits red, green, and blue, respectively. Further, the first electrode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the second electrode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. An insulating layer 69 is provided between the first electrodes 64 in order to prevent the first electrode 64 and the second electrode 68 from being short-circuited by foreign matter. Further, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.

In FIG. 7B, the hole transport layer 65 and the electron transport layer 67 are shown as one layer, but depending on the structure of the organic EL display element, there are a plurality of layers including the hole block layer and the electron block layer. It may be formed. Further, between the first electrode 64 and the hole transport layer 65, there is an energy band structure capable of smoothly injecting holes from the first electrode 64 into the hole transport layer 65. A hole injection layer can also be formed. Similarly, an electron injection layer can be formed between the second electrode 68 and the electron transport layer 67.

Next, an example of a method for manufacturing an organic EL display device will be specifically described.
First, a substrate 63 on which a circuit (not shown) for driving an organic EL display device and a first electrode 64 is formed is prepared.

Acrylic resin is formed by spin coating on the substrate 63 on which the first electrode 64 is formed, and the acrylic resin is patterned by a lithography method so that an opening is formed in the portion where the first electrode 64 is formed to form an insulating layer. Form 69. This opening corresponds to a light emitting region where the light emitting element actually emits light.

The substrate 63 in which the insulating layer 69 is patterned is carried into the first organic material film forming apparatus, the substrate is held by the substrate holding unit 21 and / or an electrostatic chuck (not shown), and the hole transport layer 65 is formed. , A common layer is formed on the first electrode 64 in the display area. The hole transport layer 65 is formed by vacuum deposition. In reality, the hole transport layer 65 is formed to have a size larger than that of the display region 61, so that a high-definition mask is unnecessary.

Next, the substrate 63 on which the hole transport layer 65 is formed is carried into the second organic material film forming apparatus and held by the substrate holding unit 21 and / or the electrostatic chuck. The substrate and the mask are aligned, the substrate is placed on the mask, and the light emitting layer 66R that emits red is formed on the portion of the substrate 63 on which the element that emits red is arranged.

Similar to the film formation of the light emitting layer 66R, the light emitting layer 66G that emits green is formed by the third organic material film forming apparatus, and the light emitting layer 66B that emits blue is further formed by the fourth organic material film forming apparatus. .. After the film formation of the light emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed on the entire display region 61 by the fifth film forming apparatus. The electron transport layer 67 is formed as a layer common to the three color light emitting layers 66R, 66G, and 66B.

The substrate formed up to the electron transport layer 67 is moved to a film forming apparatus made of a metallic film forming material to form a second electrode 68.
According to one embodiment of the present invention, in the film forming apparatus for a metallic film material, the film forming rate measuring section directed to the vapor deposition position of the evaporation source is directed from the film forming rate measuring section directed to the preheating position of the evaporation source. By installing it far away, it is possible to prevent the replacement cycle of the film formation rate measuring unit directed to the vapor deposition position of the evaporation source from being shortened.
After that, it moves to a plasma CVD device to form a protective layer 70, and the organic EL display device 60 is completed.

From the time when the substrate 63 in which the insulating layer 69 is patterned is carried into the film forming apparatus until the film formation of the protective layer 70 is completed, when the substrate 63 is exposed to an atmosphere containing moisture or oxygen, a light emitting layer made of an organic EL material is formed. It may be deteriorated by moisture and oxygen. Therefore, in this example, the loading and unloading of the substrate between the film forming apparatus is performed in a vacuum atmosphere or an inert gas atmosphere.
The above-described embodiment shows an example of the present invention, and the present invention is not limited to the configuration of the above-described embodiment and may be appropriately modified within the scope of the technical idea.

11: Film forming apparatus 20: Vacuum container (container)
21: Substrate holding unit 23: Evaporation source 23a: First evaporation source 23b: Second evaporation source 25: Adhesive member (covering means)
25a: First adhesive member (covering means)
25b: Second adhesive member (covering means)
26: Evaporation source shutter (movable opening / closing means)
26a: First evaporation source shutter (movable opening / closing means)
26b: Second evaporation source shutter (movable opening / closing means)
27: Film formation rate measuring means 231: Crucible (storage unit)
232: Vapor deposition position 232a: First vapor deposition position (first position)
232b: Second vapor deposition position (third position)
237: Preheating position 237a: First preheating position (second position)
237b: 2nd preheating position (4th position)
271, 272: Film formation rate measurement unit 271a: First film formation rate measurement unit 272a: Second film formation rate measurement unit 271b: Third film formation rate measurement unit 272b: Fourth film formation rate measurement unit A: First distance B: Second distance

Claims (16)

With the container
A first evaporation source installed in the container and containing a plurality of crucibles,
A first film formation rate measuring unit installed toward the first position of the first evaporation source,
A second film formation rate measuring unit installed toward the second position of the first evaporation source,
A first movable opening / closing means installed at a position corresponding to the first position and between a crucible located at the first position and a substrate arranged at a film forming position in the container.
A first cover means installed at a position corresponding to the second position and fixed to the container.
Including
The first distance between the first position and the first film formation rate measuring unit is larger than the second distance between the second position and the second film forming rate measuring unit. Membrane device. The film forming apparatus according to claim 1, wherein the first position is a position where a crucible used for film formation is arranged among a plurality of crucibles of the first evaporation source. The film forming apparatus according to claim 2, wherein the second position is a position in which the crucible used for film formation is arranged next among the plurality of crucibles of the first evaporation source. The film forming apparatus according to claim 3, wherein the crucible arranged at the second position is preheated during at least a part of the period during which the crucible used for film formation is used for film formation. .. The film forming apparatus according to claim 4, wherein the period in which the crucible arranged at the second position is preheated is shorter than the period in which the crucible used for film formation is used for film formation. The film forming apparatus according to any one of claims 1 to 5, wherein the first evaporation source is rotatable. The first cover means includes a first opening provided at a position corresponding to the first position and a second opening provided on a path from the second position to the second film formation rate measuring unit. The film forming apparatus according to any one of claims 1 to 6, wherein the film forming apparatus comprises. The first movable opening / closing means can move between a first closed position that covers the first position of the first evaporation source and a first open position that opens the first position of the first evaporation source. And
According to any one of claims 1 to 7, the distance between the first open position and the first position is larger than the distance between the first closed position and the first position. The film forming apparatus according to the above. It also has a second evaporation source containing multiple crucibles,
A third film formation rate measuring unit installed toward the third position of the second evaporation source,
A second movable opening / closing means installed at a position corresponding to the third position,
Including
The result according to any one of claims 1 to 8, wherein the first distance is larger than the third distance, which is the distance between the first position and the third film formation rate measuring unit. Membrane device. The film forming apparatus according to claim 9, wherein the second distance is smaller than the third distance. A fourth film formation rate measuring unit installed toward the fourth position of the second evaporation source,
A second cover means installed at a position corresponding to the fourth position and fixed to the container.
Including
The film forming apparatus according to claim 9 or 10, wherein the first distance is smaller than the fourth distance between the first position and the fourth film forming rate measuring unit. The third position is a position where the crucible used for film formation is arranged among the plurality of crucibles of the second evaporation source.
The fourth position is a position where the crucible used for film formation is placed next among the plurality of crucibles of the second evaporation source.
The film formation according to claim 11, wherein the crucible arranged at the fourth position is preheated during at least a part of the period during which the crucible used for the film formation is used for the film formation. apparatus. The film forming apparatus according to any one of claims 9 to 12, wherein the second evaporation source is rotatable. The first movable opening / closing means can move between a first closed position that covers the first position of the first evaporation source and a first open position that opens the first position of the first evaporation source. And
The film forming apparatus according to claim 9, wherein the distance between the first open position and the third position is larger than the distance between the first closed position and the third position. A film forming method for forming a film forming material on a substrate by using the film forming apparatus according to any one of claims 1 to 14. A method for manufacturing an electronic device by using the film forming method of claim 15.

Images