JP2022107969A - Deposition apparatus, deposition method, and production method of electronic device - Google Patents

Abstract

To provide a technology capable of achieving a maintenance cycle which is efficient for the entire deposition apparatus.SOLUTION: A deposition apparatus 1 includes a chamber 2 for housing a substrate 5, an evaporation source 4 arranged in the chamber 2 for evaporating a film deposition material 44, and multiple structures arranged in the chamber 2. The multiple structures include a second structure to which coating for reducing a coating weight of the film deposition material 44 is not applied, and a first structure to which the coating is applied. For an amount of deposition that is obtained based on an amount of deposition per unit time and on an exposure time to the evaporation source 4, the amount of deposition of the first structure is smaller than the amount of deposition of the second structure.SELECTED DRAWING: Figure 1

Description

The present invention relates to a film forming apparatus, a film forming method, and an electronic device manufacturing method.

As a film-forming apparatus for forming a thin film on a substrate as a film-forming target, a container (crucible) containing a film-forming material is heated in a vacuum chamber to vaporize (sublimate or evaporate) the film-forming material. There is a vacuum evaporation type film forming apparatus that ejects to the outside and attaches and deposits on the surface of the substrate. Of the vaporized film-forming material, the film-forming material that does not contribute to film formation adheres to structures such as an anti-adhesion plate and a shutter arranged in the chamber. Patent Literature 1 discloses a technique of coating a window for observing the inside of a chamber, a shutter placed near the container, and the like with a water-repellent thin film for suppressing adhesion of film-forming materials. .

JP-A-10-121223

The windows and shutters described above are structures to which the deposition material adheres (film formation rate) is relatively high. That is, in the prior art, a structure with a relatively high film formation rate is treated as a structure with a high priority for coating. However, even if the coating is performed, the film-forming material may adhere. In that case, maintenance such as cleaning and replacement is performed. The inventors of the present application have found that the effect of coating is relatively small in areas where the film formation rate is relatively high, and maintenance frequency may not change regardless of the presence or absence of coating. In addition, the frequency of maintenance varies not only depending on the properties and functions of the structure, but also greatly varies due to changes in the deposition rate depending on the arrangement in the chamber, particularly the arrangement with respect to the vessel as the evaporation source. In addition, maintenance costs may also vary depending on the type of structure. Therefore, it may not be cost effective to apply coatings to all structures in the chamber. Moreover, eliminating the place in the chamber for the deposition materials that do not contribute to the deposition may affect the deposition quality. That is, from the viewpoint of maintenance frequency, there is room for examination in selecting a structure to be coated.

An object of the present invention is to provide a technique capable of realizing an efficient maintenance cycle for the entire film forming apparatus.

In order to solve the above problems, the film forming apparatus of the present invention includes:
a chamber in which the substrate is housed;
an evaporation source disposed within the chamber for emitting deposition material;
a plurality of structures disposed within the chamber;
In a film forming apparatus comprising
The plurality of structures are
a first structure having a first film formation amount based on the amount of the film forming material arriving from the evaporation source per unit time and the exposure time to the evaporation source;
a second structure in which the amount of film formation is a second amount of film formation greater than the amount of first film formation;
The first structure is coated to reduce the deposition amount of the deposition material,
The second structure is characterized in that the coating is not applied.

According to the present invention, it is possible to realize an efficient maintenance cycle for the film forming apparatus as a whole.

1 is a schematic cross-sectional view of a film forming apparatus according to Examples 1 to 14; FIG. FIG. 4 is an explanatory diagram of combinations of the presence and absence of coating in Examples 1 to 3; FIG. 4 is a schematic cross-sectional view showing an example of a drive mechanism for a substrate shutter; FIG. 10 is an explanatory diagram of combinations with and without coating in Examples 4 to 12; FIG. 10 is a schematic cross-sectional view showing another example of the driving mechanism of the substrate shutter; FIG. 13 is an explanatory diagram of combinations of the presence and absence of coating in Examples 13 and 14; FIG. 12 is a schematic plan view of a film forming apparatus according to Examples 15 and 16; FIG. 11 is a schematic cross-sectional view of an evaporation source device according to Examples 15 and 16; FIG. 10 is an explanatory diagram of combinations of the presence and absence of coating in Examples 15 and 16; 1 is an explanatory diagram of an organic EL display device; FIG.

[Example]
BEST MODE FOR CARRYING OUT THE INVENTION A mode for carrying out the present invention will be exemplarily described in detail below based on an embodiment with reference to the drawings. However, unless there is a specific description, the dimensions, materials, shapes, relative positions, etc. of the components described in this embodiment are not intended to limit the scope of the present invention.

A film forming apparatus according to an embodiment of the present invention will be described with reference to FIGS. 1 and 2. FIG. The film forming apparatus according to this embodiment is a film forming apparatus that forms a thin film on a substrate by vacuum deposition.

The film forming apparatus according to the present embodiment can be used to manufacture various electronic devices such as various semiconductor devices, magnetic devices, electronic parts, and optical parts on substrates (including those on which a laminate is formed). Used to deposit thin films. More specifically, the film forming apparatus according to this embodiment is preferably used in the manufacture of electronic devices such as light-emitting elements, photoelectric conversion elements, and touch panels. Among them, the film forming apparatus according to the present embodiment is an organic EL (Electro
Luminescence) element and other organic light-emitting elements, and organic photoelectric conversion elements such as organic thin-film solar cells, are particularly preferably applicable. The electronic device in the present invention includes a display device (eg, an organic EL display device) and a lighting device (eg, an organic EL lighting device) equipped with a light-emitting element, and a sensor (eg, an organic CMOS image sensor) equipped with a photoelectric conversion element. It is a thing.

The film forming apparatus according to this embodiment can be used as part of a film forming system including a sputtering apparatus and the like. The present invention can also be applied to a film forming apparatus for forming a thin film on a substrate by sputtering as a film forming method.

As the material of the substrate as the object to be film-formed, in addition to glass, arbitrary materials such as semiconductors (for example, silicon), polymer material films, and metals can be selected. Further, as the substrate, for example, a silicon wafer or a substrate obtained by laminating a film such as polyimide on a glass substrate can be employed.

In addition, when a plurality of the same or corresponding members are included in the same drawing of various devices described below, they may be indicated by adding suffixes such as a and b in the drawing. Subscripts such as a and b may be omitted when there is no need to do so.

<Schematic configuration of film forming apparatus>
FIG. 1 is a schematic diagram showing the configuration of a film forming apparatus 1 according to an embodiment of the present invention. The film forming apparatus 1 has a vacuum chamber (film forming chamber, vapor deposition chamber) 2 whose interior is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas. The term "vacuum" as used herein refers to a state in a space filled with a gas having a pressure lower than atmospheric pressure, typically a space filled with a gas having a pressure lower than 1 atm (1013 hPa). refers to the state of The vacuum chamber 2 (hereinafter referred to as chamber 2) can adjust the room pressure (the pressure inside the chamber) by a room pressure controller (not shown) equipped with a vacuum pump and a room pressure gauge.

When the substrate 5 as a film-forming object is transported (loaded) into the chamber 2 by a transport robot (not shown) via a gate valve (not shown), it is placed on a substrate cradle (mask) provided inside the chamber 2 . supported by 25 . The substrate 5 is horizontally held by a substrate carrier (substrate holder) 51 so that the surface to be film-formed (surface to be processed) 5a of the substrate 5 faces downward. The substrate 5 is placed on the upper surface of the mask 52 via the substrate carrier 51 so that the film formation surface 5a is covered with the mask 52 having an opening pattern corresponding to the thin film pattern to be formed on the film formation surface 5a. be.

<Alignment Mechanism>
The film forming apparatus 1 includes an alignment device 3 for performing relative alignment between the substrate 5 and the mask 52 . The alignment device 3 generally includes an alignment mechanism 30 , a substrate holding arm 31 and an alignment camera 32 .

The substrate holding arm 31 extends into the chamber 2 via a partition wall 33 from an alignment mechanism 30 provided outside the chamber 2 , and is driven by the alignment mechanism 30 to move in the XYZ directions and the Z axis inside the chamber 2 . It is possible to move in the θ direction around the center of rotation. The substrate holding arm 31 has a support portion for supporting the end portion of the substrate carrier 51 on the tip side located inside the chamber 2, lifts the substrate carrier 51 with respect to the mask 52, and holds the substrate carrier 51 (substrate 5). and the relative position of the mask 52 can be adjusted.

The alignment camera 32 is imaging means (position acquisition means) for imaging alignment marks respectively provided on the substrate 5 and the mask 52 through a glass window provided in the partition wall 33 . By acquiring the relative position of the substrate 5 and the mask 52 by imaging with the alignment camera 32, the amount of movement of the substrate 5 with respect to the mask 52 by the substrate holding arm 31 can be acquired.

<Evaporation source>
An evaporation source device 4 is provided below the substrate 5 inside the chamber 2 . The evaporation source device 4 generally includes an evaporation source container (crucible) 41 (hereinafter referred to as container 41) containing a film forming material (evaporation material) 44, and a heating means ( and a heater 42 as a heating source. The film-forming material 44 in the container 41 is vaporized in the container 41 by the heating of the heater 42 , and the film-forming material 44 is vaporized in the container 41 through the nozzle 43 forming the ejection port (discharge port) of the film-forming material 44 provided in the upper part of the container 41 . It is ejected (discharged) to the outside. The film-forming material 44 ejected out of the container 41 is vapor-deposited on the film-forming surface 5 a of the substrate 5 positioned above the evaporation source device 4 .

As for the structure of the container 41, the nozzle 43 is not an essential structure.

The heater 42 has a configuration in which a single linear (wire-shaped) heating element that generates heat when energized is wound around the cylindrical portion of the container 41 a plurality of times. In addition, the structure which winds multiple heat generating bodies may be sufficient. As the heater 42, a metal heating resistor made of stainless steel or the like may be used as a heating element, or a carbon heater or the like may be used.

The evaporation source device 4 is configured such that the injection port of the film forming material 44 is opened and closed by the evaporation source shutter 7 . The evaporation source shutter 7 includes a shielding portion 71 and a rotary shaft 72 . The shielding part 71 is rotatably supported by a rotating shaft 72, and the rotation of the rotating shaft 72 by a power source (not shown) causes a closed position (a position indicated by a dashed line in FIG. 1) to close the injection port and an open position to open it. It is configured to be rotatably movable between positions (positions indicated by solid lines in FIG. 1). In the closed position, the shielding part 71 is configured to cover or block the opening of the nozzle 43 which is the injection port of the container 41 from above, so as to prevent the deposition material 44 from reaching at least the substrate 5 . , suppresses the injection of the deposition material 44 from the nozzle 43 .

The scene where the evaporation source shutter 7 is closed is, for example, to suppress the scattering of the film-forming material 44 in the initial heating stage of the film-forming material 44 before the start of monitoring of the film-forming rate at the start of the film-forming operation. is closed to Further, in the case of continuously forming films on a plurality of substrates 5, the film forming material 44 scatters during heating to keep the temperature of the film forming material 44 at a predetermined temperature during the interval period for replacing the substrates 5. may be closed to suppress Also, when the film forming operation ends, the container 41 may be closed while waiting for the temperature of the container 41 to drop.

In addition, although not shown, there may be a reflector and a heat transfer member for increasing the heating efficiency of the heater 42, and a frame that houses the entire configuration of the evaporation source device 4 including them.

<Deposition rate monitor>
The film forming apparatus 1 according to the present embodiment includes a film forming rate monitor 8 as means for detecting the vapor amount of the film forming material 44 ejected from the container 41 or the film thickness of the thin film formed on the substrate 100 . I have.

The film-forming rate monitor 8 makes a part of the film-forming material 44 ejected from the container 41 adhere to a crystal oscillator (not shown) provided in the monitor head 80 . By detecting the amount of change (decrease) in the resonance frequency (eigenfrequency) of the crystal oscillator due to the deposition of the film-forming material 44, the film-forming rate (deposition rate) corresponding to the predetermined control target temperature is obtained as follows: The deposition amount (deposition amount) of the film forming material 44 per unit time can be obtained. By feeding back this film formation rate to the setting of the control target temperature in the heating control of the heater 42, the film formation rate can be arbitrarily controlled. Therefore, by constantly monitoring the deposition amount of the film-forming material 44 during the film-forming process using the film-forming rate monitor 8, it is possible to form a film with high accuracy.

The film formation rate monitor 8 has a monitor shutter 81 for controlling adhesion of the film formation material 44 to the crystal oscillator of the monitor head 80 . The monitor shutter 81 is driven by a driving mechanism (not shown) to the closed position (solid line position in FIG. 1) between the crystal oscillator of the monitor head 80 and the evaporation source device 4, and It is configured to be able to move to an open position (broken line position in FIG. 1) where it is exposed (exposed) to the substrate.

For example, the monitor shutter 81 is at the open position during monitoring of the film formation rate or when forming a base film (precoat) on the crystal oscillator of the monitor head 80 before starting monitoring, and the film formation rate monitor 8 is turned on. When not in use it is in the closed position. At the closed position, the monitor shutter 81 shields not only the crystal oscillator (monitor opening that exposes the crystal oscillator) but also the front surface of the monitor head 80 from the evaporation source device 4 . is exposed to the evaporation source device 4 .

<Substrate shutter>
The film forming apparatus 1 according to this embodiment includes substrate shutters 91 and 92 for controlling adhesion of the film forming material 44 to the substrate 5 in the vicinity of the substrate 5 . The substrate shutters 91 and 92 have a closed position (the position shown in FIG. 1) located between the substrate 100 and the evaporation source device 4 and an open position where the substrate 100 is exposed to the evaporation source device 4. (not shown in FIG. 1).

When a plurality of substrate shutters 91 and 92 are provided, the exposure to the evaporation source device 4 may vary depending on the position of the evaporation source device 4 and the structure of the drive mechanism. In FIG. 1, drive mechanisms for the substrate shutters 91 and 92 are omitted. Details of the drive mechanism will be described later.

The substrate shutters 91 and 92 block the substrate 5 from the evaporation source device 4 until, for example, the initial heating stage until the film formation rate stabilizes at the start of the film formation operation, that is, until just before the film formation starts. Closed. That is, during film formation rate monitoring before the start of film formation, the evaporation source shutter 7 is opened and the substrate shutters 91 and 92 are closed. In addition, in the case of continuously forming films on a plurality of substrates 5, during the interval period when the substrates 5 are replaced, the film forming material 44 is prevented from scattering into the installation space of the substrates 5. closed to

<Anti-adhesion plate>
In the film forming apparatus 1 according to this embodiment, an anti-adhesion plate is attached to each location inside the chamber 2 . For example, in order to prevent the deposition material 44 from adhering to the inner wall surface of the chamber 2, a bottom anti-adhesion plate 21 covering the bottom surface of the chamber 2 and a side anti-adhesion plate 22 covering the side surfaces of the chamber 2 are attached. In addition, in the upper space of the chamber 2, a partition prevention plate 23 is attached to partition the inner space of the chamber 2 so that only the region around the film formation surface 5a of the substrate 5 is open to the evaporation source device 4. ing. The partition wall adhesion-preventing plate 23 has an opening that exposes the film formation surface 5a of the substrate 5 to the evaporation source device 4, and the opening is opened and closed by the substrate shutters 91 and 92 described above. The bottom anti-adhesion plate 21, the side anti-adhesion plate 22, and the partition anti-adhesion plate 23 are connected in a box shape so as to form a continuous anti-adhesion surface surrounding the opposing region between the evaporation source device 4 and the substrate 5. is provided.

Further, a board cradle attachment prevention plate 24 is provided on the lower surface of the board cradle 25 . The substrate cradle attachment prevention plate 24 faces the upper surface of the partition attachment prevention plate 23 (the surface of the partition attachment prevention plate 23 opposite to the surface facing the evaporation source device 4 ), and is attached to the upper surface of the partition attachment prevention plate 23 . It is arranged so as to extend in a direction away from the opposing region between the evaporation source device 4 and the substrate 5 along the same. As a result, a narrow space is formed between the partition wall attachment-preventing plate 23 and the board cradle attachment-preventing plate 24 . Of the film-forming material 44 discharged from the evaporation source, the film-forming material 44 that escapes from the space surrounded by the box-shaped anti-adhesion plates 21 to 23 but scatters away from the substrate 5 is treated by the partition anti-adhesion plate. It can be caught between 23 and the board cradle anti-adhesion plate 24 . As a result, it is possible to prevent the deposition material 44 from diffusing to the corners above the partition wall adhesion prevention plate 23 inside the chamber 2 and to the periphery of the partition wall 33 .

<Coating>
The film forming apparatus 1 according to the present embodiment provides a specific structure among various structures arranged inside the chamber 2 so that the film forming material 44 is deposited on the surface of the specific structure more than in the case where the base is exposed. It is characterized by applying a coating that reduces the amount of adhesion. In the film forming apparatus 1 according to the present embodiment, target structures include the substrate receiving table 25, the substrate holding arm 31, the evaporation source device 4, the evaporation source shutter 7, the film formation rate monitor 8, the substrate shutter 91, 92, and various anti-adhesion plates 21-24. In addition, the inner wall surface of the chamber 2, the partition wall 33, and the like are also included in the coating target. It should be noted that what is mentioned here is merely an example, and for example, a viewing window provided on the wall of the chamber 2 and a gate valve, which are not shown in the present embodiment, may be included in the coating target.

For the coating, for example, a material having predetermined oil repellency and heat resistance such as DLC (Diamond Like Carbon) and fluorine-containing carbon (fluorocarbon) is used. For any film-forming material, the higher the oil repellency (also referred to as oleophobicity), the higher the anti-adhesion performance. In particular, when an organic material is deposited, a high anti-adhesion effect can be obtained by using an oil-repellent coating material. The heat resistance of the coating material is particularly required when the coating is applied around the evaporation source device 4 which is particularly hot in the chamber 2 . For example, the heat resistance of the coating material should be 100° C. or higher, preferably 200° C. or higher.

A hexane contact angle can be used as a parameter indicating the degree of lipophilicity/lipophobicity of a coating material. It can be defined as the angle formed by a surface and the hexane surface when hexane is dropped onto the surface. A smaller contact angle is more oleophilic, and a larger contact angle is more oleophobic. In other words, the larger the hexane contact angle, the more the deposition of the film-forming material is suppressed. In this embodiment, a material having a hexane contact angle of 40 degrees or more is used.

In general, the longer the main chain, the larger the contact angle tends to be on the same surface. Therefore, it can be said that a surface with a hexane contact angle of 40 degrees or more exhibits oleophobicity to the extent that it is useful as an anti-adhesion coating for most organic materials. That is, the hexane contact angle is a suitable index as a coating material for a film forming apparatus that forms a thin film of an organic material. However, the hexane contact angle of 40 degrees or more is merely an example, and the hexane contact angle required for the coating material of the film forming apparatus is not limited to 40 degrees or more.

Specific examples of DLC include aC:H film, taC:H film, aC film, taC film, DLC containing metals such as Si and Ta, and DLC containing fluorine. The film formation methods for these are exemplified as follows. Plasma CVD method (PACVD), ionization deposition, plasma ion implantation deposition method for aC:H film. Sputtering method for aC film. For ta-C film, cathodic vacuum arc method or T-shaped filtered arc vapor deposition method. Arc ion plating method for ta-C:H films. Unbalanced magnetron sputtering (UBMS) for aC:H films and Si-containing aC:H films. For aC:H films containing metals such as tungsten, a combination of PACVD and UBMS. In this example, an aC:H film (thickness: 1.5 μm) was formed by plasma CVD (carbon source: C2H2).

As a specific example of the fluorine material, for example, a perfluorocarbon-alkoxysilane material may be coated by vapor deposition. In this embodiment, when a SUS substrate is used as the material for forming the member to be coated, SurfClear 100 manufactured by Canon Optron is applied after forming a base layer (SiO2 layer of about 1 μm) on the SUS substrate by vapor deposition of a silica material. Vapor deposition (perfluorocarbon-alkoxysilane layer 20 nm). Alternatively, plasma CVD using tetrafluoroethylene (TFE) may be used.

As specific examples of fluororesin and Teflon (registered trademark) coating, the following materials may be coated by baking coating (200-400° C.): PTFE (polytetrafluoroethylene (tetrafluoride)), PFA (tetrafluoroethylene), fluoroethylene/perfluoroalkyl vinyl ether copolymer), FEP (tetrafluoroethylene/hexafluoropropylene copolymer (
4.6 fluoride)), ETFE (tetrafluoroethylene-ethylene copolymer), PVDF = polyvinylidene fluoride (difluoride), PCTFE (polychlorotrifluoroethylene (trifluoride)), ECTFE (chlorotrifluoride ethylene/ethylene copolymer). Alternatively, coating by electroless nickel-Teflon plating may be used.

Note that the coating material is not limited to those described above, and is appropriately selected according to the material of the base. For example, even if the member to be coated is made of a material such as fluororesin to which the film-forming material is relatively difficult to adhere, the effect of the present embodiment can be obtained by coating with a material having a higher adhesion-preventing effect. can.

<Characteristics of this embodiment (selection of coating location)>
With regard to coating, conventionally, in most cases, coating locations were selected only from the viewpoint of preventing adhesion of film-forming materials. That is, conventionally, the viewpoint of maintenance management, which assumes that the coating does not completely prevent the adhesion of film-forming materials, has not been taken into consideration. On the other hand, in this embodiment, the presence or absence of coating is selected based on the difference in the arrangement of the plurality of structures arranged in the chamber, particularly the difference in arrangement with respect to the evaporation source, the difference in exposure time, and the like. . By applying the coating in consideration of the difference in maintenance cycle for each structure, it is possible to improve the efficiency of the maintenance management of the entire apparatus. It should be noted that coating the entire surface inside the chamber is inefficient and impractical in terms of cost effectiveness. In addition, the material that is prevented from adhering to the structures inside the chamber scatters irregularly inside the chamber, which may affect the deposition quality and prevent adhesion to the structures inside the chamber. Complete prevention is not always the best solution.

In this embodiment, the degree of deposition of the film-forming material is compared among a plurality of structures arranged in the chamber, and the structure (first structure) having a relatively high degree of adhesion is coated. Instead, a coating is applied to a structure with a relatively small degree (second structure). Structures with a high degree of adhesion of film-forming materials tend to require more frequent maintenance in the first place, so it is better to allow structures with a low degree of adhesion of film-forming materials to be used for a longer period of time rather than reducing the maintenance frequency. However, the cost advantage of maintenance may increase.

(deposition amount)
As an example of an index for comparing the degree of adhesion of the film-forming material, the amount of film-forming can be used. The amount of film formation can be compared in terms of size among a plurality of structures arranged in the chamber, for example, based on (A) and (B) below.
(A) "Amount of deposition material arriving per unit time according to the positional relationship with the evaporation source"
(B) "Exposure time to evaporation source"

(A) The amount of film-forming material that reaches per unit time (hereinafter also referred to as the film-forming amount per unit time) is greater on the injection direction side (ejection direction side) with respect to the nozzle opening surface, and on the opposite side. tends to decrease. Also, there is a tendency that the closer to the nozzle opening, the greater the number. Furthermore, premised on the deposit-up configuration, there is also a tendency that the amount is greatest in the vertical direction directly above the nozzle opening, and decreases as the position moves away from the position in the horizontal direction from directly above. In addition, the amount of film deposited per unit time is also affected by structures disposed between the target region and the nozzle opening. The amount of film formed per unit time tends to decrease as the ratio of the area of interest to the nozzle openings that is shielded increases. The structure placed between the region of interest and the nozzle opening may change its position depending on the driving conditions of the deposition apparatus. This influence is represented by the exposure time to the evaporation source of (B). As for (B), it depends on the operation of the apparatus such as the opening and closing of the shutter, and the exposure time can be considered to be almost zero if the evaporation source is located behind other structures. Sometimes. For example, a structure placed at a position directly exposed to the evaporation source (e.g., the side wall of a chamber) has a larger amount of film formed per unit time as it is closer to the evaporation source, and the exposure time is shorter. However, the amount of film formation may increase. On the other hand, structures located behind the substrate or mask with respect to the evaporation source (for example, around the alignment mechanism) are far from the evaporation source and the exposure time is short, so the amount of film formed is extremely small. expected to be smaller.

Considering the above, it can be said that the amount of deposition material that reaches a certain area per unit time is a function with time as a variable. That is, (A) the amount of film-forming material arriving from the evaporation source per unit time, and (B) the film-forming amount based on the exposure time to the evaporation source are expressed as a function of time. It may be said that the value is obtained by integrating the amount of film forming material applied over a predetermined period.

For comparison of the amount of film formation, for example, a boundary position serving as a reference for comparison of the amount of film formation is determined in terms of the relative position to the evaporation source inside the chamber. It may be determined by whether it is arranged in the area. However, the boundary that serves as a reference for comparing the amounts of film formation does not have to be strictly defined. That is, for various structures, it may be determined for convenience in order to classify to which region the first region in which the amount of film formation is large and the second region in which the amount of film formation is small. . For example, for a structure arranged across two regions, it may be determined whether or not it should be coated as belonging to one of the regions in consideration of its properties, maintenance frequency, and the like. Alternatively, in order to compare the amount of film formed, the film forming apparatus may be operated for a predetermined period (for example, one hour or one day) based on actual manufacturing conditions. As a result, the amount of film actually formed in the two regions is (A) the amount of film-forming material arriving from the evaporation source per unit time, and (B) the amount of film formed based on the exposure time to the evaporation source. Equivalent to.

(Examples 1-3)
Some specific examples will be described as Examples 1 to 3 with reference to FIGS. 1 and 2. FIG. Regarding the positional relationship of each structure inside the chamber, in this embodiment, a so-called deposition-up type in which the evaporation source is placed on the bottom surface of the chamber and the substrate to be film-formed is placed above the chamber. The description will be made on the assumption that the film forming apparatus of . That is, it is needless to say that the definition of directions such as the vertical direction and the horizontal direction in the following description will change if the device configuration changes, for example, in the case of a deposition down type or side deposition type device configuration. .

In Example 1, in the apparatus configuration shown in FIG. first area). No coating is applied to the structures arranged in the first region. On the other hand, a region in the chamber on the opposite side of the ejection direction (ejection direction) with respect to the nozzle opening surface of the evaporation source container is defined as a region (second region) where the film formation amount is relatively low. A coating is applied to the structure arranged in the second region.

FIG. 2 is a table summarizing examples of combinations of coated structures and non-coated structures in Examples 1 to 3. FIG. Examples of structures belonging to the first region in Example 1 include the structures shown in the table of FIG. 2(b). That is, the area above the reference in the side surface adhesion prevention plate 22, the partition prevention plate 23, the substrate cradle adhesion prevention plate 24, the substrate cradle 25, the substrate holding arm 31, the partition 33, the substrate carrier 51, and the evaporation source shutter 7 , a shielding portion 71 , a film forming rate monitor 8 , substrate shutters 91 and 92 , a region of the inner wall surface of the chamber 2 facing the first region, and the like.

In addition, as a structure belonging to the second region in Example 1, as shown in the table of FIG. Examples include the rotating shaft 72 of the shutter 7 and the area of the inner wall surface of the chamber 2 facing the second area.

In addition, coating may be applied to all structures included in region 2 in the table of FIG. 2(b), or coating may be applied only to some structures. In addition, as shown in the table, the coating division is not limited to division by structure unit, and in one structure, a region to which the coating is applied, a region to which the coating is not applied, may be included. The same applies to other examples below.

In Example 2, in the apparatus configuration shown in FIG. 1, the horizontal distance from the evaporation source container in the chamber is less than the distance between the substrate and the evaporation source (distance between target and source: TS distance). is defined as a region (first region) in which the amount of film formation is relatively high. No coating is applied to the structures located in the first region. On the other hand, a region (second region) in which the amount of film formation is relatively low is defined as a region in the chamber that is separated from the evaporation source container in the horizontal direction by the distance TS or more. A coating is applied to the structure arranged in the second region.

In Example 2, as shown in the table of FIG. The side surface attachment prevention plate 22b, the partition wall attachment prevention plate 23b, and the substrate cradle attachment prevention plate 24b, which are located on the side closer to the source device 4, can be cited. Further, among the substrate cradle 25, the substrate carrier 51, the evaporation source shutter 7, the substrate shutters 91 and 92, and the inner wall surface of the chamber 2, which are positioned below the substrate 5 in the vertical direction, the region facing the first region (horizontal direction and a region located at a distance shorter than the TS distance in the vertical direction), and the like.

In addition, as shown in the table of FIG. 2B, the structures belonging to the second region in Example 2 include the region horizontally outside the reference on the bottom adhesion prevention plate 21, the film formation rate monitor 8, Side-surface attachment-preventing plate 22a, partition-wall attachment-preventing plate 23a, and substrate cradle attachment-preventing plate 24a, which are positioned farther from evaporation source device 4 in the horizontal direction, can be cited. Moreover, it is positioned above the substrate 5 in the vertical direction. The substrate holding arm 31, the partition wall 33, the area of the inner wall surface of the chamber 2 that faces the second area (the area that is longer than the TS distance in the horizontal and vertical directions), and the like.

In the second embodiment, the first region and the second region are divided by a horizontal distance (horizontal distance) and a vertical distance (vertical distance). It may be divided into the first area and the second area by a boundary centered on the opening and having a radius equal to the TS distance.

In Example 3, in the apparatus configuration shown in FIG. not performed. On the other hand, another structure intervenes as a shield between the evaporation source and the structure shielded by the other structure with respect to the evaporation source is a region where the amount of film formation is relatively low (second region ), and perform the coating.

In Example 3, structures belonging to the first region include, for example, a bottom anti-adhesion plate 21, side anti-adhesion plates 22a and 22b, a partition anti-adhesion plate 23b, and an evaporation source, as shown in the table of FIG. Of the shutter 7 and the film formation rate monitor 8, a monitor shutter 81 and substrate shutters 91 and 92 are listed.

In addition, as shown in the table of FIG. 2(b), the structures belonging to the second region in the third embodiment include a partition wall adhesion prevention plate 23a, substrate cradle adhesion prevention plates 24a and 24b, a substrate holding arm 31, and partition walls. 3
3. The substrate carrier 51, the monitor head 80 of the film formation rate monitor 8, and the inner wall surface of the chamber 2 are mentioned.

In addition, in Example 3, the structure belonging to the second region, that is, the structure shielded by another structure from the evaporation source, the structure always shielded by the other structure and the structure temporarily shielded by the other structure They are classified without distinguishing between shielded structures and the like. In addition to the above (A), the above (B) “exposure time to the evaporation source” is used to classify the structure considering the presence or absence of the shielded state and the non-shielded state during the film formation process, the length of each period, etc. A comparison of film formation amounts in consideration of the above will be described below.

(B) A comparison of the amount of film formation based on the "exposure time to the evaporation source" depends on, for example, the presence or absence of changes in posture and position with respect to the evaporation source during the film formation process, and the difference in the length of time of state change. can be compared. As shown in FIG. 1, in a deposition apparatus configured to process one substrate in one chamber, various shutters are kept closed during substrate replacement or alignment. There is a difference in the exposure time to the evaporation source among them. Therefore, in combination with (A), it is possible to classify the amount of film formation into a plurality of ranks, and determine the boundaries of the presence or absence of coating within these ranks.

(Examples 4-12)
Some specific examples will be described as Examples 4 to 12 with reference to FIGS.

FIG. 3 is a schematic diagram showing the configuration of the film forming apparatus 1 according to the embodiment of the present invention, showing an example of a drive mechanism not shown in FIG. 3 mainly shows only the structures described in Examples 4 to 12, and a part of the configuration shown in FIG. device 3, etc.) are omitted. Further, the configuration of the evaporation source device 4 is also shown by omitting illustration of the container 41, the heater 42, and the nozzle 43. As shown in FIG.

As shown in FIG. 3, in the film forming apparatuses 1 of Examples 4 to 12, substrate shutters 91 and 92 are rotatably supported in the chamber by rotating shafts 191 and 192, respectively. The substrate shutters 91 and 92 are configured to be movable between a closed position and an open position by rotating around rotary shafts 191 and 192, respectively, driven by a power source (not shown). The partition wall adhesion prevention plates 23 a and 23 are provided with accommodation recesses 123 a and 123 b that accommodate the substrate shutters 91 and 92 in the closed position so as to shield the evaporation source device 4 . That is, when the substrate shutters 91 and 92 are in the closed position where the substrate 5 is shielded from the evaporation source device 4, the substrate shutters 91 and 92 are positioned so as to directly face (expose) the evaporation source device 4, thereby shielding the substrate 5 from the evaporation source device 4. 4, the evaporation source device 4 is shielded by the partition prevention plates 23a and 23b.

FIG. 4A shows, among the structures shown in FIG. It is the table|surface which rank-divided the magnitude|size of the amount of film-forming into several steps from the viewpoint of (A) and (B). As shown in the table, there is a difference in the amount of film formed per unit time for each component between when the shielding portion 71 of the evaporation source shutter 7 is open and when it is closed. Furthermore, the length of time in the open state and the length of time in the closed state during the film formation process may also differ, for example, depending on the type of film forming material (difference in film formation rate due to difference in type).

FIG. 4(b) is a table summarizing examples of combinations of coated structures and non-coated structures in Examples 4 to 12. FIG. Note that Examples 4 to 10 are combination examples based on the premise of the apparatus configuration when the side wall inner surfaces 2a and 2b of the chamber 2 are not provided with the side anti-adhesion plates 22a and 22b.

Examples 4 to 8 are examples showing combinations of the presence or absence of coating when film formation is performed using, for example, a metal film formation material as a film formation material having a relatively fast (high) film formation rate. In this case, the film-forming time during the film-forming process becomes relatively short, and the closing time becomes relatively long. Therefore, the shielding portion 71 of the evaporation source shutter 7, which is exposed to the film-forming material for the longest time, is not coated, and the film-forming material is allowed to adhere positively (Examples 4 to 8). On the other hand, the substrate shutters 91 and 92 and the anti-adhesion plates 24a and 24b, which are shielded from the evaporation source by the shielding portion 71 when closed, are coated (Examples 4 to 6).

Depending on the type of the evaporation source shutter 7, the blocking part 71 may not completely block the nozzle opening of the evaporation source device 4, but may be arranged so as to face each other with a gap to form a closed state. Some are configured. That is, the evaporation source shutter 7 forms a closed state that prevents the deposition material from reaching the substrate 5 but does not positively prevent the deposition of the deposition material on the surrounding structures. In the case of such an evaporation source shutter 7, the substrate shutters 91 and 92, which are closer to the evaporation source device 4 than the substrate 5, are not coated and the film forming material is positively adhered as in the seventh embodiment. You can let it run.

At the open position, the substrate shutters 91 and 92 are accommodated in the accommodation recesses 123a and 123b of the partition prevention plates 23a and 23b. It is a structure that is shielded from the nozzle. Therefore, as in the eighth embodiment, only the substrate shutters 91 and 92 may be coated.

Examples 9 and 10 are examples showing combinations of the presence or absence of coating when film formation is performed using a film formation material having a relatively slow (low) film formation rate. In this case, the film-forming time during the film-forming process becomes relatively long, and the closing time becomes relatively short. That is, the open state time (open time) of the shielding portion 71 of the evaporation source shutter 7 becomes relatively long. In such a case, combinations such as those of the ninth and tenth embodiments can be used. It should be noted that the ninth embodiment is effective, for example, when the alignment process is omitted and the close time is considerably shortened. In addition, in the tenth embodiment, even if the closing time is shortened, the shielding portion 71 of the evaporation source shutter 7 near the evaporation source device 4 still has a large deposition amount of film forming material. The shielding portion 71 of 7 is also a combination in which no coating is applied.

The portions of the evaporation source shutter shielding portion 71 and the substrate shutters 91 and 92 may be coated only on the regions facing the evaporation source device 4 when they are in the closed position. In this embodiment, the lower surfaces of the shielding part 71 and the substrate shutters 91 and 92 may be the areas to be coated.

Examples 11 and 12 are examples of combinations of the presence or absence of coating in the apparatus configuration in which the chamber inner wall side surfaces 2a and 2b are provided with the side anti-adhesion plates 22a and 22b. Among the chamber inner wall side surfaces 2a and 2b, the chamber inner wall side surface 2b is relatively close to the evaporation source device 4, so that the amount of film formed is relatively large, and the effect of opening and closing the evaporation source shutter 7 is relatively large. Become. On the other hand, since the chamber inner wall side surface 2a is relatively far from the evaporation source device 4, the amount of film formed is relatively small, and the influence of the opening and closing of the evaporation source shutter 7 is also relatively small. Therefore, when side protection plates 22a and 22b are provided on the inner wall side surfaces 2a and 2b of the chamber, respectively, the combination of the presence or absence of the coating on the side protection plates 22a and 22b for the combinations of Examples 4 to 10 is changed. can be added. The eleventh embodiment is a combination of coating only the side adhesion prevention plate 22a, which is relatively distant from the evaporation source device 4, of the side adhesion prevention plates 22a and 22b. A twelfth embodiment is a combination in which the side anti-adhesion plates 22a and 22b are each coated.

(Examples 13 and 14)
Further specific examples will be described as Examples 13 and 14 with reference to FIGS. 5 and 6. FIG.

FIG. 5 is a schematic cross-sectional view of the film forming apparatus 1 according to the embodiment of the present invention, showing still another example of the driving mechanism, which is omitted from FIG. FIG. 5 also shows only the structures mainly described in Examples 13 and 14, and omits illustration of a part of the configuration shown in FIG. 1 (for example, the chamber 2 and the alignment device 3). . Further, the configuration of the evaporation source device 4 is also shown with the illustration of the container 41, the heater 42, and the nozzle 43 omitted.

As shown in FIG. 5, in the film forming apparatus 1 of Examples 13 and 14, the substrate shutters 91 and 92 are rotatably connected to each other by a rotating shaft 291, and the substrate shutter 92 is rotated by a rotating shaft 292 in the chamber. rotatably supported. The substrate shutter 91 and the substrate shutter 92 are driven by a power source (not shown) to rotate about rotation shafts 191 and 192 relative to the substrate shutter 92 and the substrate shutter 92 relative to the chamber. 4 and an open posture exposing the substrate 5 to the evaporation source device 4. As shown in FIG.

In the closed posture, the substrate shutters 91 and 92 extend so as to connect the regions blocking the space between the substrate 5 and the evaporation source device 4 . In the open position, they are folded so as to overlap each other at a position retreated from the facing space between the substrate 5 and the evaporation source device 4 . The substrate shutter 92 is shielded from the evaporation source device 4 by the evaporation source shutter 7 when it is in the closed position, and by the substrate shutter 91 when it is in the open position. On the other hand, the substrate shutter 91 is shielded from the evaporation source device 4 by the evaporation source shutter 7 when it is in the closed position, but is exposed to the evaporation source device 4 in the open position. .

FIG. 6A shows, among the structures shown in FIG. , and a table in which the amount of film formation is ranked in a plurality of stages. As shown in the table, in particular, the substrate shutter 91, compared to the substrate shutter 92, is in the open state (open) and closed state (closed) of the shielding part 71 of the evaporation source shutter 7. A large difference appears in the amount of film formation.

FIG. 6B is a table summarizing examples of combinations of coated structures and non-coated structures in Examples 13 and 14. FIG. The shielding part 71 of the evaporation source shutter 7, which is exposed to the film-forming material for the longest time, and the substrate shutter 91, which is exposed to the film-forming material when open, are not coated, and the film-forming material is actively removed. Make it stick. On the other hand, the substrate shutter 92, which is shielded from the evaporation source by the substrate shutter 91 when open, is coated. The anti-adhesion plates 24a and 24b may optionally be coated or not. The presence or absence of coating for other structures not described here may be appropriately combined with Examples 1 to 12 above.

(Examples 15 and 16)
Embodiments 15 and 16 will be described as further specific examples with reference to FIGS. 7 to 9. FIG.

FIG. 7 is a schematic plan view of a planar configuration of a film forming apparatus 100 according to Examples 15 and 16 of the present invention. As shown in FIG. 7, the chamber 200 includes a loading/unloading port 202 provided with a gate valve, and an evaporation source device 400 . The chamber 200 also includes an exhaust device (not shown) for adjusting the pressure inside the chamber 200 . The vapor deposition source device 400 is integrally provided with a heater (not shown) for vaporizing the film forming material accommodated in the container 401 .

The chamber 200 of this embodiment can accommodate two substrates 501 and 502 at a time. (when film processing is performed) or carrying out (when film forming processing is completed). That is, the two substrates 501 and 502 accommodated are alternately vapor-deposited. One substrate 501 is loaded/unloaded in the direction of arrow A in FIG. The other substrate 502 is loaded/unloaded in the direction of arrow B in FIG. The substrates 501 and 502 are subjected to a film formation process at the respective loaded positions.

The deposition source device 400 is configured to be movable within the chamber 200 so as to move relative to the substrates 501 and 502 placed within the chamber 200 . In the film formation process on one substrate 501, the relative position with respect to the substrate 501 is changed in the longitudinal direction of the substrate 501 ( It moves (reciprocating) so as to change in the substrate long side direction (arrow Y1 direction). As a result, the film-forming material vaporized from the deposition source container by the heating of the heater is evenly adhered and deposited on the surface of the substrate 501 to be processed. After completing the vapor deposition process on one substrate 501, it moves to a position facing the surface to be processed on the lower surface of the other substrate 502 via a mask (not shown). Then, at a position facing the surface to be processed of the substrate 502, it moves (reciprocates) so as to change the relative position with the substrate 502 in the longitudinal direction of the substrate 502 (arrow Y2 direction). As a result, the film-forming material vaporized from the vapor deposition source container by the heating of the heater is evenly adhered and deposited on the surface of the substrate 502 to be processed.

FIG. 8 is a schematic diagram showing the configuration of the evaporation source device 400 in Examples 15 and 16 of the present invention. The evaporation source device 400 in this embodiment is a so-called linear evaporation source, and has a configuration in which a plurality of openings of nozzles 403a and 403b of evaporation source containers 401a and 401b are arranged at predetermined intervals so as to form rows. (see FIG. 7). In this embodiment, two containers 401a and 401b containing film forming materials different from each other are provided, and two rows of nozzles are provided (see FIG. 7). The containers 401a and 401b are placed on the carriage 405, and as described above, the carriage 405 moves in the direction of the arrow Y1 (Y2) in the film forming process, thereby moving relative to the substrate 501 (502). Then, the film forming material is adhered and deposited. Note that heaters for heating and vaporizing the film forming materials in the containers 401a and 401b are not shown.

The evaporation source device 400 of this embodiment includes evaporation source shutters 700a and 700b. Evaporation source shutters 700a and 700b are provided with fixed shielding parts 713 and 714 erected on carriage 405 along the sides of containers 401a and 401b, respectively. In addition, movable shielding portions 701 and 702 rotatably attached to the upper ends of the fixed shielding portions 713 and 714 via rotation shafts 711 and 712 are provided. Each of the movable shielding portions 701 and 702 has an inward-opening two-door configuration, and is configured to perform an opening/closing operation by rotating around rotation shafts 711 and 712 by a power source (not shown). ing.

In the evaporation source shutter 700a corresponding to the container 401a, a pair of movable shielding portions 701a and 701b open and close. The movable shields 701a and 701b are arranged horizontally to form a single partition in a closed state that prevents the film-forming material sprayed from the container 401a from flying to the substrate. A shielding structure is formed surrounding 401a. At this time, the back surfaces 701a1 and 701b1 of the movable shielding portions 701a and 701b face the opening of the nozzle 403a of the container 401a. In the open state in which the film-forming material sprayed from the container 401a is allowed to fly to the substrate, the movable shielding portions 701a and 701b open inward to open the top of the containers 401a and 401b in the shielding structure. . In other words, the movable shielding portions 701a and 701b rotate to a posture of overlapping with the fixed shielding portions 713a and 713b, respectively. At this time, the surfaces 701a2 and 701b2 of the movable shielding portions 701a and 701b face the container 401a.

The configuration of the evaporation source shutter 700b corresponding to the container 401b is the same as the configuration of the above-described evaporation source shutter 700a, and the description thereof is omitted.

Since the film forming apparatus 100 according to the present embodiment can replace or align the other substrate 502 while forming a film on one of the substrates 501, the film forming apparatus 100 according to Examples 1 to 14 can be used. There is no time to wait for substrate replacement or alignment, such as. That is, in the film forming apparatus 100 according to the present embodiment, the evaporation source shutters 700a and 700b are closed when the film formation on one substrate 501 is completed and the evaporation source is moved under the other substrate 502. This is the period until the device 400 is moved. Therefore, the evaporation source shutters 700a and 700b of the film forming apparatus 100 according to the present embodiment are relatively longer in the open state than in the closed state. Compared to the source shutter 7, the open time is considerably longer.

FIG. 9 is a table summarizing examples of combinations of coated structures and non-coated structures in Examples 15 and 16. FIG.

In the fifteenth embodiment, the fixed shielding portions 713 and 714, which are exposed to the film forming material for the longest time, are not coated and the film forming material is allowed to actively adhere to them. Moreover, the film forming apparatus 100 according to the present embodiment does not have a substrate shutter because it does not need to wait for alignment unlike the film forming apparatuses 1 according to the first to fourteenth embodiments. Therefore, various anti-adhesion plates facing the evaporation source device 400 (for example, anti-adhesion plates corresponding to the anti-adhesion plates 24a and 24b of the film deposition apparatuses 1 according to Examples 1 to 14, and the anti-adhesion plates provided on the inner wall surface of the chamber 200) Anti-adhesion plates, etc.) are also not coated because the exposure time is long. On the other hand, when closed, the back surfaces 701a1 and 701b1 of the movable shielding portions 701a and 701b facing the opening of the nozzle 403a of the container 401a are exposed to the film forming material for a relatively short time. apply. Similar coating combinations may be employed for the movable shields 702a, 702b corresponding to the container 402a.

Example 16 is a combination in which the presence or absence of coating is changed between the front surfaces 701a2 and 701b2 and the back surfaces 701a1 and 701b1 of the movable shielding portions 701a and 701b. That is, the back surfaces 701a1 and 701b1 are coated because the time during which they are exposed to the film-forming material when closed is relatively shorter than the time when they are not directly exposed to the film-forming material when they are open. On the other hand, the surfaces 701a2 and 701b2 are not coated because the exposure time when they are open facing the container 401a is relatively longer than the time when they are not facing the container 401a when they are closed. Similar coating combinations may be employed for the movable shields 702a, 702b corresponding to the container 402a.

In Examples 15 and 16, the film forming apparatus 100 having no substrate shutter like the film forming apparatus 1 according to Examples 1 to 14 has been described. In that case, the presence or absence of coating for other structures not described here may be appropriately employed in the same combinations as in Examples 1 to 14 above.

In addition, in the fifteenth and sixteenth embodiments, the configuration in which the movable shielding portions 701 and 702 open inward has been described, but the present invention can also be applied to configurations in which the movable shielding portions 701 and 702 open outward, for example. in this case,
A combination of coating both the front and back surfaces of the movable shielding portions 701 and 702 is preferable. In addition, the configuration of the linear evaporation source (the number of containers and nozzle rows) and the configuration of the evaporation source shutter (the two-door opening configuration) shown in Examples 15 and 16 are merely exemplary configurations, and the above configurations is not limited to For example, the number of containers and nozzle rows, the types of film-forming materials to be accommodated, the number of substrates to be accommodated simultaneously in the chamber, the scanning direction of the evaporation source device with respect to the substrates, and the like may differ from the above configurations. Also, the structure of the shielding portion of the evaporation source shutter may be, for example, a structure that opens and closes with a single door.

In each of the above embodiments, the structure of the deposit-up was described in which the film-forming surface of the substrate (the surface to be film-formed) faced downward in the direction of gravity during the film-forming process. It may be a deposition-down configuration in which the film is formed while facing upward in the direction of gravity. Alternatively, a side deposition configuration may be used in which the substrate is set vertically and the film formation is performed in a state in which the film formation surface is substantially parallel to the direction of gravity.

Furthermore, in each of the above examples, a combination of the presence or absence of a coating suitable for a specific film-forming material, that is, a combination suitable for the difference in film-forming rate due to the difference in the type of material was exemplified. However, when a plurality of types of film forming materials are used by switching in one film forming apparatus (film forming chamber), it is preferable to switch the combination of coatings each time according to the type of material. For example, by preparing an anti-adhesion plate with coating and an anti-adhesion plate without coating in advance and replacing them according to the type of material, it is possible to combine with or without coating according to the type of material. You can do it.

As described above, in each of the above-described embodiments, the presence or absence of coating is selected based on differences in arrangement of the plurality of structures arranged in the chamber, particularly differences in arrangement and exposure time to the evaporation sources. In other words, the maintenance frequency can be reduced by coating a structure with a relatively low film formation rate so that the film formation material does not adhere to the structure. On the other hand, for structures with a relatively high deposition rate, where the maintenance frequency does not change much even if coating is applied, we rather actively adhere the deposition material to the chamber. Useless scattering of film-forming materials can be suppressed. This makes it possible to improve the efficiency of maintenance management of the entire apparatus.

<Method for manufacturing electronic device>
A method of manufacturing an electronic device using the film forming apparatus described above will be described. Here, as an example of an electronic device, a case of an organic EL element used in a display device such as an organic EL display device will be described. Note that the electronic device according to the present invention is not limited to this, and may be a thin film solar cell or an organic CMOS image sensor. This embodiment has a step of forming an organic film on the substrate 5 using the film forming method described above. Moreover, after forming the organic film on the substrate 5, a step of forming a metal film or a metal oxide film is included. The structure of the organic EL display device 600 obtained by such steps will be described below.

FIG. 10(a) shows an overall view of the organic EL display device 600, and FIG. 10(b) shows a cross-sectional structure of one pixel. As shown in FIG. 10A, in a display region 61 of an organic EL display device 600, a plurality of pixels 62 each having a plurality of light emitting elements are arranged in a matrix. Each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. The term "pixel" as used herein refers to a minimum unit capable of displaying a desired color in the display area 61. FIG. In the case of the organic EL display device of this figure, the pixel 62 is configured by a combination of a first light emitting element 62R, a second light emitting element 62G, and a third light emitting element 62B that emit light different from each other. The pixel 62 is often composed of a combination of a red light-emitting element, a green light-emitting element and a blue light-emitting element, but may be a combination of a yellow light-emitting element, a cyan light-emitting element and a white light-emitting element. It is not limited. Further, each light-emitting element may be configured by laminating a plurality of light-emitting layers.

In addition, one pixel is displayed by using a color filter in which a plurality of light emitting elements that emit the same light are used to form the pixel 62, and a plurality of different color conversion elements are arranged in a pattern so as to correspond to the respective light emitting elements. A desired color may be displayed in the region 61 . For example, a color filter may be used in which the pixels 62 are composed of at least three white light-emitting elements, and red, green, and blue color conversion elements are arranged so as to correspond to the respective light-emitting elements. Alternatively, a color filter may be used in which the pixels 62 are composed of at least three blue light-emitting elements, and red, green, and colorless color conversion elements are arranged so as to correspond to the respective light-emitting elements. In the latter case, by using a quantum dot color filter (QD-CF) using a quantum dot (QD) material as a material constituting the color filter, a normal organic EL that does not use a quantum dot color filter The display color gamut can be wider than that of the display device.

FIG. 10(b) is a schematic partial cross-sectional view taken along line AB in FIG. 10(a). The pixel 62 includes a first electrode (anode) 64, a hole transport layer 65, any one of the light emitting layers 66R, 66G, and 66B, an electron transport layer 67, and a second electrode (cathode) 68 on the substrate 5. and an organic EL element. Among these layers, the hole transport layer 65, the light emitting layers 66R, 66G and 66B, and the electron transport layer 67 correspond to organic layers. In this embodiment, the light-emitting layer 66R is an organic EL layer that emits red, the light-emitting layer 66G is an organic EL layer that emits green, and the light-emitting layer 66B is an organic EL layer that emits blue. When color filters or quantum dot color filters are used as described above, the color filters or quantum dot color filters are arranged on the light emitting side of each light emitting layer, that is, on the upper or lower portion of FIG. 10(b). However, illustration is omitted.

The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements (also referred to as organic EL elements) that emit red, green, and blue, respectively. Also, the first electrode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the second electrode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. An insulating layer 69 is provided between the first electrodes 64 to prevent short-circuiting between the first electrodes 64 and the second electrodes 68 due to foreign matter. Furthermore, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer P is provided to protect the organic EL element from moisture and oxygen.

Next, an example of a method for manufacturing an organic EL display device as an electronic device will be specifically described. First, a substrate 5 having a circuit (not shown) for driving an organic EL display device and a first electrode 64 formed thereon is prepared.

Next, a resin layer such as acrylic resin or polyimide is formed by spin coating on the substrate 5 on which the first electrode 64 is formed, and the resin layer is subjected to lithography to form an opening at the portion where the first electrode 64 is formed. An insulating layer 69 is formed by patterning as formed. This opening corresponds to a light emitting region where the light emitting element actually emits light.

Next, the substrate 5 on which the insulating layer 69 is patterned is carried into the first film forming apparatus, the substrate is held by the substrate holding unit, and the hole transport layer 65 is placed on the first electrode 64 in the display area. It is deposited as a common layer. The hole transport layer 65 is deposited by vacuum deposition. Since the hole transport layer 65 is actually formed to have a size larger than that of the display area 61, a high-definition mask is not required. Here, the film formation apparatus used in the film formation in this step and the film formation of each layer below is the film formation apparatus described in any of the above embodiments.

Next, the substrate 5 with the hole transport layer 65 formed thereon is carried into the second film forming apparatus and held by the substrate holding unit. The substrate and the mask are aligned, the substrate is placed on the mask, and the red-emitting light-emitting layer 66R is formed on the portion of the substrate 5 where the red-emitting element is to be arranged. According to this example, the mask and the substrate can be satisfactorily overlapped, and highly accurate film formation can be performed.

Similarly to the deposition of the light emitting layer 66R, a green light emitting layer 66G is deposited by the third deposition apparatus, and a blue light emitting layer 66B is deposited by the fourth deposition apparatus. After the formation of the light-emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed over the entire display area 61 by the fifth film forming apparatus. Each of the light emitting layers 66R, 66G, and 66B may be a single layer, or may be a layer in which a plurality of different layers are laminated. The electron transport layer 65 is formed as a layer common to the three color light-emitting layers 66R, 66G, and 66B. In this embodiment, the electron transport layer 67 and the light emitting layers 66R, 66G and 66B are formed by vacuum deposition.

Subsequently, a second electrode 68 is deposited on the electron transport layer 67 . The second electrode may be formed by vacuum deposition or may be formed by sputtering. After that, the substrate on which the second electrode 68 is formed is moved to a sealing device, and the protective layer P is formed by plasma CVD (sealing step), whereby the organic EL display device 600 is completed. Although the protective layer P is formed by the CVD method here, it is not limited to this, and may be formed by the ALD method or the inkjet method.

If the substrate 5 on which the insulating layer 69 is patterned is carried into the film-forming apparatus and is exposed to an atmosphere containing moisture and oxygen until the film-forming of the protective layer P is completed, the light-emitting layer made of the organic EL material will be damaged. It may deteriorate due to moisture and oxygen. Therefore, in this example, substrates are carried in and out between film forming apparatuses under a vacuum atmosphere or an inert gas atmosphere.

DESCRIPTION OF SYMBOLS 1... Film-forming apparatus, 2... Vacuum chamber, 21-24... Anti-adhesion plate, 3... Alignment apparatus, 4... Evaporation source apparatus, 5... Substrate, 7... Evaporation source shutter, 8... Film-forming rate monitor, 91, 92 …Substrate shutter

Claims (27)

a chamber in which the substrate is housed;
an evaporation source disposed within the chamber for emitting deposition material;
a plurality of structures disposed within the chamber;
In a film forming apparatus comprising
The plurality of structures are
a first structure having a first film formation amount based on the amount of the film forming material arriving from the evaporation source per unit time and the exposure time to the evaporation source;
a second structure in which the amount of film formation is a second amount of film formation greater than the amount of first film formation;
The first structure is coated to reduce the deposition amount of the deposition material,
The film forming apparatus, wherein the coating is not applied to the second structure. The second structure according to claim 1, wherein the second structure is an anti-adhesion plate attached to the first structure so as to shield the first structure from the evaporation source. Deposition equipment. 3. The film forming apparatus according to claim 1, wherein the distance from the first structure to the evaporation source is longer than the distance from the second structure to the evaporation source. 3. The exposure time during which the first structure is exposed to the evaporation source is shorter than the exposure time during which the second structure is exposed to the evaporation source. The film-forming apparatus of any one of 1 item|term. 5. The first structure is located on the side opposite to the side where the vaporized film forming material is discharged with respect to the nozzle opening surface of the evaporation source. The film forming apparatus according to item 1. 6. The second structure according to any one of claims 1 to 5, characterized in that the second structure is located on the side from which the vaporized film forming material is discharged with respect to the nozzle opening surface of the evaporation source. deposition equipment. The film formation according to any one of claims 1 to 6, wherein the distance between the evaporation source and the first structure is equal to or greater than the vertical distance between the evaporation source and the substrate. Device. The component according to any one of claims 1 to 7, wherein the distance between the evaporation source and the second structure is smaller than the vertical distance between the evaporation source and the substrate. membrane device. 9. The film forming apparatus according to any one of claims 1 to 8, further comprising a shield that shields the film forming material between the evaporation source and the first structure. . The film forming apparatus according to any one of claims 1 to 9, wherein the second structure directly faces the nozzle opening of the evaporation source. When film formation is performed, the substrate is positioned vertically above the evaporation source,
The film forming apparatus according to any one of claims 1 to 10, wherein the first structure is located on the side opposite to the evaporation source with respect to the film forming surface of the substrate. When film formation is performed, the substrate is positioned vertically above the evaporation source,
The film forming apparatus according to any one of claims 1 to 11, wherein the second structure is positioned on the side of the evaporation source with respect to the film forming surface of the substrate. a chamber in which the substrate is housed;
an evaporation source disposed within the chamber for emitting deposition material;
a plurality of structures disposed within the chamber;
In a film forming apparatus comprising
The plurality of structures are
a first structure;
a second structure positioned to shield the first structure with respect to the evaporation source;
The first structure is coated to reduce the deposition amount of the deposition material,
The film forming apparatus, wherein the coating is not applied to the second structure. a chamber in which the substrate is housed;
an evaporation source disposed within the chamber for emitting deposition material;
a plurality of structures disposed within the chamber;
In a film forming apparatus comprising
the plurality of structures includes a first structure and a second structure;
the distance from the first structure to the evaporation source is longer than the distance from the second structure to the evaporation source;
The first structure is coated to reduce the deposition amount of the deposition material,
The film forming apparatus, wherein the coating is not applied to the second structure. a chamber in which the substrate is housed;
an evaporation source disposed within the chamber for emitting deposition material;
a plurality of structures disposed within the chamber;
In a film forming apparatus comprising
the plurality of structures includes a first structure and a second structure;
the exposure time of the first structure to the evaporation source is shorter than the exposure time of the second structure to the evaporation source;
The first structure is coated to reduce the deposition amount of the deposition material,
The film forming apparatus, wherein the coating is not applied to the second structure. a chamber in which the substrate is housed;
an evaporation source disposed within the chamber for emitting deposition material;
a plurality of structures disposed within the chamber;
In a film forming apparatus comprising
The plurality of structures are
a first structure located on the side opposite to the side from which the film-forming material is discharged with respect to the nozzle opening surface of the evaporation source;
a second structure located on the side from which the film forming material is discharged with respect to the nozzle opening surface;
The first structure is coated to reduce the deposition amount of the deposition material,
The film forming apparatus, wherein the coating is not applied to the second structure. a chamber in which a substrate to be film-formed is accommodated;
an evaporation source disposed in the chamber for evaporating a film forming material;
a plurality of structures disposed within the chamber;
In a film forming apparatus comprising
the plurality of structures includes a first structure and a second structure;
the distance between the evaporation source and the first structure is greater than or equal to the vertical distance between the evaporation source and the substrate;
the distance between the evaporation source and the second structure is smaller than the vertical distance between the evaporation source and the substrate;
The first structure is coated to reduce the deposition amount of the deposition material,
The film forming apparatus, wherein the coating is not applied to the second structure. a chamber in which the substrate is housed;
an evaporation source disposed within the chamber for emitting deposition material;
a plurality of structures disposed within the chamber;
In a film forming apparatus comprising
The plurality of structures are
a first structure disposed between itself and the evaporation source via a shield;
a second structure disposed directly facing the nozzle opening of the evaporation source, wherein the first structure is coated to reduce the deposition amount of the deposition material;
The film forming apparatus, wherein the coating is not applied to the second structure. a chamber in which the substrate is housed;
an evaporation source disposed within the chamber for emitting deposition material;
a plurality of structures disposed within the chamber;
In a film forming apparatus comprising
When film formation is performed, the substrate is positioned vertically above the evaporation source,
The plurality of structures are
a first structure located on the side opposite to the evaporation source with respect to the film formation surface of the substrate;
a second structure located on the side of the evaporation source with respect to the film formation surface;
The first structure is coated to reduce the deposition amount of the deposition material,
The film forming apparatus, wherein the coating is not applied to the second structure. The first structure includes
- an evaporation source shutter for opening and closing the opening of the evaporation source;
a substrate shutter movable between a closed position that blocks a substrate from the evaporation source and an open position that does not block the substrate, wherein the substrate shutter is blocked from the evaporation source by another structure in the open position;
・Anti-adhesion plate provided on the holder that holds the substrate,
・Deposition rate monitor,
20. The film forming apparatus according to any one of claims 1 to 19, wherein at least one of In the second structure,
- an evaporation source shutter for opening and closing the opening of the evaporation source;
a substrate shutter that is movable between a closed position that blocks a substrate from the evaporation source and an open position that does not block the substrate, the substrate shutter being exposed to the evaporation source even in the open position;
・Anti-adhesion plate provided on the holder that holds the substrate,
- an inner wall of said chamber;
・Monitor shutter that opens and closes the monitor opening of the deposition rate monitor,
21. The film forming apparatus according to any one of claims 1 to 20, comprising at least one of The component according to any one of claims 1 to 19, wherein the first structure and the second structure are respectively anti-adhesion plates arranged in the chamber. membrane device. 23. The film forming apparatus according to any one of claims 1 to 22, wherein the coating is formed of a material having a hexane contact angle of 40 degrees or more. 24. The film forming apparatus according to claim 23, wherein the material is DLC (Diamond Like Carbon) or fluorine-containing carbon (fluorocarbon). The film forming apparatus according to any one of claims 1 to 24, wherein the coating has heat resistance of 100°C or higher. A film forming method, comprising forming a film on a substrate using the film forming apparatus according to any one of claims 1 to 25. 27. A method of manufacturing an electronic device, comprising the step of forming an organic film on a substrate by using the film forming method according to claim 26.

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