TW201936956A - Vapor deposition apparatus - Google Patents

Abstract

The invention provides a vapor deposition apparatus which can reduce the difference between the temperature of a substrate, a vapor deposition mask and the like to be adjusted and a target temperature. At least one of the substrate (W) and the vapor deposition mask (M) is an object to be adjusted in temperature, and the vapor deposition apparatus is provided with: a resistance heater (22) that adjusts the temperature of the object to be adjusted in thermal contact with the object to be adjusted; and a temperature adjustment unit (33) that controls the current supplied to the resistance heater(22) on the basis of the temperature of the object to be adjusted. The temperature higher than the temperature of the object to be adjusted when the object to be adjusted is carried into a vacuum tank(16) is the target temperature of the object to be adjusted. The temperature adjustment unit (33) sets the target temperature at which the vapor deposition material is discharged from a vapor deposition source (11) to a temperature reached only by the heat supply of the resistance heater (22) and the stop of the heat supply.

Description

Vapor deposition device

The present invention relates to a vapor deposition device including a heating portion that heats a substrate.

In the vapor deposition device, a vapor deposition cover is placed between the substrate deposition surface and the vapor deposition source, and a pattern along the shape of the vapor deposition cover opening is formed on the substrate formation surface. In the vapor deposition apparatus, there is proposed a technique for adjusting the temperature of the substrate or the cover for the purpose of suppressing the thermal expansion of the substrate or the cover within a specific range (see, for example, Patent Document 1).

[Previous Technical Literature]
[Patent Literature]
[Patent Document 1] JP-A-2017-8409

[Problem to solve the problem]
However, in the temperature regulation technique of the substrate or the cover, a technique of circulating the temperature-regulating water is used for the member that is in contact with the member supporting the substrate or the cover. On the other hand, in controlling the temperature of the tempering water circulation, it is necessary to adjust the temperature-increasing tempering water to a specific temperature. At this time, since the heat capacity of the tempering water is large, it takes a lot of time to adjust the temperature of the tempering water. As a result, it is difficult to adjust the temperature of the tempered water with temperature changes due to vapor deposition, and the temperature difference between the substrate temperature and the vapor deposition hood is large each time the vapor deposition is performed.

[Means for solving problems]
One aspect is an evaporation device. The vapor deposition device includes: a vapor deposition source located in the vacuum chamber; and a holding mechanism that holds the substrate while the substrate surface faces the vapor deposition source, and holds a vapor deposition cover between the vapor deposition source and the substrate; In the electric resistance heater, at least one of the substrate and the vapor deposition cover are temperature-adjusting objects, and are in thermal contact with the temperature adjustment target to adjust a temperature of the object to be adjusted, wherein a temperature higher than a temperature of an adjustment target when the vacuum chamber is carried in is The target temperature of the target is adjusted, and the target temperature when the vapor deposition material is discharged from the vapor deposition source is set to supply only the temperature reached by the heat of the electric resistance heater.

According to the vapor deposition device described above, the heat adjustment for the adjustment target is realized by the electric resistance heater and the temperature adjustment unit. At this time, the temperature higher than the temperature of the adjustment target when the vacuum tank is moved is set as the target temperature to be adjusted. Then, the current supplied to the resistance heater is controlled to adjust the temperature of the object to reach the target temperature. Therefore, for example, since the target temperature is close to room temperature, the adjustment target does not need to be particularly cooled, and the temperature of the adjustment target can reach the target temperature only by the heat supplied from the resistance heater. As a result, compared with the temperature adjustment using the tempering water, it is not necessary to additionally use a structure for cooling the adjustment target, and the difference between the temperature of the adjustment target of the substrate or the vapor deposition hood and the target temperature can be reduced.

In the vapor deposition device, the holding means may hold the electric resistance heater, and when the vapor deposition material is discharged from the vapor deposition source, the substrate, the vapor deposition cover, and the electric resistance heater are integrated with each other on the substrate. Rotate in the circumferential direction. According to this vapor deposition device, the vapor deposition material is discharged from the vapor deposition source, and the substrate, the vapor deposition cover, and the electric resistance heater are rotated in the circumferential direction of the substrate. Therefore, the uniformity of the vapor deposition material on the substrate can be improved. Then, in a state where the uniformity of the vapor deposition material is improved, the difference between the temperature to be adjusted and the target temperature can be reduced, so that the shape uniformity of the vapor deposition material adhering to the substrate can be improved.

In the vapor deposition device, the adjustment target is the substrate; the electric resistance heater is housed in a heat conduction plate that can be in contact with the back surface of the substrate; and the holding mechanism may hold the heat conduction plate, and the vapor deposition material may be vaporized from the vapor deposition material. When the plating source is discharged, the substrate and the vapor deposition cover are integrated with the heat conduction plate, and are rotated in the circumferential direction of the substrate. According to this vapor deposition apparatus, since the heat of the electric resistance heat conduction plate is brought into contact with the surface of the back surface of the substrate, the heat of the electric resistance heater is transmitted to the substrate, so that the followability of the substrate temperature with respect to the temperature of the electric resistance heater can be improved.

In the vapor deposition device, when the vapor deposition material is discharged from the vapor deposition source, the substrate, the vapor deposition cover, and the vapor deposition cover are in a state in which the surface of the substrate is in contact with the vapor deposition cover surface. The heat conduction plate is integrated and rotated in the circumferential direction of the substrate.

The vapor deposition device may include: an upper structure connected to the holding mechanism; a lower structure supporting the upper structure; and a connecting portion sandwiching the upper structure and the lower structure and connecting the upper structure And the lower structure, wherein the connecting portion has a vibration-proof function and suppresses vibration transmitted from the front tree lower structure to the upper structure. According to this vapor deposition device, the deviation of the relative position of the adjustment target and the electric resistance heater due to the vibration is suppressed. As a result, the positional accuracy of the adjustment target with respect to the electric resistance heater is improved, so that the temperature adjustment accuracy of the adjustment target can also be improved.

In the vapor deposition device, the adjustment target is the substrate, and the vapor deposition device includes an imaging unit that images the vapor deposition cover and the back surface of the substrate facing the back surface of the substrate, and a positioning portion that is imaged by the imaging unit. As a result, the position of the vapor deposition cover is integrated with the position of the substrate, wherein the positioning portion may also reflect the first image of the light reflected by the flat portion of the substrate and the light reflected by the inclined portion connecting the flat portion. The boundary between the flat portion and the inclined surface portion of the contrast of the second image is extracted as a part of the outer shape of the substrate, and a portion of the extracted outer shape is used to detect the position of the substrate.

The slope portion that determines the outline of the substrate is usually a curved surface having a specific curvature in the thickness direction of the substrate. When the image of the oblique surface is photographed, the brightness is gradually lowered toward the outline of the substrate, and the amount of blurring is gradually increased. Therefore, from the technique of detecting the outline of the substrate by photographing the image of the inclined face, the detected position of the outline causes a large error. On the other hand, the boundary between the inclined surface portion and the flat portion is a boundary that largely changes in the direction of the substrate surface, and is, for example, a portion from the direction facing the flat portion, and is also a portion that can clearly detect the boundary. According to the above configuration, the positioning unit detects the position of the substrate from the boundary between the flat portion of the first image of the light reflected by the flat portion and the second image of the light reflected by the inclined surface, and the slope portion. Improve the accuracy of detecting the position of the substrate. As a result, not only the accuracy of the substrate position but also the accuracy of the substrate position with respect to the electric resistance heater is improved, so that the adjustment accuracy of the temperature at the substrate can be improved.

Hereinafter, an embodiment of a vapor deposition device will be described with reference to Figs. 1 to 4 . In addition, in the first drawing and the fourth drawing, for the sake of convenience of explanation, the mechanical connection between the constituent elements constituting the vapor deposition device is indicated by a broken line, and the electrical connection between the constituent elements constituting the vapor deposition device is indicated by a solid line.

As shown in the first figure, the vapor deposition apparatus includes a vapor deposition source 11 to discharge a vapor deposition material, a plurality of vapor deposition cameras 12, a substrate holder 13, a support substrate W, a cover base 14, and a vapor deposition cover M; 15; and the communication agency 20. The substrate holder 13 and the cover base 14 are examples of the holding mechanism. The vacuum chamber 16 that houses the vapor deposition source 11, the substrate holder 13 and the cover base 14 is an example of a lower structure, and supports a holding mechanism. The inside of the vacuum chamber 16 is connected to an exhaust system 17 such as a vacuum pump, and is decompressed to a specific pressure.

The substrate W carried into the vacuum chamber 16 is, for example, a glass substrate covering the light reflective film or a substrate having a non-transmissive substrate. The substrate W includes a surface WF and a back surface WR, and a plurality of substrate marks Wm are placed on the surface WF of the substrate W (see the second drawing). The substrate mark Wm located on the surface WF is detected by, for example, each device other than the vapor deposition device applied to the substrate W, and is used for integration of the position of the substrate W between the devices. The outer peripheral portion of the back surface WR of the substrate W includes a flat portion Wp1 (see the second drawing) and a slope portion Wp2 (see the second drawing) connected to the flat portion Wp1. The boundary between the flat portion Wp1 and the inclined surface portion Wp2 is detected by the photographing by the vapor deposition camera 12, and is used to determine the position of the substrate W in the vapor deposition device.

The vapor deposition cover M carried into the vacuum chamber 16 has a plurality of openings for forming a specific pattern on the surface WF of the substrate W. The vapor deposition cover M has a size protruding from the substrate W in the entire circumferential direction of the substrate W. The vapor deposition cover M has a plurality of cover symbols Mm (see the second figure) at a portion protruding from the substrate W. A plurality of mask marks Mm are detected by the vapor deposition camera 12 for determining the position of the vapor deposition cover M of the vapor deposition device.

The vapor deposition source 11 forms a thin film of a vapor deposition material on the surface WF of the substrate W. The vapor deposition source 11 is, for example, a resistance heating type vapor deposition source, an induction heating type vapor deposition source, or a vapor deposition source including an electron beam. The vapor deposition material is a material which is sublimated by heating by the vapor deposition source 11 and is a film material formed on the surface WF of the substrate W. The vapor deposition material is, for example, an organic substance, but may be an inorganic substance.

The substrate holder 13 is located between a plurality of vapor deposition cameras 12 and a vapor deposition source 11. The substrate holder 13 determines the virtual arrangement area WA as the arrangement area of the substrate W. The substrate holder 13 supports the substrate W carried into the vacuum chamber 16. The substrate holder 13 can carry out the substrate W from the vacuum chamber 16 to other chambers. The substrate holder 13 faces the vapor deposition source 11 side (lower side in the first drawing) on the surface WF of the substrate W, and supports the outer peripheral portion of the surface WF in the arrangement area WA. That is, the substrate holder 13 faces the plurality of vapor deposition cameras 12 with the back surface WR of the substrate W, and holds the substrate W between the plurality of vapor deposition cameras 12 and the vapor deposition source 11.

Further, the substrate mark Wm located on the surface WF is, for example, because an obstacle such as the substrate holder 13 exists, so it is difficult to photograph from the side of the facing surface WF. Further, the substrate mark Wm located on the surface WF is, for example, because the substrate W does not have sufficient transparency or is opaque, so that it is difficult to image from the side facing the back surface WR. In other words, in a state where the substrate holder 13 supports the substrate W, it is difficult to detect the position of the substrate mark Wm by the vapor deposition camera 12.

The cover base 14 is located between the plurality of vapor deposition cameras 12 and the vapor deposition source 11. The cover base 14 determines the virtual arrangement area MA as the arrangement area of the vapor deposition cover M. The cover base 14 is placed on a clamp hook 8F that is fixed to the support frame 18. The cover base 14 supports the outer peripheral portion of the vapor deposition cover M in the arrangement area MA. The cover base 14 faces the vapor deposition cover M with the surface WF of the substrate W, and arranges the vapor deposition cover M between the substrate W and the vapor deposition source 11.

Each of the vapor deposition cameras 12 is an example of a photographing unit, such as a CCD camera. In each of the vapor deposition cameras 12, the position of the optical axis 2A of one vapor deposition camera 12 is fixed with respect to the position of the optical axis 2A of the other vapor deposition camera 12. Each of the vapor deposition cameras 12 captures each part of the outer peripheral portion of the substrate W. Each of the vapor deposition cameras 12 captures a boundary between the flat portion Wp1 of the back surface WR of the substrate W and the inclined surface portion Wp2. Moreover, each vapor deposition camera 12 images each part of the surface of the vapor deposition cover M. Each of the vapor deposition cameras 12 captures a cover symbol Mm on the surface of the vapor deposition cover M.

Each of the vapor deposition cameras 12 is fixed to a support frame 18 that is mounted in the vacuum chamber 16. The support frame 18 is an example of an upper structure, and supports the vapor deposition camera 12, the drive source 15, and the like. The support frame 18 is inserted in the vertical direction, and the vapor deposition camera 12 is provided with an imaging hole 8H for capturing the inside of the vacuum chamber 16. Each of the imaging holes 8H has one hole in each of the vapor deposition cameras 12. The position of the optical axis 2A of one vapor deposition camera 12 is fixed with respect to the position of the optical axis 2A of the other vapor deposition camera 12.

The support frame 18 is mechanically coupled to the vacuum chamber 16 via the connection portion 19. In other words, the vapor deposition device has a support frame between the vapor deposition camera 12, the drive source 15, the transmission mechanism 20, and the like, and the respective positions of the substrate W and the vapor deposition cover M, and the vacuum chamber 16. 18 and the connecting portion 19. The connection portion 19 includes an anti-vibration mechanism that suppresses vibration transmitted from the vacuum chamber 16 to the support frame 18. The connecting portion 19 is, for example, a vibration-proof rubber, and in particular, suppresses the number of natural vibrations of the support frame 18 or the number of natural vibrations of each structure supported by the support frame 18.

Each of the vapor deposition cameras 12 is connected to the image processing unit 31. The image processing unit 31 is an example of a positioning unit, and uses a image captured by each vapor deposition camera 12 to perform a specific process of the center (substrate position) of the substrate W. The image processing unit 31 performs a specific process of the vapor deposition cover M center (cover position) using the images captured by the respective vapor deposition cameras 12. The substrate position and the cover position determined by the image processing unit 31 are used to integrate the position of the substrate W with the position of the vapor deposition cover M.

The image processing unit 31 includes a central processing unit and a memory, and is not limited to the specific processing for processing the substrate position by the software or the specific processing of the mask position. For example, the image processing unit 31 may include a dedicated hardware (application-specific integrated circuit: ASIC), and perform at least a part of processing in various processes. In other words, the image processing unit 31 is configured to include one or more processors (microcomputers) that operate with one or more dedicated hardware circuits such as an ASIC, a computer program (software), or a combination of these.

The drive source 15 outputs the power transmitted to the communication mechanism 20. The transmission mechanism 20 includes a heat conduction plate 21, a resistance heater 22, and a temperature sensor 23. Further, the transmission mechanism 20 includes a mechanism for connecting the drive source 15 and the substrate holder 13, a mechanism for connecting the drive source 15 and the cover base 14, and a mechanism for connecting the drive source 15 and the heat transfer plate 21.

The heat conduction plate 21 has a surface that can face the back surface WR of the substrate W. The surface of the heat conduction plate 21 is configured to conduct heat of the heat conduction plate 21 to the surface of the substrate W. The electric resistance heater 22 and the temperature sensor 23 are located inside the heat conduction plate 21. The heat conduction plate 21 communicates the heat of the electric resistance heater 22 to the substrate W by coming into contact with the surface of the back surface WR of the substrate W. The heat transfer plate 21 raises the temperature of the substrate W by the temperature rise of the electric resistance heater 22. The heat conduction plate 21 cools the substrate W by the temperature drop of the electric resistance heater 22 or the separation of the back surface WR of the substrate W from the heat conduction plate 21.

The electric resistance heater 22 heats the heat conduction plate 21. The temperature adjustment unit 33 is connected to the electric resistance heater 22 and supplies a current for heating the heat conduction plate 21 to the electric resistance heater 22. The electric resistance heater 22 is connected to the temperature adjustment unit 33, and is heated by the current supplied from the temperature adjustment unit 33.

The temperature sensor 23 detects the temperature of the heat conduction plate 21. The temperature adjustment unit 33 is connected to the temperature sensor 23, and acquires the temperature detected by the temperature sensor 23 from the temperature sensor 23.

The temperature adjustment unit 33 has data relating to the temperature of the heat conduction plate 21 obtained from the temperature sensor 23 and the temperature of the substrate W as an example of the adjustment target. Therefore, the temperature adjustment unit 33 can grasp the temperature of the substrate W from the temperature of the heat conduction plate 21 obtained by the temperature sensor 23. Thereby, the temperature adjustment portion 33 can control the temperature of the heat conduction plate 21, that is, the temperature of the substrate W. The temperature adjustment unit 33 sets the target temperature of the substrate W. The target temperature of the substrate W is a temperature sufficiently higher than the temperature of the substrate W when the vacuum chamber 16 is carried. The temperature of the substrate W when carried into the vacuum chamber 16 is, for example, 23 ° C at room temperature, and the target temperature of the substrate W is, for example, 50 ° C. Moreover, the temperature adjustment unit 33 sets the target temperature of the substrate W to a temperature at which only the electric resistance heater 22 supplies heat and stops supply. That is, the temperature adjustment unit 33 sets the target temperature of the substrate W to a high temperature that does not require a mechanism for separately cooling the substrate W. When the vapor deposition material is discharged from the vapor deposition source 11, the temperature adjustment unit 33 controls the current supplied to the electric resistance heater 22 based on the detected temperature of the temperature sensor 23 (that is, the temperature of the substrate W), so that the temperature of the substrate W becomes Target temperature.

The temperature adjustment unit 33 includes a central processing unit and a memory, and is not limited to all of the software processing temperature adjustment processing. For example, the temperature adjustment unit 33 may include a dedicated hardware (application-specific integrated circuit: ASIC), and perform at least a part of processing in various processes. In other words, the temperature adjustment unit 33 is configured to include one or more processors (microcomputers) that operate with one or more dedicated hardware circuits such as an ASIC, a computer program (software), or a combination of these.

The drive source 15 is connected to the drive processing unit 32. The drive processing unit 32 performs drive processing of the transmission mechanism 20 by the output of the drive source 15. The drive processing unit 32 includes a central processing unit and a memory, and is not limited to the drive processing of the drive source 15 or the transmission unit 20 by the software. For example, the drive processing unit 32 may include a dedicated hardware (application-specific integrated circuit: ASIC), and perform at least a part of processing in various processes. In other words, the temperature adjustment unit 33 is configured to include one or more processors (microcomputers) that operate with one or more dedicated hardware circuits such as an ASIC, a computer program (software), or a combination of these.

The transmission mechanism 20 receives the power of the drive source 15 and moves the substrate holder 13 in the horizontal direction. The transmission mechanism 20 receives the power of the drive source 15 and rotates the cover base 14, the substrate holder 13, and the heat conduction plate 21 in the circumferential direction of the substrate W. The drive processing unit 32 is switched between the independent movement of the substrate holder 13 and the independent movement of the cover base 14 and the movement of the substrate holder 13 and the cover base 14 and the heat transfer plate 21 integrally.

The transmission mechanism 20 receives the power of the drive source 15 and raises and lowers the cover base 14, the substrate holder 13, and the heat transfer plate 21. The drive processing unit 32 switches between the independent lifting and lowering of the substrate holder 13 , the independent lifting and lowering of the cover base 14 , and the lifting and lowering of the substrate holder 13 and the cover base 14 and the heat transfer plate 21 .

The substrate holder 13 is independently moved in the horizontal direction, or the substrate holder 13 is independently rotated to, for example, an integration of the substrate position and the cover position. The independent rotation of the cover base 14 is used to configure the vapor deposition cover M at a specific position. The substrate holder 13 is independently lifted and lowered, for example, by loading and unloading the substrate W, or by arranging the substrate W at a specific position for vapor deposition. The independent raising and lowering of the cover base 14 is, for example, the loading and unloading of the vapor deposition cover M or the placement of the vapor deposition cover M at a specific position for vapor deposition.

The second figure shows the planar structure of the substrate W facing the plane view of the back surface WR of the substrate W of the vapor deposition device. In the second drawing, for convenience of explanation, the shape of the substrate W is a disk shape, and the regions captured by the three vapor deposition cameras 12 are superimposed on the three substrate marks Wm and the vapor deposition cover M provided in the substrate W. The three cover symbols Mm are shown.

As shown in the second figure, the substrate W is disposed in the arrangement area WA, and the vapor deposition cover M is disposed in the arrangement area MA. The position of the cover symbol Mm is set to be located outside the outline E of the substrate W. The cover symbol Mm has a rectangular shape in a plane view angle facing the back surface WR of the substrate W, but may have a shape different from the rectangular shape, for example, a cross shape or the like.

The area captured by each of the vapor deposition cameras 12 is the imaging range 2Z, and is arranged almost equidistantly in the circumferential direction of the arrangement area WA. The optical axis 2A of each vapor deposition camera 12 is disposed at the center of each imaging range 2Z. The position and size of the three photographing ranges 2Z are set in accordance with the conveyance accuracy of the substrate W such that the boundary between the flat portion Wp1 and the slope portion Wp2 is included in the photographing range 2Z, and each mask mark Mm is included in each photographing range 2Z. .

The third diagram is an example of an image taken by the vapor deposition camera 12.
As shown in the third figure, the image includes the image IMW of the substrate W and the background image IMB of the substrate W. Among the image IMW of the substrate W, the portion where the luminance is relatively high is the image of the flat portion Wp1, that is, the first image IM1. On the other hand, among the images of the substrate W, the portion where the luminance is relatively low is the image of the slope portion Wp2, that is, the second image IM2. The luminance of the background image of the substrate W is lower than that of the first image IM1 and higher than the luminance of the second image IM2.

Here, the outline E of the substrate W is an outline line connected to a point at which the substrate W is located at the outermost side, and is also an outline of the inclined surface portion Wp2. This slope portion Wp2 is usually constituted by a curved surface having a specific curvature. The curved surface of the inclined surface portion Wp2 faces the contour E of the substrate W, the luminance of the image IMW of the substrate W gradually decreases, and the boundary between the second image IM2 and the background image IMB becomes unclear. Then, when the contour E of the substrate W is detected from the boundary between the second image IM2 and the background image IMB, the positional accuracy thereof causes a large error. In particular, in the detection of the accuracy of several micrometers at the position of the substrate W, the degree of unclearness of the above-described boundary becomes a very large error.

On the other hand, the boundary between the slope portion Wp2 and the flat portion Wp1 is a boundary that changes in the plane direction of the substrate W, for example, from the direction of the surface facing the flat portion Wp1, and there is a clearly detected boundary. Therefore, if the boundary between the first image IM1 and the second image IM2 is determined as a part of the outer shape of the substrate W, the position detection of the substrate W using the outer shape can improve the detection accuracy.

The image processing unit 31 performs edge detection based on the comparison of the images captured by the vapor deposition camera 12, and extracts the boundary between the first image IM1 and the second image IM2. Then, the image processing unit 31 determines the boundary between the extracted boundary, that is, the boundary between the flat portion Wp1 and the slope portion Wp2 as a part of the outer shape of the substrate W. Further, the image processing unit 31 memorizes the relative positions of the plurality of vapor deposition cameras 12 in a unique coordinate system (for example, an XYθ coordinate system), and the position of the optical axis 2A of the vapor deposition camera 12 or the position of the imaging range 2Z of the vapor deposition camera 12 is This coordinate system is used to decide. The image processing unit 31 calculates the boundary between the first image IM1 and the second image IM2 by this coordinate system, thereby determining a part of the outer shape of the substrate W.

[effect]
The vapor deposition device performs a specific process of the substrate position and a specific process of the cover position before vapor deposition of the substrate W. In the specific processing of the substrate position and the specific processing of the mask position, the vapor deposition device irradiates light onto the back surface WR of the substrate W placed on the substrate holder 13 . Then, the vapor deposition device captures an image of the second image IM2 including the first image IM1 formed by the light reflected by the flat portion Wp1 and the light reflected by the inclined surface portion Wp2 by the vapor deposition camera 12. Next, the image processing unit 31 acquires an image captured by the vapor deposition camera 12.

The image processing unit 31 extracts the boundary between the flat portion Wp1 and the slope portion Wp2 based on the image comparison using the image captured by the vapor deposition camera 12. Then, the image processing unit 31 calculates the substrate position and passes the virtual circles around the substrate position through the respective boundaries. Moreover, the image processing unit 31 extracts the cover symbol Mm using the image captured by the vapor deposition camera 12. Then, the image processing unit 31 calculates the cover position and passes the imaginary circle centering on the cover position through the respective cover symbols Mm. The vapor deposition device then drives the communication mechanism 20 to move the substrate holder 13 or the cover base 14 so that the substrate position coincides with the cover position.

Further, the substrate W or the vapor deposition cover M may be rotated every time a specific treatment of the substrate position or a specific treatment of the cover position is performed by one vapor deposition camera. In particular, the position of the substrate mark Wm is different for each of the substrates W, and the substrate W in which the substrate marks Wm cannot be imaged is present in a manner in which the respective substrates W are fixed at a common specific position. In this case, the substrate W can be rotated with respect to the vapor deposition camera 12 each time a substrate mark Wm is taken. In a mode in which the substrate W is rotated to capture a plurality of substrate marks Wm, the relative position between the substrate marks Wm can be grasped by the rotation angle of the substrate W. Further, the rotation angle of the substrate W can be detected by a detecting portion that detects a rotation angle, and for example, an encoder can be used in the detecting portion.

As shown in the fourth figure, in the vapor deposition apparatus, when the substrate W is vapor-deposited, first, the communication mechanism 20 is driven in a state where the substrate position and the cover position are aligned, and the substrate position and the cover position are integrated. The back surface WR of the substrate W is in contact with the heat conduction plate 21. Further, the vapor deposition device sets the target temperature of the substrate W so that only the heat of the electric resistance heater 22 is supplied to the temperature reached by the stop. That is, the vapor deposition device sets the target temperature of the substrate W to a high temperature that does not require another mechanism for cooling the substrate W. When the vapor deposition device discharges the vapor deposition material from the vapor deposition source 11, the current supplied to the electric resistance heater 22 is controlled based on the detected temperature of the temperature sensor 23 (that is, the temperature of the substrate W), and the temperature of the substrate W is made a target. temperature.

Next, the vapor deposition device integrally rotates the cover base 14 and the substrate holder 13 together with the heat conduction plate 21 in the circumferential direction of the substrate W, and sublimates the vapor deposition material from the vapor deposition source 11. Then, the vapor deposition device maintains the state in which the substrate position and the cover position are integrated, and rotates the substrate W adjusted to the target temperature together with the vapor deposition cover M to deposit the vapor deposition material on the surface WF of the substrate W.

As described above, according to the above embodiment, the effects listed below are obtained.
(1) A temperature higher than the temperature at the time of loading into the vacuum chamber 16 is set as the target temperature of the adjustment target (for example, the substrate W). Then, the current supplied to the resistance heater 22 is controlled in accordance with the temperature of the substrate W (for example, the detected temperature of the temperature sensor 23) so that the temperature of the substrate W reaches the target temperature. Therefore, since the target temperature is close to room temperature, it is not necessary to particularly cool the substrate W, and only the heat supplied from the electric resistance heater 22 can cause the temperature of the substrate W to reach the target temperature. As a result, compared with the temperature adjustment using the tempering water, it is not necessary to additionally use a structure for cooling the substrate W, and the difference between the temperature of the substrate W and the target temperature can be lowered.

(2) The vapor deposition material is discharged from the vapor deposition source 11, and the substrate W and the vapor deposition cover M are rotated in the circumferential direction of the substrate. Therefore, the uniformity of the vapor deposition material on the substrate W can be improved. Then, in a state where the uniformity of the vapor deposition material is improved, the difference between the temperature of the substrate W and the target temperature can be reduced, so that the shape uniformity of the vapor deposition material adhering to the substrate W can be improved.

(3) Since the heat transfer plate 21 is in contact with the surface of the back surface WR of the substrate W, the heat of the electric resistance heater 22 is transmitted to the substrate W, so that the followability of the temperature of the substrate W to the temperature of the electric resistance heater 22 can be improved.

(4) The deviation of the relative position of the substrate W and the heat conduction plate 21 due to vibration is suppressed. As a result, in the structure in which the substrate W, the vapor deposition cover M, and the heat conduction plate 21 are integrally rotated, the positional accuracy with respect to the substrate W of the heat conduction plate 21 is improved, so that the temperature adjustment accuracy of the substrate W can be improved.

(5) The first image IM1 of the light reflected from the flat portion Wp1 and the boundary between the flat portion and the inclined surface of the second image IM2 of the light reflected by the inclined surface portion Wp2 are detected, and the position of the substrate W is detected, so that the position can be improved. The accuracy of the position of the substrate W is detected. As a result, not only the accuracy of the position of the substrate W but also the accuracy of the position of the substrate W with respect to the electric resistance heater 22 is improved, so that the adjustment accuracy of the temperature of the substrate W can also be improved.

(6) In particular, since the position of the substrate W is detected using the boundary between the flat portion Wp1 and the slope portion Wp2, the substrate W having no substrate mark Wm can be used as the detection target. Further, even when the substrate W does not have sufficient transparency or is opaque, and the position of the detection substrate W is obtained from the imaging of the surface having no substrate mark Wm, the substrate W can be detected with high accuracy. position.

Further, the above embodiment can be implemented as appropriate by the following modifications.
[temperature check]
The temperature sensor 23 is not limited to a configuration for detecting the temperature of the heat conduction plate 21, and may be a sensor that directly detects the temperature of the adjustment target. In a sensor like this, a radiation thermometer can be used. Further, when a radiation thermometer is used as the temperature sensor 23, the radiation thermometer may be disposed in the vapor deposition device to detect heat energy radiated from the adjustment target. Further, the vapor deposition device may include two or more radiation thermometers. When the radiation thermometer is used as the temperature sensor 23, the temperature adjustment portion 33 may not hold the data for correlating the temperature of the heat conduction plate 21 with the temperature of the adjustment target.

[Adjustment object]
In the vapor deposition device, the temperature adjustment target that is changed by the temperature adjustment unit 33 may be used as the vapor deposition cover M. Further, the vapor deposition device may adjust the temperature changed by the temperature adjustment unit 33 as both the substrate W and the vapor deposition cover M.

・When the vapor deposition material is deposited on the substrate W, the substrate W may be brought into surface contact with the vapor deposition cover M by magnetic force. At this time, in order to adjust the temperature to the vapor deposition cover M, the temperature of the vapor deposition cover M is adjusted by the contact between the vapor deposition cover M and the substrate W. Then, since the vapor deposition cover M is in surface contact with the surface WF of the substrate W, the accuracy of the shape of the deposit by the vapor deposition material can be improved in accordance with the shape of the vapor deposition cover M.

[resistance heater]
In addition to the heat conduction plate 21, the vapor deposition device may house a resistance heater in the substrate holder 13 or the cover base 14. Further, the vapor deposition apparatus may be provided with a new electric resistance heater in the substrate holder 13 or the cover base 14 without using the electric resistance heater 22.

[holding institution]
The holding mechanism may be configured such that the substrate W is moved in parallel with respect to the vapor deposition source 11 when the vapor deposition material is deposited on the substrate W. Alternatively, the substrate W may be made to stand still with respect to the vapor deposition source 11 when the vapor deposition material is deposited on the substrate W. In addition, in order to integrally rotate the substrate W, the vapor deposition cover M, and the heat conduction plate 21, the uniformity of the vapor deposition material deposited on the surface of the substrate W can be improved, and the temperature variation between the rotations of the substrate W can be suppressed. . As a result, an effect in accordance with the above (2) is obtained.

The vapor deposition device may not have the connection portion 19, and the vacuum chamber 16 directly supports the support frame 18. Alternatively, the vacuum chamber 16 can also be used as a structure that directly supports the holding mechanism.

The lower structure supporting the support frame 18 may be used as a cavity other than the vacuum chamber 16, or may be another structure provided in an environment in which the vacuum chamber 16 is provided.

[Substrate position]
The image processing unit 31 detects the position of the substrate W only from the boundary position between the extracted flat portion Wp1 and the inclined surface portion Wp2. By changing this, the image processing unit 31 can detect the position of the substrate W using the boundary between the extracted flat portion Wp1 and the slope portion Wp2 and other information for detecting the position of the substrate W. The other information for detecting the position of the substrate W is the position of a feature point such as a groove provided in the substrate W, the rotation angle of the substrate W, and the like.
The image processing unit 31 uses a boundary defining the position of the substrate W, and may be one of the outer peripheral portions of the substrate W, or may be two or more.

For example, the shape of the boundary between the flat portion Wp1 and the inclined surface portion Wp2 is microscopically processed in the respective inclined surface portions Wp2, that is, in the case where the respective substrates W are different, and the respective substrates W have an intrinsic shape. In the structure for detecting the position of the substrate W from the boundary of one of the outer peripheral portions, first, the shape of the boundary between the flat portion Wp1 and the inclined surface portion Wp2 of the entire substrate W is collected in advance as a full-circumferential shape. Then, the shape of the boundary between the flat portion Wp1 and the inclined surface portion Wp2 extracted at one portion of the outer peripheral portion is detected by detecting which portion of the entire circumference shape.

The substrate position detected by the image processing unit 31 may be a feature point other than the center calculated from the center of the substrate W, the contour E of the substrate W, the center of the substrate W, or the contour E, or any combination thereof.

The number of the vapor deposition cameras 12 included in the vapor deposition device may be one or two or four or more. When the number of the vapor deposition cameras 12 is one or two, as described above, the position of the substrate W is detected using the photographing result of the vapor deposition camera 12 and other information.

The back surface WR of the substrate W may include the substrate symbol Wm. In this case, the vapor deposition camera 12 captures the substrate symbol Wm located on the back surface WR, and the image processing unit 31 applies image processing to the imaging result of the vapor deposition camera 12, whereby the vapor deposition apparatus can calculate the substrate position.

2A‧‧‧ optical axis

2Z‧‧‧Photography range

8F‧‧‧Jig hook

8H‧‧‧ photography hole

11‧‧‧vapor deposition source

12‧‧‧Decanting camera

13‧‧‧Substrate fixture

14‧‧‧ Cover base

15‧‧‧Driver

16‧‧‧vacuum tank

17‧‧‧Exhaust system

18‧‧‧Support box

19‧‧‧Connecting Department

20‧‧‧Communication agency

21‧‧‧heat transfer board

22‧‧‧Resistance heater

23‧‧‧ Temperature Sensor

31‧‧‧Image Processing Department

32‧‧‧Drive Processing Department

33‧‧‧ Temperature Adjustment Department

E‧‧‧ contour

IMW‧‧‧ like

IM1‧‧‧ first image

IM2‧‧‧ second image

IMB‧‧‧ background image

M‧‧·vapor coating cover

MA, WA‧‧‧ configuration area

Mm‧‧‧ hood mark

W‧‧‧Substrate

WF‧‧‧ surface

WR‧‧‧back

Wm‧‧‧ substrate mark

Wp1‧‧‧ Flat Department

Wp2‧‧‧ oblique face

[First Diagram] A configuration diagram showing the structure of a vapor deposition device.

[Second diagram] A plan view showing the imaging range of the vapor deposition camera.

[Third Diagram] A diagram showing an example of an image captured by a vapor deposition camera.

[Fourth Diagram] A diagram showing the action of the vapor deposition device.

Claims (6)

An evaporation device having: The evaporation source is located in the vacuum tank; a holding mechanism that holds the substrate while the substrate surface faces the vapor deposition source, and holds a vapor deposition cover between the vapor deposition source and the substrate; In the electric resistance heater, at least one of the substrate and the vapor deposition cover is used as a temperature adjustment target, and is in thermal contact with the temperature adjustment target to adjust a temperature of the adjustment target; The temperature adjustment unit controls the current supplied to the electric resistance heater according to the temperature of the adjustment target; The temperature higher than the temperature of the adjustment target when the vacuum chamber is carried in is the target temperature of the adjustment target; The temperature adjustment unit sets the target temperature when the vapor deposition material is discharged from the vapor deposition source to a temperature at which the electric resistance of the electric resistance heater is stopped by the electric resistance of the electric resistance heater. The vapor deposition device according to claim 1, wherein the holding means holds the electric resistance heater, and when the vapor deposition material is discharged from the vapor deposition source, the substrate, the vapor deposition cover, and the electric resistance heater are Together, they rotate in the circumferential direction of the aforementioned substrate. The vapor deposition device according to claim 1 or 2, wherein the object to be adjusted is the substrate; The foregoing electric resistance heater is embedded in a heat conducting plate that can be in contact with the back surface of the substrate; The holding means holds the heat conduction plate, and when the vapor deposition material is discharged from the vapor deposition source, the substrate and the vapor deposition cover are rotated together with the heat conduction plate in the circumferential direction of the substrate. The vapor deposition device according to claim 3, wherein the holding means releases the vapor deposition material from the vapor deposition source while the surface of the substrate is in contact with the vapor deposition cover surface. The substrate and the vapor deposition cover rotate together with the heat conduction plate in the circumferential direction of the substrate. The vapor deposition device according to claim 1 or 2, comprising: The upper structure is connected to the aforementioned holding mechanism; a lower structure supporting the aforementioned upper structure; a connecting portion is sandwiched between the upper structure and the lower structure, and connects the upper structure and the lower structure; The connection portion includes an anti-vibration function and suppresses vibration transmitted from the lower structure to the upper structure. The vapor deposition device according to claim 1 or 2, wherein the object to be adjusted is the substrate; The vapor deposition device described above has: a photographing unit that images the vapor deposition cover and the back surface of the substrate facing the back surface of the substrate; The positioning unit integrates the position of the vapor deposition cover and the position of the substrate according to the result of the imaging by the imaging unit; The positioning unit extracts a boundary between the flat portion and the inclined surface of the first image of the light reflected by the flat portion of the substrate and the second image of the light reflected by the slope portion of the flat portion. As a part of the outer shape of the substrate, a part of the extracted outer shape is used to detect the position of the substrate.