JP2006336037A - Vapor phase deposition system, and vapor phase deposition method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vapor phase deposition system and a vapor phase deposition method capable of preventing the non-uniformity of quality in a deposition film surface by preventing pattern deviation caused by the distortion, expansion/contraction or the like of a mask when patterning and depositing a raw film by the vapor phase deposition method by using the mask. <P>SOLUTION: The vapor phase deposition system comprises: a vapor deposition chamber which is evacuated by an evacuation means by depositing at least one layer of a raw film on a substrate by a vapor phase deposition method; a substrate arrangement means of the substrate; a raw material evaporation means to evaporate a raw material; and a mask arrangement means of a mask to regulate the deposition area of a deposition film with respect to the substrate. The vapor phase deposition system is capable of controlling the temperature of the mask to the temperature history of the substrate by a temperature control mechanism at least while depositing the raw material film on the substrate. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a vapor phase deposition apparatus and a vapor phase deposition method for obtaining a film by evaporating a raw material in a vacuum and depositing it on a substrate. More specifically, the present invention relates to a vapor deposition apparatus and a vapor deposition method using a mask restrictor that restricts a region where a deposited film is formed on a substrate.

  Conventionally, as a method for depositing a raw material film on a base material, a vacuum (vacuum) vapor deposition method, a sputtering method, a chemical vapor deposition method (CVD), an MBE (molecular beam epitaxy) method, a MOCVD (metal organic chemical vapor deposition) method or the like is used. Phase deposition methods are widely known. Technologies using these vapor deposition methods include, for example, a tungsten film forming technology used in semiconductor devices, a silicon-based light emitting material used in the field of optical interconnection that communicates with light, and a liquid crystal display device. Thin film semiconductors adapted for thin film transistors for liquid crystal displays used as switching elements, light emitting elements, light receiving elements, piezoelectric elements, transparent conductive electrodes, zinc oxide crystal films used for active elements, active matrix liquid crystal displays, VLSI, etc., The phosphor layer of a radiation image conversion panel can be mentioned and used in a wide range of fields.

  When forming a thin film by vapor deposition, the thin film is formed with a large area, like the phosphor layer of a radiation image conversion panel, and it is patterned with high definition like an active matrix liquid crystal display. In some cases, a thin film is formed.

  When a patterned thin film is formed by a vapor deposition method, there are various techniques for controlling a region in which a raw material film is deposited only at a necessary position on a substrate, and a desired opening called a mask has been provided. This is done using members. Using a mask as a means for forming a thin film only where it is needed is a very effective method, but when depositing a raw material film on a substrate, a deviation of the deposition pattern occurs, which adversely affects quality. It is known. Thus, in order to avoid the influence on the quality due to the deviation of the deposition pattern and the like, measures have been taken so far. For example, a method is known in which tension is applied to the mask to improve the adhesion of the mask to the substrate (see, for example, Patent Document 1). In the technique described in Patent Document 1, since the tension is applied to the mask and the adhesion of the mask to the base material is improved, the mask holding device is complicated and handling is complicated. In addition, a technique for preventing mask distortion, expansion and contraction, etc. by controlling the temperature of the mask is known (see, for example, Patent Document 2). With the technique described in Patent Document 2, it is possible to prevent mask distortion, expansion and contraction, etc., and to prevent mask pattern displacement, but as another problem, even if temperature control of only the mask is performed, the substrate temperature Therefore, a difference in quality occurs between the vicinity of the mask and the center of the thin film surface, which is insufficient for avoiding the problem of uneven quality in the deposited film surface.

Under these circumstances, when depositing a raw material film by patterning using a mask by a vapor deposition method, pattern displacement is prevented, and the deposited film in-plane quality non-uniformity is prevented, and a vapor deposition method. Development is desired.
JP 2004-3030 A JP 2001-323364 A

  The present invention has been made in view of the above situation, and its purpose is to prevent pattern misalignment when depositing a raw material film by vapor phase deposition using a mask, and non-uniform quality in the deposited film surface. It is an object of the present invention to provide a vapor deposition apparatus and a vapor deposition method that prevent the above.

  The above object of the present invention has been achieved by the following constitution.

(Claim 1)
Depositing at least one layer of a raw material film on a base material by a vapor deposition method, a deposition chamber depressurized by a decompression means, a base material placement means for the base material, a raw material evaporation means for evaporating the raw material, and a base material In contrast, a vapor deposition apparatus having a mask arrangement means for a mask that regulates a formation region of a deposited film,
At least during the deposition of the source film on the substrate, the temperature of the mask can be controlled in accordance with the temperature history of the substrate by a temperature control mechanism.

(Claim 2)
The temperature control mechanism includes a temperature control unit for a medium that can be heated and cooled, a circulation unit that circulates the medium to the substrate arrangement unit and the mask arrangement unit, and a circulation amount control unit for the circulation amount of the medium. The vapor deposition apparatus according to claim 1, wherein

(Claim 3)
The vapor phase deposition apparatus according to claim 1, wherein the mask is disposed in contact with a base material.

(Claim 4)
The vapor phase deposition apparatus according to claim 1, wherein the mask is disposed in a non-contact state with the base material.

(Claim 5)
The vapor phase deposition apparatus according to claim 1, wherein the mask is made of the same material as the base material.

(Claim 6)
The vapor phase deposition apparatus according to any one of claims 1 to 5, wherein the vapor phase deposition apparatus uses a vapor deposition apparatus to deposit at least one raw material film on a substrate. A vapor deposition method characterized by the above.

  Provided are a vapor deposition apparatus and a vapor deposition method that prevent pattern misalignment and prevent in-plane quality non-uniformity when a source film is patterned and deposited by a vapor deposition method using a mask. This makes it possible to produce products with stable deposited film surface quality, and to improve production efficiency.

  Embodiments according to the present invention will be described with reference to FIGS. 1 to 5, but the present invention is not limited thereto.

  FIG. 1 is a schematic view of a vapor deposition apparatus having a vapor deposition chamber, a substrate placement means, a mask placement means, and a raw material evaporation means. FIG. 1A is a schematic view of a vapor deposition apparatus having a vapor deposition chamber, temperature control means for substrate placement means and mask placement means, and raw material evaporation means. FIG. 1B is a schematic block diagram showing the relationship between each part and means constituting the vapor deposition apparatus shown in FIG.

  In the figure, reference numeral 1a denotes a vapor deposition apparatus. The vapor deposition apparatus 1 a includes a vapor deposition chamber 101, a base material placement unit 102, a mask placement unit 103, a temperature control mechanism 104 a, a raw material evaporation unit 105, and a control unit 2.

Reference numeral 101a denotes an exhaust port provided in the vapor deposition chamber 101, which is connected to an exhaust means (not shown) that is a decompression means, and is configured to have a set degree of vacuum through the main valve 101b. . The degree of vacuum in the vapor deposition chamber 101 can be appropriately set as necessary. Reference numeral 101c denotes a vacuum measuring meter which is a measuring means for measuring the vacuum degree of the vapor deposition chamber 101. There is no limitation in particular as a vacuum measuring meter, For example, an ionization vacuum gauge and a Pirani vacuum gauge are mentioned. Reference numeral 101d denotes an inert gas inlet, and an inert gas such as N ₂ , Ar, Ne, or He is introduced as an atmospheric gas through a gas introduction valve 101e as necessary.

  The base material arranging means 102 has a base material arranging member 102a and a temperature measuring means 102b, and the temperature can be controlled by the temperature control mechanism 104a. A plurality of the substrates 3 arranged on the substrate arrangement member 102a may be arranged, and can be arranged at any position on the substrate arrangement member 102a. The substrate placement member 102a is not particularly limited as long as the planarity of the substrate can be maintained and placed, and examples thereof include stainless steel and aluminum.

  The temperature measuring means 102 b measures the temperature of the base material 3 placed on the base material placement member 102 a and feeds back the result to the control means 2. By controlling the temperature control mechanism 104a that circulates the heat medium to the base material arranging member 102a according to the fed back information, the temperature of the base material can be kept constant while the raw material is deposited on the base material. It has become. The temperature measuring unit 102b is not particularly limited, and examples thereof include a thermocouple and a temperature sensor.

  Reference numeral 102d denotes a rotating means for rotating the base material arranging member 102a. The rotating means is not particularly limited, and may be, for example, a rotary motor or a belt via a pulley. This figure shows the case of a rotary motor. Further, the base material arranging member 102a may be rotated or fixed. This figure has shown the case where it rotates.

  The mask arrangement means 103 has a mask arrangement member 103a, and the temperature can be controlled by the temperature control mechanism 104a. Reference numeral 4 denotes a mask arranged on the mask arrangement member 103a. The mask placement member 103a is not particularly limited as long as the mask planarity can be maintained and placed, and examples thereof include stainless steel, aluminum, and copper. The mask arrangement member 103a is attached to the base material arrangement member 102a. This figure has shown the case where the mask 4 and the base material 3 are closely_contact | adhering.

  A shielding plate (not shown) of raw material deposition control means for controlling the deposition of the raw material on the base material 3 may be disposed below the mask placement means 103. The shielding plate (not shown) may be of any type, but preferably has a type that can completely prevent vapor deposition of the substrate 3 by being completely closed.

  The temperature control mechanism 104a includes a temperature control unit (not shown) for a medium that can be heated and cooled, and a medium that can be heated and cooled, and a mask arrangement for the substrate arrangement member 102a of the substrate arrangement unit 102 and the mask arrangement unit 103. Circulation means (not shown) for circulation to the member 103a and circulation amount control means (not shown) for the circulation amount of the medium are provided. The medium controlled to a predetermined temperature is circulated to the substrate arrangement member 102a and the mask arrangement member 103a by the temperature control mechanism 104a, thereby arranging the substrate 3 on the substrate arrangement member 102a and the mask arrangement member 103a. It is possible to set the mask 4 to a predetermined temperature.

  In the method of circulating the medium to the substrate arrangement member 102a and the mask arrangement member 103a by the temperature control mechanism 104a, the same medium may be circulated to the substrate arrangement member 102a and the mask arrangement member 103a or individually circulated. May be. This figure shows a case where the same medium is circulated to the base material arranging member 102a and the mask arranging member 103a. Since the medium controlled to the same predetermined temperature is circulated to the base material placement member 102a and the mask placement member 103a, the temperature history of the mask 4 can be controlled in the same manner as the temperature history of the base material 3.

  Examples of the medium include synthetic organic heat medium oil. Examples of the medium temperature control means include a combination of a heater and a chiller. Examples of the circulation amount control means include a combination of a flow meter and a pump.

  Reference numeral 105 denotes a raw material evaporation means provided in the lower part of the vapor deposition chamber 101. The raw material evaporation means 105 has a raw material container 105a having heating means (not shown) and a current supply unit 105d for heating the raw material container 105a. The heating means for the raw material container 105a is not particularly limited, and examples thereof include a sputtering method and a resistance heating method. This figure shows the resistance heating method. In order to obtain a stable deposited film surface, it is preferable to dispose a controllable movable lid (attached) to the opening of the raw material container 105a until the temperature of the raw material 105b reaches a set temperature. The raw material evaporation means 105 is provided with a measuring means 105c such as a thermocouple or a temperature sensor for measuring the temperature of the raw material 105b in the raw material container 105a, and feeds back the result of the measuring means 105c to the control means 2. It is preferable to perform control on the set temperature input in advance to the control means 2 so as to maintain the set temperature. This figure shows a case where the temperature of the raw material container 105a is controlled. A combination of these controls and control of a movable lid (illustrated) can also be performed to open the lid when the set temperature is reached.

  The relationship between each part and each means constituting the vapor deposition apparatus 1a will be described with reference to a schematic block diagram shown in FIG. Information on the temperature of the base material 3 held by the base material arrangement member 102a measured by the base material temperature measurement means 102b is input to the CPU of the control means 2. The information input to the control means 2 performs a calculation process with a preset temperature previously input to the memory, and a temperature control mechanism that circulates the heat medium adjusted to a predetermined temperature through the base material arranging member 102a and the mask arranging member 103a. 104a can be controlled to control the circulation amount of the medium and the temperature of the medium. By this control, the temperature of the base material 3 and the mask 4 can be set to the same temperature with the same temperature history. The result of the temperature of the raw material 105b in the raw material container 105a measured by the measuring means 105c is fed back to the control means 2, and the arithmetic processing is performed for the set temperature input in advance to the control means 2, and the result is arranged in the raw material container 105a. By adjusting the current of the current supply unit 105d of the heating means (not shown), the temperature of the raw material 105b can be controlled to be constant. It is of course possible to feed back the temperature results of these raw materials 105b to the temperature control mechanism 104a and use them to determine the heating start timing of the substrate 3 and the mask 4.

  FIG. 2 is a schematic view of another vapor deposition apparatus having a vapor deposition chamber, a base material arranging means, a mask arranging means, and a raw material evaporation means. FIG. 2A is a schematic diagram of a vapor deposition apparatus having a vapor deposition chamber, a temperature control means for a substrate placement means, a temperature control means for a mask placement means, and a raw material evaporation means. FIG. 2B is a schematic block diagram showing the relationship between each part and each means constituting the vapor deposition apparatus shown in FIG.

  In the figure, 1b represents a vapor deposition apparatus. Reference numeral 104a 'denotes a temperature control mechanism for controlling the temperature of the substrate arrangement member 102a, and 103c denotes a temperature control mechanism for controlling the temperature of the mask arrangement member 103a. The vapor deposition apparatus shown in FIG. 1 is different from the vapor deposition apparatus shown in FIG. 1 in that the vapor deposition apparatus shown in FIG. 1 is different from the system in which the temperature control of the substrate placement member 102a and the mask placement member 103a is performed together. The apparatus is a system in which the temperature control of the substrate arrangement member 102a and the mask arrangement member 103a is performed independently. Reference numeral 103b denotes a temperature measuring means for the mask arrangement member 103a. The temperature measuring unit 103b is not particularly limited, and is preferably the same as the temperature measuring unit 102b. Other symbols are the same as those in FIG.

  The base material arranging means 102 has a base material arranging member 102a and a temperature measuring means 102b, and the temperature can be controlled by the temperature control mechanism 104a ′. The temperature control mechanism 104 a ′ includes a temperature control unit (not shown) for a medium that can be heated and cooled, and a medium that can be heated and cooled, and a mask for the substrate arrangement member 102 a of the substrate arrangement unit 102 and the mask arrangement unit 103. Circulation means (not shown) for circulation to the arrangement member 103a and circulation amount control means (not shown) for the circulation amount of the medium are provided. The temperature control mechanism 104a 'circulates the medium controlled to a predetermined temperature to the base material arranging member 102a, and thereby the base material 3 arranged on the base material arranging member 102a can be set to the predetermined temperature. It has become.

  The temperature measuring means 102 b measures the temperature of the base material 3 placed on the base material placement member 102 a and feeds back the result to the control means 2. By controlling the temperature control mechanism 104a ′ according to the fed back information, it is possible to keep the temperature of the substrate constant while depositing the raw material on the substrate.

  The mask arrangement unit 103 includes a mask arrangement member 103a and a temperature measurement unit 103b. The mask placement member 103a can circulate the medium controlled to a predetermined temperature from the temperature control mechanism 103c. This figure has shown the case where the mask 4 and the base material 3 are closely_contact | adhering.

  The temperature measuring means 103b measures the temperature of the mask 4 arranged on the mask arrangement member 103a and feeds back the result to the control means 2. According to the fed back information, the temperature control mechanism 103c that circulates the medium controlled to a predetermined temperature in the mask arrangement member 103a is controlled, and the temperature of the medium and the circulation amount of the medium are controlled. During deposition, the temperature of the mask 4 can be controlled in accordance with the temperature history of the substrate 3.

  The relationship between each part and each means constituting the vapor deposition apparatus 1b will be described with reference to a schematic block diagram shown in FIG. Information on the temperature of the base material 3 held by the base material arrangement member 102a measured by the base material temperature measurement means 102b is input to the CPU of the control means 2. The information input to the control means 2 performs a calculation process with the preset temperature input in advance in the memory, and a temperature control mechanism that circulates the heat medium adjusted to a predetermined temperature, which is arranged in the base material arrangement member 102a. 104a 'can be controlled to control the circulation amount of the medium and the temperature of the medium.

  Information on the temperature of the mask 4 held by the mask arrangement member 103a measured by the mask temperature measuring means 103b is input to the CPU of the control means 2. The information input to the control means 2 performs a calculation process with a preset temperature previously input to the memory, and a temperature control mechanism 103c disposed in the mask arrangement member 103a for circulating the medium adjusted to a predetermined temperature. It is possible to control and control the circulation amount of the heat medium and the temperature of the heat medium. At this time, the circulation amount of the medium and the temperature of the medium by the temperature control mechanism 103 c are a system in which the temperature of the mask 4 is controlled in accordance with the temperature history of the substrate 3. The result of the temperature of the raw material 105b in the raw material container 105a measured by the measuring means 105c is fed back to the control means 2, and the arithmetic processing is performed for the set temperature input in advance to the control means 2, and the result is arranged in the raw material container 105a. By adjusting the current of the current supply unit 104d of the heating means (not shown), the temperature of the raw material 105b can be controlled to be constant. The result of the temperature of the raw material 105b is fed back to the temperature control mechanism 104a ′ of the base material 3 and the temperature control mechanism 103c of the mask 4, and used to determine the timing of starting the heating of the base material 3 and the mask 4. Of course it is possible.

  As shown in FIG. 1 and FIG. 2, when a mask is used on a substrate while controlling the temperature of the substrate to be kept constant, and at least one source film is deposited by vapor deposition, The following effects can be obtained by controlling the mask temperature in accordance with the temperature adjustment history of the material.

  When adjusting the temperature of the mask to the temperature of the base material, it becomes possible to reduce the fluctuation of the difference from the temperature of the base material, so the difference between the base material temperature and the vicinity of the mask and the center of the deposited film surface It is possible to suppress the quality difference and eliminate the non-uniform quality in the deposited film surface, and obtain a stable deposited film surface.

  FIG. 3 is a schematic view of the vapor phase deposition apparatus shown in FIG. 1 when the substrate and the mask are arranged in a non-contact manner.

  In the figure, 1c represents a vapor deposition apparatus. X represents a gap between the mask 4 and the base material 3 disposed on the base material arranging member 102a. The gap X is preferably 1/3 to 2 times the deposition thickness in consideration of formation of a deposited film in a non-deposition region. Other reference numerals are the same as those in FIG. The temperature control method for the substrate 3 and the mask 4 is also the same as the temperature control method shown in FIG.

  FIG. 4 is a schematic view of the vapor deposition apparatus shown in FIG. 2 in which the substrate and the mask are arranged in a non-contact manner.

  In the figure, reference numeral 1d denotes a vapor deposition apparatus. Other symbols are the same as those in FIG. The temperature control method for the substrate 3 and the mask 4 is also the same as the temperature control method shown in FIG.

As shown in FIGS. 3 and 4, by arranging the mask with a gap from the base material, the following effects can be further obtained with respect to the method in which the mask shown in FIGS. 1 and 2 is in close contact with the base material.
1) It is possible to prevent damage such as defects in the vicinity of the mask of the deposited film itself and a reduction in film thickness, and it is possible to obtain a higher quality deposited film surface.

  FIG. 5 is a schematic history curve showing the relationship between the temperature control history of the substrate and the temperature control of the mask temperature control.

  In the figure, A is a hysteresis curve when the temperature of the substrate is changed from 50 ° C to 100 ° C. In this case, the temperature of the substrate is controlled to increase stepwise. B is a history curve when the temperature of the mask is adjusted to 50 ° C to 100 ° C by performing the same control as the temperature history curve of the substrate in order to match the temperature of the substrate. C is a hysteresis curve when the temperature is changed from 50 ° C. to 100 ° C. in order to adjust the temperature of the mask to the temperature of the substrate, so that the control represented by a curve expressed by a quadratic function different from the temperature control of the substrate is performed. is there. In the present invention, controlling the temperature of the mask in accordance with the temperature history of the substrate means controlling according to the relationship between A and B shown in the figure.

  The material used for the mask shown in FIGS. 1 to 4 is preferably the same material as the base material. The material used for the evaporation source according to the present invention is not particularly limited. For example, a tungsten film forming technique used in semiconductor devices, a silicon-based light emitting material used in the field of optical interconnection that performs optical communication, Applicable to thin film transistor for liquid crystal display used as switching element in liquid crystal display device, light emitting element, light receiving element, piezoelectric element, transparent conductive electrode, zinc oxide crystal film used for active element, active matrix liquid crystal display, super LSI, etc. Examples include evaporation sources used for thin film semiconductors, phosphor layers of radiation image conversion panels, and the like.

  Hereinafter, although an example is given and the concrete effect of the present invention is shown, the mode of the present invention is not limited to these.

Example 1
(Preparation of base material)
The substrate used was a 2 mm thick aluminum plate having a size of 300 mm × 300 mm.

(Evaporation raw material)
Cesium bromide was used as a raw material.

(Preparation of mask)
Using aluminum having a thickness of 2 mm as a material, a mask with an opening of 250 mm × 250 mm was prepared so as to mask the periphery of the substrate by 50 mm.
(Formation of deposited film)
When the vapor phase deposition apparatus shown in FIG. 1 is used and the temperature control of the substrate and the temperature control of the mask at the time of forming the deposited film are matched with the history curve of the temperature control of the substrate as shown in FIG. , Without conforming to the history curve, a deposited film was formed, and sample No. 101-104. Note that the deposited film was formed under the same conditions except that the temperature control of the base material and the mask was not performed in the vapor deposition apparatus shown in FIG. 105. The deposited film was formed under the same conditions except that the temperature control of the base material and the mask was not performed in the vapor deposition apparatus shown in FIG. 106.

As the conditions for forming the deposited film, a rectangular parallelepiped container made of molybdenum was used as a raw material container, and the heating was a resistance heating method. The raw material container was filled with 800 g of the prepared cesium bromide.
The inside of the vapor deposition chamber of the vapor phase deposition apparatus was adjusted to 0.1 Pa using a vacuum pump, and the vapor deposition on the base material was carried out by energizing heating while controlling the temperature inside the raw material container at 800 ° C. The evaporation of the raw material was terminated when the film thickness of the raw material reached 300 μm. The temperature of the substrate during the formation of the deposited film was controlled to be 100 ° C. In the case of the vapor deposition apparatus shown in FIG. 3, the gap between the mask and the substrate was 200 μm.

Evaluation The obtained sample No. Table 1 shows the results obtained by measuring the film density in 101 to 106 in the deposition region and the stability of the mask boundary edge of the deposition film by the following method and evaluating the film according to the following evaluation rank.

Method for Measuring Film Density in Deposition Area In the deposition film formation area, the film density at the center and the edge was cut into 1 cm square from the sample, the mass was measured, and the index value was calculated according to the following calculation formula.

Absolute value (MC-ME) / MC
In the formula, MC represents the film density at the center, and ME represents the film density at the end.

Evaluation rank ◎: Less than 0.01 ○: 0.01 or more, less than 0.05 Δ: 0.05 or more, less than 0.1 ×: 0.1 or more, less than 0.15 XX: 0.15 or more Deposited film Method for evaluating the stability of the end of the sample Using an optical microscope, observation was performed visually at a magnification of 100 times.

Evaluation rank ○: There are no defects or dents at the end. △: Slight defects or dents are confirmed at the end that do not cause any practical problems. ×: Defects or dents that affect performance are confirmed at the end. Be done

  The effectiveness of the present invention was confirmed.

Example 2
Sample No. 1 of Example 1 No. 103 was prepared by forming a deposited film under the same conditions except that the gap between the base material and the mask was changed as shown in Table 2, and a sample was prepared. 201-205.

Evaluation The obtained sample No. The same items as in Example 1 were evaluated for 101 to 106 by the same method, and the results of evaluation according to the same evaluation rank are shown in Table 2.

  Sample No. In 205, the gap between the mask and the base material becomes wide, so that the vapor wraps around the gap between the mask and the base material, and a deposited film is formed even at a place where it is not necessary, so that the function as a mask can be achieved. I confirmed that it disappeared. The effectiveness of the present invention was confirmed.

Example 3
Sample No. 1 of Example 1 No. 103 was prepared by forming a deposited film under the same conditions except that the material used for the mask was changed as shown in Table 3, and a sample was prepared. 301 to 305.

Evaluation The obtained sample No. The same items as in Example 1 were evaluated for 301 to 303 by the same method, and the results of evaluation according to the same evaluation rank are shown in Table 3.

  The effectiveness of the present invention was confirmed.

It is a schematic diagram of the vapor deposition apparatus which has a vapor deposition chamber, a base-material arrangement | positioning means, a mask arrangement | positioning means, and a raw material evaporation means. It is a schematic diagram of the other vapor deposition apparatus which has a vapor deposition chamber, a base-material arrangement | positioning means, a mask arrangement | positioning means, and a raw material evaporation means. FIG. 2 is a schematic view of the vapor deposition apparatus when the substrate and the mask are arranged in a non-contact manner in the vapor deposition apparatus shown in FIG. 1. FIG. 3 is a schematic diagram of a vapor deposition apparatus when a substrate and a mask are arranged in a non-contact manner in the vapor deposition apparatus shown in FIG. 2. 5 is a schematic history curve showing the relationship between the temperature control history of the substrate and the temperature control of the mask temperature control.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1a-1d Vapor deposition apparatus 101 Vapor deposition chamber 101a Exhaust port 101c Vacuum measuring meter 101d Inert gas introduction port 102 Base material arrangement means 102a Base material arrangement member 102b, 103b Temperature measurement means 102c Current supply part 102d Rotation means 103a Mask arrangement Member 104a, 104a ', 103c Temperature control mechanism 105 Raw material evaporation means 105a Raw material container 105b Raw material 105c Measuring means 2 Control means 3 Base material 4 Mask X Gap

Claims (6)

Depositing at least one layer of a raw material film on a base material by a vapor deposition method, a deposition chamber depressurized by a decompression means, a base material placement means for the base material, a raw material evaporation means for evaporating the raw material, and a base material In contrast, a vapor deposition apparatus having a mask arrangement means for a mask that regulates a formation region of a deposited film,
At least during the deposition of the source film on the substrate, the temperature of the mask can be controlled in accordance with the temperature history of the substrate by a temperature control mechanism. The temperature control mechanism includes a temperature control unit for a medium that can be heated and cooled, a circulation unit that circulates the medium to the substrate arrangement unit and the mask arrangement unit, and a circulation amount control unit for the circulation amount of the medium. The vapor deposition apparatus according to claim 1, wherein The vapor phase deposition apparatus according to claim 1, wherein the mask is disposed in contact with a base material. The vapor phase deposition apparatus according to claim 1, wherein the mask is disposed in a non-contact state with the base material. The vapor phase deposition apparatus according to claim 1, wherein the mask is made of the same material as the base material. The vapor phase deposition apparatus according to any one of claims 1 to 5, wherein the vapor phase deposition apparatus uses a vapor deposition apparatus to deposit at least one raw material film on a substrate. A vapor deposition method characterized by the above.

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