JP2010196082A - Vacuum vapor deposition apparatus - Google Patents

Vacuum vapor deposition apparatus Download PDF

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JP2010196082A
JP2010196082A JP2009038813A JP2009038813A JP2010196082A JP 2010196082 A JP2010196082 A JP 2010196082A JP 2009038813 A JP2009038813 A JP 2009038813A JP 2009038813 A JP2009038813 A JP 2009038813A JP 2010196082 A JP2010196082 A JP 2010196082A
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film thickness
vapor deposition
substrate
thickness sensor
control
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Naoto Fukuda
直人 福田
Shingo Nakano
真吾 中野
Yoshiyuki Nakagawa
善之 中川
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Canon Inc
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Canon Inc
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Abstract

<P>PROBLEM TO BE SOLVED: To carry out the highly precise control of film thickness by correcting measured data using a film thickness sensor for control. <P>SOLUTION: A vapor deposition source 10 for producing the vapor of a vapor deposition material to be deposited on a substrate 31, the film thickness sensor 20 for control which uses a crystal oscillator to control the temperature of the vapor deposition source 10 by monitoring the vapor of the vapor deposition material and a film thickness sensor 40 for correction which uses a crystal oscillator are provided. The precision of the film thickness control is improved by correcting the measured date by the film thickness sensor 20 for control based on the correction value obtained by the film thickness sensor 40 for correction which measures the vapor deposition rate discontinuously. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、有機ＥＬ素子を製造するための真空蒸着装置に関するものである。   The present invention relates to a vacuum evaporation apparatus for manufacturing an organic EL element.

有機ＥＬ素子は、一般的に透明導電膜（例えばインジウム錫酸化物）からなる陽極と金属（例えばＡｌ）からなる陰極との間に、有機薄膜層として正孔輸送層、発光層、電子輸送層等を形成する。陽極側から注入された正孔と、陰極側から注入された電子が、それぞれ正孔輸送層、電子輸送層を介して発光層で再結合することにより、発光を得る電子デバイスである。   An organic EL element generally has a hole transport layer, a light emitting layer, and an electron transport layer as an organic thin film layer between an anode made of a transparent conductive film (for example, indium tin oxide) and a cathode made of a metal (for example, Al). Etc. The electronic device obtains light emission by recombining holes injected from the anode side and electrons injected from the cathode side in the light emitting layer through the hole transport layer and the electron transport layer, respectively.

この有機ＥＬ素子の製造方法の一つとして、真空蒸着法が知られている。有機ＥＬ材料をルツボに入れ、真空装置内で蒸着材料の気化温度以上にルツボ等を加熱することで、蒸着材料の蒸気を発生させ、有機ＥＬ素子の基体となる基板に堆積して有機薄膜層を形成する。   As one method for producing the organic EL element, a vacuum vapor deposition method is known. Organic EL material is put in a crucible, and the vapor of the vapor deposition material is generated by heating the crucible or the like above the vaporization temperature of the vapor deposition material in a vacuum device, and deposited on the substrate that is the base of the organic EL element, and the organic thin film layer Form.

この有機ＥＬ素子の製造工程において、水晶振動子を用いた膜厚モニターにより蒸着レートをモニターし、有機ＥＬ材料の蒸発量を制御する方法が知られている。蒸着レートをモニターしなければ、成膜中の基板への付着量が不明となり、基板上での膜厚を目標とする値に合わせることが不可能となる。   In the manufacturing process of the organic EL element, a method is known in which the evaporation rate is monitored by a film thickness monitor using a crystal resonator to control the evaporation amount of the organic EL material. If the deposition rate is not monitored, the amount of adhesion to the substrate during film formation becomes unknown, and it becomes impossible to match the film thickness on the substrate to the target value.

しかし、水晶振動子への有機ＥＬ材料の付着量が増すに従って、膜厚モニターの示す蒸着レート指示値と、基板上での付着量に差異が生じてくる。これは、水晶振動子に付着する有機ＥＬ材料の膜厚の増加に伴い、水晶振動子の周波数が変化することに起因する。この現象は、膜厚の目標値範囲が特に狭い場合に問題となる。通常、有機ＥＬ素子の一層当たりの膜厚は、数十〜１００［ｎｍ］程度であることから、蒸着レート指示値と基板上での付着量の差は製造歩留り低下の要因となる。   However, as the adhesion amount of the organic EL material to the crystal resonator increases, a difference occurs between the deposition rate instruction value indicated by the film thickness monitor and the adhesion amount on the substrate. This is due to the fact that the frequency of the crystal resonator changes as the film thickness of the organic EL material attached to the crystal resonator increases. This phenomenon becomes a problem when the target value range of the film thickness is particularly narrow. Usually, since the film thickness per layer of the organic EL element is about several tens to 100 [nm], the difference between the deposition rate instruction value and the adhesion amount on the substrate causes the production yield to decrease.

このような問題を解決するため、特許文献１には、膜厚制御用の水晶モニターと膜厚補正用の光学モニターとを備えた蒸着装置が開示されている。この蒸着装置は、光学モニターで目標膜厚近くまで制御し、その後、光学モニターの値で水晶モニターの値を補正してから水晶モニターにより目標膜厚となるまで精度良く膜厚を制御する。   In order to solve such a problem, Patent Document 1 discloses a vapor deposition apparatus including a crystal monitor for film thickness control and an optical monitor for film thickness correction. This vapor deposition apparatus controls the film thickness close to the target film thickness with the optical monitor, and then corrects the value of the crystal monitor with the value of the optical monitor and then accurately controls the film thickness until the target film thickness is reached with the crystal monitor.

特開２００３−３５５２０号公報JP 2003-35520 A

ところが、特許文献１に記載されているように、光学モニターは水晶振動子に比べて膜厚の分解能が低く、有機ＥＬ素子の１層あたりの膜厚が数十〜１００［ｎｍ］程度の薄膜は、光学モニターで正確に計測するのは難しい。つまり、光学モニターで計測中は、膜厚レート指示値と基板上への付着量との差異を小さくすることは難しく、有機ＥＬ素子の製造には適していない。   However, as described in Patent Document 1, the optical monitor has a lower film thickness resolution than a crystal resonator, and a thin film having a thickness of several tens to 100 [nm] per layer of organic EL elements. Is difficult to measure accurately with an optical monitor. That is, during the measurement with the optical monitor, it is difficult to reduce the difference between the film thickness rate instruction value and the amount of adhesion on the substrate, which is not suitable for manufacturing an organic EL element.

本発明は、蒸着レートを正確に計測し、高精度の膜厚制御を行うことを可能とする真空蒸着装置を提供することを目的とするものである。   An object of the present invention is to provide a vacuum deposition apparatus that can accurately measure a deposition rate and perform highly accurate film thickness control.

本発明の真空蒸着装置は、基板を保持する保持機構と、前記基板に成膜するための蒸着材料の蒸気を発生させる蒸着源と、前記基板に成膜中に蒸着材料の蒸着レートを計測し、前記蒸着源の温度制御を行うための制御用膜厚センサーと、前記制御用膜厚センサーによる計測データに基づいて前記蒸着源の温度制御を行う制御系と、蒸着材料の蒸着レートを計測し、前記制御用膜厚センサーによる計測データを補正するための補正値を前記制御系に出力する補正用膜厚センサーと、を有することを特徴とする。   The vacuum vapor deposition apparatus of the present invention includes a holding mechanism that holds a substrate, a vapor deposition source that generates vapor of a vapor deposition material for forming a film on the substrate, and a vapor deposition rate of the vapor deposition material during film formation on the substrate. A film thickness sensor for controlling the temperature of the vapor deposition source, a control system for controlling the temperature of the vapor deposition source based on measurement data from the film thickness sensor for control, and measuring a vapor deposition rate of the vapor deposition material. And a correction film thickness sensor that outputs a correction value for correcting measurement data obtained by the control film thickness sensor to the control system.

基板に成膜する蒸着材料の蒸着レートを制御するための制御用膜厚センサーの計測データを、補正用膜厚センサーによって不連続的に計測された蒸着材料の蒸着レートにより補正する。逐次補正される制御用膜厚センサーの計測データによって蒸着源を制御することで、基板に成膜される薄膜の膜厚を高精度で管理し、有機ＥＬ素子の製造歩留まりを向上させることができる。   The measurement data of the control film thickness sensor for controlling the vapor deposition rate of the vapor deposition material deposited on the substrate is corrected by the vapor deposition rate of the vapor deposition material measured discontinuously by the correction film thickness sensor. By controlling the deposition source according to the measurement data of the control film thickness sensor that is sequentially corrected, the film thickness of the thin film formed on the substrate can be managed with high accuracy, and the production yield of the organic EL element can be improved. .

実施例１による真空蒸着装置を示す模式図である。1 is a schematic diagram showing a vacuum vapor deposition apparatus according to Example 1. FIG. 実施例２による真空蒸着装置を示す模式図である。6 is a schematic diagram showing a vacuum evaporation apparatus according to Example 2. FIG. 実施例１の一変形例を示す模式図である。FIG. 6 is a schematic diagram illustrating a modified example of the first embodiment. 実施例１の別の変形例を示す模式図である。FIG. 10 is a schematic diagram illustrating another modification of the first embodiment. 実施例１の別の変形例を示す模式図である。FIG. 10 is a schematic diagram illustrating another modification of the first embodiment. 一従来例による真空蒸着装置を示す模式図である。It is a schematic diagram which shows the vacuum evaporation system by one prior art example. 実施例１において計測された膜厚及び補正値を示すグラフである。3 is a graph showing a film thickness and a correction value measured in Example 1. 実施例２に用いたＡｌｑ３の補正値を示すグラフである。6 is a graph showing correction values for Alq3 used in Example 2. 実施例２に用いたＣｏｕｍａｒｉｎ６の補正値を示すグラフである。6 is a graph showing correction values for Coumarin 6 used in Example 2. 実施例２において得られた、Ａｌｑ３＋Ｃｏｕｍａｒｉｎ６の膜厚を示すグラフである。6 is a graph showing the film thickness of Alq3 + Coumarin6 obtained in Example 2. 図６の従来例において得られた膜厚を示すグラフである。It is a graph which shows the film thickness obtained in the prior art example of FIG.

本発明を実施するための最良の形態を、図面に基づいて説明する。   The best mode for carrying out the present invention will be described with reference to the drawings.

図１に示すように、蒸着源１０は、蒸着材料１１を収容するルツボ１２と、ルツボ１２を加熱するためのヒーター１３と、蓋１４と、リフレクター１５と、を備えている。蒸着材料１１は、ルツボ１２内で加熱され、蓋１４の開口部から蒸気が放出される。蒸着源１０から発生する蒸気は、保持機構３０に保持された成膜用の基板３１の成膜面上にマスク３２を介して付着し、薄膜を形成する。   As shown in FIG. 1, the vapor deposition source 10 includes a crucible 12 that accommodates the vapor deposition material 11, a heater 13 for heating the crucible 12, a lid 14, and a reflector 15. The vapor deposition material 11 is heated in the crucible 12, and vapor is released from the opening of the lid 14. The vapor generated from the vapor deposition source 10 adheres to the film formation surface of the film formation substrate 31 held by the holding mechanism 30 via the mask 32 to form a thin film.

蒸着源１０から発生する蒸気が基板３１に堆積する速度（蒸着レート）は、水晶振動子を備えた制御用膜厚センサー２０によって計測される。制御用膜厚センサー２０は、その計測データを、蒸着源１０を温度制御し、蒸発量を制御する制御系に出力する。この制御用膜厚センサー２０とは別に、制御用膜厚センサー２０の計測データを補正する補正値を出力するための、水晶振動子を備えた補正用膜厚センサー４０が設けられている。補正用膜厚センサー４０は、蒸着源１０から発生する蒸気を遮断するためのシャッター４１を備え、制御用膜厚センサー２０への補正値を出力するために、蒸着源１０から発生する蒸気を不連続的にモニターする。制御用膜厚センサー２０には、必要に応じてパイプや遮蔽板などを設けてもよい。補正用膜厚センサー４０は、基板３１の近傍に設けられていることが望ましいが、これに限定されるものではない。尚、補正値は下記のような式で算出される。   The rate at which vapor generated from the vapor deposition source 10 accumulates on the substrate 31 (vapor deposition rate) is measured by the control film thickness sensor 20 provided with a crystal resonator. The control film thickness sensor 20 outputs the measurement data to a control system that controls the temperature of the vapor deposition source 10 and controls the evaporation amount. In addition to the control film thickness sensor 20, a correction film thickness sensor 40 having a crystal resonator for outputting a correction value for correcting the measurement data of the control film thickness sensor 20 is provided. The correction film thickness sensor 40 includes a shutter 41 for blocking the vapor generated from the vapor deposition source 10, and in order to output a correction value to the control film thickness sensor 20, the vapor generated from the vapor deposition source 10 is not detected. Monitor continuously. The control film thickness sensor 20 may be provided with a pipe, a shielding plate, or the like as necessary. The correction film thickness sensor 40 is preferably provided in the vicinity of the substrate 31, but is not limited thereto. The correction value is calculated by the following formula.

再補正値 ＝ 補正値 × t1 ／ t2 ・・・（式１）
t1：補正用膜厚センサー４０の指示値
t2：制御用膜厚センサー２０の指示値 Re-correction value = correction value x t1 / t2 (Equation 1)
t1: Indicated value of the correction film thickness sensor 40
t2: indicated value of the control film thickness sensor 20

ここで、それぞれ同一の膜厚センサ−で複数回成膜を行う場合、前回の成膜で用いた再補正値が補正値となり、その補正値を制御用膜厚センサー２０および補正用膜厚センサー４０の計測データを用いて補正した値が再補正値となる。ただし、膜厚センサーの初回使用時においては、補正値は任意の値となり、再補正値は制御用膜厚センサ−の計測データを用いた補正値となる。   Here, when a plurality of film formations are performed with the same film thickness sensor, the re-correction value used in the previous film formation becomes a correction value, and the correction value is used as the control film thickness sensor 20 and the correction film thickness sensor. The value corrected using the 40 measurement data becomes the re-correction value. However, when the film thickness sensor is used for the first time, the correction value is an arbitrary value, and the re-correction value is a correction value using measurement data of the control film thickness sensor.

基板３１及びマスク３２は、チャンバー５０内に保持機構３０にて保持されており、必要であれば、保持機構３０に回転機構を設けてもよい。また、基板３１及びマスク３２は、保持機構３０によりチャンバー内にどのように配置されていてもよい。蒸着源１０の蓋１４に設けられた開口部と、基板３１の成膜面との間には、図示しないシャッターが個別に設けられていてもよい。蓋１４に設けられた開口部にシャッターが設けられていれば、開口部から発生する蒸気を自由に遮断することが可能となる。   The substrate 31 and the mask 32 are held by the holding mechanism 30 in the chamber 50. If necessary, the holding mechanism 30 may be provided with a rotation mechanism. Further, the substrate 31 and the mask 32 may be arranged in the chamber by the holding mechanism 30 in any way. A shutter (not shown) may be individually provided between the opening provided in the lid 14 of the vapor deposition source 10 and the film formation surface of the substrate 31. If a shutter is provided in the opening provided in the lid 14, it is possible to block off the steam generated from the opening.

チャンバー５０は、図示しないアライメント機構を備えていて、マスク３２に高精細マスクを用いて、マスク蒸着による微細パターン形成を行ってもよい。チャンバー５０内を排気するための図示しない真空排気系は、迅速に高真空領域まで排気できる能力を持った真空ポンプを用いることが望ましい。   The chamber 50 may include an alignment mechanism (not shown), and may use a high-definition mask as the mask 32 to form a fine pattern by mask vapor deposition. As a vacuum exhaust system (not shown) for exhausting the inside of the chamber 50, it is desirable to use a vacuum pump having a capability of exhausting quickly to a high vacuum region.

この真空蒸着装置を有機ＥＬ素子の製造に用いる場合は、ゲートバルブ５１により他の真空装置と接続し、有機ＥＬ素子を作製するための様々な工程を行えばよい。有機ＥＬ素子の製造装置には、様々な工程を行うチャンバーが複数備えてあることが望ましく、チャンバー５０はそれらの一部であることが望ましい。   When this vacuum vapor deposition apparatus is used for manufacturing an organic EL element, the gate valve 51 may be connected to another vacuum apparatus to perform various processes for manufacturing the organic EL element. The organic EL element manufacturing apparatus preferably includes a plurality of chambers for performing various processes, and the chamber 50 is preferably a part of them.

基板３１が大型基板である場合は、複数の蒸着源１０を用いて、基板３１の成膜面に対して膜厚むらの少ない均一な蒸着膜形成を行うことが望ましい。   In the case where the substrate 31 is a large substrate, it is desirable to use the plurality of vapor deposition sources 10 to form a uniform vapor deposition film with little film thickness unevenness on the film formation surface of the substrate 31.

蒸着源１０の蓋１４に設けられた開口部の開口面積、開口形状、材質等は個別に異なっていてもよく、開口形状は、円形、矩形、楕円形など、どのような形状でもよい。開口面積及び開口形状がそれぞれ異なることにより、基板３１上での膜厚制御性がより向上する場合がある。また同じ理由で、ルツボ１２の形状、材質等は個別に異なっていてもよい。   The opening area, the opening shape, the material, and the like of the opening provided in the lid 14 of the vapor deposition source 10 may be individually different, and the opening shape may be any shape such as a circle, a rectangle, or an ellipse. When the opening area and the opening shape are different, the film thickness controllability on the substrate 31 may be further improved. For the same reason, the shape, material, etc. of the crucible 12 may be individually different.

マスク３２に高精細マスクを用いて、マスク蒸着による微細パターン形成を行う場合は、マスクへの熱影響を考慮して、蒸着源１０を移動させながら成膜を行ってもよい。また、基板３１及びマスク３２を移動させながら成膜を行ってもよい。   When a fine pattern is formed by mask vapor deposition using a high-definition mask as the mask 32, film formation may be performed while moving the vapor deposition source 10 in consideration of the thermal effect on the mask. Further, film formation may be performed while moving the substrate 31 and the mask 32.

図２は、別の実施形態による真空蒸着装置を示す。これは、複数の蒸着源１０ａ、１０ｂと、各蒸着源１０ａ、１０ｂから発生する蒸気の蒸着レートをそれぞれ検出して膜厚制御を行うための制御用膜厚センサー２０ａ、２０ｂ及び補正用膜厚センサー４０ａ、４０ｂを備える。   FIG. 2 shows a vacuum deposition apparatus according to another embodiment. This is a control film thickness sensor 20a, 20b and a correction film thickness for detecting a plurality of vapor deposition sources 10a, 10b, and vapor deposition rates of vapors generated from the respective vapor deposition sources 10a, 10b, respectively. Sensors 40a and 40b are provided.

このように、複数の蒸着源を用いて、同じ蒸着材料の蒸気を発生させてもよいし、それぞれ異なる蒸着材料を用いた共蒸着膜を成膜してもよい。   As described above, vapors of the same vapor deposition material may be generated using a plurality of vapor deposition sources, or co-deposition films using different vapor deposition materials may be formed.

図１は実施例１による真空蒸着装置を示す。蒸着源１０のルツボには、蒸着材料１１として有機ＥＬ材料であるトリス（８−ヒドロキシキノリナト）アルミニウム（Ａｌｑ３）を１０．０［ｇ］充填し、ルツボ１２に蓋１４を取り付けた。ルツボ１１に充填されたＡｌｑ３は、蓋１４の開口部を介して蒸発する。ルツボ１２と蓋１４の接合部はフランジ形状として、蒸発したＡｌｑ３の開口部以外からの漏れを防止した。蒸着源１０は、基板３１の成膜面に対向して配置されている。制御用膜厚センサー２０は、基板３１に向かう蒸着源１０から発生した蒸気を遮ることのない位置に配置した。蓋１４の開口部から、基板３１の成膜面までの距離は３００［ｍｍ］とした。蓋１４の開口部から、制御用膜厚センサー２０までの距離は２００［ｍｍ］とした。   FIG. 1 shows a vacuum deposition apparatus according to the first embodiment. The crucible of the vapor deposition source 10 was filled with 10.0 [g] of tris (8-hydroxyquinolinato) aluminum (Alq3), which is an organic EL material, as the vapor deposition material 11, and the lid 14 was attached to the crucible 12. Alq 3 filled in the crucible 11 evaporates through the opening of the lid 14. The joint between the crucible 12 and the lid 14 has a flange shape to prevent leakage from other than the opening of the evaporated Alq3. The vapor deposition source 10 is disposed to face the film formation surface of the substrate 31. The control film thickness sensor 20 was disposed at a position where the vapor generated from the vapor deposition source 10 toward the substrate 31 was not blocked. The distance from the opening of the lid 14 to the film formation surface of the substrate 31 was set to 300 [mm]. The distance from the opening of the lid 14 to the control film thickness sensor 20 was 200 [mm].

基板３１として、１００［ｍｍ］×１００［ｍｍ］×０．７［ｍｍ］のガラス基板を、ゲートバルブ５１を介してチャンバー５０と接合された図示しない基板ストック装置に１１枚セットした。基板ストック装置内を図示しない真空排気系により１．０×１０−４［Ｐａ］以下まで排気した。チャンバー５０内も、図示しない真空排気系により１．０×１０−４［Ｐａ］以下まで排気し、排気した後にヒーター１３でルツボ１２を２００［℃］まで加熱した。ヒーターパワーはルツボ１２の底面付近の温度に基づいて制御した。まず、ルツボ１２の底面付近の温度を２００［℃］のまま３０［ｍｉｎ］保持してＡｌｑ３の脱ガスを行った。 As the substrate 31, 11 glass substrates of 100 [mm] × 100 [mm] × 0.7 [mm] were set in a substrate stock apparatus (not shown) joined to the chamber 50 through the gate valve 51. The inside of the substrate stock apparatus was evacuated to 1.0 × 10 −4 [Pa] or less by a vacuum exhaust system (not shown). The inside of the chamber 50 was also evacuated to 1.0 × 10 −4 [Pa] or less by a vacuum exhaust system (not shown), and after evacuation, the crucible 12 was heated to 200 [° C.] with the heater 13. The heater power was controlled based on the temperature near the bottom of the crucible 12. First, Alq3 was degassed while maintaining the temperature near the bottom of the crucible 12 at 200 [° C.] for 30 [min].

次に、制御用膜厚センサー２０において蒸着レートが１．０［ｎｍ／ｓｅｃ］となる温度までルツボ１２を加熱した。制御用膜厚センサー２０において、蒸着レートが１．０［ｎｍ／ｓｅｃ］となったところで、基板ストック装置から基板搬送機構を用いて、チャンバー５０へ基板を１枚搬入して成膜を行った。基板３１の中心部分で膜厚が１００［ｎｍ］となるように成膜して、成膜を終えた基板３１を直ちに搬出して、次の基板３１を搬入するというプロセスで、１１枚の基板３１に上記の条件で成膜を行った。基板３１への成膜は、制御用膜厚センサー２０の水晶振動子の周波数が０．０１５［ＭＨｚ］低下する毎に行った。また、各基板３１への成膜前に、補正用膜厚センサー４０の近傍に設けられたシャッター４１を開き、補正用膜厚センサー４０によって計測された蒸着レートに基づく補正値を求めて、制御用膜厚センサー２０の計測データ（蒸着レート）を補正した。   Next, the crucible 12 was heated to a temperature at which the deposition rate in the control film thickness sensor 20 was 1.0 [nm / sec]. In the film thickness sensor 20 for control, when the vapor deposition rate reached 1.0 [nm / sec], a single substrate was carried into the chamber 50 from the substrate stock apparatus using the substrate transport mechanism to form a film. . In the process of depositing the film at the central portion of the substrate 31 so that the film thickness becomes 100 [nm], the substrate 31 that has been deposited is immediately unloaded, and the next substrate 31 is loaded. No. 31 was formed under the above conditions. Film formation on the substrate 31 was performed each time the frequency of the crystal resonator of the control film thickness sensor 20 decreased by 0.015 [MHz]. Further, before film formation on each substrate 31, the shutter 41 provided in the vicinity of the correction film thickness sensor 40 is opened, and a correction value based on the deposition rate measured by the correction film thickness sensor 40 is obtained and controlled. The measurement data (deposition rate) of the film thickness sensor 20 for use was corrected.

上記の方法で成膜を行い、基板３１の中央部付近の膜厚を触針式段差計により測定した。その結果と、補正用膜厚センサー４０による補正値を図７に示す。図７から判るように、目標膜厚１００［ｎｍ］に対して、測定膜厚は±２．０［％］の範囲におさまっている。このことから、Ａｌｑ３を目標膜厚に対して精度良く成膜できていたことが判った。   Film formation was performed by the above method, and the film thickness near the center of the substrate 31 was measured with a stylus type step gauge. The result and the correction value by the correction film thickness sensor 40 are shown in FIG. As can be seen from FIG. 7, the measured film thickness falls within the range of ± 2.0 [%] with respect to the target film thickness of 100 [nm]. From this, it was found that Alq3 was formed with high accuracy with respect to the target film thickness.

本実施例においては、蒸着源１０として図１に示す構成を用いたが、これに限定されるものではない。蒸着源１０の数についても、これに限定されるものではない。また、各膜厚センサーの位置等もこれに限定されるものではない。   In the present embodiment, the configuration shown in FIG. 1 is used as the vapor deposition source 10, but it is not limited to this. The number of vapor deposition sources 10 is not limited to this. Further, the position of each film thickness sensor is not limited to this.

基板３１に大判のものを用いる場合には、保持機構３０を回転させて、基板３１の成膜面内でむらのない膜厚分布を得ればよい。高精細マスクを用いる場合は、アライメントステージを用いてマスク蒸着による微細パターン形成を行ってもよい。この際、高精細マスクへの熱影響が問題となるようであれば、蒸着源１０においてリフレクター１５を多く用いればよいし、必要であればリフレクター１５に冷却パイプや空冷パイプを設けてもよい。   When a large-sized substrate 31 is used, the holding mechanism 30 may be rotated to obtain a uniform film thickness distribution within the film formation surface of the substrate 31. When a high-definition mask is used, a fine pattern may be formed by mask vapor deposition using an alignment stage. At this time, if the thermal influence on the high-definition mask becomes a problem, a large number of reflectors 15 may be used in the vapor deposition source 10, and a cooling pipe or an air cooling pipe may be provided in the reflector 15 if necessary.

なお、図３に示すように、蒸着源１０を図示しない蒸着源搬送機構により搬送させて、基板３１に蒸着膜の形成を行ってもよい。また、図４に示すように、基板３１とマスク３２を図示しない蒸着源搬送機構により搬送させて、成膜を行ってもよい。また、図５に示すように、基板３１とマスク３２が、チャンバー５０の設置面に対して垂直、もしくは垂直に近い角度になるように保持機構３０で保持し、蒸着膜の形成を行ってもよい。   In addition, as shown in FIG. 3, the vapor deposition source 10 may be conveyed by the vapor deposition source conveyance mechanism which is not shown in figure, and a vapor deposition film may be formed in the board | substrate 31. FIG. Moreover, as shown in FIG. 4, the substrate 31 and the mask 32 may be transported by a vapor deposition source transport mechanism (not shown) to perform film formation. In addition, as shown in FIG. 5, even if the substrate 31 and the mask 32 are held by the holding mechanism 30 so that the substrate 31 and the mask 32 are at an angle perpendicular to the installation surface of the chamber 50 or close to the perpendicular, Good.

本実施例の効果を検証するために、図６に示す従来構成の真空蒸着装置で成膜した場合の比較実験を行った。チャンバー１５０内の基板１３１及びマスク１３２からなる被成膜物に向かって、ルツボ１１２、ヒーター１１３等からなる蒸着源１１０からＡｌｑ３の蒸気を発生させ、蓋１１４に設けた開口部を介して蒸着させた。成膜中、制御用膜厚センサー１２０による蒸着レートが１．０［ｎｍ／ｓｅｃ］となる温度までルツボ１１２を加熱し、蒸着レートが１．０［ｎｍ／ｓｅｃ］で保持されるように制御した。   In order to verify the effect of this example, a comparative experiment was performed in the case where the film was formed by the vacuum deposition apparatus having the conventional configuration shown in FIG. A vapor of Alq3 is generated from a vapor deposition source 110 composed of a crucible 112, a heater 113, and the like toward a film formation target composed of a substrate 131 and a mask 132 in the chamber 150, and vapor-deposited through an opening provided in the lid 114. It was. During film formation, the crucible 112 is heated to a temperature at which the deposition rate by the control film thickness sensor 120 is 1.0 [nm / sec], and the deposition rate is controlled at 1.0 [nm / sec]. did.

成膜後、基板１３１の中央部付近の膜厚をαステップにより測定した。その結果を図１１に示す。図１１から判るように、目標膜厚１００［ｎｍ］に対して、測定膜厚は±４．８［％］となった。これは、制御用膜厚センサー１２０に付着するＡｌｑ３の量と、基板上への付着量との差異が時間経過と共に変化しているためであり、水晶振動子の周波数低下に伴う現象である。   After film formation, the film thickness near the center of the substrate 131 was measured by an α step. The result is shown in FIG. As can be seen from FIG. 11, the measured film thickness was ± 4.8 [%] with respect to the target film thickness of 100 [nm]. This is because the difference between the amount of Alq3 adhering to the control film thickness sensor 120 and the amount adhering on the substrate changes with the passage of time, and this is a phenomenon accompanying a decrease in the frequency of the crystal resonator.

これにより、従来構成の真空蒸着装置よりも、本実施例の真空蒸着装置が優れていると判った。   Thereby, it turned out that the vacuum vapor deposition apparatus of a present Example is superior to the vacuum vapor deposition apparatus of a conventional structure.

図２は実施例２による真空蒸着装置を示す。蒸着源１０ａのルツボ１２ａに、蒸着材料１１ａとして有機ＥＬ材料であるＡｌｑ３を１０．０［ｇ］充填し、ルツボ１２ａに蓋１４ａを取り付け、蒸着源１０ａにセットした。ルツボ１２ａに充填されたＡｌｑ３は、蓋１４ａの開口部を介して蒸発する。ルツボ１２ａと蓋１４ａの接合部はフランジ形状として、蒸発したＡｌｑ３の開口部以外からの漏れを防止した。蒸着源１０ｂのルツボ１２ｂには、蒸着材料１１ｂとして有機ＥＬ材料である３−（２−ベンゾチアゾリル）−７−（ジエチルアミノ）クマリン（Ｃｏｕｍａｒｉｎ６）を１０．０［ｇ］充填し、ルツボ１２ｂに蓋１４ｂを取り付け、蒸着源１０ｂにセットした。ルツボ１２ｂに充填されたＣｏｕｍａｒｉｎ６は、蓋１４ｂの開口部を介して蒸発する。ルツボ１２ｂと蓋１４ｂの接合部はフランジ形状として、Ｃｏｕｍａｒｉｎ６の開口部以外からの漏れを防止した。   FIG. 2 shows a vacuum deposition apparatus according to the second embodiment. The crucible 12a of the vapor deposition source 10a was filled with 10.0 [g] of Alq3, which is an organic EL material, as the vapor deposition material 11a, and the lid 14a was attached to the crucible 12a and set in the vapor deposition source 10a. Alq3 filled in the crucible 12a evaporates through the opening of the lid 14a. The joint between the crucible 12a and the lid 14a has a flange shape to prevent leakage from other than the opening portion of the evaporated Alq3. The crucible 12b of the vapor deposition source 10b is filled with 10.0 [g] of 3- (2-benzothiazolyl) -7- (diethylamino) coumarin (Coumarin 6), which is an organic EL material, as the vapor deposition material 11b, and the crucible 12b is covered with the lid 14b. And set in the vapor deposition source 10b. The Coumarin 6 filled in the crucible 12b evaporates through the opening of the lid 14b. The joint between the crucible 12b and the lid 14b has a flange shape to prevent leakage from other than the opening of the Coumarin 6.

蒸着源１０ａ、１０ｂは、基板３１の成膜面に対向して配置されている。制御用膜厚センサー２０ａ、２０ｂは、基板３１に向かう蒸着源１０ａ、１０ｂから発生した蒸気を遮ることのないような位置に配置した。制御用膜厚センサー２０ａは、蒸着源１０ａで発生し、蓋１４ａに設けられた開口部を介して出てくるＡｌｑ３の蒸気のみをモニターできる位置に配置した。制御用膜厚センサー２０ｂは、蒸着源１０ｂで発生し、蓋１４ｂに設けられた開口部を介して出てくるＣｏｕｍａｒｉｎ６の蒸気のみをモニターできる位置に配置した。   The vapor deposition sources 10 a and 10 b are arranged to face the film formation surface of the substrate 31. The control film thickness sensors 20a and 20b are arranged at positions that do not block the vapor generated from the vapor deposition sources 10a and 10b toward the substrate 31. The control film thickness sensor 20a is disposed at a position where only the vapor of Alq3 generated by the vapor deposition source 10a and coming out through the opening provided in the lid 14a can be monitored. The control film thickness sensor 20b was disposed at a position where only the vapor of the Coumarin 6 generated by the vapor deposition source 10b and exiting through the opening provided in the lid 14b can be monitored.

蓋１４ａ、１４ｂのそれぞれの開口部から、基板３１の成膜面までの距離は３００［ｍｍ］とした。蓋１４ａの開口部から、制御用膜厚センサー２０ａまでの距離は１００［ｍｍ］とした。蓋１４ｂの開口部から、制御用膜厚センサー２０ｂまでの距離は１００［ｍｍ］とした。   The distances from the openings of the lids 14a and 14b to the film formation surface of the substrate 31 were 300 [mm]. The distance from the opening of the lid 14a to the control film thickness sensor 20a was 100 [mm]. The distance from the opening of the lid 14b to the control film thickness sensor 20b was 100 [mm].

また、蒸着源１０ａ、１０ｂから発生した蒸気をモニターできる位置に、補正用膜厚センサー４０ａ、４０ｂを配置した。補正用膜厚センサー４０ａ、４０ｂにはそれぞれ、シャッター４１ａ、４１ｂが設けられている。蓋１４ａの開口部から、補正用膜厚センサー４０ａまでの距離は１００［ｍｍ］とした。蓋１４ｂの開口部から、補正用膜厚センサー４０ｂまでの距離は１００［ｍｍ］とした。   Further, the correction film thickness sensors 40a and 40b are arranged at positions where the vapor generated from the vapor deposition sources 10a and 10b can be monitored. The correction film thickness sensors 40a and 40b are provided with shutters 41a and 41b, respectively. The distance from the opening of the lid 14a to the correction film thickness sensor 40a was 100 [mm]. The distance from the opening of the lid 14b to the correction film thickness sensor 40b was 100 [mm].

基板３１として、１００［ｍｍ］×１００［ｍｍ］×０．７［ｍｍ］のガラス基板を、ゲートバルブ５１を介してチャンバー５０と接合された図示しない基板ストック装置に１１枚セットした。基板ストック装置内を図示しない真空排気系により１．０×１０−４［Ｐａ］以下まで排気した。チャンバー５０内も、図示しない真空排気系により１．０×１０−４［Ｐａ］以下まで排気し、排気した後にヒーター１３ａ、１３ｂでルツボ１２ａ、１２ｂを２００［℃］まで加熱した。ヒーターパワーはルツボ１２ａ、１２ｂの底面付近の温度を基に制御した。まず、ルツボ１２ａ、１２ｂの底面付近の温度を２００［℃］のまま３０［ｍｉｎ］保持してＡｌｑ３及びＣｏｕｍａｒｉｎ６の脱ガスを行った。 As the substrate 31, 11 glass substrates of 100 [mm] × 100 [mm] × 0.7 [mm] were set in a substrate stock apparatus (not shown) joined to the chamber 50 through the gate valve 51. The inside of the substrate stock apparatus was evacuated to 1.0 × 10 −4 [Pa] or less by a vacuum exhaust system (not shown). The chamber 50 was also evacuated to 1.0 × 10 −4 [Pa] or less by a vacuum exhaust system (not shown), and after evacuation, the crucibles 12a and 12b were heated to 200 [° C.] by the heaters 13a and 13b. The heater power was controlled based on the temperature near the bottom of the crucibles 12a and 12b. First, Alq3 and Coumarin 6 were degassed while maintaining the temperature near the bottom of crucibles 12a and 12b at 30 [min] while maintaining the temperature at 200 [° C.].

次に、制御用膜厚センサー２０ａ、２０ｂにおいて蒸着レートがそれぞれ１．０［ｎｍ／ｓｅｃ］、０．３［ｎｍ／ｓｅｃ］となる温度までルツボ１２ａ、１２ｂを加熱した。制御用膜厚センサー２０ａ、２０ｂにおいて、蒸着レートがそれぞれ１．０［ｎｍ／ｓｅｃ］、０．３［ｎｍ／ｓｅｃ］となったところで、基板ストック装置から基板搬送機構を用いて、チャンバー５０へ基板を１枚搬入して成膜を行った。基板３１の中心部分で膜厚が１３０［ｎｍ］となるように成膜して、成膜を終えた基板３１を直ちに搬出して、次の基板３１を搬入するというプロセスで、１１枚の基板３１に上記の条件で成膜を行った。基板３１への成膜は、制御用膜厚センサー２０ａの水晶振動子の周波数が０．０１５［ＭＨｚ］低下する毎に行った。また、各基板３１への成膜前に、シャッター４１ａ、４１ｂを開き、補正用膜厚センサー４０ａ、４０ｂによる蒸着レートに基づく補正値を求めて、制御用膜厚センサー２０ａ、２０ｂの蒸着レートを補正した。基板３１への成膜中、制御用膜厚センサー２０ａ、２０ｂによる蒸着レートの大きな変動は無かった。   Next, the crucibles 12a and 12b were heated to temperatures at which the deposition rates were 1.0 [nm / sec] and 0.3 [nm / sec] in the control film thickness sensors 20a and 20b, respectively. In the control film thickness sensors 20a and 20b, when the deposition rates become 1.0 [nm / sec] and 0.3 [nm / sec], respectively, the substrate stock apparatus transfers the chamber 50 to the chamber 50 using the substrate transport mechanism. One substrate was carried in to form a film. In the process of depositing the film at the central portion of the substrate 31 so that the film thickness becomes 130 [nm], the substrate 31 that has been deposited is immediately unloaded, and the next substrate 31 is loaded. No. 31 was formed under the above conditions. Film formation on the substrate 31 was performed each time the frequency of the crystal resonator of the control film thickness sensor 20a decreased by 0.015 [MHz]. Further, before film formation on each substrate 31, the shutters 41a and 41b are opened, a correction value based on the vapor deposition rate by the correction film thickness sensors 40a and 40b is obtained, and the vapor deposition rates of the control film thickness sensors 20a and 20b are determined. Corrected. During film formation on the substrate 31, there was no significant variation in the deposition rate by the control film thickness sensors 20a and 20b.

上記の方法で成膜を行い、実施例１と同様に、基板３１の中央部付近の膜厚を触針式段差計により測定した。成膜に用いた２つの補正値も含めて、それらのデータを図８、図９、図１０に示す。図１０から判るように、目標膜厚１３０［ｎｍ］に対して、測定膜厚は±１．９［％］の範囲におさまっている。このことから、Ａｌｑ３とＣｏｕｍａｒｉｎ６が足し合わされた膜厚は、基板３１の成膜中において精度良く制御できていたことが判った。   Film formation was performed by the method described above, and the film thickness in the vicinity of the center portion of the substrate 31 was measured with a stylus type step gauge in the same manner as in Example 1. The data including the two correction values used in the film formation are shown in FIG. 8, FIG. 9, and FIG. As can be seen from FIG. 10, the measured film thickness is within a range of ± 1.9 [%] with respect to the target film thickness of 130 [nm]. From this, it was found that the film thickness obtained by adding Alq3 and Coumarin 6 could be accurately controlled during the film formation of the substrate 31.

このように、本実施例によれば、Ａｌｑ３とＣｏｕｍａｒｉｎ６との共蒸着膜形成においても、補正用膜厚センサー４０ａ、４０ｂを用いることによって、安定した膜厚を維持できることが判った。   Thus, according to the present example, it was found that a stable film thickness can be maintained by using the correction film thickness sensors 40a and 40b even in the co-deposition film formation of Alq3 and Coumarin6.

本実施例においては、蒸着源として図２に示す構成を用いたが、これに限定されるものではない。蒸着源の数についても、これに限定されるものではない。また、制御用膜厚センサー及び補正用膜厚センサーの配置等もこれに限定されるものではない。   In the present embodiment, the configuration shown in FIG. 2 is used as the vapor deposition source, but the present invention is not limited to this. The number of vapor deposition sources is not limited to this. Further, the arrangement of the control film thickness sensor and the correction film thickness sensor is not limited to this.

基板に大判のものを用いる場合には、保持機構を回転させて、基板の成膜面内でむらのない膜厚分布を得ればよい。高精細マスクを用いる場合は、アライメントステージを用いてマスク蒸着による微細パターン形成を行ってもよい。この際、高精細マスクへの熱影響が問題となるようであれば、蒸着源においてリフレクターを多く用いればよいし、必要であればリフレクターに冷却パイプや空冷パイプを設けてもよい。   When a large-sized substrate is used, the holding mechanism may be rotated to obtain a uniform film thickness distribution in the film formation surface of the substrate. When a high-definition mask is used, a fine pattern may be formed by mask vapor deposition using an alignment stage. At this time, if the thermal influence on the high-definition mask becomes a problem, a large number of reflectors may be used in the vapor deposition source, and if necessary, a cooling pipe or an air cooling pipe may be provided in the reflector.

なお、実施例１と同様に、蒸着源を蒸着源搬送機構により搬送させて、基板に蒸着膜の形成を行ってもよい。また、基板とマスクを蒸着源搬送機構により搬送させて、蒸着膜の形成を行ってもよい。また、基板とマスクを、チャンバーの設置面に対して垂直、もしくは垂直に近い角度になるように保持機構で保持して蒸着膜の形成を行ってもよい。共蒸着膜形成を行う場合には、蒸着源を少なくとも２つ以上用いればよい。共蒸着膜形成の際は、制御用膜厚センサーと補正用膜厚センサーが、複数の蒸着源に個別に設けられていることが望ましく、必要に応じてパイプや遮蔽版などの蒸気遮断手段を設けてもよい。   As in the first embodiment, the vapor deposition source may be transported by the vapor deposition source transport mechanism to form the vapor deposition film on the substrate. Alternatively, the deposition film may be formed by transporting the substrate and the mask by a deposition source transport mechanism. Alternatively, the vapor deposition film may be formed by holding the substrate and the mask with a holding mechanism so as to be perpendicular to the chamber installation surface or at an angle close to perpendicular. When forming a co-evaporated film, at least two evaporation sources may be used. When forming a co-evaporated film, it is desirable that a control film thickness sensor and a correction film thickness sensor are individually provided in a plurality of vapor deposition sources, and if necessary, a vapor blocking means such as a pipe or a shielding plate is provided. It may be provided.

１０、１０ａ、１０ｂ 蒸着源
１１、１１ａ、１１ｂ 蒸着材料
１２、１２ａ、１２ｂ ルツボ
１３、１３ａ、１３ｂ ヒーター
１４、１４ａ、１４ｂ 蓋
１５、１５ａ、１５ｂ リフレクター
２０、２０ａ、２０ｂ 制御用膜厚センサー
３０ 保持機構
３１ 基板
３２ マスク
４０、４０ａ、４０ｂ 補正用膜厚センサー
４１、４１ａ、４１ｂ シャッター
５０ チャンバー
５１ ゲートバルブ 10, 10a, 10b Deposition source 11, 11a, 11b Deposition material 12, 12a, 12b Crucible 13, 13a, 13b Heater 14, 14a, 14b Lid 15, 15a, 15b Reflector 20, 20a, 20b Control film thickness sensor 30 Holding Mechanism 31 Substrate 32 Mask 40, 40a, 40b Film thickness sensor for correction 41, 41a, 41b Shutter 50 Chamber 51 Gate valve

Claims (4)

基板を保持する保持機構と、
前記基板に成膜するための蒸着材料の蒸気を発生させる蒸着源と、
前記基板に成膜中に蒸着材料の蒸着レートを計測し、前記蒸着源の温度制御を行うための制御用膜厚センサーと、
前記制御用膜厚センサーによる計測データに基づいて前記蒸着源の温度制御を行う制御系と、
蒸着材料の蒸着レートを計測し、前記制御用膜厚センサーによる計測データを補正するための補正値を前記制御系に出力する補正用膜厚センサーと、を有することを特徴とする真空蒸着装置。 A holding mechanism for holding the substrate;
A vapor deposition source for generating vapor of a vapor deposition material for forming a film on the substrate;
A film thickness sensor for control for measuring the evaporation rate of the evaporation material during film formation on the substrate and controlling the temperature of the evaporation source,
A control system for controlling the temperature of the vapor deposition source based on measurement data obtained by the control film thickness sensor;
A vacuum deposition apparatus comprising: a correction film thickness sensor that measures a deposition rate of a deposition material and outputs a correction value for correcting measurement data by the control film thickness sensor to the control system. 前記制御用膜厚センサー及び前記補正用膜厚センサーは、それぞれ水晶振動子によって蒸着レートを計測することを特徴とする請求項１に記載の真空蒸着装置。   The vacuum deposition apparatus according to claim 1, wherein each of the control film thickness sensor and the correction film thickness sensor measures a deposition rate with a crystal resonator. 基板への成膜中は前記補正用膜厚センサーへの蒸着材料の蒸気を遮断するためのシャッターを備えることを特徴とする請求項１又は２に記載の真空蒸着装置。   The vacuum evaporation apparatus according to claim 1, further comprising a shutter for blocking vapor of the evaporation material to the correction film thickness sensor during film formation on the substrate. 請求項１ないし３のいずれかに記載の真空蒸着装置を用いて有機ＥＬ素子の薄膜を成膜する工程を有することを特徴とする有機ＥＬ素子の製造方法。   A method for producing an organic EL element, comprising the step of forming a thin film of an organic EL element using the vacuum vapor deposition apparatus according to claim 1.
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