CN103305796A - Evaporation source apparatus, vacuum deposition apparatus, and method of manufacturing organic EL display device - Google Patents

Evaporation source apparatus, vacuum deposition apparatus, and method of manufacturing organic EL display device Download PDF

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Publication number
CN103305796A
CN103305796A CN2013100547875A CN201310054787A CN103305796A CN 103305796 A CN103305796 A CN 103305796A CN 2013100547875 A CN2013100547875 A CN 2013100547875A CN 201310054787 A CN201310054787 A CN 201310054787A CN 103305796 A CN103305796 A CN 103305796A
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China
Prior art keywords
mentioned
evaporation source
evaporation
substrate
film thickness
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CN2013100547875A
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Chinese (zh)
Inventor
三宅龙也
松浦宏育
峰川英明
矢崎秋夫
尾方智彦
山本健一
楠敏明
玉腰武司
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Hitachi Ltd
Hitachi High Tech Corp
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Hitachi Ltd
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Priority claimed from JP2012054184A external-priority patent/JP2013185252A/en
Priority claimed from JP2012079801A external-priority patent/JP2013209698A/en
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of CN103305796A publication Critical patent/CN103305796A/en
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition

Abstract

The invention provides a vacuum deposition apparatus and a film forming device, which can rapidly form aluminum metal film with even thickness on large-scale substrates and used for an organic EL upper electrode, and can continuously run for a long time. A ceramic crucible is adopted to prevent the climbing of aluminum. A deposition mechanism having evaporation source rows (3-2) of evaporation sources (3-1) which are transversely operated and longitudinally arranged and incline at a regulated angle towards the same direction is adopted, and thereby the metal films used for the organic EL upper electrode can be rapidly formed with respect to a large-scale longitudinal substrate (1-1), and continuous film forming for a long time can be conducted by means of a material feeder.

Description

The manufacture method of evaporation source and vacuum deposition apparatus and organic EL display
Technical field
The present invention relates to the manufacture method of evaporation source and vacuum deposition apparatus and organic EL display, relate in particular to form the manufacture method of the effective evaporation source of organic EL display and vacuum deposition apparatus and organic EL display at large-scale substrate.
Background technology
The organic EL that is used for organic EL display or means of illumination is to utilize the pair of electrodes of anode and negative electrode from sandwiching up and down the structure of the organic layer that is made of organic materials.For by applying voltage in pair of electrodes, from anode side organic layer injected hole, inject electronics from cathode side to organic layer, by they again in conjunction with and luminous combination.
This organic layer is the stacked structure that comprises the multilayer film of hole injection layer, hole transporting layer, luminescent layer, electron supplying layer, electron injecting layer.As the material that forms this organic layer, use macromolecular material and low molecular material.Use therein the occasion of low molecular material, use vacuum deposition apparatus to form organic film.
The impact of thickness that the characteristic of organic El device is subject to organic layer is larger.On the other hand, the substrate of formation organic film has the tendency that maximizes year by year.Therefore, use the occasion of vacuum deposition apparatus, need accurately control to be formed on organic film on the large substrate or electrode with the thickness of metallic film, and long-time continuous is being carried out work.Electrode is followed maximization with metallic film, needs low resistance, especially in display unit as the electrode materials (deposition material) on the top of organic layer, aluminum is more effective.
Yet, when in organic El device, forming electrode layer, in order to reduce the film damage to the organic layer that sandwiches, use vacuum evaporation to form electrode layer.So-called film damages, and refers to that luminescent properties descends, and descends even the irradiations such as thermal load, x-ray, electric wire, ion also might produce luminescent properties.Therefore, even in the occasion that forms as the aluminium electrode of low thermal resistance, also need to use vacuum evaporation.
In vacuum evaporation, as the evaporation source of the structure that forms discloses a plurality of crucibles of configuration in patent documentation 1 for making film at substrate continuously, scan obliquely the manufacturing installation of evaporation with respect to substrate.
In addition, in patent documentation 2, put down in writing the example that forms vacuum evaporation coating at large substrate.
In the evaporation coating device of patent documentation 2 records, for the utilising efficiency that improves the EL material and the homogeneity that realizes film forming, the support of the crucible of arranging a plurality of folding and unfolding EL materials of ground configuration is set in filming chamber.And, by making support-moving with respect to substrate with predetermined distance, improve handling up property.On the other hand, in the chamber of setting as preparation room the universal stage that possesses well heater is set, before crucible is transported to support, heats, further improve handling up property.
Having put down in writing the material that carries out vacuum evaporation in patent documentation 2 and 3 is the conventional example of metallic substance.In the feeding molten metal device of patent documentation 3 record, to produce in order preventing molten metal from dissolving tank guiding evaporator tank and to pick up obstruction, utilize physical method to monitor the liquid level of molten metal and detect in advance unusual.At this, as physical method, change configures a plurality of thermopairs to heavens, utilizes the detection signal of thermopair to detect liquid level.
In the metallic substance feedway of patent documentation 4 record, utilize resistive heating mode or high-frequency induction heating mode to heat the metallic substance in the crucible of being filled in as evaporation source, the evaporant of this metallic substance is attached on the evaporation object.And, in energising magnitude of voltage and the electrical current value of measuring the heating part, by according to the feed rate of the magnitude of voltage of measuring with the ratio control metallic substance of current value, realize to the supply of the uniform metallic substance of crucible.
The prior art document
Patent documentation 1: TOHKEMY 2005-32464 communique
Patent documentation 2: TOHKEMY 2004-111386 communique
Patent documentation 3: the real fair 8-363 communique of Japan
Patent documentation 4: TOHKEMY 2012-7226 communique
In patent documentation 1, a plurality of crucibles of configuration are disclosed, scan sideling the manufacturing installation of evaporation with respect to substrate.But, evaporation coating method and for a long time work of the unexposed substrate that arranges with respect to vertical formula.
Summary of the invention
The first purpose of the present invention is to solve the problem of above-mentioned prior art, provide and use the evaporation source row that are provided with a plurality of evaporation sources of arranging in same direction, to accordingly the metallic film take aluminum as the master being carried out the high speed film forming with the vertical large substrate of putting, can carry out vacuum deposition method and the device thereof of continuous film forming.
In addition, in the large-scale tv that uses organic EL etc., use the possibility of aluminium electrode high at the electrode of organic El device, need to guarantee the formation technology of aluminium electrode.As mentioned above, require this electrode layer to have low resistance, practical for it, importantly to use and reduce the vacuum evaporation that the film to organic layer damages and form the electrode layer of stipulating thickness, the working efficiency of raising device also realizes cost.In addition, when using vacuum evaporation, because limiting material to the input amount of evaporation with crucible, therefore for the non-stop run of implement device, must improve material supply method and control material feed rate.
In the evaporation coating device of above-mentioned patent documentation 2 records, possess a plurality of crucibles, the preparatory stage heating crucible before evaporate and improve the throughput capacity that metallic membrane is made.But, in the evaporation coating device of this patent documentation 2 records, do not take into full account the residual quantity in the crucible of the metal of crucible evaporation.If the residual quantity in the crucible is indefinite, then might supply with insufficient by material at long-term running hours.
When the occasion that forms the aluminium electrode layer at the upper surface of organic layer, use the hot graded properties boron nitride of PBN(that forms the test tube shape according to the characteristic of aluminum; Pyrolytic Boron Nitride) the Michel Knuysen element (K element) of system.As using this K element and holding the method for the amount of the aluminium in the K element, have the method for using visual or liquid level meter, the method that detects any electrical signal.
But, when using pick up camera or when visual, in the vacuum evaporation groove, covering camera lens or the hagioscope of pick up camera from the metal (aluminium) of crucible evaporation, can't life-time service.In addition, in the method for the use liquid level meter of patent documentation 3 record, be difficult in vacuum tank thermopair is positioned in a plurality of stoves and configure.In addition, exist the aluminium of evaporation to be attached on the thermopair and produce the possibility of signal error.
Supplying with to the heating part in the method wiry of patent documentation 4 records, be the occasion of aluminium at wire, can't realize aluminium-vapour deposition in the time of near crucible temperature not being heated to 1400 ℃.When the front end with the aluminum metal silk is close near the molten metal of crucible, because from the thermal conduction of leading section wiry, each temperature of wire rises sharp.Its result and becomes 1400 ℃ and compares also as the position of the unusual melting temperature of the low temperature private side to feeding section moves, and there is the possibility that produces the undesirable condition around crucible that disperses in wire not arriving the position fusing of crucible.
The second purpose of the present invention is finished in view of the undesirable condition of above-mentioned prior art,, also detect the liquid level of the metal in the evaporation source and supply with continuously and stably metal on substrate during film forming even its purpose is to use in order to form the metal electrode such as aluminium the evaporation source such as Michel Knuysen element (being commonly referred to the K element) that the metals such as aluminium are carried out evaporation.Another object of the present invention is to when using evaporation source to carry out metal evaporation in order to form metal electrode, utilize simple method to detect the liquid level of molten metal, and according to the steam output of the tank level control metal of this detection.
In order to realize above-mentioned the first purpose, evaporation source of the present invention possesses: the evaporation source row, it is made of a plurality of evaporation sources of arranging in the vertical, and each evaporation source part is opening in order to spray steam, and major axis separately tilts in the same direction with respect to the angle of horizontal direction with regulation; And a plurality of thickness watch-dogs, it is set to the quantity identical with above-mentioned evaporation source accordingly with each above-mentioned evaporation source, and the thickness from the deposition material of each above-mentioned evaporation source is carried out instrumentation.
In the evaporation source of the First Characteristic of the invention described above, Second Characteristic of the present invention is, above-mentioned evaporation source is listed as substrate with respect to vertical formula configuration relatively to carry out an axle at left and right directions and move.
In the evaporation source of the First Characteristic of the invention described above or Second Characteristic, the of the present invention the 3rd is characterised in that, the crucible structure of above-mentioned evaporation source for outlet towards laterally.
In addition, to achieve these goals, the substrate that vacuum deposition apparatus of the present invention has vertical formula placement substrate sets up an organization, and evaporation source row, the of the present invention the 4th is characterised in that, above-mentioned evaporation source is listed as by a plurality of evaporation sources of arranging in the vertical and consists of, each evaporation source part is opening in order to spray steam, major axis separately tilts in same direction with respect to the angle of horizontal direction with regulation, and, above-mentioned vacuum deposition apparatus possesses: a plurality of thickness watch-dogs, it is set to the number identical with above-mentioned evaporation source accordingly with each above-mentioned evaporation source, and the thickness from the deposition material of each above-mentioned evaporation source is carried out instrumentation; Export the film thickness monitoring meter of control signal according to the thickness of above-mentioned a plurality of thickness watch-dog instrumentations; And the evaporation source power supply of controlling above-mentioned a plurality of evaporation sources according to above-mentioned control signal.
In the vacuum deposition apparatus of the 4th feature of the invention described above, the of the present invention the 5th is characterised in that, standby power supply also is set, above-mentioned standby power supply is taken into account above-mentioned evaporation source power supply supply power to above-mentioned film thickness monitoring when having a power failure, even also can carry out the temperature control of the crucible of certain hour when having a power failure.
In the vacuum deposition apparatus of the 4th feature of the invention described above or the 5th feature, the of the present invention the 6th is characterised in that, above-mentioned thickness watch-dog has eyelet.
In the vacuum deposition apparatus of the 6th feature of the invention described above, the of the present invention the 7th is characterised in that, the above-mentioned eyelet of above-mentioned thickness watch-dog is the eyelet of tubular.
In the vacuum deposition apparatus of the 6th feature of the invention described above or the 7th feature, the of the present invention the 8th is characterised in that, the internal diameter of above-mentioned eyelet is φ 4～6mm.
In the vacuum deposition apparatus of any record of the 4th feature to the eight features of the invention described above, the of the present invention the 9th is characterised in that, have for the material supplying machine that drops into above-mentioned deposition material from oblique upper direction towards above-mentioned evaporation source, the above-mentioned materials supplying machine possesses cooling body in the input port.
In addition, to achieve these goals, the manufacture method of organic EL display of the present invention utilizes the closed substrate sealing to be formed with thin film transistor, organic EL layer, and the TFT substrate that clips the electrode layer of above-mentioned organic EL layer, the tenth of the manufacture method of organic EL display of the present invention is characterised in that, vertical formula configuration is formed with the TFT substrate of thin film transistor in the deposited chamber of vacuum deposition apparatus, relatively set the evaporation source row with above-mentioned TFT substrate, this evaporation source row have longitudinally configured the evaporation source that a plurality of folding and unfoldings are used for above-mentioned organic EL layer or electrode layer are carried out the deposition material of film forming, the major axis of above-mentioned evaporation source is with respect to the angle tilted configuration of horizontal direction with regulation, heat by the crucible to above-mentioned evaporation source, make above-mentioned deposition material evaporation, move by making above-mentioned evaporation source be listed in above-mentioned vertically reaching on the direction vertical with above-mentioned horizontal direction, and on above-mentioned TFT substrate the above-mentioned deposition material of evaporation, thereby form above-mentioned organic EL layer.
In the manufacture method of the organic EL display of the tenth feature of the invention described above, the of the present invention the 11 is characterised in that, in above-mentioned deposited chamber, possess for material supplying machine from deposition material to each above-mentioned evaporation source that supply with, the above-mentioned materials supplying machine cools off the input port of above-mentioned deposition material, prevent the obstruction of above-mentioned deposition material, the oblique upper direction from above-mentioned evaporation source under the state of the vacuum state of keeping above-mentioned deposited chamber is supplied with above-mentioned deposition material.
When the aluminium that uses as evaporation source as metal, according to the vaporization temperature of aluminium high and with the relation of the affinity of aluminium, as in vacuo crucible of configuration, generally use the test tube shape that is called as the K element and at the peristome side trumpet-shaped PBN container made of opening a little.Using the occasion of this trumpet-shaped crucible, from the evaporation scope of the space side of the aluminium that evaporates in the crucible or the steam output change in depth according to the liquid level of the aluminium in from the opening end of crucible to crucible.According to this discovery, in the present invention, following vacuum deposition apparatus has been proposed also.
Namely, in order to realize above-mentioned the second purpose, the of the present invention the 12 is characterised in that, make folding and unfolding in evaporation source evaporating materials evaporation and on the substrate that leaves the evaporation source configuration in the evaporation coating device of film forming, a plurality of mensuration are set from the film thickness gauge of the film forming amount of the evaporating materials of above-mentioned evaporation source evaporation with respect to an evaporation source, possess deposition material amount computing unit, it calculates the amount of the evaporating materials in this evaporation source according to the ratio of the film forming amount of at least two film thickness gauges in these a plurality of film thickness gauges.
And, in the 12 feature of the invention described above, the of the present invention the 13 is characterised in that, possesses a plurality of above-mentioned evaporation sources, and the double mensuration of doing of a film thickness gauge in above-mentioned at least two film thickness gauges is from the film thickness gauge of the vapor-deposited film thickness of the evaporating materials of adjacent evaporation source evaporation.In addition, in the 12 or the 13 feature of the invention described above, the of the present invention the 14 is characterised in that, above-mentioned evaporation source possesses the nozzle of ejection evaporating materials, and above-mentioned at least two film thickness gauges with respect to the central shaft of the said nozzle of the evaporation source of the amount of wanting to calculate the evaporating materials in the evaporation source with different angle settings.
In addition, in the 12 or the 13 feature of the invention described above, the of the present invention the 15 is characterised in that, above-mentioned film thickness gauge possesses be used to two peristomes that are taken into the evaporating materials of measuring the film forming amount at least, possesses the evaporating materials that prevents from measuring the film forming amount enters film thickness gauge by this peristome closing mechanism at least one of this peristome.In addition, in the 15 feature of the invention described above, the of the present invention the 16 is characterised in that, possesses by cartridge at above-mentioned at least two peristomes to consist of, and the evaporating materials that the film forming amount is measured in restriction enters the eyelet of the amount of this peristome.
In addition, in the 12 or the 13 feature of the invention described above, the of the present invention the 17 is characterised in that, at least a portion of above-mentioned evaporation source is made of pyrolytic boron nitride.In addition, in the 12 or the 13 feature of the invention described above, the of the present invention the 18 is characterised in that, above-mentioned evaporating materials is aluminum.In addition, in the 12 or the 13 feature of the invention described above, the of the present invention the 19 is characterised in that, aforesaid substrate is to comprising that the layer of organic EL layer carries out the substrate of film forming.
Effect of the present invention is as follows.
According to the present invention, therefore, even large substrate, also can be only by increasing the evaporation source number of evaporation source row, even size can both be carried out evaporation arbitrarily.In addition, by at a plurality of evaporation source row of the indoor preparation of vacuum evaporation, carry out evaporation with switching, can carry out for a long time work.
In addition, according to the present invention, owing to being configured in the film thickness gauge that uses in the vacuum evaporation at two different places, the ratio of the Thickness Variation intensity that detects according to this film thickness gauge detects the liquid level as the aluminium of the evaporation source in the evaporation source, therefore can correspondingly supply with continuously and stably aluminium with this liquid level.In addition, can be with tank level control certain or specified altitude.In addition, according to the present invention, owing to when using evaporation source to carry out aluminium-vapour deposition, detecting the liquid level of aluminium with simple method, therefore can be according to the steam output of the tank level control aluminium of this detection.
Description of drawings
Fig. 1 is the figure that schematic diagram and the explanation of structure of evaporation source row and deposited chamber, substrate, the thickness watch-dog of the expression first embodiment of the present invention moved.
Fig. 2 is the figure that schematic diagram and the explanation of structure of evaporation source row and deposited chamber, substrate, the thickness watch-dog of the expression second embodiment of the present invention moved.
Fig. 3 is the figure that schematic diagram and the explanation of structure of evaporation source row and deposited chamber, substrate, the thickness watch-dog of the expression third embodiment of the present invention moved.
Fig. 4 is the figure that schematic diagram and the explanation of structure of evaporation source row and deposited chamber, substrate, the thickness watch-dog of the expression fourth embodiment of the present invention moved.
Fig. 5 is the figure that schematic diagram and the explanation of structure of evaporation source row and deposited chamber, substrate, the thickness watch-dog of the expression fifth embodiment of the present invention moved.
Fig. 6 A is the schematic diagram of the evaporation source cross section structure of the expression fifth embodiment of the present invention.
Fig. 6 B is the figure that schematic diagram and the explanation of structure of evaporation source row and deposited chamber, substrate, the thickness watch-dog of the expression fifth embodiment of the present invention moved.
Fig. 7 is that each deposition material of expression is with respect to the figure of the saturation vapour pressure of crucible temperature.
Fig. 8 is the process picture sheet of an example of expression organic EL display production process of the present invention.
Fig. 9 A is the schematic diagram of expression evaporation source cross section structure of the present invention.
Fig. 9 B is the schematic diagram of the evaporation source cross section structure of the expression seventh embodiment of the present invention.
Fig. 9 C is the schematic diagram of the evaporation source cross section structure of the expression seventh embodiment of the present invention.
Fig. 9 D is the schematic diagram of the evaporation source cross section structure of the expression seventh embodiment of the present invention.
Figure 10 is the schematic diagram of an embodiment of evaporation coating device of the present invention.
Figure 11 is the detailed figure of the evaporation source section that possesses of expression evaporation coating device shown in Figure 10.
Figure 12 is the figure of relation of the range of explanation liquid level and evaporation.
Figure 13 is the exploded perspective view of an embodiment of thickness watch-dog.
Figure 14 is the figure of the configuration example of expression thickness watch-dog.
Among the figure: 1-1,1-2-substrate, 2-steam, 3-1-evaporation source, 3-2-evaporation source row, 3-3,3-4-evaporation source row, 5-(vacuum) deposited chambers, 7,7-1,7-2,7-3,7-4,7-5,7a～7e, 71,72-thickness watch-dog, 8-film thickness monitoring meter, 9-evaporation source power supply, 10-control computer, 11-well heater, 13-evaporating materials, 14-Michel Knuysen element (K element), 40-deposition material, 41-eyelet, 42-cylinder, 50-valve, 51-cooling body, 60-standby power supply.
Embodiment
Below, the invention of embodiment one to embodiment eight is in order to prevent from becoming adhesional wetting or the climbing of problem in aluminium-vapour deposition, adopt the crucible structure of integrated pottery system, the material that makes crucible for not with the pyrolytic boron nitride (PBN) of aluminum reaction, set this PBN crucible by the angle with regulation, relatively make the evaporation source row transverse shifting that configures sideling a plurality of evaporation sources with respect to substrate, evaporation is on the substrate of vertical formula configuration.
In addition, the present invention is for corresponding with vertical formula large substrate, the arranging in the vertical more than at least two on same direction with the evaporation source of identical angle inclination and mechanism and the determining film thickness watch-dog of evaporation of configuration and above-mentioned evaporation source same number.
As an embodiment of vacuum deposition apparatus of the present invention, application is in the example of the manufacturing of organic El device.The manufacturing installation of organic El device is to form hole injection layer or hole transporting layer, luminescent layer (organic film) at metal electrode layer (anode), utilizes vacuum evaporation to form the thin film layer of multiple material at lower electron injecting layer or the electron supplying layer etc. of forming of metal electrode layer (negative electrode, upper electrode) multilayer laminatedly.
Vacuum deposition apparatus of the present invention possesses in deposited chamber vertically configuration by the substrate of the substrate of evaporation object set up an organization (not shown), in deposited chamber, use the crucible of pottery system, in order to prevent the climbing of aluminium, and corresponding with vertical formula large substrate, have more than at least two, longitudinal arrangement is in the structure of evaporation source evaporation of inclined for the angle of regulation.
Below, use embodiment and accompanying drawing to explain content of the present invention.
But the present invention is not limited to the embodiment of following explanation, in the technical field under the present invention, certainly also comprises and can both revise or improve invention of the present invention according to thought of the present invention and spirit so long as have the personnel of common knowledge.
In addition, in the explanation of each figure, to having the identical reference marks of textural element mark of identical function, for fear of repetition, description thereof is omitted as far as possible.
(embodiment one)
Among Fig. 1, the structure of vacuum deposition apparatus of the present invention has substrate 1-1, evaporation source 3-1, evaporation source row 3-2 and thickness watch-dog 7 in deposited chamber 5, outside deposited chamber 5, have film thickness monitoring meter 8 for the control thickness, be used for the temperature of control evaporation source evaporation source power supply 9, film thickness monitoring meter 8 and evaporation source power supply 9 are controlled linkedly and the control that is used for storage evaporation data with computer 10.Evaporation source 3-1 for example is Michel Knuysen element (K element).This K element comprise take pottery (PBN, aluminum oxide, carbon material etc.) for the crucible of material, be used for this crucible of heating well heater, be used for the control crucible temperature thermopair, be used for preventing that dissipation of heat from arriving heat seal and the water cooled seal part of outside.In addition, from the outside to vacuum deposition apparatus supply power (not shown).
Thickness watch-dog 7 is to the thickness data of film thickness monitoring meter 8 output instrumentations.Film thickness monitoring meter 8 is exported control signals according to the thickness data from 7 outputs of thickness watch-dog to evaporation source power supply 9.Evaporation source power supply 9 is controlled the temperature of the crucible of each evaporation source 3-1 according to the control signal of input.Its result can carry out the uneven little film forming of film thickness distribution.
As in the past, be one occasion at evaporation source, the deposition material of folding and unfolding in evaporation source by heating crucible and as steam from evaporation source with respect to the substrate of vertical formula configuration towards oblique ejection.The steam of the deposition material of ejection is deposited on the substrate, forms evaporated film, but because the film for forming from oblique evaporation, so evaporated film is asymmetrical film thickness distribution on above-below direction.For example, the thickness attenuation of the evaporated film of the periphery of substrate, it is large that near the thickness the substrate center becomes, and is uneven large film concerning being used for organic film or metallic film, and designability is poor.
In embodiment one, as shown in Figure 1, the evaporation source 3-1 that longitudinal arrangement at equidirectional with predetermined angular tilts more than two at least also carries out evaporation.In other words, the major axis of a plurality of evaporation source 3-1 of evaporation source row 3-2 tilts in the same direction with respect to the angle of the horizontal direction that forms evaporated film with regulation.Heating is the deposition material of folding and unfolding in evaporation source 3-1 respectively, as steam from evaporation source to oblique ejection.The steam of the deposition material of ejection is deposited on the substrate 1-1, forms evaporated film.
Its result, by using the evaporation source row 3-2 identical with the length of the above-below direction of substrate 1-1, evaporated film 6-1 at evaporation source 3-1 be one occasion in the asymmetrical film thickness distribution of above-below direction, the inequality of film thickness distribution 6-4 becomes greatly.But, by longitudinal arrangement, overlap in the film thickness distribution of the asymmetrical film thickness distribution of above-below direction with the evaporation source 3-1 of vicinity, can reduce to be formed on the inequality of the film thickness distribution 6-5 on the substrate.
In the embodiment in figure 1, by fixing base 1-1, make evaporation source row 3-2 move left and right, implement the film forming to substrate integral body.But, even fixing evaporation source row 3-2 makes substrate 1-1 transverse shifting and carries out evaporation, also can obtain identical effect.
In addition, not shown in Fig. 1, by use possess can be from the outside of deposited chamber 5 equipment of the carrying mechanism of supplying substrate 1-1 in the vacuum continuously, can carry out substrate with batch type on one side and supply with, Yi Bian film forming continuously.In addition, shelter part by between substrate 1-1 and evaporation source row 3-2, arranging, can carry out pattern and form.
In addition, by between substrate 1-1 and evaporation source row 3-2, masking plate being set, can form pattern.
(embodiment two)
Fig. 2 is the figure of schematic diagram and explanation action of basic structure of an embodiment of vacuum deposition apparatus of the present invention.In the vacuum deposition apparatus of the present embodiment, the structure in the deposited chamber 5 is identical with embodiment one.But, outside deposited chamber 5, on the structure of embodiment one, also have standby power supply 60.
That is, the crucible of the evaporation source 3-1 of the embodiment of Fig. 2 in order to prevent from having a power failure etc. breaks, and has added standby power supply 60.
As explanation among the embodiment one, the crucible that consists of evaporation source 3-1 of the present invention is pottery system (PBN, aluminum oxide, carbon material etc.).Therefore since near the fusing point of deposition material pottery and the coefficient of thermal expansion of deposition material different, have the occasion that the generation crucible breaks.Therefore, by being controlled at rising and the decline of near the crucible temperature the fusing point, prevent that crucible from breaking.
But because evaporation source power supply 9 is not exported when having a power failure etc., so crucible temperature descends sharp, therefore produces crucible and breaks.
In this second embodiment, as shown in Figure 2, prepare standby power supply 60, when having a power failure, supply power is switched to standby power supply 60, supply with film thickness monitoring meter 8, evaporation source power supply 9 and control computer 10.Its result even have a power failure, because film thickness monitoring meter 8, evaporation source power supply 9 and control are moved with computer 10, therefore can prevent the rapid temperature variation when crucible has a power failure.Therefore, can suppress the generation that crucible breaks.
For example, be the occasion of aluminum at evaporation source, 660 ℃ is fusing point.Between the front and back of 660 ℃ of this fusing points 60 ℃ (600 ℃～720 ℃), use standby power supply 60, control the rise and fall of the temperature of crucible with the variable quantity below 1 ℃/minute.Its result can prevent that crucible from breaking.
In addition, during not implementing aluminium film forming (not carrying out film forming), by making evaporation source 3-1 in advance idle running in 800 ± 50 ℃ scope, the aluminum during beyond when being suppressed at film forming and the consumption of electric power and can work long hours.
In the embodiment of Fig. 2, by fixing base 1-1 and make evaporation source row 3-2 move left and right, implement the film forming to substrate integral body.But, even fixing evaporation source row 3-2 makes substrate 1-1 transverse shifting and carries out evaporation also can obtain same effect.
The thickness data from thickness watch-dog 7 to film thickness monitoring meter 8 output instrumentations.Film thickness monitoring meter 8 outputs to evaporation source power supply 9 according to the thickness data from 7 outputs of thickness watch-dog with control signal.Evaporation source power supply 9 is controlled the temperature of the crucible of each evaporation source 3-1 according to the control signal of input.Its result can carry out the uneven little film forming of film thickness distribution.
In addition, not shown in Fig. 2, possess the equipment that can supply with and take out of continuously from the outside of deposited chamber 5 carrying mechanism of substrate 1-1 in the vacuum but can use.By using this equipment, can be on one side with the batch type supplying substrate, Yi Bian continuously a plurality of substrate 1-1 are carried out film forming.
In addition, by between substrate 1-1 and evaporation source row 3-2, masking plate being set, can form pattern.
(embodiment three)
In the embodiment of Fig. 1 and Fig. 2, control thickness with respect to evaporation source row 3-2 with a thickness watch-dog 7.But the crucible temperature of each evaporation source 3-1 of evaporation source row 3-2 is different with respect to power, so the quantitative change of the steam of each evaporation source 3-1, has the large possibility of uneven further change of film thickness distribution.Therefore, as shown in this embodiment, by near the vapor outlet port of each evaporation source 3-1 of evaporation source row 3-2, a thickness watch-dog 7 being set respectively, can carry out high-precision film thickness monitoring.Its result can reduce the inequality of film thickness distribution.
As shown in Figure 3, arrange one by one accordingly by each evaporation source 3-1 that makes thickness watch-dog 7-1～7-5 and evaporation source row 3-2, can carry out high-precision film thickness monitoring.
Thickness watch-dog 7-1～7-5 uses quartzy vibrating member instrumentation thickness.Usually, quartzy vibrating member is the about 0.1mm of φ 14mm(thickness of slab) discoid, be the structure that clips the crystal of φ 14mm with two electrodes (evaporation face side and electrode surface side).It is the structure that clips with evaporation face side and electrode surface side.The electrode of evaporation face side approximately is the size of φ 14mm, and the electrode of electrode side approximately is the size of φ 6mm.Usually, set the eyelet (not shown) in the hole that has the about φ 8mm of internal diameter on the electrode top of evaporation face side, pile up deposition material in evaporation face lateral electrode, by measuring the resonant frequency of quartzy vibrating member, the variation of the resonant frequency of detection assay comes the instrumentation thickness.
Thickness watch-dog 7-1～7-5 is to the thickness data of film thickness monitoring meter 8 output instrumentations.Film thickness monitoring meter 8 is according to the thickness data from thickness watch-dog 7-1～7-5 output, to evaporation source power supply 9 output control signals.Evaporation source power supply 9 is controlled the temperature of the crucible of each evaporation source 3-1 according to the control signal of input.Its result can carry out the uneven little film forming of film thickness distribution.
In addition, in the embodiments of figure 3, by fixing base 1-1 and make evaporation source row 3-2 move left and right, implement the film forming to substrate integral body.But, even fixedly evaporation source row 3-2 makes substrate 1-1 transverse shifting and carries out evaporation and also can obtain identical effect.
In addition, by between substrate 1-1 and evaporation source row 3-2, masking plate being set, can form pattern.
(embodiment four)
In the embodiment three of Fig. 3, set accordingly respectively the thickness watch-dog with each evaporation source 3-1 of evaporation source row 3-2.But, also need to prevent the impact of the temperature that the thermal radiation from the mixing of the steam of each evaporation source and origin self-evaporatint n. source produces.In the present embodiment, by the eyelet of the tubular that has the hole is set, can prevent mixing and the thermal-radiating impact of steam 2 before thickness watch-dog 7-1～7-5.
Fig. 4 is the figure of schematic diagram and explanation action of basic structure of an embodiment of the vacuum deposition apparatus of the present embodiment.Thickness watch-dog 7-1～7-5 uses quartzy vibrating member instrumentation thickness.Usually, quartzy vibrating member is the about 0.1mm of φ 14mm(thickness of slab) discoid, be the structure that clips the crystal of φ 14mm with two electrodes (evaporation face side and electrode surface side).It is the structure that clips with evaporation face side and electrode surface side.The electrode of evaporation face side approximately is the size of φ 14mm, and the electrode of electrode side approximately is the size of φ 6mm.Usually, set the eyelet 41 in the hole that has the about φ 8mm of internal diameter on the electrode top of evaporation face side, pile up deposition material in evaporation face lateral electrode, by measuring the resonant frequency of quartzy vibrating member, the variation of the resonant frequency of detection assay comes the instrumentation thickness.
Thickness watch-dog 7-1～7-5 is to the thickness data of film thickness monitoring meter 8 output instrumentations.Film thickness monitoring meter 8 is according to the thickness data from thickness watch-dog 7-1～7-5 output, to evaporation source power supply 9 output control signals.Evaporation source power supply 9 is controlled the temperature of the crucible of each evaporation source 3-1 according to the control signal of input.Its result can carry out the uneven little film forming of film thickness distribution.
In the present embodiment, in order to avoid the thermal radiation from evaporation source, set the eyelet 41 in the hole that has about 4～6mm in the electrode center upper portion of evaporation face side.Its result can be reduced to 1/4～1/2 with thermal-radiating impact.
The eyelet 42 of tubular of length of the regulation of φ 4～30mm also is installed on above-mentioned eyelet 41 in addition.Its result can reduce the mixing from the steam 2 of each evaporation source.In addition, in the occasion of the eyelet 42 that tubular is installed, can omit eyelet 41.
(embodiment five)
In embodiment one to embodiment four, illustrate a substrate 1-1 is set in deposited chamber 5, one by one substrate is carried out the structure of evaporation.But, as shown in Figure 5, by in the deposited chamber 5 interior substrate that arranges more than two, effectively film forming.Fig. 5 possesses other substrates 1-2 in contiguous position when changing substrate 1-1, reduce the time that evaporation source row 3-2 does not carry out evaporation, effectively uses the structure of the deposition material in the crucible of evaporation source 3-1.
Below, this embodiment is described.In addition, the action of the film thickness monitoring meter 8 of control thickness and evaporation source power supply 9 is identical with embodiment three or embodiment four.
In Fig. 5, make substrate 1-1 and the substrate 1-2 position relative with evaporation source row 3-2, with the stand-by station of evaporation source row 3-2 as between substrate 1-1 and the substrate 1-2, carry out moving back and forth of axle and substrate 1-1 is carried out film forming a horizontal side (for example right), in its film forming, carry out the setting of substrate 1-2.After substrate 1-1 is carried out film forming, then carry out moving back and forth of axle and substrate 1-2 is carried out film forming to horizontal the opposing party (for example left).Substrate 1-2 is being carried out between film stage, taking out of the substrate 1-1 that finishes film forming, by carrying out changing the also preparation of film forming, the loss of the working hour in the time of can reducing film forming with next substrate.In addition, can carry out film forming to many substrates.
When in a single day evaporation source 3-1 makes crucible temperature rise to vaporization temperature, just always spray deposition material.Therefore, for evaporation source 3-1 being worked long hours and not losing inner deposition material ground and use, reducing the time of not carrying out evaporation as the present embodiment is effective means.The present embodiment is the example of two substrates of evaporation alternately, even but many (the substrate numbers more than three) also are effective.In addition, even be not the batch type of the present embodiment, while and with one chip by fixing evaporation source 3-1 and make substrate continuously transverse shifting carry out evaporation, also can improve the utilising efficiency of vacuum deposition apparatus.
In addition, not shown in Fig. 5, in the present embodiment, by use possess can be from the outside of deposited chamber 5 continuously to the equipment of the carrying mechanism of the deposited chamber 5 interior supplying substrate 1-1 of vacuum and substrate 1-2, Yi Bian can be on one side with batch type supplying substrate film forming continuously.
Not shown in Fig. 5, substrate 1-1 by use possess can be from the outside of deposited chamber 5 equipment of the carrying mechanism of supplying substrate 1-1 in the vacuum continuously, supply with continuously film forming Yi Bian can carry out substrate with batch type on one side.In addition, shelter part by between substrate 1-1 and evaporation source row 3-2, arranging, can carry out pattern-forming.
In addition, by between substrate 1-1,1-2 and evaporation source row 3-2, masking plate being set, can form pattern.
(embodiment six)
In embodiment one to embodiment five, when the deposition material in the ejection crucible, for the crucible to evaporation source 3-1 replenishes deposition material 4, need to temporarily stop vacuum deposition apparatus.That is, there is restriction in the non-stop run at vacuum deposition apparatus.Take aluminum as example, below use Fig. 6 A and Fig. 6 B explanation to be used for the embodiment of non-stop run.
In the present embodiment, shown in Fig. 6 B, in deposited chamber 5, possess material supplying machine 11, can not stop vacuum deposition apparatus ground and carry out replenishing of deposition material under the state of vacuum state keeping.
For example, are occasions of aluminum at deposition material 40, mainly use the solids shape material of number mm size.
As shown in Figure 6A, evaporation source row 3-2 is moved to the position of material supplying machine 11, in vacuo drop into from material supplying machine 11 from the material of oblique upper direction with the solids shape.Thus, can carry out the non-stop run of vacuum deposition apparatus.Shown in the schematic cross-section as shown in Figure 6A, the structure of material supplying machine 11 is that material supplying machine 11-1 configures a plurality of structures in the mode corresponding with each evaporation source 3-1.
But, because evaporation source row 3-2 is adding the input of pining for carrying out material, therefore need temporarily the evaporation source drop in temperature to be arrived not vaporific temperature.Fig. 7 represents that each deposition material is with respect to the saturation vapour pressure of crucible temperature.In Fig. 7, be that crucible temperature is more than 1100 ℃ in the evaporation, the vapour pressure of aluminium is the above degree of several PA.When making crucible temperature drop to 800 ℃ of left and right sides, vapour pressure is below the 1E-3PA.
As illustrated among the embodiment one, in the time of 600 ℃～720 ℃ before and after the fusing point that crucible temperature is dropped to aluminum, owing to having the possibility that crucible breaks, the above temperature of therefore preferred said temperature scope.Therefore, about 800 ℃ be suitable temperature.But 800 ℃ is more than the fusing point of aluminium, therefore as shown in Figure 6A, in the occasion of using material supplying machine 11-1, owing to being subject to impact from the heat of evaporation source near the material input port when supplying with, exists aluminum 40 to melt and the possibility stopped up.
Therefore, will drop to below the fusing point of aluminium near the material input port by utilizing cooling body 51, prevent the obstruction of material.
Fig. 6 A, Fig. 6 B are not shown, but the mechanism of weight that can instrumentation evaporation source row 3-2 for example can be set the opportunity that material is supplied with, and by the weight of instrumentation evaporation source row 3-2, supply with in the occasion that becomes below the weight of regulation.
(embodiment seven)
In embodiment one to embodiment six, evaporation source 3-1 uses the crucible of the pottery system of cylindric and beaker shape, but in this occasion, owing to arranging sideling and using, therefore shown in Fig. 9 A, deposition material 4 can not be put into the maximum of crucible capacity.In addition, because steam 2 is to oblique ejection, be asymmetrical film thickness distribution on the above-below direction of substrate 1-1 or substrate 1-2 therefore, the range of minimizing film thickness distribution and have boundary.
As the present embodiment, be the cross section structure shown in Fig. 9 B, Fig. 9 C, Fig. 9 D by the crucible structure that makes evaporation source 3-1, can increase the input amount of deposition material 4, improve film thickness distribution.Fig. 9 B is for making crucible horizontal, with around the neck of exit portion than bottom throttling, even the structure that horizontal deposition material 4 also can not run off, because the steam direction also is horizontal, therefore the above-below direction film thickness distribution at substrate 1-1 is also symmetrical, by arranging a plurality of evaporation source 3-1, can improve whole film thickness distribution.The major axis of the evaporation source 3-1 of Fig. 9 B is horizontal direction, and the opening of ejection steam is formed on the top side in center than the vertical direction of evaporation source.
Fig. 9 C is that vertically only making exit portion is horizontal structure for making crucible, owing to increasing the input amount of deposition material 4, the steam direction also is horizontal, therefore the above-below direction film thickness distribution at substrate 1-1 is also symmetrical, by arranging a plurality of evaporation source 3-1, also can improve whole film thickness distribution.The major axis of the evaporation source 3-1 of Fig. 9 C is vertical direction, and the opening of ejection steam is formed on the top side in center than the vertical direction of evaporation source.But in the occasion of Fig. 9 C, in order longitudinally to arrange a plurality of evaporation source 3-1, crucible longitudinally extends, and therefore can't make evaporation source interval each other narrow, therefore has the wide occasion of film thickness distribution.
Fig. 9 D is for making the oblique inclination of crucible, only making exit portion is horizontal structure, the input amount of deposition material 4 does not have different from the occasion of Fig. 9 A substantially, but because the steam direction is horizontal, therefore the above-below direction film thickness distribution at substrate 1-1 is also symmetrical, by arranging a plurality of evaporation source 3-1, also can improve whole film thickness distribution.
On the other hand, occasion at the crucible structure that utilizes PBN shop drawings 9B, Fig. 9 C and Fig. 9 D, owing to utilizing CVD(Chemical Vapor Deposition) film forming manufacturing PBN crucible, therefore in the occasion that is the structure of complexity, spended time, the crucible manufacturing cost uprises, and therefore can be the occasion of the roomy film of film thickness distribution, can adopt the crucible structure of Fig. 9 A that can reduce the crucible manufacturing cost.
(embodiment eight)
Fig. 8 is the process picture sheet of an example of expression organic EL display production process.In embodiment one～embodiment seven, the operation of the metal evaporation of this production process only is described mainly.
In the process picture sheet of Fig. 8; the formation organic layer forms respectively with the closed substrate of protecting organic layer to avoid the influence of moisture of outside with the TFT substrate of the thin film transistor (TFT) of controlling the electric current that flows to organic layer, and makes up in the closing step of closing step/sealing and curing operation.
In the manufacturing process of the TFT of Fig. 8 substrate, dry-clean with respect to the substrate of being washed.Dry-cleaning also comprises the occasion of utilizing the cleaning that uviolizing carries out.
At first the TFT substrate in dry-cleaning forms TFT.Form passive film and planarization film at TFT, form the lower electrode of organic EL layer thereon.Lower electrode is connected with the drain electrode of TFT.Be the occasion of anode making lower electrode, for example use ITO(Indium Tin Oxide) film.
Then, form organic EL layer at lower electrode.Organic EL layer is made of a plurality of layers.Lower electrode be the sun occasion, for example be hole injection layer, hole transporting layer, luminescent layer, electron supplying layer, electron injecting layer from the bottom up.This organic EL layer utilizes evaporation to form, and forms top electrode layer thereon.Top electrode layer utilizes the manufacture method at the vacuum deposition apparatus described in the embodiment one to seven or organic EL display to form.
Each pixel common land utilizes the β film to form upper electrode on organic EL layer.Be the luminous occasion in top at organic EL display, upper electrode uses IZO(registered trademark, In 2O 3-the transparency electrode such as ZnO) is the luminous occasion in bottom at organic EL display, uses the metallic membranes such as aluminium.
Closed substrate at Fig. 8 drops in the operation, with respect to having carried out the closed substrate configuration siccative of washing with dry-cleaning.Therefore organic EL layer uses siccative in order to remove inner moisture owing to that it(?) can be deteriorated when moisture is arranged.Siccative can use multiple material, but is that top is luminous or the bottom is luminous according to organic EL display, and the collocation method of siccative is different.
TFT substrate and the closed substrate made like this, respectively make up in closing step.The parts that connect airtight that are used for sealing TFT substrate and closed substrate are formed on closed substrate.After having made up closed substrate and TFT substrate, to the sealing irradiation ultraviolet radiation, sealing is solidified, thereby finish sealing.
To the inspection of lighting a lamp of the organic EL display of such formation.Check lighting a lamp, even produce the occasion of the defectives such as stain, white point, also can carry out defect correction and revise, organic EL display is finished.
According to the present invention, owing to can suppress the pollution that is produced by foreign matter and forming at short notice the organic EL layer that forms by a plurality of layers, therefore can reduce the manufacturing cost of organic EL display, improve yield rate.In addition, owing to can correctly control the composition of each layer of organic EL layer, reproducibility that therefore can manufacturing characteristics is high, and the high organic EL display of reliability.
According to the invention of above-described embodiment one to embodiment eight, therefore, even large substrate, also can be only by increasing the evaporation source number of evaporation source row, even size can both be carried out evaporation arbitrarily.In addition, by at a plurality of evaporation source row of the indoor preparation of vacuum evaporation, carry out evaporation with switching, can carry out for a long time work.
But, in above-described embodiment one to embodiment eight, when using metal to be aluminium as evaporation source, according to the vaporization temperature of aluminium high and with the relation of the affinity of aluminium, as in vacuo crucible of configuration, generally use the test tube shape that is called as the K element and at the peristome side trumpet-shaped PBN container made of opening a little.Using the occasion of this trumpet-shaped crucible, from the evaporation scope of the space side of the aluminium that evaporates in the crucible and the steam output change in depth according to the liquid level of the aluminium in from the opening end of crucible to crucible.And as described in the problem to be solved by this invention, the electrode of organic El device uses the possibility of aluminium electrode high, need to guarantee the formation technology of aluminium electrode.As mentioned above, this electrode layer requires low resistance, and is practical for it, importantly uses the electrode layer that can reduce the vacuum evaporation manufacturing specific thickness of the membrane damage of organic layer, thus the working efficiency of raising device and realize cost.In addition, when using vacuum evaporation, because limiting material to the input amount of evaporation with crucible, therefore for the non-stop run of implement device, must improve material supply method and control material feed rate.
Therefore, in following embodiment nine, the liquid level that detects as the aluminium of the evaporation source in the evaporation source is described, supplies with continuously and stably the embodiment of aluminium according to this liquid level.In addition, illustrate the embodiment of tank level control for certain or specified altitude.
(embodiment nine)
Below, an embodiment of use description of drawings evaporation coating device of the present invention.The present embodiment is the example that is applied to the manufacturing of organic El device.In the manufacturing installation of organic El device, form hole injection layer or hole transporting layer, luminescent layer (organic film) at metal electrode layer (anode), formation electron injecting layer or electron supplying layer etc. utilize the thin film layer of multilayer laminated ground of vacuum evaporation multiple material and form under metal electrode layer (negative electrode, upper electrode).In the following description, to form the occasion of metal electrode layer as example at organic film.
Figure 10 is the schematic diagram of an embodiment of evaporation coating device 100.Using evaporation coating device 100 being formed on the occasion that organic film on the substrate 1 forms metal electrode layer (Al electrode layer), the deposited chamber 5 interior configurations under vacuum environment prevent the climbing of aluminium by the evaporation source row 32 that the crucible 14 of a plurality of PBN systems consists of.In addition, maximize owing to having substrate 5, be the occasion of the size about 1800mm * 1500mm, therefore vertical formula configuration.Because corresponding with this large substrate 1,, can shown in the arrow of Figure 10, configure on transverse shifting ground with the angle of regulation a plurality of evaporation source 31a～31e of longitudinal arrangement obliquely at equidirectional.Illustrate that below it is detailed.
Evaporation coating device 100 has substrate 1 and a plurality of evaporation source 31a～31e in deposited chamber 5, gather evaporation source row 32 that these a plurality of evaporation source 31a～31e form, be located at thickness watch-dog (the mould instrumentation mechanism) 7a～7e on each evaporation source 31a～31e.In addition, outside deposited chamber 5, possess and be connected electrically on each thickness watch-dog 7a～7e, be used for the film thickness monitoring meter 8 of control thickness and control folding and unfolding at the evaporation source power supply 9 of the temperature of the evaporating materials of evaporation source 31a～31e, make control that film thickness controller 8 and evaporation source power supply 9 controlled and stored the evaporation data linkedly with computer (control device) 10.
Evaporation source 31a～31e is called as Michel Knuysen element (K element).Each evaporation source 31a～31e has crucible 14 about the thickness 1mm of PBN system, be installed in this PBN system crucible 14 around well heater 11, monitor the temperature of the evaporating materials in crucible 14 or the crucible 14 not shown thermopair, be used for preventing to the not shown heat seal of the heat leak of outside and be used for the not shown water cooled seal part of cooling.
Each thickness watch-dog 7a～7e of the present embodiment has the film thickness gauge that uses quartzy vibrating member, utilizes owing to being attached to the weight of the film on the quartzy vibrating member, sends out the information that vibration frequency descends.Therefore, the injection direction that is used in the cartridge 42 of catching evaporation component and evaporation component in the mode that obtains correct evaporation amount as one man configures.Rear side at cartridge 42 disposes the aperture element 4100 that forms opening.Be provided with one to three cartridge 42 at each thickness watch-dog 7a～7e.In being provided with the thickness watch-dog 7a～7d of a plurality of cartridges 42, except a cartridge 42 at the former configuration shutter 43 of other cartridges 42.
Figure 11 represents to be configured in thickness watch-dog 7a～7e in the deposited chamber 5 and the relation of evaporation source 31a～31e with front view.It is the example that configures obliquely five evaporation source 31a～31e at above-below direction.Evaporation source 31a～31e has as the K element 14a～14e of crucible and well heater 11a～11e.In addition, in Figure 11, utilize the line well heater to represent well heater 11a～11e, but preferably heat equably with planar well heater.
In five thickness watch-dog 7a～7e, as one man be provided with ten film thickness gauge 44a1～44e1.This is because as described in detail later, in the liquid level instrumentation of evaporating materials of the present invention, need at least two film thickness gauges 44 with respect to an evaporation source 31.Therefore, for example identical thickness watch-dog 7a configuration be used for the evaporation thickness of the aluminum that instrumentation sprays from the evaporation source 31a that is positioned at subordinate film thickness gauge 44a1, be used for being positioned at subordinate directly over the film thickness gauge 44a2 of liquid level instrumentation of evaporation source 31b.
At this, in the occasion of the thickness of measuring the vapor-deposited film that the evaporating materials that sprayed by the evaporation source 31a from subordinate forms, use film thickness gauge 44a1, because the instrumentation of this thickness implements constantly, so on film thickness gauge 44a1, do not need shutter.On the other hand, be used for being positioned at subordinate directly over the film thickness gauge 44a2 of liquid level instrumentation of evaporation source 31b because the liquid level instrumentation is not instrumentation but with the instrumentation of specific time interval, therefore shutter 43a2 is set always.That is, the time beyond when instrumentation, be attached in order to reduce vapor-deposited film on the not shown quartzy vibrating member of film thickness gauge 44a2, shutter 43a2 covers the front of the opening end of cartridge 42a2.
Film thickness gauge 44 that be used for to measure the thickness of the vapor-deposited film that the evaporating materials that sprayed by the evaporation source 31b directly over subordinate forms be contained in be positioned at subordinate directly over thickness watch-dog 7b.This thickness watch-dog 7b possesses film thickness gauge 44b2 for the liquid level of the evaporation source 31a of the subordinate of instrumentation at downside, possesses film thickness gauge 44b3 for the liquid level of the evaporation source 31c of instrumentation intermediate stage at upside.
In the same manner as described above, film thickness gauge 44b2,44b3 possess shutter 43b2,43b3 in the front of cylindrical body respectively.The thickness watch-dog 7c of intermediate stage possess the thickness of the vapor-deposited film that main mensuration forms by the injection from the evaporation source 31c of intermediate stage film thickness gauge 44c1, measure from the film thickness gauge 44c2 of the liquid level of the evaporation source 31d of upper several second stage.Film thickness gauge 44c2 possesses shutter 43c2.
Structures identical with the thickness watch-dog 7c of intermediate stage from the thickness watch-dog 7d of upper several second stage, possess the film thickness gauge 44d2 of film thickness gauge 44d1 and the liquid level of the evaporation source 31e that measures higher level of the thickness of the vapor-deposited film that main mensuration origin forms since the injection of the evaporation source 31d of upper several second stage, be provided with shutter 43d2 at film thickness gauge 44d2.
On higher level's thickness watch-dog 7e, only be provided with film thickness gauge 44e1, the main thickness of measuring the vapor-deposited film that is formed by the injection from higher level's evaporation source 31e.Main film thickness gauge 44a1,44b1,44c1,44d1, the 44e1 that measures the thickness of each vapor-deposited film is used for measuring the liquid level of evaporation source 31a～31e.
Then, use Figure 12 to Figure 14 that the liquid level instrumentation of the evaporation coating device of the present invention 100 of such formation is described.When making organic El device, when when organic film forms the aluminium electrode layer, the load when forming electrode layer is not applied on the organic film as far as possible, as above uses like that evaporation.At this, for the AM aluminum metallization electrode layer, no matter whether about 1000 ℃ of the fusing points of aluminum when temperature does not rise to 1400 ℃ of left and right sides, can't form effective vapor-deposited film.Therefore, need aluminum to be remained to the crucible about 1400 ℃, the K element is the most effective crucible now.
In the occasion of using aluminum as electrode materials, the affinity of utilization and aluminium etc. are used PBN now as crucible material.In order to use this K element to carry out as far as possible long evaporation or evaporation to substrate as much as possible, keep deposition material, the K element of wide test tube shape is about 300mm at maximum peristome diameter endways, highly is about 500mm.And, as representative, use the peristome diameter as 100mm about, the K element of height about 200mm.
When using the high K element of such aspect ratio peristome diameter, compare as the occasion of the common crucible of same degree with the ratio that uses peristome diameter and height, from the spray pattern difference of the evaporating materials of peristome injection.That is in the occasion of using the peristome diameter with the existing crucible of highly roughly the same degree, also be roughly the same even level changes spray pattern a little.With respect to this, in the occasion of using the K element, the inventor judges has stronger dependency.
Figure 12 represents an example of the relation of level h and spray pattern 53～55.Take the intersection point of the opening surface 551 of K element 14 and the central shaft 52 of K element 14 as initial point O.Spraying intensity A m is that rotational symmetry distributes.And along with leaving central shaft 52, its size of spraying intensity A m diminishes, in addition, the distribution angle scope rely on evaporating materials (Al material) 13 in the K element 14 from opening surface 551 to liquid level 15 the degree of depth (highly) h and narrowing down.When making when being θ apart from the pitch angle of central shaft 52, be respectively in degree of depth h1, the h2 of distance liquid level 15, h3 at the injection intensity A m of this tiltangleθ
Am=A0COSn1 θ (occasion of Figure 12 (a))
=A0COSn2 θ (occasion of Figure 12 (b))
=A0COSn3 θ (occasion of Figure 12 (c)).At this, n1＜n2＜n3.
Use has the evaporating materials 13 of this spray distribution 53～55, for example changes the angle θ of axle 52 centered by two thickness watch- dogs 71,72 as Figure 12 (b) and configures.That is, the nozzle of evaporation source 31 with respect to central shaft 52 with different angle settings.Be provided with film thickness gauge 441 at thickness watch-dog 71, be provided with film thickness gauge 442 at thickness watch-dog 72.At this moment, if level h is h=h2, then the strength of signal of the quartzy vibrating member of film thickness gauge 441 detections is
M1=A·COSn2θ1。Similarly, the strength of signal of the quartzy vibrating member of film thickness gauge 442 detections is
M2=A·COSn2θ2。Thus, the ratio of M1 and M2
M1/M2=(COS θ 1/COS θ 2) n2=kn2(k is constant), be the function of the multiple n that changes according to the degree of depth h of distance liquid level 15.Therefore, as long as obtain M1, M2 or M1/M2, then obtain the residual quantity in the K element 14 of evaporating materials 13.In addition, proportional according to the known M1/M2 of measured result and level h.
If known the residual quantity in the K element 14, then by supplying with evaporating materials 13 to K element 14 as required, can form the aluminium electrode layer for a long time and to a large amount of substrate 5, in fact, the wear life that can arrive K element 14 forms the vapor-deposited film of aluminium electrode layer always.And, can monitor that liquid level 15 ground supply with solids (granular) or the particulate material of aluminium to K element 14 liquid level 15 is remained certain mode, thereby be certain with the injection Strength retention of evaporating materials 13.
Figure 13 represents other examples of thickness watch-dog 7 with exploded perspective view.In the above-described embodiments, at the cylinder face film thickness gauge 44a1～44e1 of thickness watch-dog 7, but in the present embodiment, at plectane configuration film thickness gauge 44.Figure 13 (a) is the occasion that thickness watch-dog 7 possesses a film thickness gauge 44, and Figure 13 (b) is the occasion that thickness watch-dog 7 possesses two film thickness gauges 44.
Even any occasion is all installed cartridge 42 at the aperture element 4100 that is formed with the corresponding eyelet 45 of the number of film thickness gauge 44.Eyelet 45 is formed on the part near the periphery of discoideus aperture element 4100.With this eyelet 45 cartridge 42 is installed vertically.The occasion that has a plurality of film thickness gauges 44 at thickness watch-dog 7, remaining cartridge 42 is installed obliquely with respect to aperture element 4100.Front at the opening end of the cartridge 42 of installing obliquely can open and close opening end ground installation shutter 43.
Rear side at aperture element 4100 disposes discoideus pedestal 46, is attached with the sensor 47 that possesses a plurality of quartzy vibrating members at the peripheral part of this pedestal 46.Aperture element 4100 forms with one heart with pedestal 46, can change mutually relative position.That is, pedestal 46 can be with respect to aperture element 4100 rotations.The position of sensor 47 when making pedestal 46 rotation with respect to aperture element 4100, be positioned at be formed on aperture element 4100 on the position that overlaps, the position of eyelet 45.
According to the present embodiment, by using a plurality of constitutional diagram 13(a) shown in thickness watch-dog 7 and the thickness watch-dog 7 shown in Figure 13 (b) or Figure 13 (b) shown in thickness watch-dog 7, can implement simultaneously the instrumentation of the liquid level of the instrumentation of the evaporation thickness of evaporation on real estate and K element.
Namely, in the instrumentation of the evaporation thickness of real estate, as long as utilize sensor 47 instrumentations through vertically being installed in cartridge 42 on the aperture element 4100 and the thickness of the vapor-deposited film of evaporation, in the occasion of instrumentation level, if obtain with vertically be installed in aperture element 4100 on the ratio of strength of signal of the strength of signal of sensor 47 corresponding to cartridge 42 sensor 47 corresponding with being installed in sideling cartridge 42 on the aperture element 4100.In addition, only when the strength of signal of sensor 47 corresponding to the cartridge 42 of obtaining and installing sideling, open the shutter 43 that is configured in before the cartridge.Thus, can reduce the amount that is deposited in the vapor-deposited film on the sensor 47 as far as possible.Its reason is, can make pedestal 46 rotations, with the sensor 47 that only is used for the liquid level instrumentation be positioned at perpendicular to position corresponding to the cartridge 42 of aperture element 4100, and be applied to the sensor 47 that determining film thickness is used.
According to the present embodiment, by at a plurality of sensors 47 of a thickness watch-dog 7 configuration, even be deposited in the occasion that the output accuracy of vapor-deposited film thickening on the sensor 47 and sensor 47 descends, also can utilize other sensors 47 to proceed determining film thickness.Effective in the occasion with a plurality of substrates of same batch evaporation.
Figure 14 represents the configuration example of thickness watch-dog 7.This figure (a) is the example that configures each thickness watch-dog 7a～7e with respect to the arrangement axle of the evaporation source 31a～31e that is configured in above-below direction in the place ahead, left side.Not shown substrate 1 is configured in direction in the drawings.Therefore, spray upward evaporated material from each evaporation source 31a～31e.This figure (b) be will be up and down the evaporation source 31a～31e of configuration at the example that the position of each evaporation source 31a～31e changes, in the present example, be mutually saw-tooth arrangement.Even occasion arbitrarily, the evaporation that all is configured in subtend substrate 1 does not have influential position, even and level h increase in the scope of the evaporation that also carries out specified amount.
According to the various embodiments described above, owing to can correctly hold the melting liquid level of the aluminum in the K element 14, therefore can be until the regulation thickness all forms uniform film on substrate.The service limits of the durable limit of K element or film thickness gauge in addition, by setting up not shown evaporating materials feed mechanism, can form electrode layer at a plurality of substrates with same batch, until all can be carried out vapor deposition treatment continuously.Thus, can reduce manufacturing time and the manufacturing cost of organic EL.
In the various embodiments described above, the film thickness gauge of the combination film thickness gauge used of determining film thickness and level gaging special use in level gaging and using, but the peristome with shutter can be set in the side surface part of the cartridge of the film thickness gauge that is used for determining film thickness also, use two adjacent determining film thickness film thickness gauges, only when level gaging, open the shutter of a side film thickness gauge and measure.In this occasion, can reduce the number of film thickness gauge.
In addition, in the various embodiments described above, making evaporating materials is aluminum, but evaporating materials is not limited to this, can use various materials.Certainly, the number of evaporation source is not limited to five yet, can increase and decrease according to the size of substrate.In addition, in the above-described embodiments, make being configured to vertically of substrate, even but horizontal direction also can be applied to the present invention.In this occasion, side configures a plurality of crucibles below substrate, makes evaporating materials towards upper evaporation side.The supply of evaporating materials drops into aluminium solids material or particulate material from the top of crucible when substrate is changed from evaporator room.Other crucibles in addition, use in the above-described embodiments the crucible of K element, but crucible are not defined in the K element, even can obtain identical result yet.But, in the occasion of using the dark crucible of depth ratio opening diameter, this more remarkable effect.
According to embodiment nine, be configured in the film thickness gauge that uses in the vacuum evaporation at two different places, the ratio of the Thickness Variation intensity that detects according to this film thickness gauge detects the liquid level as the aluminium of the evaporation source in the evaporation source, therefore can supply with continuously and stably aluminium according to this liquid level.In addition, can be with tank level control certain or specified altitude.In addition, according to the present invention, owing to when using the evaporation source AM aluminum metallization, utilizing simple method to detect the liquid level of aluminium, therefore can be according to the steam output of the tank level control aluminium of this detection.

Claims (20)

1. evaporation source is characterized in that possessing:
The evaporation source row, it is made of a plurality of evaporation sources of arranging in the vertical, and the part of each evaporation source is opening in order to spray steam, and major axis separately tilts in the same direction with respect to the angle of horizontal direction with regulation; And
A plurality of thickness watch-dogs, it is set to the quantity identical with above-mentioned evaporation source accordingly with each above-mentioned evaporation source, and the thickness from the deposition material of each above-mentioned evaporation source is carried out instrumentation.
2. evaporation source according to claim 1 is characterized in that,
Above-mentioned evaporation source is listed as substrate with respect to vertical formula configuration relatively to carry out an axle at left and right directions and moves.
3. evaporation source according to claim 1 and 2 is characterized in that,
The crucible structure of above-mentioned evaporation source for outlet towards laterally.
4. vacuum deposition apparatus, its substrate with vertical formula placement substrate set up an organization and the evaporation source row, and this vacuum deposition apparatus is characterised in that,
Above-mentioned evaporation source is listed as by a plurality of evaporation sources of arranging in the vertical and consists of, and the part of each evaporation source is opening in order to spray steam, and major axis separately tilts in same direction with respect to the angle of horizontal direction with regulation,
And above-mentioned vacuum deposition apparatus possesses:
A plurality of thickness watch-dogs, it is set to the number identical with above-mentioned evaporation source accordingly with each above-mentioned evaporation source, and the thickness from the deposition material of each above-mentioned evaporation source is carried out instrumentation;
Export the film thickness monitoring meter of control signal according to the thickness of above-mentioned a plurality of thickness watch-dog instrumentations; And
Control the evaporation source power supply of above-mentioned a plurality of evaporation sources according to above-mentioned control signal.
5. vacuum deposition apparatus according to claim 4 is characterized in that,
Standby power supply also is set, and above-mentioned standby power supply is taken into account above-mentioned evaporation source power supply supply power to above-mentioned film thickness monitoring when having a power failure, even also can carry out the temperature control of the crucible of certain hour when having a power failure.
6. according to claim 4 or 5 described vacuum deposition apparatus, it is characterized in that,
Above-mentioned thickness watch-dog has eyelet.
7. vacuum deposition apparatus according to claim 6 is characterized in that,
The above-mentioned eyelet of above-mentioned thickness watch-dog is the eyelet of tubular.
8. vacuum deposition apparatus according to claim 6 is characterized in that,
The internal diameter of above-mentioned eyelet is φ 4～6mm.
9. according to claim 4 or 5 described vacuum deposition apparatus, it is characterized in that,
Have for the material supplying machine that drops into above-mentioned deposition material from oblique upper direction towards above-mentioned evaporation source, the above-mentioned materials supplying machine possesses cooling body in the input port.
10. vacuum deposition apparatus according to claim 6 is characterized in that,
Have for the material supplying machine that drops into above-mentioned deposition material from oblique upper direction towards above-mentioned evaporation source, the above-mentioned materials supplying machine possesses cooling body in the input port.
11. the manufacture method of an organic EL display, the TFT substrate that it utilizes closed substrate sealing to be formed with thin film transistor, organic EL layer and to clip the electrode layer of above-mentioned organic EL layer, the manufacture method of this organic EL display is characterised in that,
Vertical formula configuration is formed with the TFT substrate of thin film transistor in the deposited chamber of vacuum deposition apparatus,
Relatively set evaporation source row with above-mentioned TFT substrate, these evaporation source row have longitudinally configured the evaporation source that a plurality of folding and unfoldings are used for above-mentioned organic EL layer or electrode layer are carried out the deposition material of film forming,
The major axis of above-mentioned evaporation source with respect to horizontal direction with the regulation the angle tilted configuration,
Heat by the crucible to above-mentioned evaporation source, make above-mentioned deposition material evaporation,
By make above-mentioned evaporation source be listed in above-mentioned vertically and movement on the direction vertical with above-mentioned horizontal direction, and on above-mentioned TFT substrate the above-mentioned deposition material of evaporation, thereby form above-mentioned organic EL layer.
12. the manufacture method of organic EL display according to claim 11 is characterized in that,
In above-mentioned deposited chamber, possess for material supplying machine from deposition material to each above-mentioned evaporation source that supply with, the above-mentioned materials supplying machine cools off the input port of above-mentioned deposition material, prevent the obstruction of above-mentioned deposition material, the oblique upper direction from above-mentioned evaporation source under the state of the vacuum state of keeping above-mentioned deposited chamber is supplied with above-mentioned deposition material.
13. an evaporation coating device, its make folding and unfolding in evaporation source evaporating materials evaporation and on the substrate that leaves the evaporation source configuration film forming, this evaporation coating device is characterised in that,
A plurality of mensuration are set from the film thickness gauge of the film forming amount of the evaporating materials of above-mentioned evaporation source evaporation with respect to an evaporation source, this evaporation coating device possesses deposition material amount computing unit, it calculates the amount of the evaporating materials in this evaporation source according to the ratio of the film forming amount of at least two film thickness gauges in these a plurality of film thickness gauges.
14. evaporation coating device according to claim 13 is characterized in that,
Possess a plurality of above-mentioned evaporation sources, the double mensuration of doing of a film thickness gauge in above-mentioned at least two film thickness gauges is from the film thickness gauge of the vapor-deposited film thickness of the evaporating materials of adjacent evaporation source evaporation.
15. according to claim 13 or 14 described evaporation coating devices, it is characterized in that,
Above-mentioned evaporation source possesses the nozzle of ejection evaporating materials, and above-mentioned at least two film thickness gauges with respect to the central shaft of the said nozzle of the evaporation source of the amount of wanting to calculate the evaporating materials in the evaporation source with different angle settings.
16. according to claim 13 or 14 described evaporation coating devices, it is characterized in that,
Above-mentioned film thickness gauge possesses be used to two peristomes that are taken into the evaporating materials of measuring the film forming amount at least, possesses the evaporating materials that prevents from measuring the film forming amount enters film thickness gauge by this peristome closing mechanism at least one of this peristome.
17. evaporation coating device according to claim 16 is characterized in that,
Possess by cartridge at above-mentioned at least two peristomes and to consist of, the evaporating materials that the film forming amount is measured in restriction enters the eyelet of the amount of this peristome.
18. according to claim 13 or 14 described evaporation coating devices, it is characterized in that,
At least a portion of above-mentioned evaporation source is made of pyrolytic boron nitride.
19. according to claim 13 or 14 described evaporation coating devices, it is characterized in that,
Above-mentioned evaporating materials is aluminum.
20. according to claim 13 or 14 described evaporation coating devices, it is characterized in that,
Aforesaid substrate is to comprising that the layer of organic EL layer carries out the substrate of film forming.
CN2013100547875A 2012-03-12 2013-02-20 Evaporation source apparatus, vacuum deposition apparatus, and method of manufacturing organic EL display device Pending CN103305796A (en)

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JP2012-054184 2012-03-12
JP2012079801A JP2013209698A (en) 2012-03-30 2012-03-30 Vapor deposition device
JP2012-079801 2012-03-30

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