WO2013024769A1 - Film formation device and film formation method - Google Patents

Abstract

[Problem] To increase the service life of a quartz resonator used to measure film thickness in a film formation process, and to provide a film formation device and film formation method whereby film thickness can be controlled on the basis of the relationship between the amount of film formation for mixed gas and the amount of film formation for individual material gases when films are formed using a plurality of types of material gases. [Solution] Provided is a film formation device for forming a thin film on a substrate, the film formation device characterized in comprising: a material supply part for supplying a carrier gas and a material gas, the material supply part being capable of decompression; and a head for ejecting the material gas onto the top surface of the substrate; the material supply part and the head being communicated through a material gas supply channel; a branched flow channel for branching from the material gas supply channel being provided to the material gas supply channel; and a measurement device for measuring the amount of film formation of the material gas being connected to the branched flow channel.

Description

Film forming apparatus and film forming method

The present invention relates to a film forming apparatus and a film forming method used for forming a light emitting layer in the manufacture of an organic EL element, for example.

In recent years, organic EL elements using electroluminescence (EL) have been developed. Since organic EL elements emit light by themselves, they have advantages such as an excellent viewing angle compared to liquid crystal displays (LCDs) and the like, and future development is expected.

The most basic structure of this organic EL element is a sandwich structure in which an anode (anode) layer, a light emitting layer and a cathode (cathode) layer are formed on a glass substrate. In order to extract light from the light emitting layer to the outside, a transparent electrode made of ITO (Indium Tin Oxide) is used for the anode layer on the glass substrate. Such an organic EL element is manufactured by sequentially forming a light emitting layer and a cathode layer on a glass substrate on which an ITO layer (anode layer) is formed in advance, and further forming a sealing film layer. Is common.

Generally, the light-emitting layer is formed in the organic EL element as described above in a vapor deposition apparatus. The film thickness of the light emitting layer or the like in the vapor deposition apparatus needs to be controlled to a predetermined film thickness from the viewpoint of light emission efficiency and the like, and a film thickness control technique has been devised conventionally.

As a film thickness control technique, for example, the film thickness measurement method described in Patent Document 1 is used to measure the film thickness using a crystal oscillator for measurement, and the film thickness of the film formed on the crystal oscillator There is known a technique for calculating the relationship between the thickness of a film actually formed on a substrate and controlling the thickness of the film formed on the substrate.

JP 2008-122200 A

However, when the measurement crystal resonator is provided in the vicinity of the substrate, for example, as in the film thickness measurement method described in Patent Document 1, the measurement is performed by depositing a film forming material on the crystal resonator. However, there is a problem that the deposition accuracy on the quartz crystal unit advances and the measurement accuracy deteriorates. In other words, the measurement crystal unit has a device lifetime, and as the film thickness deposited on the measurement crystal unit increases, the film thickness deposited on the substrate cannot be accurately reproduced, and the measurement reliability May change over time. As a result, for example, it is necessary to frequently replace the crystal resonator in accordance with a predetermined number of times of measurement, and there is a problem in that efficient film thickness measurement cannot be performed.

In addition, when film formation on a substrate is performed by vapor deposition of a plurality of types of material gases, the above-described conventional film thickness control method can calculate the film formation rate in a mixed gas in which a plurality of types of gases are mixed. However, since the film formation rate of each material gas before mixing cannot be calculated, there is a problem that film thickness measurement and film thickness control cannot be performed with high accuracy.

Therefore, in view of the above problems, an object of the present invention is to extend the life of a crystal resonator used for film thickness measurement in a film formation process. Further, when film formation is performed using a plurality of types of material gases, film thickness control can be performed based on the relationship between the film formation amount for each material gas and the film formation amount for a mixed gas. An apparatus and a film forming method are provided.

In order to achieve the above object, according to the present invention, there is provided a film forming apparatus for forming a thin film on a substrate, a depressurizable material supplying part for supplying a carrier gas and a material gas, and a material on the upper surface of the substrate. A head for injecting gas, and the material supply unit and the head communicate with each other via a material gas supply path, and the material gas supply path is provided with a branch flow path branched from the material gas supply path, A film forming apparatus is provided in which a measuring device for measuring a film forming amount of the material gas is connected to the branch flow path.

In the film forming apparatus, a control valve for controlling the supply of the carrier gas and the material gas from the material supply unit may be provided in the material gas supply channel and the branch channel. In addition, the measurement apparatus may include a crystal resonator for measuring a film thickness and a shutter for controlling the injection of the material gas to the crystal resonator.

The head, the branch channel, and the measuring device may be arranged in the same chamber heated to a predetermined temperature. In addition, a plurality of the material supply units are provided, a different material gas supply path is provided for each material supply unit, and the measurement device is connected to each of the plurality of branch flow paths branched from the different material gas supply paths. It may be. In addition, a plurality of the material supply units are provided, a different material gas supply path is provided for each of the material supply units, and one measurement device that is common to a plurality of branch flow paths branched from the different material gas supply paths May be connected.

A carrier gas introduction mechanism that introduces a carrier gas to the material gas supply path via a carrier gas introduction path may be provided. Further, a plurality of the material supply parts are provided, a different material gas supply path is provided for each material supply part, and a common supply path to which the different material gas supply paths are connected is provided, branching from the different material gas supply paths Each of the plurality of branch channels may be connected to the measuring device, and may be provided with a carrier gas introduction mechanism that introduces a carrier gas to the common supply channel via a carrier gas introduction channel.

According to another aspect of the present invention, there is provided a thin film deposition method for controlling a film thickness based on a relationship between a deposition rate on a substrate and a deposition rate on a deposition material supply unit. When the flow rate of the film forming material gas supplied from the supply unit is a predetermined value or less, in addition to the film forming material gas, a carrier gas not containing the film forming material gas is supplied to form a film with a flow rate equal to or higher than the predetermined value. A film forming method is provided. In this film forming method, there are a plurality of types of film forming material gases, and the total of the supply amounts of the plurality of types of film forming material gases and the supply amount of the carrier gas not including the film forming material gases are constant. A film may be formed.

According to the present invention, it is possible to extend the life of a crystal resonator used for film thickness measurement in a film forming process. Further, when film formation is performed using a plurality of types of material gases, film thickness control can be performed based on the relationship between the film formation amount for each material gas and the film formation amount for a mixed gas. An apparatus and a film formation method can be provided.

It is side surface sectional drawing of the film-forming apparatus concerning embodiment of this invention. It is explanatory drawing of the manufacturing process of an organic EL element. It is explanatory drawing which shows the flow of the gas in the case of flowing material gas only to a measuring apparatus. It is explanatory drawing which shows the flow of the gas in the case of flowing material gas only to a head. It is explanatory drawing which shows the flow of gas when flowing material gas into a measuring apparatus and a head. It is a schematic explanatory drawing of the film-forming apparatus concerning the 2nd Embodiment of this invention. It is a schematic explanatory drawing of the film-forming apparatus concerning the 3rd Embodiment of this invention. It is the schematic which shows an example of the shape of a shutter. It is a schematic explanatory drawing of the film-forming apparatus which provided the shielding board in the suitable position. It is a schematic explanatory drawing of the film-forming apparatus which provided the exhaust line in the suitable position. It is a schematic explanatory drawing of the film-forming apparatus of the structure which provided the crystal oscillator in the board | substrate vicinity. 4 is a graph showing a relationship between a carrier gas flow rate and a ratio between a film formation amount of a crystal resonator in the vicinity of a head and a film formation amount of a crystal resonator in a material gas supply path. It is a schematic explanatory drawing of the film-forming apparatus of the structure which provided the carrier gas introduction path concerning the 4th Embodiment of this invention. When a carrier gas not containing a material gas is supplied at a rate of 5 sccm from the carrier gas introduction mechanism, the flow rate of the carrier gas flowing in the material supply mechanism, the film formation amount of the crystal unit near the head, and the material gas supply path It is a graph which shows the relationship with the ratio with the film-forming amount of a crystal oscillator. It is a schematic explanatory drawing of the film-forming apparatus concerning the 5th Embodiment of this invention. It is a schematic explanatory drawing of the film-forming apparatus concerning the 6th Embodiment of this invention.

DESCRIPTION OF SYMBOLS 1,100,200,300,300a, 350,350 '... Film-forming apparatus 10 ... Processing chamber 12 ... Substrate holding stand 20 ... Head 21 ... Opening surface 22 ... Exhaust pipe 23 ... Vacuum pump 30, 31 ... Material supply mechanism 40 , 41 ... Material gas supply path 42 ... Exhaust line 43, 47 ... Flow path 45, 49, 321 ... Carrier gas introduction mechanism 50, 51, 220, 221 ... Branch flow path 60, 61, 101, 212, 213 ... Measuring device 65,215,216,315 ... crystal resonator 66 ... shutter 202, 203 ... gate valves 230 and 231 ... shutter 235 ... hole 240 ... exhaust path 250 ... _{N 2} gas supply unit 252 ... _{N 2} gas supply channel 255 ... shield Plate 260 ... Exhaust line 310 ... Optical detection device 312, 313 ... Transmission window 320 ... Carrier gas introduction path 352 ... Common Supply path V1 ~ V11 ... control valve G ... substrate

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the present specification and drawings, components having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted. In the following embodiments, a case where an organic EL element is manufactured using an organic material (hereinafter also simply referred to as a material) will be described as an example.

(First embodiment)
Hereinafter, as a first embodiment of the present invention, for example, a film forming apparatus 1 used in a light emitting layer deposition process (film forming process) in a manufacturing process of an organic EL element will be described with reference to the drawings. FIG. 1 is a side sectional view of the film forming apparatus 1. In addition, when performing the vapor deposition process using organic material gas (henceforth only material gas), the vapor deposition head which ejects organic material gas to the board | substrate G is a hole transport layer, a non-light-emitting layer (electronic block), for example Layer), blue light-emitting layer, red light-emitting layer, green light-emitting layer, and electron transport layer may be prepared in plural, but in this embodiment, there are two kinds of material gases A description will be given by taking as an example a film forming apparatus in which only one vapor deposition head is provided, two kinds of material gases are mixed in the vapor deposition head, and the mixed gas is jetted onto the substrate.

As shown in FIG. 1, the film forming apparatus 1 includes a processing chamber 10 for performing a film forming process for the substrate G. The inside of the processing chamber 10 is heated to a predetermined temperature by a heater (not shown). A substrate holding table 12 that holds the substrate G is provided below the inside of the processing chamber 10, and the substrate G is, for example, electrostatic in a state in which the film formation target surface faces upward (in a face-up state) during the film formation process. It is held on the substrate holding table 12 by a method such as chucking. In addition, a head 20 that ejects organic material gas is installed in the vicinity of the upper side of the substrate holding table 12, and the substrate 20 in a state where the opening surface (material gas ejection surface) 21 of the head 20 is held by the substrate holding table 12. The structure is such that it faces the G upper surface (film formation target surface). Further, the inside of the processing chamber 10 communicates with a vacuum pump 23 through an exhaust pipe 22 and is evacuated when measuring a film forming rate or during a film forming process.

Further, as shown in FIG. 1, in the processing chamber 10, there are material supply mechanisms 30 and 31 as a material supply unit that vaporizes an organic material by heating and supplies a material gas vaporized by a carrier gas to the head 20. Is provided. In the film forming apparatus 1 according to the present embodiment, two material supply mechanisms 30 and 31 are provided, and each material supply mechanism supplies a first material gas and a second material gas.

The material supply mechanism 30 and the head 20 communicate with each other via a material gas supply path 40. The material supply mechanism 30 is provided with a heater (not shown) for heating the organic material inside, and the organic material gas (first material gas) heated and generated (vaporized) in the material supply mechanism 30 is the material gas. It is introduced into the head 20 via the supply path 40. Further, an openable / closable exhaust line 42 is provided in the middle of the material gas supply path 40 so that the material gas or the like staying in the material gas supply path 40 can be exhausted.

On the other hand, the material supply mechanism 30 is connected to a carrier gas introduction mechanism 45 that allows a carrier gas, for example, argon gas, to flow into the material supply mechanism 30 via the flow path 43, and the carrier gas that has flowed in from the carrier gas introduction mechanism 45. The material gas generated in the material supply mechanism 30 by the flow of the gas flows to the material gas supply path 40. The inflow of the carrier gas from the carrier gas introduction mechanism 45 to the material supply mechanism 30 is controlled by opening / closing a control valve V1 provided on the flow path 43.

Similarly, the material supply mechanism 31 and the head 20 communicate with each other via a material gas supply path 41. The material supply mechanism 31 is provided with a heater (not shown) for heating the organic material inside, and the organic material gas (second material gas) heated and generated (vaporized) in the material supply mechanism 31 is the material gas. It is introduced into the head 20 via the supply path 41. Further, in the middle of the material gas supply path 41, an openable / closable exhaust line 42 is provided in the same manner as the material gas supply path 40, and the material gas and the like remaining in the material gas supply path 40 are exhausted. The configuration is possible.

On the other hand, the material supply mechanism 31 is connected to a carrier gas introduction mechanism 49 that allows a carrier gas, for example, argon gas, to flow into the material supply mechanism 31 via the flow path 47, and the carrier gas that has flowed in from the carrier gas introduction mechanism 49. The material gas generated in the material supply mechanism 31 due to the flow of the gas flows to the material gas supply path 41. The inflow of the carrier gas from the carrier gas introduction mechanism 49 to the material supply mechanism 31 is controlled by opening and closing a control valve V2 provided on the flow path 47.

The first material gas and the second material gas introduced into the head 20 through the material gas supply path 40 and the material gas supply path 41 are mixed in the head 20 to become a mixed gas, and the mixed gas is transferred from the opening surface 21 to the substrate. G is sprayed to form a film.

Further, the material gas supply path 40 is provided with a branch flow path 50 that branches in the middle of the material gas supply path 40, and the branch flow path 50 is connected to the measuring device 60. Here, a control valve V3 for controlling the introduction of the first material gas to the head 20 is provided in the vicinity of the head side of the material gas supply path 40, and the branch material flow path 50 is connected to the first material gas measuring device 60. A control valve V4 for controlling the introduction is provided. That is, when the first material gas flowing from the material supply mechanism 30 is introduced only into the head 20 by suitably controlling the control valves V3 and V4, the head 20 and the measuring device 60 are introduced. It is the structure which can switch the case where it introduces to both.

Similarly, the material gas supply channel 41 is provided with a branch channel 51 that branches in the middle of the material gas supply channel 41, and the branch channel 51 is connected to the measuring device 61. Here, a control valve V5 for controlling the introduction of the second material gas into the head 20 is provided in the vicinity of the head side of the material gas supply path 41, and the branch material channel 51 is connected to the second material gas measuring device 61. A control valve V6 for controlling the introduction is provided. That is, by appropriately controlling the control valves V5 and V6, the second material gas flowing from the material supply mechanism 31 is introduced only into the head 20, the case where only the measurement device 61 is introduced, and the head 20 and the measurement device 61. It is the structure which can switch the case where it introduces to both.

The measuring device 60 and the measuring device 61 have the same configuration, and have a crystal resonator 65 and a shutter 66. The shutter 66 is configured to be openable and closable. When a material gas (first material gas, second material gas) is introduced from the branch flow paths 50 and 51 in a state where the shutter 66 is opened, the material gas is measured. It is injected into the internal crystal unit 65. By comparing the film thickness of the thin film formed on the crystal resonator 65 with the film thickness of the thin film formed on the substrate G under the same conditions, the film formation rate of the material gas is calculated. Since a large amount of material gas is not required to be deposited on the crystal unit 65, the amount of material gas introduced into the measuring devices 60 and 61 may be extremely small, and the branch flow paths 50 and 51 have a cross-sectional area. It is preferable that the piping is small.

In the film forming apparatus 1 configured as described above with reference to FIG. 1, a thin film is formed on the substrate G. FIG. 2 is an explanatory diagram of the manufacturing process of the organic EL element A manufactured by various film forming apparatuses including the film forming apparatus 1 according to the embodiment of the present invention. First, as shown in FIG. 2A, a substrate G having an anode (anode) layer 70 formed thereon is prepared. The substrate G is made of a transparent material made of, for example, glass. The anode layer 70 is made of a transparent conductive material such as ITO (Indium Tin Oxide). The anode layer 70 is formed on the upper surface of the substrate G, for example, by sputtering.

And as shown to Fig.2 (a), the light emitting layer (organic layer) 71 is formed into a film by the vapor deposition method on the anode layer 70. FIG. The film forming apparatus 1 according to the present embodiment is used, for example, when the light emitting layer 71 is formed by vapor deposition. The light emitting layer 71 has, for example, a multilayer structure in which a hole transport layer, a non-light emitting layer (electron block layer), a blue light emitting layer, a red light emitting layer, a green light emitting layer, and an electron transport layer are stacked.

Next, as shown in FIG. 2B, a cathode (cathode) layer 72 made of, for example, Ag, Al, or the like is formed on the light emitting layer 71 by, for example, sputtering using a mask.

Next, as shown in FIG. 2C, the light emitting layer 71 is patterned by, for example, dry etching the light emitting layer 71 using the cathode layer 72 as a mask.

Next, as shown in FIG. 2D, an insulating sealing film layer made of, for example, silicon nitride (SiN) so as to cover the periphery of the light emitting layer 71 and the cathode layer 72 and the exposed portion of the anode layer 70. 73 is deposited. The sealing film layer 73 is formed by, for example, a μ wave plasma CVD method.

Thus, the manufactured organic EL element A can make the light emitting layer 71 emit light by applying a voltage between the anode layer 70 and the cathode layer 72. Such an organic EL element A can be applied to a display device and a surface light emitting element (illumination, light source, etc.), and can be used for various other electronic devices.

For example, when the light emitting layer 71 shown in FIG. 2A is formed by the vapor deposition method using the film forming apparatus 1 according to this embodiment, the film thickness control of the formed thin film is performed by the measuring apparatuses 60 and 61. This is performed based on the relationship between the film formation amount calculated by the measurement and the film thickness of the thin film formed on the substrate. Therefore, hereinafter, the measurement performed in the film forming apparatus 1 shown in FIG. 1 will be described.

First, in order to calculate the individual film formation amounts of the first material gas and the second material gas, the control valves V1, V2, V4, and V6 are opened while the control valves V3 and V5 are closed, and film formation is performed. The first material gas is caused to flow through the material gas supply path 40 and the second material gas is caused to flow through the material gas supply path 41 with the same flow rate and flow speed as the flow rate and flow speed that are sometimes flowed. FIG. 3 is an explanatory diagram showing the gas flow in this case. In the state shown in FIG. 3, each material gas is flowed, and the first material gas and the second material gas are introduced into the measuring devices 60 and 61, respectively. At this time, the shutters 66 in the measuring devices 60 and 61 are opened, and film formation is performed on the crystal resonator 65 using only the first material gas and the second material gas, respectively. Since film formation on the crystal unit 65 is preferably minimal from the viewpoint of the life of the apparatus, it is desirable that the shutter 66 is appropriately opened and closed. For example, only when measurement as shown in FIG. 3 is performed. It is desirable to open the shutter 66 and close the shutter 66 as soon as possible after the measurement is completed.

Next, the control valves V 1, V 2, V 3, V 5 are opened, the control valves V 4, V 6 are closed, and the material gas supply passage 40 is connected to the material gas supply path 40 with the same flow rate and flow velocity as those measured by the measuring devices 60, 61. 1 material gas is flowed and 2nd material gas is flowed to the material gas supply path 41. FIG. 4 is an explanatory diagram showing the gas flow in this case. As shown in FIG. 4, both the first material gas and the second material gas are introduced into the head 20, mixed in the head 20 (mixed gas), and then sprayed from the opening surface 21 onto the upper surface of the substrate G. Is done. That is, the film forming process for the substrate G is performed using two kinds of material gases (first material gas and second material gas).

Here, in the case where the film formation with the mixed gas is actually performed on the substrate G shown in FIG. 4 and the case where the measurement is performed by the measuring devices 60 and 61 shown in FIG. The flow rate and flow velocity of the first material gas and the second material gas are the same. For this reason, the measurement results in the measuring devices 60 and 61, that is, the film formation amounts of the respective materials with respect to the crystal unit 65 and the respective material gases are introduced into the head 20, and the film formation is performed on the substrate G. A relationship with the film formation amount can be obtained.

Based on the obtained relationship, the flow rate and flow rate of each material gas necessary for forming a thin film with a predetermined thickness on the substrate G are determined, and the thin film with a desired thickness is placed on the substrate G. It is possible to form a film (film thickness control).

As described above, it is possible to accurately control the film thickness during film formation on the substrate G by the method described with reference to FIGS. That is, when a film is formed on a substrate with a mixed gas obtained by mixing a plurality of material gases (in this embodiment, two types), a crystal resonator is used for each material gas before being mixed. Measurements are made, and the relationship between the measurement results obtained for each material gas and the film thickness when the film is actually formed on the substrate with a mixed gas is calculated, enabling precise film thickness control Become. In addition, since the crystal resonators that have been placed in the vicinity of the substrate for the conventional film thickness control are respectively placed in the measuring devices connected to the branch flow paths through which each material gas flows individually, The amount of the material gas deposited can be suppressed as compared with the conventional case, and the life of the apparatus can be extended. Here, in the case where the branch flow path is an extremely thin pipe compared to the material gas supply path, the life of the crystal unit can be ensured more reliably.

The example of the embodiment of the present invention (the first embodiment) has been described above, but the present invention is not limited to the illustrated embodiment. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood. For example, in the first embodiment, the film forming process in which the organic material is formed on the substrate by vapor deposition has been described as an example. However, the present invention also applies when the film forming process is performed using an inorganic material gas. Applicable.

In the film forming apparatus 1 according to the first embodiment, the material supply mechanism, the head, and the measuring apparatus are arranged in the same processing chamber, but separate chambers for storing the respective apparatuses. It is also possible to connect the plurality of chambers by piping. In addition, when three or more kinds of material gases are mixed and a film forming process is performed on the substrate, it is obvious that the effect of the present invention can be obtained by providing a measuring device corresponding to each material gas.

In the first embodiment, the case where each material gas is introduced into the measuring devices 60 and 61 (shown in FIG. 3) and the case where the material gas is introduced into the head 20 (shown in FIG. 4) are performed. However, the present invention is not limited to this. For example, each material gas is introduced into the measuring devices 60 and 61 and at the same time, each material gas is also introduced into the head 20 to perform the film formation process on the substrate G and calculate the film formation amount and the film formation rate. Is possible.

FIG. 5 is an explanatory diagram showing the gas flow when the material gas is introduced into the measuring devices 60 and 61 and also into the head 20. As shown in FIG. 5, when the material gas is introduced into the measuring devices 60 and 61 and simultaneously into the head 20, the material gas is allowed to flow with all the control valves V1 to V6 being opened.

In this way, by simultaneously introducing the material gas into both the measuring devices 60 and 61 and the head 20, it is possible to calculate the deposition amount and deposition rate without interrupting the deposition process on the substrate G. Thus, the film thickness is efficiently controlled.

(Second Embodiment)
In the first embodiment, when two kinds of material gases are used for the film forming process, the two measuring devices for measuring each gas are divided into the branch flow paths branched from the material gas supply paths of the respective material gases. Although it is assumed that they are connected, it is also possible to connect only one measuring device to be disposed in the processing chamber and connect each branch channel to one common measuring device.

FIG. 6 is a schematic explanatory diagram of a film forming apparatus 100 according to the second embodiment of the present invention when only one measuring apparatus is provided. In FIG. 6, the same components as those in the above embodiment are denoted by the same reference numerals, and the description thereof is omitted. FIG. 6 shows an example in which all the control valves (V1 to V6) are opened. However, during the measurement for calculating the film formation amount and the film formation rate, each control valve is opened and closed. It is preferably controlled.

As shown in FIG. 6, in the film forming apparatus 100, the branch channel 50 and the branch channel 51 are connected to one common measuring device 101. In this case, for example, only the first material gas (including argon gas) is introduced into the measuring apparatus 101 by opening only the control valves V1, V4 and closing the control valves V2, V3, V5, V6. Then, measurement is performed with a crystal resonator, and then only the control valves V2, V6 are opened, and the control valves V1, V3, V4, V5 are closed to introduce only the second material gas into the measurement apparatus 101. As in the case of performing measurement, a single measurement device 101 can be used to measure a plurality (here, two types) of material gases.

In other words, since only one measuring apparatus 101 is used to measure each of a plurality of types of material gases using a crystal resonator, and the measurement results regarding the film formation amount and film formation rate can be obtained with high accuracy, Although the life of the vibrator is inferior to that of the above-described embodiment, it is more advantageous in terms of apparatus cost than the case described in the above-described embodiment.

(Third embodiment)
In the first embodiment, the case where one measuring device 60, 61 is provided for each branch channel 50, 51 has been illustrated and described. For example, the same material gas is measured. It is also possible to use two measuring devices provided outside the processing chamber. Therefore, in the following, as a third embodiment of the present invention, a case where two measuring devices for measuring the same material gas are provided will be described with reference to FIG. In addition, in the film forming apparatus 200 according to another embodiment shown in FIG. 7, the constituent elements other than the configuration of the measuring apparatus are the same as those in the above embodiment, and thus the same reference numerals are given and the description thereof is omitted. To do.

FIG. 7 is a schematic explanatory view of a film forming apparatus 200 according to another embodiment of the present invention. Note that in FIG. 7, the case where the film formation apparatus 200 performs film formation using one kind of material gas is described. However, the invention according to another embodiment described here is not limited thereto, and The present invention can also be applied when two kinds of material gases are used as in the embodiment.

As shown in FIG. 7, in the film forming apparatus 200, a measuring device 212 is provided outside the processing chamber 10 via a gate valve 202, and a measuring device 213 is provided via a gate valve 203. Further, two branch flow paths 220 and 221 branching in the middle of the material gas supply path 40 are provided. The branch flow path 220 opens toward the gate valve 202, and the branch flow path 221 faces the gate valve 203. Open. A shutter 230 that can be opened and closed is provided between the opening 220 a of the branch flow path 220 and the gate valve 202, and a shutter 231 that can be opened and closed between the opening 221 a of the branch flow path 221 and the gate valve 203. Is provided. That is, the material gas ejected from the branch flow paths 220 and 221 does not reach the measuring devices 212 and 213 when the shutters 230 and 231 are closed, and the shutters 230 and 231 and the gate valves 202 and 203 are opened. And only when the shutters 230 and 231 are opened, the inside of the measuring devices 212 and 213 is reached. The diameters of the branch flow paths 220 and 221 are preferably less than 8.5% of the diameter of the material gas supply path 40.

When the shutters 230 and 231 are closed, the material gas ejected from the branch passages 220 and 221 is prevented from adhering to the gate valves 202 and 203 to cause a device failure. It is preferable that the shutters 230 and 231 have a shape that can efficiently prevent the reflection of the ejected material gas. FIG. 8 is a schematic view showing an example of the shape of the shutters 230 and 231. As shown in FIG. 8, the shape of the shutters 230 and 231 is a shape provided with a plurality of holes 235 that open in the direction in which the material gas is ejected. In the shutter 230 (231) shown in FIG. 8, the material particles in the material gas ejected toward the shutter 230 (231) enter the hole 235 as shown by the broken line in FIG. The reflection of the material gas (material particles) on the shutter surface is prevented. That is, scattering of the material gas (material particles) reflected in the processing chamber 10 is suppressed, and the occurrence of a device failure or the like is avoided.

On the other hand, crystal resonators 215 and 216 are arranged inside the measuring devices 212 and 213, respectively. These crystal resonators 215 and 216 are arranged so as to be taken out of the apparatus. In addition, the measuring devices 212 and 213 are provided with an exhaust passage 240 that communicates with both internal spaces and that is evacuated by a vacuum pump (not shown). The exhaust passage 240 is branched into an exhaust pipe 240a communicating with the measuring device 212 and an exhaust pipe 240b communicating with the measuring device 213. The exhaust pipe 240a and the exhaust pipe 240b are provided with control valves V7 and V8, respectively. ing. Exhaust (evacuation) inside the measuring devices 212 and 213 can be controlled by opening and closing the control valves V7 and V8.

In addition, the measuring devices 212 and 213 are provided with an N ₂ gas supply path 252 communicating with the N ₂ gas supply unit 250 for purging the N ₂ gas in both. The N ₂ gas supply path 252 branches into an N ₂ gas supply pipe 252a and a measurement apparatus 252b communicating with the measurement device 212, and a control valve is provided for each of the N ₂ gas supply pipe 252a and the N ₂ gas supply pipe 252b. V9 and V10 are provided. The supply of N ₂ gas into the measuring devices 212 and 213 is controlled by opening and closing the control valves V9 and V10.

In the film forming apparatus 200 configured as described above with reference to FIG. 7, as described below, the measurement of the material gas in the film thickness control at the time of film formation is performed by the crystal resonator. As in the above embodiment, the material gas is supplied from the material supply mechanism 30 to the head 20 via the material gas supply path 40 during film formation, but in this embodiment, a branch flow flows along the material gas supply path 40. Since the paths 220 and 221 are provided, a part of the material gas flowing through the material gas supply path 40 is ejected from the opening 220a of the branch flow path 220 and the opening 221a of the branch flow path 221 during film formation. ing.

Here, in order to control the film thickness during film formation, when the film formation rate is measured by the material gas by the measurement device 212, the inside of the measurement device 212 is set in a reduced pressure state (vacuum state), and the gate valve 202 and the shutter 230 are placed. Is opened so that the gas ejected from the branch flow path 220 (opening 220a) flows into the measuring device 212. Then, the material gas is injected into the crystal resonator 215 inside the measuring device 212. By comparing the film thickness of the thin film formed on the crystal resonator 215 with the film thickness of the thin film formed on the substrate G, the film formation rate of the material gas is calculated.

Further, in the measurement of the film forming rate by the measuring device 212, the differential pressure between the internal pressure P1 of the branch flow path 220 and the internal pressure P2 of the measuring device 212 is set to the internal pressure of the head 20 (particularly the internal pressure near the opening surface 21) and the substrate. It is preferable to approach (equalize) the differential pressure with the internal pressure on the upper surface of G. Furthermore, it is preferable that the distance between the opening 220a of the branch flow path 220 and the crystal resonator 215 in the measuring device 212 is equal to the distance between the opening surface 21 of the head 20 and the substrate G. This is because the film formation rate of the material gas is calculated by comparing the film thickness of the thin film formed on the crystal resonator 215 with the film thickness of the thin film formed on the substrate G. This is because it is preferable to make the film forming conditions closer. Note that the same method is used when the film formation rate is measured by the measurement device 213.

On the other hand, it may not be necessary to measure the film formation rate during stable operation such as when film formation is performed stably. In such a case, the shutters 230 and 231 are closed, and the gate valves 202 and 203 are further closed so that the material gas does not flow into the measuring devices 212 and 213. That is, the inside of the processing chamber 10 and the inside of the measuring devices 212 and 213 are spatially separated.

In addition, the measurement by the crystal resonators 215 and 216 disposed in the measuring devices 212 and 213 is to measure the frequency of the resonator that fluctuates due to the material deposited by the adhesion of the material gas on the resonator. However, if a large amount of material is deposited on the vibrator, the measurement accuracy deteriorates. Therefore, it is necessary for the measuring devices 212 and 213 to periodically take out the crystal resonator and replace it or clean it with hot gas or the like. In general, in order to maintain the measurement accuracy of the crystal resonator, it is preferable to replace and clean at the stage where the frequency of the resonator during measurement is reduced by about 1%.

For example, when the crystal resonator 215 in the measuring device 212 is taken out, the shutter 230 and the gate valve 202 are closed, and the control valve V7 is closed. In this state, the control valve V9 is opened, and the measuring apparatus 212 is purged with N ₂ gas. Then, when the internal pressure in the measuring device 212 reaches about atmospheric pressure, for example, the crystal resonator 215 is taken out from a take-out port provided in the measuring device 212 or the like. Even when the operation of taking out the crystal resonator 215 in the measurement apparatus 212 is performed as described above, the measurement apparatus 213 can appropriately measure the film formation rate.

Similarly to the measurement device 212, when the crystal resonator 216 in the measurement device 213 is taken out, the shutter 231 and the gate valve 203 are closed, the control valve V8 is closed, and the control valve V10 is turned on. This is done by opening and purging N ₂ gas into the measuring device 213. Even when the operation for taking out the crystal resonator 216 in the measurement apparatus 213 is performed as described above, the measurement apparatus 212 can appropriately measure the film formation rate.

That is, while the film forming process is being performed in the film forming apparatus 200 according to this embodiment, the film forming rate is measured simultaneously with either the measuring apparatus 212 or the measuring apparatus 213. In the other measuring apparatus that is not present, the quartz vibrator can be replaced and cleaned.

As described above, in the film forming apparatus 200 shown in FIG. 7, since the film forming rate is measured by the measuring apparatuses 212 and 213 simultaneously with the film forming process on the substrate G, precise film thickness control is performed. It is possible. In addition, since the processing chamber 10 and the measuring devices 212 and 213 can be spatially separated, when the measurement accuracy of the measuring device is deteriorated, the entire film forming device 200 is stopped and cooled and opened to the atmosphere. It is possible to replace and clean the crystal unit in the measuring device without performing it. That is, since the crystal unit is exchanged and cleaned while the film formation process is performed, the throughput of the entire apparatus can be improved.

Furthermore, by providing two measuring devices (for example, measuring devices 212 and 213 in FIG. 7) to measure the film forming rate of the same (one type) material gas, one measuring device (for example, the measuring device) is provided. 212) Even when the measurement accuracy of the crystal resonator in the inside deteriorates, the measurement of the film forming rate is continued by the other measuring device (for example, the measuring device 213), and the inside of the one measuring device (the measuring device 212) is continued. The quartz crystal can be removed and replaced or cleaned. In other words, it is possible to replace and clean the crystal unit in the measuring apparatus while performing the film forming process while maintaining the highly accurate film thickness control. In the case where only one measuring device is provided, the film forming rate cannot be measured at the time of exchanging and cleaning the crystal unit, so the film forming process has to be stopped. In the film forming apparatus, while the film forming rate is measured while the film forming process is being performed, the crystal unit in the measuring apparatus that is not performing the measurement is replaced and washed, so that it is precise and efficient. Film forming process is realized.

In the film forming apparatus 200 according to the present embodiment, the shielding plate 255 is provided to prevent the material gas ejected from the branch flow path 220 and the material gas ejected from the branch flow path 221 from affecting each other. It can also be provided. FIG. 9 is a schematic explanatory diagram of a film forming apparatus 200 in which a shielding plate 255 is provided at a suitable position. As shown in FIG. 9, the shielding plates 255 are provided at, for example, three locations between the shutter 230 and the shutter 231, the side portion of the shutter 230 (head 20 side) and the side portion of the shutter 231 (material supply mechanism 30 side). It is done. By providing the shielding plate 255, the material gas ejected from the branch flow path 220 and the material gas ejected from the branch flow path 221 are prevented from affecting each other, and further ejected from the branch flow paths 220 and 221. Thus, the material gas is prevented from being scattered in the processing chamber 10 and causing an apparatus failure or the like.

Furthermore, in the film forming apparatus 200, an exhaust line 260 for preventing the material gas ejected from the branch flow paths 220 and 221 from scattering into the processing chamber 10 can be provided. FIG. 10 is a schematic explanatory view of a film forming apparatus 200 provided with an exhaust line 260 at a suitable position. As shown in FIG. 10, the exhaust line 260 is provided in the vicinity of the gate valve 202, for example, and communicates with an exhaust device such as a vacuum pump (not shown). By providing the exhaust line 260, it is possible to exhaust the material gas ejected from the branch flow paths 220 and 221 that may be scattered in the processing chamber 10, and the apparatus or the film formation is defective. Is suppressed. The position where the exhaust line 260 is provided is not limited to the position shown in FIG. 10 as long as it is a position where the scattered material gas can be suitably exhausted.

The third embodiment of the present invention has been described with reference to FIGS. 7 to 10 exemplifying the case where film formation is performed using one kind of material gas. For example, the first embodiment is described above. In the case of performing the film forming process using two kinds of material gases as in the above embodiment, it is naturally possible to measure the film forming rate of each material gas by using two measuring devices provided outside the processing chamber. .

(Fourth embodiment)
In the film forming apparatuses according to the first to third embodiments, a carrier gas (for example, argon gas) containing a material gas is introduced into the material supply mechanism by the carrier gas introduction mechanism. In this case, as described in the first embodiment, a certain relationship is normally secured between the film formation amount (film formation rate) on the crystal resonator and the film formation amount (film formation rate) on the substrate G. It is supposed to be. In order to confirm this, the present inventors installed a crystal resonator in the vicinity of the head (that is, in the vicinity of the substrate G), and the film formation amount (film formation rate) of the crystal resonator in the vicinity of the head and the crystal vibration of the measuring apparatus. The film formation amount in the child was compared. That is, the inventors have intensively studied the relationship between the amount of film formed by the material gas flowing through the branch flow path and the amount of film formed by the material gas flowing into the head. FIG. 11 is an explanatory diagram showing a schematic configuration of the film forming apparatus 300 in which the present study was performed. In the film forming apparatuses 300 and 300a shown in FIGS. 11 and 13 described below, components having the same functional configuration as those in the first to third embodiments are denoted by the same reference numerals. Description is omitted. Further, in the film forming apparatus according to FIGS. 11 and 13, the case where there is one kind of film forming material is illustrated.

As shown in FIG. 11, the film forming apparatus 300 communicates with an optical detection device 310 such as a Fourier transform infrared spectroscopy (FTIR) device provided in the middle of the material gas supply path 40 from the branch flow path 50. A measuring device 60 is provided. Here, the optical detection device 310 includes a measurement optical path 310b for measuring the concentration of a material gas used for film formation and a film formation rate, and a light source for irradiating measurement light (for example, infrared light) to the measurement optical path 310b. 310a and a detector 310c that receives the light emitted from the light source 310a and passed through the measurement light path 310b, and detects the absorption spectrum of the received light. As shown in FIG. 11, the measurement optical path 310 b is arranged in the processing chamber 10, while the light source 310 a and the detector 310 c are arranged outside the processing chamber 10. Therefore, the processing chamber 10 is provided with a transmission window 312 for allowing the light emitted from the light source 310a to reach the measurement optical path 310b, and a transmission window 313 for allowing the light passing through the measurement optical path 310b to reach the detector 310c. It has been. The transmission windows 312 and 313 are windows made of, for example, calcium fluoride that can transmit light while suppressing light attenuation. Moreover, the specific installation location of these transmission windows 312 and 313 is, for example, in the vicinity of both ends in the longitudinal direction of the measurement optical path 310b.

The optical detection device 310 can accurately measure the concentration of the material gas flowing in the measurement optical path 310b and the film formation rate of the material gas. The optical detector 310 measures the concentration of the material gas flowing through the material gas supply path 40 and the film formation rate, but accurately measures the film formation rate of the thin film actually formed on the substrate G. Since it is not possible, it is used as an auxiliary for measuring the deposition rate.

Further, in the film forming apparatus 300, a crystal resonator 315 is also provided in the vicinity of the substrate G, and the same gas as the material gas that is actually injected from the head 20 onto the substrate G is also injected into the crystal resonator 315. It has a configuration.

In the film forming apparatus 300 shown in FIG. 11, the inventors flow a material gas at a predetermined temperature (for example, 290 ° C.) through the material gas supply path 40, and form a film on the crystal resonator 65 in the measuring apparatus 60 at that time. The relationship between the amount (film formation rate) and the film formation amount (film formation rate) in the crystal resonator 315 near the substrate G was examined.

FIG. 12 shows the carrier gas flow rate (Ar Flow in the figure) in the material gas supply path 40 and the crystal vibration in the vicinity of the head when a material gas of 290 ° C. is used in the film forming apparatus 300 having the configuration shown in FIG. 6 is a graph showing a relationship between a film formation amount of the child element 315 and a film formation amount of the crystal resonator 65 of the measuring device 60 (Head / Pass in the figure). As shown in FIG. 12, when the carrier gas flow rate is a predetermined amount or more (about 5 sccm or more in FIG. 12), the film formation amount of the crystal resonator 315 near the head and the film formation amount of the crystal resonator 65 of the measuring device. The ratio is substantially constant (in FIG. 12, about 5). Therefore, when the carrier gas flow rate is a predetermined amount or more, as in the first to third embodiments, the film formation amount (film formation rate) for the crystal resonator and the film formation amount (film formation) for the substrate G are formed. It can be seen that there is no problem if the film thickness control is performed assuming that there is a certain relationship (correlation) in (rate).

On the other hand, when the carrier gas flow rate (that is, the material gas flow rate) is less than a predetermined amount (less than about 5 sccm in FIG. 12), the film formation amount of the crystal resonator 315 in the vicinity of the head and the crystal resonator 65 of the measuring device are formed. The ratio with the amount of film is not constant. This is because when the carrier gas flow rate is less than a predetermined amount, a sufficient amount of material gas does not easily flow into the measuring device 60 or the head 20, so that the measurement value varies, and the crystal resonator 315 in the vicinity of the head 20 is formed. It is considered that the factor is that the ratio between the amount and the film formation amount of the crystal resonator 65 of the measuring device 60 is not constant.

Accordingly, the inventors of the present invention have only the carrier gas (that is, does not include the material gas) with respect to the material gas supply path 40 in order to always set the flow rate of the carrier gas flowing through the entire material gas supply path 40 to a predetermined amount or more. It was invented to provide a carrier gas introduction path to introduce the. Hereinafter, a film forming apparatus 300a having a configuration in which the carrier gas introduction path 320 is provided will be described.

FIG. 13 is a schematic explanatory diagram of a film forming apparatus 300a having a structure in which a carrier gas introduction path is further provided in the film forming apparatus having the structure shown in FIG. As shown in FIG. 13, the material gas supply path 40 is provided with a carrier gas introduction path 320 for introducing a predetermined amount of carrier gas into the supply path 40, and the carrier gas introduction path 320 is a carrier gas introduction mechanism 321. Communicating with The carrier gas introduction path 320 is provided with a control valve V11 that can be opened and closed.

In the film forming apparatus 300a shown in FIG. 13, the material from the carrier gas introduction mechanism 321 is used regardless of whether the flow rate of the carrier gas including the material gas introduced from the carrier gas introduction mechanism 45 is low or high. By introducing a suitable amount of carrier gas that does not contain gas, the flow rate of the entire carrier gas flowing in the material gas supply path 40 can be adjusted to a predetermined amount. Here, the flow rate of the entire carrier gas flowing through the material gas supply path 40 is determined in advance by the film forming conditions and the like. For example, the film forming amount of the crystal resonator 315 near the head and the crystal resonator of the measuring apparatus as shown in FIG. The flow rate is such that the ratio with the film formation amount of 65 is substantially constant, and it is clear that there is a certain correlation between the film formation amount on the crystal resonator 65 and the film formation amount on the substrate G.

As shown in FIG. 13, the material gas introduced from the carrier gas introduction mechanism 45 is included by adopting an apparatus configuration in which the material gas supply passage 40 can be introduced from a carrier gas introduction passage 320 that does not contain a material gas. Even if the flow rate of the carrier gas is low, the flow rate of the entire carrier gas flowing in the material gas supply path 40 can be set to a predetermined flow rate or more. Therefore, a sufficient amount of material gas does not flow into the measurement apparatus 60 as described above, and the ratio between the film formation amount of the crystal resonator 315 near the head and the film formation amount of the crystal resonator 65 of the measurement apparatus 60 is constant. In other words, there is a certain relationship (correlation) between the film formation amount (film formation rate) on the crystal resonator 65 in the measuring apparatus 60 and the film formation amount (film formation rate) on the substrate G. When a film is formed, a thin film having a desired film thickness is formed on the substrate G (film thickness control).

FIG. 14 shows the flow rate of the carrier gas flowing in the material supply mechanism 30 when the carrier gas not containing the material gas is fixed at 5 sccm from the carrier gas introduction mechanism 321 in the apparatus configuration shown in FIG. ) And the ratio (Head / Pass in the drawing) of the film formation amount of the crystal resonator 315 in the vicinity of the head and the film formation amount of the crystal resonator 65 of the measuring device 60. In the graph shown in FIG. 14, the temperature of the material gas is exemplarily illustrated as in FIG.

As shown in FIG. 14, when the flow rate of the entire carrier gas is set to a predetermined flow rate or higher, the film formation of the crystal resonator 315 in the vicinity of the head is possible whatever the flow rate of the carrier gas flowing in the material supply mechanism 30 is. The ratio between the amount and the film formation amount of the crystal resonator 65 of the measuring device is substantially constant (about 2.5 in FIG. 14). In particular, when FIG. 12 and FIG. 14 are compared, when the flow rate of the carrier gas flowing in the material supply mechanism 30 is low (specifically, when Ar Flow in FIGS. 12 and 14 is less than about 5 sccm). 12, the ratio (Head / Pass) between the film formation amount of the crystal resonator 315 near the head and the film formation amount of the crystal resonator 65 of the measuring apparatus is not constant, whereas in FIG. It is clear that it is almost constant.

That is, from the graph shown in FIG. 14, when the flow rate of the entire carrier gas flowing through the material gas supply path 40 is set to a predetermined flow rate or more, the film formation amount (film formation rate) on the crystal resonator 65 in the measuring device 60. It can be understood that a thin film having a desired film thickness is formed on the substrate G if the film formation is performed assuming that there is a certain relationship (correlation) between the film formation amount (film formation rate) and the substrate G.

(Fifth embodiment)
In the film forming apparatus 300a according to the fourth embodiment, the case where there is one kind of film forming material has been illustrated and described. However, the present invention is not limited to this, and for example, a film forming material (material gas) This can also be applied to the case where film formation is performed using two types. FIG. 15 is a schematic explanatory diagram of a film forming apparatus 350 according to the fifth embodiment. In FIG. 15, constituent elements having the same functional configuration as those of the first to fourth embodiments are illustrated using the same reference numerals as appropriate, and description thereof is omitted. Also in this embodiment, two measuring devices 60 having the same device configuration are installed as in the first embodiment, but for convenience of explanation, a measuring device that measures the first material gas is used. A measuring device for measuring 60a and the second material gas is 60b.

As shown in FIG. 15, in the film forming apparatus 350, the material gas supply path 40 that supplies the first material gas and the material gas supply path 41 that supplies the second material gas have the same common supply path 352 (that is, , Corresponding to the material gas supply path of the mixed gas), and the end of the common supply path 352 is connected to the head 20. That is, the first material gas supplied from the material gas supply path 40 and the second material gas supplied from the material gas supply path 41 are mixed in the common supply path 352 and introduced into the head 20 as a mixed gas. It has become. The material gas supply path 40 is provided with a measuring device 60a, and the material gas supply path 41 is provided with a measuring device 60b.

The common supply path 352 is provided with a carrier gas introduction path 320 for introducing a predetermined amount of carrier gas into the common supply path 352 in addition to the material gas supply paths 40 and 41. It communicates with the carrier gas introduction mechanism 321. The carrier gas introduction path 320 is provided with a control valve V11 that can be opened and closed.

In the film forming apparatus 350 having the configuration shown in FIG. 15 as well, a plurality of material gases (in this embodiment, two kinds of first material gas and second material gas) are mixed, as in the first embodiment. When the film is formed on the substrate with the mixed gas, the measurement is performed for each material gas by using a crystal resonator (measuring device 60a, 60b) for each material gas before being mixed. The relationship between the obtained measurement result and the film thickness when the film is actually formed on the substrate by the mixed gas is calculated, and the film thickness can be precisely controlled. In addition, similarly to the fourth embodiment, a carrier gas containing a material (a mixed gas containing a material gas) can be supplied to the common supply path 352 at a constant flow rate of a predetermined amount or more.

On the other hand, when a film is formed by mixing a plurality of types of material gases (for example, two types of material gases as in the present embodiment), the following problems also exist. That is, in the film forming apparatus 350 having the configuration shown in FIG. 15, in order to change the film forming conditions when the mixed gas is supplied to the common supply path 352 at a flow rate of a predetermined amount or more to perform the film forming process on the substrate G. For example, when only the supply amount of the second material gas is changed, the flow rate of the entire mixed gas flowing in the common supply path 352 is also changed. At this time, when the film formation rate is measured in the crystal resonator 315 in the vicinity of the head 20, the film formation rate of the second material gas whose supply amount is changed naturally also changes, but the flow rate of the entire mixed gas changes. The film forming rate of the first material gas also varies. That is, there is a problem in that only the supply amount of the second material gas is changed, which also affects the measurement of the deposition rate of the first material gas whose supply amount is not changed.

In other words, for the first material gas, the film formation rate measured by the measuring device 60a and the film formation rate measured by the crystal resonator 315 in the vicinity of the head 20 even though the gas supply amount is not changed. Will be changed, and the film thickness control will be affected.

More specifically, the film formation conditions are, for example, when the supply amount of the first material gas is 1 sccm, the supply amount of the second material gas is 2 sccm, and the supply amount of the carrier gas from the carrier gas introduction path 320 is 4 sccm. Assume that the film formation rate of the first material gas in the measuring apparatus 60a is 2 nm / sec, and the film formation rate of the first material gas in the crystal resonator 315 is 4 nm / sec. Here, if the supply amount of the second material gas is changed to a flow rate of 4 sccm, the flow rate of the entire mixed gas varies from 7 sccm to 9 sccm. Since the supply amount of the first material gas itself is not changed, the film formation rate of the first material gas in the crystal unit 315 should be measured as 2 nm / sec. May be measured as a value lower than 2 nm / sec (for example, 1.5 nm / sec).

Therefore, in such a case, the inventors changed the supply amount of the carrier gas supplied from the carrier gas introduction path 320 in accordance with the change in the supply amount of the second material gas, so that the entire mixed gas As described above, the second material gas supply rate fluctuation is performed by controlling the flow rate of the first material gas to be constant before and after the second material gas supply amount fluctuation. It has been found that the problem of being affected can be avoided. That is, in the above specific example, the carrier gas supply amount from the carrier gas introduction path 320 is reduced from 4 sccm to 2 sccm, so that the flow rate of the entire mixed gas remains at the original 7 sccm, and the first material gas film formation rate is measured. The problem that the influence of the fluctuation of the second material gas supply amount appears can be avoided.

That is, by providing the carrier gas introduction path 320, when forming a film on the substrate G with a mixed gas in which a plurality of types of material gases are mixed, the film formation of other material gases due to the fluctuation of the flow rate of each material gas is performed. The influence on the rate measurement can be suppressed, and the film thickness control and film formation can be performed without impairing the correlation between the film formation rate for the crystal resonator and the film formation rate for the substrate G in the measurement apparatus described above. It becomes possible.

In the present embodiment, the case where the carrier gas introduction path 320 is provided as one independent flow path has been illustrated and described. However, for example, only the carrier gas is introduced into the flow path of the material gas supply paths 40 and 41. An introduction path can also be provided individually.

(Sixth embodiment)
In the fifth embodiment, the configuration in which the introduction of the carrier gas from the carrier gas introduction path 320 is performed from the upstream of each material gas (first material gas / second material gas) is illustrated and described in FIG. The present invention is not limited to such an apparatus configuration. For example, the carrier gas introduction path 320 is directly communicated with the head 20, and each material gas is disposed along the carrier gas flow direction along the carrier gas introduction path 320. The material gas supply paths 40 and 41 may be connected to the carrier gas introduction path 320 so as to supply.

FIG. 16 is a schematic explanatory diagram of a film forming apparatus 350 ′ according to the sixth embodiment. In addition, about the component which has the same function structure as the film-forming apparatus 350 concerning the said 5th Embodiment, it shows with the same code | symbol suitably, and the description is abbreviate | omitted. As shown in FIG. 16, in the film forming apparatus 350 ′, a carrier gas introduction path 320 is provided so as to communicate with the head 20, and the material gas supply path 40 and the material gas supply path 41 are provided in the middle of the carrier gas introduction path 320. Is connected. At the connection between the material gas supply paths 40 and 41 and the carrier gas introduction path 320, the flow direction of each material gas (first material gas and second material gas) that merges from the material gas supply paths 40 and 41 is the carrier gas. It is configured to be in a direction along the flow of the carrier gas in the introduction path 320 (see the arrow in FIG. 16).

In the film forming apparatus 350 ′ according to the present embodiment, the carrier gas flows backward from the carrier gas introduction path 320 to the material gas supply paths 40 and 41, and the material gas from the material gas supply paths 40 and 41 to the carrier gas introduction path 320. Therefore, it is possible to perform an efficient film forming process. Here, the effect of preventing the backflow is further ensured by setting the flow rate of the carrier gas in the carrier gas introduction channel 320 to a flow rate larger than the flow rates of the material gases in the material gas supply channels 40 and 41.

The present invention can be applied to, for example, a film forming apparatus and a film forming method used for forming a light emitting layer in manufacturing an organic EL element.

Claims (10)

1. A film forming apparatus for forming a thin film on a substrate,
   A pressure-reducible material supply section for supplying a carrier gas and a material gas;
   A head for injecting a material gas onto the upper surface of the substrate,
   The material supply unit and the head communicate with each other via a material gas supply path,
   The material gas supply channel is provided with a branch channel that branches from the material gas supply channel,
   A measuring device for measuring the amount of film formation of the material gas is connected to the branch channel.
2. The film forming apparatus according to claim 1, wherein a control valve for controlling supply of a carrier gas and a material gas from the material supply unit is provided in the material gas supply path and the branch flow path.
3. The film forming apparatus according to claim 1, wherein the measuring apparatus includes a crystal resonator for measuring a film thickness and a shutter that controls injection of a material gas to the crystal resonator.
4. The film forming apparatus according to claim 1, wherein the head, the branch channel, and the measuring device are arranged in the same chamber heated to a predetermined temperature.
5. A plurality of the material supply sections are provided, a different material gas supply path is provided for each material supply section, and the measuring device is connected to each of a plurality of branch flow paths branched from the different material gas supply paths. The film forming apparatus according to claim 1.
6. A plurality of the material supply units are provided, a different material gas supply path is provided for each material supply unit, and one common measuring device is connected to a plurality of branch flow paths branched from the different material gas supply paths. The film forming apparatus according to claim 1, wherein
7. The film forming apparatus according to claim 1, further comprising a carrier gas introduction mechanism that introduces a carrier gas to the material gas supply path via a carrier gas introduction path.
8. A plurality of the material supply units are provided, and different material gas supply paths for each material supply unit,
   A common supply path to which the different material gas supply paths are connected is provided;
   The measuring device is connected to each of a plurality of branch channels branched from the different material gas supply channels,
   The film forming apparatus according to claim 1, further comprising a carrier gas introduction mechanism that introduces a carrier gas to the common supply path via a carrier gas introduction path.
9. A film forming method for controlling a film thickness based on a relationship between a film forming rate on a substrate and a film forming rate in a film forming material supply unit,
   When the flow rate of the film forming material gas supplied from the supply unit is a predetermined value or less, in addition to the film forming material gas, a carrier gas not containing the film forming material gas is supplied to perform film formation at a flow rate of the predetermined value or higher. , Film formation method.
10. The film forming material gas is a plurality of types,
    The film forming method according to claim 9, wherein film formation is performed with a total of a supply amount of a plurality of kinds of film formation material gases and a supply amount of a carrier gas not including a film formation material gas being constant.

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