KR102144849B1 - Deposition apparatus for flat panel display device - Google Patents

Abstract

A deposition apparatus for a flat panel display device capable of processing a large area substrate is disclosed. The deposition apparatus includes a process chamber in which a substrate is accommodated and a deposition process is performed, a gas supply unit having a plurality of injection ports to provide a deposition gas in the process chamber, and at least one of the injection ports of the gas supply unit. It is provided and is selectively mounted, and comprises a control member for adjusting the flow rate of the deposition gas provided from the injection port.

Description

Evaporation device for flat panel display device{DEPOSITION APPARATUS FOR FLAT PANEL DISPLAY DEVICE}

The present invention relates to a deposition apparatus for a flat panel display device, and to a deposition apparatus for a flat panel display device capable of uniformly providing a deposition gas and processing a large area substrate.

Flat panel displays (FPDs) include liquid crystal displays (LCDs), plasma display panels (PDPs), and organic light emitting diodes (OLEDs). Among them, organic light-emitting display devices are attracting attention as a next-generation display device in terms of characteristics such as self-emission, wide viewing angle, high-speed response, low power consumption, and the like and can be made ultra-thin. In general, organic light emitting display devices include a first electrode corresponding to an anode on a glass substrate, a hole injection layer, a hole transfer layer, a light emitting layer, and an electron transfer layer. layer) and an electron injection layer, and a second electrode corresponding to a cathode.

Organic thin film formation methods include vacuum deposition, sputtering, ion-beam deposition, pulsed-laser deposition, molecular beam deposition, chemical vapor deposition (CVD), and spin coater. ) Can be used.

According to embodiments of the present invention, it is to provide a deposition apparatus for a flat panel display device capable of uniformly depositing a thin film on a large-area substrate, such as a substrate for a flat panel display device.

The problems to be solved by the present invention are not limited to the problems mentioned above, and other problems that are not mentioned will be clearly understood by those skilled in the art from the following description.

According to embodiments of the present invention for achieving the object of the present invention described above, a deposition apparatus for a large-area flat panel display device includes a process chamber in which a substrate is accommodated and a deposition process is performed, and a deposition gas is provided inside the process chamber. A gas supply unit having a plurality of injection ports and a control member provided in at least one of the injection ports of the gas supply unit and selectively mounted to adjust the flow rate of the deposition gas provided from the injection port. It is composed by

According to one side, the adjusting member may include a housing formed to be coupled to the injection port, and a flow separation unit, which is a partition wall provided inside the housing to divide the interior of the housing. For example, the housing may be formed in a cylindrical shape that can be coupled to the spray port. In addition, the housing may have a hollow shape in which one end is formed to communicate with the injection port, and the other end is formed with a first opening to communicate with the inside of the process chamber. In addition, the flow separation unit may include an inclined portion whose end is inclined at a predetermined angle along the flow direction of the deposition gas. In addition, the adjusting member may have a second opening formed in which the inclined portion closes the end of the housing, and a second opening through which the deposition gas guided by the inclined portion is injected into a side surface of the housing. For example, the second opening is formed on the side of the housing, and may be a slit or an opening along the flow direction of the deposition gas. In addition, the adjusting member may be coupled so that the flow of the deposition gas guided by the flow separation unit is provided outside the edge of the gas providing unit.

According to one side, the gas providing unit is provided on one side of the process chamber to provide a deposition gas parallel to the substrate, and the adjusting member may be provided at a jet port located at an edge of the gas providing unit. have.

According to one side, an exhaust unit for discharging exhaust gas may be provided on the other side of the process chamber facing the gas providing unit.

According to one side, two gas providing units may be provided side by side.

Various embodiments of the present invention may have one or more of the following effects.

As described above, according to embodiments of the present invention, by selectively installing the control member at a required position, it is possible to prevent the occurrence of congestion of the deposition gas and uniformly provide the deposition gas.

1 is a plan view of a deposition apparatus according to an embodiment of the present invention.
FIG. 2 is an enlarged view of a portion of a gas providing unit to which an adjusting member is coupled in the deposition apparatus of FIG. 1.
3 is a perspective view of an adjustment member according to an embodiment of the present invention.
4 is a perspective view of the adjusting member of FIG. 3 cut away.

Hereinafter, some embodiments of the present invention will be described in detail through exemplary drawings. In adding reference numerals to elements of each drawing, it should be noted that the same elements are assigned the same numerals as possible even if they are indicated on different drawings. In addition, in describing an embodiment of the present invention, if it is determined that a detailed description of a related known configuration or function obstructs an understanding of the embodiment of the present invention, the detailed description thereof will be omitted.

In addition, in describing the constituent elements of the embodiment of the present invention, terms such as first, second, A, B, (a) and (b) may be used. These terms are only for distinguishing the component from other components, and the nature, order, or order of the component is not limited by the term. When a component is described as being "connected", "coupled" or "connected" to another component, that component may be directly connected or connected to that other component, but another component between each component It should be understood that may be “connected”, “coupled” or “connected”.

Hereinafter, an apparatus 10 for depositing a substrate for a flat panel display device according to an embodiment of the present invention will be briefly described with reference to FIGS. 1 to 4. For reference, FIG. 1 is a plan view of a deposition apparatus 10 according to an embodiment of the present invention, and FIG. 2 is a gas providing unit 13 to which an adjustment member 15 is coupled in the deposition apparatus 10 of FIG. 1 It is a view showing an enlarged part of. And Figure 3 is a perspective view of the adjustment member 15 according to an embodiment of the present invention, Figure 4 is a perspective view of a state in which the adjustment member 15 of Figure 3 cut away.

Referring to the drawings, the deposition apparatus 10 for a flat panel display device is a device capable of processing a large-area substrate 1 such as a substrate 1 for a flat panel display device (FPD), and includes a process chamber ( 11) and a gas providing unit 13 and a control member 15 selectively coupled to the gas providing unit 13 to uniformly provide a deposition gas.

For reference, in this embodiment, the'substrate 10' may be a transparent substrate including glass for a flat panel display device such as a liquid crystal display (LCD) and a plasma display panel (PDP). However, the substrate 1 of the present invention is not limited thereto, and may be a silicon wafer for manufacturing a semiconductor device. In addition, the shape and size of the substrate 1 are not limited by the drawings, and may have substantially various shapes and sizes, such as a circle and a square.

In addition, the term'deposition gas' in the present embodiment includes at least one gas provided to deposit a thin film on the substrate 1, and includes a constituent material of the thin film to be formed on the substrate 1 It includes a source gas, a reactance gas chemically reacting with the source gas, and a purge gas for purging the source gas and the reactance gas. However, the present invention is not limited thereto, and the type of deposition gas may be substantially variously changed according to the type of thin film to be deposited.

The process chamber 11 accommodates the substrate 1 and provides a space in which a deposition process is performed. Meanwhile, in the present embodiment, it is illustrated that one substrate 1 is accommodated in the process chamber 11, but the present invention is not limited thereto and may be applied even when a plurality of substrates 1 are accommodated.

The gas providing unit 13 is provided on the side of the process chamber 11 to provide a deposition gas inside the process chamber 11 and provide a deposition gas parallel to the substrate 1. The gas providing unit 13 includes a plurality of injection ports 131 through which deposition gas is injected onto the substrate 1 and an inlet through which deposition gas is introduced.

The injection port 131 is formed to provide a deposition gas parallel to the substrate 1. For example, the injection ports 131 are arranged in a row or in a plurality of rows.

As shown in FIG. 1, two or more gas providing units 13 may be provided so as to process the large-area substrate 1. However, the present invention is not limited by the drawings, and the shape of the gas providing unit 13 may be substantially variously changed.

The adjusting member 15 is coupled to the injection port 131 of the portion where the deposition gas is stagnant in the process chamber 11, and controls the flow of the deposition gas. For reference, the gas providing unit 13 provides the deposition gas in a straight line, and the deposition gas injected from the injection port 131 located at the edge of the gas providing unit 13 sufficiently diffuses into the process chamber 11 It may not be possible and congestion may occur. Accordingly, in this embodiment, the adjusting member 15 is coupled to the injection port 131 at the edge position of the gas providing unit 13.

Here, in the present embodiment, it is illustrated that the adjustment member 15 is coupled to the injection ports 131 at both edges of the gas providing unit 13 one by one, but the present invention is not limited thereto, The adjusting member 15 may be coupled to two or more injection ports 131 at the edges. In addition, even if it is not at the edge position, the control member 15 is coupled to the injection port 131 at the position where the stagnation of the boosting gas occurs, so that the boosting gas can flow uniformly.

The adjusting member 15 is provided with a housing 151 having a shape that can be coupled to the injection port 131 and a flow separation unit 153 for diffusing the deposition gas and controlling the flow thereof.

The housing 151 communicates with the injection port 131 to form a flow path through which the deposition gas flows. In addition, the housing 151 has one end in communication with the injection port 131 and the other end in the shape of a hollow pipe communicating with the inside of the process chamber 11. For example, the housing 151 may have a cylindrical shape having an outer diameter corresponding to the inner diameter of the injection port 131, and a part of the housing 151 may be inserted into the injection port 131 to be coupled. However, the present invention is not limited by the drawings, and the shape of the housing 151 may have substantially various shapes that can be coupled to the spray port 131.

The flow separation unit 153 is formed as a partition wall dividing the interior of the housing 151 so as to diverge the flow of the deposition gas flowing inside the housing 151. In this embodiment, the flow separation unit 153 is illustrated as being provided to divide the interior of the housing 151 into two, but the present invention is not limited thereto, and the volume divided by the flow separation unit 153 is substantially variously can be changed.

At the end of the flow separation unit 153, an inclined portion 154 for changing and diffusing the flow direction of the deposition gas is provided. The inclined portion 154 extends from the flow separation portion 153 and is formed in a shape inclined at a predetermined angle with respect to the flow separation portion 153 to diffuse the flow of the deposition gas in one direction. That is, by forming the inclined portion 154, the deposition gas flowing through the control member 15 can be diffused.

Here, the inclined portion 154 is formed to close the end (first opening 152) of the housing 151, and the adjusting member 15 diffuses the deposition gas flowing obliquely by the inclined portion 154 more widely. The second opening 155 is formed so that it can be performed. Here, the second opening 155 is formed on the side of the housing 151 so that the deposition gas flowing obliquely can be widely diffused. For example, the second opening 155 may be a slit or an opening formed long in the longitudinal direction from the side of the housing 151.

According to this embodiment, a flow provided through the first opening 152 and a flow provided through the second opening 155 are provided inside the housing 151. The deposition gas provided through the first opening 152 is provided substantially parallel to the deposition gas provided through the injection port 131. In addition, the deposition gas provided through the second opening 155 is inclined at a predetermined angle with respect to the deposition gas provided from the injection port 131 and is provided wider. Here, the adjusting member 15 is coupled so that the second opening 155 faces the outside of the gas providing unit 13.

An exhaust unit 17 is provided on the other side of the process chamber 11 facing the gas supply unit 13 to discharge exhaust gas from the inside of the process chamber 11. For example, the exhaust part 17 is provided at a position facing each other in a straight line with the gas providing part 13 and may be formed in a shape corresponding to each other. However, the present invention is not limited by the drawings, and the shape of the exhaust part 17 may be substantially variously changed.

Meanwhile, in the above-described embodiment, the gas providing unit 13 has been described in a manner that provides the deposition gas parallel to the substrate 1, but the present invention is not limited thereto, and the gas providing unit 13 is a process chamber ( It is provided on the upper surface of 11) and can be applied to a form in which a deposition gas is provided vertically to the substrate 1. In this case, the gas providing unit 13 may have the injection port 131 disposed in a circular shape or a fan shape. In addition, the adjusting member 15 is provided at a position where the deposition gas is stagnant, and may be coupled to, for example, a jet port 131 at a circular edge. In addition, the adjusting member 15 is provided to allow the gas to be diffused and injected to the outside.

As described above, although the embodiments have been described by the limited embodiments and drawings, various modifications and variations are possible from the above description by those of ordinary skill in the art. For example, the described techniques are performed in an order different from the described method, and/or components such as a system, structure, device, circuit, etc. described are combined or combined in a form different from the described method, or other components Alternatively, even if substituted or substituted by an equivalent, an appropriate result can be achieved.

Therefore, other implementations, other embodiments, and claims and equivalents fall within the scope of the claims to be described later.

1: substrate
10: evaporation device
11: process chamber
13: Gas supply section
131: spray port
15: adjustment member
151: housing
152: first opening
153: flow separation unit
154: slope
155: second opening
17: exhaust

Claims (11)

A process chamber in which a substrate is accommodated and a deposition process is performed;
A gas providing unit provided in the process chamber and having a plurality of injection ports for injecting deposition gas onto the substrate; And
Including an adjustment member coupled to at least one or more spray ports of the plurality of spray ports,
The adjusting member,
A housing having one end inserted into the injection port and having a first opening communicating with the injection port formed at the other end;
A flow separation unit formed in the interior of the housing in the form of a partition wall to divide the interior of the housing;
An inclined portion connected to an end of the flow separation portion so as to incline with respect to the flow direction of the deposition gas; And
And a second opening formed on a side surface of the housing to inject the deposition gas flowing obliquely by the inclined portion to the outside of the housing.
delete The method of claim 1,
The housing is a deposition apparatus formed in a cylindrical shape that can be coupled to the spray port.
delete delete delete The method of claim 1,
The second opening is formed on a side surface of the housing, and is a slit or opening in a flow direction of the deposition gas.
The method of claim 1,
The adjusting member is a deposition apparatus that is coupled so that the flow of the deposition gas guided by the flow separation unit is provided outside the edge of the gas providing unit.
The method of claim 1,
The gas providing unit is provided on one side of the process chamber to provide a deposition gas parallel to the substrate,
The control member is a deposition apparatus provided in the injection port located at the edge of the gas providing unit.
The method of claim 1,
A deposition apparatus having an exhaust unit for discharging exhaust gas on the other side of the process chamber facing the gas providing unit.
The method of claim 1,
A deposition apparatus in which two gas supply units are provided side by side.

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