KR20150061854A - Deposition apparatus and method for flat panel display device - Google Patents

Abstract

Disclosed are a deposition apparatus and a deposition method for a flat panel display device, which can deposit a thin film on a substrate for a flat panel display device and improve deposition quality. A deposition apparatus of a substrate for a flat panel display device comprises: a substrate support unit wherein one sheet of substrate is mounted; a process chamber providing a deposition space wherein a deposition process is performed by accommodating the substrate and the substrate support unit, wherein a plurality of inlets are formed for injecting deposition gas to the deposition space in an upper portion; a gas supply unit alternately providing a different plurality of deposition gas to the substrate through the inlets and providing the deposition gas to flow in parallel on the substrate inside the deposition space; and an upper exhaust unit discharging exhaust gas inside the deposition space through the inlets.

Description

TECHNICAL FIELD [0001] The present invention relates to a deposition apparatus and a deposition method for a flat panel display device,

The present invention relates to a deposition apparatus for a substrate for a flat panel display, and more particularly, to a deposition apparatus and a deposition apparatus for a flat panel display apparatus having a plurality of gas supply nozzle units for uniformly forming a thin film on a large- ≪ / RTI >

A flat panel display (FPD) includes a liquid crystal display (LCD), a plasma display panel (PDP), and an organic light emitting diode (OLED). Of these, an organic light emitting display device is attracting attention as a next generation display device in terms of characteristics such as self emission, wide viewing angle, high speed response, low power consumption and the ability to be made ultra thin. The organic light emitting display device typically includes a first electrode corresponding to an anode, a hole injection layer, a hole transfer layer, an emitting layer, an electron transfer layer (electron transfer layer) layer and an electron injection layer, and a second electrode corresponding to a cathode.

Methods for forming the organic thin film include vacuum deposition, sputtering, ion beam deposition, pulsed-laser deposition, molecular beam deposition, chemical vapor deposition (CVD), spin coater ) Can be used.

Meanwhile, a sealing film for protecting the organic thin film from moisture is needed. As a method for forming the sealing thin film, a method such as vacuum deposition, sputtering, chemical vapor deposition, and atomic layer deposition (ALD) have.

Embodiments of the present invention provide a deposition apparatus and a deposition method for a flat panel display apparatus capable of uniformly depositing a thin film on a large-area substrate such as a substrate for a flat panel display apparatus.

According to embodiments of the present invention for achieving the object of the present invention, a deposition apparatus for a flat panel display device includes a substrate support unit on which a substrate is placed, a substrate holding unit for supporting the substrate, A process chamber in which a plurality of inlets for injecting the deposition gas are formed in the deposition space, and a plurality of deposition gases different from each other are alternately provided in the substrate through the inlets, And a top exhaust unit for exhausting exhaust gas from the inside of the deposition space through the inlet.

According to one aspect, the inlet may include any one or more of a plurality of holes, slots, or nozzles. In addition, the process chamber may include at least one side inlet port at a position corresponding to both edge portions of the substrate. In addition, the side inlet may be inclined toward the inside of the deposition space. In addition, the process chamber may include at least one inner inlet at a position corresponding to a central portion of the substrate.

According to one aspect of the present invention, a lower portion of the process chamber may further include a purge gas for introducing the purge gas into the lower portion of the substrate support portion, and an exhaust port for exhausting the exhaust gas from the lower portion of the substrate support portion. For example, the exhaust port may be connected to a lower exhaust unit for exhausting the exhaust gas to the outside.

According to one aspect of the present invention, the substrate supporting part may be formed with a sealing step for sealing the deposition space, and a sealing flange for engaging with the sealing step may be formed in the process chamber. In addition, the substrate supporting part may be formed with a sealing step for sealing the deposition space, and a sealing flange for engaging with the sealing step may be formed in the process chamber.

According to another aspect of the present invention, there is provided a deposition method for a flat panel display, including: depositing a deposition gas on a plurality of inlets provided above a process chamber, A method of depositing an atomic layer on a substrate, the method comprising the steps of: providing a substrate and an upper exhaust portion for exhausting the exhaust gas in the process chamber, the deposition gas being alternately supplied to at least one inlet of the plurality of inlets, A thin film is formed according to the process, and the exhaust gas is exhausted from the remaining inlets.

According to one aspect, the inlet comprises at least one side inlet at an edge portion of the process chamber and at least one or more inside inlet in a central portion of the process chamber, wherein the inlet of either the side inlet or the inlet The gas supply source connected to the gas supply source is turned ON, the upper exhaust unit is turned OFF, the gas supply source connected to the remaining inlets is OFF, and the upper exhaust unit is turned ON, And can be alternatively at the inlet. For example, after the deposition gas is provided at one inlet, then the deposition gas may be provided to flow in the opposite direction. In addition, when a deposition gas is provided at the one side inlet, a deposition gas is provided through another side inlet that is next to the side inlet, and after the deposition gas is provided at the side inlet, Can be provided.

According to embodiments of the present invention, since a thin film is deposited by an atomic layer deposition method, a uniform thin film can be formed on a substrate.

1 and 2 are sectional views of a deposition apparatus for a flat panel display device according to an embodiment of the present invention.
FIGS. 3 to 6 are cross-sectional views illustrating an operation of a deposition apparatus for a flat panel display according to an embodiment of the present invention.
FIG. 7 is a graph showing a supply cycle of a deposition gas for explaining the operation of a deposition apparatus for a flat panel display according to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited to or limited by the embodiments. In describing the present invention, a detailed description of well-known functions or constructions may be omitted for clarity of the present invention.

Hereinafter, a deposition apparatus 100 for a substrate for a flat panel display according to an embodiment of the present invention will be briefly described with reference to FIGS. 1 to 7. FIG. For reference, FIGS. 1 and 2 are cross-sectional views briefly showing a configuration of a deposition apparatus 100 for a flat panel display device according to an embodiment of the present invention. FIGS. 3 to 6 are cross-sectional views briefly showing the operation of the deposition apparatus 100 for a flat panel display according to an embodiment of the present invention, and FIG. 7 is a cross- A graph showing a supply cycle of the deposition gas for explaining the operation of the deposition apparatus 100 for a display apparatus.

Referring to the drawings, a deposition apparatus 100 for a flat panel display apparatus is an apparatus capable of processing a large-area substrate 10 such as a substrate for a flat panel display device (FPD) A substrate support 103 on which the substrate 10 is mounted; a gas supply 105 for supplying different kinds of deposition gases to the substrate 10; And an upper exhaust part 154 for exhausting the exhaust gas.

For reference, in this embodiment, the substrate 10 may be a transparent substrate including a glass for a flat panel display such as a liquid crystal display (LCD) or a plasma display panel (PDP). However, the substrate 10 of the present invention is not limited thereto, and may be a silicon wafer for manufacturing a semiconductor device. In addition, the shape and size of the substrate 10 are not limited by the drawings, and may have substantially various shapes and sizes such as a circle and a square. The term 'deposition gas' in this embodiment means at least one kind of gas provided for depositing a thin film on the substrate 10, and includes a source including a constituent material of the thin film to be formed on the substrate 10 A reactance gas R1, R2, R3 chemically reacting with the source gas, and a purge gas for purifying the source gas and the reactance gas. (P1, P2, P3, P). In the drawing, 'E1, E2, E3, and E' denote exhaust passages. However, the present invention is not limited thereto, and the kind of the deposition gas may be substantially varied depending on the kind of the thin film to be deposited.

The substrate support 103 is formed, for example, so that a single substrate 10 is seated within the process chamber 101. [ A seat part 132 capable of being seated at a predetermined depth is formed on the surface of the body part 131 on which the substrate 10 is seated, A heater part 134 for heating the substrate supporting part 103 and an elevating shaft 135 for moving the substrate supporting part 103 up and down can be provided at the lower part.

A support pin 107 for supporting the substrate 10 during loading and unloading of the substrate 10 is provided at a lower portion of the substrate supporting portion 103. When the substrate supporting portion 103 is moved up and down, The support pin through hole 137 may be formed.

Meanwhile, a deposition space 111 is formed so that a predetermined gap is spaced between the substrate support 103 and the upper surface of the process chamber 101 so that the deposition process can be performed. A sealing step 113 for sealing the deposition space 111 may be formed at the edge of the substrate supporting part 103. A sealing flange 113 may also be formed in the process chamber 101 at a position where the sealing flange 113 is engaged with the sealing flange 113. However, the present invention is not limited to the drawings, and the shapes of the sealing jaw 133 and the sealing flange 113 can be substantially varied.

A plurality of inlets 511, 512 and 513 for introducing a deposition gas into the deposition space 111 are formed in the upper part of the process chamber 101 and are introduced into the deposition space 111 through the inlets 511, 512 and 513 A gas supplier 105 is provided to provide a plurality of different deposition gases. Here, in the embodiments of the present invention, a deposition process is performed by flowing a deposition gas in parallel with the substrate 10 in a state where the substrate 10 is horizontally seated. The gas supplier 105 is formed to horizontally flow the deposition gas in the deposition space 111.

For example, the process chamber 101 may be formed with at least one inlet (hereinafter, referred to as side inlet 511, 513) at an edge portion of the deposition space 111. The process chamber 101 may be provided with at least one inlet (hereinafter, referred to as an inner inlet 512) in the central portion of the deposition space 111. For example, the inlets 511, 512, and 513 may include any one or more of a plurality of holes, slots, or nozzles. Although the inlet ports 511, 512 and 513 are shown one by one in the drawing, the present invention is not limited thereto. The inlet ports 511, 512 and 513 may have a plurality of holes, slots or nozzles May be formed.

In the present embodiment, three inlet ports 511, 512 and 513 including two side inlet ports 511 and 513 and an inner inlet port 512 are illustrated. However, the present invention is not limited thereto, and the inlet ports 511 and 512, 513 may be substantially varied in location and number.

The side inlet ports 511 and 513 are inclined toward the inner side of the deposition space 111 so that the deposition gas flowing through the inlet ports 511, 512 and 513 can flow in the deposition space 111 in the horizontal direction . By forming the side inlet ports 511 and 513 obliquely, it is possible to prevent a vortex from occurring at the edge of the deposition space 111. [

The gas supplier 105 may include a plurality of gas supply sources 151, 152, and 153, a valve, and a controller 155 for controlling the plurality of gas supply sources 151, 152, and 153 so as to alternately provide different kinds of deposition gases . An upper exhaust portion 154 for exhausting the exhaust gases E1, E2, and E3 may be connected to the inlet ports 511, 512, and 513 in the deposition space 111.

For example, a gas for supplying the source gases S1, S2, S3, reactance gases R1, R2, R3 and purge gases P1, P2, P3, respectively, is supplied to each of the inlets 511, 512, The sources 151, 152, 153 and the upper exhaust 154 may be connected to each other.

A perforation 116 for introducing the purge gas P into the lower space of the substrate support 103 may be formed under the process chamber 101. [ Reference numeral 156 in the drawing is a lower purge portion 156 for providing purge gas P to the purge region 116. An exhaust port 117 for exhausting the exhaust gas E from below the substrate support 103 may be provided under the process chamber 101. The exhaust port 117 may be connected to a lower exhaust unit 157 for exhausting the exhaust gas E to the outside.

Meanwhile, the deposition apparatus 100 for a flat panel display according to embodiments of the present invention forms a thin film by providing a deposition gas in a horizontal direction in the deposition space 111, alternately provides a plurality of deposition gases, A thin film is formed according to a layer deposition process. The deposition apparatus 100 for a flat panel display according to embodiments of the present invention may be configured to provide deposition gas to the inlets 511, 512 and 513 of the plurality of inlets 511, 512 and 513, The deposition process is performed while alternately supplying the deposition gas to the deposition chambers 511, 512, and 513. During the deposition process, the exhaust gases E1, E2 and E3 are discharged from the upper part of the deposition space 111 through the respective inlets 511, 512 and 513. The deposition gas is provided at one inlet 511, 512, 513, and then provided so that the flow of the deposition gas can be made in the opposite direction.

Hereinafter, the operation of the deposition apparatus 100 for a flat panel display according to an embodiment of the present invention will be described in detail with reference to FIGS. 3 to 7. FIG.

First, as shown in FIG. 3, deposition gas (S1, R1, P1) is provided at the side inlet 511 of one of the side inlets 511, 513. In this case, the gas sources 151, 152, 153 connected to the first side inlet 511 are turned ON to provide the deposition gases S1, R1, P1 and the upper exhaust 154 is in the OFF state The exhaust gas E1 is not discharged. The gas supply sources 151, 152 and 153 connected to the other inlet ports 512 and 513 are turned OFF and the upper exhaust section 154 is turned ON to exhaust the exhaust gases E2 and E3.

3, the deposition gases S1, R1 and P1 are provided in the side inlet 511 and flow in the direction of the second side inlet 513 on the opposite side, and parallel to the substrate 10 in the horizontal direction And a thin film is formed on the substrate 10. Here, the deposition gas (S1, R1, P1) is supplied in the order of the source gas S1, the purge gas P1, the reactance gas R1 and the purge gas P1 through the first side inlet 511 do.

Next, as shown in Fig. 4, a deposition gas is provided in a direction opposite to the state shown in Fig. In detail, the gas sources 151, 152, 153 connected to the second side inlet 513 are turned ON to provide the deposition gases S3, R3, P3, and the upper exhaust 154 is in the OFF state do. The gas supply sources 151, 152 and 153 connected to the other inlet ports 511 and 512 are turned OFF and the upper exhaust section 154 is turned ON to exhaust the exhaust gases E1 and E2.

4, the deposition gases S2, R2 and P2 are provided in the second side inlet 513 and flow in the direction of the first side inlet 511 on the opposite side and are parallel to the substrate 10 A thin film is formed on the substrate 10 while flowing in the horizontal direction. Similarly, the deposition gases S3, R3, and P3 are supplied in the order of the source gas S3, the purge gas P3, the reactance gas R3, and the purge gas P3 through the second side inlet 513 do.

Next, as shown in FIG. 5, the gas sources 151, 152, 153 connected to the inner inlet port 512 are turned ON to provide the deposition gases S2, R2, P2, and the upper exhaust 154 Is in an OFF state. In this case, the gas supply sources 151, 152, 153 connected to the side inlet ports 511, 513 are turned OFF, and the upper exhaust section 154 is turned ON to exhaust the exhaust gases E1, E3.

5, the deposition gases S2, R2, and P2 are provided in the inner inlet port 512 to flow toward the side inlet ports 511 and 513 on both sides to form a thin film on the substrate 10. Here, the deposition gas S2, R2, P2 is provided in the order of the source gas S2, the purge gas P2, the reactance gas R2, and the purge gas P2 through the inner inlet port 512. [

Finally, as shown in Fig. 6, a deposition gas is provided in a direction opposite to the state shown in Fig. In detail, the gas sources 151, 152, 153 connected to the side inlets 511, 513 are turned ON to provide the deposition gases S1, S3, R1, R3, P1, P3, 154 are turned OFF. In this case, the gas supply sources 151, 152, and 153 connected to the inner inlet port 512 are turned OFF, and the upper exhaust portion 154 is turned ON to exhaust the exhaust gas E2.

6, deposition gases (S1, S3, R1, R3, P1, P3) are provided through the side inlet ports 511, 513 to flow in the direction of the inner inlet port 512, . Here, the deposition gas (plasma) is supplied through the side inlet ports 511 and 513 in the order of the source gases S1 and S3, the purge gases P1 and P3, the reactance gases R1 and R3, and the purge gases P1 and P3 S1, S3, R1, R3, P1, P3) are provided.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The present invention is not limited to the above-described embodiments, and various modifications and changes may be made thereto by those skilled in the art to which the present invention belongs. Accordingly, the spirit of the present invention should not be construed as being limited to the above-described embodiments, and all matters that are equivalent to or equivalent to the claims of the present invention are included in the scope of the present invention.

10: substrate
100: Deposition apparatus for flat panel display
101: Process chamber
111: deposition space
113: Sealing flange
115, 511, 512, 513: inlet
116: Fur District
117: Exhaust
103:
131: Body part
132:
133: sealing jaw
134: heater part
135: lifting shaft
137: Support pin through hole
105: Gas supply
151, 152, 153: gas supply source
154:
155:
156:
157: Lower exhaust part
107: Support pin

Claims (13)

A substrate support on which a single substrate is placed;
A process chamber in which a plurality of inlets for injecting the deposition gas into the deposition space are formed on the upper part of the process chamber;
A gas supplier for alternately providing a plurality of different deposition gases to the substrate via the inlet and providing the deposition gas to flow parallel to the substrate within the deposition chamber; And
An upper exhaust part for exhausting the exhaust gas from the deposition space through the inlet;
And a deposition apparatus for a flat panel display device.
The method according to claim 1,
Wherein the inlet comprises at least one selected from a plurality of holes, slots or nozzles.
The method according to claim 1,
Wherein the process chamber includes at least one side inlet port at a position corresponding to both edge portions of the substrate.
The method of claim 3,
Wherein the side inlet is inclined toward an inner direction of the deposition space.
The method of claim 3,
Wherein the process chamber has at least one inner inlet at a position corresponding to a central portion of the substrate.
The method according to claim 1,
And a lower portion of the process chamber is further provided with a perforation for introducing purge gas into the lower portion of the substrate support portion and an exhaust port for exhausting exhaust gas from the lower portion of the substrate support portion.
The method according to claim 6,
And a lower exhaust portion for exhausting the exhaust gas to the outside is connected to the exhaust port.
The method according to claim 1,
Wherein the substrate supporting portion is formed with a sealing tack portion for sealing the deposition space,
And a sealing flange engaging with the sealing step is formed in the process chamber.
9. The method of claim 8,
Wherein the substrate supporting portion is formed with a sealing tack portion for sealing the deposition space,
And a sealing flange engaging with the sealing step is formed in the process chamber.
A gas supply source for alternately supplying a deposition gas and an upper exhaust unit for exhausting exhaust gas from the inside of the process chamber are respectively connected to a plurality of inlets provided in the upper portion of the process chamber,
A flat panel display for alternately providing the deposition gas to the at least one inlet port of the plurality of inlets and for horizontally flowing to the substrate to form a thin film according to the atomic layer deposition process and exhausting the exhaust gas from the remaining inlets; Deposition method for devices.
11. The method of claim 10,
The inlet includes at least one side inlet at an edge portion of the process chamber and at least one inner inlet at a central portion of the process chamber,
The gas supply source connected to the inlet of either the side inlet or the inner inlet is turned ON, the upper exhaust is turned OFF, the gas supply source connected to the remaining inlets is OFF, and the upper exhaust is turned ON ,
And the ON / OFF of the gas supply source is alternately performed at the plurality of inlets.
12. The method of claim 11,
Wherein after the deposition gas is provided at one inlet, the deposition gas is then allowed to flow in the opposite direction.
13. The method of claim 12,
When deposition gas is provided at the one side inlet, a deposition gas is provided through the other side inlet, which is next to the side inlet,
Wherein a deposition gas is provided at the inner inlet after the deposition gas is provided at the side inlet.

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