KR102186443B1 - Deposition apparatus - Google Patents

Abstract

A deposition apparatus including a spin nozzle unit capable of depositing a thin film on a substrate for a flat panel display device and improving deposition quality is disclosed. The deposition apparatus for a substrate for a flat panel display device includes a cylindrical chamber in which a plurality of substrates are accommodated to provide a space in which a thin film deposition process is performed, and a gas powder provided on the outer circumference of the chamber to provide different types of deposition gases, respectively. And a substrate support part provided inside the chamber and mounted on the plurality of substrates, and rotating the substrate as it rotates with respect to a central axis of the chamber.

Description

Evaporation apparatus {DEPOSITION APPARATUS}

The present invention relates to an apparatus for depositing a substrate for a flat panel display device, and to a deposition apparatus for forming a thin film by an atomic layer deposition method in order to uniformly form a thin film on a large-area substrate like a substrate for a flat panel display device.

Flat panel displays (FPD) include liquid crystal displays (LCDs), plasma display panels (PDPs), organic light emitting diodes (OLEDs), and the like. Among them, organic light-emitting display devices are attracting attention as a next-generation display device in terms of characteristics such as self-emission, wide viewing angle, high-speed response, low power consumption, and the like and can be made ultra-thin. The organic light emitting display device is typically a first electrode corresponding to an anode on a glass substrate, a hole injection layer, a hole transfer layer, a light emitting layer, and an electron transfer layer. layer) and an electron injection layer, and a second electrode corresponding to a cathode.

Organic thin film formation methods include vacuum deposition, sputtering, ion-beam deposition, pulsed-laser deposition, molecular beam deposition, chemical vapor deposition (CVD), and spin coater. ) Can be used.

On the other hand, an encapsulating thin film is required to protect the organic thin film from moisture, and methods such as vacuum deposition, sputtering, chemical vapor deposition, and atomic layer deposition (ALD) can be used to form such an encapsulating thin film. have.

Embodiments of the present invention are to provide a deposition apparatus capable of uniformly depositing a thin film on a large-area substrate, such as a substrate for a flat panel display device, using an atomic layer deposition method.

According to embodiments of the present invention for achieving the object of the present invention described above, the deposition apparatus includes a cylindrical chamber that provides a space in which a process in which a thin film is deposited by receiving a plurality of substrates, is provided on the outer peripheral surface of the chamber. And a gas injection unit for providing different types of deposition gases, respectively, and a substrate support unit provided inside the chamber to mount the plurality of substrates and rotate the substrate as it rotates with respect to the central axis of the chamber. do.

According to one side, the substrate support portion is provided inside the body portion at a position corresponding to the body portion, the substrate holding portion on which the substrate is seated and the substrate holding portion provided on the surface of the body portion to heat the substrate. It is configured to include a heater. For example, the substrate holding unit may hold the substrate by an electrostatic method or a vacuum. In addition, the substrate holding portion may be concave to a predetermined depth in the body portion. Further, the substrate support may have a polygonal column shape having a plurality of surfaces on which the substrate is mounted one by one and having a height corresponding to the length of the chamber. In addition, a mixing prevention guard for preventing mixing of the deposition gases with each other in the chamber may be provided, and the mixing prevention guard may be provided around an edge of the substrate support.

According to one side, a plasma generating unit for generating plasma is further provided in the chamber, and the plasma generating unit is provided by introducing a reactance gas from the deposition gas to excite it in a plasma state. For example, the plasma generating unit generates plasma in a capacitively coupled plasma (CCP) method, a primary electrode and a secondary electrode are provided between the substrate support and the gas injection unit, and the primary Plasma may be generated between the electrode and the secondary electrode. In addition, the plasma generator may generate plasma by applying power to the primary and secondary electrodes only while the reactance gas is provided to the substrate. In addition, the plasma generating unit, the primary electrode is formed with a flow path for introducing the reactance gas into the space between the primary electrode and the secondary electrode, the plasma generated by the secondary electrode to the substrate A flow path for providing may be formed.

According to one side, the plasma generator is provided with a coil antenna that generates plasma in an inductively coupled plasma (ICP) method and generates an induction electric field at an injection port providing the reactance gas, and the reactance gas Can be provided while excitation in a plasma state.

According to one side, the gas injection unit may include a plurality of injection ports disposed on the outer circumferential surface of the chamber at regular intervals and providing respective deposition gases.

According to one side, both ends of the chamber may be provided with exhaust units that suck and discharge exhaust gas from inside the chamber.

According to embodiments of the present invention, as the substrate rotates inside the circular chamber, different types of deposition gases are sequentially provided to the substrate, and the thin film is deposited by the atomic layer deposition method, so that a homogeneous thin film can be formed on the substrate. have.

1 is a perspective view of a deposition apparatus according to an embodiment of the present invention.
2 is a cross-sectional view of a deposition apparatus taken along line I-I in FIG. 1.
3 is a cross-sectional view of a deposition apparatus taken along line II-II in FIG. 1.
4 is a view for explaining a CCP type plasma generator according to an embodiment of the present invention.
5 is a view for explaining an ICP type plasma generation unit according to an embodiment of the present invention.
6 is a cross-sectional view illustrating a substrate support according to an embodiment of the present invention.
7 is a cross-sectional view of essential portions of the substrate support of FIG. 6.
8 is a plan view of the substrate support of FIG. 6.
9 to 13 are views for explaining a substrate support according to modified embodiments of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited or limited by the embodiments. In describing the present invention, detailed descriptions of known functions or configurations may be omitted to clarify the subject matter of the present invention.

Hereinafter, an apparatus 100 for depositing a substrate for a flat panel display device according to embodiments of the present invention will be briefly described with reference to FIGS. 1 to 8. For reference, FIG. 1 is a perspective view schematically showing the configuration of a deposition apparatus 100 according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view of the deposition apparatus 100 taken along line I-I in FIG. , FIG. 3 is a cross-sectional view of the deposition apparatus 100 taken along line II-II in FIG. 1.

The deposition apparatus 100 is a device capable of processing a large-area substrate 10 such as a substrate for a flat panel display device (FPD), and is an apparatus for forming a thin film by an atomic layer deposition method. The deposition apparatus 100 includes a cylindrical chamber 101 that accommodates a plurality of substrates 10 to provide a space in which a deposition process is performed, and is disposed at equal intervals along the outer circumferential surface of the chamber 101 on the substrate 10. A substrate support that rotates the substrate 10 as the gas injection unit 103 and a plurality of substrates 10 are mounted and rotates with the center axis of the chamber 101 as the rotation axis 155 for providing different types of deposition gases. It consists of 105.

For reference, in this embodiment, the'substrate 10' may be a transparent substrate including glass for a flat panel display device such as a liquid crystal display (LCD) and a plasma display panel (PDP). However, the substrate 10 of the present invention is not limited thereto, and may be a silicon wafer for manufacturing a semiconductor device. In addition, the shape and size of the substrate 10 are not limited by the drawings, and may have substantially various shapes and sizes, such as a circle and a square. In addition, the term'deposition gas' in the present embodiment includes at least one gas provided to deposit a thin film on the substrate 10, and includes a material constituting a thin film to be formed on the substrate 10. A purge gas for purging the source gas (S), a reactance gas (R) that chemically reacts with the source gas (S), and the source gas (S) and the reactance gas (R) )(P). However, the present invention is not limited thereto, and the type of deposition gas may be substantially variously changed according to the type of thin film to be deposited.

The chamber 101 is formed in a cylindrical shape, has a length corresponding to the substrate 10, and may have a diameter corresponding to the size of the substrate support 105 in cross section.

The gas injection unit 103 includes injection ports 131, 132, 133, and 134 disposed at equal intervals along the periphery of the outer circumferential surface of the chamber 101. For example, four injection ports 131, 132, 133, 134 are disposed at 90° intervals. In addition, the injection ports 131, 132, 133, 134 are formed in a part of the circumference of the chamber 101, as shown in FIG. 1, and are formed to extend along the length direction of the chamber 101. In this embodiment, four injection ports 131, 132, 133, 134 are illustrated, but the present invention is not limited by the drawings, and the number of injection ports 131, 132, 133, 134 is the number of deposition gases It can be changed in various ways according to. For example, four or eight spray ports may be provided at equal intervals.

The spray ports 131, 132, 133, and 134 are spray ports 131 that provide a source gas (S) and a purge gas to provide deposition gas to the rotating substrate 10 according to the atomic layer deposition sequence. An injection port 132 providing P), an injection port 133 providing a reactance gas R, and an injection port 134 providing a purge gas P may be provided.

In addition, an exhaust part 135 is provided to discharge exhaust gas generated inside the chamber 101, and the exhaust part 135 is provided at both ends of the chamber 101. The exhaust unit 135 is a vacuum exhaust unit in which exhaust gas is sucked and exhausted through both ends of the chamber 101.

The substrate support portion 105 is provided in the body portion 151 constituting the body and the substrate holding portion 152 and the body portion 151 formed on the surface of the body portion 151 to mount and fix the substrate 10 It is configured to include a heater unit 153 for heating the substrate 10.

The heater units 153 may be provided at positions corresponding to the substrate holding units 152 within the body unit 151. When the size of the substrate support portion 105 increases, the heater portion 153 is provided in each of the substrate holding portions 152.

The substrate holding unit 152 may hold the substrate by an electrostatic method or a vacuum. For example, as shown in FIG. 7, when the substrate gripping part 152 is a vacuum type, the substrate gripping part 152 has a surface of the body part 151 recessed to a predetermined depth in order to adsorb the substrate 10. The formed groove 1521 may be formed, and a heat-resistant resin 1522 may be filled in the groove 1521. In addition, as shown in FIG. 8, the substrate gripping portion 152 may have a grating-shaped groove formed at a predetermined interval for an area corresponding to the substrate 10. On the other hand, even when the substrate holding portion 152 holds the substrate 10 by an electrostatic method, as shown in FIG. 8, it may be arranged in a predetermined grid shape. However, the present invention is not limited by the drawings, and the shape of the substrate holding portion 152 may be variously changed.

A mask 20 for forming a thin film having a predetermined pattern on the substrate 10 may be provided on a surface of the substrate 10 facing the gas injection unit 103. The mask 20 serves to selectively block the deposition gas provided from the gas injection unit 103 so that a patterned thin film corresponding to the pattern of the mask is deposited on the substrate 10.

The deposition apparatus 100 may include plasma generation units 110 and 120 for generating plasma to increase the reactivity of the deposition gas. Here, the plasma generating units 110 and 120 are provided to provide a reactance gas R by converting the reactance gas R from the deposition gas into plasma.

Meanwhile, the plasma generators 110 and 120 may generate plasma using a capacitively coupled plasma (CCP) method or an inductively coupled plasma (ICP) method. .

4 shows a plasma generating unit 110 of the CCP method. Referring to FIG. 4, the CCP type plasma generator 110 is provided above the substrate 10, that is, between the substrate support portion 105 and the gas injection portion 103. In addition, in the CCP type plasma generator 110, the primary electrode 111 and the secondary electrode 112 are provided in parallel at a predetermined distance apart from each other, and when power is applied, the primary electrode 111 and the secondary electrode ( An electric field for 112) is formed, and the reactance gas R introduced therein is excited in a plasma state and provided to the substrate 10. Here, a flow path for introducing reactance gas R into the space between the primary electrode 111 and the secondary electrode 112 may be formed in the primary electrode 111. In addition, a flow path for providing plasma generated between the primary electrode 111 and the secondary electrode 112 to the substrate 10 may be formed in the secondary electrode 112. For example, a plurality of holes or slits for introducing reactance gas R may be formed in the primary electrode 111, and a plurality of holes or slits for passing plasma through the secondary electrode 112 may be formed. Can be formed.

Meanwhile, the CCP-type plasma generator 110 is selectively applied with power to generate plasma only for the reactance gas R. That is, power is applied to the CCP-type plasma generator 110 at a position corresponding to the injection port 133 where the reactance gas R is provided, and the reactance gas R is the CCP-type plasma generator 110 It is excited in a plasma state while passing through and is provided to the substrate 10. In FIG. 4, power is applied to the plasma generator 110 located above, and the power is released to the plasma generator 110 located below.

5 shows the plasma generating unit 120 of the ICP method. Referring to FIG. 5, the ICP-type plasma generator 120 includes a coil antenna 121 for generating an induced electric field, and the coil antenna 121 is provided with a reactance gas R among the gas injection units 103. It is provided on the supply flow path of the reactance gas R in the spray port 133 to be used.

Hereinafter, an operation of the gas injection unit 103 according to an embodiment of the present invention will be described.

First, in the state shown in Fig. 2, the substrate 10 is again provided with a source gas S and a reactance gas R, respectively. Hereinafter, for convenience of description, the substrate 10 provided with the source gas S, that is, the substrate 10 shown below in FIG. 2 is referred to as a first substrate, and the first substrate and the rear side thereof , The substrate 10 provided thereon is referred to as a second substrate. In addition, since the mixing prevention guard 107 is provided around the substrate support part 105 and the purge gas P is injected between the mixing prevention guard 107 and the chamber 101, the source gas S and/ Alternatively, the reactance gas R may be prevented from flowing to the upper and lower portions of the substrate support portion 105, thereby preventing mixing with each other.

Next, when the substrate support 105 is rotated by 90° in the above-described state, the substrate 10 is provided with a purge gas (P), respectively, and a source gas (S) and an injection port provided with a reactance gas (R) ( 131, 133 are blocked by the mixing prevention guard 107.

Next, when the substrate support 105 rotates 180°, the source gas S and the reactance gas R are again provided to the substrate 10. Unlike the above-described state, the first substrate 10 has reactance. A gas R is provided, and a source gas S is provided to the second substrate 10.

Next, when the substrate support 105 rotates by 270°, the purge gas P is provided to the substrate 10, respectively.

As such, when the substrate support 105 rotates once, the source gas (S), the purge gas (P), the reactance gas (R), and the purge gas (P) are sequentially provided based on the first substrate 10. One cycle of the layer deposition process is completed. In addition, as the substrate support 105 is continuously rotated, the above-described steps are repeatedly performed, and a plurality of cycles of deposition gas is provided to the substrate 10 to form a multi-layered thin film and a thin film having a predetermined thickness. Here, the above-described embodiments are for convenience of description, and the order of the deposition gas provided to the substrate 10 is not necessarily limited to the above-described order.

Meanwhile, in the above-described embodiments, a form in which the two substrates 10 are mounted on both sides of the substrate support 105 has been described, but the present invention is not limited by the drawings, and the shape of the substrate support 105 Silver can be applied in a shape capable of mounting a plurality of substrates 10 or more.

For example, as shown in FIGS. 9 to 13, the shape of the substrate support may be variously changed. The embodiments shown in FIGS. 9 to 13 are examples for explaining various shapes of the substrate support, and are the same as those of the above-described embodiments except for the shape of the substrate support. Accordingly, only the shape of the substrate support will be briefly described below.

In FIG. 9, the substrate support portion 215 has a triangular column shape in which a cross section of the substrate support portion 215 is triangular so that three substrates 10 can be mounted, and the substrate 10 may be mounted on three side surfaces of the substrate support portion 215. In addition, the anti-mixing guard 217 may be provided at each of the three corners of the substrate support 215 (in the cross-section shown in FIG. 9, a triangular vertex portion).

In FIG. 10, the substrate support 225 may have a square column shape having a rectangular cross section so that four substrates 10 can be mounted. In addition, the anti-mixing guard 227 may be provided at each of the four corner portions of the substrate support 225.

In FIG. 11, the substrate support part 235 has a pentagonal column shape having a pentagonal cross section so that five substrates 10 can be mounted, and a mixing prevention guard 237 may be provided at each corner.

In FIG. 12, the substrate support part 245 has a hexagonal column shape having a hexagonal cross section so that six substrates 10 can be mounted, and six anti-mixing guards 247 may be provided at each corner.

In addition, in FIG. 13, the substrate support 255 may have a pinwheel shape to mount eight substrates 10. Further, as shown in FIG. 13, a mixing prevention guard 247 may be provided at each end of the substrate support 255. In the case of the substrate support portion 255 of FIG. 13, four body portions 2551 having two substrates 10 mounted on both sides thereof are combined at intervals of 90°. Accordingly, if the substrate support portion 255 of FIG. 13 is further deformed, the number of body portions 2551 on which the substrate 10 is mounted is increased by two, and the number of substrates 10 that can be processed at equal intervals is increased. The number can be increased further. For example, if 6 body parts 2551 are provided at 60° intervals, 12 substrates 10 can be processed at the same time, and if 8 body parts 2551 are provided at 45° intervals, 16 sheets at the same time. The substrate 10 can be processed.

However, the present invention is not limited by the drawings, and the substrate support portion may be changed to substantially various shapes other than those shown in the drawings.

As described above, in the present invention, specific matters such as specific components, etc., and limited embodiments and drawings have been described, but this is provided to help a more general understanding of the present invention. In addition, the present invention is not limited to the above-described embodiments, and various modifications and variations are possible from these descriptions by those of ordinary skill in the field to which the present invention belongs. Therefore, the spirit of the present invention is limited to the above-described embodiments and should not be defined, and all things that are equivalent or equivalent to the claims as well as the claims to be described later belong to the scope of the present invention.

10: substrate
20: mask
100: evaporation device
101: chamber
103: gas injection unit
131, 132, 133, 134: spray port
135: exhaust
105: substrate support
151: body part
152: substrate holding portion
153: heater part
155: rotation axis
107: mix prevention guard
110: CCP plasma generator
111: primary electrode
112: secondary electrode
120: ICP plasma generator
121: coil antenna

Claims (13)

A cylindrical chamber accommodating a plurality of substrates and providing a space in which a process in which a thin film is deposited is performed;
A gas injection unit provided on an outer circumferential surface of the chamber to provide different types of deposition gases, respectively;
A substrate support part provided inside the chamber to mount the plurality of substrates, and rotating the substrate as it rotates based on a central axis of the chamber; And
A mixing prevention guard provided around an edge of the substrate support and preventing the deposition gas from flowing to the upper and lower portions of the substrate support and mixing with each other in the chamber;
A deposition apparatus comprising a.
The method of claim 1,
The substrate support,
Body part;
A substrate holding portion provided on a surface of the body portion on which the substrate is seated; And
A heater unit provided inside the body at a position corresponding to the substrate holding unit to heat the substrate;
A deposition apparatus comprising a.
The method of claim 2,
The substrate holding unit is a deposition apparatus for holding the substrate by an electrostatic method or a vacuum.
The method of claim 2,
The deposition apparatus in which the substrate holding portion is concaved at a predetermined depth in the body portion.
The method of claim 2,
The substrate support portion has a plurality of surfaces on which the substrate is mounted one by one, and has a polygonal column shape having a height corresponding to the length of the chamber.
delete The method of claim 1,
Further comprising a plasma generator for generating plasma in the chamber,
A deposition apparatus for providing the plasma generator by introducing a reactance gas from the deposition gas to excite it in a plasma state.
The method of claim 7,
The plasma generator generates plasma in a capacitively coupled plasma (CCP) method,
A deposition apparatus comprising: a primary electrode and a secondary electrode between the substrate support portion and the gas injection portion, and generating plasma between the primary electrode and the secondary electrode.
The method of claim 8,
The plasma generating unit generates plasma by applying power to the primary and secondary electrodes only while the reactance gas is supplied to the substrate.
The method of claim 8,
The plasma generator includes a flow path for introducing the reactance gas into the space between the primary electrode and the secondary electrode in the primary electrode, and providing the plasma generated by the secondary electrode to the substrate. Evaporation apparatus with a flow path for.
The method of claim 7,
The plasma generator generates plasma in an Inductively Coupled Plasma (ICP) method,
A deposition apparatus is provided with a coil antenna for generating an induced electric field at an injection port providing the reactance gas, and providing the reactance gas while excitation in a plasma state.
The method of claim 1,
The gas injection unit is disposed on the outer circumferential surface of the chamber at regular intervals, and a deposition apparatus having a plurality of injection ports providing respective deposition gases.
The method of claim 1,
Evaporation apparatus having exhaust units at both ends of the chamber to suck and discharge exhaust gas from inside the chamber.

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