KR20130067600A - Atomic layer deposition apparatus providing direct palsma - Google Patents

Atomic layer deposition apparatus providing direct palsma Download PDF

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KR20130067600A
KR20130067600A KR1020110134326A KR20110134326A KR20130067600A KR 20130067600 A KR20130067600 A KR 20130067600A KR 1020110134326 A KR1020110134326 A KR 1020110134326A KR 20110134326 A KR20110134326 A KR 20110134326A KR 20130067600 A KR20130067600 A KR 20130067600A
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plasma
substrate
atomic layer
electrode
gas
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KR1020110134326A
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Korean (ko)
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박성현
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주식회사 케이씨텍
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets

Abstract

PURPOSE: An atomic layer deposition device providing direct plasma is provided to improve the quality of a thin film by providing the direct plasma. CONSTITUTION: A process chamber(101) accommodates multiple substrates. A susceptor(102) rotates the substrate. A gas injector(103) is composed of a plurality of injection areas to provide deposition gases. A direct plasma provider is formed on the gas injector and excites a corresponding gas to a plasma state.

Description

다이렉트 플라즈마 형성 원자층 증착장치{ATOMIC LAYER DEPOSITION APPARATUS PROVIDING DIRECT PALSMA}Direct plasma forming atomic layer deposition apparatus {ATOMIC LAYER DEPOSITION APPARATUS PROVIDING DIRECT PALSMA}

본 발명은 원자층 증착장치에 관한 것으로, 기판에 다이렉트 플라즈마를 제공하여 박막을 증착하는 다이렉트 플라즈마 형성 원자층 증착장치를 제공하기 위한 것이다.
The present invention relates to an atomic layer deposition apparatus, and to provide a direct plasma forming atomic layer deposition apparatus for depositing a thin film by providing a direct plasma to the substrate.

일반적으로, 반도체 기판이나 글래스 등의 기판 상에 소정 두께의 박막을 증착하기 위해서는 스퍼터링(sputtering)과 같이 물리적인 충돌을 이용하는 물리 기상 증착법(physical vapor deposition, PVD)과, 화학 반응을 이용하는 화학 기상 증착법(chemical vapor deposition, CVD) 등을 이용한 박막 제조 방법이 사용된다.In general, in order to deposit a thin film having a predetermined thickness on a substrate such as a semiconductor substrate or glass, physical vapor deposition (PVD) using physical collision such as sputtering and chemical vapor deposition using chemical reaction thin film manufacturing method using (chemical vapor deposition, CVD) or the like is used.

반도체 소자의 디자인 룰(design rule)이 급격하게 미세해짐으로써 미세 패턴의 박막이 요구되었고 박막이 형성되는 영역의 단차 또한 매우 커지게 되었다. 이에 원자층 두께의 미세 패턴을 매우 균일하게 형성할 수 있을 뿐만 아니라 스텝 커버리지(step coverage)가 우수한 원자층 증착방법(atomic layer deposition, ALD)의 사용이 증대되고 있다.As the design rule of the semiconductor device is drastically fine, a thin film of a fine pattern is required, and the step of the region where the thin film is formed is also very large. Accordingly, the use of atomic layer deposition (ALD), which is capable of forming a very fine pattern of atomic layer thickness very uniformly and has excellent step coverage, has been increasing.

원자층 증착방법(ALD)은 기체 분자들 간의 화학 반응을 이용한다는 점에 있어서 일반적인 화학 기상 증착방법과 유사하다. 하지만, 통상의 화학 기상 증착(CVD) 방법이 다수의 기체 분자들을 동시에 프로세스 챔버 내로 주입하여 기판 상부에서 발생된 반응 생성물을 기판에 증착하는 것과 달리, 원자층 증착방법은 하나의 기체 물질을 프로세스 챔버 내로 주입한 후 이를 퍼지(purge)하여 가열된 기판의 표면에 물리적으로 흡착된 기체만을 잔류시키고, 이후 다른 기체 물질을 주입함으로써 기판 표면에서 발생되는 화학 반응 생성물을 증착시킨다는 점에서 상이하다. 이러한 원자층 증착방법을 통해 구현되는 박막은 스텝 커버리지 특성이 매우 우수하며 불순물 함유량이 낮은 순수한 박막을 구현하는 것이 가능한 장점을 갖고 있어 현재 널리 각광받고 있다.The atomic layer deposition method (ALD) is similar to the general chemical vapor deposition method in that it uses chemical reactions between gas molecules. However, unlike conventional chemical vapor deposition (CVD) methods injecting a plurality of gas molecules into the process chamber at the same time to deposit a reaction product generated on the substrate onto the substrate, atomic layer deposition method is a process chamber to deposit a single gaseous material It is different in that it is injected into and then purged to leave only the gas that is physically adsorbed on the surface of the heated substrate, followed by the deposition of other gaseous materials to deposit the chemical reaction product generated on the substrate surface. The thin film implemented through such an atomic layer deposition method has a very good step coverage characteristics and has the advantage that it is possible to implement a pure thin film with a low impurity content.

한편, 기존의 원자층 증착장치는 스루풋(throughput)을 향상시키기 위해서 다수 장의 기판에 대해 동시에 증착공정이 수행되는 세미 배치 타입(semi-batch type)이 개시되어 있다. 통상적으로 세미 배치 타입 원자층 증착장치 내부에는 서로 다른 종류의 증착가스가 분사되고, 가스분사부 또는 서셉터의 고속 회전에 의해 기판이 순차적으로 증착가스가 분사된 영역을 통과함에 따라 기판 표면에서 증착가스 사이의 화학 반응이 발생하여 반응 생성물이 증착된다. 그리고 기존의 원자층 증착공정은 제1 소스가스 제공, 퍼지, 제2 소스가스 제공 및 퍼지 단계로 이루어진 사이클이 다수 회 반복되어 수행된다.Meanwhile, the conventional atomic layer deposition apparatus discloses a semi-batch type in which a deposition process is simultaneously performed on a plurality of substrates in order to improve throughput. Typically, different types of deposition gases are injected into the semi-batch type atomic layer deposition apparatus, and the substrate is deposited on the surface of the substrate as the substrate passes through the regions where the deposition gases are sequentially injected by the high speed rotation of the gas injection unit or the susceptor. Chemical reactions between the gases take place and the reaction products are deposited. In the conventional atomic layer deposition process, a cycle consisting of a first source gas supply, a purge, a second source gas supply, and a purge step is repeated a plurality of times.

그런데, 기존의 원자층 증착장치는 소스가스의 반응성이 낮아서 증착 시간이 오래 걸리고 생산성이 낮은 문제점이 있다. 또한, 기판에 흡착되지 않은 소스가스는 폐기되므로 소스가스의 소모량이 증가하고 생산 비용이 증가하게 된다.
However, the conventional atomic layer deposition apparatus has a problem that the deposition time is long and productivity is low because the reactivity of the source gas is low. In addition, since the source gas that is not adsorbed on the substrate is discarded, the consumption of the source gas increases and the production cost increases.

본 발명의 실시예들에 따르면 원자층 증착장치에서 박막의 품질을 향상시킬 수 있도록 다이렉트 플라즈마를 제공할 수 있는 원자층 증착장치를 제공하기 위한 것이다.
According to embodiments of the present invention is to provide an atomic layer deposition apparatus that can provide a direct plasma to improve the quality of the thin film in the atomic layer deposition apparatus.

상술한 본 발명의 실시예들에 따른 다이렉트 플라즈마 제공 원자층 증착장치는, 다수의 기판을 수용하여 박막이 증착되는 세미배치(semi-batch) 방식으로 수행되고, 다수의 기판을 수용하여 박막을 증착하는 공간을 제공하는 프로세스 챔버, 상기 프로세스 챔버 내부에 구비되어 상기 기판이 수평으로 안착되며, 상기 기판을 공전시키는 서셉터, 상기 프로세스 챔버 상부에 구비되어 상기 기판에 서로 다른 종류의 증착가스를 각각 제공하는 다수의 분사영역으로 분할 형성된 가스분사부 및 상기 가스분사부에 구비되되, 상기 분사영역 중에서 프리커서 가스 및/또는 리액턴스 가스가 제공되는 영역에 구비되어 해당 가스를 플라즈마 상태로 여기시키고 다이렉트 플라즈마를 제공하는 플라즈마 제공부를 포함하여 구성된다.The direct plasma providing atomic layer deposition apparatus according to the embodiments of the present invention described above is performed in a semi-batch manner in which a thin film is deposited by receiving a plurality of substrates, and depositing a thin film by receiving a plurality of substrates. A process chamber that provides a space to be provided, a substrate mounted inside the process chamber to horizontally seat the susceptor for revolving the substrate, and an upper portion of the process chamber to provide different types of deposition gases to the substrate The gas injection unit and the gas injection unit which are divided into a plurality of injection zones are provided in an area in which the precursor gas and / or reactance gas are provided among the injection zones to excite the corresponding gas in a plasma state and direct plasma. It comprises a plasma providing unit for providing.

일 측에 따르면, 상기 플라즈마 제공부는, 증착가스가 주입되어 플라즈마 상태로 여기되는 공간을 형성하는 플라즈마 챔버, 상기 플라즈마 챔버 상부에 구비되어 플레이트 형태를 갖고 전원이 인가되는 전원 전극, 상기 전원 전극 하부에 상기 전원 전극과 평행하게 배치되어 접지가 연결되고, 상기 플라즈마 챔버 내부에서 발생한 플라즈마 입자를 기판에 제공하도록 개구부가 형성된 접지 전극을 포함하여 구성된다. 여기서, 상기 개구부는 플라즈마 챔버 내부의 플라즈마 입자 중에서 라디칼과 이온을 전부 기판에 제공할 수 있는 개구 면적을 갖는다. 또한, 상기 개구부는 개구된 부분이 원형 또는 다각형 형상을 가질 수 있다. 또는, 상기 개구부는 슬릿 형상을 갖고, 하나 또는 다수의 슬릿으로 구성될 수 있다. 그리고 상기 전원 전극과 상기 접지 전극을 지지하고, 상기 플라즈마 챔버의 측벽을 형성하는 지지 구조물이 구비되고, 상기 지지 구조물은 유전체 재질로 형성될 수 있다.According to one side, the plasma providing unit, a plasma chamber to form a space in which the deposition gas is injected to be excited in the plasma state, the power electrode is provided in the upper portion of the plasma chamber having a plate shape, the power is applied, the lower portion of the power electrode A ground electrode disposed in parallel with the power supply electrode and connected to a ground, and having an opening formed to provide plasma particles generated in the plasma chamber to the substrate. Here, the opening has an opening area capable of providing all of the radicals and ions to the substrate among the plasma particles inside the plasma chamber. In addition, the opening portion may have a circular or polygonal shape. Alternatively, the opening may have a slit shape and be composed of one or a plurality of slits. A support structure may be provided to support the power supply electrode and the ground electrode and to form sidewalls of the plasma chamber. The support structure may be formed of a dielectric material.

일 측에 따르면, 상기 플라즈마 제공부는, 전원이 인가되고 원통형의 전원 전극 및 상기 전원 전극과 이격되어 접지가 연결되고, 상기 기판을 향하는 하부에 개구부가 형성된 원통형의 접지 전극을 포함하여 구성된다. 여기서, 상기 전원 전극과 상기 접지 전극이 이격된 공간 사이로 증착가스가 주입되어 플라즈마 상태로 여기되고, 상기 플라즈마 제공부 하부에 형성된 개구부를 통해서 상기 플라즈마 입자를 상기 기판에 제공한다. 예를 들어, 상기 플라즈마 제공부는 상기 전원 전극 외부에 일정 간격 이격되어 상기 접지 전극이 구비된다. 그리고 상기 접지 전극 하부가 일부 절단되어 상기 플라즈마를 상기 기판에 제공할 수 있도록 개구부가 형성된다. 또한, 상기 전원 전극과 상기 접지 전극은 상기 기판의 직경 방향을 따라 배치될 수 있다.
According to one side, the plasma providing unit is configured to include a cylindrical power supply electrode, a cylindrical power supply electrode and a cylindrical ground electrode spaced apart from the power supply electrode, the ground is formed in the lower portion toward the substrate. Here, the deposition gas is injected into the space spaced apart from the power electrode and the ground electrode to be excited in a plasma state, and the plasma particles are provided to the substrate through an opening formed under the plasma providing unit. For example, the plasma providing unit is provided with the ground electrode spaced apart from the power electrode by a predetermined interval. In addition, an opening is formed to partially cut the ground electrode to provide the plasma to the substrate. In addition, the power supply electrode and the ground electrode may be disposed along a radial direction of the substrate.

이상에서 본 바와 같이, 본 발명의 실시예들에 따르면, 원자층 증착장치에서 다이렉트 플라즈마를 제공하여 박막의 품질을 향상시킬 수 있다.
As described above, according to embodiments of the present invention, it is possible to improve the quality of the thin film by providing a direct plasma in the atomic layer deposition apparatus.

도 1은 본 발명의 일 실시예에 따른 원자층 증착장치의 일 예를 설명하기 위한 단면도이다.
도 2는 도 1의 원자층 증착장치에서 플라즈마 제공부의 구조 및 동작을 설명하기 위한 요부 단면도이다.
도 3과 도 4는 는 도 1의 원자층 증착장치에서 플라즈마 제공부의 구조를 설명하기 위한 평면도들이다.
도 5는 본 발명의 변형 실시예에 따른 원자층 증착장치의 단면도이다.
도 6은 도 5의 원자층 증착장치에서 플라즈마 제공부의 구조 및 동작을 설명하기 위한 요부 단면도이다.
도 7은 도 5의 원자층 증착장치에서 플라즈마 제공부의 구조를 설명하기 위한 평면도이다.1 is a cross-sectional view for explaining an example of an atomic layer deposition apparatus according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view illustrating main parts of the structure and operation of the plasma providing unit in the atomic layer deposition apparatus of FIG. 1.
3 and 4 are plan views illustrating the structure of the plasma providing unit in the atomic layer deposition apparatus of FIG.
5 is a cross-sectional view of an atomic layer deposition apparatus according to a modified embodiment of the present invention.
6 is a cross-sectional view illustrating main parts of the structure and operation of the plasma providing unit in the atomic layer deposition apparatus of FIG. 5.
FIG. 7 is a plan view illustrating a structure of a plasma providing unit in the atomic layer deposition apparatus of FIG. 5.

이하 첨부된 도면들을 참조하여 본 발명의 실시예들을 상세하게 설명하지만, 본 발명이 실시예에 의해 제한되거나 한정되는 것은 아니다. 본 발명을 설명함에 있어서, 공지된 기능 혹은 구성에 대해 구체적인 설명은 본 발명의 요지를 명료하게 하기 위하여 생략될 수 있다.DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited to or limited by the embodiments. In describing the present invention, a detailed description of well-known functions or constructions may be omitted for clarity of the present invention.

이하, 도 1 내지 도 4를 참조하여 본 발명의 실시예들에 따른 원자층 증착장치(100)에 대해서 상세하게 설명한다. 참고적으로, 도 1은 본 발명의 일 실시예에 따른 원자층 증착장치(100)의 일 예를 설명하기 위한 단면도이고, 도 2는 도 1의 원자층 증착장치(100)에서 플라즈마 제공부(130)의 구조 및 동작을 설명하기 위한 요부 단면도이다. 그리고 도 3과 도 4는 는 도 1의 원자층 증착장치(100)에서 플라즈마 제공부(130)의 구조를 설명하기 위한 평면도들이다.Hereinafter, an atomic layer deposition apparatus 100 according to embodiments of the present invention will be described in detail with reference to FIGS. 1 to 4. For reference, FIG. 1 is a cross-sectional view for explaining an example of an atomic layer deposition apparatus 100 according to an embodiment of the present invention, and FIG. 2 is a plasma providing unit (2) in the atomic layer deposition apparatus 100 of FIG. 130 is a sectional view showing the principal parts of the structure and operation of 130. 3 and 4 are plan views illustrating the structure of the plasma providing unit 130 in the atomic layer deposition apparatus 100 of FIG.

도면을 참조하면, 원자층 증착장치(100)는 프로세스 챔버(101), 서셉터(102), 가스분사부(103) 및 플라즈마 제공부(130)를 포함하여 구성된다.Referring to the drawings, the atomic layer deposition apparatus 100 includes a process chamber 101, a susceptor 102, a gas injection unit 103, and a plasma providing unit 130.

이하에서 설명하는 원자층 증착장치(100)는 스루풋(throughput) 및 품질을 향상시키기 위해서 복수의 기판(10)에 대해 동시에 증착이 수행되며 기판(10) 및 서셉터(102)에 대해 가스분사부(103)가 평행하게 배치된 상태로 서셉터(102)가 회전함에 따라 가스분사부(103)에서 제공되는 서로 다른 종류의 가스가 분사되는 영역을 통과하면서 기판(10)에 소정의 박막이 증착되는 형태의 세미 배치 타입(semi-batch type)을 예로 들어 설명한다.In the atomic layer deposition apparatus 100 described below, deposition is simultaneously performed on a plurality of substrates 10 in order to improve throughput and quality, and a gas injection unit for the substrate 10 and the susceptor 102. As the susceptor 102 rotates in a state where the 103 is arranged in parallel, a predetermined thin film is deposited on the substrate 10 while passing through regions in which different kinds of gases provided from the gas injection units 103 are injected. A semi-batch type of the form will be described as an example.

본 실시예에서 증착 대상이 되는 기판(10)은 실리콘 웨이퍼(silicon wafer)일 수 있다. 그러나 기판(10)은 실리콘 웨이퍼(silicon wafer)에 한정되는 것은 아니며, LCD(liquid crystal display), PDP(plasma display panel)와 같은 평판 디스플레이 장치용으로 사용하는 글라스를 포함하는 투명 기판(10)일 수 있다.In this embodiment, the substrate 10 to be deposited may be a silicon wafer. However, the substrate 10 is not limited to a silicon wafer, but is a transparent substrate 10 including glass used for a flat panel display device such as a liquid crystal display (LCD) and a plasma display panel (PDP). Can be.

한편, 원자층 증착장치(100)에서 프로세스 챔버(101), 가스분사부(103) 등의 상세한 기술구성은 공지의 기술로부터 이해 가능하며 본 발명의 요지가 아니므로 자세한 설명 및 도시를 생략하고 주요 구성요소에 대해서만 간략하게 설명한다.On the other hand, in the atomic layer deposition apparatus 100, the detailed technical configuration of the process chamber 101, the gas injection unit 103 and the like can be understood from known techniques and are not the gist of the present invention, and thus, detailed descriptions and illustrations will be omitted. Only the components are briefly described.

프로세스 챔버(101)는 다수의 기판(10)을 수용하여 증착공정이 수행되는 공간을 제공한다.The process chamber 101 accommodates a plurality of substrates 10 to provide a space in which a deposition process is performed.

서셉터(102)는 프로세스 챔버(101) 내부에서 다수의 기판(10)이 안착되고, 소정 속도로 회전함에 따라 기판(10)이 공전한다. 예를 들어, 서셉터(102)는 6장의 기판이 안착된다. 그러나 본 발명이 이에 한정되는 것은 아니며, 서셉터(102)에 안착되는 기판(10)의 수는 실질적으로 다양하게 변경 가능하다.In the susceptor 102, a plurality of substrates 10 are seated in the process chamber 101, and the substrates 10 revolve as the substrate 10 rotates at a predetermined speed. For example, the susceptor 102 has six substrates mounted thereon. However, the present invention is not limited thereto, and the number of substrates 10 seated on the susceptor 102 may vary substantially.

프로세스 챔버(101) 상부에는 기판(10)에 서로 다른 복수의 증착가스를 제공하기 위한 가스분사부(103)가 구비되고, 가스분사부(103)는 각각의 증착가스가 제공되는 분사영역으로 분할 형성된다. 예를 들어, 도 2에 도시한 바와 같이, 가스분사부(103)는 퍼지가스가 제공되는 퍼지영역(P)과 플라즈마 제공부(130)가 구비되며 프리커서 가스와 리액턴스 가스가 각각 제공되는 소스영역(S)로 구분된다. 그러나 본 발명이 도면에 한정되는 것은 아니며, 가스분사부(103)는 제공되는 가스의 종류와 수에 따라 다른 형태로 분할될 수 있다.The gas injection unit 103 is provided on the process chamber 101 to provide a plurality of different deposition gases to the substrate 10, and the gas injection unit 103 is divided into injection regions in which respective deposition gases are provided. Is formed. For example, as shown in FIG. 2, the gas injection unit 103 includes a purge region P in which purge gas is provided and a plasma providing unit 130, and a source in which a precursor gas and a reactance gas are provided, respectively. It is divided into an area S. However, the present invention is not limited to the drawings, and the gas injection unit 103 may be divided into other forms according to the type and number of gases provided.

여기서, 본 실시예에서 '증착가스'는 기판(10)에 박막을 증착하기 위해서 제공되는 적어도 1종 이상의 가스를 포함하며, 기판(10)에 형성하고자 하는 박막의 구성 물질을 포함하는 프리커서 가스(precursor gas), 상기 프리커서 가스와 화학적으로 반응하는 리액턴스 가스(reactance gas), 및 프리커서 가스와 리액턴스 가스를 퍼지 시키기 위한 퍼지 가스(purge gas)를 포함한다.Here, in the present embodiment, the 'deposition gas' includes at least one gas provided to deposit a thin film on the substrate 10, and a precursor gas including a constituent material of the thin film to be formed on the substrate 10. (precursor gas), a reactant gas chemically reacting with the precursor gas, and a purge gas for purging the precursor gas and the reactant gas.

퍼지영역(P)은 퍼지가스를 기판(10)에 균일하게 제공할 수 있도록 샤워헤드 형태를 가질 수 있다. 또는 퍼지영역(P)은 하나 또는 다수의 노즐이 사용될 수 있다.The purge region P may have a showerhead shape to uniformly provide the purge gas to the substrate 10. Alternatively, the purge region P may use one or a plurality of nozzles.

플라즈마 제공부(130)는 가스분사부(103)에서 리액턴스 가스와 프리커서 가스가 제공되는 영역 중 어느 하나 또는 양쪽 모두에 구비된다. 그리고 플라즈마 제공부(130)는 다이렉트 플라즈마를 제공할 수 있도록 형성된다.The plasma providing unit 130 is provided in any one or both of the region where the reactant gas and the precursor gas are provided in the gas injection unit 103. The plasma providing unit 130 is formed to provide a direct plasma.

도 2를 참조하면, 플라즈마 제공부(130)는 가스가 주입되어 플라즈마를 형성하기 위한 공간을 형성하는 플라즈마 챔버(134)와 지지 구조물(132) 및 상기 플라즈마 챔버(134) 상부 및 하부에 구비되어 플라즈마 형성을 위한 전기장을 형성하는 전원 전극(131)과 접지 전극(133)으로 구성된다. 그리고 플라즈마 제공부(130) 일측에는 플라즈마 챔버(134) 내부로 가스를 주입하는 가스공급부(104)가 연결된다.Referring to FIG. 2, the plasma providing unit 130 is provided in the plasma chamber 134 and the support structure 132 and the upper and lower portions of the plasma chamber 134 to form a space for injecting gas to form plasma. It is composed of a power electrode 131 and a ground electrode 133 to form an electric field for plasma formation. One side of the plasma providing unit 130 is connected to a gas supply unit 104 for injecting gas into the plasma chamber 134.

전원 전극(131)과 접지 전극(133)은 플레이트 형태를 갖고 서로 평행하게 상부 및 하부에 배치된다. 그리고 전원 전극(131)과 접지 전극(133) 사이의 공간에 전기장이 인가도어 주입되는 가스를 플라즈마화 시켜서 기판(10)에 제공하기 위한 플라즈마 챔버(134)를 형성한다. 즉, 플라즈마 챔버(134)는 상부에 전원 전극(131)이 구비되고, 하부에 접지 전극(133)이 구비되며, 서로 평행한 전원 전극(131)과 접지 전극(133) 사이에서 지지하고, 측벽을 구성하는 지지 구조물(132)에 의해 둘러싸인 공간으로 형성된다. 예를 들어, 지지 구조물(132)은 플라즈마 챔버(134) 내부에서 아크 방전이 발생하는 것을 방지하고, 전원 전극(131)과 접지 전극(133) 사이를 절연시킬 수 있도록 유전체 재질 또는 절연체 재질로 형성된다.The power electrode 131 and the ground electrode 133 have a plate shape and are disposed at the upper and lower portions in parallel with each other. In addition, the plasma chamber 134 is formed to plasma the gas into which the electric field is applied to the space between the power supply electrode 131 and the ground electrode 133 to provide the substrate 10. That is, the plasma chamber 134 is provided with a power electrode 131 at an upper portion, a ground electrode 133 at a lower portion thereof, supported between the power electrode 131 and the ground electrode 133 parallel to each other, and sidewalls. It is formed as a space surrounded by the support structure 132 constituting. For example, the support structure 132 is formed of a dielectric material or an insulator material to prevent arc discharge from occurring in the plasma chamber 134 and to insulate the power electrode 131 from the ground electrode 133. do.

그리고 플라즈마 챔버(134) 내부로 주입되는 가스가 전원 전극(131) 및 접지 전극(133) 사이에서 형성된 전기장에 의해 플라즈마화되고, 접지 전극(133)에 형성된 개구부(310)을 통해 플라즈마 입자가 기판(10)에 제공된다. 여기서, 플라즈마 입자라 함은, 가스가 플라즈마 상태로 여기되어 발생하는 중성입자인 라디칼(radical)과 이온 등의 입자를 모두 포함한다.The gas injected into the plasma chamber 134 is converted into plasma by an electric field formed between the power electrode 131 and the ground electrode 133, and the plasma particles are formed through the opening 310 formed in the ground electrode 133. 10 is provided. Here, the plasma particles include particles such as radicals and ions, which are neutral particles generated by the gas being excited in a plasma state.

플라즈마 챔버(134)에서 형성된 플라즈마 입자를 기판(10)에 직접 제공할 수 있도록 접지 전극에 소정 크기의 개구부(310)가 형성된다. 개구부(310)는 형성된 플라즈마 입자들을 직접 기판(10)에 제공할 수 있을 정도의 크기로 형성된다.An opening 310 having a predetermined size is formed in the ground electrode to directly provide the plasma particles formed in the plasma chamber 134 to the substrate 10. The opening 310 is formed to a size sufficient to provide the formed plasma particles directly to the substrate 10.

예를 들어, 도 3에 도시한 바와 같이, 개구부(311)는 개구된 부분의 단면 형상이 원형으로 형성되고, 기판(10)에 대응되는 크기를 가질 수 있다. 그러나 본 발명이 도면에 의해 한정되는 것은 아니며, 개구부(311) 형상은 다각형을 포함하여 다양한 형상을 가질 수 있다. 또한, 개구부(311)의 크기는 플라즈마 입자를 기판(10)에 직접 제공할 수 있는 정도의 크기라면 실질적으로 다양하게 변경될 수 있다.For example, as shown in FIG. 3, the opening 311 may have a circular cross-sectional shape of the opened portion, and may have a size corresponding to the substrate 10. However, the present invention is not limited by the drawings, and the opening 311 may have various shapes including a polygon. In addition, the size of the opening 311 may be substantially varied as long as it is large enough to directly provide the plasma particles to the substrate 10.

또는 도 4에 도시한 바와 같이, 개구부(312)는 소정 크기를 갖고 하나 또는 다수의 슬릿 형태를 가질 수 있다. 또한, 개구부(312)는 기판(10)이 이동하는 방향에 대해서 직각으로 형성될 수 있다. 그러나 본 발명이 도면에 의해 한정되는 것은 아니며, 개구부(312)의 배치 형태는 실질적으로 다양하게 변경될 수 있다. 여기서, 개구부(312)의 개구된 면적과 크기는 플라즈마 챔버(134) 내부에서 형성된 플라즈마 입자를 기판(10)에 제공할 수 있는 정도의 크기로 형성된다.
Alternatively, as shown in FIG. 4, the opening 312 may have a predetermined size and have one or more slits. In addition, the opening 312 may be formed at right angles to the direction in which the substrate 10 moves. However, the present invention is not limited by the drawings, and the arrangement of the opening 312 may be changed in various ways. Here, the opened area and the size of the opening 312 is formed to a size that can provide the plasma particles formed in the plasma chamber 134 to the substrate 10.

한편, 상술한 실시예에서는 플레이트 형태의 전원 전극과 접지 전극이 상하로 평행하게 구비된 플라즈마 제공부에 대해서 설명하였으나, 상술한 실시예와는 달리 평행한 2개의 원통형태의 전원 전극과 접지 전극을 사이에서 플라즈마를 형성하여 제공할 수 있다.Meanwhile, in the above-described embodiment, the plasma providing unit in which the plate-type power electrode and the ground electrode are provided in parallel with each other is described. However, unlike the above-described embodiment, two parallel cylindrical power supply electrodes and the ground electrode are used. Plasma can be formed and provided therebetween.

참고적으로, 도 5는 본 발명의 변형 실시예에 따른 원자층 증착장치(200)의 단면도이고, 도 6은 도 5의 원자층 증착장치(200)에서 플라즈마 제공부(230)의 구조 및 동작을 설명하기 위한 요부 단면도이고, 도 7은 도 5의 원자층 증착장치(200)에서 플라즈마 제공부(230)의 구조를 설명하기 위한 평면도이다. 한편, 이하에서 설명하는 실시예는 플라즈마 제공부(230)의 구성을 제외하고는 상술한 도 1 내지 도 4에서 설명한 실시예와 실질적으로 동일하며, 동일한 구성요소에 대해서는 동일한 명칭을 사용하고 중복되는 설명은 생략한다. 그리고 도 5 내지 도 7에서는 상술한 구성요소와 동일한 구성요소에 대해서 200번대의 도면부호를 사용하였다.For reference, FIG. 5 is a cross-sectional view of an atomic layer deposition apparatus 200 according to a modified embodiment of the present invention, and FIG. 6 is a structure and an operation of the plasma providing unit 230 in the atomic layer deposition apparatus 200 of FIG. 7 is a plan view illustrating the structure of the plasma providing unit 230 in the atomic layer deposition apparatus 200 of FIG. 5. Meanwhile, the embodiments described below are substantially the same as the embodiments described with reference to FIGS. 1 to 4 except for the configuration of the plasma providing unit 230, and the same names are used for the same components. Description is omitted. 5 to 7 used 200 reference numerals for the same components as the above-described components.

도면을 참조하면, 원자층 증착장치(200)는 프로세스 챔버(201), 서셉터(202), 가스분사부(203) 및 플라즈마 제공부(230)를 포함하여 구성된다.Referring to the drawings, the atomic layer deposition apparatus 200 includes a process chamber 201, a susceptor 202, a gas injection unit 203, and a plasma providing unit 230.

플라즈마 제공부(230)는 가스분사부(203)에서 프리커서 가스 및/또는 리액턴스 가스가 제공되는 영역에 구비된다.The plasma providing unit 230 is provided in a region where the precursor gas and / or reactance gas are provided in the gas injection unit 203.

도 6에 도시한 바와 같이, 플라즈마 제공부(230)는 프리커서 가스/리액턴스 가스를 플라즈마화 시켜서 제공할 수 있도록, 사이에 소정 간격 이격되어 가스가 주입되어 플라즈마되는 공간을 형성하는 원통 형태의 전원 전극(231)과 접지 전극(233)으로 구성된다. 예를 들어, 전원 전극(231)과 접지 전극(233)은 서로 동심원 상에 배치될 수 있다. 그리고 전원 전극(231)이 내부에 구비되고, 전원 전극(231) 외부에 접지 전극(233)이 구비될 수 있다. 전원 전극(231)과 접지 전극(233)은 기판(10)에 다이렉트 플라즈마를 제공할 수 있도록 충분한 크기로 형성된다. 예를 들어, 전원 전극(231)과 접지 전극(233)은 기판(10)에 직경에 대응되는 크기를 가질 수 있다. 그러나 본 발명이 이에 한정되는 것은 아니며, 전원 전극(231)과 접지 전극(233)의 크기는 실질적으로 다양하게 변경될 수 있다.As shown in FIG. 6, the plasma providing unit 230 may provide a precursor gas / reactance gas by providing a plasma, and a cylindrical power supply spaced apart from each other by a predetermined interval to form a space in which gas is injected. It consists of an electrode 231 and a ground electrode 233. For example, the power electrode 231 and the ground electrode 233 may be disposed on concentric circles with each other. The power electrode 231 may be provided inside, and the ground electrode 233 may be provided outside the power electrode 231. The power supply electrode 231 and the ground electrode 233 are formed to be large enough to provide a direct plasma to the substrate 10. For example, the power electrode 231 and the ground electrode 233 may have a size corresponding to the diameter of the substrate 10. However, the present invention is not limited thereto, and sizes of the power electrode 231 and the ground electrode 233 may be changed in various ways.

플라즈마 제공부(230)는 2개의 이격된 원통형 전극 사이의 공간이 가스가 주입되는 유로가 되고, 더불어, 주입된 가스가 2개의 원통형 전극(231, 233) 사이에서 발생한 전기장에 의해 플라즈마 상태로 여기된다. 그리고 발생된 플라즈마는 접지 전극(233)의 하부에 형성된 개구부(234)를 통해서 하부에 제공된 기판(10)에 제공된다. 예를 들어, 개구부(234)는 접지 전극(233)의 하단부가 일정 크기로 절단된 형태를 가질 수 있다. 즉, 플라즈마 제공부(230)는 도 7에 도시한 바와 같이, 가스분사부(203)의 평면을 보았을 때, 개구부(234)의 형상이 접지 전극(233)의 크기에 대응되는 사각형 슬릿 또는 개구 형상을 가지고, 그 내부 중앙에 전원 전극(231)이 배치된 형상을 가질 수 있다. 그러나 본 발명이 도면에 의해 한정되는 것은 아니며, 개구부(234)의 형상은 기판(10)의 크기 및 전원 전극(231)과 접지 전극(233)의 형상 및 크기에 따라 실질적으로 다양하게 변경될 수 있다.The plasma providing unit 230 is a flow path through which gas is injected into a space between two spaced cylindrical electrodes, and the injected gas is excited in a plasma state by an electric field generated between the two cylindrical electrodes 231 and 233. do. The generated plasma is provided to the substrate 10 provided below through the opening 234 formed below the ground electrode 233. For example, the opening 234 may have a shape in which a lower end of the ground electrode 233 is cut to a predetermined size. That is, as shown in FIG. 7, the plasma providing unit 230 has a rectangular slit or opening whose shape of the opening 234 corresponds to the size of the ground electrode 233 when the plane of the gas injection unit 203 is viewed. It may have a shape, and may have a shape in which the power electrode 231 is disposed in the center thereof. However, the present invention is not limited by the drawings, and the shape of the opening 234 may be changed in various ways depending on the size of the substrate 10 and the shape and size of the power electrode 231 and the ground electrode 233. have.

여기서, 미설명 도면부호 204는 플라즈마 제공부(230)에 프리커서 가스/리액턴스 가스를 제공하는 가스제공부(204)이다.Here, reference numeral 204 denotes a gas providing unit 204 for providing the precursor gas / reactance gas to the plasma providing unit 230.

본 실시예에 따르면, 다이렉트 플라즈마를 제공함으로써 증착가스의 반응성을 향상시켜서 증착속도와 막질을 향상시킬 수 있다. 또한, 다이렉트 플라즈마에는 중성의 라디칼 입자뿐만 아니라 양이온 및 음이온 입자까지 모두 제공하므로 산소(O2)나 질소(N2), 암모니아(NH3) 등의 플라즈마를 제공하는 것이 가능하다. 또한, 이로 인하 박막의 품질을 효과적으로 향상시킬 수 있다.According to this embodiment, by providing a direct plasma to improve the reactivity of the deposition gas it is possible to improve the deposition rate and film quality. In addition, since not only neutral radical particles but also positive and negative ion particles are provided to the direct plasma, it is possible to provide a plasma such as oxygen (O 2), nitrogen (N 2), ammonia (NH 3), or the like. In addition, this can effectively improve the quality of the reduced thin film.

이상과 같이 본 발명에서는 구체적인 구성 요소 등과 같은 특정 사항들과 한정된 실시예 및 도면에 의해 설명되었으나 이는 본 발명의 보다 전반적인 이해를 돕기 위해서 제공된 것이다. 또한, 본 발명이 상술한 실시예들에 한정되는 것은 아니며, 본 발명이 속하는 분야에서 통상적인 지식을 가진 자라면 이러한 기재로부터 다양한 수정 및 변형이 가능하다. 그러므로, 본 발명의 사상은 상술한 실시예에 국한되어 정해져서는 아니 되며, 후술하는 특허청구범위뿐 아니라 특허청구범위와 균등하거나 등가적 변형이 있는 모든 것들은 본 발명 사상의 범주에 속한다고 할 것이다.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. In addition, the present invention is not limited to the above-described embodiments, and various modifications and variations are possible to those skilled in the art to which the present invention pertains. Therefore, the spirit of the present invention should not be construed as being limited to the above-described embodiments, and all of the equivalents or equivalents of the claims, as well as the following claims, are included in the scope of the present invention.

10: 기판
100: 원자층 증착장치
101: 프로세스 챔버
102: 서셉터
103: 가스분사부
104: 가스공급부
130: 플라즈마 제공부
131: 전원 전극
132: 지지 구조물
133: 접지 전극
134: 플라즈마 챔버
310, 311, 312: 개구부10: substrate
100: atomic layer deposition apparatus
101: process chamber
102: susceptor
103: gas injection unit
104: gas supply unit
130: plasma providing unit
131: power electrode
132: support structure
133: ground electrode
134: plasma chamber
310, 311, 312: openings

Claims (10)

다수의 기판을 수용하여 박막이 증착되는 세미배치(semi-batch) 방식의 원자층 증착장치에 있어서,
다수의 기판을 수용하여 박막을 증착하는 공간을 제공하는 프로세스 챔버;
상기 프로세스 챔버 내부에 구비되어 상기 기판이 수평으로 안착되며, 상기 기판을 공전시키는 서셉터;
상기 프로세스 챔버 상부에 구비되어 상기 기판에 서로 다른 종류의 증착가스를 각각 제공하는 다수의 분사영역으로 분할 형성된 가스분사부; 및
상기 가스분사부에 구비되되, 상기 분사영역 중에서 프리커서 가스 및/또는 리액턴스 가스가 제공되는 영역에 구비되어 해당 가스를 플라즈마 상태로 여기시키고 다이렉트 플라즈마를 제공하는 플라즈마 제공부;
를 포함하는 원자층 증착장치.
In the semi-batch atomic layer deposition apparatus in which a thin film is deposited by receiving a plurality of substrates,
A process chamber accommodating a plurality of substrates to provide a space for depositing a thin film;
A susceptor provided inside the process chamber to seat the substrate horizontally and revolve the substrate;
A gas injection part disposed on the process chamber and divided into a plurality of injection regions respectively providing different types of deposition gases to the substrate; And
A plasma providing unit which is provided in the gas ejection unit and is provided in a region in which the precursor gas and / or reactance gas is provided among the injection regions to excite the gas in a plasma state and provide a direct plasma;
Atomic layer deposition apparatus comprising a.
제1항에 있어서,
상기 플라즈마 제공부는,
증착가스가 주입되어 플라즈마 상태로 여기되는 공간을 형성하는 플라즈마 챔버;
상기 플라즈마 챔버 상부에 구비되어 플레이트 형태를 갖고 전원이 인가되는 전원 전극; 및
상기 전원 전극 하부에 상기 전원 전극과 평행하게 배치되어 접지가 연결되고, 상기 플라즈마 챔버 내부에서 발생한 플라즈마 입자를 기판에 제공하도록 개구부가 형성된 접지 전극;
을 포함하는 원자층 증착장치.
The method of claim 1,
The plasma providing unit,
A plasma chamber in which a deposition gas is injected to form a space excited in a plasma state;
A power electrode provided on the plasma chamber and having a plate shape and to which power is applied; And
A ground electrode disposed under the power electrode in parallel with the power electrode and having a ground connected thereto, the ground electrode having an opening to provide plasma particles generated in the plasma chamber to the substrate;
Atomic layer deposition apparatus comprising a.
제2항에 있어서,
상기 개구부는 플라즈마 챔버 내부의 플라즈마 입자 중에서 라디칼과 이온을 전부 기판에 제공할 수 있는 개구 면적을 갖는 원자층 증착장치.
The method of claim 2,
And the opening has an opening area capable of providing all of the radicals and ions to the substrate among the plasma particles in the plasma chamber.
제2항에 있어서,
상기 개구부는 개구된 부분이 원형 또는 다각형 형상을 갖는 원자층 증착장치.
The method of claim 2,
The opening is an atomic layer deposition apparatus having an open portion having a circular or polygonal shape.
제2항에 있어서,
상기 개구부는 슬릿 형상을 갖고, 하나 또는 다수의 슬릿으로 구성되는 원자층 증착장치.
The method of claim 2,
The opening has an slit shape and is composed of one or a plurality of slits.
제2항에 있어서,
상기 전원 전극과 상기 접지 전극을 지지하고, 상기 플라즈마 챔버의 측벽을 형성하는 지지 구조물이 구비되고,
상기 지지 구조물은 유전체 재질로 형성된 원자층 증착장치.
The method of claim 2,
A support structure supporting the power supply electrode and the ground electrode and forming sidewalls of the plasma chamber,
The support structure is an atomic layer deposition apparatus formed of a dielectric material.
제1항에 있어서,
상기 플라즈마 제공부는,
전원이 인가되고 원통형의 전원 전극; 및
상기 전원 전극과 이격되어 접지가 연결되고, 상기 기판을 향하는 하부에 개구부가 형성된 원통형의 접지 전극;
을 포함하고,
상기 전원 전극과 상기 접지 전극이 이격된 공간 사이로 증착가스가 주입되어 플라즈마 상태로 여기되고,
상기 플라즈마 제공부 하부에 형성된 개구부를 통해서 상기 플라즈마 입자를 상기 기판에 제공하는 원자층 증착장치.
The method of claim 1,
The plasma providing unit,
A power supply and a cylindrical power supply electrode; And
A cylindrical ground electrode spaced apart from the power electrode and connected to ground, and having an opening formed in a lower portion thereof facing the substrate;
/ RTI >
Deposition gas is injected into the space spaced apart from the power electrode and the ground electrode to be excited in a plasma state,
An atomic layer deposition apparatus for providing the plasma particles to the substrate through the opening formed in the lower portion of the plasma providing unit.
제7항에 있어서,
상기 플라즈마 제공부는 상기 전원 전극 외부에 일정 간격 이격되어 상기 접지 전극이 구비되는 원자층 증착장치.
The method of claim 7, wherein
The plasma providing unit is an atomic layer deposition apparatus provided with the ground electrode spaced apart a predetermined interval outside the power electrode.
제8항에 있어서,
상기 접지 전극 하부가 일부 절단되어 상기 플라즈마를 상기 기판에 제공할 수 있도록 개구부가 형성된 원자층 증착장치.
9. The method of claim 8,
And an opening formed to partially cut the ground electrode to provide the plasma to the substrate.
제8항에 있어서,
상기 전원 전극과 상기 접지 전극은 상기 기판의 직경 방향을 따라 배치되는 원자층 증착장치.9. The method of claim 8,
And the power supply electrode and the ground electrode are disposed along a radial direction of the substrate.
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Cited By (205)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150071107A (en) * 2013-12-18 2015-06-26 주식회사 케이씨텍 Deposition apparatus
US11004977B2 (en) 2017-07-19 2021-05-11 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11001925B2 (en) 2016-12-19 2021-05-11 Asm Ip Holding B.V. Substrate processing apparatus
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US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
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US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11069510B2 (en) 2017-08-30 2021-07-20 Asm Ip Holding B.V. Substrate processing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11094582B2 (en) 2016-07-08 2021-08-17 Asm Ip Holding B.V. Selective deposition method to form air gaps
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US11101370B2 (en) 2016-05-02 2021-08-24 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US11107676B2 (en) 2016-07-28 2021-08-31 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
US11114294B2 (en) 2019-03-08 2021-09-07 Asm Ip Holding B.V. Structure including SiOC layer and method of forming same
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
US11127617B2 (en) 2017-11-27 2021-09-21 Asm Ip Holding B.V. Storage device for storing wafer cassettes for use with a batch furnace
US11127589B2 (en) 2019-02-01 2021-09-21 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
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US11227789B2 (en) 2019-02-20 2022-01-18 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11233133B2 (en) 2015-10-21 2022-01-25 Asm Ip Holding B.V. NbMC layers
US11242598B2 (en) 2015-06-26 2022-02-08 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
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US11676812B2 (en) 2016-02-19 2023-06-13 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on top/bottom portions
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US11680839B2 (en) 2019-08-05 2023-06-20 Asm Ip Holding B.V. Liquid level sensor for a chemical source vessel
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Publication number Priority date Publication date Assignee Title
US11725277B2 (en) 2011-07-20 2023-08-15 Asm Ip Holding B.V. Pressure transmitter for a semiconductor processing environment
US11501956B2 (en) 2012-10-12 2022-11-15 Asm Ip Holding B.V. Semiconductor reaction chamber showerhead
KR20150071107A (en) * 2013-12-18 2015-06-26 주식회사 케이씨텍 Deposition apparatus
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
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US11233133B2 (en) 2015-10-21 2022-01-25 Asm Ip Holding B.V. NbMC layers
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US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US11676812B2 (en) 2016-02-19 2023-06-13 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on top/bottom portions
US11101370B2 (en) 2016-05-02 2021-08-24 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
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US11205585B2 (en) 2016-07-28 2021-12-21 Asm Ip Holding B.V. Substrate processing apparatus and method of operating the same
US11107676B2 (en) 2016-07-28 2021-08-31 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US11810788B2 (en) 2016-11-01 2023-11-07 Asm Ip Holding B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US11396702B2 (en) 2016-11-15 2022-07-26 Asm Ip Holding B.V. Gas supply unit and substrate processing apparatus including the gas supply unit
US11222772B2 (en) 2016-12-14 2022-01-11 Asm Ip Holding B.V. Substrate processing apparatus
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11851755B2 (en) 2016-12-15 2023-12-26 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11001925B2 (en) 2016-12-19 2021-05-11 Asm Ip Holding B.V. Substrate processing apparatus
US11251035B2 (en) 2016-12-22 2022-02-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US11410851B2 (en) 2017-02-15 2022-08-09 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US11658030B2 (en) 2017-03-29 2023-05-23 Asm Ip Holding B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US11848200B2 (en) 2017-05-08 2023-12-19 Asm Ip Holding B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US11695054B2 (en) 2017-07-18 2023-07-04 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
US11164955B2 (en) 2017-07-18 2021-11-02 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11004977B2 (en) 2017-07-19 2021-05-11 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11802338B2 (en) 2017-07-26 2023-10-31 Asm Ip Holding B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US11417545B2 (en) 2017-08-08 2022-08-16 Asm Ip Holding B.V. Radiation shield
US11587821B2 (en) 2017-08-08 2023-02-21 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11069510B2 (en) 2017-08-30 2021-07-20 Asm Ip Holding B.V. Substrate processing apparatus
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11581220B2 (en) 2017-08-30 2023-02-14 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11387120B2 (en) 2017-09-28 2022-07-12 Asm Ip Holding B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US11094546B2 (en) 2017-10-05 2021-08-17 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
US11682572B2 (en) 2017-11-27 2023-06-20 Asm Ip Holdings B.V. Storage device for storing wafer cassettes for use with a batch furnace
US11127617B2 (en) 2017-11-27 2021-09-21 Asm Ip Holding B.V. Storage device for storing wafer cassettes for use with a batch furnace
US11639811B2 (en) 2017-11-27 2023-05-02 Asm Ip Holding B.V. Apparatus including a clean mini environment
US11501973B2 (en) 2018-01-16 2022-11-15 Asm Ip Holding B.V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US11482412B2 (en) 2018-01-19 2022-10-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
US11393690B2 (en) 2018-01-19 2022-07-19 Asm Ip Holding B.V. Deposition method
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US11735414B2 (en) 2018-02-06 2023-08-22 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11387106B2 (en) 2018-02-14 2022-07-12 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11482418B2 (en) 2018-02-20 2022-10-25 Asm Ip Holding B.V. Substrate processing method and apparatus
US11939673B2 (en) 2018-02-23 2024-03-26 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
US11398382B2 (en) 2018-03-27 2022-07-26 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11361990B2 (en) 2018-05-28 2022-06-14 Asm Ip Holding B.V. Substrate processing method and device manufactured by using the same
US11908733B2 (en) 2018-05-28 2024-02-20 Asm Ip Holding B.V. Substrate processing method and device manufactured by using the same
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11837483B2 (en) 2018-06-04 2023-12-05 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US11296189B2 (en) 2018-06-21 2022-04-05 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US11530483B2 (en) 2018-06-21 2022-12-20 Asm Ip Holding B.V. Substrate processing system
US11814715B2 (en) 2018-06-27 2023-11-14 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11492703B2 (en) 2018-06-27 2022-11-08 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11952658B2 (en) 2018-06-27 2024-04-09 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11168395B2 (en) 2018-06-29 2021-11-09 Asm Ip Holding B.V. Temperature-controlled flange and reactor system including same
US11646197B2 (en) 2018-07-03 2023-05-09 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11923190B2 (en) 2018-07-03 2024-03-05 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11804388B2 (en) 2018-09-11 2023-10-31 Asm Ip Holding B.V. Substrate processing apparatus and method
US11274369B2 (en) 2018-09-11 2022-03-15 Asm Ip Holding B.V. Thin film deposition method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US11885023B2 (en) 2018-10-01 2024-01-30 Asm Ip Holding B.V. Substrate retaining apparatus, system including the apparatus, and method of using same
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11414760B2 (en) 2018-10-08 2022-08-16 Asm Ip Holding B.V. Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same
US11664199B2 (en) 2018-10-19 2023-05-30 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
US11251068B2 (en) 2018-10-19 2022-02-15 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11735445B2 (en) 2018-10-31 2023-08-22 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11866823B2 (en) 2018-11-02 2024-01-09 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11499226B2 (en) 2018-11-02 2022-11-15 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US11244825B2 (en) 2018-11-16 2022-02-08 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US11798999B2 (en) 2018-11-16 2023-10-24 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
US11488819B2 (en) 2018-12-04 2022-11-01 Asm Ip Holding B.V. Method of cleaning substrate processing apparatus
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11769670B2 (en) 2018-12-13 2023-09-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11658029B2 (en) 2018-12-14 2023-05-23 Asm Ip Holding B.V. Method of forming a device structure using selective deposition of gallium nitride and system for same
US11390946B2 (en) 2019-01-17 2022-07-19 Asm Ip Holding B.V. Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11171025B2 (en) 2019-01-22 2021-11-09 Asm Ip Holding B.V. Substrate processing device
US11127589B2 (en) 2019-02-01 2021-09-21 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
US11615980B2 (en) 2019-02-20 2023-03-28 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11227789B2 (en) 2019-02-20 2022-01-18 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11798834B2 (en) 2019-02-20 2023-10-24 Asm Ip Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11342216B2 (en) 2019-02-20 2022-05-24 Asm Ip Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11251040B2 (en) 2019-02-20 2022-02-15 Asm Ip Holding B.V. Cyclical deposition method including treatment step and apparatus for same
US11629407B2 (en) 2019-02-22 2023-04-18 Asm Ip Holding B.V. Substrate processing apparatus and method for processing substrates
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
US11901175B2 (en) 2019-03-08 2024-02-13 Asm Ip Holding B.V. Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11424119B2 (en) 2019-03-08 2022-08-23 Asm Ip Holding B.V. Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11114294B2 (en) 2019-03-08 2021-09-07 Asm Ip Holding B.V. Structure including SiOC layer and method of forming same
US11378337B2 (en) 2019-03-28 2022-07-05 Asm Ip Holding B.V. Door opener and substrate processing apparatus provided therewith
US11551925B2 (en) 2019-04-01 2023-01-10 Asm Ip Holding B.V. Method for manufacturing a semiconductor device
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
US11814747B2 (en) 2019-04-24 2023-11-14 Asm Ip Holding B.V. Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
US11289326B2 (en) 2019-05-07 2022-03-29 Asm Ip Holding B.V. Method for reforming amorphous carbon polymer film
US11781221B2 (en) 2019-05-07 2023-10-10 Asm Ip Holding B.V. Chemical source vessel with dip tube
US11355338B2 (en) 2019-05-10 2022-06-07 Asm Ip Holding B.V. Method of depositing material onto a surface and structure formed according to the method
US11515188B2 (en) 2019-05-16 2022-11-29 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
US11345999B2 (en) 2019-06-06 2022-05-31 Asm Ip Holding B.V. Method of using a gas-phase reactor system including analyzing exhausted gas
US11476109B2 (en) 2019-06-11 2022-10-18 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
US11908684B2 (en) 2019-06-11 2024-02-20 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
US11746414B2 (en) 2019-07-03 2023-09-05 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
US11390945B2 (en) 2019-07-03 2022-07-19 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
US11605528B2 (en) 2019-07-09 2023-03-14 Asm Ip Holding B.V. Plasma device using coaxial waveguide, and substrate treatment method
US11664267B2 (en) 2019-07-10 2023-05-30 Asm Ip Holding B.V. Substrate support assembly and substrate processing device including the same
US11664245B2 (en) 2019-07-16 2023-05-30 Asm Ip Holding B.V. Substrate processing device
US11688603B2 (en) 2019-07-17 2023-06-27 Asm Ip Holding B.V. Methods of forming silicon germanium structures
US11615970B2 (en) 2019-07-17 2023-03-28 Asm Ip Holding B.V. Radical assist ignition plasma system and method
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
US11282698B2 (en) 2019-07-19 2022-03-22 Asm Ip Holding B.V. Method of forming topology-controlled amorphous carbon polymer film
US11557474B2 (en) 2019-07-29 2023-01-17 Asm Ip Holding B.V. Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
US11430640B2 (en) 2019-07-30 2022-08-30 Asm Ip Holding B.V. Substrate processing apparatus
US11443926B2 (en) 2019-07-30 2022-09-13 Asm Ip Holding B.V. Substrate processing apparatus
US11876008B2 (en) 2019-07-31 2024-01-16 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11680839B2 (en) 2019-08-05 2023-06-20 Asm Ip Holding B.V. Liquid level sensor for a chemical source vessel
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
US11639548B2 (en) 2019-08-21 2023-05-02 Asm Ip Holding B.V. Film-forming material mixed-gas forming device and film forming device
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
US11594450B2 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Method for forming a structure with a hole
US11898242B2 (en) 2019-08-23 2024-02-13 Asm Ip Holding B.V. Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11827978B2 (en) 2019-08-23 2023-11-28 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11527400B2 (en) 2019-08-23 2022-12-13 Asm Ip Holding B.V. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11495459B2 (en) 2019-09-04 2022-11-08 Asm Ip Holding B.V. Methods for selective deposition using a sacrificial capping layer
US11823876B2 (en) 2019-09-05 2023-11-21 Asm Ip Holding B.V. Substrate processing apparatus
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
US11610774B2 (en) 2019-10-02 2023-03-21 Asm Ip Holding B.V. Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
US11339476B2 (en) 2019-10-08 2022-05-24 Asm Ip Holding B.V. Substrate processing device having connection plates, substrate processing method
US11735422B2 (en) 2019-10-10 2023-08-22 Asm Ip Holding B.V. Method of forming a photoresist underlayer and structure including same
US11637011B2 (en) 2019-10-16 2023-04-25 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
US11315794B2 (en) 2019-10-21 2022-04-26 Asm Ip Holding B.V. Apparatus and methods for selectively etching films
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
US11594600B2 (en) 2019-11-05 2023-02-28 Asm Ip Holding B.V. Structures with doped semiconductor layers and methods and systems for forming same
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
US11626316B2 (en) 2019-11-20 2023-04-11 Asm Ip Holding B.V. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11401605B2 (en) 2019-11-26 2022-08-02 Asm Ip Holding B.V. Substrate processing apparatus
US11915929B2 (en) 2019-11-26 2024-02-27 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
US11923181B2 (en) 2019-11-29 2024-03-05 Asm Ip Holding B.V. Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing
US11646184B2 (en) 2019-11-29 2023-05-09 Asm Ip Holding B.V. Substrate processing apparatus
US11929251B2 (en) 2019-12-02 2024-03-12 Asm Ip Holding B.V. Substrate processing apparatus having electrostatic chuck and substrate processing method
US11840761B2 (en) 2019-12-04 2023-12-12 Asm Ip Holding B.V. Substrate processing apparatus
US11885013B2 (en) 2019-12-17 2024-01-30 Asm Ip Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11551912B2 (en) 2020-01-20 2023-01-10 Asm Ip Holding B.V. Method of forming thin film and method of modifying surface of thin film
US11521851B2 (en) 2020-02-03 2022-12-06 Asm Ip Holding B.V. Method of forming structures including a vanadium or indium layer
US11828707B2 (en) 2020-02-04 2023-11-28 Asm Ip Holding B.V. Method and apparatus for transmittance measurements of large articles
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
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US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
US11837494B2 (en) 2020-03-11 2023-12-05 Asm Ip Holding B.V. Substrate handling device with adjustable joints
US11488854B2 (en) 2020-03-11 2022-11-01 Asm Ip Holding B.V. Substrate handling device with adjustable joints
US11823866B2 (en) 2020-04-02 2023-11-21 Asm Ip Holding B.V. Thin film forming method
US11830738B2 (en) 2020-04-03 2023-11-28 Asm Ip Holding B.V. Method for forming barrier layer and method for manufacturing semiconductor device
US11437241B2 (en) 2020-04-08 2022-09-06 Asm Ip Holding B.V. Apparatus and methods for selectively etching silicon oxide films
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11887857B2 (en) 2020-04-24 2024-01-30 Asm Ip Holding B.V. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
US11898243B2 (en) 2020-04-24 2024-02-13 Asm Ip Holding B.V. Method of forming vanadium nitride-containing layer
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