KR101021372B1 - Atomic layer deposition apparatus - Google Patents

Abstract

Disclosed is an atomic layer deposition apparatus in which a plurality of substrates are stacked in two layers to simultaneously perform a deposition process. The atomic layer deposition apparatus connects the first support block, the second support block, and the two support blocks, each of which is formed by stacking a plurality of substrates horizontally and stacked up and down, and revolves the substrate with respect to the center of each support block. A susceptor unit including a drive shaft, a process chamber accommodating the plurality of substrates to provide a space in which a deposition process is performed, and divided into a first reaction chamber and a second reaction chamber by the support blocks, and the first and second reactions; A gas injection unit provided in each chamber to provide a deposition gas for deposition on the substrate and injecting the deposition gas in parallel to the substrate at the substrate side, and a heater unit provided in the process chamber to heat the substrate. It is configured to include.

Atomic layer deposition apparatus, ALD, double layer susceptor, lateral type deposition gas injection

Description

Atomic Layer Deposition Apparatus {ATOMIC LAYER DEPOSITION APPARATUS}

The present invention relates to an atomic layer deposition apparatus, and to provide an atomic layer deposition apparatus capable of increasing the number of substrates that can be processed simultaneously and improving throughput.

In general, in order to deposit a thin film having a predetermined thickness on a substrate such as a semiconductor substrate or glass, physical vapor deposition (PVD) using physical collision such as sputtering and chemical vapor deposition using chemical reaction thin film manufacturing method using (chemical vapor deposition, CVD) or the like is used.

The chemical vapor deposition method may include atmospheric pressure chemical vapor deposition (APCVD), low pressure chemical vapor deposition (LPCVD), plasma organic chemical vapor deposition (plasma enhanced CVD, PECVD), and the like. Plasma organic chemical vapor deposition has been widely used due to the advantages of being able to deposit and fast forming thin films.

However, as the design rule of the semiconductor device is drastically fined, a thin film of a fine pattern is required, and the step height of the region where the thin film is formed is also very large. As a result, the use of a single atomic layer deposition (ALD) method capable of forming a very fine pattern of atomic layer thickness very uniformly and having excellent step coverage has been increasing.

The atomic layer deposition method (ALD) is similar to the conventional chemical vapor deposition method in that it uses chemical reactions between gas molecules. However, conventional chemical vapor deposition (CVD) methods inject a plurality of gas molecules into the process chamber at the same time to deposit reaction products generated above the substrate onto the substrate, whereas atomic layer deposition processes a single gaseous material. It is different in that it is injected into the chamber and then purged to leave only the physically adsorbed gas on top of the heated substrate, and then inject other gaseous materials to deposit chemical reaction products that occur only on the upper surface of the substrate.

The thin film implemented through such an atomic layer deposition method has a very good step coverage characteristics and has the advantage that it is possible to implement a pure thin film with a low impurity content, which is widely attracting attention.

In the conventional atomic layer deposition apparatus, a semi-batch type is disclosed in which a deposition process is simultaneously performed on a plurality of substrates in order to improve throughput. In the semi-batch type atomic layer deposition apparatus, a deposition gas composed of different types of source gases is injected while the showerhead or susceptor rotates at high speed, and a thin film is formed on the surface of the substrate while the substrate sequentially passes through the deposition gas. .

However, in the conventional semi-batch type atomic layer deposition apparatus, since the substrate is radially seated along the circumferential direction of the circular susceptor, the size of the process chamber also increases rapidly as the number of substrates to be processed and the size of the substrate increase. do.

That is, while the size of the substrate is gradually increasing in size, it is difficult for the existing atomic layer deposition apparatus to quickly respond to the trend of increasing the size of the substrate. In this case, since the size of the susceptor and the process chamber is rapidly increased, there is a problem in that a conventional semi batch type atomic layer deposition apparatus cannot be used.

An object of the present invention for solving the above problems is to provide an atomic layer deposition apparatus that can accommodate a large-sized substrate to process the deposition process.

Another object of the present invention is to provide a semi-batch type atomic layer deposition apparatus capable of simultaneously processing a plurality of substrates of the present invention.

According to the embodiments of the present invention for achieving the above object of the present invention, in the atomic layer deposition apparatus in which a deposition process is performed by simultaneously stacking a plurality of substrates in two layers, a plurality of substrates are horizontally seated and stacked vertically A susceptor unit including a formed first support block and a second support block, a driving shaft connecting the two support blocks and revolving the substrate with respect to the center of each of the support blocks; And a process chamber partitioned into each of the first reaction chamber and the second reaction chamber by the supporting blocks, and provided in the first and second reaction chambers, respectively, to provide a deposition gas for deposition on the substrate. A gas injection unit formed inside the process chamber and a gas injection unit configured to spray the deposition gas parallel to the substrate at a substrate side; It is configured to include a heater unit for heating the plate.

In the present invention, the deposition gas is a different kind of source gas and reactant gas including a source material constituting a thin film, and a purge gas for purging the source gas and the reactant gas ( purge gas).

The gas injection unit may include a source gas injection unit provided at one side of each reaction chamber to inject the source gas to the substrate, and a side gas injection unit provided at one side of each reaction chamber to inject the reaction gas into the substrate. And a purge gas injector provided in the gas injector and the driving shaft to inject the purge gas to the substrate. The source gas injector, the reaction gas injector, and the purge gas injector may have any one of a nozzle, a showerhead, and an air knife.

The source gas injection unit and the reaction gas injection unit may be formed along outer circumferences of the first and second support blocks, and may be formed at a portion of the circumferences of the first and second support blocks. The source gas injector and the reaction gas injector may be formed along a circumference corresponding to one of the plurality of substrates seated on the first and second support blocks, respectively. In addition, the source gas injector and the reaction gas injector may be formed at positions facing each other with respect to the center of each support block.

The purge gas injection unit supports the first purge to inject the purge gas into the first reaction block and the first purge injection unit provided at the center of the first support block to inject the purge gas into the first reaction chamber. It may be configured to include a second purge injection unit provided in the drive shaft connecting the block and the second support block. For example, the purge gas injection unit may have any one of a circular cross section or a polygonal cross section having a corner corresponding one to one to the number of substrates.

An exhaust unit may be provided to suck and exhaust the exhaust gas inside the process chamber. For example, the exhaust unit may include a first exhaust hole formed in an upper portion of the center of the process chamber and a second reaction through the lower portion of the process chamber to suck and discharge the exhaust gas inside the first reaction chamber through the upper portion of the process chamber. And a second exhaust hole formed around the drive shaft in the second support block to suck and discharge the exhaust gas inside the chamber.

A separator may be provided to protrude from the inside of the process chamber so as to surround outer peripheral edges of the first and second support blocks, and to protrude coplanar with each of the support blocks.

The heater unit includes a first heater provided above the process chamber to heat the substrate of the first reaction chamber and a second heater provided below the process chamber to heat the substrate of the second reaction chamber. It is configured by.

On the other hand, according to other embodiments of the present invention for achieving the above object of the present invention, the atomic layer deposition apparatus is carried out by simultaneously depositing a plurality of substrates in two layers, the plurality of substrates are horizontally seated And a source gas supply unit supplying a source gas including a source material constituting a thin film into the process chamber and two process chambers stacked in two layers and simultaneously performing a deposition process on the plurality of substrates. Here, the two process chambers are formed to share one source gas supply.

As described above, according to the present invention, first, by having a susceptor unit in which a support block on which a plurality of substrates are seated in a semi-batch type is stacked in two layers, the number of substrates that can be processed simultaneously is increased and throughput is increased. Can improve.

Second, since the deposition process for the substrate is performed in each reaction chamber separated by the support block, it is possible to prevent deterioration of deposition quality.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited or limited by the embodiments. In describing the present invention, a detailed description of well-known functions or constructions may be omitted for clarity of the present invention.

Hereinafter, an atomic layer deposition apparatus 100 according to an embodiment of the present invention will be described in detail with reference to FIGS. 1 to 3. For reference, FIG. 1 is a cross-sectional view illustrating an example of an atomic layer deposition apparatus 100, and FIG. 2 is a perspective view of main parts of the first reaction chamber 111 in the atomic layer deposition apparatus 100 of FIG. 1. 3 is a perspective view illustrating main parts of the second reaction chamber 112 in the atomic layer deposition apparatus 100 of FIG. 1.

Referring to the drawings, the atomic layer deposition apparatus 100 includes a process chamber 101, a susceptor unit 102, a gas injection unit 103, a heater unit 130, and an exhaust unit 105.

The atomic layer deposition apparatus 100 is seated so that a plurality of substrates 10 horizontally seated are stacked on the back side, and the deposition process is simultaneously performed on the plurality of substrates 10 stacked in the two layers.

Here, the susceptor unit 102 is formed by stacking two support blocks 211 and 212 on which the plurality of substrates 10 are seated in the process chamber 101 up and down, and the susceptor unit 102. The inner space of the process chamber 101 is divided into two reaction chambers 110, and a deposition process for the substrate 10 is performed in each reaction chamber 110. That is, the process chamber 101 is a second reaction chamber 112 which is a space between the first reaction chamber 111 that is the upper space of the first support block 211 and the first and second support blocks 211 and 212. It is divided into As shown in FIGS. 2 and 3, the first reaction chamber 111 and the second reaction chamber 112 accommodate the plurality of substrates 10 in spaces that are independent of each other. -batch type).

According to the present invention, the reaction chambers 110 are separated from each other by the susceptor unit 102, and even though the substrate 10 is stacked in two layers, the interior of the space defined by the reaction chambers 110 is a conventional semi-conductor. Since the deposition environment is provided in the same manner as the batch type process chamber 101, since the deposition process is performed in the reaction chamber 110, the reaction chambers 110 may uniformly provide the deposition gas to the substrate 10 with a predetermined density or more. Therefore, the deposition quality and speed can be increased.

Here, the substrate 10 to be deposited in the present invention may be a silicon wafer. However, the object of the present invention is not limited to a silicon wafer, and the substrate 10 may be a transparent substrate including glass used for a flat panel display device such as a liquid crystal display (LCD) and a plasma display panel (PDP). Can be. In addition, the shape and size of the substrate 10 is not limited by the drawings, and may have substantially various shapes and sizes, such as a circle and a rectangle.

In addition, in the present invention, the deposition gas refers to gases used in the process of depositing a thin film, and at least one kind of gas containing a source material constituting the thin film to be deposited on the substrate 10 and the gas Contains gas for purge. In the present embodiment, a second material including a source material constituting the thin film and chemically reacting with the first source gas S1 and the first source gas S1 physically adsorbed on the substrate 10 to form a thin film. A stable purge gas PG that does not chemically react with the source gas S2 and the substrate 10, the first source gas S1, the second source gas S2, and the deposited thin film is used. For example, in order to deposit a silicon thin film, the first source gas S1 may be formed of any one of silane (Silane, SiH4), silicon (Disilane, Si2H6), and silicon tetrafluoride (SiF4) containing silicon. In addition, the second source gas S2 may use oxygen (O 2) or ozone (O 3) gas. The purge gas PG may use any one of argon (Ar), nitrogen (N 2), helium (He), or a mixture of two or more thereof. However, the present invention is not limited thereto, and the number and type of deposition gases may be changed in various ways.

In addition, in the present invention, the exhaust gas refers to an excess gas of the deposition gas provided into the process chamber 101 or a reaction by-product between the remaining gas and the deposition gas remaining without forming a thin film on the substrate 10. Include.

The susceptor unit 102 includes two first support blocks 211 and a second support block 212 having flat top surfaces so that the plurality of substrates 10 are seated in a horizontal direction, and the first and second support blocks 212. A drive shaft 215 is provided to connect the support blocks 211 and 212 to each other and to rotate the support blocks 211 and 212. For example, the first and second support blocks 211 and 212 may have a circular plate shape in which four substrates 10 are radially seated along the circumferential direction of each of the support blocks 211 and 212. The drive shaft 215 is coupled to the central portion of the first and second support blocks 211 and 212 to couple the first and second support blocks 211 and 212, and the substrate 10 is supported by the respective support blocks. The first and second support blocks 211 and 212 are rotated to revolve with respect to the center of 211 and 212.

Here, the shape of the susceptor unit 102 is not limited to a circular shape and may have various shapes, and the number of substrates 10 seated on the first and second support blocks 211 and 212 may also be used. can be changed.

Meanwhile, the support blocks 211 and 212 serve to partition the first and second reaction chambers as well as the seating of the substrate 10. Each of the support blocks 211 and 212 may have an edge portion spaced apart from the inner surface of the process chamber 101 by a predetermined distance, and the gap between the support blocks 211 and 212 and the process chamber 101 may include A separator 120 is provided to effectively separate the first and second reaction chambers 111 and 112 from each other by reducing the distance between the support blocks 211 and 212 and the process chamber 101. . For example, the separator 120 is formed to protrude a predetermined height inside the process chamber 101 along the boundary portion of each reaction chamber 110, and the first and second support blocks 211 and 212 are formed. Two separators 121 and 122 are formed to form the same plane. That is, the separator 120 reduces the distance between the support blocks 211 and 212 and the process chamber 101 at positions corresponding to the first and second support blocks 211 and 212. In the first and second reaction chambers 111 and 112, gas inflow can be blocked and effectively separated.

The gas injection unit 103, the heater unit 130, and the exhaust unit 105 for the deposition process are provided in the reaction chambers 110, respectively. Here, the gas injection unit 103, the heater unit 130, and the exhaust unit 105 are provided in the first and second reaction chambers 111 and 112, respectively, and the substrate 10 stacked in two layers. It is formed to be disposed in a symmetrical position in the reaction chamber 110 to provide a deposition environment in the same).

For example, the gas injection unit 103 is formed in the side of the substrate 10 in each reaction chamber 110 is formed in a lateral injection form to provide a deposition gas in parallel to the substrate (10).

The gas injection unit 103 provides a source gas injection unit 310 providing the source gas S, a reaction gas injection unit 320 providing the reaction gas R, and the purge gas PG. It consists of a purge gas injection unit 330. In addition, a gas supply unit 104 may be provided at one side of the gas injection unit 103 to supply the deposition gas to the gas injection unit 103. The gas supply unit 104 supplies a first supply source 141 for supplying the source gas S, a second supply source 142 for supplying the reaction gas R, and a supply of the purge gas PG. A third source 143.

As illustrated in FIGS. 2 and 3, the source gas injector 310 and the reaction gas injector 320 may inject the deposition gas from the side of the substrate 10 to the substrate 10. It is provided along the outer periphery of the susceptor unit 102 so as to provide the source gas (S) and the reaction gas (R) toward the center of the reaction chamber (110). For example, the source gas injection unit 310 and the reaction gas injection unit 320 is the outer peripheral portion of the susceptor unit 102 is the surface on which the source gas (S) and the reaction gas (R) is injected A plurality of injection holes 311a, 312a, 321a, and 322a for injecting the deposition gas are formed on a surface facing the substrate 10 toward the substrate 10.

Here, the source gas injection unit 310 and the reaction gas injection unit 320 is the source gas (S) and the reaction gas (R) toward the center of the substrate 10 and the susceptor unit (102). It is provided in the first reaction chamber 111 and the second reaction chamber 112 to provide a. That is, the source gas injection unit 310 and the reaction gas injection unit 320 may include a first source injection unit 311 and a first reaction injection unit 321 provided in the first reaction chamber 111. A second source injection unit 321 and a second reaction injection unit 322 provided in the second reaction chamber 112 are formed. In addition, the source gas injector 310 and the reaction gas injector 320 may be formed at the side of the process chamber 101 to simplify the connection with the gas supply unit 104 and minimize the length of the connection pipe. The first and second source injection units 311 and 312 are formed up and down at the same position. Similarly, the first reaction injection unit 321 and the second reaction injection unit 322 are also formed up and down at the same position on one side of the process chamber 101.

The source gas injection unit 310 and the reaction gas injection unit 320 have a predetermined height such that the source gas injection holes 311a and 312a and the reaction gas injection holes 321a and 322a are formed above the substrate 10. It is provided on top of each of the support blocks (211, 212). Here, the size, number and arrangement of the source gas injection holes 311a and 312a and the reaction gas injection holes 321a and 322a are not limited by the drawings and may be arranged in various forms and may be circular. It may have a polygonal hole or slit shape.

In addition, the source gas injector 310 and the reaction gas injector 320 may be formed to inject the source gas S and the reactant gas R onto each of the substrates 10. That is, the source gas injection unit 310 and the reaction gas injection unit 320 is formed to have a length less than or equal to 1/4 of the outer periphery of the susceptor unit 102. In addition, the source gas injection unit 310 and the reaction gas injection unit 320 are formed at positions facing each other 180 degrees apart in the radial direction of the susceptor unit 102.

However, the present invention is not limited thereto, and the source gas injector 310 and the reaction gas injector 320 may be divided into a plurality of spray surfaces formed discontinuously along the circumferences of the support blocks 211 and 212. It may have a form. For example, the source gas injector 310 and the reaction gas injector 320 may be formed to inject the source gas S and the reaction gas R onto two substrates 10, respectively. It is also possible. However, the substrate 10 is separated from the source gas injector 310 by a predetermined distance from the source gas injector 310 and the reaction gas injector 320 so that a purge step may be performed in a deposition cycle. The purge may be performed while passing between the reaction gas injection units 320. In addition, the source gas injection unit 310 and the reaction gas injection unit 320 formed to correspond to the one substrate 10 may be alternately formed.

The purge gas injection unit 330 is provided at the center of each of the support blocks 211 and 212 to provide the purge gas PG in all directions. For example, the purge gas injection unit 330 has a circular cross section to provide the purge gas PG to the substrate 10 disposed radially, and a hollow in which a flow path of the purge gas PG is formed. Purge gas injection holes (331a, 332a) are densely formed on the outer circumferential surface of the purge gas injection unit 330.

Here, the purge gas injection unit 330 has a cylindrical shape protruding a predetermined height from the upper surface of the first support block 211 in the first reaction chamber 111, a plurality of purge gas injection holes 331a on the surface ) Is provided with a first purge injection unit 331, and in the second reaction chamber 112, a second purge injection to the drive shaft 215 connecting the first and second support blocks 211 and 212. Unit 332 is formed. That is, the second purge injection unit 332 has a predetermined hollow portion for supplying the purge gas PG to the driving shaft 215, and has a plurality of purge gas injection holes on the surface of the drive shaft 215. 332a) is formed.

However, the shape of the purge gas injector 330 is not limited to the drawings, and the purge gas injector 330 may have various shapes including a polygonal cross section. For example, the purge gas injection unit 330 may have a pillar shape having a regular hexagonal cross section so that a portion facing the substrate 10 becomes a plane. In addition, the size, number and arrangement of the purge gas injection holes 331a and 332a are not limited by the drawings. The purge gas injection holes 331a and 332a may be arranged in various forms and may have a circular or polygonal hole or slit shape.

Meanwhile, in the present embodiment, the gas injection unit 103 has been described an example of a showerhead in which a plurality of holes are densely formed on the surface, but the present invention is not limited by the drawings, and the gas injection unit ( 103 may have the form of a nozzle or an air knife.

The heater unit 130 has a first heater 131 for heating the first reaction chamber 111 is provided in the upper portion of the process chamber 101 and the second heater for heating of the reaction chamber 112 2 heater 132 is provided below the process chamber 101. For example, since the first heater 131 heats the substrate 10 on the substrate 10, a conventional lamp heater may be used. In addition, the second heater 132 heats the substrate 10 through the second support block 212 at the bottom of the second support block 212, so that a lamp heater or a heating wire is formed. A heater can be used. However, the shape of the heater unit 130 is not limited by the drawings, and the heater unit 130 may be provided in each of the support blocks 211 and 212.

The exhaust unit 105 is configured to discharge the exhaust gas of the first reaction chamber 111 through the process chamber 101, and the exhaust gas of the second reaction chamber 112 is the process chamber ( 101 is formed to discharge through the bottom. For example, since the gas injection unit 103 provides the deposition gas from the side of the substrate 10 to the substrate 10, the exhaust portion 105 may improve the suction efficiency of the exhaust gas. It is provided in the central part of the chamber 101. That is, a plurality of first exhaust holes 151 are formed at the center of the process chamber 101 to exhaust and exhaust the exhaust gas inside the first reaction chamber 111. In addition, a plurality of second exhaust holes 152 are formed through the central portion of the second support block 212 so that the exhaust gas inside the second reaction chamber 112 is lowered to the process chamber 101. Discharged.

Here, the exhaust part 105 is provided with exhaust pumps 155 and 156 for discharging the exhaust gas sucked from the exhaust holes 151 and 152, and for example, the first exhaust hole 151 The first exhaust pump 155 is provided and the second exhaust hole 152 is provided with a second exhaust pump 156. Meanwhile, one exhaust pump may be used for the first and second exhaust pumps 155 and 156.

However, the present invention is not limited by the drawings, and the size, number, and arrangement of the exhaust holes 151 and 152 are not limited by the drawings, and may be arranged in various forms and may be circular or polygonal holes or It may have a slit shape.

On the other hand, referring to the atomic layer deposition process, the source gas (S2) is provided to be physically adsorbed on the substrate 10, the residual source gas (not adsorbed to the substrate 10 by the purge gas (PG) ( Purge and remove S2). Next, the reaction product is deposited while the source gas S2 and the reaction gas S2 are chemically reacted on the upper surface of the substrate 10 by providing the reaction gas S2. The purge gas PG is provided to remove the residual reaction gas S2 from which the reaction does not occur on the surface of the substrate 10. In this way, the source gas S2, the purge gas PG, the reaction gas S2, and the purge gas PG are provided as one cycle of an atomic layer deposition process, and the deposition cycle A plurality of thin films having a predetermined thickness are formed on the substrate 10 while being repeatedly performed a plurality of times.

According to the present embodiment, as the susceptor unit 102 rotates, the substrate 10 sequentially rotates the source gas injector 310 and the reaction gas injector 320 in the reaction chamber 110. A predetermined thin film is formed by the reaction of the source gas (S) and the reaction gas (R) while passing through the portion, and the portion where the source gas injection unit (310) and the reaction gas injection unit (320) are not formed is formed. When passing, the exhaust gas of the upper portion of the substrate 10 is purged by the purge gas PG. As the susceptor unit 102 rotates a plurality of times, a thin film having a predetermined thickness is formed on the substrate 10 while the deposition cycle is repeatedly performed a plurality of times.

Meanwhile, in order to further increase throughput by increasing the number of substrates 10 that can be simultaneously processed in the atomic layer deposition apparatus 100, a process chamber in which a plurality of substrates 10 are stacked and stacked in two layers as in the above-described embodiment. Two 101a and 101b may be provided.

Hereinafter, referring to FIG. 4, an example of an atomic layer deposition apparatus 100 including two process chambers 101a and 101b capable of simultaneously depositing a plurality of substrates 10 stacked in two layers may be described. Explain. Here, the embodiments described below are substantially the same except that two process chambers 101a and 101b are provided, and the same names and reference numerals are used for the same components, and redundant descriptions are omitted. In addition, in FIG. 4, in order to simplify the complexity of the drawings, reference numerals of components other than the process chamber and the gas injection unit are omitted.

As shown in FIG. 4, the atomic layer deposition apparatus 100 includes two process chambers 101a and 101b capable of simultaneously depositing a plurality of substrates 10 stacked in two layers. Process chambers 101a and 101b share one source gas supply 141. Here, the reaction gas supply units 142a and 142b and the purge gas supply units 143a and 143b may be provided in the process chambers 101a and 101b, respectively. Alternatively, the two process chambers 101a and 101b may be formed to share the reaction gas supply parts 142a and 142b and the purge gas supply parts 143a and 143b.

According to the present invention, since the process chambers 101a and 101b share one source gas supply unit 141, the process chambers 101a and 101b and the atomic layer deposition apparatus 100 may be reduced in size and simplified in structure. There are advantages to it. That is, since the source gas S is supplied to the two process chambers 101a and 101b from one source gas supply unit 141, spaces and peripheral devices corresponding to the amount of one source gas supply unit 141 is omitted. It has the effect of saving and simplifying the structure.

In this case, a deposition cycle is performed in the process chambers 101a and 101b in the same manner, and the source gas supply unit 141 is simultaneously connected to each of the process chambers 101a and 101b so that the two process chambers 101a and 101b can be used. Is formed to provide the source gas (S) at the same time.

Alternatively, the source gas supply unit 141 may be formed to alternately supply the source gas S to the two process chambers 101a and 101b. For example, the reaction gas R may be provided to the second process chambers 101a and 101b while the source gas S is provided to the first process chambers 101a and 101b. Here, a valve is provided at the connection portion between the source gas supply unit 141 and the process chambers 101a and 101b to control the supply of the source gas S by alternately turning on / off the valve. Can be. However, the present invention is not limited thereto, and the connection form between the source gas supply unit 141 and the process chambers 101a and 101b may be changed in various ways.

As described above, although described with reference to the preferred embodiment of the present invention, those skilled in the art various modifications and variations of the present invention without departing from the spirit and scope of the invention described in the claims below I can understand that you can.

1 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention;

FIG. 2 is a perspective view of main parts of the first reaction chamber in the atomic layer deposition apparatus of FIG. 1; FIG.

3 is a perspective view of principal parts of a second reaction chamber in the atomic layer deposition apparatus of FIG. 1;

4 is a cross-sectional view of an atomic layer deposition apparatus according to another embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

10: substrate 100: atomic layer deposition apparatus

101: process chamber 102: susceptor unit

103: gas injection unit 104, 141, 142, 143: gas supply unit

105: exhaust 110, 111, 112: reaction chamber

120, 121, 122: separator

130, 131, 132: heater unit 151, 152: exhaust hole

155, 156: exhaust pumps 211, 212: support blocks

215: drive shaft 310, 311, 312: source gas injection unit

311a and 312a: first injection holes 320, 321 and 322: reaction gas injection units

321a and 322a: second injection holes 330, 331 and 332: purge gas injection unit

331a, 332a: purge gas injection hole

Claims (12)

A plurality of substrates are horizontally seated and includes a driving shaft connecting the first and second support blocks, the first and second support blocks, the first and second support blocks, which are vertically stacked, and revolve the substrate about the center of each of the support blocks. A susceptor unit; A process chamber in which the plurality of substrates are accommodated to provide a space in which a deposition process is performed and partitioned into a first reaction chamber and a second reaction chamber by the support blocks; A gas injection unit provided in each of the first and second reaction chambers to provide a deposition gas for deposition on the substrate and to inject the deposition gas parallel to the substrate at the substrate side; And A heater unit provided in the process chamber to heat the substrate; Atomic layer deposition apparatus comprising a. The method of claim 1, The deposition gas may include different kinds of source gas and reactant gas including a source material constituting a thin film, and a purge gas for purging the source gas and the reactant gas. and, The gas injection unit, A source gas injector provided at one side of each reaction chamber to inject the source gas to the substrate; A reaction gas injector provided at one side of each reaction chamber to inject the reaction gas to the substrate; And A purge gas injector provided in the driving shaft to inject the purge gas to the substrate; Atomic layer deposition apparatus comprising a. The method of claim 2, And the source gas injector and the reactive gas injector are formed along outer circumferences of the first and second support blocks, and formed on a portion of the circumferences of the first and second support blocks. The method of claim 3, And the source gas injector and the reactive gas injector are formed along a circumference corresponding to one of a plurality of substrates seated on the first and second support blocks, respectively. The method of claim 3, And the source gas injector and the reactive gas injector are formed at positions facing each other with respect to the center of each of the support blocks. The method of claim 2, The purge gas injection unit supports the first purge to inject the purge gas into the first reaction block and the first purge injection unit provided at the center of the first support block to inject the purge gas into the first reaction chamber. And a second purge injection unit provided in a drive shaft connecting the block and the second support block. The method of claim 6, The purge gas injection unit is an atomic layer deposition apparatus, characterized in that any one of a circular cross section or a polygonal cross section having a corner corresponding to the number of the substrate one to one. The method of claim 2, And the source gas injector, the reactive gas injector, and the purge gas injector have any one of a nozzle, a showerhead, and an air knife. The method of claim 1, Further comprising an exhaust unit for sucking and exhausting the exhaust gas inside the process chamber, The exhaust unit, A first exhaust hole formed in the upper portion of the center of the process chamber to suck and discharge the exhaust gas inside the first reaction chamber through the process chamber; And A second exhaust hole formed around the drive shaft in the second support block to suck and discharge the exhaust gas inside the second reaction chamber through the process chamber; Atomic layer deposition apparatus comprising a. The method of claim 1, And a separator protruding from the inside of the process chamber to surround outer peripheries of the first and second support blocks and protruding to form the same plane as each of the support blocks. The method of claim 1, The heater unit includes a first heater provided above the process chamber to heat the substrate of the first reaction chamber and a second heater provided below the process chamber to heat the substrate of the second reaction chamber. An atomic layer deposition apparatus, characterized in that. Two process chambers in which a plurality of horizontally seated substrates are stacked in two layers and a deposition process is simultaneously performed on the plurality of substrates; And A source gas supply unit supplying a source gas including a source material constituting a thin film into the process chamber; Including, And the two process chambers are configured to share one source gas supply.

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