KR100901118B1 - Injection Unit of Atomic Layer Deposition Device - Google Patents

Abstract

Disclosed is a spray unit of a thin film deposition apparatus which improves deposition quality by preventing reaction gases from being mixed with each other, and shortens a spray cycle of gas. The injection unit according to the present invention, the supply plate is formed with a plurality of supply holes for supplying different types of gas and the communication with the rotational movement with respect to the supply plate and selectively communicating with a part of the plurality of supply holes according to the rotation position And a connecting plate in which a hole is formed. Therefore, according to the present invention, it is possible to improve the deposition quality by preventing the reaction gases from mixing with each other, and to shorten the injection cycle of the gas at the same rotational speed to improve the deposition rate.

Thin film deposition apparatus, reaction gas, purge gas, supply hole, communication hole

Description

Injection unit of a thin film deposition apparatus {Injection Unit of Atomic Layer Deposition Device}

The present invention relates to a spray unit, and more particularly, to improve the deposition quality by improving the structure to prevent the reaction gases are mixed with each other, the injection rate of the thin film deposition apparatus to improve the deposition rate by shortening the injection cycle of the gas It is about a unit.

In general, in order to deposit a thin film having a predetermined thickness on a substrate such as a semiconductor wafer or glass, physical vapor deposition (PVD) using physical collision such as sputtering and chemical vapor deposition using chemical reaction A thin film production method using (CVD; Chemical Vapor Deposition) is used.

Here, chemical vapor deposition includes atmospheric pressure chemical vapor deposition (APCVD), low pressure chemical vapor deposition (LPCVD), plasma organic chemical vapor deposition (Plasma Enhanced CVD), and the like. Plasma organic chemical vapor deposition has been widely used due to its advantages and fast film formation.

However, as the design rule of the semiconductor device is drastically reduced, a thin film of a fine pattern is required, and the step of the region where the thin film is formed also becomes very large. As a result, the use of an atomic layer deposition (ALD) method, which is capable of forming a very fine pattern of atomic layer thickness very uniformly and has excellent step coverage, has been increasing. That is, it is used for the deposition of thin films such as gate oxide films, capacitor dielectric films and diffusion barrier films in semiconductor manufacturing processes.

The atomic layer deposition method (ALD) is similar to the conventional chemical vapor deposition (CVD) method in that it uses chemical reactions between gas molecules. However, the conventional chemical vapor deposition method is to inject a plurality of gas molecules into the chamber at the same time to deposit the reaction product generated above the wafer onto the wafer, whereas the atomic layer deposition method is to inject one gaseous material into the chamber. It is then different in that it purges it, leaving only the gas that is physically adsorbed on top of the heated wafer, and then injecting another gaseous material to deposit the chemical reaction product that occurs only on the top of the wafer.

The thin film implemented through such an atomic layer deposition method has a very excellent step coverage characteristic, and in particular, has the advantage that it is possible to implement a pure thin film with a very low impurity content, which is widely attracting attention.

1 and 2, an example of a conventional thin film deposition apparatus for depositing a predetermined film on the surface of a substrate by the atomic layer deposition method as described above is as follows.

Conventional thin film deposition apparatus, as shown in Figure 1, is provided with a rotation type injection device on the upper portion of the process chamber (C).

The rotatable injector includes a drive shaft 10, a housing 20, and an injector 30. The injector 30 rotates in the process chamber C and injects reaction gas and purge gas, thereby providing a substrate (W). A thin film is deposited on it.

In contrast, the susceptor 40 is rotated instead of fixing the injection device, and may be configured to inject the reaction gas and the purge gas onto the substrate (W). In addition, since the distance between the rotatable injection device and the susceptor 40 needs to be adjusted according to the process, the susceptor 40 may be configured to move in the vertical direction. On the other hand, the gas discharge port 80 for discharging the internal gas is provided below the process chamber (C).

The susceptor 40 is horizontally installed in the process chamber C, and a plurality of support parts 50 on which the substrate W is seated are placed on the susceptor 40. In addition, a fixing part 60 is installed on the support part 50 to prevent horizontal movement of the substrate W.

Meanwhile, a through hole communicating with the gas outlet 80 may be formed at a portion of the susceptor 40 where the support part 50 is not placed. In addition, a heater 70 is provided inside the support part 50 to suppress the redeposition of the thin film so that the substrate W can be heated.

2 is a view showing the configuration of the injector 30 for injecting the reaction gas and purge gas, the injector 30 is formed with a flow path through which the reaction gas and purge gas flow, the end of each injector 30 On the side, a plurality of injection holes 32 for gas injection are formed.

The injector 30 configured as described above sprays the reaction gas or the purge gas to the substrate W seated on the support part 50 while rotating in the axial direction. Specifically, the injector 30 as shown in FIG. 2 receives the first reaction gas, the purge gas, the second reaction gas, and the purge gas, respectively, and injects them onto the substrate W. Accordingly, each substrate W In the reaction gas and the purge gas is sequentially injected to perform the film forming process.

However, in the conventional thin film deposition apparatus, since the injector rotates at high speed to inject the reaction gas and the purge gas, different kinds of reaction gases are mixed with each other, the concentration is diluted, and unnecessary reaction occurs, resulting in poor deposition quality of the substrate. There was a limit.

In addition, in order to increase the deposition rate on the substrate to increase the rotational speed of the injector, but to increase the deposition rate was limited to increase the rotational speed of the injector. There was also a problem.

The present invention is to solve the above-mentioned conventional problems, an object of the present invention is to provide a spray unit of the thin film deposition apparatus to improve the deposition quality by preventing the phenomenon that different reaction gases are mixed.

Another object of the present invention is to provide a spray unit of a thin film deposition apparatus capable of improving the deposition rate of a substrate even at the same rotational speed.

In order to achieve the above object, the present invention performs a rotational movement relative to the supply plate and the supply plate is formed with a plurality of supply holes for supplying different types of gas, a part of the plurality of supply holes according to the rotation position And it provides a spray unit of the thin film deposition apparatus comprising a connection plate formed with a communication hole selectively communicating with.

The plurality of supply holes may be arranged at regular intervals along the circumferential direction. In addition, the plurality of supply holes are disposed on the circumference having a different radius, the communication hole is more preferably formed in a long radial direction so as to communicate with the supply holes selectively.

The plurality of supply holes may include a first supply hole for supplying a first reaction gas, a second supply hole for supplying a second reaction gas, and a third supply hole for supplying a purge gas. Here, the first supply hole and the second supply hole may be arranged in plural along the circumferential direction, and the third supply hole may be disposed between the first supply hole and the second supply hole, respectively.

On the other hand, the supply plate is formed with a suction hole for forming a flow path through which the air is sucked, the communication hole of the connection plate may be configured to selectively communicate with a portion of the suction hole. Here, the suction hole is composed of a plurality, it is preferable to be disposed at regular intervals along the circumferential direction.

In addition, the suction holes may be disposed between the plurality of supply holes along the rotation direction, and in order to increase the suction time, the communication holes may change the rotation direction of the connection plate at a position corresponding to the suction holes. Therefore, it may be formed relatively longer than other parts.

On the other hand, the injection unit according to the invention is coupled to the connection plate rotates with the connection plate, it is preferable to include a shower head formed with a plurality of injection holes.

The spray unit of the thin film deposition apparatus according to the present invention having the above configuration has the following effects.

First, the thin film deposition of the substrate can be effectively performed by sequentially spraying the reaction gas and the purge gas throughout the process chamber, there is an advantage that can prevent the reaction gases are mixed with each other.

In addition, by forming a flow path through which the air is sucked and configured to remove the injected residual gas after the injection of the reaction gas or purge gas, it is possible to more effectively prevent the phenomenon of mixing between the reaction gases.

In addition, by changing the shape of the communication hole and the like, it is possible to easily change the injection time, the air intake time, etc. of the specific gas, it is possible to more actively cope with the conditions of the deposition process.

Secondly, by properly arranging the holes of the supply plate and the connecting plate, there is an advantage that can increase the deposition rate of the substrate.

Specifically, by forming a plurality of sets of supply holes or suction holes, the reaction gas and the purge gas is injected into a plurality of cycles when the supply plate or the connecting plate is rotated once to prevent the mixing phenomenon between the reaction gases while increasing the deposition rate Can be increased.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description of this embodiment, the same name and the same reference numerals are used for the same configuration and additional description thereof will be omitted.

Referring to Figures 3 and 4, the configuration of the injection unit of the thin film deposition apparatus according to an embodiment of the present invention will be described.

The spray unit of the thin film deposition apparatus according to the present invention is a device for injecting a gas to the substrate in the thin film deposition apparatus, a plurality of injectors for spraying the reaction gas and purge gas conventionally rotates at a high speed to perform the deposition process of the substrate Unlike the method of performing, the reaction gas and the purge gas are sequentially injected into the entire process chamber.

Specifically, the injection unit according to the present invention, the supply pipe 122, 124, the upper plate 110, the supply plate 130, the connection plate 140 and the shower head 150 is configured to be coupled.

The supply pipes 122 and 124 may include a first supply pipe 122 for supplying a first reaction gas and a second supply pipe 124 for supplying a second reaction gas. The first supply hole of the supply plate 130 will be described later. It is configured to communicate with A) and the second supply hole (B).

The upper plate 110 is coupled to the upper portion of the supply plate 130, the suction flow passage 114 is formed on the lower surface as shown in Figure 4, the upper surface is in communication with the suction flow passage 114 112 is formed. Here, the upper hole 112 is connected to the external device in a vacuum state, so that the air in the process chamber can be sucked in the vacuum state.

A supply passage 132 for supplying purge gas is formed at an upper portion of the supply plate 130, and the supply plate 130 communicates with the supply pipes 122 and 124, the supply passage 132, and the supply passage 132. A plurality of supply holes (A, B, P) is provided.

Specifically, the plurality of supply holes (A, B, P) is in communication with the first supply hole (A), the second supply pipe 124 to supply a first reaction gas in communication with the first supply pipe (122). A second supply hole (B) for supplying a second reaction gas, and a third supply hole (P) in communication with the supply passage 132 to supply the purge gas.

In this embodiment, the purge gas is supplied to the third supply hole (P) by the supply passage 132 formed on the supply plate 130, the first supply pipe 122 or the second alternatively It is also possible, of course, to be configured in the form of the supply pipe 124 in the form that the purge gas is supplied.

In addition, the supply plate 130 has a suction hole (V) is formed in communication with the suction flow path 114 to form a flow path through which the air is sucked.

The supply holes (A, B, P) and the suction hole (V) are arranged at regular intervals along the circumference having a predetermined radius, selectively in relation to the communication hole 142 of the connecting plate 140 to be described later Create a gas flow path. A detailed arrangement relationship between the supply holes A, B, and P and the suction hole V will be described later with reference to FIG. 5.

The connection plate 140 performs a relative rotational movement with respect to the supply plate 130 at the lower portion of the supply plate 130, and the plurality of supply holes (A, B, P) and the suction hole according to the rotation position A communication hole 142 selectively communicating with part of (V) is formed.

In this embodiment, the communication hole 142 is formed in a pair, and formed long in the radial direction and optional with the supply holes (A, B, P) and the suction hole (V) of the supply plate 130 according to the rotation position It can be configured to communicate with.

The shower head 150 is coupled to the connection plate 140 to rotate together with the connection plate 140, a plurality of injection holes 152 are formed in the center to supply the gas supplied through the connection plate 140 It is configured to spray on the substrate or to suck in air in the process chamber.

In this embodiment, as shown in Figure 3, the partition 154 is provided on the shower head 150, the passage 156 is formed on the partition 154 can be communicated with the inside and outside. Make sure

The communication hole 142 of the connection plate 140 selectively communicates with the supply holes A, B, P and the suction hole V of the supply plate 130 to supply the reaction gas toward the shower head 150. Supply or suck the air introduced through the injection hole 152, the hole in communication with the shower head 150 side is determined according to the position of the communication hole 142.

In order for the supply plate 130 and the connection plate 140 to perform a relative rotational movement, the supply plate 130 is fixed and the position of the communication hole 142 of the connection plate 140 is rotated while the connection plate 140 rotates. Although it can be configured to change, on the contrary, as the connection plate 140 is fixed and the supply plate 130 rotates, the position of the supply holes A, B, and P is changed, and the supply hole A communicates with the communication hole 142. It is also possible to configure so that B, P) changes with rotation.

By such a configuration, the shower head 150 forms a flow path together with supply holes A, B, and P and suction holes V which are selectively communicated while the position of the communication hole 142 is changed, thereby providing a substrate. Reaction gas or purge gas is supplied to the spray or intake air. The number and arrangement of the supply holes A, B, and P, the shape of the communication hole 142, and the like can be variously modified depending on the process conditions.

Referring to Figure 5, an example of the hole arrangement of the supply plate and the connecting plate will be described as follows.

As illustrated in FIG. 5, the supply holes A, B, and P and the suction holes V of the supply plate 130 are disposed at regular intervals along the circumferential direction.

Specifically, in the present embodiment, the plurality of supply holes A, B, and P are disposed on circumferences having different radii, and the communication hole 142 is connected to the supply holes A, B, and P. It is formed long in the radial direction so as to communicate selectively. In addition, the suction holes (V) are arranged at regular intervals along the circumferential direction from the outside of the supply holes (A, B, P).

That is, the third supply hole (P) is formed along the innermost circumferential direction, the first supply hole (A) and the second supply hole (B) are formed on the outside thereof, and the outermost side sucks air in a vacuum state. Suction holes (V) for the purpose are formed.

The first supply hole (A) and the second supply hole (B) are alternately arranged along the circumferential direction, the third supply hole (P) is the first supply hole (A) and the second supply hole (B) It is arranged between each. In addition, the suction hole (V) is disposed between the plurality of supply holes (A, B, P), respectively.

In this case, when the communication hole 142 of the connecting plate rotates in the counterclockwise direction, the first reaction gas supply, air suction, purge gas supply, air suction, second reaction gas supply, air suction, purge gas The deposition process is performed through a series of supply and air intakes.

On the other hand, in this embodiment, a series of supply holes (A, B, P) is composed of two sets, when the connection hole 125 of the connection plate 140 is rotated one time, two deposition processes can be performed. Therefore, the deposition speed can be increased by shortening the supply stroke of the reaction gas and the purge gas even at the same rotational speed.

Of course, the supply holes (A, B, P) can be arranged in a single set configuration, the number of arrangements or the number of sets of supply holes (A, B, P) can be modified in various ways depending on the process conditions.

And, in this embodiment, as shown in Figure 5, the communication hole 142 is formed relatively longer than the other portion along the rotational direction of the connection plate 140 at a position corresponding to the suction hole (V). do. As such, the communication hole 142 may be configured to increase the time communicating with the suction hole V, thereby further increasing the air suction time in the process chamber.

The shape of the communication hole 142 is an example, the specific shape of the communication hole 142 may be variously modified. In this manner, the shape of the communication hole 142 may be modified to easily change the injection time, the suction time, and the like of the specific gas.

In addition, in the present exemplary embodiment, the communication holes 142 are formed in a pair to form a smooth flow path. Alternatively, the communication holes 142 may be configured as a single communication hole 142.

Next, with reference to FIG. 6, the modification of the hole arrangement of a supply plate and a connection plate is demonstrated.

As described above with reference to FIG. 5, the present modification is configured such that the supply holes A, B, and P and the suction holes V selectively form flow paths according to their relative positions with the communication holes 242.

However, in the present modified example, as shown in FIG. 6, instead of omitting the outermost suction hole V in the supply plate 230, the supply holes A, B, and P are provided in a total of three sets. Therefore, when the connection plate is rotated once, three deposition processes can be performed, thereby further improving the deposition rate.

And, in this modification, the communication holes 242 are composed of three at an angle of 120 ° to each other to correspond to the arrangement of the supply holes A, B, and P provided in three sets.

5 and 6 are examples of the arrangement of the supply holes (A, B, P), the suction hole (V) and the communication hole that can be variously combined, various modifications by the design conditions or the corresponding process conditions, etc. This is possible.

The present invention is not limited to the above-described embodiments, and as can be seen in the appended claims, those skilled in the art can make modifications without departing from the spirit of the present invention, and such modifications are possible. Belongs to the scope of.

1 is a block diagram showing a conventional thin film deposition apparatus;

2 is a partial perspective view of the injector of FIG. 1;

3 is an exploded perspective view showing a spray unit of a thin film deposition apparatus according to an embodiment of the present invention;

Figure 4 is a perspective view of the cutting showing the combined state of the injection unit of FIG.

FIG. 5 is a plan view showing the supply plate of FIG. 3; FIG.

6 is a plan view illustrating a modification of FIG. 5.

<Explanation of Signs of Major Parts of Drawings>

110: upper plate 114: suction flow path

122: first supply pipe 124: second supply pipe

130: supply plate 132: supply flow path

140: connection plate 150: shower head

152: communication hole A: first supply hole

B: second supply hole P: third supply hole

V: suction hole

Claims (9)

A supply plate having a plurality of supply holes for supplying different kinds of gases; And A connection plate having a rotational movement relative to the supply plate and having a communication hole selectively communicating with a part of the plurality of supply holes according to the rotation position; Injection unit of a thin film deposition apparatus comprising a. The method of claim 1, The plurality of supply holes, Injection unit of a thin film deposition apparatus, characterized in that arranged at a predetermined interval along the circumferential direction. The method of claim 1, The plurality of supply holes are arranged on a circumference having different radii; The communication hole is a spray unit of the thin film deposition apparatus, characterized in that formed in the radial direction elongated to selectively communicate with the supply holes. The method of claim 1, The plurality of supply holes, A first supply hole for supplying a first reaction gas; A second supply hole for supplying a second reaction gas; And A third supply hole for supplying purge gas; Injection unit of a thin film deposition apparatus comprising a. The method of claim 4, wherein A plurality of first supply holes and second supply holes are arranged along the circumferential direction; And the third supply hole is disposed between the first supply hole and the second supply hole, respectively. The method of claim 1, A plurality of suction holes are formed in the supply plate at regular intervals along the circumferential direction to form a flow path through which air is sucked; The communication hole of the connection plate is a spray unit of the thin film deposition apparatus, characterized in that selectively communicating with a portion of the suction hole. The method of claim 6, The suction hole, The injection unit of the thin film deposition apparatus, characterized in that disposed between the plurality of supply holes along the rotation direction. The method of claim 6, The communication hole, The injection unit of the thin film deposition apparatus, characterized in that formed in the position corresponding to the suction hole, relatively longer than the other portion along the rotation direction of the connection plate. The method of claim 1, The spray unit of the thin film deposition apparatus is coupled to the connection plate and rotates together with the connection plate, further comprising a shower head is formed with a plurality of injection holes.

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