KR101885525B1 - Atomic Layer Deposition Apparatus and Deposition Method Using the Same - Google Patents

Atomic Layer Deposition Apparatus and Deposition Method Using the Same Download PDF

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KR101885525B1
KR101885525B1 KR1020160108987A KR20160108987A KR101885525B1 KR 101885525 B1 KR101885525 B1 KR 101885525B1 KR 1020160108987 A KR1020160108987 A KR 1020160108987A KR 20160108987 A KR20160108987 A KR 20160108987A KR 101885525 B1 KR101885525 B1 KR 101885525B1
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South Korea
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gas supply
deposited
substrate
atomic layer
gas
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KR1020160108987A
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Korean (ko)
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KR20180023505A (en
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오기영
최학영
최영태
김동원
김상훈
김근식
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주식회사 넥서스비
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Priority to KR1020160108987A priority Critical patent/KR101885525B1/en
Priority to PCT/KR2017/006695 priority patent/WO2018038375A1/en
Publication of KR20180023505A publication Critical patent/KR20180023505A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Atomic layer deposition equipment is provided. The atomic layer deposition apparatus according to an embodiment of the present invention includes a gas supply module for simultaneously spraying an atomic layer deposition gas including a source gas, a purge gas, and a reactive gas onto another region of a substrate to be deposited at the same time, And a stage including a seating part on which the deposition target substrate is placed. At least two layers of atomic layers may be deposited on the deposition target substrate as the stage rotates once.

Description

TECHNICAL FIELD The present invention relates to an atomic layer deposition apparatus and an atomic layer deposition method using the atomic layer deposition apparatus,

The present invention relates to an atomic layer deposition apparatus and an atomic layer deposition method using the atomic layer deposition apparatus, and more particularly, to an atomic layer deposition apparatus for depositing a high quality atomic layer by a space division method and an atomic layer deposition method using the atomic layer deposition apparatus.

In general, a method of depositing a thin film having a predetermined thickness on a substrate such as a semiconductor substrate or a glass substrate includes physical vapor deposition (PVD) using physical collision such as sputtering, And chemical vapor deposition (CVD).

In recent years, as the design rule of a semiconductor device has become finer, a thin film of a fine pattern is required, and a step of a region where a thin film is formed is greatly increased, so that a fine pattern of atomic layer thickness can be formed very uniformly In addition, the use of atomic layer deposition (ALD), which has excellent step coverage, is increasing.

This atomic layer deposition method is similar to the general chemical vapor deposition method in that it utilizes a chemical reaction between gas molecules. However, unlike conventional CVD in which a plurality of gaseous molecules are injected into a process chamber at the same time and the resulting reaction product is deposited on the substrate, the atomic layer deposition method injects a gas containing one source material into the process chamber, There is a difference in that a product by chemical reaction between the source material on the substrate surface is deposited by adsorbing on the substrate and then injecting a gas containing another source material into the process chamber.

However, the currently studied time division atomic layer deposition method has a problem of low productivity. Accordingly, the present inventor has invented an atomic layer deposition apparatus and atomic layer deposition method using the atomic layer deposition apparatus which maintains high atomic layer deposition thin film, but improves productivity.

International Publication No. WO 2013 / 191471A1

SUMMARY OF THE INVENTION It is an object of the present invention to provide an atomic layer deposition apparatus that provides a high-quality thin film while ensuring high productivity, and an atomic layer deposition method using the atomic layer deposition apparatus.

Another object of the present invention is to provide an atomic layer deposition apparatus and atomic layer deposition method using atomic layer deposition apparatus capable of miniaturizing equipment (foot print reduction) while providing a space division atomic layer deposition environment.

It is another object of the present invention to provide a rotation type atomic layer deposition apparatus and atomic layer deposition method using the atomic layer deposition apparatus.

The technical problem to be solved by the present invention is not limited by the above-mentioned problems.

The atomic layer deposition apparatus according to an embodiment of the present invention includes a gas supply module for simultaneously spraying an atomic layer deposition gas including a source gas, a purge gas, and a reactive gas onto another region of a substrate to be deposited at the same time, And a stage including a seating part on which the deposition target substrate is placed. At least two layers of atomic layers may be deposited on the deposition target substrate as the stage rotates once.

According to one embodiment, the gas supply module includes a source gas supply part for injecting the source gas, first and second purge gas supply parts and first and second outside purge gas supply parts for supplying the purge gas, And a first reaction gas supply unit for injecting the reaction gas, wherein the first purge gas supply unit, the first reaction gas supply unit, the first purge gas supply unit, the first purge gas supply unit, The source gas supply unit, the second purge gas supply unit, the second reaction gas supply unit, and the second outside purge gas supply unit.

According to one embodiment, the gas supply module includes a source gas supply part for injecting the source gas, a purge gas supply part for supplying the purge gas, and a reaction gas supply part for injecting the reaction gas, An exhaust port for exhausting a reaction gas or a source gas may be provided between the purge gas supply portions or between the source gas supply portion and the purge gas supply portion.

According to an embodiment of the present invention, an exhaust port for exhausting the reaction gas may be disposed adjacent to the reaction gas supply unit, and an exhaust port for exhausting the source gas may be disposed adjacent to the source gas supply unit.

According to one embodiment, the gas supply module may be configured to inject more deposition gas at the periphery than the center of the stage.

According to one embodiment, the gas supply module is composed of sub gas supply modules, the sub gas supply modules are annularly arranged at a certain angle, and the sub gas supply modules include a sub gas supply module A first purge gas supply part for injecting the purge gas, a first purge gas supply part for injecting the purge gas, a second purge gas supply part for injecting the purge gas, a second purge gas supply part for injecting the purge gas, Wherein the subgas supply modules simultaneously inject atomic layer deposition gases including the source gas, the purge gas, and the reactive gas onto other regions of the substrate to be deposited, And may include outer purge gas feeds at both ends of the subgas feed modules.

According to one embodiment, the gas supply module is composed of sub gas modules that provide different source gases, and as the stage rotates, different types of thin films may be formed on the substrate to be deposited.

The atomic layer deposition method according to an embodiment of the present invention includes depositing a first atomic layer through a gas supply module that rotates a substrate to be deposited and supplies atomic layer deposition gas to the substrate to be deposited, And depositing a second atomic layer on the substrate to be deposited through the gas supply module by further rotating the substrate, wherein when the substrate to be deposited is rotated once, Can be deposited.

According to another aspect of the present invention, there is provided a method for depositing an atomic layer, wherein a stage on which a plurality of deposition target substrates including a first deposition target substrate and a second deposition target substrate are placed is rotated in a first direction, A method of manufacturing a semiconductor device, comprising the steps of: depositing a first atomic layer on a target substrate through a first gas supply module; and supplying a second atomic layer to the second substrate through a second gas supply module, And a second gas supply module for supplying a gas to the first deposition target substrate through the first gas supply module and the second gas supply module, And a second step of further depositing a second atomic layer to the second substrate to be deposited on the second substrate to be deposited through the second gas supply module.

According to another embodiment, the first atomic layer and the second atomic layer may be the same kind of atomic layer.

According to another embodiment, the first atomic layer and the second atomic layer may be different kinds of atomic layers.

According to another embodiment, after the second step is performed, the stage is rotated in the first direction to deposit the second atomic layer on the first substrate to be deposited, through the second gas supply module, And a third step of simultaneously depositing a third atomic layer on the second substrate to be vaporized through a third gas supply module disposed in an annular direction and spaced apart from the second gas supply module.

According to another embodiment, the first atomic layer and the third atomic layer may be the same kind of atomic layer, and the second atomic layer may be a different kind of atomic layer than the first and third atomic layers.

An atomic layer deposition apparatus according to an embodiment of the present invention includes a gas supply module for injecting a deposition gas including a source gas, a purge gas, and a reactive gas simultaneously to other regions of a substrate to be deposited, Wherein the gas supply module is symmetrical with respect to a center line of the stage, and as the stage rotates once, two or more atomic layers are deposited on the deposition target May be configured to be deposited on a substrate. That is, the atomic layer deposition apparatus according to an embodiment of the present invention can improve the productivity so that two or more atomic layers are deposited even if the stage rotates once.

The atomic layer deposition apparatus according to an embodiment of the present invention may further include a discharge port for discharging a reaction gas or a source gas located between the reactive gas supply section and the purge gas supply section or between the source gas supply section and the purge gas supply section . Accordingly, the exhaust port according to the embodiment of the present invention can prevent the incorporation of the atomic layer deposition gas due to the rotation of the stage, thereby providing a high-quality thin film.

Effects according to the embodiment of the present invention are not limited by the effects described above.

1 is a view for explaining an atomic layer deposition apparatus according to a first embodiment of the present invention.
FIG. 2 is a view for explaining an AA 'sectional view of the atomic layer deposition apparatus according to the first embodiment of the present invention.
3 is a view for explaining an atomic layer deposition apparatus according to a second embodiment of the present invention.
4 is a view for explaining a BB 'cross-section of an atomic layer deposition apparatus according to a second embodiment of the present invention.
5 is a view for explaining an atomic layer deposition apparatus according to a third embodiment of the present invention.
6 is a view for explaining an atomic layer deposition method according to the first embodiment of the present invention.
FIGS. 7 and 8 are views for explaining the atomic layer deposition method according to the first embodiment of the present invention.
9 is a view for explaining an atomic layer deposition method according to a second embodiment of the present invention.
FIGS. 10 to 12 are views for explaining the atomic layer deposition method according to the second embodiment of the present invention in detail.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical spirit of the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

In this specification, when an element is referred to as being on another element, it may be directly formed on another element, or a third element may be interposed therebetween. Also, in the drawings, the shapes and sizes or thicknesses of regions are exaggerated for an effective explanation of the technical content.

Also, while the terms first, second, third, etc. in the various embodiments of the present disclosure are used to describe various components, these components should not be limited by these terms. These terms have only been used to distinguish one component from another. Thus, what is referred to as a first component in any one embodiment may be referred to as a second component in another embodiment. Each embodiment described and exemplified herein also includes its complementary embodiment. Also, in this specification, 'and / or' are used to include at least one of the front and rear components.

The singular forms "a", "an", and "the" include plural referents unless the context clearly dictates otherwise. It is also to be understood that the terms such as " comprises "or" having "are intended to specify the presence of stated features, integers, Should not be understood to exclude the presence or addition of one or more other elements, elements, or combinations thereof. Also, in this specification, the term "connection " is used to include both indirectly connecting and directly connecting a plurality of components.

In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

The atomic layer deposition apparatus according to the first to third embodiments of the present invention can form various atomic layers. For example, at least one thin film layer of a metal thin film layer, an oxide thin film layer, a nitride thin film layer, a carbide thin film layer, and a sulfide thin film layer can be formed. According to one embodiment, the source gas for forming the metal thin film layer is one of TMA (Tri Methyl Aluminum), TEA (Tri Ethyl Aluminum) and DMACl (Di Methyl Aluminum Chloride) Gas. ≪ / RTI > At this time, the purge gas may be any one of argon (Ar), nitrogen (N2), and helium (He), or a mixture of two or more gases. According to another embodiment, the source gas for forming the silicon thin film layer may be one of silane (SiH4), disilane (Si2H6) and silicon tetrafluoride (SiF4) containing ricons, May be one of an oxygen gas and an ozone gas. At this time, the purge gas may be any one of argon (Ar), nitrogen (N2), and helium (He), or a mixture of two or more gases. At this time, the source gas, the purge gas, and the reaction gas are not limited to these, and may be changed according to the needs of those skilled in the art. Hereinafter, an atomic layer deposition apparatus according to a first embodiment of the present invention will be described with reference to FIGS. 1 and 2. FIG.

FIG. 1 is a view for explaining an atomic layer deposition apparatus according to a first embodiment of the present invention, and FIG. 2 is a view for explaining a section A-A 'of an atomic layer deposition apparatus according to a first embodiment of the present invention. Particularly, Fig. 2 shows a cross-sectional view assuming that W1 in Fig. 1 is positioned below the gas supply module 100. Fig.

1 and 2, an atomic layer deposition apparatus 10 according to a first embodiment of the present invention is configured to deposit a deposition gas including a source gas, a purge gas, and a reactive gas simultaneously on another region of a substrate to be deposited W2, W3, and W4, which are provided on one side of the gas supply module 100, for example, and which are disposed on the lower side of the gas supply module 100, ). ≪ / RTI > Hereinafter, each configuration will be described in detail.

Referring to FIG. 1, the gas supply module 100 may be symmetrical with respect to the center line of the stage 180. That is, the gas supply module 100 may be integrally formed between one end and the other end of the stage 180 through the center line of the stage 180.

The stage 180 can rotate (R) the deposited deposition target substrate W1, W2, W3, W4. Accordingly, since the substrate W1, W2, W3, W4 to be deposited passes under the gas supply module 100 by the rotation of the stage 180, the atomic layer deposition gas is supplied and the substrate W1 W3, W4), atomic layer thin films can be deposited.

Although it has been assumed in the example of FIG. 1 that four substrates to be deposited are placed on the stage 180, it is needless to say that a seating part can be provided so that a smaller or larger number of substrates to be deposited can be seated. 1, it is assumed that the stage 180 is circular, but it goes without saying that the stage 180 may have a different shape. Although it has been assumed that the substrate to be deposited is circular like a wafer, it may be of a different shape.

Referring to FIG. 2, the gas supply module 100 according to the first embodiment of the present invention includes a source gas supply portion 132b for injecting a source gas, first and second purge gas supply portions 110a and 110b ), And first and second reaction gas supply units 132a and 132c for injecting a reaction gas. The gas supply module 100 may further include a first outer purge gas supply part 115a and a second outer purge gas supply part 115b disposed at both ends of the gas supply module 100. [

The first and second purge gas supply units 110a and 110b and the first and second reaction gas supply units 132a and 132c may be formed in the same direction as the rotation direction of the substrate to be deposited As shown in FIG.

More specifically, the first purge gas supply unit 115a, the first reaction gas supply unit 132a, the first purge gas supply unit 110a, the source gas supply unit 132b, the second purge gas supply unit 110b, The second reaction gas supply unit 132c and the second outer purge gas supply unit 115b.

The first and second outer purge gas supply units 115a and 115b and the first and second purge gas supply units 110a and 110b are supplied with purge gas from a purge gas supply source 150, It can be sprayed toward the target substrate. The source gas supply unit 132b may receive the source gas from the source gas source 140 and may inject the source gas toward the substrate to be deposited. In addition, the first and second reaction gas supply units 132a and 132c may receive the reaction gas from the reaction gas supply source 160 and may spray the supplied reaction gas toward the substrate to be deposited.

According to one embodiment, each gas supply 115a, 132a, 110a, 132b, 110b, 132c, 115b of the gas supply module may be configured to inject more deposition gas at the periphery than at the center of the stage 180. [ For example, the injection ports of the respective gas supply portions 115a, 132a, 110a, 132b, 110b, 132c, and 115b of the gas supply module may be larger at the periphery than the center portion of the stage 180. [ This takes into consideration that, when the angular velocities of the stages are equal, the linear velocity of the peripheral portion located radially outward of the center portion of the stage is larger. Accordingly, a certain atomic layer thin film can be deposited in the region of the substrate to be deposited located in the center of the stage 180 or in the region of the substrate to be deposited located in the peripheral portion of the stage 180.

An exhaust port for exhausting the injected reaction gas may be disposed on one side of the first reaction gas supply part 132a and the second reaction gas supply part 132c. More specifically, exhaust ports 134a and 136a for exhausting the reaction gas injected from the first reaction gas supply unit 132a may be directly disposed on both sides of the first reaction gas supply unit 132a. The exhaust ports 134a and 136a can prevent the reaction gas from entering another region outside the selected injection region by collecting the injected reaction gas in the direction opposite to the injection direction. Exhaust ports 134c and 136c for exhausting the reaction gas injected from the second reaction gas supply part 132c may be disposed directly adjacent to both sides of the second reaction gas supply part 132c. The exhaust ports 134c and 136c can prevent the reactant gas from entering another region outside the selected injection region by collecting the injected reactant gas in the direction opposite to the injection direction.

On one side of the source gas supply part 132b, an exhaust port for exhausting the injected source gas may be disposed. More specifically, exhaust ports 134b and 136b for exhausting the source gas injected from the source gas supply unit 132b may be disposed directly adjacent to both sides of the source gas supply unit 132b. The exhaust ports 134b and 136b can prevent the source gas from entering another region outside the selected ejection region by collecting the injected source gas in the direction opposite to the ejection direction.

According to one embodiment, the exhaust ports 134a, 136a, 134b, 136b, 134c, and 136c may communicate with a bar dry pump 170. [ The reactive gas and / or the source gas that is out of the corresponding space of the substrate among the reactive gas and / or the source gas injected in the top pumping manner may be exhausted by driving the barometric pump 170 .

Hereinafter, a method of driving the atomic layer deposition apparatus according to the first embodiment of the present invention will be described.

Each gas supply part of the gas supply module 100 can simultaneously inject gas into the corresponding space division area. For example, the first outer purge gas supply unit 115a injects purge gas into the A0 region, the first reaction gas supply unit 132a injects the reaction gas into the A1 region, and the first purge gas supply unit 110a ) Injects the purge gas into the A2 region, the source gas supplying portion 132b injects the source gas into the A3 region, the second purge gas supplying portion 110b injects the purge gas into the A4 region, The first outer purge gas supplying unit 132c may inject the reactive gas into the A5 region and the second outer purge gas supplying unit 115B may inject the purge gas into the A6 region. These gases can be injected simultaneously.

At this time, the exhaust ports 134a and 136a disposed on both sides of the first reaction gas supply section 132a are capable of exhausting the reaction gas entering the outside of the area A1, and the exhaust gas is supplied to both sides of the source gas supply section 132b The disposed exhaust ports 134b and 136b are capable of exhausting the source gas entering the area outside the area A3 and the exhaust ports 134c and 136c disposed on both sides of the second reaction gas supply part 132c enter the area outside the area A5 It is possible to exhaust the reaction gas. Accordingly, the mixing of the deposition gases is prevented, so that a high-quality thin film can be provided.

When the substrate W1 to be deposited enters the lower side of the gas supply module 100 by the rotation of the stage 180, the regions A0, A1, A2, A3, A4, A5, and A6 sequentially pass through. Thus, each region of the substrate W1 to be deposited can be provided with a source gas, a purge gas, a reactive gas, and a purge gas while passing through the regions A0, A1, A2, A3, A4, A5 and A6. Therefore, an atomic layer thin film can be deposited on the substrate W1 to be deposited. Particularly, when the stage 180 makes one revolution, the substrate W1 to be deposited passes through the gas supply module 100 twice, and therefore, when the stage rotates once, two layers of atomic layers are deposited on the substrate to be deposited .

In addition, the atomic layer deposition apparatus according to the first embodiment of the present invention can provide a continuous atomic layer deposition process. For smooth atomic layer deposition, the reaction gas supply time is twice as long as the source gas supply time. This is because the time required for the reaction gas to react with the source gas of the substrate to be deposited is required. According to the first embodiment of the present invention, the substrate to be deposited, which has passed through the source gas supply unit at the upper end of the stage, passes through the second reaction gas supply unit, and the second reaction gas And passes through the supply part. That is, since the gas supply module located at the lower stage of the stage injects the source gas and the reaction gas from the gas supply module located at the upper end of the stage, the reaction gas is further injected to the substrate to be vaporized, . As a result, it is possible to provide a high-quality thin film, so that the stage can be continuously rotated, thereby improving the productivity.

In addition, the atomic layer deposition apparatus according to the first embodiment of the present invention can minimize the mixing of gas by the stage rotation through the first and second outer purge gas supply units 115a and 115b. Since the first outer purge gas supply unit 115a is disposed outside the first reaction gas supply unit 132a, the reaction gas injected from the first reaction gas supply unit 132a is supplied to the outside of the gas supply module 100 Can be prevented from being provided. Since the second outer purge gas supply unit 15b is disposed outside the second reaction gas supply unit 132c so that the reaction gas injected from the second reaction gas supply unit 132c is supplied to the gas supply module 100, It can be prevented from being provided to the outside of the apparatus. Accordingly, even if an airflow is generated by the rotation of the stage 180, it is possible to shut off the purge gas through which the reaction gas is supplied in an undesired direction. That is, the reaction gas injected from the upper end of the stage can be prevented from flowing to the lower end of the stage. Accordingly, the atomic layer deposition apparatus according to the first embodiment of the present invention can minimize the mixing of gases, and thus can provide a high-quality atomic layer thin film.

In addition, the atomic layer deposition apparatus according to the first embodiment of the present invention can perform a space division atomic layer deposition process as a plurality of substrates to be deposited are rotated while being placed thereon. Accordingly, the conventional space division type atomic layer deposition apparatus requires an additional space such as a loading space, a deposition space, and an unloading space with respect to a substrate to be deposited. However, according to the first embodiment of the present invention, It is possible to reduce the size of the apparatus (foot print).

The atomic layer deposition apparatus according to the first embodiment of the present invention has been described with reference to FIGS. 1 and 2. FIG. 3 and 4, an atomic layer deposition apparatus according to a second embodiment of the present invention will be described.

FIG. 3 is a view for explaining an atomic layer deposition apparatus according to a second embodiment of the present invention, and FIG. 4 is a cross-sectional view taken along line B-B 'of an atomic layer deposition apparatus according to a second embodiment of the present invention.

Referring to FIG. 3, the atomic layer deposition apparatus 20 according to the second embodiment of the present invention may include four first to fourth sub gas supply modules 200a, 200b, 200c, and 200d . The sub gas supply modules 200a, 200b, 200c, and 200d may be arranged to be symmetrical with respect to the center line of the stage 280. [ For example, the four sub-gas supply modules 200a, 200b, 200c, and 200d may be annularly arranged with a phase difference of, for example, 90 degrees. Hereinafter, for convenience of explanation, the sub gas supply module will be abbreviated as a gas supply module.

The first to fourth gas supply modules 200a, 200b, 200c, and 200d may deposit the same or different kinds of atomic layer thin films. For example, the first and third gas supply modules 200a, 200c and the second and fourth gas supply modules 200b, 200d may provide atomic layer deposition gas to deposit different atomic layer films have. Alternatively, it is needless to say that the first to fourth gas supply modules 200a, 200b, 200c, and 200d may all provide a deposition gas to deposit the same type of atomic layer thin film.

On the other hand, the stage 280 can rotate the deposited deposition target substrate W1, W2, W3, W4. Accordingly, since the substrate W1, W2, W3, and W4 passes through the gas supply modules 200a, 200b, 200c, and 200d by the rotation of the stage 180, the substrates W1, W4 may be deposited with atomic layer thin films. In addition, when the stage 180 makes one revolution, four atomic layer thin films can be deposited on each substrate to be deposited by four gas supply modules.

In the example of FIG. 3, it is assumed that four substrates to be deposited are placed on the stage 180, but it is needless to say that a seating portion may be provided so that a smaller or larger number of substrates to be deposited can be seated. 3, it is assumed that the stage 180 is circular, but it goes without saying that the stage 180 may have a different shape.

Since the first to fourth gas supply modules 200a, 200b, 200c, and 200d have different positions and correspond to each other, the first gas supply module 200a will be described below.

Referring to FIG. 4, the first gas supply module 200a according to the second embodiment of the present invention includes a source gas supply part 232b for injecting a source gas, first and second purge gas supply parts 210a , 210b, and first and second reaction gas supply units 232a, 232c for injecting a reaction gas. The first gas supply module 200a may further include a first outer purge gas supply unit 215a and a second outer purge gas supply unit 215b disposed at both ends of the first gas supply module 200a .

According to one embodiment, the source gas supply unit 232b, the first and second purge gas supply units 210a and 210b, and the first and second reaction gas supply units 232a and 232c may change the direction of the deposition target .

More specifically, the first purge gas supply unit 215a, the first reaction gas supply unit 232a, the first purge gas supply unit 210a, the source gas supply unit 232b, the second purge gas supply unit 210b, The second reaction gas supply unit 232c, and the second outer purge gas supply unit 215b.

The first and second outer purge gas supply units 215a and 215b and the first and second purge gas supply units 210a and 210b are provided with a purge gas from a purge gas supply source 250, It can be sprayed toward the target substrate. The source gas supply unit 232b may receive the source gas from the source gas source 240 and may inject the source gas toward the substrate to be deposited. The first and second reaction gas supply units 232a and 232c may receive the reaction gas from the reaction gas supply source 260 and may spray the supplied reaction gas toward the deposition target substrate.

According to one embodiment, each gas supply 215a, 232a, 210a, 232b, 210b, 232c, 215b of the first gas supply module can be configured to inject more deposition gas at the periphery than at the center of the stage 280 have. For example, the injection ports of the gas supply portions 215a, 232a, 210a, 232b, 210b, 232c, and 215b of the first gas supply module may be larger at the peripheral portion than the center portion of the stage 280. [ This takes into consideration that, when the angular velocities of the stages are equal, the linear velocity of the peripheral portion located radially outward of the center portion of the stage is larger. Accordingly, a certain atomic layer thin film can be deposited in the region of the substrate to be deposited located in the center of the stage 280 or in the region of the substrate to be deposited located in the peripheral portion of the stage 280.

An exhaust port for exhausting the injected reaction gas may be disposed on one side of the first reaction gas supply unit 232a and the second reaction gas supply unit 232c. More specifically, exhaust ports 234a and 236a for exhausting reaction gas injected from the first reaction gas supply unit 232a may be directly disposed on both sides of the first reaction gas supply unit 232a. The exhaust ports 234a and 236a can prevent the reaction gas from entering the other regions other than the selected injection region by collecting the injected reaction gas in the direction opposite to the injection direction. In addition, exhaust ports 234c and 236c for exhausting reaction gas injected from the second reaction gas supply part 232c may be disposed directly adjacent to both sides of the second reaction gas supply part 232c. The exhaust ports 234c and 236c can prevent the reaction gas from entering the other regions other than the selected injection region by collecting the injected reaction gas in the direction opposite to the injection direction.

An exhaust port for exhausting the injected source gas may be disposed on one side of the source gas supply section 232b. More specifically, exhaust ports 234b and 236b for exhausting the source gas injected from the source gas supply unit 232b may be directly adjacent to both sides of the source gas supply unit 230b. The exhaust ports 234b and 236b can prevent the source gas from entering another region outside the selected injection region by collecting the injected source gas in the direction opposite to the injection direction.

According to one embodiment, the exhaust ports 234a, 236a, 234b, 236b, 234c, and 236c may communicate with a bar dry pump 270. The reactive gas and / or the source gas that is out of the corresponding space division region of the substrate among the reactive gas and / or the source gas injected may be exhausted by driving the barometric pump 270.

Hereinafter, a method of driving an atomic layer deposition apparatus according to a second embodiment of the present invention will be described.

Each gas supply part of the first gas supply module 200a can simultaneously inject gas into the corresponding space division area. For example, the first outer purge gas supply unit 215a injects purge gas into the A0 region, the first reaction gas supply unit 232a injects the reaction gas into the A1 region, and the first purge gas supply unit 210a ) Injects the purge gas into the A2 region, the source gas supplying portion 232b injects the source gas into the A3 region, the second purge gas supplying portion 210b injects the purge gas into the A4 region, The second outer purge gas supply unit A6 may inject the purge gas into the region A6.

At this time, the exhaust ports 234a and 236a disposed on both sides of the first reaction gas supply section 232a are capable of exhausting the reaction gas entering the outside of the A1 region, and the reaction gas entering the both sides of the source gas supply section 232b The exhaust holes 234c and 236c disposed on both sides of the second reaction gas supply portion 232c can enter the outside of the region A5 It is possible to exhaust the reaction gas. Accordingly, the mixing of the deposition gases is prevented, so that a high-quality thin film can be provided.

Although the detailed description is omitted, the first to third gas supply modules 200b, 200c and 200d may be driven in the same manner as the first gas supply module 200a.

When the substrate W1 to be deposited reaches the lower side of the first gas supply module 200a by the rotation of the stage 280, the substrate W1 sequentially passes through the areas A0, A1, A2, A3, A4, A5, and A6 . Thus, each region of the substrate W1 to be deposited can be provided with a source gas, a purge gas, a reactive gas, and a purge gas while passing through the regions A0, A1, A2, A3, A4, A5 and A6. Therefore, an atomic layer thin film can be deposited on the substrate W1 to be deposited.

Particularly, when the stage 280 makes one rotation, the substrate W1 to be deposited passes through the first to fourth gas supply modules 200a, 200b, 200c and 200d, so that four layers of atomic layer thin films can be deposited . In addition, it is a moron that four layers of atomic layer thin films can be deposited on the other deposition target substrates W2, W3 and W4 once the stage 280 makes one rotation.

In addition, the atomic layer deposition apparatus according to the second embodiment of the present invention can provide a continuous atomic layer deposition process. For smooth atomic layer deposition, the reaction gas supply time is twice as long as the source gas supply time. This is because the time required for the reaction gas to react with the source gas of the substrate to be deposited is required. According to the second embodiment of the present invention, the substrate to be deposited, which has passed through the source gas supply portion of the first gas supply module, passes through the second reaction gas supply portion, and by the additional rotation of the stage, And passes through the gas supply unit. That is, since the second gas supply module further injects the reactive gas onto the substrate to be deposited, on which the source gas and the reactive gas are injected in the first gas supply module, it is possible to provide a sufficient processing time for the reactive gas deposition. As a result, it is possible to provide a high-quality thin film, so that the stage can be continuously rotated, thereby improving the productivity.

In addition, the atomic layer deposition apparatus according to the second embodiment of the present invention can minimize the mixing of gas by the stage rotation through the first and second outer purge gas supply units 215a and 215b. Since the first outer purge gas supply unit 215a is disposed outside the first reaction gas supply unit 232a, the reaction gas injected from the first reaction gas supply unit 232a is supplied to the first gas supply module 200a It can be prevented from being provided outside. Since the second outer purge gas supply unit 215b is disposed outside the second reaction gas supply unit 232c, the reaction gas injected from the second reaction gas supply unit 232c is supplied to the first gas supply module 200a To the outside of the housing. Accordingly, even if an airflow is generated by the rotation of the stage 280, it is possible to shut off the purge gas through which the reaction gas is supplied in an undesired direction. For example, the reaction gas injected from the first gas supply module 200a can be prevented from flowing into the second to fourth gas supply modules 200b, 200c and 200d. Accordingly, the atomic layer deposition apparatus according to the second embodiment of the present invention can minimize the mixing of gases, and thus can provide a high-quality atomic layer thin film.

In addition, the atomic layer deposition apparatus according to the second embodiment of the present invention can perform a space division atomic layer deposition process as a plurality of substrates to be deposited are rotated while being placed thereon. Accordingly, the conventional space division type atomic layer deposition apparatus requires additional space such as a loading space, a deposition space, and an unloading space with respect to a substrate to be deposited. However, according to the second embodiment of the present invention, It is possible to reduce the size of the apparatus (foot print).

The atomic layer deposition apparatus according to the second embodiment of the present invention has been described with reference to FIGS. An atomic layer deposition apparatus according to a third embodiment of the present invention will be described with reference to FIG.

5 is a view for explaining an atomic layer deposition apparatus according to a third embodiment of the present invention.

5, the gas supply module 300 of the atomic layer deposition apparatus 30 according to the third embodiment of the present invention includes a first gas supply module 300a and a first gas supply module 300a, And a second gas supply module 300b positioned adjacent to the second gas supply module 300b.

The configurations of the first and second gas supply modules 300a and 300b correspond to those described above with reference to the first and second embodiments. That is, the first and second gas supply modules 300a and 300b may include a first purge gas supply unit, a first reaction gas supply unit, a first purge gas supply unit, a source gas supply unit, a second purge gas supply unit, The supply portion and the second outer purge gas supply portion may be disposed adjacent to each other. Further, exhaust ports may be provided on both sides of the first and second reaction gas supply units and the source gas supply unit. A detailed description thereof will be omitted.

According to the third embodiment of the present invention, as the stage 380 makes one rotation, the substrate to be vapor-deposited is supplied with the upper ends of the first and second gas supply modules 300a and 300b, (300a, 300b), so that four layers of atomic layer thin films can be deposited.

The third embodiment of the present invention is different from the first embodiment of the present invention in that the gas supply module of the first embodiment of the present invention described above is disposed adjacent to the gas supply module. It goes without saying that the third embodiment of the present invention is also applicable to the second embodiment of the present invention described above. In this case, eight layers of atomic layer thin films can be deposited as the stage makes one revolution.

The atomic layer deposition apparatus according to the third embodiment of the present invention has been described with reference to FIG. The atomic layer deposition method according to the first embodiment of the present invention will be described below with reference to FIG.

FIG. 6 is a view for explaining an atomic layer deposition method according to the first embodiment of the present invention, and FIGS. 7 and 8 are views for explaining the atomic layer deposition method according to the first embodiment of the present invention in detail. admit. In particular, FIGS. 7 and 8 are diagrams illustrating the implementation of the atomic layer deposition method according to the first embodiment through the atomic layer deposition apparatus according to the first embodiment of the present invention.

Referring to FIG. 6, the atomic layer deposition method according to the first embodiment of the present invention includes the steps of rotating a substrate to be deposited to form a first atomic layer through a gas supply module for supplying atomic layer deposition gas to the substrate to be deposited, (S110) depositing a second atomic layer on the substrate to be deposited through the gas supply module by further rotating the substrate to be deposited (S110).

Referring to FIG. 7, in step S100, the substrate W1 to be deposited is rotated (in the R direction), and the first atom W1 is irradiated through the gas supply module 100 for supplying the atomic layer deposition gas to the deposition target substrate W1. Layer can be deposited.

That is, as the stage 180 rotates (in the R direction) while the substrate W1 to be deposited is positioned at the upper left side of the gas supply module 100 (Fig. 7A) A source gas, a purge gas, a reactive gas, and a purge gas may be provided through the gas supply module 100 in a space division manner. Accordingly, after the deposition target substrate W1 passes through the gas supply module 100 (FIG. 7 (b)), a first atomic layer may be deposited on the deposition target substrate W1.

8, in step S110, the substrate W1 to be deposited is further rotated (in the R direction), and a second atomic layer is formed on the substrate W1 to be deposited through the gas supply module 100 Can be deposited.

That is, as the stage 180 rotates (in the R direction) while the substrate W1 to be deposited is located on the lower right side of the gas supply module 100 (Fig. 8A), the substrate W1, A source gas, a purge gas, a reactive gas, and a purge gas may be provided through the gas supply module 100 in a space division manner. Accordingly, after the deposition target substrate W1 has passed through the gas supply module 100 (FIG. 8 (b)), a second atomic layer may be deposited on the deposition target substrate W1.

That is, as the stage 180 makes one revolution, a two-layered atomic layer thin film can be deposited on the substrate W1 to be deposited.

In addition, since the substrate W1 to be deposited is supplied with the source gas at the upper end of the gas supply module and then receives the reaction gas twice from the lower end of the gas supply module to receive the source gas again, . Therefore, it is possible to provide a high-quality thin film even in a space division manner.

In the embodiment described with reference to FIGS. 7 and 8, it is assumed that the substrate to be deposited is loaded on one stage for the sake of convenience of description. However, it is needless to say that four substrates to be deposited can be loaded on the stage .

Although it has been described that the atomic layer deposition method according to the first embodiment of the present invention is implemented in the atomic layer deposition apparatus according to the first embodiment of the present invention, the atomic layer deposition according to the first embodiment of the present invention It should be understood that the method can also be implemented in the atomic layer deposition apparatus according to the second and third embodiments of the present invention. If implemented in atomic layer deposition equipment according to the second and third embodiments, four atomic layer films can be deposited as the stage makes one revolution.

The atomic layer deposition method according to the first embodiment of the present invention has been described with reference to FIGS. Hereinafter, a method of depositing an atomic layer according to a second embodiment of the present invention will be described with reference to FIGS.

FIG. 9 is a view for explaining an atomic layer deposition method according to a second embodiment of the present invention, and FIGS. 10 to 12 are views for explaining a method of atomic layer deposition according to a second embodiment of the present invention . Particularly, FIGS. 10 to 12 illustrate the implementation of the atomic layer deposition method according to the second embodiment through the atomic layer deposition apparatus according to the second embodiment of the present invention.

Referring to FIG. 9, the atomic layer deposition method according to the second embodiment of the present invention is a method of depositing a plurality of deposition target substrates including a first deposition target substrate and a second deposition target substrate in a first direction A first atomic layer is deposited on the first deposition target substrate through a first gas supply module and a second atomic layer is deposited on the second deposition target substrate so as to be spaced apart from the first gas supply module in an annular direction A first step (S200) for simultaneously depositing a second atomic layer through a first gas supply module, a second gas supply module, and a second gas supply module Depositing the first atomic layer through a first gas supply module and depositing a second atomic layer on the second deposition target substrate through the second gas supply module to the second deposition target substrate, (S210) . ≪ / RTI >

Referring to FIG. 10, in step S200, as the stage 280 rotates in the first direction (direction R1), the substrate W1 is transferred to the first deposition target substrate W1 through the first gas supply module 200a, And a second gas supply module 200b disposed on the second deposition target substrate W2 so as to be spaced apart from the first gas supply module 200a in the annular direction, Can be deposited at the same time.

That is, as the stage W2 rotates (in the R1 direction) with the deposition target substrate W1 positioned on the left side of the first gas supply module 200a (Fig. 10A), the deposition target substrate W1 The source gas, the purge gas, the reactive gas, and the purge gas may be provided in a space division manner through the first gas supply module 200a. Accordingly, after the deposition target substrate W1 passes through the first gas supply module 200a (FIG. 10 (b)), a first atomic layer may be deposited on the deposition target substrate W1.

As the stage 280 is rotated (in the R1 direction) with the substrate W2 to be deposited positioned at the upper end of the second gas supply module 200b (Fig. 10 (a)), The source gas, the purge gas, the reactive gas, and the purge gas may be provided in a space division manner through the second gas supply module 200b. Accordingly, after the deposition target substrate W2 passes through the second gas supply module 200b (FIG. 10 (b)), a second atomic layer may be deposited on the deposition target substrate W2. At this time, the first and second atomic layers may be simultaneously deposited.

In this case, when the first gas supply module 200a and the second gas supply module 200b inject the same gas, the first and second atomic layers may be atomic layers of the same kind. Alternatively, when the first gas supply module 200a and the second gas supply module 200b inject different kinds of gas, the first and second atomic layers may be different kinds of atomic layers .

As the stage 280 rotates, it is needless to say that atomic layer thin films can also be deposited on the substrates W3 and W3 to be deposited.

Referring to FIG. 11, in step S210, the stage 280 is rotated (in the R2 direction) in a second direction opposite to the first direction, and the first gas supply module The first atomic layer may be additionally deposited and the second atomic layer may be further deposited on the second substrate to be vapor-deposited on the second substrate to be vapor-deposited, through the second gas supply module.

That is, step S210 is performed after step S200, and the first deposition target substrate W1 is further passed through the first gas supply module 200a to further deposit the first atomic layer, and the second deposition target substrate W2, Through the second gas supply module 200b, the second atomic layer can be further deposited. Step S210 may be particularly useful when the first gas supply module 200a and the second gas supply module 200b inject different kinds of gas. More specifically, the first atomic layer is deposited as two layers on the first deposition target substrate W1 and the first atomic layer and the second atomic layer as the second deposition layer are deposited on the second deposition target substrate W2 . At this time, the first and second additional atomic layers may be deposited at the same time.

Thereafter, step S200 is repeated so that the first atomic layer is once again deposited on the first deposition target substrate W1 and the second atomic layer is once again deposited on the second deposition target substrate W2 . This step may be omitted.

Thereafter, the stage 280 may further rotate in the first direction. 12, as the stage W1 rotates (in the R1 direction) while the substrate W1 to be deposited is positioned above the second gas supply module 200b (Fig. 12 (a) The target substrate W1 may be provided with a source gas, a purge gas, a reactive gas, and a purge gas in a space division manner through the second gas supply module 200b. Accordingly, after the deposition target substrate W1 passes through the second gas supply module 200b (FIG. 12 (b)), a second atomic layer may be deposited on the deposition target substrate W1.

As the stage 280 is rotated (in the R1 direction) with the deposition target substrate W2 positioned on the right side of the third gas supply module 200c (Fig. 12A), the deposition target substrate W2 The source gas, the purge gas, the reactive gas, and the purge gas may be provided in a space division manner through the third gas supply module 200c. Accordingly, after the deposition target substrate W2 passes through the third gas supply module 200c (FIG. 12 (b)), a third atomic layer may be deposited on the deposition target substrate W2. At this time, the third atomic layer can be deposited simultaneously with the second atomic layer.

The first gas supply module 200a and the third gas supply module 200c inject the same deposition gas to each other and the second gas supply module 200b is connected to the first gas supply module 200a, 3 gas supply module 200c and the other deposition gas. Accordingly, the first and third atomic layers may be the same atomic layer, and the second atomic layer may be a different atomic layer than the first and third atomic layers. At this time, the fourth gas supply module 200d may inject the same kind of deposition gas as the second gas supply module 200b.

According to the atomic layer deposition method according to the second embodiment of the present invention, convenience can be provided in that heterogeneous atomic layers can be easily formed. That is, the first gas supply module and the third gas supply module may provide different kinds of atomic layer deposition gas with the second gas supply module and the fourth gas supply module. Thereby, heterogeneous atomic layers can be deposited on the substrate to be deposited in one chamber.

Further, for example, after the first substrate to be vapor-deposited passes through the first gas supply module and the first atomic layer is deposited on the first substrate to be vapor-deposited, the first substrate to be vapor- By passing, a first atomic layer and a different kind of second atomic layer can be deposited on the first atomic layer. As a result, a hybrid atomic layer can be deposited. The hybrid atom layer may be composed of a first inorganic layer-a second inorganic layer, an inorganic layer-an organic layer, an organic layer-an inorganic layer, or a first organic layer-a second organic layer.

Alternatively, each of the first to fourth gas supply modules 200a, 200b, 200c, and 200d may provide different kinds of atomic layer deposition gas, and the first to fourth gas supply modules 200a and 200b , 200c, 200d may provide the same kind of atomic layer.

The atomic layer deposition apparatus and atomic layer deposition method according to embodiments of the present invention can be applied to a deposition technique of a semiconductor, a display, and an energy element.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the scope of the present invention is not limited to the disclosed exemplary embodiments. It will also be appreciated that many modifications and variations will be apparent to those skilled in the art without departing from the scope of the present invention.

10, 20, 30: First to third atomic layer deposition equipment
100, 200, 300: gas supply module
180, 280, 380: stage
W1. W2, W3, W4: substrates to be deposited

Claims (13)

A gas supply module that simultaneously injects an atomic layer deposition gas including a source gas, a purge gas, and a reactive gas into another region of the substrate to be deposited at the same time; And
And a stage provided on one side of the gas supply module and including a seating part on which the substrate to be deposited is placed,
When the stage makes one revolution, two or more atomic layers are deposited on the substrate to be deposited,
The gas supply module includes a first purge gas supply part, a first purge gas supply part, a first purge gas supply part, a second purge gas supply part, and a second reaction gas supply part, along the transfer path of the substrate to be deposited, Wherein the gas supply module further includes an exhaust port for exhausting gas to both sides of the first reaction gas supply section, the source gas supply section, and the second reaction gas supply section,
Wherein the source gas supply unit is located between the first reaction gas supply unit and the second reaction gas supply unit,
Wherein the substrate is sequentially supplied with the reaction gas from the first reaction gas supply unit, the source gas from the source gas supply unit, and the reaction gas sequentially from the second reaction gas supply unit as the stage rotates, The reaction gas is supplied again from the second reaction gas supply unit and the source gas and the reaction gas are supplied again from the source gas supply unit and the first reaction gas supply unit. delete delete The method according to claim 1,
And the exhaust port discharges gas in a direction opposite to a direction from the exhaust port toward the substrate to be deposited. The method according to claim 1,
Wherein the gas supply module is configured to inject more deposition gas at a periphery than a center portion of the stage. The method according to claim 1,
Wherein the gas supply module is comprised of sub gas supply modules and the sub gas supply module is annularly arranged at an angle. The method according to claim 1,
Wherein the gas supply module comprises sub-gas modules providing different source gases,
Wherein when the stage rotates, different types of thin films are formed on the substrate to be deposited. Depositing a first atomic layer through a gas supply module that rotates the substrate to be deposited and supplies atomic layer deposition gas to the substrate to be deposited; And
Depositing a second atomic layer on the substrate to be deposited through the gas supply module by further rotating the substrate to be deposited,
When the substrate to be deposited is rotated once, two or more atomic layers are deposited on the substrate to be deposited,
The gas supply module includes a first purge gas supply part, a first purge gas supply part, a first purge gas supply part, a second purge gas supply part, and a second reaction gas supply part, along the transfer path of the substrate to be deposited, And a second outer purge gas supply section, wherein the gas supply module further includes an exhaust port for exhausting gas to both sides of the first reaction gas supply section, the source gas supply section, and the second reaction gas supply section
Wherein the source gas supply unit is located between the first reaction gas supply unit and the second reaction gas supply unit,
Wherein the substrate to be deposited is sequentially supplied with the reaction gas from the first reaction gas supply unit, the source gas from the source gas supply unit, and the reaction gas from the second reaction gas supply unit sequentially as the substrate to be deposited rotates, Wherein the reaction gas is supplied again from the second reaction gas supply unit and the reaction gas is supplied again from the source gas supply unit and the first reaction gas supply unit when the substrate is further rotated. delete delete delete delete delete
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