KR101185376B1 - Gas injecting assembly and Apparatus for depositing thin film on wafer using the same - Google Patents

Abstract

The gas injection assembly according to the present invention is rotatably installed in a reactor forming a reaction space therein, and is installed on an upper portion of a substrate support having a plurality of substrate seating portions for mounting a substrate on an upper surface thereof. A plurality of source gas injection units disposed along a circumferential direction of the substrate support to supply the onto the substrate support; And a plurality of purge gas injection units disposed between the source gas injection units for injecting different types of gas among the plurality of source gas injection units to inject a purge gas for purging the source gas onto the substrate support. The source gas injection unit and the purge gas injection unit is provided with a gas inlet for introducing the source gas and the purge gas on the upper surface, and the lower surface of the source gas injection unit and the purge gas injection unit, respectively Gas injection holes are formed, and the source gas injection units and the purge gas injection units are disposed adjacent to each other, and two or more injection units injecting the same gas to each other to form a plurality of gas injection blocks, A center for supplying a purge gas for purging the source gases to a central portion of a gas injection assembly If further comprises a gas injection unit, and wherein the plurality of purge gas injection unit and the raw material gas injection units and is arranged radially in the peripheral direction of the central purge gas injection unit.

Description

Gas injecting assembly and Apparatus for depositing thin film on wafer using the same}

The present invention relates to a gas injection assembly and a thin film deposition apparatus to which a gas injection assembly is applied to sequentially supply a source gas and a purge gas to deposit a thin film on a wafer.

As the scale of semiconductor devices is gradually reduced, the demand for ultra-thin films is increasing. In addition, as the contact hole size is reduced, the problem of step coverage becomes more and more serious. As a new deposition method capable of overcoming various problems, an atomic layer deposition (ALD) method is emerging. In general, the atomic layer deposition method is a method of separating and supplying each source gas to the substrate to form a thin film by the surface saturation of the source gases.

The principle of the atomic layer thin film deposition method is as follows. When the first raw material gas is supplied into the reactor, the monoatomic layer is chemisorbed on the surface of the substrate through reaction with the surface of the substrate. However, when the surface of the substrate is saturated with the first raw material gas, the first raw material gases of the monoatomic layer or more do not form a chemisorption state due to non-reactivity between the same ligands, and are in a physical adsorption state. When a purge gas is supplied, the first raw material gases in the physical adsorption state are removed by the purge gas. When the second raw material gas is supplied on the first monoatomic layer, the second layer grows through the substitution reaction between the ligands of the first raw material gas and the second raw material gas, and the second raw material gases that do not react with the first layer are in the physical adsorption state. And is removed by the purge gas. And the surface of this second layer is in a state capable of reacting with the first raw material gas. This is one cycle and the thin film is deposited by repeating several cycles.

In order for the atomic layer deposition reaction to be stably maintained in the reactor, the first raw material gas and the second raw material gas must be separated from each other in the deposition space on the substrate and supplied into the reactor.

In US Patent No. 5,730,802, there is a gas injector that separates a reactor into partitions and supplies a first raw material gas, a second raw material gas, and a separation gas into a space partitioned by the partition wall, and the substrate holder rotates to deposit an atomic layer. A thin film deposition apparatus and a thin film deposition method are disclosed.

1 is a view showing a schematic configuration of a thin film deposition apparatus disclosed in the US patent. Referring to FIG. 1, the thin film deposition apparatus 9 is a reactor 1, a substrate holder 2 positioned inside the reactor 1 and designed to be rotatable, a source gas supply port 3 and 4, and a gas supply for separation. In order to prevent mixing of the sphere 5 and the source gas, the cross section is constituted by a partition wall 6 having a cross shape. The source gas supplied through the raw material gas supply ports 3 and 4 by the rotation of the substrate holder 2 and the separation gas supplied through the separating gas supply port 5 have a time difference above the substrate w. It is alternately supplied, and atomic layer deposition is performed.

Recently, as the size of a substrate increases, the importance of uniformity of a thin film deposited on the substrate increases. However, in the thin film deposition apparatus 9 according to the present invention, the gas is supplied onto the substrate w through the inlets 3, 4 and 5, as shown in FIG. 1. It is difficult for gas to be uniformly sprayed on (w). If the gas is not uniformly sprayed on the substrate w, the thickness of the deposited thin film is different depending on the position of the substrate w, that is, the uniformity of the thin film is not good, resulting in poor productivity. In addition, when the gas is not uniformly sprayed on the substrate w, it takes a long time until the monoatomic layer is chemically adsorbed on the entire surface of the substrate w, and thus there is a problem in that the waste gas is increased.

On the other hand, the conventional thin film deposition apparatus 1 as shown in Figure 1 has a problem that can not be used in accordance with various process conditions. Although it is common to deposit thin films using two kinds of source gases, three or more kinds of gases may be used. In a gap-fill process, an etching gas must be supplied to a substrate. In addition, the deposition time on the wafer is different according to the source gas, and the physically adsorbed strength is different, so the purging time should be different. However, in the conventional thin film deposition apparatus, four thin film deposition spaces are defined by cross-shaped partition walls, and gas supply ports 3, 4, and 5 for introducing gas into the four spaces are arranged one by one. There was a problem that it can not be used under various process conditions.

In addition, in the case of another conventional thin film deposition apparatus (not shown), a gas is installed in the center of the gas injection unit, and a gas is installed in the form of gas flowing into each gas injection device such as an injector through the gas distribution device. . In the case of such a device, not only the configuration is complicated, but also because the gas does not flow directly into the gas injection device but must pass through the gas distribution device, there is a problem in that the flow rate control is not performed smoothly, such as loss of flow rate in the process. In addition, such a device generally has a structure in which gas flows in from a gas distribution device into a gas supply device through a side of the gas supply device, not through an upper surface thereof. There is a limit in improving the uniformity of the thin film because the gas is not diffused sufficiently and the gas is concentrated in a specific area excessively.

US 5730802 B

The present invention is to solve the above problems, the gas can be supplied evenly on the substrate to improve the uniformity of the thickness of the thin film, to perform all the various processes according to the number of source gas, the type of source gas, etc. An object of the present invention is to provide a gas injection assembly capable of variously adjusting a gas injection position, a gas injection area, a gas injection amount, and the like.

In addition, another object of the present invention is to provide a thin film deposition apparatus that can be used in a variety of process conditions using the above-described gas injection assembly and can improve the thin film uniformity.

Gas injection assembly according to the present invention for achieving the above object, the reactor to form a reaction space therein; A substrate support part rotatably installed in the reactor, the substrate support part having a plurality of substrate seating parts on which a substrate is seated on an upper surface thereof; And a gas injection assembly installed on an upper portion of the substrate support and supplying gas to a plurality of substrates seated on the annoying substrate support, wherein the gas injection assembly supplies at least two heterogeneous source gases onto the substrate support. To this end, a plurality of source gas injection unit disposed in the circumferential direction of the substrate support; And a plurality of purge gas injection units disposed between the source gas injection units for injecting different types of gas among the plurality of source gas injection units to inject a purge gas for purging the source gas onto the substrate support. The source gas injection unit and the purge gas injection unit is provided with a gas inlet for introducing the source gas and the purge gas on the upper surface, and the lower surface of the source gas injection unit and the purge gas injection unit, respectively Gas injection holes are formed, and the source gas injection units and the purge gas injection units are disposed adjacent to each other, and two or more injection units injecting the same gas to each other to form a plurality of gas injection blocks, A center for supplying a purge gas for purging the source gases to a central portion of a gas injection assembly If further comprises a gas injection unit, and wherein the plurality of purge gas injection unit and the raw material gas injection units and is arranged radially in the peripheral direction of the central purge gas injection unit.

A partition wall may be provided between the plurality of gas injection blocks, and a distance from a lower surface of the partition wall to an upper surface of the substrate support part may be smaller than a distance from a lower surface of the gas injection block to an upper surface of the substrate support part.

The gas injection block may include a purge gas injection block in which the purge gas injection units are formed in a group, and a source gas injection block in which the source gas injection units are formed in a group, and the substrate support part from a lower surface of the purge gas injection block. The distance to the upper surface may be greater than the distance from the lower surface of the source gas injection block to the upper surface of the substrate support.

One of each of the central portion of the substrate support and the gas injection assembly may have a convex protrusion, and the other may have a concave insertion groove for accommodating the protrusion.

A buffer unit which does not discharge gas may be installed between the source gas injection unit and the purge gas injection unit so that the source gas injection unit and the purge gas injection unit are spaced apart from each other by a predetermined interval.

The gas injection assembly and the thin film deposition apparatus according to the present invention having the above-described configuration have the advantage that the gas can be uniformly sprayed over the entire area of the substrate, so that the thin film can be deposited with a uniform thickness.

In addition, the gas injection assembly and the thin film deposition apparatus according to the present invention can adjust the number and location of the gas injection unit, the gas injection area, the gas injection amount, etc., the gas injection unit, it is possible to perform various processes as one device There is an advantage that it can.

In addition, since the gas injection assembly and the thin film deposition apparatus according to the present invention directly flows into the gas injection unit without going through a separate device such as a gas distribution device, gas loss does not occur and gas flow rate can be accurately controlled. There is an advantage.

1 is a schematic perspective view for explaining a conventional thin film deposition apparatus.
Figure 2 is a schematic diagram illustrating a thin film deposition apparatus according to a preferred embodiment of the present invention.
3 is a schematic cross-sectional view taken along line III-III of FIG. 2.
4 is a schematic cross-sectional view taken along the line IV-IV of FIG. 2.
5 is a schematic perspective view for explaining a gas injection assembly according to a preferred embodiment of the present invention.
FIG. 6 is a schematic cross-sectional view taken along the line VI-VI of FIG. 5.
7 is a schematic diagram illustrating a thin film deposition apparatus according to another embodiment of the present invention.
8 is a schematic perspective view for explaining a gas injection assembly according to another embodiment of the present invention.
9 is a bottom view of the gas injection assembly shown in FIG. 8.

Hereinafter, with reference to the accompanying drawings, a gas injection assembly and a thin film deposition apparatus according to a preferred embodiment of the present invention will be described in more detail.

FIG. 2 is a schematic structural view illustrating a thin film deposition apparatus according to a preferred embodiment of the present invention, FIG. 3 is a schematic cross-sectional view taken along the line III-III of FIG. 2, and FIG. 4 is a schematic cross-sectional view taken along the line IV-IV of FIG. 2. .

2 to 4, the thin film deposition apparatus 100 according to the preferred embodiment of the present invention includes a reactor 10, a substrate support 20, and a gas injection assembly 50.

The reactor 10 has a bottom portion 11 and an outer wall portion 12. The bottom portion 11 is formed in the shape of a disc, the outer wall portion 12 is formed extending vertically upward from the edge of the bottom portion 11 is made of a closed curved shape. And the outer wall part 12 is provided with the board | substrate w conveyance path (not shown) which the board | substrate w enters and exits. When the gas injection assembly 50 to be described later is combined with the upper portion of the reactor 10, a reaction space 16 is formed inside the reactor 10. In this reaction space 16, a thin film is deposited on the substrate w by the source gas. A sealing member such as an O-ring (not shown) is interposed between the lower surface of the gas injection assembly 50 and the upper surface of the outer wall part 12 of the reactor 10 to seal the reaction space 16. And an exhaust means for discharging the unnecessary gas and particles remaining in the reactor 10 is provided in the reactor 10, between the substrate support 20 to be described later and the inner surface of the outer wall portion 12 of the reactor 10 It is preferable that an annular exhaust duct (not shown) is provided. The exhaust duct (not shown) is preferably connected to an exhaust pump (not shown) through an exhaust port to forcibly exhaust unnecessary gas in the reactor 10.

The substrate support part 20 is for supporting and rotating the substrate 10 of the reactor 10 and is installed in the reaction space 16 therein, and the susceptor 21, the substrate seating part 22, the shaft 23, A heater (not shown).

The susceptor 21 is rotatably arranged inside the reactor 10 in the shape of a disc. The susceptor 21 is provided with a plurality of concave substrate seating portions 22, in particular six in this embodiment, in order to seat the substrate w. As shown in FIG. 3, the substrate mounting parts 22 are spaced apart from each other at predetermined angular intervals along the circumferential direction of the upper surface of the substrate support part 20. One end of both ends of the shaft 23 is coupled to the bottom surface of the susceptor 21, and the other end is connected to a rotating means (not shown) such as a motor through the reactor 10. Therefore, when the shaft 23 rotates, the susceptor 21 rotates about the rotation center axis A. In addition, the shaft 23 is connected to the lifting means such as a motor and a ball screw assembly (not shown), so that the susceptor 21 is also raised and lowered when the shaft 23 is lifted. In the heater (not shown), a heater (not shown) for heating the substrate w is embedded in the lower part of the susceptor 21.

6 and 7 together with FIGS. 2 and 4 referenced above, a gas injection assembly 50 according to a preferred embodiment of the present invention will be described in more detail. FIG. 5 is a schematic perspective view illustrating a gas injection assembly according to a preferred embodiment of the present invention, and FIG. 6 is a schematic cross-sectional view taken along line VI-VI of FIG. 5.

The gas injection assembly 50 is for supplying gas to the substrate w seated on the substrate support 20, and is detachably coupled to the upper portion of the reactor 10. When the gas injection assembly 50 is coupled to the reactor 10, the bottom surface of the gas injection assembly 50 and the top surface of the substrate support 20 are disposed to face each other. The gas supplied from the gas injection assembly 50 onto the substrate support 20 is largely classified into three types, that is, source gas, purge gas, and etching gas. In order to supply these gases, the gas injection assembly 50 is provided in plurality. Source gas injection units 51 and 52, a plurality of purge gas injection units 53, and an etching gas injection unit 54. As shown in FIG. 4, the plurality of source gas injection units 51 and 52, the plurality of purge gas injection units 53, and the etching gas injection unit 54 may include a central portion (substrate support part) of the gas injection assembly 50. Are radially along the circumferential direction of the same as the central portion thereof).

A plurality of source gas injection units are disposed to supply at least two heterogeneous source gases onto the substrate support 20. In this embodiment, two source gas injection units are provided. That is, a first raw material gas injection unit 51 for supplying the first raw material gas and a second raw material gas injection unit 52 for supplying a second raw material gas different from the first raw material gas are provided. The first raw material gas injection unit 51 supplies a gas containing silicon (Si) such as xylene (SiH ₄ ) or a gas containing metal such as trimethylalumium (TMA) onto the substrate support 20. do. In addition, the second raw material gas injection unit 52 supplies a reaction gas such as, for example, oxygen (O ₂ ) onto the substrate support 20, which reacts with a gas containing silicon or a gas containing metal.

The etching gas injection unit 54 is disposed between the second raw material gas injection unit 52 and the first raw material gas injection unit 51. In the present embodiment, the raw material gas is meant to include both the source gas and the reaction gas except for the purge gas, but the etching gas may be included in the raw material gas, but will be described separately for convenience of description. The etching gas injection unit 54 is particularly necessary when performing a gap-fill process and supplies, for example, an etching gas such as CF ₄ onto the substrate support 20.

The purge gas injection unit 53 purges unreacted raw gas, residual etching gas, and reaction by-products on the substrate support 20 so as not to be mixed on the substrate support 20, for example, argon ( A non-reactive purge gas such as Ar) is supplied onto the substrate support 20. That is, the purge gas injection unit 53 is for preventing the first raw material gas, the second raw material gas, and the etching gas from being mixed with each other on the substrate support unit 20, and the first raw material gas injection unit 51 and the second raw material Two between the gas injection unit 52, two between the second raw gas injection unit 52 and the etching gas injection unit 54 and the etching gas injection unit 54 and the first raw material gas injection unit 51 Three are arranged in between.

Although the raw material gas injection units 51 and 52, the purge gas injection unit 53, and the etching gas injection unit 54 have been described above, the respective injection units are not different in structure. That is, the source gas injection units 51 and 52, the purge gas injection unit 53 and the etching gas injection unit 54 are all the same configuration, but according to the type of gas flowing into the injection unit The name is used differently. For example, in the present embodiment, ten gas injection units having the same configuration are provided. Among them, the gas injection unit to which the first raw material gas is supplied is called the first raw material gas injection unit 51, and the second raw material gas is The gas injection unit to be supplied is referred to as a second raw material gas injection unit 52, and when a purge gas is supplied, it is called a purge gas injection unit 53, and when an etching gas is supplied, it is called an etching gas injection unit 54. One of the important features of the present invention is that a gas injection unit having the same configuration as described above is provided, and that the gas flowing into the gas injection unit can be changed according to various process conditions. That is, in a process requiring only two source gases, the source gas may be introduced into each of the two gas injection units, and the purge gas may be introduced into the remaining gas injection units, and in the process requiring the etching gas, any one of the gas injection units may be used. Etch gas is introduced. In addition, when the saturation time is different depending on the raw material gas, the raw material gas having a long saturation time can be introduced into the two or more gas injection units, and when the raw material gas having a short saturation time is used, The source gas may be introduced only into the gas injection unit. Similarly, when using a source gas that is not easy to purge, a plurality of purge gas injection units may be arranged to extend the purge time. That is, there is an advantage that the gas injection assembly can be operated in various ways according to various process conditions. To this end, the gas injection assembly 50 and the thin film deposition apparatus according to the present invention includes eight to twelve injection units. In other words, when the number of injection units is less than eight, the number of injection units is small to satisfy all the various process conditions, and when the number exceeds 12, the number of injection units is not only higher than necessary but also the manufacturing cost may be increased. It is most preferable to have 8 to 12 injection units.

As described above, the source gas injection units 51 and 52, the purge gas injection unit 53, and the etching gas injection unit 54 all have the same configuration, and thus the specific configuration of the gas injection assembly will be described. The configuration of the unit will be described together.

The gas injection assembly 50 includes a lead plate p1 and a plurality of injection plates p2.

The lead plate p1 is formed in a substantially circular plate shape and detachably coupled to the top of the reactor 10. In addition, a plurality of gas inlets i penetrating between the upper surface and the lower surface are formed in the lead plate p1. The number of the gas inlets (i) is formed more than the number of gas injection units to be described later, the gas inlet (i) is arranged at least one in the region where the gas injection units are installed on the lead plate (p1). These gas inlets i are connected to gas supply means such as a gas tank (not shown), respectively, to supply gas into the gas injection unit.

The plurality of spray plates p2 are disposed radially along the circumferential direction of the substrate support 20 of the lead plate p1. In the present embodiment, ten gas injection units are installed, and ten injection plates p2 are also installed. The injection plate p2 is formed in a substantially fan-shaped plate shape and is spaced apart from the lead plate p1 by a predetermined distance. Moreover, the side wall part s extended upward is formed in the periphery part of the injection plate p2. The side wall portion s is in contact with the lead plate p1 and engaged by screws (not shown), so that the injection plate p2 is coupled to the lead plate p1. When the lead plate p1 and the injection plate p2 are coupled to each other, a gas diffusion space r is formed therebetween. In order to allow the gas introduced into the gas diffusion space r through the gas inlet i of the lead plate p1 to be injected toward the substrate support 20, the injection plate p2 penetrates between the upper and lower surfaces. Gas injection holes o are formed. The plurality of injection holes o are evenly distributed over the entire area of the fan-shaped injection plate p2 to form a so-called shower head shape, so that the gas can be evenly supplied onto the substrate w. In addition, since the gas introduced through the gas inlet (i) is evenly diffused in the gas diffusion space (r), the gas is not discharged only through the gas injection holes (o) disposed on either side of the fan-shaped injection plate (p2). Is discharged through the entire gas injector (o).

On the other hand, in this embodiment, the diffusion plate p3 is interposed between the lead plate p1 and the injection plate p2 so that the gas can be evenly discharged onto the substrate w. The diffusion plate p3 is formed in a fan-like plate like the injection plate p2, and is coupled to the side wall portion s of the injection plate p2 by a screw or the like. When the diffusion plate p3 is installed, the gas diffusion space r is separated into an upper diffusion space r1 and a lower diffusion space r2 along the vertical direction. Similarly to the injection plate p2, the diffusion plate p3 is formed with a plurality of through holes t over the entire area.

The gas introduced through the gas inlet (i) is first diffused in the upper diffusion space (r1), and then injected into the lower diffusion space (r2) through a plurality of through holes (t) formed in the diffusion plate (p3), The gas diffused again in the lower diffusion space r2 is injected onto the substrate support part 120 through the plurality of gas injection holes o of the injection plate p2. The gas injection unit of the gas injection assembly 50 according to the present invention is provided with a shower head type in which a plurality of gas injection holes are formed as described above, and gas is supplied through the upper diffusion space r1 and the lower diffusion space r2. Since it is completely diffused over the entire area of the gas injection unit, it is possible to uniformly supply the gas onto the substrate w.

In this embodiment, the central purge gas injection unit 55 is provided. The purpose of supplying the purge gas is to prevent the different types of source gas or etch gas supplied through the gas injection assembly 50 from being mixed on the substrate w. However, only by disposing the purge gas injection unit 53 between the source gas injection units 51 and 52, there is a risk that the source gases are mixed through the central portion of the substrate support 20. Therefore, a means for preventing the raw material gases from being mixed at the central portion of the substrate support 20 is required. In the central portion of the gas injection assembly 50, a purge gas for purging the raw material gases onto the substrate support 20 is provided. The central purge gas injection unit 55 for supplying is installed. The purge gas supplied from the central purge gas injection unit 155 prevents the source gases from being mixed in the central portion of the substrate support 20. The configuration of the central purge gas injection unit 55 is the same as that of the gas injection units radially disposed along the circumferential direction of the gas injection assembly 50 such as the purge gas injection unit 53. In other words, the above injection units are substantially fan-shaped, whereas the central purge gas injection unit 55 differs only in that it is formed in a circular shape, and is composed of a lead plate p1, an injection plate p2, and a diffusion plate p3. Are exactly the same, so a description thereof will be omitted.

Meanwhile, referring to FIGS. 4 and 5, in the gas injection assembly 50 according to the present invention, gas injection units are grouped to form a gas injection block. That is, two purge gas injection units 53 disposed between the gas injection unit for supplying the same gas, for example, the first raw material gas injection unit 51 and the second raw material gas injection unit 52, may similarly supply the purge gas. As a spray, one purge gas injection block PB is formed without being spaced apart from each other. Similarly, a purge gas injection block PB including three purge gas injection units 53 is formed between the etching gas injection unit 54 and the first raw material gas injection unit 51. In this embodiment, only one injection unit 51 for injecting the first raw material gas is installed, but two or more injection units may be installed according to the embodiment. In this case, the first raw material gas injection units are disposed adjacent to each other without being spaced apart from each other. Therefore, they can be grouped to form one first raw material gas injection block. However, since the gas injection block is formed by grouping the gas injection units injecting the same gas, the units injecting heterogeneous gases such as the first raw material gas injection unit and the second raw material gas injection unit do not form the gas injection block. Do not. The gas injection units for injecting the same type of gas are arranged adjacent to each other to be grouped to allow the gas injection assembly 50 to control an area for injecting a particular gas. Further, in the present embodiment, the distance d2 from the lower surface of the purge gas injection block PB in which the purge gas injection unit 53 is grouped to the upper surface of the substrate support 20 is the source gas injection units 51 and 52. And a distance d1 from a lower surface of the etching gas injection unit 54 to an upper surface of the substrate support 20. That is, the purge gas injection block PB is disposed higher than other gas injection units, thereby facilitating purging of the source gas and the etching gas.

On the other hand, the partition wall (b) is provided between the gas injection unit for injecting different types of gas or between the gas injection blocks and between the gas injection unit and the gas injection blocks for injecting different types of gas. In the present embodiment, the partition b is provided between the purge gas injection block PB and the source gas injection units 51 and 52, between the etching gas injection unit 54 and the purge gas injection block PB. The central purge gas injection unit 55 is also surrounded by the annular partition b to be separated from other gas injection units. In the present embodiment, the partition b is provided to protrude, and the distance from the lower surface of the partition b to the substrate support 20 is greater than the distance from the gas injection block or lower surface of the gas injection unit to the substrate support 20. Becomes small. Accordingly, there is an effect that the gases supplied from the gas injection units or the gas injection blocks disposed with the partition wall therebetween are not mixed with each other.

In the thin film deposition apparatus 100 having the gas injection assembly 50 having the above configuration, the substrate support 20 rotates while the first raw material gas, the second raw material gas, the etching gas, and the purge gas are continuously supplied. The first raw material gas, the purge gas, the second raw material gas, the purge gas, the etching gas, and the purge gas are sequentially supplied to the substrate w seated on the substrate support 20 to deposit a thin film. In this process, various gases are completely diffused through the upper diffusion space (r1) and the lower diffusion space (r2), and then through the shower head type spray plate (p2) is formed with a plurality of gas injection holes (o) The uniformity of the thin film may be improved by uniformly spraying the entire area of the substrate w. In addition, there is an advantage that the device can be used for various process conditions by changing the type of gas supplied to the gas injection unit.

In the above description, an embodiment in which the central purge gas injection unit 55 is installed as a means for preventing the source gases from being mixed at the center portion of the substrate support 20 is not limited thereto. 7 shows an embodiment in which other means are employed.

As shown in FIG. 7, the gas injection assembly 50 is formed with a projection 58 protruding downwardly with respect to the bottom surface of the gas injection assembly 50 by another means. An insertion groove 57 is formed in the center of the substrate support 20 so that the protrusion 58 is accommodated in the substrate support 20 so as to correspond to the protrusion 58. Even if the protrusion 58 is inserted into the insertion groove 59, the outer surface and the substrate support of the protrusion 58 of the gas injection assembly 50 do not affect the gas injection assembly 50 when the substrate support 20 rotates. There should be some space between the insertion grooves 57 of (20). As such, the mixing of the source gases in the central portion of the substrate support 20 by the protrusion 58 of the gas injection assembly 50 is physically blocked. In addition, the same effect can be expected even when the insertion groove is formed in the gas injection assembly 50 and the protrusion is formed in the substrate support 20.

On the other hand, the area in which the gas is injected from the source gas injection unit, the purge gas injection unit and the etching gas injection unit so far, that is, the gas injection zone is shown as the same, but is not necessarily limited to this, the gas injection zone is to be formed differently It may be. In addition, a buffer unit for discharging gas may be provided between the purge gas injection unit and the source gas injection unit. Gas injection assemblies of this type are shown in FIGS. 8 and 9.

8 is a schematic perspective view illustrating a gas injection assembly according to another embodiment of the present invention, and FIG. 9 is a bottom view of the gas injection assembly shown in FIG. 8.

In FIG. 8 and FIG. 9, the components shown by the same reference numerals in the gas injection assembly 50 ′ and the gas injection assembly 50 according to the embodiment described with reference to FIGS. Since the configuration and the effect are exactly the same, the present embodiment will be described only for the difference between the other components and the same components as the previous embodiment.

 If the size of all the injection unit is the same as in the above-described embodiment, various modifications may be difficult in adjusting the area of the gas injection zone. Accordingly, the size of some of the plurality of injection units may be different from each other, or the size of all the injection units may be different from each other. 8 and 9, the size of the gas injection units, that is, the area in which the gas is injected, is formed differently. That is, the size of the purge gas injection unit, the reference number 53 'is formed the largest, the second raw material gas injection unit 52 is formed the second largest, the size of the buffer unit 59 will be described later It is formed small.

In addition, buffer units 59 are disposed at both sides of the purge gas injection unit indicated by reference numeral 53 ', so as to space between the first raw material gas injection unit 51 and the purge gas injection unit 53'. Similarly, the etching gas injection unit 54 and the purge gas injection unit 53 'is spaced apart. The configuration of the buffer unit 59 is the same as that of the purge gas injection unit 53 and the source gas injection units 51 and 52. That is, it is the structure provided with the injection plate and the diffusion plate, respectively, sharing a lead plate. However, unlike the purge gas injection unit or the source gas injection unit, the buffer unit does not emit gas.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation and that those skilled in the art will recognize that various modifications and equivalent arrangements may be made therein. It will be possible. Accordingly, the true scope of protection of the present invention should be determined only by the appended claims.

100 ... thin film deposition apparatus 10 ... reactor
20 ... substrate support 50,50 '... gas injection assembly
51 ... first raw material gas injection unit 52 ... second raw material gas injection unit
53,53 '... purge gas injection unit 54 ... etching gas injection unit
55 ... central purge gas injection unit 59 ... buffer unit
PB ... purge gas injection block o ... gas sprayer
p1 ... lead plate p2 ... injection plate
p3 ... diffusion plate b ... bulkhead
r1 ... upper diffusion space r2 ... lower diffusion space

Claims (5)

A reactor forming a reaction space therein;
A substrate support part rotatably installed in the reactor, the substrate support part having a plurality of substrate seating parts on which a substrate is seated on an upper surface thereof; And
A gas injection assembly installed on an upper portion of the substrate support and supplying gas to a plurality of substrates seated on the annoying substrate support;
The gas injection assembly,
A plurality of source gas injection units disposed along a circumferential direction of the substrate support to supply at least two different source gases onto the substrate support; And
A plurality of purge gas injection units disposed between the source gas injection units for injecting different kinds of gases from the plurality of source gas injection units to inject a purge gas for purging the source gas onto the substrate support; Equipped with
The source gas injection unit and the purge gas injection unit, the gas inlet for introducing the source gas and purge gas is formed on the upper surface, a plurality of gas injection holes are formed on the lower surface of the source gas injection unit and purge gas injection unit, respectively It is,
Two or more injection units which are disposed adjacent to each other among the source gas injection units and the purge gas injection units and inject the same gas to each other form a group to form a plurality of gas injection blocks,
A central purge gas injection unit for supplying a purge gas for purging the source gases to a central portion of the gas injection assembly,
And the plurality of source gas injection units and the purge gas injection units are disposed radially along the circumferential direction of the central purge gas injection unit. The method of claim 1,
A partition is installed between the plurality of gas injection blocks,
And a distance from a lower surface of the partition wall to an upper surface of the substrate support part is smaller than a distance from a lower surface of the gas injection block to an upper surface of the substrate support part. The method according to claim 1 or 2,
The gas injection block may include a purge gas injection block in which the purge gas injection units are formed in a group, and a source gas injection block in which the source gas injection units are formed in a group.
And a distance from a lower surface of the purge gas injection block to an upper surface of the substrate support is greater than a distance from a lower surface of the source gas injection block to an upper surface of the substrate support. The method according to claim 1 or 2,
Thin film deposition apparatus, characterized in that the protrusion is formed in one of each of the central portion of the substrate support and the gas injection assembly, the insertion groove is formed concave to receive the protrusion. The method according to claim 1 or 2,
Thin film deposition apparatus, characterized in that the buffer unit which does not discharge the gas is installed between the source gas injection unit and the purge gas injection unit so that the source gas injection unit and the purge gas injection unit is spaced apart from each other by a predetermined interval.

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