KR102189575B1 - Gas distributing unit for apparatus treating substrate - Google Patents

Abstract

The present invention relates to a gas distribution unit for a substrate processing apparatus, and relates to a gas diffusion unit that improves the uniformity of the thickness of a deposited thin film deposited on a substrate.
Specifically, the present invention includes a gas diffusion unit having a process gas diffusion space therein; A gas supply unit connected to an upper portion of the gas diffusion unit in a communication manner and supplying the process gas into the process gas diffusion space; A first plate provided under the gas diffusion part and having a plurality of injection holes formed to penetrate vertically; And a second plate provided between the gas supply unit and the first plate to divide the process gas diffusion space into an upper diffusion space and a lower diffusion space within the process gas diffusion space, wherein the second plate, A plurality of through-holes penetrating in a thickness direction to communicate the upper diffusion space and the lower diffusion space, a partition wall portion dividing the upper diffusion space into five upper diffusion regions, and the second partition partitioned by the partition wall portion And a central baffle disposed at the center of the plate, and four edge baffles partitioned by the partition wall portion and arranged in a radial arrangement to surround the central baffle, and the gas supply unit includes the It relates to a gas distribution unit for a substrate processing apparatus comprising five gas supply pipes for supplying process gases.

Description

Gas distribution unit for substrate processing equipment {GAS DISTRIBUTING UNIT FOR APPARATUS TREATING SUBSTRATE}

The present invention relates to a gas distribution unit for a substrate processing apparatus, and relates to a gas diffusion unit that improves the uniformity of the thickness of a deposited thin film deposited on a substrate.

In general, in order to manufacture a semiconductor device or a flat panel display, a thin film deposition process in which a thin film of a specific material is deposited on a substrate, a photolithography process in which a selected area of these thin films is exposed or concealed using a photosensitive material, and a thin film in a selected area are formed. An etching process, which is removed and patterned as desired, is performed, and each of these processes is performed inside a substrate processing apparatus designed in an optimal environment for the process.

In particular, one of the important control factors in the deposition process is the uniformity of the deposited thin film so that the deposited thin film deposited on the substrate is uniformly formed over the entire surface area of the substrate. If the thickness of the deposited thin film is not uniform over the entire surface area of the substrate, this is because product properties are deteriorated or the performance of a semiconductor device or a flat panel display device is deteriorated.

1A is a schematic diagram of a substrate processing apparatus according to the prior art, and FIG. 1B is a schematic cross-sectional view of a substrate on which a deposition process is completed using the substrate processing apparatus of FIG. 1A.

As shown in FIG. 1A, the reaction chamber 10 according to the prior art contains a gas supply pipe 1 through which a source gas is supplied from a source material storage unit, and a source gas discharged from the gas supply pipe 1 into a substrate. A gas distribution plate 3 for injecting to the upper portion of the tooth 7 and a diffusion space formed on the outlet 1a of the gas supply pipe 1 and the gas distribution plate 3 to diffuse the source gas ( 5).

The gas distribution plate 3 according to the prior art includes a plurality of injection holes 4 penetrating through one side and the other side of the gas distribution plate.

Referring to FIG. 1A, the distances from the outlet of the gas supply pipe to each injection hole are different from each other, and thus, the source gas discharged from the outlet of the gas supply pipe diffuses within the diffusion space and reaches the inlet of the injection hole. It can be seen that the length of the diffusion path is different depending on the location of each injection hole. As a result, the gas partial pressure at the outlet of the injection hole at the edge of the long diffusion path of the source gas among the injection holes of the gas distribution plate is lower than at the outlet of the injection hole at the center of the gas distribution plate with a shorter diffusion path of the source gas. Therefore, the discharge flow rate of the source gas in the injection hole at the edge of the gas distribution plate is inevitably smaller than the discharge flow rate of the source gas in the injection hole at the central part of the gas distribution plate. As described above, the thickness t2 of the deposited thin film at the center portion of the substrate must be significantly greater than the thickness t1 of the deposited thin film at the edge of the substrate. That is, in the prior art, since the source gas is injected at a different discharge flow rate according to the positions of the injection holes provided in the gas distribution plate, there has been a problem in that the thickness uniformity of the deposited thin film is not guaranteed over the entire surface area of the substrate.

Accordingly, an object of the present invention is to provide a gas distribution unit for a substrate processing apparatus that solves the problems associated with the prior art.

Specifically, an object of the present invention is to provide a gas distribution unit for a substrate processing apparatus capable of improving the thickness uniformity of a deposited thin film over the entire surface area of a substrate.

According to an embodiment of the present invention, the present invention includes a gas diffusion unit having a process gas diffusion space therein; A gas supply unit connected to an upper portion of the gas diffusion unit in a communication manner and supplying the process gas into the process gas diffusion space; A first plate provided under the gas diffusion part and having a plurality of injection holes formed to penetrate vertically; And a second plate provided between the gas supply unit and the first plate to divide the process gas diffusion space into an upper diffusion space and a lower diffusion space within the process gas diffusion space, wherein the second plate, A plurality of through-holes penetrating in a thickness direction to communicate the upper diffusion space and the lower diffusion space, a partition wall portion dividing the upper diffusion space into five upper diffusion regions, and the second partition partitioned by the partition wall portion And a central baffle disposed at the center of the plate, and four edge baffles partitioned by the partition wall portion and arranged in a radial arrangement to surround the central baffle, and the gas supply unit includes the It is possible to provide a gas distribution unit for a substrate processing apparatus, characterized in that it includes five gas supply pipes for supplying process gases.

In addition, preferably, the second plate is characterized in that it is divided by the partition wall portion so that the areas of the plurality of upper diffusion regions are all the same.

In addition, preferably, the five upper diffusion regions are isolated and airtight from each other by the partition wall portion and the inner surface of the gas diffusion portion.

In addition, preferably, the second plate is divided by the partition wall so that the quantity of the through-holes provided inside each of the four edge baffles and the quantity of the through-holes provided inside the central baffle are all the same. It is characterized by being.

In addition, preferably, the partition wall portion includes a closed-circuit-shaped central partition surrounding the central baffle, and four radial partitions extending radially from the central partition toward an edge of the second plate. To do.

In addition, preferably, each of the central barrier ribs and the four radial barrier ribs is characterized in that the area of each of the four edge baffles is equally divided to be equal to the area of the central baffle.

In addition, preferably, the second plate has a rectangular plate shape, the central baffle has a rhombus-shaped cross section, and each of the four edge baffles includes one side of the central baffle having a rhombus shape, and the first 2 It characterized in that it has a pentagonal-shaped cross section including two adjacent surfaces positioned at the edge of the plate and two radial barrier ribs extending in a radial direction from the vertex of the central baffle to the edge of the second plate. .

In addition, preferably, each of the plurality of through holes is characterized in that the supply ports of each of the plurality of gas supply pipes are disposed around a position projected on the second plate.

In addition, preferably, the gas diffusion unit includes an upper cover portion to which the plurality of gas supply pipes are connected in a communication manner, and the first plate is coupled to a lower portion of the upper cover portion, and the second plate It characterized in that it includes; a main body portion including a locking jaw on which the lower edge surface is supported.

In addition, preferably, the upper cover portion has an insertion groove having a shape corresponding to the shape of the partition wall portion so that the partition wall portion is inserted at a predetermined depth from the lower surface of the upper cover portion, and a packing inserted into the insertion groove at a predetermined depth. It characterized in that it comprises a member.

In addition, preferably, the body portion is characterized in that it comprises a packing member having a groove in which a side surface of the partition wall in the radial direction of the partition wall portion is inserted at a predetermined depth from an inner surface of the body portion.

According to the above-described problem solving means, the present invention includes a plurality of gas supply pipes having a partition wall portion for dividing the upper diffusion space into a plurality of upper diffusion regions in the second plate, and supplying process gases to each of the plurality of upper diffusion regions. Accordingly, the length of the horizontal diffusion path of the process gas in the upper diffusion space can be limited to each upper diffusion region rather than the entire upper diffusion space. For this reason, the present invention can significantly reduce the length of the horizontal diffusion path of the process gas in the upper diffusion space, and thereby process gas discharged from the upper diffusion space to the lower diffusion space according to the position difference in the horizontal direction of the second plate. Since the difference in discharge flow rate can be significantly reduced, it is possible to significantly reduce the difference in the discharge flow rate of the process gas discharged from the lower diffusion space to the substrate seating part according to the position difference in the horizontal direction of the first plate. You can improve your sex.

Further, according to the present invention, by dividing the second plate into a central baffle and a plurality of edge baffles, it is possible to further improve the thickness uniformity of the deposited thin film in the central region of the substrate, which determines the quality of the finished substrate.

In addition, the present invention uniformly configures the surface area and/or area of each of the central baffle and the plurality of edge baffles, so that the discharge flow rate of the process gas supplied to the lower diffusion space through the central baffle and the lower diffusion through each of the plurality of edge baffles Since the discharge flow rate of the process gas supplied to the space can be uniform, the thickness uniformity of the deposited thin film can be finally improved.

In addition, the present invention has the same configuration as the number of through-holes provided in the central baffle and the number of through-holes provided in each of the plurality of edge baffles, so that the discharge flow rate and the plurality of edges are Since the discharge flow rate of the process gas supplied to the lower diffusion space through each of the baffles can be uniformized, the thickness uniformity of the deposited thin film can be finally improved.

In addition, the present invention includes an insertion groove and/or a packing member having a shape corresponding to the shape of the partition wall portion, so that between the central baffle and the plurality of upper diffusion regions included in each of the plurality of edge baffles are individually separated. It can be sealed, thereby preventing the process gas supplied to each of the central baffle and the plurality of edge baffles from leaking to the upper diffusion area of other neighboring baffles and allowing the process gas to flow only through the through-hole under the baffle. I can. As a result, according to the present invention, the discharge flow rate of process gases discharged from each of the upper diffusion regions included in the second plate to the lower diffusion space can be more uniform.

1A is a schematic diagram of a substrate processing apparatus according to the prior art,
1B is a schematic cross-sectional view of a substrate on which a deposition process is completed using the substrate processing apparatus of FIG. 1A,
2 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention,
3 is a schematic perspective view of a gas distribution unit according to an embodiment of the present invention,
4 is a schematic exploded perspective view of a gas distribution unit according to an embodiment of the present invention,
5 is a schematic longitudinal sectional view of a gas distribution unit according to an embodiment of the present invention taken along line AA of FIG. 3,
6 is a schematic perspective view of a second plate according to an embodiment of the present invention,
7 is a schematic plan view of a second plate according to an embodiment of the present invention,
8 is a schematic perspective view of a gas supply unit according to an embodiment of the present invention,
9 is a schematic bottom view of the upper cover of FIG. 8,
10 is a schematic plan view of a positional relationship between a second plate and a first supply port and a second supply port according to an embodiment of the present invention,
11 is a schematic bottom view of the main supply pipe of FIG. 8,
12 is a schematic perspective view of the second gas supply pipe of FIG. 8,

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings so that those of ordinary skill in the art can easily implement them. It should be noted that the reference numbers indicated in the configurations in the accompanying drawings use the same reference numbers as much as possible when indicating the same configuration in other drawings. In addition, in describing the present invention, when it is determined that a detailed description of a related known function or a known configuration may unnecessarily obscure the subject matter of the present invention, a detailed description thereof will be omitted. In addition, certain features presented in the drawings are enlarged or reduced or simplified for ease of description, and the drawings and their components are not necessarily drawn to scale. However, those skilled in the art will readily understand these details.

2 is a schematic diagram of a substrate processing apparatus 1000 according to an embodiment of the present invention.

As shown in FIG. 2, the substrate processing apparatus 1000 according to an embodiment of the present invention includes a process chamber 100, a substrate seating unit 200, a heating unit 300, and a gas distribution unit ( 500) and an exhaust means 400.

The process chamber 100 limits a space in which the deposition process of the substrate S is performed. Specifically, the process chamber 100 includes a lower body 110 and a chamber lid 120 that selectively opens and closes an upper portion of the lower body 110.

A gate valve 130 is provided on one side of the lower body 110 to allow the substrate to flow in and out of the process chamber 100.

In addition, an exhaust means 400 is provided on the other side or lower portion of the lower body 110. The exhaust means 400 is configured to discharge residual process gases and deposition residues (eg, particles, etc.) remaining in the process chamber 100 to the outside of the process chamber 100 after the deposition process is completed. Specifically, the exhaust means 400 includes an exhaust pipe 410 communicating with the process chamber 100 and a vacuum pump 420 applying a vacuum suction input to the exhaust pipe 410.

The gas distribution unit 500 is configured to supply and distribute a process gas from the inside of the process chamber 100 to an upper portion of the substrate seating part 200. To this end, the gas distribution unit 500 includes a gas diffusion unit 600, a gas supply unit 700, a first plate 800, and a second plate 900.

The gas diffusion unit 600 is disposed under the chamber lid 120 of the process chamber 100 inside the process chamber 100, and the gas diffusion unit 600 is formed from the gas supply unit 700. It is configured to spray and supply the process gas supplied to the inside into the process chamber 100 (ie, to the upper portion of the substrate seating part 200).

The gas supply unit 700 is configured to supply a process gas from the process gas storage unit to the gas diffusion unit 600. The gas supply unit 700 is partially configured to pass through the chamber lid 120 of the process chamber 100, and is provided entirely above the chamber lid 120 of the process chamber 100.

The first plate 800 is configured to supply the process gas supplied to the inside of the gas diffusion part 600 into the process chamber 100 in an injection manner.

The gas distribution unit 500 and the components included in the gas distribution unit 500 will be described in more detail below with reference to the drawings.

The substrate mounting part 200 is provided under the gas supply part 700 in the process chamber 100 and mounts the substrate S thereon. The substrate seating part 200 is provided to be rotatable when the deposition process is executed inside the process chamber 100.

Preferably, the substrate seating part 200 may include a plurality of vacuum holes in order to stably seat and fix the substrate S thereon.

The heating part 300 is provided under the substrate seating part 200 and is configured to control a temperature inside the process chamber 100. The heating unit 300 may be configured in a manner that directly heats the substrate mounting part 200, or may be configured in a manner in which the substrate mounting part 200 is indirectly heated.

In FIG. 2, an example in which the heating unit 300 is configured in a manner of indirectly heating the substrate seating unit 200 is illustrated. As shown in FIG. 2, the heating unit 300 includes an induction heating coil part 310 provided under the substrate mounting part 200, the substrate mounting part 200, and the induction heating coil part ( 310) and includes a radiant heat conversion unit 320 for converting the heat generated from the induction heating coil unit 310 into radiant heat. The heat generated from the induction heating coil unit 310 is transferred to the radiant heat conversion unit 320, and then converted into radiant heat at the radiant heat conversion unit 320, and the substrate positioned above the radiant heat conversion unit 320 is mounted. The radiant heat is supplied to the unit 200.

For example, the radiant heat conversion unit 320 may be formed of graphite.

Hereinafter, the gas distribution unit 500 according to the present invention will be described in more detail with reference to the drawings.

3 is a schematic perspective view of a gas distribution unit 500 according to an embodiment of the present invention, FIG. 4 is a schematic exploded perspective view of a gas distribution unit 500 according to an embodiment of the present invention, and FIG. A schematic longitudinal sectional view of the gas distribution unit 500 according to an embodiment of the present invention taken along line AA of FIG. 3.

3 to 5, the gas distribution unit 500 according to an embodiment of the present invention includes a gas diffusion unit 600, a gas supply unit 700, a first plate 800, and It includes a second plate 900.

First, the gas diffusion unit 600 is configured such that the process gas supplied through the gas supply unit 700 can be diffused within the gas diffusion unit 600. To this end, the gas diffusion unit 600 includes a process gas diffusion space therein.

Specifically, the gas diffusion unit 600 includes a body portion 620 and an upper cover portion 610 covering an upper portion of the body portion 620. Here, for example, when a substrate to be deposited in the substrate processing apparatus 1000 according to an embodiment of the present invention has a rectangular panel shape, the gas diffusion unit 600 is shown in FIGS. 3 and 4. As described above, it has a square column shape that forms a square panel shape as a whole to correspond to the shape of the substrate.

The upper cover portion 610 is connected to a plurality of gas supply pipes (eg, five gas supply pipes as shown in the figure) included in the gas supply unit 700 in a communication manner, as described later. And, referring to Figure 10, the upper cover 610 is a plurality of supply ports (for example, the drawing) through which the plurality of gas supply pipes (for example, five gas supply pipes as shown in the drawing) communicate. It includes 5 supply ports) as shown in.

In addition, the upper cover part 610 is provided under the chamber lid 120 in the process chamber 100.

The upper cover part 610 will be described in more detail than when the gas supply part 700 is specifically described below with reference to the drawings.

The main body 620 has a hollow square column shape as a whole to form a process gas diffusion space.

Specifically, the body portion 620 is provided under the upper cover portion 610 and the first plate 800 is coupled to the lower portion of the body portion 620. That is, the upper part of the body part 620 is covered by the upper cover part 610, the lower part of the body part 620 is covered by the first plate 800, and the process gas diffusion space is It is defined by a lower surface of the upper cover part 610, an upper surface of the first plate 800, and an inner wall of the body part 620.

In addition, the main body 620 includes a locking protrusion 621 extending in an inward direction from an inner wall of the main body 620, and the locking protrusion 621 is a lower edge of the second plate 900 The surface may be supported inside the body part 620.

Preferably, although not shown in the drawing, the main body 620 is a packing having a groove in which the side of the radial partition 913 of the partition wall portion to be described later is inserted at a predetermined depth from the inner surface of the main body 620 It may include a member. The packing member may be elongated in an upward direction from a height at which the locking protrusion 621 is formed among inner walls of the main body 620.

In this way, the side surface of the radial partition 913 of the partition wall portion of the second plate 900 to be described later is inserted into the groove of the packing member, so that the central baffle 905 and a plurality of edge baffles 907 (for example, As shown in the figure, it is possible to individually seal between a plurality of upper diffusion regions 631 (e.g., five upper diffusion regions as shown in the figure) included in each of the four edge baffles. Therefore, the process gas supplied to each of the central baffle 905 and a plurality of edge baffles 907 (for example, four edge baffles as shown in the figure) leaks into the upper diffusion region 631 of another neighboring baffle. At the same time, it is possible to prevent the process gas from flowing only through the through hole 901 under the baffle. As a result, according to the present invention, the discharge flow rate of the process gases discharged from each of the upper diffusion regions 631 included in the second plate 900 to the lower diffusion space 640 may be more uniform.

The gas supply unit 700 is connected to the upper portion of the gas diffusion unit 600 (ie, the upper cover unit 610) in a communication manner, and is configured to supply the process gas into the process gas diffusion space. . That is, the gas supply unit 700 is configured to connect the process gas storage unit and the upper cover 610 of the gas diffusion unit 600 in a communication manner.

The gas supply unit 700 includes a main supply pipe 710 and a plurality of gas supply pipes branching from the lower portion of the main supply pipe 710 (for example, five gas supply pipes as shown in the drawing), as described later. Include. The main supply pipe 710 is connected to the process gas storage unit upstream, and the plurality of gas supply pipes (for example, five gas supply pipes as shown in the drawing) are formed inside the gas diffusion unit 600 It is connected to each of a plurality of upper diffusion regions to be described later (eg, five upper diffusion regions as shown in the drawing).

The gas supply unit 700 will be described in more detail below with reference to related drawings.

The first plate 800 is provided at a lower portion of the gas diffusion unit 600 (ie, a lower portion of the body unit 620), and vertically (ie, in the thickness direction of the first plate 800). ) It has a plurality of injection holes 801 formed through. The injection hole 801 is uniformly distributed over the entire surface area of the gas diffusion unit 600 and is arranged. Although not specifically shown in the drawing, the injection hole 801 is an inlet formed at the top and a process gas And an orifice part connecting the inlet and the injection part to the injection part through which the injection part is injected.

6 is a schematic perspective view of a second plate 900 according to an embodiment of the present invention, and FIG. 7 is a schematic plan view of the second plate 900 according to an embodiment of the present invention.

As shown in FIGS. 4 to 7, the second plate 900 according to an embodiment of the present invention includes a process gas supplied into the process gas diffusion space through the gas supply unit 700 (ie, a gas supply pipe). The process gas is uniformly diffused in the horizontal direction and then sprayed through the plurality of injection holes 801 of the first plate 800 through the through hole 901 of the second plate 900 to be described later. It is configured to be.

To this end, the second plate 900 divides the process gas diffusion space into an upper diffusion space 630 and a lower diffusion space 640 within the process gas diffusion space. It is provided between the 1 plate 800.

That is, the second plate 900 is disposed to cross the process gas diffusion space in a horizontal direction between the gas supply unit 700 and the first plate 800, and the locking projection of the main body 620 ( 621).

In addition, the second plate 900 includes a plurality of through-holes 901 penetrating in the thickness direction to communicate the upper diffusion space 630 and the lower diffusion space 640, and the upper diffusion space 630. ) Is divided into a plurality of upper diffusion regions 631 (for example, five upper diffusion regions as shown in the drawing).

The plurality of through holes 901 are positioned to be uniformly distributed throughout the surface of the second plate 900. In addition, the plurality of through holes 901 have a relatively large diameter compared to the plurality of injection holes 801 of the first plate 800.

As will be described later, each of the plurality of through-holes 901, as shown in FIG. 11, is a supply port of each of the plurality of gas supply pipes (for example, five gas supply pipes as shown in the drawing). It is preferably disposed around the position projected onto the plate 900. That is, none of the through-holes 901 among the plurality of through-holes 901 are arranged in a straight line up and down with the supply ports of the upper cover part 610. Accordingly, the process gas supplied from the plurality of gas supply pipes (eg, five gas supply pipes as shown in the figure) to the upper diffusion region 631 through the supply part of the upper cover 610 is diffused above each Since the process gas can flow into the lower upper diffusion area after colliding with the surface of the second plate 900 located in the areas 631, the second plate 900 It is possible to prevent the gas partial pressure and/or discharge flow from being concentrated in the central region of the lower upper diffusion region by passing through the through hole 901 directly without hitting the surface of the through hole 901 and being supplied to the lower upper diffusion region. ), it is possible to secure an equal injection flow rate and/or a discharge flow rate in the plurality of injection holes 801.

The partition wall part extends from an upper surface of the second plate 900 to a lower surface of the upper cover part 610 or to abut a lower surface of the upper cover part 610. That is, the partition wall portion divides the upper diffusion space 630 defined by the second plate 900 into a plurality of upper diffusion regions 631 that are completely isolated in a fluid manner while simultaneously dividing the upper surface of the second plate 900. It is configured to be divided into a plurality of baffles (eg, five baffles as shown in the figure).

The second plate 900 includes a central baffle 905 and a plurality of edge baffles 907 (eg, four edge baffles as shown in the figure) disposed to surround the central baffle. .

In addition, the partition wall portion, the central partition wall 911 having a closed-circuit shape surrounding the central baffle 905 (that is, defining the central baffle 905) and the second plate 900 from the central partition wall 911 ) And a plurality of radial barrier ribs 913 (for example, four radial barrier ribs as shown in the figure) extending in the radial direction toward the edge 903 of the).

The central baffle 905 and the central partition wall 911 may have a closed circuit shape, and may have, for example, a circular shape, an oval shape, or a rhombus shape.

Each of the central barrier ribs 911 and the plurality of radial barrier ribs 913 (for example, four radial barrier ribs as shown in the drawing) has an area of each of the plurality of edge baffles 907 defined as the central baffle. It is divided equally so that it is equal to the area of (905).

In addition, the plurality of edge baffles 907 (for example, four edge baffles as shown in the drawing) are divided to have the same shape and width, and/or the same number of through holes 901 with each other. .

In addition, preferably, each of the central barrier ribs 911 and the plurality of radial barrier ribs 913 includes the number of the through holes 901 provided inside each of the plurality of edge baffles 907 and the central The second plate 900 and the upper diffusion space 630 may be divided so that the number of the through holes 901 provided inside the baffle 905 is the same.

For example, as shown in FIGS. 6 and 7, the second plate 900 has a rectangular plate shape, and the central baffle 905 and the central partition wall 911 have a rhombic cross-section. do. In addition, each of the plurality of edge baffles 907 includes one side of the central baffle 905 having a rhombus shape, two adjacent sides positioned at the rim 903 of the second plate 900, and the central baffle. It has a pentagonal cross section including two radial barrier ribs 913 extending radially from the vertex of 905 to the edge 903 of the second plate 900.

That is, the radial barrier ribs 913 extend from the vertex of the central barrier rib to the rim 903 of the second plate 900, and a total of four are provided. Accordingly, the pentagonal edge baffle 907 has one side of the parent-shaped central baffle 905 and two adjacent sides positioned at the edge 903 of the second plate 900 (that is, at right angles to each other). The upper diffusion region 631 and the baffle are defined by two formed surfaces) and two radial barrier ribs 913 extending from two of the vertices of the central baffle 905.

At this time, the number of through holes 901 formed in the central baffle 905 having a rhombus shape, the area of the central baffle 905, and the number of through holes 901 formed in each of the pentagonal edge baffles 907 And the widths of each of the edge baffles 907 are the same. This allows the process gas to diffuse through a horizontal diffusion path of a uniform length or width as much as possible in the plurality of upper diffusion regions 631 defined by the central partition wall 911 and the four radial partition walls 913, This is to diffuse the entire plurality of through-holes 901 of the second plate 900 into the lower diffusion space 640 with an overall uniform discharge flow rate and/or gas partial pressure.

Hereinafter, the gas supply unit 700 and the upper cover portion 610 of the gas diffusion unit 600 according to an embodiment of the present invention will be described in more detail with reference to the drawings.

8 is a schematic perspective view of a gas supply unit 700 according to an embodiment of the present invention, FIG. 9 is a schematic bottom view of the upper cover part 610 of FIG. 8, and FIG. 10 is an embodiment of the present invention A schematic plan view of the positional relationship between the second plate 900 and the first supply port 611 and the second supply port 613 according to an example, and FIG. 11 is a schematic plan view of the main supply pipe 710 of FIG. It is a bottom view, and FIG. 12 is a schematic perspective view of the second gas supply pipe 730 of FIG. 8.

As shown in Figure 8, the gas diffusion unit 600 according to an embodiment of the present invention includes an upper cover portion 610 and a body portion 620, as described above, the upper cover portion 610 Is connected to the gas supply unit 700 while sealing the upper portion of the main body 620 so that the process gas can be guided into the process gas diffusion space.

As shown in FIG. 9, the upper cover part 610 includes a plurality of supply ports (for example, five supply ports as shown in the figure) passing through the upper cover part 610 in the thickness direction. And each of the plurality of supply ports is connected to communicate with a plurality of gas supply pipes (for example, five gas supply pipes as shown in the drawing) included in a gas supply unit 700 to be described later, and the upper diffusion space ( 630) Process gas is discharged into the interior. The plurality of supply ports are formed in the upper cover part 610, but may serve to form part of a plurality of gas supply pipes included in the gas supply part 700 from the viewpoint of the gas supply part 700 as described later. have.

9 and 10, the plurality of supply ports (for example, five supply ports as shown in the drawing) are a plurality of upper diffusion regions 631 (for example, as shown in the drawing). 5 upper diffusion regions) are positioned to correspond one by one. The plurality of supply ports are positioned to correspond to each of the central baffle 905 and the plurality of edge baffles 907.

Specifically, the plurality of supply ports include a first supply port 611 formed at a position vertically above the central part of the central baffle 905 in the upper cover part 610, and the upper cover part 610 And a plurality of second supply ports 613 formed above each of the plurality of edge baffles 907.

Referring to FIG. 10, when the positional relationship between each of the plurality of supply ports and the plurality of through holes 901 of the second plate 900 will be described in detail, the plurality of through holes of the second plate 900 ( Each of the plurality of supply ports 901 is preferably disposed around a position projected on the second plate 900.

That is, none of the through-holes 901 among the plurality of through-holes 901 are arranged in a straight line up and down with the supply ports of the upper cover part 610. Accordingly, the process gas supplied from the plurality of gas supply pipes to the upper diffusion region 631 through the supply unit of the upper cover part 610 is the surface of the second plate 900 located in each of the upper diffusion regions 631. The process gas can pass through the through hole 901 without hitting the surface of the second plate 900 from the supply port and pass through the upper upper part of the lower part. By being supplied to the diffusion region, it is possible to prevent the gas partial pressure and/or the discharge flow from being concentrated in the central region of the lower upper diffusion region, so that the uniform injection flow rate in the plurality of injection holes 801 in the first plate 800 and /Or the discharge flow rate can be secured.

In addition, referring to FIGS. 9 and 10, each of the plurality of second supply ports 613 is preferably positioned vertically above the geometric center of each of the plurality of edge baffles 907. That is, the edge baffle 907 excluding the partition wall portion is a plate-shaped member, and the geometric center is the geometric center and/or the center of gravity of the edge baffle 907.

In this way, the first supply port 611 is located vertically above the central portion of the central baffle 905, and each of the plurality of second supply ports 613 is vertically upper of the geometric center of the plurality of edge baffles 907 When the process gas is supplied to each of the central baffle 905 and the plurality of edge baffles 907 through each supply port, the process gas collides in each baffle and spreads without a large flow path deviation in the horizontal direction. Therefore, the process gas is transferred from the upper diffusion space 630 (that is, the upper diffusion region 631 of the upper diffusion space 630) through the plurality of through holes 901 provided in each baffle to the lower diffusion space 640 It can be supplied with the discharge flow rate deviation to the minimized. On the contrary, when the second supply port 613 is provided in the upper cover part 610 from the vertical upper side of the edge baffle 907, the process gases passing through the through hole 901 biased to one side are biased to the other side. Compared to the process gases passing through the through-hole 901, the diffusion path and/or the flow path are longer, so that the deviation of the discharge flow rate to the lower diffusion space 640 through the through-hole 901 is inevitable at one side and the other side. Because.

And, referring to FIG. 9, the upper cover portion 610 is an insertion groove 615 having a shape corresponding to the shape of the partition wall portion so that the partition wall portion is inserted at a predetermined depth from the lower surface of the upper cover portion 610. ), and a packing member inserted into the insertion groove 615 to a predetermined depth.

By including the insertion groove 615 and/or the packing member having a shape corresponding to the shape of the partition wall portion in the upper cover portion 610, a plurality of the central baffle 905 and the plurality of edge baffles 907, respectively It is possible to individually seal between the two upper diffusion regions 631, whereby the process gas supplied to each of the central baffle 905 and the plurality of edge baffles 907 is transferred to the upper diffusion region 631 of another adjacent baffle. While preventing leakage, the process gas can flow only through the through hole 901 under the baffle. As a result, according to the present invention, the discharge flow rate of the process gases discharged from each of the upper diffusion regions 631 included in the second plate 900 to the lower diffusion space 640 may be more uniform.

As shown in FIG. 8, the gas supply unit 700 according to an embodiment of the present invention is connected to the upper cover portion 610 of the gas diffusion unit 600 in a communication manner. That is, as will be described later, the plurality of gas supply pipes included in the gas supply unit 700 penetrates the upper cover 610 in the thickness direction, and the process gas into the process gas diffusion space of the gas diffusion unit 600 at the end of the free end. It is provided with a plurality of supply ports are discharged. From the viewpoint of the upper cover part 610, the plurality of supply ports may be formed in the upper cover part 610.

The gas supply unit 700 includes a main supply pipe 710 and a plurality of gas supply pipes branching from a lower portion of the main supply pipe 710 (eg, five gas supply pipes as shown in the drawing). The main supply pipe 710 is connected to the process gas storage unit upstream, and the plurality of gas supply pipes (for example, five gas supply pipes as shown in the drawing) are connected to the main supply pipe 710 from the upstream. , Connected to each of the plurality of supply ports in the downstream. That is, the plurality of gas supply pipes (for example, five gas supply pipes as shown in the drawing) connect each of the main supply pipe 710 and the plurality of upper diffusion regions formed inside the gas diffusion unit 600. .

As shown in FIGS. 8 and 11, the main supply pipe 710 is disposed at a predetermined height above the center of the upper cover 610 of the gas diffusion unit 600.

In addition, the main supply pipe 710 includes a plurality of communication ports connected to a plurality of gas supply pipes (eg, five gas supply pipes as shown in the drawing) on a lower or lower surface.

Specifically, as shown in Fig. 11, the plurality of communication ports (for example, five communication ports as shown in the drawing) is a first communication port 711 formed in the center at the lower portion of the main supply pipe And, a plurality of second communication ports 713 formed or arranged to surround the first communication port 711 at a lower portion of the main supply pipe. Here, the arrangement direction of the plurality of second communication ports 713 corresponds to the arrangement direction of the plurality of second supply ports 613.

As shown in FIG. 8, the plurality of gas supply pipes are composed of branch pipes branched from the lower or lower surface of the main supply pipe 710, and the plurality of gas supply pipes are each of the plurality of communication ports and the plurality of Each of the two supply ports is connected in a communication manner.

Specifically, the plurality of gas supply pipes include a first gas supply pipe 720 disposed at the center of the plurality of gas supply pipes, and a plurality of second gas supply pipes disposed in a radial arrangement around the first gas supply pipe 720. It includes a gas supply pipe 730.

The first gas supply pipe 720 includes a first communication port 711 formed at the center of the lower portion of the main supply pipe and a first supply formed through the center of the upper cover 610 of the gas diffusion part 600 It is configured to connect the sphere 611.

Each of the plurality of second gas supply pipes 730 includes each of a plurality of second communication ports 713 formed to surround the first communication port 711 at a lower portion of the main supply pipe, and the upper cover part 610 ) Is arranged to surround the first supply port 611 and is configured to connect each of the plurality of second supply ports 613 formed therethrough.

The plurality of second gas supply pipes 730 have the same shape and the same pipe length. In addition, the first gas supply pipe 720 has the same length as the second gas supply pipe 730. That is, the plurality of gas supply pipes are configured to have the same length from the lower portion of the main supply pipe 710 to the upper portion of the gas diffusion part 600.

In this way, by configuring all the lengths of the plurality of gas supply pipes to be the same, the length of the flow path of the process gas from the main supply pipe 710 to the upper diffusion space 630 can be the same throughout the plurality of gas supply pipes. When the process gas is supplied from the supply pipe 710 to the plurality of gas supply pipes, not only the process gas can reach the entire plurality of upper diffusion regions 631 at the same time through the plurality of supply ports, but also the flow path of the process gas. Due to the uniformity of the length, the discharge flow and/or gas partial pressure of the process gas discharged from each of the plurality of supply ports to each of the plurality of upper diffusion regions 631 may be uniform. As a result, the process gas of a uniform discharge flow rate and/or gas partial pressure can be finally sprayed to the substrate seat 200 throughout the gas distribution unit 500, thereby further improving the thin film thickness uniformity of the deposited thin film. I can.

Here, when considering the arrangement relationship between the first gas supply pipe 720 and the second gas supply pipe 730, the first gas supply pipe 720 has the same length as the second gas supply pipe 730 For this purpose, it is preferable that the first gas supply pipe 720 has a different shape from the second gas supply pipe 730.

Hereinafter, the shape of the second gas supply pipe 730 will be described in more detail with reference to the drawings. However, the shapes described below are only examples of an optimal shape that does not impede the flow characteristics of the process gas by the applicant among the various shapes of the second gas supply pipe 730, and the present invention is not limited thereto.

As shown in FIG. 12, the second gas supply pipe 730 is a vertical upper portion of the second supply port 613 of the upper cover 610 from the second communication port 713 of the main supply pipe 710 It includes an inclined pipe portion 731 inclined downward to or to the second supply port 613.

That is, the second gas supply pipe 730 includes a vertical pipe portion 733 extending in a vertical upper direction of the second supply port 613, and an upper portion of the vertical pipe portion 733 and the Consisting of an inclined pipe part 731 connecting the second communication port 713 in an obliquely straight line, or the second gas supply pipe 730 is the second communication port 713 of the upper cover part 610. 2 It may be composed of only the inclined pipe portion 731 connecting the supply port 613 in a straight line.

Since the second gas supply pipe 730 has an inclined pipe part 731, the second communication port 713 and the second supply port (because of the difference in the diameter of the main supply pipe 710 and the surface area of the upper cover part 610) 613) It is possible to compensate for the horizontal separation distance, and at the same time, the process gas supplied in the vertical downward direction from the main supply pipe 710 changes the flow direction at the connection part between the second gas supply pipe 730 and the main supply pipe 710 It is possible to minimize the amount of energy loss due to flow.

As described above, the present invention includes a plurality of gas supply pipes provided with a partition wall portion dividing the upper diffusion space into a plurality of upper diffusion regions in the second plate, and supplying process gases to each of the plurality of upper diffusion regions. The length of the horizontal diffusion path of the process gas in the diffusion space may be limited to each upper diffusion region rather than the entire upper diffusion space. For this reason, the present invention can significantly reduce the length of the horizontal diffusion path of the process gas in the upper diffusion space, and thereby process gas discharged from the upper diffusion space to the lower diffusion space according to the position difference in the horizontal direction of the second plate. Since the difference in discharge flow rate can be significantly reduced, it is possible to significantly reduce the difference in the discharge flow rate of the process gas discharged from the lower diffusion space to the substrate seating part according to the position difference in the horizontal direction of the first plate. You can improve your sex.

Further, according to the present invention, by dividing the second plate into a central baffle and a plurality of edge baffles, it is possible to further improve the thickness uniformity of the deposited thin film in the central region of the substrate, which determines the quality of the finished substrate.

In addition, the present invention uniformly configures the surface area and/or area of each of the central baffle and the plurality of edge baffles, so that the discharge flow rate of the process gas supplied to the lower diffusion space through the central baffle and the lower diffusion through each of the plurality of edge baffles Since the discharge flow rate of the process gas supplied to the space can be uniform, the thickness uniformity of the deposited thin film can be finally improved for one substrate.

In addition, in the present invention, by configuring the number of through holes provided in the central baffle and the number of through holes provided in each of the plurality of edge baffles equally, the discharge flow rate of the process gas supplied to the lower diffusion space through the central baffle and the plurality of edges Since the discharge flow rate of the process gas supplied to the lower diffusion space through each of the baffles can be equalized, the thickness uniformity of the deposited thin film can be finally improved for one substrate.

In addition, the present invention includes an insertion groove and/or a packing member having a shape corresponding to the shape of the partition wall portion, so that between the central baffle and the plurality of upper diffusion regions included in each of the plurality of edge baffles are individually separated. It can be sealed, thereby preventing the process gas supplied to each of the central baffle and the plurality of edge baffles from leaking to the upper diffusion area of other neighboring baffles and allowing the process gas to flow only through the through-hole under the baffle. I can. As a result, according to the present invention, the discharge flow rate of process gases discharged from each of the upper diffusion regions included in the second plate to the lower diffusion space can be more uniform.

In addition, in the present invention, the first supply port is positioned vertically above the central portion of the central baffle, and each of the plurality of second feed ports is positioned vertically above the geometric center of the plurality of edge baffles. When the process gas is supplied to each of the central baffle and the plurality of edge baffles through the sphere, the process gas may collide with each baffle and spread without a large flow path deviation in the horizontal direction.Therefore, a plurality of through holes provided in each baffle Through this, the process gas can be supplied by minimizing the discharge flow rate deviation from the upper diffusion space (ie, the upper diffusion region of the upper diffusion space) to the lower diffusion space.

In addition, according to the present invention, the length of the flow path of the process gas from the main supply pipe to the upper diffusion space can be the same throughout the plurality of gas supply pipes by configuring all the lengths of the plurality of gas supply pipes the same. When supplying process gas through a plurality of gas supply pipes, not only can the process gas reach all of the plurality of upper diffusion areas at the same time through the plurality of supply ports, but also supply more than one due to the uniformity of the length of the flow path of the process gas. The discharge flow and/or gas partial pressure of the process gas discharged from each sphere to each of the plurality of upper diffusion regions may be uniform. As a result, the process gas of a uniform discharge flow rate and/or gas partial pressure can be finally injected to the substrate seating portion in the entire gas distribution unit, thereby further improving the thin film thickness uniformity of the deposited thin film.

Although shown and described in specific embodiments to illustrate the technical idea of the present invention, the present invention is not limited to the same configuration and operation as the specific embodiment as described above, and various modifications are within the scope of the present invention. Can be carried out in Therefore, such modifications should be regarded as belonging to the scope of the present invention, and the scope of the present invention should be determined by the claims to be described later.

1000: substrate processing device
100: process chamber
200: substrate mounting portion
300: heating part
400: exhaust means
500: gas distribution unit
600: gas diffusion
700: gas supply unit
800: first plate
900: second plate
901: through hole
903: border
905: central baffle
907: edge baffle
910: bulkhead
911: central bulkhead
913: radial bulkhead

Claims (17)

A gas diffusion unit having a process gas diffusion space therein;
A gas supply unit connected to an upper portion of the gas diffusion unit in a communication manner and supplying the process gas into the process gas diffusion space;
A first plate provided under the gas diffusion part and having a plurality of injection holes formed to penetrate vertically;
And a second plate provided between the gas supply unit and the first plate to divide the process gas diffusion space into an upper diffusion space and a lower diffusion space within the process gas diffusion space, and
The second plate includes a plurality of through-holes penetrating in a thickness direction to communicate the upper diffusion space and the lower diffusion space, a partition wall portion dividing the upper diffusion space into five upper diffusion regions, and a partition wall portion A central baffle partitioned by the second plate and disposed at the center of the second plate, and four edge baffles partitioned by the partition wall portion and arranged in a radial arrangement to surround the central baffle,
The gas supply unit includes five gas supply pipes supplying the process gas to each of the five upper diffusion regions,
The gas distribution unit for a substrate processing apparatus, wherein the partition wall portion is divided equally so that the width of each of the four edge baffles is equal to that of the central baffle. The method of claim 1,
And the second plate is divided by the partitions so that the areas of the plurality of upper diffusion regions are all equal to each other. The method of claim 1,
And the five upper diffusion regions are separated and airtight from each other by the partition wall portion and the inner surface of the gas diffusion portion. The method of claim 1,
The second plate is a substrate, characterized in that the partition wall portion is partitioned so that the quantity of the through holes provided inside each of the four edge baffles and the quantity of the through holes provided inside the central baffle are the same Gas distribution unit for processing equipment. The method of claim 1,
The partition wall portion comprises a closed-circuit-shaped central partition surrounding the central baffle, and four radial partitions extending in a radial direction from the central partition toward an edge of the second plate. Gas distribution unit. delete The method of claim 1,
The second plate has a square plate shape,
The central baffle has a rhombus-shaped cross section,
Each of the four edge baffles extends in a radial direction from one side of the center baffle in a rhombus shape, two adjacent sides positioned at the edge of the second plate, and from the vertex of the center baffle to the edge of the second plate. Gas distribution unit for a substrate processing apparatus, characterized in that it has a pentagonal cross-section including two radial barrier ribs. The method of claim 1,
Each of the plurality of through-holes is disposed around a position in which the supply ports of each of the plurality of gas supply pipes are projected onto the second plate. The method of claim 1,
The gas diffusion unit,
An upper cover portion to which the plurality of gas supply pipes are connected in a communication manner,
Gas distribution for a substrate processing apparatus, comprising: a main body provided under the upper cover portion, the first plate coupled to the lower portion, and including a locking protrusion for supporting the lower edge of the second plate. unit. The method of claim 9,
The upper cover portion includes an insertion groove having a shape corresponding to the shape of the partition wall portion so that the partition wall portion is inserted at a predetermined depth on the lower surface of the upper cover portion, and a packing member inserted into the insertion groove at a predetermined depth. A gas distribution unit for a substrate processing apparatus comprising: The method of claim 9,
And the body portion includes a packing member having a groove in which a side of the partition wall in the radial direction of the partition wall portion is inserted at a predetermined depth on an inner surface of the body portion. A gas diffusion unit having a process gas diffusion space therein;
A gas supply unit for supplying a process gas into the process gas diffusion space;
A first plate provided under the gas diffusion part and having a plurality of injection holes formed to penetrate vertically;
And a second plate provided between the gas supply unit and the first plate to divide the process gas diffusion space into an upper diffusion space and a lower diffusion space within the process gas diffusion space, and
The second plate includes a plurality of through holes penetrating in a thickness direction to communicate the upper diffusion space and the lower diffusion space, and a partition wall portion dividing the upper diffusion space into five upper diffusion regions,
The gas distribution unit for a substrate processing apparatus, wherein the partition wall portion is divided equally so that the areas of the five upper diffusion regions are the same. The method of claim 12,
The second plate further includes a central baffle partitioned by the partition wall portion and disposed at the center of the second plate, and a plurality of edge baffles partitioned by the partition wall portion and arranged in a radial arrangement to surround the central baffle. Gas distribution unit for a substrate processing apparatus comprising a. The method of claim 12,
And the gas supply unit includes a plurality of gas supply pipes for supplying the process gas to each of the upper diffusion regions. A gas diffusion unit having a process gas diffusion space therein;
A gas supply unit for supplying a process gas into the process gas diffusion space;
A first plate provided under the gas diffusion part and having a plurality of injection holes formed to penetrate vertically;
And a second plate provided between the gas supply unit and the first plate to divide the process gas diffusion space into an upper diffusion region and a lower diffusion region within the process gas diffusion region, and
The gas distribution unit for a substrate processing apparatus, wherein the upper diffusion region is evenly divided into a plurality of diffusion regions having the same width by a partition wall. The method of claim 15,
The gas distribution unit for a substrate processing apparatus, wherein the process gas supplied to the upper diffusion region hits one surface of the second plate, diffuses in a horizontal direction, and then flows to the lower diffusion region. The method of claim 16,
The gas distribution unit for a substrate processing apparatus, wherein the partition wall is integrally attached to the second plate.

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