KR101993669B1 - Gas injecting device and substrate processing apparatus having the same - Google Patents

Abstract

The gas injection device according to the present technology includes a central first injection unit and a plurality of second injection units disposed in a circumferential direction along an edge of the first injection unit, the second injection unit injecting raw material gas into the chamber. A first injection unit, a second injection unit spaced apart from the first injection unit, and arranged between the first injection unit and the second injection unit, respectively; And third injection parts for injecting purge gas to prevent mixing, and the first injection unit includes a plurality of side injection holes for injecting purge gas into a space formed at a connection portion at which the first injection unit and the second injection unit are connected. The plurality of side injection holes may be formed in an area where the first injection part and the second injection part are not disposed.

Description

GAS INJECTING DEVICE AND SUBSTRATE PROCESSING APPARATUS HAVING THE SAME}

The present invention relates to a gas injection device and a substrate processing device having the same.

As the scale of semiconductor devices is gradually reduced, the demand for ultra-thin films is increasing. As the size of the contact hole is reduced, the problem of step coverage is becoming more serious. Atomic layer deposition (ALD) has been used as a deposition method that can overcome various problems.

The principle of the atomic layer deposition method is briefly described as follows.

When the substrate is exposed to the first raw material gas supplied into the chamber, the first raw material gas is chemically adsorbed on the surface of the substrate through reaction with the surface of the substrate to form a monoatomic layer. However, when the surface of the substrate is saturated with the first raw material gas, the first raw material gas of the monoatomic layer or more is in a physical adsorption state without forming a chemisorption state due to non-reactivity between the same ligands. Thereafter, when the substrate is exposed to the purge gas, the first raw material gas in the physical adsorption state existing on the substrate is removed by the purge gas. Subsequently, when the substrate is exposed to the second raw material gas, the second raw material gas reacts with the ligands of the first raw material gas chemisorbed on the surface of the substrate to form a second layer, and the second layer does not react with the first layer. The raw material gas is in the physical adsorption state, and is removed by the purge gas when the substrate is exposed to the purge gas again. And the surface of this second layer is in a state capable of reacting with the first raw material gas. This process is repeated one cycle and several cycles are repeated until a thin film of desired thickness is formed on the substrate.

Conventional substrate processing apparatus may include a gas injection device for supplying gas into the chamber. This gas injection device may inject process gases such as source gas, reaction gas and purge gas.

Referring to FIGS. 1 and 2, the gas injection device 30 includes a first injection unit 31 formed at a lower center of the top lid 12 of the chamber, and a first injection unit below the top lid 12. A plurality of second injection units 33 are formed in a shape similar to a fan shape along the circumferential direction of 31 to inject different kinds of gases.

On the other hand, the gas injection device 30 is because each injection unit 31, 33 is coupled to the bottom of the top lid 12 in an assembled manner, due to the assembly tolerance between each injection unit (31, 33) Space G may be formed. However, when the process gas is injected in the process of forming a thin film, a phenomenon in which gas flows into the space G formed between the injection units 31 and 33 is caused by a pressure difference.

The gas introduced into the space G causes a gas phase chemical reaction on the substrate to form an undesirable thin film on the substrate.

In addition, the gas introduced into the space G causes a gaseous chemical reaction in the space to form particles, and the particles fall on the substrate to deteriorate the quality of the thin film. In addition, the particles thus formed are stacked in the space G, which contaminates the gas injection device 30, making it difficult to maintain.

In order to solve the above problems, a plurality of side injection holes 32 are formed along the entire circumference of the outer surface of the first injection unit 31, and the purge gas injected through the first injection unit 31 has a plurality of side injection holes. Through the 32 can be injected into the space (G).

However, when the plurality of side injection holes 32 are formed along the entire circumference of the outer surface of the first injection unit 31 as described above, the purge gas may flow into the unwanted area. For example, when the purge gas flows into the injection unit side in which the source gas is injected in the second injection unit 33, physical and chemical adsorption of the raw material occurs on the substrate, and when the purge gas flows into the injection unit side in which the reaction gas is injected, There is a problem that affects the thickness distribution of the thin film formed on the substrate.

Embodiments of the present invention provide a gas injection device and a substrate treating apparatus having the same, which can prevent the source gas and the reaction gas from being mixed when the thin film is deposited.

According to an embodiment of the present invention, when the purge gas is excessively supplied to the region where the source gas and the reaction gas are supplied to prevent the source gas and the reaction gas from being mixed, the adsorption of the source gas is reduced, thereby Provided is a gas injection device capable of preventing the thickness distribution of a thin film deposited on the substrate from being lowered, and a substrate treating apparatus having the same.

The gas injection device for injecting the process gas into the chamber according to an embodiment of the present invention includes a first injection unit in the center and a plurality of second injection units disposed in the circumferential direction along an edge of the first injection unit. The second injection unit may include a first injection unit for injecting raw material gas into the chamber, a second injection unit spaced apart from the first injection unit, and injecting reaction gas into the chamber, and the first injection unit; A third injection unit disposed between the second injection unit and injecting a purge gas to mix the source gas and the reaction gas into the chamber, wherein the first injection unit includes the first injection unit and the first injection unit; A plurality of side injection holes for injecting purge gas into a space formed at the connection portion to which the second injection unit is connected are formed, and the plurality of side injection holes are formed in an area where the first injection part and the second injection part are not disposed. Can.

A substrate processing apparatus according to an embodiment of the present invention includes a chamber and a gas injection device for injecting a process gas into the chamber, wherein the chamber includes a body having an open top, a plurality of bodies covering the body and supplied with a process gas. A top lead formed with a gas inlet of the gas, wherein the process gas includes a source gas, a reaction gas, and a purge gas, and the gas injection unit is coupled to a lower center of the top lead; A second injection unit coupled to a lower part of the lid and disposed in a circumferential direction along an edge of the first injection unit, wherein the second injection unit includes a first injection unit for injecting raw material gas into the chamber; A second injection unit spaced apart from the first injection unit and configured to inject a reaction gas into the chamber, and between the first injection unit and the second injection unit, respectively; And third injection parts for injecting purge gas to prevent the reaction gas from mixing, and injecting the purge gas into a space formed at a connection portion at which the first injection unit and the second injection unit are connected to the first injection unit. A plurality of side injection holes are formed so as to communicate with at least one second purge gas inlet of the plurality of gas inlet, the plurality of side injection holes are formed in an area where the first injection portion and the second injection portion are not disposed Can be.

According to an embodiment of the present invention, as the purge gas is injected into the space between the first injection unit and the plurality of second injection units, the source gas and the reaction gas may be prevented from being mixed with each other.

According to an embodiment of the present invention, the purge gas is injected into the space between the first spray unit and the plurality of second spray units, and the purge gas is sprayed only to the region where the purge gas is sprayed among the spray units constituting the second spray unit. By spraying, it is possible to prevent the lowering of adsorption of the raw material and the thickness distribution of the thin film.

1 is a cross-sectional view showing a conventional substrate processing apparatus.
FIG. 2 is a bottom view of FIG. 1.
3 is a cross-sectional view schematically showing a substrate processing apparatus according to a first embodiment of the present invention.
4 is an enlarged view of FIG. 3.
FIG. 5 is a bottom view of the gas injection device shown in FIG. 3.
6 is a cross-sectional view showing a part of a substrate processing apparatus according to a second embodiment of the present invention.
FIG. 7 is a plan view of the first spray unit illustrated in FIG. 6.
FIG. 8 is a bottom view of the gas injection device shown in FIG. 6.

Advantages and features of the present invention, and methods for achieving the same will be described with reference to embodiments described below in detail with the accompanying drawings. However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. However, the present embodiments are provided to explain in detail enough to easily implement the technical idea of the present invention to those skilled in the art.

Referring to FIG. 3, the substrate treating apparatus according to the first embodiment of the present invention may include a chamber 110, a substrate supporting unit 120, and a gas injection device 130.

The chamber 110 may include a main body 111 in which an upper portion of which the plasma is generated is opened, and a top lid 112 installed in the upper part of the main body 111 to be opened and closed. The top lid 112 configured as described above may be coupled to the upper portion of the main body 111 to close the inside of the main body 111. In addition, a processing space may be formed inside the chamber 110 where the top lid 112 and the main body 111 are coupled to each other, for example, to process a substrate such as a deposition process.

Since the processing space should generally be formed in a vacuum atmosphere, an exhaust port 113 for discharging gas existing in the processing space may be formed at a predetermined position of the chamber 110. The exhaust port 113 may be connected to an exhaust pipe 51 connected to a pump (not shown) provided outside.

A through hole 114 into which the rotating shaft 123 of the substrate support part 120 to be described later is inserted may be formed on the bottom surface of the main body 111. A side surface of the main body 111 may be provided with a gate valve (not shown) for bringing the substrate S into or into the chamber 110.

The top lead 112 may be provided with a plurality of gas inlets 115 to which gas supply pipes 53 for supplying process gas into the chamber 111 are connected. Detailed description of the gas introduction port 115 will be described later. Here, on the gas supply pipe 53, an MFC (not shown) for controlling the flow rate of the process gas, for example, source gas or reaction gas or purge gas, supplied through the gas supply pipe 53 may be installed.

The substrate support part 120 serves to support the substrate S in the chamber 110 and may include a support plate 121 and a rotation shaft 123.

The support plate 121 may have a disc shape and may be provided in a horizontal direction inside the chamber 110. A plurality of substrate seating parts 122 may be disposed on the support plate 121 along a predetermined interval. The substrate seating unit 122 is preferably formed in the shape of a recess in which the substrate is seated so as to prevent detachment of the mounted substrate S when the support plate 121 is rotated for thin film deposition. In addition, a heater (not shown) may be provided below or inside the support plate 121 to heat the substrate S to a constant process temperature.

The rotating shaft 123 may be vertically connected to the bottom surface of the support plate 121. The rotation shaft 123 is connected to a driving means (not shown) such as a motor outside the through hole 114 to lift and rotate the support plate 121. At this time, by sealing the space between the rotating shaft 123 and the through hole 114 by using a bellows (not shown), it is possible to prevent the vacuum in the chamber 110 is released during the deposition of the thin film.

The gas injection device 130 serves to inject process gases, such as source gas, reaction gas, and purge gas, to the substrate support 120. 3 and 4, the gas injection device may include a first injection unit 131 and a plurality of second injection units 133 disposed on an outer circumference of the first injection unit 131. have.

In detail, the first spray unit 131 includes a first body 1311 coupled to the lower center of the top lid 112, and a second body 1316 coupled to the lower portion of the first body 1311.

The purge gas introduced through the second purge gas inlet (115P2) of the plurality of gas inlet formed in the top lead 122 is diffused in the upper portion of the first body (1311) The second diffusion space 1312 is formed.

The purge gas introduced through the first purge gas inlet 115P1 among the plurality of gas inlets formed in the top lid 122 is supplied to the second diffusion space 1312 in isolation from the first diffusion space 1313. The protruding portion having a through flow passage extending upward from the first body 1311, that is, the through hole 1314 is formed.

A first diffusion space 1313 is formed at the lower portion of the first body 1311 to diffuse the purge gas introduced through the through passage of the protrusion when the second body 1316 is coupled to the second body 1316.

As described above, the second body 1316 is coupled to the lower portion of the first body 1311 and has a plurality of gas injection holes 1317 formed therein.

The purge gas supplied through the second purge gas introduction port 115P2 according to the above configuration is diffused in the second diffusion space 1312, and then a plurality of side injection holes are formed around the first body 1311. It is injected around the side of the first injection unit 131 through 1315. After the purge gas supplied through the first purge gas introduction port 115P1 is introduced through the through-flow passage formed in the upper portion of the first body 1311 and diffused in the first diffusion space 1313, The plurality of gas injection holes 1317 formed in the second body 1316 is injected downward of the first injection unit 131.

In addition, as the first diffusion space 1313 and the second diffusion space 1312 have independent supply paths as described above, purge gases having different flow rates may be supplied.

In other words, the purge gas serves as an air curtain to prevent other types of gases injected through the second injection unit 133, for example, source gas and reaction gas from mixing with each other at the center of the substrate support unit 120. It may be a curtain gas.

As illustrated in FIGS. 3 to 5, the plurality of second injection units 133 may be coupled along the circumferential direction of the first injection unit 131 at the bottom of the top lid 112. That is, the gas injection device including the first injection unit 131 and the plurality of second injection units 133 coupled along the circumferential direction of the first injection unit 131 may have a circular shape.

The plurality of second injection units 133 may include a first injection unit 133A for injecting source gas, a second injection unit 133B for injecting reaction gas, and a third injection unit 133C for injecting purge gas. ) May be included.

For example, the first injection unit 133A may be disposed on one side of the first injection unit 131, and the second injection unit 133B may face the first injection unit 133A. The third injection unit 133C may be disposed along the circumferential direction of the first injection unit 131, and may be disposed between the first injection unit 133A and the second injection unit 133B. Can be arranged.

Each of the injection parts 133A, 133B, and 133C may be formed in a shape similar to a fan shape. Each of the spraying portions 133A, 133B, and 133C may include a flat plate portion 1331 having a fan shape, and an edge portion 1333 vertically protruding toward the top lid 112 along the edge of the flat plate portion 1331. Can be. As a result, a third diffusion space 1334 may be formed in each of the injection parts 133A, 133B, and 133C by the edge part 1333 and the flat plate part 1331.

In addition, one of the gas inlets 115 through which one side passes through the top lid 112 communicates with each other in the third diffusion space 1334 of the respective injection units, and the other side includes a plurality of gas injection holes formed in the flat plate 1331. 1332 is in communication.

For example, the source gas inlet port to which the source gas supply pipe 53S is connected may communicate with the third diffusion space 1334 of the first injection unit 133A, and the raw material diffused from the third diffusion space 1334. The gas may be injected onto the substrate support part 120 through the gas injection hole 1332.

The reaction gas inlet to which the reaction gas supply pipe 53R for supplying the reaction gas is connected may communicate with the third diffusion space 1334 of the second injection unit 133B, and the reaction introduced into the third diffusion space 1334. The gas may be injected onto the substrate support part 120 through the gas injection hole 1332.

A third purge gas inlet (not shown) connected to a purge gas supply pipe (not shown) for supplying purge gas may communicate with the third diffusion space 1334 of the third injection unit 133C, and the second diffusion space The purge gas introduced into the 1334 may be injected onto the substrate support 120 through the gas injection hole 1334.

On the other hand, the side injection hole 1315 of the first injection unit 131 has a space (G) due to the pressure difference between the space (G) and the surrounding area is injected from the second injection unit 133 in the process of depositing a thin film It is formed to prevent from entering.

That is, the curtain gas, for example, the purge gas, introduced into the space G through the side injection hole 1315 may prevent the source gas or the reactant gas from entering the space G and be mixed with each other during the deposition of the thin film. Can be.

However, when the purge gas introduced into the space G through the side injection hole 1315 is introduced into the first injection unit 133A where the raw material gas is injected, physical and chemical adsorption of raw materials on the substrate may occur during thin film deposition. Can be.

When the purge gas introduced into the space G through the side injection hole 1315 is introduced into the second injection unit 133B through which the reaction gas is injected, the thickness distribution of the thin film formed on the substrate may be affected.

In order to prevent this, the plurality of side injection holes 1315 may be formed in an area where the first and second injection parts 133A and 133B through which the source gas and the reaction gas are injected are not disposed. In other words, the purge gas supplied through the gas supply pipe 53P2 may sequentially pass through the gas introduction port 115P2, the second diffusion space 1312, and the plurality of side injection ports 1315, and the first injection unit 131. The second spray unit 133 may flow into a space formed at a connection portion to which it is connected.

At this time, the source gas may flow into the space formed at the connection portion where the first injection unit 131 and the first injection unit 133A of the second injection unit 133 are connected, and the first injection unit 131 may be introduced. The reaction gas may be introduced into a space formed at a connection portion to which the second injection unit 133B of the second injection unit 133 is connected.

However, in the first embodiment of the present invention, as the purge gas is introduced through the third injection unit 133C located in the space between the first injection unit 131 and the second injection unit 133, Since the source gas injected through the injection unit 133A and the reaction gas injected through the second injection unit 133B do not mix with each other due to the purge gas introduced into the region where the third injection unit 133C is disposed, they react with each other. It is possible to suppress the formation of particles.

At the same time, since the flow rate of the purge gas injected through the gas injection hole 1317 of the first injection unit 131 and the flow rate of the purge gas injected through the side injection port 1315 can be adjusted independently, the space G It is possible to prevent the purge gas from being oversupplied.

Further, since the purge gas does not flow into the space formed at the connection portion between the first injection unit 131 and the first injection unit 133A of the second injection unit 133, the purge gas is injected into the first gas source gas. It is introduced to the injection unit 133A side to prevent the physical and chemical adsorption degradation of the raw material on the substrate during the thin film deposition process.

Since the purge gas does not flow into the space formed at the connection portion between the first injection unit 131 and the second injection unit 133B of the second injection unit 133, the second injection unit through which the reaction gas is injected is purge gas. Flow into the 133B side may improve the thickness distribution of the thin film in the central region of the substrate support part 120.

On the other hand, when the purge gas is injected into the space in the substrate processing apparatus having the structure as described above it is efficient to the thickness distribution of the thin film as follows.

Average thickness Thickness spread (max.-min.) (Å) Comparative Example 1 251.6 16.9 Comparative Example 2 256.4 8.4 Example 377.28 4.9

At this time, Comparative Example 1 is a state in which no purge gas is injected into a space formed at a connection portion between the first spray unit and the plurality of second spray units. In Comparative Example 2, the purge gas is injected into a space formed at the connection portion between the first spray unit and the plurality of second spray units, but the purge gas is sprayed around the entire side surface of the first spray unit. According to the embodiment of the present invention, the purge gas is injected into a space formed at the connection portion between the first injection unit and the plurality of second injection units, but the first and second injection parts in which the source gas and the reaction gas are injected are not provided. The purge gas is injected only to the region where it is arranged.

Looking at [Table 1], it can be seen that the thickness distribution is improved because the average thickness of the thin film in the embodiment than Comparative Example 1 and Comparative Example 2, the smallest difference between the maximum and minimum thickness is the smallest.

A second embodiment of the present invention will be described with reference to FIGS. 6 to 8 as follows.

The substrate treating apparatus according to the second embodiment of the present invention may include a chamber 110 (see FIG. 3), a substrate support unit 120 (see FIG. 3), and a gas ejection apparatus 230. Here, the chamber 110 and the substrate support 120 are the same as in the first embodiment of the present invention, so a detailed description thereof will be omitted.

The gas injection device 230 may include a first injection unit 231 and a plurality of second injection units 233 disposed on an outer circumference of the first injection unit 231.

In detail, the first spray unit 231 includes a first body 2311 coupled to the lower center of the top lid 122, and a second body 2316 coupled to the lower portion of the first body 2311.

On the upper part of the first body 2311, when coupled with the top lead 122, the second-first purge gas inlet 115P2 and the second-second of the plurality of gas inlet 115 formed in the top lead 122 A 2-1 diffusion space 2312a and a 2-2 diffusion space 2312b through which the purge gas introduced through the 2 purge gas introduction ports 115P3 are respectively formed are formed. A plurality of side injection holes 2315a and 2315b are formed at an upper circumference of the first body 2311 to communicate with the 2-1 diffusion space 2312a or the 2-2 diffusion space 2312b. The first purge gas inlet of the plurality of gas inlets 115 formed in the top lid 122 is formed in the second-first diffusion space 2312a and the second-second diffusion space 2312b of the first body 2311. A protrusion having a through flow passage extending from the upper portion of the first body 231, that is, the through hole 2314 is formed so that the purge gas introduced through the 115P1 is supplied to the first diffusion space 2313 in isolation from the first diffusion space 2313. It is.

A first diffusion space 2313 is formed at the lower portion of the first body 2311 to diffuse the purge gas introduced through the through passage of the protrusion when the second body 2316 is coupled to the second body 2316.

As described above, the first body 2311 is coupled to the lower portion of the first body 2311 and has a plurality of gas injection holes 2317 formed therein.

According to the configuration described above, the purge gas supplied through the second-first purge gas introduction port 115P2 is diffused in the second-first diffusion space 2312a, and then formed around the upper portion of the first body 2311. The side surface of the first injection unit 231 is injected through a plurality of side injection holes 2315a.

In addition, after the purge gas supplied through the second-2 purge gas introduction port 115P3 is diffused in the second-2 diffusion space 2312b, a plurality of side injection holes are formed around the upper portion of the first body 2311. It is injected to the other side of the side of the first spraying unit 231 through (2315b).

In addition, the purge gas supplied through the first purge gas introduction port 115P1 flows through the through-flow passage formed in the upper portion of the first body 231 and is diffused in the first diffusion space 2313. The gas is injected downward through the plurality of gas injection holes 2317 formed in the second body 2316.

In this case, the first diffusion space 2313, the 2-1 diffusion space 2312a and the 2-2 diffusion space 2312b have independent supply paths as described above, so that Gas can be supplied.

Since the second body 2316 is the same as the second body 1316 of the first embodiment, a detailed description thereof will be omitted.

The plurality of second injection units 233 may include a first injection unit 233A for injecting source gas, a second injection unit 233B for injecting reaction gas, and a third and fourth injection unit for injecting purge gas ( 233C1,233C2). Here, the detailed structure of each injection unit is the same as in the first embodiment of the present invention, so a detailed description thereof will be omitted.

However, in another embodiment of the present invention, the first injection unit 233A and the second injection unit 233B may inject gas at different flow rates. For example, the flow rate of the source gas injected through the first injection unit 233A may be higher than the flow rate of the reaction gas injected through the second injection unit 233B.

Accordingly, the third injection unit 233C1 disposed between the first injection unit 233A and the second injection unit 233B is disposed between the first injection unit 233A and the other side of the first injection unit 233A and the second injection unit 233B. The fourth injection unit 233C2 may also inject the purge gas at different flow rates. When the purge gas with the same flow rate is supplied to the third injection unit 233C1 having a smaller area than the fourth injection unit 233C2, the purge gas flows into the first injection unit 233A or the second injection unit 233B. This is to prevent it.

The substrate treating apparatus including the gas injection device having the structure as described above is injected through the source gas and the second injection unit 233B, which are injected through the first injection unit 233A, as in the first embodiment of the present invention. The reaction gases can be prevented from mixing with each other.

In addition, as the purge gas is prevented from flowing into the first injection unit 233A, the physical and chemical adsorption of the raw material may be prevented from being deposited during thin film deposition.

As the purge gas is prevented from flowing into the second injection unit 233A, the thickness distribution of the thin film may be improved in the central region of the substrate support unit 120 during thin film deposition.

On the other hand, the present invention has been described with reference to the embodiments shown in the drawings but this is only exemplary, those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. . Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

Claims (11)

In the gas injection device for injecting the process gas into the chamber,
A first spray unit in the center,
It includes a plurality of second injection unit disposed in the circumferential direction along the edge of the first injection unit,
The second injection unit may include a plurality of first injection units for injecting raw material gas into the chamber, a plurality of second injection units disposed to be spaced apart from the first injection unit and for injecting reaction gas into the chamber, and the first injection unit. A plurality of third injection units disposed between the injection unit and the second injection unit, respectively, for injecting purge gas into the chamber such that the source gas and the reaction gas are not mixed;
The first injection unit includes a plurality of side injection holes for injecting purge gas between the first injection unit and the second injection unit,
The plurality of side injection holes may be connected to the first injection unit so that the purge gas is not transferred between the first injection unit and the plurality of first injection units and between the first injection unit and the plurality of second injection units. The second injection portion is formed in the unlocated region,
The first injection unit further includes a plurality of gas injection holes for injecting the purge gas downward,
The first spray unit includes a first body and a second body coupled to the lower side of the first body,
A first diffusion space through which the purge gas is supplied to the first body, a first diffusion space in communication with the through hole, and a purge gas supplied through the through hole, and a purge gas supplied thereto; A second diffusion space is formed to be isolated from each other and the supplied purge gas is diffused,
The plurality of side injection holes are formed in the first body to communicate with the second diffusion space to inject a purge gas into a space formed at the connection portion between the first injection unit and the second injection unit,
And the plurality of gas injection holes are formed in the second body to communicate with the first diffusion space to inject purge gas into the lower portion of the first injection unit. The method of claim 1,
And a purge gas injected through the plurality of side injection holes and a purge gas injected through the plurality of gas injection holes are injected through different flow paths. delete The method of claim 1,
And the second diffusion space is divided into a plurality of regions by a partition wall. A substrate processing apparatus comprising a chamber and a gas injection unit for injecting a process gas into the chamber,
The chamber includes a main body with an open top, and a top lead formed with a plurality of gas inlets for covering the main body and supplied with a process gas.
The process gas includes a source gas, a reaction gas, a purge gas,
The gas injection device includes a first injection unit coupled to the lower center of the top lead, and a plurality of second injection units coupled to the bottom of the top lead and disposed circumferentially along an edge of the first injection unit. and,
The second injection unit may include a plurality of first injection units for injecting raw material gas into the chamber, a plurality of second injection units disposed to be spaced apart from the first injection unit and for injecting reaction gas into the chamber, and the first injection unit. A plurality of third injection units disposed between the injection unit and the second injection unit, respectively, for injecting purge gas into the chamber such that the source gas and the reaction gas are not mixed;
The first injection unit communicates with at least one second purge gas inlet of the plurality of gas inlets to inject a purge gas into a space formed at a connection portion where the first injection unit and the second injection unit are connected. A plurality of side nozzles are formed,
The plurality of side injection holes may be connected to the first injection unit so that the purge gas is not transferred between the first injection unit and the plurality of first injection units and between the first injection unit and the plurality of second injection units. The second injection portion is formed in the unlocated region,
The first injection unit is formed with a first gas injection hole in communication with the first purge gas inlet for supplying the purge gas of the plurality of gas inlet for injecting the purge gas to the lower portion of the first injection unit,
The first spray unit includes a first body and a second body coupled to the lower side of the first body,
The first body has a through hole in communication with the first purge gas inlet of the plurality of gas inlet, a first diffusion space in communication with the through hole and the purge gas supplied through the through hole is diffused, and the plurality of gases A second diffusion space in communication with the second purge gas introduction port, formed to be isolated from the through hole and the first diffusion space, and to which the supplied purge gas is diffused,
The plurality of side injection holes are formed in the first body to communicate with the second diffusion space to inject a purge gas into a space formed at the connection portion between the first injection unit and the second injection unit,
And the plurality of first gas injection holes are formed in the second body to communicate with the first diffusion space to inject purge gas into the lower portion of the first injection unit. The method of claim 5,
And a purge gas injected through the first gas injection hole and a purge gas injected through the plurality of side injection holes are injected through different flow paths. delete The method of claim 5,
The second diffusion space is divided into a plurality of areas by partition walls,
And each one of the plurality of second purge gas inlets communicates with each of the regions. The method of claim 8,
And a plurality of purge gases at different flow rates. The method of claim 5,
Each of the spraying portions includes a third diffusion space configured to diffuse gas supplied in communication with one of a source gas inlet, a reaction gas inlet, and a third purge gas inlet constituting the plurality of gas inlets; And a second injection hole communicating with the diffusion space and for injecting one of the source gas, the reaction gas, and the purge gas diffused through the third diffusion space into the lower portion of each injection portion. The method of claim 6,
And a purge gas injected through the plurality of side injection holes and a purge gas injected through the plurality of first gas injection holes are injected at different flow rates.

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