KR20130067725A

KR20130067725A - Substrate processing apparatus

Info

Publication number: KR20130067725A
Application number: KR1020110134578A
Authority: KR
Inventors: 황희; 김영준; 김영효; 이상진
Original assignee: 주식회사 원익아이피에스
Priority date: 2011-12-14
Filing date: 2011-12-14
Publication date: 2013-06-25

Abstract

The present invention relates to a substrate processing apparatus capable of improving deposition uniformity of a thin film, comprising: a chamber having a space portion formed therein; A substrate support part rotatably installed in the chamber to support a plurality of substrates; A gas injector provided above the substrate support to inject a process gas and a purge gas to the substrate support; And an exhaust passage communicating with the space part and having a plurality of exhaust holes formed on one surface thereof for discharging the process gas and the purge gas, wherein the plurality of exhaust holes discharge the process gas. And a plurality of first exhaust holes for discharging the purge gas and a plurality of second exhaust holes for discharging the purge gas, wherein at least one first exhaust hole of the plurality of first exhaust holes is disposed on the substrate rather than the plurality of second exhaust holes. By locating further from the center of the support, the residence time of the process gas can be increased.

Description

Substrate processing apparatus

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of improving the deposition uniformity of a thin film.

As the degree of integration of semiconductor devices increases, design rules have been reduced to integrate more devices per unit area. Accordingly, there is a need for a deposition method capable of realizing thinner thin film deposition and excellent step coverage. Corresponding deposition methods include atomic layer deposition (ALD).

The atomic layer deposition method utilizes a self-surface reaction limited mechanism.

First, when the substrate mounted in the chamber is exposed to the source gas supplied into the chamber in the first step, the first monoatomic layer is chemisorbed onto the substrate surface through reaction with the substrate surface. However, when the surface of the substrate is saturated with the source gas, the source gases of the monoatomic layer or more do not form a chemisorption state due to non-reactivity between the same ligands, and are in a physical adsorption state. Subsequently, when the substrate is exposed to the purge gas, the raw material gas which is in the physical adsorption state on the substrate surface is removed by the purge gas. After the reaction gas is supplied to the substrate, the second monoatomic layer grows through the substitution reaction between the source gas and the ligand of the reaction gas, and the reaction gas that does not react with the first monoatomic layer is in the physical adsorption state. Then, when the purge gas is supplied to the substrate again, the reaction gas in the physical adsorption state is removed by the purge gas, and the second monoatomic layer is in a state capable of reacting with the supplied source gas. This process is repeated one cycle and several cycles are repeated until a thin film of a desired thickness is formed on the substrate.

On the other hand, the substrate processing apparatus for forming an atomic layer thin film is a chamber for forming a reaction space, a substrate supporting portion which is formed to be elevated and rotatable while supporting the substrate and a gas for supplying process gases such as raw material gas and reactive gas purge gas. It is comprised including an injection body. In addition, the chamber is provided with an exhaust passage in which a plurality of exhaust holes are formed in the upper surface to form a vacuum in the chamber and discharge residual gas and reaction by-products. The exhaust passage is connected to an exhaust pipe connected to a pump outside the chamber through an exhaust port formed in the chamber.

The exhaust holes formed in the upper surface of the exhaust flow path are formed at regular intervals over the entire area of the exhaust flow path, and are formed at the same distance from the edge of the substrate support. Therefore, the process gas and the purge gas supplied into the chamber while the thin film is formed on the substrate is discharged through the exhaust hole to the exhaust flow path at about the same speed. However, the process gas, that is, the source gas and the reactant gas, which substantially forms the thin film, is preferably sprayed from the gas injector and stays on the substrate for a predetermined time to form the thin film. However, the process gas rapidly flows into the exhaust passage and is discharged into the exhaust pipe.

In particular, the substrate support portion is rotated during the formation of the thin film, wherein the edge side of the substrate support portion is located adjacent to the exhaust passage so that the process gas discharge rate is faster than that of other regions compared to the center side of the substrate support portion. The residence time of the gas is short compared to other areas. Therefore, since the thin film is not deposited smoothly in the region located at the edge of the substrate support part, it is difficult to deposit a thin film having a desired thickness, and thus there is a problem that the uniformity of deposition of the thin film is reduced over the entire area of the substrate. This not only lowers the reliability of the device but also causes a problem of lowering process efficiency and productivity.

KR 1006177 B1

The present invention provides a substrate processing apparatus that can adjust the residence time of the gas supplied into the chamber.

The present invention provides a substrate processing apparatus capable of depositing a thin film of excellent quality by improving the deposition uniformity of the thin film.

The present invention provides a substrate processing apparatus capable of improving process efficiency and productivity.

A substrate processing apparatus according to an embodiment of the present invention includes a chamber in which a space portion is formed; A substrate support part rotatably installed in the chamber to support a plurality of substrates; A gas injector provided above the substrate support to inject a process gas and a purge gas to the substrate support; And an exhaust passage communicating with the space part and having a plurality of exhaust holes formed on one surface thereof for discharging the process gas and the purge gas, wherein the plurality of exhaust holes discharge the process gas. And a plurality of first exhaust holes for discharging the purge gas and a plurality of second exhaust holes for discharging the purge gas, wherein at least one first exhaust hole of the plurality of first exhaust holes is disposed on the substrate rather than the plurality of second exhaust holes. Characterized in that it is located further away from the center of the support.

In this case, sizes of the first exhaust hole and the second exhaust hole are the same, and the distance between the center of the first exhaust hole and the center of the substrate support may be longer than the distance between the center of the second exhaust hole and the center of the substrate support.

Also, at least one of the plurality of first exhaust holes may include an exhaust hole cap having a through hole formed in a size smaller than that of the first exhaust hole.

A substrate processing apparatus according to an embodiment of the present invention includes a chamber in which a space portion is formed; A substrate support part rotatably installed in the chamber to support a plurality of substrates; A gas injector provided above the substrate support to inject a process gas and a purge gas to the substrate support; And an exhaust passage communicating with the space part and having a plurality of exhaust holes formed on one surface thereof for discharging the process gas and the purge gas injected from the gas spraying body, wherein the plurality of exhaust holes discharge the process gas. And a plurality of first exhaust holes for discharging the purge gas and a plurality of second exhaust holes for discharging the purge gas, wherein at least one of the plurality of first exhaust holes is smaller than the plurality of second exhaust holes. It features.

In this case, the exhaust passage may be formed along the lower inner wall of the chamber, and an exhaust port communicating with the exhaust passage may be formed at the bottom of the chamber.

In addition, a filling member may be further provided between the gas injection body and the inner wall of the chamber.

The exhaust passage may be formed along an upper inner wall of the chamber, and an exhaust port communicating with the exhaust passage may be formed at the upper portion of the chamber, and a filling member may be further provided between the substrate support and the chamber inner wall.

One surface of the exhaust passage in which the plurality of exhaust holes are formed is bisected with respect to the center of the width direction, and the plurality of first exhaust holes are formed on one outer surface of the bisected exhaust passage, and the plurality of second exhaust holes are provided. May be formed on one inner surface of the bisected exhaust passage.

The first exhaust hole may be formed in an area corresponding to the injection area of the process gas, and the second exhaust hole may be formed in an area where the purge gas is injected, and the number of the first exhaust holes may be determined by the first exhaust hole. It may be less than the number of double exhaust holes.

Meanwhile, an exhaust hole cap for closing the first exhaust hole may be inserted into at least one of the plurality of first exhaust holes.

In the substrate treating apparatus according to the embodiment of the present invention, the uniformity of deposition of the thin film can be improved by adjusting the discharge rates of the process gas and the purge gas. Accordingly, by adjusting the arrangement structure, size, and number of exhaust holes formed in the exhaust flow path, the process gas discharge rate is decreased to increase the residence time of the process gas, thereby uniformly depositing thin films over the entire area of the substrate. In particular, the thin film thickness control in the board | substrate area | region located in the edge side of a board | substrate support can be made easy. Through this, it is possible to improve the deposition uniformity of the thin film and to deposit a thin film of excellent quality. In addition, the deposition failure of the thin film can be prevented to improve process efficiency and productivity.

1 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 conceptually illustrates changes in flow rates of process gas and purge gas discharged into an exhaust passage formed in the substrate processing apparatus of FIG. 1;
3 is a schematic cross-sectional view of a substrate processing apparatus according to another embodiment of the present invention.
4 is a view illustrating an example of an exhaust passage applied to the substrate processing apparatus of FIGS. 1 and 3.
5 is a view showing a modification of the exhaust passage.
6 shows another modified example of the exhaust passage.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

FIG. 1 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention, and FIG. 2 is a view conceptually illustrating changes in flow rates of process gas and purge gas discharged into an exhaust passage formed in the substrate processing apparatus of FIG. 1.

Referring to FIG. 1, a substrate processing apparatus according to an exemplary embodiment of the present invention includes a chamber 100, a substrate support unit 120, a gas spray body 130, and a gas discharge device.

The chamber 100 includes a main body 102 having an open upper portion, and a top lead 132 installed on the upper portion of the main body 102 to be opened and closed. When the top lead 132 is coupled to the upper portion of the main body 102 to close the inside of the main body 102, a space portion for processing the substrate W is formed in the chamber 100, for example, a deposition process. .

Since the space portion should generally be formed in a vacuum atmosphere, a gas discharge device for discharging the gas existing in the space portion may be provided at a predetermined position of the chamber 100. In this case, the gas discharge device has an exhaust passage 160 formed along the inner edge of the main body 102, and an exhaust port 106 passing through the lower portion of the main body 102, for example, the main body 102, and communicating with the exhaust passage 160. ). In addition, the exhaust port 106 is again connected to the exhaust pipe 170 connected to an external pump (not shown). The exhaust passage 160 may be formed using an inner wall of the body 102, for example, a side wall and a bottom surface. The exhaust passage 160 may be formed by a partition wall 162 spaced apart from an inner sidewall of the body 102 and a baffle 164 connecting the partition wall 162 and the inner sidewall of the body 102. A plurality of exhaust holes 166 and 168 are formed in the baffle 164 to suck the air in the space or the gas and by-products remaining when the thin film is deposited, and the exhaust pipe 170 connected to the exhaust port 106 through the exhaust flow path 160. To be discharged.

In the embodiment of the present invention, the exhaust hole 166 formed in the baffle 164 to control the residence time of the gas by adjusting the gas discharge rate for each injection region of the gas, that is, the process gas and the purge gas injected through the gas injector , 168) was adjusted. The thickness of the thin film on the substrate W, particularly in the region of the substrate W located on the edge side of the support plate 122 of the substrate support part 120 to be described later, can be easily controlled. In other words, conventionally, the edge side of the support plate 122 is located close to the exhaust holes 166 and 168 formed in the exhaust flow path 160, so that the support plate 122 is compared with other regions of the substrate W during thin film deposition. The process speed of the process gas (S, R) on the substrate (W) located on the edge side of the substrate is fast and the residence time is short, so that it is difficult to control the thickness of the thin film formed on the substrate (W) located on the edge of the support plate. there was. In order to increase the residence time by reducing the discharge rate of the process gas (S, R), there may be a method of reducing the torque of the pump, but in this case, the discharge rate of the purge gas (P) is also reduced. When the discharge rate of the gas is reduced, the purge gas P does not sufficiently perform the role of the air curtain, which also causes a problem that mixing between different gases is inevitable. In order to solve this problem, as shown in FIG. 2, the residence time of the process gases S and R staying on the substrate support 120, ie, the support plate 122, is increased, thereby increasing the surface of the substrate W and the process gas ( The contact time of S and R) can be increased. In particular, since the discharge speed of the process gas (S, R) at the edge of the support plate 122 can be reduced, the thickness of the thin film on the substrate W positioned at the edge of the support plate 122 can be easily controlled. The deposition uniformity of the thin film formed over the entire area of the substrate W was improved.

As such, the arrangement of the exhaust holes 166 and 168 may be variously changed in order to reduce the discharge speed of the process gases S and R, which will be described later in the following embodiments.

In addition, the bottom surface of the main body 102 is formed with a through hole 104 into which the rotation shaft 126 of the substrate support part 120 to be described later is inserted. Gate valves (not shown) are formed on sidewalls of the main body 102 to carry the substrate W into or out of the chamber 100.

The substrate support unit 120 is a structure for supporting the substrate W, and includes a support plate 122 and a rotation shaft 126. The support plate 122 is provided in a horizontal direction inside the chamber 100 in a disc shape, and the rotation shaft 126 is vertically connected to the bottom of the support plate 122. The rotating shaft 126 is connected to a driving means (not shown) such as a motor outside the through hole 104 to lift and rotate the support plate 122. At this time, by sealing the space between the rotating shaft 126 and the through hole 104 by using a bellows (not shown) to prevent the vacuum in the chamber 100 is released in the process of depositing a thin film.

In addition, a plurality of substrate seating portions 124 is formed at a predetermined interval on the support plate 122. The substrate mounting part 124 may be formed in a recessed shape so as to prevent detachment of the mounted substrate W during the rotation of the support plate 122 for thin film deposition. In addition, a heater (not shown) may be provided below or inside the support plate 122 to heat the substrate W to a constant process temperature.

The gas injector 130 is provided to be spaced apart from the upper portion of the substrate support 120, and injects a process gas such as source gas S, a reaction gas R, and a purge gas P toward the substrate support 120. The gas injection body 130 includes a plurality of gas injection units for injecting different kinds of gases, and each gas injection unit has a shape similar to a fan shape and is arranged based on the center of the support plate 122.

In addition, each gas injection unit shares the top lead 132 in a form occupying a portion of the top lead 132, the injection plate formed with a plurality of gas injection holes 136 under the top lead 132 ( 134 is combined. The gas injection unit thus formed forms a gas diffusion space between the injection plate 134 and the top lead 132.

In addition, the gas inlet 140 is formed in the top lead 132 in a number corresponding to the number of gas injection units to communicate with the gas diffusion space between the top lead 132 and the injection plate 134. Each gas inlet 140 is selectively connected to various external gas supply sources (not shown).

Here, an example in which the injection plate 134 occupies a portion of the top lid 132 and is combined to form a gas injection unit is described, but a plurality of gas injection units may be formed separately. In addition, the gas injection unit may further include a central gas injection unit 150 for injecting purge gas to prevent the source gas and the reaction gas from being mixed at the center of the substrate support unit 120. In addition, an intermediate plate (not shown) having an injection hole (not shown) may be interposed between the top lead 132 and the injection plate 134. In this case, the gas introduced into the gas injection unit through the gas inlet 140 may be uniformly diffused in the gas diffusion space formed between the top lead 132 and the intermediate plate and between the intermediate plate and the injection plate 134. . That is, the process gas introduced through the gas inlet 140 may be supplied to the substrate W only after being completely diffused in the gas diffusion space so that the process gas may be uniformly supplied over the entire area of the substrate W. FIG. By interposing the intermediate plate between the top lead 132 and the injection plate 134, the gas supplied from the gas inlet 140 is first diffused between the intermediate plate and the top lead 132 and then to the intermediate plate It is discharged through the formed injection hole, and then secondly diffused between the intermediate plate and the injection plate 134 to be supplied to the substrate (W). The process gas is completely diffused in the gas diffusion space through two diffusion processes, and thus may be evenly sprayed on the entire area of the substrate W. FIG.

A ring-shaped filling member 138 may be further formed between the gas sprayer and the chamber inner wall. Specifically, the filling member 138 protrudes from the bottom edge of the top lead 132 corresponding to the exhaust passage 160, and may be formed within a range that does not prevent gas injection from the injection plate. The filling member 138 formed as described above increases the density of the process gas in the reaction space between the gas injector and the substrate support by reducing the gap formed between the exhaust passage 160 and the gas injector, that is, the top lead. do.

Meanwhile, in the above-described substrate treating apparatus, the exhaust passage 160 is formed along the lower inner wall of the chamber 100. However, the exhaust passage 160 may be formed along the upper inner wall of the chamber 100, as shown in FIG. have.

The exhaust passage 160 ′ is formed on the bottom surface of the top lid 132 by a partition wall 162 ′ formed to be spaced apart from the inner wall of the main body 102, and a plurality of exhaust holes 166 ′ and 168 ′ are formed, and the partition wall 162 is formed. ') And the baffle 164' connecting the inner sidewall of the body 102. In addition, an exhaust port 106 ′ is formed in the top lead 132 to communicate with the exhaust flow path 160 ′, and an exhaust pipe connecting air, process gas, residue, etc. in the chamber 100 to the exhaust port 106 ′ ( 170 '). Here, although the exhaust port 106 is described as being formed in the top lead 132, it may be formed in the body 102, it may be formed to communicate with the exhaust flow path 106 'in the upper direction of the chamber 100. have.

In this case, unlike the substrate processing apparatus of FIG. 1, since the gas injected from the gas injector 130 is discharged through the exhaust passage 160 ′ formed in the upper side of the chamber 100, the substrate support 120 Structure such as the filling member 138 of FIG. 1 between the substrate support 120 and the inner wall of the chamber 100 to prevent the gas injected into the chamber 100 from being diffused to the lower side of the chamber 100, for example, the lower side of the support plate 122. It is necessary to form Accordingly, the filling member 138 protrudes from the inner wall of the main body 102 to face the baffle 164 ′ at a position spaced apart from the exhaust passage 160 ′ and the substrate support 120 by a predetermined distance below the baffle 164 ′. Form '). The filling member 138 ′ suppresses the gas injected from the gas injector 130 to diffuse downward into the chamber 100 so that the gas may be smoothly discharged into the exhaust passage 160 ′. In this case, in order to smoothly discharge the gas, the filling member 138 'is preferably formed at a height lower than at least the support plate 122 on which the substrate W is mounted.

In the process of depositing a thin film on the substrate using the substrate processing apparatus configured as described above, the gas sprayer continuously injects the source gas S, the reaction gas R and the purge gas P to the substrate support, The discharge device continuously discharges residual gas and by-products in the chamber.

As mentioned above, in the embodiment of the present invention, when the residual gas and by-products in the chamber are discharged through the gas discharge device, the size, number and arrangement positions of the exhaust holes formed in the exhaust flow paths 160 and 160 'are described. By varying, the process gas is reduced without reducing the rate of purge gas. The structure of such an exhaust passage can be equally applied to the substrate processing apparatus shown in FIGS. 1 and 3, and hereinafter, the substrate processing apparatus illustrated in FIG. 1 will be described.

4 is a diagram illustrating an example of an exhaust passage applied to the substrate processing apparatus of FIG. 1.

Referring to FIGS. 4A and 4B, a plurality of exhaust holes 166 and 168 are formed in the baffle 164 forming the exhaust passage 160, and the plurality of exhaust holes 166 and 168 are formed. Is formed in a group in the corresponding portions of the process gas, that is, the source gas S and the reaction gas R injection zone and the purge gas P injection zone, respectively. Since the gas injection body 130 and the exhaust passage 160 are fixed to the chamber 100, and the substrate support part 120 is formed to be rotatable, the injection zone and the discharge zone for each gas are formed to correspond to each other. Accordingly, the exhaust hole formed in the portion corresponding to the injection region of the source gas S and the reaction gas R discharges the source gas S and the reaction gas R, and is defined as a first exhaust hole 166. In addition, an exhaust hole formed in a portion corresponding to the purge gas P injection region discharges the purge gas P and is defined as a second exhaust hole 168.

Here, the first exhaust hole 166 and the second exhaust hole 168 are formed in the same size in the baffle 164 forming the upper surface of the exhaust flow path 160, the first exhaust hole 166 is made of It may be formed closer to the inner wall of the chamber 100 than the exhaust hole 168. That is, the first exhaust hole 166 formed in the injection region of the source gas S and the reaction gas R is formed farther from the edge of the support plate 122 of the substrate support 120 than the second exhaust hole 168. As a result, it is formed closer to the inner wall of the chamber 100. For example, as illustrated in FIG. 4, when the width of the exhaust passage 160, that is, the baffle 164 is bisected based on the width center of the baffle 164, the first exhaust hole 166 is bisected to the outer baffle 166. The second exhaust hole 168 may be formed in the inner baffle 166 which is bisected. Through such a structure, the distance from which the source gas S and the reaction gas R injected from the gas injector 130 to the substrate support part 120 is increased to the first exhaust hole 166 is increased. The time for the (S) and the reaction gas R to stay on the substrate W is increased. In addition, the first exhaust hole 166 is formed farther from the edge of the support plate 122 to reduce the gas flow rate at the edge of the support plate 122, consequently located on the edge side of the support plate 122 Since the surface of the substrate W and the residence time of the source gas S and the reaction gas R may increase, the thin film may be effectively deposited, thereby improving the deposition uniformity of the thin film over the entire area of the substrate W. FIG.

Meanwhile, in the drawings, all of the plurality of first exhaust holes 166 are formed farther from the support plate 122 than the second exhaust holes 168, but at least one of the plurality of first exhaust holes 166 is formed. The first exhaust hole 166 may be formed farther from the support plate 122 than the second exhaust holes 168.

In addition, although the first exhaust hole 166 and the second exhaust hole 168 are all shown to be the same size, the first exhaust hole 166 may be formed to have a smaller size than the second exhaust hole 168. have.

5 is a view showing a modified example of the exhaust passage.

Referring to FIGS. 5A and 5B, the first exhaust hole 166 and the second exhaust hole 168 are located at the same distance from the edge of the support plate 122 and the first exhaust hole 166. ) Is formed in a smaller size than the second exhaust hole 168. Through this configuration, the source gas S and the reaction gas R discharged through the first exhaust hole 166 are discharged more slowly than the purge gas P discharged through the second exhaust hole 168. That is, the exhaust flow path 160 is connected to an external pump through the exhaust pipe 170. When the pump is operated to discharge the gas and the air in the chamber 100, the gas flows rapidly at a location where the size of the exhaust hole is large. Will be discharged. Therefore, the size of the first exhaust hole 166 through which the source gas S and the reaction gas R are discharged is smaller than that of the second exhaust hole 168 through which the purge gas P is discharged. ) And the residence time can be increased by reducing the discharge rate of the reaction gas (R).

6 is a view showing another modified example of the exhaust passage.

Referring to FIG. 6, it can be seen that the first exhaust hole 166 and the second exhaust hole 168 are formed in the same size and the same number in the exhaust flow path 160. At this time, if necessary, by adjusting the size or number of the first exhaust hole 166 through which the source gas S and the reaction gas R are discharged, the discharge rate of the source gas S and the reaction gas R may be reduced. Can be. Here, by inserting the exhaust hole caps 200 and 210 separately manufactured in the first exhaust hole 166, the gas residence time is adjusted by adjusting the gas discharge rate in the source gas S and the reaction gas R injection zones. I can regulate it.

In FIG. 6A, in forming the exhaust hole cap 200 inserted into the first exhaust hole 166, a through hole having a size smaller than the size of the first exhaust hole 166 is formed at the center of the exhaust hole cap. Formed. When the exhaust hole cap formed as described above is selectively inserted into the first exhaust hole 166, the size of some of the first exhaust holes 166 of the plurality of first exhaust holes 166 is reduced, so that the first exhaust hole 166 is reduced. Raw material by reducing the discharge rate of the raw material gas (S) and the reaction gas (R) discharged through a) than the discharge rate of the purge gas (P) discharged through the plurality of second exhaust holes 168 formed in the same size The residence time of the gas S and the reaction gas R can be increased.

In addition, in FIG. 6B, the first exhaust hole 166 is selectively closed using an exhaust hole cap 210 formed so as to completely close the first exhaust hole 166. The residence time of the reaction gas (R) was adjusted. That is, since the number of the first exhaust holes 166 through which the source gas S and the reaction gas R are discharged is relatively smaller than the number of the second exhaust holes 168 through which the purge gas P is discharged, the purge is relatively small. Compared to the gas (P), the discharge rate of the source gas (S) and the reaction gas (R) is reduced, so that the residence time may be increased. In FIG. 6B, although both the first exhaust hole 166 and the second exhaust hole 168 are formed to have the same size, the first exhaust hole 166 and the second exhaust hole 168 are illustrated in FIG. 6. It may be formed in different sizes as in 5.

In addition, the exhaust hole cap 200 shown in FIG. 6A and the exhaust hole cap 210 shown in FIG. 6B are simultaneously applied to the first exhaust hole 166 to determine the number and size of the exhaust holes. Of course, it can be adjusted at the same time.

Meanwhile, in FIGS. 5 and 6, the first exhaust hole 166 and the second exhaust hole 168 are the same distance from the edge of the support plate 122 of the substrate support part 120, that is, the center point of the first exhaust hole 166. And the distance between the center point of the support plate 122 and the center point of the second exhaust hole 168 and the center point of the support plate 122 are described as the same, the first exhaust hole 166 and the second exhaust hole 168 ) May form a different distance from the edge of the support plate 122, for example, the first exhaust hole 166 farther from the edge of the support plate 122 than the second exhaust hole 168 as shown in FIG. 4. have.

Although the present invention has been described in connection with certain exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. Therefore, the scope of the present invention should not be limited by the described embodiments, but should be defined by the appended claims and equivalents thereof.

100: chamber 120: space part
102: main body 104: through hole
106: exhaust port 120: substrate support
122: support plate 124: substrate mounting portion
126: rotation axis 130: gas spray
132: top lead 134: spray plate
136: gas injection hole 138: filling member
140: gas inlet 160: exhaust passage
162: bulkhead 164: baffle
166: first exhaust hole 168: second exhaust hole
170: exhaust pipe

Claims

A chamber in which a space part is formed;
A substrate support part rotatably installed in the chamber to support a plurality of substrates;
A gas injector provided above the substrate support to inject a process gas and a purge gas to the substrate support; And
An exhaust passage communicating with the space portion, the exhaust passage having a plurality of exhaust holes formed on one surface thereof for discharging the process gas and the purge gas;
Lt; / RTI >
The plurality of exhaust holes are divided into a plurality of first exhaust holes for discharging the process gas and a plurality of second exhaust holes for discharging the purge gas.
And at least one first exhaust hole of the plurality of first exhaust holes is located farther from a center of the substrate support than the plurality of second exhaust holes.

The method according to claim 1,
The size of the first exhaust hole and the second exhaust hole is the same,
And a distance between the center of the first exhaust hole and the center of the substrate support is longer than the distance between the center of the second exhaust hole and the center of the substrate support.

The method according to claim 1 or 2,
And at least one of the plurality of first exhaust holes, an exhaust hole cap having a through hole smaller than the size of the first exhaust hole is inserted therein.

A chamber in which a space part is formed;
A substrate support part rotatably installed in the chamber to support a plurality of substrates;
A gas injector provided above the substrate support to inject a process gas and a purge gas to the substrate support; And
An exhaust passage communicating with the space portion, the exhaust passage having a plurality of exhaust holes formed on one surface thereof for discharging the process gas and the purge gas;
Lt; / RTI >
The plurality of exhaust holes are divided into a plurality of first exhaust holes for discharging the process gas and a plurality of second exhaust holes for discharging the purge gas.
And at least one of the plurality of first exhaust holes is smaller than the plurality of second exhaust holes.

The method according to claim 1, 2 or 4,
And the exhaust passage is formed along a lower inner wall of the chamber, and an exhaust port communicating with the exhaust passage is formed at a bottom of the chamber.

The method according to claim 5,
And a filling member disposed between the gas sprayer and the chamber inner wall.

The method according to claim 1, 2 or 4,
And the exhaust passage is formed along an upper inner wall of the chamber, and an exhaust port communicating with the exhaust passage is formed in the upper portion of the chamber.

The method of claim 7,
And a filling member disposed between the substrate support and the chamber inner wall.

The method according to claim 1, 2 or 4,
One surface of the exhaust passage in which the plurality of exhaust holes are formed is divided into two parts based on the center in the width direction.
The plurality of first exhaust holes are formed on one outer surface of the bisected exhaust passage,
And the plurality of second exhaust holes are formed on one inner surface of the bisected exhaust passage.

The method according to claim 1, 2 or 4,
And the first exhaust hole is formed in a region corresponding to the injection region of the process gas, and the second exhaust hole is formed in a region where the purge gas is injected.

The method according to claim 1, 2 or 4,
And the number of the first exhaust holes is less than the number of the second exhaust holes.

The method according to claim 1, 2 or 4,
And an exhaust hole cap for closing the first exhaust hole in at least one of the plurality of first exhaust holes.