KR20130074413A - Substrate processing apparatus - Google Patents

Abstract

PURPOSE: A substrate processing apparatus is provided to stably perform a process by preventing byproducts due to the mixture of process gases. CONSTITUTION: A chamber (100) includes a main body (102) and a top lid (132) which is formed on the upper side of the main body. A space (110) is divided into a plurality of areas and is formed in the chamber. A substrate support unit (120) is installed in the chamber and supports a substrate. A gas spray unit (130) sprays process gases to the substrate support unit. The gas spray unit includes a plurality of gas spray units to spray the different kinds of gases.

Description

Substrate processing apparatus

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of suppressing generation of by-products caused by reaction between different gases.

As the degree of integration of semiconductor devices increases, design rules have been reduced to integrate more devices per unit area. Accordingly, there is a need for a deposition method capable of realizing thinner thin film deposition and excellent step coverage. Corresponding deposition methods include atomic layer deposition (ALD).

In general, the atomic layer deposition method is a method of separating and supplying each source gas to the substrate to form a thin film by the surface saturation of the source gases.

The principle of the atomic layer deposition method is briefly described as follows. When the first raw material gas is supplied into the chamber, the monoatomic layer is chemisorbed on the surface of the substrate through reaction with the surface of the substrate. However, when the surface of the substrate is saturated with the first raw material gas, the first raw material gases of the monoatomic layer or more do not form a chemisorption state due to non-reactivity between the same ligands, and are in a physical adsorption state. When the purge gas is supplied, the first source gases in the physically adsorbed state are removed by the purge gas. When the second raw material gas (reaction gas) is supplied on the first monolayer, the second layer grows through the substitution reaction between the ligands of the first raw material gas and the second raw material gas, and the second raw material gas that fails to react with the first layer They are in the state of physical adsorption and are removed by the purge gas. And the surface of this second layer is in a state capable of reacting with the first raw material gas. The above process forms one cycle and the thin film is deposited by repetition of several cycles.

Such a method is a time division atomic layer deposition method performed by sequentially supplying and discharging process gas and purge gas, such as source gas and reaction gas, to a substrate mounted in a chamber, in which one or more substrates are mounted. The thin film can be deposited by alternately and repeatedly supplying the process gas and the purge gas in a state where the substrate support is fixed.

On the other hand, when a plurality of substrates are mounted on the substrate support portion and the thin film is deposited while the substrate support portion is rotated, the thin film is deposited while simultaneously supplying the process gas and the purge gas. In this case, the gas injection bodies supplying the gas are formed so that the process gas and the purge gas are not mixed with each other so that the process gas and the purge gas are alternately supplied to the substrate.

When the substrate support is rotated as described above and the source gas, the reaction gas, and the purge gas are simultaneously supplied, each substrate alternately contacts the process gas and the purge gas, thereby forming a thin film on the substrate. The atomic layer deposition method is a space-division atomic layer deposition method, which allows a thin film to be deposited on a plurality of substrates while providing a relative rotation between the substrate support and the gas injector and simultaneously spraying the source gas and the reaction gas.

Here, in the time-division atomic layer deposition method as in the former, process gases such as source gas, reactant gas, and purge gas are sequentially supplied and discharged, so that source gas and reactant gas are mixed in the chamber or in the process of being exhausted. There is almost no.

However, in the latter space-division atomic layer deposition method, process gases such as source gas, reaction gas, and purge gas are simultaneously supplied through the gas injector, and are discharged through one exhaust passage and exhaust port, so that the chamber except the upper part of the substrate is used. Source gas and reaction gas are inevitably mixed inside or in the exhaust flow path and exhaust port. In particular, when the thin film is deposited at two or more cycles at a time, by-products are reacted with each other between the source gas and the reaction gas, as well as between the plural source gas and the reaction gas and the reaction gas in the chamber space or the exhaust flow path. It can't be avoided. The by-products thus formed are attached to the chamber or the exhaust passage to act as a pollutant, and in particular, there is a problem of degrading the quality of the thin film formed by being attached to the substrate during the deposition of the thin film. In addition, the by-products attached as described above are difficult to remove, requiring a lot of time and effort to remove them, and thus there is a problem in that process efficiency and productivity are lowered.

KR 0920324 B1

The present invention provides a substrate processing apparatus capable of preventing the generation of by-products due to mixing between process gases when the thin film is deposited in 1 turn 2 cycles in the space-division atomic layer deposition process.

The present invention provides a substrate processing apparatus capable of preventing the generation of by-products due to mixing between process gases when depositing three or more ternary thin films in a space-division atomic layer deposition process.

The present invention provides a substrate processing apparatus capable of depositing a thin film of excellent quality.

The present invention provides a substrate processing apparatus capable of improving process efficiency and productivity.

A substrate processing apparatus according to an embodiment of the present invention includes a first source gas region in which two source gas regions are supplied with a source gas supplied along a circumferential direction, and a reaction gas supplied in any one of these source gas regions. A chamber which separates a region, the source gas regions and the first reaction gas region, and is divided into a plurality of purge gas regions to which purge gas is supplied, and a plurality of exhaust ports are formed; A substrate support part rotatably installed in the chamber and having a plurality of substrates mounted thereon; A gas injector installed on an upper surface of the space part to face the substrate support part, the gas injector including a plurality of gas injection units sealing the space part and injecting the gas into the respective gas regions; A source gas exhaust passage and a plurality of source gas exhaust passages connected to any one of the plurality of exhaust ports, the exhaust holes being exhausted from the gas supplied to the corresponding regions at positions corresponding to the source gas regions and the first reaction gas region, respectively; And a gas exhaust unit in which a reaction gas exhaust passage communicating with the other one of the exhaust ports is annularly installed along the inner wall of the chamber.

The space part may further include a second reaction gas region in which the reaction gas is supplied in a purge gas region between the source gas region facing the first reaction gas region, and the gas spray body may include the second reaction gas. The apparatus may further include a gas injection unit for injecting reaction gas into a region corresponding to the region, and the reaction gas exhaust passage may further include an exhaust hole for exhausting the reaction gas in a portion corresponding to the second reaction gas region. .

Here, any one of the source gas exhaust passage or the reaction gas exhaust passage is a first exhaust passage formed along the lower inner wall of the chamber, and the other of the source gas exhaust passage or the reaction gas exhaust passage is the first exhaust passage. A second exhaust passage is formed adjacent to the flow passage, the first exhaust passage and the second exhaust passage may be connected to different exhaust ports. At this time, the first exhaust passage, the first partition wall formed to be spaced apart from the lower inner wall of the chamber; And a first baffle having a plurality of first exhaust holes and connecting the upper surface of the first partition wall to the lower inner wall of the chamber, wherein the second exhaust flow path is formed on the first partition wall. A second partition wall formed; And a second baffle formed with the plurality of second exhaust holes and connecting the upper surface of the second partition wall to the lower inner wall of the chamber.

Some of the plurality of second exhaust holes may be connected to the plurality of first exhaust holes through a first connecting pipe crossing the second exhaust passage, and the second exhaust passage may pass through the first baffle. It may be connected to the exhaust port via a second connecting pipe crossing the first exhaust passage.

In addition, the first exhaust passage, the first partition wall formed to be spaced apart from the lower inner wall of the chamber; And a first baffle having a plurality of first exhaust holes and connecting the upper surface of the first partition wall to the lower inner wall of the chamber, wherein the second exhaust flow path is spaced apart from the first partition wall. A second partition wall which is formed; A plurality of second exhaust holes are formed, and a second baffle connecting an upper portion of the second partition wall and an upper portion of the first partition wall, wherein the plurality of first exhaust holes and the plurality of second exhaust holes Groups may be formed in groups in directions not overlapping each other.

One of the source gas exhaust passage or the reactive gas exhaust passage is a first exhaust passage formed along the lower inner wall of the chamber, and the other of the source gas exhaust passage or the reactive gas exhaust passage is the first exhaust passage. The second exhaust passage is spaced apart along the upper inner wall of the chamber, the first exhaust passage and the second exhaust passage may be connected to different exhaust pipes.

A first partition wall formed to be spaced apart from a lower inner wall of the chamber; And a first baffle having a plurality of first exhaust holes and connecting the upper surface of the first partition wall to the lower inner wall of the chamber, wherein the second exhaust passage is spaced apart from the first baffle. A second partition wall formed to be spaced apart from the upper inner wall of the chamber; And a second baffle having a plurality of second exhaust holes and connecting the upper portion of the second partition wall and the upper inner wall of the chamber, wherein the plurality of first exhaust holes and the plurality of second exhaust holes are provided. Groups may be formed in groups in directions not overlapping each other.

The substrate treating apparatus according to the embodiment of the present invention may prevent a phenomenon in which different gases used for thin film deposition are mixed with each other in the process of being discharged to the outside of the chamber to generate a byproduct. For example, in the atomic layer deposition method using the space division method, when the 1 turn 2 cycle deposition or the deposition of the thin film of the ternary system or more, it is possible to prevent the generation of by-products due to mixing between process gases. As a result, the process can be stably performed, and a thin film of high quality can be deposited. In addition, the device can be kept clean, thereby reducing the cost and time required to maintain the device, and can also improve productivity.

1 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.
2 is a view conceptually showing the structure of an exhaust passage applied to the gas injection device of FIG.
3 is a view showing an example of an exhaust passage applied to the gas injection device of FIG.
4 is a cross-sectional view schematically showing a modified example of the exhaust passage applied to the substrate processing apparatus according to the embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

1 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1, a substrate processing apparatus according to an exemplary embodiment of the present invention includes a chamber 100, a substrate support part 120, a gas spray body 130, and a gas discharge unit.

The chamber 100 includes a main body 102 having an open upper portion, and a top lead 132 installed on the upper portion of the main body 102 to be opened and closed. When the top lid 132 is coupled to the upper portion of the main body 102 to close the inside of the main body 102, the space part 110 in which the processing for the substrate W is performed inside the chamber 100, for example, a deposition process. ) Is formed.

In this case, the space 110 inside the chamber 100 may be divided into a plurality of regions. For example, the space 110 may be divided into a source gas region, a reaction gas region, and a purge gas region. In addition, at least two source gas regions and a reaction gas region may be provided, and they are separated from each other by a purge gas region. For example, in the case of ternary deposition, the space 110 may include two source gas regions to which two different source gases are supplied, and a reaction gas region to which a reaction gas is supplied between any two source gas regions. And these gas regions are separated from each other by a purge gas region. In addition, in the case of 1 turn 2 cycle deposition, the space 110 may be formed with two source gas regions supplied with the same source gas and two reaction gas regions formed to face each other between the source gas regions. Such a structure may be classified according to the type of gas injected from the gas spray body 130 to be described later.

Since the space part 110 should generally be formed in a vacuum atmosphere, a gas discharge unit for discharging the gas existing in the space part 110 may be provided at a predetermined position of the chamber 100. In this case, the gas discharge unit includes a plurality of exhaust passages 162 and 172 formed along the inner edge of the chamber 100 and a plurality of exhaust ports 105 and 106 in communication with the respective exhaust passages 162 and 172. The plurality of exhaust passages 162 and 172 are independently connected to a plurality of exhaust pipes 150 and 152 connected to an external pump (not shown) through the exhaust ports 105 and 106. The exhaust passages 162 and 172 may be formed using the inner wall of the chamber 100, for example, sidewalls and a bottom surface, as shown in FIG. 1, or may be formed using a hollow pipe or the like. When the exhaust passages 162 and 172 are formed using the inner wall of the chamber 100, the exhaust passages 162 and 172 are partition walls 160 and 170 spaced apart from the inner sidewall of the chamber 100 and the partition walls. It may be formed by the baffles 164 and 174 connecting the 160 and 170 and the inner sidewall of the chamber 100. Here, for convenience of description, the partition walls 160 and 170 and the baffles 164 and 174 are described as being separated, but the partition walls 160 and 170 and the baffles 164 and 174 are usually formed integrally. A plurality of exhaust holes 166 and 176 are formed in the baffles 164 and 174 to suck air or by-products remaining when the air or the thin film is deposited in the space 110 to exhaust the exhaust ports through the exhaust passages 162 and 172. Discharge to the exhaust pipe (150, 152) connected to 105, 106. The exhaust holes 166 and 176 are formed at positions corresponding to the above-described source gas region and the reaction gas region, respectively, and the exhaust holes 166 and 176 are exhaust passages 162 for exhausting the source gas and the reaction gas. 176, respectively. In the embodiment of the present invention, a gas discharge unit including a plurality of exhaust passages 162 and 172 is formed to suppress mixing of different gases. In this case, each of the exhaust passages 162 and 172 is preferably formed to discharge the same gas. For example, when two kinds of source gases are used for ternary thin film deposition, each of the source gases is different from each other. To be discharged through The specific structure of the gas discharge unit formed as described above will be described again in the following embodiments.

In addition, a through hole 104 into which the rotating shaft 126 of the substrate support part 120 to be described later is inserted is formed at the bottom surface of the chamber 100. Gate valves (not shown) are formed on sidewalls of the main body 102 to carry the substrate W into or out of the chamber 100.

The substrate support unit 120 is a structure for supporting the substrate W, and includes a support plate 122 and a rotation shaft 126. The support plate 122 is provided in a horizontal direction inside the chamber 100 in a disc shape, and the rotation shaft 126 is vertically connected to the bottom of the support plate 122. The rotating shaft 126 is connected to a driving means (not shown) such as a motor outside the through hole 104 to lift and rotate the support plate 122. At this time, by sealing the space between the rotating shaft 126 and the through hole 104 by using a bellows (not shown) to prevent the vacuum in the chamber 100 is released in the process of depositing a thin film.

In addition, a plurality of substrate seating portions 124 is formed at a predetermined interval on the support plate 122. The substrate mounting portion 124 may be formed in a recessed shape so as to prevent the detachment of the mounted substrate W during the rotation of the support plate 122 for thin film deposition. In addition, a heater (not shown) may be provided below or inside the support plate 122 to heat the substrate W to a constant process temperature.

The gas injector 130 is provided to be spaced apart from the upper portion of the substrate support 120, and injects a process gas such as source gas S, a reaction gas R, and a purge gas P toward the substrate support 120.

The gas injection body 130 includes a plurality of gas injection units for injecting different types of gas, and each gas injection unit has a shape similar to a fan shape and is arranged based on the center point of the support plate 122. The arrangement of the gas injection unit corresponds to the source gas region, the reaction gas region and the purge gas region of the space 110.

In addition, each gas injection unit shares the top lead 132 in a form occupying a portion of the top lead 132, the injection plate formed with a plurality of gas injection holes 136 under the top lead 132 ( 134 is combined. The gas injection unit formed in this way forms a gas diffusion space C between the injection plate 134 and the top lead 132.

In addition, the gas inlet 140 is formed in the top lead 132 in a number corresponding to the number of gas injection units to communicate with the gas diffusion space C between the top lead 132 and the injection plate 134. Each gas inlet 140 is selectively connected to various external gas supply sources (not shown).

Here, an example in which the injection plate 134 occupies a portion of the top lid 132 and is combined to form a gas injection unit is described, but a plurality of gas injection units may be formed separately. In addition, the gas injection units may further include a central gas injection unit 138 for injecting purge gas to prevent the source gas and the reaction gas from being mixed at the center of the substrate support unit 120.

In addition, an intermediate plate (not shown) having an injection hole (not shown) may be interposed between the top lead 132 and the injection plate 134. In this case, the gas introduced into the gas injection unit through the gas inlet 140 may be evenly spread in the gas diffusion space formed between the top lead 132 and the intermediate plate and between the intermediate plate and the injection plate 134. . That is, the process gas introduced through the gas inlet 140 must be completely diffused in the gas diffusion space C and then supplied to the substrate W so that the process gas can be supplied evenly over the entire area of the substrate W. have. By interposing the intermediate plate between the top lead 132 and the injection plate 134, the gas supplied from the gas inlet 140 is first diffused between the intermediate plate and the top lead 132 and then to the intermediate plate It is discharged through the formed injection hole, and then secondly diffused between the intermediate plate and the injection plate 134 to be supplied to the substrate (W). The process gas may be completely diffused in the gas diffusion space C through two diffusion processes and may be evenly sprayed on the entire area of the substrate W. FIG.

The substrate processing apparatus configured as described above is continuously supplied with the raw material gas (S), the reaction gas (R) and the purge gas (P) through the gas injector 130 in the process of depositing a thin film, Residual gas and by-products are discharged to the exhaust pipes 150 and 152 through the gas discharge unit.

As mentioned above, in the embodiment of the present invention, the source gas S and the reaction gas R are discharged by discharging the source gas S and the reaction gas R using a plurality of exhaust passages in forming the gas discharge unit. ) To prevent them from mixing with each other. This can suppress the generation of by-products due to the mixing of the source gas (S) and the reaction gas (R). On the other hand, since the purge gas P uses an inert gas such as argon (Ar) that does not generally react with other gases, the purge gas P may be discharged through an adjacent exhaust passage.

2 is a view conceptually showing a structure of a gas discharge unit according to an exemplary embodiment of the present invention, where G denotes a distribution region of gas injected through the gas injection body 130.

The gas discharge unit sucks the gas including the raw material gas S and discharges the first exhaust passage 162 for discharging the gas including the source gas S to the first exhaust pipe 150 and the second exhaust pipe by sucking the gas including the reaction gas R. And a second exhaust passage 172 for discharging to 152. In the drawing, the gas discharge unit is formed to include two exhaust passages through which the source gas S and the reaction gas R are discharged. However, when the source gas S is a different type, another exhaust passage ( It may be discharged through (not shown). In this case, the respective exhaust passages for discharging different source gases S are formed to communicate with the same exhaust port. However, when different kinds of reaction gases R are used, they are discharged through the same exhaust passage.

The first exhaust passage 162 and the second exhaust passage 172 may be formed to be adjacent to each other at the lower portion of the inside of the chamber, or may be formed spaced apart from each other in the vertical direction. The first exhaust passage 162 and the second exhaust passage 172 formed as described above are formed to discharge different kinds of gases, and for convenience, the first exhaust passage 162 may provide the source gas S. The second exhaust passage 172 will be described as sucking and discharging the reaction gas R. In addition, the number of the first exhaust passages 162 may increase, for example, in 1 turn 2 cycle deposition or ternary thin film deposition, depending on the type of source gas S. FIG.

Hereinafter, a specific structure of the gas discharge unit according to the embodiment of the present invention will be described.

3 is a view showing the structure of a gas discharge unit according to an embodiment of the present invention, will be described in connection with FIG.

Referring to FIG. 3, the gas discharge unit is formed by stacking the first exhaust passage 162 and the second exhaust passage 172 in the vertical direction. That is, the first exhaust passage 162 is formed in the lower portion of the chamber 100, and the second exhaust passage 172 is formed in the upper portion of the first exhaust passage 162.

The first exhaust passage 162 is a first baffle 160 formed spaced apart from the lower inner wall of the chamber 100 and a first baffle connecting the first partition 160 and the lower inner wall of the chamber 100 ( 164). In this case, a plurality of first exhaust holes 166 are formed in the first baffle 164. In addition, the second exhaust passage 172 may include a second baffle 174 connecting the second partition 170 formed on the first partition 162 and the upper portion of the second partition 170 to the lower inner wall of the chamber 100. Is formed by In this case, a plurality of second exhaust holes 176 are also formed in the second baffle 174. In the gas discharge unit formed as described above, since the second exhaust passage 172 provided on the upper side is not in communication with the exhaust port 106, the gas sucked inside, for example, the reaction gas R, is transferred to the bottom of the chamber 100. It cannot be discharged to the second exhaust pipe 152 connected to the exhaust port 106 of the. In addition, the gas, for example, the source gas S is not sucked through the first exhaust passage 162 provided on the lower side. That is, the first exhaust passage 162 and the second exhaust passage 172 are blocked by each other by the first baffle 164.

Therefore, in the embodiment of the present invention, as shown in (a) of FIG. 3, the source gas S and the reaction gas R are injected into the second baffle 174 constituting the second exhaust passage 172. A plurality of second exhaust holes 176 are formed in a portion corresponding to the portion of the plurality of second exhaust holes 176 by using the first connecting pipe 168 that crosses the second exhaust passage 172. It is connected to the first exhaust hole (166). In addition, the second exhaust passage 172 passes through the first baffle 164 and uses the second connecting pipe 178 crossing the first exhaust passage 162 through the exhaust port 106 to the second exhaust pipe 152. Connect to Although the first bulkhead 160, the first baffle 164, and the second bulkhead 170 and the second baffle 174 are described in a separated state from each other, the first bulkhead 160, the first baffle 164, and the second baffle 164 may be formed in an integral shape having a 'b' shape. have.

Such a configuration can be understood in detail through (b) and (c) of FIG. 3 showing cross-sectional structures along lines A-A and B-B shown in FIG.

Referring to FIG. 3B, the gas including the raw material gas S is sucked into the second exhaust hole 176 formed in the second exhaust passage 172, and then passes through the first connecting pipe 168. The exhaust pipe 162 is discharged to the first exhaust pipe 150.

3 (c), the gas including the reaction gas R is discharged into the second exhaust passage 172 through the second exhaust hole 176 to be discharged through the second connection pipe 178. The exhaust pipe 152 is discharged.

Through such a configuration, since the raw material gas S and the reaction gas R are discharged through the exhaust port with little mixing in the exhaust passage, it is possible to suppress a phenomenon in which the by-products are generated in the exhaust passage.

4 is a cross-sectional view showing a modification of the gas discharge unit according to the present invention.

The gas discharge unit described herein may be formed in almost the same manner as the gas discharge unit shown in FIG.

Referring to FIG. 4A, the gas discharge unit includes a first exhaust passage 260 formed along a lower edge of the inside of the chamber 100, and a second exhaust passage formed inside the first exhaust passage 260. 270. At this time, since the first exhaust passage 260 and the second exhaust passage 270 are formed in a horizontal direction, the first exhaust passage 260 and the second exhaust passage 270 are located at the same height. Process gas for inhaling the first exhaust hole (not shown) formed in the first exhaust passage 260 and the second exhaust hole (not shown) formed in the second exhaust passage 270 is injected through the corresponding exhaust passage. It is preferable to form each in the area | region which becomes. That is, the first exhaust hole and the second exhaust hole are arranged to form a group in a direction that does not overlap each other. In such a case, since the distance from the edge of the support plate 122 is different from the first exhaust passage 260 and the second exhaust passage 270, the source gas S discharged through the first exhaust passage 260. ) And the rate of discharge of the reaction gas R discharged through the second exhaust passage 270 may occur. In order to solve this problem, the size of the first exhaust hole and the second exhaust hole formed in the first exhaust passage 260 and the second exhaust passage 270, the spacing and the position or the like is injected through the gas injection unit You can also adjust the amount of gas.

Referring to FIG. 4B, the gas discharge unit is spaced apart from the first exhaust passage 460 and the first exhaust passage 460 formed along the lower edge of the chamber 100, and thus, inside the chamber 100. The second exhaust passage 470 is formed along the upper edge of the. Here, unlike the other gas discharge unit described above, the first exhaust passage 460 and the second exhaust passage 470 is formed spaced apart from the upper and lower inside the chamber 100. In this case, a second exhaust pipe 152 may be formed in the top lead 132 to discharge the process gas discharged to the second exhaust passage 470 formed in the upper portion of the chamber 100 to the outside.

In addition, since the first exhaust passage 460 and the second exhaust passage 470 are formed apart from each other, the first exhaust passage 460 and the second exhaust passage 470 so that the process gas can be uniformly discharged through them. It is necessary to properly adjust the separation distance. In this case, the separation distance between the first exhaust passage 460 and the second exhaust passage 470 may be adjusted based on the upper surface of the support plate 122 on which the substrate W is seated.

Exhaust holes formed in the first exhaust passage 460 and the second exhaust passage 470 are formed in a group in a direction not overlapping with each other as in FIG. 4A to form different types of process gases. Allow for discharge.

Although the present invention has been described in connection with certain exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. Therefore, the scope of the present invention should not be limited by the described embodiments, but should be defined by the appended claims and equivalents thereof.

100: chamber 120: space part
102: main body 104: through hole
105, 106: exhaust port 120: substrate support
130: gas injection body 132: top lid
143: injection plate 136: gas injection hole
140: gas inlet 122: support plate
124: substrate mounting portion 126: rotation axis
150: first exhaust pipe 152: second exhaust pipe
160 first bulkhead 162, 260, 360, 460: first exhaust flow path
164: first baffle 166: first exhaust hole
168: first connector 170: second bulkhead
172, 270, 370, 470: second exhaust flow path 174: second baffle
176: second exhaust hole 178: second connector

Claims (8)

Two source gas regions in which source gas is supplied along the circumferential direction therein, and a first reaction gas region in which one of the source gas regions is supplied, and reactant gas is supplied, and the source gas regions and the first reaction A chamber in which gas spaces are separated from each other, and a space portion is formed which is divided into a plurality of purge gas regions to which purge gas is supplied, and a plurality of exhaust ports are formed;
A substrate support part rotatably installed in the chamber and having a plurality of substrates mounted thereon;
A gas injector installed on an upper surface of the space part to face the substrate support part, the gas injector including a plurality of gas injection units sealing the space part and injecting the gas into the respective gas regions;
A source gas exhaust passage and a plurality of source gas exhaust passages connected to any one of the plurality of exhaust ports, the exhaust holes being exhausted from the gas supplied to the corresponding regions at positions corresponding to the source gas regions and the first reaction gas region, respectively; A gas discharge unit having a reaction gas exhaust passage communicating with the other of the exhaust ports in an annular shape along the inner wall of the chamber;
And the substrate processing apparatus. The method according to claim 1,
The space portion further includes a second reaction gas region in which the reaction gas is supplied in a purge gas region between the source gas region facing the first reaction gas region,
The gas injection body further includes a gas injection unit for injecting a reaction gas into a region corresponding to the second reaction gas region,
And the reaction gas exhaust passage further comprises an exhaust hole for exhausting the reaction gas in a portion corresponding to the second reaction gas region. The method according to claim 1 or 2,
Either of the source gas exhaust passage or the reaction gas exhaust passage is a first exhaust passage formed along the lower inner wall of the chamber,
The other one of the source gas exhaust passage or the reaction gas exhaust passage is a second exhaust passage formed adjacent to the first exhaust passage,
And the first exhaust passage and the second exhaust passage are connected to different exhaust ports. The method according to claim 3,
The first exhaust passage,
A first partition wall spaced apart from the lower inner wall of the chamber; And
A plurality of first exhaust holes are formed, and a first baffle connecting the upper surface of the first partition wall to the lower inner wall of the chamber;
The second exhaust passage,
A second partition formed on the first partition; And
And a second baffle formed with the plurality of second exhaust holes and connecting the upper surface of the second partition wall to the lower inner wall of the chamber. The method of claim 4,
Some of the plurality of second exhaust holes are connected to the plurality of first exhaust holes through first connecting pipes that cross the second exhaust passages.
And the second exhaust passage is connected to the exhaust port through a second connecting pipe passing through the first baffle and crossing the first exhaust passage. The method according to claim 3,
The first exhaust passage,
A first partition wall spaced apart from the lower inner wall of the chamber; And
A plurality of first exhaust holes are formed, and a first baffle connecting the upper surface of the first partition wall to the lower inner wall of the chamber;
The second exhaust passage,
A second partition formed to be spaced apart from the first partition;
And a second baffle having a plurality of second exhaust holes formed thereon and connecting an upper portion of the second partition wall to an upper portion of the first partition wall.
And the plurality of first exhaust holes and the plurality of second exhaust holes are formed in groups in directions not overlapping each other. The method according to claim 1,
Either of the source gas exhaust passage or the reaction gas exhaust passage is a first exhaust passage formed along the lower inner wall of the chamber,
The other one of the source gas exhaust passage or the reaction gas exhaust passage is a second exhaust passage formed along the upper inner wall of the chamber spaced apart from the first exhaust passage,
And the first exhaust passage and the second exhaust passage are connected to different exhaust pipes. The method of claim 7,
The first exhaust passage,
A first partition wall spaced apart from the lower inner wall of the chamber; And
A plurality of first exhaust holes are formed, and a first baffle connecting the upper surface of the first partition wall to the lower inner wall of the chamber;
The second exhaust passage,
A second partition wall spaced apart from the first baffle and spaced apart from an upper inner wall of the chamber; And
And a second baffle having a plurality of second exhaust holes formed thereon and connecting the upper portion of the second partition wall to the upper inner wall of the chamber.
And the plurality of first exhaust holes and the plurality of second exhaust holes are formed in groups in directions not overlapping each other.

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