KR100972112B1 - Batch type semiconductor manufacturing apparatus - Google Patents

Abstract

The present invention relates to a batch type semiconductor manufacturing apparatus capable of depositing a plurality of semiconductor substrates in one chamber.
The present invention provides a batch type semiconductor manufacturing apparatus capable of collectively processing a plurality of semiconductor substrates, having a small portion exposed in the chamber, reducing the remaining time of gas and suppressing the generation of impurities. To this end, a batch type semiconductor manufacturing apparatus according to an embodiment of the present invention is a batch type semiconductor manufacturing apparatus for collectively processing a plurality of semiconductor substrates, a chamber accommodating a plurality of semiconductor substrates, and a gas supplying gas into the chamber. A plurality of injectors for supporting a plurality of semiconductor substrates; a semiconductor substrate support for supporting the plurality of semiconductor substrates; a plurality of injectors supported on a wall of the chamber for injecting gas into the semiconductor substrate; At least one injector including a gas supply line, each of the plurality of semiconductor substrates extending to correspond to the number of gases, corresponding to the injector, and sprayed onto the plurality of semiconductor substrates by a valve provided adjacent to the injector. The gas being controlled is individually controlled.

Description

Batch Type Semiconductor Manufacturing Equipment {BATCH TYPE SEMICONDUCTOR MANUFACTURING APPARATUS}

The present invention relates to a batch type semiconductor manufacturing apparatus capable of depositing a plurality of semiconductor substrates in one chamber.

When the TiN thin film is deposited in a general chemical vapor deposition (CVD) process, TiCl ₄ gas used as the source gas of Ti and NH ₃ gas used as the source gas of N are simultaneously flowed. In the case of ALD (Atomic Layer Deposition) process, TiCl ₄ is flowed first, followed by purging the unreacted TiCl ₄ gas inside the reactor with Ar or N ₂ , flowing NH ₃ gas, and finally, Ar or N ₂ . In purifying the reaction NH ₃ gas and the reaction by-product, this one cycle process is repeated to form a TiN film of the target thickness.

The gases are flowed by an injector or shower head in the chamber where this CVD or ALD process takes place. The injector, which has been used in a single wafer chamber, is designed to be introduced into the chamber without mixing the two gases. The injector is exposed to the chamber for uniformity of thin film properties including the thickness of the deposited thin film. The part of the injector that is being drilled is circular. Unlike the method of controlling gas introduction by laminar flow, the injector method injects gas from the upper part of the chamber to spread the gas evenly over the front surface of the substrate, thereby obtaining a short step time and a uniform thin film. Could. However, due to the disadvantage that such a single wafer chamber is not capable of depositing a large number of semiconductor substrates per hour, a batch type semiconductor manufacturing apparatus has recently been developed to increase productivity by collectively processing a plurality of semiconductor substrates.

Fig. 14 shows a shower head used in a conventional batch type semiconductor manufacturing apparatus. Gas A and gas B to be introduced into the chamber are introduced into and mixed with the main gas injection pipe 107 through separate gas injection pipes 106a and 106b. The reaction gas introduced and mixed into the main gas injection pipe 107 is injected into the process chamber by the shower head 105 connected to the main gas injection pipe 107 and mounted in the chamber. The injected mixed reaction gas is supplied to the semiconductor substrate 103 located on the substrate support 104 in the chamber.

Due to the large exposed area of the shower head in the chamber, such a device needs to be purged by injecting purge gas between each gas injection step to remove residual gas, and it is difficult to control the reaction gas individually. have. That is, since the exposed surface area of the shower head inside the chamber is considerably larger than that of the injector, the shower head is more likely to retain gas or adsorb to the surface than the injector. Therefore, when using the shower head, the amount and the injection time of the purge gas injected between each gas injection step to remove such gas are larger and longer than when using the injector. After all, using a showerhead reduces the number of wafers produced per unit time. In addition, when sufficient purification of the remaining gas is not performed, impurities due to the reaction between the remaining gases act as particles, which may lead to a problem that the quality of the thin film is deteriorated and the quality of the product is deteriorated.

SUMMARY OF THE INVENTION The present invention provides a batch type semiconductor manufacturing apparatus capable of collectively processing a plurality of semiconductor substrates and spraying while reducing the gas exposure portion in the chamber so that the reaction gas uniformly reaches the entire surface of the plurality of semiconductor substrates.

The present invention provides a batch type semiconductor manufacturing apparatus which reduces the remaining time of gas and suppresses the generation of impurities.

A batch type semiconductor manufacturing apparatus according to an embodiment of the present invention is a batch type semiconductor manufacturing apparatus for batch-processing a plurality of semiconductor substrates, the chamber containing a plurality of semiconductor substrates, a gas supply source for supplying gas into the chamber, A semiconductor substrate support for supporting the plurality of semiconductor substrates, a plurality of injectors supported on a wall of the chamber, for injecting gas into the semiconductor substrate, and a plurality of gas supply lines connecting the gas supply source and the plurality of injectors Each of the plurality of semiconductor substrates is provided so as to correspond to at least one of the injector, which extends according to the number of gases, and the gas injected to the plurality of semiconductor substrates by a valve provided adjacent to the injector Are individually controlled.

In the batch type semiconductor manufacturing apparatus of the present invention according to the above-described configuration, it is possible to secure optimum process conditions to deposit a thin film of excellent film quality and to improve process progress speed. By mounting the injector on the wall of the chamber to reduce the area exposed in the chamber, the problem with the shower head can be solved. A plurality of reaction gases can be precisely controlled independently and easily to obtain a thin film having desired characteristics. This precise and independent control of gas supply can also facilitate the ALD process.

In particular, when the valve is installed near the injector to open and close the gas, the flow path is shortened when opening and closing the valve, and the flow rate is easily controlled. Can be. Various types of chamber cover and partition wall considering the uniformity of thin films deposited on semiconductor substrates reduce unnecessary space in the chamber, reduce interference between introduced reaction gases and improve independence between substrates. To increase productivity.

1 is a perspective view showing a portion of a chamber of a batch type semiconductor manufacturing apparatus according to the present invention;
FIG. 2 is a perspective view of a portion of a chamber of a batch type semiconductor manufacturing apparatus in which gas is supplied to the chamber by a sub supply line branching from the main supply line with a device similar to FIG. 1; FIG.
3 and 4 show a case in which the pneumatic valve for opening and closing the gas inlet and outlet in the apparatus shown in FIG. 2 is attached to the main gas supply line and the sub gas supply line, respectively.
5 is a cross-sectional view of the chamber of the batch-type semiconductor manufacturing apparatus in which the injector is mounted on the upper wall of the chamber.
6-9 are cross-sectional views of a chamber lid of a batch type semiconductor manufacturing apparatus, wherein the chamber lid includes recesses that are hemispherical, cylindrical, conical, and truncated conical, respectively.
Fig. 10 is a sectional view of a chamber of the batch type semiconductor manufacturing apparatus in which each semiconductor substrate in the chamber is separated by a partition wall.
Fig. 11 is a sectional view showing that a partition wall in a chamber is installed on an upper wall.
12 is a cross-sectional view showing that a partition wall in a chamber is installed on a bottom wall.
Fig. 13 is a sectional view of the chamber of the batch-type semiconductor manufacturing apparatus in which the injector is mounted on the side wall of the chamber.
14 is a view showing a shower head of a conventional batch type semiconductor manufacturing apparatus.

1 is a perspective view showing a portion of a chamber of a batch type semiconductor manufacturing apparatus according to the present invention. The apparatus of the present invention shown in FIG. 1 includes a chamber 1 containing a plurality of semiconductor substrates 3 (although only one is shown), and gas sources 2a and 2b for supplying gas into the chamber 1; And a semiconductor substrate support 4 for supporting the semiconductor substrate 3, an injector 5 supported on the wall of the chamber 1, and a plurality of gas supply sources 2a and 2b and the injector 5. Eight gas supply lines 6 and gas outlets not shown are included. A substrate support for supporting a semiconductor substrate may support one substrate on an individual substrate support, and may also be designed to support a plurality of substrates on one wide substrate support. Gas supply source can supply reactant gas, carrier gas, purge gas, etc. according to each process.The number and characteristics are determined according to the thin film to be deposited and gas cylinder, valve, gas sensor, flow controller, controller, etc. to supply gas smoothly. It includes. In Fig. 1, two kinds of source gas and purge gas are supplied to the chamber 1 via four gas supply lines 6, respectively, from the gas supply source 2a and the gas supply source 2b. . A pair of injectors 5 for injecting the source gas and the purge gas, respectively, are arranged facing the semiconductor substrate 3 at the center of each semiconductor substrate 3, as shown in FIG. By the above configuration, thin films can be collectively deposited on the plurality of semiconductor substrates 3 in one chamber 1. Although FIG. 1 illustrates a case in which two supply gases are used as an example, when one type of thin film is deposited as in the case of Si deposition, only one SiH ₄ gas flows. The feed gas may be three or more in addition. Therefore, the number of gases to be introduced is determined according to the material to be deposited, and the number and arrangement of injectors disposed per semiconductor substrate are determined by the number of introduced gases.

2 shows a semiconductor substrate 3 in which one end of each of the gas supply source 2a and the gas supply source 2b is connected to one main supply line 8, and disposed in the chamber 1 at the other end of the main supply line. ) Is a batch type semiconductor manufacturing apparatus, which is branched to the sub supply line 9 and supplied with gas to the chamber 1. A plurality of branched sub supply lines 9 are connected to the plurality of injectors 5 to supply gas into the chamber 1.

A valve 10, preferably a pneumatic valve, capable of opening and closing the gas inlet to the gas supply line 6, the main supply line 8, or the sub supply line 9 to control gas introduction more precisely. Can be mounted. As shown in Fig. 3, when the valve 10 is mounted on the main supply line 8, the number of valves can be reduced, thereby reducing the cost. However, in this case, when the opening and closing of the valve 10 is long, the flow rate is difficult to control, and a line in which residual gas is present may be long, and a loss of the process may occur when the gas flows backward. Thus, to solve this problem, as shown in Fig. 4, a valve 10 can be mounted to the sub supply line 8 near the injector. In addition, with a gas valve, a flow controller, not shown, can be mounted to more precisely control the introduction of gas into the chamber.

6 to 9 show a cross section of the chamber of the semiconductor manufacturing apparatus in which one injector 5 is attached to the chamber lids 71, 72, 73, 74 at the top of the chamber to flow gas at the top of the semiconductor substrate. . The chamber inward surfaces of the chamber lids 71, 72, 73, 74 are formed with recesses such as hemispherical shape of FIG. 6, cylindrical shape of FIG. 7, cone shape of FIG. 8, or truncated cone shape of FIG. 9, and an injector at the bottom thereof. 5) is installed. Such concave portions can reduce space in the chamber which is unnecessary for the deposition process, and can prevent gas interference between adjacent semiconductor substrates to ensure uniformity of the thin film formed on the substrate and independence between the substrates.

10 to 12 show a cross section of a semiconductor manufacturing apparatus provided with partition walls between semiconductor substrates. Partition walls are provided in whole or in part between the semiconductor substrate and the substrate. That is, as shown in FIG. 10, the semiconductor substrate and the substrate may be separated as a whole, and as shown in FIGS. 11 and 12, barrier ribs may be installed at the top or the bottom of the chamber to separate the substrates. The installation of the barrier ribs may prevent interference between reactant gases injected to adjacent substrates, thereby preventing thin film nonuniformity generated in the substrate edge region and ensuring independence between the substrates.

As described above, the method of flowing the gas from the upper portion of the semiconductor substrate by attaching the injector 5 to the chamber has been described. However, as shown in FIG. 13, the injector 5 is formed on the sidewall of the chamber 1. This may also apply if 5) is installed.

1: chamber
2a, 2b: gas source
3: semiconductor substrate
4: semiconductor substrate support
5: injector
6: gas supply line
8: main supply line
9: department supply line
10, 20: pneumatic valve
71, 72, 73, 74: chamber cover
103: semiconductor substrate
104: substrate support
105: shower head
106a, 106b: gas injection pipe
107: main gas injection pipe

Claims (10)

A semiconductor manufacturing apparatus for collectively processing a plurality of semiconductor substrates,
Chamber,
A gas supply source supplying gas into the chamber;
A semiconductor substrate support portion for supporting the plurality of semiconductor substrates;
A plurality of injectors supported on a wall of the chamber for injecting gas into the semiconductor substrate;
A plurality of gas supply lines connecting the gas supply source and the plurality of injectors,
Each of the semiconductor substrates is provided to correspond to the plurality of injectors, and the gas supply line includes a main supply line connected to the gas supply source and a sub supply line connected to the plurality of injectors, respectively.
And the sub supply line is branched from the main supply line according to the number of the plurality of semiconductor substrates. The method according to claim 1,
And a valve which is provided in the main supply line and opens and closes the inlet of the gas. The method according to claim 2,
And a valve which is provided at each of the sub supply lines to open and close the inlet of the gas. The method according to claim 1,
And a valve which is provided at each of the sub supply lines to open and close the inlet of the gas. The method according to claim 1,
And a recess in which the plurality of injectors is mounted is formed in a wall of the chamber. The method according to claim 5,
The concave portion is a semiconductor manufacturing apparatus, characterized in that hemispherical, cylindrical, conical or truncated cone. The method of claim 6,
And the injector is mounted to an upper wall of the chamber. The method according to claim 1,
And the injector injects gas from the side of the semiconductor substrate. The method according to claim 8,
And the injector is mounted to a side wall of the chamber. delete

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