KR101789021B1 - Thin film deposition apparatus - Google Patents

Thin film deposition apparatus Download PDF

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KR101789021B1
KR101789021B1 KR1020160011229A KR20160011229A KR101789021B1 KR 101789021 B1 KR101789021 B1 KR 101789021B1 KR 1020160011229 A KR1020160011229 A KR 1020160011229A KR 20160011229 A KR20160011229 A KR 20160011229A KR 101789021 B1 KR101789021 B1 KR 101789021B1
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South Korea
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gas
supply
region
supplied
process gas
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KR1020160011229A
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Korean (ko)
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KR20170090639A (en
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서경천
정우영
조상우
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주식회사 테스
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/54—Providing fillings in containers, e.g. gas fillings

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention relates to a thin film deposition apparatus. A thin film deposition apparatus according to the present invention includes a chamber for providing a processing space in which a substrate is processed, a first supply region provided in the processing space for supplying a process gas toward a first region corresponding to a central portion of the substrate, And a second supply region for supplying a process gas toward a second region corresponding to an outer region of the center portion of the showerhead, a first process gas supply portion for supplying the process gas to the first supply region, And a second process gas supply unit for supplying the process gas to the second supply region separately from the process gas supply unit.

Description

[0001] The present invention relates to a thin film deposition apparatus,

The present invention relates to a thin film deposition apparatus.

(CVD), plasma enhanced chemical vapor deposition (PECVD), and atomic layer deposition (MOCVD) as a deposition method for forming a thin film on a substrate such as a semiconductor wafer A technique such as ALD (atomic layer deposition) is used.

9 is a schematic diagram showing the basic concept of the atomic layer deposition method in the substrate deposition method. 9, in the atomic layer deposition method, a raw material gas containing a raw material such as trimethyl aluminum (TMA) is sprayed on a substrate, an inert purge gas such as argon (Ar) is sprayed to form a residual gas and an unreacted material Is evacuated to adsorb a single molecular layer on the substrate. Then, a reactive gas including a reactant such as ozone (O 3 ) reacting with the raw material is injected, and an inert purge gas is injected to discharge unreacted gas and by-products to form a single atomic layer (Al-O) on the substrate do.

However, the conventional thin film deposition apparatus for forming a thin film by atomic layer deposition has a gas supply unit for supplying a process gas to a chamber for providing a space for mounting a substrate. In this case, the process gas must be uniformly supplied along the central portion and the edge of the substrate, but in reality, the process gas is not uniformly supplied and is often supplied unevenly. Therefore, the thickness of the thin film can not be maintained uniformly along the central portion and the edge of the substrate, and the quality of the thin film may be deteriorated.

Further, in the case where the thickness of the thin film at the center and the edge of the substrate is to be adjusted differently according to the change request of the process condition or the thickness of a part of the edge of the substrate is uneven due to the defects of the thin film, And the like.

It is an object of the present invention to provide a gas supply unit capable of individually supplying a process gas to a central portion and an edge of a substrate inside a chamber when supplying process gas.

According to another aspect of the present invention, there is provided a plasma processing apparatus comprising: a chamber for providing a processing space in which a substrate is processed; a first supply region provided in the processing space for supplying a process gas toward a first region corresponding to a central portion of the substrate; A showerhead having a second supply region for supplying a process gas toward a second region corresponding to an outer region of the central portion of the substrate, a first process gas supply portion for supplying the process gas to the first supply region, And a second process gas supply unit for supplying the process gas to the second supply region separately from the one process gas supply unit.

Here, the showerhead may include a housing that provides the first supply region and the second supply region therein, and the shower head may be provided with a nozzle for spraying a process gas supplied from the first supply region and the second supply region, Holes are formed.

The housing further includes a partition plate that divides the space between the injection plate and the injection plate into the first supply region and the second supply region.

Here, the partition plate is partitioned into the first supply region and the second supply region by a partition wall formed on the upper portion of the injection plate and protruding with a predetermined length.

The first process gas supply unit intermittently supplies the source gas toward the substrate according to a cycle for depositing a thin film on the substrate, and continuously supplies the reaction gas and the purge gas toward the substrate regardless of the cycle .

Further, the second process gas supply unit intermittently supplies the source gas toward the substrate according to a cycle of depositing a thin film on the substrate, and continuously supplies the reaction gas toward the substrate regardless of the cycle.

At this time, at least one of the time and the supply amount of the raw material gas or the purge gas is changed by the second process gas supply unit toward the substrate.

A gas supply module for supplying the process gas supplied from the first process gas supply unit to the first supply region and further supplying the process gas supplied from the second process gas supply unit to the second supply region, .

The first purge gas supply passage is connected to the first supply port through a purge gas or a reaction gas supplied to the first supply region. The purge gas supplied from the first purge supply passage is mixed with the source gas and mixed A mixing zone in which a gas is formed and a first material supply passage through which the material gas supplied to the first supply region is supplied, wherein the gas supply module is connected to the first material supply passage, A second supply port arranged to face the first supply port with respect to the mixing zone and to spray the source gas toward the mixing zone, a mixed gas of the source gas and the purge gas, And a third supply port which is supplied to the region.

The gas supply module may further include a second supply passage through which the raw material gas, the purge gas, or the reaction gas supplied to the second supply region is supplied. The gas supply module is connected to the second supply passage, Or a fourth supply port through which the reaction gas is supplied to the second supply region.

Further, the gas supply module may include a first source gas connecting flow path for connecting the first source supply flow path and the second supply port to each other, and a second source gas connecting flow path for connecting the mixing gas and the third supply port, A mixed gas connecting flow path for supplying the mixed gas to the first supply region and a second gas connecting flow path for connecting the second supply flow path and the fourth supply port to each other.

At this time, the second supply port and the first supply port are disposed so that their centers are mutually coincided.

According to the present invention having the above-described configuration, when the process gas is supplied toward the substrate, the process gas is concentrated on either the center portion or the edge of the substrate to prevent the process gas from being supplied unevenly, So as to improve the quality of the thin film.

Further, according to the present invention, it is possible to control the thickness of the thin film at the center and the edge of the substrate by adjusting the amount of the process gas supplied to the central portion and the edge of the substrate when there is a demand of the customer.

In addition, according to the present invention, when the thickness of the thin film is nonuniform only in the local region of the edge of the substrate, the amount of the process gas supplied to the partial region of the edge can be controlled to heal the unevenness of the thin film thickness.

1 is a cross-sectional view illustrating the internal structure of a thin film deposition apparatus according to an embodiment of the present invention,
2 is a schematic view schematically showing the configuration of a thin film deposition apparatus according to an embodiment of the present invention,
3 is a perspective view showing the shower head,
4 is a perspective view of the gas supply module,
5 is a sectional view taken along the line V-V 'in FIG. 4,
6 is an exploded sectional view of Fig. 5
Figure 7 is a schematic diagram showing the mixing of gases in the gas supply module,
8 is a graph showing a cycle for providing the source gas, the reactive gas, the purge gas and the plasma through the showerhead of the thin film deposition apparatus,
9 is a schematic view schematically showing a conventional ALD method.

Hereinafter, a gas supply unit and a thin film deposition apparatus having the gas supply unit according to various embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a cross-sectional view showing the internal structure of a thin film deposition apparatus 2000 according to an embodiment of the present invention, and FIG. 2 is a schematic view of the thin film deposition apparatus 2000.

1 and 2, the thin film deposition apparatus 2000 includes a chamber 12 for providing a processing space 18 in which a substrate W is processed, And a gas supply unit 1000 for supplying a process gas such as a source gas, a reaction gas, or a purge gas to the substrate W. [

The chamber 12 includes a chamber body 10 having a predetermined processing space 18 therein and providing a space for receiving and processing the substrate W and having an upper portion opened, And a chamber lid 11 for sealing the upper portion of the chamber.

The chamber body 10 may include openings (not shown) through which the substrate W is introduced into and / or removed from both sides or at least one side of the chamber body 10. Inside the chamber body 10, the substrate W is seated on the substrate support 16.

The substrate W is mounted on the upper surface of the substrate supporting part 16. The substrate supporting part 16 can be vertically movable to facilitate the operation when the substrate W is drawn in or drawn out have.

Meanwhile, the gas supply unit 1000 supplies various process gases to the substrate W. In this case, in the thin film deposition apparatus 2000 according to the present invention, the gas supply unit 1000 can supply the process gas individually toward the central portion and the edge of the substrate W when supplying the process gas toward the substrate W have.

That is, when the thickness of the thin film deposited on the substrate W is not uniform, the thickness uniformity of the thin film can be improved by adjusting the amount of the process gas supplied toward the center and the edge of the substrate, or the supply time. In addition, in the case of the above configuration, it is possible to control the thickness of the thin film at the central portion and the edge of the substrate by adjusting the amount of the process gas supplied to the central portion and the edge of the substrate when there is a request from the customer.

The gas supply unit 1000 includes a first supply region 105 provided in the processing space 18 and supplying a process gas toward a first region 107 corresponding to a central portion of the substrate W, And a second supply region (106) for supplying a process gas toward a second region (108) corresponding to an outer region of the central portion of the substrate (W), and a second supply region A first process gas supply unit 1100 for supplying the process gas to the first supply gas supply unit 1100 and a second process gas supply unit 1100 for supplying the process gas to the second supply region 106 separately from the first process gas supply unit 1100, And a supply unit 1200.

The first region 107 corresponds to the central portion of the substrate W in the processing space 18 and more specifically to the region corresponding to the upper portion of the central portion of the substrate W, Area. ≪ / RTI > The second region 108 is formed in the processing space 18 in a region corresponding to an outer region of the central portion of the substrate W and more specifically, May be defined as the area corresponding to the upper part of the outer area

The shower head 100 includes a first supply region 105 for individually supplying a process gas toward a first region 107 corresponding to a central portion of the substrate W, And a second supply region 106 for individually supplying the process gas toward the second region 108 corresponding to the outer region of the second region 108. The showerhead may include a housing 101 and the first supply area 105 and the second supply area 106 may be provided inside the housing 101. The first supply region 105 and the second supply region 106 correspond to a space partitioned and provided inside the housing 101. In this case, a spray hole 103 for spraying the process gas supplied from the first supply region 105 and the second supply region 106 may be formed in the lower portion of the housing 101. Thus, the process gas supplied to the first supply region 105 is injected into the first region 107 through the injection hole 103, and the process gas supplied to the second supply region 106 And is injected into the second region 108 through the injection hole 103.

Wherein the first supply region (105) and the second supply region (106) of the showerhead (100) respectively supply process gases to the first supply region (105) And a second process gas supply unit 1200 for supplying the process gas to the second supply region 106 separately from the process gas supply unit 1100 and the first process gas supply unit 1100.

Meanwhile, the showerhead 100 may be formed of one member such as the housing 101 as described above, or may be formed by a separate member coupled to each other.

Fig. 3 shows a case in which the showerhead 100 is divided into an injection plate 102 and a partition plate 104. Fig. 3 (A) is a side sectional view of the showerhead 100, and FIG. 3 (B) is a perspective view of the partition plate 104 in an inverted state.

Referring to FIGS. 1 and 3, the shower head 100 includes an injection plate 102 having a plurality of injection holes 103 for injecting the process gas toward the substrate W, And a partition plate (104) for partitioning a space between the first supply region (105) and the injection plate (102) into the second supply region (106).

The process gas supplied from the first process gas supply unit 1100 and the second process gas supply unit 1200 moves to the showerhead 100 and is discharged through the injection hole 103 of the injection plate 102, (W). At this time, the partition plate 104 divides the space between the partition plate 104 and the injection plate 102 into the first supply region 105 and the second supply region 106.

For example, the partition plate 104 is divided into a space between the partition plate 104 and the injection plate 102 by the partition wall 105, which is seated on the spray plate 102 and protruded to a predetermined length, (105) and the second supply region (106).

The partition plate 104 is seated on the upper portion of the injection plate 102 and is partitioned toward the injection plate 102 to partition the first supply region 105 and the second supply region 106. [ (105) is protruded. The space between the injection plate 102 and the partition plate 104 is partitioned into the first supply region 105 and the second supply region 106 by the partition wall 105. At this time, a sealing member (not shown) is formed between the partition wall 105 and the injection plate 102 to more reliably partition the first supply region 105 and the second supply region 106 by the partition wall 105 109). The sealing member 109 prevents the process gas supplied respectively to the first supply region 105 and the second supply region 106 from moving to another supply region.

The partition plate 104 is formed with a first inlet 111 formed at the center thereof to receive the process gas supplied from the first process gas supply unit 1100 and a second inlet 111 formed along the edge thereof, And a second inlet 110 into which the process gas supplied from the second inlet 1200 is introduced.

The process gas supplied along the first inlet 111 is supplied from the first supply region 105 toward the first region 107 and the process gas supplied along the second inlet 110 Is supplied from the second supply region 106 toward the second region 108. [

In this case, the gas supply unit 1000 supplies the process gas supplied from the first process gas supply unit 1100 to the first supply region 105 through the first inlet 111, And a gas supply module (500) for supplying the process gas supplied from the process gas supply unit (1200) to the second supply region (106) through the second inlet (110). The gas supply module 500 will be described in detail later.

1, the gas supply unit 1000 includes a first gas supply channel 300 to which purge gas or reaction gas supplied to the first supply zone 105 is supplied, a first gas supply channel 300 A mixing zone 312 in which the purge gas supplied from the first feed zone 105 is mixed with the raw material gas to form a mixed gas, (200). The gas supply unit 1000 may include a second supply passage 400 through which a raw material gas, a purge gas, or a reactive gas supplied to the second supply region 106 is supplied.

The first gas supply passage 300 is connected to the mixing zone 312 through the upper portion of the chamber 12 or the chamber lid 11, 1 supply port 302, as shown in Fig. The first gas supply channel 300 is connected to the first process gas supply unit 1100 to supply the reaction gas or the purge gas to the inside of the mixing zone 312.

In this case, the purge gas is supplied to the inside of the mixing zone 312 through the first gas supply passage 300 and the first supply port 302. The mixing zone 312 serves to connect the first gas supply channel 300 with the gas supply module 500 and further provides a space where the purge gas and the source gas are mixed.

The mixing chamber 312 is connected to the first gas supply passage 300 and has a channel connection portion 305 formed through the chamber lid 11. The mixing chamber 312 is formed inside the channel connection portion 305, .

The raw material gas supplied to the first supply region 105 is supplied to the gas supply module 500 through the first raw material supply passage 200 formed along the wall of the chamber 12.

The purge gas supplied to the inside of the mixing zone 312 is mixed with the source gas supplied from the gas supply module 500 to form a mixed gas so that the mixed gas is supplied to the shower head 100 (Not shown). The mixing zone 312 may be formed to have an appropriate space for mixing the purge gas and the source gas.

The second supply passage 400 is formed along the wall of the chamber 12 and is connected to the second supply region 106 of the shower head 100 through the gas supply module 500, A purge gas, or a reactive gas.

In this case, various process gases injected from the gas supply module 500 flow into the second inlet 110 of the showerhead 100 through the intermediate connection channel 600. A plurality of intermediate connection channels 600 may extend radially from the gas supply module 500 to connect the gas supply module 500 and the second inlet 110. Accordingly, the intermediate connection channel 600 allows the process gas to be supplied to the second supply region 106 through the second inlet 110 of the showerhead 100. Further, the process gas may be supplied to the second supply region 106 through the intermediate connection passage opened when the plurality of intermediate connection flow paths 600 are partially opened but not opened, It is possible to control the density distribution of the process gas supplied in the process gas. Therefore, according to the present invention, when the thickness of the thin film is uneven in only the local region of the edge of the substrate, the amount of the process gas supplied to a partial region of the edge can be controlled to heal the unevenness of the thin film thickness.

Meanwhile, various process gases supplied from the first purge feed passage 300, the mixing zone 312, and the first raw material feed passage 200 are supplied to the shower head 100 through the gas supply module 500 And the various process gases supplied from the second supply passage 400 are supplied to the second supply region 106 of the shower head 100 through the gas supply module 500. [ .

FIG. 4 is a perspective view of the gas supply module 500, FIG. 5 is a cross-sectional perspective view taken along line V-V of FIG. 4, and FIG. 6 is an exploded perspective view of FIG.

Referring to FIGS. 4 to 6, the gas supply module 500 may be positioned below the mixing zone 312.

The gas supply module 500 supplies the raw material gas supplied through the first raw material supply passage 200 to the mixing zone 312 to mix with the purge gas. Further, the purge gas and the raw material gas And serves to supply the mixed gas again toward the first inlet 111 of the lower showerhead 100. At this time, the source gas supplied from the gas supply module 500 and the purge gas supplied through the first purge supply channel 300 are supplied in the opposite directions from each other, and are met in the mixing zone 312.

That is, the raw material gas and the purge gas are not mixed while being supplied in the same direction, but in the present embodiment, the raw material gas and the purge gas are supplied to the mixing zone 312 in the opposite direction and mixed. Therefore, in the present embodiment, the raw material gas and the purge gas can be mixed more uniformly because they are mixed and supplied in opposite directions to each other as compared with the conventional method in which they are mixed while moving in the same direction. Further, in the conventional method, the mixed gas is concentrated and supplied to a partial region of the substrate W by the flow of the purge gas, which is relatively larger than the source gas. However, in the case of the present embodiment, the source gas and the purge gas are supplied in the opposite direction to each other and then mixed and then supplied to the lower portion, thereby uniformly supplying the mixed gas to a wider region than in the prior art.

Hereinafter, the configuration of the gas supply module 500 will be described in more detail.

The gas supply module 500 is connected to the first raw material supply passage 200 and injects the raw material gas toward the mixing zone 312 so that the first supply port 302 And a third supply port 112 for supplying the mixed gas of the source gas and the purge gas or the reactive gas to the first supply region 105. The second supply port 524 is disposed so as to face the first supply region 105, Respectively. The gas supply module 500 is connected to the second supply passage 400 so that the source gas, the purge gas or the reactive gas is supplied to the fourth supply port 122 ).

In this case, as described above, in order for the raw material gas and the purge gas to be supplied to the mixing zone 312 from opposite directions, the second supply port 524 and the end of the first purge supply path 300 The second supply port 524 and the first supply port 302 may be disposed such that the center of the second supply port 524 and the center of the first supply port 302 are aligned with each other with respect to the mixing zone 312, They can be arranged to coincide with each other. The first supply port 302 and the second supply port 524 are arranged to face each other with respect to the mixing zone 312 and are arranged such that the centers of the first supply port 302 and the second supply port 524 coincide with each other, The purge gas and the raw material gas supplied through the second supply port 524 are mixed with each other in the mixing zone 312 in opposite directions and can be uniformly mixed.

Meanwhile, the gas supply module 500 supplies the mixed gas in which the source gas and the purge gas are mixed, or when the reactive gas is supplied through the first purge supply channel 300, And a third supply port 112 for supplying the showerhead 100 toward the first inlet 111 of the shower head 100.

The gas supply module 500 is connected to the second supply passage 400 to supply various process gases supplied from the second supply passage 400 to the second inlet 110 of the showerhead 100, And a fourth supply port 122 for supplying the second supply port 122 to the second supply port 122. [

The gas supply module 500 includes a first source gas connection channel 512 for connecting the first source gas supply channel 200 and the second supply gate 524 to each other, And a mixed gas connecting flow path 508 connecting the third supply port 112 and supplying the mixed gas or reactive gas to the first supply region 105. The gas supply module 500 may include a second gas connection channel 540 connecting the second supply channel 400 and the fourth supply port 122 to each other.

Therefore, the raw material gas supplied through the first raw material supply passage 200 flows through the first raw material gas connecting passage 512 of the gas supply module 500 and the second supply port 524, (312). The process gas supplied through the second supply passage 400 flows through the second gas connection passage 540 of the gas supply module 500 and the fourth inlet 122 through the second inlet 110). The gas supply module 500 further includes a mixed gas connecting passage 508 for connecting the third supply port 112 and the mixing zone 312 with each other. The mixed gas or reaction gas inside the mixing zone 312 can be moved to the third supply port 112 through the mixed gas connection channel 508.

Specifically, the gas supply module 500 includes a body portion 502. The body portion 502 is provided with a first raw material gas inlet 510 connected to the first raw material supply passage 200 and a first raw material gas connecting passage 510 connected to the first raw material gas inlet 510 A second gas inlet 550 connected to the second supply passage 400 and a second 2-1 gas connecting passage 542 connected to the second gas inlet 550, An opening 504 is formed.

A supply part 535 is provided inside the opening part 504 and the supply part 535 includes an upper supply part 520 and a lower supply part 530.

The second supply port 524 is formed in the upper supply part 520 and the first and second raw material gas connecting ports 513 and 524 are connected to each other. And a flow path 514. Also, the upper supply part 520 includes a second-2 gas connection passage 544 connected to the second-1 gas connection passage 542.

The lower supply part 530 is provided at a lower portion of the third supply port 112 and the fourth supply port 122 and is provided below the upper supply part 520, And a second gas connecting passage 546 connecting the first supply port 544 and the fourth supply port 122 to supply the process gas to the second supply zone. The lower supply part 530 includes a connection port 509 for connecting the third supply port 112 and the mixed gas connection flow path 508.

The body 502 forms an outer appearance of the gas supply module 500 and may have a substantially cylindrical shape with a predetermined height and an opening 504 formed at a central portion thereof. A first raw material gas inlet 510 connected to the first raw material supply passage 200 to introduce the raw material gas is formed on one side of the body 502 and a second raw material gas inlet 510 To form a second gas inlet 550 into which the process gas is introduced.

The raw material gas introduced into the body 502 through the first raw material gas inlet 510 moves through the first raw material gas connecting passage 513 and flows into the second gas inlet 550, The process gas flowing into the body 502 through the second-1 gas connecting passage 542 is moved through the second-1 gas connecting passage 542.

Meanwhile, the upper supply part 520 and the lower supply part 530 are provided inside the opening part 504.

The second supply port 524 for supplying the source gas toward the mixing zone 312 is formed in the upper supply part 520 and the second supply port 524 And the first raw material gas connecting passage 513 that connects the first raw material gas connecting passage 513 and the first raw material gas connecting passage 513 are formed. Also, the upper supply part 520 includes a second-2 gas connection passage 544 connected to the second-1 gas connection passage 542.

Accordingly, the raw material gas, which has been moved through the first-material gas connecting passage 513 of the body portion 502, flows through the first-raw-material gas connecting passage 514 of the upper supplying portion 520 And is supplied to the mixing zone 312 through the second supply port 524. Further, the process gas moved through the second-1 gas connecting passage 542 of the body 502 moves along the second-2 gas connecting passage 544 of the upper supplying portion 520 .

The lower supply part 530 is connected to the lower part of the upper supply part 520 and further below the opening part 504 of the body part 502.

Specifically, the lower supply part 530 includes the third supply port 112 at a substantially central portion thereof, and a connection port 509 (not shown) for connecting the mixed gas connection port 508 and the third supply port 112 to each other. . The space between the upper supply part 520 and the inner wall of the opening 504 forms the mixed gas connecting passage 508 and the connecting hole 509 connects the mixed gas connecting passage 508, 3 supply port 112. [0050]

That is, the raw material gas supplied to the mixing zone 312 through the second supply port 524 is mixed with the purge gas supplied to the mixing zone 312 through the first supply port 302 And mixed to form a mixed gas. The mixed gas moves downward by the flow of the purge gas directed downward and flows into the space between the upper supply part 520 of the gas supply module 500 and the inner wall of the opening 504, And moves toward the lower side of the upper supply unit 520 through the upper supply unit 508. The mixed gas moved to the lower end of the upper supply part 520 is connected to the third supply port 112 through the connection port 509 of the lower supply part 530 connected to the lower end of the upper supply part 520 Is supplied to the first inlet 111 of the lower showerhead 100 through the third supply port 112.

The upper supply part 520 may include a central part 521 formed on the upper surface of the second supply port 524 and a plurality of extended parts 522 extending radially from the central part 521. The second supply port 524 connected to the first-second source gas connection passage 514 is formed on the upper surface of the central portion 521.

And a plurality of extending portions 522 extending outward with the central portion 521 as a center. In the present embodiment, the extension portions 522 are shown as four, but are not limited thereto and can be adjusted to an appropriate number. The extension 522 may include a fastener 523 for fastening fastening means (not shown) for fastening the upper supply part 520 to the inside of the opening 504. At this time, a space between the inner wall of the opening 504 and the plurality of extending portions 522 forms the mixed gas connecting passage 508.

In this case, as the number of the extension portions 522 increases, the number of the mixed gas connecting flow paths 508 between the extending portions 522 increases, and it becomes possible to supply the above-described mixed gas more uniformly. However, when the number of the extension portions 522 is increased, the total cross-sectional area of the mixed gas connection passage 508 through which the mixed gas passes is reduced due to the thickness of the extension portion 522. Accordingly, the number of the extensions 522 and the cross-sectional area size of the mixed gas connecting passage 508 can be determined in consideration of the required amount and kind of the raw material gas and the purge gas.

And a second gas inlet 550 connected to the second supply passage 400 at the other side of the body 502 to receive a process gas therein. And a second-1 gas connection passage 542 connected to the gas inlet 550. The upper supply part 520 includes a second-2 gas connection path 544 connected to the second-1 gas connection path 542, and the lower supply part 530 is connected to the fourth supply port And a second gas connecting passage 546 for connecting the fourth supply port 122 and the second gas connecting passage 544.

The process gas introduced into the body 502 through the second gas inlet 550 is moved through the second-1 gas connection channel 542. The process gas moved along the second-1 gas connecting passage 542 moves to the second-2 gas connecting passage 544 of the upper supplying unit 520. The second-2 gas connection passage 544 is bent downward and connected to the lower supply part 530 at the lower part.

The lower supply part 530 is formed with the second gas connection passage 546 for connecting the second gas connection passage 544 and the fourth supply connection 122 with each other. The second gas connecting passage 546 may extend radially from the upper portion of the lower supply part 530. In this case, the second to third gas connection passage 546 may be formed along the space between the lower supply part 530 and the upper supply part 520. For example, a plurality of protrusions 580 are provided on the upper surface of the lower supply part 530, and a space between the upper supply part 520 and the protrusions 580 is connected to the second gas connection path 546 . In this case, when four protrusions 580 are provided, four of the second to third gas connection passages 546 are formed between the four protrusions 580. The number of the projecting portions 580 and the second to third gas connecting flow paths 546 is merely an example and can be appropriately adjusted.

On the other hand, the fourth supply port 122 is formed at an end of the second-third gas connection passage 546, respectively. Specifically, a space between the lower supply part 530 and the inner wall of the opening 504 forms the second gas connection passage 546 and is connected to the fourth supply port 122.

The process gas moved along the second-2 gas connection passage 544 of the upper supply unit 520 flows between the protrusions 580 of the lower supply unit 530 and between the lower supply unit 530 and the openings The gas is supplied to the fourth supply port 122 along the second-third gas connection passage 546 formed along the space between the inner walls of the first and second supply ports 504 and 504. The process gas injected from the fourth supply port 122 is supplied to the second supply region 106 of the showerhead 100 through the second inlet 110.

FIG. 7 is a partially enlarged sectional view of FIG. 5. FIG.

The process of supplying the source gas or the reactive gas to the first supply zone of the showerhead 100 in the thin film deposition apparatus 2000 according to the present embodiment will be described with reference to FIGS. 1, 5, and 7 as follows.

First, when the raw material gas is supplied to the first supply zone of the showerhead 100, the raw material gas is supplied to the gas supply module 500 through the first raw material supply passage 200, Is supplied to the mixing zone 312 along the arrow 'A' through the second supply port 524 through the first source gas connection passage 512 inside the module 500. Meanwhile, the purge gas is supplied to the mixing zone 312 along the arrow 'B' through the first supply port 302 of the first purge supply passage 300. At this time, the raw material gas and the purge gas supplied to the mixing zone 312 are supplied from opposite directions and mixed in the mixing zone 312 as indicated by an arrow 'C' to form a mixed gas.

The mixed gas moves downward in the mixing zone 312 and flows into the space between the upper supply part 520 of the gas supply module 500 and the inner wall of the opening 504, To the lower end of the opening (504). The mixed gas is supplied from the lower end of the opening 504 to the third supply port 112 through the connection port 509 along the arrow E and through the third supply port 112, To the first inlet 111 of the showerhead 100 at the lower stage.

Meanwhile, when the reaction gas is supplied to the first supply zone of the showerhead 100, the reaction gas is supplied to the mixing zone 312 through the first purge supply channel 300. In this case, the reaction gas is supplied to the gas supply module 500 through the mixing zone 312, and the mixed gas connecting flow path 508, the connecting port 509, And the third supply port 112 to the showerhead 100 at the lower part.

8 is a graph showing the relationship between the raw material gas, the reactive gas, the purge gas, and the raw material gas supplied from the first process gas supply unit 1100 and the second process gas supply unit 1200 in the thin film deposition apparatus 2000 having the above- And the supply time and the supply time of the same process gas. 8, "Purge" means purge gas, "C" means supply by the first process gas supply unit 1100, and "E" means the second process gas Means supply by the supply unit 1200. In Fig. 8, the X axis shows time, the Y axis shows the kind of process gas to be supplied and the RF power, and the Z axis shows the amount of process gas or RF power to be supplied. FIG. 8 illustrates an operation according to one cycle for depositing a thin film on the substrate W. FIG.

8, the first process gas supply unit 1100 intermittently supplies a source gas toward the substrate W according to a cycle of depositing a thin film on the substrate W, The reaction gas and the purge gas are continuously supplied toward the substrate W. The second process gas supply unit 1200 intermittently supplies the source gas toward the substrate according to a cycle of depositing a thin film on the substrate and continuously supplies the reaction gas toward the substrate W regardless of the cycle .

In the thin film deposition apparatus 2000 according to the present invention, the cycle of a single cycle for depositing a single thin film on the substrate W has a very short period of time, which is approximately several seconds or less. Such a very short period can improve the throughput of the thin film deposition apparatus by reducing the time for depositing a single thin film, but it becomes very difficult to control the supply amount of the process gas in a single cycle. Accordingly, in the thin film deposition apparatus 2000 according to the present invention, the reaction gas is continuously supplied toward the substrate W by the first process gas supply unit 1100 and the second process gas supply unit 1200, It is supplied intermittently according to the cycle to form a single cycle.

That is, as shown in FIG. 8, the first process gas supply unit 1100 intermittently supplies the raw material gas to the first region of the substrate W according to a cycle, while a reactive gas (not shown) And purge gas are continuously supplied regardless of the cycle.

The second process gas supply unit 1200 may supply the source gas to the second region of the substrate W in a cycle similar to the first process gas supply unit 1100 described above, (Not shown) continuously to the substrate W regardless of the cycle, and continuously supplies the purge gas.

However, since the second process gas supply unit 1200 needs to adjust the supply amount or time of the process gas to the second region of the substrate W, the time for supplying the source gas or the purge gas toward the substrate, At least one of the feed amounts can be adjusted.

That is, when it is desired to control the thickness of the thin film deposited on all or a part of the second region including the edge of the substrate W, the second process gas supply unit 1200 supplies the source gas or the purge gas The thickness of the thin film is adjusted by adjusting at least one of the time and the supply amount.

Meanwhile, in the thin film deposition apparatus 2000 according to the present invention, the gas supply unit 1000 may further include a plasma supply unit (not shown) for supplying a plasma to a process gas to be supplied. In this case, the plasma supplier may provide plasma by, for example, supplied RF power. FIG. 8 also shows the supply time and amount of the RF power as described above, and the RF power is intermittently provided according to the cycle, thereby providing the plasma intermittently according to the cycle.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention as defined in the appended claims. You can do it. It is therefore to be understood that the modified embodiments are included in the technical scope of the present invention if they basically include elements of the claims of the present invention.

12 ... chamber
16: substrate support
18 ... processing space
100 ... shower head
107 ... first inlet
110 ... 2nd inlet
112 ... third supply port
122 ... fourth supply port
300 ... First purge feed passage
200 ... First raw material supply flow path
400 ... second supply passage
312 ... mixing zone
302 ... first supply port
524 ... second supply port
512 ... First raw material gas connecting channel
540 ... second gas connection channel
508 ... mixed gas connection channel
500 ... gas supply module
502 ... body portion
510 ... The first raw material gas inlet
550 ... second gas inlet
513 ... Material gas connecting channel
514 ... Material gas connection channel
542 ... 2-1 gas connection channel
544 ... 2-2 gas connection channel
546 ... Gas connection channel 2-3
504 ... opening
509 ... connector
535 ... supply section
520 ... upper portion
530 ... lower part
580 ... protrusions
1000 ... gas supply unit
2000 ... Thin Film Deposition Device

Claims (12)

A chamber for providing a processing space in which the substrate is processed;
A first supply region provided in the processing space for supplying a process gas toward a first region corresponding to a central portion of the substrate and a second supply region for supplying a process gas toward a second region corresponding to an outer region of the substrate, A showerhead having a first supply region for supplying a second supply gas;
A first process gas supply unit for supplying the process gas to the first supply region;
A second process gas supply unit for supplying the process gas to the second supply region separately from the first process gas supply unit; And
And a gas supply module that supplies the process gas supplied from the first process gas supply unit to the first supply region and further supplies the process gas supplied from the second process gas supply unit to the second supply region and,
A plurality of intermediate interconnections extending radially in the gas supply module to connect the gas supply module and the second supply region and at least partially open to regulate the density distribution of the process gas supplied to the second supply region, Wherein the thin film deposition apparatus further comprises a flow path. The method according to claim 1,
The showerhead
And a housing for providing the first supply region and the second supply region therein,
Wherein a spray hole for spraying a process gas supplied from the first supply region and the second supply region is formed in a lower portion of the housing. 3. The method of claim 2,
The housing
An injection plate having the injection hole,
And a partition plate that divides a space between the injection plate and the injection plate into the first supply region and the second supply region. The method of claim 3,
Wherein the partition plate is partitioned into the first supply region and the second supply region by a partition wall which is seated on the injection plate and protruded by a predetermined length, Device. The method according to claim 1,
The first process gas supply unit intermittently supplies the source gas toward the substrate according to a cycle of depositing a thin film on the substrate and continuously supplies the reaction gas and the purge gas toward the substrate regardless of the cycle . The method according to claim 1,
Wherein the second process gas supply unit intermittently supplies the source gas toward the substrate according to a cycle for depositing a thin film on the substrate and continuously supplies the reaction gas toward the substrate regardless of the cycle. Deposition apparatus. The method according to claim 6,
The purge gas is further supplied to the substrate by the second process gas supply unit and at least one of the time and the supply amount of the source gas or the purge gas are changed by the second process gas supply unit toward the substrate Wherein the thin film deposition apparatus comprises: delete The method according to claim 1,
A first purge supply passage to which purge gas or reaction gas supplied to the first supply region is supplied and is connected to the first supply port,
A mixing zone in which the purge gas supplied from the first purge supply passage is mixed with a source gas to form a mixed gas,
Further comprising a first raw material supply flow passage to which a raw material gas supplied to the first supply region is supplied,
The gas supply module includes a second supply port connected to the first material supply passage and spraying the material gas toward the mixing zone and arranged to face the first supply port with respect to the mixing zone, And a third supply port through which the mixed gas of the purge gas or the reactive gas is supplied to the first supply region. 10. The method of claim 9,
Further comprising a second supply passage through which a source gas, a purge gas, or a reaction gas supplied to the second supply region is supplied,
Wherein the gas supply module further comprises a fourth supply port connected to the second supply passage to supply the source gas, the purge gas or the reaction gas to the second supply region. 11. The method of claim 10,
The gas supply module
A first feed gas flow channel for connecting the first feed channel and the second feed port to each other, and a second feed channel for feeding the mixed gas or the reactive gas to the first feed region by connecting the mixing zone and the third feed port, And a second gas connection channel for connecting the second supply channel and the fourth supply port to each other. 10. The method of claim 9,
Wherein the second supply port and the first supply port are arranged so that the centers thereof coincide with each other.


KR1020160011229A 2016-01-29 2016-01-29 Thin film deposition apparatus KR101789021B1 (en)

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002252219A (en) * 2001-02-26 2002-09-06 Tokyo Electron Ltd Film forming apparatus and film forming method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002252219A (en) * 2001-02-26 2002-09-06 Tokyo Electron Ltd Film forming apparatus and film forming method

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