KR100700448B1 - A triple showerhead and ald apparatus that have the triple showerhead - Google Patents

Abstract

A triple shower head and an ALD(Atomic Layer Deposition) apparatus with the same are provided to prevent the generation of clogging and to control selectively the temperature corresponding to each source by using an additional path capable of diffusing a plurality of sources into a chamber. A triple shower head includes a circle type source supply plate, a doughnut type source supply plate, and a baffle. The circle type source supply plate(210) is used for diffusing a first process source downward through a first source supply line. The doughnut type source supply plate(220) is connected to a first lower portion of the circle type source supply plate. Second and third source supply lines are connected to both sides of the doughnut type source supply plate in order to diffuse second and third process sources toward a center portion. The baffle is connected to a second lower portion of the doughnut type source supply plate. The baffle includes a plurality of source spraying holes capable of spraying each process source downward.

Description

Triple shower head and atomic layer deposition apparatus having the same {A TRIPLE SHOWERHEAD AND ALD APPARATUS THAT HAVE THE TRIPLE SHOWERHEAD}

1 is a conceptual diagram showing the structure of a conventional atomic layer deposition apparatus.

2 is a conceptual diagram illustrating a structure of an atomic layer deposition apparatus according to an embodiment of the present invention.

3 is a view showing the structure of a triple shower head according to an embodiment of the present invention.

4 is a plan view showing the structure of a circular source supply plate according to an embodiment of the present invention.

5 is a plan view showing the structure of a donut-shaped sauce supply plate according to an embodiment of the present invention.

6 is a plan view illustrating a structure of a baffle according to an embodiment of the present invention.

Figure 7 is a schematic diagram showing the arrangement of the injection cavity according to an embodiment of the present invention.

The present invention relates to a triple shower head capable of depositing three different sources and an atomic layer deposition apparatus having the same.

Generally, a technique of forming a thin film on a substrate is classified into a physical vapor deposition (PVD) method using a physical method and a chemical vapor deposition (CVD) method using a chemical method, but as semiconductor devices become highly integrated and high performance, PVD and Semiconductor manufacturing technology using CVD has reached its limit. To overcome this limitation, Atomic Layer Deposition (ALD) technology has been developed, in which a film is formed on a substrate while sequentially supplying a source containing an element necessary for thin film formation.

The ALD method can deposit a film having an improved step coverage to an accurate thickness even on a substrate having a complex shape by sequentially supplying a source. The ALD method is perfect for general CVD and other CVD prior arts (APCVD, LPCVD, PVD, PECVD, MOCVD, PICVD, PECVD), and thin film thickness control that is difficult to implement by sputtering, evaporation, electroplating, etc. Can be implemented.

In particular, ALD is very effective in forming a very thin film such as a gate insulating film or a diffusion barrier of a semiconductor device. In addition, the ALD method can obtain an effect of excellent step coverage while simultaneously depositing a thin and uniform thin film due to high integration of semiconductor devices.

Hereinafter, a general atomic layer deposition apparatus 1 will be described with reference to FIG. 1.

First, a chamber 10 capable of maintaining the interior thereof in a vacuum state is provided. At this time, the inside of the chamber 10 should maintain a vacuum degree of about 1 ~ 5 Torr during the process. A wafer chuck 20 in which the wafer W is mounted is disposed below the chamber 10, and the process is performed with the wafer mounted on the wafer chuck. At this time, the wafer chuck 20 is provided with wafer heating means (not shown) to adjust the temperature of the wafer. When the wafer temperature reaches the deposition temperature by the wafer heating means, the deposition process is started. . On the other hand, a shower head 30 for supplying a raw material source is disposed above the chamber 10. The upper portion of the shower head 30 is connected to a source supply line 32 for supplying a process source from the outside into the chamber, and is evenly spread through the shower head 30 and sprayed in the direction of the wafer. Therefore, a space in which the process source can be diffused is formed in the shower head 30, and a baffle 34 having a plurality of spray holes is uniformly formed therein for uniformly spraying the process source. .

In addition, an exhaust port 40 is formed at one side of the chamber 10, which serves to discharge by-products generated during the process to the outside.

In atomic layer deposition made by the above-described atomic layer deposition apparatus 1, the characteristics of the film formed according to the reaction source are changed. Since the thin film is deposited by ALD-specific half reaction, a chemically stable reaction source must be used in each reaction step. In addition, ALD should be composed of a structure that induces a stable and fast reaction.

Exhaust systems are also required to discharge by-products or excess reactants, but above all, multi-layer processes require a showerhead with easy supply and purge designed with several source feed lines. Do. In other words, when using several raw material sources, different inflow paths are used to prevent the formation of by-products due to mutual collisions and reactions, and to prevent raw material clogging of the inner wall of the injection hole. Head is required.

In addition, the ALD apparatus needs to have a design and material of a wafer chuck having a wide process window for controlling the temperature of the substrate against various sources.

SUMMARY OF THE INVENTION An object of the present invention is to provide a showerhead capable of depositing various source materials in one apparatus and an atomic layer deposition apparatus having the same.

In order to achieve the above object, the present invention, the first source supply pipe is connected to the center of the circular source supply plate for diffusing the first process source; A donut-type source supply plate coupled to the lower side of the circular source supply plate and having second and third source supply pipes connected to both left and right sides, respectively, to diffuse the second and third process sources in a central direction; A baffle coupled to a lower portion of the donut-type source supply plate and having a plurality of source injection holes vertically penetrating through the front surface to separately spray each process source supplied from the first, second and third source supply pipes; It provides a triple shower head comprising a.

Hereinafter, with reference to the accompanying drawings will be described in detail a specific embodiment of the present invention.

As shown in FIG. 2, the atomic layer deposition apparatus 100 according to the present embodiment also includes a chamber 110 as in the related art; Wafer chuck 120; Shower head 200; Exhaust port 130; is configured to include. Herein, the functions and roles of the components are the same as those of the conventional art, and thus will not be repeated here. In the present embodiment, a description will be given of the characteristic parts.

First, the most characteristic triple shower head 200 in the atomic layer deposition apparatus 100 according to the present embodiment will be described. Triple showerhead 200 according to the present embodiment, as shown in Figure 3, a circular source supply plate 210; Donut source plate 220; The baffle 230; is configured to include.

Here, the circular source supply plate 210 is a component that is connected to the first source supply pipe 240 at the center to diffuse the first process source downward. This circular source supply plate 210 includes a circular plate 212, as shown in Figs. A first source inlet hole 214; The first source diffusion cavity 216. The circular plate 212 is a component forming the overall shape of the circular source supply plate 210. The first source inlet hole 214 is formed at an upper center of the circular plate 212 and is a component to which the first source supply pipe 240 is connected. Four screw fixing grooves 218 for coupling with the first source supply pipe 240 are formed at the periphery of the first source inlet hole 214. In addition, the first source diffusion cavity 216 is formed on the bottom surface of the circular plate 212 by being engraved upward, so that the first process source introduced by the first source introduction hole 214 is wide. It is a component that provides a space to spread. That is, as shown in Figure 3, it is preferably engraved on the lower surface of the circular plate 212 to form a constant space, it is preferably formed to have a slanted surface so that the source is evenly diffused in the downward direction. The first source supplied to the circular plate by the first source supply pipe 240 is primarily diffused in the first source diffusion cavity 216.

Next, the donut-shaped source supply plate 220 is coupled to the lower side of the circular source supply plate 210, and the second and third source supply pipes 250 and 260 are connected to the left and right sides, respectively, to process the second and third processes. A component that diffuses the source in the central direction. In this embodiment, the donut-shaped source supply plate 220, as shown in Figure 5, the plate 222; Second and third source inlet holes 223 and 224; And second and third source diffusion cavities 225 and 226. Here, the plate 222 is a component forming the overall shape of the donut-shaped source supply plate 220. In this case, the plate 222 has a larger diameter than the circular plate 212 and has a circular shape as a whole.

In addition, the upper and second source inlet holes 223 and 224 are respectively formed on the upper and left sides of the upper surface of the plate 222 and are the components to which the second and third source supply pipes 250 and 260 are connected. The second and third source introduction holes 223 and 224 are disposed to face opposite sides of the plate 222, as shown in FIG. 5. At this time, the positions of the source inlet holes 223 and 224 are disposed outside the circular source supply plate 212. A screw insertion groove 227 for fixing the second and third source supply pipes 250 and 260 is also formed at the outer side of the second and third source inlet holes 223 and 224.

In addition, the second and third source diffusion cavities 225 and 226 are formed in the plate 222, and are connected to the second and third source inlet holes 223 and 224 to allow the second and third source inlet. The second and third process sources introduced by the holes are diffused, respectively. The second and third source diffusion cavities 225 and 226 are formed in the plate 222 in a donut shape, respectively, as shown in FIG. The center portion of the source diffusion cavities 225 and 226 is connected to the source inlet holes 223 and 224 so that the source supplied by the source inlet hole is primarily diffused through the source diffusion cavity. .

In addition, as illustrated in FIG. 3, an insertion groove 228 having a size into which the circular source supply plate 210 may be inserted is engraved in the center area of the upper surface of the donut-type source supply plate 220. The circular source supply plate 210 is inserted into the insertion groove and coupled with the donut-shaped source supply plate 220, which may prevent an external leak of the first source and reduce the space occupied by the shower head. At this time, it is more preferable that a sealing member (not shown in the drawing) is further provided on the lateral engagement surface of the circular source supply plate 210 and the donut-shaped source supply plate 220.

Next, as illustrated in FIG. 3, the baffle 230 is coupled to the lower portion of the donut-shaped source supply plate 220, and a plurality of source injection holes penetrate vertically through the entire surface of the first, second, 3 Source A component that individually injects each process source from the supply pipe. In this embodiment, as illustrated in FIG. 6, the baffles 230 are arranged in a plurality of source injection holes 232 in a straight line, and a plurality of injection holes are formed by the partition wall 234. Hollow heat is composed of a structure that is alternately connected to the first, second, third source supply pipe. That is, as shown in FIG. 7, the uppermost injection column 236A is connected to the first source diffusion cavity 216 to supply a first source, and then the injection column 236B is connected to the second source. Is connected with a second source diffusion cavity 225 to supply a second source, and the next injection cavity 236C is connected with a third source diffusion cavity 226 to supply a third source, and then an injection cavity 236D is supplied. ) Is again connected to the first source diffusion cavity 216. Therefore, in the overall baffle structure, each source is evenly sprayed. In addition, there is an advantage that the clogging phenomenon does not occur because the diffusion path for each source is different.

And in this embodiment, as shown in Figure 2, disposed on the upper side of the circular source supply plate 210, the reed heater 270 for adjusting the temperature of the triple shower head is further provided, for each source It is desirable to be able to selectively control the temperature.

In the present embodiment, it is preferable that the wafer chuck 120 is made of a transparent material. Conventional aluminum chucks have a long cool-down time, which is disadvantageous for experiments in selecting multiple source sources that require a continuous process, ie speed. Therefore, in this embodiment, the wafer chuck 120 is made of a transparent material, and the temperature of the wafer chuck is controlled by using a lamp. By controlling the temperature of the wafer chuck using a lamp in this way, the temperature selectivity for the wafer is increased, thereby increasing the efficiency and accuracy of the process.

According to the present invention, since multiple sources are diffused into the chamber through separate paths, clogging does not occur, and there is an advantage that temperature can be selectively adjusted for each source.

Claims (10)

A circular source supply plate connected to a first source supply pipe at a center thereof to diffuse the first process source downward; A donut-type source supply plate coupled to the lower side of the circular source supply plate and having second and third source supply pipes connected to both left and right sides, respectively, to diffuse the second and third process sources in a central direction; A baffle coupled to a lower portion of the donut-type source supply plate and having a plurality of source injection holes vertically penetrating through the front surface to separately spray each process source supplied from the first, second and third source supply pipes; Triple showerhead comprising a. The method of claim 1, wherein the circular source supply plate, A circular plate forming an overall shape of the circular source supply plate; A first source inlet hole formed in an upper center of the circular plate and to which a first source supply pipe is connected; And a first source diffusion cavity which is formed on the bottom surface of the circular plate upwardly and has a first process source widely spread by the first source introduction hole. Triple showerhead. The method of claim 1, wherein the donut source plate, A plate forming an overall shape of the donut-shaped sauce supply plate; Second and third source inlet holes respectively formed on the left and right sides of the plate and to which second and third source supply pipes are connected; Second and third source diffusion cavities formed in the plate and connected to the second and third source inlet holes to diffuse the second and third process sources introduced by the second and third source inlet holes, respectively; Triple showerhead, characterized in that configured to include. The method of claim 1, An insertion groove having a size into which the circular source supply plate can be inserted is engraved in the center area of the upper surface of the donut source supply plate, and the circular source supply plate is inserted into the insertion groove to be coupled to the donut source supply plate. Triple showerhead, characterized in that. The method of claim 4, wherein And a sealing member is further provided on a lateral engagement surface of the circular source supply plate and the donut-type source supply plate. The method of claim 1, wherein the baffle is A plurality of source injection holes are arranged in a straight line to form a plurality of injection columns, each injection column is alternately connected to the first, second, third source supply pipe, characterized in that the triple shower head. The method of claim 1, And a reed heater disposed on an upper side of the circular source supply plate and configured to adjust a temperature of the triple shower head. An atomic layer deposition apparatus comprising the triple showerhead and a wafer chuck according to any one of claims 1 to 7. The method of claim 8, wherein the wafer chuck, An atomic layer deposition apparatus comprising a transparent material. The method of claim 9, wherein the wafer chuck, An atomic layer deposition apparatus characterized in that the temperature is controlled by using a lamp.

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