KR101171677B1 - Apparatus for multi component layer deposition for atomic layer deposition - Google Patents

Abstract

An atomic layer deposition apparatus capable of depositing a multicomponent thin film having a composition of two or more elements is disclosed. An atomic layer deposition apparatus for depositing a multi-component thin film includes a plurality of injection modules each providing a plurality of different source gases to a substrate, a first injection module for providing one kind of precursor gas, and the first injection And a second injection module for providing two different precursor gases from the module. Here, the second injection module may be formed to provide the two kinds of precursor gases through flow paths independent of each other.

Atomic layer deposition, ALD, precursor, multi-component thin film

Description

Atomic layer deposition apparatus for deposition of multi-component thin films {APPARATUS FOR MULTI COMPONENT LAYER DEPOSITION FOR ATOMIC LAYER DEPOSITION}

The present invention is to provide an atomic layer deposition apparatus capable of depositing a multi-component thin film having a composition of two or more elements.

In general, a method of depositing a thin film having a predetermined thickness on a substrate such as a semiconductor substrate or glass includes physical vapor deposition (PVD) using physical collision, such as sputtering, and chemical reaction using a chemical reaction. Chemical vapor deposition (CVD) and the like. Recently, as the design rules of semiconductor devices are drastically fined, thin films of fine patterns are required, and the step height of regions where thin films are formed is also very large. Due to this trend, the use of atomic layer deposition (ALD), which is capable of forming a very uniform pattern of atomic layer thickness very uniformly and has excellent step coverage, has been increasing.

ALD is similar to the general chemical vapor deposition method in that it uses chemical reactions between gas molecules. However, in contrast to conventional CVD in which a plurality of gas molecules are simultaneously injected into the chamber to deposit the reaction product generated on the substrate, ALD injects a gas containing one source material into the chamber to chemisorb the heated substrate. There is a difference in that a product by chemical reaction between the source materials is deposited on the substrate surface by injecting a gas containing another source material into the chamber. These ALDs are widely attracting attention because they have the advantage of being able to deposit pure thin films having excellent step coverage characteristics and low impurity contents.

A semi-batch type is disclosed in which a deposition process is simultaneously performed on a plurality of substrates to improve throughput in an atomic layer deposition apparatus. In general, the semi-batch type atomic layer deposition apparatus has a region in which different kinds of deposition gases are injected, and the substrate is sequentially passed through each region by the high speed rotation of the gas injection unit or the susceptor. Chemical reactions occur between and the reaction products are deposited.

On the other hand, while the conventional atomic layer deposition apparatus is effective to deposit a single component oxide or nitride, it is difficult to deposit a multicomponent thin film having a composition of two elements or more. Here, at least three or more source gases are required to deposit the multi-component thin film, but in order to deposit three or more source gases, increasing the number of cycles or increasing the length of the supply pulse cannot be solved. In the deposition cycle, the number of steps must be increased, which increases the number of branches. For example, in order to deposit a three-component thin film, steps are increased, such as a first source gas-> purge gas-> second source gas-> purge gas-> third source gas-> purge gas. However, in the case of such an atomic layer deposition apparatus, as the number of source gases increases, the number of injection modules to be formed in the gas injection unit increases, thereby increasing the size of the deposition apparatus. On the other hand, reducing the size of the injection module can suppress the increase in the size of the deposition apparatus, but it is difficult to sufficiently secure the area of the injection module, and the separation effect of the injection module by the purge gas is difficult to function properly. This causes a problem that the deposition efficiency is low and the film quality may be lowered.

Embodiments of the present invention for solving the above problems can deposit a multi-component thin film of two or more elements, the atomic layer that can prevent the degradation of the film quality by suppressing the increase in the size of the deposition apparatus and improve the separation effect of the source gas It is to provide a vapor deposition apparatus.

According to embodiments of the present invention for achieving the above object of the present invention, a semi batch type atomic layer deposition apparatus for depositing a multi-component thin film of two or more elements, a plurality of source gases different from each other on the substrate; A plurality of injection modules are provided to provide each, and may include a first injection module for providing one precursor gas and a second injection module for providing two different precursor gases different from the first injection module. have. Here, the second injection module may be formed to provide the two kinds of precursor gases through flow paths independent of each other.

In an embodiment, the second injection module may include a first shell having an injection hole for supplying the precursor gas, a second shell coupled to the first shell to form an appearance of the second injection module, and the first and It may be configured as a third shell provided inside the second shell and divided into two buffer parts parallel to the vertical space of the second injection module and formed with a plurality of injection holes.

In addition, the third shell is formed with a plurality of first injection holes for providing a precursor gas inside the first buffer portion above the third shell to the substrate, and the second shell is a second buffer below the third shell. A plurality of second injection holes may be formed to provide the precursor gas inside the part to the substrate. The third shell may include a coupling boss that protrudes downward and penetrates through the second shell, and the first injection hole may be formed through the coupling boss. In addition, the second shell may have a coupling hole into which the coupling boss is inserted and coupled, and the coupling hole may be formed in a region that does not overlap the second injection hole. Here, the guide hole may be formed to guide the coupling of the coupling boss around the coupling hole.

On the other hand, according to another embodiment of the present invention for achieving the above object of the present invention, the atomic layer deposition apparatus for depositing a multi-component thin film, a process chamber for providing a space in which the deposition process is performed, the process chamber A susceptor provided inside and seated on a plurality of substrates and a plurality of injection modules provided on the substrate to provide a plurality of different source gases to the substrate, respectively, may be configured to include a gas injection unit. Here, the gas injection unit is composed of a first injection module for providing one kind of precursor gas and a second injection module for providing two kinds of precursor gases different from the first injection module, wherein the second injection module is It can be formed to provide the two kinds of precursor gas through a flow path independent of each other.

In an embodiment, a precursor gas supply source for supplying a precursor gas to the second injection module is provided, and a control valve is provided on the flow path for supplying the precursor gas from the precursor gas supply source to the second injection module, respectively, and the precursor gas is provided. A gas controller may be provided to control the operation of the control valve to alternately supply precursor gas to the second injection module from a source.

On the other hand, according to other embodiments of the present invention for achieving the above object of the present invention, the atomic layer deposition method for the deposition of the multi-component thin film, the atomic layer deposition method for the deposition of the multi-component thin film of at least two elements The atomic layer deposition apparatus includes a plurality of injection modules for providing different source gases. And a first injection module of one of the injection modules provides one precursor gas, and at least one second injection module provides two different precursor gases, and one precursor in the first injection module. Providing a gas, providing two different precursor gases in the second injection module, and reacting with the precursor gas by providing a reactance in at least one of the remaining injection modules. . Here, the second injection module alternately provides the two precursor gases, so that the multi-component thin film is deposited in-situ in the same process chamber.

In an embodiment, the atomic layer deposition apparatus is divided into eight injection modules to deposit a multicomponent thin film as the substrate sequentially passes through the eight injection modules, wherein the first injection module provides a first precursor gas to the substrate. Providing a second precursor gas that is different from the first precursor gas in a second injection module, again providing the first precursor gas in the first injection module and the first and second in the second injection module. And providing a third precursor gas different from the second precursor gas.

As described above, according to the embodiments of the present invention, by providing a dual-component injection module capable of injecting different source gases through separate flow paths, the multi-component thin film of two or more elements in the eight-quarter gas injection unit Can be deposited.

In addition, even if the number of constituent elements of the thin film is increased, the area of the injection module can be secured by a predetermined size or more, and the size increase of the gas injection unit and the atomic layer deposition apparatus can be suppressed.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited to or limited by the embodiments. In describing the present invention, a detailed description of well-known functions or constructions may be omitted for clarity of the present invention.

Hereinafter, the atomic layer deposition apparatus 100 and the gas injection unit 103 according to an embodiment of the present invention will be described in detail with reference to FIGS. 1 to 5. For reference, FIG. 1 is a longitudinal cross-sectional view for describing an atomic layer deposition apparatus 100 according to an embodiment of the present invention, and FIG. 2 is a gas injection unit 103 in the atomic layer deposition apparatus 100 of FIG. 1. A plan view illustrating an example of the above. 3 is a cross-sectional view of the second injection module 132 in the gas injection unit 103 of FIG. 2, and FIG. 4 is an exploded perspective view of main parts of the second injection module 132 of FIG. 3. 5 is a flowchart illustrating an atomic layer deposition process of a multicomponent thin film using the gas injection unit 103 of FIG. 2.

Referring to the drawings, an atomic layer deposition apparatus (ALD) 100 includes a process chamber 101, a susceptor 102, and a gas injection unit 103.

For reference, the atomic layer deposition apparatus (ALD) 100 described as an example in the present embodiments may simultaneously deposit a plurality of substrates 10 in order to improve throughput and quality. And a predetermined thin film as the surface of the substrate 10 passes through a region in which different kinds of gases injected from the gas injection unit 103 are injected while the surface of the substrate 10 is supported in parallel to the gas injection unit 103. A semi-batch type of this deposited form may be used. Here, the detailed technical configuration of the general components of the atomic layer deposition apparatus 100 can be understood from the known technology and are not the gist of the present invention, and thus, detailed descriptions and illustrations will be omitted and briefly described only for the main components. do.

In addition, in the present embodiment, the substrate 10 to be deposited may be a silicon wafer. However, the object of the present invention is not limited to the silicon wafer, and the substrate 10 may be a transparent substrate including glass used for a flat panel display device such as a liquid crystal display (LCD) and a plasma display panel (PDP). . In addition, the shape and size of the substrate 10 is not limited by the drawings, and may have substantially various shapes and sizes, such as a circle and a rectangle.

In addition, in the present embodiment, 'source gas' refers to gases including a source material for depositing a predetermined thin film, and includes a precursor gas and a precursor gas including constituent elements forming the thin film. And a reactant to chemically react with each other to form a thin film according to a predetermined reaction product, and a purge gas for removing unreacted gas such as precursor gas and reactance and residual gas.

The susceptor 102 is provided in the process chamber 101 in which the deposition process is performed so that the substrate 10 is seated in the horizontal direction and revolves at a predetermined speed. For example, the susceptor 102 may be formed such that six substrates 10 are seated at regular intervals along the circumferential direction of the susceptor 102.

The gas injection unit 103 is formed to inject two or more different source gases so as to deposit a multicomponent thin film having a composition of two or more elements, and in particular, provides the source gas for the same time to the revolving substrate 10. In order to do so, the region 130 in which each source gas is injected may be equally formed in the gas injection unit 103. Here, the injection region 130 is defined as a region in which a plurality of injection holes 321 and 331 in which the source gas is injected is formed. In FIG. 2, the injection module 131 is an area in which each source gas is injected without showing the injection holes. , 132, 133, and 134 are shown in solid lines.

For example, the gas injection unit 103 includes a plurality of injection regions 130 through which different types of source gases (in this embodiment, precursor gas, purge gas, and reactance) are injected, and the gas injection unit 103 is formed. Eight injection modules (131, 132, 133, 134) of the fan-shaped partitioned at the same angle with respect to the center of the) may be composed. In addition, the gas injection unit 103 sequentially passes through the first to fourth injection modules 131, 132, 133, and 134 as the substrate 10 rotates, and the precursor gas, purge gas, and reactance on the substrate 10. The injection modules 131, 132, 133, and 134 are disposed to form a predetermined thin film by providing a purge gas. Here, in the present embodiment, the eight injection modules 131, 132, 133, and 134 may react with the first injection module 131 and the second injection module 132, which provide the precursor gases S1, S2, and S3, and react with each other. It may be composed of two third injection module 133 for providing a gas and four fourth injection module 134 for providing a purge gas, the first to fourth injection module (131, 132, 133, 134) Source gas supply units 141, 142, and 143 may be connected to the source gases. An exhaust line 135 may be provided to discharge the exhaust gas from the upper portion of the substrate 10 through the gas injection unit 103 along the boundary of each injection module 131, 132, 133, and 134.

However, the present invention is not limited by the drawings, and the shape, size, and number of the injection modules 131, 132, 133, and 134 may be changed in various ways. In addition, the gas injection unit 103 illustrated in the drawings is only an exemplary form for describing the present invention, and may have a substantially various form capable of injecting different types of source gases for each region.

Meanwhile, in the embodiments of the present invention, at least two or more kinds of precursor gases are used to deposit a multi-component thin film including two or more components, and one specific precursor is used once depending on the concentration of an element constituting the thin film to be deposited. Two or more kinds of precursor gases including specific precursors may be used so that they may be provided two or more times during the deposition cycle. However, two or more kinds of precursor gases including specific precursors may use the same gas or different precursors, including precursors of the same element.

In the present exemplary embodiment, one kind of precursor gas S1 is provided in the first injection module 131, and two kinds of precursor gases S2 and S3 are alternately provided in the second injection module 132. That is, the first precursor gas S1 provided by the first injection module 131 is a precursor gas having a high concentration of elemental material included in the thin film among the three precursor gases S1, S2, and S3, and atomic layer deposition. As the first precursor gas is continuously provided during the process, and the second and third precursor gases S2 and S3 are alternately provided, a thin film may be deposited. However, the present invention is not limited by the drawings, and may be configured such that two kinds of precursor gases are alternately provided in the first injection module 131, and the first and second injection modules 131 and 132 may be provided. The number and type of precursor gases provided at may vary substantially.

In the present exemplary embodiment, since one kind of precursor gas S1 is provided in the first injection module 131, the first injection module 131 may have a general showerhead structure. Similarly, the third and fourth spray modules 133 and 134 may also have a general showerhead structure. Of course, the present invention is not limited by the drawings, and the shapes of the first, third, and fourth injection modules 131, 133, and 134 may have various forms, including a showerhead.

In addition, the second injection module 132 may have a double shower head structure to inject two kinds of precursor gases S2 and S3, and to prevent different precursor gases S2 and S3 from being mixed with each other.

Referring to the drawings, the second injection module 132 is divided into two independent buffer parts (301, 302) to provide two different precursor gases through separate flow paths, First to third shells 310, 320, and 330 having a plurality of injection holes 321 and 331 are engaged with each other. For example, the second injection module 132 may be formed in a cylindrical shape having a predetermined diameter and height and mounted to the gas injection unit 103. In addition, the first and second shells 310 and 320 form an exterior at the top and bottom of the second injection module 132, respectively, and the third shell 330 is formed inside the first and second shells 310 and 320. Two buffer parts 301 and 302 are formed by dividing the internal space horizontally into upper and lower portions. Here, for convenience of description, hereinafter, the buffer unit 301 of the upper part of the third shell 330 is referred to as the 'first buffer part 301' and the buffer part 302 of the lower part of the third shell 330 is referred to as 'first'. 2 buffer unit 302 '. However, the present invention is not limited by the drawings, and the shape and size of the second injection module 132 and the size and shape of the first to third shells 310, 320, and 330 may also be changed in various ways.

In addition, two precursor gas sources 412 and 413 are provided to provide two different precursor gases S2 and S3 in the second injection module 132, and alternately, precursor gases S2 and S3. Control valves 451 and 452 are provided on the supply flow paths of the second and third precursor gas sources 412 and 413 so as to provide a gas control unit 415 for controlling the operation of the control valves 451 and 452. It may be provided. For reference, reference numeral 411 denotes a first precursor gas supply source 411 that supplies the precursor gas S1 to the first injection module 131.

Meanwhile, the first and second shells 310 and 320 form an upper portion and a lower portion of the second injection module 132, and the third shell 330 is provided inside the first and second shells 310 and 320. As a result, the injection hole 331 is formed through the second shell 320 to divide the internal space into upper and lower portions and to provide the precursor gas of the first buffer unit 301 to the substrate 10. In addition, a plurality of injection holes 321 are formed in the second shell 320 to provide the precursor gas of the second buffer unit 302 to the substrate 10.

In detail, the first to third shells 310, 320, and 330 are formed with predetermined rim portions 1312, 1322, and 1332 so as to be engaged with each other on the edge portion, and the injection holes for spraying the precursor gas ( It consists of frames 1311, 1321, 1331 in the form of a predetermined plate on which 321, 331 are formed. Here, since the first shell 310 forms an upper surface of the second injection module 132, injection holes are not formed, and an injection hole 311 for injecting precursor gas into the first and second buffer units 301 and 302 is provided. , 312). In addition, injection passages 332 and 333 may be formed in the rim portions 1312 and 1332 of the first and third shells 310 and 330 to inject the precursor gas into the second buffer portion 302 at the injection hole 312. Can be.

The third shell 330 may have a shape corresponding to the first and second shells 310 and 330 so as to divide the inside of the second injection module 132 up and down in parallel. In addition, the third shell 330 is formed with a coupling boss (1333) protruding a predetermined length toward the bottom (ie, the direction in which the second shell 320 is coupled), and penetrates the coupling boss (1333) Injection holes 331 are formed. In addition, the coupling boss 1333 is formed to a thickness sufficient to form the injection hole 331, in order to directly supply the source gas provided to the first buffer unit 301 to the substrate 10, the injection hole 331 The end of the coupling boss 1333 is at least flush with the bottom surface of the second shell 320 (ie, the surface facing the substrate 10 in the second shell 320) so that it can be exposed into the process chamber 101. It is formed to a length that can be located on or protrude more than the second shell (320). Alternatively, an embodiment in which an end portion of the coupling boss 1333 is coupled to the inside of the coupling hole 1324 without protruding from the lower surface of the second shell 320 may be possible. In this case, the coupling boss 1333 is formed to have a length that can be inserted into the coupling hole 1324 at least, and communicates with the process chamber 101 inside the coupling hole 1324. Here, the coupling boss 1333 may be formed according to the pattern of the injection hole 331 of the third shell 330, and may be formed to have a one-to-one correspondence with the injection hole 331. However, the present invention is not limited by the drawings. A plurality of injection holes 331 may be formed in the coupling boss 1333, and may have various forms. It is also possible that the spacing between the coupling bosses 1333 is not only regularly arranged but also irregularly arranged or discontinuous.

In addition, a coupling hole 1324 into which the coupling boss 1333 of the third shell 330 is inserted is formed in the second shell 320. Here, the coupling hole 1324 is formed to have a size corresponding to the position corresponding to the coupling boss 1333 so that the coupling boss 1333 may be inserted, and is formed through the second shell 320. In addition, around the coupling hole 1324, the coupling boss 1333 is stably inserted and coupled to the coupling hole 1324, the coupling state can be stably maintained, and between the coupling boss 1333 and the coupling hole 1324. Coupling boss of the third shell 330 to prevent the source gas of the second buffer unit 302 from flowing out or the source gas inside the process chamber 101 into the third buffer unit 303 ( A guide boss 1323 coupled with the 1333 may be formed. In addition, a sealing member may be formed at the contact portion of the guide boss 1323 and the coupling boss 1333 to prevent the precursor gas inside the third buffer 303 from leaking between the guide boss 1323 and the coupling boss 1333. Not shown) may be provided. Here, the coupling hole 1324 is formed at a position that does not interfere with the injection hole 1321 of the second shell 320.

However, the present invention is not limited by the drawings, and the shapes of the first to third shells 310, 320, and 330 may be changed in various ways.

According to the present embodiment, since the plurality of precursor gases S2 and S3 are provided in the second injection module 132, a multi-component thin film including two or more components may be deposited using an atomic layer deposition apparatus. Since three or more kinds of precursor gases can be provided without increasing the number of branches of the injection unit 103, it is possible to effectively suppress the increase in the size of the gas injection unit 103.

In addition, since the second injection module 132 is divided into two buffer parts 301 and 302, and the precursor gases S2 and S3 are separated and flow and injected through independent flow paths, the second injection module 132 is inside the second injection module 132. At different precursor gases S2 and S3 may be mixed to prevent reaction byproducts from being generated.

Hereinafter, with reference to FIG. 5, the operation in the atomic layer deposition apparatus according to the present embodiment will be described. First, in the first injection module 131, the first precursor gas S1 is provided and chemisorbed onto the substrate 10 (S1).

Next, a purge gas P is provided to remove excess first precursor gas S1 that is not adsorbed onto the substrate 10 (S2).

Next, by providing a reactance R, the reaction product of the first precursor gas S1 and the reactance R reacts with the first precursor gas S1 adsorbed on the surface of the substrate 10 so that the reaction product of the substrate ( 10) is deposited (S3).

Next, purge gas P is again provided to remove residual reactance R and unreacted gas from the substrate 10 (S4).

Next, the second injection module 132 provides the second precursor gas S2 and chemically adsorbs the substrate 10 (S5).

Next, a purge gas P is provided to remove the excess second precursor gas S12 that is not adsorbed onto the substrate 10 (S6).

Next, the reaction product of the first precursor gas (S1) and the reactance (R) deposited in the previous step by providing a reactance (R) to react with the second precursor gas (S2) adsorbed on the surface of the substrate 10 and The reaction product of the first and second precursor gases S1 and S2 is deposited on the substrate 10 by the reaction between the second precursor gas S2 and the reactance R provided in this step (S7).

Next, purge gas P is again provided to remove residual reactance R and unreacted gas from the substrate 10 (S8).

Up to this point, as the substrate 10 rotates once, the precursor gas provided to the substrate 10 and the deposition process accordingly are provided. As the susceptor 102 rotates, a precursor gas is provided to the substrate 10 as described below, and a deposition process is performed.

That is, when the substrate 10 rotates to the position of the first injection module 131, the first precursor gas S1 is provided from the first injection module 131 and is chemically adsorbed onto the substrate 10 (S9).

Next, a purge gas P is provided to remove the excess first precursor gas S1 that is not adsorbed onto the substrate 10 (S10).

Next, a reaction of the first and second precursor gases S1 and S2 deposited in the previous step and the first precursor gas S1 provided in this step by providing a reactance R is performed on the surface of the substrate 10. The reaction product is deposited on the substrate 10 (S11).

Next, a purge gas P is provided to remove residual reactance R and unreacted gas from the substrate 10 (S12).

Next, the second injection module 132 provides the third precursor gas S2 and chemically adsorbs the substrate 10 (S13).

Next, a purge gas P is provided to remove the excess second precursor gas S12 that is not adsorbed on the substrate 10 (S14).

Next, by providing a reactance (R) to react with the second precursor gas (S2) adsorbed on the surface of the substrate 10, the first and second precursor gases (S1, S2) deposited in the previous step and in this step The provided third precursor gas S3 is reacted by the reactance R to deposit the reaction products of the first to third precursor gases S1, S2, and S3 on the substrate 10, thereby depositing the multicomponent thin film (S15). ).

Next, purge gas P is again provided to remove residual reactance R and unreacted gas from the substrate 10 (S16).

As described above, steps S1 to S16 become one deposition cycle in which one layer of a multi-component thin film is deposited on the substrate 10, and the substrate 10 is rotated to repeatedly perform steps S1 to S16 a plurality of times. Accordingly, a multi-component thin film having a predetermined thickness is deposited on the substrate 10.

As described above, the present invention has been described by specific embodiments such as specific components and the like, but the embodiments and the drawings are provided only to help a more general understanding of the present invention, and the present invention is limited to the above-described embodiments. In other words, various modifications and variations are possible to those skilled in the art to which the present invention pertains. Therefore, the spirit of the present invention should not be limited to the above-described embodiments, and all the things that are equivalent to or equivalent to the scope of the claims as well as the claims to be described later belong to the scope of the present invention.

1 is a longitudinal sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention;

2 is a plan view for explaining an example of a gas injection unit in the atomic layer deposition apparatus of FIG.

3 is a cross-sectional view of the injection module of the second injection zone in the gas injection unit of FIG.

4 is an exploded perspective view of main parts of the injection module of FIG. 3;

FIG. 5 is a flowchart illustrating an atomic layer deposition process of a multicomponent thin film using the gas injection unit of FIG. 2.

<Explanation of symbols for the main parts of the drawings>

10: substrate 100: atomic layer deposition apparatus

101: process chamber 102: susceptor

103: gas injection unit 130: injection zone

131, 132, 133, 134: injection module 135: exhaust line

141, 142, 143: source gas supply unit 301, 302: buffer unit

310, 320, 330: shell 311, 312: injection hole

321, 331: injection hole 332, 333: injection flow path

411, 412, 413: precursor gas source 415: gas control unit

451, 452: control valve 1311, 1321, 1331: frame

1312, 1322, 1332: rim portion 1323: guide boss

1324: joining hole 1333: joining boss

Claims (8)

In the gas injection unit of the atomic layer deposition apparatus, A first injection module having a plurality of injection modules each providing a plurality of different source gases to a substrate, the first injection module providing one kind of precursor gas; And A second injection module providing a different kind of precursor gas from the first injection module, and having a dual structure to provide two different types of precursor gases through independent flow paths; / RTI &gt; The second injection module, A first shell in which an injection hole for supplying the precursor gas is formed; A second shell which is combined with the first shell to form an appearance of the second injection module; And A third shell provided inside the first and second shells and dividing the internal space of the second injection module into two buffer parts parallel to each other in a vertical direction and having a plurality of injection holes; Gas injection unit of the atomic layer deposition apparatus for depositing a multi-component thin film comprising a. delete The method of claim 1, The third shell is formed with a plurality of first injection holes for providing a precursor gas in the first buffer portion on the third shell to the substrate, The second shell is a gas injection unit of an atomic layer deposition apparatus for depositing a multi-component thin film having a plurality of second injection holes for providing a precursor gas inside the second buffer portion below the third shell to the substrate. The method of claim 3, The third shell is provided with a coupling boss protruding downward to be coupled through the second shell, The gas injection unit of the atomic layer deposition apparatus for depositing the multi-component thin film formed through the coupling boss is the first injection hole. 5. The method of claim 4, The second shell is formed with a coupling hole into which the coupling boss is coupled, The gas injection unit of the atomic layer deposition apparatus for the deposition of the multi-component thin film formed in the region where the coupling hole does not overlap the second injection hole. The method of claim 5, The gas injection unit of the atomic layer deposition apparatus for guiding the coupling of the coupling boss around the coupling hole and the deposition of the multi-component thin film with the guide boss protruding. A process chamber providing a space in which the deposition process is performed; A susceptor provided in the process chamber to mount a plurality of substrates; And A plurality of injection modules provided on the substrate to provide a plurality of different source gases to the substrate, respectively; a first injection module and one type of precursor different from the first injection module to provide one kind of precursor gas; A gas injection unit including a second injection module providing a gas but having a dual structure to provide two different kinds of precursor gases through independent flow paths; / RTI &gt; The second injection module, A first shell in which an injection hole for supplying the precursor gas is formed; A second shell which is combined with the first shell to form an appearance of the second injection module; And A third shell provided inside the first and second shells and dividing the internal space of the second injection module into two buffer parts parallel to each other in a vertical direction and having a plurality of injection holes; Atomic layer deposition apparatus for depositing a multi-component thin film comprising a. The method of claim 7, wherein A precursor gas supply source for supplying a precursor gas to the second injection module is provided, and a control valve is provided on the flow path for supplying the precursor gas to the second injection module from the precursor gas supply, An atomic layer deposition apparatus for depositing a multi-component thin film having a gas control unit for controlling the operation of the control valve to alternately supply the precursor gas from the precursor gas supply source to the second injection module.

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