KR101126389B1 - Susceptor unit for atomic layer deposition apparatus - Google Patents

Abstract

An atomic layer deposition apparatus capable of chucking a substrate at negative pressure is disclosed. The susceptor unit of the atomic layer deposition apparatus capable of improving the chucking structure of the substrate and preventing deposition on the substrate is provided on the inside of the susceptor pocket to flow chucking gas along the back surface of the substrate. The substrate may be configured to include a negative pressure forming unit which forms a negative pressure on the lower surface of the substrate by the Bernoulli effect as the chucking gas communicates with the deposition preventing unit.

Atomic layer deposition apparatus, ALD, susceptor

Description

Susceptor unit of atomic layer deposition apparatus {SUSCEPTOR UNIT FOR ATOMIC LAYER DEPOSITION APPARATUS}

The present invention relates to a susceptor unit of an atomic layer deposition apparatus that improves the chucking method of a substrate in an atomic layer deposition apparatus.

In general, a method of depositing a thin film having a predetermined thickness on a substrate such as a semiconductor substrate or glass includes physical vapor deposition (PVD) using physical collision, such as sputtering, and chemical reaction using a chemical reaction. Chemical vapor deposition (CVD) and the like. Recently, as the design rules of semiconductor devices are drastically fined, thin films of fine patterns are required, and the step height of regions where thin films are formed is also very large. Due to this trend, the use of atomic layer deposition (ALD), which is capable of forming a very uniform pattern of atomic layer thickness very uniformly and has excellent step coverage, has been increasing.

ALD is similar to the general chemical vapor deposition method in that it uses chemical reactions between gas molecules. However, in contrast to conventional CVD in which a plurality of gas molecules are simultaneously injected into a process chamber to deposit a reaction product generated on a substrate, ALD injects a gas containing one source material into the process chamber to chemically process the heated substrate. The difference is that the product is deposited by chemical reaction between the source materials at the substrate surface by adsorbing and then injecting a gas containing another source material into the process chamber. These ALDs are widely attracting attention because they have the advantage of being able to deposit pure thin films having excellent step coverage characteristics and low impurity contents.

The atomic layer deposition apparatus includes a batch type in which a deposition process is performed simultaneously with a plurality of substrates stacked in a vertical direction, and a single type and a plurality of substrates in which a deposition process is performed on one substrate. It is divided into semi-batch type in which the deposition process is performed at the same time in a horizontally seated state. Here, the semi-batch type atomic layer deposition apparatus is used because of the superior throughput (throughput) than the single type, due to the advantage that the deposition quality is superior to the batch type.

In general, the semi-batch type atomic layer deposition apparatus has a region in which different kinds of source gases are injected, and the substrate is sequentially passed through each region by the high speed rotation of the gas injection unit or the susceptor. Chemical reactions occur between and the reaction products are deposited.

In the conventional atomic layer deposition apparatus, a substrate is simply mounted on a susceptor. During the deposition process, a predetermined upward airflow is generated on the susceptor surface due to the rotation of the susceptor, and the substrate is lifted from the susceptor. There is a problem to break away. However, the conventional atomic layer deposition apparatus has not been provided with a separate structure for chucking the substrate was not able to solve the problem of deposition defects that may occur due to the separation of the substrate or the displacement of the substrate.

In addition, during deposition, a predetermined thin film is deposited on the upper surface of the substrate by providing a source gas to the substrate. As the source gas diffuses from the front surface of the substrate to the rear surface of the substrate, a predetermined film may be deposited on the rear surface of the substrate. As described above, when the thin film is deposited on the back surface of the substrate, the flatness of the substrate becomes poor and causes a defect in the subsequent process, so that the deposition of the back surface of the substrate should be prevented.

Embodiments of the present invention for solving the above problems are to provide a susceptor unit of the atomic layer deposition apparatus that can prevent the separation of the substrate by chucking the substrate.

Another object of the present invention is to provide a susceptor unit of an atomic layer deposition apparatus capable of preventing deposition on the back surface of a substrate.

According to embodiments of the present invention for achieving the above object of the present invention, the susceptor unit of the atomic layer deposition apparatus capable of improving the chucking structure of the substrate and preventing deposition on the substrate, is provided in the susceptor pocket And a substrate backside deposition preventing portion for flowing the chucking gas along the back surface of the substrate and a negative pressure forming portion communicating with the substrate backside deposition preventing portion and forming a negative pressure on the substrate backside deposition preventing portion by the Bernoulli effect as the chucking gas flows. Can be configured.

In an embodiment, a plurality of communication holes may be formed to communicate the deposition preventing part and the negative pressure forming part with the substrate. The substrate backing prevention part may have an open shape to communicate with the back surface of the substrate at a bottom surface of the susceptor pocket, and may include a plurality of first straight flow paths radially formed along a radial direction of the susceptor pocket. have. And the negative pressure forming part is formed through the inside of the susceptor unit and includes a plurality of second straight flow paths radially formed along the radial direction of the susceptor unit. It can be formed to communicate two straight flow paths.

In addition, a plurality of substrate chucking holes may be formed at a position corresponding to the substrate edge in the susceptor pocket to communicate with the negative pressure forming portion to chuck the substrate edge by a Bernoulli effect.

In addition, a supply flow path for providing the chucking gas may be formed through the driving shaft of the susceptor unit through the substrate backside deposition preventing portion and the negative pressure forming portion.

On the other hand, according to other embodiments of the present invention for achieving the above object of the present invention, the susceptor unit of the atomic layer deposition apparatus is radially along the radial direction of the susceptor pocket on the bottom surface of the susceptor pocket. The substrate backside deposition prevention part including the first straight flow path formed includes a plurality of second straight flow paths radially formed along the radial direction of the susceptor unit, and communicates with the substrate backside prevention prevention part and the chucking gas flows. The Bernoulli effect may include a negative pressure forming portion for forming a negative pressure on the substrate backside preventing prevention portion and a plurality of communication holes communicating the substrate backside deposition preventing portion and the negative pressure forming portion.

In an embodiment, a first communication flow path formed along a circumference of the susceptor pocket is formed to communicate the first straight flow path, and the communication hole may be formed along the first communication flow path. The communication hole may be formed at a position shifted from a portion where the first linear flow path is connected to the communication hole. In addition, a plurality of substrate chucking holes may be formed at a position corresponding to the substrate edge in the susceptor pocket to communicate with the negative pressure forming portion to chuck the substrate edge by a Bernoulli effect. For example, the substrate chucking hole may have a shape inclined downward toward the negative pressure forming portion. In addition, the substrate chucking hole may be alternately formed with the communication hole along the circumferential direction of the susceptor pocket. The communication hole and the substrate chucking hole may be alternately formed at predetermined intervals, and the second straight passage may be formed with a plurality of linear passages communicating with the communication hole and the substrate chucking hole, respectively.

In an embodiment, a supply flow path may be formed to pass through the driving shaft of the susceptor unit to provide the chucking gas to the deposition preventing portion and the negative pressure forming portion of the substrate. The supply flow passage is formed through a center of the driving shaft and is formed at a position offset from the first supply flow passage and a first supply flow passage that provides a chucking gas to the substrate backside prevention prevention portion, and the negative pressure forming portion. It may comprise a second supply flow path for providing a gas.

As described above, according to embodiments of the present invention, by forming a flow path in which a negative pressure is formed inside the susceptor pocket to chuck the substrate, the substrate may be prevented from escaping from the susceptor pocket during the deposition process. It is possible to prevent the deposition failure due to the deviation of the.

In addition, by providing a predetermined chucking gas on the back surface of the substrate, even if the source gas diffuses to the back surface of the substrate, the chucking gas provided on the back surface of the substrate discharges the source gas, thereby preventing backside deposition on the substrate and causing defects due to backside deposition. Can be prevented.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited to or limited by the embodiments. In describing the present invention, a detailed description of well-known functions or constructions may be omitted for clarity of the present invention.

Hereinafter, an atomic layer deposition apparatus 100 according to embodiments of the present invention will be described in detail with reference to FIGS. 1 to 5B. For reference, FIG. 1 is a cross-sectional view of an atomic layer deposition apparatus 100 according to an embodiment of the present invention, FIG. 2 is a perspective view of the susceptor unit 102 in the atomic layer deposition apparatus 100 of FIG. 1, 3 is a plan view of the susceptor unit 102 of FIG. 2. 4 is a cross-sectional view of the susceptor unit 102 along the line I-I in FIG. 2, and FIGS. 5A and 5B are views of both sides of the susceptor unit 102 in the atomic layer deposition apparatus 100 of FIG. Cross-sectional views.

Referring to the drawings, an atomic layer deposition apparatus (ALD) 100 is provided in a process chamber 101 and a process chamber 101 that provide a space in which a deposition process is performed. It is configured to include a susceptor unit 102 to be seated and a showerhead unit 103 provided on the susceptor unit 102 to provide a source gas to the substrate 10. Here, in the atomic layer deposition apparatus 100, a semi-batch type in which a plurality of substrates 10 are horizontally disposed and a deposition process is performed at the same time may be used. However, the present invention is not limited by the drawings, and the atomic layer deposition apparatus 100 may be a single type in which a deposition process is performed by providing a source gas to a substrate 10 mounted horizontally. . In addition, since the detailed technical configuration of the atomic layer deposition apparatus 100 is not the gist of the present invention, a detailed description thereof will be omitted and only the main components will be briefly described.

In this embodiment, the substrate 10 to be deposited may be a silicon wafer. However, the object of the present invention is not limited to the silicon wafer, and the substrate 10 may be a transparent substrate including glass used for a flat panel display device such as a liquid crystal display (LCD) and a plasma display panel (PDP). . In addition, the shape and size of the substrate 10 is not limited by the drawings, and may have substantially various shapes and sizes, such as a circle and a rectangle. In addition, in the present embodiment, 'source gas' is a gas used in a deposition process, and reactant chemically adsorbed on the surface of the substrate 10 and a source gas or reactant containing a raw material of a thin film to be deposited. It may include a purge gas (purge gas) for removing the remaining gas.

The susceptor unit 102 is provided in the process chamber 101, and the susceptor plate 121 and the process chamber in which the susceptor pocket 123 is recessed to a predetermined depth so that the substrate 10 is seated in the horizontal direction are formed. The drive shaft 125 may be configured to be movable up and down inside the 101. For example, the susceptor pocket 123 has a size and shape corresponding to the substrate 10 so that one sheet of substrate 10 may be seated. Here, the shape of the susceptor unit 102 is not limited by the drawings and may be changed in various ways depending on the size and shape of the substrate 10.

Shower head unit 103 is provided on the susceptor unit 102 and a plurality of injection holes are formed to inject the source gas to the horizontally seated substrate 10, the shower head unit 103 Source gas supply unit 104 for supplying a source gas is connected.

The susceptor unit 102 may be provided with a substrate chucking portion 105 that chucks the substrate 10 and prevents deposition of a thin film due to diffusion of the source gas on the rear surface of the substrate 10. Here, the substrate chucking portion 105 includes a substrate backside deposition preventing portion 151 and a negative pressure forming portion 152. The substrate backside deposition prevention unit 151 prevents the deposition of the thin film by the source gas diffused to the backside of the substrate 10 by providing a chucking gas on the backside of the substrate 10. The negative pressure forming unit 152 chucks the substrate 10 by a Bernoulli effect. In detail, the negative pressure forming unit 152 has a flow passage communicating with the substrate backside deposition preventing unit 151, and when the chucking gas flows through the negative pressure forming unit 152 at a predetermined speed, the substrate underside deposition is prevented by the Bernoulli effect. As the pressure of the unit 151 drops, a negative pressure is formed in the flow path of the deposition preventing unit 151 if the substrate. The substrate back surface deposition preventing unit 151 and the negative pressure forming unit 152 are provided with first and second supply flow paths 515 and 516 through the drive shaft 125 to supply a predetermined chucking gas, respectively. First and second chucking gas supply units 161 and 162 for supplying chucking gas may be connected to the second supply flow paths 515 and 516. In FIG. 1, reference numeral 106 denotes a chucking gas supply unit 106 including first and second chucking gas supply units 161 and 162.

In detail, the substrate backside deposition preventing unit 151 may be formed inside the susceptor pocket 123 and may include a plurality of first linear flow paths 511 which form a negative pressure on the back surface of the substrate 10, and the substrate backside deposition preventing unit ( A first supply flow path 515 for supplying a predetermined chucking gas to the 151. For example, the first straight channel 511 is formed on the bottom surface of the susceptor pocket 123 so as to uniformly form a negative pressure on the back surface of the substrate 10, and has an open shape in communication with the back surface of the substrate 10. . In addition, the first linear flow path 511 radially along the radial direction of the susceptor pocket 123 so as to form a negative pressure uniformly on the back surface of the substrate 10 and uniformly provide a chucking gas to the back surface of the substrate 10. A plurality of first linear flow paths 511 are formed. In addition, the first supply flow path 515 may be formed to penetrate the driving shaft 125 to provide a predetermined chucking gas to the first straight flow path 511. Here, the chucking gas may be an inert gas such as nitrogen, argon or helium that does not chemically react with the source gas used in the deposition process.

In addition, the substrate back surface deposition preventing unit 151 has a first communication channel 513, which is a predetermined circular channel, formed at the edge of the susceptor pocket 123 so as to communicate the first straight channel 511. A plurality of communication holes 512 may be formed along the communication flow path 513 to communicate the substrate backside preventing portion 151 and the negative pressure forming portion 152. For example, the communication hole 512 is formed in the vertical direction to communicate with the negative pressure forming portion 152 of the lower, it may be formed at intervals of 90 ° along the first communication passage (513). In addition, the communication hole 512 may be formed on the first communication passage 513 instead of on the extension line of the first straight passage 511. That is, as shown in the drawing, the first linear flow path 511 has four first linear flow paths 511 formed in the cross shape in the susceptor pocket 123, and the communication hole 512 has the first straight line. It may be formed at a position shifted from the flow path 511 at 45 ° intervals. Here, the communication hole 512 is formed at a position shifted from the first linear flow path 511 in this way so that the suction force acting on the communication hole 512 acts uniformly on the first linear flow path 511. However, the present invention is not limited by the drawings, and the number, location, size, shape, etc. of the communication holes 512 may be changed in various ways.

Here, as shown in FIG. 5A, the lower end of the communication hole 512 communicates with the negative pressure forming unit 152, and communicates with the Bernoulli effect as the chucking gas flows along the negative pressure forming unit 152 at a predetermined speed. While the negative pressure is generated at the upper end portion of the hole 512 (ie, the portion communicating with the first communication flow path 513), the chucking gas of the first communication flow path 513 and the first straight flow path 511 communicates with the communication hole 512. Through the negative pressure forming unit 152 through. As the chucking gas flows on the back surface of the substrate 10 through the deposition preventing portion 151, the source gas introduced into the back surface of the substrate 10 may be removed, and a thin film is deposited on the back surface of the substrate 10. Can be prevented.

On the other hand, the substrate backing deposition preventing unit 151 is not formed in the entire susceptor pocket 123, but a portion of the outer periphery of the susceptor pocket 123 has an edge portion of the substrate 10 at the bottom of the susceptor pocket 123. The first linear flow path 511 and the first communication flow path 513 are not formed to be in close contact with the surface. In order to prevent the substrate 10 from being lifted up at the outer periphery of the susceptor pocket 123 in which the first linear flow path 511 and the first communication flow path 513 are not formed, the communication with the negative pressure forming part 152 is performed. Thus, a plurality of substrate chucking holes 514 may be formed in the edge portion of the substrate 10 to form a negative pressure. For example, the substrate chucking hole 514 may be formed alternately with the communication hole 512 by forming a plurality of substrate chucking holes 514 around the edge of the susceptor pocket 123. have. In addition, the substrate chucking holes 514 may be formed with four substrate chucking holes 514 at 90 ° intervals, and may be alternately formed with the communication holes 512 at 45 ° intervals.

Here, as illustrated in FIG. 5B, the substrate chucking hole 514 may have a Bernoulli effect caused by the chucking gas flowing along the negative pressure forming unit 152 to be similar to the communication hole 512. The edge portion of the substrate 10 may be chucked while negative pressure is generated at an end portion of the substrate 10. In addition, the substrate chucking hole 514 may be formed in an oblique direction and may be formed in a direction inclined downward toward the negative pressure forming unit 152. However, the number, position, shape, and size of the substrate chucking hole 514 are not limited by the drawings and may be changed in various ways.

The negative pressure forming unit 152 is formed through the susceptor plate 121 so as to form a negative pressure on the substrate back deposition prevention unit 151 as the chucking gas flows, and is supplied through the second supply flow path 516. The chucking gas and the chucking gas flowing from the substrate backside deposition preventing unit 151 may be formed to flow to the outside of the susceptor plate 121. For example, a plurality of second straight flow paths 531 are formed in the susceptor plate 121 at a predetermined depth in a radial direction along the radial direction of the susceptor plate 121, and penetrate the driving shaft 125. The second supply passage 516 may be formed. Here, the second straight channel 531 is formed to communicate with the communication hole 512 and the substrate chucking hole 514. That is, eight second straight flow paths 531 may be formed in the second straight flow path 531 at intervals of 45 °.

In addition, the first supply channel 515 may be formed through the center of the drive shaft 125, and the second supply channel 516 may be formed at an eccentric position in the center of the drive shaft 125. In addition, the negative pressure forming unit 152 is formed so as not to communicate with the first supply passage 515 formed through the driving shaft 125, and may communicate with the second supply passage 516 at an eccentric position. Here, in order to communicate the second supply flow path 516 and the second straight flow path 531, a circular second communication flow path 533 is formed at a position spaced apart from the center of the drive shaft 125 by a second supply flow path, and the second supply flow path is formed. The flow path 516 may be formed to communicate with the second communication flow path 533. However, the present invention is not limited by the drawings, and the position, size, and number of each flow path of the deposition preventing unit 151 and the negative pressure forming unit 152 may be substantially variously changed.

The operation of the atomic layer deposition apparatus 100 according to the embodiments of the present invention will be described with reference to FIGS. 5A and 5B as follows.

Specifically, the negative pressure forming unit 152 is supplied with chucking gas through the second supply passage 516 so that the chucking gas flows through the second communication passage 533 and the second straight passage 531 at a predetermined speed. do. In addition, the substrate backing prevention unit 151 may supply the chucking gas through the first supply passage 515, and the chucking gas flows through the first straight passage 511 and the first communication passage 513. Here, the negative pressure forming unit 152 flows the chucking gas at a higher flow rate and flow rate than the substrate lower surface deposition preventing unit 151 so as to form a negative pressure on the substrate lower surface deposition preventing unit 151. That is, the chucking gas flows at a higher flow rate and a higher flow rate than the inside of the first linear flow path 511 at a flow rate and a flow rate inside the second straight flow path 511. The pressure (negative pressure) relatively lower than the inside of the linear flow path 511 is generated.

In addition, since the negative pressure is formed in the communication hole 512 due to the Bernoulli effect of the chucking gas flowing along the negative pressure forming unit 152, the substrate back surface deposition preventing unit 151 has a first linear flow path 511 and a first communication flow path. The chucking gas flows from the center toward the outer periphery of the susceptor pocket 123 and removes the source gas diffused to the rear surface of the substrate 10 to prevent the thin film from being deposited on the rear surface of the substrate 10. have. In addition, failure of the substrate 10 due to deposition on the substrate can be prevented.

In addition, as the negative pressure is formed in the substrate chucking hole 514 by the Bernoulli effect of the chucking gas flowing along the negative pressure forming unit 152, the negative pressure acts on the portion corresponding to the edge of the substrate 10 to be chucked. Even when the susceptor unit 102 rotates at a high speed, the substrate 10 may be prevented from being shifted from the susceptor pocket 123 and shifted from the susceptor unit 123.

As described above, the present invention has been described by specific embodiments such as specific components and the like, but the embodiments and the drawings are provided only to help a more general understanding of the present invention, and the present invention is limited to the above-described embodiments. In other words, various modifications and variations are possible to those skilled in the art to which the present invention pertains. Therefore, the spirit of the present invention should not be limited to the above-described embodiment, and all the things that are equivalent to or equivalent to the scope of the claims as well as the following claims will belong to the scope of the present invention. .

1 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention;

FIG. 2 is a perspective view of a susceptor unit in the atomic layer deposition apparatus of FIG. 1; FIG.

3 is a plan view of the susceptor unit of FIG. 2;

4 is a cross-sectional view of the susceptor unit taken along line II in FIG. 2;

5A and 5B are cross-sectional views of both sides of the susceptor unit in the atomic layer deposition apparatus of FIG. 1.

<Explanation of symbols for the main parts of the drawings>

10: substrate 100: atomic layer deposition apparatus

101: process chamber 102: susceptor unit

103: shower head unit 104: source gas supply unit

105: substrate chucking section 106, 161, 162: chucking gas supply section

121: susceptor plate 123: susceptor pocket

125: drive shaft 151: substrate backside deposition prevention unit

152: negative pressure forming unit 511: first straight flow path

512: communication hole 513: first communication flow path

514: substrate chucking hole 515: first supply flow path

516: second supply flow path 531: second straight flow path

33: second communication path

Claims (15)

In a susceptor unit of an atomic layer deposition apparatus, A substrate back deposition prevention unit provided in the susceptor pocket to flow chucking gas along the back surface of the substrate; And A negative pressure forming unit communicating with the substrate lower deposition prevention unit to form a negative pressure on the substrate lower deposition prevention unit by a Bernoulli effect as the chucking gas flows; Susceptor unit of the atomic layer deposition apparatus comprising a. The method of claim 1, And a susceptor unit of an atomic layer deposition apparatus having a plurality of communication holes for communicating the substrate backside deposition preventing portion and the negative pressure forming portion. 3. The method of claim 2, The substrate back surface deposition preventing unit has an open shape in communication with the back surface of the substrate from the bottom surface of the susceptor pocket, the atomic layer deposition apparatus including a plurality of first linear flow path formed radially along the radial direction of the susceptor pocket Susceptor unit. The method of claim 3, The negative pressure forming part is formed through the inside of the susceptor unit and includes a plurality of second straight flow paths radially formed along the radial direction of the susceptor unit, The communication hole is a susceptor unit of an atomic layer deposition apparatus formed to communicate the first linear flow path and the second linear flow path. The method of claim 1, A susceptor unit of an atomic layer deposition apparatus having a plurality of substrate chucking holes communicating with the negative pressure forming portion at a position corresponding to the substrate edge in the susceptor pocket to chuck the substrate edge by a Bernoulli effect. The method of claim 1, A susceptor unit of an atomic layer deposition apparatus having a supply flow path for supplying the chucking gas to the substrate backside deposition preventing portion and the negative pressure forming portion through a drive shaft of the susceptor unit. In a susceptor unit of an atomic layer deposition apparatus, A substrate backing prevention part including a first linear flow path formed radially along a radial direction of the susceptor pocket at a bottom surface of the susceptor pocket; A negative pressure is formed in the substrate backside prevention portion by a Bernoulli effect as the chucking gas flows through a plurality of second straight flow paths radially formed along the radial direction of the susceptor unit and communicates with the substrate backside deposition prevention portion. Negative pressure forming unit; And A plurality of communication holes for communicating the substrate backside preventing portion and the negative pressure forming portion; Susceptor unit of the atomic layer deposition apparatus comprising a. The method of claim 7, wherein And a first communication flow path formed along a circumference of the susceptor pocket so as to communicate the first straight flow path, and the communication hole is formed along the first communication flow path. The method of claim 8, And the communication hole is a susceptor unit of an atomic layer deposition apparatus formed at a position shifted from a portion where the first linear flow path is connected to the communication hole. The method of claim 8, A susceptor unit of an atomic layer deposition apparatus having a plurality of substrate chucking holes communicating with the negative pressure forming portion at a position corresponding to the substrate edge in the susceptor pocket to chuck the substrate edge by a Bernoulli effect. The method of claim 10, The substrate chucking hole is a susceptor unit of an atomic layer deposition apparatus having a form inclined downward toward the negative pressure forming portion. The method of claim 10, And the substrate chucking hole is alternately formed with the communication hole along the circumferential direction of the susceptor pocket. The method of claim 12, The communication hole and the substrate chucking hole are alternately formed at a predetermined interval from each other, And the second linear flow path is a susceptor unit of an atomic layer deposition apparatus having a plurality of linear flow paths communicating with the communication hole and the substrate chucking hole, respectively. The method of claim 8, A susceptor unit of an atomic layer deposition apparatus having a supply flow path for supplying the chucking gas to the substrate backside deposition preventing portion and the negative pressure forming portion through a drive shaft of the susceptor unit. The method of claim 14, The supply passage, A first supply flow path formed through the center of the driving shaft and providing a chucking gas to the deposition preventing portion of the substrate; And A second supply flow passage formed at a position eccentric with the first supply flow passage and providing a chucking gas to the negative pressure forming portion; Susceptor unit of the atomic layer deposition apparatus comprising a.

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