KR200453911Y1 - Susceptor and atomic layer deposition apparatus having the same - Google Patents

Abstract

Disclosed are a susceptor and an atomic layer deposition apparatus including the same, which can be easily manufactured and effectively prevent deposition of a lower surface of a wafer seated on a susceptor. The atomic layer deposition apparatus according to the present invention includes a process chamber in which a plurality of wafers are accommodated and a deposition process is performed, a susceptor provided in the process chamber, and a plurality of wafers are seated, and a deposition gas provided on the process chamber. A shower head providing a deposition head, a deposition gas supply part supplying deposition gas to the shower head, and a driving shaft provided below the susceptor to rotate and lift the susceptor, wherein the susceptor includes: A recess formed concave in the surface, a seating portion accommodated in the recess, on which the wafer is seated, a support portion disposed between the recess and the seating portion, and a flow path formed by the support portion and through which the deposition gas passes, An inner circumferential surface of the recess and an outer circumferential portion of the seating portion are spaced apart from each other. According to the susceptor and the atomic layer deposition apparatus including the same according to the present invention, there is an effect of easily manufacturing a deposition gas discharge passage preventing the lower surface of the wafer from being deposited.

Atomic layer deposition system, susceptor, deposition gas, assembly

Description

Susceptor and atomic layer deposition apparatus having the same {SUSCEPTOR AND ATOMIC LAYER DEPOSITION APPARATUS HAVING THE SAME}

The present invention relates to a susceptor and an atomic layer deposition apparatus including the same, and more particularly, to a susceptor and an atomic layer deposition apparatus including the same, which are easy to manufacture and effectively prevent deposition on the back surface of the wafer.

In general, in order to deposit a thin film having a predetermined thickness on a wafer such as a semiconductor wafer or glass, physical vapor deposition (PVD) using physical collision such as sputtering and chemical vapor deposition using chemical reaction ( thin film manufacturing method using chemical vapor deposition (CVD) or the like is used.

As the design rule of the semiconductor device is drastically fine, a thin film of a fine pattern is required, and the step of the region where the thin film is formed is also very large. Accordingly, the use of an atomic layer deposition (ALD) method, which is capable of forming a very fine pattern of atomic layer thickness very uniformly and has excellent stem coverage, has been increasing.

The atomic layer deposition (ALD) method is similar to the conventional chemical vapor deposition method in that it uses chemical reactions between gas molecules. However, unlike conventional chemical vapor deposition (CVD) methods injecting a plurality of gas molecules into the process chamber at the same time to deposit the reaction product generated above the wafer onto the wafer, the atomic layer deposition method processes one gaseous material. It is different in that it is injected into the chamber and then purged to leave only the physically adsorbed gas on top of the heated wafer, and then inject other gaseous materials to deposit chemical reaction products that occur only on the top of the wafer. The thin film implemented through such an atomic layer deposition method has a high step coverage characteristic and has the advantage that it is possible to implement a pure thin film having a low impurity content, which is widely attracting attention.

Meanwhile, a semi-batch type atomic layer deposition apparatus capable of simultaneously depositing thin films on a plurality of wafers is disclosed. In the conventional semi-batch type atomic layer deposition apparatus, a plurality of wafers are disposed radially along the circumferential direction on the susceptor, and as the susceptor rotates, source gas is sequentially sprayed onto the wafer to perform the deposition process.

Preferably, the atomic layer deposition apparatus performs the desired deposition only on the upper side of the wafer. However, the deposition gas diffuses from the front of the wafer and moves around the wafer edge to face the bottom of the wafer. As a result, the lower surface of the wafer is deposited, which acts as a cause of wafer defects.

However, since the susceptor is made of a hard, brittle and expensive SiC material, it is difficult to process holes for discharging deposition gas into the susceptor to prevent deposition of the lower surface of the wafer.

Accordingly, an object of some embodiments of the present invention is to provide a susceptor capable of easily forming a flow path through which a deposition gas passing through a lower surface of a wafer is discharged, and an atomic layer deposition apparatus including the same.

In addition, another object according to an embodiment of the present invention is to provide a susceptor and an atomic layer deposition apparatus including the same that can effectively prevent the deposition of the lower surface of the wafer, thereby reducing the defect of the wafer.

In order to achieve the above objects, a susceptor for an atomic layer deposition apparatus according to an embodiment of the present invention, a recess formed in the surface of the susceptor, the recess is accommodated in the recess and the wafer is seated on top And a seating portion, and a flow path between the recess and the seating portion, through which the deposition gas passes, wherein the inner surface of the recess and the outer periphery of the seating portion are spaced apart from each other.

The susceptor for the atomic layer deposition apparatus may further include a support part disposed between the recess and the seating part, and a flow path may be formed by the support part.

Preferably, the support portion includes at least three support members, and the support member supports the seating portion at least three points or more.

The atomic layer deposition apparatus according to an embodiment of the present invention, a process chamber is accommodated a plurality of wafers are carried out the deposition process, a susceptor is provided in the process chamber is seated on the plurality of wafers, is provided on the process chamber A shower head providing a deposition gas to the wafer, a deposition gas supply unit supplying a deposition gas to the shower head, and a driving shaft provided below the susceptor to rotate and lift the susceptor, and the susceptor includes: A recess formed on the surface of the susceptor, a seating portion accommodated in the recess and a wafer seated thereon, a support portion disposed between the recess and the seating portion, and a flow path through which the deposition gas passes and formed by the support portion It includes, the inner peripheral surface of the recess and the outer peripheral portion of the seating portion may be formed spaced apart.

Preferably, a discharge hole through which the deposition gas is discharged is formed through the driving shaft, and the discharge hole may be connected to the flow path.

According to the susceptor and the atomic layer deposition apparatus including the same according to an embodiment of the present invention, there is an effect of easily forming a flow path through which the deposition gas passing through the lower surface of the wafer is discharged.

Further, according to the susceptor and the atomic layer deposition apparatus including the same according to an embodiment of the present invention, a recess is formed in the susceptor without hole processing in an expensive and brittle susceptor, and a separate seating part By forming the deposition gas discharge passage by combining, there is an effect that can reduce the manufacturing cost and simplify the manufacturing process.

In addition, according to the susceptor and the atomic layer deposition apparatus including the same according to an embodiment of the present invention, the lower surface of the wafer may be effectively prevented to reduce wafer defects.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited or limited by the embodiments. For reference, the same numbers in this description refer to substantially the same elements and can be described with reference to the contents described in the other drawings under the above-mentioned rules, and the contents which are judged to be obvious to the person skilled in the art or repeated can be omitted.

1 is a longitudinal cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention, Figure 2 is a cross-sectional view showing a portion of a susceptor according to an embodiment of the present invention, Figure 3 is a recess of the susceptor , A seating part, and a support part are top views.

Hereinafter, an atomic layer deposition apparatus 100 according to an embodiment of the present invention will be described in detail with reference to FIGS. 1 to 3.

Referring to FIG. 1, the atomic layer deposition apparatus 100 includes a process chamber 110 in which a wafer is accommodated and a deposition process is performed, a susceptor 120 in which the wafer is mounted, and a process chamber in which the wafer is seated. The shower head 130 is provided on the upper portion 110 to provide the deposition gas to the wafer, and the deposition gas supply unit 140 to supply the deposition gas to the shower head 130.

The wafer may be a silicon wafer. However, the object of the present invention is not limited to a silicon wafer, and the wafer may be a transparent substrate including glass used for a flat panel display device such as a liquid crystal display (LCD) and a plasma display panel (PDP). In addition, the wafer is not limited in shape and size by drawing, and may have substantially various shapes and sizes, such as circular and rectangular plates.

The process chamber 110 accommodates a wafer and provides a space in which a deposition process is performed. The process chamber 110 includes a susceptor 120 on which a wafer is seated and a shower head 130 that provides deposition gas to a wafer. It is provided.

The susceptor 120 is provided in the process chamber 110, and a plurality of wafers are seated. Here, the susceptor 120 is a semi-batch type having excellent throughput. One surface of the wafer is disposed on the upper surface of the susceptor 120 so that a deposition process may be performed by simultaneously receiving a plurality of wafers. It is seated but disposed radially along the circumferential direction of the susceptor 120. For example, the susceptor 120 may be seated with six wafers spaced apart from each other by a predetermined interval.

A drive shaft 150 for rotating the susceptor 120 is provided below the susceptor 120 so that the wafer revolves about the center point of the susceptor 120 as the susceptor 120 rotates. In addition, the driving shaft 150 moves the susceptor 120 up and down a predetermined distance in the process chamber 110.

The showerhead 130 is provided above the process chamber 110 to provide deposition gas to the wafer surface seated on the susceptor 120.

The deposition gas includes a source gas containing a material constituting the thin film to be formed on the wafer surface and a purge gas for purging the source gas. In addition, according to the present embodiment, different kinds of gases are used as the source gas, which reacts with each other on the wafer surface to form a thin film material, and the purge gas does not chemically react with the source gas, the wafer, and the thin film formed on the wafer. Do not use stable gas.

One side of the shower head 130 is connected to the deposition gas supply unit 140 for supplying the deposition gas to the shower head 130.

Hereinafter, the susceptor 120 according to an embodiment of the present invention will be described in detail with reference to FIGS. 1 to 3.

The susceptor 120 includes a recess 122, a seating portion 124, a support 126, and a flow path 128.

The recess 122 is a circular recess having a diameter slightly larger than the diameter of the wafer to accommodate the wafer. The recess 122 is recessed in the surface of the susceptor 120.

The seating portion 124 is a separate member that is received inside the recess 122. The seating portion 124 is a disk-shaped member that is formed to be smaller than the diameter of the recess 122 to be received into the recess 122. The seating portion 124 is accommodated in the recess 122, and the wafer is seated on the seating portion 124.

The seating portion 124 is received in the recess 122 so that the top surface is located inside the recess 122. That is, the upper surface of the seating portion 124 is formed lower than the surface of the susceptor 120, whereby the wafer can be stably seated on the seating portion 124 even with the rotation of the susceptor 120.

The seating portion 124 is coupled into the recess 122 so as to be spaced apart by a predetermined interval between the inner circumferential surface of the recess 122 and the outer peripheral edge of the seating portion 124. The deposition gas may move to the flow path 128 formed under the seating portion 124 through the gap.

A predetermined space is formed between the lower portion of the seating portion 124 and the recess 122, and the space is deposited gas moved through the gap between the inner circumferential surface of the recess 122 and the outer circumferential edge of the seating portion 124. A flow path 128, which is an exit passage, is configured.

Specifically, since the deposition gas may be discharged through the flow path 128, the flow path 128 may prevent the deposition gas from moving to the bottom surface of the wafer, thereby avoiding deposition on the bottom surface of the wafer.

A flow path 128 formed between the bottom of the seating portion 124 and the recess 122 is formed by the support 126. The support part 126 is a pillar member for supporting the seating part 124 at a position higher than the recess 122, and may include a plurality of support members.

As shown in FIG. 3, three or more support members of the support part 126 are provided to allow the seating part 124 to be stably supported. In this embodiment, six support members are arranged at equal intervals on the edge of the recess 122 along the circumferential direction. That is, the six support members are arranged to be spaced apart from each other by 60 degrees in the circumferential direction.

A discharge hole 152 through which the deposition gas is discharged is formed in the drive shaft 150. The discharge hole 152 is connected to the flow path 128 of the susceptor 120, so that the deposition gas passing through the flow path 128 may be discharged to the outside through the discharge hole 152.

Hereinafter, a manufacturing process of the susceptor 120 of the atomic layer deposition apparatus 100 according to an embodiment of the present invention will be described.

First, the surface of the susceptor 120 is processed to form a recess 122. A passage through which the deposition gas may move from the sidewall of the recess 122 to the previously formed discharge hole 152 is processed, and the support 126 is coupled to the lower surface of the recess 122.

When the coupling of the support 126 is completed, the seating portion 124 is coupled to the support 126. After the plurality of recesses 122 are formed along the circumferential direction of the susceptor 120, the process is repeated.

The atomic layer deposition apparatus 100 according to the present invention does not form a flow path through which the deposition gas is discharged after integrally forming the susceptor, but manufactures separate components and assembles the flow path through which the deposition gas is discharged. Since it is to form, there is an effect that can reduce the cost and effort according to the brittle and hard susceptor processing process.

By using the atomic layer deposition apparatus 100 according to the present invention, there is an advantage that can effectively prevent the deposition of the lower surface of the wafer can reduce the defect of the wafer.

As described above, the present invention has been described with reference to a preferred embodiment of the present invention, but those skilled in the art various modifications and changes of the present invention without departing from the spirit and scope of the present invention described in the claims below I can understand that you can.

1 is a longitudinal sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention;

2 is a cross-sectional view showing a portion of a susceptor according to an embodiment of the present invention;

3 is a plan view of the recess, the seating portion and the support of the susceptor according to an embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

100: atomic layer deposition apparatus 110: process chamber

120: susceptor 122: recess

124: seating portion 126: support portion

128: Euro 130: showerhead

140: deposition gas supply unit 150: drive shaft

152: discharge hole

Claims (5)

In a susceptor for an atomic layer deposition apparatus, A recess formed in the surface of the susceptor; A seating portion accommodated in the recess and on which a wafer is seated; And A flow path positioned between the recess and the seating portion and through which the deposition gas passes; Including, An inner circumferential surface of the recess and an outer circumferential portion of the seating portion are spaced apart from each other. The method of claim 1, And a support part disposed between the recess and the seating part, wherein the flow path is formed by the support part. The method of claim 2, And the support portion includes at least three support members, and the support member supports the seating portion at a position of at least three points or more. A process chamber in which a plurality of wafers are accommodated and a deposition process is performed; A susceptor provided in the process chamber to seat a plurality of wafers; A shower head provided on the process chamber to provide deposition gas to the wafer; A deposition gas supply unit supplying a deposition gas to the shower head; And A drive shaft provided below the susceptor to rotate and lift the susceptor; Including, The susceptor, A recess formed in the surface of the susceptor; A seating portion accommodated in the recess and on which a wafer is seated; A support disposed between the recess and the seating portion; And A flow path formed by the support and through which the deposition gas passes; Including, And an inner circumferential surface of the recess and an outer circumferential portion of the seating portion are spaced apart from each other. The method of claim 4, wherein And a discharge hole through which the deposition gas is discharged is formed through the driving shaft, and the discharge hole is connected to the flow path.

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