KR20110006874U - Apparatus for multi layer deposition for atomic layer deposition - Google Patents

Abstract

An atomic layer deposition apparatus capable of depositing multiple films is disclosed. A semi batch atomic layer deposition apparatus for depositing multiple films includes a gas injection unit in which a plurality of injection modules are provided for providing a deposition gas, and at least one of the injection modules provides two or more precursor gases. Different independent flow paths may be formed.

Atomic layer deposition, ALD, precursor, multilayer

Description

Atomic layer deposition apparatus for depositing multiple films {APPARATUS FOR MULTI LAYER DEPOSITION FOR ATOMIC LAYER DEPOSITION}

The present invention relates to an atomic layer deposition apparatus, to provide an atomic layer deposition apparatus capable of depositing multiple films.

In general, a method of depositing a thin film having a predetermined thickness on a substrate such as a semiconductor substrate or glass includes physical vapor deposition (PVD) using physical collision, such as sputtering, and chemical reaction using a chemical reaction. Chemical vapor deposition (CVD) and the like. Recently, as the design rules of semiconductor devices are drastically fined, thin films of fine patterns are required, and the step height of regions where thin films are formed is also very large. Due to this trend, the use of atomic layer deposition (ALD), which is capable of forming a very uniform pattern of atomic layer thickness very uniformly and has excellent step coverage, has been increasing.

ALD is similar to the general chemical vapor deposition method in that it uses chemical reactions between gas molecules. However, in contrast to conventional CVD in which a plurality of gas molecules are simultaneously injected into the chamber to deposit the reaction product generated on the substrate, ALD injects a gas containing one source material into the chamber to chemisorb the heated substrate. There is a difference in that a product by chemical reaction between the source materials is deposited on the substrate surface by injecting a gas containing another source material into the chamber. These ALDs are widely attracting attention because they have the advantage of being able to deposit pure thin films having excellent step coverage characteristics and low impurity contents.

A semi-batch type is disclosed in which a deposition process is simultaneously performed on a plurality of substrates to improve throughput in an atomic layer deposition apparatus. In general, the semi-batch type atomic layer deposition apparatus has a region in which different kinds of deposition gases are injected, and the substrate is sequentially passed through each region by the high speed rotation of the gas injection unit or the susceptor. Chemical reactions occur between and the reaction products are deposited.

On the other hand, while the conventional atomic layer deposition apparatus is effective in depositing a single component oxide or nitride, only one type of thin film can be formed, and it is difficult to deposit multiple films in which a plurality of thin films are stacked.

In addition, similar to the conventional method, the gas injection unit may include a region in which each deposition gas is injected, and the deposition gases may be supplied and deposited in a pulse form for one cycle. However, in the case of such an atomic layer deposition apparatus, as the number of deposition gases increases, the number of injection modules increases in the gas injection unit, thereby increasing the size of the gas injection unit and the deposition apparatus. On the other hand, in order to arrange the increased number of injection modules without increasing the size of the existing gas injection unit, when the size of the injection module itself is reduced, the increase in the size of the deposition apparatus can be suppressed, but the area of the injection module is sufficient. Since it is difficult to secure and the area of the purge gas injection area is also reduced, it is difficult to secure sufficient injection time of the deposition gas in the injection module, and in particular, it is difficult to properly operate the gas separation effect between the injection modules, so that the deposition gas is mixed. There is a problem. As such, when the area of the injection module is reduced, problems such as insufficient contact time of the deposition gas and mixing of the deposition gas may cause a low deposition efficiency and a decrease in film quality.

Embodiments of the present invention for solving the above-described problems can provide a atomic layer deposition apparatus capable of depositing multiple films, suppressing the increase in the size of the deposition apparatus and improving the separation effect of the deposition gas to prevent film degradation. It is for.

According to embodiments of the present invention for achieving the above object of the present invention, a semi batch type atomic layer deposition apparatus for depositing a multi-layer, the gas injection formed with a plurality of injection modules for providing a deposition gas And a unit, wherein at least one of the injection modules may be formed with different independent flow paths to provide two or more precursor gases.

In an embodiment, a plurality of deposition gas supply units supplying the deposition gas to the injection module may be connected, and the deposition gas supply unit may be configured to selectively supply the deposition gas to the injection module by a valve. In addition, the supply of the deposition gas may form a plurality of thin films in-situ in a continuous process inside the process chamber.

As seen above, according to the embodiments of the present invention, the in-situ process in the fourth quarter or eight quarter gas injection unit by having a double injection module that can inject different deposition gases through separate flow paths It is possible to deposit multiple films.

In addition, even if the number of constituent elements of the thin film is increased, the area of the injection module can be secured by a predetermined size or more, and the size increase of the gas injection unit and the atomic layer deposition apparatus can be suppressed.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited or limited by the embodiments. In describing the present invention, a detailed description of known functions or configurations may be omitted to clarify the gist of the present invention.

Hereinafter, an atomic layer deposition apparatus and a gas injection unit 103 according to an embodiment of the present invention will be described in detail with reference to FIG. 1. For reference, FIG. 1 is a plan view illustrating an example of a gas injection unit 103 for explaining an atomic layer deposition apparatus according to an embodiment of the present invention.

Referring to the drawings, an atomic layer deposition apparatus (ALD) includes a process chamber 101, a susceptor (not shown), and a gas injection unit 103.

For reference, in the atomic layer deposition apparatus (ALD) described as an example in the present embodiments, deposition is simultaneously performed on a plurality of substrates 10 in order to improve throughput and quality. A predetermined thin film is deposited as the surface of 10 passes through a region in which different kinds of gases injected from the gas injection unit 103 are sprayed while being processed while being supported in parallel with the gas injection unit 103. A semi-batch type of type may be used. Here, the detailed technical configuration of the general components of the atomic layer deposition apparatus is understood from the known technology and are not the gist of the present invention, and thus detailed description and illustration will be briefly described only the main components.

In addition, in the present embodiment, the substrate 10 to be deposited may be a silicon wafer. However, the object of the present invention is not limited to the silicon wafer, and the substrate 10 may be a transparent substrate including glass used for a flat panel display device such as a liquid crystal display (LCD) and a plasma display panel (PDP). . In addition, the shape and size of the substrate 10 is not limited by the drawings, and may have substantially various shapes and sizes, such as a circle and a rectangle.

In addition, in the present embodiment, 'source gas' refers to gases including a source material for depositing a predetermined thin film, and includes a precursor gas and a precursor gas including constituent elements forming the thin film. It may include a reactant (reactant) to form a thin film according to a predetermined reaction product by chemical reaction with and a purge gas (remove gas) to remove the unreacted gas and residual gas, such as precursor gas and the reaction gas.

The susceptor (not shown) is formed such that the substrate 10 is seated in a horizontal direction and revolves at a predetermined speed. For example, six substrates 10 are formed to be seated at a predetermined interval along the circumferential direction of the susceptor. Can be.

The gas injection unit 103 is formed to provide two or more different precursor gases so as to deposit the thin film. In particular, the gas injection unit 103 may provide the deposition gas for the same time with respect to the revolving substrate 10. In 103, regions in which each deposition gas is injected may be divided in the same manner. For example, the gas injection unit 103 includes a plurality of injection modules 131, 132, 133, and 134 through which different types of deposition gases (in this embodiment, precursor gas, purge gas, and reaction gas) are injected, respectively. In other words, it may have a fan shape divided at the same angle with respect to the center of the gas injection unit 103. An exhaust line 135 may be provided to discharge the exhaust gas from the upper portion of the substrate 10 through the gas injection unit 103 along the boundary of each injection module 131, 132, 133, and 134. Here, the injection module 131, 132, 133, 134 is defined as an area in which a plurality of injection holes (not shown) are formed in which deposition gas is injected, and in FIG. 2, the injection modules 131, 132, 133 and 134 are shown in solid lines. However, the present invention is not limited by the drawings and the shape and size of the injection module 131, 132, 133, 134 may be changed in various ways.

The present embodiment is provided with a dual injection module 131 that provides two or more deposition gases to form multiple films in-situ in the same process chamber 101. For example, the gas injection unit 103 may be divided into four regions that provide different deposition gases, that is, a quarter shape, and the first injection module 131 may have a dual structure to provide two kinds of precursor gases. The third injection module 133 is provided with a reaction gas, and the second and fourth injection modules 132 and 134 are provided with a purge gas.

In addition, in this embodiment, a case where a multi-layer such as ONO (Oxide / Nirtride / Oxide) is formed will be described as an example. However, the present invention is not limited by the drawings, and may be applied to an atomic layer deposition apparatus for forming various multi-layers. The first injection module 131 is provided with two deposition gas supply units 141 and 142 to provide an oxygen precursor and a nitrogen precursor gas, and each of the deposition gas supply units 141 and 142 is provided with valves 141a and 142a. As the valves 141a and 142a are opened and closed, deposition gas may be selectively supplied to the first injection module 131. Here, reference numeral 104 denotes the deposition gas supply units 141, 142, 143, and 144 that supply the deposition gas to the respective injection modules 131, 132, 133, and 134 in the gas injection unit 103, respectively.

Hereinafter, an atomic layer deposition method according to embodiments of the present invention will be described. In the present embodiment, for example, forming three layers is described as an example. However, the present embodiment is not limited to the drawings and the number of films to be deposited may vary substantially.

First, a first precursor gas is provided and the first thin film is deposited to a predetermined thickness using an atomic layer deposition method. A second precursor gas is provided on the first thin film and the first thin film is deposited according to the atomic layer deposition method. The second thin film may be formed on a predetermined thickness thereon. Next, when deposition of the second thin film is completed, the third thin film may be formed by providing the first precursor gas or another third precursor gas. Here, the third thin film may be a thin film having the same composition as the first thin film or a thin film having another composition.

According to the present embodiments, in the atomic layer deposition method for forming a multilayer, a plurality of thin films may be formed in-situ in a continuous process in the same process chamber 101 of an atomic layer deposition apparatus.

In the present invention as described above has been described by the specific embodiments, such as specific components and limited embodiments and drawings, but this is provided only to help a more general understanding of the present invention, the present invention is limited to the above-described embodiments In other words, various modifications and variations are possible to those skilled in the art to which the present invention pertains. Therefore, the spirit of the present invention should not be limited to the above-described embodiment, and all the things that are equivalent to or equivalent to the scope of the claims as well as the following claims will belong to the scope of the present invention.

1 is a longitudinal sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

10: substrate 101: process chamber

103: gas injection unit

141, 142, 143, 144: gas supply part 141a, 141b: valve

131, 132, 133, 134: injection module 135: exhaust line

136: exhaust pump

Claims (3)

In the atomic layer deposition apparatus, A gas injection unit having a plurality of injection modules for providing a deposition gas, At least one of the injection module is an atomic layer deposition apparatus for forming a multi-layer having different independent flow path to provide two or more kinds of precursor gas. The method of claim 1, A plurality of deposition gas supply unit for supplying a deposition gas to the injection module is connected, And the deposition gas supply unit selectively supplies the deposition gas by a valve. The method of claim 2, And supplying the deposition gas to form a plurality of thin films in-situ in a continuous process in a process chamber.

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