KR101828989B1 - Substrate processing apparatus - Google Patents

Abstract

The present invention relates to a substrate processing apparatus, comprising: a chamber in which a space is formed; A top lead provided at an upper portion of the chamber; A substrate support rotatably installed in the chamber to support a plurality of substrates; And a gas injection device provided on the substrate supporting part to inject gas into the substrate, wherein the gas injection device includes a plurality of gas injection units for radially injecting gas onto the substrate supporting part, At least one of the gas injection units of the gas injection unit is formed longer in the center direction of the top lead, so that the uniformity and reliability of the thin film can be improved.

Description

[0001] Substrate processing apparatus [

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of improving uniformity and reliability of a thin film.

As the scale of the semiconductor device is gradually reduced, the demand for the polar thin film is increasing and the problem of the step coverage becomes increasingly serious as the contact hole size is reduced. Atomic layer deposition (ALD) has been used as a deposition method to overcome various problems.

The principle of the atomic layer thin film deposition method will be briefly described as follows. When the substrate is exposed to the source gas supplied into the chamber, the source gas is chemically adsorbed on the substrate surface through reaction with the substrate surface to form a monolayer. However, when the surface of the substrate is saturated with the source gas, the source gas above the monolayer can not form a chemisorption state due to the non-reactivity between the same ligands, and is in a state of physically adsorbed. Thereafter, when the substrate is exposed to the purge gas, the raw material gas in the physically adsorbed state existing on the substrate is removed by the purge gas. Then, when the substrate is exposed to the reaction gas, a second layer is formed while the reaction gas is chemically adsorbed on the surface of the substrate and the ligand intermixes with the reaction gas, and the reactive gas, which has not reacted with the first layer, When the substrate is again exposed to the purge gas, it is removed by the purge gas. And the surface of this second layer is in a state capable of reacting with the source gas. The above process repeats several cycles until one cycle is formed and a thin film having a desired thickness is formed on the substrate.

Fig. 1 is a schematic sectional view of a conventional substrate processing apparatus, and Fig. 2 is a bottom view of the gas injection apparatus of Fig. 1. Fig.

1, the substrate processing apparatus includes a chamber 10 in which a space 12 is formed, a substrate support (not shown) rotatably installed in the chamber 10 and on which a plurality of substrates W are mounted 20). A gas injection device 30 for supplying a gas toward the substrate W is provided at an upper portion of the chamber 10.

The gas injection device 30 includes a plurality of gas injection units as shown in Fig. A central injection unit 34 in which a plurality of gas injection holes are formed is coupled to the center of the lower portion of the top lead 32 and a central injection unit 34 is connected to a lower portion of the top lead 32. [ A plurality of process gas injection units 36S, 36R and a purge gas injection unit 36P, each of which is formed in the shape of a sector along the circumferential direction of the combustion chamber 34 and in which a plurality of gas injection holes are formed, A plurality of gas injection holes 31 are formed in the top lead 32, and the gas injection holes 31 are communicated with the gas injection holes formed in the respective injection units.

The substrate supporting unit 20 is installed to be able to move up and down in the chamber 10 so that a plurality of substrates W can be sequentially supplied with gas injected from each of the injection units during thin film deposition. For example, the substrate W is supplied with the raw material gas at the start of the process, and sequentially supplied with the purge gas, the reactive gas, and the purge gas, and the thin film is deposited.

However, it is preferable that the raw material gas and the reactive gas are injected from the gas jetting body and then remain on the substrate for a predetermined time to smoothly form the thin film. However, in the process of forming the thin film, the raw material gas and the reactive gas are rapidly discharged to the outside through the exhaust passage formed at the edge of the substrate supporting portion. In addition, since the purge gas injected from the central injection unit of the substrate processing apparatus pushes the raw material gas and the reactive gas toward the edge of the substrate supporting portion, the flow rate of the raw material gas and the reactive gas substantially supplied to the central portion of the substrate supporting portion is reduced, And the residence time of the reaction gas becomes short. Therefore, the thin film is not smoothly deposited on the inner side of the substrate adjacent to the central portion of the substrate supporting portion, so that it is difficult to deposit a thin film having a desired thickness over the entire substrate, thereby lowering the uniformity of the thin film, .

KR 1028408 B

The present invention provides a substrate processing apparatus capable of improving deposition uniformity of a thin film.

The present invention provides a substrate processing apparatus capable of improving the quality and productivity of a thin film.

A substrate processing apparatus according to an embodiment of the present invention includes: a chamber in which a space is formed; A top lead provided at an upper portion of the chamber; A substrate support rotatably installed in the chamber to support a plurality of substrates; And a gas injection device provided on the substrate supporting part to inject gas into the substrate, wherein the gas injection device includes a plurality of gas injection units for radially injecting gas onto the substrate supporting part, At least one of the gas injection units of the gas discharge unit is formed longer in the center direction of the top lead.

Wherein the plurality of gas injection units comprise at least one raw material gas injection unit having a plurality of raw material gas injection holes for injecting a raw material gas, at least one reaction gas injection unit having a plurality of reaction gas injection holes for injecting reactive gas, And a plurality of purge gas injection units disposed between the gas injection unit and the reaction gas injection unit and provided with a plurality of purge gas injection holes for injecting the purge gas.

At least one of the source gas injection units and the reaction gas injection units may be formed to be 10 to 20% longer than the substrate diameter of the purge gas injection unit.

Each of the plurality of gas injection units may be coupled to a lower portion of the top lead to form a gas diffusion space, and a plurality of gas injection holes may be formed on the lower surface.

Wherein the gas injection device includes a central injection unit coupled to a lower central portion of the top lead to form a gas diffusion space and having a plurality of gas injection holes formed on a lower surface thereof, Or may be coupled to form a circular shape along the circumferential direction.

The plurality of gas injection units may be formed by a plurality of pipes passing through at least any one of the chamber and the top lead, arranged in parallel with the substrate support, and having a plurality of gas injection holes formed on a lower surface thereof.

The gas ejection apparatus may include a central ejection unit for ejecting a gas to a central portion of the substrate support, and the plurality of gas ejection units may be arranged radially around the central ejection unit.

At least one of the plurality of source gas injection holes and reaction gas injection holes may be formed closer to the center of the top lead than the purge gas injection holes.

The plurality of source gas injection holes or the plurality of reaction gas injection holes may be formed along the radial direction of the substrate supporting portion and may be formed to inject more gas inward than the outside along the radial direction of the substrate supporting portion.

Wherein at least one groove is formed in a side surface of the central injection unit adjacent to the source gas injection units or the reaction gas injection units and at least one of the source gas injection units and the reaction gas injection units A part of which may be inserted and overlapped with the central injection unit.

Wherein the central injection unit is formed with at least one groove having a step on a bottom surface and a side surface portion adjacent to at least one of the material gas injection units and the reaction gas injection units, At least one end of at least one of the injection units and the reaction gas injection units is formed with a step corresponding to the groove, and at least one of the source gas injection units and the reaction gas injection units The end portion may be inserted and overlapped with the central injection unit.

Wherein the central injection unit is formed with a plurality of spaces so as to form a space in a portion adjacent to at least any one of the material gas injection units and the reaction gas injection units, and the material gas injection units and the reaction gas injection units At least one of the ends may be disposed in the space.

The substrate processing apparatus according to the embodiment of the present invention can supply the raw material gas and the reactive gas at a sufficient flow rate to the central portion of the substrate supporting portion by regulating the formation position of the gas injection hole. Further, the residence time of the source gas and the reactive gas at the central portion side of the substrate supporting portion can also be increased. Accordingly, the thin film is smoothly deposited over the entire area of the substrate, thereby forming a thin film having a desired thickness over the entire substrate. Accordingly, the uniformity and quality of the thin film can be improved, and reliability of the device formed using the thin film can be improved. In addition, since the defective deposition of the thin film can be suppressed, the productivity can also be improved.

1 is a schematic cross-sectional view of a substrate processing apparatus according to the prior art;
2 is a bottom view of the gas injection device shown in Fig.
3 is a schematic cross-sectional view of a substrate processing apparatus according to a first embodiment of the present invention;
Fig. 4 is a bottom view showing an embodiment of the gas injection device applied to Fig. 3; Fig.
Fig. 5 is a view showing a modification of Fig. 4; Fig.
6 and 7 are views showing a connection structure of the central injection unit and the injection unit.
8 is a schematic cross-sectional view of a substrate processing apparatus according to a second embodiment of the present invention.
Fig. 9 is a bottom view showing an embodiment of the gas injection device applied to Fig. 8; Fig.
10 is a view showing a thickness of a thin film deposited using a substrate processing apparatus according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

FIG. 3 is a schematic cross-sectional view of a substrate processing apparatus according to a first embodiment of the present invention, FIG. 4 is a bottom view showing an embodiment of a gas injection device applied to FIG. 3, and FIG. 5 is a modification of the gas injection device .

Referring to FIG. 3, a substrate processing apparatus according to the first embodiment of the present invention includes a chamber 100, a substrate support 120, and a gas injection device.

The chamber 100 includes a main body 110 having an opened upper portion and a top lead 112 provided at an upper portion of the main body 110 so as to be openable and closable and having a plurality of gas inlet openings 114 formed therein. When the top lead 112 is coupled to the top of the main body 110 to close the inside of the main body 110, a space portion 102 in which processing for the substrate W such as a deposition process is performed is provided inside the chamber 100 Is formed.

The exhaust port 104 for exhausting the gas existing in the space portion 102 is formed at a predetermined position of the chamber 100 and the exhaust port 104 is formed at a predetermined position And is connected to an exhaust pipe 140 connected to a pump (not shown) provided outside.

A through hole 106 is formed in the bottom surface of the main body 102 to receive the rotation shaft 121 of the substrate support 120, which will be described later. A gate valve (not shown) is formed on the side wall of the main body 102 to carry the substrate W into or out of the chamber 100.

The substrate support 120 has a support plate 122 and a rotation shaft 121 for supporting the substrate W. The support plate 122 is provided in the shape of a disk in a horizontal direction inside the chamber 100 and the rotation axis 121 is perpendicularly connected to the bottom surface of the support plate 122. The rotating shaft 121 is connected to driving means (not shown) such as a motor outside the through hole 106 to lift and rotate the supporting plate 122. At this time, the space between the rotation shaft 121 and the through hole 106 is sealed by using a bellows (not shown) or the like to prevent the vacuum in the chamber 100 from being released in the process of depositing the thin film.

Also, a plurality of substrate seating portions 124 are formed on the upper surface of the support plate 122 at regular intervals. The substrate seating part 124 may be formed in a recessed shape so as to prevent the substrate W mounted on rotation of the support plate 122 for thin film deposition. A portion of the substrate mounted on the substrate seating portion 124 and located in the center of the supporting plate 122, that is, the center of the substrate supporting portion 120 is referred to as the inside of the substrate and the portion located in the edge direction of the substrate supporting portion 120 The portion is referred to as the substrate outer side. A heater (not shown) may be provided on the lower side or inside of the support plate 122 to heat the substrate W to a predetermined process temperature.

The gas injection device is spaced apart from the upper part of the substrate supporting part 120 and injects a process gas such as a raw material gas S, a reactive gas R and a purge gas P toward the substrate supporting part 120.

The gas injection device includes a central injection unit 130C coupled to the lower central portion of the top lead 112 and a plurality of process gas injection units 130C coupled to the lower portion of the top lead 112 along the circumferential direction of the central injection unit 130C. (130S, 130R) and a plurality of purge gas injection units. Here, the central injection unit 130C may not be applied as needed, but it may be applied to prevent different gases from mixing at the center of the substrate support 120 in the process. The centers of the top leads 112 and the center of the substrate support 120 may not coincide with each other but the center of the top leads 112 when the respective injection units are coupled are aligned with the center of the substrate support 120 . The center ejection unit 130C is coupled to the center of the top lead 112 so that the center of the top lead 112, the center of the central ejection unit 130C, and the center of the substrate support 120 coincide with each other Together with reporting. The central portion of the top lead 112, the central portion of the central ejection unit 130C and the central portion of the substrate supporting portion 120 mean a region including the respective centers and spaced apart from the center by a predetermined distance, As shown in FIG.

The central injection unit 130C is formed into a hollow cylindrical shape having an open top, and a plurality of gas injection holes 132C are formed in the lower part. Each of the process gas injection units 130S and 130R is formed in a shape similar to a fan shape in which an upper portion is opened and a space in which gas is diffused is formed, and a plurality of process gas injection holes 132S, 132R are formed. Each of the process gas injection units 130S and 130R is arranged in a circular shape along the circumferential direction of the central injection unit 130C. Further, the gas injection holes formed in the respective injection units communicate with the gas introduction inlet 114 which supplies the gas corresponding to each injection unit, respectively.

The central injection unit 130C is coupled to the lower central portion of the top lead 112 to form a gas diffusion space therebetween and each of the process gas injection units 130S and 130R is connected to the lower portion of the top lead 112 And a portion of the lower portion of the top lead 112 is occupied along the circumferential direction of the central injection unit 130C. The central injection unit 130C injects purge gas acting as an air curtain so that different kinds of gases injected from the plurality of process gas injection units 130S and 130R are not mixed with each other at the central portion of the substrate support 120. [ In other words, since the process gas is exhausted to the exhaust port 104 through an exhaust passage (not shown) formed in the edge direction of the substrate support 120 during the process, the process gas injection unit 130S, The process gas injected into the substrate support 120 may move toward the edge of the substrate support 120 but may be mixed with each other at the center of the substrate support 120 by a pressure gradient difference formed between the substrate support 120 and the gas injection device. . Accordingly, the central injection unit 130C is provided to inject the purge gas into the central portion of the substrate support 120, thereby suppressing the mixing of the different process gases at the central portion of the substrate support 120. [

The process gas injection units 130S and 130R each include a raw material gas injection unit 130S in which a plurality of raw material gas injection holes 132S for injecting a raw material gas are formed, And a reaction gas injection unit 130R in which a plurality of reaction gas spray holes 132R for spraying are formed.

The purge gas injection unit 130P is disposed between the raw material gas injection unit 130S and the reaction gas injection unit 130R, and a plurality of purge gas injection holes 132P for injecting the purge gas are formed. The purge gas injection unit suppresses the mixing of the raw material gas and the reactive gas in the radial direction of the substrate support 120 and removes the residues generated on the substrate during the process.

The conventional raw material gas injection unit 130S, reaction gas injection unit 130R, and purge gas injection unit are formed to have substantially the same size in the radial direction of the substrate support 120, and the gas injection holes Are also formed over substantially the same area along the radial direction of the substrate supporting portion 120. However, in the embodiment of the present invention, as shown in FIG. 4, the length LR of the raw gas injection unit 130S and the reaction gas injection unit 130R is longer than the length LP of the purge gas injection unit, (LD) in the direction of the center of the substrate 112. The raw gas injection unit 130S and the reactive gas injection unit 130R may be formed so as not to interfere with injection of the purge gas in the central injection unit 130C and may protrude toward the center of the top lead 112 The length LD is preferably about 10 to 20% of the radius of the substrate. If the protruded length is smaller than the indicated range, it is difficult to expect the effect of increasing the retention time and the flow rate of the raw material gas and the reactive gas at the central portion of the substrate supporting portion 120, The phenomenon that the gas and the reaction gas are mixed with each other may occur. The protruding structure of the raw gas injection unit 130S and the reactive gas injection unit 130R can be confirmed through the cross-sectional shape of the substrate processing apparatus. In FIGS. 3 (a) and 3 (b) The length x of the injection unit 130S and the length y of the purge gas injection unit 130P are formed to be different from each other. It is also understood that the lengths of the central injection unit 130C are also different from each other.

A raw material gas spraying hole 132S and a reactive gas spraying hole 132R are respectively formed in the portion LD formed in the center of the top lead 112 in the raw gas injection unit 130S and the reactive gas injection unit 130R do. The distance LH1 to the source gas injection hole 132S closest to the center C of the top lead is shorter than the distance LH2 to the purge gas injection hole 132P closest to the center C of the top lead . The source gas injection holes 132S and the reaction gas injection holes 132R are formed closer to the center C of the top leads 112 than the purge gas injection holes 132P, The region where the raw material gas and the reactive gas are injected is longer than the region where the purge gas is injected. Particularly, the raw material gas spray holes 132S and the reactive gas spray holes 132R are biased toward the center of the top lead 112 from the purge gas spray holes 132P, The raw material gas and the reaction gas can be injected, and the residence time at the central portion of the substrate supporter 120 also increases. Accordingly, the raw material gas and the reactive gas are sufficiently supplied to the inside of the substrate adjacent to the central portion of the substrate supporting portion 120, so that the thin film can be smoothly deposited over the entire substrate. At this time, the flow rate of the process gas supplied from the process gas injection hole formed adjacent to the center of the top lead 112 may be increased by controlling the size of the process gas injection hole or adjusting the number.

According to the present invention, a sufficient amount of process gas can be supplied to the inside of the substrate and the retention time of the process gas can be increased, so that the thin film deposition inside the substrate can be smoothly performed to improve the uniformity of the entire thin film have.

Here, it is described that the raw gas injection units 130S and the reaction gas injection units 130R are both protruded toward the center of the top lead 112. However, as shown in FIG. 5A, Only the injection units 130S may be protruded or only the reaction gas injection units 130R may protrude toward the center of the top leads 112 as shown in FIG.

Hereinafter, a connection structure of the process gas injection unit and the central injection unit will be described.

6 and 7 are views showing the connection structure of the process gas injection unit and the central injection unit.

6A is a perspective view showing an embodiment of a process gas injection unit and a central injection unit. The central injection unit 130C can be formed into a hollow cylindrical shape with an open top surface, A groove 131 into which a part of the injection units 130S and 130R is inserted is formed in the center direction of the central injection unit 130C. The grooves 131 may be formed in a number corresponding to the number of the process gas injection units 130S and 130R. Although the upper surfaces of the central injection unit 130C and the process gas injection units 130S and 130R are shown as being fully opened in the drawing, they may be partially opened.

6 (b) is a cross-sectional view showing a part of the configuration of the substrate processing apparatus to which the injection unit formed as shown in (a) of FIG. 6 is applied. A part of the process gas injection units 130S and 130R is inserted into the groove 131. Although not shown, the purge gas injection unit 130P is disposed in close contact with the outer peripheral surface of the central injection unit 130C.

7 (a) is a perspective view showing another embodiment of the process gas injection unit and the central injection unit. Referring to FIG. 7A, the central injection unit 130C 'is formed with a groove 131' formed with a step on a side surface and a bottom surface. Here again, the grooves 131 'may be formed in a number corresponding to the number of the process gas injection units 130S' and 130R '. A step 133 having a shape corresponding to the shape of the groove 131 'may be formed at the end of the process gas injection units 130S' and 130R 'adjacent to the central injection unit 130C'. The step 133 of the process gas injection units 130S 'and 130R' and the groove 131 'of the central injection unit 130C are engaged with each other as shown in FIG. 7 (b). Accordingly, one end of the process gas injection units 130S 'and 130R', that is, the inside thereof, is disposed in a state of overlapping with the central injection unit 130C '. At this time, it is needless to say that a process gas injection hole may be formed in a portion where the step 133 is formed in the process gas injection units 130S 'and 130R'.

Although the above-described exemplary embodiments are described as being applied to a showerhead-type gas injection device, the nozzle-type gas injection device may also be used in various combinations of the above examples.

FIG. 8 is a schematic cross-sectional view of a substrate processing apparatus according to a second embodiment of the present invention, and FIG. 9 is a perspective view of the gas injection apparatus shown in FIG.

Referring to FIG. 8, a substrate processing apparatus according to a second embodiment of the present invention includes a chamber 100, a substrate support 120, and a gas injection device. Here, the gas injection device may be formed of a plurality of pipes each having an introduction port (not shown) communicating with an external gas supply source (not shown), and a plurality of gas injection holes formed at a lower portion thereof. These tubes may be disposed in parallel with the substrate support 120 in the chamber 100 through the sidewalls of the chamber 100 and may extend through the top leads 112 to support the substrate support 120 and / Or may be arranged in parallel. The inlet formed in the gas injection device may be arranged in the form of an arrangement of the gas injection device, for example, disposed in the chamber 100 through the side wall of the chamber 100, or disposed through the top lead 112, The formed position can be changed. The gas injection device may be composed of a plurality of gas injection units 230S, 230R, and 230P in the same manner as the shower head type, and the plurality of gas injection units may include a material gas injection unit 230S, a reaction gas injection unit 230R, And a gas injection unit 230P. At this time, the purge gas injection unit 230P may be disposed between the raw material gas injection unit 230S and the reactive gas injection unit 230R. Further, a central injection unit 230C may be provided if necessary. The central injection unit 230C may be inserted into the gas inlet 114 formed in the top lead 112 in the form of a tube. A space in which the gas is diffused may be formed therein as shown in FIG. 8, A plate having a gas injection hole formed therein may be coupled to a lower central portion of the top lead 112.

At least one of the source gas injection units 230S and the reaction gas injection units 230R may be formed longer than the purge gas injection units 230P. When the central injection unit 230C is not provided, at least one of the source gas injection units 230S and the reaction gas injection units 230R may be extended toward the central portion of the substrate support unit 120. However, when the central injection unit 230C is provided, the gas injection device can be configured as shown in FIG.

Referring to FIG. 9A, on the side of the central injection unit 230C adjacent to at least one of the raw material gas injection units 230S and the reaction gas injection units 230R, the central injection unit 230C A groove 235 facing the center can be formed. At least one of the ends of the raw gas injection units 230S and the reaction gas injection units 230R may be partially inserted into the groove 235.

Referring to FIG. 9B, a groove is formed in a lower portion of the central injection unit 230C adjacent to at least one of the raw gas injection units 230S and the reaction gas injection units 230R, (236). A step 230T having a shape corresponding to the shape of the groove 236 is formed at the end of at least one of the raw gas injection units 230S and the reaction gas injection units 230R inserted into the groove 236 . The groove 236 and the step 230T are interlocked with each other so that the raw material gas injection unit 230S and the reaction gas injection unit 230R can be disposed in a superposing manner on the central injection unit 230C.

10 is a view illustrating a result of measuring a thickness of a thin film formed using the substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 10, the process gas is injected from the side closer to the center of the substrate support 120 and is uniformly injected throughout the substrate. Accordingly, the thin film deposited on the substrate can be formed with a uniform thickness throughout the substrate.

By forming the process gas injection holes in the process gas injection units 130S and 130R so as to be closer to the center of the substrate support portion 120 than the purge gas injection holes 132P in the process gas injection units 130S and 130R, The uniformity of the thin film deposited on the entire substrate can be improved.

Although the present invention has been described in connection with certain exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. Therefore, the scope of the present invention should not be limited by the described embodiments, but should be defined by the appended claims and equivalents thereof.

100: chamber 102:
104: exhaust port 106: through hole
110: Main body 112: Top lead
114: gas inlet 120: substrate support
121: rotation shaft 122: support plate
124: substrate mounting portion 130C: central injection unit
130S: source gas injection unit 130R: reaction gas injection unit
130P: purge gas injection unit 131, 131 ', 235, 236:
132C: gas injection hole 132S: raw material gas injection hole
132R: Reaction gas injection hole 132P: Purge gas injection hole
133, 230T: step 237: space

Claims (12)

A chamber in which a space is formed;
A top lead provided at an upper portion of the chamber;
A substrate support rotatably installed in the chamber to support a plurality of substrates;
And a gas injection device provided on the substrate supporting part to inject gas into the substrate,
Wherein the gas injection device comprises a plurality of gas injection units for radially injecting gas onto the substrate support,
Wherein the plurality of gas injection units comprise:
At least one reaction gas injection unit provided with a plurality of reaction gas injection holes for injecting a reaction gas, at least one reaction gas injection unit having a plurality of reaction gas injection units formed with a plurality of source gas injection holes for injecting a source gas, And a plurality of purge gas injection holes for injecting a purge gas,
Wherein at least one of the source gas injection unit and the reaction gas injection unit is longer in the center direction of the top lead than the purge gas injection unit. delete The method according to claim 1,
Wherein at least one of the source gas injection units and the reaction gas injection units is formed to be 10 to 20% longer than the diameter of the substrate in the purge gas injection unit. The method of claim 3,
Wherein each of the plurality of gas injection units is coupled to a lower portion of the top lead to form a gas diffusion space and a plurality of gas injection holes are formed on a lower surface thereof. The method of claim 4,
Wherein the gas injection device includes a central injection unit coupled to a lower central portion of the top lead to form a gas diffusion space and having a plurality of gas injection holes formed on a lower surface thereof,
Wherein the plurality of gas injection units are circularly joined to the edge of the central injection unit along a circumferential direction. The method of claim 3,
Wherein the plurality of gas injection units are formed by a plurality of pipes passing through at least any one of the chamber and the top lead and disposed in parallel with the substrate supporting portion and having a plurality of gas injection holes formed on a lower surface thereof. The method of claim 6,
Wherein the gas injection device includes a central injection unit for injecting gas at a central portion of the substrate support,
Wherein the plurality of gas injection units are radially arranged around the central injection unit. The method according to claim 5 or 7,
Wherein at least one of the plurality of source gas injection holes and the reaction gas injection holes is formed closer to the center of the top lead than the purge gas injection holes. The method according to claim 5 or 7,
Wherein the plurality of source gas injection holes or the plurality of reaction gas injection holes are formed along the radial direction of the substrate supporting part and are formed to inject more gas inward than the outside along the radial direction of the substrate supporting part, . The method according to claim 5 or 7,
Wherein at least one groove is formed in a side surface of the central injection unit adjacent to the raw gas injection units or the reactive gas injection units,
Wherein a part of at least one of the source gas injection units and the reaction gas injection units is inserted into the groove and overlapped with the central injection unit. The method according to claim 5 or 7,
Wherein the central injection unit has at least one groove formed with a step on a bottom surface and a side surface portion adjacent to at least any one of the material gas injection units and the reaction gas injection units,
Wherein at least one of the source gas injection units and the reaction gas injection units adjacent to the central injection unit has a stepped shape corresponding to the groove,
Wherein at least one of the source gas injection units and the reaction gas injection units is inserted into the groove and overlapped with the central injection unit. The method of claim 7,
Wherein the central injection unit is spaced apart from the raw gas injection units and the reaction gas injection units so as to form a space adjacent to at least one of the raw gas injection units and the reactive gas injection units,
Wherein at least one of the source gas injection units and the reaction gas injection units is disposed in the space.

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