KR20150098456A - Apparatus for processing substrate - Google Patents

Abstract

The present invention relates to an apparatus for processing a substrate discharging a process gas processing multiple substrates. The apparatus for processing a substrate which is an embodiment of the present invention comprise a process chamber having multiple substrate processing spaces; multiple substrate supports arranged inside the process chamber by a support shaft penetrating the bottom of the process chamber, and supporting the substrate; and multiple vent parts formed on the bottom of the process chamber between adjacent supports for the process gas sprayed toward the substrate supports to be discharged in common.

Description

[0001] Apparatus for processing substrate [0002]

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus for exhausting a process gas for processing a plurality of substrates.

The semiconductor manufacturing process is performed in a substrate processing apparatus designed for an optimum environment for the process, and recently, a substrate processing apparatus for performing a deposition or etching process using plasma is widely used.

Generally, a thin film is formed on a substrate by using a substrate processing apparatus such as a chemical vapor deposition (CVD), an atomic layer deposition (ALD), or a plasma enhanced chemical vapor deposition (PECVD) Predetermined gases are supplied to the inside of the process chamber and are deposited on the substrate. A substrate processing apparatus for simultaneously depositing a plurality of substrates in order to shorten the substrate deposition time has been proposed. Since such a substrate processing apparatus draws or draws a substrate while rotating a substrate support on which the substrate is placed, a rotation axis for rotating the substrate support on which the substrate is mounted is provided at the bottom, and a thin film is formed to improve the thin film characteristics of the substrate The substrate may be rotated even during the process.

1, which schematically shows a bottom surface of a substrate processing apparatus for processing a plurality of substrates W, a common exhaust port 13 for exhausting each reaction gas and purge gas is provided in the bottom plate 12 Is installed. The exhaust port 13 is connected to an exhaust pipe (not shown), and an exhaust pipe (not shown) is connected to a vacuum pump (not shown) for adjusting the pressure in the process chamber 11. Here, in the process chamber 11, a plurality of substrate supports 14 constituting a substrate processing space where substrate processing is performed are disposed. Then, various kinds of gas flowing out from the plurality of substrate support rods 14 are exhausted to a common exhaust port 61. That is, a predetermined thin film is formed on the substrate W by loading the substrate W onto the substrate support 14 and then forming a plasma while spraying a predetermined process gas into the process space of the process chamber 11 . Then, the process gas injected into the process space during the thin film deposition process is exhausted to the outside through a single exhaust port 13 formed in the bottom surface of the process chamber 11.

However, the exhaust structure of such a substrate processing apparatus has a problem that uniform exhaust is not performed. That is, since the process gases injected toward the plurality of substrate supports are exhausted together through the single exhaust port 13, there is a problem that the exhaust flow of the process gas processed in each substrate is not uniformly exhausted.

Korean Patent Publication No. 10-2010-7023541

An object of the present invention is to provide an exhaust means for efficiently exhausting a process gas. The technical problem of the present invention is to uniformly exhaust the process gas processed in each substrate.

A substrate processing apparatus according to an embodiment of the present invention includes: a processing chamber having a plurality of substrate processing spaces; A plurality of substrate supports disposed within the process chamber by support axes passing through the bottom surface of the process chamber to support the substrate; And a plurality of exhaust portions formed on a bottom surface of the process chamber between the adjacent substrate supports so that the process gas injected toward the substrate support side is common exhausted.

Each of the plurality of exhaust portions includes an exhaust groove formed in a bottom surface of the process chamber between the adjacent substrate supports; An exhaust port for exhausting the process gas introduced through the exhaust groove to the outside of the process chamber; And a cover body coupled to an upper portion of the exhaust groove to form a first gas inlet, a second gas inlet, and an exhaust channel through engagement with the exhaust groove.

The exhaust groove portion may include a first exhaust groove portion connected to the gas inlet and the gas inlet, the first exhaust groove portion being formed in a bottom surface of the process chamber; And a second exhaust groove connecting the first exhaust groove and the exhaust port to the bottom surface of the process chamber.

The gas first inlet is formed in the bottom of the process chamber around the substrate support and the gas second inlet is formed in the bottom of the process chamber around another substrate support adjacent to the substrate support on which the first gas inlet is located .

And a plurality of substrate support receiving grooves formed on the bottom surface of the process chamber.

The first evacuation groove is formed inward to communicate with a substrate support seating groove adjacent to each other, and the gas first inlet and the gas second inlet are formed on the circumferential surface of the substrate support seating groove.

The exhaust ports are formed in the same number as the number of the substrate supports.

The exhaust port is characterized in that at least one of the exhaust ports is smaller than the diameter of the other exhaust port.

The exhaust port is located on the same circumference centered on the center of the bottom surface of the process chamber.

The exhaust port includes a first exhaust port, a second exhaust port, a third exhaust port, and a fourth exhaust port that are equidistantly spaced on the same circumference centered on the center of the bottom surface of the process chamber.

According to an embodiment of the present invention, gases that have been processed in a plurality of substrates in a process chamber can be exhausted uniformly. Thus, a thin film can be deposited with a uniform thickness on each substrate. In addition, according to the embodiment of the present invention, the process gas around the adjacent two substrate supports can be uniformly discharged by collecting and discharging the process gases to one place.

1 is a top view of the substrate processing apparatus.
FIG. 2 is an exploded perspective view of a shot table of a substrate processing apparatus according to an embodiment of the present invention. FIG.
3 is an exploded perspective view showing an exhaust part of the substrate processing apparatus according to the embodiment of the present invention.
4 is a cross-sectional view of the substrate processing apparatus according to the embodiment of the present invention in the direction AA '.
5 is a cross-sectional view of the substrate processing apparatus according to the embodiment of the present invention in the BB 'direction.
6 is a top view of the bottom surface of the process chamber according to an embodiment of the present invention.
7 is a view showing a connecting member formed on a lid according to an embodiment of the present invention.
8 is a photograph showing an experimental example of an exhaust flow of a process gas processed in each substrate support according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know. Wherein like reference numerals refer to like elements throughout.

The following substrate processing apparatuses can perform substrate processing such as chemical vapor deposition (CVD), atomic layer deposition (ALD), and plasma chemical vapor deposition (PECVD) on four substrates individually Or < / RTI > However, it will be appreciated that the present invention can be applied to a case in which not only four substrate processing but also various number of substrate processing are performed in the process chamber.

FIG. 2 is a perspective view of the substrate processing apparatus according to the embodiment of the present invention, FIG. 3 is a perspective view of the substrate processing apparatus according to the embodiment of the present invention, 5 is a cross-sectional view of the substrate processing apparatus according to the embodiment of the present invention in the BB 'direction, and FIG. 6 is a cross-sectional view of the substrate processing apparatus according to the embodiment of the present invention, As viewed from above.

The substrate processing apparatus includes a process chamber 100, a substrate support seating groove 120, a substrate support 200, a gas spraying unit 400, an exhaust unit 140, a turntable 300, and a turntable drive shaft 301 .

The process chamber 100 has a plurality of substrate processing spaces, and processes such as deposition, etching, etc. are performed on each substrate. The process chamber 100 includes a main body 111 having an open upper portion and a top lead 110 provided on the main body 111 so as to be openable and closable. The top lead 110 is provided at an upper portion of the main body to form four gas injection portions 400. When the top lead 110 is coupled to the upper portion of the main body 111 to close the main body 111, an internal space in which processing for the substrate W, such as a deposition process, . (Not shown) through which the curtain gas is injected may be formed on the bottom surface of the top lead 110. The curtain gas may be injected downward so that the process gases injected from the respective gas injecting parts 400 are not mixed with each other .

Since the inner space of the process chamber 100 is generally formed in a vacuum atmosphere, an exhaust groove 141 for exhausting the process gas existing in each of the substrate support receiving grooves 120 is formed on the bottom surface of the process chamber 100 An exhaust port 142 is formed and the exhaust port 142 is connected to an exhaust line connected to an external pump. A through hole 205 through which the support shaft 201 of the substrate support 200 to be described later is inserted is formed on the bottom surface of the process chamber 100. The substrate support support groove 120 205b, 205c, and 205d for each of the light emitting diodes 120a, 120b, 120c, and 120d. At least one substrate entry / exit port 101 is formed in the side wall of the process chamber 100 for loading / unloading the substrate into / from the process chamber 100. A through hole 305 (hereinafter, referred to as a turntable support hole) through which the drive shaft 301 is inserted is supported through the bottom surface of the process chamber 100 to support the turntable 300.

The heating unit (not shown) is a heating unit for maintaining the inside of the process chamber 100 at a constant temperature. The heating means may be provided on the inner wall, the outer wall, or the wall of the process chamber 100 to maintain the process chamber 100 at a predetermined temperature.

The substrate support seating grooves 120 can be grasped at the bottom surface of the process chamber 100. When the four substrate supports 200 are provided in the process chamber 100, the four substrate support receiving grooves 120 may be formed by individually grinding each of them. For example, the substrate support mount 120a on which the first substrate support 200a is mounted, the second substrate support mount 120b on which the second substrate support 200b is mounted, and the third substrate support 200c And a fourth substrate support table seating groove 120d on which the fourth substrate support table 200d is seated. The substrate support receiving groove 120 has the same shape as that of the outer surface of the substrate support 200 so that the substrate supporting table 200 is positioned and can move up and down within the substrate receiving groove receiving groove 120. When the substrate support 200 is formed in a circular shape, the substrate support receiving groove 120 has a circular peripheral surface and a recessed bottom surface. For reference, the reason for installing the substrate support receiving groove 120 is to simplify the structure. That is, since the lift pins are provided on the bottom surface of the substrate support receiving groove 120 and the substrate fin 200 is moved up and down, the lift pins can protrude above the substrate support 200, thereby simplifying the structure of the chamber .

The substrate support 200 is a means for supporting the substrate and is movable up and down within the substrate support seating groove 120 by a support shaft 201 passing through the bottom surface of the process chamber 100, . The four substrate supports 200 can independently move up and down. To this end, four substrate supports 200 (200a, 200b, 200c, 200d) are each provided in the form of a disk in the horizontal direction inside the process chamber 100, and each of the support shafts 201a, 201b, 201c, 201d Are vertically connected to the bottom surface of the substrate support 200. The support shaft 201 is connected to driving means (not shown) such as an external motor through the through hole to move the substrate support table 200 up and down. In addition, a heater (not shown) is provided inside the substrate support 200 to heat the substrate to a predetermined process temperature. When the substrate support 200 is located in the corresponding substrate mounting grooves 120, a gap is formed between the substrate support 200 and the substrate mounting grooves 120 so that the process gas (raw material gas, Plasma gas, cleaning gas, etc.) can be introduced into the gap.

The gas injector 400 is spaced apart from each substrate support 200 and independently emits process gases for each substrate support 200. Each gas injection part 400 is spaced apart from the upper part of the substrate support 200 and is implemented as a showerhead type so as to inject the same or different kinds of process gases introduced from the outside toward the substrate. In the case of the CVD deposition process, the same process gas may be injected into each gas injection unit 400, and the gas injection units 400, 400a, 400b, 400c, Or an ALD deposition process, different process gases such as a source gas, a reactive gas, and a purge gas may be injected into the respective gas injecting sections 400. Each of the gas injecting sections 400 may include a source A gas source and a reactive gas source and a purge gas source are connected through each supply line. On each of the supply lines, there is provided a valve (not shown) which is a mass flow controller (MFC) for controlling the supply of the source gas, the reaction gas and the purge gas. The source gas supply source stores the gaseous raw material or the liquid raw material, and when the liquid raw material is stored, it further includes a vaporizing means (not shown) for supplying the liquid raw material and vaporizing the liquid raw material. At this time, the vaporizing means can use a vaporizer or a bubbler, which is a general means, and thus a detailed description thereof will be omitted. Further, it may include a carrier gas supply means for storing and supplying a carrier gas such as helium (He).

For reference, chemical vapor deposition (CVD) is the most widely used deposition technique. A thin film having a desired thickness is deposited on a substrate using a reactive gas and a decomposition gas. Chemical vapor deposition (CVD) first deposits a thin film of desired thickness on a substrate by injecting various gases into the reaction process chamber 100 and chemically reacting gases induced by high energy such as heat, light, plasma . In chemical vapor deposition, the deposition rate is increased by controlling the reaction conditions through the ratio and amount of the plasma or gases applied as the reaction energy. However, it is very difficult to control the thermaodynamic stability of the atoms because the reactions are fast, and chemical vapor deposition reduces the physical, chemical and electrical properties of the film. Atomic layer deposition (ALD) is a method for depositing an atomic layer by alternately supplying a source gas (reaction gas) and a purge gas. The thin film thus formed has good coating properties and is applied to a large-diameter substrate and a thin film, Physical properties are excellent. Generally, atomic layer deposition is performed by first supplying a first source gas to chemically adsorb a first layer of a source on a substrate surface, and excessively physically adsorbed sources to purge the purge gas, The second source gas is supplied to the source of the layer to chemically react the first source and the second source gas to deposit the desired atomic layer thin film and the excess reactive gas is purged by purging the purge gas. cycle) to deposit a thin film. As described above, in the atomic layer deposition method, a stable thin film can be obtained by using a surface reaction mechanism, and a uniform thin film can be obtained. In addition, the atomic layer deposition method suppresses the generation of particles due to the gas phase reaction as compared with the chemical vapor deposition method because the source gas and the reactive gas are sequentially injected and purged. When a thin film is deposited using such an atomic layer deposition method, deposition occurs only by a substance adsorbed on the surface of the substrate (generally, a chemical molecule including a constituent element of the thin film). At this time, since the adsorption amount is generally self-limiting on the substrate, it is uniformly obtained over the entire substrate without depending on the amount of the supplied reactive gas (amount of the source gas).

The turntable 300 may be positioned on the upper side of the substrate support 200 as a disc-shaped plate plate having the same number of through holes 302 (hereinafter referred to as "turntable through holes") as the substrate support 200. When four substrate supports 200 are provided, four substrate support turntable through holes 302 through which each substrate support table 200 can move are formed on the turntable 300. The turntable through holes 302 (302a, 302b, 302c, and 302d) may have the same shape as the shape of the substrate support 200. And is formed to be larger than the shape of the substrate support table 200 so that the substrate support table 200 can pass through the turntable through hole 302 and ascend and descend. The turntable through-hole 302 may be formed on the turntable 300 alone, but may be formed with an opening of a part of the through-hole. That is, when the entire substrate support is enclosed, the turntable through hole of the closed curve is provided, and when the substrate support is partially surrounded, the turntable through hole 302 is partially opened.

The substrate supporting ring 301 is provided at the rim of the turntable through hole 302, respectively. Therefore, the rim of the turntable through hole 302 is formed as a stepped step so that the substrate support ring 301 is laid over the stepped surface. (Not shown) attached to a separate turntable through hole 302 without a step difference. 4 illustrates that the substrate is supported by a support ring having a stepped jaw.

A drive shaft 301 is vertically coupled to the turntable 300 through the bottom surface of the process chamber 100 to move up and down the turntable 300. The driving shaft 301 is vertically connected to the turntable 300 through a turntable support hole 305 and is connected to driving means (not shown) such as an external motor to move the turntable 300 up and down.

Hereinafter, a method of loading a substrate in a substrate processing apparatus according to an embodiment of the present invention having such a configuration will be briefly described.

A case where a substrate placed on the first substrate supporting table 200a and the second substrate supporting table 200b is moved on the third substrate supporting table 200c and the fourth substrate supporting table 200d will be exemplarily described. When the turntable 300 is raised, the transferring rings 301a and 301b of the first substrate supporting table 200a and the second substrate supporting table 200b and the substrate thereon are positioned on the turntable 300. [ When the turntable 300 is rotated in a clockwise direction in a state where each substrate S is supported in this state, the turntable 300 is positioned above the third substrate support table 200c and the fourth substrate support table 200d. When the turntable 300 is lowered, the transferring rings 301a and 301b and the upper substrate S are moved to the third substrate support 200c and the fourth substrate support 200d on the turntable 300. In this process, the transfer rings 301c and 301d in the third substrate support 200c and the fourth substrate support 200d move to the first substrate support 200a and the second substrate support 200b.

On the other hand, when a plurality of substrates mounted on a plurality of substrate substrate supports are processed as described above, the process gas remaining in each substrate must be discharged uniformly. For this purpose, the embodiment of the present invention is characterized in that the process gas in at least two adjacent substrate support receiving grooves 120 is introduced into one place and is discharged to the outside through a flow path formed horizontally on the bottom surface of the process chamber 100 And a base 140.

The process gas remaining in the substrate support seating groove 120 must be exhausted to the outside after the substrate processing is performed on the substrate mounted on the substrate support 200 or when the substrate processing is performed, The process gas in the support platform seating groove 120 is introduced into one place and exhausted to the outside. The process gas introduced into one of the process chambers 100 may be discharged to the outside through the exhaust port 142 through a flow path formed horizontally on the bottom surface of the process chamber 100.

Embodiments of the exhaust unit 140, in which the process gases in the two or more adjacent substrate support receiving grooves 120 are introduced into one place and are discharged to the outside through a flow path formed horizontally on the bottom surface of the process chamber 100, Structure.

The exhaust portion 140 is formed on the bottom surface of the process chamber between the adjacent substrate supports so that the process gas injected toward the substrate support side is common exhausted. Each of the plurality of exhaust portions 140 includes an exhaust groove portion 141 formed on a bottom surface of the process chamber between adjacent substrate supports 200 and a process gas exhausted through the exhaust groove portion 141 to the outside of the process chamber The gas second inlet 1412, the first exhaust groove portion 1413 and the second exhaust groove portion 1414 through the exhaust port 142 for connection to the exhaust groove portion 141 and the exhaust groove portion 141, And a cover body 143 coupled to an upper portion of the exhaust groove portion 141 so as to be formed.

The exhaust portion 140 includes gas inlets 1411 and 1412 for introducing gas around at least two adjacent substrate supports, an exhaust port 142 formed through the bottom surface of the process chamber 100, a gas inlet 1411 and 1412 are horizontally waved along the horizontal plane of the bottom surface of the process chamber 100 so as to flow into the exhaust port 142. The exhaust part 140 includes a cover body 143 that covers the exhaust groove part 141 so that the exhaust groove part 141 is not exposed at the bottom surface of the process chamber 100. The first inlet 1411, the second gas inlet 1412, the first exhaust groove 1413 and the second exhaust groove 1414 can be formed by covering the exhaust groove.

The gas first inlet 1411 and the gas second inlet 1412 may be formed to communicate with the first exhaust groove 1413 through the bottom surface of the process chamber. A gas first inlet 1411 is formed in the bottom of the process chamber around the substrate support 200 to introduce gas and a second gas inlet 1412 is located adjacent the substrate support where the gas first inlet 1411 is located And is formed at the bottom of the process chamber around the other substrate support to allow gas to enter. On the other hand, the gas first inlet 1411 and the gas second inlet 1412 can be formed even without the cover body 143. For example, it can be realized by forming an exhaust groove on the bottom surface of the process chamber and forming a gas inlet on the bottom surface of the process chamber in communication with the exhaust groove. However, in order to have such a penetrating gas inlet structure, an exhaust groove may be formed on the bottom surface of the process chamber, and an upper block of the exhaust groove may be assembled. At this time, the shielding block has an exhaust groove shape, and a through hole is formed through the shielding block so that the through hole can be utilized as a gas inlet.

The exhaust groove portion 141 includes a first exhaust groove portion 1413 that connects the first gas inlet 1411 and the second gas inlet 1412 to the bottom surface of the process chamber between adjacent substrate supports, And a second exhaust groove 1414 which connects the exhaust groove portion 1413 and the exhaust port 142 and is formed on the bottom surface of the process chamber. The first exhaust grooves 1413 are formed inwardly to communicate with the substrate support seating grooves 120 adjacent to each other so that the gas first inlet grooves 120 1411 and the gas second inlet 1412 may be formed on the circumferential surface of the substrate support receiving groove 120.

Hereinafter, the exhaust port 142, the exhaust groove 141, and the cover 143 will be described in detail.

The exhaust port 142 may be vertically formed through the bottom surface of the process chamber 100 and the exhaust port 142 may be connected to a vacuum exhaust pipe 150 connected to an external vacuum pump (not shown). The exhaust port 142 is located between the different substrate supports 200. The first exhaust port 142a may be positioned between the first and second substrate support seating grooves 120a and 120b in the process chamber 100 between the first substrate support platform mounting groove 120a and the second substrate support substrate mounting groove 120b. As shown in FIG. The second exhaust port 142b is located on the bottom surface of the process chamber 100 between the second substrate support mount recess 120b and the third substrate support mount recess 120c and the third exhaust port 142c The fourth exhaust port 142d is located on the bottom surface of the process chamber 100 between the third substrate support mount recess 120c and the fourth substrate support mount recess 120d and the fourth exhaust port 142d is located on the bottom surface of the fourth substrate support mount recess 120d, And the first substrate support receiving groove 120a.

The first exhaust port 142a, the second exhaust port 142b, the third exhaust port 142c and the fourth exhaust port 142d, which are respectively located between the adjacent substrate support seating grooves 120, On the same circumference with the center of the bottom surface of the bottom surface as the center point. That is, the first exhaust port 142a, the second exhaust port 142b, the third exhaust port 142c, the fourth exhaust port 142b, the third exhaust port 142c, Port 142d may be located. Therefore, the exhaust flow of the process gas exhausted from the first exhaust port 142a, the second exhaust port 142b, the third exhaust port 142c, and the fourth exhaust port 142d can be made uniform.

The exhaust port 142 is formed such that at least one of the exhaust ports is different in diameter from the other exhaust ports. The gas exhausted from the four exhaust ports 142a, 142b, 142c, and 142d can be collected by four pumping blocks into one exhaust port and exhausted by the pump through the main pipe. In the case of an exhaust port near the main piping connected to such a pump, the exhaust pressure may be greater than other exhaust ports apart. Therefore, the diameter of the exhaust port near the main pipe can be made smaller than the diameter of another exhaust port further away from the main pipe for uniform exhaust.

The exhaust grooves 141 have a shape horizontally drawn along the bottom surface between the adjacent substrate supports 200 so that the gas around the substrate supports 200 flows to the exhaust port 142. The exhaust grooves 141 are provided between adjacent substrate support seating grooves 120 and include a first substrate support platform seating groove 120a on which the first substrate support platform 200a is mounted, A third substrate support table seating groove 120c on which the third substrate support table 200c is mounted and a fourth substrate support table mounting groove 120d on which the fourth substrate support table 200d is mounted When formed on the bottom surface of the chamber 100, exhaust grooves 141 may be provided between the substrate support seating grooves 120, respectively. That is, a first exhaust groove 141a for introducing the process gas of the first and second substrate support seating grooves 120a and 120b to the first exhaust port 142a, A second exhaust groove portion 141b through which the process gas in the mount groove 120b and the third substrate mount receiving groove 120c flows and is dumped to the second exhaust port 142b, a third substrate mount receiving groove 120c, A third exhaust groove portion 141c for introducing the process gas of the fourth substrate support member mounting groove 120d to the third exhaust port 142c and a third exhaust groove portion 141b for receiving the process gas of the fourth substrate support member mounting groove 120d, And a fourth exhaust groove 141d through which the process gas of the first exhaust port 120a flows and which is sent to the fourth exhaust port 142d.

Each of the exhaust grooves 141 (141a, 141b, 141c, and 141d) has a stepped groove formed on the bottom surface of the process chamber 100 to provide a horizontal flow path, To be discharged to the exhaust port 142 along the exhaust groove portion 141 formed in the bottom surface of the process chamber 100. Each of the exhaust grooves 141 is formed in a 'T' shape so as to be stepped on the bottom surface between the adjacent substrate support seating grooves 120. That is, the exhaust groove portion 141 collects the process gases introduced from the two gas inlets into one place, flows along the flow path formed in the bottom surface of the process chamber 100, and discharges through the one exhaust port 142 on the opposite side .

To this end, each exhaust groove 141 connects a first gas inlet port 1411 and a second gas inlet port 1412, and has a first exhaust groove 1413 formed in the bottom surface of the process chamber between adjacent substrate supports, And a second exhaust groove 1414 which connects the exhaust groove portion 1413 and the exhaust port 142 and is formed on the bottom surface of the process chamber.

In the case of being provided in the substrate support seating groove 120, the gas first inlet 1411 connected to the peripheral surface of the substrate support seating groove 120 and the peripheral surface of the other substrate support base mounting recess 120 A first gas exhaust port 1412 connected to the first gas exhaust port 1412 and a second gas exhaust port 1412 connected to the second gas exhaust port 1412 through a gas inlet port 1412, And a second exhaust groove 1414 which connects the first exhaust groove 1413 and the exhaust port 142 to the bottom surface of the process chamber 100. One substrate support seating groove 120 is provided with two gas inlets 1411 and 1412 to allow process gases in the substrate support seating groove 120 to flow to different gas inlets. 6, the first gas inlet port 1411a of the first exhaust groove portion 141a and the gas second inlet port 141b of the second exhaust groove portion 141b are connected to the first substrate support mount recess 120a, 1412a are formed so that the process gas in the first substrate support seating groove 120a is supplied to the gas first inlet 1411 of the first exhaust groove 141a and the gas second inlet 1412 of the second exhaust groove 141b Respectively.

In addition, the gas first inlet 1411 and the gas second inlet 1412 provided on the circumferential surface of the same substrate support receiving groove 120 are opposed to each other and located at opposed positions. For example, the gas first inlet 1411a of the first exhaust groove 141a formed in the first substrate support mount groove 120a and the gas second inlet 1412a of the second exhaust groove 141b are formed in the first Are formed on the circumferential surface of the substrate support receiving groove 120a and face each other and are positioned facing each other by 180 °. By placing the gas first inlet 1411a and the gas second inlet 1412a in opposing positions facing each other, the process gas in the substrate support receiving groove 120 can be uniformly discharged without being deviated to either side .

The cover body 143 is a wall body that covers the exhaust groove portion 141 so that the exhaust groove portion 141 is not exposed from the bottom surface of the process chamber 100. Therefore, the cover 143 also has a shape similar to that of the T-shaped exhaust groove 141. The cover body has a corresponding first cover body 143a, a second cover body 143b, a third cover body 143c, a fourth cover body 143d . The cover body 143 is coupled to the upper portion of the exhaust groove 141 so as to form the first gas inlet, the second gas inlet, and the exhaust passage through engagement with the exhaust groove 141. The exhaust passage through which the gas is exhausted may be formed by coupling the cover member 143 to the first exhaust groove portion 1413 and the second exhaust groove portion 1414.

 The cover body 143 can be realized as a thin plate in the form of a plate, but can also be implemented as a housing wall having a thickness. In this case, a stepped groove 431 connected to the first exhaust groove 1413 is provided on the side wall of the lid body 143 as shown in FIG. The stepped groove 1431 has a stepped groove formed in the sidewall of the lid body 143 so that the cross sectional area between the first gas inlet 1411 and the stepped groove 1431, which can flow into the first exhaust groove 1413, So that exhausting can be easily performed.

In addition, the bottom surface of the lid body 143 can be realized in the form of a "T" shape of the exhaust groove 141 by piercing the exhaust passage in the form of a line groove. In this case, in addition to the exhaust passage of the exhaust groove portion 141, the exhaust gas can be further exhausted as much as the exhaust groove formed on the bottom surface of the cover body 143.

An example of an exhaust flow of a process gas processed in each substrate support according to an embodiment of the present invention is shown in FIG. Referring to FIG. 8, it can be seen that the exhaust flow in each substrate support is uniform.

In the above description, the exhaust structure has been described in the state that the substrate support receiving groove 120 is provided. However, even if the substrate inlet receiving groove 120 is not formed, a gas inlet, an exhaust port, It will be obvious that the same can be applied to the case of implementing the exhaust part.

Although the present invention has been described with reference to the accompanying drawings and the preferred embodiments described above, the present invention is not limited thereto but is limited by the following claims. Accordingly, those skilled in the art will appreciate that various modifications and changes may be made thereto without departing from the spirit of the following claims.

100: process chamber 101: substrate entrance
120: substrate support base mounting groove 140:
141: exhaust groove part 200: substrate support
400: gas jetting part 300: turntable
301: turntable drive shaft 1411: gas first inlet
1412: gas second inlet 1413: first exhaust groove
1414: Second exhaust groove

Claims (10)

Embodiments of the present invention provide a process chamber having a plurality of substrate processing spaces;
A plurality of substrate supports disposed within the process chamber by support axes passing through the bottom surface of the process chamber to support the substrate;
A plurality of exhaust portions formed on a bottom surface of the process chamber between the adjacent substrate supports so that the process gas injected toward the substrate support side is common exhausted;
And the substrate processing apparatus.
The exhaust system according to claim 1, wherein each of the plurality of exhaust portions includes:
An exhaust groove formed in a bottom surface of the process chamber between the adjacent substrate supports;
An exhaust port for exhausting the process gas introduced through the exhaust groove to the outside of the process chamber;
A cover body coupled to an upper portion of the exhaust groove to form a first gas inlet, a second gas inlet, and an exhaust channel through engagement with the exhaust groove;
And the substrate processing apparatus.
The exhaust gas recirculation device according to claim 2,
A first exhaust groove connecting the first gas inlet and the second gas inlet to the bottom of the process chamber;
A second exhaust groove connecting the first exhaust groove and the exhaust port to the bottom surface of the process chamber;
And the substrate processing apparatus.
The method of claim 2,
The gas first inlet being formed in the bottom of the process chamber around the substrate support,
Wherein the gas second inlet is formed at a bottom of the process chamber around another substrate support adjacent to the substrate support where the first gas inlet is located.
The method of claim 3,
A plurality of substrate support receiving grooves formed in the bottom surface of the process chamber;
And the substrate processing apparatus.
The method of claim 5,
Wherein the first exhaust grooves are formed inward to communicate with the substrate support seating grooves adjacent to each other and the gas first inlet and the gas second inlet are formed on the circumferential surface of the substrate support seating groove.
The exhaust gas purifying apparatus according to any one of claims 2 to 6,
The number of which is the same as the number of the substrate supports.
The exhaust gas purifying apparatus according to any one of claims 2 to 6,
Wherein at least one of the exhaust ports is smaller than the diameter of the other exhaust ports.
The exhaust gas purifying apparatus according to any one of claims 2 to 6,
Wherein the substrate processing apparatus is located on the same circumference with the center of the bottom surface of the process chamber as a center.
The exhaust system according to claim 9,
Wherein the first exhaust port, the second exhaust port, the third exhaust port, and the fourth exhaust port are equidistantly spaced on the same circumference with the center of the bottom surface of the process chamber as a center.

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