KR101540718B1 - substrate processing apparatus - Google Patents

substrate processing apparatus Download PDF

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Publication number
KR101540718B1
KR101540718B1 KR1020140028475A KR20140028475A KR101540718B1 KR 101540718 B1 KR101540718 B1 KR 101540718B1 KR 1020140028475 A KR1020140028475 A KR 1020140028475A KR 20140028475 A KR20140028475 A KR 20140028475A KR 101540718 B1 KR101540718 B1 KR 101540718B1
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KR
South Korea
Prior art keywords
exhaust
reaction
chamber
substrate
pumping
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KR1020140028475A
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Korean (ko)
Inventor
신동화
김슬기
김광수
방홍주
Original Assignee
국제엘렉트릭코리아 주식회사
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Priority to KR1020140028475A priority Critical patent/KR101540718B1/en
Priority to PCT/KR2014/012594 priority patent/WO2015137611A1/en
Priority to TW104107725A priority patent/TWI584392B/en
Application granted granted Critical
Publication of KR101540718B1 publication Critical patent/KR101540718B1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention provides a substrate processing apparatus. The substrate processing apparatus according to the present invention includes a process chamber which includes a bottom chamber whose upper side is opened and a top chamber which closes the upper side of the bottom chamber which is opened, a support member which is installed in the bottom chamber and loads a plurality of substrates on the same plane, exhaust members which are provided on the lower side of the top chamber facing the support member and are radially extended from the center of the top chamber, reactive cells with fan shapes which include reaction spaces partitioned by the exhaust members, and a shower head unit which is installed on the reactive cell and supplies processing gas on the substrate. The exhaust member includes first side exhaust holes which are formed on the side thereof and the reactive cell includes second side exhaust holes which are formed on an arc part of the fan. An exhaust flow is formed from the center of the reaction space in all directions.

Description

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of minimizing stagnation of gas by multi-directional exhaust of a gas ejected to a substrate.

In order to improve the conformability of the deposited film during the deposition process for manufacturing a semiconductor device, the reaction product of two or more gases in one system is used to control the temperature, pressure, and gas ratio Gas ratio, reaction time, and uniform gas supply are very important.

Particularly, in order to supply a uniform gas, the size and number of the holes of the showerhead / nozzle, the number of the slots, and the distance between the substrate and the substrate are adjusted to supply the gas. However, it is difficult and very limited to control the deviation of the concentration due to the gas stagnation in the reaction space of the eccentric exhaust type. Particularly, in the case of the precursor, depending on the kind of the hole pattern, the position and the head and the volume of the nozzle, the gas phase reaction and the adsorption due to the acceleration of the decomposition of the precursor are changed, It was difficult to control the concentration deviation due to the characteristic change, and it was difficult to obtain a uniform quality due to the composition of the depression, the step coverage, the loading effect, and the film.

An object of the present invention is to provide a substrate processing apparatus capable of minimizing gas congestion through multi-directional exhaust.

The problems to be solved by the present invention are not limited thereto, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

According to an aspect of the present invention, there is provided a process chamber comprising: a processing chamber having an upper chamber opened at an upper portion thereof and an upper chamber closing an open upper portion of the lower chamber; A support member installed in the lower chamber and on which a plurality of substrates are placed on the same plane; Exhausting members provided on a bottom surface of the upper chamber facing the support member and extending radially from the center of the upper chamber; Fan shaped reaction cells provided on the bottom surface of the upper chamber and having reaction spaces partitioned by the exhaust members; And a showerhead unit installed in the reaction cell and supplying a process gas onto the substrate; Wherein the exhaust member includes first side exhaust holes formed in a side surface thereof and the reaction cell includes second side exhaust holes formed in a sector of a fan shape so as to discharge exhaust gas from the center of the reaction space in all directions And a substrate processing apparatus.

And a ring-shaped pumping baffle surrounding the edge of the support member and being provided with vacuum pressure through the exhaust pipe; The pumping baffle can deliver vacuum pressure to the exhaust member and the reaction cell.

The pumping baffle further includes first pumping holes and second pumping holes on an upper surface of the pumping baffle, wherein the exhaust member has a first pumping hole on the bottom surface thereof so that a vacuum pressure of the pumping baffle is provided in the first side exhaust hole, And the reaction cell may include a second docking hole connected to the second pumping hole on the bottom surface so that a vacuum pressure of the pumping baffle is provided in the second side exhaust hole .

Further, the first side exhaust holes and the second side exhaust holes may be provided in the same line.

Further, the showerhead unit can inject the processing gas onto the substrate while rotating.

In addition, the reaction cell may further include a plurality of third exhaust holes formed on the same circumference surrounding the shower head unit.

The shower head unit may include: a shaft installed through the upper chamber; And an ejection portion connected to the shaft and having ejection holes for ejecting the process gas into the substrate.

The injection unit is connected to the shaft and has a first through hole formed at a center thereof to receive a process gas from a gas supply pipe installed in the shaft. A bottom plate disposed under the top plate and having a central flow path connected to the first through hole and slots formed radially at a center of the central flow path; And a plurality of injection holes formed on a bottom surface of the bottom plate and a plurality of connection holes formed on one side of the bottom plate and connected to an end of the central flow path to receive process gas, .

The shower head unit may further include: a rotation driving unit for rotating the shaft; And a lift driving unit for driving the shaft to move up and down.

In addition, the exhaust member may have a rod shape, and the first side exhaust holes may be formed on both sides facing the reaction space.

According to the embodiment of the present invention, since the exhaust gas is exhausted uniformly through the first side exhaust holes of the exhaust members and the second side exhaust holes of the reaction cell in multiple directions, gas congestion can be minimized and a uniform thin film can be secured It has a remarkable effect that can be achieved.

According to the embodiment of the present invention, it is possible to replace the middle plate according to the characteristics of the process gas.

According to the embodiments of the present invention, it is possible to adjust the distance between the substrate and the showerhead unit, thereby achieving a remarkable effect of securing a uniform thin film.

1 is a view for explaining a substrate processing apparatus according to the present invention.
2 is an exploded perspective view of the substrate processing apparatus shown in FIG.
3 is an enlarged view of the main part of Fig.
4 is a bottom view of the upper chamber.
5 is an exploded perspective view of the injection part.
6 is a view showing the gas flow in the upper chamber.

BRIEF DESCRIPTION OF THE DRAWINGS The present invention is capable of various modifications and various embodiments, and specific embodiments are illustrated in the drawings and will be described in detail in the detailed description. It is to be understood, however, that the invention is not to be limited to the specific embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout the specification and claims. The description will be omitted.

(Example)

1 is a view for explaining a substrate processing apparatus according to the present invention. Fig. 2 is an exploded perspective view of the substrate processing apparatus shown in Fig. 1, and Fig. 3 is an enlarged view of the main part of Fig.

Referring to FIGS. 1 to 3, a substrate processing apparatus 10 according to an embodiment of the present invention includes a process chamber 100, a substrate susceptor 200 as a support member, a pumping baffle 300, exhaust members 400, reaction cells 500, and a showerhead unit 600.

The process chamber 100 is composed of an upper chamber 120 and a lower chamber 110. The lower chamber 110 is provided with a substrate susceptor 200 on which the substrates are mounted. The lower chamber 110 has an upper surface opened, and the lower chamber 110 has an upper chamber 120 at a side wall edge. That is, the inner space of the process chamber 100 is sealed from the outside by coupling the upper chamber 120 and the lower chamber 110 together. The process chamber 100 is provided with an entrance (not shown) on one side. The entrance and exit of the substrates (W) are performed during the process.

The substrate susceptor 200 is installed in the inner space of the process chamber 100. The substrate susceptor 200 is of a layout type in which a plurality of substrates are placed. The stage 212 provided on the substrate susceptor 200 may have a circular shape similar to that of the substrate. For example, the substrate susceptor 200 is formed in a disc shape having six stages 212 on which the substrates W are placed. The stages 212 are arranged concentrically at 60 degrees around the center of the substrate susceptor 200. Although the substrate susceptor having six stages is illustrated and described in this embodiment, the number of stages of the substrate susceptor 200 may be less than six, or six or more.

Each stage 212 of the support member 200 may be provided with a heater 270 for heating the substrate W placed thereon. Heater) 270 heats the substrate to raise the temperature of the substrate W to a predetermined temperature (process temperature).

The substrate susceptor 200 may be rotated by a driving unit 290 connected to the rotating shaft 280. The driving unit 290 for rotating the substrate susceptor 200 preferably uses a stepping motor provided with an encoder capable of controlling the number of revolutions and the rotational speed of the driving motor.

Although not shown, the substrate susceptor 200 may be provided with a plurality of lift pins (not shown) for raising and lowering the substrate W in each stage. The lift pins ascend and descend the substrate W, thereby separating the substrate W from the stage of the substrate susceptor 200 or placing the substrate W on the stage.

The pumping baffle 300 is provided in a ring shape surrounding the edge of the substrate susceptor 200. The pumping baffle 300 receives the vacuum pressure through the exhaust pipe 310 and transfers the vacuum pressure to the exhaust members 400 and the reaction cells 500. To this end, the pumping baffle 300 has first pumping holes 302 and second pumping holes 304 on its upper surface.

4 is a bottom view of the upper chamber.

Referring to FIGS. 1 to 4, exhaust members 400 and reaction cells 500 are provided on the bottom surface of the upper chamber 120.

The exhaust members 400 are disposed radially from the center of the upper chamber 120 on the bottom surface of the upper chamber 120 facing the substrate susceptor 200. The exhaust members 400 are detachably installed on the bottom surface of the upper chamber. For example, the exhaust members 400 are arranged concentrically at an interval of 90 degrees around the center of the upper chamber 120, and the fan-shaped reaction cells 500- 1,500-2,500-3,500-4) are arranged. For example, the four reaction cells 500-1, 500-2, 500-3, and 500-4 may be provided integrally or separately on the bottom surface of the upper chamber.

The exhaust member 400 has a rod shape, first side exhaust holes 410 are provided on both sides along the longitudinal direction, and a first docking hole 420 is provided on the bottom end side. The first docking hole 420 and the first side exhaust holes 410 are connected through a flow path (not shown) formed therein. The first docking hole 420 is connected to the first pumping hole 302 of the pumping baffle 300. That is, the vacuum pressure provided to the pumping baffle is provided to the first side exhaust holes 410 through the first pumping hole 302 and the first docking hole 420.

The four reaction cells 500-1, 500-2, 500-3, and 500-4 provide reaction spaces partitioned by the exhaust members 400. The four reaction cells 500-1, 500-2, 500-3, Each having a disk shape, and each may be provided in a fan shape partitioned at intervals of 90 degrees.

Each of the reaction cells 500-1, 500-2, 500-3, and 500-4 is formed with second side exhaust holes 510 along the circumferential direction on the inner side of the arcuate portion 508 of the fan. The arc portion 508 of the reaction cell is stepped down vertically. The reaction space is provided in a fan shape by the arc portion 508 of the reaction cells 500-1, 500-2, 500-3, and 500-4 and the exhaust members 400. Here, the inner surface of the arc portion 508 means a side opposite to the reaction space. The reaction cells 500-1, 500-2, 500-3, and 500-4 are connected to the second pumping holes 304 on the bottom surface so that the vacuum pressure of the pumping baffle 300 is provided to the second side exhaust holes 510 2 docking hole 520 is provided. That is, the vacuum pressure provided to the pumping baffle 300 may be provided to the second side exhaust holes 510 through the second pumping hole 304 and the second docking hole 520.

Meanwhile, the first reaction cell 500-1 of the four reaction cells is provided with a showerhead unit 600 for injecting a first process gas corresponding to a precursor gas while rotating, and the third reaction cell 500-3 May be provided with a rod-shaped spray nozzle 700 for spraying a second process gas, which is a reactant gas. The first reaction cell 500-1 is provided with a mounting portion 580 for mounting the shower head unit 600 and a plurality of third exhaust holes 590 are formed on the same circumference surrounding the mounting portion 580. [ The third exhaust holes 590 are connected to the second docking hole 520 of the reaction cell 500-1.

For example, although the four reaction cells 500-1, 500-2, 500-3, and 500-4 have a fan shape at intervals of 90 degrees, the present invention is not limited thereto, Depending on the angle, it may be arranged at intervals of 45 degrees or at intervals of 180 degrees, and the size, shape and installation position of the reaction induction unit may be different depending on the type of the process chamber.

Referring to FIGS. 1 and 4, a center nozzle unit 800 is installed at the center of the upper chamber 120. The central nozzle unit 800 independently injects the purge gas supplied from the supply member (not shown) into the second reaction cell 500-2 and the fourth reaction cell 500-4, which are arranged opposite to each other. That is, the central nozzle unit 800 is formed at the side of the injection ports 810 for supplying the purge gas to the reaction cells 500-2 and 500-4.

For example, the ejection openings 810 of the central nozzle unit 800 may be configured in various shapes such as a horizontal slim shape or a multi-hole shape. In addition, the ejection openings 810 of the central nozzle unit 800 can be formed as a single layer or a multiple layer. In addition, the ejection openings 810 of the central nozzle unit 800 may have an inclined spray angle so as to eject gas in a radial direction. The third reaction cell 500-3 is illustrated as being supplied with the second process gas through the rod-shaped injection nozzle 700. However, if necessary, the rod-shaped injection nozzle may be omitted, and the central nozzle unit 800 may be provided And to supply the second process gas to the reaction space of the third reaction cell 500-3.

The showerhead unit 600 injects the process gas onto the substrate while rotating.

The shower head unit 600 may include a rotary ejection unit 650, a shaft 620, a rotation driving unit 630 for rotating the shaft 620, and a lift driving unit 640 for driving the shaft to move up and down. The jetting unit 650 can adjust the gap with the substrate by the elevating and lowering driving unit 640 and adjust the rotation speed by the rotation driving unit 630 to minimize the gas concentration deviation in the reaction space.

The shaft 620 is installed through the upper chamber 120. The jetting section 650 is connected to the shaft 620 and installed in the mounting section 580 of the first reaction cell 500-1.

5 is an exploded perspective view of the injection part.

2, 3 and 5, the jetting unit 650 includes a top plate 652, a bottom plate 656 and a middle plate 662. The top plate 652 has a circular plate shape And a first through hole 654 is formed in the center of the shaft 620 to receive a process gas from a gas supply pipe installed in the shaft 620. [

The bottom plate 656 is stacked below the top plate 652. The bottom plate 656 has a central flow passage 658 connected to the first through hole 654 and slots 660 formed radially at the central flow passage 658. The middle plate 662 is detachably attached to the slots 660 formed in the bottom plate 656. The middle plate 662 has a rod shape having a plurality of the injection holes 664 on the bottom surface thereof and connection grooves 666 connected to the ends of the central flow path 658 on one side thereof to receive the process gas.

Although not shown, the substrate processing apparatus may include a gas supply unit for supplying the corresponding gas to the shower head unit 600, the central nozzle unit 800, and the bar-shaped spray nozzle 700, respectively.

6 is a view showing the gas flow in the upper chamber.

In FIG. 6, the thin arrows show the gas supply and the thick arrows show the gas exhaust.

As shown in FIG. 6, in the showerhead unit 600 installed in the first reaction cell 500-1, the first process gas, which is a precursor gas, is injected. The gas byproducts subjected to the reaction in the reaction space are discharged through the first side exhaust holes 410 of the exhaust member 400 and the second side exhaust holes 510 of the reaction cell 500-1, The gas is uniformly exhausted in multiple directions through the gas flow paths 590, thereby minimizing the gas congestion. A purge gas is injected into the reaction space between the second and fourth reaction cells 500-2 and 500-4 through the central nozzle unit 800. And the gas exhaust in the reaction spaces of the second and fourth reaction cells 500-2 and 500-4 is connected to the first side exhaust holes 410 of the exhaust members 400 and the second side of the reaction cells 500-2 and 500-4, And exhausted uniformly in multiple directions through the exhaust holes 510. [ Likewise, the second process gas is supplied to the reaction space of the third reaction cell 500-3 through the rod-shaped injection nozzle 700. The exhaust in the reaction space of the third reaction cell 500-3 is also exhausted through the first side exhaust holes 410 of the exhaust members 400 and the second side exhaust holes 510 of the reaction cell 500-3 And are uniformly exhausted in multiple directions.

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

100: process chamber 200: substrate susceptor
300: Pumping baffle 400: Exhaust member
500; Reaction cell 600: Shower head unit

Claims (10)

A substrate processing apparatus comprising:
A process chamber having a lower chamber having an upper portion open and an upper chamber closing an open upper portion of the lower chamber;
A support member installed in the lower chamber and on which a plurality of substrates are placed on the same plane;
Exhausting members provided on a bottom surface of the upper chamber facing the support member and extending radially from the center of the upper chamber;
Fan shaped reaction cells provided on the bottom surface of the upper chamber and having reaction spaces partitioned by the exhaust members;
A showerhead unit installed in the reaction cell and supplying a process gas onto the substrate; And
A ring-shaped pumping baffle surrounding the edge of the support member and provided with vacuum pressure through the exhaust pipe;
Wherein the exhaust member includes first side exhaust holes formed in a side surface thereof and the reaction cell includes second side exhaust holes formed in a sector of a fan shape so as to discharge exhaust gas from the center of the reaction space in all directions Is formed,
The pumping baffle
And transmits the vacuum pressure to the exhaust member and the reaction cell. delete The method according to claim 1,
The pumping baffle
First pumping holes on the upper surface, and second pumping holes,
The exhaust member
And a first docking hole connected to the first pumping hole at a bottom surface so that a vacuum pressure of the pumping baffle is provided in the first side exhaust hole,
The reaction cell
And a second docking hole connected to the second pumping hole at a bottom surface so that a vacuum pressure of the pumping baffle is provided in the second side exhaust hole. The method according to claim 1,
Wherein the first side exhaust holes and the second side exhaust holes are provided in the same line. The method according to claim 1,
The shower head unit
And the processing gas is sprayed onto the substrate while rotating. The method according to claim 1,
The reaction cell
Further comprising a plurality of third exhaust holes formed on the same circumference surrounding the shower head unit. A substrate processing apparatus comprising:
A process chamber having a lower chamber having an upper portion open and an upper chamber closing an open upper portion of the lower chamber;
A support member installed in the lower chamber and on which a plurality of substrates are placed on the same plane;
Exhausting members provided on a bottom surface of the upper chamber facing the support member and extending radially from the center of the upper chamber;
Fan shaped reaction cells provided on the bottom surface of the upper chamber and having reaction spaces partitioned by the exhaust members; And
And a showerhead unit installed in the reaction cell and supplying a process gas onto the substrate;
Wherein the exhaust member includes first side exhaust holes formed in a side surface thereof and the reaction cell includes second side exhaust holes formed in a sector of a fan shape so as to discharge exhaust gas from the center of the reaction space in all directions Is formed,
The shower head unit
A shaft installed through the upper chamber;
And a jetting portion connected to the shaft and having jetting holes for jetting the process gas into the substrate,
The injector
A top plate connected to the shaft and having a first through hole for receiving a process gas from a gas supply pipe installed in the shaft;
A bottom plate disposed under the top plate and having a central flow path connected to the first through hole and slots formed radially at a center of the central flow path; And
And middle plates having a plurality of injection holes on a bottom surface and connection grooves connected to an end of the central flow path on one side thereof and provided with process grooves to be removably installed in the slots formed in the bottom plate And the substrate processing apparatus. delete 8. The method of claim 7,
The shower head unit
A rotation driving unit for rotating the shaft; And
Further comprising a lift driving part for moving the shaft up and down. The method according to claim 1,
The exhaust member
And the first side exhaust holes are formed on both sides of the reaction space opposite to each other.
KR1020140028475A 2014-03-11 2014-03-11 substrate processing apparatus KR101540718B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020140028475A KR101540718B1 (en) 2014-03-11 2014-03-11 substrate processing apparatus
PCT/KR2014/012594 WO2015137611A1 (en) 2014-03-11 2014-12-19 Substrate processing apparatus
TW104107725A TWI584392B (en) 2014-03-11 2015-03-11 Substrate processing apparatus

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Application Number Priority Date Filing Date Title
KR1020140028475A KR101540718B1 (en) 2014-03-11 2014-03-11 substrate processing apparatus

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TW (1) TWI584392B (en)
WO (1) WO2015137611A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019246038A1 (en) * 2018-06-18 2019-12-26 Applied Materials, Inc. Gas distribution assembly for improved pump-purge and precursor delivery
KR20200032312A (en) * 2018-09-18 2020-03-26 주식회사 테스 Gas supply unit
WO2020130355A1 (en) * 2018-12-20 2020-06-25 주식회사 테스 Substrate treatment apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102155281B1 (en) * 2017-07-28 2020-09-11 주성엔지니어링(주) Apparatus for Distributing Gas, and Apparatus and Method for Processing Substrate

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